Professors

Tibor Grasser
Univ.Prof. Dipl.-Ing. Dr.techn., Head of Institute
 Preface
Siegfried Selberherr
O.Univ.Prof. Dipl.-Ing. Dr.techn. Dr.h.c.
 Preface
Hajdin Ceric
Associate Prof. Dipl.-Ing. Dr.techn.
 Bezier Models for Electromigration-Induced Voids
Lado Filipovic
Assistant Prof. Privatdoz. Dr.techn. MSc
 Application of 2D Semiconductors in Conductometric Sensors
Hans Kosina
Ao.Univ.Prof. Dipl.-Ing. Dr.techn.
 Numerical Modeling of Nanostructured Semiconductor Devices
Viktor Sverdlov
Privatdoz. MSc PhD
 Ballistic Conductance of Topological Insulator Nanoribbons
Josef Weinbub
Assistant Prof. Privatdoz. Dipl.-Ing. Dr.techn. BSc
 Modeling Coulomb Interaction with a Wigner-Poisson Coupling Scheme

Administration

Silvia Antoneanu
BSc
Ewald Haslinger
Petra Kamptner-Jonas
Manfred Katterbauer
Dipl.-Ing. (FH)
Diana Pop
MA MSc
Markus Schloffer
Ing.
Katharina Zeh
BA

Researchers

Luiz Aguinsky
MSc
 Monte Carlo Modeling of Low-Bias SF6 Plasma Etching of Silicon
Mario Bendra
Dipl.-Ing.
 A Finite Element Method Approach to MRAM Modeling: Verification and Calibration
Johann Cervenka
Senior Scientist Dipl.-Ing. Dr.techn.
 Matrix Classes in C++ for Python
Lukas Cvitkovich
Univ.Ass. Dipl.-Ing.
 Multiscale Modelling of the Formation of Amorphous SiO2
Al-Moatasem Bellah El-Sayed
MChem PhD
 Atomistic Modeling of Materials Used in Electronic Devices
Johannes Ender
Univ.Ass. MSc
 Improving Spin-Orbit Torque Memory Cell Switching With the Help of Reinforcement Learning
Simone Fiorentini
MSc
 Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions
Tomas Hadamek
MSc
 Heat Modeling in Magnetoresistive Random Access Memories
Yury Illarionov
MSc PhD Dr.techn.
 Selection Criteria for Insulators in 2D Nanoelectronics
Markus Jech
Dipl.-Ing. Dr.techn.
 Structural and Electronic Properties of Pb-Centers
Markus Kampl
Dipl.-Ing. Dr.techn.
 Improved Sampling Algorithms for Monte Carlo Device Simulation
Xaver Klemenschits
Univ.Ass. MSc
 Combining Process Simulation and Emulation using ViennaLS
Theresia Knobloch
Dipl.-Ing.
 Performance Limits of Hexagonal Boron Nitride for Scaled CMOS Devices Based on 2D Materials
Robert Kosik
Dipl.-Ing. Dr.techn.
 Numerical Solution of the Constrained Wigner Equation
Christoph Lenz
Dipl.-Ing.
 Automatic Feature Detection Methods for Implicit Surfaces
Alexander Makarov
MSc Dr.techn.
 Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: A Modeling Approach
Paul Manstetten
Univ.Ass. Dipl.-Ing. (FH) Dr.techn. MSc
 Robust and Efficient Approximation of Potential Energy Surfaces using Gaussian Process Regression
Jakob Michl
MSc
 Charge Trapping at Cryogenic Temperatures
Diego Milardovich
MSc
 Machine Learning Prediction of Defect Structures in Amorphous SiO2
Mihail Nedjalkov
MSc PhD D.Sc., Senior Postdoc
Roberto Orio
Univ.Ass. Dr.techn.
 Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer
Michael Quell
Univ.Ass. Dipl.-Ing. BSc
 A Parallel Velocity Extension for Level-Set-Based Material Flow on Hierarchical Meshes in Process TCAD
Felipe Ribeiro
MSc
 Parallelization Strategies for Linear and Nonlinear Solvers for the Boltzmann Equation
Francio Rodrigues
MSc BSc
 Fluorocarbon Plasma Etching Modeling of Via Structures
Karl Rupp
MSc Dipl.-Ing. Dr.techn.
 Fast Parallel Solvers for Semiconductor Device Simulation
Alexander Scharinger
Univ.Ass. Dipl.-Ing.
 Adaptive Importance Sampling for Top-Down Monte Carlo Flux Calculations
Christian Schleich
Dipl.-Ing.
 Modelling of BTI for Different SiC DMOSFET Technologies
Bernhard Stampfer
Dipl.-Ing. Dr.techn.
 Statistical Characterization of Defects Causing Random Telegraph Noise
Alexander Toifl
Dipl.-Ing.
 Continuum Level-Set Model for Anisotropic Wet Etching of Patterned Sapphire Substrates
Konstantinos Tselios
MSc
 Distribution of Step Heights of Defects in SiON Transistors
Stanislav Tyaginov
PhD, Senior Postdoc
Aleksandr Vasilev
MSc
 Modeling the Hysteresis of Current-Voltage Characteristics in Planar 4H-SiC MOSFETs
Surendran Velmurugan
MSc
Dominic Waldhör
Univ.Ass. Dipl.-Ing. BSc
 Automated Defect Characterization Based on BTI Measurements
Michael Waltl
Senior Scientist Dipl.-Ing. Dr.techn.
 Analysis of Electron and Hole Trapping Components in SiON Transistors
Christoph Wilhelmer
Univ.Ass. Dipl.-Ing.
 CTLs of Point Defects in SiO2 and their Dependence on the Atomic Environment
Weifeng Zhou
Dr.-Ing.
 The Study of Organic Light-Emitting Diodes through Master Equations