Staff Person Publications
  •  Intranet
t3kitt3kitt3kit
  • Home
  • TeachingOpen
    • Lectures
    • Bachelor Theses
    • Master Theses
    • Dissertations
  • ResearchOpen
    • Activities
    • Computing Infrastructure
    • Characterization Lab
    • Annual Reviews
    • Public Projects
    • Conferences
  • PublicationsOpen
    • Books and Book Editorships
    • Papers in Journals
    • Contributions to Books
    • Conference Presentations
    • Scientific Reports
    • Patents
    • Habilitation Theses
    • PhD Theses
    • Master's Theses
  • SoftwareOpen
    • Software
    • Download
    • License Agreement
  • StaffOpen
    • Active Staff
    • Former Staff
  • About UsOpen
    • Contact Us
    • Join Us
    • Partners
    • Imprint
    • Corporate Design
    • Sitemap
  • News

Publications Ivan Starkov

45 records


Publications in Scientific Journals

14. A. S. Starkov, O. V. Pakhomov, I. Starkov:
"Account for Mutual Influence of Electrical, Elastic, and Thermal Phenomena for Ferroelectric Domain Wall Modeling";
Ferroelectrics, 442, (2013), 10 - 17 doi:10.1080/00150193.2013.773854. BibTeX
13. A. S. Starkov, O. V. Pakhomov, I. Starkov:
"Theoretical Model for Thin Ferroelectric Films and the Multilayer Structures Based on Them";
Journal of Experimental and Theoretical Physics, 116, (2013), 987 - 994 doi:10.1134/S1063776113060149. BibTeX
12. A. S. Starkov, I. Starkov:
"Domain Wall Motion for Slowly Varying Electric Field";
Ferroelectrics, 442, (2013), 1 - 9 doi:10.1080/00150193.2013.773852. BibTeX
11. I. Starkov, H. Enichlmair:
"Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in Long-Channel n-MOSFETs";
Journal of Vacuum Science & Technology B, 31, (2013), 01A118-1 - 01A118-7 doi:10.1116/1.4774106. BibTeX
10. A. Starkov, O. Pakhomov, I. Starkov:
"Impact of the Pyroelectric Effect on Ferroelectric Phase Transitions";
Ferroelectrics, 427, (2012), 78 - 83 doi:10.1080/00150193.2012.674413. BibTeX
9. A. Starkov, O. Pakhomov, I. Starkov:
"Solid-State Cooler: New Opportunities";
Ferroelectrics, 430, (2012), 108 - 114 doi:10.1080/00150193.2012.677730. BibTeX
8. A. Dedyk, Y. Pavlova, S. Karmanenko, A. Semenov, D. Semikin, O. Pakhomov, A. Starkov, I. Starkov:
"Temperature Hysteresis of the Capacitance Dependence C(T) for Ferroelectric Ceramics";
Journal of Vacuum Science & Technology B, 29, (2011), 01A501-1 - 01A501-5 doi:10.1116/1.3532944. BibTeX
7. A. S. Starkov, O. V. Pakhomov, I. Starkov:
"Parametric Enhancement of Electrocaloric Effect by Periodically Varying External Field";
Technical Physics Letters, 79, (2011), 1139 - 1141 doi:10.1134/S1063785011120133. BibTeX
6. I. Starkov, S. E. Tyaginov, H. Enichlmair, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser:
"Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment";
Journal of Vacuum Science & Technology B, 29, (2011), 01AB09-1 - 01AB09-8 doi:10.1116/1.3534021. BibTeX
5. I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements";
Solid State Phenomena, 178-179, (2011), 267 - 272 doi:10.4028/www.scientific.net/SSP.178-179.267. BibTeX
4. S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser:
"An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation";
Microelectronics Reliability, 51, (2011), 1525 - 1529 doi:10.1016/j.microrel.2011.07.089. BibTeX
3. A. S. Starkov, O. V. Pakhomov, I. Starkov:
"Effect of Thermal Phenomena on a Second-Order Phase Transition in the Landau-Ginzburg Model";
JETP Letters, 91, (2010), 507 - 511. BibTeX
2. S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling";
Microelectronics Reliability, 50, (2010), 1267 - 1272 doi:10.1016/j.microrel.2010.0. BibTeX
1. S. E. Tyaginov, V. Sverdlov, I. Starkov, W. Gös, T. Grasser:
"Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate";
Microelectronics Reliability, 49, (2009), 998 - 1002 doi:10.1016/j.microrel.2009.06.018. BibTeX

Contributions to Books

2. A. Starkov, O. Pakhomov, I. Starkov, A. Zaitsev, I. Baranov:
"Principles of Solid-State Cooler on Layered Multiferroics";
in "5th International Conference on Magnetic Refrigeration at Room Temperature", C. V. Muller (ed); Institut International Du Froid, 2012, ISBN: 978-2-91314-994-6, 573 - 581. BibTeX
1. S. E. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser:
"Physics-Based Hot-Carrier Degradation Models";
in "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11", R. Sah (ed); ECS Transactions, 2011, ISBN: 978-1-56677-865-7, 321 - 352 doi:10.1149/1.3572292. BibTeX

Talks and Poster Presentations (with Proceedings-Entry)

26. A. Starkov, I. Baranov, O. Pakhomov, I. Starkov, A. Zaitsev:
"Principles of Solid-State Cooler on Layered Multiferroics";
Poster: 5th IIR/IIF International Conference on Magnetic Refrigeration at Room Temperature (THERMAG V), Grenoble, France; 2012-09-17 - 2012-09-20; in "Conference guide & book of abstracts", (2012), 1 page(s) . BibTeX
25. A. Starkov, O. Pakhomov, I. Starkov:
"Account for Mutual Influence of Electrical, Elastic and Thermal Phenomena for Ferroelectric Domain Wall Modeling";
Poster: 11th International Symposium on Ferroic Domains and Micro- to Nanoscopic Structures (ISFD), Ekaterinburg, Russia; 2012-08-20 - 2012-08-24; in "Abstract Book", (2012), 238. BibTeX
24. A. Starkov, I. Starkov:
"Domain-Wall Motion for Slowly Varying Electric Field";
Talk: 11th International Symposium on Ferroic Domains and Micro- to Nanoscopic Structures (ISFD), Ekaterinburg, Russia; 2012-08-20 - 2012-08-24; in "Abstract Book", (2012), 93. BibTeX
23. A. I. Dedyk, Yu. V. Pavlova, A. Semenov, O. Pakhomov, A. Starkov, I. Starkov, P. Yu. Beliavskiy:
"The Influence of "Heating-Cooling" Process Rate on Temperature Hysteresis of Ferroelectric Capasitor Structures";
Poster: 21st International Symposium on Applications of Ferroelectrics (ISAF), Aveiro, Portugal; 2012-07-09 - 2012-07-13; in "Proceedings of 21st International Symposium on Applications of Ferroelectrics (ISAF)", (2012), ISBN: 978-1-4673-2668-1, 1 page(s) doi:10.1109/ISAF.2012.6297838. BibTeX
22. A. Starkov, I. Starkov:
"Theoretical Model of SPM-tip Electrostatic Field Accounting for Dead Layer and Domain Wall";
Talk: 21st International Symposium on Applications of Ferroelectrics (ISAF), Aveiro, Portugal; 2012-07-09 - 2012-07-13; in "Proceedings of 21st International Symposium on Applications of Ferroelectrics (ISAF)", (2012), ISBN: 978-1-4673-2668-1, 1 page(s) doi:10.1109/ISAF.2012.6297837. BibTeX
21. I. Starkov, H. Enichlmair, S. E. Tyaginov, T. Grasser:
"Charge-Pumping Extraction Techniques for Hot-Carrier Induced Interface and Oxide Trap Spatial Distributions in MOSFETs";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2012-07-02 - 2012-07-06; in "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6, 1 - 6 doi:10.1109/IPFA.2012.6306266. BibTeX
20. S. E. Tyaginov, I. Starkov, O. Triebl, M. Karner, C. Kernstock, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser:
"Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation";
Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2012-07-02 - 2012-07-06; in "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6, 1 - 5 doi:10.1109/IPFA.2012.6306265. BibTeX
19. A. Semenov, A. I. Dedyk, P. Y. Belavsky, Yu. V. Pavlova, S. Karmanenko, O. Pakhomov, A. Starkov, I. Starkov:
"A Study of Ferroelectric Multilayer Structures Based on BST Films Containing High Concentration of Magnetic Ions";
Poster: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 2012-06-25 - 2012-06-27; in "Abstract Booklet", (2012), 77. BibTeX
18. A. Starkov, O. Pakhomov, I. Starkov:
"Thermodynamic Foundations of Solid-State Cooler Based on Multiferroic Materials";
Poster: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 2012-06-25 - 2012-06-27; in "Abstract Booklet", (2012), 76. BibTeX
17. I. Starkov, H. Enichlmair, T. Grasser:
"Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in High-Voltage n-MOSFET";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 2012-06-25 - 2012-06-27; in "Abstract Booklet", (2012), 40. BibTeX
16. I. Starkov, H. Enichlmair, S. E. Tyaginov, T. Grasser:
"Analysis of the Threshold Voltage Turn-Around Effect in High-Voltage n-MOSFETs Due to Hot-Carrier Stress";
Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX
15. I. Starkov, A. S. Starkov, S. E. Tyaginov, H. Enichlmair, H. Ceric, T. Grasser:
"An Analytical Model for MOSFET Local Oxide Capacitance";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) . BibTeX
14. S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser:
"An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation";
Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; in "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2011), 51, 1525 - 1529. BibTeX
13. I. Starkov, H. Ceric:
"Impact of Interface State Density on MOSFET Local Oxide Capacitance Degradation During Hot-Carrier Stress";
Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 2011-09-28 - 2011-09-30; in "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), 90 - 91. BibTeX
12. I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping Measurements";
Talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; 2011-09-25 - 2011-09-30; in "GADEST 2011: Abstract Booklet", (2011), 105 - 106. BibTeX
11. S. E. Tyaginov, I. Starkov, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser:
"Impact of the Carrier Distribution Function on Hot-Carrier Degradation Modeling";
Talk: European Solid-State Device Research Conference (ESSDERC), Helsinki, Finland; 2011-09-12 - 2011-09-16; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2011), 151 - 154. BibTeX
10. I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann:
"Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of n- and p-channel High-Voltage MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 127 - 130 doi:10.1109/SISPAD.2011.6035066. BibTeX
9. S. E. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann:
"Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage n-MOSFET";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 123 - 126 doi:10.1109/SISPAD.2011.6035065. BibTeX
8. I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser:
"Analysis of Worst-Case Hot-Carrier Conditions for n-type MOSFET";
Talk: 7th Conference on PhD Research in Microelectronics and Electronics (PRIME), Madonna di Campiglio, Italy; 2011-07-03 - 2011-07-07; in "Proceedings of the 7th Conference on PhD Research in Microelectronics and Electronics", (2011), ISBN: 978-1-4244-9136-0, 4 page(s) doi:10.1109/PRIME.2011.5966251. BibTeX
7. S. E. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser:
"Physics-Based Hot-Carrier Degradation Modeling";
Talk: 219th ECS Meeting, Montreal, Canada; (invited) 2011-05-01 - 2011-05-06; in "Meet. Abstr. - Electrochem. Soc. 2011", (2011)", (2011), 1 page(s) . BibTeX
6. S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Montecassino Abbey and Gaeta; 2010-10-11 - 2010-10-15; in "Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2010), 3 page(s) . BibTeX
5. I. Starkov, S. E. Tyaginov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations";
Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 139 - 144. BibTeX
4. S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 341 - 345. BibTeX
3. A. Dedyk, Y. Pavlova, O. V. Pakhomov, A. S. Starkov, I. Starkov, A. Semenov, S. Karmanenko:
"Capacitance Hysteresis of the Temperature Dependence for Ferroelectric Barium-Strontium Titanate Capacitors";
Poster: 16th Workshop on Dielectric Materials (WoDiM), Bratislava, Slovakia; 2010-06-28 - 2010-06-30; in "Book of Abstracts WoDiM 2010", (2010), 93. BibTeX
2. I. Starkov, S. E. Tyaginov, H. Enichlmair, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser:
"HC Degradation Model: Interface State Profile-Simulations vs. Experiment";
Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 128. BibTeX
1. I. Starkov, S. E. Tyaginov, T. Grasser:
"Green´s Function Asymptotic in Two-Layered Periodic Medium";
Talk: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 2009-06-22 - 2009-06-26; in "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), 111 - 112. BibTeX

Talks and Poster Presentations (without Proceedings-Entry)

2. A. Starkov, O. Pakhomov, I. Starkov:
"Physical Model for Ferroelectrics Based on Pyrocurrent Consideration";
Poster: 12th European Meeting on Ferroelectricity, Bordeaux, France; 2011-06-26 - 2011-07-01; . BibTeX
1. A. Starkov, O. Pakhomov, I. Starkov:
"Solid-State Cooler - New Opportunities";
Poster: 12th European Meeting on Ferroelectricity, Bordeaux, France; 2011-06-26 - 2011-07-01; . BibTeX

Doctor's Theses (authored and supervised)

1. I. Starkov:
"Comprehensive Physical Modeling of Hot-Carrier Induced Degradation";
Reviewer: T. Grasser, M. Gröschl; Institut für Mikroelektronik, 2013, oral examination: 2013-01-14. BibTeX
  • Active Staff
  • Former Staff

Institute for Microelectronics
Head: Univ. Prof. Dipl.-Ing. Dr. techn. Tibor Grasser
Deputy Head: O. Univ. Prof. Dipl.-Ing. Dr. techn. Dr.h.c. Siegfried Selberherr
Contact Us    |    Join Us    |    Imprint
© E360 - Institute for Microelectronics 2018