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Publications Philipp Paul Hehenberger

25 records

Publications in Scientific Journals

5.   Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, Ph. J., Hehenberger, P. P., Grasser, T., Mitard, J., Eneman, G., Witters, L., Hoffmann, T. Y., Groeseneken, G. (2011).
On the Impact of the Si Passivation Layer Thickness on the NBTI of Nanoscaled Si0.45Ge0.55 pMOSFETs.
Microelectronic Engineering, 88(7), 1388–1391. https://doi.org/10.1016/j.mee.2011.03.065 (reposiTUm)

4.   Grasser, T., Kaczer, B., Gös, W., Reisinger, H., Aichinger, T., Hehenberger, P. P., Wagner, P.-J., Schanovsky, F., Franco, J., Toledano-Luque, M., Nelhiebel, M. (2011).
The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps.
IEEE Transactions on Electron Devices, 58(11), 3652–3666. https://doi.org/10.1109/ted.2011.2164543 (reposiTUm)

3.   Hehenberger, Ph., Wagner, P.-J., Reisinger, H., Grasser, T. (2009).
On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress.
Microelectronics Reliability, 49(9–11), 1013–1017. https://doi.org/10.1016/j.microrel.2009.06.040 (reposiTUm)

2.   Grasser, T., Kaczer, B., Gös, W., Aichinger, T., Hehenberger, P. P., Nelhiebel, M. (2009).
Understanding Negative Bias Temperature Instability in the Context of Hole Trapping.
Microelectronic Engineering, 86(7–9), 1876–1882. (reposiTUm)

1.   Grasser, T., Wagner, P.-Jü., Hehenberger, P., Goes, W., Kaczer, B. (2008).
A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability.
IEEE Transactions on Device and Materials Reliability, 8(3), 526–535. https://doi.org/10.1109/tdmr.2008.2002353 (reposiTUm)

Contributions to Books

1.   Goes, W., Schanovsky, F., Hehenberger, P., Wagner, P.-J., Grasser, T. (2010).
(Invited) Charge Trapping and the Negative Bias Temperature Instability.
In ECS Transactions (pp. 565–589). ECS Transactions. https://doi.org/10.1149/1.3481647 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

13.  T. Pumhössel, H. Ecker, P. Hehenberger, K. Zeman:
"Controlled modal energy transfer in torsional systems using impulsive parametric excitation";
Talk: 9th IFToMM International Conference on Rotor Dynamics, Mailand; 2014-09-22 - 2014-09-25; in: "Proceedings 9th IFToMM International Conference on Rotor Dynamics", (2014), Paper ID MIQ9Z4, 10 pages.

12.   Hehenberger, P., Goes, W., Baumgartner, O., Franco, J., Kaczer, B., Grasser, T. (2011).
Quantum-Mechanical Modeling of NBTI in High-K SiGe MOSFETs.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035036 (reposiTUm)

11.   Gös, W., Schanovsky, F., Hehenberger, P., Wagner, P., Grasser, T. (2010).
Charge Trapping and the Negative Bias Temperature Instability.
In Meet. Abstr. - Electrochem. Soc. 2010 (p. 565), Las Vegas, USA. (reposiTUm)

10.   Grasser, T., Kaczer, B., Goes, W., Reisinger, H., Aichinger, T., Hehenberger, P., Wagner, P., Schanovsky, F., Franco, J., Roussel, P., Nelhiebel, M. (2010).
Recent Advances in Understanding the Bias Temperature Instability.
In 2010 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2010.5703295 (reposiTUm)

9.   Hehenberger, P., Reisinger, H., Grasser, T. (2010).
Recovery of Negative and Positive Bias Temperature Stress in pMOSFETs.
In 2010 IEEE International Integrated Reliability Workshop Final Report, California. https://doi.org/10.1109/iirw.2010.5706473 (reposiTUm)

8.   Grasser, T., Kaczer, B., Gös, W., Aichinger, T., Hehenberger, P., Nelhiebel, M. (2009).
A Two-Stage Model for Negative Bias Temperature Instability.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 33–44), Phoenix. (reposiTUm)

7.   Hehenberger, P., Wagner, P., Reisinger, H., Grasser, T. (2009).
Comparison of Fast Measurement Methods for Short-Term Negative Bias Temperature Stress and Relaxation.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 311–314), Montreux, Austria. (reposiTUm)

6.   Hehenberger, P., Aichinger, T., Grasser, T., Gös, W., Triebl, O., Kaczer, B., Nelhiebel, M. (2009).
Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement Technique.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 1033–1038), Phoenix. (reposiTUm)

5.   Hehenberger, P., Wagner, P., Reisinger, H., Grasser, T. (2009).
On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress.
In Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (p. 4), Maastricht. (reposiTUm)

4.   Grasser, T., Reisinger, H., Goes, W., Aichinger, T., Hehenberger, P., Wagner, P., Nelhiebel, M., Franco, J., Kaczer, B. (2009).
Switching Oxide Traps as the Missing Link Between Negative Bias Temperature Instability and Random Telegraph Noise.
In 2009 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2009.5424235 (reposiTUm)

3.   Goes, W., Karner, M., Tyaginov, S., Hehenberger, P., Grasser, T. (2008).
Level Shifts and Gate Interfaces as Vital Ingredients in Modeling of Charge Trapping.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648239 (reposiTUm)

2.   Grasser, T., Wagner, P., Hehenberger, P., Gös, W., Kaczer, B. (2007).
A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 6–11), S. Lake Tahoe. (reposiTUm)

1.   Grasser, T., Kaczer, B., Hehenberger, P., Gös, W., Connor, R., Reisinger, H., Gustin, W., Schlünder, C. (2007).
Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability.
In 2007 IEEE International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2007.4419069 (reposiTUm)

Talks and Poster Presentations (without Proceedings-Entry)

2.   Hehenberger, P. (2006).
Hot Carrier Stability of Trench Power MOSFETs Under Avalanche Conditions.
Fachvortrag, Infineon Technologies Austria AG, Villach, Austria. (reposiTUm)

1.   Sieberer, M., Michor, H., Della Mea, M., Hehenberger, P., HofstŠtter, C., Lackner, R., Bauer, E., Hilscher, G., Grytsiv, A., Rogl, P. F. (2004).
The Effect of Doping Upon Superconductivity in La₃Ni₂B₂N₃.
19. Workshop on strongly correlated systems and superconductivity, Planneralm, Austria. (reposiTUm)

Doctor's Theses (authored and supervised)

Diploma and Master Theses (authored and supervised)

1.  P. Hehenberger:
"Hot Carrier Stability of Trench Power MOSFETs under Avalanche Conditions";
Supervisor: M. Gröschl; Institut für Allgemeine Physik, 2006; final examination: 2006-11-13.

Scientific Reports

2.   Ceric, H., Hehenberger, P. P., Milovanovic, G., Sverdlov, V., Vasicek, M., Selberherr, S. (2009).
VISTA Status Report June 2009.
(reposiTUm)

1.   Grasser, T., Gös, W., Triebl, O., Hehenberger, P. P., Wagner, P.-J., Schwaha, P., Heinzl, R., Holzer, S., Entner, R., Wagner, S., Schanovsky, F. (2007).
3 Year Report 2005-2007.
(reposiTUm)