Publications Wolfhard Zisser
25 records
| 3. | S. Papaleo, W. H. Zisser, A.P. Singulani, H. Ceric, S. Selberherr: "Stress Evolution During Nanoindentation in Open TSVs"; IEEE Transactions on Device and Materials Reliability, 16, (2016), 470 - 474 doi:10.1109/TDMR.2016.2622727. BibTeX |
| 2. | H. Ceric, R. Orio, W. H. Zisser, S. Selberherr: "Microstructural Impact on Electromigration: A TCAD Study"; Facta universitatis - series: Electronics and Energetics, 27, (2014), 1 - 11 doi:10.2298/FUEE1401001C. BibTeX |
| 1. | W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr: "Electromigration Reliability of Open TSV Structures"; Microelectronics Reliability, 54, (2014), 2133 - 2137 doi:10.1016/j.microrel.2014.07.099. BibTeX |
| 19. | L. Filipovic, R.L. de Orio, W. H. Zisser, S. Selberherr: "Modeling Electromigration in Nanoscaled Copper Interconnects"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 2017-09-07 - 2017-09-09; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2017), ISBN: 978-4-86348-612-6, 161 - 164 doi:10.23919/SISPAD.2017.8085289. BibTeX |
| 18. | S. Papaleo, W. H. Zisser, H. Ceric: "Factors that Influence Delamination at the Bottom of Open TSVs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 421 - 424 doi:10.1109/SISPAD.2015.7292350. BibTeX |
| 17. | S. Papaleo, W. H. Zisser, H. Ceric: "Effects of the Initial Stress at the Bottom of Open TSVs"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu, Taiwan; 2015-06-29 - 2015-07-02; in "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2015), . BibTeX |
| 16. | M. Rovitto, W. H. Zisser, H. Ceric: "Analysis of Electromigration Void Nucleation Failure Time in Open Copper TSVs"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu, Taiwan; 2015-06-29 - 2015-07-02; in "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2015), . BibTeX |
| 15. | M. Rovitto, W. H. Zisser, H. Ceric, T. Grasser: "Electromigration Modelling of Void Nucleation in Open Cu-TSVs"; Poster: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Budapest, Hungary; 2015-04-19 - 2015-04-22; in "Proceedings of the International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)", (2015), ISBN: 978-1-4799-9949-1, 5 page(s) doi:10.1109/EuroSimE.2015.7103100. BibTeX |
| 14. | H. Ceric, W. H. Zisser, S. Selberherr: "Quantum Mechanical Calculations of Electromigration Characteristics"; Talk: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; (invited) 2014-10-15 - 2014-10-17; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 21. BibTeX |
| 13. | S. Papaleo, W. H. Zisser, A. P. Singulani, H. Ceric, S. Selberherr: "Stress Evolution During the Nanoindentation in Open TSVs"; Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 2014-10-15 - 2014-10-17; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 52. BibTeX |
| 12. | W. H. Zisser, H. Ceric, S. Selberherr: "Void Evolution in Open TSVs"; Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 2014-10-15 - 2014-10-17; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 59. BibTeX |
| 11. | W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr: "Electromigration Reliability of Open TSV Structures"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 2014-09-29 - 2014-10-02; in "Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), 48. BibTeX |
| 10. | H. Ceric, W. H. Zisser, M. Rovitto, S. Selberherr: "Electromigration in Solder Bumps: A Mean-Time-to-Failure TCAD Study"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 221 - 224 doi:10.1109/SISPAD.2014.6931603. BibTeX |
| 9. | W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr: "Electromigration Induced Resistance Increase in Open TSVs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 249 - 252 doi:10.1109/SISPAD.2014.6931610. BibTeX |
| 8. | S. Papaleo, W. H. Zisser, A. P. Singulani, H. Ceric, S. Selberherr: "Stress Analysis in Open TSVs after Nanoindentation"; Talk: GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects, Thun, Switzerland; 2014-09-04 - 2014-09-05; in "Abstracts", (2014), 39 - 40. BibTeX |
| 7. | W. H. Zisser, H. Ceric, S. Selberherr: "Stress Development and Void Evolution in Open TSVs"; Talk: GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects, Thun, Switzerland; 2014-09-04 - 2014-09-05; in "Abstracts", (2014), 38 - 39. BibTeX |
| 6. | W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr: "Electromigration Reliability of Open TSV Structures"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 2014-06-30 - 2014-07-04; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2, 317 - 320 doi:10.1109/IPFA.2014.6898179. BibTeX |
| 5. | W. H. Zisser, H. Ceric, R. Orio, S. Selberherr: "Electromigration Induced Stress in Open TSVs"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 142 - 145 doi:10.1109/IIRW.2013.6804179. BibTeX |
| 4. | W. H. Zisser, H. Ceric, R. Orio, S. Selberherr: "Electromigration Analyses of Open TSVs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 244 - 247 doi:10.1109/SISPAD.2013.6650620. BibTeX |
| 3. | H. Ceric, R. Orio, W. H. Zisser, S. Selberherr: "Ab Initio Method for Electromigration Analysis"; Talk: IEEE Electronics Packaging Technology Conference (EPTC), Singapore; 2012-07-02 - 2012-07-06; in "Proceedings of the 19th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0982-0, 4 page(s) doi:10.1109/IPFA.2012.6306306. BibTeX |
| 2. | H. Ceric, R. Orio, W. H. Zisser, V. Schnitzer, S. Selberherr: "Modeling of Microstructural Effects on Electromigration Failure"; Talk: International Workshop on Stress-Induced Phenomena in Microelectronics, Kyoto, Japan; (invited) 2012-05-28 - 2012-05-30; in "Abstracts of 12th International Workshop on Stress-Induced Phenomena in Microelectronics", (2012), 50 - 51. BibTeX |
| 1. | H. Ceric, R. Orio, F. Schanovsky, W. H. Zisser, S. Selberherr: "Multilevel Simulation for the Investigation of Fast Diffusivity Paths"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 135 - 138 doi:10.1109/SISPAD.2011.6035068. BibTeX |
| 1. | B. Ullmann, A. Grill, P. Manstetten, M. Jech, M. Kampl, W. H. Zisser, L. Filipovic, M. Thesberg, F. Rudolf, T. Windbacher, J. Cervenka, M. Katterbauer, J. Weinbub: "Ihr Smartphone - ein Supercomputer vor 20 Jahren. Ein Einblick in die Mikro- und Nanoelektronik"; Talk: Lange Nacht der Forschung 2016, Wien; 2016-04-22. BibTeX |
| 1. | W. H. Zisser: "Electromigration in Interconnect Structures"; Reviewer: S. Selberherr, M. Kaltenbacher; Institut für Mikroelektronik, 2016, oral examination: 2016-06-21 doi:10.34726/hss.2016.37905. BibTeX |
| 1. | W. H. Zisser: "Untersuchung an Kupferkristallen unter Zuhilfenahme von MD Simulationen"; Supervisor: E. Langer, H. Ceric; Institut für Mikroelektronik, 2011, final examination: 2011-10-12. BibTeX |