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Publications Wolfgang Gös

168 records

Publications in Scientific Journals

34.   Bendra, M., Fiorentini, S., Selberherr, S., Gös, W., Sverdlov, V. (2023).
A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping.
Solid-State Electronics, 208, Article 108738. https://doi.org/10.1016/j.sse.2023.108738 (reposiTUm)

33.   Fiorentini, S., Ender, J., Selberherr, S., Lacerda de Orio, R., Goes, W., Sverdlov, V. (2023).
Comprehensive Evaluation of Torques in Ultra-Scaled MRAM Devices.
Solid-State Electronics, 199, Article 108491. https://doi.org/10.1016/j.sse.2022.108491 (reposiTUm)

32.   Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2023).
The Influence of Interface Effects on the Switching Behavior in Ultra-Scaled MRAM Cells.
Solid-State Electronics, 201, Article 108590. https://doi.org/10.1016/j.sse.2023.108590 (reposiTUm)

31.   Loch, W. J., Fiorentini, S., Jørstad, N. P., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Double Reference Layer STT-MRAM Structures With Improved Performance.
Solid-State Electronics, 194(108335), Article 108335. https://doi.org/10.1016/j.sse.2022.108335 (reposiTUm)

30.   Jørstad, N. P., Fiorentini, S., Loch, W. J., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Finite Element Modeling of Spin-Orbit Torques.
Solid-State Electronics, 194, Article 108323. https://doi.org/10.1016/j.sse.2022.108323 (reposiTUm)

29.   Ender, J., Lacerda de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2022).
Reinforcement Learning to Reduce Failures in SOT-MRAM Switching.
Microelectronics Reliability, 135(114570), 114570. https://doi.org/10.1016/j.microrel.2022.114570 (reposiTUm)

28.   Fiorentini, S., Ender, J., Selberherr, S., Goes, W., Sverdlov, V. (2022).
Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach.
Journal on Systemics, Cybernetics and Informatics, 20(4), 40–44. https://doi.org/10.54808/JSCI.20.04.40 (reposiTUm)

27.   Fiorentini, S., Bendra, M., Ender, J., Lacerda de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Spin and Charge Drift-Diffusion in Ultra-Scaled MRAM Cells.
Scientific Reports, 12, Article 20958. https://doi.org/10.1038/s41598-022-25586-4 (reposiTUm)

26.   Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2022).
The Influence of Interface Effects on the Switching Behavior in Ultra-Scaled MRAM Cells.
Solid-State Electronics, 201, Article 108590. https://doi.org/10.1016/j.sse.2023.108590 (reposiTUm)

25.   Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Waltl, M., Grasser, T. (2021).
Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory.
IEEE Transactions on Electron Devices, 68(12), 6365–6371. https://doi.org/10.1109/ted.2021.3116931 (reposiTUm)

24.   Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021).
Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental.
IEEE Transactions on Electron Devices, 68(12), 6372–6378. https://doi.org/10.1109/ted.2021.3117740 (reposiTUm)

23.   Ender, J., Fiorentini, S., De Orio, R. L., Goes, W., Sverdlov, V., Selberherr, S. (2021).
Emerging CMOS Compatible Magnetic Memories and Logic.
IEEE Journal of the Electron Devices Society, 9, 456–463. https://doi.org/10.1109/jeds.2021.3066679 (reposiTUm)

22.   Ender, J., Lacerda de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning.
Microelectronics Reliability, 126, 1–5. https://doi.org/10.1016/j.microrel.2021.114231 (reposiTUm)

21.  R. Orio, J. Ender, S. Fiorentini, W. Gös, S. Selberherr, V. Sverdlov:
"Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell";
IEEE Journal of the Electron Devices Society, 9 (2021), 61 - 67. https://doi.org/10.1109/JEDS.2020.3039544

20.   de Orio, R. L., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2021).
Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning.
Micromachines, 12(4), 443. https://doi.org/10.3390/mi12040443 (reposiTUm)

19.   Goes, W., Wimmer, Y., El-Sayed, A.-M., Rzepa, G., Jech, M., Shluger, A. L., Grasser, T. (2018).
Identification of Oxide Defects in Semiconductor Devices: A Systematic Approach Linking DFT to Rate Equations and Experimental Evidence.
Microelectronics Reliability, 87, 286–320. https://doi.org/10.1016/j.microrel.2017.12.021 (reposiTUm)

18.   Waltl, M., Rzepa, G., Grill, A., Goes, W., Franco, J., Kaczer, B., Witters, L., Mitard, J., Horiguchi, N., Grasser, T. (2017).
Superior NBTI in High-K SiGe Transistors - Part I: Experimental.
IEEE Transactions on Electron Devices, 64(5), 2092–2098. https://doi.org/10.1109/ted.2017.2686086 (reposiTUm)

17.   Waltl, M., Rzepa, G., Grill, A., Goes, W., Franco, J., Kaczer, B., Witters, L., Mitard, J., Horiguchi, N., Grasser, T. (2017).
Superior NBTI in High-K SiGe Transistors - Part II: Theory.
IEEE Transactions on Electron Devices, 64(5), 2099–2105. https://doi.org/10.1109/ted.2017.2686454 (reposiTUm)

16.   Wimmer, Y., El-Sayed, A.-M., Gös, W., Grasser, T., Shluger, A. L. (2016).
Role of Hydrogen in Volatile Behaviour of Defects in SiO₂-based Electronic Devices.
Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, 472(2190). https://doi.org/10.1098/rspa.2016.0009 (reposiTUm)

15.   Kaczer, B., Franco, J., Weckx, P., Roussel, Ph. J., Simicic, M., Putcha, V., Bury, E., Cho, M., Degraeve, R., Linten, D., Groeseneken, G., Debacker, P., Parvais, B., Raghavan, P., Catthoor, F., Rzepa, G., Waltl, M., Goes, W., Grasser, T. (2016).
The Defect-Centric Perspective of Device and Circuit Reliability - From Gate Oxide Defects to Circuits.
Solid-State Electronics, 125, 52–62. https://doi.org/10.1016/j.sse.2016.07.010 (reposiTUm)

14.   El-Sayed, A.-M., Wimmer, Y., Goes, W., Grasser, T., Afanas’ev, V. V., Shluger, A. L. (2015).
Theoretical Models of Hydrogen-Induced Defects in Amorphous Silicon Dioxide.
Physical Review B, 92(014107). https://doi.org/10.1103/physrevb.92.014107 (reposiTUm)

13.   Kaczer, B., Toledano-Luque, M., Goes, W., Grasser, T., Groeseneken, G. (2013).
Gate Current Random Telegraph Noise and Single Defect Conduction.
Microelectronic Engineering, 109, 123–125. https://doi.org/10.1016/j.mee.2013.03.110 (reposiTUm)

12.   Goes, W., Schanovsky, F., Reisinger, H., Kaczer, B., Grasser, T. (2011).
Bistable Defects as the Cause for NBTI and RTN.
Solid State Phenomena, 178–179, 473–482. https://doi.org/10.4028/www.scientific.net/ssp.178-179.473 (reposiTUm)

11.   Schanovsky, F., Gös, W., Grasser, T. (2011).
Multiphonon Hole Trapping From First Principles.
Journal of Vacuum Science, Technology B, 29(1), 01A201. https://doi.org/10.1116/1.3533269 (reposiTUm)

10.   Grasser, T., Kaczer, B., Gös, W., Reisinger, H., Aichinger, T., Hehenberger, P. P., Wagner, P.-J., Schanovsky, F., Franco, J., Toledano-Luque, M., Nelhiebel, M. (2011).
The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps.
IEEE Transactions on Electron Devices, 58(11), 3652–3666. https://doi.org/10.1109/ted.2011.2164543 (reposiTUm)

9.   Schanovsky, F., Gös, W., Grasser, T. (2010).
An Advanced Description of Oxide Traps in MOS Transistors and Its Relation to DFT.
Journal of Computational Electronics, 9(3–4), 135–140. https://doi.org/10.1007/s10825-010-0323-x (reposiTUm)

8.   Tyaginov, S., Sverdlov, V., Starkov, I., Gös, W., Grasser, T. (2009).
Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate.
Microelectronics Reliability, 49(9–11), 998–1002. https://doi.org/10.1016/j.microrel.2009.06.018 (reposiTUm)

7.   Grasser, T., Kaczer, B., Gös, W., Aichinger, T., Hehenberger, P. P., Nelhiebel, M. (2009).
Understanding Negative Bias Temperature Instability in the Context of Hole Trapping.
Microelectronic Engineering, 86(7–9), 1876–1882. (reposiTUm)

6.   Grasser, T., Wagner, P.-Jü., Hehenberger, P., Goes, W., Kaczer, B. (2008).
A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability.
IEEE Transactions on Device and Materials Reliability, 8(3), 526–535. https://doi.org/10.1109/tdmr.2008.2002353 (reposiTUm)

5.   Goes, W., Karner, M., Sverdlov, V., Grasser, T. (2008).
Charging and Discharging of Oxide Defects in Reliability Issues.
IEEE Transactions on Device and Materials Reliability, 8(3), 491–500. https://doi.org/10.1109/tdmr.2008.2005247 (reposiTUm)

4.   Grasser, T., Gös, W., Kaczer, B. (2008).
Dispersive Transport and Negative Bias Temperature Instability: Boundary Conditions, Initial Conditions, and Transport Models.
IEEE Transactions on Device and Materials Reliability, 8(1), 79–97. https://doi.org/10.1109/tdmr.2007.912779 (reposiTUm)

3.   Ungersboeck, E., Gös, W., Dhar, S., Kosina, H., Selberherr, S. (2008).
The Effect of Uniaxial Stress on Band Structure and Electron Mobility of Silicon.
Mathematics and Computers in Simulation, 79(4), 1071–1077. https://doi.org/10.1016/j.matcom.2007.10.004 (reposiTUm)

2.   Karner, M., Gehring, A., Holzer, S., Pourfath, M., Wagner, M., Goes, W., Vasicek, M., Baumgartner, O., Kernstock, C., Schnass, K., Zeiler, G., Grasser, T., Kosina, H., Selberherr, S. (2007).
A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications.
Journal of Computational Electronics, 6(1–3), 179–182. https://doi.org/10.1007/s10825-006-0077-7 (reposiTUm)

1.   Karner, M., Gehring, A., Wagner, M., Entner, R., Holzer, S., Goes, W., Vasicek, M., Grasser, T., Kosina, H., Selberherr, S. (2007).
VSP - A Gate Stack Analyzer.
Microelectronics Reliability, 47(4–5), 704–708. https://doi.org/10.1016/j.microrel.2007.01.059 (reposiTUm)

Contributions to Books

6.   Fiorentini, S., Lacerda de Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2020).
Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM.
In J. A. Martino, B.-Y. Nguyen, F. Gamiz, H. Ishii, J.-P. Raskin, S. Selberherr, E. Simoen (Eds.), ECS Transactions (pp. 159–164). ECS Transactions. https://doi.org/10.1149/09705.0159ecst (reposiTUm)

5.   Goes, W., Schanovsky, F., Grasser, T. (2013).
Advanced Modeling of Oxide Defects.
In T. Grasser (Ed.), Bias Temperature Instability for Devices and Circuits (pp. 409–446). Springer New York. https://doi.org/10.1007/978-1-4614-7909-3_16 (reposiTUm)

4.   Goes, W., Schanovsky, F., Hehenberger, P., Wagner, P.-J., Grasser, T. (2010).
(Invited) Charge Trapping and the Negative Bias Temperature Instability.
In ECS Transactions (pp. 565–589). ECS Transactions. https://doi.org/10.1149/1.3481647 (reposiTUm)

3.   Grasser, T., Goes, W., Kaczer, B. (2009).
Critical Modeling Issues in Negative Bias Temperature Instability.
In R. Ekwal Sah, J. Zhang, J. Deen, J. Yota, A. Toriumi (Eds.), ECS Transactions (pp. 265–287). ECS Transactions. https://doi.org/10.1149/1.3122096 (reposiTUm)

2.   Grasser, T., Gös, W., Kaczer, B. (2008).
Towards Engineering Modeling of Negative Bias Temperature Instability.
In Defects in Microelectronic Materials and Devices (pp. 399–436). Taylor and Francis/CRC Press. (reposiTUm)

1.   Karner, M., Holzer, S., Gös, W., Vasicek, M., Wagner, M., Kosina, H., Selberherr, S. (2006).
Numerical Analysis of Gate Stacks.
In S. Kar, S. De Gendt, M. Houssa, H. Iwai, D. Landheer, D. Misra (Eds.), ECS Transactions (pp. 299–308). ECS Transactions. https://doi.org/10.1149/1.2355721 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

118.   Jorstad, N., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2023).
Micromagnetic Modeling of SOT-MRAM Dynamics.
In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm)

117.   Sverdlov, V., Bendra, M., Pruckner, B., Jorstad, N., Hadamek, T., Ender, J., Lacerda de Orio, R., Gös, W. (2023).
Spin and Charge Transport in Ultra-Scaled MRAM Cells.
In Proceedings of the International Conference “Micro- and Nanoelectronics” (ICMNE) (p. 55), Moscow-Zvenigorod, Russian Federation. https://doi.org/10.29003/m3563.ICMNE-2023 (reposiTUm)

116.   Pruckner, B., Fiorentini, S., Jorstad, N., Hadamek, T., Selberherr, S., Gös, W., Sverdlov, V. (2023).
Switching Performance of Mo-Based pMTJ and dsMTJ Structures.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (pp. 144–145), Barcelona, Spain. (reposiTUm)

115.   Orio, R., Ender, J., Goes, W., Fiorentini, S., Selberherr, S., Sverdlov, V. (2022).
About the Switching Energy of a Magnetic Tunnel Junction Determined by Spin-Orbit Torque and Voltage-Controlled Magnetic Anisotropy.
In 2022 IEEE Latin American Electron Devices Conference (LAEDC), Puebla, Mexico, Mexico. https://doi.org/10.1109/laedc54796.2022.9908222 (reposiTUm)

114.   Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Jorstad, N., Goes, W., Selberherr, S. (2022).
Advanced Modeling of Emerging Devices for Digital Spintronics.
In 2nd International Conference on Nanoscience and Nanotechnology (p. 40), Dubai, United Arab Emirates. (reposiTUm)

113.   Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Jorstad, N., Goes, W., Selberherr, S. (2022).
Advanced Modeling of Emerging Magneto-Resistive Memory.
In NANOMEET 2022 2nd International Meet, Expo on Nanotechnology (pp. 78–79), Edinburgh, United Kingdom. (reposiTUm)

112.   Ender, J., Fiorentini, S., Orio, R., Hadámek, T., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Advances in Modeling Emerging Magnetoresistive Random Access Memories: From Finite Element Methods to Machine Learning Approaches.
In Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, Zvenigorod, Russian Federation. https://doi.org/10.1117/12.2624595 (reposiTUm)

111.   Fiorentini, S., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2022).
Comprehensive Evaluation of Torques in Ultra Scaled MRAM Devices.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 11–12), Granada, Spain. (reposiTUm)

110.   Fiorentini, S., Loch, W., Bendra, M., Jørstad, N., Ender, J., Orio, R., Hadámek, T., Goes, W., Sverdlov, V., Selberherr, S. (2022).
Design Analysis of Ultra-Scaled MRAM Cells.
In Proceedings of 2022 IEEE 16th International Conference on Solid-State, Integrated Circuit Technology (ICSICT), Nanjing, China, China. (reposiTUm)

109.   Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Goes, W., Selberherr, S. (2022).
Emerging Devices for Digital Spintronics.
In 2nd Global Conference, Expo on Nanotechnology, Nanoscience (pp. 32–33), online, INT. (reposiTUm)

108.   Fiorentini, S., Bendra, M., Ender, J., Goes, W., Sverdlov, V., Selberherr, S. (2022).
Evaluating Spin Transfer Torques in Multilayered Magnetic Tunnel Junctions and Spin Valves.
In Workshop on Innovative Nanoscale Devices and Systems. Book of Abstracts (pp. 44–45), Lihue, HI, United States. (reposiTUm)

107.   Jorstad, N., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Finite Element Modeling of Spin-Orbit Torques.
In Proceedings of the Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2022)) (pp. 1–2), Udine, Italy. (reposiTUm)

106.   Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Goes, W., Selberherr, S. (2022).
Interface Effects in Ultra-Scaled MRAM Cells.
In Letters from the 8th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2022 (p. 108373), Udine, Italy. https://doi.org/10.1016/j.sse.2022.108373 (reposiTUm)

105.   Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Goes, W., Selberherr, S. (2022).
Modeling Advanced Spintronic Based Magnetoresistive Memory.
In International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022), Yerevan, Armenia. https://doi.org/10.1049/icp.2022.2795 (reposiTUm)

104.   Sverdlov, V., Loch, W., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Jorstad, N., Goes, W., Selberherr, S. (2022).
Modeling Approach to Ultra-Scaled MRAM Cells.
In Book of Abstracts of the International Meet On Applied Science, Engineering and Technology (ASETMEET) (pp. 7–8), Taastrup, Copenhagen. (reposiTUm)

103.   Jørstad, N., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2022).
Modeling Interfacial and Bulk Spin-Orbit Torques.
In Book of Abstracts of the International Conference on Nanostructured Materials (NANO), Sevilla, Spain. (reposiTUm)

102.   Hadámek, T., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Modeling Thermal Effects in STT-MRAM.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 132–133), Granada, Spain. (reposiTUm)

101.   Bendra, M., Loch, W., Jorstad, N., Fiorentini, S., Selberherr, S., Gös, W., Sverdlov, V. (2022).
Modeling Ultra-Scaled Multi-Layer STT-MRAM Cells: A Unified Spin and Charge Drift-Diffusion Approach.
In Special MRAM poster session IEDM (pp. 18–19), San Francisco, CA, United States. (reposiTUm)

100.   Fiorentini, S., Bendra, M., Ender, J., Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Spin Torques in ULTRA-Scaled MRAM Devices.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 348–351), Milan, Italy. (reposiTUm)

99.   Fiorentini, S., Ender, J., Selberherr, S., Goes, W., Sverdlov, V. (2022).
Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach.
In The 26th World Multi-Conference on Systemics, Cybernetics and Informatics: WMSCI 2022. Proceedings Volume II (pp. 40–44), online, INT. (reposiTUm)

98.   Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Selberherr, S., Goes, W., Sverdlov, V. (2022).
Spin Transfer Torques in Ultra-Scaled MRAM Cells.
In 2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO) (pp. 129–132), Opatija, Croatia. (reposiTUm)

97.   Hadámek, T., Fiorentini, S., Bendra, M., Orio, R., Loch, W., Jorstad, N., Selberherr, S., Goes, W., Sverdlov, V. (2022).
Temperature Modeling in STT-MRAM:A Fully Three-Dimensional Finite Element Approach.
In Book of Abstracts of the International Conference on Nanostructured Materials (NANO), Sevilla, Spain. (reposiTUm)

96.   Ender, J., Fiorentini, S., Orio, R., Hadámek, T., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2021).
Advanced Modeling of Emerging MRAM: From Finite Element Methods to Machine Learning Approaches.
In Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod. (reposiTUm)

95.   Ender, J., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Advanced Modeling of Emerging Nonvolatile Magnetoresistive Devices.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 45–46). (reposiTUm)

94.   Hadámek, T., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Asymmetry of Current-Induced Heating in Magnetic Tunnel Junctions.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 49–50). (reposiTUm)

93.   Orio, R., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2021).
Deterministic Spin-Orbit Switching Scheme for an Array of Perpendicular MRAM Cells Suitable for Large Scale Integration.
In Proceedings of the Trends in Magnetism Conference (TMAG), Cefalù, Italy. (reposiTUm)

92.   Jørstad, N., Fiorentini, S., Goes, W., Sverdlov, V. (2021).
Efficient Finite Element Method Approach to Model Spin Orbit Torque MRAM.
In Proceedings of the 14th International MOS-AK Workshop (p. 1), Silicon Valley, USA, United States. (reposiTUm)

91.   Bendra, M., Ender, J., Fiorentini, S., Hadámek, T., Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2021).
Finite Element Method Approach to MRAM Modeling.
In 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), Opatija, Croatia. https://doi.org/10.23919/mipro52101.2021.9597194 (reposiTUm)

90.   Hadámek, T., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Heating Asymmetry in Magnetoresistive Random Access Memories.
In Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) (pp. 63–66), Orlando, Florida, USA. (reposiTUm)

89.   Ender, J., de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning.
In Microelectronics Reliability (p. 114231), Maastricht. https://doi.org/10.1016/j.microrel.2021.114231 (reposiTUm)

88.   Ender, J., Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Reinforcement Learning Approach for Deterministic SOT-MRAM Switching.
In Spintronics XIV (pp. 1180519-1–1180519-8), San Diego, United States. https://doi.org/10.1117/12.2593937 (reposiTUm)

87.   Ender, J., de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Reinforcement Learning Approach for Sub-Critical Current SOT-MRAM Switching.
In 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, TX, United States. https://doi.org/10.1109/sispad54002.2021.9592561 (reposiTUm)

86.   Ender, J., de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Reinforcement Learning to Reduce Failures in SOT-MRAM Switching.
In 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa53173.2021.9617362 (reposiTUm)

85.   Ender, J., Fiorentini, S., Sverdlov, V., Goes, W., Orio, R., Selberherr, S. (2021).
Reinforcement Learning Approach for Deterministic SOT-MRAM Switching.
In Spintronics XIV, San Diego, CA, USA. https://doi.org/10.1117/12.2593937 (reposiTUm)

84.   Fiorentini, S., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Spin Drift-Diffusion Approach for the Computation of Torques in Multi-Layered Structures.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 51–52). (reposiTUm)

83.   Fiorentini, S., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Spin and Charge Drift-Diffusion Approach to Torque Computation in Magnetic Tunnel Junctions.
In 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, TX, United States. https://doi.org/10.1109/sispad54002.2021.9592559 (reposiTUm)

82.   Fiorentini, S., Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2021).
Spin and Charge Drift-Diffusion Approach to Torque Computation in Spintronic Devices.
In WINDS Book of Abstracts (pp. 12–13), Kona. (reposiTUm)

81.   Fiorentini, S., Bendra, M., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Spin and Charge Drift-Diffusion in Ultra-Scaled MRAM Cells.
In Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM, San Francisco, CA, USA. https://doi.org/10.21203/rs.3.rs-1915307/v1 (reposiTUm)

80.   Hadamek, T., Bendra, M., Fiorentini, S., Ender, J., de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2021).
Temperature Increase in MRAM at Writing: A Finite Element Approach.
In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis53016.2021.9560669 (reposiTUm)

79.   Hadámek, T., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Gös, W., Selberherr, S., Sverdlov, V. (2021).
Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach.
In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS'2021), Caen, France. https://doi.org/10.1109/EuroSOI-ULIS53016.2021.9560669 (reposiTUm)

78.   Fiorentini, S., Ender, J., Selberherr, S., de Orio, R., Goes, W., Sverdlov, V. (2020).
Comprehensive Modeling of Coupled Spin and Charge Transport Through Magnetic Tunnel Junctions.
In 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy. https://doi.org/10.1109/eurosoi-ulis49407.2020.9365497 (reposiTUm)

77.   Fiorentini, S., Ender, J., Mohamedou, M., Selberherr, S., Orio, R., Goes, W., Sverdlov, V. (2020).
Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells.
In Spintronics XIII (pp. 50–56), Austria. https://doi.org/10.1117/12.2567480 (reposiTUm)

76.   Fiorentini, S., Ender, J., Mohamedou, M., Sverdlov, V., Goes, W., Orio, R., Selberherr, S. (2020).
Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells.
In Spintronics XIII, San Diego, CA, USA. https://doi.org/10.1117/12.2567480 (reposiTUm)

75.   Fiorentini, S., Ender, J., Mohamedou, M., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2020).
Computation of Torques in Magnetic Tunnel Junctions Through Spin and Charge Transport Modeling.
In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. https://doi.org/10.23919/sispad49475.2020.9241657 (reposiTUm)

74.   Ender, J., Mohamedou, M., Fiorentini, S., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2020).
Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells.
In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. https://doi.org/10.23919/sispad49475.2020.9241662 (reposiTUm)

73.   Sverdlov, V., Fiorentini, S., Ender, J., Goes, W., de Orio, R., Selberherr, S. (2020).
Emerging CMOS Compatible Magnetic Memories and Logic.
In 2020 IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica. https://doi.org/10.1109/laedc49063.2020.9073332 (reposiTUm)

72.   Fiorentini, S., Lacerda de Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2020).
Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM.
In ECS Meeting Abstracts (p. 1389), Honolulu, Austria. https://doi.org/10.1149/ma2020-01241389mtgabs (reposiTUm)

71.   de Orio, R., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2020).
Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer.
In 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy. https://doi.org/10.1109/eurosoi-ulis49407.2020.9365283 (reposiTUm)

70.   Orio, R., Makarov, A., Goes, W., Ender, J., Fiorentini, S., Selberherr, S., Sverdlov, V. (2020).
Switching of a Perpendicularly Magnetized Free-Layer by Spin-Orbit-Torques With Reduced Currents.
In Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) (pp. 58–61), Orlando, Florida, USA. (reposiTUm)

69.   Orio, R., Makarov, A., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2019).
A Dynamical Approach to Fast and Reliable External Field Free Perpendicular Magnetization Reversal by Spin-Orbit Torques.
In Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM (p. 1), San Francisco, CA, USA, Austria. (reposiTUm)

68.   Fiorentini, S., Orio, R., Goes, W., Ender, J., Sverdlov, V. (2019).
Comprehensive Comparison of Switching Models for Perpendicular Spin-Transfer Torque MRAM Cells.
In 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy. https://doi.org/10.1109/sispad.2019.8870359 (reposiTUm)

67.   Fiorentini, S., Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2019).
Comprehensive Modeling of Switching in Perpendicular STT-MRAM.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 107–108), Kona. (reposiTUm)

66.   Orio, R., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019).
Efficient Magnetic Field Free Switching of Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM.
In Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 152–153), Bologna, Italy. (reposiTUm)

65.   de Orio, R., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019).
Efficient Magnetic Field-Free Switching of a Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM.
In 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis45800.2019.9041920 (reposiTUm)

64.   Orio, R., Makarov, A., Selberherr, S., Gös, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019).
Robust Magnetic Field Free Switching Scheme for Perpendicular Free Layer in Advanced Spin Orbit Torque Magnetoresistive Random Access Memory.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2019) (pp. 69–71), Evanston, IL, United States. (reposiTUm)

63.   Orio, R., Selberherr, S., Ender, J., Fiorentini, S., Goes, W., Sverdlov, V. (2019).
Robustness of the Two-Pulse Switching Scheme for SOT-MRAM.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 54–55), Kona. (reposiTUm)

62.   de Orio, R., Makarov, A., Selberherr, S., Gös, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019).
Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM.
In ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), Cracow, Poland. https://doi.org/10.1109/essderc.2019.8901780 (reposiTUm)

61.   Orio, R., Makarov, A., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019).
Two-Pulse Magnetic Field Free Switching Scheme for Advanced Perpendicular SOT-MRAM.
In Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM) (p. 34), Heraklion, Greece. (reposiTUm)

60.   Rzepa, G., Waltl, M., Gös, W., Kaczer, B., Franco, J., Chiarella, T., Horiguchi, N., Grasser, T. (2016).
Complete Extraction of Defect Bands Responsible for Instabilities in N and pFinFETs.
In 2016 Symposium on VLSI Technology Digest of Technical Papers (pp. 208–209), Kyoto, Japan. (reposiTUm)

59.   Waltl, M., Grill, A., Rzepa, G., Goes, W., Franco, J., Kaczer, B., Mitard, J., Grasser, T. (2016).
Nanoscale Evidence for the Superior Reliability of SiGe High-K pMOSFETs.
In 2016 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2016.7574644 (reposiTUm)

58.   Grasser, T., Waltl, M., Rzepa, G., Goes, W., Wimmer, Y., El-Sayed, A., Shluger, A., Reisinger, H., Kaczer, B. (2016).
The “permanent” Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing.
In 2016 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2016.7574504 (reposiTUm)

57.   Wimmer, Y., Goes, W., El-Sayed, A., Shluger, A., Grasser, T. (2015).
A Density-Functional Study of Defect Volatility in Amorphous Silicon Dioxide.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292254 (reposiTUm)

56.   Rzepa, G., Gös, W., Kaczer, B., Grasser, T. (2015).
Characterization and Modeling of Reliability Issues in Nanoscale Devices.
In Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS) 2015 (pp. 2445–2448), Rio de Janeiro, Brasilien. (reposiTUm)

55.   Grasser, T., Waltl, M., Wimmer, Y., Goes, W., Kosik, R., Rzepa, G., Reisinger, H., Pobegen, G., El-Sayed, A., Shluger, A., Kaczer, B. (2015).
Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes.
In 2015 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2015.7409739 (reposiTUm)

54.   Rzepa, G., Waltl, M., Goes, W., Kaczer, B., Grasser, T. (2015).
Microscopic Oxide Defects Causing BTI, RTN, and SILC on High-K FinFETs.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292279 (reposiTUm)

53.   Wimmer, Y., Gös, W., El-Sayed, A., Shluger, A., Grasser, T. (2015).
On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 97–98), Urbana-Champaign, IL, USA. (reposiTUm)

52.   Grasser, T., Waltl, M., Goes, W., Wimmer, Y., El-Sayed, A., Shluger, A., Kaczer, B. (2015).
On the Volatility of Oxide Defects: Activation, Deactivation, and Transformation.
In 2015 IEEE International Reliability Physics Symposium, Phoenix. https://doi.org/10.1109/irps.2015.7112739 (reposiTUm)

51.   Kaczer, B., Franco, J., Weckx, P., Roussel, P., Bury, E., Cho, M., Degraeve, R., Linten, D., Groeseneken, G., Kukner, H., Raghavan, P., Catthoor, F., Rzepa, G., Goes, W., Grasser, T. (2015).
The Defect-Centric Perspective of Device and Circuit Reliability &Amp;#x2014; From Individual Defects to Circuits.
In 2015 45th European Solid State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2015.7324754 (reposiTUm)

50.   Waltl, M., Gös, W., Rott, K., Reisinger, H., Grasser, T. (2014).
A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS Case.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. XT18.1–XT18.5), Phoenix. (reposiTUm)

49.   Goes, W., Waltl, M., Wimmer, Y., Rzepa, G., Grasser, T. (2014).
Advanced Modeling of Charge Trapping: RTN, 1/F Noise, SILC, and BTI.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931567 (reposiTUm)

48.   Grasser, T., Rzepa, G., Waltl, M., Goes, W., Rott, K., Rott, G., Reisinger, H., Franco, J., Kaczer, B. (2014).
Characterization and Modeling of Charge Trapping: From Single Defects to Devices.
In 2014 IEEE International Conference on IC Design & Technology, Austin, TX, USA. https://doi.org/10.1109/icicdt.2014.6838620 (reposiTUm)

47.   Grasser, T., Rott, K., Reisinger, H., Waltl, M., Gös, W. (2014).
Evidence for Defect Pairs in SiON pMOSFETs.
In Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 228–263), Singapore. (reposiTUm)

46.   Grasser, T., Goes, W., Wimmer, Y., Schanovsky, F., Rzepa, G., Waltl, M., Rott, K., Reisinger, H., Afanas'ev, V., Stesmans, A., El-Sayed, A., Shluger, A. (2014).
On the Microscopic Structure of Hole Traps in pMOSFETs.
In 2014 IEEE International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2014.7047093 (reposiTUm)

45.   Rzepa, G., Goes, W., Rott, G., Rott, K., Karner, M., Kernstock, C., Kaczer, B., Reisinger, H., Grasser, T. (2014).
Physical Modeling of NBTI: From Individual Defects to Devices.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931568 (reposiTUm)

44.   Bury, E., Degraeve, R., Cho, M., Kaczer, B., Gös, W., Grasser, T., Horiguchi, N., Groeseneken, G. (2014).
Study of (Correlated) Trap Sites in SILC, BTI and RTN in SiON and HKMG Devices.
In Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 254–257), Singapore. (reposiTUm)

43.   Goes, W., Toledano-Luque, M., Schanovsky, F., Bina, M., Baumgartner, O., Kaczer, B., Grasser, T. (2013).
(Invited) Multiphonon Processes as the Origin of Reliability Issues.
In ECS Transactions (pp. 31–47), Honolulu, Austria. https://doi.org/10.1149/05807.0031ecst (reposiTUm)

42.   Gös, W., Toledano-Luque, M., Baumgartner, O., Schanovsky, F., Kaczer, B., Grasser, T. (2013).
A Comprehensive Model for Correlated Drain and Gate Current Fluctuations.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 46–47), Urbana-Champaign, IL, USA. (reposiTUm)

41.   Schanovsky, F., Baumgartner, O., Goes, W., Grasser, T. (2013).
A Detailed Evaluation of Model Defects as Candidates for the Bias Temperature Instability.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650559 (reposiTUm)

40.   Grasser, T., Rott, K., Reisinger, H., Wagner, P., Gös, W., Schanovsky, F., Waltl, M., Toledano-Luque, M., Kaczer, B. (2013).
Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect Spectroscopy.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 1–6), Phoenix. (reposiTUm)

39.   Schanovsky, F., Goes, W., Grasser, T. (2013).
Advanced Modeling of Charge Trapping at Oxide Defects.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650671 (reposiTUm)

38.   Baumgartner, O., Bina, M., Goes, W., Schanovsky, F., Toledano-Luque, M., Kaczer, B., Kosina, H., Grasser, T. (2013).
Direct Tunneling and Gate Current Fluctuations.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650563 (reposiTUm)

37.   Kaczer, B., Afanas'ev, V., Rott, K., Cerbu, F., Franco, J., Goes, W., Grasser, T., Madia, O., Nguyen, A., Stesmans, A., Reisinger, H., Toledano-Luque, M., Weckx, P. (2013).
Experimental Characterization of BTI Defects.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650670 (reposiTUm)

36.   Grasser, T., Rott, K., Reisinger, H., Waltl, M., Wagner, P., Schanovsky, F., Goes, W., Pobegen, G., Kaczer, B. (2013).
Hydrogen-Related Volatile Defects as the Possible Cause for the Recoverable Component of NBTI.
In 2013 IEEE International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2013.6724637 (reposiTUm)

35.   Grasser, T., Rott, K., Reisinger, H., Waltl, M., Schanovsky, F., Gös, W., Kaczer, B. (2013).
Recent Advances in Understanding Oxide Traps in pMOS Transistors.
In Proceedings of 2013 IWDTF (pp. 95–96), Tokyo, Japan. (reposiTUm)

34.   Gös, W., Toledano-Luque, M., Baumgartner, O., Bina, M., Schanovsky, F., Kaczer, B., Grasser, T. (2013).
Understanding Correlated Drain and Gate Current Fluctuations.
In Proceedings of the 20th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 51–56), Singapore. (reposiTUm)

33.   Gös, W., Schanovsky, F., Grasser, T., Reisinger, H., Kaczer, B. (2011).
Advanced Modeling of Oxide Defects for Random Telegraph Noise.
In Proceedings of the 21st International Conference on Noise and Fluctuations (p. 4), Salamanca, Spanien, Austria. (reposiTUm)

32.   Gös, W., Schanovsky, F., Reisinger, H., Kaczer, B., Grasser, T. (2011).
Bistable Defects as the Cause for NBTI and RTN.
In GADEST 2011: Abstract Booklet (p. 153), Loipersdorf, Austria, Austria. (reposiTUm)

31.   Bina, M., Aichinger, T., Pobegen, G., Gös, W., Grasser, T. (2011).
Modeling of DCIV Recombination Currents Using a Multistate Multiphonon Model.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 27–31), California. (reposiTUm)

30.   Hehenberger, P., Goes, W., Baumgartner, O., Franco, J., Kaczer, B., Grasser, T. (2011).
Quantum-Mechanical Modeling of NBTI in High-K SiGe MOSFETs.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035036 (reposiTUm)

29.   Schanovsky, F., Gös, W., Grasser, T. (2010).
Ab-Initio Calculation of the Vibrational Influence on Hole-Trapping.
In 2010 14th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2010.5677989 (reposiTUm)

28.   Gös, W., Schanovsky, F., Hehenberger, P., Wagner, P., Grasser, T. (2010).
Charge Trapping and the Negative Bias Temperature Instability.
In Meet. Abstr. - Electrochem. Soc. 2010 (p. 565), Las Vegas, USA. (reposiTUm)

27.   Schanovsky, F., Gös, W., Grasser, T. (2010).
Hole Capture Into Oxide Defects in MOS Structures From First Principles.
In Abstract Book (p. 435), Berlin. (reposiTUm)

26.   Schanovsky, F., Gös, W., Grasser, T. (2010).
Mulit-Phonon Hole-Trapping From First-Principles.
In Book of Abstracts (p. 54), Catania. (reposiTUm)

25.   Grasser, T., Kaczer, B., Goes, W., Reisinger, H., Aichinger, T., Hehenberger, P., Wagner, P., Schanovsky, F., Franco, J., Roussel, P., Nelhiebel, M. (2010).
Recent Advances in Understanding the Bias Temperature Instability.
In 2010 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2010.5703295 (reposiTUm)

24.   Grasser, T., Reisinger, H., Wagner, P., Kaczer, B., Schanovsky, F., Gös, W. (2010).
The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 16–25), Phoenix. (reposiTUm)

23.   Goes, W., Grasser, T., Karner, M., Kaczer, B. (2009).
A Model for Switching Traps in Amorphous Oxides.
In 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States. https://doi.org/10.1109/sispad.2009.5290226 (reposiTUm)

22.   Grasser, T., Kaczer, B., Gös, W., Aichinger, T., Hehenberger, P., Nelhiebel, M. (2009).
A Two-Stage Model for Negative Bias Temperature Instability.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 33–44), Phoenix. (reposiTUm)

21.   Bindu, B., Gös, W., Kaczer, B., Grasser, T. (2009).
Analytical Solution of the Switching Trap Model for Negative Bias Temperature Stress.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 93–96), S. Lake Tahoe. (reposiTUm)

20.   Tyaginov, S., Gös, W., Grasser, T., Sverdlov, V., Schwaha, P., Heinzl, R., Stimpfl, F. (2009).
Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole Crystal.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 514–522), Phoenix. (reposiTUm)

19.   Hehenberger, P., Aichinger, T., Grasser, T., Gös, W., Triebl, O., Kaczer, B., Nelhiebel, M. (2009).
Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement Technique.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 1033–1038), Phoenix. (reposiTUm)

18.   Tyaginov, S., Sverdlov, V., Gös, W., Grasser, T. (2009).
Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate.
In Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Maastricht. (reposiTUm)

17.   Tyaginov, S., Sverdlov, V., Gös, W., Schwaha, P., Heinzl, R., Stimpfl, F., Grasser, T. (2009).
Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics.
In Proceedings of the 2009 MRS Spring Meeting, San Francisco. (reposiTUm)

16.   Tyaginov, S., Sverdlov, V., Gös, W., Schwaha, P., Heinzl, R., Stimpfl, F., Grasser, T. (2009).
Si-O Bond-Breakage Energetics Under Consideration of the Whole Crystal.
In Proceedings of the International Semiconductor Technology Conference, China Semiconductor Technology International Conference (p. 84), Shanghai. (reposiTUm)

15.   Tyaginov, S., Sverdlov, V., Gös, W., Grasser, T. (2009).
Statistics of Si-O Bond-Breakage Rate Variations Induced by O-Si-O Angle Fluctuations.
In 2009 13th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2009.5091156 (reposiTUm)

14.   Grasser, T., Reisinger, H., Goes, W., Aichinger, T., Hehenberger, P., Wagner, P., Nelhiebel, M., Franco, J., Kaczer, B. (2009).
Switching Oxide Traps as the Missing Link Between Negative Bias Temperature Instability and Random Telegraph Noise.
In 2009 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2009.5424235 (reposiTUm)

13.   Gös, W., Karner, M., Sverdlov, V., Grasser, T. (2008).
A Rigorous Model for Trapping and Detrapping in Thin Gate Dielectrics.
In Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 249–254), Singapore. (reposiTUm)

12.   Grasser, T., Kaczer, B., Gös, W. (2008).
An Energy-Level Perspective of Bias Temperature Instability.
In Proceedings of the 19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Maastricht. (reposiTUm)

11.   Grasser, T., Kaczer, B., Aichinger, T., Gös, W., Nelhiebel, M. (2008).
Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-K Gate Stacks.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 91–95), S. Lake Tahoe. (reposiTUm)

10.   Goes, W., Karner, M., Tyaginov, S., Hehenberger, P., Grasser, T. (2008).
Level Shifts and Gate Interfaces as Vital Ingredients in Modeling of Charge Trapping.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648239 (reposiTUm)

9.   Grasser, T., Goes, W., Kaczer, B. (2008).
Modeling Bias Temperature Instability During Stress and Recovery.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648238 (reposiTUm)

8.   Grasser, T., Wagner, P., Hehenberger, P., Gös, W., Kaczer, B. (2007).
A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 6–11), S. Lake Tahoe. (reposiTUm)

7.   Gös, W., Grasser, T. (2007).
Charging and Discharging of Oxide Defects in Reliability Issues.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 27–32), S. Lake Tahoe. (reposiTUm)

6.   Gös, W., Grasser, T. (2007).
First-Principles Investigation on Oxide Trapping.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 157–160), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_38 (reposiTUm)

5.   Grasser, T., Kaczer, B., Hehenberger, P., Gös, W., Connor, R., Reisinger, H., Gustin, W., Schlünder, C. (2007).
Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability.
In 2007 IEEE International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2007.4419069 (reposiTUm)

4.   Grasser, T., Gös, W., Sverdlov, V., Kaczer, B. (2007).
The Universality of NBTI Relaxation and Its Implications for Modeling and Characterization.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 268–280), Phoenix. (reposiTUm)

3.   Grasser, T., Gös, W., Kaczer, B. (2006).
Modeling of Dispersive Transport in the Context of Negative Bias Temperature Instability.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 5–10), S. Lake Tahoe. (reposiTUm)

2.   Karner, M., Holzer, S., Vasicek, M., Gös, W., Wagner, M., Kosina, H., Selberherr, S. (2006).
Numerical Analysis of Gate Stacks.
In 210th ECS Meeting (p. 1), Cancun. (reposiTUm)

1.   Karner, M., Gehring, A., Wagner, M., Entner, R., Holzer, S., Gös, W., Vasicek, M., Grasser, T., Kosina, H., Selberherr, S. (2006).
VSP-A Gate Stack Analyzer.
In WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Program and Abstracts (pp. 101–102), Catania. (reposiTUm)

Talks and Poster Presentations (without Proceedings-Entry)

3.   Fiorentini, S., Orio, R., Goes, W., Ender, J., Sverdlov, V. (2019).
Comprehensive Comparison of Switching Models for Perpendicular Spin Transfer Torque MRAM Cells.
European Materials Research Society (EMRS), Strasbourg, France, EU. (reposiTUm)

2.   Ender, J., Orio, R., Fiorentini, S., Goes, W., Sverdlov, V. (2019).
Large-Scale Finite Element Micromagnetics Simulations Using Open Source Software.
European Materials Research Society (EMRS), Strasbourg, France, EU. (reposiTUm)

1.   Grasser, T., Reisinger, H., Wagner, P.-J., Gös, W., Schanovsky, F., Kaczer, B. (2010).
The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability.
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. (reposiTUm)

Doctor's Theses (authored and supervised)

Diploma and Master Theses (authored and supervised)

3.  G. Rzepa:
"Microscopic Modeling of NBTI in MOS Transistors";
Supervisor: T. Grasser, W. Gös; Institut für Mikroelektronik, 2013; final examination: 2013-11-20.

2.   Bina, M. (2010).
Simulation of Interface States Generated During Stress in MOSFETs
 Technische Universität Wien. (reposiTUm)

1.   Gös, W. (2005).
Grain Boundaries in Back Contact Solar Cells
 Technische Universität Wien. (reposiTUm)

Scientific Reports

3.   Baumgartner, O., Ertl, O., Gös, W., Stimpfl, F., Windbacher, T., Selberherr, S. (2008).
VISTA Status Report December 2008.
(reposiTUm)

2.   Grasser, T., Gös, W., Triebl, O., Hehenberger, P. P., Wagner, P.-J., Schwaha, P., Heinzl, R., Holzer, S., Entner, R., Wagner, S., Schanovsky, F. (2007).
3 Year Report 2005-2007.
(reposiTUm)

1.   Baumgartner, O., Gös, W., Nentchev, A., Stimpfl, F., Sverdlov, V., Selberherr, S. (2007).
VISTA Status Report December 2007.
(reposiTUm)