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Previous: 8.4 Step Height Distribution Function Top: 7 Modeling of Bias Temperature Instabilities Next: 9 Experimental Setup

So far the trapping kinetics of single defects in nanoscale devices have been described by their capture/emission time characteristics. Now this approach will be extended to large-area devices. Therefore, the capture/emission time distribution function , which gives the number of defects contributing to within the interval and , is introduced. Therefrom the threshold voltage shift can be calculated via [89]

Hence defects contributing to have been charged until and are not discharged after . Furthermore, by reformulating (8.11) to

the capture emission time (CET) map can be directly calculated from a set of experimental recovery traces recorded for different stress times, see Figure 8.20.

Equation (8.12) is used in Chapter 12 to compare simulated CET maps with CET maps directly calculated from measurements. As will be shown, the simulations reproduce the characteristics of the experimental CET map, confirming the accuracy of this approach.

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