Publications Andreas Gehring
85 records
| 21. | M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, W. Gös, M. Vasicek, O. Baumgartner, Ch. Kernstock, K. Schnass, G. Zeiler, T. Grasser, H. Kosina, S. Selberherr: "A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications"; Journal of Computational Electronics, 6, (2007), 179 - 182 doi:10.1007/s10825-006-0077-7. BibTeX |
| 20. | M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr: "VSP - A Gate Stack Analyzer"; Microelectronics Reliability, 47, (2007), 704 - 708 doi:10.1016/j.microrel.2007.01.059. BibTeX |
| 19. | M. Karner, A. Gehring, H. Kosina: "Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics"; Journal of Computational Electronics, 5, (2006), 161 - 165 doi:10.1007/s10825-006-8837-y. BibTeX |
| 18. | L.C. Castro, D.L. John, D.L. Pulfrey, M. Pourfath, A. Gehring, H. Kosina: "Method for Predicting fT for Carbon Nanotube FETs"; IEEE Transactions on Nanotechnology, Vol. 4, (2005), 699 - 704 doi:10.1109/TNANO.2005.858603. BibTeX |
| 17. | A. Gehring, H. Kosina: "Wigner Function-Based Simulation of Quantum Transport in Scaled DG-MOSFETs Using a Monte Carlo Method"; Journal of Computational Electronics, 4, (2005), 67 - 70. BibTeX |
| 16. | A. Gehring, S. Selberherr: "Gate Current Modeling for MOSFETs"; Journal of Computational and Theoretical Nanoscience, 2, (invited) (2005), 26 - 44 doi:10.1166/jctn.2005.002. BibTeX |
| 15. | M. Pourfath, A. Gehring, E. Ungersböck, H. Kosina, S. Selberherr, B.-H. Cheong, W. Park: "Separated Carrier Injection Control in Carbon Nanotube Field-Effect Transistors"; Journal of Applied Physics, 97, (2005), 106103-1 - 106103-3 doi:10.1063/1.1897491. BibTeX |
| 14. | M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W.J. Park, H. Kosina, S. Selberherr: "Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors"; Microelectronic Engineering, 81, (2005), 428 - 433 doi:10.1016/j.mee.2005.03.043. BibTeX |
| 13. | M. Pourfath, E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, W.J. Park, B.-H. Cheong: "Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors"; Journal of Computational Electronics, 4, (2005), 75 - 78 doi:10.1007/s10825-005-7111-z. BibTeX |
| 12. | V. Sverdlov, A. Gehring, H. Kosina, S. Selberherr: "Quantum Transport in Ultra-Scaled Double-Gate MOSFETs: A Wigner Function-Based Monte Carlo Approach"; Solid-State Electronics, 49, (2005), 1510 - 1515 doi:10.1016/j.sse.2005.07.013. BibTeX |
| 11. | E. Ungersböck, M. Pourfath, H. Kosina, A. Gehring, B.-H. Cheong, W.J. Park, S. Selberherr: "Optimization of Single-Gate Carbon-Nanotube Field-Effect Transistors"; IEEE Transactions on Nanotechnology, 4, (2005), 533 - 538 doi:10.1109/TNANO.2005.851402. BibTeX |
| 10. | T. Ayalew, A. Gehring, T. Grasser, S. Selberherr: "Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination"; Microelectronics Reliability, 44, (2004), 1473 - 1478 doi:10.1016/j.microrel.2004.07.042. BibTeX |
| 9. | A. Gehring, S. Selberherr: "Evolution of Current Transport Models for Engineering Applications"; Journal of Computational Electronics, 3, (2004), 149 - 155 doi:10.1007/s10825-004-7035-z. BibTeX |
| 8. | A. Gehring, S. Selberherr: "Modeling of Tunneling Current and Gate Dielectric Reliability for Nonvolatile Memory Devices"; IEEE Transactions on Device and Materials Reliability, 4, (2004), 306 - 319 doi:10.1109/TDMR.2004.836727. BibTeX |
| 7. | A. Gehring, S. Selberherr: "Statistical Simulation of Gate Dielectric Wearout, Leakage, and Breakdown"; Microelectronics Reliability, 44, (2004), 1879 - 1884 doi:10.1016/j.microrel.2004.07.101. BibTeX |
| 6. | T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr: "Improving SiC Lateral DMOSFET Reliability under High Field Stress"; Microelectronics Reliability, 43, (2003), 1889 - 1894 doi:10.1016/S0026-2714(03)00321-4. BibTeX |
| 5. | A. Gehring, T. Grasser, H. Kosina, S. Selberherr: "Energy Transport Gate Current Model Accounting for Non-Maxwellian Energy Distribution"; Electronics Letters, 39, (2003), 691 - 692 doi:10.1049/el:20030440. BibTeX |
| 4. | A. Gehring, F. Jimenez-Molinos, H. Kosina, A. Palma, F. Gamiz, S. Selberherr: "Modeling of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM Devices"; Microelectronics Reliability, 43, (2003), 1495 - 1500 doi:10.1016/S0026-2714(03)00265-8. BibTeX |
| 3. | A. Gehring, H. Kosina, S. Selberherr: "Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method"; Journal of Computational Electronics, 2, (2003), 219 - 223 doi:10.1023/B:JCEL.0000011428.85286.7d. BibTeX |
| 2. | A. Gehring, T. Grasser, B.-H. Cheong, S. Selberherr: "Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer-Matrix Method"; Solid-State Electronics, 46, (2002), 1545 - 1551 doi:10.1016/S0038-1101(02)00103-X. BibTeX |
| 1. | A. Gehring, T. Grasser, H. Kosina, S. Selberherr: "Simulation of Hot-Electron Oxide Tunneling Current Based on a Non-Maxwellian Electron Energy Distribution Function"; Journal of Applied Physics, 92, (2002), 6019 - 6027 doi:10.1063/1.1516617. BibTeX |
| 3. | A. Gehring, S. Selberherr: "Tunneling Models for Semiconductor Device Simulation"; in "Handbook of Theoretical and Computational Nanotechnology", issued by Forschungszentrum Karlsruhe; American Scientific Publishers, Los Angeles, 2006, ISBN: 1-58883-042-x, 469 - 543. BibTeX |
| 2. | M. Karner, A. Gehring, S. Holzer, H. Kosina: "Efficient Calculation of Quasi-bound States for the Simulation of Direct Tunneling"; in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 3743, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer Berlin Heidelberg, 2006, ISBN: 3-540-31994-8, 572 - 577 doi:10.1007/11666806_65. BibTeX |
| 1. | M. Karner, A. Gehring, S. Holzer, H. Kosina, S. Selberherr: "Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics"; in "Physics and Technology of High-k Gate Dielectrics III, Vol. 1 No. 5", issued by The Electrochemical Society; S. Kar, S. De Gendt, M. Houssa, D. Landheer, D. Misra, W. Tsai (ed); ECS Transactions, 2006, ISBN: 1-56677-444-6, 693 - 703 doi:10.1149/1.2209316. BibTeX |
| 47. | M. Karner, E. Ungersböck, A. Gehring, S. Holzer, H. Kosina, S. Selberherr: "Strain Effects on Quasi-Bound State Tunneling in Advanced SOI CMOS Technologies"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 314 - 317 doi:10.1109/SISPAD.2006.282898. BibTeX |
| 46. | M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr: "VSP-A Gate Stack Analyzer"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 2006-06-26 - 2006-06-28; in "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Program and Abstracts", (2006), 101 - 102. BibTeX |
| 45. | M. Karner, A. Gehring, S. Holzer, M. Wagner, H. Kosina: "Continuum Versus Quasi-Bound State Tunneling in Novel Device Architectures"; Poster: Silicon Nanoelectronics Workshop, Honolulu; 2006-06-11 - 2006-06-12; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 161 - 162. BibTeX |
| 44. | M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, H. Kosina, T. Grasser, S. Selberherr: "VSP - A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications"; Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 255 - 256. BibTeX |
| 43. | R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring, S. Selberherr: "Impact of NBTI-driven Parameter Degradation on Lifetime of a 90nm p-MOSFET"; Poster: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 2005-10-17 - 2005-10-20; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2005), ISBN: 0-7803-8992-1, 99 - 102. BibTeX |
| 42. | M. Karner, A. Gehring, S. Holzer, H. Kosina, S. Selberherr: "Efficient Calculation of Quasi-Bound State Tunneling through Stacked Dielectrics"; Talk: Meeting of the Electrochemical Society (ECS), Los Angeles; 2005-10-16 - 2005-10-21; in "208th ECS Meeting", (2005), 1119, ISSN: 1091-8213, 1 page(s) . BibTeX |
| 41. | V. Sverdlov, A. Gehring, H. Kosina, S. Selberherr: "Tunneling and Intersubband Coupling in Ultra-Thin Body Double-Gate MOSFETs"; Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble; 2005-09-12 - 2005-09-16; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2005), Cdrom Isbn: 0-7803-9204-3, ISBN: 0-7803-9203-5, 93 - 96. BibTeX |
| 40. | R. Entner, A. Gehring, H. Kosina, T. Grasser, S. Selberherr: "Modeling of Tunneling Currents for Highly Degraded CMOS Devices"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 219 - 222 doi:10.1109/SISPAD.2005.201512. BibTeX |
| 39. | M. Karner, A. Gehring, H. Kosina, S. Selberherr: "Efficient Calculation of Quasi-Bound State Tunneling in CMOS Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 35 - 38 doi:10.1109/SISPAD.2005.201466. BibTeX |
| 38. | A. Gehring, S. Selberherr: "Current Transport Models for Nano-Scale Semiconductor Devices"; Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; (invited) 2005-07-10 - 2005-07-13; in "Proc. 9th World Multi-Conf.on Systemics, Cybernetics and Informatics", (2005), Vol. 6, ISBN: 980-6560-58-2, 366 - 371. BibTeX |
| 37. | M. Karner, A. Gehring, H. Kosina: "Efficient Calculation of Life Time Based Direct Tunneling through Stacked Dielectrics"; Talk: Modelling and Simulation of Electron Devices (MSED), Pisa; 2005-07-04 - 2005-07-05; in "15th Workshop on Modelling and Simulation of Electron Devices", (2005), 97 - 98. BibTeX |
| 36. | M. Karner, A. Gehring, S. Holzer, H. Kosina: "On the Efficient Calculation of Quasi-Bound States for the Simulation of Direct Tunneling"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2005-06-06 - 2005-06-10; in "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2005), 33 - 34. BibTeX |
| 35. | R. Entner, A. Gehring, H. Kosina, T. Grasser, S. Selberherr: "Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices"; Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 45 - 48. BibTeX |
| 34. | M. Pourfath, A. Gehring, B.-H. Cheong, W.J. Park, H. Kosina, S. Selberherr: "Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration"; Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN: 0-9767985-4-9), ISBN: 0-9767985-2-2, 128 - 131. BibTeX |
| 33. | R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring, S. Selberherr: "Simulation of Dynamic NBTI Degradation for a 90 nm CMOS Technology"; Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 29 - 32. BibTeX |
| 32. | A. Gehring, V. Sverdlov, H. Kosina, S. Selberherr: "Quantum Transport in Ultra-Scaled Double-gate MOSFETs: A Wigner Function-based Monte Carlo Approach"; Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada; 2005-01-19 - 2005-01-21; in "EUROSOI 2005 First Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits", (2005), 71 - 72. BibTeX |
| 31. | A. Gehring, S. Selberherr: "Gate Current Modeling for MOSFETs"; Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Punta Cana; (invited) 2004-11-03 - 2004-11-05; in "Proceedings of the ICCDCS 2004", (2004), ISBN: 0-7803-8777-5, 1 - 8. BibTeX |
| 30. | A. Gehring, H. Kosina: "Wigner-Function Based Simulation of Classic and Ballistic Transport in Scaled DG-MOSFETs Using the Monte Carlo Method"; Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 2004-10-24 - 2004-10-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 227 - 228 doi:10.1109/IWCE.2004.1407409. BibTeX |
| 29. | A. Gehring, S. Selberherr: "Evolution of Current Transport Models for Engineering Applications"; Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; (invited) 2004-10-24 - 2004-10-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 20 - 21 doi:10.1109/IWCE.2004.1407298. BibTeX |
| 28. | M. Pourfath, E. Ungersböck, A. Gehring, W. Park, B.-H. Cheong, H. Kosina, S. Selberherr: "Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors"; Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 2004-10-24 - 2004-10-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 237 - 238 doi:10.1109/IWCE.2004.1407414. BibTeX |
| 27. | A. Gehring, S. Selberherr: "Gate Leakage Models for Device Simulation"; Talk: R. Huang, M. Yu, J. Liou, T. Hiramoto, C. Claeys (ed); International Conference on Solid State and Integrated Circuit Technology (ICSICT), Beijing; (invited) 2004-10-18 - 2004-10-21; in "7th International Conference on Solid-State and Integrated Circuits Technology Proceedings", (2004), Volume II, ISBN: 0-7803-8511-x, 971 - 976. BibTeX |
| 26. | M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr: "Improving the Ambipolar Behavior of Schottky Barrier Carbon Nanotube Field Effect Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Leuven; 2004-09-21 - 2004-09-23; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2004), ISBN: 0780384784, 429 - 432. BibTeX |
| 25. | M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr: "Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors"; Talk: Nano and Giga Challenges in Microelectronics (NGCM), Krakau; 2004-09-13 - 2004-09-17; in "Nano and Giga Challenges in Microelectronics Book of Abstracts", (2004), 201. BibTeX |
| 24. | A. Gehring, S. Selberherr: "On the Calculation of Quasi-Bound States and Their Impact on Direct Tunneling in CMOS Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 25 - 28 doi:10.1007/978-3-7091-0624-2_6. BibTeX |
| 23. | M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, H. Kosina, S. Selberherr: "Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 149 - 152 doi:10.1007/978-3-7091-0624-2_35. BibTeX |
| 22. | A. Gehring, S. Selberherr: "Modeling of Wearout, Leakage, and Breakdown of Gate Dielectrics"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu; 2004-07-05 - 2004-07-08; in "11th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2004), ISBN: 0-7803-8454-7, 61 - 64. BibTeX |
| 21. | R. Entner, A. Gehring, T. Grasser, S. Selberherr: "A Comparison of Quantum Correction Models for the Three-Dimensional Simulation of FinFET Structures"; Poster: International Spring Seminar on Electronics Technology (ISSE), Sofia; 2004-05-13 - 2004-05-16; in "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", (2004), 1, ISBN: 0-7803-8422-9, 114 - 117. BibTeX |
| 20. | E. Ungersböck, M. Pourfath, A. Gehring, H. Kosina, B.-H. Cheong, S. Selberherr: "Optimization of Carbon Nanotube Field Effect Transistors"; Poster: Symposium on Nano Device Technology (SNDT), Hsinchu; 2004-05-12 - 2004-05-13; in "Proceedings of the Symposium on Nano Device Technology", (2004), 117 - 120. BibTeX |
| 19. | E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, B.-H. Cheong, W. B. Choi: "Analysis of Carrier Transport in Carbon Nanotube FET Devices"; Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 2003-12-16 - 2003-12-20; in "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6, 1059 - 1061. BibTeX |
| 18. | F. Jimenez-Molinos, A. Palma, A. Gehring, F. Gamiz, H. Kosina, S. Selberherr: "Static and Transient Simulation of Inelastic Trap-Assisted Tunneling"; Talk: Workshop on Modeling and Simulation of Electron Devices (MSED), Barcelona; 2003-10-16 - 2003-10-17; in "14th Workshop on Modeling and Simulation of Electron Devices", (2003), ISBN: 84-688-1314-1, 65 - 68. BibTeX |
| 17. | T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr: "Silicon Carbide Accumulation-Mode Laterally Diffused MOSFET"; Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3, 581 - 584. BibTeX |
| 16. | A. Gehring, S. Harasek, E. Bertagnolli, S. Selberherr: "Evaluation of ZrO2 Gate Dielectrics for Advanced CMOS Devices"; Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3, 473 - 476. BibTeX |
| 15. | E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, B.-H. Cheong, W. B. Choi: "Simulation of Carrier Transport in Carbon Nanotube Field Effect Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3, 411 - 414. BibTeX |
| 14. | T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr: "Modeling and Simulation of SiC MOSFETs"; Talk: International Conference on Applied Modelling and Simulation, Marbella; 2003-09-03 - 2003-09-05; in "Proceedings of the Twelfth IASTED International Conference on Applied Simulation and Modelling", (2003), ISBN: 0-88986-384-9, 552 - 556. BibTeX |
| 13. | A. Gehring, H. Kosina, S. Selberherr: "Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method"; Talk: International Workshop on Computational Electronics (IWCE), Rome, Italy; 2003-05-25 - 2003-05-28; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2003), 105 - 106. BibTeX |
| 12. | A. Gehring, H. Kosina, T. Grasser, S. Selberherr: "Consistent Comparison of Tunneling Models for Device Simulation"; Poster: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 2003-03-20 - 2003-03-21; in "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6, 131 - 134. BibTeX |
| 11. | A. Gehring, T. Grasser, H. Kosina, S. Selberherr: "An Energy Transport Gate Current Model Based on a Non-Maxwellian Energy Distribution"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Francisco; 2003-02-23 - 2003-02-27; in "Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show", (2003), ISBN: 0-9728422-1-7, 48 - 51. BibTeX |
| 10. | A. Gehring, H. Kosina, S. Selberherr: "Transmission Coefficient Estimation for High-k Gate Stack Evaluation"; Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 2002-09-25 - 2002-09-28; in "Advances in Simulation, Systems Theory, and Systems Engineering", (2002), ISBN: 960-8052-70-x, 156 - 159. BibTeX |
| 9. | A. Gehring, T. Grasser, H. Kosina, S. Selberherr: "A New Gate Current Model Accounting for a Non-Maxwellian Electron Energy Distribution Function"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 235 - 238 doi:10.1109/SISPAD.2002.1034560. BibTeX |
| 8. | T. Grasser, A. Gehring, S. Selberherr: "Macroscopic Transport Models for Microelectronics Devices"; Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; (invited) 2002-07-14 - 2002-07-18; in "The 6th World Multiconference on Systemics, Cybernetics and Informatics", (2002), ISBN: 980-07-8150-1, 223 - 228. BibTeX |
| 7. | A. Gehring, T. Grasser, S. Selberherr: "Non-Parabolicity and Non-Maxwellian Effects on Gate Oxide Tunneling"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 2002-04-21 - 2002-04-25; in "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1, 560 - 563. BibTeX |
| 6. | T. Grasser, A. Gehring, S. Selberherr: "Recent Advances in Transport Modeling for Miniaturized CMOS Devices"; Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Aruba; (invited) 2002-04-17 - 2002-04-19; in "Proceedings of the ICCDCS 2002", (2002), D027, ISBN: 0-7803-7380-4, 1 - 8. BibTeX |
| 5. | A. Gehring, F. Jimenez-Molinos, A. Palma, H. Kosina, S. Selberherr: "Simulation of Non-Volatile Memory Cells by Accounting for Inelastic Trap-Assisted Tunneling Current"; Talk: Workshop on Ultimate Integration of Silicon (ULIS), München; 2002-03-07 - 2002-03-08; in "3rd European Workshop on Ultimate Integration of Silicon", (2002), 15 - 18. BibTeX |
| 4. | A. Gehring, T. Grasser, S. Selberherr: "Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer Matrix Method"; Poster: International Semiconductor Device Research Symposium (ISDRS), Washington; 2001-12-05 - 2001-12-07; in "2001 International Semiconductor Device Research Symposium", (2001), 260 - 263. BibTeX |
| 3. | A. Gehring, C. Heitzinger, T. Grasser, S. Selberherr: "TCAD Analysis of Gain Cell Retention Time for SRAM Applications"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 416 - 419 doi:10.1007/978-3-7091-6244-6_96. BibTeX |
| 2. | A. Gehring, M. Steinbauer, I Gaspard, M. Grigat: "Empirical Channel Stationarity in Urban Environments"; Talk: 4th European Personal Mobile Communications Conference (EPMCC 2001), Vienna, Austria; 2001-02-20 - 2001-02-22; in "Proceedings of the European Personal Mobile Communications Conference", (2001), . BibTeX |
| 1. | J. Broeker, A. Gehring, T. Sauter: "Simulation und Analyse von Single-Clock CMOS FlipFlops."; Talk: Austrochip 2000, Graz; 2000-10-13 in "Tagungsband zur Austrochip 2000", (2000), 61 - 70. BibTeX |
| 4. | T. Ayalew, A. Gehring, T. Grasser, S. Selberherr: "Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Zürich; 2004-10-04 - 2004-10-08; . BibTeX |
| 3. | A. Gehring, S. Selberherr: "Statistical Simulation of Gate Dielectric Wearout, Leakage, and Breakdown"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Zürich; 2004-10-04 - 2004-10-08; . BibTeX |
| 2. | T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr: "Improving SiC Lateral DMOSFET Reliability under High Field Stress"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon; 2003-10-07 - 2003-10-10; . BibTeX |
| 1. | A. Gehring, F. Jimenez-Molinos, H. Kosina, A. Palma, F. Gamiz, S. Selberherr: "Modeling of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM Devices"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon; 2003-10-07 - 2003-10-10; . BibTeX |
| 1. | A. Gehring: "Simulation of Tunneling in Semiconductor Devices"; Reviewer: S. Selberherr, E. Bertagnolli; Institut für Mikroelektronik, 2003, oral examination: 2003-12-05. BibTeX |
| 5. | M. Karner: "Multi-Dimensional Simulation of Closed Quantum Systems"; Supervisor: T. Grasser, A. Gehring; Institut für Mikroelektronik, 2004, . BibTeX |
| 4. | M. Spevak: "Simulation of Rotationally Symmetric Semiconductor Devices"; Supervisor: T. Grasser, A. Gehring; Institut für Mikroelektronik, 2004, . BibTeX |
| 3. | R. Entner: "Three-Dimensional Device Simulation with MINIMOS-NT Using the Wafer-State-Server"; Supervisor: T. Grasser, A. Gehring; Institut für Mikroelektronik, 2003, . BibTeX |
| 2. | M. Zohlhuber: "Visualisierung von Simulationsdaten"; Supervisor: E. Langer, A. Gehring; Institut für Mikroelektronik, 2003, . BibTeX |
| 1. | A. Gehring: "System-Level Simulations for the Time-Division-Duplex Mode of UMTS"; Supervisor: T. Neubauer; E 389, 2000, . BibTeX |
| 4. | A. Gehring, M. Pourfath, E. Ungersböck, S. Wagner, W. Wessner, S. Selberherr: "VISTA Status Report December 2004"; (2004), 32 page(s) . BibTeX |
| 3. | A. Gehring, C. Heitzinger, A. Hössinger, E. Ungersböck, W. Wessner, S. Selberherr: "VISTA Status Report December 2003"; (2003), 29 page(s) . BibTeX |
| 2. | H. Ceric, K. Dragosits, A. Gehring, S. Smirnov, V. Palankovski, S. Selberherr: "VISTA Status Report December 2002"; (2002), 35 page(s) . BibTeX |
| 1. | T. Binder, J. Cervenka, A. Gehring, C. Harlander, C. Heitzinger, S. Selberherr: "VISTA Status Report June 2001"; (2001), 24 page(s) . BibTeX |