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Publications Dmitry Osintsev

94 records

Publications in Scientific Journals

12.  J. Ghosh, D. Osintsev, V. Sverdlov:
"Efficient Two-Level Parallelization Approach to Evaluate Spin Relaxation in a Strained Thin Silicon fFilm";
Journal of Computational Electronics, 18 (2019), 1; 28 - 36. https://doi.org/10.1007/s10825-018-1274-x

11.  J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress";
Journal of Nano Research, 39 (2016), 34 - 42. https://doi.org/10.4028/www.scientific.net/JNanoR.39.34

10.  D. Osintsev, V. Sverdlov, S. Selberherr:
"Electron Mobility and Spin Lifetime Enhancement in Strained Ultra-Thin Silicon Films";
Solid-State Electronics, 112 (2015), 46 - 50. https://doi.org/10.1016/j.sse.2015.02.007

9.  J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures";
Microelectronic Engineering, 147 (2015), 89 - 91. https://doi.org/10.1016/j.mee.2015.04.072

8.  D. Osintsev, V. Sverdlov, S. Selberherr:
"Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films";
Advanced Materials Research - Print/CD, 854 (2014), 29 - 34. https://doi.org/10.4028/www.scientific.net/AMR.854.29

7.  M. Bina, S. E. Tyaginov, J. Franco, K. Rupp, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser:
"Predictive Hot-Carrier Modeling of n-Channel MOSFETs";
IEEE Transactions on Electron Devices, 61 (2014), 9; 3103 - 3110. https://doi.org/10.1109/TED.2014.2340575

6.  D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors";
Sains Malaysiana, 42 (2013), 2; 205 - 211.

5.  T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Simulation Study of an Electrically Read- and Writable Magnetic Logic Gate";
Microelectronic Engineering, 112 (2013), 188 - 192. https://doi.org/10.1016/j.mee.2012.12.030

4.  D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Subband Splitting and Surface Roughness Induced Spin Relaxation in (001) Silicon SOI MOSFETs";
Solid-State Electronics, 90 (2013), 34 - 38. https://doi.org/10.1016/j.sse.2013.02.055

3.  A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling";
IEEE Transactions on Magnetics, 48 (2012), 4; 1289 - 1292. https://doi.org/10.1109/TMAG.2011.2173565

2.  D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
"Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built with InAs and Si Channels";
Solid-State Electronics, 71 (2012), 25 - 29. https://doi.org/10.1016/j.sse.2011.10.015

1.  A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Reduction of Switching Time in Pentalayer Magnetic Tunnel Junctions with a Composite-Free Layer";
Physica Status Solidi - Rapid Research Letters, 5 (2011), 12; 420 - 422. https://doi.org/10.1002/pssr.201105376

Contributions to Books

12.  J. Ghosh, D. Osintsev, V. Sverdlov, S. Ganguly:
"Multilevel Parallelization Approach to Estimate Spin Lifetime in Silicon: Performance Analysis";
in: "Proceedings of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", F. Gamiz, V. Sverdlov, C. Sampedro, L. Donetti (ed.); IEEE, 2018, ISBN: 978-1-5386-4812-4, 205 - 208. https://doi.org/10.1109/ULIS.2018.8354770

11.  D. Osintsev, V. Sverdlov, S. Selberherr:
"Electron Momentum and Spin Relaxation in Silicon Films";
in: "Progress in Industrial Mathematics at ECMI 2014, Mathematics in Industry", 22; G. Russo, V. Capasso, G. Nicosia, V. Romano (ed.); Springer International Publishing, 2016, (invited), ISBN: 978-3-319-23412-0, 695 - 700. https://doi.org/10.1007/978-3-319-23413-7_96

10.  V. Sverdlov, D. Osintsev, S. Selberherr:
"Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation";
in: "Nano Devices and Sensors", J. Liou, S.-K. Liaw, Y.-H. Chung (ed.); De Gruyter, 2016, (invited), ISBN: 978-1-5015-1050-2, 29 - 48. https://doi.org/10.1515/9781501501531-003

9.  J. Ghosh, D. Osintsev, V. Sverdlov, J. Weinbub, S. Selberherr:
"Evaluation of Spin Lifetime in Thin-Body FETs: A High Performance Computing Approach";
in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 9374; I. Lirkov, S. Margenov, J. Wasniewski (ed.); Springer International Publishing, 2015, ISBN: 978-3-319-26519-3, 285 - 292. https://doi.org/10.1007/978-3-319-26520-9_31

8.  J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films";
in: "Advanced CMOS-Compatible Semiconductor Devices 17, Vol.66, No.5", Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (ed.); issued by: The Electrochemical Society; ECS Transactions, 2015, ISBN: 978-1-62332-238-0, 233 - 240. https://doi.org/10.1149/06605.0233ecst

7.  V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
"Modeling Silicon Spintronics";
in: "Recent Advances in Mathematical Methods in Applied Sciences", Y. Senichenkov, V. Korablev, I. Chernorytski, N. Korovkin, S. Pozdnjkov, K. Ntalianis (ed.); Mathematics and Computers in Science and Engineering Series | 32, 2014, ISBN: 978-1-61804-251-4, 195 - 198.

6.  D. Osintsev, V. Sverdlov, S. Selberherr:
"Uniaxial Shear Strain as a Mechanism to Increase Spin Lifetime in Thin Film of a SOI-based Silicon Spin FETs";
in: "Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting", A. Nazarov, B. Francis, K. Valeriya, D. Flandre (ed.); Springer International Publishing, 2014, ISBN: 978-3-319-08803-7, 127 - 149. https://doi.org/10.1007/978-3-319-08804-4_7

5.  D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
"Valley Splitting and Spin Lifetime Enhancement in in Strained Thin Silicon Films";
in: "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 4. https://doi.org/10.1109/IWCE.2014.6865824

4.  D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Enhancement by Shear Strain in Thin Silicon-on-Insulator Films";
in: "Advanced Semiconductor-on-Insulator Technology and Related Physics 16, Vol. 53, No. 5", Y. Omura, F. Gamiz, B.-Y. Nguyen, H. Ishii, J. A. Martino, S. Selberherr, J.-P. Raskin (ed.); issued by: The Electrochemical Society; ECS Transactions, 2013, ISBN: 978-1-62332-027-0, 203 - 208. https://doi.org/10.1149/05305.0203ecst

3.  D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins";
in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 7116; I. Lirkov, S. Margenov, J. Wasniewski (ed.); Springer Berlin Heidelberg, 2012, ISBN: 978-3-642-29842-4, 630 - 637. https://doi.org/10.1007/978-3-642-29843-1_72

2.  D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Reduction of Surface Roughness Induced Spin Relaxation in SOI MOSFETs";
in: "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4. https://doi.org/10.1109/IWCE.2012.6242850

1.  D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, J. Weinbub, S. Selberherr:
"Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors";
in: "Advanced Semiconductor-on-Insulator Technology and Related Physics 15, Vol.35, No.5", Y. Omura, H. Ishii, B.-Y. Nguyen, S. Selberherr, F. Gamiz, J. A. Martino, J.-P. Raskin (ed.); issued by: The Electrochemical Society; ECS Transactions, 2011, ISBN: 978-1-56677-866-4, 277 - 282. https://doi.org/10.1149/1.3570806

Talks and Poster Presentations (with Proceedings-Entry)

68.  J. Ghosh, D. Osintsev, V. Sverdlov, S. Ganguly:
"Multilevel Parallelization Approach to Estimate Spin Lifetime in Silicon: Performance Analysis";
Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 2018-03-19 - 2018-03-21; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0; 79 - 80.

67.  J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Dependence of Spin Lifetime on Spin Injection Orientation in Strained Silicon Films";
Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in: "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE, (2015), ISBN: 978-1-4799-6910-4; 285 - 288. https://doi.org/10.1109/ULIS.2015.7063829

66.  V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
"Electron Spin Lifetime Enhancement by Shear Strain in Thin Silicon Films";
Talk: CMOS Emerging Technologies Research (CMOSETR), Vancouver, BC, Canada (invited); 2015-05-20 - 2015-05-22; in: "Book of Abstracts of the 2015 CMOS Emerging Technologies Research Symposium (CMOSETR)", Google Books, (2015), ISBN: 978-1-927500-70-5; 58.

65.  J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Evaluation of Spin Lifetime in Thin Silicon Films by Multilevel Parallelization";
Poster: nanoHUB User Conference, West Lafayette, Indiana, USA; 2015-08-31 - 2015-09-01; in: "Proceedings of the nanoHUB User Conference", (2015), 1.

64.  J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Increase of Surface Roughness and Phonon Scattering Mediated Spin Lifetime in Thin Strained SOI Film";
Talk: European Materials Research Society (EMRS), Warsaw, Poland; 2015-09-15 - 2015-09-18; in: "Book of Abstracts of the 2015 E-MRS Fall Meeting", (2015), 1 pages.

63.  J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Injection Direction Sensitive Spin Lifetime Model in a Strained Thin Silicon Film";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1; 277 - 280. https://doi.org/10.1109/SISPAD.2015.7292313

62.  J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures";
Talk: International Conference on Insulating Films on Semiconductors (INFOS), Udine, Italy; 2015-06-29 - 2015-07-02; in: "Book of Abstracts 19th Conference on Insulating Films on Semiconductors", (2015), ISBN: 978-88-9030-695-2; 235 - 236.

61.  J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Dependence on Spin Injection Orientation in Strained Silicon Films";
Talk: APS March Meeting, San Antonio, USA; 2015-03-02 - 2015-03-06; in: "Bulletin of the American Physical Society (APS March Meeting)", 60/1 (2015).

60.  J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 2015-09-02 - 2015-09-04; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0; 35 - 36.

59.  D. Osintsev, J. Ghosh, V. Sverdlov, J. Weinbub, S. Selberherr:
"Spin Lifetime in MOSFETs: A High Performance Computing Approach";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2015-06-08 - 2015-06-12; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 60 - 61.

58.  V. Sverdlov, D. Osintsev, J. Ghosh, S. Selberherr:
"Strained Silicon-on-Insulator for Spintronic Applications: Giant Spin Lifetime Enhancement";
Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 2015-06-21 - 2015-06-26; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), 63.

57.  J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films";
Talk: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 2015-05-24 - 2015-05-28; in: "Proceedings of the 227th ECS Meeting (ECS)", ECS Transactions, 67 (2015), ISSN: 1938-6737; 2 pages.

56.  S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser:
"A Predictive Physical Model for Hot-Carrier Degradation in Ultra-Scaled MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; 89 - 92. https://doi.org/10.1109/SISPAD.2014.6931570

55.  V. Sverdlov, D. Osintsev, S. Selberherr:
"Electron Momentum and Spin Relaxation in Silicon Films: A Rigorous k p-based Approach";
Talk: European Conference on Mathematics for Industry (ECMI), Taormina, Italy (invited); 2014-06-09 - 2014-06-14; in: "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), 454 - 456.

54.  T. Windbacher, D. Osintsev, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator";
Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; 193 - 194.

53.  D. Osintsev, V. Sverdlov, S. Selberherr:
"Increasing Mobility and Spin Lifetime with Shear Strain in Thin Silicon Films";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 2014-01-27 - 2014-01-29; in: "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2.

52.  D. Osintsev, V. Sverdlov, S. Selberherr:
"Mobility and Spin Lifetime Enhancement in Thin Silicon Films by Shear Strain";
Talk: APS March Meeting, Denver, USA; 2014-03-03 - 2014-03-07; in: "Bulletin of the American Physical Society (APS March Meeting)", 59/1 (2014), 1 pages.

51.  V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
"Modeling Silicon Spintronics";
Talk: International Conference on Mathematical Models and Methods in Applied Sciences (MMMAS), Saint-Petersburg, Russia (invited); 2014-09-23 - 2014-09-25; in: "Abstracts 2014", (2014), 78.

50.  A. Makarov, D. Osintsev, V. Sverdlov, S. Selberherr:
"Modeling Spin-Based Electronic Devices";
Talk: Nano and Giga Challenges in Microelectronics (NGCM), Phoenix, USA (invited); 2014-03-10 - 2014-03-14; in: "Book of Abstracts", (2014), 1 pages.

49.  V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, S. Selberherr:
"Modeling of Spin-Based Silicon Technology";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden (invited); 2014-04-07 - 2014-04-09; in: "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9; 1 - 4. https://doi.org/10.1109/ULIS.2014.6813891

48.  S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, O. Triebl, B. Kaczer, T. Grasser:
"Physical Modeling of Hot-Carrier Degradation for Short- and Long-channel MOSFETs";
Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; XT16.1 - XT16.8.

47.  V. Sverdlov, D. Osintsev, S. Selberherr:
"Spin Behaviour in Strained Silicon Films";
Talk: European Material Research Society (E-MRS) Fall Meeting, Warsaw, Poland (invited); 2014-09-15 - 2014-09-18; in: "Abstracts of E-MRS Fall Meeting", (2014), 1 pages.

46.  D. Osintsev, V. Sverdlov, S. Selberherr:
"Valley Degeneracy and Spin Lifetime Enhancement in Stressed Silicon Films";
Poster: 8th International Conference on Physics and Applications of Spin Phenomena in Solids (PASPS VIII), Washington, D.C., USA; 2014-07-28 - 2014-07-31; in: "Book of Abstracts", (2014), 1.

45.  D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
"Valley Splitting and Spin Lifetime Enhancement in Strained Silicon Heterostructures";
Poster: International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 2014-02-23 - 2014-02-28; in: "Proceedings of International Winterschool on New Developments in Solid State Physics", (2014), 88 - 89.

44.  D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
"Valley Splitting and Spin Lifetime Enhancement in Ultra-Scaled MOSFETs";
Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; 59 - 60.

43.  D. Osintsev, V. Sverdlov, S. Selberherr:
"Calculation of the Electron Mobility and Spin Lifetime Enhancement by Strain in Thin Silicon Films";
Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 2013-06-24 - 2013-06-28; in: "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6; 69 - 70.

42.  D. Osintsev, V. Sverdlov, S. Selberherr:
"Enhanced Intervalley Splitting and Reduced Spin Relaxation in Strained Thin Silicon Films";
Talk: APS March Meeting, Baltimore, Maryland, USA; 2013-03-18 - 2013-03-22; in: "Bulletin American Physical Society (APS March Meeting)", (2013), 1 pages.

41.  S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, Y. Wimmer, B. Kaczer, T. Grasser:
"Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETs";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; 98 - 101.

40.  D. Osintsev, V. Sverdlov, S. Selberherr:
"Evaluation of Spin Lifetime in Strained UT2B Silicon-On-Insulator MOSFETs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; 236 - 239. https://doi.org/10.1109/SISPAD.2013.6650618

39.  D. Osintsev, V. Sverdlov, S. Selberherr:
"Influence of Surface Roughness Scattering on Spin Lifetime in Silicon";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; 76 - 77.

38.  D. Osintsev, V. Sverdlov, S. Selberherr:
"Influence of the Valley Degeneracy on Spin Relaxation in Thin Silicon Films";
Poster: International Conference on Ultimate Integration of Silicon (ULIS), University of Warwick, UK; 2013-03-19 - 2013-03-21; in: "The 14th Edition of the `International Conference on Ultimate Integration on Silicon´ (ULIS 2013)", (2013), ISBN: 978-1-4673-4802-7; 221 - 224. https://doi.org/10.1109/ULIS.2013.6523525

37.  V. Sverdlov, H. Mahmoudi, A. Makarov, D. Osintsev, J. Weinbub, T. Windbacher, S. Selberherr:
"Modeling Spin-Based Devices in Silicon";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan (invited); 2013-06-04 - 2013-06-07; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; 70 - 71.

36.  D. Osintsev, V. Sverdlov, S. Selberherr:
"Reduction of Momentum and Spin Relaxation Rate in Strained Thin Silicon Films";
Talk: European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania; 2013-09-16 - 2013-09-20; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2013), ISBN: 978-1-4799-0649-9; 334 - 337. https://doi.org/10.1109/ESSDERC.2013.6818886

35.  D. Osintsev, V. Sverdlov, S. Selberherr:
"Reduction of the Surface Roughness Induced Spin Relaxation in SOI Structures: An Analytical Approach";
Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Paris, France; 2013-01-21 - 2013-01-23; in: "Conference Proceedings of the Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", 46 (2013), 1 pages.

34.  D. Osintsev, V. Sverdlov, S. Selberherr:
"Shear Strain: An Efficient Spin Lifetime Booster in Advanced UTB2 SOI MOSFETs";
Talk: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; 2013-04-08 - 2013-04-11; in: "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4; 64 - 65.

33.  A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Simulation of Magnetic Oscillations in a System of two MTJs with a Shared Free Layer";
Poster: Soft Magnetic Materials Conference (SMM), Budapest, Hungary; 2013-09-01 - 2013-09-04; in: "Abstracts Book of The 21st International Conference on Soft Magnetic Materials", (2013), 101.

32.  D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films";
Talk: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Toronto, Canada; 2013-05-12 - 2013-05-16; in: "223th ECS Meeting", 894 (2013), ISBN: 978-1-56677-866-4; 1.

31.  D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Enhancement in Strained Thin Silicon Films";
Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 2013-12-08 - 2013-12-13; in: "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2013), 2 pages.

30.  T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Switching Optimization of an Electrically Read- and Writable Magnetic Logic Gate";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; 238 - 239.

29.  S. E. Tyaginov, D. Osintsev, Yu. Illarionov, J.M. Park, H. Enichlmair, M. I. Vexler, T. Grasser:
"Tunnelling of strongly non-equilibrium carriers in the transistors of traditional configuration";
Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 2013-09-16 - 2013-09-20; in: "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3; 441.

28.  D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Using Strain to Increase the Reliability of Scaled Spin MOSFETs";
Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in: "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5; 770 - 773. https://doi.org/10.1109/IPFA.2013.6599272

27.  D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; 153 - 156.

26.  T. Windbacher, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Fully Electrically Read- Write Magneto Logic Gates";
Talk: The 5th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMS, Crete, Greece; 2012-10-07 - 2012-10-10; in: "Book of Abstracts", (2012), 1 pages.

25.  D. Osintsev, V. Sverdlov, S. Selberherr:
"Modeling Spintronic Effects in Silicon";
Talk: International Workshop on Mathematics for Semiconductor Heterostructures (MSH), Berlin, Germany (invited); 2012-09-24 - 2012-09-28; in: "Abstracts International Workshop on Mathematics for Semiconductor Heterostructures (MSH)", (2012), 3 pages.

24.  D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Reduction of Surface Roughness Induced Spin Relaxation in MOSFETs by Strain";
Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 229 - 230.

23.  D. Osintsev, Z. Stanojevic, O. Baumgartner, V. Sverdlov, S. Selberherr:
"Strain-Induced Reduction of Surface Roughness Dominated Spin Relaxation in MOSFETs";
Poster: International Conference on Physics of Semiconductor (ICPS), Zurich, Switzerland; 2012-07-29 - 2012-08-03; in: "31st International Conference on the Physics of Semiconductors (ICPS 2012)", 1566 (2012), ISBN: 978-0-7354-1194-4; 1 pages. https://doi.org/10.1063/1.4848413

22.  D. Osintsev, V. Sverdlov, S. Selberherr:
"Surface Roughness Induced Reduction of Spin Relaxation in Thin Silicon Films";
Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona (invited); 2012-12-02 - 2012-12-07; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)S)", (2012), ISBN: 978-3-901578-25-0; 33.

21.  D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Surface Roughness Induced Spin Scattering and Relaxation in Silicon SOI MOSFETs";
Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 2012-07-23 - 2012-07-25; in: "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), B3.

20.  D. Osintsev, V. Sverdlov, S. Selberherr:
"Using Strain for the Reduction of Surface Roughness Induced Spin Relaxation in Field-Effect Transistors with Thin Silicon Body";
Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Montpellier, France; 2012-01-23 - 2012-01-25; in: "Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2012), 77 - 78.

19.  D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Valley Splitting and Spin Relaxation in Strained Silicon Quantum Wells";
Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 2012-08-05 - 2012-08-08; in: "Book of Abstracts", (2012), P-27.

18.  A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"About the Switching Process in Magnetic Tunnel Junctions with Two Fixed Layers and One Soft Magnetic Layer";
Poster: Soft Magnetic Materials Conference (SMM), Kos, Greece; 2011-09-18 - 2011-09-22; in: "Abstracts Book of The 20th International Conference on Soft Magnetic Materials", (2011), ISBN: 978-960-9534-14-7; 444.

17.  D. Osintsev, A. Makarov, S. Selberherr, V. Sverdlov:
"An InAs-Based Spin Field-Effect Transistor: A Path to Room Temperature Operation";
Talk: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 2011-12-04 - 2011-12-09; in: "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2011), 2 pages.

16.  D. Osintsev, V. Sverdlov, Z. Stanojevic, S. Selberherr:
"Ballistic Spin Field Effect Transistor Based on Silicon Nanowires";
Talk: APS March Meeting, Dallas, Texas, USA; 2011-03-21 - 2011-03-25; in: "Bulletin American Physical Society (APS March Meeting 2011)", (2011).

15.  D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
"Ballistic Spin Field-Effect Transistors Built on Silicon Fins";
Poster: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada, Spain; 2011-01-17 - 2011-01-19; in: "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), 59 - 60.

14.  D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 2011-08-30 - 2011-09-02; in: "ECS Transactions", (2011), ISBN: 978-1-56677-900-5; 155 - 162. https://doi.org/10.1149/1.3615189

13.  D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Ballistic Transport in Spin Field-Effect Transistors Built on Si and InAs";
Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 2011-08-01 - 2011-08-05; in: "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), 229.

12.  D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Ballistic Transport in Spin Field-Effect Transistors Built on Silicon";
Talk: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 2011-07-17 - 2011-07-22; in: "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 pages.

11.  A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer";
Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 2011-09-28 - 2011-09-30; in: "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), ISBN: 978-4-86348-200-5; 2 pages.

10.  A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Micromagnetic Modeling of Penta-Layer Magnetic Tunnel Junctions with a Composite Soft Layer";
Talk: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 2011-07-17 - 2011-07-22; in: "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 pages.

9.  A. Makarov, V. Sverdlov, D. Osintsev, J. Weinbub, S. Selberherr:
"Modeling of the Advanced Spin Transfer Torque Memory: Macro- and Micromagnetic Simulations";
Talk: The European Simulation and Modelling Conference (ESM), Guimaraes, Portugal; 2011-10-24 - 2011-10-26; in: "Proceedings of the 25th European Simulation and Modelling Conference", (2011), ISBN: 978-90-77381-66-3; 177 - 181.

8.  A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Modeling of the Switching Process in Multi-Layered Magnetic Tunnel Junctions";
Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 2011-08-01 - 2011-08-05; in: "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), 238.

7.  A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Optimization of the Penta-Layer Magnetic Tunnel Junction for Fast STTRAM Switching";
Talk: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 2011-12-04 - 2011-12-09; in: "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2011), 2 pages.

6.  D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; 59 - 62. https://doi.org/10.1109/SISPAD.2011.6035049

5.  D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors Operated at Elevated Temperature";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 pages.

4.  D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, J. Weinbub, S. Selberherr:
"Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors";
Talk: Meeting of the Electrochemical Society (ECS), Montreal, Canada; 2011-05-01 - 2011-05-06; in: "Meeting Abstracts", ECS, MA2011-01(23): 1453 (2011), 1.

3.  A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Switching Time and Current Reduction Using a Composite Free Layer in Magnetic Tunnel Junctions";
Poster: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 pages.

2.  D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Transport Modeling in Spin Field-Effect Transistors Built on Silicon Fins";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2011-06-06 - 2011-06-10; in: "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), 64.

1.  D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
"Transport Properties of Spin Field-Effect Transistors Built on Si and InAs";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Cork, Ireland; 2011-03-14 - 2011-03-16; in: "Proceedings of the 12th International Conference on Ultimate Integration on Silicon (ULIS)", IEEE, (2011), ISBN: 978-1-4577-0090-3; 210 - 213. https://doi.org/10.1109/ULIS.2011.5757998

Doctor's Theses (authored and supervised)

1.  D. Osintsev:
"Modeling Spintronic Effects in Silicon";
Supervisor, Reviewer: V. Sverdlov, D. Süss; Institut für Mikroelektronik, 2014; oral examination: 2014-05-28. https://doi.org/10.34726/hss.2014.24842

Diploma and Master Theses (authored and supervised)

1.  V. Sverdlov, D. Osintsev, S. Selberherr:
"From Strained SOI MOSFET to Spin MOSFET with Strain: a Modeling Approach";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain (invited); 2014-01-27 - 2014-01-29.