• [BK-4] T. Grasser:
  "Noise in Nanoscale Semiconductor Devices";
  Springer Science+Business Media New York, (2020), ISBN: 978-3-030-37499-0, 729 page(s) doi:10.1007/978-3-030-37500-3.
  
  
• [BK-3] J. A. Martino, B.-Y. Nguyen, F. Gamiz, H. Ishii, J.-P. Raskin, S. Selberherr, E. Simoen:
  "Advanced CMOS-Compatible Semiconductor Devices 19";
  ECS Transactions, The Electrochemical Society, Vol.97, No.5, (2020), ISBN: 978-1-62332-604-3, 192 page(s).
  
  
• [BK-2] L. Filipovic, T. Grasser:
  "Miniaturized Transistors";
  MDPI, (2019), ISBN: 978-3-03921-010-7, 202 page(s) doi:10.3390/books978-3-03921-011-4.
  
  
• [BK-1] D. Janes, H. Riechert, T. Machida, J. Conley, J. Weinbub, S.M. Goodnick:
  "Innovative Nanoscale Devices and Systems";
  Institute for Microelectronics, TU Wien, (2019), ISBN: 978-0-578-61722-0, 157 page(s).
  
  

• [PJ-35] S. Khan, A. Shah, S. Chouhan, N. Gupta, J. Pandey, S. Vishvakarma:
  "A Symmetric D Flip-Flop Based PUF with Improved Uniqueness";
  Microelectronics Reliability, 106 (2020), 113595 doi:10.1016/j.microrel.2020.113595.
  
  
• [PJ-34] R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
  "Two-Pulse Magnetic Field-Free Switching Scheme for Perpendicular SOT-MRAM with a Symmetric Square Free Layer";
  Physica B: Condensed Matter, 578 (2020), 411743 doi:10.1016/j.physb.2019.411743.
  
  
• [PJ-33] R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
  "Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAM";
  Solid-State Electronics, 168 (2020), 107730 doi:10.1016/j.sse.2019.107730.
  
  
• [PJ-32] A. Shah, D. Rossi, V. Sharma, S. Vishvakarma, M. Waltl:
  "Soft Error Hardening Enhancement Analysis of NBTI Tolerant Schmitt Trigger Circuit";
  Microelectronics Reliability, 107 (2020), 113617 doi:10.1016/j.microrel.2020.113617.
  
  
• [PJ-31] A. Shah, M. Waltl:
  "Bias Temperature Instability Aware and Soft Error Tolerant Radiation Hardened 10T SRAM";
  Electronics, 9 (2020), 256 doi:10.3390/electronics9020256.
  
  
• [PJ-30] B. Stampfer, F. Schanovski, T. Grasser, M. Waltl:
  "Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors";
  Micromachines, 11 (2020)(invited), 446 doi:10.3390/mi11040446.
  
  
• [PJ-29] M. Waltl:
  "Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS Transistors";
  IEEE Transactions on Device and Materials Reliability, 20 (2020)(invited), 242 - 250 doi:10.1109/TDMR.2020.2988650.
  
  
• [PJ-28] A. Banshchikov, Yu. Illarionov, M. I. Vexler, S. Wachter, N. S. Sokolov:
  "Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer";
  Semiconductors (Physics of Semiconductor Devices), 53 (2019), 833 - 837 doi:10.1134/S1063782619060034.
  
  
• [PJ-27] J. Berens, G. Pobegen, T. Eichinger, G. Rescher, T. Grasser:
  "Cryogenic Characterization of NH₃ Post Oxidation Annealed 4H-SiC Trench MOSFETs";
  Materials Science Forum, 963 (2019), 175 - 179 doi:10.4028/www.scientific.net/MSF.963.175.
  
  
• [PJ-26] J. Berens, G. Pobegen, G. Rescher, T. Aichinger, T. Grasser:
  "NH₃ and NO + NH₃ Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability";
  IEEE Transactions on Electron Devices, 66 (2019), 4692 - 4697 doi:10.1109/TED.2019.2941723.
  
  
• [PJ-25] R. Bernhard, G. Pobegen, M. Rösch, R. Vytla, T. Grasser:
  "Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETs";
  IEEE Transactions on Device and Materials Reliability, 19 (2019), 133 - 139 doi:10.1109/TDMR.2019.2891794.
  
  
• [PJ-24] H. Ceric, H. Zahedmanesh, K. Croes:
  "Analysis of Electromigration Failure of Nano-Interconnects through a Combination of Modeling and Experimental Methods";
  Microelectronics Reliability, 100-101 (2019), 113362 doi:10.1016/j.microrel.2019.06.054.
  
  
• [PJ-23] G. Diamantopoulos, A. Hössinger, S. Selberherr, J. Weinbub:
  "A Shared Memory Parallel Multi-Mesh Fast Marching Method for Re-Distancing";
  Advances in Computational Mathematics, 45 (2019), 2029 - 2045 doi:10.1007/s10444-019-09683-z.
  
  
• [PJ-22] L. Filipovic, S. Selberherr:
  "Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors";
  Materials, 12 (2019)(invited), 2410 doi:10.3390/ma12152410.
  
  
• [PJ-21] S. Foster, M. Thesberg, N. Neophytou:
  "Quantum Transport Simulations for the Thermoelectric Power Factor in 2D Nanocomposites";
  Materials Today: Proceedings, 8 (2019), 690 - 695 doi:10.1016/j.matpr.2019.02.069.
  
  
• [PJ-20] J. Franco, Z. Wu, G. Rzepa, L. Ragnarsson, H. Dekkers, A. Vandooren, G Groeseneken, N. Horiguchi, N. Collaert, D. Linten, T. Grasser, B. Kaczer:
  "On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTI";
  IEEE Transactions on Device and Materials Reliability, 19 (2019), 268 - 274 doi:10.1109/TDMR.2019.2913258.
  
  
• [PJ-19] K. Giering, K. Puschkarsky, H. Reisinger, G. Rzepa, G.A. Rott, R. Vollertsen, T. Grasser, R. Jancke:
  "NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling";
  IEEE Transactions on Electron Devices, 66 (2019), 1662 - 1668 doi:10.1109/TED.2019.2901907.
  
  
• [PJ-18] Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, L. Mennel, M. Paur, M. Stöger-Pollach, A. Steiger-Thirsfeld, M. I. Vexler, M. Waltl, N. S. Sokolov, T. Müller, T. Grasser:
  "Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors";
  Nature Electronics, 2 (2019), 230 - 235 doi:10.1038/s41928-019-0256-8.
  
  
• [PJ-17] Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, M. I. Vexler, M. Lanza, N. S. Sokolov, A. Müller, T. Grasser:
  "Reliability of Scalable MoS2 FETs With 2 nm Crystalline CaF2 Insulators";
  2D Materials, 6 (2019), 045004 doi:10.1088/2053-1583/ab28f2.
  
  
• [PJ-16] M. Jech, A.-M. El-Sayed, S. E. Tyaginov, A. Shluger, T. Grasser:
  "Ab Initio Treatment of Silicon-Hydrogen Bond Rupture at Si/SiO₂ Interfaces";
  Physical Review B, 100 (2019), 195302 doi:10.1103/PhysRevB.100.195302.
  
  
• [PJ-15] X. Jing, Yu. Illarionov, E. Yalon, P. Zhou, T. Grasser, Y. Shi, M. Lanza:
  "Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects";
  Advanced Functional Materials, 30 (2019), 1901971 doi:10.1002/adfm.201901971.
  
  
• [PJ-14] S. Khan, A. Shah, N. Gupta, S. Chouhan, J. Pandey, S. Vishvakarma:
  "An Ultra-Low Power, Reconfigurable, Aging Resilient RO PUF for IoT Applications";
  Microelectronics Journal, 92 (2019), 104605 doi:10.1016/j.mejo.2019.104605.
  
  
• [PJ-13] M. Kittler, M. Reiche, B. Schwartz, H. Uebensee, H. Kosina, Z. Stanojevic, O. Baumgartner, T. Ortlepp:
  "Transport of Charge Carriers along Dislocations in Si and Ge";
  Physica Status Solidi A, 216 (2019), 1900287 doi:10.1002/pssa.201900287.
  
  
• [PJ-12] A. Lahlalia, O. Le Neel, R. Shankar, S. Selberherr, L. Filipovic:
  "Improved Sensing Capability of Integrated Semiconducting Metal Oxide Gas Sensor Devices";
  Sensors, 19 (2019) doi:10.3390/s19020374.
  
  
• [PJ-11] A. Makarov, B. Kaczer, A. Chasin, M. Vandemaele, E. Bury, M. Jech, A. Grill, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov:
  "Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach";
  IEEE Electron Device Letters, 40 (2019), 1579 - 1582 doi:10.1109/LED.2019.2933729.
  
  
• [PJ-10] C. Medina-Bailon, T. Sadi, M. Nedjalkov, H. Carillo-Nunez, J. Lee, O. Badami, V. Georgiev, S. Selberherr, A. Asenov:
  "Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism";
  IEEE Electron Device Letters, 40 (2019), 1571 - 1574 doi:10.1109/LED.2019.2934349.
  
  
• [PJ-9] N. Oliva, Yu. Illarionov, E. Casu, M. Cavalieri, T. Knobloch, T. Grasser, A. Ionescu:
  "Hysteresis Dynamics in Double-Gated n-Type WSe₂ FETs With High-k Top Gate Dielectric";
  IEEE Journal of the Electron Devices Society, 7 (2019), 1163 - 1169 doi:10.1109/JEDS.2019.2933745.
  
  
• [PJ-8] R. Orio, S. Selberherr, V. Sverdlov:
  "Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques";
  Proceedings of SPIE, 11090 (2019)(invited), 110903F-1 - 110903F-6 doi:10.1117/12.2529119.
  
  
• [PJ-7] K. Puschkarsky, T. Grasser, T. Aichinger, W. Gustin, H. Reisinger:
  "Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability";
  IEEE Transactions on Electron Devices, 66 (2019)(invited), 4604 - 4616 doi:10.1109/TED.2019.2938262.
  
  
• [PJ-6] K. Puschkarsky, H. Reisinger, G.A. Rott, C. Schluender, W. Gustin, T. Grasser:
  "An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps";
  IEEE Transactions on Electron Devices, 66 (2019), 4623 - 4630 doi:10.1109/TED.2019.2941889.
  
  
• [PJ-5] P. Sanvale, N. Gupta, V. Neema, A. Shah, S. Vishvakarma:
  "An Improved Read-Assist Energy Efficient Single Ended P-P-N Based 10T SRAM Cell for Wireless Sensor Networ";
  Microelectronics Journal, 92 (2019), 104611 doi:10.1016/j.mejo.2019.104611.
  
  
• [PJ-4] V. Sverdlov, S. Selberherr:
  "Current and Shot Noise at Spin-Dependent Hopping through Junctions with Ferromagnetic Contacts";
  Solid-State Electronics, 159 (2019), 43 - 50 doi:10.1016/j.sse.2019.03.053.
  
  
• [PJ-3] V. Vargiamidis, M. Thesberg, N. Neophytou:
  "Theoretical Model for the Seebeck Coefficient in Superlattice Materials with Energy Relaxation";
  Journal of Applied Physics, 126 (2019), 055105 doi:10.1063/1.5108607.
  
  
• [PJ-2] J. Woerle, V. Simonka, E. Müller, A. Hössinger, H. Sigg, S. Selberherr, J. Weinbub, M. Camarda, U. Grossner:
  "Surface Morphology of 4H-SiC After Thermal Oxidation";
  Materials Science Forum, 963 (2019), 180 - 183 doi:10.4028/www.scientific.net/MSF.963.180.
  
  
• [PJ-1] Z. Wu, J. Franco, A. Vandooren, B. Kaczer, Ph. Roussel, G. Rzepa, T. Grasser:
  "Improved PBTI Reliability in Junction-Less FET Fabricated at Low Thermal Budget for 3-D Sequential Integration";
  IEEE Transactions on Device and Materials Reliability, 9 (2019), 262 - 267 doi:10.1109/TDMR.2019.2906843.
  
  

• [BC-9] D. Waldhoer, A.-M. El-Sayed, Y. Wimmer, M. Waltl, T. Grasser:
  "Atomistic Modeling of Oxide Defects";
  in: "Noise in Nanoscale Semiconductor Devices", T. Grasser (ed); Springer Science+Business Media New York, 2020, ISBN: 978-3-030-37499-0, 609 - 648 doi:10.1007/978-3-030-37500-3_18.
  
  
• [BC-8] B. Stampfer, A. Grill, M. Waltl:
  "Advanced Electrical Characterization of Single Oxide Defects Utilizing Noise Signals";
  in: "Noise in Nanoscale Semiconductor Devices", T. Grasser (ed); Springer Science+Business Media New York, 2020, ISBN: 978-3-030-37499-0, 229 - 257 doi:10.1007/978-3-030-37500-3_7.
  
  
• [BC-7] S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Gös, V. Sverdlov:
  "Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM";
  in: "Advanced CMOS-Compatible Semiconductor Devices 19, Vol. 97, No. 5", J. A. Martino, B.-Y. Nguyen, F. Gamiz, H. Ishii, J.-P. Raskin, S. Selberherr, E. Simoen (ed); ECS Transactions, 2020, ISBN: 978-1-62332-604-3, 159 - 164 doi:10.1149/09705.0159ecst.
  
  
• [BC-6] M. Quell, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
  "Parallelized Construction of Extension Velocities for the Level-Set Method";
  in: "Parallel Processing and Applied Mathematics", R. Wyrzykowski, E. Deelman, J. Dongarra, K. Karczewski (ed); Springer International Publishing, 2020, ISBN: 978-3-030-43229-4, 548 - 552 doi:10.1007/978-3-030-43229-4_30.
  
  
• [BC-5] R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
  "Efficient Magnetic Field-Free Switching of a Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM";
  in: "Proceedings of the 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE Xplore, 2019, ISBN: 978-1-7281-1658-7, 1 - 4 doi:10.1109/EUROSOI-ULIS45800.2019.9041920.
  
  
• [BC-4] A. Shah, A. Moshrefi, M. Waltl:
  "Utilizing NBTI for Operation Detection of Integrated Circuits";
  in: "VLSI Design and Test 2019", A. Sengupta, S. Dasgupta, V. Singh, R. Sharma, S. Vishvakarma (ed); Springer, 2019, ISBN: 978-981-32-9767-8, 190 - 201 doi:10.1007/978-981-32-9767-8_17.
  
  
• [BC-3] L. Gnam, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
  "Accelerating Flux Calculations Using Sparse Sampling";
  in: "Miniaturized Transistors", L. Filipovic, T. Grasser (ed); MDPI, 2019, ISBN: 978-3-03921-010-7, 176 - 192 doi:10.3390/books978-3-03921-011-4.
  
  
• [BC-2] X. Klemenschits, S. Selberherr, L. Filipovic:
  "Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review";
  in: "Miniaturized Transistors", L. Filipovic, T. Grasser (ed); MDPI, 2019, ISBN: 978-3-03921-010-7, 105 - 135 doi:10.3390/books978-3-03921-011-4.
  
  
• [BC-1] R. Coppeta, A. Lahlalia, D. Kozic, R. Hammer, J. Riedler, G. Toschkoff, A.P. Singulani, Z. Ali, M. Sagmeister, S. Carniello, S. Selberherr, L. Filipovic:
  "Electro-Thermal-Mechanical Modeling of Gas Sensor Hotplates";
  in: "Sensor Systems Simulations", W. van Driel, O. Pyper, C. Schumann (ed); Springer Nature Switzerland AG, 2020, ISBN: 978-3-030-16577-2, 17 - 72 doi:10.1007/978-3-030-16577-2_2.
  
  

• [CP-58] M. Quell, G. Diamantopoulos, A. Hössinger, J. Weinbub:
  "Shared-Memory Block-Based Fast Marching Method for Hierarchical Meshes";
  Talk: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 08.06.2020 - 11.06.2020; in "Proceedings of the European Seminar on Computing (ESCO)", (2020), 1.
  
  
• [CP-57] S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
  "Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM";
  Talk: Meeting of the Electrochemical Society (ECS), Montreal, Canada; 10.05.2020 - 14.05.2020; in "Abstracts of the Meeting of the Electrochemical Society (ECS)", (2020) doi:10.1149/MA2020-01241389mtgabs.
  
  
• [CP-56] L. Filipovic, S. Selberherr:
  "Integration of Gas Sensors with CMOS Technology";
  Talk: Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia; (invited) 16.03.2020 - 18.03.2020; in "Proceedings Electron Devices Technology and Manufacturing Conference (EDTM)", (2020), 294 - 297.
  
  
• [CP-55] S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
  "Perpendicular STT-MRAM Switching at Fixed Voltage and at Fixed Current";
  Talk: Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia; 16.03.2020 - 18.03.2020; in "Proceedings Electron Devices Technology and Manufacturing Conference (EDTM)", (2020), 341 - 344.
  
  
• [CP-54] L. Filipovic, S. Selberherr:
  "Granularity Effects in Electromigration";
  Talk: IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica; (invited) 25.02.2020 - 28.02.2020; in "Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC)", (2020) doi:10.1109/LAEDC49063.2020.9072963.
  
  
• [CP-53] V. Sverdlov, S. Fiorentini, J. Ender, W. Goes, R. Orio, S. Selberherr:
  "Emerging CMOS Compatible Magnetic Memories and Logic";
  Talk: IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica; (invited) 25.02.2020 - 28.02.2020; in "Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC)", (2020) doi:10.1109/LAEDC49063.2020.9073332.
  
  
• [CP-52] C. Lenz, A. Scharinger, A. Hössinger, J. Weinbub:
  "A Novel Surface Mesh Coarsening Method for Flux-Dependent Topography Simulations of Semiconductor Fabrication Processes";
  Talk: International Conferences on Scientific Computing in Electrical Engineering (SCEE), Eindhoven, The Netherlands; 16.02.2020 - 20.02.2020; in "Book of Abstracts of the International Conferences on Scientific Computing in Electrical Engineering (SCEE)", (2020), 99 - 100.
  
  
• [CP-51] V. Sverdlov, S. Selberherr:
  "Spintronic Memories";
  Talk: Energy-Materials-Nanotechnology Fall Meeting (EMN), Chengdu, China; (invited) 16.12.2019 - 19.12.2019; in "Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN)", (2019), 19 - 21.
  
  
• [CP-50] M. Jech, S. Tyaginov, B. Kaczer, J. Franco, D. Jabs, C. Jungemann, M. Waltl, T. Grasser:
  "First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation";
  Talk: International Electron Devices Meeting (IEDM), San Francisco, USA; 07.12.2019 - 11.12.2019; in "Proceedings of the International Electron Devices Meeting (IEDM)", (2019) doi:10.1109/IEDM19573.2019.8993630.
  
  
• [CP-49] R. Orio, A. Makarov, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
  "A Dynamical Approach to Fast and Reliable External Field Free Perpendicular Magnetization Reversal by Spin-Orbit Torques";
  Poster: International Electron Devices Meeting (IEDM), San Francisco, USA; 07.12.2019 - 11.12.2019; in "Proceedings of the IEDM Special Poster Session Dedicated to MRAM", (2019), 1.
  
  
• [CP-48] C. Schleich, J. Berens, G. Rzepa, G. Pobegen, G. Rescher, S. E. Tyaginov, T. Grasser, M. Waltl:
  "Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs";
  Talk: International Electron Devices Meeting (IEDM), San Francisco, USA; 07.12.2019 - 11.12.2019; in "Proceedings of the International Electron Devices Meeting (IEDM)", (2019) doi:10.1109/IEDM19573.2019.8993446.
  
  
• [CP-47] S. Tyaginov, A. El-Sayed, A. Makarov, A. Chasin, H. Arimura, M. Vandemaele, M. Jech, E. Capogreco, L. Witters, A. Grill, A. De Keersgieter, G. Eneman, D. Linten, B. Kaczer:
  "Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs";
  Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 07.12.2019 - 11.12.2019; in "Proceedings of the International Electron Devices Meeting (IEDM)", (2019), 498 - 501 doi:10.1109/IEDM19573.2019.8993644.
  
  
• [CP-46] M. Ballicchia, M. Nedjalkov, S. Selberherr, J. Weinbub:
  "Potentials for Single Electron State Processing";
  Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 01.12.2019 - 06.12.2019; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), 111 - 112.
  
  
• [CP-45] S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
  "Comprehensive Modeling of Switching in Perpendicular STT-MRAM";
  Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 01.12.2019 - 06.12.2019; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), 107 - 108.
  
  
• [CP-44] R. Orio, S. Selberherr, J. Ender, S. Fiorentini, W. Goes, V. Sverdlov:
  "Robustness of the Two-Pulse Switching Scheme for SOT-MRAM";
  Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 01.12.2019 - 06.12.2019; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), 54 - 55.
  
  
• [CP-43] A. Shah, M. Waltl:
  "Low Cost and High Performance Radiation Hardened Latch Design for Reliable Circuits";
  Talk: IEEE International Conference on Electronics Circuits and Systems (ICECS), Genova, Italy; 27.11.2019 - 29.11.2019; in "Proceedings of the IEEE International Conference on Electronics Circuits and Systems (ICECS)", (2019), 197 - 200 doi:10.1109/ICECS46596.2019.8964962.
  
  
• [CP-42] T. Grasser:
  "CaF2 Insulators for Ultrascaled 2D Field Effect Transistors";
  Talk: IEEE EDS Distinguished Lecture at RWTH Aachen, Aachen, Germany; (invited) 26.11.2019; (2019).
  
  
• [CP-41] T. Grasser:
  "CaF2 Insulators for Ultrascaled 2D Field Effect Transistors";
  Talk: Workshop "Wafer-scale Integration of 2D materials", Aachen, Germany; (invited) 13.11.2019; (2019).
  
  
• [CP-40] S. Selberherr:
  "Status and Future of Solid-State Non-Volatile Memory";
  Talk: International Conference on Frontier Sciences, Beijing, China; (invited) 06.11.2019 - 07.11.2019; in "Book of Abstracts of the International Conference on Frontier Sciences", (2019), 97.
  
  
• [CP-39] H. Ceric, S. Selberherr, H. Zahedmanesh, R. Orio, K. Croes:
  "Assessment of Electromigration in Nano‐Interconnects";
  Talk: International Conference on Reliability and Stress-Related Phenomena in Nanoelectronics (IRSP), San Jose, USA; (invited) 04.11.2019 - 06.11.2019; in "Abstracts of the International Conference on Reliability and Stress-Related Phenomena in Nanoelectronics (IRSP)", (2019), 7.
  
  
• [CP-38] Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, M. I. Vexler, N. S. Sokolov, T. Müller, T. Grasser:
  "Reliability and Thermal Stability of MoS2 FETs with Ultrathin CaF2 Insulator";
  Talk: IEEE Nanotechnology Materials and Devices Conference (NMDC), Stockholm, Sweden; (invited) 27.10.2019 - 30.10.2019; (2019).
  
  
• [CP-37] A. Makarov, Ph. Roussel, E. Bury, M. Vandemaele, A. Spessot, D. Linten, B. Kaczer, S. E. Tyaginov:
  "On Correlation Between Hot-Carrier Stress Induced Device Parameter Degradation and Time-Zero Variability";
  Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2019 - 17.10.2019; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019) doi:10.1109/IIRW47491.2019.8989882.
  
  
• [CP-36] J. Scharlotta, G. Bersuker, S. E. Tyaginov, C. Young, G. Haase, G. Rzepa, M. Waltl, T. Chohan, S. Iyer, A. Kotov, C. Zambelli, F. Guarin, F. M. Puglisi, C. Ostermaier:
  "IIRW 2019 Discussion Group II: Reliability for Aerospace Applications";
  Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 13.10.2019 - 17.10.2019; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2019), 1 - 4 doi:10.1109/IIRW47491.2019.8989910.
  
  
• [CP-35] B. Stampfer, M. Simicic, P. Weckx, A. Abbasi, B. Kaczer, T. Grasser, M. Waltl:
  "Statistical Characterization of BTI and RTN using Integrated pMOS Arrays";
  Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 13.10.2019 - 17.10.2019; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), 1 - 5 doi:10.1109/IIRW47491.2019.8989904.
  
  
• [CP-34] D. Waldhoer, Y. Wimmer, A.-M. El-Sayed, W. Goes, M. Waltl, T. Grasser:
  "Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects";
  Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 13.10.2019 - 17.10.2019; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), 1 - 5 doi:10.1109/IIRW47491.2019.8989889.
  
  
• [CP-33] M. Waltl:
  "Characterization and Modeling of Single Charge Trapping in MOS Transistors";
  Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; (invited) 13.10.2019 - 17.10.2019; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), 1 - 9 doi:10.1109/IIRW47491.2019.8989880.
  
  
• [CP-32] V. Sverdlov, S. Selberherr:
  "CMOS Technology Compatible Magnetic Memories";
  Talk: International Symposium on Next-Generation Electronics (ISNE), Zhengzhou, China; (invited) 09.10.2019 - 10.10.2019; in "Proceedings of the International Symposium on Next Generation Electronics (ISNE)", (2019) doi:10.1109/ISNE.2019.8896421.
  
  
• [CP-31] Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, M. Vexler, N. S. Sokolov, T. Müller, T. Grasser:
  "CaF2 Insulators for Ultrascaled 2D Field Effect Transistors";
  Talk: Graphene Week, Helsinki, Finland; (invited) 23.09.2019 - 27.09.2019; (2019).
  
  
• [CP-30] S. Majumdar, M. Soikkeli, W. Kim, Yu. Illarionov, S. Wachter, D.K Polyushkin, S. Arpiainen, M. Prunnila:
  "Passivation controlled field effect mobility in 2D semiconductor based FET devices for high performance logic circuit development on flexible platform";
  Poster: Graphene Week, Helsinki, Finland; 23.09.2019 - 27.09.2019; (2019).
  
  
• [CP-29] A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, S. E. Tyaginov:
  "Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants";
  Talk: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 23.09.2019 - 26.09.2019; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2019), 262 - 265 doi:10.1109/ESSDERC.2019.8901721.
  
  
• [CP-28] R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
  "Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM";
  Talk: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 23.09.2019 - 26.09.2019; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2019), 146 - 149 doi:10.1109/ESSDERC.2019.8901780.
  
  
• [CP-27] H. Ceric, H. Zahedmanesh, K. Croes:
  "Analysis of Electromigration Failure of Nano-Interconnects through a Combination of Modeling and Experimental Methods";
  Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 23.09.2019 - 26.09.2019; (2019).
  
  
• [CP-26] L. Filipovic, S. Selberherr:
  "CMOS-Compatible Gas Sensors";
  Talk: International Conference on Microelectronics (MIEL), Nis, Serbia; (invited) 16.09.2019 - 18.09.2019; in "Proceedings of the IEEE International Conference on Microelectronics (MIEL)", (2019), 9 - 16 doi:10.1109/MIEL.2019.8889585.
  
  
• [CP-25] J. Ender, R. Orio, S. Fiorentini, W. Goes, V. Sverdlov:
  "Large-Scale Finite Element Micromagnetics Simulations using Open Source Software";
  Poster: European Materials Research Society (EMRS), Warsaw, Poland; 16.09.2019 - 19.09.2019; (2019).
  
  
• [CP-24] S. Fiorentini, R. Orio, W. Goes, J. Ender, V. Sverdlov:
  "Comprehensive Comparison of Switching Models for Perpendicular Spin Transfer Torque MRAM Cells";
  Poster: European Materials Research Society (EMRS), Warsaw, Poland; 16.09.2019 - 19.09.2019; (2019).
  
  
• [CP-23] M. Quell, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
  "Parallelized Construction of Extension Velocities for the Level-Set Method";
  Talk: International Conference on Parallel Processing and Applied Mathematics (PPAM), Bialystok, Poland; 08.09.2019 - 11.09.2019; in "Proceedings of the International Conference on Parallel Processing and Applied Mathematics (PPAM)", (2019), 42.
  
  
• [CP-22] L. Filipovic:
  "Modeling and Simulation of Atomic Layer Deposition";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), 323 - 326 doi:10.1109/SISPAD.2019.8870462.
  
  
• [CP-21] S. Fiorentini, R. Orio, W. Goes, J. Ender, V. Sverdlov:
  "Comprehensive Comparison of Switching Models for Perpendicular Spin-Transfer Torque MRAM Cells";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), 57 - 60 doi:10.1109/SISPAD.2019.8870359.
  
  
• [CP-20] X. Klemenschits, P. Manstetten, L. Filipovic, S. Selberherr:
  "Process Simulation in the Browser: Porting ViennaTS using WebAssembly";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), 339 - 342 doi:10.1109/SISPAD.2019.8870374.
  
  
• [CP-19] M. Quell, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub:
  "Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), 335 - 338 doi:10.1109/SISPAD.2019.8870482.
  
  
• [CP-18] A. Toifl, M. Quell, A. Hössinger, A. Babayan, S. Selberherr, J. Weinbub:
  "Novel Numerical Dissipation Scheme for Level-Set Based Anisotropic Etching Simulations";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), 327 - 330 doi:10.1109/SISPAD.2019.8870443.
  
  
• [CP-17] A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, S. E. Tyaginov:
  "Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs";
  Talk: International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan; 02.09.2019 - 05.09.2019; in "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2019), 609 - 610.
  
  
• [CP-16] M. Quell, G. Diamantopoulos, A. Hössinger, S. Selberherr, J. Weinbub:
  "Parallelized Bottom-Up Correction in Hierarchical Re-Distancing for Topography Simulation";
  Talk: High Performance Computing Conference (HPC), Borovets, Bulgaria; 02.09.2019 - 06.09.2019; in "Procedings of the High Performance Computing Conference (HPC)", (2019), 45.
  
  
• [CP-15] S. E. Tyaginov, A. Chasin, A. Makarov, A.-M. El-Sayed, M. Jech, A. De Keersgieter, G. Eneman, M. Vandemaele, J. Franco, D. Linten, B. Kaczer:
  "Physics-based Modeling of Hot-Carrier Degradation in Ge NWFETs";
  Talk: International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan; 02.09.2019 - 05.09.2019; in "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2019), 565 - 566.
  
  
• [CP-14] J. Weinbub, M. Nedjalkov:
  "Computational Strategies for Two-Dimensional Wigner Monte Carlo";
  Talk: High Performance Computing Conference (HPC), Borovets, Bulgaria; (invited) 02.09.2019 - 06.09.2019; in "Procedings of the High Performance Computing Conference (HPC)", (2019), 55 - 56.
  
  
• [CP-13] V. Sverdlov:
  "Spin-based Electronics: Recent Developments and Trends";
  Talk: International Conference on Modern Problems in the Physics of Surfaces and Nanostructures (ICMPSN), Yaroslavl, Russia; (invited) 26.08.2019 - 29.08.2019; in "Proceedings of the International Conference on Modern Problems in the Physics of Surfaces and Nanostructures (ICMPSN)", (2019), 7.
  
  
• [CP-12] R. Orio, S. Selberherr, V. Sverdlov:
  "Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques";
  Talk: SPIE Spintronics XII, San Diego, CA, USA; (invited) 11.08.2019 - 15.08.2019; in "Proceedings of SPIE", (2019).
  
  
• [CP-11] L.F. Aguinsky, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
  "An Extended Knudsen Diffusion Model for Aspect Ratio Dependent Atomic Layer Etching";
  Talk: International Workshop on Atomic Layer Etching (ALE), Bellevue, WA, USA; 21.07.2019 - 24.07.2019; in "Abstracts of the International Conference on Atomic Layer Deposition (ALD) Featuring the International Workshop on Atomic Layer Etching (ALE)", (2019), 109.
  
  
• [CP-10] V. Sverdlov, S. Selberherr:
  "Shot Noise in Magnetic Tunnel Junctions";
  Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, FL, USA; 06.07.2019 - 09.07.2019; in "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) Volume II", (2019), 19 - 22.
  
  
• [CP-9] V. Sverdlov, S. Selberherr:
  "Spin-Based CMOS-Compatible Memories";
  Talk: International Nanoelectronics Conference (INEC), Kuching, Malaysia; (invited) 03.07.2019 - 05.07.2019; in "Proceedings of the International Nanoelectronics Conferences (INEC)", (2019) doi:10.1109/INEC.2019.8853848.
  
  
• [CP-8] Yu. Illarionov, T. Grasser:
  "Reliability of 2D Field-Effect Transistors: from First Prototypes to Scalable Devices";
  Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hangzhou, China; (invited) 02.07.2019 - 05.07.2019; in "Proceedings of the International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)", (2019), 1 - 6 doi:10.1109/IPFA47161.2019.8984799.
  
  
• [CP-7] L. Gnam, P. Manstetten, M. Quell, K. Rupp, S. Selberherr, J. Weinbub:
  "A Flexible Shared-Memory Parallel Mesh Adaptation Framework";
  Talk: International Conference on Computational Science and Its Applications (ICCSA), Saint Petersburg, Russia; 01.07.2019 - 04.07.2019; in "Proceedings of the International Conference on Computational Science and Its Applications (ICCSA)", (2019), 158 - 165 doi:10.1109/ICCSA.2019.00016.
  
  
• [CP-6] Yu. Illarionov, A. Banshchikov, M. Vexler, D.K Polyushkin, S. Wachter, M. Thesberg, N. S. Sokolov, T. Mueller, T. Grasser:
  "Epitaxial CaF2: a Route towards Scalable 2D Electronics";
  Poster: International Conference on Physics of 2D Crystals (ICP2DC4), Hangzhou, China; 10.06.2019 - 15.06.2019; in "Proceedings of the International Conference on Physics of 2D Crystals (ICP2DC4)", (2019), 69.
  
  
• [CP-5] H. Ceric, H. Zahedmanesh:
  "Advanced Modeling and Simulation of Cu Nano-Interconnects Reliability";
  Poster: International Interconnect Technology Conference (IITC), Brussels, Belgium; 03.06.2019 - 06.06.2019; in "Proceedings of the International Interconnect Technology Conference (IITC)", (2019).
  
  
• [CP-4] R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
  "Efficient Magnetic Field Free Switching of Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM";
  Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, France; 01.04.2019 - 03.04.2019; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EU!ROSOI-ULIS)", (2019), 152 - 153.
  
  
• [CP-3] B. O´Sullivan, R. Ritzenthaler, G. Rzepa, Z. Wu, E. D. Litta, O. Richard, T. Conard, V. Machkaoutsan, P. Fazan, C. Kim, J. Franco, B. Kaczer, T. Grasser, A. Spessot, D. Linten, N. Horiguchi:
  "Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-κ/Metal Gate Devices";
  Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 31.03.2019 - 04.04.2019; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), 1 - 8 doi:10.1109/IRPS.2019.8720598.
  
  
• [CP-2] Z. Wu, J. Franco, D. Claes, G. Rzepa, P. Roussel, N. Collaert, G Groeseneken, D. Linten, T. Grasser, B. Kaczer:
  "Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling";
  Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 31.03.2019 - 04.04.2019; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), 1 - 7 doi:10.1109/IRPS.2019.8720541.
  
  
• [CP-1] J. Franco, Z. Wu, G. Rzepa, A. Vandooren, H. Arimura, D. Claes, N. Horiguchi, N. Collaert, D. Linten, T. Grasser, B. Kaczer:
  "Low Thermal Budget Dual-Dipole Gate Stacks Engineered for Sufficient BTI Reliability in Novel Integration Schemes";
  Talk: Electron Devices Technology and Manufacturing Conference (EDTM), Singapore; (invited) 12.03.2019 - 15.03.2019; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2019), 215 - 217 doi:10.1109/EDTM.2019.8731237.
  
  

• [TH-2] L. Filipovic:
  "Semiconductor Based Integrated Sensors";
  TU Wien, Fakultät für Elektrotechnik und Informationstechnik, (2020).
  
  
• [TH-1] J. Weinbub:
  "High Performance Simulation of Microelectronic Devices with Nanometer Dimensions";
  TU Wien, Fakultät für Elektrotechnik und Informationstechnik, (2019).
  
  

• [DT-1] L. Gnam:
  "High Performance Mesh Adaptation for Technology Computer Aided Design";
  Reviewer: J. Weinbub, J. Schöberl, N. Hitschfeld Kahler; Institut für Mikroelektronik, 2020, oral examination: 24.03.2020.
  
  

• [MT-1] F. Pöppl:
  "Analysis and Optimization of Nested Meshes for Adaptive Mesh Refinement";
  Supervisor: J. Weinbub, M. Quell; Institut für Mikroelektronik, 2020, final examination: 17.06.2020.