Stressed silicon offers larger electron and hole mobilities. Stress causes a deviation of the silicon lattice constant from its equilibrium value, modifying the electronic band structure. Strained silicon material has emerged as a strong contender for developing transistors for next-generation electronics, because this material system offers superior transport properties. To enable the design of new device structures based on strained-Si, a reliable set of models for parameters such as mobility, energy bandgap, and relaxation times is required. The models describe the mobility tensor for electrons in strained-Si layers as a function of strain, and they include the effect of strain-induced splitting of the conduction band valleys in Si, intervalley scattering, and doping dependence. Monte Carlo simulations are needed in order to validate the model, and the results are fit to experimental data. The change of the electron effective mass cannot be neglected for general stress conditions, and the strain-induced splitting of the conduction bands can be used to optimize the electron mobility. The model includes the variation of the effective masses with stress as well as the effect of reduction of intervalley scattering due to valley splitting, and doping- and temperature-dependence.