Contents

• Kurzfassung
• Abstract
• Acknowledgement
• Contents
• List of Figures
• List of Tables
• List of Algorithms
• List of Abbreviations
• List of Symbols
• 1. Introduction
  • 1.1 Semiconductor Process Technology
  • 1.2 Technology Computer-Aided Design
  • 1.3 Motivation
  • 1.4 Outline of the Thesis
  
  
• 2. Process Modeling
  • 2.1 Continuum Approach
  • 2.2 Transport Kinetics
    • 2.2.1 Reactor-Scale Transport
    • 2.2.2 Feature-Scale Transport
    • 2.2.3 Reemission
  • 2.3 Surface Kinetics
    • 2.3.1 Linear Surface Reactions
    • 2.3.2 Non-Linear Surface Reactions
    • 2.3.3 Transport-Independent Surface Reactions
  
  
• 3. Surface Evolution
  • 3.1 Boundary Evolution Techniques
    • 3.1.1 Segment-Based Methods
    • 3.1.2 Cell-Based Methods
    • 3.1.3 The Level Set Method
  • 3.2 Solving the Level Set Equation
    • 3.2.1 Upwind Scheme
    • 3.2.2 Lax-Friedrichs Scheme
    • 3.2.3 Stability
    • 3.2.4 Surface Velocity Extension
  • 3.3 Approximations to Geometric Variables
    • 3.3.1 Surface Normal
    • 3.3.2 Curvature
  • 3.4 Acceleration Techniques
    • 3.4.1 The Narrow Band Method
    • 3.4.2 The Sparse Field Method
  • 3.5 Level Set Data Structures
    • 3.5.1 Trees
    • 3.5.2 Run-Length Encoding
    • 3.5.3 Dynamic Tubular Grid
    • 3.5.4 Hierarchical Run-Length Encoding
  
  
• 4. A Fast Level Set Framework
  • 4.1 Initialization
    • 4.1.1 Closest Point Transformation
    • 4.1.2 H-RLE Data Structure Setup
  • 4.2 Sequential Data Access
    • 4.2.1 Basic Iterator
    • 4.2.2 Offset Iterator
  • 4.3 Sparse Field Implementation
    • 4.3.1 Time Integration
    • 4.3.2 Pruning and Consistency Check
    • 4.3.3 Dilation
  • 4.4 Boolean Operations
    • 4.4.1 Implementation
    • 4.4.2 Chemical-Mechanical Planarization
    • 4.4.3 Pattern Transfer
  • 4.5 Smoothing
  • 4.6 Multiple Material Regions
    • 4.6.1 Level Set Representation
    • 4.6.2 Time Evolution
    • 4.6.3 Isotropic Material Dependent Etching
  • 4.7 Directional Visibility Check
    • 4.7.1 Directional Etching
    • 4.7.2 Simple Bosch Process Simulation
  • 4.8 Void Detection
    • 4.8.1 Connected Components
    • 4.8.2 Graph Setup Algorithm
    • 4.8.3 Algorithmic Complexity
    • 4.8.4 Preservation of Voids
    • 4.8.5 Isotropic Deposition
    • 4.8.6 Isotropic Etching
  • 4.9 Surface Extraction
  • 4.10 Parallelization
    • 4.10.1 Parallelization Strategy
    • 4.10.2 Data Access
    • 4.10.3 Benchmarks
  
  
• 5. Surface Rate Calculation
  • 5.1 Conventional Approach
    • 5.1.1 Algorithmic Complexity
    • 5.1.2 Limitations
  • 5.2 Ray Tracing
    • 5.2.1 Surface Representation
    • 5.2.2 Tangential Disks
    • 5.2.3 Particle Traversal
    • 5.2.4 Algorithmic Complexity
    • 5.2.5 Boundary Conditions
    • 5.2.6 Spatial Subdivision
    • 5.2.7 Splitting Strategies
    • 5.2.8 Neighbor Links Arrays
    • 5.2.9 Parallelization
    • 5.2.10 Benchmarks
  • 5.3 Generation of Random Vectors
    • 5.3.1 Power Cosine Distribution
    • 5.3.2 Coned Cosine Distribution
    • 5.3.3 Direction Vector Calculation
    • 5.3.4 Cosine Distribution
    • 5.3.5 Direction Vector Sampling Benchmarks
  • 5.4 Implementation Details
    • 5.4.1 Simulation Flow
    • 5.4.2 Model Implementation
  
  
• 6. Applications
  • 6.1 Chemical Vapor Deposition
  • 6.2 Plasma Etching
  • 6.3 Anisotropic Wet Etching
  • 6.4 Bosch Process
    • 6.4.1 Process Time Variations
    • 6.4.2 Lag Effect
  • 6.5 Focused Ion Beam Processing
  
  
• 7. Summary and Outlook
• A. Line-Triangle Intersection
• B. Ray-Isosurface Intersection
  • B.1 Setup of the Polynomial
  • B.2 Root Finding
  
  
• C. Inequalities
• Bibliography
• List of Publications
• Curriculum Vitae