Erasmus Langer
Siegfried Selberherr
Oskar Baumgartner
Hajdin Ceric
Johann Cervenka
Siddhartha Dhar
Robert Entner
Otmar Ertl
Wolfgang Gös
Klaus-Tibor Grasser
Philipp Hehenberger
René Heinzl
Clemens Heitzinger
Andreas Hössinger
Gerhard Karlowatz
Markus Karner
Hans Kosina
Ling Li
Gregor Meller
Goran Milovanovic
Mihail Nedjalkov
Alexandre Nentchev
Roberto Orio
Vassil Palankovski
Mahdi Pourfath
Philipp Schwaha
Viktor Sverdlov
Oliver Triebl
Stephan Enzo Ungersböck
Martin-Thomas Vasicek
Stanislav Vitanov
Martin Wagner
Paul-Jürgen Wagner
Thomas Windbacher
Robert Wittmann

Clemens Heitzinger
Dipl.-Ing. Dr.techn.
heitzinger(!at)iue.tuwien.ac.at
Biography:
Clemens Heitzinger was born in Linz, Austria, in 1974. After completing the compulsory military service, he received the degree of Diplomingenieur (with honors) in technical mathematics in 1999 and the doctoral degree in technical sciences (with honors) from the Technische Universität Wien, Austria, in 2002. In 2000 he joined the Institute for Microelectronics, Technische Universität Wien. From March to May 2001 he also held a position as visiting researcher at the Sony Technology Center, Hon-Atsugi, Tokyo, Japan. From October 2003 till August 2005 he worked as a visiting researcher at the Department of Mathematics, Arizona State University, and in August 2005 he joined the School of Electrical and Computer Engineering, Purdue University, as a research associate. Since January 2007 he has been working as an assistant at the Institute for Microelectronics, Technische Universität Wien, Austria. His scientific interests are applied mathematics for simulation in nanoelectronics and in nanobiotechnology. Dr. Heitzinger was awarded an Erwin Schrödinger Fellowship by the Austrian Science Fund (FWF) in 2003.

BioFETs

BioFETs (biologically sensitive FETs) are field-effect biosensors whose transducers consist of a semiconducting material. Their device structure is similar to that of a MOSFET, except that the gate structure is replaced by an aqueous solution that contains the analyte. As the analyte specifically binds to a biofunctionalized surface layer, the charge distribution and potential at the surface change, which in turn changes the conductance of the transducer. This minute conductance modulation thus enables label-free detection within minutes. Therefore this technology enables a vast array of applications and has the potential to revolutionize the biomedical field.
In recent years, experimental sensors based on conventional silicon structures and silicon nanowires have been published. Sensors for the detection of single-stranded DNA and for the detection of tumor markers have been built. Despite these recent successes, a theory to explain the functioning of the sensors and to understand the experiments in a quantitative manner is still lacking. This is mainly due to the complexity of the system, which requires a consistent analysis of the semiconductor, the surface chemistry, the biomolecules, and the transport mechanisms in the aqueous solution.
Therefore we have been developing a new model for BioFETs. Since the length scales of the biomolecules and the sensor area differ by at least 4 or 5 orders of magnitude, we developed a multi-scale model to link the interactions of the electric double layer and the biomolecules with the device simulation at large. The electric double layer at the silicon oxide surface is important for quantitative simulations since it is very effective at screening the charges of and around the analyte from the transducer. Our model also provides self-consistent simulations which are indispensable because of the interactions of the charge carriers in the semiconductor and the ions and biomolecules in the solution.


BioFET device structure.


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