Papers in Conference Proceedings Papers in Journals and Books Edited Books Doctoral Theses Master's Theses Bachelor's Theses	Publications Link to the publication database of the Vienna University of Technology Papers in Conference Proceedings [V72] R. Orio, H. Ceric, J. Cervenka, S. Selberherr: "The Effect of Microstructure on the Electromigration Lifetime Distribution"; Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 07-06-2009 - 07-10-2009; in: "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2009)", (2009), 731 - 734. [V71] I. Starkov, S. Tyaginov, T. Grasser: "Green's Function Asymptotic in Two-Layered Periodic Medium"; Talk: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 06-22-2009 - 06-26-2009; in: "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), 111 - 112. [V70] V. Sverdlov, O. Baumgartner, S. Tyaginov, T. Windbacher, S. Selberherr: "Subband Structure in Ultra-Thin Silicon Films"; Talk: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 06-22-2009 - 06-26-2009; in: "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), 62 - 63. [V69] V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr: "Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting"; Poster: Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads, Sardinia; 06-14-2009 - 06-19-2009; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads", (2009), 58. [V68] P.-J. Wagner, T. Aichinger, T. Grasser, M. Nelhiebel, L.K.J. Vandamme: "Possible Correlation between Flicker Noise and Bias Temperature Stress"; Talk: International Conference on Noise and Fluctuations (ICNF), Pisa; 06-14-2009 - 06-19-2009; in: "Proceedings of the 20th International Conference on Noise and Fluctuations", (2009), 621 - 624. [V67] V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr: "Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Ultra-Thin Films"; Talk: 2009 Silicon Nanoelectronics Workshop, Kyoto; 06-13-2009 - 06-14-2009; in: "Proceedings of 2009 Silicon Nanoelectronics Workshop", (2009), 95 - 96. [V66] O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina: "Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB Devices"; Talk: International Workshop on Computational Electronics (IWCE), Beijing; 05-27-2009 - 05-29-2009; in: "13th International Workshop on Computational Electronics", (2009), 53 - 56. [V65] G. Milovanovic, H. Kosina: "Nonparabolicity Effects in Quantum Cascade Lasers"; Poster: International Workshop on Computational Electronics (IWCE), Beijing; 05-27-2009 - 05-29-2009; in: "13th International Workshop on Computational Electronics", (2009), 189 - 192. [V64] N. Neophytou, H. Kosina, T. Rakshit: "Quantum Transport Simulations of InGaAs HEMTs: Influence of Mass Variations on the Device Performance"; Poster: International Workshop on Computational Electronics (IWCE), Beijing; 05-27-2009 - 05-29-2009; in: "13th International Workshop on Computational Electronics", (2009), 161 - 164. [V63] P. Schwaha, O. Baumgartner, R. Heinzl, M. Nedjalkov, S. Selberherr, I. Dimov: "Classical Approximation of the Scattering Induced Wigner Correction Equation"; Poster: International Workshop on Computational Electronics (IWCE), Beijing; 05-27-2009 - 05-29-2009; in: "13th International Workshop on Computational Electronics", (2009), 177 - 180. [V62] V. Sverdlov, O. Baumgartner, H. Kosina, S. Selberherr, F. Schanovsky, D. Esseni: "The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers"; Talk: International Workshop on Computational Electronics (IWCE), Beijing; 05-27-2009 - 05-29-2009; in: "13th International Workshop on Computational Electronics", (2009), 49 - 52. [V61] S. Tyaginov, V. Sverdlov, W. Gös, T. Grasser: "Statistics of Si-O Bond-Breakage Rate Variations induced by O-Si-O Angle Fluctuations"; Talk: International Workshop on Computational Electronics (IWCE), Beijing; 05-27-2009 - 05-29-2009; in: "13th International Workshop on Computational Electronics", (2009), 29 - 32. [V60] T. Windbacher, V. Sverdlov, S. Selberherr: "Modeling of Low Concentrated Buffer DNA Detection with Suspend Gate Field-Effect Transistors (SGFET)"; Poster: International Workshop on Computational Electronics (IWCE), Beijing; 05-27-2009 - 05-29-2009; in: "13th International Workshop on Computational Electronics", (2009), 169 - 172. [V59] V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr: "Impact of Confinement of Semiconductor and Band Engineering on Future Device Performance"; Talk: 215th Meeting of the Electrochemical Society, Silicon-on-Insulator Technology and Devices, San Francisco (invited); 05-24-2009 - 05-29-2009; in: "Proceedings 215th Meeting of the Electrochemical Society, Silicon-on-Insulator Technology and Devices", 19/4 (2009), ISBN: 978-1-56677-712-4; 15 - 26. [V58] T. Aichinger, M. Nelhiebel, T. Grasser: "On the Temperature Dependence of NBTI Recovery"; Talk: International Reliability Physics Symposium (IRPS), Montreal (invited); 04-26-2009 - 04-30-2009; in: "2009 IEEE International Reliability Physics Symposium Proceedings", (2009), 1. [V57] T. Aichinger, M. Nelhiebel, T. Grasser: "Unambiguous Identification of the NBTI Recovery Mechanism using Ultra-Fast Temperature Changes"; Talk: International Reliability Physics Symposium (IRPS), Montreal; 04-26-2009 - 04-30-2009; in: "2009 IEEE International Reliability Physics Symposium Proceedings", (2009), 2 - 7. [V56] T. Grasser, B. Kaczer, W. Gös, T. Aichinger, P. Hehenberger, M. Nelhiebel: "A Two-Stage Model for Negative Bias Temperature Instability"; Talk: International Reliability Physics Symposium (IRPS), Montreal; 04-26-2009 - 04-30-2009; in: "2009 IEEE International Reliability Physics Symposium Proceedings", (2009), 33 - 44. [V55] P. Hehenberger, T. Aichinger, T. Grasser, W. Gös, O. Triebl, B. Kaczer, M. Nelhiebel: "Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement Technique"; Talk: International Reliability Physics Symposium (IRPS), Montreal; 04-26-2009 - 04-30-2009; in: "2009 IEEE International Reliability Physics Symposium Proceedings", (2009), 1033 - 1038. [V54] B. Kaczer, T. Grasser, J. Martin-Martinez, E. Simoen, M. Aoulaiche, P. Roussel, G. Groeseneken: "NBTI from the Perspective of Defect States with Widely Distributed Time Scales"; Talk: International Reliability Physics Symposium (IRPS), Montreal; 04-26-2009 - 04-30-2009; in: "2009 IEEE International Reliability Physics Symposium Proceedings", (2009), 55 - 60. [V53] S. Tyaginov, W. Gös, T. Grasser, V. Sverdlov, P. Schwaha, R. Heinzl, F. Stimpfl: "Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole Crystal"; Talk: International Reliability Physics Symposium (IRPS), Montreal; 04-26-2009 - 04-30-2009; in: "2009 IEEE International Reliability Physics Symposium Proceedings", (2009), 514 - 522. [V52] M. Pourfath, H. Kosina: "Carbon Based Electronics: A Computational Study"; Talk: Quantum Systems and Devices: Analysis, Simulations, Applications, Beijing (invited); 04-20-2009 - 04-24-2009; in: "Quantum Systems and Devices: Analysis, Simulations, Applications", (2009), 18. [V51] M. Vasicek: "Advanced Macroscopic Transport Models"; Talk: Quantum Systems and Devices: Analysis, Simulations, Applications, Beijing (invited); 04-20-2009 - 04-24-2009; in: "Quantum Systems and Devices: Analysis, Simulations, Applications", (2009), 32. [V50] S. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser: "Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics"; Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 04-13-2009 - 04-17-2009; in: "Proceedings of the 2009 MRS Spring Meeting", (2009). [V49] S. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser: "Si-O Bond-Breakage Energetics under Consideration of the Whole Crystal"; Talk: International Semiconductor Technology Conference & China Semiconductor Technology International Conference, Shanghai; 03-19-2009 - 03-20-2009; in: "Proceedings of the International Semiconductor Technology Conference & China Semiconductor Technology International Conference", (2009), 84. [V48] V. Sverdlov, T. Windbacher, O. Baumgartner, F. Schanovsky, S. Selberherr: "Valley Splitting in Thin Silicon Films from a Two-Band k·p Model"; Poster: International Conference on Ultimate Integration of Silicon (ULIS), Aachen; 03-18-2009 - 03-20-2009; in: "Proceedings of the 10th International Conference on Ultimate Integration of Silicon", (2009), 277 - 280. [V47] O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina: "Numerical Study of the Electron Subband Structure in Strained Silicon UTB Devices"; Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Göteborg; 01-19-2009 - 01-21-2009; in: "EUROSOI 2009 Conference Proceedings", (2009), 57 - 58. [V46] V. Sverdlov, T. Windbacher, O. Baumgartner, S. Selberherr: "Electron Subband Structure and Valley Splitting in Silicon Ultra-Thin Body SOI Structures from the Two-Band k·p Model"; Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Göteborg; 01-19-2009 - 01-21-2009; in: "EUROSOI 2009 Conference Proceedings", (2009), 81 - 82. [V45] T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer: "Study of the Properties of Biotin-Streptavidin Sensitive Biofets"; Talk: Second International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC), Porto; 01-14-2009 - 01-17-2009; in: "Final Program and Book of Abstracts", (2009), 42. [V44] M. Pourfath, S. Selberherr: "Modeling Current Transport in Carbon Nanotube Transistors"; Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong (invited); 12-08-2008 - 12-10-2008; in: "IEEE International Conference on Electron Devices and Solid-State Circuit 2008", (2008), ISBN: 978-1-4244-2540-2; 6 pages. [V43] V. Palankovski: "Novel High-Performance GaN Transistors"; Talk: Advanced Heterostructures and Nanostructures Workshop (AHNW), Kona (invited); 12-07-2008 - 12-12-2008; in: "Abstracts Advanced Heterostructures and Nanostructures Workshop (AHNW)", (2008), MO-03. [V42] M. Pourfath, S. Selberherr: "Analysis of Carbon Nanotube Photo-Detectors"; Talk: Advanced Heterostructures and Nanostructures Workshop (AHNW), Kona (invited); 12-07-2008 - 12-12-2008; in: "Abstracts Advanced Heterostructures and Nanostructures Workshop (AHNW)", (2008), TU-06. [V41] S. Vitanov, V. Palankovski: "Enhancement Mode HEMTs: Evaluation of Two Approaches by Numerical Simulation"; Talk: Junior Scientist Conference 2008, Technische Universität Wien; 11-17-2008 - 11-18-2008; in: "Junior Scientist Conference Proceedings", (2008), ISBN: 978-3-200-01612-5; 221 - 222. [V40] A. Yazdanpanah, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr: "A Numerical Study of Graphene Nano-Ribbon based Resonant Tunneling Diodes"; Talk: International Symposium on Graphene Devices: Technology, Physics, and Modeling (ISGD), Japan; 11-17-2008 - 11-19-2008; in: "International Symposium on Graphene Devices: Technology, Physics, and Modeling", (2008), 66 - 67. [V39] A. Yazdanpanah, H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "Stress-Induced Anisotropy of Electromigration in Copper Interconnects"; Talk: International Workshop on Stress-Induced Phenomena in Metallization, Austin; 11-05-2008 - 11-07-2008; in: "Proceedings of the Stress-Induced Phenomena in Metallization: 10th International Workshop", (2008), 66 - 67. [V38] S. Vitanov, V. Palankovski, G. Pozzovivo, J. Kuzmik, R. Quay: "Systematical Study of InAlN/GaN Devices by Numerical Simulation"; Talk: European Workshop on Heterostructure Technology, Venice; 11-03-2008 - 11-05-2008; in: "HETECH 2008 Book of Abstracts", (2008), ISBN: 978-88-6129-296-3; 159 - 160. [V37] V. Sverdlov, S. Selberherr: "Modeling and Simulation of Advanced Floating Body Z-RAM Memory Cells"; Talk: European Simulation and Modeling Conference (ESMC), Le Havre; 10-27-2008 - 10-29-2008; in: "Proceedings European Simulation and Modeling Conference (ESM)", (2008), ISBN: 978-90-77381-44-1; 380 - 384. [V36] M. Pourfath, H. Kosina, S. Selberherr: "Current Transport in Carbon Nanotube Transistors"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Beijing (invited); 10-20-2008 - 10-23-2008; in: "The 9th Internationl Conference on Solid-State and Integrated-Circuit Technology", (2008), ISBN: 978-1-4244-2186-2; 361 - 364. [V35] T. Grasser, B. Kaczer, T. Aichinger, W. Gös, M. Nelhiebel: "Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks"; Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 10-18-2008 - 10-22-2008; in: "2008 IEEE International Integrated Reliability Workshop Final Report", (2008), 91 - 95. [V34] H. Reisinger, R. Vollertsen, P.-J. Wagner, T. Huttner, A. Martin, S. Aresu, W. Gustin, T. Grasser, C. Schlünder: "The Effect of Recovery on NBTI Characterization of Thick Non-Nitrided Oxides"; Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 10-18-2008 - 10-22-2008; in: "2008 IEEE International Integrated Reliability Workshop Final Report", (2008), 1 - 6. [V33] S. Okhonin, M. Nagoga, C. Lee, J. Colinge, A. Afzalian, R. Yan, N. Akhavan, W. Xiong, V. Sverdlov, S. Selberherr, C. Mazure: "Ultra-Scaled Z-RAM Cell"; Talk: 2008 IEEE International SOI Conference, New Paltz; 10-06-2008 - 10-09-2008; in: "2008 IEEE International SOI Conference Proceedings", (2008), ISBN: 978-1-4244-1954-8; 157 - 158. [V32] T. Grasser, B. Kaczer, W. Gös: "An Energy-Level Perspective of Bias Temperature Instability"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht (invited); 09-29-2008 - 10-02-2008; in: "Proceedings of the 19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2008). [V31] T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger: "A General Bottom-Up Modeling Approach for BioFETs"; Poster: 2. Internationale Konferenz NanoSens2008, Vienna; 09-29-2008 - 09-30-2008; in: "Abstracts Conf.on Nanosensors for Industrial Applications (NANOSENS)", (2008). [V30] S. Vitanov, V. Palankovski: "Simulation of AlGaN/GaN HEMTs with InGaN Cap Layer"; Talk: International Scientific and Applied Science Conference (ET), Sozopol; 09-24-2008 - 09-26-2008; in: "The Seventeenth International Scientific and Applied Science Conference Electronics ET'2008 Proceedings of the Conference Book 4", (2008), ISSN: 1313-1842; 67 - 70. [V29] M. Pourfath, H. Kosina, S. Selberherr: "Reduction of the Dark-Current in Carbon Nanotube Photo-Detectors"; Talk: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 09-15-2008 - 09-19-2008; in: "European Solid-State Device Research Conference", (2008), 214 - 217. [V28] O. Baumgartner, M. Karner, H. Kosina: "Modeling of High-k-Metal-Gate-Stacks Using the Non-Equilibrium Green's Function Formalism"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone; 09-09-2008 - 09-11-2008; in: "International Conference on Simulation of Semiconductor Processes and Devices 2008", (2008), ISBN: 978-1-4244-1753-7. [V27] O. Baumgartner, P. Schwaha, M. Karner, M. Nedjalkov, S. Selberherr: "Coupling of Non-Equilibrium Green's Function and Wigner Function Approaches"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone; 09-09-2008 - 09-11-2008; in: "International Conference on Simulation of Semiconductor Processes and Devices 2008", (2008), ISBN: 978-1-4244-1753-7; 345 - 348. [V26] H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "Analysis of Microstructure Impact on Electromigration"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone; 09-09-2008 - 09-11-2008; in: "International Conference on Simulation of Semiconductor Processes and Devices 2008", (2008), ISBN: 978-1-4244-1753-7; 241 - 244. [V25] O. Ertl, S. Selberherr: "Three-Dimensional Topography Simulation Using Advanced Level Set and Ray Tracing Methods"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone; 09-09-2008 - 09-11-2008; in: "International Conference on Simulation of Semiconductor Processes and Devices 2008", (2008), ISBN: 978-1-4244-1753-7; 325 - 328. [V24] W. Gös, M. Karner, S. Tyaginov, P. Hehenberger, T. Grasser: "Level Shifts and Gate Interfaces as Vital Ingredients in Modeling of Charge Trapping"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone; 09-09-2008 - 09-11-2008; in: "International Conference on Simulation of Semiconductor Processes and Devices 2008", (2008), ISBN: 978-1-4244-1753-7; 69 - 72. [V23] T. Grasser, W. Gös, B. Kaczer: "Modeling Bias Temperature Instability During Stress and Recovery"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone; 09-09-2008 - 09-11-2008; in: "International Conference on Simulation of Semiconductor Processes and Devices 2008", (2008), ISBN: 978-1-4244-1753-7; 65 - 68. [V22] R. Orio, H. Ceric, S Carniello, S. Selberherr: "Analysis of Electromigration in Redundant Vias"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone; 09-09-2008 - 09-11-2008; in: "International Conference on Simulation of Semiconductor Processes and Devices 2008", (2008), ISBN: 978-1-4244-1753-7; 237 - 240. [V21] M. Pourfath, H. Kosina: "Numerical Study of Carbon Nanotube Infra-Red Photo-Detectors"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone; 09-09-2008 - 09-11-2008; in: "International Conference on Simulation of Semiconductor Processes and Devices 2008", (2008), ISBN: 978-1-4244-1753-7; 81 - 84. [V20] F. Stimpfl, R. Heinzl, P. Schwaha, S. Selberherr: "A Robust Parallel Delaunay Mesh Generation Approach Suitable for Three-Dimensional TCAD"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone; 09-09-2008 - 09-11-2008; in: "International Conference on Simulation of Semiconductor Processes and Devices 2008", (2008), ISBN: 978-1-4244-1753-7; 265 - 268. [V19] V. Sverdlov, T. Windbacher, S. Selberherr: "Mobility Enhancement in Thin Silicon Films: Strain and Thickness Dependences of the Effective Masses and Non-Parabolicity Parameter"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone; 09-09-2008 - 09-11-2008; in: "International Conference on Simulation of Semiconductor Processes and Devices 2008", (2008), ISBN: 978-1-4244-1753-7; 145 - 148. [V18] M. Vasicek, J. Cervenka, M. Karner, T. Grasser: "Consistent Higher-Order Transport Models for SOI MOSFETs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone; 09-09-2008 - 09-11-2008; in: "International Conference on Simulation of Semiconductor Processes and Devices 2008", (2008), ISBN: 978-1-4244-1753-7; 129 - 132. [V17] T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer: "Simulation of Field-Effect Biosensors (BioFETs)"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone; 09-09-2008 - 09-11-2008; in: "International Conference on Simulation of Semiconductor Processes and Devices 2008", (2008), ISBN: 978-1-4244-1753-7; 193 - 196. [V16] C. Poschalko, S. Selberherr: "Radiated Emission from the Slot of a Slim Cubical Enclosure with Multiple Sources Inside"; Talk: International Symposium on Electromagnetic Compatibility (EMC), Hamburg; 09-08-2008 - 09-12-2008; in: "Proceedings of the 8th International Symposium on Electromagnetic Compatibility", (2008), ISBN: 978-3-930400-60-7; 109 - 114. [V15] R. Orio, S Carniello, H. Ceric, S. Selberherr: "Analysis of Electromigration in Dual-Damascene Interconnect Structures"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Gramado; 09-01-2008 - 09-04-2008; in: "Proceedings Intl.Symposium on Microelectronics Technology and Devices (SBMicro)", (2008), ISBN: 978-1-56677-646-2; 337 - 348. [V14] M. Pourfath, O. Baumgartner, H. Kosina: "On the Non-locality of the Electron-Photon Self-Energy: Application to Carbon Nanotube Photo-Detectors"; Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Nottingham; 09-01-2008 - 09-04-2008; in: "Proceedings of the 8th International Conference on Numerical Simulation of Optoelectronic Devices", (2008), ISBN: 978-1-4244-2307-1; 99 - 100. [V13] V. Sverdlov, S. Selberherr: "Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Gramado; 09-01-2008 - 09-04-2008; in: "Proceedings Intl.Symposium on Microelectronics Technology and Devices (SBMicro)", (2008), ISBN: 978-1-56677-646-2; 159 - 168. [V12] S. Vitanov, P. Vitanov, V. Palankovski: "Two-Dimensional Numerical Optimization of MIS Solar Cell on N-Type Silicon"; Poster: European Photovoltaic Solar Energy Conference, Valencia; 09-01-2008 - 09-05-2008; in: "23rd European Photovoltaic Solar Energy Conference", (2008), 1743 - 1745. [V11] C. Poschalko, S. Selberherr: "Domain Separation with Port Interfaces for Calculation of Emissions from Enclosure Slots"; Talk: International Symposium on Electromagnetic Compatibility (EMC), Detroit; 08-18-2008 - 08-22-2008; in: "Proceedings International Symposium on Electromagnetic Compatibility", 1113 (2008), ISBN: 978-1-4244-1699-8. [V10] T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer: "Simulation of Field-Effect Biosensors (BioFETs) for Biotin-Streptavidin Complexes"; Poster: 29th International Conference on the Physics of Semiconductors (ICPS 2008), Rio de Janeiro; 07-27-2008 - 08-01-2008; in: "29th International Conference on the Physics of Semiconductors", (2008). [V9] R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr: "Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment"; Talk: Workshop on Parallel Object-Oriented Scientific Computing (POOSC), Paphos; 07-08-2008; in: "7th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing (POOSC'08)", (2008), 5 pages. [V8] P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr: "Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications"; Talk: Workshop on Parallel Object-Oriented Scientific Computing (POOSC), Paphos; 07-08-2008; in: "7th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing (POOSC'08)", (2008), 7 pages. [V7] C. Poschalko, S. Selberherr: "Calculation of the Radiation from the Slot of a Slim Enclosure with a Cavity Resonator Model"; Talk: International Zurich Symposium on Electromagnetic Compatibility, Singapore; 05-19-2008 - 05-22-2008; in: "19th International Zurich Symposium on Electromagnetic Compatibility,", (2008), 634 - 637. [V6] G. Milovanovic, H. Kosina: "Valence Band Deformation Potentials in Semiconductors"; Poster: International SiGe Technology and Device Meeting (ISTDM), Hsinchu; 05-11-2008 - 05-14-2008; in: "Abstract Book", (2008), 215 - 216. [V5] T. Grasser: "Negative Bias Temperature Instability: Modeling Challenges and Perspectives"; Talk: International Reliability Physics Symposium (IRPS), Phoenix (Tutorial); 04-27-2008 - 05-01-2008; in: "2008 Reliability Physics Tutorial Notes", (2008), 113 - 120. [V4] T. Grasser, B. Kaczer, W. Gös: "An Energy-Level Perspective of Bias Temperature Instability"; Talk: International Reliability Physics Symposium (IRPS), Phoenix; 04-27-2008 - 05-01-2008; in: "Proceedings of the International Reliability Physics Symposium", (2008), 28 - 38. [V3] B. Kaczer, T. Grasser, P. Roussel, J. Martin-Martinez, R. O'Connor, B. O'Sullivan, G. Groeseneken: "Ubiquitous Relaxation in BTI Stressing - New Evaluation and Insights"; Talk: International Reliability Physics Symposium (IRPS), Phoenix; 04-27-2008 - 05-01-2008; in: "Proceedings of the International Reliability Physics Symposium", (2008), 20 - 27. [V2] V. Sverdlov, T. Windbacher, H. Kosina, S. Selberherr: "Stress-Induced Valley Splitting in Silicon Thin Films"; Talk: International Conference on Ultimate Integration of Silicon (ULIS), Udine; 03-12-2008 - 03-14-2008; in: "Proceedings of the 9th International Conference on Ultimate Integration on Silicon", (2008), ISBN: 978-1-4244-1730-8; 93 - 96. [V1] V. Sverdlov, H. Kosina, S. Selberherr: "Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k·p Theory and Beyond"; Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Cork; 01-23-2008 - 01-25-2008; in: "Proceedings of the 4th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2008), 41 - 42. Papers in Journals and Books [P25] H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects"; IEEE Transactions on Device and Materials Reliability, 9 (2009), 1; 9 - 19. [P24] H. Ceric, S. Selberherr: "Editorial Preface to the Special Section on Electromigration Published in March 2009"; IEEE Transactions on Device and Materials Reliability, 9 (2009), 2; 103. [P23] A. Garcia-Barrientos, V. Grimalsky, E. Gutierrez-Dominguez, V. Palankovski: "Nonstationary Effects of the Space Charge in Semiconductor Structures"; Journal of Applied Physics, 105 (2009), 074501-1 - 074501-6. [P22] T. Grasser, B. Kaczer: "Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs"; IEEE Transactions on Electron Devices, 56 (2009), 5; 1056 - 1062. [P21] B. Kaczer, A. Veloso, P. Roussel, T. Grasser, G. Groeseneken: "Investigation of Bias-Temperature Instability in Work-Function-Tuned High-k/Metal-Gate Stacks"; Journal of Vacuum Science and Technology B, 27 (2009), 1; 459 - 462. [P20] C. Poschalko, S. Selberherr: "Cavity Model for the Slot Radiation of an Enclosure Excited by Printed Circuit Board Traces With Different Loads"; IEEE Transactions on Electromagnetic Compatibility, 51 (2009), 1; 18 - 24. [P19] T. Grasser, W. Gös, B. Kaczer: "Towards Engineering Modeling of Negative Bias Temperature Instability"; in: "Defects in Microelectronic Materials and Devices", Taylor and Francis/CRC Press, 2008, 399 - 436. [P18] S. Tyaginov, M. Vexler, N. Sokolov, S. Suturin, A. Banshchikov, T. Grasser, B. Meinerzhagen: "Determination of Correlation Length for Thickness Fluctuations in Thin Oxide and Fluoride Films"; Journal of Physics D: Applied Physics, 42 (2009), 115307; 1 - 6. [P17] M. Vexler, N. Sokolov, S. Suturin, A. Banshchikov, S. Tyaginov, T. Grasser: "Electrical Characterization and Modeling of the Au/CaF2/nSi(111) Sructures with High-Quality Tunnel-Thin Fluoride Layer"; Journal of Applied Physics, 105 (2009), 083716; 1 - 6. [P16] T. Aichinger, M. Nelhiebel, T. Grasser: "On the Temperature Dependence of NBTI Recovery"; Microelectronics Reliability, 48 (2008), 1178 - 1184. [P15] J. Cervenka, H. Ceric, S. Selberherr: "Three-Dimensional Simulation of Sacrificial Etching"; Microsystem Technologies, 14 (2008), 665 - 671. [P14] W. Gös, M. Karner, V. Sverdlov, T. Grasser: "Charging and Discharging of Oxide Defects in Reliability Issues"; IEEE Transactions on Device and Materials Reliability, 8 (2008), 3; 491 - 500. [P13] T. Grasser: "Towards Understanding Negative Bias Temperature Instability"; Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International, 12-16 Oct. 2008 (2008), 145. [P12] T. Grasser, P.-J. Wagner, P. Hehenberger, W. Gös, B. Kaczer: "A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability"; IEEE Transactions on Device and Materials Reliability, 8 (2008), 3; 526 - 535. [P11] G. Karlowatz, W. Wessner, H. Kosina: "Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation"; Mathematics and Computers in Simulation, 79 (2008), 972 - 979. [P10] P. Lenahan, B. Knowlton, J. Conley, B. Tonti, J. Suehle, T. Grasser: "Introduction to the Special Issue on the 2007 International Integrated Reliability Workshop"; IEEE Transactions on Device and Materials Reliability, 8 (2008), 3; 490. [P9] K. Martens, B. Kaczer, T. Grasser, B. Jaeger, M. Meuris, H.E. Maes, G. Groeseneken: "Applicability of Charge Pumping on Germanium MOSFETs"; IEEE Electron Device Letters, 29 (2008), 12; 1364 - 1366. [P8] M. Nedjalkov, D. Vasileska: "Semi-Discrete 2D Wigner-Particle Approach"; Journal of Computational Electronics, 7 (2008), 3; 222 - 225. [P7] M. Pourfath, H. Kosina, S. Selberherr: "Numerical Study of Quantum Transport in Carbon Nanotube Transistors"; Mathematics and Computers in Simulation, 79 (2008), 1051 - 1059. [P6] V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr: "Two-Band k·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility"; Solid-State Electronics, 52 (2008), 1563 - 1568. [P5] V. Sverdlov, H. Kosina, S. Selberherr: "Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory"; Journal of Computational Electronics, 7 (2008), 3; 164 - 167. [P4] V. Sverdlov, S. Selberherr: "Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k·p Theory and Beyond"; Solid-State Electronics, 52 (2008), 12; 1861 - 1866. [P3] E. Ungersböck, W. Gös, S. Dhar, H. Kosina, S. Selberherr: "The Effect of Uniaxial Stress on Band Structure and Electron Mobility of Silicon"; Mathematics and Computers in Simulation, 79 (2008), 4; 1071 - 1077. [P2] M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser: "A 2D Non-Parabolic Six-Moments Model"; Solid-State Electronics, 52 (2008), 1606 - 1609. [P1] S. Vitanov, V. Palankovski: "Normally-Off AlGaN/GaN HEMTs with InGaN Cap Layer: A Simulation Study"; Solid-State Electronics, 52 (2008), 11; 1791 - 1795. Edited Books [E3] R. Quay: "Gallium Nitride Electronics"; Springer-Verlag, Berlin-Heidelberg, 2008, ISBN: 978-3-540-71890-1; 469 pages. [E1] J. W. Swart, S. Selberherr, A. A. Susin, J. A. Diniz, N. Morimoto (ed.): "Microelectronics Technology and Devices - SBMICRO 2008"; The Electrochemical Society, 2008, ISBN: 978-1-56677-646-2; 661 pages. Doctoral Theses [T1] G. Karlowatz: "Advanced Monte Carlo Simulation for Semiconductor Devices"; Reviewer: H. Kosina, E. Benes; Institut für Mikroelektronik, 2008; oral examination: 06-24-2009. Master's Theses [D6] Z. Stanojevic: "Simulation of Carrier Transport in Ultra-Thin-Body Devices"; Supervisor: T. Grasser; Institut für Mikroelektronik, 2008; final examination: 06-19-2009. [D5] C. Klöckler: "Automatic Solver Control for Linear Equation Systems"; Supervisor: E. Langer; Institut für Mikroelektronik, 2008; final examination: 06-18-2009. [D4] K. Rupp: "Multiphysics Modelling in the Context of Generative Programming"; Supervisor: E. Langer; Institut für Mikroelektronik, 2008; final examination: 04-24-2009. [D3] C. Kernstock: "Design and Implementation of TCAD Environment Tools"; Supervisor: H. Kosina, M. Karner; Institut für Mikroelektronik, 2008; final examination: 11-28-2008. [D2] A. Weihe: "Evaluation and Implementation of Communication-Interfaces for SIESTA"; Supervisor: E. Langer; Institut für Mikroelektronik, 2008; final examination: 11-28-2008. [D1] P. Prause: "Design and Integration of Distributed Computing Concepts in a TCAD Framework"; Supervisor: E. Langer, M. Karner; Institut für Mikroelektronik, 2008; final examination: 10-09-2008. Bachelor's Theses [B20] B. Heinzl: "Investigation of Various Interpolation Methods"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009. [B19] R. Magnet: "A Comparative Study on the Conjugate Gradient and the Newton Method for Solving a Linear Set of Equations"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009. [B18] P. Reininger: "Numerical Analysis of the Wave Function Progragation at a Potential Barrier"; Supervisor: H. Kosina; Institut für Mikroelektronik, 2009. [B17] K. Schnass: "Interfacing Solver Routines"; Supervisor: M. Karner; Institut für Mikroelektronik, 2009. [B16] R. Sereinig: "Numerical Solution of the Two-Dimensional Stationary Poisson Equation"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009. [B15] G. Artner: "Finding Roots, ... by Chance"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009. [B14] M. Aschauer: "Integration Methods Involving Error Analysis"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009. [B13] M. Derfler: "Extrapolation in Minimos-NT"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009. [B12] T. Fäulhammer: "Image Processing"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009. [B11] P. Marko: "Numerical Fourier Transform of Periodical, Real Signals"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009. [B10] M. Nowak: "'Pollution in Groundwater Flow' ARGESIM Benchmark C19R"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009. [B9] S. Schwarz: "Computer-Aided Evaluation of Taylor Polynoms"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009. [B8] D. Veljkovic: "Comparative Study on Various Interpolation Methods"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009. [B7] M. Hofbauer: "Calculation of Stationary Magnetic Fields"; Supervisor: E. Langer; Institut für Mikroelektronik, 2008. [B6] B. Maier: "Numerical Differentiation"; Supervisor: E. Langer; Institut für Mikroelektronik, 2008. [B5] M. Niederer: "Algorithms for Solving First Order Ordinary Differential Equation Systems"; Supervisor: E. Langer; Institut für Mikroelektronik, 2008. [B4] M. Ostheim-Dzerowycz: "Exemplary Demonstration of Selected Object-Oriented Programming Techniques in C++"; Supervisor: E. Langer; Institut für Mikroelektronik, 2008. [B3] M. Svarc: "Comparison of Numerical Integration Methods"; Supervisor: E. Langer; Institut für Mikroelektronik, 2008. [B2] M. Wagner: "Solution of Non-Linear Macroeconomic Models"; Supervisor: E. Langer; Institut für Mikroelektronik, 2008. [B1] A. Wolfschluckner: "Numerical Solution of the One-Dimensional Schrödinger Equation"; Supervisor: E. Langer; Institut für Mikroelektronik, 2008.
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