Publications P. Hehenberger
25 records
| 5. | J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, Ph. Hehenberger, T. Grasser, J. Mitard, G. Eneman, T. Y. Hoffmann, G. Groeseneken: "On the Impact of the Si Passivation Layer Thickness on the NBTI of Nanoscaled Si0.45Ge0.55 pMOSFETs"; Microelectronic Engineering, 88, (2011), 1388 - 1391 doi:10.1016/j.mee.2011.03.065. BibTeX |
| 4. | T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, M. Toledano-Luque, M. Nelhiebel: "The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps"; IEEE Transactions on Electron Devices, 58, (invited) (2011), 3652 - 3666. BibTeX |
| 3. | T. Grasser, B. Kaczer, W. Gös, T. Aichinger, Ph. Hehenberger, M. Nelhiebel: "Understanding Negative Bias Temperature Instability in the Context of Hole Trapping"; Microelectronic Engineering, 86, (invited) (2009), 1876 - 1882. BibTeX |
| 2. | Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser: "On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress"; Microelectronics Reliability, 49, (2009), 1013 - 1017 doi:10.1016/j.microrel.2009.06.040. BibTeX |
| 1. | T. Grasser, P.-J. Wagner, Ph. Hehenberger, W. Gös, B. Kaczer: "A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability"; IEEE Transactions on Device and Materials Reliability, 8, (2008), 526 - 535 doi:10.1109/TDMR.2008.2002353. BibTeX |
| 1. | W. Gös, F. Schanovsky, Ph. Hehenberger, P.-J. Wagner, T. Grasser: "Charge Trapping and the Negative Bias Temperature Instability"; in "Physics and Technology of High-k Materials 8", ECS Transactions, (invited) 2010, ISBN: 978-1-56677-822-0, 565 - 589 doi:10.1149/1.3481647. BibTeX |
| 13. | T. Pumhössel, H. Ecker, P. Hehenberger, K. Zeman: "Controlled modal energy transfer in torsional systems using impulsive parametric excitation"; Talk: 9th IFToMM International Conference on Rotor Dynamics, Mailand; 2014-09-22 - 2014-09-25; in "Proceedings 9th IFToMM International Conference on Rotor Dynamics", (2014), 10 page(s) . BibTeX |
| 12. | Ph. Hehenberger, W. Gös, O. Baumgartner, J. Franco, B. Kaczer, T. Grasser: "Quantum-Mechanical Modeling of NBTI in High-k SiGe MOSFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 11 - 14 doi:10.1109/SISPAD.2011.6035036. BibTeX |
| 11. | T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, Ph. J. Roussel, M. Nelhiebel: "Recent Advances in Understanding the Bias Temperature Instability"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; (invited) 2010-12-06 - 2010-12-08; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2010), 82 - 85 doi:10.1109/IEDM.2010.5703295. BibTeX |
| 10. | Ph. Hehenberger, H. Reisinger, T. Grasser: "Recovery of Negative and Positive Bias Temperature Stress in pMOSFETs"; Talk: IEEE International Integrated Reliability Workshop, California; 2010-10-17 - 2010-10-21; in "Final Report of IEEE International Integrated Reliability Workshop", (2010), 8 - 11 doi:10.1109/IIRW.2010.5706473. BibTeX |
| 9. | W. Gös, F. Schanovsky, Ph. Hehenberger, P.-J. Wagner, T. Grasser: "Charge Trapping and the Negative Bias Temperature Instability"; Talk: 218th ECS Meeting, Las Vegas, USA; 2010-10-10 - 2010-10-15; in "Meet. Abstr. - Electrochem. Soc. 2010", (2010), ISBN: 978-1-56677-822-0, 565 page(s) . BibTeX |
| 8. | T. Grasser, H. Reisinger, W. Gös, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, M. Nelhiebel, J. Franco, B. Kaczer: "Switching Oxide Traps as the Missing Link Between Negative Bias Temperature Instability and Random Telegraph Noise"; Talk: IEEE International Electron Devices Meeting (IEDM), Baltimore, MD, USA; 2009-12-07 - 2009-12-09; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2009), 1 - 4 doi:10.1109/IEDM.2009.5424235. BibTeX |
| 7. | Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser: "On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 2009-10-05 - 2009-10-09; in "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009), 4 page(s) . BibTeX |
| 6. | Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser: "Comparison of Fast Measurement Methods for Short-Term Negative Bias Temperature Stress and Relaxation"; Talk: European Solid-State Device Research Conference (ESSDERC), Athens; 2009-09-14 - 2009-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2009), ISBN: 978-1-4244-4351-2, 311 - 314. BibTeX |
| 5. | T. Grasser, B. Kaczer, W. Gös, T. Aichinger, Ph. Hehenberger, M. Nelhiebel: "A Two-Stage Model for Negative Bias Temperature Instability"; Talk: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 33 - 44. BibTeX |
| 4. | Ph. Hehenberger, T. Aichinger, T. Grasser, W. Gös, O. Triebl, B. Kaczer, M. Nelhiebel: "Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement Technique"; Poster: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 1033 - 1038. BibTeX |
| 3. | W. Gös, M. Karner, S. E. Tyaginov, Ph. Hehenberger, T. Grasser: "Level Shifts and Gate Interfaces as Vital Ingredients in Modeling of Charge Trapping"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 69 - 72 doi:10.1109/SISPAD.2008.4648239. BibTeX |
| 2. | T. Grasser, B. Kaczer, Ph. Hehenberger, W. Gös, R. Connor, H. Reisinger, W. Gustin, C. Schlünder: "Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 2007-12-10 - 2007-12-12; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2007), ISBN: 1-4244-1508-x, 801 - 804 doi:10.1109/IEDM.2007.4419069. BibTeX |
| 1. | T. Grasser, P.-J. Wagner, Ph. Hehenberger, W. Gös, B. Kaczer: "A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability"; Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 2007-10-15 - 2007-10-18; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2007), ISBN: 1-4244-1171-8, 6 - 11. BibTeX |
| 2. | P. Hehenberger: "Hot Carrier Stability of Trench Power MOSFETs under Avalanche Conditions"; Talk: Fachvortrag, Infineon Technologies Austria AG, Villach; 2006-07-13. BibTeX |
| 1. | M. Sieberer, H. Michor, M. Della Mea, P. Hehenberger, C. Hofstätter, R. Lackner, E. Bauer, G. Hilscher, A. Grytsiv, P. Rogl: "The effect of doping upon superconductivity in La3Ni2B2N3"; Poster: 19. Workshop on strongly correlated systems and superconductivity, Planneralm, Österreich; 2004-02-22 - 2004-02-28; . BibTeX |
| 1. | Ph. Hehenberger: "Advanced Characterization of the Bias Temperature Instability"; Reviewer: T. Grasser, M. Gröschl; Institut für Mikroelektronik, 2011, oral examination: 2011-12-14. BibTeX |
| 1. | P. Hehenberger: "Hot Carrier Stability of Trench Power MOSFETs under Avalanche Conditions"; Supervisor: M. Gröschl; Institut für Allgemeine Physik, 2006, final examination: 2006-11-13. BibTeX |
| 2. | H. Ceric, Ph. Hehenberger, G. Milovanovic, V. Sverdlov, M. Vasicek, S. Selberherr: "VISTA Status Report I"; (2009), 30 page(s) . BibTeX |
| 1. | T. Grasser, W. Gös, O. Triebl, Ph. Hehenberger, P.-J. Wagner, P. Schwaha, R. Heinzl, S. Holzer, R. Entner, S. Wagner, F. Schanovsky: "3 Year Report 2005-2007"; (2007), 34 page(s) . BibTeX |