Publications Ivan Starkov
45 recordsPublications in Scientific Journals
14. | A. S. Starkov, O. V. Pakhomov, I. Starkov: "Account for Mutual Influence of Electrical, Elastic, and Thermal Phenomena for Ferroelectric Domain Wall Modeling"; Ferroelectrics, 442 (2013), 1; 10 - 17. https://doi.org/10.1080/00150193.2013.773854 | |
13. | A. S. Starkov, I. Starkov: "Domain Wall Motion for Slowly Varying Electric Field"; Ferroelectrics, 442 (2013), 1; 1 - 9. https://doi.org/10.1080/00150193.2013.773852 | |
12. | I. Starkov, H. Enichlmair: "Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in Long-Channel n-MOSFETs"; Journal of Vacuum Science & Technology B, 31 (2013), 1; 01A118-1 - 01A118-7. https://doi.org/10.1116/1.4774106 | |
11. | A. S. Starkov, O. V. Pakhomov, I. Starkov: "Theoretical Model for Thin Ferroelectric Films and the Multilayer Structures Based on Them"; Journal of Experimental and Theoretical Physics, 116 (2013), 6; 987 - 994. https://doi.org/10.1134/S1063776113060149 | |
10. | A. Starkov, O. Pakhomov, I. Starkov: "Impact of the Pyroelectric Effect on Ferroelectric Phase Transitions"; Ferroelectrics, 427 (2012), 1; 78 - 83. https://doi.org/10.1080/00150193.2012.674413 | |
9. | A. Starkov, O. Pakhomov, I. Starkov: "Solid-State Cooler: New Opportunities"; Ferroelectrics, 430 (2012), 1; 108 - 114. https://doi.org/10.1080/00150193.2012.677730 | |
8. | I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements"; Solid State Phenomena, 178-179 (2011), 267 - 272. https://doi.org/10.4028/www.scientific.net/SSP.178-179.267 | |
7. | S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser: "An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation"; Microelectronics Reliability, 51 (2011), 1525 - 1529. https://doi.org/10.1016/j.microrel.2011.07.089 | |
6. | I. Starkov, S. E. Tyaginov, H. Enichlmair, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser: "Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment"; Journal of Vacuum Science & Technology B, 29 (2011), 01AB09-1 - 01AB09-8. https://doi.org/10.1116/1.3534021 | |
5. | A. S. Starkov, O. V. Pakhomov, I. Starkov: "Parametric Enhancement of Electrocaloric Effect by Periodically Varying External Field"; Technical Physics Letters, 79 (2011), 12; 1139 - 1141. https://doi.org/10.1134/S1063785011120133 | |
4. | A. Dedyk, Y. Pavlova, S. Karmanenko, A. Semenov, D. Semikin, O. Pakhomov, A. Starkov, I. Starkov: "Temperature Hysteresis of the Capacitance Dependence C(T) for Ferroelectric Ceramics"; Journal of Vacuum Science & Technology B, 29 (2011), 01A501-1 - 01A501-5. https://doi.org/10.1116/1.3532944 | |
3. | A. S. Starkov, O. V. Pakhomov, I. Starkov: "Effect of Thermal Phenomena on a Second-Order Phase Transition in the Landau-Ginzburg Model"; JETP Letters, 91 (2010), 10; 507 - 511. | |
2. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Microelectronics Reliability, 50 (2010), 1267 - 1272. https://doi.org/10.1016/j.microrel.2010.0 | |
1. | S. E. Tyaginov, V. Sverdlov, I. Starkov, W. Gös, T. Grasser: "Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate"; Microelectronics Reliability, 49 (2009), 998 - 1002. https://doi.org/10.1016/j.microrel.2009.06.018 | |
Contributions to Books
2. | A. Starkov, O. Pakhomov, I. Starkov, A. Zaitsev, I. Baranov: "Principles of Solid-State Cooler on Layered Multiferroics"; in: "5th International Conference on Magnetic Refrigeration at Room Temperature", C. V. Muller (ed.); Institut International Du Froid, 2012, ISBN: 978-2-91314-994-6, 573 - 581. | |
1. | S. E. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser: "Physics-Based Hot-Carrier Degradation Models"; in: "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11", R. Sah (ed.); ECS Transactions, 2011, ISBN: 978-1-56677-865-7, 321 - 352. https://doi.org/10.1149/1.3572292 | |
Talks and Poster Presentations (with Proceedings-Entry)
26. | A. Semenov, A. I. Dedyk, P. Y. Belavsky, Yu. V. Pavlova, S. Karmanenko, O. Pakhomov, A. Starkov, I. Starkov: "A Study of Ferroelectric Multilayer Structures Based on BST Films Containing High Concentration of Magnetic Ions"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 2012-06-25 - 2012-06-27; in: "Abstract Booklet", (2012), 77. | |
25. | A. Starkov, O. Pakhomov, I. Starkov: "Account for Mutual Influence of Electrical, Elastic and Thermal Phenomena for Ferroelectric Domain Wall Modeling"; Poster: 11th International Symposium on Ferroic Domains and Micro- to Nanoscopic Structures (ISFD), Ekaterinburg, Russia; 2012-08-20 - 2012-08-24; in: "Abstract Book", (2012), 238. | |
24. | I. Starkov, H. Enichlmair, S. E. Tyaginov, T. Grasser: "Analysis of the Threshold Voltage Turn-Around Effect in High-Voltage n-MOSFETs Due to Hot-Carrier Stress"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 pages. | |
23. | I. Starkov, H. Enichlmair, S. E. Tyaginov, T. Grasser: "Charge-Pumping Extraction Techniques for Hot-Carrier Induced Interface and Oxide Trap Spatial Distributions in MOSFETs"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2012-07-02 - 2012-07-06; in: "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6; 1 - 6. https://doi.org/10.1109/IPFA.2012.6306266 | |
22. | A. Starkov, I. Starkov: "Domain-Wall Motion for Slowly Varying Electric Field"; Talk: 11th International Symposium on Ferroic Domains and Micro- to Nanoscopic Structures (ISFD), Ekaterinburg, Russia; 2012-08-20 - 2012-08-24; in: "Abstract Book", (2012), 93. | |
21. | S. E. Tyaginov, I. Starkov, O. Triebl, M. Karner, C. Kernstock, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser: "Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2012-07-02 - 2012-07-06; in: "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6; 1 - 5. https://doi.org/10.1109/IPFA.2012.6306265 | |
20. | I. Starkov, H. Enichlmair, T. Grasser: "Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in High-Voltage n-MOSFET"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 2012-06-25 - 2012-06-27; in: "Abstract Booklet", (2012), 40. | |
19. | A. Starkov, I. Baranov, O. Pakhomov, I. Starkov, A. Zaitsev: "Principles of Solid-State Cooler on Layered Multiferroics"; Poster: 5th IIR/IIF International Conference on Magnetic Refrigeration at Room Temperature (THERMAG V), Grenoble, France; 2012-09-17 - 2012-09-20; in: "Conference guide & book of abstracts", (2012), 1 pages. | |
18. | A. I. Dedyk, Yu. V. Pavlova, A. Semenov, O. Pakhomov, A. Starkov, I. Starkov, P. Yu. Beliavskiy: "The Influence of "Heating-Cooling" Process Rate on Temperature Hysteresis of Ferroelectric Capasitor Structures"; Poster: 21st International Symposium on Applications of Ferroelectrics (ISAF), Aveiro, Portugal; 2012-07-09 - 2012-07-13; in: "Proceedings of 21st International Symposium on Applications of Ferroelectrics (ISAF)", (2012), ISBN: 978-1-4673-2668-1; 1 pages. https://doi.org/10.1109/ISAF.2012.6297838 | |
17. | A. Starkov, I. Starkov: "Theoretical Model of SPM-tip Electrostatic Field Accounting for Dead Layer and Domain Wall"; Talk: 21st International Symposium on Applications of Ferroelectrics (ISAF), Aveiro, Portugal; 2012-07-09 - 2012-07-13; in: "Proceedings of 21st International Symposium on Applications of Ferroelectrics (ISAF)", (2012), ISBN: 978-1-4673-2668-1; 1 pages. https://doi.org/10.1109/ISAF.2012.6297837 | |
16. | A. Starkov, O. Pakhomov, I. Starkov: "Thermodynamic Foundations of Solid-State Cooler Based on Multiferroic Materials"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 2012-06-25 - 2012-06-27; in: "Abstract Booklet", (2012), 76. | |
15. | I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping Measurements"; Talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; 2011-09-25 - 2011-09-30; in: "GADEST 2011: Abstract Booklet", (2011), 105 - 106. | |
14. | S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser: "An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation"; Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; in: "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", 51 (2011), 1525 - 1529. | |
13. | I. Starkov, A. S. Starkov, S. E. Tyaginov, H. Enichlmair, H. Ceric, T. Grasser: "An Analytical Model for MOSFET Local Oxide Capacitance"; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 pages. | |
12. | I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser: "Analysis of Worst-Case Hot-Carrier Conditions for n-type MOSFET"; Talk: 7th Conference on PhD Research in Microelectronics and Electronics (PRIME), Madonna di Campiglio, Italy; 2011-07-03 - 2011-07-07; in: "Proceedings of the 7th Conference on PhD Research in Microelectronics and Electronics", (2011), ISBN: 978-1-4244-9136-0; 4 pages. https://doi.org/10.1109/PRIME.2011.5966251 | |
11. | I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann: "Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of n- and p-channel High-Voltage MOSFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; 127 - 130. https://doi.org/10.1109/SISPAD.2011.6035066 | |
10. | I. Starkov, H. Ceric: "Impact of Interface State Density on MOSFET Local Oxide Capacitance Degradation During Hot-Carrier Stress"; Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 2011-09-28 - 2011-09-30; in: "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), 90 - 91. | |
9. | S. E. Tyaginov, I. Starkov, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser: "Impact of the Carrier Distribution Function on Hot-Carrier Degradation Modeling"; Talk: European Solid-State Device Research Conference (ESSDERC), Helsinki, Finland; 2011-09-12 - 2011-09-16; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2011), 151 - 154. | |
8. | S. E. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser: "Physics-Based Hot-Carrier Degradation Modeling"; Talk: 219th ECS Meeting, Montreal, Canada (invited); 2011-05-01 - 2011-05-06; in: "Meet. Abstr. - Electrochem. Soc. 2011", (2011)", (2011), 1 pages. | |
7. | S. E. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann: "Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage n-MOSFET"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; 123 - 126. https://doi.org/10.1109/SISPAD.2011.6035065 | |
6. | I. Starkov, S. E. Tyaginov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; 139 - 144. | |
5. | A. Dedyk, Y. Pavlova, O. V. Pakhomov, A. S. Starkov, I. Starkov, A. Semenov, S. Karmanenko: "Capacitance Hysteresis of the Temperature Dependence for Ferroelectric Barium-Strontium Titanate Capacitors"; Poster: 16th Workshop on Dielectric Materials (WoDiM), Bratislava, Slovakia; 2010-06-28 - 2010-06-30; in: "Book of Abstracts WoDiM 2010", (2010), 93. | |
4. | I. Starkov, S. E. Tyaginov, H. Enichlmair, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser: "HC Degradation Model: Interface State Profile-Simulations vs. Experiment"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in: "Book of Abstracts", (2010), 128. | |
3. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; 341 - 345. | |
2. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Montecassino Abbey and Gaeta; 2010-10-11 - 2010-10-15; in: "Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2010), 3 pages. | |
1. | I. Starkov, S. E. Tyaginov, T. Grasser: "Green´s Function Asymptotic in Two-Layered Periodic Medium"; Talk: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 2009-06-22 - 2009-06-26; in: "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), 111 - 112. | |
Talks and Poster Presentations (without Proceedings-Entry)
2. | A. Starkov, O. Pakhomov, I. Starkov: "Physical Model for Ferroelectrics Based on Pyrocurrent Consideration"; Poster: 12th European Meeting on Ferroelectricity, Bordeaux, France; 2011-06-26 - 2011-07-01. | |
1. | A. Starkov, O. Pakhomov, I. Starkov: "Solid-State Cooler - New Opportunities"; Poster: 12th European Meeting on Ferroelectricity, Bordeaux, France; 2011-06-26 - 2011-07-01. | |
Doctor's Theses (authored and supervised)
1. | I. Starkov: "Comprehensive Physical Modeling of Hot-Carrier Induced Degradation"; Supervisor, Reviewer: T. Grasser, M. Gröschl; Institut für Mikroelektronik, 2013; oral examination: 2013-01-14. | |