[V48] S. Wagner, T. Grasser, S. Selberherr:
"Mixed-Mode Device and Circuit Simulation";
Presentation: Internationale Photonics Conference, Szczecin, Poland (invited); 06-24-2004 - 06-26-2004; in: "Proceedings of the 11th International Conference Mixed Design of Integrated Circuits and Systems MIXDES", (2004), 83-919289-7-7; 36 - 41.

[V47] V. Palankovski, S. Selberherr:
"Analysis of High Speed Heterostructure Devices";
Presentation: International Conference on Microelectronics (MIEL), Nis (invited); 05-16-2004 - 05-19-2004; in: "Proc. 24th International Conference on Microelectronics Vol 1", (2004), 0-7803-8166-1; 115 - 122.

[V46] A. Sheikholeslami, C. Heitzinger, T. Grasser, S. Selberherr:
"Three-Dimensional Topography Simulation for Deposition and Etching Processes Using a Level Set Method";
Presentation: International Conference on Microelectronics (MIEL), Nis; 05-16-2004 - 05-19-2004; in: "Proc. 24th International Conference on Microelectronics Vol 1", (2004), 0-7803-8166-1; 241 - 244.

[V45] R. Entner, A. Gehring, T. Grasser, S. Selberherr:
"A Comparison of Quantum Correction Models for the Three-Dimensional Simulation of FinFET Structures";
Poster: Intl. Spring Seminar on Electronics Technology, Sofia; 05-13-2004 - 05-16-2004; in: "Proc. IEEE Intl. Spring Seminar on Electronics Technology", (2004), 0-7803-8422-9; 19 - 20.

[V44] R. Kosik, T. Grasser, K. Dragosits:
"On the Highest Order Moment Closure Problem";
Poster: Intl. Spring Seminar on Electronics Technology, Sofia; 05-13-2004 - 05-16-2004; in: "Proc. IEEE Intl. Spring Seminar on Electronics Technology", (2004), 0-7803-8422-9; 20.

[V43] V. Palankovski, S. Selberherr:
"Numerical Simulation of Selected Semiconductor Devices";
Presentation: Intl. Spring Seminar on Electronics Technology, Sofia; 05-13-2004 - 05-16-2004; in: "Proc. IEEE Intl. Spring Seminar on Electronics Technology", (2004), 0-7803-8422-9; 21.

[V42] A. Sheikholeslami, C. Heitzinger, F. Badrieh, H. Puchner, S. Selberherr:
"Three-Dimensional Topography Simulation Based on a Level Set Method";
Presentation: Intl. Spring Seminar on Electronics Technology, Sofia; 05-13-2004 - 05-16-2004; in: "Proc. IEEE Intl. Spring Seminar on Electronics Technology", (2004), 0-7803-8422-9; 47.

[V41] S. Holzer, A. Sheikholeslami, S. Wagner, C. Heitzinger, T. Grasser, S. Selberherr:
"Optimization and Inverse Modeling for TCAD Applications";
Presentation: SNDT 2004, Symposium on Nano Device Technology 2004, Hsinchu, Taiwan; 05-12-2004 - 05-13-2004; in: "SNDT 2004, Symposium on Nano Device Technology 2004", (2004), 113 - 116.

[V40] H. Kosina, V. Palankovski:
"Mobility Enhancement in Strained CMOS Devices";
Presentation: SNDT 2004, Symposium on Nano Device Technology 2004, Hsinchu, Taiwan (invited); 05-12-2004 - 05-13-2004; in: "SNDT 2004, Symposium on Nano Device Technology 2004", (2004), 101 - 105.

[V39] E. Ungersböck, M Pourfath, A. Gehring, H. Kosina, B.-H. Cheong, S. Selberherr:
"Optimization of Carbon Nanotube Field Effect Transistors";
Presentation: SNDT 2004, Symposium on Nano Device Technology 2004, Hsinchu, Taiwan; 05-12-2004 - 05-13-2004; in: "SNDT 2004, Symposium on Nano Device Technology 2004", (2004), 117 - 120.

[V38] C. Heitzinger, A. Sheikholeslami, J. Fugger, O. Häberlen, M. Leicht, S. Selberherr:
"A Case Study in Predictive Three-Dimensional Topography Simulation Based on a Level-Set Algorithm";
Presentation: Meeting of the Electrochemical Society, San Antonio, TX; 05-09-2004 - 05-13-2004; in: "Proc. 205th Meeting of the Electrochemical Society (ECS)", (2004).

[V37] V. Palankovski, S. Selberherr:
"Rigorous Modeling of High-Speed Semiconductor Devices";
Presentation: Conf. on Electron Device and Sold-State Circuits, Hong Kong (invited); 12-16-2003 - 12-18-2003; in: "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2003), 0-7803-7749-4; 127 - 132.

[V36] V. Palankovski, S. Selberherr:
"Challenges in Modeling of High-Speed Electron Devices";
Presentation: Intl. Workshop on the Physics of Semiconductor Devices, Madras (invited); 12-16-2003 - 12-20-2003; in: "Proc. 12th Intl. Workshop on Physics of Semiconductor Devices", (2003), 81-7319-567-6; 45 - 50

[V35] E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, B.-H. Cheong, W. B. Choi:
"Analysis of Carrier Transport in Carbon Nanotube FET Devices";
Presentation: Intl. Workshop on the Physics of Semiconductor Devices, Madras; 12-16-2003 - 12-20-2003; in: "Proc. Intl. Workhop on Physics of Semiconductor Devices", (2003), 81-7319-567-6; 1059 - 1061.

[V34] S. Wagner, V. Palankovski, R. Quay, T. Grasser, S. Selberherr:
"Numerical Simulation of High-Speed High-Breakdown Indium Phosphide HBTs ";
Presentation: Intl. Workshop on the Physics of Semiconductor Devices, Madras; 12-16-2003 - 12-20-2003; in: "Proc. 12th Intl. Workshop on The Physics of Semiconductor Devices", (2003), 81-7319-567-6; 836 - 838.

[V33] T. Grasser:
"Closure Relations for Macroscopic Transport Models";
Presentation: Intl.Semiconductor Device Research Symposium, Washington (invited); 12-10-2003 - 12-12-2003; in: "Proc. Intl. Semiconductor Device Research Symp.", (2003), 0-7803-8139-4; 504 - 505.

[V32] V. Palankovski, S. Wagner, S. Selberherr:
"Numerical Analysis of Compound Semiconductor RF Devices";
Presentation: GaAs IC Symposium, San Diego (invited); 11-09-2003 - 11-12-2003; in: "Proceedings GaAs IC Symposium", (2003), 0-7803-7833-4; 107 - 110

[V31] S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"A Generally Applicable Approach for Advanced Equation Assembling";
Presentation: International Conference on Software Engineering and Applications, Marina del Rey, CA; 11-03-2003 - 11-05-2003; in: "Proceedings of the 7th IASTED International Conference on Software Engineering and Applications (SEA) ", (2003), 088-9863-94-6; 494 - 499.

[V30] S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"Advanced Equation Assembling Techniques for Numerical Simulators";
Presentation: European Simulation and Modeling Conference, Naples; 10-27-2003 - 10-29-2003; in: "Proceedings of the 2003 European Simulation and Modeling Conference", (2003), 90-77381-04-X; 390 - 394.

[V29] S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"A Simulator Module for Advanced Equation Assembling";
Presentation: ESS Conf., Delft; 10-26-2003 - 10-29-2003; in: "Proceedings of the 15th European Simulation Symposium and Exhibition", (2003), 3-936150-28-1; 55 - 64.

[V28] W. Wessner, H. Ceric, C. Heitzinger, A. Hössinger, S. Selberherr:
"Anisotropic Mesh Adaption Governed by a Hessian Matrix Metric";
Presentation: ESS Conf., Delft; 10-26-2003 - 10-29-2003; in: "Proceedings of the 15th European Simulation Symposium and Exhibition", (2003), 3-936150-28-1; 41 - 46.

[V27] R. Wittmann, A. Hössinger, S. Selberherr:
"Improvement of the Statistical Accuracy for the Three-Dimensional Monte Carlo Simulation of Ion Implantation";
Presentation: European Simulation Symposium, Delft; 10-26-2003 - 10-29-2003; in: "Proc. 15th European Simulation Symposium", (2003), 3-936150-28-1; 35 - 40.

[V26] F. Jimenez-Molinos, A. Palma, A. Gehring, F. Gamiz, H. Kosina, S. Selberherr:
"Static and Transient Simulation of Inelastic Trap-Assisted Tunneling";
Presentation: Workshop on Modeling and Simulation of Electron Devices, Barcelona; 10-16-2003 - 10-17-2003; in: "Proc. MSED", (2003), 84-688-1314-1; 65 - 68.

[V25] C. Heitzinger, A. Sheikholeslami, F. Badrieh, H. Puchner, S. Selberherr:
"Feature Scale Simulation of Advanced Etching Processes";
Presentation: Meeting of the Electrochemical Society, Orlando; 10-12-2003 - 10-16-2003; in: "Proc. 204th Meeting of the Electrochemical Society (ECS)", (2003), 1-56677-398-9; 1259.

[V24] J. Cervenka, A. Hössinger, R. Minixhofer, T. Grasser, S. Selberherr:
"Dreidimensionale Modellierung Elektronischer Bauelemente";
Poster: ME 03 - Informationstagung Mikroelektronik, Wien; 10-01-2003 - 10-02-2003; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), 3-85133-030-7; 377 - 382.

[V23] A. Sheikholeslami, C. Heitzinger, S. Selberherr, F. Badrieh, H. Puchner:
"Capacitances in the Backend of a 100nm CMOS Process and their Predictive Simulation";
Poster: ME 03 - Informationstagung Mikroelektronik, Wien; 10-01-2003 - 10-02-2003; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), 3-85133-030-7; 481 - 486.

[V22] S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr:
"Numerische Berechnung von Silizium-Germanium Heterostruktur-Bipolartransistoren";
Poster: ME 03 - Informationstagung Mikroelektronik, Wien; 10-01-2003 - 10-02-2003; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), 3-85133-030-7; 383 - 388.

[V21] W. Wessner, A. Hössinger, S. Selberherr:
"Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation";
Poster: ME 03 - Informationstagung Mikroelektronik, Wien; 10-01-2003 - 10-02-2003; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), 3-85133-030-7; 523 - 528.

[V20] S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
"Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Structures";
Presentation: THERMINIC Workshop, Aix-en-Provence; 09-24-2003 - 09-26-2003; in: "Proceedings 9th THERMINIC Workshop", (2003), 2-848-130202; 263 - 268.

[V19] T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr:
"Silicon Carbide Accumulation-Mode Laterally Diffused MOSFET";
Poster: ESSDERC, Estoril; 09-16-2003 - 09-18-2003; in: "Proceedings ESSDERC 2003", (2003), 0-7803-7999-3; 581 - 584.

[V18] F. Badrieh, H. Puchner, C. Heitzinger, A. Sheikholeslami, S. Selberherr:
"From Feature Scale Simulation to Backend Simulation for a 100nm CMOS Process";
Poster: ESSDERC, Estoril; 09-16-2003 - 09-18-2003; in: "Proceedings ESSDERC 2003", (2003), 0-7803-7999-3; 441 - 444.

[V17] A. Gehring, S. Harasek, E. Bertagnolli, S. Selberherr:
"Evaluation of ZrO2 Gate Dielectrics for Advanced CMOS Devices";
Poster: ESSDERC, Estoril; 09-16-2003 - 09-18-2003; in: "Proceedings ESSDERC 2003", (2003), 0-7803-7999-3; 473 - 476.

[V15] C. Heitzinger, A. Sheikholeslami, J.M. Park, S. Selberherr:
"A Method for Generating Structurally Aligned High Quality Grids and its Application to the Simulation of a Trench Gate MOSFET";
Poster: ESSDERC, Estoril; 09-16-2003 - 09-18-2003; in: "Proceedings ESSDERC 2003", (2003), 0-7803-7999-3; 457 - 460.

[V15] Ch. Hollauer, H. Ceric, S. Selberherr:
"Simulation of Thermal Oxidation: A Three-Dimensional Finite Element Approach";
Presentation: ESSDERC, Estoril; 09-16-2003 - 09-18-2003; in: "Proceedings ESSDERC 2003", (2003), 0-7803-7999-3; 383 - 386.

[V14] R. Minixhofer, S. Holzer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
"Optimization of Electrothermal Material Parameters using Inverse Modeling";
Presentation: ESSDERC, Estoril; 09-16-2003 - 09-18-2003; in: "Proceedings ESSDERC 2003", (2003), 0-7803-7999-3; 363 - 366.

[V13] E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, B.-H. Cheong, W. B. Choi:
"Simulation of Carrier Transport in Carbon Nanotube Field Effect Transistors";
Presentation: ESSDERC, Estoril; 09-16-2003 - 09-18-2003; in: "Proceedings ESSDERC 2003", (2003), 0-7803-7999-3; 411 - 414.

[V12] T.V. Gurov, M. Nedjalkov, H. Kosina:
"Novel Monte Carlo Algorithms for Ultrafast Transport Phenomena in Semiconductors";
Presentation: Seminar on Monte Carlo Methods, Berlin; 09-15-2003 - 09-19-2003; in: "Book of Abstracts MCM-2003", (2003), 10.

[V11] H. Kosina, M. Nedjalkov, S. Selberherr:
"Solution of the Space-dependent Wigner Equation Using a Particle Model ";
Presentation: Seminar on Monte Carlo Methods, Berlin; 09-15-2003 - 09-19-2003; in: "Book of Abstracts MCM-2003", (2003), 6.

[V10] M. Nedjalkov, E. Atanassov, H. Kosina, S. Selberherr:
"Operator-Split Method for Variance Reduction in Stochastic Solutions of the Wigner Equation";
Presentation: Seminar on Monte Carlo Methods, Berlin; 09-15-2003 - 09-19-2003; in: "Book of Abstracts MCM-2003", (2003), 6

[V9] T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr:
"Modeling and Simulation of SiC MOSFETs";
Presentation: IASTED Intl. Conf. on Applied Modelling and Simulation, Marbella; 09-03-2003 - 09-05-2003; in: "Proceedings IASTED", (2003), 0-88986-384-9; 552 - 556.

[V8] K. Dragosits, V. Palankovski, S. Selberherr:
"Mobility Modeling in Presence of Quantum Effects";
Poster: SISPAD, Boston; 09-03-2003 - 09-05-2003; in: "2003 Intl. Conf. on Simulation of Semiconductor Processes and Devices", (2003), 0-7803-7826-1; 271 - 274.

[V7] T. Grasser, H. Kosina, S. Selberherr:
"Reformulation of Macroscopic Transport Models Based on the Moments of the Scattering Integral";
Presentation: SISPAD, Boston; 09-03-2003 - 09-05-2003; in: "2003 Intl. Conf. on Simulation of Semiconductor Processes and Devices", (2003), 0-7803-7826-1; 63 - 66.

[V6] A. Hössinger, J. Cervenka, S. Selberherr:
"A Multistage Smoothing Algorithm for Coupling Cellular and Polygonal Datastructures";
Poster: SISPAD, Boston; 09-03-2003 - 09-05-2003; in: "2003 Intl. Conf. on Simulation of Semiconductor Processes and Devices", (2003), 0-7803-7826-1; 259 - 262.

[V5] H. Kosina, G. Klimeck, M. Nedjalkov, S. Selberherr:
"Comparison of Numerical Quantum Device Models";
Presentation: SISPAD, Boston; 09-03-2003 - 09-05-2003; in: "2003 Intl. Conf. on Simulation of Semiconductor Processes and Devices", (2003), 0-7803-7826-1; 171 - 174.

[V4] S. Smirnov, H. Kosina, S. Selberherr:
"Substrate Orientation-Dependence of Electron Mobility in Strained SiGe Layers";
Presentation: SISPAD, Boston; 09-03-2003 - 09-05-2003; in: "2003 Intl. Conf. on Simulation of Semiconductor Processes and Devices", (2003), 0-7803-7826-1; 55 - 58.


[V3] W. Wessner, C. Heitzinger, A. Hössinger, S. Selberherr:
"Error Estimated Driven Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation";
Presentation: SISPAD, Boston; 09-03-2003 - 09-05-2003; in: "2003 Intl. Conf. on Simulation of Semiconductor Processes and Devices", (2003), 0-7803-7826-1; 109 - 112.

[V2] M. Nedjalkov, H. Kosina, S. Selberherr:
"A Quasi-Particle Model of the Electron - Wigner Potential Interaction";
Poster: International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Modena; 07-28-2003 - 08-01-2003; in: "Proceedings HCIS-13", (2003), Th 5-1.

[V1] V. Palankovski, S. Selberherr:
"Modeling High Speed Semiconductor Devices of Modern Communication Systems";
Presentation: World Multiconference on Systemics, Cybernetics and Informatics, Orlando; 07-27-2003 - 07-30-2003; in: "Proc. 7th World Multiconference on Systemics, Cybernetics and Informatics", (2003), 980-6560-01-9; 97 - 102.

[P28] T. Grasser, H. Kosina, S. Selberherr:
"Hot Carrier Effects within Macroscopic Transport Models";
in: "Advanced Device Modeling and Simulation", World Scientific Publishing Co., 2003, (invited), 9-812-38607-6, 173 - 201.

[P27] H. Kosina, M. Nedjalkov:
"Particle Models for Device Simulation";
in: "Advanced Device Modeling and Simulation", T. Grasser (ed.); World Scientific Publishing Co., Singapore, 2003, (invited), 9-812-38607-6, 27 - 69.

[P26] H. Kosina, M. Nedjalkov, S. Selberherr:
"A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation";
in: "Large-Scale Scientific Computing", I. Lirkov, S. Margenov, J. Wasniewski, P. Yalamov (ed.); Springer-Verlag, 2003, 3-540-21090-3, 170 - 177.

[P25] M. Nedjalkov, H. Kosina, S. Selberherr:
"A Weight Decomposition Approach to the Sign Problem in Wigner Transport Simulations";
in: "Large-Scale Scientific Computing", I. Lirkov, S. Margenov, J. Wasniewski, P. Yalamov (ed.); Springer-Verlag, 2003, 3-540-21090-3, 178 - 184.

[P24] S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr:
"A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle";
in: "Large-Scale Scientific Computing", I. Lirkov, S. Margenov, J. Wasniewski, P. Yalamov (ed.); Springer-Verlag, 2003, 3-540-21090-3, 185 - 193.

[P23] T. Binder, C. Heitzinger, S. Selberherr:
"A Study on Global and Local Optimization Techniques for TCAD Analysis Tasks";
IEEE Trans. Computer-Aided Design of Integrated Circuits and Systems, 23 (2004), 6; 814 - 822.

[P22] C. Heitzinger, A. Hössinger, S. Selberherr:
"An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
Mathematics and Computers in Simulation, 66 (2004), 2-3; 219 - 230.

[P21] C. Heitzinger, Ch. Ringhofer:
"A Note on the Symplectic Integration of the Nonlinear Schrödinger Equation";
J.Computational Electronics, 3 (2004), 1; 33 - 44.

[P20] C. Heitzinger, S. Selberherr:
"On the Simulation of the Formation and Dissolution of Silicon Self-Interstitial Clusters and the Corresponding Inverse Modeling Problem";
Microelectronics Journal, 35 (2004), 2; 167 - 171.

[P19] J.M. Park, R. Klima, S. Selberherr:
"High-Voltage Lateral Trench Gate SOI-LDMOSFETs";
Microelectronics Journal, 35 (2004), 3; 299 - 304.

[P18] M. Nedjalkov, H. Kosina, E. Ungersböck, S. Selberherr:
"A Quasi-Particle Model of the Electron Wigner Potential Interaction";
Semiconductor, Science and Technology, 19 (2004), 226 - 228.

[P17] V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
"Rigorous Modeling Approach to Numerical Simulation of SiGe HBTs";
Applied Surface Science, 224 (2004), 1-4; 361 - 364.

[P16] V. Palankovski, S. Selberherr:
"The State-of-the-Art in Simulation for Optimization of SiGe-HBTs";
Applied Surface Science, 224 (2004), 1-4; 312 - 319.

[15] S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr:
"Direct Extraction Feature for Scattering Parameters of SiGe-HBTs"";
Applied Surface Science, 224 (2004), 1-4; 365 - 369.

[P14] V. Palankovski, S. Selberherr:
"Critical Modeling Issues of SiGe Semiconductor Devices";
Journal of Telecommunications and Information Technology (invited), 1 (2004), 15 - 25.

[P13] V. Palankovski, S. Selberherr:
"Rigorous Modeling of High-Speed Semiconductor Devices";
Microelectronics Reliability (invited), 44 (2004), 6; 889 - 897.

[P12] J.M. Park, S. Wagner, T. Grasser, S. Selberherr:
"New SOI Lateral Power Devices with Trench Oxide";
Solid-State Electronics, 48 (2004), 6; 1007 - 1015.

[P11] S. Smirnov, H. Kosina:
"Monte Carlo modeling of the electron mobility in strained Si_1-xGe_x layers on arbitrarily oriented Si_1-yGe_y substrates";
Solid-State Electronics (invited), 48 (2004), 1325 - 1335.

[P10] T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr:
"Improving SiC Lateral DMOSFET Reliability under High Field Stress";
Microelectronics Reliability, 43 (2003), 9-11; 1889 - 1894.

[P9] A. Gehring, F. Jimenez-Molinos, H. Kosina, A. Palma, F. Gamiz, S. Selberherr:
" Modeling of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM Devices";
Microelectronics Reliability, 43 (2003), 9-11; 1495 - 1500.

[P8] V. M. Borzdov, V. O. Galenchik, H. Kosina, F. F. Komarov, O. G. Zhevnyak:
"Monte Carlo Study of the Relative Frequency of Scattering Processes in Si-Inversion Layers";
Physics of Low-dimensional Structures, 5-6 (2003), 99 - 108.

[P7] A. Gehring, H. Kosina, S. Selberherr:
"Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method";
J.Computational Electronics, 2 (2003), 2-4; 219 - 223.

[P6] H. Kosina, M. Nedjalkov, S. Selberherr:
" A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations";
J.Computational Electronics, 2 (2003), 2-4; 147 - 151.

[P5]] C. Heitzinger, A. Hössinger, S. Selberherr:
"On Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
IEEE Trans. Computer-Aided Design, 22 (2003), 7; 879 - 883.

[P4] T. Binder, A. Hössinger, S. Selberherr:
" Rigorous Integration of Semiconductor Process and Device Simulators";
IEEE Trans. Computer-Aided Design, 22 (2003), 9; 1204 - 1214.

[P3] H. Kosina, M. Nedjalkov:
"Particle Models for Device Simulation";
International Journal of High Speed Electronics and Systems (invited), 13 (2003), 13; 727 - 769.

[P2] T. Grasser, H. Kosina, S. Selberherr:
" Hot Carrier Effects within Macroscopic Transport Models";
International Journal of High Speed Electronics and Systems (invited), 13 (2003), 3; 873 - 901.

[P1] S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr:
"Monte Carlo Method for Modeling of Small Signal Response Including the Pauli Exclusion Principle";
Journal of Applied Physics, 94 (2003), 9; 5791 - 5799.