Conference Presentations
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Publication list for members of
E360 - Institute for Microelectronics
as any persons named in the publication record
2089 records
Talks and Poster Presentations (with or without Proceedings-Entry)
| 2089. | F. Rodrigues, L.F. Aguinsky, A. Hössinger, J. Weinbub: "3D Feature-Scale Modeling of Highly Selective Fluorocarbon Plasma Etching"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 32 - 33. BibTeX |
| 2088. | L. Filipovic: "A Broadly-Applicable Ensemble Monte Carlo Framework"; Talk: Workshop Monte Carlo Simulation: Beyond Moore's LAW, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Spain; (invited) 05.09.2022. BibTeX |
| 2087. | L. Cvitkovich, D. Waldhör, A.-M. El-Sayed, M. Jech, C. Wilhelmer, T. Grasser: "Ab-Initio Modeling of the Initial Stages of Si(100) Thermal Oxidation"; Poster: Psi-K Conference (Psi-K) 2022, Lausanne, Schwitzerland; 22.08.2022 - 25.08.2022; in "PSI-K 2022: abstracts book", (2022), 209. BibTeX |
| 2086. | C. Wilhelmer, D. Waldhör, M. Jech, A.-M. El-Sayed, L. Cvitkovich, M. Waltl, T. Grasser: "Ab-Initio Study of Multi-State Defects in Amorphous SiO2"; Talk: Psi-K Conference (Psi-K) 2022, Lausanne, Schwitzerland; 22.08.2022 - 25.08.2022; in "PSI-K 2022: abstracts book", (2022), 264. BibTeX |
| 2085. | S. Selberherr, V. Sverdlov: "About Electron Transport and Spin Control in Semiconductor Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; (invited) 06.09.2022 - 08.09.2022; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 1 - 4. BibTeX |
| 2084. | R. Orio, J. Ender, W. Goes, S. Fiorentini, S. Selberherr, V. Sverdlov: "About the Switching Energy of a Magnetic Tunnel Junction determined by Spin-Orbit Torque and Voltage-Controlled Magnetic Anisotropy"; Talk: 2022 IEEE Latin American Electron Devices Conference (LAEDC), Puebla, Mexico; 04.06.2022 - 06.06.2022; in "2022 IEEE Latin American Electron Devices Conference (LAEDC)", (2022), ISBN: 978-1-6654-9768-8, 1 - 4 doi:10.1109/LAEDC54796.2022.9908222. BibTeX |
| 2083. | C. Lenz, P. Manstetten, A. Hössinger, J. Weinbub: "Automatic Grid Refinement for Thin Material Layer Etching in Process TCAD Simulations"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 11 - 12. BibTeX |
| 2082. | D. Milardovich, D. Waldhör, M. Jech, A.-M. El-Sayed, T. Grasser: "Building Robust Machine Learning Force Fields by Composite Gaussian Approximation Potentials"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 61 - 62. BibTeX |
| 2081. | Yu. Illarionov, B. Uzlu, T. Knobloch, A. Banshchikov, V. Sverdlov, M. Vexler, N. S. Sokolov, M. Waltl, Z. Wang, D. Neumaier, M. Lemme, T. Grasser: "CVD-GFETs with Record-small Hysteresis Owing to 2nm Epitaxial CaF2 Insulators"; Talk: Device Research Conference (DRC), Columbus, OH; 26.06.2022 - 29.06.2022; in "Proceedings of the Device Research Conference (DRC)", (2022), ISBN: 978-1-6654-9883-8, 121 - 122. BibTeX |
| 2080. | S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov: "Comprehensive Evaluation of Torques in Ultra Scaled MRAM Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 11 - 12. BibTeX |
| 2079. | L. Filipovic, O. Baumgartner, J. Piso, J. Bobinac, T. Reiter, G. Strof, G. Rzepa, Z. Stanojevic, M. Karner: "DTCO Flow for Air Spacer Generation and its Impact on Power and Performance at N7"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 34 - 35. BibTeX |
| 2078. | S. Fiorentini, W.J. Loch, M. Bendra, N. Jørstad, J. Ender, R. Orio, T. Hadámek, W. Goes, V. Sverdlov, S. Selberherr: "Design Analysis of Ultra-Scaled MRAM Cells"; Talk: 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, Nanjing, China; (invited) 25.10.2022 - 28.10.2022; in "Proceedings of 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)", (2022), ISBN: 978-1-6654-6905-0, . BibTeX |
| 2077. | A. Saleh, H. Zahedmanesh, H. Ceric, K. Croes, I. De Wolf: "Dynamics of Electromigration Voids in Cu Interconnects: Investigation Using a Physics-Based Model Augmented by Neural Networks"; Talk: IEEE International Interconnect Technology Conference (IITC), San Jose, USA; 27.06.2022 - 30.06.2022; in "2022 IEEE International Interconnect Technology Conference (IITC)", (2022), ISBN: 978-1-6654-8646-0, 22 - 27 doi:10.1109/IITC52079.2022.9881303. BibTeX |
| 2076. | V. Sverdlov, H. Seiler, A.-M. El-Sayed, Yu. Illarionov, H. Kosina, S. Selberherr: "Edge Modes in Narrow Nanoribbons of Transition Metal Dichalcogenides in a Topological 1T"; Talk: International Conference on Physics and its Application, San Francisco, USA; (invited) 18.07.2022 - 21.07.2022; in "International Conference on Physics and its Application 2022", (2022), 36 - 37. BibTeX |
| 2075. | M. Ballicchia, M. Nedjalkov, J. Weinbub: "Electromagnetic Control of Electron Interference"; Poster: CECAM Flagship Workshop on Quantum Transport Methods and Algorithms: From Particles to Waves Approaches, Zurich; 06.07.2022 - 08.07.2022; in "Book of Abstracts of the CECAM Flagship Workshop on Quantum Transport Methods and Algorithms: From Particles to Waves Approaches", (2022), 15. BibTeX |
| 2074. | H. Ceric, R. Orio, S. Selberherr: "Electromigration Degradation of Gold Interconnects: A Statistical Study"; Talk: IEEE International Interconnect Technology Conference (IITC), San Jose, California,; 27.06.2022 - 30.06.2022; in "2022 IEEE International Interconnect Technology Conference (IITC)", (2022), 102 - 104 doi:10.1109/IITC52079.2022.9881313. BibTeX |
| 2073. | V. Sverdlov, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, W. Goes, S. Selberherr: "Emerging Devices for Digital Spintronics"; 2nd Global Conference & Expo on Nanotechnology & Nanoscience, online; (invited) 25.05.2022 - 26.05.2022; in "2nd Global Conference & Expo on Nanotechnology & Nanoscience", (2022), 32 - 33. BibTeX |
| 2072. | T. Knobloch: "Enhancing the Reliability of 2D Nanoelectronics Guided by Physical Modeling"; Talk: Workshop Monte Carlo Simulation: Beyond Moore's LAW, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Spain; 05.09.2022. BibTeX |
| 2071. | T. Knobloch, Yu. Illarionov, T. Grasser: "Enhancing the Stability of 2D Material-Based Transistors via Fermi-Level Tuning"; Talk: Graphene Week 2022, Munich, Germany; (invited) 05.09.2022 - 09.09.2022; in "Abstracts of Graphene Week 2022", (2022), . BibTeX |
| 2070. | T. Knobloch, Yu. Illarionov, T. Grasser: "Finding Suitable Gate Insulators for Reliable 2D FETs"; Talk: International Reliability Physics Symposium (IRPS), Dallas, USA; (invited) 27.03.2022 - 31.03.2022; in "2022 IEEE International Reliability Physics Symposium (IRPS) : proceedings : March 27-31, 2022, Dallas, Texas / IEEE", (2022), ISBN: 978-1-6654-7950-9, 2A.1-1 - 2A.1-10 doi:10.1109/IRPS48227.2022.9764499. BibTeX |
| 2069. | Yu. Illarionov, T. Knobloch, B. Uzlu, N. S. Sokolov, M. Lemme, T. Grasser: "Highly stable GFETs with 2nm crystalline CaF2 insulators"; Talk: 6th International Conference on Physics of 2D materials based electronics and optoelectronics (ICP2DC6, 2022), Yerevan, Armenia; 09.10.2022 - 14.10.2022; . BibTeX |
| 2068. | H. Ceric, R. Orio, S. Selberherr: "Impact of Gold Interconnect Microstructure on Electromigration Failure Time Statistics"; Talk: IEEE European Solid-State Device Research Conference (ESSDERC), Milan, Italy; 20.09.2022 - 22.09.2022; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2022), ISBN: 978-1-6654-8496-1, 301 - 303. BibTeX |
| 2067. | J. Bobinac, T. Reiter, J. Piso, X. Klemenschits, O. Baumgartner, Z. Stanojevic, G. Strof, M. Karner, L. Filipovic: "Impact of Mask Tapering on SF6/O2 Plasma Etching"; Talk: Fourth International Conference on Microelectronic Devices and Technologies (MicDAT '2022), Corfu, Greece; 21.09.2022 - 23.09.2022; in "Microelectronic Devices and Technologies: Proceedings of the 4rd International Conference on Microelectronic Devices and Technologies (MicDAT '2022)", (2022), ISBN: 978-84-09-43856-3, 90 - 94. BibTeX |
| 2066. | M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, W. Goes, S. Selberherr: "Interface Effects in Ultra-Scaled MRAM Cells"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Udine, Italy; 18.05.2022 - 20.05.2022; in "Proceedings of the Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)", (2022), . BibTeX |
| 2065. | D. Milardovich, M. Jech, D. Waldhör, A.-M. El-Sayed, T. Grasser: "Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide"; Talk: Psi-K Conference (Psi-K) 2022, Lausanne, Schwitzerland; 22.08.2022 - 25.08.2022; in "PSI-K 2022: abstracts book", (2022), 138. BibTeX |
| 2064. | H. Ceric, R. Orio, S. Selberherr: "Microstructural Impact on Electromigration Reliability of Gold Interconnects"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 178 - 179. BibTeX |
| 2063. | V. Sverdlov, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, S. Selberherr: "Modeling Advanced Magnetoresistive Memory: A Journey from Finite Element Methods to Machine Learning Approaches"; 2 nd Global Webinar on Nanoscience & Nanotechnology, online; (invited) 14.03.2022 - 15.03.2022; in "2nd Global Webinar on Nanoscience & Nanotechnology", (2022), . BibTeX |
| 2062. | V. Sverdlov, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, W. Goes, S. Selberherr: "Modeling Advanced Spintronic Based Magnetoresistive Memory"; Talk: International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022), Yerevan, Armenia; (invited) 27.09.2022 - 29.09.2022; in "Book of Abstracts of the International Conference on Microwave & THz Technologies and Optoelectronics (IRPhE)", (2022), . BibTeX |
| 2061. | V. Sverdlov, W. Loch, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, N. Jorstad, W. Goes, S. Selberherr: "Modeling Approach to Ultra-Scaled MRAM Cells"; Talk: ASETMEET2022 International Meet On Applied Science, Engineering and Technology, Taastrup, Copenhagen; (invited) 23.06.2022 - 25.06.2022; in "Book of Abstracts of the International Meet On Applied Science, Engineering and Technology (ASETMEET)", (2022), 7 - 8. BibTeX |
| 2060. | N. Jørstad, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov: "Modeling Interfacial and Bulk Spin-Orbit torques"; Talk: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 06.06.2022 - 10.06.2022; in "Book of Abstracts of the International Conference on Nanostructured Materials (NANO)", (2022), . BibTeX |
| 2059. | L.F. Aguinsky, F. Rodrigues, X. Klemenschits, L. Filipovic, A. Hössinger, J. Weinbub: "Modeling Non-Ideal Conformality during Atomic Layer Deposition in High Aspect Ratio Structures"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 40 - 41. BibTeX |
| 2058. | T. Hadámek, W. Goes, S. Selberherr, V. Sverdlov: "Modeling Thermal Effects in STT-MRAM"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 11 - 12. BibTeX |
| 2057. | V. Sverdlov: "Modeling Ultra-Scaled Magnetoresistive Memory Cells"; 3rd Global Webinar on Nanoscience & Nanotechnology, online; (invited) 18.07.2022 in "3rd Global Webinar on Nanoscience & Nanotechnology", (2022), . BibTeX |
| 2056. | M. Ballicchia, M. Nedjalkov, J. Weinbub: "Monte Carlo Approach for Solving Integral Equations: From Classical-Boltzmann to Quantum-Wigner Particles"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Spain; (invited) 05.09.2022. BibTeX |
| 2055. | J. Weinbub, M. Ballicchia, M. Nedjalkov: "Quantum Transport in Phase Space: Introduction and Applications"; Talk: Summer School on Methods and Models of Kinetic Theory, Pesaro, Italy; (invited) 12.06.2022 - 18.06.2022; . BibTeX |
| 2054. | H. Kosina: "Recent Developments in Semiclassical Transport: Backward Monte Carlo and Electron-Electron Scattering"; Talk: Workshop Monte Carlo Simulation: Beyond Moore's LAW, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Spain; 05.09.2022. BibTeX |
| 2053. | T. Knobloch, T. Grasser: "Scalable and Reliable Gate Insulators for 2D Material-Based FETs"; Talk: IEEE Latin America Electron Devices Conference (LAEDC), Puebla, Mexico; (invited) 04.07.2022 - 06.07.2022; . BibTeX |
| 2052. | M. Quell, A. Hössinger, J. Weinbub: "Shared-Memory Fast Marching Method for Re-Distancing on Hierarchical Meshes"; Talk: Austrian-Slovenian HPC Meeting (ASHPC), Grundlsee; 31.05.2022 - 02.06.2022; in "Book of Abstracts of the Austrian-Slovenian HPC Meeting (ASHPC)", (2022), ISBN: 978-3-200-08499-5, 1 page(s) doi:10.25365/phaidra.337. BibTeX |
| 2051. | W.J. Loch, S. Selberherr, V. Sverdlov: "Simulation of Novel MRAM Devices with Enhanced Performance"; Talk: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 06.06.2022 - 10.06.2022; in "Book of Abstracts of the International Conference on Nanostructured Materials (NANO)", (2022), . BibTeX |
| 2050. | S. Fiorentini, M. Bendra, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov: "Spin Torques in ULTRA-Scaled MRAM Devices"; Talk: IEEE European Solid-State Device Research Conference (ESSDERC), Mailand; 20.09.2022 - 22.09.2022; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2022), ISBN: 978-1-6654-8496-1, 348 - 351. BibTeX |
| 2049. | S. Fiorentini, J. Ender, S. Selberherr, W. Goes, V. Sverdlov: "Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach"; Talk: 26th World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI 2022), online; 12.07.2022 - 15.07.2022; in "The 26th World Multi-Conference on Systemics, Cybernetics and Informatics: WMSCI 2022. Proceedings Volume II", (2022), 20, 4, 40 - 44. BibTeX |
| 2048. | M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, S. Selberherr, W. Goes, V. Sverdlov: "Spin Transfer Torques in Ultra-Scaled MRAM Cells"; Talk: MIPRO 2022, Opatija, Croatia; 23.05.2022 - 27.05.2022; in "2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO)", (2022), ISBN: 978-953-233-103-5, 129 - 132. BibTeX |
| 2047. | L. Gollner, R. Steiner, L. Filipovic: "Study of Phonon-limited Electron Transport in Monolayer MoS2"; Talk: Fourth International Conference on Microelectronic Devices and Technologies (MicDAT '2022), Corfu, Greece; 21.09.2022 - 23.09.2022; in "Microelectronic Devices and Technologies Proceedings of the 4rd International Conference on Microelectronic Devices and Technologies (MicDAT 2022)", (2022), ISBN: 978-84-09-43856-3, 74 - 78. BibTeX |
| 2046. | T. Hadámek, S. Fiorentini, M. Bendra, R. Orio, W.J. Loch, N. Jorstad, S. Selberherr, W. Goes, V. Sverdlov: "Temperature Modeling in STT-MRAM:A Fully Three-Dimensional Finite Element Approach"; Talk: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 06.06.2022 - 10.06.2022; in "Book of Abstracts of the International Conference on Nanostructured Materials (NANO)", (2022), . BibTeX |
| 2045. | M. Jech, T. Grasser, M. Waltl: "The Importance of Secondary Generated Carriers in Modeling of Full Bias Space"; Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), online; 06.03.2022 - 09.03.2022; in "2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)", (2022), 265 - 267 doi:10.1109/EDTM53872.2022.9798262. BibTeX |
| 2044. | Yu. Illarionov, T. Knobloch, M. Waltl, Q. Smets, L. Panarella, B. Kaczer, T. Schram, S. Brems, D. Cott, I. Asselberghs, T. Grasser: "Top Gate Length Dependence of Hysteresis in 300mm FAB MoS2 FETs"; Talk: Graphne 2022, Aachen, Germany; 05.07.2022 - 08.07.2022; . BibTeX |
| 2043. | M. Stephanie, M. Waltl, T. Grasser, B. SchrenkSchrenk: "WDM-Conscious Synaptic Receptor Assisted by SOA+EAM"; Talk: 2022 Optical Fiber Communications Conference and Exhibition (OFC), San Diego, California, USA; 05.03.2022 - 09.03.2022; in "2022 Optical Fiber Communications Conference and Exhibition (OFC)", (2022), . BibTeX |
| 2042. | M. Ballicchia, M. Nedjalkov, J. Weinbub: "Wigner Dynamics of Electron Quantum Superposition States in a Confined and Opened Quantum Dot"; Talk: 22nd IEEE International Conference on Nanotechnology, Palma de Mallorca, Sapin; 04.07.2022 - 08.07.2022; in "2022 IEEE 22nd International Conference on Nanotechnology (NANO)", (2022), 565 - 568 doi:10.1109/NANO54668.2022.9928753. BibTeX |
| 2041. | J. Weinbub: "Wigner Signed Particles for Electron Quantum Optics"; Talk: UW-Madison's Grainger Institute Computing in Engineering Forum, USA; (invited) 20.09.2022 - 21.09.2022; . BibTeX |
| 2040. | J. Weinbub: "Wigner Signed-Particles: Computational Challenges and Simulation Opportunities"; Talk: CECAM Flagship Workshop on Quantum Transport Methods and Algorithms: From Particles to Waves Approaches, Zurich; (invited) 06.07.2022 - 08.07.2022; in "Book of Abstracts of the CECAM Flagship Workshop on Quantum Transport Methods and Algorithms: From Particles to Waves Approaches", (2022), 1 page(s) . BibTeX |
| 2039. | A.-M. El-Sayed, H. Seiler, H. Kosina, S. Selberherr, V. Sverdlov: "Ab-initio Calculations of Edge States in Topological 1T′ MoS2 Nanoribbons"; Talk: 2021 Workshop on Innovative Nanoscale Devices and Systems (WINDS2021), Hawaii, USA; 28.11.2021 - 03.12.2021; in "WINDS Book of Abstracts", (2021), ISBN: 978-3-9504738-3-4, 79 - 80. BibTeX |
| 2038. | J. Ender, S. Fiorentini, R. Orio, T. Hadámek, M. Bendra, W. Goes, S. Selberherr, V. Sverdlov: "Advanced Modeling of Emerging MRAM: From Finite Element Methods to Machine Learning Approaches"; Talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia; (invited) 04.10.2021 - 08.10.2021; in "Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE)", (2021), ISBN: 978-5-317-06675-8, . BibTeX |
| 2037. | J. Ender, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov: "Advanced Modeling of Emerging Nonvolatile Magnetoresistive Devices"; Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); (invited) 24.05.2021 - 06.06.2021; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 45 - 46. BibTeX |
| 2036. | T. Hadámek, S. Selberherr, W. Goes, V. Sverdlov: "Asymmetry of Current-Induced Heating in Magnetic Tunnel Junctions"; Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 49 - 50. BibTeX |
| 2035. | J. Franco, J. Marneffe, A. Vandooren, Y. Kimura, L. Nyns, Z. Wu, A.-M. El-Sayed, M. Jech, D. Waldhör, D. Claes, H. Arimura, L. Ragnarsson, V. Afanas´Ev, N. Horiguchi, D. Linten, T. Grasser, B. Kaczer: "Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 12.12.2021 - 18.12.2021; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2021), ISBN: 978-1-7281-8888-1, 31.2.1 - 31.2.4 doi:10.1109/IEDM13553.2020.9372054. BibTeX |
| 2034. | V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr: "Ballistic Conductance, k. p Hamiltonian, Nanoribbons, Subbands, Topological Insulators (TIs), Topologically Protected Edge States"; Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 13.09.2021 - 17.09.2021; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC), TEDbrief Special Edition", (2021), . BibTeX |
| 2033. | T. Grasser, B. O´Sullivan, B. Kaczer, J. Franco, B. Stampfer, M. Waltl: "CV Stretch-Out Correction after Bias Temperature Stress: Work-function Dependence of Donor-/Acceptor-like Traps, Fixed Charges, and Fast States"; Talk: IEEE International Reliability Physics Symposium (IRPS), virtual; 21.03.2021 - 24.03.2021; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2021), ISBN: 978-1-7281-6893-7, 1 - 6 doi:10.1109/IRPS46558.2021.9405184. BibTeX |
| 2032. | X. Klemenschits, S. Selberherr, L. Filipovic: "Combined Process Simulation and Emulation of an SRAM Cell of the 5nm Technology Node"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), 23 - 27 doi:10.1109/SISPAD54002.2021.9592605. BibTeX |
| 2031. | V. Sverdlov, H. Seiler, A.-M. El-Sayed, H. Kosina: "Conductance of Edge Modes in Nanoribbons of 2D Materials in a Topological Phase"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 52 - 53. BibTeX |
| 2030. | Yu. Illarionov, T. Knobloch, T. Grasser: "Crystalline Insulators for Scalable 2D Nanoelectronics"; Talk: International Conference on Insulating Films on Semiconductors (INFOS), Rende (CS), Italy; (invited) 29.06.2021 - 02.07.2021; . BibTeX |
| 2029. | C. Lenz, A. Toifl, A. Hössinger, J. Weinbub: "Curvature-Based Feature Detection for Hierarchical Grid Refinement in Epitaxial Growth Simulations"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 109 - 110. BibTeX |
| 2028. | S. Fiorentini, M. Bendra, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov: "Design Support for Ultra-Scaled MRAM Cells"; Poster: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 13.12.2021 - 15.12.2021; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM", (2021), 1 page(s) . BibTeX |
| 2027. | S. Naz, A. Shah, S. Ahmed, G. Patrick, M. Waltl: "Design of Fault-Tolerant and Thermally Stable XOR Gate in Quantum dot Cellular Automata"; Poster: IEEE European Test Symposium (ETS), Bruges, Belgium (Virtual); 24.05.2021 - 28.05.2021; in "Proceedings of the IEEE European Test Symposium (ETS)", (2021), doi:10.1109/ETS50041.2021.9465459. BibTeX |
| 2026. | R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov: "Deterministic Spin-Orbit Switching Scheme for an Array of Perpendicular MRAM Cells Suitable for Large Scale Integration"; Talk: Trends in Magnetism (TMAG), Cefalù, Italy; 06.09.2021 - 10.09.2021; in "Proceedings of the Trends in Magnetism Conference (TMAG)", (2021), . BibTeX |
| 2025. | N. Jørstad, S. Fiorentini, W. Goes, V. Sverdlov: "Efficient Finite Element Method Approach to Model Spin Orbit Torque MRAM"; Talk: International MOS-AK Workshop, Silicon Valley, USA; 17.12.2021 in "Proceedings of the 14th International MOS-AK Workshop", (2021), 1. BibTeX |
| 2024. | J. Weinbub, M. Ballicchia, M. Nedjalkov, S. Selberherr: "Electromagnetic Coherent Electron Control"; Talk: IEEE Latin America Electron Devices Conference (LAEDC), virtual; (invited) 19.04.2021 - 21.04.2021; in "Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC)", (2021), ISBN: 978-1-6654-1510-1, 1 - 4 doi:10.1109/LAEDC51812.2021.9437949. BibTeX |
| 2023. | J. Weinbub, M. Ballicchia, M. Nedjalkov: "Electron Quantum Optics for Quantum Interference Logic Devices"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Hawaii, USA; 28.11.2021 - 03.12.2021; in "WINDS Book of Abstracts", (2021), ISBN: 978-3-9504738-3-4, 58 - 59. BibTeX |
| 2022. | J. Ender, R. Orio, V. Sverdlov: "Enhancing SOT-MRAM Switching Using Machine Learning"; Talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual; (invited) 14.10.2021 in "Proceedings of the Silvaco Users Global Event (SURGE)", (2021), 1. BibTeX |
| 2021. | Yu. Illarionov, A. Banshchikov, N. S. Sokolov, V. V. Fedorov, S. M. Suturin, M. I. Vexler, T. Knobloch, D.K Polyushkin, T. Mueller, T. Grasser: "Epitaxial Fluorides as a Universal Platform for More Moore and More than Moore Electronics Based on 2D Materials"; Talk: Scientific Council Meeting of the Russian Academy of Sciences, Moscow, Russia; (invited) 08.04.2021. BibTeX |
| 2020. | C. Lenz, A. Scharinger, M. Quell, P. Manstetten, A. Hössinger, J. Weinbub: "Evaluating Parallel Feature Detection Methods for Implicit Surfaces"; Talk: Austrian-Slovenian HPC Meeting (ASHPC), Maribor, Slovenia (Virtual); 31.05.2021 - 02.06.2021; in "Book of Abstracts of the Austrian-Slovenian HPC Meeting (ASHPC)", (2021), 31. BibTeX |
| 2019. | J. Michl, A. Grill, D. Waldhör, C. Schleich, T. Knobloch, E. Ioannidis, H. Enichlmair, R. Minixhofer, B. Kaczer, B. Parvais, B. Govoreanu, I. Radu, T. Grasser, M. Waltl: "Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 11.12.2021 - 15.12.2021; in "2021 IEEE International Electron Devices Meeting (IEDM)", (2021), 31.3.1 - 31.3.3 doi:10.1109/IEDM19574.2021.9720501. BibTeX |
| 2018. | L. Filipovic, X. Klemenschits: "Fast Model for Deposition in Trenches using Geometric Advection"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), 224 - 228 doi:10.1109/SISPAD54002.2021.9592595. BibTeX |
| 2017. | F. Rodrigues, L.F. Aguinsky, A. Toifl, A. Hössinger, J. Weinbub: "Feature Scale Modeling of Fluorocarbon Plasma Etching for Via Structures including Faceting Phenomena"; Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 101 - 102. BibTeX |
| 2016. | L.F. Aguinsky, G. Wachter, A. Scharinger, F. Rodrigues, A. Toifl, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub: "Feature-Scale Modeling of Isotropic SF6 Plasma Etching of Si"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 54 - 55. BibTeX |
| 2015. | M. Bendra, J. Ender, S. Fiorentini, T. Hadámek, R. Orio, W. Goes, S. Selberherr, V. Sverdlov: "Finite Element Method Approach to MRAM Modeling"; Talk: International Convention on Information, Communication and Electronic Technology (MIPRO), Opatija, Croatia; 27.09.2021 - 01.10.2021; in "Proceedings of the International Convention on Information, Communication and Electronic Technology (MIPRO)", (2021), ISBN: 978-953-233-101-1, 70 - 73 doi:10.23919/MIPRO52101.2021.9597194. BibTeX |
| 2014. | A.-M. El-Sayed, H. Seiler, H. Kosina, V. Sverdlov: "First Principles Approach to Study Topologically Protected Edge States in 1T′ MoS2 Nanoribbons"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 113 - 114. BibTeX |
| 2013. | L. Filipovic, S. Selberherr: "Gas Sensing with Two-Dimensional Materials Beyond Graphene"; Talk: International Conference on Microelectronics (MIEL), Nis, Serbia; (invited) 12.09.2021 - 14.09.2021; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2021), ISBN: 978-1-6654-4526-9, 29 - 36 doi:10.1109/MIEL52794.2021.9569088. BibTeX |
| 2012. | T. Hadámek, S. Selberherr, W. Goes, V. Sverdlov: "Heating Asymmetry in Magnetoresistive Random Access Memories"; Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA (Virtual); 18.07.2021 - 21.07.2021; in "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2021), ISBN: 978-1-950492-55-8, 63 - 66. BibTeX |
| 2011. | M. Waltl: "Impact of Defects in Semiconductor Transistors on Devices and Circuits"; Talk: International Meet on Nanotechnology (NANOMEET), Porto, Portugal; (invited) 13.09.2021 - 15.09.2021; in "Proceedings of the International Meet on Nanotechnology (NANOMEET)", (2021), 93. BibTeX |
| 2010. | T. Reiter, X. Klemenschits, L. Filipovic: "Impact of High-Aspect-Ratio Etching Damage on Selective Epitaxial Silicon Growth in 3D NAND Flash Memory"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 34 - 35. BibTeX |
| 2009. | M. Kampl, H. Kosina, M. Waltl: "Improved Sampling Algorithms for Monte Carlo Device Simulation"; Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 53 - 54. BibTeX |
| 2008. | J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Gös, V. Sverdlov: "Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux, France; 04.10.2021 - 07.10.2021; in "Proceedings of the 32nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2021), ISSN: 0026-2714, 1 - 4 doi:10.1016/j.microrel.2021.114231. BibTeX |
| 2007. | J. Franco, J. Marneffe, A. Vandooren, H. Arimura, L. Ragnarsson, D. Claes, E. D. Litta, N. Horiguchi, K. Croes, D. Linten, T. Grasser, B. Kaczer: "Low Temperature Atomic Hydrogen Treatment for Superior NBTI Reliability -- Demonstration and Modeling across SiO2 IL Thicknesses from 1.8 to 0.6 nm for I/O and Core Logic"; Talk: International Symposium on VLSI Technology, Kyoto, Japan; 13.06.2021 - 19.06.2021; in "2021 Symposium on VLSI Technology (VLSIT)", (2021), ISBN: 978-1-6654-1945-1, 1 - 2. BibTeX |
| 2006. | D. Milardovich, M. Jech, D. Waldhör, A.-M. El-Sayed, T. Grasser: "Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide"; Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 13.09.2021 - 22.09.2021; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), ISBN: 978-1-6654-3748-6, 239 - 242 doi:10.1109/ESSDERC53440.2021.9631837. BibTeX |
| 2005. | M. Ballicchia, M. Benam, M. Nedjalkov, S. Selberherr, J. Weinbub: "Modeling Coulomb Interaction with a 'Wigner-Poisson' Coupling Scheme"; Talk: International Wigner Workshop (IW2), Daejeon, Korea (Virtual); 17.05.2021 - 21.05.2021; in "Book of Abstracts of the International Wigner Workshop (IW2)", (2021), ISBN: 978-3-9504738-2-7, 64 - 65. BibTeX |
| 2004. | L. Filipovic: "Modeling and Simulation of ALD in a Level Set Framework"; Talk: EFDS Workshop on Simulation for ALD, virtual; (invited) 25.03.2021 in "Proceedings of the EFDS Workshop on Simulation for ALD", (2021), 9. BibTeX |
| 2003. | J. Weinbub: "Modeling and Simulation of Two-Dimensional Single-Electron Control"; Talk: International Meet on Nanotechnology (NANOMEET), Porto, Portugal; (invited) 13.09.2021 - 15.09.2021; in "Proceedings of the International Meet on Nanotechnology (NANOMEET)", (2021), . BibTeX |
| 2002. | J. Weinbub: "Modeling and Simulation of Two-Dimensional Single-Electron Dynamics"; Talk: Global Summit on Condensed Matter Physics (CONMAT), Valencia, Spain (virtual); (invited) 18.10.2021 - 20.10.2021; in "Proceedings of the Global Summit on Condensed Matter Physics (CONMAT)", (2021), . BibTeX |
| 2001. | L. Cvitkovich, M. Jech, D. Waldhör, A.-M. El-Sayed, C. Wilhelmer, T. Grasser: "Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface"; Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 13.09.2021 - 22.09.2021; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), ISBN: 978-1-6654-3748-6, 235 - 238 doi:10.1109/ESSDERC53440.2021.9631790. BibTeX |
| 2000. | J. Franco, H. Arimura, J. Marneffe, A. Vandooren, L. Ragnarsson, Z. Wu, D. Claes, E. D. Litta, N. Horiguchi, K. Croes, D. Linten, T. Grasser, B. Kaczer: "Novel Low Thermal Budget Gate Stack Solutions for BTI Reliability in Future Logic Device Technologies"; Talk: IEEE International Conference on IC Design and Technology (ICICDT), Dresden, Germany; 15.09.2021 - 17.09.2021; in "Proceedings of IEEE International Conference on IC Design and Technology", (2021), ISBN: 978-1-6654-4998-4, 1 - 4 doi:10.1109/ICICDT51558.2021.9626482. BibTeX |
| 1999. | H. Kosina, H. Seiler, V. Sverdlov: "Numerical Calculation of the Transverse Modes in 1T' MoS2 Nanoribbons"; Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 2 - 3. BibTeX |
| 1998. | R. Kosik, J. Cervenka, H. Kosina: "Open Boundary Conditions for the Wigner and the Characteristic von Neumann Equation"; Talk: International Wigner Workshop (IW2), Daejeon, Korea (Virtual); 17.05.2021 - 21.05.2021; in "Book of Abstracts of the International Wigner Workshop (IW2)", (2021), ISBN: 978-3-9504738-2-7, 42 - 43. BibTeX |
| 1997. | C. Wen, Yu. Illarionov, W. Frammelsberger, T. Knobloch, T. Grasser, M. Lanza: "Outstanding Dielectric Properties of Ultra-thin CaF2 Dielectric Films"; Talk: APS March Meeting, College Park, MD, USA; 15.03.2021 - 19.03.2021; in "Bulletin of the American Physical Society", (2021), . BibTeX |
| 1996. | F. Ribeiro, K. Rupp, T. Grasser: "Parallel Solver Study for Solving the Boltzmann Transport Equation using Spherical Harmonics Expansions on Supercomputers"; Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 97 - 98. BibTeX |
| 1995. | J. Ender, S. Fiorentini, V. Sverdlov, W. Goes, R. Orio, S. Selberherr: "Reinforcement Learning Approach for Deterministic SOT-MRAM Switching"; Talk: SPIE Spintronics, San Diego, CA, USA - virtual; (invited) 01.08.2021 - 05.08.2021; in "Proceedings of SPIE Spintronics", (2021), 11805-53. BibTeX |
| 1994. | J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov: "Reinforcement Learning Approach for Sub-Critical Current SOT-MRAM Switching Materials"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), 150 - 154 doi:10.1109/SISPAD54002.2021.9592561. BibTeX |
| 1993. | J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov: "Reinforcement Learning to Reduce Failures in SOT-MRAM Switching"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 15.09.2021 - 15.10.2021; in "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2021), ISBN: 978-1-6654-3988-6, doi:10.1109/IPFA53173.2021.9617362. BibTeX |
| 1992. | L. Filipovic: "Reliability and Stability of MEMS Microheaters for Gas Sensors"; Talk: IEEE International Integrated Reliability Workshop (IIRW), online; (invited) 04.10.2021 - 28.10.2021; in "2021 IEEE International Integrated Reliability Workshop (IIRW)", (2021), ISBN: 978-1-6654-1794-5, doi:10.1109/IIRW53245.2021.9635162. BibTeX |
| 1991. | J. Weinbub, M. Ballicchia, M. Nedjalkov: "Single Electron Control for Quantum Interference Devices"; Talk: Summer School on Methods and Models of Kinetic Theory - Winter Prelude, Porto Ercole, Italy - virtual; (invited) 08.02.2021 - 10.02.2021; . BibTeX |
| 1990. | S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov: "Spin Drift-Diffusion Approach for the Computation of Torques in Multi-Layered Structures"; Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 51 - 52. BibTeX |
| 1989. | S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov: "Spin and Charge Drift-Diffusion Approach to Torque Computation in Magnetic Tunnel Junctions"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), 155 - 158 doi:10.1109/SISPAD54002.2021.9592559. BibTeX |
| 1988. | S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov: "Spin and Charge Drift-Diffusion Approach to Torque Computation in Spintronic Devices"; Talk: 2021 Workshop on Innovative Nanoscale Devices and Systems (WINDS2021), Kona; 28.11.2021 - 03.12.2021; in "WINDS Book of Abstracts", (2021), ISBN: 978-3-9504738-3-4, 12 - 13. BibTeX |
| 1987. | C. Wilhelmer, M. Jech, D. Waldhör, A.-M. El-Sayed, L. Cvitkovich, T. Grasser: "Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network"; Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 13.09.2021 - 22.09.2021; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), ISBN: 978-1-6654-3748-6, 243 - 246 doi:10.1109/ESSDERC53440.2021.9631833. BibTeX |
| 1986. | F. Rodrigues, L.F. Aguinsky, A. Toifl, A. Scharinger, A. Hössinger, J. Weinbub: "Surface Reaction and Topography Modeling of Fluorocarbon Plasma Etching"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), 229 - 232 doi:10.1109/SISPAD54002.2021.9592583. BibTeX |
| 1985. | T. Hadámek, M. Bendra, S. Fiorentini, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov: "Temperature Increase in MRAM at Writing: A Finite Element Approach"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 133 - 134. BibTeX |
| 1984. | S. Tyaginov, A. Grill, M. Vandemaele, T. Grasser, G. Hellings, A. Makarov, M. Jech, D. Linten, B. Kaczer: "A Compact Physics Analytical Model for Hot-Carrier Degradation"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020 in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3, 1 - 7 doi:10.1109/IRPS45951.2020.9128327. BibTeX |
| 1983. | C. Lenz, A. Scharinger, A. Hössinger, J. Weinbub: "A Novel Surface Mesh Coarsening Method for Flux-Dependent Topography Simulations of Semiconductor Fabrication Processes"; Talk: International Conferences on Scientific Computing in Electrical Engineering (SCEE), Eindhoven, The Netherlands; 16.02.2020 - 20.02.2020; in "Book of Abstracts of the International Conferences on Scientific Computing in Electrical Engineering (SCEE)", (2020), 99 - 100. BibTeX |
| 1982. | T. Knobloch, J. Michl, D. Waldhör, Yu. Illarionov, B. Stampfer, A. Grill, R. Zhou, P. Wu, M. Waltl, J. Appenzeller, T. Grasser: "Analysis of Single Electron Traps in Nano-scaled MoS2 FETs at Cryogenic Temperatures"; Talk: Device Research Conference (DRC), Columbus, OH, USA - virtual; 21.06.2020 - 24.06.2020; in "Proceedings of the Device Research Conference (DRC)", (2020), 52 - 53. BibTeX |
| 1981. | H. Kosina, H. Seiler, V. Sverdlov: "Analytical Formulae for the Surface Green´s Functions of Graphene and 1T´ MoS2 Nanoribbons"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 185 - 188 doi:10.23919/SISPAD49475.2020.9241650. BibTeX |
| 1980. | Yu. Illarionov, T. Knobloch, K. Smithe, M. Waltl, R. Grady, D. Waldhör, E. Pop, T. Grasser: "Anomalous Instabilities in CVD-MoS2 FETs Suppressed by High-Quality Al2O3 Encapsulation"; Poster: Device Research Conference (DRC), Columbus, OH, USA - virtual; 21.06.2020 - 24.06.2020; in "Proceedings of the Device Research Conference (DRC)", (2020), 150 - 151. BibTeX |
| 1979. | B. Ruch, M. Jech, G. Pobegen, T. Grasser: "Applicability of Shockley-Read-Hall Theory for Interface States"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA - virtual; 12.12.2020 - 18.12.2020; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2020), 449 - 452 doi:10.1109/IEDM13553.2020.9372032. BibTeX |
| 1978. | V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr: "Ballistic Conductance in a Topological 1T´-MoS2 Nanoribbon"; Poster: International Symposium on Nanostructures: Physics and Technology (NANO), Minsk, Belarus - virtual; 28.09.2020 - 02.10.2020; in "Proceedings of the International Symposium on Nanostructures: Physics and Technology (NANO)", (2020), ISBN: 978-5-93634-066-6, 200 - 201. BibTeX |
| 1977. | S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov: "Comprehensive Modeling of Coupled Spin and Charge Transport through Magnetic Tunnel Junctions"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 31.03.2020 - 02.04.2020; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), 112 - 113. BibTeX |
| 1976. | S. Fiorentini, J. Ender, M. Mohamedou, V. Sverdlov, W. Goes, R. Orio, S. Selberherr: "Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells"; Talk: SPIE Spintronics, San Diego, CA, USA - virtual; (invited) 24.08.2020 - 28.08.2020; in "Proceedings of SPIE Spintronics", (2020), 11470-44. BibTeX |
| 1975. | S. Fiorentini, J. Ender, M. Mohamedou, R. Orio, S. Selberherr, W. Goes, V. Sverdlov: "Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport Modeling"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 209 - 212 doi:10.23919/SISPAD49475.2020.9241657. BibTeX |
| 1974. | Yu. Illarionov, A. Banshchikov, T. Knobloch, D.K Polyushkin, S. Wachter, V. V. Fedorov, S. M. Suturin, M. Stöger-Pollach, M. I. Vexler, N. S. Sokolov, T. Grasser: "Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics"; Talk: Device Research Conference (DRC), Columbus, OH, USA - virtual; 21.06.2020 - 24.06.2020; in "Proceedings of the Device Research Conference (DRC)", (2020), 1 - 2 doi:10.1109/DRC50226.2020.9135160. BibTeX |
| 1973. | M. Waltl: "Defect Spectroscopy in SiC Devices"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; (invited) 28.04.2020 in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), 1 - 9 doi:10.1109/IRPS45951.2020.9129539. BibTeX |
| 1972. | K. Tselios, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, M. Waltl: "Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 04.10.2020 - 08.10.2020; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), 1 - 6 doi:10.1109/IIRW49815.2020.9312871. BibTeX |
| 1971. | J. Ender, M. Mohamedou, S. Fiorentini, R. Orio, S. Selberherr, W. Goes, V. Sverdlov: "Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 213 - 216 doi:10.23919/SISPAD49475.2020.9241662. BibTeX |
| 1970. | L. Filipovic: "Electromigration Model for Platinum Hotplates"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 315 - 318 doi:10.23919/SISPAD49475.2020.9241645. BibTeX |
| 1969. | V. Sverdlov, S. Fiorentini, J. Ender, W. Goes, R. Orio, S. Selberherr: "Emerging CMOS Compatible Magnetic Memories and Logic"; Talk: IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica; (invited) 25.02.2020 - 28.02.2020; in "Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC)", (2020), ISBN: 978-1-7281-1044-8, doi:10.1109/LAEDC49063.2020.9073332. BibTeX |
| 1968. | B. Ruch, G. Pobegen, C. Schleich, T. Grasser: "Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020 in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6, 1 - 6 doi:10.1109/IRPS45951.2020.9129513. BibTeX |
| 1967. | A. Scharinger, P. Manstetten, A. Hössinger, J. Weinbub: "Generative Model Based Adaptive Importance Sampling for Flux Calculations in Process TCAD"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 39 - 42 doi:10.23919/SISPAD49475.2020.9241615. BibTeX |
| 1966. | X. Klemenschits, S. Selberherr, L. Filipovic: "Geometric Advection Algorithm for Process Emulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 59 - 62 doi:10.23919/SISPAD49475.2020.9241678. BibTeX |
| 1965. | L. Filipovic, S. Selberherr: "Granularity Effects in Electromigration"; Talk: IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica; (invited) 25.02.2020 - 28.02.2020; in "Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC)", (2020), ISBN: 978-1-7281-1044-8, doi:10.1109/LAEDC49063.2020.9072963. BibTeX |
| 1964. | S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov: "Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM"; Talk: Meeting of the Electrochemical Society (ECS), Montreal, Canada - virtual; 10.05.2020 - 14.05.2020; in "Abstracts of the Meeting of the Electrochemical Society (ECS)", (2020), MA2020-01/1389, doi:10.1149/MA2020-01241389mtgabs. BibTeX |
| 1963. | L. Filipovic, S. Selberherr: "Integration of Gas Sensors with CMOS Technology"; Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia - virtual; (invited) 16.03.2020 - 18.03.2020; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2020), ISBN: 978-1-7281-2539-8, 294 - 297 doi:10.1109/EDTM47692.2020.9117828. BibTeX |
| 1962. | Yu. Illarionov, T. Knobloch, M. Waltl, S. Majumdar, M. Soikkeli, W. Kim, S. Wachter, D.K Polyushkin, S. Arpiainen, M. Prunnila, A. Mueller, T. Grasser: "Low Variability and 1010 On/Off Current Ratio in Flexible MoS2 FETs with Al2O3 Encapsulation Improved by Parylene N"; Talk: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 24.06.2020 - 26.06.2020; in "Proceedings of the Electronic Materials Conference (EMC)", (2020), 25. BibTeX |
| 1961. | D. Milardovich, M. Jech, D. Waldhör, M. Waltl, T. Grasser: "Machine Learning Prediction of Formation Energies in a-SiO2"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 339 - 342 doi:10.23919/SISPAD49475.2020.9241609. BibTeX |
| 1960. | V. Sverdlov: "Modeling Spin Transfer Torque Magnetoresistive Memory"; Talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual; (invited) 20.10.2020 in "Proceedings of the Silvaco Users Global Event (SURGE)", (2020), 1. BibTeX |
| 1959. | A. Vasilev, M. Jech, A. Grill, G. Rzepa, C. Schleich, A. Makarov, G. Pobegen, T. Grasser, M. Waltl, S. E. Tyaginov: "Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 04.10.2020 - 08.10.2020; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), 1 - 4 doi:10.1109/IIRW49815.2020.9312864. BibTeX |
| 1958. | R. Kosik, J. Cervenka, H. Kosina: "Numerical Solution of the Constrained Wigner Equation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 189 - 191 doi:10.23919/SISPAD49475.2020.9241624. BibTeX |
| 1957. | A. Kruv, B. Kaczer, A. Grill, M. Gonzalez, J. Franco, D. Linten, W. Goes, T. Grasser, I. De Wolf: "On the Impact of Mechanical Stress on Gate Oxide Trapping"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020 - 30.04.2020; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), 1 - 5 doi:10.1109/IRPS45951.2020.9129541. BibTeX |
| 1956. | S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov: "Perpendicular STT-MRAM Switching at Fixed Voltage and at Fixed Current"; Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia - virtual; 16.03.2020 - 18.03.2020; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2020), ISBN: 978-1-7281-2539-8, 341 - 344 doi:10.1109/EDTM47692.2020.9117985. BibTeX |
| 1955. | A. Toifl: "Physical Process TCAD: Victory Process´ Crystal Anisotropy Engine"; Talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual; (invited) 20.10.2020 in "Proceedings of the Silvaco Users Global Event (SURGE)", (2020), 1. BibTeX |
| 1954. | J. Michl, A. Grill, D. Claes, G. Rzepa, B. Kaczer, D. Linten, I. Radu, T. Grasser, M. Waltl: "Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020 - 30.05.2020; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3, 1 - 6 doi:10.1109/IRPS45951.2020.9128349. BibTeX |
| 1953. | R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov: "Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 01.09.2020 in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), 123 - 124. BibTeX |
| 1952. | A. Grill, E. Bury, J. Michl, S. Tyaginov, D. Linten, T. Grasser, B. Parvais, B. Kaczer, M. Waltl, I. Radu: "Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020 - 30.04.2020; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3, 1 - 6 doi:10.1109/IRPS45951.2020.9128316. BibTeX |
| 1951. | M. Quell, G. Diamantopoulos, A. Hössinger, J. Weinbub: "Shared-Memory Block-Based Fast Marching Method for Hierarchical Meshes"; Talk: European Seminar on Computing (ESCO), Pilsen, Czech Republic - virtual; 08.06.2020 - 11.06.2020; in "Proceedings of the European Seminar on Computing (ESCO)", (2020), 1 page(s) . BibTeX |
| 1950. | J. Berens, M. Weger, G. Pobegen, T. Aichinger, G. Rescher, C. Schleich, T. Grasser: "Similarities and Differences of BTI in SiC and Si Power MOSFETs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 29.03.2020 - 02.04.2020; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6, 1 - 6 doi:10.1109/IRPS45951.2020.9129259. BibTeX |
| 1949. | M. Ballicchia, M. Nedjalkov, J. Weinbub: "Single Electron Control by a Uniform Magnetic Field in a Focusing Double-Well Potential Structure"; Talk: IEEE International Conference on Nanotechnology (NANO), Montreal, Canada - virtual; 29.07.2020 - 31.07.2020; in "Proceedings of the IEEE International Conference on Nanotechnology (NANO)", (2020), ISBN: 978-1-7281-8264-3, 73 - 76 doi:10.1109/NANO47656.2020.9183565. BibTeX |
| 1948. | M. Waltl: "Spectroscopy of Single Defects in Semiconductor Transistors"; Talk: International Conference on Materials Science and Engineering (MatScience), San Francisco, CA, USA - virtual; (invited) 05.11.2020 - 06.11.2020; in "Book of Abstracts of the International Conference on Materials Science and Engineering (MatScience)", (2020), . BibTeX |
| 1947. | V. Sverdlov, A.-M. El-Sayed, S. Selberherr: "Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T´ Phase: A k∙p Study"; Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lodz, Poland - virtual; 25.06.2020 - 27.06.2020; in "Book of Abstracts of the International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES)", (2020), 58. BibTeX |
| 1946. | R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, S. Selberherr, V. Sverdlov: "Switching of a Perpendicularly Magnetized Free-Layer by Spin-Orbit-Torques with Reduced Currents"; Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, FL, USA - virtual; 13.09.2020 - 16.09.2020; in "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2020), ISBN: 978-1-950492-37-4, 58 - 61. BibTeX |
| 1945. | T. Knobloch, Yu. Illarionov, B. Uzlu, M. Waltl, D. Neumaier, M. Lemme, T. Grasser: "The Impact of the Graphene Work Function on the Stability of Flexible GFETs"; Talk: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 24.06.2020 - 26.06.2020; in "Proceedings of the Electronic Materials Conference (EMC)", (2020), . BibTeX |
| 1944. | T. Grasser, B. Kaczer, B. O´Sullivan, G. Rzepa, B. Stampfer, M. Waltl: "The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020 - 30.04.2020; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6, 1 - 6 doi:10.1109/IRPS45951.2020.9129198. BibTeX |
| 1943. | V. Sverdlov, H. Kosina: "Topologically Protected and Conventional Subbands in a 1T´-MoS2 Nanoribbon Channel"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 01.09.2020 in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), 68 - 69. BibTeX |
| 1942. | K. Rupp: "Vendor-Optimized vs. Portable Performance: Approaches to Get Both"; Talk: SIAM Conference on Parallel Processing for Scientific Computing (PP), Seattle, WA, USA; 12.02.2020 - 15.02.2020; . BibTeX |
| 1941. | Yu. Illarionov, T. Knobloch, T. Grasser: "Where Are the Best Insulators for 2D Field-Effect Transistors?"; Talk: Meeting of the Electrochemical Society (ECS), Montreal, Canada - virtual; (invited) 10.05.2020 - 14.05.2020; in "Abstracts of the Meeting of the Electrochemical Society (ECS)", (2020), MA2020-01/844, doi:10.1149/MA2020-0110844mtgabs. BibTeX |
| 1940. | R. Orio, A. Makarov, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov: "A Dynamical Approach to Fast and Reliable External Field Free Perpendicular Magnetization Reversal by Spin-Orbit Torques"; Poster: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 07.12.2019 - 11.12.2019; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM", (2019), 1 page(s) . BibTeX |
| 1939. | L. Gnam, P. Manstetten, M. Quell, K. Rupp, S. Selberherr, J. Weinbub: "A Flexible Shared-Memory Parallel Mesh Adaptation Framework"; Talk: International Conference on Computational Science and Its Applications (ICCSA), Saint Petersburg , Russia; 01.07.2019 - 04.07.2019; in "Proceedings of the International Conference on Computational Science and Its Applications (ICCSA)", (2019), ISBN: 978-1-7281-2847-4, 158 - 165 doi:10.1109/ICCSA.2019.00016. BibTeX |
| 1938. | M. Nedjalkov, J. Weinbub, M. Ballicchia, S. Selberherr, I. Dimov, D.K. Ferry, K. Rupp: "A Gauge-Invariant Wigner Equation for General Electromagnetic Fields"; Talk: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3, 67 - 68. BibTeX |
| 1937. | L.F. Aguinsky, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub: "A Mathematical Extension to Knudsen Diffusion Including Direct Flux and Accurate Geometric Description"; Poster: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3, 109 - 110. BibTeX |
| 1936. | V. Sverdlov, S. Selberherr: "A Monte Carlo Evaluation of Current and Low Frequency Current Noise at Spin-Dependent Hopping in Magnetic Tunnel Junctions"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 10.06.2019 - 14.06.2019; in "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2019), 96. BibTeX |
| 1935. | R. Kosik, H. Kosina: "A Revised Wigner Function Approach for Stationary Quantum Transport"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 10.06.2019 - 14.06.2019; in "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2019), 70 - 71. BibTeX |
| 1934. | H. Kosina, G. Indalecio: "A Two-Particle Monte Carlo Method for Carrier Transport in the Presence of Electron-Electron Scattering"; Talk: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3, 93 - 94. BibTeX |
| 1933. | Z. Wu, J. Franco, D. Claes, G. Rzepa, P. Roussel, N. Collaert, G Groeseneken, D. Linten, T. Grasser, B. Kaczer: "Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 31.03.2019 - 04.04.2019; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3, 1 - 7 doi:10.1109/IRPS.2019.8720541. BibTeX |
| 1932. | H. Ceric, H. Zahedmanesh: "Advanced Modeling and Simulation of Cu Nano-Interconnects Reliability"; Poster: IEEE International Interconnect Technology Conference (IITC), Brussels, Belgium; 03.06.2019 - 06.06.2019; in "Proceedings of the International Interconnect Technology Conference (IITC)", (2019), . BibTeX |
| 1931. | L.F. Aguinsky, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub: "An Extended Knudsen Diffusion Model for Aspect Ratio Dependent Atomic Layer Etching"; Talk: International Workshop on Atomic Layer Etching (ALE), Bellevue, WA, USA; 21.07.2019 - 24.07.2019; in "Abstracts of the International Conference on Atomic Layer Deposition (ALD) Featuring the International Workshop on Atomic Layer Etching (ALE)", (2019), 109. BibTeX |
| 1930. | H. Ceric, H. Zahedmanesh, K. Croes: "Analysis of Electromigration Failure of Nano-Interconnects through a Combination of Modeling and Experimental Methods"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 23.09.2019 - 26.09.2019; . BibTeX |
| 1929. | H. Ceric, S. Selberherr, H. Zahedmanesh, R. Orio, K. Croes: "Assessment of Electromigration in Nano‐Interconnects"; Talk: International Conference on Reliability and Stress-Related Phenomena in Nanoelectronics (IRSP), San Jose, USA; (invited) 04.11.2019 - 06.11.2019; in "Abstracts of the International Conference on Reliability and Stress-Related Phenomena in Nanoelectronics (IRSP)", (2019), 7. BibTeX |
| 1928. | S. Selberherr, L. Filipovic: "CMOS Compatible Gas Sensors"; Talk: International Conference on Materials Science and Engineering, San Francisco, CA, USA; (invited) 18.02.2019 - 20.02.2019; in "Book of Abstracts of the International Conference on Materials Science and Engineering", (2019), 1 page(s) . BibTeX |
| 1927. | V. Sverdlov, S. Selberherr: "CMOS Technology Compatible Magnetic Memories"; Talk: International Symposium on Next-Generation Electronics (ISNE), Zhengzhou, China; (invited) 09.10.2019 - 10.10.2019; in "Proceedings of the International Symposium on Next Generation Electronics (ISNE)", (2019), ISBN: 978-1-7281-2062-1, doi:10.1109/ISNE.2019.8896421. BibTeX |
| 1926. | L. Filipovic, S. Selberherr: "CMOS-Compatible Gas Sensors"; Talk: International Conference on Microelectronics (MIEL), Nis, Serbia; (invited) 16.09.2019 - 18.09.2019; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2019), 9 - 16 doi:10.1109/MIEL.2019.8889585. BibTeX |
| 1925. | Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, M. Vexler, N. S. Sokolov, T. Müller, T. Grasser: "CaF2 Insulators for Ultrascaled 2D Field Effect Transistors"; Talk: Graphene Week, Helsinki, Finland; (invited) 23.09.2019 - 27.09.2019; . BibTeX |
| 1924. | T. Grasser: "CaF2 Insulators for Ultrascaled 2D Field Effect Transistors"; Talk: IEEE EDS Distinguished Lecture at RWTH Aachen, Aachen, Germany; (invited) 26.11.2019. BibTeX |
| 1923. | T. Grasser: "CaF2 Insulators for Ultrascaled 2D Field Effect Transistors"; Talk: Workshop "Wafer-scale Integration of 2D materials", Aachen, Germany; (invited) 13.11.2019. BibTeX |
| 1922. | M. Waltl: "Characterization and Modeling of Single Charge Trapping in MOS Transistors"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; (invited) 13.10.2019 - 17.10.2019; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), 1 - 9 doi:10.1109/IIRW47491.2019.8989880. BibTeX |
| 1921. | V. Sverdlov, S. Selberherr: "Combining Perpendicular and Shape Anisotropy for Optimal Switching of Advanced Spin-Orbit Torque Memory Cells"; Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Singapore; 13.03.2019 - 15.03.2019; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2019), ISBN: 978-1-5386-6508-4, 151 - 153 doi:10.1109/EDTM.2019.8731330. BibTeX |
| 1920. | S. Fiorentini, R. Orio, W. Goes, J. Ender, V. Sverdlov: "Comprehensive Comparison of Switching Models for Perpendicular Spin Transfer Torque MRAM Cells"; Poster: European Materials Research Society (EMRS), Warsaw, Poland; 16.09.2019 - 19.09.2019; . BibTeX |
| 1919. | S. Fiorentini, R. Orio, W. Goes, J. Ender, V. Sverdlov: "Comprehensive Comparison of Switching Models for Perpendicular Spin-Transfer Torque MRAM Cells"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1, 57 - 60 doi:10.1109/SISPAD.2019.8870359. BibTeX |
| 1918. | S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov: "Comprehensive Modeling of Switching in Perpendicular STT-MRAM"; Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 01.12.2019 - 06.12.2019; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0, 107 - 108. BibTeX |
| 1917. | J. Weinbub, M. Nedjalkov: "Computational Strategies for Two-Dimensional Wigner Monte Carlo"; High Performance Computing Conference (HPC), Borovets, Bulgaria; (invited) 02.09.2019 - 06.09.2019; in "Procedings of the High Performance Computing Conference (HPC)", (2019), 55 - 56. BibTeX |
| 1916. | H. Kosina, M. Kampl: "Current Estimation in Backward Monte Carlo Simulations"; Poster: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3, 129 - 130. BibTeX |
| 1915. | M. Ballicchia, M. Nedjalkov, J. Weinbub: "Effects of Repulsive Dopants on Quantum Transport in a Nanowire"; Poster: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3, 115 - 116. BibTeX |
| 1914. | R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov: "Efficient Magnetic Field Free Switching of Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, France; 01.04.2019 - 03.04.2019; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2019), 152 - 153. BibTeX |
| 1913. | L. Filipovic, R. Orio: "Electromigration in Nano-Interconnects"; Talk: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; (invited) 24.05.2019 - 25.05.2019; in "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), 2. BibTeX |
| 1912. | M. Ballicchia, M. Nedjalkov, J. Weinbub: "Electron Evolution and Boundary Conditions in the Wigner Signed-Particle Approach"; Talk: International Wigner Workshop (IW2), Chicago, IL, USA; 19.05.2019 - 20.05.2019; in "Book of Abstracts of the International Wigner Workshop (IW2)", (2019), ISBN: 978-3-9504738-1-0, 24 - 25. BibTeX |
| 1911. | J. Weinbub, M. Ballicchia, D.K. Ferry, M. Nedjalkov: "Electron Interference and Wigner Function Negativity in Dopant Potential Structures"; Talk: International Wigner Workshop (IW2), Chicago, IL, USA; 19.05.2019 - 20.05.2019; in "Book of Abstracts of the International Wigner Workshop (IW2)", (2019), ISBN: 978-3-9504738-1-0, 14 - 15. BibTeX |
| 1910. | J. Weinbub, M. Ballicchia, M. Nedjalkov: "Electron Interference in Single- and Double-Dopant Potential Structures"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 10.06.2019 - 14.06.2019; in "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2019), 103 - 104. BibTeX |
| 1909. | Yu. Illarionov, A. Banshchikov, M. Vexler, D.K Polyushkin, S. Wachter, M. Thesberg, N. S. Sokolov, T. Mueller, T. Grasser: "Epitaxial CaF2: a Route towards Scalable 2D Electronics"; Poster: International Conference on Physics of 2D Crystals (ICP2DC4), Hangzhou, China; 10.06.2019 - 15.06.2019; in "Proceedings of the International Conference on Physics of 2D Crystals (ICP2DC4)", (2019), 69. BibTeX |
| 1908. | X. Klemenschits, S. Selberherr, L. Filipovic: "Fast Volume Evaluation on Sparse Level Sets"; Poster: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3, 113 - 114. BibTeX |
| 1907. | M. Jech, S. Tyaginov, B. Kaczer, J. Franco, D. Jabs, C. Jungemann, M. Waltl, T. Grasser: "First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco , USA; 07.12.2019 - 11.12.2019; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), doi:10.1109/IEDM19573.2019.8993630. BibTeX |
| 1906. | M. Vandemaele, B. Kaczer, S. E. Tyaginov, Z. Stanojevic, A. Makarov, A. Chasin, E. Bury, H. Mertens, D. Linten, G Groeseneken: "Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 31.03.2019 - 04.04.2019; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3, 1 - 7 doi:10.1109/IRPS.2019.8720406. BibTeX |
| 1905. | B. O´Sullivan, R. Ritzenthaler, G. Rzepa, Z. Wu, E. D. Litta, O. Richard, T. Conard, V. Machkaoutsan, P. Fazan, C. Kim, J. Franco, B. Kaczer, T. Grasser, A. Spessot, D. Linten, N. Horiguchi: "Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-κ/Metal Gate Devices"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 31.03.2019 - 04.04.2019; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3, 1 - 8 doi:10.1109/IRPS.2019.8720598. BibTeX |
| 1904. | A. Hössinger, P. Manstetten, G. Diamantopoulos, M. Quell, J. Weinbub: "High Performance Computing Aspects in Semiconductor Process Simulation"; Talk: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; (invited) 24.05.2019 - 25.05.2019; in "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), 3 - 4. BibTeX |
| 1903. | P. Manstetten, G. Diamantopoulos, L. Gnam, L.F. Aguinsky, M. Quell, A. Toifl, A. Scharinger, A. Hössinger, M. Ballicchia, M. Nedjalkov, J. Weinbub: "High Performance TCAD: From Simulating Fabrication Processes to Wigner Quantum Transport"; Talk: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 24.05.2019 - 25.05.2019; in "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), 13. BibTeX |
| 1902. | P. Manstetten, L.F. Aguinsky, S. Selberherr, J. Weinbub: "High-Performance Ray Tracing for Nonimaging Applications"; Talk: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 24.05.2019 - 25.05.2019; in "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), 20. BibTeX |
| 1901. | V. Sverdlov, S. Selberherr: "Hopping in a Multiple Ferromagnetic Terminal Configuration"; Talk: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3, 75 - 77. BibTeX |
| 1900. | J. Scharlotta, G. Bersuker, S. E. Tyaginov, C. Young, G. Haase, G. Rzepa, M. Waltl, T. Chohan, S. Iyer, A. Kotov, C. Zambelli, F. Guarin, F. M. Puglisi, C. Ostermaier: "IIRW 2019 Discussion Group II: Reliability for Aerospace Applications"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 13.10.2019 - 17.10.2019; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2019), 1 - 4 doi:10.1109/IIRW47491.2019.8989910. BibTeX |
| 1899. | J. Ender, R. Orio, S. Fiorentini, W. Goes, V. Sverdlov: "Large-Scale Finite Element Micromagnetics Simulations using Open Source Software"; Poster: European Materials Research Society (EMRS), Warsaw, Poland; 16.09.2019 - 19.09.2019; . BibTeX |
| 1898. | M. Ballicchia, D.K. Ferry, M. Nedjalkov, J. Weinbub: "Linking Wigner Function Negativity to Quantum Coherence in a Nanowire"; Talk: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3, 59 - 60. BibTeX |
| 1897. | A. Shah, M. Waltl: "Low Cost and High Performance Radiation Hardened Latch Design for Reliable Circuits"; Talk: IEEE International Conference on Electronics Circuits and Systems (ICECS), Genova, Italy; 27.11.2019 - 29.11.2019; in "Proceedings of the IEEE International Conference on Electronics Circuits and Systems (ICECS)", (2019), 197 - 200 doi:10.1109/ICECS46596.2019.8964962. BibTeX |
| 1896. | J. Franco, Z. Wu, G. Rzepa, A. Vandooren, H. Arimura, D. Claes, N. Horiguchi, N. Collaert, D. Linten, T. Grasser, B. Kaczer: "Low Thermal Budget Dual-Dipole Gate Stacks Engineered for Sufficient BTI Reliability in Novel Integration Schemes"; Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Singapore; (invited) 12.03.2019 - 15.03.2019; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2019), ISBN: 978-1-5386-6508-4, 215 - 217 doi:10.1109/EDTM.2019.8731237. BibTeX |
| 1895. | V. Sverdlov: "Magnetic Field Free Switching of a Perpendicular SOT MRAM Cell"; Talk: LETI Innovation days: Advanced Simulation for Non-Volatile Memory Workshop, Grenoble, France; (invited) 28.06.2019. BibTeX |
| 1894. | R. Orio, S. Selberherr, V. Sverdlov: "Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques"; Talk: SPIE Spintronics, San Diego, CA, USA; (invited) 11.08.2019 - 15.08.2019; in "Proceedings of SPIE Spintronics", (2019), 11090-123. BibTeX |
| 1893. | D. Waldhör, Y. Wimmer, A.-M. El-Sayed, W. Goes, M. Waltl, T. Grasser: "Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 13.10.2019 - 17.10.2019; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), 1 - 5 doi:10.1109/IIRW47491.2019.8989889. BibTeX |
| 1892. | L. Filipovic: "Modeling and Simulation of Atomic Layer Deposition"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1, 323 - 326 doi:10.1109/SISPAD.2019.8870462. BibTeX |
| 1891. | A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov: "Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 31.03.2019 - 04.04.2019; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3, doi:10.1109/IRPS.2019.8720584. BibTeX |
| 1890. | A. Toifl, M. Quell, A. Hössinger, A. Babayan, S. Selberherr, J. Weinbub: "Novel Numerical Dissipation Scheme for Level-Set Based Anisotropic Etching Simulations"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1, 327 - 330 doi:10.1109/SISPAD.2019.8870443. BibTeX |
| 1889. | A. Makarov, Ph. Roussel, E. Bury, M. Vandemaele, A. Spessot, D. Linten, B. Kaczer, S. E. Tyaginov: "On Correlation Between Hot-Carrier Stress Induced Device Parameter Degradation and Time-Zero Variability"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2019 - 17.10.2019; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), ISBN: 978-1-7281-2203-8, doi:10.1109/IIRW47491.2019.8989882. BibTeX |
| 1888. | R. Kosik, M. Thesberg, J. Weinbub, H. Kosina: "On the Consistency of the Stationary Wigner Equation"; Talk: International Wigner Workshop (IW2), Chicago, IL, USA; 19.05.2019 - 20.05.2019; in "Book of Abstracts of the International Wigner Workshop (IW2)", (2019), ISBN: 978-3-9504738-1-0, 30 - 31. BibTeX |
| 1887. | M. Quell, G. Diamantopoulos, A. Hössinger, S. Selberherr, J. Weinbub: "Parallelized Bottom-Up Correction in Hierarchical Re-Distancing for Topography Simulation"; Talk: High Performance Computing Conference (HPC), Borovets, Bulgaria; 02.09.2019 - 06.09.2019; in "Procedings of the High Performance Computing Conference (HPC)", (2019), 45. BibTeX |
| 1886. | M. Quell, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub: "Parallelized Construction of Extension Velocities for the Level-Set Method"; Talk: International Conference on Parallel Processing and Applied Mathematics (PPAM), Bialystok, Poland; 08.09.2019 - 11.09.2019; in "Proceedings of the International Conference on Parallel Processing and Applied Mathematics (PPAM)", (2019), 42. BibTeX |
| 1885. | M. Quell, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub: "Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1, 335 - 338 doi:10.1109/SISPAD.2019.8870482. BibTeX |
| 1884. | S. Majumdar, M. Soikkeli, W. Kim, Yu. Illarionov, S. Wachter, D.K Polyushkin, S. Arpiainen, M. Prunnila: "Passivation controlled field effect mobility in 2D semiconductor based FET devices for high performance logic circuit development on flexible platform"; Poster: Graphene Week, Helsinki, Finland; 23.09.2019 - 27.09.2019; . BibTeX |
| 1883. | C. Schleich, J. Berens, G. Rzepa, G. Pobegen, G. Rescher, S. E. Tyaginov, T. Grasser, M. Waltl: "Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 07.12.2019 - 11.12.2019; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), doi:10.1109/IEDM19573.2019.8993446. BibTeX |
| 1882. | S. E. Tyaginov, A. Chasin, A. Makarov, A.-M. El-Sayed, M. Jech, A. De Keersgieter, G. Eneman, M. Vandemaele, J. Franco, D. Linten, B. Kaczer: "Physics-based Modeling of Hot-Carrier Degradation in Ge NWFETs"; Talk: International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan; 02.09.2019 - 05.09.2019; in "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2019), 565 - 566. BibTeX |
| 1881. | M. Nedjalkov, J. Weinbub, M. Ballicchia, S. Selberherr, I. Dimov, D.K. Ferry, K. Rupp: "Posedness of Stationary Wigner Equation"; Talk: International Wigner Workshop (IW2), Chicago, IL, USA; 19.05.2019 - 20.05.2019; in "Book of Abstracts of the International Wigner Workshop (IW2)", (2019), ISBN: 978-3-9504738-1-0, 32 - 33. BibTeX |
| 1880. | M. Ballicchia, M. Nedjalkov, S. Selberherr, J. Weinbub: "Potentials for Single Electron State Processing"; Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 01.12.2019 - 06.12.2019; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0, 111 - 112. BibTeX |
| 1879. | X. Klemenschits, P. Manstetten, L. Filipovic, S. Selberherr: "Process Simulation in the Browser: Porting ViennaTS using WebAssembly"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1, 339 - 342 doi:10.1109/SISPAD.2019.8870374. BibTeX |
| 1878. | G. Diamantopoulos, P. Manstetten, L. Gnam, V. Simonka, L.F. Aguinsky, M. Quell, A. Toifl, A. Hössinger, J. Weinbub: "Recent Advances in High Performance Process TCAD"; Talk: SIAM Conference on Computational Science and Engineering, Spokane, WA, USA; 25.02.2019 - 01.03.2019; in "CSE19 Abstracts", (2019), 335. BibTeX |
| 1877. | Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, M. I. Vexler, N. S. Sokolov, T. Müller, T. Grasser: "Reliability and Thermal Stability of MoS2 FETs with Ultrathin CaF2 Insulator"; Talk: IEEE Nanotechnology Materials and Devices Conference (NMDC), Stockholm, Sweden; (invited) 27.10.2019 - 30.10.2019; . BibTeX |
| 1876. | Yu. Illarionov, T. Grasser: "Reliability of 2D Field-Effect Transistors: from First Prototypes to Scalable Devices"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hangzhou, China; (invited) 02.07.2019 - 05.07.2019; in "Proceedings of the International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)", (2019), 1 - 6 doi:10.1109/IPFA47161.2019.8984799. BibTeX |
| 1875. | R. Orio, A. Makarov, S. Selberherr, W. Gös, J. Ender, S. Fiorentini, V. Sverdlov: "Robust Magnetic Field Free Switching Scheme for Perpendicular Free Layer in Advanced Spin Orbit Torque Magnetoresistive Random Access Memory"; Talk: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3, 69 - 71. BibTeX |
| 1874. | R. Orio, S. Selberherr, J. Ender, S. Fiorentini, W. Goes, V. Sverdlov: "Robustness of the Two-Pulse Switching Scheme for SOT-MRAM"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 01.12.2019 - 06.12.2019; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0, 54 - 55. BibTeX |
| 1873. | V. Sverdlov, S. Selberherr: "Shot Noise in Magnetic Tunnel Junctions"; Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, FL, USA; 06.07.2019 - 09.07.2019; in "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) Volume II", (2019), ISBN: 978-1-950492-09-1, 19 - 22. BibTeX |
| 1872. | A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, S. E. Tyaginov: "Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs"; Talk: International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan; 02.09.2019 - 05.09.2019; in "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2019), 609 - 610. BibTeX |
| 1871. | V. Sverdlov, S. Selberherr: "Spin-Based CMOS-Compatible Memories"; International Nanoelectronics Conference (INEC), Kuching, Malaysia; (invited) 03.07.2019 - 05.07.2019; in "Proceedings of the International Nanoelectronics Conferences (INEC)", (2019), ISSN: 2159-3531, doi:10.1109/INEC.2019.8853848. BibTeX |
| 1870. | V. Sverdlov: "Spin-based Electronics: Recent Developments and Trends"; Talk: International Conference on Modern Problems in the Physics of Surfaces and Nanostructures (ICMPSN), Yaroslavl, Russia; (invited) 26.08.2019 - 29.08.2019; in "Proceedings of the International Conference on Modern Problems in the Physics of Surfaces and Nanostructures (ICMPSN)", (2019), 7. BibTeX |
| 1869. | V. Sverdlov, S. Selberherr: "Spintronic Memories"; Talk: Energy-Materials-Nanotechnology Fall Meeting (EMN), Chengdu, China; (invited) 16.12.2019 - 19.12.2019; in "Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN)", (2019), 19 - 21. BibTeX |
| 1868. | B. Stampfer, M. Simicic, P. Weckx, A. Abbasi, B. Kaczer, T. Grasser, M. Waltl: "Statistical Characterization of BTI and RTN using Integrated pMOS Arrays"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 13.10.2019 - 17.10.2019; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), 1 - 5 doi:10.1109/IIRW47491.2019.8989904. BibTeX |
| 1867. | S. Selberherr: "Status and Future of Solid-State Non-Volatile Memory"; Talk: International Conference on Frontier Sciences, Beijing, China; (invited) 06.11.2019 - 07.11.2019; in "Book of Abstracts of the International Conference on Frontier Sciences", (2019), 97. BibTeX |
| 1866. | A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, S. E. Tyaginov: "Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants"; Talk: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 23.09.2019 - 26.09.2019; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2019), ISBN: 978-1-7281-1539-9, 262 - 265 doi:10.1109/ESSDERC.2019.8901721. BibTeX |
| 1865. | J. Cervenka, J. Weinbub: "Superposed States and the Wigner Approach"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 10.06.2019 - 14.06.2019; in "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2019), 50. BibTeX |
| 1864. | R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov: "Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM"; Talk: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 23.09.2019 - 26.09.2019; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2019), ISSN: 2378-6558, 146 - 149 doi:10.1109/ESSDERC.2019.8901780. BibTeX |
| 1863. | L.F. Aguinsky, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub: "Three-Dimensional TCAD for Atomic Layer Processing"; Talk: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 24.05.2019 - 25.05.2019; in "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), 5. BibTeX |
| 1862. | R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov: "Two-Pulse Magnetic Field Free Switching Scheme for Advanced Perpendicular SOT-MRAM"; Talk: International Symposium on Hysteresis Modeling and Micromagnetics (HMM), Heraklion, Greece; 19.05.2019 - 22.05.2019; in "Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM)", (2019), 34. BibTeX |
| 1861. | S. Tyaginov, A. El-Sayed, A. Makarov, A. Chasin, H. Arimura, M. Vandemaele, M. Jech, E. Capogreco, L. Witters, A. Grill, A. De Keersgieter, G. Eneman, D. Linten, B. Kaczer: "Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 07.12.2019 - 11.12.2019; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), ISBN: 978-1-7281-4032-2, 498 - 501 doi:10.1109/IEDM19573.2019.8993644. BibTeX |
| 1860. | G. Diamantopoulos, A. Hössinger, S. Selberherr, J. Weinbub: "A Shared-Memory Parallel Multi-Mesh Fast Marching Method for Full and Narrow Band Re-Distancing"; Talk: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 03.06.2018 - 08.06.2018; in "Proc. 6th European Seminar on Computing", (2018), 1 page(s) . BibTeX |
| 1859. | V. Sverdlov, S. Selberherr: "A Single-Spin Switch"; Talk: International Electron Devices & Materials Symposium (IEDMS), Keelung, Taiwan; (invited) 13.11.2018 - 15.11.2018; in "Conference Abstract Book", (2018), . BibTeX |
| 1858. | M. Benam, M. Nedjalkov, S. Selberherr: "A Wigner Potential Decomposition in the Signed-Particle Monte Carlo Approach"; Talk: Ninth International Conference on Numerical Methods and Applications (NM&A'18), Borovets, Bulgaria; 20.08.2018 - 24.08.2018; in "Book of Abstracts of the Ninth International Conference on Numerical Methods and Applications (NM&A'18)", (2018), 34 - 35. BibTeX |
| 1857. | V. Sverdlov, S. Selberherr: "Actual Problems in the Field of Spintronics"; Talk: Workshop on Applied Mathematics and Simulation for Semiconductors (AMaSIS), Berlin, Germany; (invited) 08.10.2018 - 10.10.2018; in "Proceedings of the Workshop on Applied Mathematics and Simulation for Semiconductors (AMasIS) 2018", (2018), 40. BibTeX |
| 1856. | V. Simonka: "Advancements In Annealing And Oxidation Steps For Compound Semiconductor Power Devices"; Talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA; (invited) 09.10.2018. BibTeX |
| 1855. | Yu. Illarionov, K. Smithe, M. Waltl, R. Grady, R.G. Deshmukh, E. Pop, T. Grasser: "Annealing and Encapsulation of CVD-MoS2 FETs with 1010 On/Off Current Ratio"; Poster: Device Research Conference (DRC), Santa-Barbara, CA, USA; 24.06.2018 - 27.06.2018; in "Proceedings of the Device Research Conference (DRC)", (2018), ISBN: 978-1-5386-3028-0, doi:10.1109/DRC.2018.8442242. BibTeX |
| 1854. | J. Franco, Z. Wu, G. Rzepa, A. Vandooren, H. Arimura, L. Ragnarsson, G. Hellings, S. Brus, D. Cott, V. De Heyn, G. Groeseneken, N. Horiguchi, J. Ryckaert, N. Collaert, D. Linten, T. Grasser, B. Kaczer: "BTI Reliability Improvement Strategies in Low Thermal Budget Gate Stacks for 3D Sequential Integration"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 01.12.2018 - 05.12.2018; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2018), ISBN: 978-1-7281-1987-8, 34.2.1 - 34.2.4 doi:10.1109/IEDM.2018.8614559. BibTeX |
| 1853. | S. E. Tyaginov, M. Jech, G. Rzepa, A. Grill, A.-M. El-Sayed, G. Pobegen, A. Makarov, T. Grasser: "Border Trap Based Modeling of SiC Transistor Transfer Characteristics"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 07.10.2018 - 11.10.2018; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3, doi:10.1109/IIRW.2018.8727083. BibTeX |
| 1852. | L. Filipovic: "CMOS-Compatible Semiconductor-Based Gas Sensors"; Talk: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Whistler, British Columbia, Canada; (invited) 09.05.2018 - 11.05.2018; in "Book of Abstracts of Emerging Technologies Communication Microsystems Optoelectronics Sensors", (2018), . BibTeX |
| 1851. | T. Grasser, B. Stampfer, M. Waltl, G. Rzepa, K. Rupp, F. Schanovsky, G. Pobegen, K. Puschkarsky, H. Reisinger, B. O´Sullivan, B. Kaczer: "Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting from NBTI/PBTI Stress in nMOS/pMOS Transistors"; Talk: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 11.03.2018 - 15.03.2018; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), 2A.2-1 - 2A.2-10. BibTeX |
| 1850. | Yu. Illarionov, B. Stampfer, F. Zhang, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser: "Characterization of Single Defects: from Si to MoS2 FETs"; Poster: International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta; 29.05.2018 - 02.06.2018; . BibTeX |
| 1849. | L. Gnam, P. Manstetten, S. Selberherr, J. Weinbub: "Comparison of High-Performance Graph Coloring Algorithms"; Talk: Vienna Young Scientists Symposium (VSS), Vienna, Austria; 07.06.2018 - 08.06.2018; in "Proceedings of the Vienna Young Scientists Symposium", (2018), ISBN: 978-3-9504017-8-3, 30 - 31. BibTeX |
| 1848. | V. Sverdlov, S. Selberherr: "Current and Shot Noise at Spin-dependent Hopping in Magnetic Tunnel Junctions"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0, 107 - 108. BibTeX |
| 1847. | M. Vandemaele, B. Kaczer, Z. Stanojevic, S. E. Tyaginov, A. Makarov, A. Chasin, H. Mertens, D. Linten, G Groeseneken: "Distribution Function Based Simulations of Hot-Carrier Degradation in Nanowire FETs"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 07.10.2018 - 11.10.2018; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3, doi:10.1109/IIRW.2018.8727081. BibTeX |
| 1846. | H. Kosina, M. Kampl: "Effect of Electron-Electron Scattering on the Carrier Distribution in Semiconductor Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0, 18 - 21 doi:10.1109/SISPAD.2018.8551734. BibTeX |
| 1845. | J. Weinbub, M. Ballicchia, M. Nedjalkov: "Electron Interference in a Double-Dopant Potential Structure"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 25.11.2018 - 30.11.2018; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2018), ISBN: 978-3-901578-32-8, 52 - 53. BibTeX |
| 1844. | V. Sverdlov, S. Selberherr: "Electron Spin for Modern and Future Microelectronics"; Talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia; (invited) 01.10.2018 - 05.10.2018; in "Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE) 2018", (2018), ISBN: 978-5-317-05917-0, 7. BibTeX |
| 1843. | S. Foster, M. Thesberg, V. Vargiamidis, N. Neophytou: "Electronic Transport Simulations for Advanced Thermoelectric Materials"; Poster: Thermoelectric Network UK Meeting, Edinburgh, UK; 14.02.2018. BibTeX |
| 1842. | N. Neophytou, S. Foster, V. Vargiamidis, M. Thesberg: "Electronic Transport Simulations in Materials with Embedded Nano-Inclusions for Enhanced Thermoelectric Power Factors"; Talk: Annual March Meeting of the American Physical Society, Los Angeles, USA; 05.03.2018 - 09.03.2018; . BibTeX |
| 1841. | A. Lahlalia, O. Le Neel, R. Shankar, S. Selberherr, L. Filipovic: "Enhanced Sensing Performance of Integrated Gas Sensor Devices"; Poster: EUROSENSORS, Graz, Austria; 09.09.2018 - 12.09.2018; in "Proceedings of EUROSENSORS 2018", (2018), ISBN: 978-3-00-025217-4, 5 page(s) doi:10.3390/proceedings2131508. BibTeX |
| 1840. | L. Gnam, S. Selberherr, J. Weinbub: "Evaluation of Serial and Parallel Shared-Memory Distance-1 Graph Coloring Algorithms"; Talk: Ninth International Conference on Numerical Methods and Applications (NM&A'18), Borovets, Bulgaria; 20.08.2018 - 24.08.2018; in "Book of Abstracts of the Ninth International Conference on Numerical Methods and Applications (NM&A'18)", (2018), 52. BibTeX |
| 1839. | K. Puschkarsky, H. Reisinger, C. Schlünder, W. Gustin, T. Grasser: "Fast Acquisition of Activation Energy Maps Using Temperature Ramps for Lifetime Modeling of BTI"; Talk: European Solid-State Device Research Conference (ESSDERC), Dresden, Germany; 03.09.2018 - 06.09.2018; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2018), 218 - 221. BibTeX |
| 1838. | V. Sverdlov, A. Makarov, S. Selberherr: "Fast, Reliable, and Field-free Perpendicular Magnetization Reversal in Advanced Spin-Orbit Torque MRAM by Two-pulse Switching"; Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; (invited) 25.11.2018 - 30.11.2018; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2018), ISBN: 978-3-901578-32-8, 124 - 125. BibTeX |
| 1837. | K. Rupp, F. Rudolf, J. Weinbub: "Features of ViennaCL in PETSc"; Talk: Austrian HPC Meeting (AHPC), Linz; 19.02.2018 - 21.02.2018; in "Book of Abstracts of the 2018 Austrian HPC Meeting (AHPC)", (2018), 18. BibTeX |
| 1836. | A. Makarov, V. Sverdlov, S. Selberherr: "Field-free Fast Reliable Deterministic Switching in Perpendicular Spin-Orbit Torque MRAM Cells"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0, 186 - 189 doi:10.1109/SISPAD.2018.8551716. BibTeX |
| 1835. | L. Filipovic, M. Kampl, T. Knobloch, G. Rzepa, J. Weinbub: "Ihr Smartphone - Ein Supercomputer vor 20 Jahren. Ein Einblick in die Mikro- und Nanoelektronik (mit Virtual Reality)"; Talk: Lange Nacht der Forschung 2018, Wien; 13.04.2018. BibTeX |
| 1834. | C. Medina-Bailón, T. Sadi, M. Nedjalkov, J. Lee, S. Berrada, H. Carillo-Nunez, V. Georgiev, S. Selberherr, A. Asenov: "Impact of the Effective Mass on the Mobility in Si Nanowire Transistors"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0, 297 - 300 doi:10.1109/SISPAD.2018.8551630. BibTeX |
| 1833. | V. Simonka, A. Hössinger, S. Selberherr, J. Weinbub: "Investigation of Post-Implantation Annealing for Phosphorus-Implanted 4H-Silicon Carbide"; Talk: International Conference on Microelectronic Devices and Technologies (MicDAT), Barcelona, Spain; 20.06.2018 - 22.06.2018; in "Proceedings of the International Conference on Microelectronic Devices and Technologies (MicDAT)", (2018), 42 - 44. BibTeX |
| 1832. | V. Sverdlov, A. Makarov, S. Selberherr: "Magnetic Field-Free Fast Reliable Switching by Spin-Orbit Torque in Advanced MRAM"; Poster: Micromagnetics: Analysis, Numerics, Applications (MANA), Vienna; 08.11.2018 - 09.11.2018; in "Proceedings of Micromagnetics: Analysis, Numerics, Applications (MANA) 2018", (2018), 32. BibTeX |
| 1831. | L. Filipovic, R. Orio: "Modeling the Influence of Grains and Material Interfaces on Electromigration"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0, 83 - 87 doi:10.1109/SISPAD.2018.8551746. BibTeX |
| 1830. | G. Indalecio, H. Kosina: "Monte Carlo Simulation of Electron-electron Interactions in Bulk Silicon"; Poster: The 12th International Conference on Scientific Computing in Electrical Engineering (SCEE 2018), Taormina; 23.09.2018 - 27.09.2018; in "Book of Abstracts of The 12th International Conference on Scientific Computing in Electrical Engineering", (2018), 97 - 98. BibTeX |
| 1829. | J. Lee, C. Medina-Bailón, S. Berrada, H. Carillo-Nunez, T. Sadi, V. Georgiev, M. Nedjalkov, S. Selberherr, A. Asenov: "Multi-Scale Simulation Study of the Strained Si Nanowire FETs"; Talk: IEEE Nanotechnology Materials and Devices Conference (NMDC), Portland, USA; 14.10.2018 - 17.10.2018; in "Proceedings of IEEE Nanotechnology Materials and Devices Conference (NMDC)", (2018), ISBN: 978-1-5386-1016-9, doi:10.1109/NMDC.2018.8605884. BibTeX |
| 1828. | J. Ghosh, D. Osintsev, V. Sverdlov, S. Ganguly: "Multilevel Parallelization Approach to Estimate Spin Lifetime in Silicon: Performance Analysis"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0, 79 - 80. BibTeX |
| 1827. | T. Grasser: "Multiscale Reliability Modeling"; Talk: IEEE EDS Distinguished Lecture at the SINANO Sommer School 2018, Tarragona, Spain; (invited) 25.09.2018. BibTeX |
| 1826. | J. Franco, Z. Wu, G. Rzepa, L. Ragnarsson, H. Dekkers, A. Vandooren, G. Groeseneken, N. Horiguchi, N. Collaert, D. Linten, T. Grasser, B. Kaczer: "On the Impact of the Gate Metal Work-Function on the Charge Trapping Component of BTI"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, USA; 07.10.2018 - 11.10.2018; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3, 1 - 4 doi:10.1109/IIRW.2018.8727089. BibTeX |
| 1825. | Yu. Illarionov: "On the Way to Commercial 2D Electronics..."; Talk: 2nd Zhejiang Sci-Tech University Forum for International Young Scholars, Hangzhou, China; (invited) 25.11.2018 - 27.11.2018; . BibTeX |
| 1824. | P. Manstetten: "Performance Improvements For Advanced Physical Etching And Deposition In Memory Technologies"; Talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA; (invited) 09.10.2018. BibTeX |
| 1823. | M. Ballicchia, J. Weinbub, I. Dimov, M. Nedjalkov: "Recent Advances of the Wigner Signed-Particle Approach"; Talk: Annual Meeting of the Bulgarian Section of SIAM (BGSIAM), Sofia, Bulgaria; (invited) 18.12.2018 - 20.12.2018; in "Abstracts Annual Meeting of the Bulgarian Section of SIAM (BGSIAM)", (2018), ISSN: 1313-3357, 18 - 19. BibTeX |
| 1822. | Yu. Illarionov, A.J. Molina- Mendoza, M. Waltl, T. Knobloch, M. M. Furchi, T. Mueller, T. Grasser: "Reliability of next-generation field-effect transistors with transition metal dichalcogenides"; Talk: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 11.03.2018 - 15.03.2018; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), ISBN: 978-1-5386-5479-8, 6 page(s) doi:10.1109/IRPS.2018.8353605. BibTeX |
| 1821. | V. Sverdlov, A. Makarov, S. Selberherr: "Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell Without External Magnetic Field"; Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA; 08.07.2018 - 11.07.2018; in "Proceedings of the 22nd World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2018), ISBN: 978-1-941763-81-0, 30 - 32. BibTeX |
| 1820. | M. Benam, M. Wołoszyn, S. Selberherr: "Self-consistent Monte Carlo Solution of Wigner and Poisson Equations Using an Efficient Multigrid Approach"; Talk: Annual Meeting of the Bulgarian Section of SIAM (BGSIAM), Sofia, Bulgaria; 18.12.2018 - 20.12.2018; in "Abstracts Annual Meeting of the Bulgarian Section of SIAM (BGSIAM)", (2018), ISSN: 1313-3357, 20 - 21. BibTeX |
| 1819. | V. Sverdlov, S. Selberherr: "Shot Noise Enhancement at Spin-dependent Hopping"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; (invited) 25.11.2018 - 30.11.2018; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2018), ISBN: 978-3-901578-32-8, 6 - 7. BibTeX |
| 1818. | N. Neophytou, S. Foster, V Vargiamaidis, D. Chakraborty, L Oliveira, C Kumarasinghe, M. Thesberg: "Simulation Studies of Nanostructured Thermoelectric Materials"; Talk: IEEE International Conference on Nanotechnology (NANO), Cork, Ireland; 23.07.2018 - 26.07.2018; in "Proceedings of the IEEE International Conference on Nanotechnology (NANO)", (2018), doi:10.1109/nano.2018.8626378. BibTeX |
| 1817. | V. Sverdlov, S. Selberherr: "Spin Correlations at Hopping in Magnetic Structures: From Tunneling Magnetoresistance to Single-Spin Transistor"; Talk: SPIE Spintronics, San Diego, CA, USA; (invited) 19.08.2018 - 23.08.2018; in "Proceedings of SPIE Spintronics", (2018), 10732-112. BibTeX |
| 1816. | V. Sverdlov, S. Selberherr: "Spin-Dependent Trap-Assisted Tunneling: A Path Towards a Single Spin Switch"; Poster: Advanced Research Workshop on Future Trends in Microelectronics: Vingt Ans Après, Sardinia, Italy; 10.06.2018 - 16.06.2018; in "Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après", (2018), 49. BibTeX |
| 1815. | A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, J. Weinbub: "Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0, 336 - 339 doi:10.1109/SISPAD.2018.8551728. BibTeX |
| 1814. | C. Medina-Bailón, T. Sadi, M. Nedjalkov, J. Lee, S. Berrada, H. Carillo-Nunez, V. Georgiev, S. Selberherr, A. Asenov: "Study of the 1D Scattering Mechanisms´ Impact on the Mobility in Si Nanowire Transistors"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0, 15 - 16. BibTeX |
| 1813. | J. Woerle, V. Simonka, E. Müller, A. Hössinger, H. Sigg, S. Selberherr, J. Weinbub, M. Camarda, U. Grossner: "Surface Morphology of 4H-SiC After Thermal Oxidation"; Talk: European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham, UK; 02.09.2018 - 06.09.2018; in "Proceedings of the European Conference on Silicon Carbide and Related Materials (ECSCRM)", (2018), . BibTeX |
| 1812. | V. Sverdlov, A. Makarov, S. Selberherr: "Switching Current Reduction in Advanced Spin-Orbit Torque MRAM"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0, 57 - 58. BibTeX |
| 1811. | L. Filipovic, A. Lahlalia, S. Selberherr: "System-on-Chip Sensor Integration in Advanced CMOS Technology"; Talk: 233rd ECS Meeting (ECS), Seattle, Washington, USA; (invited) 13.05.2018 - 17.05.2018; in "Proceedings of the 233rd ECS Meeting (ECS)", (2018), ISSN: 2151-2043, . BibTeX |
| 1810. | A. Makarov, V. Sverdlov, S. Selberherr: "Two-Pulse Sub-ns Switching of a Perpendicular Spin-Orbit Torque MRAM Cell Without External Magnetic Field"; Poster: Advanced Research Workshop on Future Trends in Microelectronics: Vingt Ans Après, Sardinia, Italy; 10.06.2018 - 16.06.2018; in "Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après", (2018), 51. BibTeX |
| 1809. | A. Makarov, V. Sverdlov, S. Selberherr: "Ultra-Fast Switching of a Free Magnetic Layer with out-of-Plane Magnetization in Spin-Orbit Torque MRAM Cells"; Talk: 233rd ECS Meeting (ECS), Seattle, Washington, USA; 13.05.2018 - 17.05.2018; in "Proceedings of the 233rd ECS Meeting (ECS)", (2018), 85/213, ISSN: 2151-2043, . BibTeX |
| 1808. | K. Puschkarsky, T. Grasser, T. Aichinger, W. Gustin, H. Reisinger: "Understanding and Modeling Transient Threshold Voltage Instabilities in SiC MOSFETs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; (invited) 11.03.2018 - 15.03.2018; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), 3B.5-1 - 3B.5-10. BibTeX |
| 1807. | X. Klemenschits, S. Selberherr, L. Filipovic: "Unified Feature Scale Model for Etching in SF6 and Cl Plasma Chemistries"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0, 65 - 66. BibTeX |
| 1806. | V. Sverdlov, S. Selberherr: "A Single-Spin Switch"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; (invited) 26.11.2017 - 01.12.2017; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2017), ISBN: 978-3-901578-31-1, 93 - 94. BibTeX |
| 1805. | P. Manstetten, A. Hössinger, J. Weinbub, S. Selberherr: "Accelerated Direct Flux Calculations Using an Adaptively Refined Icosahedron"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2017), ISBN: 978-4-86348-612-6, 73 - 76 doi:10.23919/SISPAD.2017.8085267. BibTeX |
| 1804. | Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, J. Kim, D. Akinwande, T. Grasser: "Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs"; Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan; 28.02.2017 - 02.03.2017; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2017), ISBN: 978-1-5090-4661-4, 114 - 115 doi:10.1109/EDTM.2017.7947532. BibTeX |
| 1803. | T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Analysis of a Spin-Transfer Torque Based Copy Operation of a Buffered Magnetic Processing Environment"; Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA; 08.07.2017 - 11.07.2017; in "Proceedings of the 21st World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2017), ISBN: 978-1-941763-59-9, 142 - 146. BibTeX |
| 1802. | A. Chasin, J. Franco, B. Kaczer, V. Putcha, P. Weckx, R. Ritzenthaler, H. Mertens, N. Horiguchi, D. Linten, G. Rzepa: "BTI Reliability and Time-Dependent Variability of Stacked Gate-All-Around Si Nanowire Transistors"; Poster: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 5C-4.1 - 5C-4.7. BibTeX |
| 1801. | B. Kaczer, G. Rzepa, J. Franco, P. Weckx, A. Chasin, V. Putcha, E. Bury, M. Simicic, Ph. J. Roussel, G. Hellings, A. Veloso, P. Matagne, T. Grasser, D. Linten: "Benchmarking Time-Dependent Variability of Junctionless Nanowire FETs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 2D-6.1 - 2D-6.7. BibTeX |
| 1800. | A. Grill, B. Stampfer, M. Waltl, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, T. Grasser: "Characterization and Modeling of Single Defects in GaN/AlGaN Fin-MIS-HEMTs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in "Proceedings of IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 3B-5.1 - 3B-5.5 doi:10.1109/IRPS.2017.7936285. BibTeX |
| 1799. | J. Franco, V. Putcha, A. Vais, S. Sioncke, N. Waldron, D. Zhou, G. Rzepa, P. Roussel, G. Groeseneken, M. Heyns, N. Collaert, D. Linten, T. Grasser, B. Kaczer: "Characterization of Oxide Defects in InGaAs MOS Gate Stacks for High-Mobility n-Channel MOSFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; (invited) 02.12.2017 - 06.12.2017; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2017), 4 page(s) doi:10.1109/IEDM.2017.8268347. BibTeX |
| 1798. | T. Grasser: "Charge Trapping and Time-dependent Variability in CMOS Transistors"; Talk: IEEE EDS Distinguished Lecture, Stuttgart,Germany; (invited) 24.01.2017. BibTeX |
| 1797. | T. Grasser: "Charge Trapping and Time-dependent Variability in Low-Voltage MOS Transistors"; Talk: Short Course at IEEE EDS Electron Devices Technology and Manufacturing Conference, Toyama, Japan; (invited) 28.02.2017. BibTeX |
| 1796. | M. Ballicchia, J. Weinbub, M. Nedjalkov, S. Selberherr: "Classical and Quantum Electron Evolution with a Repulsive Dopant"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; (invited) 26.11.2017 - 01.12.2017; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2017), ISBN: 978-3-901578-31-1, 105 - 106. BibTeX |
| 1795. | P. Manstetten, V. Simonka, G. Diamantopoulos, L. Gnam, A. Makarov, A. Hössinger, J. Weinbub: "Computational and Numerical Challenges in Semiconductor Process Simulation"; Talk: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 27.02.2017 - 03.03.2017; in "CSE17 Abstracts", (2017), 46. BibTeX |
| 1794. | V. Sverdlov, J. Weinbub, S. Selberherr: "Current in Magnetic Tunnel Junctions at Spin-Dependent Hopping"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; (invited) 26.11.2017 - 01.12.2017; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2017), ISBN: 978-3-901578-31-1, 87 - 88. BibTeX |
| 1793. | T. Grasser: "Defects in 3D and 2D Field Effect Transistors: Characterization and Modeling"; Talk: IEEE EDS Distinguished Lecture, Aachen, Germany; (invited) 23.11.2017. BibTeX |
| 1792. | G. Rzepa, J. Franco, A. Subirats, M. Jech, A. Chasin, A. Grill, M. Waltl, T. Knobloch, B. Stampfer, T. Chiarella, N. Horiguchi, L. Ragnarsson, D. Linten, B. Kaczer, T. Grasser: "Efficient Physical Defect Model Applied to PBTI in High-κ Stacks"; Poster: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, XT-11.1 - XT-11.6. BibTeX |
| 1791. | V. Sverdlov, J. Weinbub, S. Selberherr: "Electron Spin at Work in Modern and Emerging Devices"; Talk: Energy-Materials-Nanotechnology Meeting on Quantum (EMN), Wien, Austria; (invited) 18.06.2017 - 22.06.2017; in "Abstracts of the Energy-Materials-Nanotechnology Meeting on Quantum (EMN)", (2017), 31 - 33. BibTeX |
| 1790. | N. Neophytou, M. Thesberg: "Electronic Transport Simulations in Nano-Crystalline Materials for Enhanced Thermoelectric Power Factors"; Talk: APS March Meeting, New Orleans, USA; 13.03.2017 - 17.03.2017; . BibTeX |
| 1789. | N. Neophytou, S. Foster, M. Thesberg, H. Kosina: "Electronic Transport Simulations in Nanocomposites - Exploring the Features that Optimize the Thermoelectric Power Factor"; Talk: E-MRS Spring Meeting, Strasburg, France; 22.05.2017 - 26.05.2017; . BibTeX |
| 1788. | N. Neophytou, M. Thesberg: "Electronic Transport Simulations in Nanostructured Materials for Large Thermoelectric Power Factors"; Talk: European Congress and Exhibition on Advanced Materials and Processes (EUROMAT), Thessaloniki, Greece; 18.09.2017 - 22.09.2017; . BibTeX |
| 1787. | Yu. Illarionov, M. Waltl, K. Smithe, E. Pop, T. Grasser: "Encapsulated MoS2 FETs with Improved Performance and Reliability"; Talk: GRAPCHINA, Nanjing, China; 24.09.2017 - 26.09.2017; in "Proceedings of the GRAPCHINA 2017", (2017), 1 page(s) . BibTeX |
| 1786. | V. Sverdlov, J. Weinbub, S. Selberherr: "Enhanced Shot Noise as a Signature of Trap-Assisted Tunneling in Magnetic Tunnel Junctions: a Monte Carlo Approach"; Talk: 25th International Symposium on Nanostructures: Physics and Technology, Sankt Petersburg, Russland; 26.06.2017 - 30.06.2017; in "Proceedings of the 25th International Symposium on Nanostructures: Physics and Technology", (2017), ISBN: 978-5-7422-5779-0, 132 - 133. BibTeX |
| 1785. | G. Diamantopoulos, J. Weinbub, A. Hössinger, S. Selberherr: "Evaluation of the Shared-Memory Parallel Fast Marching Method for Re-Distancing Problems"; Talk: International Conference on Computational Science and Its Applications (ICCSA), Trieste, Italy; 03.07.2017 - 06.07.2017; in "Proceedings of the International Conference on Computational Science and Its Applications (ICCSA)", (2017), ISBN: 978-1-5386-3893-4, 1 - 8 doi:10.1109/ICCSA.2017.7999648. BibTeX |
| 1784. | R. Mills, M. Adams, J. Brown, M. Fabien, T. Isaac, M. Knepley, K. Rupp, B. Smith, H. Zhang: "Experiences, Optimizations, and Future Directions with Petsc on the 2nd Generation ("Knights Landing") Intel Xeon Phi Processor"; Talk: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 27.02.2017 - 03.03.2017; in "CSE17 Abstracts", (2017), 370 - 371. BibTeX |
| 1783. | S. Selberherr, T. Windbacher, A. Makarov, V. Sverdlov: "Exploiting Spin-Transfer Torque for Non-Volatile Computing"; Talk: World Congress of Smart Materials (WCSM), Bangkok; (invited) 16.03.2017 - 18.03.2017; in "Book of Abstracts of BIT's 3rd Annual World Congress of Smart Materials-2017", (2017), 130. BibTeX |
| 1782. | S. Foster, M. Thesberg, N. Neophytou: "Fully Quantum Mechanical Transport Simulations for the Calculation of the Thermoelectric Power Factor in Nanocomposite Materials"; Talk: European Conference on Thermoelectrics (ECT), Padova, Italy; 25.09.2017 - 27.09.2017; in "Book of Abstracts 15th European Conference on Thermoelectrics", (2017), . BibTeX |
| 1781. | M. Kampl, H. Kosina, O. Baumgartner: "Hot Carrier Study Including e-e Scattering Based on a Backward Monte Carlo Method"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2017), ISBN: 978-4-86348-612-6, 293 - 296 doi:10.23919/SISPAD.2017.8085322. BibTeX |
| 1780. | A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. Vexler, D. Linten, T. Grasser: "Hot-Carrier Degradation in FinFETs: Modeling, Peculiarities, and Impact of Device Topology"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 02.12.2017 - 06.12.2017; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2017), ISBN: 978-1-5386-3559-9, 310 - 313 doi:10.1109/IEDM.2017.8268381. BibTeX |
| 1779. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser: "Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors"; Talk: Meeting of the Electrochemical Society (ECS), National Harbor, Maryland, USA; (invited) 01.10.2017 - 05.10.2017; in "Meeting Abstracts", (2017), MA2017-02(14): 837, 2 page(s) . BibTeX |
| 1778. | T. Grasser, M. Waltl, K. Puschkarsky, B. Stampfer, G. Rzepa, G. Pobegen, H. Reisinger, H. Arimura, B. Kaczer: "Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up after BTI Stress"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 6A-2.1 - 6A-2.6. BibTeX |
| 1777. | S. Selberherr: "Integrated Gas Sensors for Wearable Electronics"; Talk: IEEE EDS Distinguished Lecture, The Hong Kong Polytechnic University, Hong Kong; (invited) 12.04.2017. BibTeX |
| 1776. | M. Kampl, H. Kosina: "Investigation of Hot-Carrier Effects Using a Backward Monte Carlo Method and Full Bands"; Poster: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2017), 147 - 148. BibTeX |
| 1775. | V. Sverdlov, H. Mahmoudi, T. Windbacher, A. Makarov, J. Weinbub, S. Selberherr: "MTJs - Spin-Based Binary Memristors for Non-Volatile Memory and Logic Applications"; Talk: Energy-Materials-Nanotechnology Meeting on Memristive Switching & Network (EMN), Milan, Italy; (invited) 14.08.2017 - 18.08.2017; in "Abstracts of the Energy-Materials-Nanotechnology Meeting on Memristive Switching & Network (EMN)", (2017), 33 - 34. BibTeX |
| 1774. | L. Filipovic, R.L. de Orio, W. H. Zisser, S. Selberherr: "Modeling Electromigration in Nanoscaled Copper Interconnects"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2017), ISBN: 978-4-86348-612-6, 161 - 164 doi:10.23919/SISPAD.2017.8085289. BibTeX |
| 1773. | V. Sverdlov, J. Weinbub, S. Selberherr: "Modeling Spin-Dependent Phenomena for New Device Applications"; Talk: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; (invited) 27.02.2017 - 03.03.2017; in "CSE17 Abstracts", (2017), 45 - 46. BibTeX |
| 1772. | V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide"; Poster: International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington D.C., USA; 17.09.2017 - 22.09.2017; in "Proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM)", (2017), . BibTeX |
| 1771. | V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "Modeling of Electrical Activation Ratios of Phosphorus and Nitrogen Doped Silicon Carbide"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2017), ISBN: 978-4-86348-612-6, 125 - 128 doi:10.23919/SISPAD.2017.8085280. BibTeX |
| 1770. | T. Sadi, E. Towie, M. Nedjalkov, A. Asenov, S. Selberherr: "Monte Carlo Particles in Quantum Wires: Effects of the Confinement"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 05.06.2017 - 09.06.2017; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2017), 89 - 90. BibTeX |
| 1769. | S. Foster, D. Chakraborty, M. Thesberg, H. Kosina, N. Neophytou: "Monte Carlo Simulations for Extracting the Power Factor in 1D Systems"; Talk: EPRSC Thermoelectric Network Meeting, Manchester, UK; 14.02.2017 - 15.02.2017; . BibTeX |
| 1768. | M. Thesberg, H. Kosina: "NEGF Through Finite-Volume Discretization"; Talk: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2017), 173 - 174. BibTeX |
| 1767. | V. Simonka: "Natancni Fizikalni Modeli 3D Simulatorjev Proizvodnje Mikroelektronskih Naprav"; Talk: Faculty of Natural Sciences and Mathematics, University of Maribor, Slovenia; (invited) 26.01.2017. BibTeX |
| 1766. | V. Sverdlov, A. Makarov, J. Weinbub, S. Selberherr: "Non-Volatility by Spin in Modern Nanoelectronics"; Talk: International Conference on Microelectronics (MIEL), Nis, Serbia; (invited) 09.10.2017 - 11.10.2017; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2017), ISBN: 978-1-5386-2562-0, 7 - 14 doi:10.1109/MIEL.2017.8190061. BibTeX |
| 1765. | J. Cervenka, L. Filipovic: "Numerical Aspects of the Deterministic Solution of the Wigner Equation"; Poster: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017 in "Book of Abstracts of the International Wigner Workshop (IW2)", (2017), ISBN: 978-3-200-05129-4, 42 - 43. BibTeX |
| 1764. | R. Kosik, M. Kampl, H. Kosina: "On the Characteristic Neumann Equation and the Wigner Equation"; Talk: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017 in "Book of Abstracts of the International Wigner Workshop (IW2)", (2017), ISBN: 978-3-200-05129-4, 26 - 27. BibTeX |
| 1763. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovsky, M. Jech, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser: "Physical Modeling of the Hysteresis in MoS2 Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium; 11.09.2017 - 14.09.2017; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2017), 284 - 287 doi:10.1109/ESSDERC.2017.8066647. BibTeX |
| 1762. | P. Sanan, O. Schenk, M. Bollhoefer, K. Rupp, D. May: "Preconditioners for Stokes Flow with Highly Heterogeneous Viscosity Structure: Saddle-Point Smoothing Via Local Incomplete Factorization"; Talk: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 27.02.2017 - 03.03.2017; in "CSE17 Abstracts", (2017), 258. BibTeX |
| 1761. | Yu. Illarionov, M. Waltl, T. Knobloch, G. Rzepa, T. Grasser: "Reliability Perspective of 2D Electronics"; Talk: International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Vietnam; 25.04.2017 - 30.04.2017; . BibTeX |
| 1760. | Yu. Illarionov, M. Waltl, M. Jech, J. Kim, D. Akinwande, T. Grasser: "Reliability of Black Phosphorus Field-Effect Transistors with Respect to Bias-Temperature and Hot-Carrier Stress"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1, 6A-6.1 - 6A-6.6 doi:10.1109/IRPS.2017.7936338. BibTeX |
| 1759. | C. Ostermaier, P. Lagger, M. Reiner, A. Grill, R. Stradiotto, G. Pobegen, T. Grasser, R. Pietschnig, D. Pogany: "Review of bias-temperature instabilities at the III-N/dielectric interface"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordequx, Frankreich; 25.09.2017 - 28.09.2017; . BibTeX |
| 1758. | K. Rupp: "Semiconductor Device Simulation Approaches for Massively Parallel Computing Architectures"; Talk: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 27.02.2017 - 03.03.2017; . BibTeX |
| 1757. | V. Sverdlov, S. Selberherr: "Shot noise at spin-dependent hopping in tunnel junctions with ferromagnetic electrodes"; Talk: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Warsaw, Poland; (invited) 28.05.2017 - 30.05.2017; in "Proceedings of the ETCMOS 2017", (2017), ISBN: 1927500869, 57. BibTeX |
| 1756. | V. Sverdlov, S. Selberherr: "Shot noise at spin-dependent hopping in tunnel junctions with ferromagnetic electrodes"; Talk: APS March Meeting, New Orleans, USA; 13.03.2017 - 17.03.2017; in "Bulletin of the APS April Meeting 2017", (2017), ISSN: 0003-0503, . BibTeX |
| 1755. | G. Meller, S. Selberherr: "Simulation of Injection Currents into Disordered Molecular Conductors"; Poster: International Conference on Advanced Nano Materials (ANM), Aveiro, Portugal; 19.07.2017 - 21.07.2017; in "Proceedings of the 9thInternational Conference on Advanced Nano Materials (ANM)", (2017), . BibTeX |
| 1754. | V. Sverdlov, J. Weinbub, S. Selberherr: "Spin-Based Non-Volatile Memory and Logic in Modern Nanoelectronics"; BIT's Annual World Congress of Nano Science & Technology, Fukuoka; (invited) 24.10.2017 - 26.10.2017; in "Abstracts of the BIT's 7th Annual World Congress of Nano Science & Technology-2017", (2017), 343. BibTeX |
| 1753. | V. Sverdlov, J. Weinbub, S. Selberherr: "Spin-Dependent Trap-Assisted Tunneling in Magnetic Tunnel Junctions: A Monte Carlo Study"; Talk: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2017), 88 - 90. BibTeX |
| 1752. | V. Sverdlov, J. Weinbub, S. Selberherr: "Spintronics as a Non-Volatile Complement to Nanoelectronics"; Talk: International Conference on Microelectronics, Devices and Materials (MIDEM), Ljubljana, Slovenia; (invited) 04.10.2017 - 06.10.2017; in "Proceedings of the 53rd International Conference on Microelectronics, Devices and Materials (MIDEM 2017)", (2017), ISBN: 978-961-92933-7-9, 10 page(s) . BibTeX |
| 1751. | S. Selberherr: "The Evolution and Potential Future of Microelectronics"; Talk: IEEE EDS Distinguished Lecture, The Hong Kong Polytechnic University, Hong Kong; (invited) 12.04.2017. BibTeX |
| 1750. | B. Ullmann, M. Jech, S. E. Tyaginov, M. Waltl, Yu. Illarionov, A. Grill, K. Puschkarsky, H. Reisinger, T. Grasser: "The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects"; Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 04.04.2017 - 06.04.2017; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1, XT-10.1 - XT-10.6 doi:10.1109/IRPS.2017.7936424. BibTeX |
| 1749. | K. Puschkarsky, H. Reisinger, T. Aichinger, W. Gustin, T. Grasser: "Threshold Voltage Hysteresis in SiC MOSFETs and Its Impact on Circuit Operation"; Talk: IEEE International Integrated Reliability Workshop (IIRW), Fallen Leaf Lake, CA, USA; 08.10.2017 - 12.10.2017; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2017), 1 - 5. BibTeX |
| 1748. | L. Gnam, J. Weinbub, A. Hössinger, S. Selberherr: "Towards a Metric for an Automatic Hull Mesh Coarsening Strategy"; Talk: Vienna Young Scientists Symposium (VSS), Wien, Österreich; 01.06.2017 - 02.06.2017; in "Proceedings of the Vienna Young Scientists Symposium", (2017), ISBN: 978-3-9504017-5-2, 118 - 119. BibTeX |
| 1747. | L. Gnam, J. Weinbub, K. Rupp, F. Rudolf, S. Selberherr: "Using Graph Partitioning and Coloring for Flexible Coarse-Grained Shared-Memory Parallel Mesh Adaptation"; Talk: International Meshing Roundtable (IMR), Barcelona, Spanien; 18.09.2017 - 21.09.2017; in "Proceedings of the 26th International Meshing Roundtable (IMR26)", (2017), 5 page(s) . BibTeX |
| 1746. | F. Rudolf, A. Morhammer, K. Rupp, J. Weinbub: "VSC School Project: Performance Enhancements of Algebraic Multigrid Methods in ViennaCL"; Talk: Austrian HPC Meeting (AHPC), Grundlsee; 01.03.2017 - 03.03.2017; in "Book of Abstracts of the 2017 Austrian HPC Meeting (AHPC)", (2017), 1 page(s) . BibTeX |
| 1745. | P. Ellinghaus, M. Nedjalkov, J. Weinbub, S. Selberherr: "Wigner Analysis of Surface Roughness in Quantum Wires"; Talk: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017 in "Book of Abstracts of the International Wigner Workshop (IW2)", (2017), ISBN: 978-3-200-05129-4, 40 - 41. BibTeX |
| 1744. | P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr: "Wigner Modelling of Surface Roughness in Quantum Wires"; Poster: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2017), 171 - 172. BibTeX |
| 1743. | J. Weinbub, M. Nedjalkov, I. Dimov, S. Selberherr: "Wigner-Signed Particles Study of Double Dopant Quantum Effects"; Poster: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017 in "Book of Abstracts of the International Wigner Workshop (IW2)", (2017), ISBN: 978-3-200-05129-4, 50 - 51. BibTeX |
| 1742. | K. Rupp, J. Weinbub: "A Computational Scientist's Perspective on Current and Future Hardware Architectures"; Talk: Austrian HPC Meeting (AHPC), Grundlsee, Austria; 22.02.2016 - 24.02.2016; in "Book of Abstracts of the 2016 Austrian HPC Meeting (AHPC)", (2016), 24. BibTeX |
| 1741. | P. Sharma, S. E. Tyaginov, S. E. Rauch, J. Franco, B. Kaczer, A. Makarov, M. Vexler, T. Grasser: "A Drift-Diffusion-Based Analytic Description of the Energy Distribution Function for Hot-Carrier Degradation in Decananometer nMOSFETs"; Talk: European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland; 12.09.2016 - 15.09.2016; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2016), ISBN: 978-1-5090-2969-3, 428 - 431 doi:10.1109/ESSDERC.2016.7599677. BibTeX |
| 1740. | S. Papaleo, H. Ceric: "A Finite Element Method Study of Delamination at the Interface of the TSV Interconnects"; Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA USA; 17.04.2016 - 21.04.2016; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), ISBN: 978-1-4673-9136-8, PA-2-1 - PA-2-4 doi:10.1109/IRPS.2016.7574626. BibTeX |
| 1739. | Yu. Illarionov, G. Rzepa, M. Waltl, H. Pandey, S. Kataria, V. Passi, M. Lemme, T. Grasser: "A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETs"; Talk: Device Research Conference, Newark, Delaware, USA; 19.06.2016 - 22.06.2016; in "74th Device Research Conference Digest", (2016), ISBN: 978-1-5090-2827-6, 89 - 90. BibTeX |
| 1738. | K. Giering, G.A. Rott, G. Rzepa, H. Reisinger, A. Puppala, T. Reich, W. Gustin, T. Grasser, R. Jancke: "Analog-circuit NBTI Degradation and Time-dependent NBTI Variability: An Efficient Physics-Based Compact Model"; Talk: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), 4C-4-1 - 4C-4-6 doi:10.1109/IRPS.2016.7574540. BibTeX |
| 1737. | M. Thesberg, N. Neophytou, H. Kosina: "Calculating the Power Factor of Nano-Composite Materials from Fully Quantum-Mechanical Large-Scale Simulations"; Talk: European Conference on Thermoelectrics (ECT), Lisbon, Portugal; 20.09.2016 - 23.09.2016; in "Book of Abstracts 14th European Conference on Thermoelectrics", (2016), . BibTeX |
| 1736. | G. Rzepa, M. Waltl, W. Gös, B. Kaczer, J. Franco, T. Chiarella, N. Horiguchi, T. Grasser: "Complete Extraction of Defect Bands Responsible for Instabilities in n and pFinFETs"; Talk: International Symposium on VLSI Technology, Honolulu, HI, USA; 14.06.2016 - 16.06.2016; in "2016 Symposium on VLSI Technology Digest of Technical Papers", (2016), ISBN: 978-1-5090-0638-0, 208 - 209. BibTeX |
| 1735. | V. Sverdlov, S. Selberherr: "Effects of Spin Relaxation on Trap-Assisted Tunneling Through Ferromagnetic Metal-Oxide-Semiconductor Structures"; Talk: APS March Meeting, Baltimore, USA; 14.03.2016 - 18.03.2016; in "Bulletin of the American Physical Society (APS March Meeting)", (2016), 61/1, ISSN: 0003-0503, 1 page(s) . BibTeX |
| 1734. | L. Filipovic, S. Selberherr: "Effects of the Deposition Process Variation on the Performance of Open TSVs"; Poster: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 31.05.2016 - 03.06.2016; in "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), ISBN: 978-1-5090-1204-6, 2188 - 2195 doi:10.1109/ECTC.2016.177. BibTeX |
| 1733. | M. Rovitto, H. Ceric: "Electromigration Induced Voiding and Resistance Change in Three-Dimensional Copper Through Silicon Vias"; Talk: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 31.05.2016 - 03.06.2016; in "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), ISBN: 978-1-5090-1204-6, 550 - 556 doi:10.1109/ECTC.2016.49. BibTeX |
| 1732. | A. Selinger, K. Rupp, S. Selberherr: "Evaluation of Mobile ARM-Based SoCs for High Performance Computing"; Talk: High Performance Computing Symposium (HPC), Pasadena, CA, USA; 03.04.2016 - 06.04.2016; in "Proceedings of the 24th High Performance Computing Symposium", (2016), ISBN: 978-1-5108-2318-1, 21:1 - 21:7 doi:10.22360/SpringSim.2016.HPC.022. BibTeX |
| 1731. | N. Neophytou, M. Thesberg, H. Kosina: "Examining the Effectiveness of Energy-Filtering in 1D vs. 2D Structures Using Quantum Mechanical Transport Simulations"; Talk: European Conference on Thermoelectrics (ECT), Lisbon, Portugal; 20.09.2016 - 23.09.2016; in "Book of Abstracts 14th European Conference on Thermoelectrics", (2016), . BibTeX |
| 1730. | V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr: "Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 25.01.2016 - 27.01.2016; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8, 128 - 129. BibTeX |
| 1729. | T. Windbacher, B. Ullmann, A. Grill, J. Weinbub: "Ihr Smartphone - ein Supercomputer vor 20 Jahren. Ein Einblick in die Mikro- und Nanoelektronik"; Talk: European Researchers' Night: beSCIENCEd 2016, Wien; 30.09.2016. BibTeX |
| 1728. | B. Ullmann, A. Grill, P. Manstetten, M. Jech, M. Kampl, W. H. Zisser, L. Filipovic, M. Thesberg, F. Rudolf, T. Windbacher, J. Cervenka, M. Katterbauer, J. Weinbub: "Ihr Smartphone - ein Supercomputer vor 20 Jahren. Ein Einblick in die Mikro- und Nanoelektronik"; Talk: Lange Nacht der Forschung 2016, Wien; 22.04.2016. BibTeX |
| 1727. | L. Filipovic, A. P. Singulani, F. Roger, S. Carniello, S. Selberherr: "Impact of Across-Wafer Variation on the Electrical Performance of TSVs"; Talk: IEEE International Interconnect Technology Conference (IITC), San Jose, CA, USA; 23.05.2016 - 26.05.2016; in "Proceedings of the IEEE International Interconnect Technology Conference (IITC)", (2016), ISBN: 978-1-5090-0386-0, 130 - 132 doi:10.1109/IITC-AMC.2016.7507707. BibTeX |
| 1726. | T. Windbacher, B.G. Malm, V. Sverdlov, M. Östling, S. Selberherr: "Influence of the Free Layer Alignment on the Reliability of a Non-Volatile Magnetic Shift Register"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; (invited) 04.12.2016 - 09.12.2016; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2016), ISBN: 978-3-901578-30-4, 43. BibTeX |
| 1725. | T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Layer Coupling and Read Disturbances in a Buffered Magnetic Logic Environment"; Talk: SPIE Spintronics, San Diego, CA, USA; (invited) 28.08.2016 - 01.09.2016; in "Proceedings of SPIE Spintronics", (2016), 9931-93. BibTeX |
| 1724. | T. Windbacher, H. Mahmoudi, A. Makarov, V. Sverdlov, S. Selberherr: "Logic-in-memory: A Non-Volatile Processing Environment for the Post CMOS Age"; Talk: SISPAD Workshop, Nürnberg, Germany; 05.09.2016 in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), . BibTeX |
| 1723. | V. Sverdlov, A. Makarov, T. Windbacher, S. Selberherr: "Magnetic Field Dependent Tunneling Magnetoresistance through a Quantum Well between Ferromagnetic Contacts"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9, 315 - 318 doi:10.1109/SISPAD.2016.7605210. BibTeX |
| 1722. | T. Windbacher, V. Sverdlov, S. Selberherr: "Magnetic Nonvolatile Processing Environment"; Talk: I International Scientific and Practical Conference Innovation in the Software Systems of Trains, Samara, Russia; (invited) 19.05.2016 - 20.05.2016; in "Program and Abstracts of the I International Scientific and Practical Conference Innovation in the Software Systems of Trains", (2016), 42 - 43. BibTeX |
| 1721. | S. Papaleo, M. Rovitto, H. Ceric: "Mechanical Effects of the Volmer-Weber Growth in the TSV Sidewall"; Talk: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 31.05.2016 - 03.06.2016; in "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), ISBN: 978-1-5090-1204-6, 1617 - 1622 doi:10.1109/ECTC.2016.19. BibTeX |
| 1720. | M. Nedjalkov, J. Weinbub, S. Selberherr: "Modeling Carrier Transport in Nanoscale Semiconductor Devices"; Talk: BIT's Annual World Congress of Nano Science & Technology, Singapore; (invited) 26.10.2016 - 28.10.2016; in "Abstracts of the BIT's 6th Annual World Congress of Nano Science & Technology-2016", (2016), 377. BibTeX |
| 1719. | P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr: "Modeling Neutral Particle Flux in High Aspect Ratio Holes using a One-Dimensional Radiosity Approach"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 25.01.2016 - 27.01.2016; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8, 68 - 69. BibTeX |
| 1718. | L. Filipovic, S. Selberherr: "Modeling the Deposition and Stress Generation in Thin Films for CMOS-Integrated Gas Sensors"; Talk: World Congress of Smart Materials (WCSM), Singapore; (invited) 04.03.2016 - 06.03.2016; in "Proceedings of the BIT's 2nd Annual World Congress of Smart Materials 2016", (2016), 517. BibTeX |
| 1717. | V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr: "Nanoelectronics with Spin"; Talk: World Congress and Expo on Nanotechnology and Materials Science, Dubai, United Arab Emirates; (invited) 04.04.2016 - 06.04.2016; in "Book of Abstracts of the World Congress and Expo on Nanotechnology and Materials Science", (2016), 19 - 20. BibTeX |
| 1716. | M. Waltl, A. Grill, G. Rzepa, W. Gös, J. Franco, B. Kaczer, J. Mitard, T. Grasser: "Nanoscale Evidence for the Superior Reliability of SiGe High-k pMOSFETs"; Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), XT-02-1 - XT-02-6 doi:10.1109/IRPS.2016.7574644. BibTeX |
| 1715. | T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Novel Magnetic Devices for Memory and Non-Volatile Computing Applications"; Talk: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Montreal, QC, Canada; 25.05.2016 - 27.05.2016; in "2016 Conference Program of the Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS)", (2016), 14 page(s) . BibTeX |
| 1714. | S. E. Tyaginov, A. Makarov, M. Jech, J. Franco, P. Sharma, B. Kaczer, T. Grasser: "On the Effect of Interface Traps on the Carrier Distribution Function During Hot-Carrier Degradation"; Poster: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 09.10.2016 - 13.10.2016; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2016), ISBN: 978-1-5090-4193-0, 95 - 98 doi:10.1109/IIRW.2016.7904911. BibTeX |
| 1713. | G. Rescher, G. Pobegen, T. Aichinger, T. Grasser: "On the Subthreshold Drain Current Sweep Hysteresis of 4H-SiC nMOSFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 03.12.2016 - 07.12.2016; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2016), ISBN: 978-1-5090-3902-9, 10.8.1 - 10.8.4 doi:10.1109/IEDM.2016.7838392. BibTeX |
| 1712. | B. Kaczer, S. Amoroso, R. Hussin, A. Asenov, J. Franco, P. Weckx, Ph. J. Roussel, G. Rzepa, T. Grasser, N. Horiguchi: "On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects"; Talk: IEEE International Integrated Reliability Workshop (IIRW), Stanford Sierra Conference Center, S. Lake Tahoe, California, USA; 09.10.2016 - 13.10.2016; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2016), ISBN: 978-1-5090-4192-3, 3 page(s) . BibTeX |
| 1711. | T. Sadi, E. Towie, M. Nedjalkov, C. Riddet, C. Alexander, L. Wang, V. Georgiev, A. Brown, C. Millar, A. Asenov: "One-Dimensional Multi-Subband Monte Carlo Simulation of Charge Transport in Si Nanowire Transistors"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9, 23 - 26 doi:10.1109/SISPAD.2016.7605139. BibTeX |
| 1710. | A. Morhammer, K. Rupp, F. Rudolf, J. Weinbub: "Optimized Sparse Matrix-Matrix Multilication for Multi-Core CPUs, GPUs and MICs"; Talk: Austrian HPC Meeting (AHPC), Grundlsee, Austria; 22.02.2016 - 24.02.2016; in "Book of Abstracts of the 2016 Austrian HPC Meeting (AHPC)", (2016), 23. BibTeX |
| 1709. | K. Rupp, A. Morhammer, T. Grasser, A. Jüngel: "Parallel Deterministic Solution of the Boltzmann Transport Equation for Semiconductors"; Talk: International Workshop on Finite Elements for Microwave Engineering, Florence, Italy; 16.05.2016 - 18.05.2016; in "Proceedings of the 13th Workshop on Finite Elements for Microwave Engineering", (2016), ISBN: 978-88-6655-967-2, 104. BibTeX |
| 1708. | M. Nedjalkov, P. Ellinghaus, J. Weinbub, S. Selberherr, T. Sadi, A. Asenov, L. Wang, S. Amoroso, E. Towie: "Physical Models for Variation-Aware Device Simulation"; Talk: Workshop on Variability-Aware Design Technology Co-Optimization, Nuremberg, Germany; (invited) 05.09.2016. BibTeX |
| 1707. | M. Thesberg, N. Neophytou, M. Pourfath, H. Kosina: "Power Factor Degradation Mechanisms in Energy-Filtering Thermoelectric Materials"; Talk: Energy-Materials-Nanotechnology Meeting on Thermoelectric Materials (EMN), Orlando, USA; (invited) 22.02.2016 - 25.02.2016; . BibTeX |
| 1706. | Yu. Illarionov, M. Waltl, M. M. Furchi, T. Müller, T. Grasser: "Reliability of Single-Layer MoS2 Field-Effect Transistors with SiO2 and hBN Gate Insulators"; Talk: IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2016), 5A-1-1 - 5A-1-6 doi:10.1109/IRPS.2016.7574543. BibTeX |
| 1705. | H. Kosina: "Semiconductor Device Modeling at the Nanoscale"; Talk: 42nd International Conference on Nano Engineering, MNE 2016, Wien; (invited) 19.09.2016 - 23.09.2016; . BibTeX |
| 1704. | J. Weinbub, A. Hössinger: "Shared-Memory Parallelization of the Fast Marching Method Using an Overlapping Domain-Decomposition Approach"; Talk: High Performance Computing Symposium (HPC), Pasadena, CA, USA; 03.04.2016 - 06.04.2016; in "Proceedings of the High Performance Computing Symposium (HPC)", (2016), ISBN: 978-1-5108-2318-1, 18:1 - 18:8 doi:10.22360/SpringSim.2016.HPC.052. BibTeX |
| 1703. | M. Nedjalkov, J. Weinbub, I. Dimov, S. Selberherr: "Signed Particle Interpretation for Wigner-Quantum Electron Evolution"; National Congress of Physical Sciences, Sofia, Bulgaria; (invited) 29.09.2016 - 02.10.2016; in "Abstracts Third National Congress of Physical Sciences", (2016), 1. BibTeX |
| 1702. | V. Sverdlov, T. Windbacher, A. Makarov, S. Selberherr: "Silicon Spintronics"; Talk: Energy-Materials-Nanotechnology Meeting on Magnetic Materials (EMN), Kona, USA; (invited) 21.03.2016 - 24.03.2016; in "Abstracts of the Energy-Materials-Nanotechnology Meeting on Magnetic Materials (EMN)", (2016), 37 - 38. BibTeX |
| 1701. | A. Makarov, V. Sverdlov, T. Windbacher, S. Selberherr: "Silicon Spintronics"; Talk: International Conference on Electronic Materials (ICEM), Singapur; (invited) 04.07.2016 - 08.07.2016; in "Proceedings of the ICEM 2016", (2016), 1 page(s) . BibTeX |
| 1700. | L. Wang, T. Sadi, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov: "Simulation Analysis of the Electro-Thermal Performance of SOI FinFETs"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 25.01.2016 - 27.01.2016; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8, 34 - 35. BibTeX |
| 1699. | V. Sverdlov, S. Selberherr: "Spin-dependent Resonant Tunneling in Ferromagnet-Oxide-Silicon Structures"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Vienna, Austria; 25.01.2016 - 27.01.2016; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8, 116 - 117. BibTeX |
| 1698. | H. Ceric, R. Orio, M. Rovitto: "TCAD Approach for the Assessment of Interconnect Reliability"; Talk: International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP), Bad Schandau, Germany; (invited) 30.05.2016 - 01.06.2016; in "Abstracts of the International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP)", (2016), T21. BibTeX |
| 1697. | Yu. Illarionov, M. Waltl, J. Kim, D. Akinwande, T. Grasser: "Temperature-dependent Hysteresis in Black Phosphorus FETs"; Poster: Graphene Week, Warsaw, Poland; 13.06.2016 - 17.06.2016; in "Proceedings of the 2016 Graphene Week", (2016), . BibTeX |
| 1696. | T. Grasser, M. Waltl, G. Rzepa, W. Gös, Y. Wimmer, A.-M. El-Sayed, A. Shluger, H. Reisinger, B. Kaczer: "The "Permanent" Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing"; Talk: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), 5A-2-1 - 5A-2-8 doi:10.1109/IRPS.2016.7574504. BibTeX |
| 1695. | M. Nedjalkov, J. Weinbub, S. Selberherr: "The Description of Carrier Transport for Quantum Systems"; Talk: Energy Materials Nanotechnology Meeting on Quantum, Phuket, Thailand; (invited) 08.04.2016 - 11.04.2016; in "Book of Abstracts of the Energy Materials Nanotechnology Meeting on Quantum", (2016), 41 - 42. BibTeX |
| 1694. | T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "The Exploitation of Magnetization Orientation Encoded Spin-Transfer Torque for an Ultra Dense Non-Volatile Magnetic Shift Register"; Talk: European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland; 12.09.2016 - 16.09.2016; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2016), ISBN: 978-1-5090-2969-3, 311 - 314 doi:10.1109/ESSDERC.2016.7599648. BibTeX |
| 1693. | V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9, 233 - 236 doi:10.1109/SISPAD.2016.7605190. BibTeX |
| 1692. | V. Sverdlov, J. Ghosh, S. Selberherr: "Universal Dependence of the Spin Lifetime in Silicon Films on the Spin Injection Direction"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; (invited) 04.12.2016 - 09.12.2016; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2016), ISBN: 978-3-901578-30-4, 7. BibTeX |
| 1691. | P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr: "Using One-Dimensional Radiosity to Model Neutral Flux in Convex High Aspect Ratio Structures"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9, 265 - 268 doi:10.1109/SISPAD.2016.7605198. BibTeX |
| 1690. | M. Karner, O. Baumgartner, Z. Stanojevic, F. Schanovsky, G. Strof, Ch. Kernstock, H. W. Karner, G. Rzepa, T. Grasser: "Vertically Stacked Nanowire MOSFETs for Sub-10nm Nodes: Advanced Topography, Device, Variability, and Reliability Simulations"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 03.12.2016 - 07.12.2016; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2016), ISBN: 978-1-5090-3902-9, 30.7.1 - 30.7.4 doi:10.1109/IEDM.2016.7838516. BibTeX |
| 1689. | P. Ellinghaus, M. Nedjalkov, J. Weinbub, S. Selberherr: "Wigner Modelling of Quantum Wires"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; (invited) 04.12.2016 - 09.12.2016; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2016), ISBN: 978-3-901578-30-4, 2. BibTeX |
| 1688. | M. Nedjalkov, J. Weinbub, P. Ellinghaus, S. Selberherr: "Wigner Signed Particles - An Intuitive Alternative of Particle-Wave Duality"; Talk: SEMODAY Meeting, Florence, Italy; (invited) 16.10.2016 - 17.10.2016; . BibTeX |
| 1687. | L. Wang, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov: "3D Electro-Thermal Simulations of Bulk FinFETs with Statistical Variations"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 112 - 115 doi:10.1109/SISPAD.2015.7292271. BibTeX |
| 1686. | Y. Wimmer, W. Gös, A.-M. El-Sayed, A. Shluger, T. Grasser: "A Density-Functional Study of Defect Volatility in Amorphous Silicon Dioxide"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 44 - 47 doi:10.1109/SISPAD.2015.7292254. BibTeX |
| 1685. | P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "A Model for Hot-Carrier Degradation in nLDMOS Transistors Based on the Exact Solution of the Boltzmann Transport Equation Versus the Drift-Diffusion Scheme"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 26.01.2015 - 28.01.2015; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2015), 21 - 24 doi:10.1109/ULIS.2015.7063763. BibTeX |
| 1684. | A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr: "A Novel Method of SOT-MRAM Switching"; Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 29.11.2015 - 04.12.2015; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2015), . BibTeX |
| 1683. | K. Rupp, A. Jüngel, T. Grasser: "A Performance Comparison of Algebraic Multigrid Preconditioners on GPUs and MIC"; Talk: Copper Mountain Conference on Multigrid Methods, Copper Mountain, CO, USA; 22.03.2015 - 27.03.2015; . BibTeX |
| 1682. | A. Kefayati, M. Pourfath, H. Kosina: "A Rigorous Study of Nanoscaled Transistors Based on Single-Layer MoS2"; Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 7 - 8. BibTeX |
| 1681. | T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "A Universal Nonvolatile Processing Environment"; Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 21.06.2015 - 26.06.2015; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), 62. BibTeX |
| 1680. | T. Grasser: "Advanced Modeling and Characterization of Bias Temperature Instabilities and Hot Carrier Degradation"; Talk: D2T Symposium, Tokyo, Japan; (invited) 21.08.2015. BibTeX |
| 1679. | T. Grasser: "Advanced Modeling and Characterization of Bias Temperature Instabilities and Hot Carrier Degradation"; Talk: Kyoto Institute of Technology, Kyoto, Japan; (invited) 24.08.2015. BibTeX |
| 1678. | L. Wang, T. Sadi, M. Nedjalkov, A. Brown, C. Alexander, B. Cheng, C. Millar, A. Asenov: "An Advanced Electro-Thermal Simulation Methodology For Nanoscale Device"; IEEE, in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-51523-5, doi:10.1109/IWCE.2015.7301989. BibTeX |
| 1677. | L. Wang, T. Sadi, M. Nedjalkov, A. Brown, C. Alexander, B. Cheng, C. Millar, A. Asenov: "An Advanced Electro-Thermal Simulation Methodology For Nanoscale Device"; Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 155 - 156. BibTeX |
| 1676. | M. Rovitto, W. H. Zisser, H. Ceric: "Analysis of Electromigration Void Nucleation Failure Time in Open Copper TSVs"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu, Taiwan; 29.06.2015 - 02.07.2015; in "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2015), . BibTeX |
| 1675. | Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser: "Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors"; Talk: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 27.09.2015 - 30.09.2015; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3, 650 - 651. BibTeX |
| 1674. | H. Kosina: "Blessing or curse: Dissipative quantum transport in nano-scale devices"; Talk: Workshop "From Atom to Transistor" at the 45th European Solid-State Device Research Conference (ESSDERC), Graz; (invited) 18.09.2015. BibTeX |
| 1673. | V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr: "CMOS-Compatible Spintronic Devices"; Talk: International Symposium on Microelectronics Technology and Devices (SBMicro), Salvador, Brazil; (invited) 01.09.2015 - 04.09.2015; in "Proceedings of the 30th Symposium on Microelectronics Technology and Devices (SBMicro)", (2015), ISBN: 978-1-4673-7162-9, 4 page(s) doi:10.1109/SBMicro.2015.7298103. BibTeX |
| 1672. | S. Selberherr: "CMOS-Compatible Spintronic Devices"; Talk: IEEE EDS Mini-Colloquium Distinguished Lecture, Universidade Salvador, Salvador, Brasil; (invited) 01.09.2015. BibTeX |
| 1671. | N. Neophytou, M. Thesberg, M. Pourfath, H. Kosina: "Calculations of the Thermopower in Materials with Nano-Inclusions Using Quantum Mechanical Simulations"; Talk: APS March Meeting, San Antonio, USA; 02.03.2015 - 06.03.2015; in "Bulletin of the American Physical Society (APS March Meeting)", (2015), 60/1, . BibTeX |
| 1670. | G. Rzepa, W. Gös, B. Kaczer, T. Grasser: "Characterization and Modeling of Reliability Issues in Nanoscale Devices"; Talk: IEEE International Symposium on Circuits and Systems (ISCAS), Lisbon, Portugal; (invited) 24.05.2015 - 27.05.2015; in "Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS) 2015", (2015), ISBN: 978-1-4799-8391-9, 2445 - 2448. BibTeX |
| 1669. | Yu. Illarionov, M. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov, T. Grasser: "Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-Thin Barrier Layers in Silicon Microelectronics"; Poster: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 27.09.2015 - 30.09.2015; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3, 330 - 331. BibTeX |
| 1668. | B. Ullmann, M. Waltl, T. Grasser: "Characterization of the Permanent Component of MOSFET Degradation Mechanisms"; Talk: Vienna Young Scientists Symposium - VSS 2015, Vienna University of Technology; 25.06.2015 - 26.06.2015; in "Proceedings of the 2015 Vienna Young Scient Symposium", (2015), ISBN: 978-3-9504017-0-7, 36 - 37. BibTeX |
| 1667. | A. Grill, G. Rzepa, P. Lagger, C. Ostermaier, H. Ceric, T. Grasser: "Charge Feedback Mechanisms at Forward Threshold Voltage Stress in GaN/AlGaN HEMTs"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 11.10.2015 - 15.10.2015; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2015), ISBN: 978-1-4673-7395-1, 41 - 45 doi:10.1109/IIRW.2015.7437064. BibTeX |
| 1666. | T. Grasser: "Charge Transfer of Single Holes in Nanoscale MOS Transistors: Linking DFT to Experiment"; Talk: CECAM-Workshop on Structural and Electronic Phenomena at Interfaces of Nanoscale Oxides, Lausanne, Switzerland; (invited) 08.04.2015 - 10.04.2015; . BibTeX |
| 1665. | H. Ceric, S. Selberherr: "Compact Model for Solder Bump Electromigration Failure"; Poster: International Interconnect Technology and Materials for Advanced Metallization Conference (IITC/MAM), Grenoble, France; 18.05.2015 - 21.05.2015; in "Proceedings of the International Interconnect Technology and Materials for Advanced Metallization Conference (IITC/MAM)", (2015), ISBN: 978-1-4673-7355-5, 159 - 161 doi:10.1109/IITC-MAM.2015.7325651. BibTeX |
| 1664. | P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 05.10.2015 - 09.10.2015; in "Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2015), 60. BibTeX |
| 1663. | J. Weinbub, P. Ellinghaus, M. Nedjalkov, S. Selberherr: "Comparison of Slab and Block Decomposition Strategies for the Two-Dimensional Wigner Monte Carlo Method"; Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 29.11.2015 - 04.12.2015; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2015), . BibTeX |
| 1662. | A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr: "Concept of a SOT-MRAM based on 1Transistor-1MTJ-Cell Structure"; Poster: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 27.09.2015 - 30.09.2015; in "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2015), ISBN: 978-4-86348-514-3, 140 - 141. BibTeX |
| 1661. | J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Dependence of Spin Lifetime on Spin Injection Orientation in Strained Silicon Films"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 26.01.2015 - 28.01.2015; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2015), ISBN: 978-1-4799-6910-4, 285 - 288 doi:10.1109/ULIS.2015.7063829. BibTeX |
| 1660. | S. Papaleo, W. H. Zisser, H. Ceric: "Effects of the Initial Stress at the Bottom of Open TSVs"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu, Taiwan; 29.06.2015 - 02.07.2015; in "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2015), . BibTeX |
| 1659. | A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr: "Efficient High-Frequency Spin-Torque Oscillators Composed of Two Three-Layer MgO-MTJs with a Common Free Layer"; Talk: Iberchip Workshop (IWS), Montevideo, Uruguay; (invited) 24.02.2015 - 27.02.2015; in "Proceedings of 21st Iberchip Worshop", (2015), 23, . BibTeX |
| 1658. | O. Baumgartner, L. Filipovic, H. Kosina, M. Karner, Z. Stanojevic, H. W. Cheng-Karner: "Efficient Modeling of Source/Drain Tunneling in Ultra-Scaled Transistors"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8, 202 - 205 doi:10.1109/SISPAD.2015.7292294. BibTeX |
| 1657. | A. Selinger, D. Ojdanic, K. Rupp, E. Langer: "Eigenvalue Computations on Graphics Processing Units"; Talk: Vienna Young Scientists Symposium - VSS 2015, Vienna University of Technology; 25.06.2015 - 26.06.2015; in "Proceedings of the 2015 Vienna Young Scientist Symposium", (2015), Gumpoldskirchen, Austria, ISBN: 978-3-9504017-0-7, 40 - 41. BibTeX |
| 1656. | M. Rovitto, W. H. Zisser, H. Ceric, T. Grasser: "Electromigration Modelling of Void Nucleation in Open Cu-TSVs"; Poster: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Budapest, Hungary; 19.04.2015 - 22.04.2015; in "Proceedings of the International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)", (2015), ISBN: 978-1-4799-9949-1, 5 page(s) doi:10.1109/EuroSimE.2015.7103100. BibTeX |
| 1655. | V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr: "Electron Spin Lifetime Enhancement by Shear Strain in Thin Silicon Films"; Talk: CMOS Emerging Technologies Research (CMOSETR), Vancouver, BC, Canada; (invited) 20.05.2015 - 22.05.2015; in "Book of Abstracts of the 2015 CMOS Emerging Technologies Research Symposium (CMOSETR)", (2015), ISBN: 978-1-927500-70-5, 58. BibTeX |
| 1654. | J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Evaluation of Spin Lifetime in Thin Silicon Films by Multilevel Parallelization"; Poster: nanoHUB User Conference, West Lafayette, Indiana, USA; 31.08.2015 - 01.09.2015; in "Proceedings of the nanoHUB User Conference", (2015), 1. BibTeX |
| 1653. | H. Demel, Z. Stanojevic, M. Karner, G. Rzepa, T. Grasser: "Expanding TCAD Simulations from Grid to Cloud"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 186 - 189 doi:10.1109/SISPAD.2015.7292290. BibTeX |
| 1652. | L. Gerrer, R. Hussin, S. Amoroso, J. Franco, P. Weckx, N. Simicic, N. Horiguchi, B. Kaczer, T. Grasser, A. Asenov: "Experimental Evidences and Simulations of Trap Generation along a Percolation Path"; Talk: European Solid-State Device Research Conference (ESSDERC), Graz; 14.09.2015 - 18.09.2015; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7133-9, 226 - 229 doi:10.1109/ESSDERC.2015.7324755. BibTeX |
| 1651. | M. Knepley, K. Rupp, A. Terrel: "FEM Integration with Quadrature on the GPU"; Talk: SIAM Conference on Computational Science and Engineering, Salt Lake City, Utah, USA; 14.03.2015 - 18.03.2015; . BibTeX |
| 1650. | S. Papaleo, W. H. Zisser, H. Ceric: "Factors that Influence Delamination at the Bottom of Open TSVs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 421 - 424 doi:10.1109/SISPAD.2015.7292350. BibTeX |
| 1649. | T. Grasser, M. Waltl, Y. Wimmer, W. Gös, R. Kosik, G. Rzepa, H. Reisinger, G. Pobegen, A.-M. El-Sayed, A. Shluger, B. Kaczer: "Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 07.12.2015 - 09.12.2015; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2015), 535 - 538 doi:10.1109/IEDM.2015.7409739. BibTeX |
| 1648. | F. Roger, A. P. Singulani, S. Carniello, L. Filipovic, S. Selberherr: "Global Statistical Methodology for the Analysis of Equipment Parameter Effects on TSV Formation"; Talk: International Workshop on CMOS Variability (VARI), Salvador, Brazil; 01.09.2015 - 04.09.2015; in "Proceedings of the 6th International Workshop on CMOS Variability (VARI)", (2015), ISBN: 978-1-5090-0071-5, 39 - 44 doi:10.1109/VARI.2015.7456561. BibTeX |
| 1647. | M. Karner, Z. Stanojevic, Ch. Kernstock, O. Baumgartner, H. W. Cheng-Karner: "Hierarchical TCAD Device Simulation of FinFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8, 258 - 261 doi:10.1109/SISPAD.2015.7292308. BibTeX |
| 1646. | Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser: "Hot-Carrier Degradation in Single-Layer Double-Gated Graphene Field-Effect Transistors"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 19.04.2015 - 23.04.2015; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), XT.2.1 - XT.2.6 doi:10.1109/IRPS.2015.7112834. BibTeX |
| 1645. | Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser: "Impact of Hot Carrier Stress on the Defect Density and Mobility in Double-Gated Graphene Field-Effect Transistors"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 26.01.2015 - 28.01.2015; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2015), ISBN: 978-1-4799-6910-4, 81 - 84 doi:10.1109/ULIS.2015.7063778. BibTeX |
| 1644. | H. Ceric, M. Rovitto: "Impact of Microstructure and Current Crowding on Electromigration: A TCAD Study"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 194 - 197 doi:10.1109/SISPAD.2015.7292292. BibTeX |
| 1643. | P. Ellinghaus, M. Nedjalkov, S. Selberherr: "Improved Drive-Current into Nanoscaled Channels using Electrostatic Lenses"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 24 - 27 doi:10.1109/SISPAD.2015.7292249. BibTeX |
| 1642. | P. Ellinghaus, M. Nedjalkov, S. Selberherr: "Improved Particle Annihilation for Wigner Monte Carlo Simulations on a High-Resolution Mesh"; Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 93 - 94. BibTeX |
| 1641. | T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Improving the Performance of a Non-Volatile Magnetic Flip Flop by Exploiting the Spin Hall Effect"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 446 - 449 doi:10.1109/SISPAD.2015.7292357. BibTeX |
| 1640. | J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Increase of Surface Roughness and Phonon Scattering Mediated Spin Lifetime in Thin Strained SOI Film"; Talk: European Materials Research Society (EMRS), Warsaw, Poland; 15.09.2015 - 18.09.2015; in "Book of Abstracts of the 2015 E-MRS Fall Meeting", (2015), 1 page(s) . BibTeX |
| 1639. | J. Ghosh, V. Sverdlov, S. Selberherr: "Increment of Spin Lifetime by Spin Injection Orientation in Stressed Thin SOI Films"; Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Basel, Switzerland; 10.08.2015 - 13.08.2015; in "Program and Abstract Book of the 8th International School & Conference on Spintronics and Quantum Information Technology", (2015), 130. BibTeX |
| 1638. | J. Ghosh, V. Sverdlov, S. Selberherr: "Influence of Valley Splitting on Spin Relaxation Time in a Strained Thin Silicon Film"; Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-51523-5, 4 page(s) doi:10.1109/IWCE.2015.7301961. BibTeX |
| 1637. | J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Injection Direction Sensitive Spin Lifetime Model in a Strained Thin Silicon Film"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 277 - 280 doi:10.1109/SISPAD.2015.7292313. BibTeX |
| 1636. | Yu. Illarionov, M. Waltl, S. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser: "Interplay between Hot Carrier and Bias Stress Components in Single-Layer Double-Gated Graphene Field-Effect Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; 14.09.2015 - 18.09.2015; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7133-9, 172 - 175 doi:10.1109/ESSDERC.2015.7324741. BibTeX |
| 1635. | J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures"; Talk: International Conference on Insulating Films on Semiconductors (INFOS), Udine, Italy; 29.06.2015 - 02.07.2015; in "Book of Abstracts 19th Conference on Insulating Films on Semiconductors", (2015), ISBN: 978-88-9030-695-2, 235 - 236. BibTeX |
| 1634. | L. Filipovic, A. P. Singulani, F. Roger, S. Carniello, S. Selberherr: "Intrinsic Stress Analysis of Tungsten-Lined Open TSVs"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 05.10.2015 - 09.10.2015; in "Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2015), 71. BibTeX |
| 1633. | L. Filipovic, S. Selberherr: "Kinetics of Droplet Motion During Spray Pyrolysis"; Talk: Energy-Materials-Nanotechnology Meeting on Droplets (EMN), Phuket, Thailand; (invited) 08.05.2015 - 11.05.2015; in "Abstracts of the Energy-Materials-Nanotechnology Meeting on Droplets (EMN)", (2015), 127 - 128. BibTeX |
| 1632. | Ch. Kernstock, Z. Stanojevic, O. Baumgartner, M. Karner: "Layout-Based TCAD Device Model Generation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8, 198 - 201 doi:10.1109/SISPAD.2015.7292293. BibTeX |
| 1631. | P. Ellinghaus, M. Nedjalkov, S. Selberherr: "Memory-efficient Particle Annihilation Algorithm for Wigner Monte Carlo Simulations"; Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-51523-5, 4 page(s) doi:10.1109/IWCE.2015.7301955. BibTeX |
| 1630. | F. Rudolf, J. Weinbub, K. Rupp, P. Resutik, S. Selberherr: "Mesh Healing for TCAD Simulations"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 66. BibTeX |
| 1629. | G. Rzepa, M. Waltl, W. Gös, B. Kaczer, T. Grasser: "Microscopic Oxide Defects Causing BTI, RTN, and SILC on High-K FinFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 144 - 147 doi:10.1109/SISPAD.2015.7292279. BibTeX |
| 1628. | P. Sharma, M. Jech, S. E. Tyaginov, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, T. Grasser: "Modeling of Hot-Carrier Degradation in LDMOS Devices Using a Drift-Diffusion Based Approach"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 60 - 63 doi:10.1109/SISPAD.2015.7292258. BibTeX |
| 1627. | J. Franco, B. Kaczer, P. Roussel, E. Bury, H. Mertens, R. Ritzenthaler, T. Grasser, N. Horiguchi, A. Thean, G Groeseneken: "NBTI in Si 0.55 Ge 0.45 Cladding p-FinFETs: Porting the Superior Reliability from Planar to 3D Architectures"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 19.04.2015 - 23.04.2015; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), 2F.4.1 - 2F.4.5 doi:10.1109/IRPS.2015.7112694. BibTeX |
| 1626. | T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Novel Buffered Magnetic Logic Gate Grid"; Poster: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 24.05.2015 - 28.05.2015; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), 67, ISSN: 1938-6737, 2 page(s) . BibTeX |
| 1625. | T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Novel Spintronic Devices for Embedded Spin-Based Memories and Non-Volatile Computing"; Talk: Energy-Materials-Nanotechnology Fall Meeting (EMN), Las Vegas, USA; (invited) 16.11.2015 - 19.11.2015; in "Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN)", (2015), 15 - 16. BibTeX |
| 1624. | K. Rupp, S. Balay, J. Brown, M. Knepley, L. McInnes, B. Smith: "On The Evolution Of User Support Topics in Computational Science and Engineering Software"; Poster: Computational Science & Engineering Software Sustainability and Productivity Challenges (CSESSP Challenges), Rockville, MD, USA; 15.10.2015 - 16.10.2015; in "Computational Science and Engineering Software Sustainability and Productivity Challenges (CSESSP) Workshop", (2015), 1 - 2. BibTeX |
| 1623. | R. Stradiotto, G. Pobegen, C. Ostermaier, T. Grasser: "On The Fly Characterization of Charge Trapping Phenomena at GaN/Dielectric and GaN/AlGaN/Dielectric Interfaces Using Impedance Measurements"; Talk: European Solid-State Device Research Conference (ESSDERC), Graz; 14.09.2015 - 18.09.2015; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7860-4, 218 - 225 doi:10.1109/ESSDERC.2015.7324754. BibTeX |
| 1622. | S. E. Tyaginov, M. Jech, P. Sharma, J. Franco, B. Kaczer, T. Grasser: "On the Temperature Behavior of Hot-Carrier Degradation"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 11.10.2015 - 15.10.2015; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2015), 143 - 146 doi:10.1109/IIRW.2015.7437088. BibTeX |
| 1621. | Y. Wimmer, W. Gös, A.-M. El-Sayed, A. Shluger, T. Grasser: "On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects"; Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 97 - 98. BibTeX |
| 1620. | T. Grasser, M. Waltl, W. Gös, Y. Wimmer, A. El-Sayed, A. Shluger, B. Kaczer: "On the Volatility of Oxide Defects: Activation, Deactivation, and Transformation"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 19.04.2015 - 23.04.2015; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), 5A.3.1 - 5A.3.8 doi:10.1109/IRPS.2015.7112739. BibTeX |
| 1619. | M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina: "Optimization of Energy Filtering for Power Factor Improvements Through Fully Quantum Mechanical Transport Simulations"; Talk: International Conference on Thermoelectrics & European Conference on Thermoelectrics (ICT&ECT), Dresden, Germany; 28.06.2015 - 02.07.2015; in "Proceedings of the 34th Annual International Conference on Thermoelectrics and the 13th European Conference on Thermoelectrics (ICT&ECT)", (2015), 1 page(s) . BibTeX |
| 1618. | M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina: "Optimization of Thermoelectric Properties in Cross-Plane Superlattices - A 1D NEGF Study"; Talk: APS March Meeting, San Antonio, USA; 02.03.2015 - 06.03.2015; in "Bulletin of the American Physical Society (APS March Meeting)", (2015), 60/1, . BibTeX |
| 1617. | B. Kaczer, J. Franco, M. Cho, T. Grasser, P. Roussel, S. E. Tyaginov, M. Bina, Y. Wimmer, L. M. Procel, L. Trojman, F. Crupi, G. Pitner, V. Putcha, P. Weckx, E. Bury, Z. Ji, A. De Keersgieter, T. Chiarella, N. Horiguchi, G Groeseneken, A. Thean: "Origins and Implications of Increased Channel Hot Carrier Variability in nFinFETs"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 19.04.2015 - 23.04.2015; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), 6 page(s) doi:10.1109/IRPS.2015.7112706. BibTeX |
| 1616. | T. Grasser: "Oxide Defects in MOS Transistors: Characterization and Modeling"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Kinsale, Ireland; (invited) 09.06.2015 - 11.06.2015; . BibTeX |
| 1615. | T. Grasser: "Oxide Defects in MOS Transistors: Characterization and Modeling"; Talk: IEEE EDS Distinguished Lecture, Aranjuez, Spain; (invited) 11.02.2015. BibTeX |
| 1614. | K. Rupp: "PETSc on GPUs and MIC: Current Status and Future Directions"; Talk: Workshop: Celebrating 20 Years of Computational Science with PETSc Tutorial and Conference, Argonne National Laboratory, IL, USA; 15.06.2015 - 18.06.2015; . BibTeX |
| 1613. | J. Weinbub, P. Ellinghaus, S. Selberherr: "Parallelization of the Two-Dimensional Wigner Monte Carlo Method"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 73. BibTeX |
| 1612. | J. Cervenka, P. Ellinghaus: "Preconditioned Deterministic Solver for the Wigner Equation"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 31. BibTeX |
| 1611. | P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices"; Talk: IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China; 10.05.2015 - 14.05.2015; in "Proceedings of the IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)", (2015), ISBN: 978-1-4799-6259-4, 389 - 392 doi:10.1109/ISPSD.2015.7123471. BibTeX |
| 1610. | L. Filipovic, S. Selberherr: "Processing of Integrated Gas Sensor Devices"; Talk: IEEE International Technical Conference of IEEE Region 10 (TENCON), Macau, China; (invited) 01.11.2015 - 04.11.2015; in "Proceedings of the IEEE International Technical Conference of IEEE Region 10 (TENCON)", (2015), ISBN: 978-1-4799-8639-2, 6 page(s) doi:10.1109/TENCON.2015.7372781. BibTeX |
| 1609. | A. Harrer, P. Reininger, R. Gansch, B. Schwarz, D. MacFarland, T. Zederbauer, H. Detz, A. M. Andrews, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser: "Quantum Cascade Detectors for Sensing Applications"; Talk: ICAVS8, Wien; 12.07.2015 - 17.07.2015; . BibTeX |
| 1608. | T. Grasser: "Recent Progress in Understanding the Bias Temperature Instability: from Single Traps to Distributions"; Talk: IEEE EDS Distinguished Lecture, Hiroshima, Japan; (invited) 26.08.2015. BibTeX |
| 1607. | A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr: "SOT-MRAM based on 1Transistor-1MTJ-Cell Structure"; IEEE, in "Proceedings of the Non-Volatile Memory Technology Symposium (NVMTS)", (2015), 50 - 53 doi:10.1109/NVMTS.2015.7457479. BibTeX |
| 1606. | A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr: "SOT-MRAM based on 1Transistor-1MTJ-Cell Structure"; Poster: Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China; 12.10.2015 - 14.10.2015; in "Technical Digest of the Non-Volatile Memory Technology Symposium (NVMTS)", (2015), 105 - 106. BibTeX |
| 1605. | K. Rupp: "Scaling Deterministic Solution of the Boltzmann Transport Equation on Heterogeneous Computing Platforms"; Talk: Scalable Methods for Kinetic Equations, Oak Ridge, TN, USA; (invited) 19.10.2015 - 23.10.2015; in "Scalable Methods for Kinetic Equations - Presentation Titles and Abstracts", (2015), 17. BibTeX |
| 1604. | J. Weinbub, F. Dang, T. Gillberg, S. Selberherr: "Shared-Memory Parallelization of the Semi-Ordered Fast Iterative Method"; Talk: High Performance Computing Symposium (HPC), Alexandria, VA, USA; 12.04.2015 - 15.04.2015; in "Book of Abstracts of the Spring Simulation Multiconference (SpringSim), High Performance Computing Symposium (HPC)", (2015), ISBN: 1-56555-355-1, 74. BibTeX |
| 1603. | J. Weinbub, F. Dang, T. Gillberg, S. Selberherr: "Shared-Memory Parallelization of the Semi-Ordered Fast Iterative Method"; ACM, in "Proceedings of the High Performance Computing Symposium (HPC)", (2015), ISBN: 978-1-5108-0101-1, 217 - 224 doi:10.5555/2872599.2872626. BibTeX |
| 1602. | V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr: "Silicon Spintronics"; NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting", Lviv, Ukrain; (invited) 13.04.2015 - 16.04.2015; in "Conference Abstracts, NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting"", (2015), ISBN: 978-966-02-7553-9, 44 - 45. BibTeX |
| 1601. | V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr: "Silicon Spintronics: Recent Advances and Challenges"; International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT), Samara, Russia; (invited) 29.06.2015 - 30.06.2015; in "Proceedings of the 2015 International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT)", (2015), ISBN: 978-5-93424-739-4, 6 - 7. BibTeX |
| 1600. | V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr: "Silicon and CMOS-Compatible Spintronics"; Talk: International Conference on Applied Physics, Simulation and Computers (APSAC), Vienna, Austria; (invited) 15.03.2015 - 17.03.2015; in "Proceedings of the International Conference on Applied Physics, Simulation and Computers (APSAC 2015)", (2015), 28, ISBN: 978-1-61804-286-6, 17 - 20. BibTeX |
| 1599. | J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Spin Lifetime Dependence on Spin Injection Orientation in Strained Silicon Films"; Talk: APS March Meeting, San Antonio, USA; 02.03.2015 - 06.03.2015; in "Bulletin of the American Physical Society (APS March Meeting)", (2015), 60/1, . BibTeX |
| 1598. | J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films"; Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 35 - 36. BibTeX |
| 1597. | D. Osintsev, J. Ghosh, V. Sverdlov, J. Weinbub, S. Selberherr: "Spin Lifetime in MOSFETs: A High Performance Computing Approach"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 60 - 61. BibTeX |
| 1596. | V. Sverdlov, S. Selberherr: "Spin-Based CMOS-Compatible Devices"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; (invited) 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 69. BibTeX |
| 1595. | V. Sverdlov, S. Selberherr: "Spin-Based Devices for Future Microelectronics"; Talk: International Symposium on Next-Generation Electronics (ISNE), Taipei, Taiwan; (invited) 04.05.2015 - 06.05.2015; in "Proceedings of The 4th International Symposium on Next-Generation Electronics (ISNE 2015)", (2015), 4 page(s) doi:10.1109/ISNE.2015.7132030. BibTeX |
| 1594. | V. Sverdlov, S. Selberherr: "Spin-Based Silicon and CMOS-Compatible Devices"; Talk: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; (invited) 24.05.2015 - 28.05.2015; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), 67, ISSN: 1938-6737, 2 page(s) . BibTeX |
| 1593. | V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr: "Spin-Driven Applications of Silicon and CMOS-Compatible Devices"; Talk: BIT's Annual World Congress of Nano Science & Technology, Xi'an, China; (invited) 24.09.2015 - 26.09.2015; in "Abstracts of the BIT's 5th Annual Congress of Nano Science & Technology-2015", (2015), 175. BibTeX |
| 1592. | V. Sverdlov, S. Selberherr: "Spin-dependent Trap-assisted Tunneling Including Spin Relaxation at Room Temperature"; Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Basel, Switzerland; 10.08.2015 - 13.08.2015; in "Program and Abstract Book of the 8th International School & Conference on Spintronics and Quantum Information Technology", (2015), 114. BibTeX |
| 1591. | V. Sverdlov, S. Selberherr: "Spin-dependent Trap-assisted Tunneling in Ferromagnet-Oxide-Semiconductor Structures"; Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 29.11.2015 - 04.12.2015; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2015), . BibTeX |
| 1590. | M. Hosseini, M. Elahi, M. Pourfath, D. Esseni: "Strain Engineering of Single-Layer MoS2"; Talk: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; 14.09.2015 - 18.09.2015; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7133-9, 314 - 317 doi:10.1109/ESSDERC.2015.7324777. BibTeX |
| 1589. | V. Sverdlov, D. Osintsev, J. Ghosh, S. Selberherr: "Strained Silicon-on-Insulator for Spintronic Applications: Giant Spin Lifetime Enhancement"; Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 21.06.2015 - 26.06.2015; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), 63. BibTeX |
| 1588. | L. Filipovic, S. Selberherr: "Stress Considerations in Thin Films for CMOS-Integrated Gas Sensors"; Talk: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 24.05.2015 - 28.05.2015; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), 67, ISSN: 1938-6737, 2 page(s) . BibTeX |
| 1587. | L. Filipovic, S. Selberherr: "Stress in Three-Dimensionally Integrated Sensor Systems"; Talk: International Conference on Materials for Advanced Technologies(ICMAT), Singapore; (invited) 28.06.2015 - 03.07.2015; in "Abstracts of the 2015 International Conference on Materials for Advanced Technologies (ICMAT)", (2015), 342. BibTeX |
| 1586. | F. Rudolf, J. Weinbub, K. Rupp, A. Morhammer, S. Selberherr: "Symmetry-Aware 3D Volumetric Mesh Generation - An Analysis of Performance and Element Quality"; Talk: International Meshing Roundtable (IMR), Austin, Texas, USA; 11.10.2015 - 14.10.2015; in "Proceedings of the 24th International Meshing Roundtable (IMR24)", (2015), 5 page(s) . BibTeX |
| 1585. | Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser: "Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect Transistors"; Talk: Graphene 2015, Bilbao, Spain; 10.03.2015 - 13.03.2015; in "Abstracts Graphene 2015", (2015), 1 page(s) . BibTeX |
| 1584. | M. Nedjalkov, P. Ellinghaus, S. Selberherr: "The Aharanov-Bohm Effect from a Phase Space Perspective"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 59 - 60. BibTeX |
| 1583. | B. Kaczer, J. Franco, P. Weckx, P. Roussel, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, H. Kukner, P. Raghavan, F. Catthoor, G. Rzepa, W. Gös, T. Grasser: "The Defect-Centric Perspective of Device and Circuit Reliability - From Individual Defects to Circuits"; Talk: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; (invited) 14.09.2015 - 18.09.2015; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7860-4, 218 - 225 doi:10.1109/ESSDERC.2015.7324754. BibTeX |
| 1582. | S. Selberherr: "The Evolution and Potential Future of Microelectronics"; Talk: IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil; (invited) 28.08.2015. BibTeX |
| 1581. | S. Selberherr: "The Evolution and Potential Future of Microelectronics"; Talk: IEEE EDS Distinguished Lecture, City University of Hong Kong, Hong Kong; (invited) 31.03.2015. BibTeX |
| 1580. | P. Ellinghaus, M. Nedjalkov, S. Selberherr: "The Influence of Electrostatic Lenses on Wave Packet Dynamics"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 39 - 40. BibTeX |
| 1579. | S. Nazemi, E. Soleimani, M. Pourfath, H. Kosina: "The Role of Surface Termination Geometry on the Ground-State and Optical Properties of Silicon Nano-Crystals: A Density Functional Theory Study"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8, 333 - 336. BibTeX |
| 1578. | C. Ostermaier, P. Lagger, G. Prechtl, A. Grill, T. Grasser, D. Pogany: "The role of electron transport in the charge trapping at the III-N/dielectric interface in AlGaN/GaN MIS-HEMT structures"; Talk: Semiconductor Interface Specialists Conference, Arlington, VA, USA; 02.12.2015 - 05.12.2015; . BibTeX |
| 1577. | M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina: "Thermoelectric Efficiency Improvements through Grain Shape Optimization: A Non-Equilibrium Green´s Function Study"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 70. BibTeX |
| 1576. | M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina: "Thermoelectric Power Factor Optimization in Nanocomposites by Energy Filtering Using NEGF"; Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 4 page(s) . BibTeX |
| 1575. | J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films"; Talk: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 24.05.2015 - 28.05.2015; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), 67, ISSN: 1938-6737, 2 page(s) . BibTeX |
| 1574. | K. Rupp, Ph. Tillet, T. St Clere Smithe, N. Karovic, J. Weinbub, F. Rudolf: "ViennaCL - Fast Linear Algebra for Multi and Many-Core Architectures"; Poster: SIAM Conference on Computational Science and Engineering, Salt Lake City, Utah, USA; 14.03.2015 - 18.03.2015; . BibTeX |
| 1573. | K. Rupp, M. Bina, A. Morhammer, T. Grasser, A. Jüngel: "ViennaSHE: A Semiconductor Device Simulator Based on the Spherical Harmonics Expansion Method"; Talk: Workshop on Applied Mathematics and Simulation for Semiconductors (AMaSIS), Berlin, Germany; (invited) 11.03.2015 - 13.03.2015; . BibTeX |
| 1572. | P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr: "ViennaWD - Applications"; Talk: International Wigner Workshop (IW2), Waikoloa, Hawaii, USA; 29.11.2015 in "Booklet of the International Wigner Workshop (IW2)", (2015), 9. BibTeX |
| 1571. | J. Weinbub, P. Ellinghaus, M. Nedjalkov, S. Selberherr: "ViennaWD - Status and Outlook"; Talk: International Wigner Workshop (IW2), Waikoloa, Hawaii, USA; 29.11.2015 in "Booklet of the International Wigner Workshop (IW2)", (2015), 8. BibTeX |
| 1570. | L. Wang, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov: "3D Coupled Electro-Thermal FinFET Simulations Including the Fin Shape Dependence of the Thermal Conductivity"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 269 - 272 doi:10.1109/SISPAD.2014.6931615. BibTeX |
| 1569. | L. Filipovic, Z. Stanojevic, O. Baumgartner, H. Kosina: "3D Modeling of Direct Band-to-Band Tunneling in Nanowire TFETs"; Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2. BibTeX |
| 1568. | H. Ceric, R. Orio, A. P. Singulani, S. Selberherr: "3D Technology Interconnect Reliability TCAD"; Talk: Pan Pacific Microelectronics Symposium, Big Island of Hawaii, USA; 11.02.2014 - 13.02.2014; in "Proceedings of the 2014 Pan Pacific Microelectronics Symposium", (2014), ISBN: 978-0-9888873-3-6, 1 - 8. BibTeX |
| 1567. | J. Weinbub, K. Rupp, F. Rudolf: "A Flexible Material Database for Computational Science and Engineering"; Talk: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 15.06.2014 - 20.06.2014; in "Proc. 4th European Seminar on Computing", (2014), 226. BibTeX |
| 1566. | M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina: "A Numerical Study of Line-Edge Roughness in Graphene Superlattice-Based Photodetectors"; Talk: International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Palma de Mallorca, Spain; 01.09.2014 - 04.09.2014; in "Proceedings of the 14th International Conference on Numerical Simulation of Optoelectronic Devices", (2014), 1 - 2. BibTeX |
| 1565. | S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser: "A Predictive Physical Model for Hot-Carrier Degradation in Ultra-Scaled MOSFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 89 - 92 doi:10.1109/SISPAD.2014.6931570. BibTeX |
| 1564. | Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, H. Reisinger, B. Kaczer, T. Grasser: "A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-scaled MOSFETs"; Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, XT13.1 - XT13.6. BibTeX |
| 1563. | M. Waltl, W. Gös, K. Rott, H. Reisinger, T. Grasser: "A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS Case"; Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, XT18.1 - XT18.5. BibTeX |
| 1562. | T. Grasser, K. Rott, H. Reisinger, M. Waltl, J. Franco, B. Kaczer: "A unified perspective of RTN and BTI"; Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, 4A.5.1 - 4A.5.7. BibTeX |
| 1561. | L. Filipovic, S. Selberherr: "About Processes and Performance of Integrated Gas Sensor Components"; Talk: Energy-Materials-Nanotechnology Fall Meeting (EMN), Orlando, USA; (invited) 22.11.2014 - 25.11.2014; in "Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN)", (2014), 96 - 97. BibTeX |
| 1560. | S. Selberherr: "About Voids in Copper Interconnects"; Talk: IEEE EDS Distinguished Lecture, Zhejiang University, Hangzhou, China; (invited) 28.10.2014. BibTeX |
| 1559. | K. Rupp, Ph. Tillet, A. Jungel, T. Grasser: "Achieving Portable High Performance for Iterative Solvers on Accelerators"; Talk: Annual Meeting of the International Association of Applied Mathematics and Mechanics (GAMM), Erlangen, Germany; 10.03.2014 - 14.03.2014; in "Book of Abstracts", (2014), 815. BibTeX |
| 1558. | W. Gös, M. Waltl, Y. Wimmer, G. Rzepa, T. Grasser: "Advanced Modeling of Charge Trapping: RTN, 1/f noise, SILC, and BTI"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; (invited) 09.09.2014 - 11.09.2014; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 77 - 80 doi:10.1109/SISPAD.2014.6931567. BibTeX |
| 1557. | Z. Stanojevic, O. Baumgartner, M. Karner, L. Filipovic, C. Kernstock, H. Kosina: "Advanced Numerical Methods for Semi-Classical Transport Simulation in Ultra-Narrow Channels"; Talk: European Conference on Mathematics for Industry (ECMI), Taormina, Italy; (invited) 09.06.2014 - 14.06.2014; in "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), 1. BibTeX |
| 1556. | A. Harrer, P. Reininger, B. Schwarz, R. Gansch, S. Kalchmair, H. Detz, T. Zederbauer, D. MacFarland, A. M. Andrews, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser: "Advances in Quantum Cascade Detector Design"; Talk: 4th International Nanophotonics Meeting 2014, Igls; 23.10.2014 - 25.10.2014; . BibTeX |
| 1555. | M. Moradinasab, M. Pourfath, H. Kosina: "An Instability Study in Terahertz Quantum Cascade Lasers"; Talk: Int. Conf. on Superlattices, Nanostructures and Nanodevices (ICSNN), Savannah, GA, USA; 03.08.2014 - 08.08.2014; in "Proc.Intl.Conf.on Superlattices, Nanostructures and Nanodevices (ICSNN)", (2014), 10. BibTeX |
| 1554. | K. Rupp, F. Rudolf, J. Weinbub, A. Jungel, T. Grasser: "Automatic Finite Volume Discretizations Through Symbolic Computations"; Talk: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 15.06.2014 - 20.06.2014; in "Proc. 4th European Seminar on Computing", (2014), 192. BibTeX |
| 1553. | L. Filipovic, O. Baumgartner, Z. Stanojevic, H. Kosina: "BTB Tunneling in InAs/Si Heterojunctions"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 245 - 248 doi:10.1109/SISPAD.2014.6931609. BibTeX |
| 1552. | L. Filipovic, O. Baumgartner, Z. Stanojevic, H. Kosina: "Band-to-Band Tunneling in 3D Devices"; Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 13 - 14. BibTeX |
| 1551. | T. Grasser: "Bias Temperature Instability in CMOS Nanodevices"; Talk: SINANO Summer School, Bertinoro, Italy; (invited) 25.08.2014 - 29.08.2014; . BibTeX |
| 1550. | Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser: "Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: A Reliability Challenge"; Talk: Silicon Nanoelectronics Workshop, Honolulu, Hawaii, USA; 08.06.2014 - 09.06.2014; in "2014 IEEE Silicon Nanoelectronics Workshop", (2014), ISBN: 978-1-4799-5677-7, 29 - 30. BibTeX |
| 1549. | K. Rupp, M. Bina, Y. Wimmer, A. Jungel, T. Grasser: "Cell-Centered Finite Volume Schemes for Semiconductor Device Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 365 - 368 doi:10.1109/SISPAD.2014.6931639. BibTeX |
| 1548. | T. Grasser: "Characterization and Modeling of Charge Trapping and Hot Carrier Degradation"; Talk: IEEE EDS Distinguished Lecture, Agrate Brianza, Italy; (invited) 11.12.2014. BibTeX |
| 1547. | T. Grasser: "Characterization and Modeling of Charge Trapping in CMOS Transistors"; Talk: International Workshop on Characterization and Modeling of Memory Devices, Agrate Brianza, Italy; (invited) 02.10.2014 - 03.10.2014; . BibTeX |
| 1546. | T. Grasser, G. Rzepa, M. Waltl, W. Gös, K. Rott, G.A. Rott, H. Reisinger, J. Franco, B. Kaczer: "Characterization and Modeling of Charge Trapping: From Single Defects to Devices"; Talk: IEEE International Conference on IC Design and Technology (ICICDT), Austin, TX, USA; (invited) 28.05.2014 - 30.05.2014; in "Proceedings of IEEE International Conference on IC Design and Technology", (2014), ISBN: 978-1-4799-2153-9, 1 - 4 doi:10.1109/ICICDT.2014.6838620. BibTeX |
| 1545. | H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Compact Modeling of Memristive IMP Gates for Reliable Stateful Logic Design"; Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland; 19.06.2014 - 21.06.2014; in "Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems", (2014), 26. BibTeX |
| 1544. | A. Makarov, V. Sverdlov, S. Selberherr: "Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators"; G. Lee (ed); WITPRESS, 1, in "Future Information Engineering", (2014), ISBN: 978-1-84564-855-8, 391 - 398 doi:10.2495/ICIE130451. BibTeX |
| 1543. | Z. Stanojevic, O. Baumgartner, L. Filipovic, H. Kosina: "Comprehensive Low-Field Mobility Modeling in Nano-Scaled SOI Channels"; Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2. BibTeX |
| 1542. | E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, R. Minixhofer, L. Filipovic, R. Orio, S. Selberherr: "Coupled Simulation to Determine Across Wafer Variations for Electrical and Reliability Parameters of Through-Silicon VIAs"; Talk: European Workshop on Materials for Advanced Metallization (MAM), Chemnitz, Germany; 02.03.2014 - 05.03.2014; in "Book of Abstracts", (2014), 2 page(s) . BibTeX |
| 1541. | J. Cervenka, P. Ellinghaus, M. Nedjalkov: "Deterministic Solution of the Discrete Wigner Equation"; Talk: International Conference on Numerical Methods and Applications, Borovets, Bulgaria; 20.08.2014 - 24.08.2014; in "Eighth International Conference on Numerical Methods and Applications", (2014), 36. BibTeX |
| 1540. | S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, B. Kaczer, H. Ceric, T. Grasser: "Dominant Mechanism of Hot-Carrier Degradation in Short- and Long-Channel Transistors"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 12.10.2014 - 16.10.2014; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 63 - 68 doi:10.1109/IIRW.2014.7049512. BibTeX |
| 1539. | L. Filipovic, R. Orio, S. Selberherr, A. P. Singulani, F. Roger, R. Minixhofer: "Effects of Sidewall Scallops on Open Tungsten TSVs"; Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, 3E.3.1 - 3E.3.6 doi:10.1109/IRPS.2014.6860633. BibTeX |
| 1538. | L. Filipovic, R. Orio, S. Selberherr: "Effects of Sidewall Scallops on the Performance and Reliability of Filled Copper and Open Tungsten TSVs"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2, 321 - 326 doi:10.1109/IPFA.2014.6898137. BibTeX |
| 1537. | P. Ellinghaus, M. Nedjalkov, S. Selberherr: "Efficient Calculation of the Two-Dimensional Wigner Potential"; Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 19 - 20. BibTeX |
| 1536. | H. Ceric, S. Selberherr: "Electromigration Induced Failure of Solder Bumps and the Role of IMC"; Poster: IEEE International Interconnect Technology Conference (IITC), San Jose, USA; 20.05.2014 - 23.05.2014; in "Proceedings of the International Interconnect Technology Conference (IITC)", (2014), ISBN: 978-1-4799-5017-1, 265 - 267 doi:10.1109/IITC.2014.6831891. BibTeX |
| 1535. | W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr: "Electromigration Induced Resistance Increase in Open TSVs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 249 - 252 doi:10.1109/SISPAD.2014.6931610. BibTeX |
| 1534. | W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr: "Electromigration Reliability of Open TSV Structures"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 29.09.2014 - 02.10.2014; in "Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), 48. BibTeX |
| 1533. | W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr: "Electromigration Reliability of Open TSV Structures"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2, 317 - 320 doi:10.1109/IPFA.2014.6898179. BibTeX |
| 1532. | H. Ceric, S. Selberherr: "Electromigration Reliability of Solder Bumps"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2, 336 - 339 doi:10.1109/IPFA.2014.6898145. BibTeX |
| 1531. | H. Ceric, W. H. Zisser, M. Rovitto, S. Selberherr: "Electromigration in Solder Bumps: A Mean-Time-to-Failure TCAD Study"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 221 - 224 doi:10.1109/SISPAD.2014.6931603. BibTeX |
| 1530. | V. Sverdlov, D. Osintsev, S. Selberherr: "Electron Momentum and Spin Relaxation in Silicon Films: A Rigorous k p-based Approach"; Talk: European Conference on Mathematics for Industry (ECMI), Taormina, Italy; (invited) 09.06.2014 - 14.06.2014; in "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), 454 - 456. BibTeX |
| 1529. | T. Grasser, K. Rott, H. Reisinger, M. Waltl, W. Gös: "Evidence for Defect Pairs in SiON pMOSFETs"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3929-9, 228 - 263. BibTeX |
| 1528. | Z. Stanojevic, L. Filipovic, O. Baumgartner, H. Kosina: "Fast Methods for Full-Band Mobility Calculation"; Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 51 - 52. BibTeX |
| 1527. | N. Neophytou, H. Kosina: "Field Effect Density Modulation in Nanowires for Large Thermoelectric Power Factors: A Self-Consistent Atomistic Simulation Approach"; Talk: International Conference on Thermoelectrics, Nashville, USA; 06.07.2014 - 10.07.2014; in "Book of Abstracts", (2014), 1 page(s) . BibTeX |
| 1526. | T. Windbacher, D. Osintsev, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr: "Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator"; Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 193 - 194. BibTeX |
| 1525. | V. Sverdlov, D. Osintsev, S. Selberherr: "From Strained SOI MOSFET to Spin MOSFET with Strain: a Modeling Approach"; Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; (invited) 27.01.2014 - 29.01.2014; . BibTeX |
| 1524. | Z. Stanojevic, O. Baumgartner, M. Karner, L. Filipovic, C. Kernstock, H. Kosina: "Full-Band Modeling of Mobility in p-Type FinFETs"; Poster: Silicon Nanoelectronics Workshop, Honolulu, Hawaii, USA; 08.06.2014 - 09.06.2014; in "2014 IEEE Silicon Nanoelectronics Workshop", (2014), ISBN: 978-1-4799-5676-0, 83 - 84. BibTeX |
| 1523. | N. Neophytou, H. Karamitaheri, H. Kosina: "Full-Band Simulations of Thermoelectric Properties of Si Nanowires and Thin Layers"; Talk: European Conference on Mathematics for Industry (ECMI), Taormina, Italy; (invited) 09.06.2014 - 14.06.2014; in "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), 1. BibTeX |
| 1522. | Z. Stanojevic, L. Filipovic, O. Baumgartner, M. Karner, C. Kernstock, H. Kosina: "Full-Band Transport in Ultra-Narrow p-Type Si Channels: Field, Orientation, Strain"; Poster: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 07.04.2014 - 09.04.2014; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), 4 page(s) . BibTeX |
| 1521. | H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "High Performance MRAM-Based Stateful Logic"; Poster: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 07.04.2014 - 09.04.2014; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9, 117 - 120 doi:10.1109/ULIS.2014.6813912. BibTeX |
| 1520. | P. Ellinghaus, M. Nedjalkov, S. Selberherr: "Implications of the Coherence Length on the Discrete Wigner Potential"; Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 155 - 156. BibTeX |
| 1519. | M. Moradinasab, M. Pourfath, H. Kosina: "Improved Active Region Designs for Mode Locking in Quantum Cascade Lasers"; Poster: International Quantum Cascade Lasers School & Workshop, Policoro (Matera), Italy; 07.09.2014 - 12.09.2014; in "International Quantum Cascade Lasers School & Workshop 2014", (2014), 182 - 183. BibTeX |
| 1518. | D. Osintsev, V. Sverdlov, S. Selberherr: "Increasing Mobility and Spin Lifetime with Shear Strain in Thin Silicon Films"; Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2. BibTeX |
| 1517. | D. Osintsev, V. Sverdlov, T. Windbacher, S. Selberherr: "Increasing Mobility and Spin Lifetime with Shear Strain in Thin Silicon Films"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 193 - 196 doi:10.1109/SISPAD.2014.6931596. BibTeX |
| 1516. | T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr: "Influence of Device Geometry on the Non-Volatile Magnetic Flip Flop Characteristics"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 297 - 300 doi:10.1109/SISPAD.2014.6931622. BibTeX |
| 1515. | T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr: "Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop"; Talk: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 07.04.2014 - 09.04.2014; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9, 9 - 12 doi:10.1109/ULIS.2014.6813893. BibTeX |
| 1514. | O. Baumgartner, Z. Stanojevic, L. Filipovic, A. Grill, T. Grasser, H. Kosina, M. Karner: "Investigation of Quantum Transport in Nanoscaled GaN High Electron Mobility Transistors"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 117 - 120 doi:10.1109/SISPAD.2014.6931577. BibTeX |
| 1513. | V. Sverdlov, H. Mahmoudi, A. Makarov, T. Windbacher, S. Selberherr: "Magnetic Tunnel Junctions for Future Memory and Logic-in-Memory Applications"; Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland; (invited) 19.06.2014 - 21.06.2014; in "Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems", (2014), 17. BibTeX |
| 1512. | M. Schrems, J. Siegert, P. Dorfi, J. Kraft, E. Stueckler, F. Schrank, S. Selberherr: "Manufacturing of 3D Integrated Sensors and Circuits"; Talk: European Solid-State Device Research Conference (ESSDERC), Venice, Italy; (invited) 22.09.2014 - 26.09.2014; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2014), ISBN: 978-1-4799-4377-7, 162 - 165 doi:10.1109/ESSDERC.2014.6948785. BibTeX |
| 1511. | B. Kaczer, C. Chen, P. Weckx, Ph. J. Roussel, M. Toledano-Luque, M. Cho, J. Watt, K. Chanda, G. Groeseneken, T. Grasser: "Maximizing reliable performance of advanced CMOS circuits-A case study"; Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, 2D.4.1 - 2D.4.6. BibTeX |
| 1510. | F. Rudolf, Y. Wimmer, J. Weinbub, K. Rupp, S. Selberherr: "Mesh Generation Using Dynamic Sizing Functions"; Talk: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 15.06.2014 - 20.06.2014; in "Proc. 4th European Seminar on Computing", (2014), 191. BibTeX |
| 1509. | A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr: "Micromagnetic Modeling of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer"; Talk: 10th European Conference on Magnetic Sensors and Actuators (EMSA 2014), Vienna, Austria; 06.07.2014 - 09.07.2014; in "Book of Abstracts", (2014), ISBN: 978-3-85465-021-8, 166. BibTeX |
| 1508. | G.A. Rott, K. Rott, H. Reisinger, W. Gustin, T. Grasser: "Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel Transistors"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 29.09.2014 - 02.10.2014; in "Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), 40. BibTeX |
| 1507. | D. Osintsev, V. Sverdlov, S. Selberherr: "Mobility and Spin Lifetime Enhancement in Thin Silicon Films by Shear Strain"; Talk: APS March Meeting, Denver, USA; 03.03.2014 - 07.03.2014; in "Bulletin of the American Physical Society (APS March Meeting)", (2014), 59/1, 1 page(s) . BibTeX |
| 1506. | V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr: "Modeling Silicon Spintronics"; Talk: International Conference on Mathematical Models and Methods in Applied Sciences (MMMAS), Saint-Petersburg, Russia; (invited) 23.09.2014 - 25.09.2014; in "Abstracts 2014", (2014), 78. BibTeX |
| 1505. | A. Makarov, D. Osintsev, V. Sverdlov, S. Selberherr: "Modeling Spin-Based Electronic Devices"; Talk: Nano and Giga Challenges in Microelectronics (NGCM), Phoenix, USA; (invited) 10.03.2014 - 14.03.2014; in "Book of Abstracts", (2014), 1 page(s) . BibTeX |
| 1504. | S. Selberherr: "Modeling Spin-Based Electronic Devices"; Talk: IEEE EDS Distinguished Lecture, Zhejiang University, Hangzhou, China; (invited) 28.10.2014. BibTeX |
| 1503. | S. Selberherr: "Modeling Spin-Based Electronic Devices"; Talk: IEEE EDS Mini-Colloquium Distinguished Lecture, Serbian Academy of Sciences and Arts, Belgrade, Serbia; (invited) 12.05.2014. BibTeX |
| 1502. | V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, S. Selberherr: "Modeling Spin-Based Electronic Devices"; International Conference on Microelectronics (MIEL), Belgrade, Serbia; (invited) 12.05.2014 - 14.05.2014; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2014), ISBN: 978-1-4799-5295-3, 27 - 34 doi:10.1109/MIEL.2014.6842081. BibTeX |
| 1501. | V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, S. Selberherr: "Modeling of Spin-Based Silicon Technology"; Talk: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; (invited) 07.04.2014 - 09.04.2014; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9, 1 - 4 doi:10.1109/ULIS.2014.6813891. BibTeX |
| 1500. | K. Giering, C. Sohrmann, G. Rzepa, L. Heiß, T. Grasser, R. Jancke: "NBTI Modeling in Analog Circuits and its Application to Long-Term Aging Simulations"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 12.10.2014 - 16.10.2014; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 29 - 34 doi:10.1109/IIRW.2014.7049501. BibTeX |
| 1499. | I. Dimov, M. Nedjalkov, J. M. Sellier, S. Selberherr: "Neumann Series Analysis of the Wigner Equation Solution"; Talk: European Conference on Mathematics for Industry (ECMI), Taormina, Italy; (invited) 09.06.2014 - 14.06.2014; in "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), 459. BibTeX |
| 1498. | A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr: "New Design of Spin-Torque Nano-Oscillators"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona; (invited) 30.11.2014 - 05.12.2014; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2014), ISBN: 978-3-901578-28-1, 63. BibTeX |
| 1497. | S. E. Tyaginov, M. Bina, J. Franco, B. Kaczer, T. Grasser: "On the Importance of Electron-electron Scattering for Hot-carrier Degradation"; Talk: International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan; 08.09.2014 - 11.09.2014; in "Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM)", (2014), 858 - 859. BibTeX |
| 1496. | R. Orio, S. Gousseau, S. Moreau, H. Ceric, S. Selberherr, A. Farcy, F. Bay, K. Inal, P. Montmitonnet: "On the Material Depletion Rate Due to Electromigration in a Copper TSV Structure"; Poster: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake, CA, USA; 12.10.2014 - 16.10.2014; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7274-6, 111 - 114 doi:10.1109/IIRW.2014.7049523. BibTeX |
| 1495. | T. Grasser, W. Gös, Y. Wimmer, F. Schanovsky, G. Rzepa, M. Waltl, K. Rott, H. Reisinger, V. Afanas´Ev, A. Stesmans, A. El-Sayed, A. Shluger: "On the Microscopic Structure of Hole Traps in pMOSFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 15.12.2014 - 17.12.2014; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2014), ISBN: 978-1-4799-8001-7, 530 - 533 doi:10.1109/IEDM.2014.7047093. BibTeX |
| 1494. | Z. Stanojevic, O. Baumgartner, M. Karner, L. Filipovic, C. Kernstock, H. Kosina: "On the Validity of Momentum Relaxation Time in Low-Dimensional Carrier Gases"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 181 - 184 doi:10.1109/SISPAD.2014.6931593. BibTeX |
| 1493. | P. Ellinghaus, M. Nedjalkov, S. Selberherr: "Optimized Particle Regeneration Scheme for the Wigner Monte Carlo Method"; Talk: International Conference on Numerical Methods and Applications, Borovets, Bulgaria; 20.08.2014 - 24.08.2014; in "Eighth International Conference on Numerical Methods and Applications", (2014), 19. BibTeX |
| 1492. | K. Rupp, Ph. Tillet, F. Rudolf, J. Weinbub, T. Grasser, A. Jüngel: "Performance Portability Study of Linear Algebra Kernels in OpenCL"; Talk: International Workshop on OpenCL (IWOCL), Bristol, UK; 12.05.2014 - 13.05.2014; in "Proceedings of the International Workshop on OpenCL 2013 & 2014 (IWOCL)", (2014), ISBN: 978-1-4503-3007-7, 11 page(s) doi:10.1145/2664666.2664674. BibTeX |
| 1491. | S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, O. Triebl, B. Kaczer, T. Grasser: "Physical Modeling of Hot-Carrier Degradation for Short- and Long-channel MOSFETs"; Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, XT16.1 - XT16.8. BibTeX |
| 1490. | Y. Wimmer, S. E. Tyaginov, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser: "Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 12.10.2014 - 16.10.2014; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 58 - 62 doi:10.1109/IIRW.2014.7049511. BibTeX |
| 1489. | G. Rzepa, W. Gös, G.A. Rott, K. Rott, M. Karner, C. Kernstock, B. Kaczer, H. Reisinger, T. Grasser: "Physical Modeling of NBTI: From Individual Defects to Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 81 - 84 doi:10.1109/SISPAD.2014.6931568. BibTeX |
| 1488. | L. Filipovic, R. Orio, S. Selberherr: "Process and Performance of Copper TSVs"; Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2. BibTeX |
| 1487. | L. Filipovic, R. Orio, S. Selberherr: "Process and Reliability of SF6/O2 Plasma Etched Copper TSVs"; Talk: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Ghent, Belgium; 07.04.2014 - 09.04.2014; in "Proceedings of the IEEE 15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)", (2014), ISBN: 978-1-4799-4791-1, 4 page(s) doi:10.1109/EuroSimE.2014.6813768. BibTeX |
| 1486. | T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Pushing a Non-Volatile Magnetic Device Structure Towards a Universal CMOS Logic Replacement"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona; (invited) 30.11.2014 - 05.12.2014; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2014), ISBN: 978-3-901578-28-1, 62. BibTeX |
| 1485. | H. Ceric, W. H. Zisser, S. Selberherr: "Quantum Mechanical Calculations of Electromigration Characteristics"; Talk: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; (invited) 15.10.2014 - 17.10.2014; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 21. BibTeX |
| 1484. | J. Franco, B. Kaczer, N. Waldron, Ph. J. Roussel, A. Alian, M. Pourghaderi, Z. Ji, T. Grasser, T. Kauerauf, S. Sioncke, N. Collaert, A. Thean, G. Groeseneken: "RTN and PBTI-induced Time-Dependent Variability of Replacement Metal-Gate High-k InGaAs FinFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 15.12.2014 - 17.12.2014; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2014), ISBN: 978-1-4799-8001-7, 506 - 509 doi:10.1109/IEDM.2014.7047087. BibTeX |
| 1483. | M. Vexler, Yu. Illarionov, S. E. Tyaginov, N. S. Sokolov, V. V. Fedorov, T. Grasser: "Simulation of the Electrical Characteristics of the Devices with Thin Calcium Fluoride Films on Silicon-(111) Using MINIMOS-NT"; Talk: DIELECTRICS-2014, St-Petersburg, Russia; 02.06.2014 - 06.06.2014; in "Materials of XIII International conference DIELECTRICS", (2014), 159 - 162. BibTeX |
| 1482. | Y. Wang, M. Baboulin, K. Rupp, O. Le Maitre: "Solving 3D incompressible Navier-Stokes equations on hybrid CPU/GPU systems"; Talk: High Performance Computing Symposium (HPC), Tampa, Florida, USA; 13.04.2014 - 16.04.2014; in "HPC '14 Proceedings of the High Performance Computing Symposium", (2014), 1 - 8. BibTeX |
| 1481. | V. Sverdlov, D. Osintsev, S. Selberherr: "Spin Behaviour in Strained Silicon Films"; Talk: European Material Research Society (E-MRS) Fall Meeting, Warsaw, Poland; (invited) 15.09.2014 - 18.09.2014; in "Abstracts of E-MRS Fall Meeting", (2014), 1 page(s) . BibTeX |
| 1480. | J. Ghosh, V. Sverdlov, S. Selberherr: "Spin Diffusion in Silicon from a Ferromagnetic Contact"; Talk: 10th European Conference on Magnetic Sensors and Actuators (EMSA 2014), Vienna, Austria; 06.07.2014 - 09.07.2014; in "Book of Abstracts", (2014), ISBN: 978-3-85465-021-8, 165. BibTeX |
| 1479. | J. Ghosh, V. Sverdlov, S. Selberherr: "Spin Injection in Silicon: The Role of Screening Effects"; Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 63 - 64. BibTeX |
| 1478. | S. Touski, Z. Chaghazardi, M. Pourfath, M. Moradinasab, R. Faez, H. Kosina: "Spin Transport in Graphene Nanoribbons: The Role of Surface-Corrugation"; Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 101 - 102. BibTeX |
| 1477. | L. Filipovic, S. Selberherr: "Spray Pyrolysis Deposition for Gas Sensor Integration in the Backend of Standard CMOS Processes"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Guilin, China; (invited) 28.10.2014 - 31.10.2014; in "Proc.Intl.Conf.on Solid-State and Integrated Circuit Technology (ICSICT)", (2014), ISBN: 978-1-4799-3282-5, 1692 - 1695 doi:10.1109/ICSICT.2014.7021507. BibTeX |
| 1476. | S. Papaleo, W. H. Zisser, A. P. Singulani, H. Ceric, S. Selberherr: "Stress Analysis in Open TSVs after Nanoindentation"; Talk: GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects, Thun, Switzerland; 04.09.2014 - 05.09.2014; in "Abstracts", (2014), 39 - 40. BibTeX |
| 1475. | L. Filipovic, S. Selberherr: "Stress Considerations for System-on-Chip Gas Sensor Integration in CMOS Technology"; Talk: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 15.10.2014 - 17.10.2014; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 46. BibTeX |
| 1474. | W. H. Zisser, H. Ceric, S. Selberherr: "Stress Development and Void Evolution in Open TSVs"; Talk: GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects, Thun, Switzerland; 04.09.2014 - 05.09.2014; in "Abstracts", (2014), 38 - 39. BibTeX |
| 1473. | S. Papaleo, W. H. Zisser, A. P. Singulani, H. Ceric, S. Selberherr: "Stress Evolution During the Nanoindentation in Open TSVs"; Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 15.10.2014 - 17.10.2014; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 52. BibTeX |
| 1472. | V. Sverdlov, A. Makarov, S. Selberherr: "Structural Optimization of MTJs for STT-MRAM and Oscillator Applications"; Talk: Symposium on CMOS Emerging Technologies, Grenoble, France; 06.07.2014 - 08.07.2014; in "Abstracts: 2014 CMOS Emerging Technologies Research Symposium", (2014), ISBN: 978-1-927500-45-3, 19. BibTeX |
| 1471. | E. Bury, R. Degraeve, M. Cho, B. Kaczer, W. Gös, T. Grasser, N. Horiguchi, G. Groeseneken: "Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG Devices"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3929-9, 254 - 257. BibTeX |
| 1470. | F. Rudolf, J. Weinbub, K. Rupp, A. Morhammer, S. Selberherr: "Template-Based Mesh Generation for Semiconductor Devices"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 217 - 220 doi:10.1109/SISPAD.2014.6931602. BibTeX |
| 1469. | L. Filipovic, S. Selberherr: "The Effects of Etching and Deposition on the Performance and Stress Evolution of Open Through Silicon Vias"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 29.09.2014 - 02.10.2014; in "Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), 36. BibTeX |
| 1468. | J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr: "The Multi-Dimensional Transient Challenge: The Wigner Particle Approach"; Talk: International Workshop on Computational Electronics (IWCE), Paris, France; (invited) 03.06.2014 - 06.06.2014; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 119 - 120. BibTeX |
| 1467. | P. Ellinghaus, M. Nedjalkov, S. Selberherr: "The Wigner Monte Carlo Method for Accurate Semiconductor Device Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 113 - 116 doi:10.1109/SISPAD.2014.6931576. BibTeX |
| 1466. | N. Neophytou, H. Kosina: "Thermoelectric Properties of Gated Silicon Nanowires"; Talk: APS March Meeting, Denver, USA; 03.03.2014 - 07.03.2014; in "Bulletin of the American Physical Society (APS March Meeting)", (2014), 1 page(s) . BibTeX |
| 1465. | N. Neophytou, H. Kosina: "Thermoelectric properties of gated Si nanowires"; Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 197 - 198. BibTeX |
| 1464. | L. Filipovic, F. Rudolf, E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, A. P. Singulani, R. Minixhofer, S. Selberherr: "Three-Dimensional Simulation for the Reliability and Electrical Performance of Through-Silicon Vias"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 341 - 344 doi:10.1109/SISPAD.2014.6931633. BibTeX |
| 1463. | D. Osintsev, V. Sverdlov, S. Selberherr: "Valley Degeneracy and Spin Lifetime Enhancement in Stressed Silicon Films"; Poster: 8th International Conference on Physics and Applications of Spin Phenomena in Solids (PASPS VIII), Washington, D.C., USA; 28.07.2014 - 31.07.2014; in "Book of Abstracts", (2014), 1. BibTeX |
| 1462. | D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr: "Valley Splitting and Spin Lifetime Enhancement in Strained Silicon Heterostructures"; Poster: International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 23.02.2014 - 28.02.2014; in "Proceedings of International Winterschool on New Developments in Solid State Physics", (2014), 88 - 89. BibTeX |
| 1461. | D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr: "Valley Splitting and Spin Lifetime Enhancement in Ultra-Scaled MOSFETs"; Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 59 - 60. BibTeX |
| 1460. | W. H. Zisser, H. Ceric, S. Selberherr: "Void Evolution in Open TSVs"; Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 15.10.2014 - 17.10.2014; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 59. BibTeX |
| 1459. | W. Gös, M. Toledano-Luque, O. Baumgartner, F. Schanovsky, B. Kaczer, T. Grasser: "A Comprehensive Model for Correlated Drain and Gate Current Fluctuations"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 46 - 47. BibTeX |
| 1458. | F. Schanovsky, O. Baumgartner, W. Gös, T. Grasser: "A Detailed Evaluation of Model Defects as Candidates for the Bias Temperature Instability"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 1 - 4 doi:10.1109/SISPAD.2013.6650559. BibTeX |
| 1457. | K. Rupp, F. Rudolf, J. Weinbub: "A Discussion of Selected Vienna-Libraries for Computational Science"; Talk: C++Now, Aspen, CO, USA; 12.05.2013 - 17.05.2013; in "Proceedings of C++Now (2013)", (2013), 10 page(s) . BibTeX |
| 1456. | K. Rupp, Ph. Tillet, B. Smith, T. Grasser, A. Jungel: "A Note on the GPU Acceleration of Eigenvalue Computations"; Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodes, Greece; 21.09.2013 - 27.09.2013; in "AIP Proceedings, volume 1558", (2013), 1536 - 1539. BibTeX |
| 1455. | Yu. Illarionov, S. E. Tyaginov, M. Bina, T. Grasser: "A method to determine the lateral trap position in ultra-scaled MOSFETs"; Talk: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 24.09.2013 - 27.09.2013; in "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials(SSDM)", (2013), ISBN: 978-4-86348-362-0, 728 - 729. BibTeX |
| 1454. | R. Orio, S. Selberherr: "About Voids in Copper Interconnects"; Talk: International Conference on Materials for Advanced Technologies (ICMAT), Singapore; (invited) 30.06.2013 - 05.07.2013; in "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2013)", (2013), 8. BibTeX |
| 1453. | T. Grasser, K. Rott, H. Reisinger, P.-J. Wagner, W. Gös, F. Schanovsky, M. Waltl, M. Toledano-Luque, B. Kaczer: "Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect Spectroscopy"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1 - 6. BibTeX |
| 1452. | F. Schanovsky, W. Gös, T. Grasser: "Advanced Modeling of Charge Trapping at Oxide Defects"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; (invited) 03.09.2013 - 05.09.2013; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 451 - 458 doi:10.1109/SISPAD.2013.6650671. BibTeX |
| 1451. | H. Ceric, R. Orio, S. Selberherr: "Analysis of Solder Bump Electromigration Reliability"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 713 - 716 doi:10.1109/IPFA.2013.6599258. BibTeX |
| 1450. | G. Strasser, B. Schwarz, P. Reininger, O. Baumgartner, W. Schrenk, T. Zederbauer, H. Detz, A. M. Andrews, H. Kosina: "Bi-functional Quantum Cascade Laser/Detectors for Integrated Photonics"; Talk: ÖPG-Jahrestagung, Linz; (invited) 02.09.2013 - 06.09.2013; . BibTeX |
| 1449. | A. Makarov, V. Sverdlov, S. Selberherr: "Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer: Micromagnetic Modeling"; Poster: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 08.12.2013 - 13.12.2013; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2013), 2 page(s) . BibTeX |
| 1448. | D. Osintsev, V. Sverdlov, S. Selberherr: "Calculation of the Electron Mobility and Spin Lifetime Enhancement by Strain in Thin Silicon Films"; Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 24.06.2013 - 28.06.2013; in "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6, 69 - 70. BibTeX |
| 1447. | M. Molnar, V. Palankovski, D. Donoval, J. Kuzmik, J. Kovac, A. Chvala, J. Marek, P. Pribytny, S. Selberherr: "Characterization of InAlN/GaN HEMTs at Elevated Temperatures Supported by Numerical Simulation"; Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Warnemunde, Germany; 26.05.2013 - 29.05.2013; in "Proceedings of the Workshop on Compound Semiconductor Devices and Integrated Circuits", (2013), ISBN: 978-3-00-041435-0, 135 - 136. BibTeX |
| 1446. | A. Makarov, V. Sverdlov, S. Selberherr: "Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators"; Talk: Intl.Conf.on Information Engineering (ICIE), Hong Kong; 01.11.2013 - 02.11.2013; in "Abstracts Intl.Conf.on Information Engineering (ICIE)", (2013), 7. BibTeX |
| 1445. | A. Makarov, V. Sverdlov, S. Selberherr: "Concept of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs"; Talk: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 24.09.2013 - 27.09.2013; in "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (SSDM 2013)", (2013), ISBN: 978-4-86348-362-0, 796 - 797. BibTeX |
| 1444. | R. Coppeta, H. Ceric, D. Holec, T. Grasser: "Critical thickness for GaN thin film on AlN substrate"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 133 - 136. BibTeX |
| 1443. | P. Weckx, B. Kaczer, M. Toledano-Luque, T. Grasser, Ph. J. Roussel, H. Kukner, P. Raghavan, F. Catthoor, G. Groeseneken: "Defect-based Methodology for Workload-dependent Circuit Lifetime Projections - Application to SRAM"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1 - 7. BibTeX |
| 1442. | M. Toledano-Luque, B. Kaczer, J. Franco, P. Roussel, M. Bina, T. Grasser, M. Cho, P. Weckx, G Groeseneken: "Degradation of time dependent variability due to interface state generation"; Talk: International Symposium on VLSI Technology, Kyoto, Japan; 11.06.2013 - 14.06.2013; in "2013 Symposium on VLSI Technology (VLSIT)", (2013), ISBN: 978-1-4673-5226-0, 190 - 191. BibTeX |
| 1441. | H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Design and Applications of Magnetic Tunnel Junction Based Logic Circuits"; Talk: The 9th Conference on Ph.D. Research in Microelectronics & Electronics- PRIME 2013, Villach, Austria; 24.06.2013 - 27.06.2013; in "Proceedings of the 9th Conference on Ph.D. Research in Microelectronics & Electronics", (2013), ISBN: 978-1-4673-4580-4, 157 - 160 doi:10.1109/PRIME.2013.6603122. BibTeX |
| 1440. | G. Pobegen, M. Nelhiebel, T. Grasser: "Detrimental impact of hydrogen passivation on NBTI and HC degradation"; Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1 - 6. BibTeX |
| 1439. | O. Baumgartner, M. Bina, W. Gös, F. Schanovsky, M. Toledano-Luque, B. Kaczer, H. Kosina, T. Grasser: "Direct Tunneling and Gate Current Fluctuations"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 17 - 20 doi:10.1109/SISPAD.2013.6650563. BibTeX |
| 1438. | G.A. Rott, H. Nielen, H. Reisinger, W. Gustin, S. E. Tyaginov, T. Grasser: "Drift Compensating Effect during Hot-Carrier Degradation of 130nm Dual Gate Oxide p-channel Transistors"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 73 - 77. BibTeX |
| 1437. | A. P. Singulani, H. Ceric, E. Langer, S. Carniello: "Effects of Bosch scallops on metal layer stress of an open Through Silicon Via technology"; Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), ISBN: 978-1-4799-0112-8, CP.2.1 - CP.2.5 doi:10.1109/IRPS.2013.6532066. BibTeX |
| 1436. | W. H. Zisser, H. Ceric, R. Orio, S. Selberherr: "Electromigration Analyses of Open TSVs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 244 - 247 doi:10.1109/SISPAD.2013.6650620. BibTeX |
| 1435. | H. Ceric, A. P. Singulani, R. Orio, S. Selberherr: "Electromigration Enhanced Growth of Intermetallic Compound in Solder Bumps"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 166 - 169 doi:10.1109/IIRW.2013.6804185. BibTeX |
| 1434. | W. H. Zisser, H. Ceric, R. Orio, S. Selberherr: "Electromigration Induced Stress in Open TSVs"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 142 - 145 doi:10.1109/IIRW.2013.6804179. BibTeX |
| 1433. | S. Touski, M. Pourfath, H. Kosina: "Electronic Transport in Graphene Nanoribbons in the Presence of Substrate Surface Corrugation"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 108 - 109. BibTeX |
| 1432. | D. Osintsev, V. Sverdlov, S. Selberherr: "Enhanced Intervalley Splitting and Reduced Spin Relaxation in Strained Thin Silicon Films"; Talk: APS March Meeting, Baltimore, Maryland, USA; 18.03.2013 - 22.03.2013; in "Bulletin American Physical Society (APS March Meeting)", (2013), 1 page(s) . BibTeX |
| 1431. | R. Coppeta, H. Ceric, B. Karunamurthy, T. Grasser: "Epitaxial Volmer-Weber Growth Modelling"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 45 - 48 doi:10.1109/SISPAD.2013.6650570. BibTeX |
| 1430. | S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, Y. Wimmer, B. Kaczer, T. Grasser: "Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETs"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 98 - 101. BibTeX |
| 1429. | D. Osintsev, V. Sverdlov, S. Selberherr: "Evaluation of Spin Lifetime in Strained UT2B Silicon-On-Insulator MOSFETs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 236 - 239 doi:10.1109/SISPAD.2013.6650618. BibTeX |
| 1428. | B. Kaczer, V. Afanas´Ev, K. Rott, F. Cerbu, J. Franco, W. Gös, T. Grasser, O. Madia, D. Nguyen, A. Stesmans, H. Reisinger, M. Toledano-Luque, P. Weckx: "Experimental characterization of BTI defects"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; (invited) 03.09.2013 - 05.09.2013; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 444 - 450 doi:10.1109/SISPAD.2013.6650670. BibTeX |
| 1427. | Z. Stanojevic, M. Karner, H. Kosina: "Exploring the Design Space of Non-Planar Channels: Shape, Orientation, and Strain"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 09.12.2013 - 11.12.2013; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2013), 332 - 335 doi:10.1109/IEDM.2013.6724618. BibTeX |
| 1426. | A. Makarov, V. Sverdlov, S. Selberherr: "Fast Switching STT-MRAM Cells for Future Universal Memory"; Talk: Advanced Workshop on Frontiers in Electronics (WOFE), San Juan, Puerto Rico; (invited) 17.12.2013 - 20.12.2013; in "Abstracts Advanced Workshop on Frontiers in Electronics (WOFE)", (2013), 1 page(s) . BibTeX |
| 1425. | N. Neophytou, Z. Stanojevic, H. Kosina: "Full Band Calculations of Low-field Mobility in p-type Silicon Nanowire MOSFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 81 - 84 doi:10.1109/SISPAD.2013.6650579. BibTeX |
| 1424. | T. Grasser: "Fundamentals of RTN, BTI, and Hot Carrier Degradation: A Matter of Timescales"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA (Tutorial); (invited) 14.04.2013 - 18.04.2013; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1. BibTeX |
| 1423. | A. Makarov, V. Sverdlov, S. Selberherr: "Geometry Optimization of Spin-Torque Oscillators Composed of Two MgO-MTJs with a Shared Free Layer"; Talk: International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey; 02.09.2013 - 06.09.2013; in "Proceedings of the International Conference on Nanoscale Magnetism", (2013), 69. BibTeX |
| 1422. | T. Grasser, K. Rott, H. Reisinger, M. Waltl, P.-J. Wagner, F. Schanovsky, W. Gös, G. Pobegen, B. Kaczer: "Hydrogen-Related Volatile Defects as the Possible Cause for the Recoverable Component of NBTI"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 09.12.2013 - 11.12.2013; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2013), 409 - 412 doi:10.1109/IEDM.2013.6724637. BibTeX |
| 1421. | A. P. Singulani, H. Ceric, L. Filipovic, E. Langer: "Impact of Bosch Scallops Dimensions on Stress of an Open Through Silicon Via Technology"; Talk: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Poland; 14.04.2013 - 17.04.2013; in "Proceedings of the IEEE 14th International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EurSimE)", (2013), ISBN: 978-1-4673-6137-8, 6 page(s) doi:10.1109/EuroSimE.2013.6529938. BibTeX |
| 1420. | H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Impact of Device Parameters on the Reliability of the Magnetic Tunnel Junction Based Implication Logic Gates"; Poster: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; 08.04.2013 - 11.04.2013; in "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4, 68 - 69. BibTeX |
| 1419. | H. Ceric, A. P. Singulani, R. Orio, S. Selberherr: "Impact of Intermetallic Compound on Solder Bump Electromigration Reliability"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 73 - 76 doi:10.1109/SISPAD.2013.6650577. BibTeX |
| 1418. | J. Weinbub, K. Rupp, S. Selberherr: "Increasing Flexibility and Reusability of Finite Element Simulations With ViennaX"; Talk: International Congress on Computational Engineering and Sciences (FEMTEC), Las Vegas, USA; 20.05.2013 - 25.05.2013; in "Abstracts 4th International Congress on Computational Engineering and Sciences", (2013), 1 page(s) . BibTeX |
| 1417. | D. Osintsev, V. Sverdlov, S. Selberherr: "Influence of Surface Roughness Scattering on Spin Lifetime in Silicon"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 76 - 77. BibTeX |
| 1416. | R. Orio, H. Ceric, S. Selberherr: "Influence of Temperature on the Standard Deviation of Electromigration Lifetimes"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 232 - 235 doi:10.1109/SISPAD.2013.6650617. BibTeX |
| 1415. | J. Ghosh, V. Sverdlov, S. Selberherr: "Influence of a Space Charge Region on Spin Transport in Semiconductor"; Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland, USA; 11.12.2013 - 13.12.2013; in "Abstracts International Semiconductor Device Research Symposium (ISDRS)", (2013), ISBN: 978-1-63173-156-3, 27. BibTeX |
| 1414. | D. Osintsev, V. Sverdlov, S. Selberherr: "Influence of the Valley Degeneracy on Spin Relaxation in Thin Silicon Films"; Poster: International Conference on Ultimate Integration of Silicon (ULIS), University of Warwick, UK; 19.03.2013 - 21.03.2013; in "The 14th Edition of the `International Conference on Ultimate Integration on Silicon´ (ULIS 2013)", (2013), ISBN: 978-1-4673-4802-7, 221 - 224 doi:10.1109/ULIS.2013.6523525. BibTeX |
| 1413. | A. Harrer, B. Schwarz, P. Reininger, R. Gansch, T. Zederbauer, A. M. Andrews, S. Kalchmair, W. Schrenk, O. Baumgartner, Z. Stanojevic, H. Kosina, G. Strasser: "Intersubband Detectors"; Talk: 3rd International Nanophotonics Meeting 2013, Salzburg; 01.09.2013 - 03.09.2013; . BibTeX |
| 1412. | N. Neophytou, H. Karamitaheri, H. Kosina: "Low Dimensional Semiconductor Thermoelectric Materials: Design Approaches from Atomistic Calculations for Electrons and Phonons"; Talk: The 32nd International Conference on Thermoelectrics, Kobe, Japan; 30.06.2013 - 04.07.2013; in "Book of Abstracts", (2013), 1 page(s) . BibTeX |
| 1411. | N. Neophytou, Z. Stanojevic, H. Kosina: "Low-Field Mobility of Ultra-Narrow Si Nanowire MOSFETs Using Self-Consistent Full-Band Simulations"; Poster: International Conference on One Dimensional Nanomaterials (ICON), Annecy, France; 23.09.2013 - 26.09.2013; in "Booklet of Abstracts, Fifth International Conference on One Dimensional Nanomaterials", (2013), 142. BibTeX |
| 1410. | H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "MRAM-based Logic Array for Large-Scale Non-Volatile Logic-in-Memory Applications"; Talk: 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA; 15.07.2013 - 17.07.2013; in "Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures", (2013), ISBN: 978-1-4799-0873-8, 2 page(s) doi:10.1109/NanoArch.2013.6623033. BibTeX |
| 1409. | A. Makarov, V. Sverdlov, S. Selberherr: "Magnetic oscillation of the transverse domain wall in a penta-layer MgO-MTJ"; Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 24.06.2013 - 28.06.2013; in "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6, 338 - 339. BibTeX |
| 1408. | M. Schrems, C. Schrank, J. Siegert, J. Kraft, J. Teva, S. Selberherr: "Metrology Requirements for Manufacturing 3D Integrated ICs"; Talk: International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN), Gaithersburg, USA; (invited) 25.03.2013 - 28.03.2013; in "Proceedings International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN)", (2013), 137 - 139. BibTeX |
| 1407. | L. Filipovic, O. Baumgartner, H. Kosina: "Modeling Direct Band-to-Band Tunneling using QTBM"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 212 - 215 doi:10.1109/SISPAD.2013.6650612. BibTeX |
| 1406. | V. Sverdlov, H. Mahmoudi, A. Makarov, D. Osintsev, J. Weinbub, T. Windbacher, S. Selberherr: "Modeling Spin-Based Devices in Silicon"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; (invited) 04.06.2013 - 07.06.2013; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 70 - 71. BibTeX |
| 1405. | L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank: "Modeling Spray Pyrolysis Deposition"; Talk: World Congress on Engineering (WCE), London, UK; 03.07.2013 - 05.07.2013; in "Proceedings of the World Congress on Engineering (WCE) Vol II", (2013), ISBN: 978-988-19252-8-2, 987 - 992. BibTeX |
| 1404. | Z. Stanojevic, H. Kosina: "Modeling Surface-Roughness-Induced Scattering in Non-Planar Silicon Nanostructures"; Talk: Silicon Nanoelectronics Workshop, Kyoto, Japan; 09.06.2013 - 10.06.2013; in "The 2013 Silicon Nanoelectronics Workshop (SNW)", (2013), 93 - 94. BibTeX |
| 1403. | M. Molnar, V. Palankovski, D. Donoval, J. Kuzmik, J. Kovac, A. Chvala, J. Marek, P. Pribytny, S. Selberherr: "Modeling and Characterization of InAlN/GaN HEMTs at Elevated Temperatures"; Talk: International Conference on Advances in Electronic and Photonic Technologies, High Tatras, Spa Novy Smokovec, Slovakia; 02.06.2013 - 05.06.2013; in "Proceedings of ADEPT International Conference on Advances in Electronic and Photonic Technologies", (2013), ISBN: 978-80-554-0689-3, 48 - 51. BibTeX |
| 1402. | O. Baumgartner, Z. Stanojevic, H. Kosina: "Modeling of the Effects of Band Structure and Transport in Quantum Cascade Detectors"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 86 - 87. BibTeX |
| 1401. | L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger: "Modeling the Growth of Thin SnO2 Films using Spray Pyrolysis Deposition"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 208 - 211 doi:10.1109/SISPAD.2013.6650611. BibTeX |
| 1400. | B. Schwarz, P. Reininger, W. Schrenk, H. Detz, O. Baumgartner, T. Zederbauer, A. M. Andrews, H. Kosina, G. Strasser: "Monolithically integrated quantum cascade laser and detector"; Talk: CLEO Europe 2013, München, Deutschland; 12.05.2013 - 16.05.2013; . BibTeX |
| 1399. | S. Wolf, N. Neophytou, Z. Stanojevic: "Monte Carlo Simulations Of Thermal Conductivity Nanoporous Si Membranes"; Talk: European Conference on Thermoelectrics (ECT), Noordwijk, The Netherlands; 18.11.2013 - 20.11.2013; in "Book of Abstracts", (2013), 1 - 4. BibTeX |
| 1398. | W. Gös, M. Toledano-Luque, F. Schanovsky, M. Bina, O. Baumgartner, B. Kaczer, T. Grasser: "Multi-Phonon Processes as the Origin of Reliability Issues"; Talk: Meeting of the Electrochemical Society (ECS), San Francisco, USA; (invited) 27.10.2013 - 01.11.2013; in "ECS Transactions 2013 - "Semiconductors, Dielectrics, and Materials for Nanoelectronics 11"", (2013), 58/7/, 31 - 47 doi:10.1149/05807.0031ecst. BibTeX |
| 1397. | T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr: "Novel Bias-Field-Free Large Gain Spin-Transfer Oscillator"; Talk: Annual Conference on Magnetism and Magnetic Materials, Denver, USA; 04.11.2013 - 08.11.2013; in "Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM)", (2013), 456 - 457. BibTeX |
| 1396. | T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr: "Novel MTJ-Based Shift Register for Non-Volatile Logic Applications"; Talk: 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA; 15.07.2013 - 17.07.2013; in "Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures", (2013), 36 - 37 doi:10.1109/NanoArch.2013.6623038. BibTeX |
| 1395. | T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr: "Novel Non-Volatile Magnetic Flip Flop"; Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Chicago Illinois USA; 29.07.2013 - 02.08.2013; in "In Proceedings of Seventh International School on Spintronics and Quantum Information Technology", (2013), 1 page(s) . BibTeX |
| 1394. | K. Rupp, B. Smith: "On Level Scheduling for Incomplete LU Factorization Preconditioners on Accelerators"; Talk: International Congress on Computational Engineering and Sciences (FEMTEC), Las Vegas, USA; 19.05.2013 - 24.05.2013; in "Abstracts 4th International Congress on Computational Engineering and Sciences", (2013), 1. BibTeX |
| 1393. | B. Schwarz, P. Reininger, D. Ristanic, O. Baumgartner, H. Detz, T. Zederbauer, D. MacFarland, A. M. Andrews, W. Schrenk, H. Kosina, G. Strasser: "On-Chip mid-infrared light generation and detection"; Talk: ITQW, New York, USA; (invited) 15.09.2013 - 20.09.2013; . BibTeX |
| 1392. | Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, D. V. Isakov, I. Grekhov: "Optical characterization of the injection properties of MIS structures with thin CaF2 and HfO2/SiO2 insulating layers on Silicon"; Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 16.09.2013 - 20.09.2013; in "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3, 229. BibTeX |
| 1391. | H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Optimization of Spin-Transfer Torque Magnetic Tunnel Junction-Based Logic Gates"; Poster: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 244 - 245. BibTeX |
| 1390. | D. Narducci, B. Lorenzi, R. Tonini, S. Frabboni, G. Gazzadi, G. Ottaviani, N. Neophytou, X. Zianni: "Paradoxical Enhancement of the Power Factor in Polycrystalline Silicon Due to the Formation of Nanovoids"; Talk: European Conference on Thermoelectrics (ECT), Noordwijk, The Netherlands; 18.11.2013 - 20.11.2013; in "Book of Abstracts", (2013), 52. BibTeX |
| 1389. | H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Performance Analysis and Comparison of Two 1T/1MTJ-based Logic Gates"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 163 - 166 doi:10.1109/SISPAD.2013.6650600. BibTeX |
| 1388. | M. Moradinasab, M. Pourfath, O. Baumgartner, H. Kosina: "Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers"; Poster: The 12th International Conference on Intersubband Transitions in Quantum Wells (ITQW), New York, USA; 15.09.2013 - 20.09.2013; . BibTeX |
| 1387. | K. Rupp, Ph. Tillet: "Performance-portable kernels in OpenCL: Lessons learned"; Talk: BLIS Retreat, Austin, USA; (invited) 05.09.2013 - 06.09.2013; . BibTeX |
| 1386. | R. Orio, S. Selberherr: "Physically Based Models of Electromigration"; Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; (invited) 03.06.2013 - 05.06.2013; in "Proceedings of the International Conference on Electron Devices and Solid-State Circuits (EDSSC)", (2013), 290, 1 - 2. BibTeX |
| 1385. | S. Amoroso, L. Gerrer, A. Asenov, J. M. Sellier, I. Dimov, M. Nedjalkov, S. Selberherr: "Quantum Insights in Gate Oxide Charge-Trapping Dynamics in Nanoscale MOSFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 25 - 28 doi:10.1109/SISPAD.2013.6650565. BibTeX |
| 1384. | T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, W. Gös, B. Kaczer: "Recent Advances in Understanding Oxide Traps in pMOS Transistors"; Talk: International Workshop on Dielectric Thin Films For Future Electron Devices: Science and Technology, Tokyo, Japan; (invited) 07.11.2013 - 09.11.2013; in "Proceedings of 2013 IWDTF", (2013), ISBN: 978-4-86348-383-5, 95 - 96. BibTeX |
| 1383. | D. Osintsev, V. Sverdlov, S. Selberherr: "Reduction of Momentum and Spin Relaxation Rate in Strained Thin Silicon Films"; Talk: European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania; 16.09.2013 - 20.09.2013; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2013), ISBN: 978-1-4799-0649-9, 334 - 337 doi:10.1109/ESSDERC.2013.6818886. BibTeX |
| 1382. | J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, G. Groeseneken, B. Schwarz, M. Bina, M. Waltl, P.-J. Wagner, T. Grasser: "Reduction of the BTI Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1 - 6. BibTeX |
| 1381. | D. Osintsev, V. Sverdlov, S. Selberherr: "Reduction of the Surface Roughness Induced Spin Relaxation in SOI Structures: An Analytical Approach"; Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Paris, France; 21.01.2013 - 23.01.2013; in "Conference Proceedings of the Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2013), 46, 1 page(s) . BibTeX |
| 1380. | J. Franco, B. Kaczer, P. Roussel, M. Toledano-Luque, P. Weckx, T. Grasser: "Relevance of non-exponential single-defect-induced threshold voltage shifts for NBTI Variability"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 69 - 72. BibTeX |
| 1379. | B. Kaczer, C. Chen, J. Watt, K. Chanda, P. Weckx, M. Toledano-Luque, G. Groeseneken, T. Grasser: "Reliability and Performance Considerations for NMOSFET Pass Gates in FPGA Applications"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 94 - 97. BibTeX |
| 1378. | J. Weinbub: "Research Software Engineering"; Talk: SPOMECH Autumn School, Ostrava, Czech Republic; (invited) 11.11.2013 - 15.11.2013; . BibTeX |
| 1377. | T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr: "Rigorous Simulation Study of a Novel Non-Volatile Magnetic Flip-Flop"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 368 - 371 doi:10.1109/SISPAD.2013.6650651. BibTeX |
| 1376. | H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "STT-MRAM-Based Reprogrammable Logic Gates for Large-Scale Non-Volatile Logic Integration"; Poster: International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey; 02.09.2013 - 06.09.2013; in "Proceedings of the International Conference on Nanoscale Magnetism", (2013), 208. BibTeX |
| 1375. | H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "STT-MTJ-Based Implication Logic Circuits for Non-Volatile Logic-in-Memory Applications"; Talk: Symposium on CMOS Emerging Technologies, Whistler, BC, Canada; (invited) 17.07.2013 - 19.07.2013; in "Book of Abstracts of the 2013 Symposium on CMOS Emerging Technologies (CMOS ET 2013)", (2013), ISBN: 978-1-927500-38-5, 1 page(s) . BibTeX |
| 1374. | B. Schwarz, P. Reininger, H. Detz, T. Zederbauer, A. M. Andrews, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser: "Same-Frequency Detector and Laser Utilizing Bi-Functional Quantum Cascade Active Regions"; Talk: SPIE Photonics West, San Francisco, CA, USA; 02.02.2013 - 07.02.2013; . BibTeX |
| 1373. | D. Osintsev, V. Sverdlov, S. Selberherr: "Shear Strain: An Efficient Spin Lifetime Booster in Advanced UTB2 SOI MOSFETs"; Talk: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; 08.04.2013 - 11.04.2013; in "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4, 64 - 65. BibTeX |
| 1372. | V. Sverdlov, S. Selberherr: "Silicon Spintronics and its Applications"; Talk: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; (invited) 08.04.2013 - 11.04.2013; in "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4, 51 - 52. BibTeX |
| 1371. | A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Simulation of Magnetic Oscillations in a System of two MTJs with a Shared Free Layer"; Poster: Soft Magnetic Materials Conference (SMM), Budapest, Hungary; 01.09.2013 - 04.09.2013; in "Abstracts Book of The 21st International Conference on Soft Magnetic Materials", (2013), 101. BibTeX |
| 1370. | M. Moradinasab, M. Pourfath, H. Kosina: "Spin Filtering in Zigzag Graphene Nanoribbons Using 7-5 Defects"; Poster: Graphene Week, Chemnitz, Germany; 02.06.2013 - 07.06.2013; in "Book of Abstracts", (2013), 250. BibTeX |
| 1369. | J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr: "Spin Injection and Diffusion in Silicon Based Devices from a Space Charge Layer"; Talk: Annual Conference on Magnetism and Magnetic Materials, Denver, USA; 04.11.2013 - 08.11.2013; in "Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM)", (2013), 713 - 714. BibTeX |
| 1368. | D. Osintsev, V. Sverdlov, S. Selberherr: "Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films"; Talk: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Toronto, Canada; 12.05.2013 - 16.05.2013; in "223th ECS Meeting", (2013), 894, ISBN: 978-1-56677-866-4, 1. BibTeX |
| 1367. | D. Osintsev, V. Sverdlov, S. Selberherr: "Spin Lifetime Enhancement in Strained Thin Silicon Films"; Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 08.12.2013 - 13.12.2013; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2013), 2 page(s) . BibTeX |
| 1366. | P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov, R. Georgieva: "Stochastic Alternative to Newton's Acceleration"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 03.06.2013 - 07.06.2013; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2013), 77 - 78. BibTeX |
| 1365. | A. P. Singulani, H. Ceric, S. Selberherr: "Stress Estimation in Open Tungsten TSV"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 65 - 68 doi:10.1109/SISPAD.2013.6650575. BibTeX |
| 1364. | A. P. Singulani, H. Ceric, S. Selberherr: "Stress Evolution in the Metal Layers of TSVs with Bosch Scallops"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, France; 30.09.2013 - 04.10.2013; . BibTeX |
| 1363. | A. P. Singulani, H. Ceric, E. Langer: "Stress Evolution on Tungsten Thin-Film of an Open Through Silicon Via Technology"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 216 - 220 doi:10.1109/IPFA.2013.6599155. BibTeX |
| 1362. | A. P. Singulani, H. Ceric, E. Langer: "Stress reduction induced by Bosch scallops on an open TSV technology"; Poster: IEEE International Interconnect Technology Conference (IITC), Kyoto, Japan; 13.06.2013 - 15.06.2013; in "Proceedings of the International Interconnect Techonology Conference (IITC)", (2013), ISBN: 978-1-4799-0438-9, 1 - 2 doi:10.1109/IITC.2013.6615578. BibTeX |
| 1361. | A. Makarov, V. Sverdlov, S. Selberherr: "Structural Optimization of MTJs with a Composite Free Layer"; Talk: SPIE Spintronics, San Diego, CA, USA; (invited) 25.08.2013 - 29.08.2013; in "Proceedings of SPIE Spintronics", (2013), OP108-86. BibTeX |
| 1360. | A. Makarov, V. Sverdlov, S. Selberherr: "Structural Optimization of MTJs with a Composite Free Layer"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 74 - 75. BibTeX |
| 1359. | Z. Stanojevic, H. Kosina: "Surface-Roughness-Scattering in Non-Planar Channels - the Role of Band Anisotropy"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 352 - 355 doi:10.1109/SISPAD.2013.6650647. BibTeX |
| 1358. | T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr: "Switching Optimization of an Electrically Read- and Writable Magnetic Logic Gate"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 238 - 239. BibTeX |
| 1357. | J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr: "The Role of Annihilation in a Wigner Monte Carlo Approach"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 03.06.2013 - 07.06.2013; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2013), 78. BibTeX |
| 1356. | P. Schwaha, J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr: "The Ultimate Equivalence Between Coherent Quantum and Classical Regimes"; Poster: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 152 - 153. BibTeX |
| 1355. | H. Karamitaheri, N. Neophytou, H. Kosina: "Thermal Conductivity of Si Nanowires Using Atomistic Phonon Dispersions"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 98 - 99. BibTeX |
| 1354. | H. Karamitaheri, N. Neophytou, H. Kosina: "Thermal Conductivity of Si Nanowires and Ultra Thin-Layers Using Atomistic Phonon Dispersions"; Talk: The 32nd International Conference on Thermoelectrics, Kobe, Japan; 30.06.2013 - 04.07.2013; in "Book of Abstracts", (2013), 1 page(s) . BibTeX |
| 1353. | N. Neophytou, H. Kosina: "Thermoelectric Power Factor Engineering of Low-Dimensional and Nanocomposite Si Nanostructures"; Talk: APS March Meeting, Baltimore, Maryland, USA; 18.03.2013 - 22.03.2013; in "Bulletin American Physical Society (APS March Meeting)", (2013), 1 page(s) . BibTeX |
| 1352. | B. Schwarz, P. Reininger, O. Baumgartner, T. Zederbauer, H. Detz, A. M. Andrews, W. Schrenk, H. Kosina, G. Strasser: "Towards Mid-Infrared On-Chip Sensing utilizing a bi-functional Quantum Cascade Laser/Detector"; Talk: Conference on Electronic Properties of Two-Dimensional Systems / Modulated Semiconductor Structures (EP2Ds-MSS), Wroclaw, Polen; 01.07.2013 - 05.07.2013; . BibTeX |
| 1351. | Ph. Tillet, K. Rupp, S. Selberherr, C. Lin: "Towards Performance-Portable, Scalable, and Convenient Linear Algebra"; Talk: USENIX Workshop on Hot Topics in Parallelism, San Jose, CA, USA; 24.06.2013 - 25.06.2013; in "Proceedings of 5th USENIX Workshop on Hot Topics in Parallelism", (2013), 1 - 8. BibTeX |
| 1350. | P. Reininger, B. Schwarz, A. Wirthmüller, A. Harrer, O. Baumgartner, H. Detz, T. Zederbauer, D. MacFarland, A. M. Andrews, W. Schrenk, L. Hvozdara, H. Kosina, G. Strasser: "Towards higher temperature operation of quantum cascade detectors"; Talk: ITQW, New York, USA; 15.09.2013 - 20.09.2013; . BibTeX |
| 1349. | G.G. Kareva, M. I. Vexler, Yu. Illarionov: "Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling Diode"; Poster: International Conference on Insulating Films on Semiconductors (INFOS), Cracow, Poland; 25.06.2013 - 28.06.2013; in "Book of Abstracts", (2013), ISBN: 978-83-7814-115-0, 246 - 247. BibTeX |
| 1348. | A. Makarov, V. Sverdlov, S. Selberherr: "Transverse Domain Wall Formation in a Free Layer: A Mechanism for Switching Failure in a MTJ-based STT-MRAM"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 267 - 270 doi:10.1109/IPFA.2013.6599165. BibTeX |
| 1347. | M. I. Vexler, Yu. Illarionov, S. M. Suturin, V. V. Fedorov, N. S. Sokolov: "Tunnel charge transport in Au/CaF2/Si(111) system"; Talk: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 16.09.2013 - 20.09.2013; in "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3, 74. BibTeX |
| 1346. | S. E. Tyaginov, D. Osintsev, Yu. Illarionov, J.M. Park, H. Enichlmair, M. I. Vexler, T. Grasser: "Tunnelling of strongly non-equilibrium carriers in the transistors of traditional configuration"; Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 16.09.2013 - 20.09.2013; in "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3, 441. BibTeX |
| 1345. | J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr: "Two-dimensional Transient Wigner Particle Model"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 404 - 407 doi:10.1109/SISPAD.2013.6650660. BibTeX |
| 1344. | W. Gös, M. Toledano-Luque, O. Baumgartner, M. Bina, F. Schanovsky, B. Kaczer, T. Grasser: "Understanding Correlated Drain and Gate Current Fluctuations"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, France; (invited) 30.09.2013 - 04.10.2013; in "20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2013), 51 - 56. BibTeX |
| 1343. | W. Gös, M. Toledano-Luque, O. Baumgartner, M. Bina, F. Schanovsky, B. Kaczer, T. Grasser: "Understanding Correlated Drain and Gate Current Fluctuations"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 51 - 56. BibTeX |
| 1342. | J. Franco, B. Kaczer, Ph. J. Roussel, J. Mitard, S. Sioncke, L. Witters, H. Mertens, T. Grasser, G. Groeseneken: "Understanding the Suppressed Charge Trapping in Relaxed- and Strained Ge/SiO2/HfO2 pMOSFETs and Implications for the Screening of Alternative High-Mobility Substrate/Dielectric CMOS Gate Stacks"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 09.12.2013 - 11.12.2013; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2013), 397 - 400 doi:10.1109/IEDM.2013.6724634. BibTeX |
| 1341. | D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr: "Using Strain to Increase the Reliability of Scaled Spin MOSFETs"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 770 - 773 doi:10.1109/IPFA.2013.6599272. BibTeX |
| 1340. | Z. Stanojevic, O. Baumgartner, K. Schnass, M. Karner, H. Kosina: "VSP - a Quantum Simulator for Engineering Applications"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 132 - 133. BibTeX |
| 1339. | K. Rupp, Ph. Tillet, F. Rudolf, J. Weinbub: "ViennaCL - Portable High Performance at High Convenience"; Talk: The European Conference on Numerical Mathematics and Advanced Applications (ENUMATH), Lausanne, Switzerland; (invited) 26.08.2013 - 30.08.2013; in "ENUMATH 2013 Proceedings", (2013), 1 - 2. BibTeX |
| 1338. | K. Rupp: "ViennaCL: GPU-accelerated Linear Algebra at the Convenience of the C++ Boost Libraries"; Talk: SIAM Conference on Computational Science and Engineering, Boston, USA; 25.02.2013 - 01.03.2013; . BibTeX |
| 1337. | F. Rudolf, K. Rupp, S. Selberherr: "ViennaMesh - a Highly Flexible Meshing Framework"; Talk: International Congress on Computational Engineering and Sciences (FEMTEC), Las Vegas, USA; 20.05.2013 - 25.05.2013; in "Abstracts 4th International Congress on Computational Engineering and Sciences", (2013), 1 page(s) . BibTeX |
| 1336. | M. Wagner, K. Rupp, J. Weinbub: "A Comparison of Algebraic Multigrid Preconditioners using Graphics Processing Units and Multi-Core Central Processing Units"; Talk: High Performance Computing Symposium (HPC), Orlando, FL, USA; 26.03.2012 - 29.03.2012; in "Proceedings of the High Performance Computing Symposium (HPC)", (2012), ISBN: 978-1-61839-788-1, 7 page(s) doi:10.5555/2338816.2338818. BibTeX |
| 1335. | J. Weinbub, K. Rupp, S. Selberherr: "A Flexible Execution Framework for High-Performance TCAD Applications"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 400 - 403. BibTeX |
| 1334. | J. Weinbub, K. Rupp, S. Selberherr: "A Generic Multi-Dimensional Run-Time Data Structure for High-Performance Scientific Computing"; Talk: World Congress on Engineering (WCE), London, UK; 04.07.2012 - 06.07.2012; in "Proceedings of the World Congress on Engineering (WCE)", (2012), ISBN: 978-988-19252-1-3, 1076 - 1081. BibTeX |
| 1333. | J. Weinbub: "A Lightweight Task Graph Scheduler for Distributed High-Performance Scientific Computing"; Talk: Workshop on the State-of-the-Art in Scientific and Parallel Computing (PARA), Helsinki, Finland; 10.06.2012 - 13.06.2012; in "Proceedings of the International Workshop on the State-of-the-Art in Scientific and Parallel Computing", (2012), 1 page(s) . BibTeX |
| 1332. | V. Palankovski, J. Kuzmik: "A Promising New n++-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications"; Talk: Honolulu PRiME 2012, Honolulu, USA; 07.10.2012 - 12.10.2012; in "ECS Meeting Abstracts", (2012), MA2012-02, 1 page(s) . BibTeX |
| 1331. | H. Mahmoudi, V. Sverdlov, S. Selberherr: "A Robust and Efficient MTJ-based Spintronic IMP Gate for New Logic Circuits and Large-Scale Integration"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 225 - 228. BibTeX |
| 1330. | A. Semenov, A. I. Dedyk, P. Y. Belavsky, Yu. V. Pavlova, S. Karmanenko, O. Pakhomov, A. Starkov, I. Starkov: "A Study of Ferroelectric Multilayer Structures Based on BST Films Containing High Concentration of Magnetic Ions"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 25.06.2012 - 27.06.2012; in "Abstract Booklet", (2012), 77. BibTeX |
| 1329. | H. Nematian, M. Moradinasab, M. Noei, M. Pourfath, M. Fathipour, H. Kosina: "A Theoretical Study of BN-Confined Graphene Nanoribbon Based Resonant Tunneling Diodes"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 217 - 218. BibTeX |
| 1328. | B. Schwarz, P. Reininger, O. Baumgartner, Z. Stanojevic, H. Kosina, G. Strasser: "A mid-infrared dual wavelenght quantum cascade structure designed for both emission and detection"; Poster: International Conference on Physics of Semiconductor (ICPS), Zürich, Schweiz; 29.07.2012 - 03.08.2012; . BibTeX |
| 1327. | Z. Stanojevic, O. Baumgartner, H. Kosina: "A stable discretization method for "Dirac-like" effective Hamiltonians"; Poster: International Quantum Cascade Lasers School & Workshop 2012 (IQCLSW 2012), Baden near Vienna, Austria; 02.09.2012 - 06.09.2012; in "Proc. International Quantum Cascade Lasers School & Workshop", (2012), 127. BibTeX |
| 1326. | H. Ceric, R. Orio, W. H. Zisser, S. Selberherr: "Ab Initio Method for Electromigration Analysis"; Talk: IEEE Electronics Packaging Technology Conference (EPTC), Singapore; 02.07.2012 - 06.07.2012; in "Proceedings of the 19th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0982-0, 4 page(s) doi:10.1109/IPFA.2012.6306306. BibTeX |
| 1325. | A. Starkov, O. Pakhomov, I. Starkov: "Account for Mutual Influence of Electrical, Elastic and Thermal Phenomena for Ferroelectric Domain Wall Modeling"; Poster: 11th International Symposium on Ferroic Domains and Micro- to Nanoscopic Structures (ISFD), Ekaterinburg, Russia; 20.08.2012 - 24.08.2012; in "Abstract Book", (2012), 238. BibTeX |
| 1324. | M. Waltl, P.-J. Wagner, H. Reisinger, K. Rott, T. Grasser: "Advanced Data Analysis Algorithms for the Time-Dependent Defect Spectroscopy of NBTI"; Talk: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 74 - 79. BibTeX |
| 1323. | T. Grasser: "Aging in CMOS Devices: From Microscopic Physics to Compact Models"; Talk: The 2012 Forum on Specification & Design Languages, Vienna, Austria; (invited) 18.09.2012 - 20.09.2012; . BibTeX |
| 1322. | Ph. Tillet, K. Rupp, S. Selberherr: "An Automatic OpenCL Compute Kernel Generator for Basic Linear Algebra Operations"; Talk: High Performance Computing Symposium (HPC), Orlando, FL, USA; 26.03.2012 - 29.03.2012; in "HPC '12 Proceedings of the 2012 Symposium on High Performance Computing", (2012), ISBN: 978-1-61839-788-1, 7 page(s) . BibTeX |
| 1321. | R. Orio, H. Ceric, S. Selberherr: "Analysis of Resistance Change Development due to Voiding in Copper Interconnects ended by a Through Silicon Via"; Talk: International Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil; 30.08.2012 - 02.09.2012; in "ECS Transactions", (2012), 1, ISBN: 978-1-56677-990-6, 273 - 280 doi:10.1149/04901.0273ecst. BibTeX |
| 1320. | I. Starkov, H. Enichlmair, S. E. Tyaginov, T. Grasser: "Analysis of the Threshold Voltage Turn-Around Effect in High-Voltage n-MOSFETs Due to Hot-Carrier Stress"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX |
| 1319. | N. Neophytou, H. Karamitaheri, H. Kosina: "Atomistic Design of Ultra-Narrow Silicon Nanowires for Improved Electronic and Thermoelectric Applications"; Talk: International Conference on Nanosciences and Nanotechnologies, Thessaloniki, Greece; 03.07.2012 - 06.07.2012; in "Abstract Book", (2012), 46. BibTeX |
| 1318. | H. Ceric, R. Orio, S. Selberherr: "Atomistic Method for Analysis of Electromigration"; Poster: IEEE International Interconnect Technology Conference (IITC), San Jose, USA; 04.06.2012 - 06.06.2012; in "Proceedings of the IEEE International Interconnect Technology Conference", (2012), ISBN: 978-1-4673-1137-3, 3 page(s) . BibTeX |
| 1317. | N. Neophytou, H. Kosina: "Atomistic Simulations of the Electronic Properties of Si and Ge Nanowires and Thin-Layers: Bandstructure Effects"; Talk: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China; (invited) 26.10.2012 - 28.10.2012; in "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), 488. BibTeX |
| 1316. | F. Schanovsky, T. Grasser: "Bias Temperature Instabilities in highly-scaled MOSFETs"; Talk: 2012 CMOS Emerging Technologies, Vancouver, BC Canada; (invited) 18.07.2012 - 21.07.2012; . BibTeX |
| 1315. | K. Rupp, C. Jungemann, M. Bina, A. Jüngel, T. Grasser: "Bipolar Spherical Harmonics Expansions of the Boltzmann Transport Equation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 19 - 22. BibTeX |
| 1314. | H. Karamitaheri, N. Neophytou, H. Kosina: "Calculations of Confined Phonon Spectrum in Narrow Si Nanowires using the Valence Force Field Method"; Poster: The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark; 09.07.2012 - 12.07.2012; in "Book of Abstracts", (2012), 1 page(s) . BibTeX |
| 1313. | M. Molnar, G. Donnarumma, V. Palankovski, J. Kuzmik, D. Donoval, J. Kovac, S. Selberherr: "Characterization, Modeling and Simulation of In0.12Al0.88N/GaN HEMTs"; Talk: Applied Physics of Condensed Matter (APCOM), High Tatras, Slovakia; 20.06.2012 - 22.06.2012; in "Proceedings of the 18th International Conference in the Series of the Solid State Workshops", (2012), 190 - 194. BibTeX |
| 1312. | I. Starkov, H. Enichlmair, S. E. Tyaginov, T. Grasser: "Charge-Pumping Extraction Techniques for Hot-Carrier Induced Interface and Oxide Trap Spatial Distributions in MOSFETs"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 02.07.2012 - 06.07.2012; in "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6, 1 - 6 doi:10.1109/IPFA.2012.6306266. BibTeX |
| 1311. | M. Toledano-Luque, B. Kaczer, E. Simoen, R. Degraeve, J. Franco, Ph. J. Roussel, T. Grasser, G. Groeseneken: "Correlation of Single Trapping and Detrapping Effects in Drain and Gate Currents of Nanoscaled nFETs and pFETs"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX |
| 1310. | V. Palankovski, J. Kuzmik: "Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation"; Talk: Honolulu PRiME 2012, Honolulu, USA; 07.10.2012 - 12.10.2012; in "ECS Meeting Abstracts", (2012), MA2012-02, 1 page(s) . BibTeX |
| 1309. | J. Weinbub: "Distributed High-Performance Parallel Mesh Generation with ViennaMesh"; Talk: Workshop on the State-of-the-Art in Scientific and Parallel Computing (PARA), Helsinki, Finland; 10.06.2012 - 13.06.2012; in "Proceedings of the International Workshop on the State-of-the-Art in Scientific and Parallel Computing", (2012), 1 page(s) . BibTeX |
| 1308. | A. Starkov, I. Starkov: "Domain-Wall Motion for Slowly Varying Electric Field"; Talk: 11th International Symposium on Ferroic Domains and Micro- to Nanoscopic Structures (ISFD), Ekaterinburg, Russia; 20.08.2012 - 24.08.2012; in "Abstract Book", (2012), 93. BibTeX |
| 1307. | B. Schwarz, P. Reininger, O. Baumgartner, Z. Stanojevic, H. Kosina, G. Strasser: "Dual wavelength quantum cascade structure that can act both as laser and detector"; Talk: MIRTHE-IROn-SensorCAT virtual conference 2012, Princeton; 26.06.2012 - 27.06.2012; . BibTeX |
| 1306. | B. Schwarz, P. Reininger, O. Baumgartner, Z. Stanojevic, H. Kosina, G. Strasser: "Dual-color quantum cascade structure for coherent emission and detection"; Poster: International Quantum Cascade Lasers School & Workshop 2012 (IQCLSW 2012), Baden; 02.09.2012 - 06.09.2012; . BibTeX |
| 1305. | M. Moradinasab, H. Nematian, M. Noei, M. Pourfath, M. Fathipour, H. Kosina: "Edge Roughness Effects on the Optical Properties of Zigzag Graphene Nanoribbons: A First Principles Study"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 249 - 250. BibTeX |
| 1304. | Z. Stanojevic, H. Kosina: "Efficient Numerical Analysis of Dielectric Cavities"; Talk: European Semiconductor Laser Workshop (ESLW), Brussels, Belgium; 21.09.2012 - 22.09.2012; . BibTeX |
| 1303. | L. Filipovic, S. Selberherr: "Electric Field Based Simulations of Local Oxidation Nanolithography using Atomic Force Microscopy in a Level Set Environment"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil; 30.08.2012 - 02.09.2012; in "ECS Transactions", (2012), 1, ISBN: 978-1-56677-990-6, 265 - 272 doi:10.1149/04901.0265ecst. BibTeX |
| 1302. | D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr: "Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors"; Talk: 24th European Modeling and Simulation Symposium (EMSS2012), Vienna, Austria; 19.09.2012 - 21.09.2012; in "Proceedings of the 24th European Modeling and Simulation Symposium", (2012), ISBN: 978-88-97999-01-0, 156 - 162. BibTeX |
| 1301. | D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr: "Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 153 - 156. BibTeX |
| 1300. | R. Orio, H. Ceric, S. Selberherr: "Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via"; Poster: 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Cagliari, Italy; 01.10.2012 - 05.10.2012; in "Proceedings of the 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2012), 1981 - 1986. BibTeX |
| 1299. | M. Molnar, G. Donnarumma, V. Palankovski, J. Kuzmik, D. Donoval, J. Kovac, S. Selberherr: "Electrothermal Analysis of In0.12Al0.88N/GaN HEMTs"; Talk: International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), Smolenice, Slovakia; 11.11.2012 - 15.11.2012; in "Proceedings of the 9th International ASDAM", (2012), ISBN: 978-1-4673-1195-3, 55 - 58 doi:10.1109/ASDAM.2012.6418556. BibTeX |
| 1298. | A. Makarov, S. Selberherr, V. Sverdlov: "Emerging Non-Volatile Memories for Ultra-Low Power Applications"; Talk: Informationstagung Mikroelektronik (ME), Vienna, Austria; (invited) 23.04.2012 - 24.04.2012; in "Tagungsband zur Informationstagung Mikroelektronik 12", (2012), ISBN: 978-3-85133-071-7, 21 - 24. BibTeX |
| 1297. | H. Karamitaheri, N. Neophytou, M. Pourfath, H. Kosina: "Engineering the Thermoelectric Power Factor of Metallic Graphene Nanoribbons"; Talk: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 77 - 78. BibTeX |
| 1296. | N. Neophytou, H. Karamitaheri, H. Kosina: "Engineering the Thermoelectric Power Factor of Si and Ge Ultra Narrow 1D Nanowires and 2D Thin Layers Using Atomistic Modeling"; Talk: The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark; 09.07.2012 - 12.07.2012; in "Book of Abstracts", (2012), 1 page(s) . BibTeX |
| 1295. | T. Aichinger, P. Lenahan, T. Grasser, G. Pobegen, M. Nelhiebel: "Evidence for Pb Center-Hydrogen Complexes after Subjecting PMOS Devices to NBTI Stress - a Combined DCIV/SDR Study"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX |
| 1294. | V. Sverdlov, A. Makarov, S. Selberherr: "Fast Switching in MTJs with a Composite Free Layer"; Talk: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China; 26.10.2012 - 28.10.2012; in "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), 291. BibTeX |
| 1293. | R. Orio, S. Selberherr: "Formation and Movement of Voids in Copper Interconnect Structures"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Xi'an, China; (invited) 29.10.2012 - 01.11.2012; in "Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2012), ISBN: 978-1-4673-2475-5, 378 - 381 doi:10.1109/ICSICT.2012.6467675. BibTeX |
| 1292. | T. Windbacher, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr: "Fully Electrically Read- Write Magneto Logic Gates"; Talk: The 5th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMS, Crete, Greece; 07.10.2012 - 10.10.2012; in "Book of Abstracts", (2012), 1 page(s) . BibTeX |
| 1291. | M. Jurkovic, D. Gregusova, S. Hascik, M. Blaho, M. Molnar, V. Palankovski, D. Donoval, J. Carlin, N. Grandjean, J. Kuzmik: "GaN/InAlN/AlN/GaN Normally-Off HEMT with Etched Access Region"; Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France; 30.05.2012 - 01.06.2012; in "Proceedings of the 36th Workshop on Compound Semiconductor Devices and Integrated Circuits", (2012), 2 page(s) . BibTeX |
| 1290. | N. Neophytou, H. Kosina: "Gate Field Induced Bandstructure and Mobility Variations in p-type Silicon Nanowires"; Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Montpellier, France; 23.01.2012 - 25.01.2012; in "Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2012), 131 - 132. BibTeX |
| 1289. | A. Makarov, V. Sverdlov, S. Selberherr: "Geometry Dependence of the Switching Time in MTJs with a Composite Free Layer"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona; (invited) 02.12.2012 - 07.12.2012; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2012), ISBN: 978-3-901578-25-0, 21. BibTeX |
| 1288. | S. Selberherr: "Giving Silicon a Spin"; Talk: International Conference on Enabling Science and Nanotechnology, Johor Bahru, Malaysia; (invited) 05.01.2012 - 07.01.2012; in "Abstracts International Conference on Enabling Science and Nanotechnology (ESciNano 2012)", (2012), 1 page(s) . BibTeX |
| 1287. | A. Makarov, V. Sverdlov, S. Selberherr: "High Thermal Stability and Low Switching Energy Barrier in Spin-transfer Torque RAM with Composite Free Layer"; Poster: International Conference on Solid State Devices and Materials, Kyoto, Japan; 25.09.2012 - 27.09.2012; in "Extended Abstracts of 2012 International Conference on Solid State Devices and Materials", (2012), 2 page(s) . BibTeX |
| 1286. | K. Rupp, J. Weinbub, F. Rudolf: "Highly Productive Application Development with ViennaCL for Accelerators"; Poster: AGU Fall Meeting, San Francisco, USA; (invited) 03.12.2012 - 07.12.2012; . BibTeX |
| 1285. | H. Karamitaheri, M. Pourfath, H. Kosina: "Highly Sensitive Graphene Antidot Lattice Chemiresitor Sensor"; Poster: Graphene Week, Delft, Netherlands; 04.06.2012 - 08.06.2012; in "Book of Abstracts", (2012), 1 page(s) . BibTeX |
| 1284. | K. Rott, D. Schmitt-Landsiedel, H. Reisinger, G.A. Rott, G. Georgakos, C. Schluender, S. Aresu, W. Gustin, T. Grasser: "Impact and measurement of short term threshold instabilities in MOSFETs of analog circuits"; Talk: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 31 - 34. BibTeX |
| 1283. | S. E. Tyaginov, I. Starkov, O. Triebl, M. Karner, C. Kernstock, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser: "Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 02.07.2012 - 06.07.2012; in "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6, 1 - 5 doi:10.1109/IPFA.2012.6306265. BibTeX |
| 1282. | J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, J. Mitard, L. Ragnarsson, L. Witters, T. Chiarella, M. Togo, N. Horiguchi, G. Groeseneken, M. F. Bukhori, T. Grasser, A. Asenov: "Impact of Single Charged Gate Oxide Defects on the Performance and Scaling of Nanoscaled FETs"; Talk: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX |
| 1281. | K. Rupp, P. Lagger, T. Grasser: "Inclusion of Carrier-Carrier-Scattering Into Arbitrary-Order Spherical Harmonics Expansions of the Boltzmann Transport Equation"; Talk: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 109 - 110. BibTeX |
| 1280. | G. Donnarumma, V. Palankovski, S. Selberherr: "Influence of Bandgap Narrowing and Carrier Lifetimes on the Forward Current-Voltage Characteristics of a 4H-SiC p-i-n Diode"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 125 - 128. BibTeX |
| 1279. | H. Mahmoudi, V. Sverdlov, S. Selberherr: "Influence of Geometry on Memristive Behavior of the Domain Wall Spintronic Memristors and its Applications for Measurements"; Poster: International Conference on Superconductivity and Magnetism, Istanbul, Turkey; 29.04.2012 - 04.05.2012; in "Proceedings of International Conference on Superconductivity and Magnetism (ICSM 2012)", (2012), 1 page(s) . BibTeX |
| 1278. | A. Axelevitch, V. Palankovski, S. Selberherr, G. Golan: "Large Silicon Solar Cells of a Lateral Type"; Poster: 2nd International Conference on Crystalline Silicon Photovoltaics (Silicon PV 2012), Leuven, Belgium; 03.04.2012 - 05.04.2012; . BibTeX |
| 1277. | I. Starkov, H. Enichlmair, T. Grasser: "Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in High-Voltage n-MOSFET"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 25.06.2012 - 27.06.2012; in "Abstract Booklet", (2012), 40. BibTeX |
| 1276. | H. Kosina, N. Neophytou: "Low Dimensional Nanostructures as Efficient Thermoelectric Materials for Energy Conversion and Generation"; Talk: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China; (invited) 26.10.2012 - 28.10.2012; in "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), 419. BibTeX |
| 1275. | N. Neophytou: "Low Dimensional Si Nanostructures for Efficient Thermoelectric Energy Conversion and Generation"; Talk: Workshop on Nanostructured Materials & Devices (NANOMED), Nicosia, Cyprus; (invited) 17.10.2012. BibTeX |
| 1274. | V. Sverdlov, S. Selberherr: "MOSFET and Spin Transistor Simulations"; Talk: 2012 CMOS Emerging Technologies, Vancouver, BC Canada; (invited) 18.07.2012 - 21.07.2012; in "Abstract of 2012 CMOS Emerging Technologies", (2012), 1 page(s) . BibTeX |
| 1273. | H. Mahmoudi, V. Sverdlov, S. Selberherr: "MTJ-based Implication Logic Gates and Circuit Architecture for Large-Scale Spintronic Stateful Logic Systems"; Talk: European Solid-State Device Research Conference (ESSDERC), Bordeaux, France; 17.09.2012 - 21.09.2012; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2012), ISBN: 978-1-4673-3086-2, 254 - 257 doi:10.1109/ESSDERC.2012.6343381. BibTeX |
| 1272. | A. Makarov, V. Sverdlov, S. Selberherr: "Micromagnetic Simulations of an MTJ with a Composite Free Layer for High-Speed Spin Transfer Torque RAM"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 225 - 226. BibTeX |
| 1271. | A. Makarov, V. Sverdlov, S. Selberherr: "Modeling Emerging Non-Volatile Memories: Current Trends and Challenges"; Talk: International Conference on Solid State Devices and Materials Science (SSDMS), Macao, China; 01.04.2012 - 02.04.2012; in "Physics Procedia", (2012), 99 - 104 doi:10.1016/j.phpro.2012.03.056. BibTeX |
| 1270. | D. Osintsev, V. Sverdlov, S. Selberherr: "Modeling Spintronic Effects in Silicon"; Talk: International Workshop on Mathematics for Semiconductor Heterostructures (MSH), Berlin, Germany; (invited) 24.09.2012 - 28.09.2012; in "Abstracts International Workshop on Mathematics for Semiconductor Heterostructures (MSH)", (2012), 3 page(s) . BibTeX |
| 1269. | R. Orio, H. Ceric, S. Selberherr: "Modeling of Electromigration Induced Resistance Change in Three-Dimensional Interconnects with Through Silicon Vias"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 268 - 271. BibTeX |
| 1268. | M. Bina, K. Rupp, S. E. Tyaginov, O. Triebl, T. Grasser: "Modeling of Hot Carrier Degradation Using a Spherical Harmonics Expansion of the Bipolar Boltzmann Transport Equation"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 10.12.2012 - 12.12.2012; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2012), 713 - 716 doi:10.1109/IEDM.2012.6479138. BibTeX |
| 1267. | S. E. Tyaginov, T. Grasser: "Modeling of Hot-Carrier Degradation: Physics and Controversial Issues"; Talk: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 206 - 215. BibTeX |
| 1266. | H. Ceric, R. Orio, W. H. Zisser, V. Schnitzer, S. Selberherr: "Modeling of Microstructural Effects on Electromigration Failure"; Talk: International Workshop on Stress-Induced Phenomena in Microelectronics, Kyoto, Japan; (invited) 28.05.2012 - 30.05.2012; in "Abstracts of 12th International Workshop on Stress-Induced Phenomena in Microelectronics", (2012), 50 - 51. BibTeX |
| 1265. | T. Grasser, B. Kaczer, H. Reisinger, P.-J. Wagner, M. Toledano-Luque: "Modeling of the bias temperature instability under dynamic stress and recovery conditions"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Xi'an, China; (invited) 29.10.2012 - 01.11.2012; in "11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2012), ISBN: 978-1-4673-2474-8, 1 - 4 doi:10.1109/ICSICT.2012.6466737. BibTeX |
| 1264. | X. Zianni, N. Neophytou, M. Ferri, A. Roncaglia, D. Narducci: "Nanograin Effects on the Thermoelectric Properties of Poly-Si Nanowiress"; Talk: The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark; 09.07.2012 - 12.07.2012; in "Book of Abstracts", (2012), 1 page(s) . BibTeX |
| 1263. | A. Makarov, V. Sverdlov, S. Selberherr: "New Trends in Microelectronics: Towards an Ultimate Memory Concept"; Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen, Mexico; (invited) 14.03.2012 - 17.03.2012; in "Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems", (2012), ISBN:978-1-4566-1117-6, 2 page(s) doi:10.1109/ICCDCS.2012.6188887. BibTeX |
| 1262. | I. Serrano-Lopez, A. Garcia-Barrientos, V. Palankovski, L. del Carmen Cruz-Netro: "Non-Stationary Effects of Space Charge in InN Films"; Talk: International Materials Research Congress, Cancun, Mexico; 12.08.2012 - 17.08.2012; in "XXI International Materials Research Congress", (2012), 1 page(s) . BibTeX |
| 1261. | H. Mahmoudi, V. Sverdlov, S. Selberherr: "Novel Memristive Charge- and Flux-Based Sensors"; Talk: The 8th Conference on Ph.D. Research in Microelectronics & Electronics- PRIME 2012, Aachen, Germany; 12.06.2012 - 15.06.2012; in "Proceedings of the 8th Conference on Ph.D. Research in Microelectronics & Electronics", (2012), ISBN: 978-3-8007-3442-9, 4 page(s) . BibTeX |
| 1260. | P.-J. Wagner, B. Kaczer, A. Scholten, H. Reisinger, S. Bychikhin, D. Pogany, L.K.J. Vandamme, T. Grasser: "On the Correlation Between NBTI, SILC, and Flicker Noise"; Talk: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 60 - 64. BibTeX |
| 1259. | T. Grasser, B. Kaczer, H. Reisinger, P.-J. Wagner, M. Toledano-Luque: "On the Frequency Dependence of the Bias Temperature Instability"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX |
| 1258. | F. Schanovsky, T. Grasser: "On the Microscopic Limit of the Modified Reaction-Diffusion Model for the Negative Bias Temperature Instability"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX |
| 1257. | T. Grasser, H. Reisinger, K. Rott, M. Toledano-Luque, B. Kaczer: "On the Microscopic Origin of the Frequency Dependence of Hole Trapping in pMOSFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 10.12.2012 - 12.12.2012; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2012), 470 - 473 doi:10.1109/IEDM.2012.6479076. BibTeX |
| 1256. | M. Moradinasab, H. Karamitaheri, M. Pourfath, H. Kosina: "On the Role of Stone-Wales Defects on the Performance of Graphene Nanoribbon Photo Detectors"; Poster: Graphene Week, Delft, Netherlands; 04.06.2012 - 08.06.2012; in "Book of Abstracts", (2012), 1 page(s) . BibTeX |
| 1255. | B. Schwarz, P. Reininger, O. Baumgartner, Z. Stanojevic, H. Kosina, G. Strasser: "Optimization of intersubband devices for dual-color emission, absorption and detection"; Talk: ÖPG-Jahrestagung, Graz; 18.09.2012 - 21.09.2012; . BibTeX |
| 1254. | P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov: "Particle-Grid Techniques for Semiclassical and Quantum Transport Simulations"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 177 - 178. BibTeX |
| 1253. | M. Nedjalkov, P. Schwaha, S. Selberherr, D.K. Ferry: "Phonon Decoherence in Wigner-Boltzmann Transport"; Poster: International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 12.02.2012 - 17.02.2012; in "Proceedings of International Winterschool on New Developments in Solid State Physics", (2012), 61 - 62. BibTeX |
| 1252. | V. Palankovski: "Photovoltaic and Thermoelectric Devices for Renewable Energy Harnessing"; Talk: Electronica, Sofia, Bulgaria; (invited) 14.06.2012 - 15.06.2012; . BibTeX |
| 1251. | M. Jurkovic, D. Gregusova, S. Hascik, M. Blaho, K. Cico, V. Palankovski, J. Carlin, N. Grandjean, J. Kuzmik: "Polarization Engineered Normally-Off GaN/InlN/AlN/GaN HEMT"; Talk: International Workshop on Nitride Semiconductors 2012 (INW), Sapporo, Japan; 14.10.2012 - 19.10.2012; in "International Workshop on Nitride Semiconductors", (2012), 2 page(s) . BibTeX |
| 1250. | A. Starkov, I. Baranov, O. Pakhomov, I. Starkov, A. Zaitsev: "Principles of Solid-State Cooler on Layered Multiferroics"; Poster: 5th IIR/IIF International Conference on Magnetic Refrigeration at Room Temperature (THERMAG V), Grenoble, France; 17.09.2012 - 20.09.2012; in "Conference guide & book of abstracts", (2012), 1 page(s) . BibTeX |
| 1249. | A. Makarov, V. Sverdlov, S. Selberherr: "Recent Developments in Advanced Memory Modeling"; Talk: International Conference on Microelectronics (MIEL), Nis, Serbia; (invited) 13.05.2012 - 16.05.2012; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2012), ISBN: 978-1-4673-0235-7, 49 - 52 doi:10.1109/MIEL.2012.6222795. BibTeX |
| 1248. | S. Selberherr: "Recent Developments in Advanced Memory Modeling"; Talk: IEEE EDS Mini-Colloquium Distinguished Lecture, University of Nis, Nis, Serbia; (invited) 13.05.2012. BibTeX |
| 1247. | T. Grasser: "Recent Developments in Understanding the Bias Temperature Instability"; Talk: International Conference on Microelectronics (MIEL), Nis, Serbia; (invited) 13.05.2012 - 16.05.2012; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2012), ISBN: 978-1-4673-0238-8, 315 - 322 doi:10.1109/MIEL.2012.6222864. BibTeX |
| 1246. | G. Pobegen, M. Nelhiebel, T. Grasser: "Recent Results Concerning the Influence of Hydrogen on the Bias Temperature Instability"; Talk: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in "2012 IEEE International Integrated Reliability Workshop Final Report", (2012), 54 - 59. BibTeX |
| 1245. | K. Rupp, T. Grasser, A. Jüngel: "Recent advances in the spherical harmonics expansion of the Boltzmann transport equation"; Talk: Congresso Nationale Simai 2012, Turin, Italy; 25.06.2012 - 28.06.2012; in "Abstracts of Congresso Nationale Simai 2012", (2012), 183. BibTeX |
| 1244. | D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr: "Reduction of Surface Roughness Induced Spin Relaxation in MOSFETs by Strain"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 229 - 230. BibTeX |
| 1243. | A. Makarov, V. Sverdlov, S. Selberherr: "Reduction of the Switching Current in Spin Transfer Torque Random Access Memory"; Poster: Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents, Corsica, France; 25.06.2012 - 29.06.2012; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents", (2012), 49. BibTeX |
| 1242. | J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, G. Eneman, Ph. J. Roussel, M. Cho, T. Kauerauf, T. Grasser, L. Witters, G. Hellings, L. Ragnarsson, N. Horiguchi, M. Heyns, G. Groeseneken: "Reliability of SiGe Channel MOS"; Talk: Honolulu PRiME 2012, Honolulu, USA; 07.10.2012 - 12.10.2012; in "ECS Meeting Abstracts", (2012), MA2012-02, 1 page(s) . BibTeX |
| 1241. | M. Nedjalkov, P. Schwaha, S. Selberherr, D.K. Ferry, D. Vasileska, P. Dollfus, D. Querlioz: "Role of the Physical Scales on the Transport Regime"; Talk: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 47 - 48. BibTeX |
| 1240. | A. Makarov, V. Sverdlov, S. Selberherr: "STT-RAM with a Composite Free Layer: High Thermal Stability, Low Switching Barrier, and Sharp Switching Time Distribution"; Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 23.07.2012 - 25.07.2012; in "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), H4. BibTeX |
| 1239. | P. Reininger, B. Schwarz, O. Baumgartner, Z. Stanojevic, H. Kosina, G. Strasser: "Simulation of Dual Wavelength Photonic Crystal Quantum Cascade Laser"; Poster: International Conference on Physics of Semiconductor (ICPS), Zürich, Schweiz; 29.07.2012 - 03.08.2012; . BibTeX |
| 1238. | M. Bina, O. Triebl, B. Schwarz, M. Karner, B. Kaczer, T. Grasser: "Simulation of Reliability on Nanoscale Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 109 - 112. BibTeX |
| 1237. | L. Filipovic, S. Selberherr: "Simulation of Silicon Nanopatterning Using nc-AFM"; Poster: International Conference on non-contact Atomic Force Microscopy, Cesky Krumlov; 01.07.2012 - 05.07.2012; in "Abstracts 15th International Conference on non-contact Atomic Force Microscopy (nc-AFM)", (2012), 108. BibTeX |
| 1236. | P. Reininger, B. Schwarz, S. Kalchmair, R. Gansch, O. Baumgartner, Z. Stanojevic, H. Kosina, W. Schrenk, G. Strasser: "Simulation of a dual wavelength quantum cascade laser in a photonic crystal cavity"; Poster: International Quantum Cascade Lasers School & Workshop 2012 (IQCLSW 2012), Baden; 02.09.2012 - 06.09.2012; . BibTeX |
| 1235. | L. Filipovic, S. Selberherr: "Simulations of Local Oxidation Nanolithography by AFM Based on the Generated Electric Field"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 189 - 192. BibTeX |
| 1234. | T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Simulations of an Electrical Read-Write Operation of a Magnetic XOR Gate"; Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 23.07.2012 - 25.07.2012; in "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), J3. BibTeX |
| 1233. | M. Lukash, K. Rupp, S. Selberherr: "Sparse Approximate Inverse Preconditioners for Iterative Solvers on GPUs"; Talk: High Performance Computing Symposium (HPC), Orlando, FL, USA; 26.03.2012 - 29.03.2012; in "HPC '12 Proceedings of the 2012 Symposium on High Performance Computing", (2012), ISBN: 978-1-61839-788-1, 7 page(s) . BibTeX |
| 1232. | H. Mahmoudi, V. Sverdlov, S. Selberherr: "Spintronic Stateful Logic Gates using Magnetic Tunnel Junctions Written by Spin-Transfer Torque"; Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 05.08.2012 - 08.08.2012; in "Book of Abstracts", (2012), P-6. BibTeX |
| 1231. | H. Mahmoudi, V. Sverdlov, S. Selberherr: "State Drift Optimization of Memristive Stateful IMP Logic Gates"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 243 - 244. BibTeX |
| 1230. | D. Osintsev, Z. Stanojevic, O. Baumgartner, V. Sverdlov, S. Selberherr: "Strain-Induced Reduction of Surface Roughness Dominated Spin Relaxation in MOSFETs"; Poster: International Conference on Physics of Semiconductor (ICPS), Zurich, Switzerland; 29.07.2012 - 03.08.2012; in "31st International Conference on the Physics of Semiconductors (ICPS 2012)", (2012), 1566, ISBN: 978-0-7354-1194-4, 1 page(s) doi:10.1063/1.4848413. BibTeX |
| 1229. | A. Makarov, V. Sverdlov, S. Selberherr: "Study of Self-Accelerating Switching in MTJs with Composite Free Layer by Micromagnetic Simulations"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 229 - 232. BibTeX |
| 1228. | J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, F. Crupi, G. Eneman, Ph. J. Roussel, T. Grasser, M. Cho, T. Kauerauf, L. Witters, G. Hellings, L. Ragnarsson, N. Horiguchi, M. Heyns, G. Groeseneken: "Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications"; Talk: IEEE International Conference on IC Design and Technology (ICICDT), Austin, TX, USA; (invited) 30.05.2012 - 01.06.2012; in "Proceedings of IEEE International Conference on IC Design and Technology", (2012), 1 - 4. BibTeX |
| 1227. | D. Osintsev, V. Sverdlov, S. Selberherr: "Surface Roughness Induced Reduction of Spin Relaxation in Thin Silicon Films"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona; (invited) 02.12.2012 - 07.12.2012; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)S)", (2012), ISBN: 978-3-901578-25-0, 33. BibTeX |
| 1226. | D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr: "Surface Roughness Induced Spin Scattering and Relaxation in Silicon SOI MOSFETs"; Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 23.07.2012 - 25.07.2012; in "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), B3. BibTeX |
| 1225. | V. Sverdlov, A. Makarov, S. Selberherr: "Switching Energy Barrier and Current Reduction in MTJs with Composite Free Layer"; Talk: APS March Meeting, Boston, USA; 27.02.2012 - 02.03.2012; in "Bulletin American Physical Society (APS March Meeting 2012)", (2012), 1 page(s) . BibTeX |
| 1224. | J. Cervenka, A. Steinmair, J.M. Park, E. Seebacher, T. Grasser: "TCAD Simulations of Statistical Process Variations for High-Voltage LDMOS Transistors"; Talk: European Workshop on CMOS Variability, Nice, France; 11.06.2012 - 12.06.2012; in "Proceedings of the 3rd European Workshop on CMOS Variability", (2012), ISBN: 978-2-914561-56-3, 4 page(s) . BibTeX |
| 1223. | H. Ceric, R. Orio, S. Selberherr: "TCAD Study of Electromigration Failure Modes in Sn-Based Solder Bumps"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 264 - 267. BibTeX |
| 1222. | K. Rupp: "The High-Level Linear Algebra Library ViennaCL and Its Applications"; Talk: GPU Technology Conference, San Jose, California, USA; 14.05.2012 - 17.05.2012; in "Abstracts of GPU Technology Conference", (2012), 77. BibTeX |
| 1221. | A. I. Dedyk, Yu. V. Pavlova, A. Semenov, O. Pakhomov, A. Starkov, I. Starkov, P. Yu. Beliavskiy: "The Influence of "Heating-Cooling" Process Rate on Temperature Hysteresis of Ferroelectric Capasitor Structures"; Poster: 21st International Symposium on Applications of Ferroelectrics (ISAF), Aveiro, Portugal; 09.07.2012 - 13.07.2012; in "Proceedings of 21st International Symposium on Applications of Ferroelectrics (ISAF)", (2012), ISBN: 978-1-4673-2668-1, 1 page(s) doi:10.1109/ISAF.2012.6297838. BibTeX |
| 1220. | B. Kaczer, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. F. Bukhori, A. Asenov, B. Schwarz, M. Bina, T. Grasser, G. Groeseneken: "The Relevance of Deeply-Scaled FET Threshold Voltage Shifts for Operation Lifetimes"; Talk: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX |
| 1219. | A. Starkov, I. Starkov: "Theoretical Model of SPM-tip Electrostatic Field Accounting for Dead Layer and Domain Wall"; Talk: 21st International Symposium on Applications of Ferroelectrics (ISAF), Aveiro, Portugal; 09.07.2012 - 13.07.2012; in "Proceedings of 21st International Symposium on Applications of Ferroelectrics (ISAF)", (2012), ISBN: 978-1-4673-2668-1, 1 page(s) doi:10.1109/ISAF.2012.6297837. BibTeX |
| 1218. | M. Moradinasab, H. Nematian, M. Pourfath, M. Fathipour, H. Kosina: "Theoretical Study of Single and Bilayer Graphene Nanoribbons Photodetectors"; Talk: Meeting of the Electrochemical Society (ECS), Seattle, Washington, USA; 06.05.2012 - 10.05.2012; in "ECS Meeting", (2012), 1 page(s) . BibTeX |
| 1217. | H. Karamitaheri, M. Pourfath, N. Neophytou, H. Kosina: "Theoretical Study of a Zigzag Graphene Nanoribbon Field Effect Transistor"; Talk: Meeting of the Electrochemical Society (ECS), Honolulu, USA; 07.10.2012 - 12.10.2012; in "ECS Meeting", (2012), 1 page(s) . BibTeX |
| 1216. | A. P. Singulani, H. Ceric, S. Selberherr: "Thermo-mechanical Simulations of an Open Tungsten TSV"; Talk: IEEE Electronics Packaging Technology Conference (EPTC), Singapore; 05.12.2012 - 07.12.2012; in "Proceedings of the IEEE 14th Electronics Packaging Technology Conference (EPTC)", (2012), ISBN: 978-1-4673-4551-4, 110 - 114 doi:10.1109/EPTC.2012.6507061. BibTeX |
| 1215. | A. Starkov, O. Pakhomov, I. Starkov: "Thermodynamic Foundations of Solid-State Cooler Based on Multiferroic Materials"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 25.06.2012 - 27.06.2012; in "Abstract Booklet", (2012), 76. BibTeX |
| 1214. | N. Neophytou, H. Kosina: "Thermoelectric Power Factor of Ultra-Narrow Silicon Nanowires"; Talk: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; (invited) 22.05.2012 - 25.05.2012; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 67 - 68. BibTeX |
| 1213. | N. Neophytou, H. Kosina: "Thermoelectric Properties of Low-Dimensional Si and Ge Based Nanostructures"; Talk: APS March Meeting, Boston, USA; 27.02.2012 - 02.03.2012; in "Bulletin American Physical Society (APS March Meeting 2012)", (2012), 1 page(s) . BibTeX |
| 1212. | J. Weinbub, K. Rupp, L. Filipovic, A. Makarov, S. Selberherr: "Towards a Free Open Source Process and Device Simulation Framework"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 141 - 142. BibTeX |
| 1211. | S. Selberherr: "Transport Modeling for Nanoscale Semiconductor Devices"; Talk: IEEE EDS Mini-Colloquium Distinguished Lecture, Hotel City Express, Playa del Carmen, Mexico; (invited) 13.03.2012. BibTeX |
| 1210. | D. Osintsev, V. Sverdlov, S. Selberherr: "Using Strain for the Reduction of Surface Roughness Induced Spin Relaxation in Field-Effect Transistors with Thin Silicon Body"; Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Montpellier, France; 23.01.2012 - 25.01.2012; in "Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2012), 77 - 78. BibTeX |
| 1209. | J. Weinbub, K. Rupp, S. Selberherr: "Utilizing Modern Programming Techniques and the Boost Libraries for Scientific Software Development"; Talk: C++Now, Aspen, CO, USA; 13.05.2012 - 18.05.2012; in "Proceedings of C++Now (2012)", (2012), 10 page(s) . BibTeX |
| 1208. | D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr: "Valley Splitting and Spin Relaxation in Strained Silicon Quantum Wells"; Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 05.08.2012 - 08.08.2012; in "Book of Abstracts", (2012), P-27. BibTeX |
| 1207. | R. Orio, H. Ceric, S. Selberherr: "A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects"; Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 03.10.2011 - 07.10.2011; . BibTeX |
| 1206. | R. Orio, H. Ceric, S. Selberherr: "A Compact Model for Early Electromigration Lifetime Estimation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 23 - 26 doi:10.1109/SISPAD.2011.6035040. BibTeX |
| 1205. | N. Manavizadeh, M. Pourfath, F. Raissi, E. Asl-Soleimani: "A Comprehensive Study of Nanoscale Field Effect Diodes"; Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria; 18.04.2011 - 20.04.2011; in "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", (2011), ISBN: 978-1-4577-0105-4, 4 page(s) doi:10.1109/ESIME.2011.5765817. BibTeX |
| 1204. | K. Rupp, A. Jüngel, T. Grasser: "A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors"; Talk: Facing the Multicore Challenge II, Karlsruhe, Germany; 28.09.2011 - 30.09.2011; in "Proceedings of Facing the Multicore Challenge II", (2011), 11 page(s) . BibTeX |
| 1203. | J. Weinbub, J. Cervenka, K. Rupp, S. Selberherr: "A Generic High-Quality Meshing Framework"; Talk: Symposium on Trends in Unstructured Mesh Generation (Meshtrends), Minneapolis, USA; 25.07.2011 - 28.07.2011; in "Proceedings of the 11th US National Congress on Computational Mechanics (USNCCM)", (2011), 1 page(s) . BibTeX |
| 1202. | L. Filipovic, S. Selberherr: "A Level Set Simulator for Nanooxidation using Non-Contact Atomic Force Microscopy"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 307 - 310 doi:10.1109/SISPAD.2011.6035031. BibTeX |
| 1201. | L. Filipovic, M. Nedjalkov, S. Selberherr: "A Monte Carlo Simulator for Non-Contact Atomic Force Microscopy"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2011 - 10.06.2011; in "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), 42 - 43. BibTeX |
| 1200. | L. Filipovic, H. Ceric, J. Cervenka, S. Selberherr: "A Simulator for Local Anodic Oxidation of Silicon Surfaces"; Talk: IEEE Canadian Conference on Electrical and Computer Engineering (CCECE), Niagara Falls, Canada; 08.05.2011 - 11.05.2011; in "Proceedings of the 24th Canadian Conference on Electrical and Computer Engineering (CCECE 2011)", (2011), ISBN: 978-1-4244-9789-8, 695 - 698 doi:10.1109/CCECE.2011.6030543. BibTeX |
| 1199. | L. Filipovic, S. Selberherr: "A Two-Dimensional Lorentzian Distribution for an Atomic Force Microscopy Simulator"; Talk: Seminar on Monte Carlo Methods (MCM), Borovets; 29.08.2011 - 02.09.2011; in "Abstracts IMACS Seminar on Monte Carlo Methods (MCM)", (2011), 30. BibTeX |
| 1198. | Z. Stanojevic, M. Karner, K. Schnass, Ch. Kernstock, O. Baumgartner, H. Kosina: "A Versatile Finite Volume Simulator for the Analysis of Electronic Properties of Nanostructures"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 143 - 146 doi:10.1109/SISPAD.2011.6035089. BibTeX |
| 1197. | A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "About the Switching Process in Magnetic Tunnel Junctions with Two Fixed Layers and One Soft Magnetic Layer"; Poster: Soft Magnetic Materials Conference (SMM), Kos, Greece; 18.09.2011 - 22.09.2011; in "Abstracts Book of The 20th International Conference on Soft Magnetic Materials", (2011), ISBN: 978-960-9534-14-7, 444. BibTeX |
| 1196. | I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping Measurements"; Talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; 25.09.2011 - 30.09.2011; in "GADEST 2011: Abstract Booklet", (2011), 105 - 106. BibTeX |
| 1195. | K. Rupp, T. Grasser, A. Jüngel: "Adaptive Variable-Order Spherical Harmonics Expansion of the Boltzmann Transport Equation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 151 - 155 doi:10.1109/SISPAD.2011.6034964. BibTeX |
| 1194. | W. Gös, F. Schanovsky, T. Grasser, H. Reisinger, B. Kaczer: "Advanced Modeling of Oxide Defects for Random Telegraph Noise"; Talk: International Conference on Noise and Fluctuations (ICNF), Toronto, Canada; 12.06.2011 - 16.06.2011; in "Proceedings of the 21st International Conference on Noise and Fluctuations", (2011), 4 page(s) . BibTeX |
| 1193. | S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser: "An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation"; Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 03.10.2011 - 07.10.2011; in "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2011), 51, 1525 - 1529. BibTeX |
| 1192. | I. Starkov, A. S. Starkov, S. E. Tyaginov, H. Enichlmair, H. Ceric, T. Grasser: "An Analytical Model for MOSFET Local Oxide Capacitance"; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) . BibTeX |
| 1191. | D. Osintsev, A. Makarov, S. Selberherr, V. Sverdlov: "An InAs-Based Spin Field-Effect Transistor: A Path to Room Temperature Operation"; Talk: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 04.12.2011 - 09.12.2011; in "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2011), 2 page(s) . BibTeX |
| 1190. | H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "An Investigation of ZGNR-Based Transistors"; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) . BibTeX |
| 1189. | H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "An Investigation of the Geometrical Effects on the Thermal Conductivity of Graphene Antidot Lattices"; Talk: 219th ECS Meeting, Montreal, Canada; 01.05.2011 - 06.05.2011; in "219th ECS Meeting", (2011), 1 page(s) . BibTeX |
| 1188. | I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser: "Analysis of Worst-Case Hot-Carrier Conditions for n-type MOSFET"; Talk: 7th Conference on PhD Research in Microelectronics and Electronics (PRIME), Madonna di Campiglio, Italy; 03.07.2011 - 07.07.2011; in "Proceedings of the 7th Conference on PhD Research in Microelectronics and Electronics", (2011), ISBN: 978-1-4244-9136-0, 4 page(s) doi:10.1109/PRIME.2011.5966251. BibTeX |
| 1187. | I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann: "Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of n- and p-channel High-Voltage MOSFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 127 - 130 doi:10.1109/SISPAD.2011.6035066. BibTeX |
| 1186. | T. Grasser, P.-J. Wagner, H. Reisinger, T. Aichinger, G. Pobegen, M. Nelhiebel, B. Kaczer: "Analytic Modeling of the Bias Temperature Instability Using Capture/Emission Time Maps"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 05.12.2011 - 07.12.2011; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2, 4 page(s) doi:10.1109/IEDM.2011.6131624. BibTeX |
| 1185. | B. Kaczer, S. Mahato, V. Valduga de Almeida Camargo, M. Toledano-Luque, Ph. J. Roussel, T. Grasser, F. Catthoor, P. Dobrovolny, P. Zuber, G.I. Wirth, G. Groeseneken: "Atomistic Approach to Variability of Bias-Temperature Instability in Circuit Simulations"; Poster: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 5 page(s) . BibTeX |
| 1184. | N. Neophytou, H. Kosina: "Atomistic Simulations of Electronic and Thermoelectric Transport in Si Nanowires: Influence of Confinement and Orientation"; Talk: Workshop of the Physics and Applications of Semiconducting Nanowires (Nanowires11), Plomarion, Greece; 14.06.2011 - 17.06.2011; in "Conference Proceedings of the Workshop of the Physics and Applications of Semiconducting Nanowires (Nanowires11)", (2011), 1 page(s) . BibTeX |
| 1183. | D. Osintsev, V. Sverdlov, Z. Stanojevic, S. Selberherr: "Ballistic Spin Field Effect Transistor Based on Silicon Nanowires"; Talk: APS March Meeting, Dallas, Texas, USA; 21.03.2011 - 25.03.2011; in "Bulletin American Physical Society (APS March Meeting 2011)", (2011), . BibTeX |
| 1182. | D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr: "Ballistic Spin Field-Effect Transistors Built on Silicon Fins"; Poster: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada, Spain; 17.01.2011 - 19.01.2011; in "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), 59 - 60. BibTeX |
| 1181. | D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr: "Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 30.08.2011 - 02.09.2011; in "ECS Transactions", (2011), ISBN: 978-1-56677-900-5, 155 - 162 doi:10.1149/1.3615189. BibTeX |
| 1180. | D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr: "Ballistic Transport in Spin Field-Effect Transistors Built on Si and InAs"; Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 01.08.2011 - 05.08.2011; in "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), 229. BibTeX |
| 1179. | D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr: "Ballistic Transport in Spin Field-Effect Transistors Built on Silicon"; Talk: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 17.07.2011 - 22.07.2011; in "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 page(s) . BibTeX |
| 1178. | W. Gös, F. Schanovsky, H. Reisinger, B. Kaczer, T. Grasser: "Bistable Defects as the Cause for NBTI and RTN"; Talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; (invited) 25.09.2011 - 30.09.2011; in "GADEST 2011: Abstract Booklet", (2011), 153. BibTeX |
| 1177. | T. Grasser: "Cause, Detection, and Impact of Charge Trapping on Aging"; Talk: VLSI Symposium Short Course, Kyoto, Japan; 14.06.2011 - 18.06.2011; . BibTeX |
| 1176. | T. Grasser: "Charge Trapping in Oxides From RTN to BTI"; Talk: International Reliability Physics Symposium (IRPS), Monterey (Tutorial); 10.04.2011 - 14.04.2011; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 128 page(s) . BibTeX |
| 1175. | A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina: "Compact Model for the Electronic Properties of Edge-Disordered Graphene Nanoribbons"; Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria; 18.04.2011 - 20.04.2011; in "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", (2011), ISBN: 978-1-4577-0105-4, 4 page(s) doi:10.1109/ESIME.2011.5765816. BibTeX |
| 1174. | R. Orio, S. Selberherr: "Compact Modeling of Interconnect Reliability"; Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Tianjin, China; (invited) 17.11.2011 - 18.11.2011; in "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2011), ISBN: 978-1-4577-1998-1, 2 page(s) doi:10.1109/EDSSC.2011.6117564. BibTeX |
| 1173. | N. Neophytou, H. Kosina: "Confinement-Induced Mobility Increase in p-type [110] and [111] Silicon Nanowires"; Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada, Spain; 17.01.2011 - 19.01.2011; in "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon On Insulator Thechnology, Devices and Circuits (EUROSOI)", (2011), 2 page(s) . BibTeX |
| 1172. | R. Southwick III, S. T. Purnell, B. A. Rapp, R. J. Thompson, S. K. Pugmire, B. Kaczer, T. Grasser, B. Knowlton: "Cryogenic to Room Temperature Effects of NBTI in High-k PMOS Devices"; Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 16.10.2011 - 20.10.2011; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), 12 - 16. BibTeX |
| 1171. | J. Weinbub, K. Rupp, S. Selberherr: "Distributed Heterogenous High-Performance Computing with ViennaCL"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2011 - 10.06.2011; in "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), 88 - 90. BibTeX |
| 1170. | H. Mahmoudi, V. Sverdlov, S. Selberherr: "Domain-Wall Spintronic Memristor for Capacitance and Inductance Sensing"; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) . BibTeX |
| 1169. | O. Baumgartner, Z. Stanojevic, H. Kosina: "Efficient Simulation of Quantum Cascade Lasers using the Pauli Master Equation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 91 - 94 doi:10.1109/SISPAD.2011.6035057. BibTeX |
| 1168. | A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer"; Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 28.09.2011 - 30.09.2011; in "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), ISBN: 978-4-86348-200-5, 2 page(s) . BibTeX |
| 1167. | H. Karamitaheri, M. Pourfath, N. Neophytou, M. Pazoki, H. Kosina: "First Principle Study of Ballistic Thermal Conductance of Graphene Antidot Lattices for Thermoelectric Applications"; Talk: Carbon-Based Low Dimensional Materials (Carbomat), Catania, Italy; 05.12.2011 - 07.12.2011; in "Proceedings of the 2nd CARBOMAT Workshop", (2011), ISBN: 978-88-8080-124-5, 19 - 22. BibTeX |
| 1166. | M. Toledano-Luque, B. Kaczer, J. Franco, Ph. J. Roussel, T. Grasser, T. Y. Hoffmann, G. Groeseneken: "From Mean Values to Distributions of BTI Lifetime of Deeply Scaled FETs Through Atomistic Understanding of the Degradation"; Talk: Symposium on VLSI Technology, Kyoto, Japan; 14.06.2011 - 16.06.2011; in "2011 Symposium on VLSI Technology Digest of Technical Papers", (2011), ISBN: 978-1-4244-9949-6, 2 page(s) . BibTeX |
| 1165. | J. Weinbub, J. Cervenka, K. Rupp, S. Selberherr: "High-Quality Mesh Generation Based on Orthogonal Software Modules"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 139 - 142 doi:10.1109/SISPAD.2011.6035078. BibTeX |
| 1164. | H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "Hydrogen-Passivated Graphene Antidot Structures for Thermoelectric Applications"; Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria; 18.04.2011 - 20.04.2011; in "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", (2011), ISBN: 978-1-4577-0105-4, 4 page(s) doi:10.1109/ESIME.2011.5765811. BibTeX |
| 1163. | G. Pobegen, T. Aichinger, T. Grasser, M. Nelhiebel: "Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs"; Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 03.10.2011 - 07.10.2011; in "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2011), 1530 - 1534. BibTeX |
| 1162. | I. Starkov, H. Ceric: "Impact of Interface State Density on MOSFET Local Oxide Capacitance Degradation During Hot-Carrier Stress"; Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 28.09.2011 - 30.09.2011; in "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), 90 - 91. BibTeX |
| 1161. | S. E. Tyaginov, I. Starkov, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser: "Impact of the Carrier Distribution Function on Hot-Carrier Degradation Modeling"; Talk: European Solid-State Device Research Conference (ESSDERC), Helsinki, Finland; 12.09.2011 - 16.09.2011; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2011), 151 - 154. BibTeX |
| 1160. | C. Poschalko, S. Selberherr: "Influence of the PCB Dielectric Material on the Coupling of PCB Traces to Enclosure Cavities"; Talk: Asia-Pacific International Symposium on Electromagnetic Compatibility, Jeju, Korea; 16.05.2011 - 19.05.2011; in "Proceedings of Asia-Pacific International Symposium on Electromagnetic Compatibility", (2011), 4 page(s) . BibTeX |
| 1159. | H. Ceric, R. Orio, S. Selberherr: "Integration of Atomistic and Continuum-Level Electromigration Models"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Incheon, South Korea; 04.07.2011 - 07.07.2011; in "IPFA 2011 Proceedings", (2011), ISBN: 978-1-4577-0159-7, 4 page(s) doi:10.1109/IPFA.2011.5992749. BibTeX |
| 1158. | H. Ceric, R. Orio, S. Selberherr: "Interconnect Reliability Dependence on Fast Diffusivity Paths"; Talk: International Conference on Materials for Advanced Technologies (ICMAT), Suntec, Singapore; (invited) 26.06.2011 - 01.07.2011; in "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2011)", (2011), 33. BibTeX |
| 1157. | A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Micromagnetic Modeling of Penta-Layer Magnetic Tunnel Junctions with a Composite Soft Layer"; Talk: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 17.07.2011 - 22.07.2011; in "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 page(s) . BibTeX |
| 1156. | R. Orio, H. Ceric, S. Selberherr: "Modeling Electromigration Lifetimes of Copper Interconnects"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 30.08.2011 - 02.09.2011; in "ECS Transactions", (2011), ISBN: 978-1-56677-900-5, 163 - 169 doi:10.1149/1.3615190. BibTeX |
| 1155. | A. Makarov, S. Selberherr, V. Sverdlov: "Modeling of Advanced Memories"; Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Tianjin, China; (invited) 17.11.2011 - 18.11.2011; in "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2011), ISBN: 978-1-4577-1998-1, 2 page(s) doi:10.1109/EDSSC.2011.6117568. BibTeX |
| 1154. | M. Bina, T. Aichinger, G. Pobegen, W. Gös, T. Grasser: "Modeling of DCIV Recombination Currents Using A Multistate Multiphonon Model"; Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 16.10.2011 - 20.10.2011; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), 27 - 31. BibTeX |
| 1153. | T. Grasser: "Modeling of Device Reliability"; Talk: Tutorial at 37th European Solid-State Devices Conference, Helsinki, Finland; 12.09.2011 - 16.09.2011; . BibTeX |
| 1152. | A. Makarov, V. Sverdlov, D. Kryzhanovsky, M. Girkin, S. Selberherr: "Modeling of Non-Volatile Memory Cells of RRAM Type on High Performance Computer Systems with the Monte-Carlo Method"; Poster: Parallel Computing Technologies (PaVT), Moscow, Russia; 28.03.2011 - 01.04.2011; in "Book of Abstracts: Parallel Computing Technologies (PaVT)", (2011), 1 page(s) . BibTeX |
| 1151. | A. Makarov, V. Sverdlov, D. Osintsev, J. Weinbub, S. Selberherr: "Modeling of the Advanced Spin Transfer Torque Memory: Macro- and Micromagnetic Simulations"; Talk: The European Simulation and Modelling Conference (ESM), Guimaraes, Portugal; 24.10.2011 - 26.10.2011; in "Proceedings of the 25th European Simulation and Modelling Conference", (2011), ISBN: 978-90-77381-66-3, 177 - 181. BibTeX |
| 1150. | A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Modeling of the Switching Process in Multi-Layered Magnetic Tunnel Junctions"; Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 01.08.2011 - 05.08.2011; in "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), 238. BibTeX |
| 1149. | P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov: "Monte Carlo Investigations of Electron Decoherence due to Phonons"; Talk: Seminar on Monte Carlo Methods (MCM), Borovets; 29.08.2011 - 02.09.2011; in "Abstracts IMACS Seminar on Monte Carlo Methods (MCM)", (2011), 48. BibTeX |
| 1148. | O. Baumgartner, Z. Stanojevic, H. Kosina: "Monte Carlo Simulation of Electron Transport in Quantum Cascade Lasers"; Talk: Seminar on Monte Carlo Methods (MCM), Borovets; 29.08.2011 - 02.09.2011; in "Abstracts IMACS Seminar on Monte Carlo Methods (MCM)", (2011), 21. BibTeX |
| 1147. | G. Milovanovic, O. Baumgartner, M. Nobile, H. Detz, A. M. Andrews, G. Strasser, H. Kosina: "Monte Carlo Simulation of an Al-free Quantum Cascade Laser"; Talk: MIRTHE-IROn-SensorCAT virtual conference, Princenton; 19.01.2011 - 20.01.2011; . BibTeX |
| 1146. | F. Schanovsky, O. Baumgartner, T. Grasser: "Multi Scale Modeling of Multi Phonon Hole Capture in the Context of NBTI"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 15 - 18 doi:10.1109/SISPAD.2011.6035038. BibTeX |
| 1145. | H. Ceric, R. Orio, F. Schanovsky, W. H. Zisser, S. Selberherr: "Multilevel Simulation for the Investigation of Fast Diffusivity Paths"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 135 - 138 doi:10.1109/SISPAD.2011.6035068. BibTeX |
| 1144. | S. Vitanov, J. Kuzmik, V. Palankovski: "Normally-Off InAlN/GaN HEMTs with n++ GaN Cap Layer: A Simulation Study"; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) doi:10.1109/ISDRS.2011.6135161. BibTeX |
| 1143. | K. Rupp, T. Grasser, A. Jüngel: "On the Feasibility of Spherical Harmonics Expansions of the Boltzmann Transport Equation for Three-Dimensional Device Geometries"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 05.12.2011 - 07.12.2011; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2, 4 page(s) doi:10.1109/IEDM.2011.6131667. BibTeX |
| 1142. | F. Schanovsky, T. Grasser: "On the Microscopic Limit of the Reaction-Diffusion Model for the Negative Bias Temperature Instability"; Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 16.10.2011 - 20.10.2011; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), 17 - 21. BibTeX |
| 1141. | J. Franco, B. Kaczer, G. Eneman, Ph. J. Roussel, M. Cho, J. Mitard, L. Witters, T. Y. Hoffmann, G. Groeseneken, F. Crupi, T. Grasser: "On the Recoverable and Permanent Components of Hot Carrier and NBTI in Si pMOSFETs and their Implications in Si0.45Ge0.55 pMOSFETs"; Talk: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 6 page(s) doi:10.1109/IRPS.2011.5784545. BibTeX |
| 1140. | A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Optimization of the Penta-Layer Magnetic Tunnel Junction for Fast STTRAM Switching"; Talk: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 04.12.2011 - 09.12.2011; in "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2011), 2 page(s) . BibTeX |
| 1139. | T. Grasser: "Oxide Defects: From Microscopic Physics to Compact Models"; Talk: SISPAD Workshop, Osaka, JAPAN; 08.09.2011 - 10.09.2011; . BibTeX |
| 1138. | K. Rupp, T. Grasser, A. Jüngel: "Parallel Preconditioning for Spherical Harmonics Expansions of the Boltzmann Transport Equation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 147 - 150 doi:10.1109/SISPAD.2011.6034963. BibTeX |
| 1137. | L. Filipovic, O. Ertl, S. Selberherr: "Parallelization Strategy for Hierarchical Run Length Encoded Data Structures"; Talk: IASTED International Conference on Parallel and Distributed Computing and Networks (PDCN 2011), Innsbruck; 15.02.2011 - 17.02.2011; in "Proceedings of the IASTED International Conference on Parallel and Distributed Computing and Networks (PDCN 2011)", (2011), ISBN: 978-0-88986-864-9, 131 - 138 doi:10.2316/P.2011.719-045. BibTeX |
| 1136. | G. R. Aloise, S. Vitanov, V. Palankovski: "Performance Study of Nitride-Based Gunn Diodes"; Talk: Nanotech 2011, Boston, USA; 13.06.2011 - 16.06.2011; in "Technical Proceedings of the 2011 NSTI Nanotechnology Conference & Expo - Nanotech 2011", (2011), ISBN: 978-1-4398-7139-3, 4 page(s) . BibTeX |
| 1135. | P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov: "Phonon-Induced Decoherence in Electron Evolution"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2011 - 10.06.2011; in "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), 74 - 75. BibTeX |
| 1134. | A. Starkov, O. Pakhomov, I. Starkov: "Physical Model for Ferroelectrics Based on Pyrocurrent Consideration"; Poster: 12th European Meeting on Ferroelectricity, Bordeaux, France; 26.06.2011 - 01.07.2011; . BibTeX |
| 1133. | S. E. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser: "Physics-Based Hot-Carrier Degradation Modeling"; Talk: 219th ECS Meeting, Montreal, Canada; (invited) 01.05.2011 - 06.05.2011; in "Meet. Abstr. - Electrochem. Soc. 2011", (2011)", (2011), 1 page(s) . BibTeX |
| 1132. | D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr: "Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 59 - 62 doi:10.1109/SISPAD.2011.6035049. BibTeX |
| 1131. | D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr: "Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors Operated at Elevated Temperature"; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) . BibTeX |
| 1130. | D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, J. Weinbub, S. Selberherr: "Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors"; Talk: Meeting of the Electrochemical Society (ECS), Montreal, Canada; 01.05.2011 - 06.05.2011; in "Meeting Abstracts", (2011), MA2011-01(23): 1453, 1. BibTeX |
| 1129. | M. Pourfath: "Quantum Transport in Graphene-Based Devices: A Computational Study"; Talk: 17th Annual IASBS Meeting on Condensed Matter Physics, Zanjan, Iran; (invited) 26.05.2011 - 27.05.2011; . BibTeX |
| 1128. | Ph. Hehenberger, W. Gös, O. Baumgartner, J. Franco, B. Kaczer, T. Grasser: "Quantum-Mechanical Modeling of NBTI in High-k SiGe MOSFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 11 - 14 doi:10.1109/SISPAD.2011.6035036. BibTeX |
| 1127. | B. Kaczer, M. Toledano-Luque, J. Franco, T. Grasser, Ph. J. Roussel, V. V. A. Camargo, S. Mahato, E. Simoen, F. Catthoor, G.I. Wirth, G. Groeseneken: "Recent Trends in CMOS Reliability: From Individual Traps to Circuit Simulations"; Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; (invited) 16.10.2011 - 20.10.2011; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), 32. BibTeX |
| 1126. | M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, T. Grasser, G.I. Wirth, J. Franco, C. Vrancken, N. Horiguchi, G. Groeseneken: "Response of a Single Trap to AC Negative Bias Temperature Stress"; Talk: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 8 page(s) . BibTeX |
| 1125. | S. E. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann: "Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage n-MOSFET"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 123 - 126 doi:10.1109/SISPAD.2011.6035065. BibTeX |
| 1124. | H. Kosina: "Semiconductor Device Modeling: The Last 30 Years"; Talk: GMe Forum 2011, Vienna, Austria; (invited) 14.04.2011 - 15.04.2011; in "Abstracts of the Invited Presentations", (2011), 9. BibTeX |
| 1123. | A. Starkov, O. Pakhomov, I. Starkov: "Solid-State Cooler - New Opportunities"; Poster: 12th European Meeting on Ferroelectricity, Bordeaux, France; 26.06.2011 - 01.07.2011; . BibTeX |
| 1122. | N. Neophytou, H. Kosina: "Strong Anisotropy and Diameter Effects on the Low-Field Mobility of Silicon Nanowires"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 31 - 34 doi:10.1109/SISPAD.2011.6035042. BibTeX |
| 1121. | S. Vitanov, J. Kuzmik, V. Palankovski: "Study of the Conduction Properties of the n++ GaN Cap Layer in GaN/InAlN/GaN E-HEMTs"; Talk: International Scientific and Applied Science Conference on Electronics, Sozopol, Bulgaria; 14.09.2011 - 16.09.2011; in "Annual Journal of Electronics", (2011), 113 - 116. BibTeX |
| 1120. | Z. Stanojevic, V. Sverdlov, O. Baumgartner, H. Kosina: "Subband Engineering in n-Type Silicon Nanowires using Strain and Confinement"; Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada, Spain; 17.01.2011 - 19.01.2011; in "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), 99 - 100. BibTeX |
| 1119. | Z. Stanojevic, V. Sverdlov, S. Selberherr: "Subband Structure Engineering in Silicon-on-Insulator FinFETs using Confinement"; Poster: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Montreal; 01.05.2011 - 06.05.2011; in "219th ECS Meeting", (2011), Vol.35, No.5, ISBN: 978-1-56677-866-4, 117 - 122 doi:10.1149/1.3570785. BibTeX |
| 1118. | J. Franco, B. Kaczer, G. Eneman, Ph. J. Roussel, T. Grasser, J. Mitard, L. Ragnarsson, M. Cho, L. Witters, T. Chiarella, M. Togo, W. Wang, A. Hikavyy, R. Loo, N. Horiguchi, G. Groeseneken: "Superior NBTI Reliability of SiGe Channel pMOSFETs: Replacement Gate, FinFETs, and Impact of Body Bias"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 05.12.2011 - 07.12.2011; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2, 4 page(s) doi:10.1109/IEDM.2011.6131580. BibTeX |
| 1117. | A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Switching Time and Current Reduction Using a Composite Free Layer in Magnetic Tunnel Junctions"; Poster: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) . BibTeX |
| 1116. | G. R. Aloise, S. Vitanov, V. Palankovski: "Temperature Dependence of the Transport Properties of InN"; Talk: Microtherm 2011, Lodz, Poland; 28.06.2011 - 01.07.2011; in "Official Proceedings of Microtherm 2011", (2011), ISBN: 978-83-932197-0-4, 6 page(s) . BibTeX |
| 1115. | T. Grasser, T. Aichinger, G. Pobegen, H. Reisinger, P.-J. Wagner, J. Franco, M. Nelhiebel, B. Kaczer: "The `Permanent´ Component of NBTI: Composition and Annealing"; Talk: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 9 page(s) . BibTeX |
| 1114. | N. Neophytou, H. Kosina: "Thermoelectric Power Factor of Low Dimensional Silicon Nanowires"; Talk: European Conference on Thermoelectrics, Thessaloniki, Greece; 28.09.2011 - 30.09.2011; in "Conference Proceedings of 9th European Conference on Thermoelectrics", (2011), 4 page(s) . BibTeX |
| 1113. | N. Neophytou, H. Kosina: "Thermoelectric Power Factor of Narrow Silicon Nanowires from Atomistic Considerations"; Talk: 30th International Conference on Thermoelectrics, Michigan, USA; 17.07.2011 - 21.07.2011; in "Book of Abstracts", (2011), 1 page(s) . BibTeX |
| 1112. | N. Neophytou, H. Kosina: "Thermoelectric Properties of Ultra Narrow Silicon Nanowires from Atomistic Calculations"; Talk: APS March Meeting, Dallas, Texas; 21.03.2011 - 25.03.2011; in "APS March Meeting 2011", (2011), 1 page(s) . BibTeX |
| 1111. | H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "Transport Gap Engineering in Zigzag Graphene Nanoribbons"; Poster: Trends in Nanotechnology Conference (TNT), Canary Islands, Spain; 21.11.2011 - 25.11.2011; in "Poster Abstracts Book (TNT 2011)", (2011), 2. BibTeX |
| 1110. | S. Selberherr: "Transport Modeling for Nanoscale Semiconductor Devices"; Talk: IEEE EDS Mini-Colloquium Distinguished Lecture, Tianjin University, Tianjin, China; (invited) 16.11.2011. BibTeX |
| 1109. | D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr: "Transport Modeling in Spin Field-Effect Transistors Built on Silicon Fins"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2011 - 10.06.2011; in "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), 64. BibTeX |
| 1108. | D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr: "Transport Properties of Spin Field-Effect Transistors Built on Si and InAs"; Talk: International Conference on Ultimate Integration of Silicon (ULIS), Cork, Ireland; 14.03.2011 - 16.03.2011; in "Proceedings of the 12th International Conference on Ultimate Integration on Silicon (ULIS)", (2011), ISBN: 978-1-4577-0090-3, 210 - 213 doi:10.1109/ULIS.2011.5757998. BibTeX |
| 1107. | G. Pobegen, T. Aichinger, M. Nelhiebel, T. Grasser: "Understanding Temperature Acceleration for NBTI"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 05.12.2011 - 07.12.2011; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2, 4 page(s) doi:10.1109/IEDM.2011.6131623. BibTeX |
| 1106. | H. Reisinger, T. Grasser, K. Ermisch, H. Nielen, W. Gustin, C. Schlünder: "Understanding and Modeling AC BTI"; Talk: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 8 page(s) . BibTeX |
| 1105. | M. F. Bukhori, T. Grasser, B. Kaczer, H. Reisinger, A. Asenov: "'Atomistic' Simulation of RTS Amplitudes Due to Single and Multiple Charged Defect States and Their Interactions"; Talk: IEEE International Integrated Reliability Workshop, California; 17.10.2010 - 21.10.2010; in "Final Report of IEEE International Integrated Reliability Workshop", (2010), 76 - 79 doi:10.1109/IIRW.2010.5706490. BibTeX |
| 1104. | J. Franco, B. Kaczer, G. Eneman, J. Mitard, A. Stesmans, V. Afanas´Ev, T. Kauerauf, Ph. J. Roussel, M. Toledano-Luque, M. Cho, R. Degraeve, T. Grasser, L. Ragnarsson, L. Witters, J. Tseng, S. Takeoka, W. Wang, T. Y. Hoffmann, G. Groeseneken: "6Å EOT Si45Ge55 pMOSFET with Optimized Reliability (VDD=1V): Meeting the NBTI Lifetime Target at Ultra-Thin EOT"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 06.12.2010 - 08.12.2010; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2010), 70 - 73 doi:10.1109/IEDM.2010.5703292. BibTeX |
| 1103. | N. Neophytou, G. Klimeck, H. Kosina: "A Comprehensive Atomistic Analysis of Bandstructure Velocities in Si Nanowires"; Poster: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 93 - 96 doi:10.1109/IWCE.2010.5678007. BibTeX |
| 1102. | J. Weinbub, P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr: "A Dispatched Covariant Type System for Numerical Applications in C++"; Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in "AIP Conference Proceedings", (2010), ISBN: 978-0-7354-0834-0, 1663 - 1666. BibTeX |
| 1101. | J. Weinbub, R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr: "A Lightweight Material Library for Scientific Computing in C++"; Talk: The European Simulation and Modelling Conference (ESM), Hasselt; 25.10.2010 - 27.10.2010; in "Proceedings of the European Simulation and Modelling Conference (ESM)", (2010), ISBN: 978-90-77381-57-1, 454 - 458. BibTeX |
| 1100. | K. Rupp, T. Grasser, A. Jüngel: "A Matrix Compression Scheme for Spherical Harmonics Expansions of the Boltzmann Transport Equation"; Talk: Junior Scientist Conference 2010 (JSC 2010), Wien; 07.04.2010 - 09.04.2010; in "Proceedings of the Junior Scientist Conference 2010", (2010), ISBN: 978-3-200-01797-9, 7 - 8. BibTeX |
| 1099. | G. Mach, R. Heinzl, P. Schwaha, F. Stimpfl, J. Weinbub, S. Selberherr: "A Modular Tool Chain for High Performance CFD Simulations in Intracranial Aneurysms"; Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in "AIP Conference Proceedings", (2010), ISBN: 978-0-7354-0834-0, 1647 - 1650. BibTeX |
| 1098. | A. Makarov, V. Sverdlov, S. Selberherr: "A Monte Carlo Simulation of Reproducible Hysteresis in RRAM"; Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 35 - 38 doi:10.1109/IWCE.2010.5677934. BibTeX |
| 1097. | C. Schlünder, H. Reisinger, W. Gustin, T. Grasser: "A New Physics-Based NBTI Model for DC-and AC-Stress Enabling Accurate Circuit Aging Simulations Considering Recovery"; Talk: 4. GMM/GI/ITG-Fachtagung Zuverlässigkeit und Entwurf (ZuE 2010), Wildbad Kreuth; 13.09.2010 - 15.09.2010; in "GMM- Fachbericht", (2010), 66, 33 - 40. BibTeX |
| 1096. | A. Makarov, V. Sverdlov, S. Selberherr: "A Stochastic Model of Bipolar Resistive Switching in Metal-Oxide-Based Memory"; Talk: European Solid-State Device Research Conference (ESSDERC), Sevilla; 14.09.2010 - 16.09.2010; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-1-4244-6660-3, 396 - 399. BibTeX |
| 1095. | F. Stimpfl, J. Weinbub, R. Heinzl, P. Schwaha, S. Selberherr: "A Unified Topological Layer for Finite Element Space Discretization"; Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in "AIP Conference Proceedings", (2010), ISBN: 978-0-7354-0834-0, 1655 - 1658. BibTeX |
| 1094. | F. Schanovsky, W. Gös, T. Grasser: "Ab-Initio Calculation of the Vibrational Influence on Hole-Trapping"; Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 163 - 166 doi:10.1109/IWCE.2010.5677989. BibTeX |
| 1093. | A. Garcia-Barrientos, V. Palankovski, V. Grimalsky: "Amplification of Space Charge Waves at Very High Electric Fields in GaAs Films"; Talk: International Conference on Microelectronics (MIEL), Nis; 16.05.2010 - 19.05.2010; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2010), ISBN: 978-1-4244-7198-0, 161 - 164 doi:10.1109/MIEL.2010.5490510. BibTeX |
| 1092. | A. Garcia-Barrientos, V. Palankovski: "Amplification of Space Charge Waves in n-InP Films"; Talk: 7th International Conference on Electrical Engineering, Computing, Science and Automatic Control (CCE 2010), Chiapas, Mexico; 08.09.2010 - 10.09.2010; in "Proceedings of the 7th International Conference on Electrical Engineering, Computing, Science and Automatic Control (CCE 2010)", (2010), ISBN: 978-1-4244-7314-4, 613 - 616 doi:10.1109/ICEEE.2010.5608605. BibTeX |
| 1091. | I. Starkov, S. E. Tyaginov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 139 - 144. BibTeX |
| 1090. | K. Rupp, H. Ceric: "Analytical and Numerical Investigation of the Segregation Problem"; Talk: 4th International Conference Computational Methods in Applied Mathematics: CMAM-4, Bedlewo; 20.06.2010 - 26.06.2010; . BibTeX |
| 1089. | N. Neophytou, M. Wagner, H. Kosina: "Atomistic Analysis of Thermoelectric Properties of Silicon Nanowires"; Talk: 8th European Conference on Thermoelectrics (ECT 2010), Como; 22.09.2010 - 24.09.2010; in "Note-Book of Abstracts", (2010), 30. BibTeX |
| 1088. | N. Neophytou, H. Kosina: "Atomistic Analysis of Thermoelectric Properties of Ultra Narrow Nanowires"; Talk: Annual March Meeting of the American Physical Society, Portland; 15.03.2010 - 19.03.2010; in "Proceedings of the Annual March Meeting of the American Physical Society", (2010), 401. BibTeX |
| 1087. | K. Rupp, J. Weinbub, F. Rudolf: "Automatic Performance Optimization in ViennaCL for GPUs"; Talk: Workshop on Parallel/High-Performance Object-Oriented Scientific Computing, Reno, Nevada, USA; 17.10.2010 - 21.10.2010; in "Proceedings of the 9th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing", (2010), 6 page(s) doi:10.1145/2039312.2039318. BibTeX |
| 1086. | A. Dedyk, Y. Pavlova, O. V. Pakhomov, A. S. Starkov, I. Starkov, A. Semenov, S. Karmanenko: "Capacitance Hysteresis of the Temperature Dependence for Ferroelectric Barium-Strontium Titanate Capacitors"; Poster: 16th Workshop on Dielectric Materials (WoDiM), Bratislava, Slovakia; 28.06.2010 - 30.06.2010; in "Book of Abstracts WoDiM 2010", (2010), 93. BibTeX |
| 1085. | T. Grasser: "Characterization and Modeling of the Negative Bias Temperature Instability"; Talk: VDE/VDI GMM Workshop "Stand und Perspektiven von SOI-Technologien und Anwendungen", Duisburg; (invited) 18.03.2010 - 19.03.2010; . BibTeX |
| 1084. | W. Gös, F. Schanovsky, Ph. Hehenberger, P.-J. Wagner, T. Grasser: "Charge Trapping and the Negative Bias Temperature Instability"; Talk: 218th ECS Meeting, Las Vegas, USA; 10.10.2010 - 15.10.2010; in "Meet. Abstr. - Electrochem. Soc. 2010", (2010), ISBN: 978-1-56677-822-0, 565 page(s) . BibTeX |
| 1083. | S. Vainshtein, V. Yuferev, J. Kostamovaara, V. Palankovski: "Collapsing Field Domains in Avalanche GaAs Transistors: Peculiar Phenomenon and Prospective Applications"; International Scientific and Applied Science Conference (ET), Sozopol, Bulgaria; (invited) 22.09.2009 - 24.09.2009; in "Annual Journal of Electronics", (2010), 4, ISSN: 1313-1842, 12 - 17. BibTeX |
| 1082. | V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr: "Confinement-Enhanced Valley Splitting for Spin-Driven Silicon Devices"; Talk: 6th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI), Tokyo; 01.08.2010 - 04.08.2010; in "Proceedings of the 6th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI)", (2010), 273 - 274. BibTeX |
| 1081. | G. Pobegen, T. Aichinger, M. Nelhiebel, T. Grasser: "Dependence of the Negative Bias Temperature Instability on the Gate Oxide Thickness"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0, 1073 - 1077. BibTeX |
| 1080. | M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, R. Degraeve, J. Franco, T. Kauerauf, T. Grasser, G. Groeseneken: "Depth Localization of Trapped Holes in SiON after Positive and Negative Gate Stress"; Poster: Semiconductor Interface Specialists Conference (SISC), San Diego; 02.12.2010 - 04.12.2010; . BibTeX |
| 1079. | G. Milovanovic, O. Baumgartner, H. Kosina: "Design of a MIR QCL based on Intervalley Electron Transfer: A Monte Carlo Approach"; Poster: 10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), Shanghai; 05.09.2010 - 09.09.2010; in "Proceedings of the 10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices", (2010), 140 - 141. BibTeX |
| 1078. | K. Rupp: "Deterministic Numerical Solution of the Boltzmann Transport Equation"; Talk: Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS, Wien, Austria; (invited) 03.11.2010 - 05.11.2010; in "Proceedings of the Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS", (2010), 7 - 8. BibTeX |
| 1077. | R. Huang, W. Robl, G. Dehm, H. Ceric, T. Detzel: "Disparate Tendency of Stress Evolution of Thin and Thick Electroplated Cu Films at Room Temperature"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 1 - 6. BibTeX |
| 1076. | H. Ceric, R. Orio, S. Selberherr: "Electromigration Anisotropy and Mechanical Stress in Modern Copper Interconnect"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 167 - 170. BibTeX |
| 1075. | S. Vitanov, V. Palankovski: "Electron Mobility Models for III-Nitrides"; Talk: International Scientific and Applied Science Conference (ET), Sozopol; 22.09.2010 - 24.09.2010; in "Annual Journal of Electronics", (2010), ISSN: 1313-1842, 18 - 21. BibTeX |
| 1074. | Z. Stanojevic, O. Baumgartner, V. Sverdlov, H. Kosina: "Electronic Band Structure Modeling in Strained Si-Nanowires: Two Band k · p Versus Tight Binding"; Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 5 - 8 doi:10.1109/IWCE.2010.5677927. BibTeX |
| 1073. | V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr: "Enhanced Valley Splitting in Silicon Nanowires and Point Contacts"; Poster: Nanoelectronics Days 2010, Aachen, Germany; 04.10.2010 - 07.10.2010; in "Abstract Book of the Nanoelectronics Days 2010", (2010), 118. BibTeX |
| 1072. | N. Neophytou, H. Kosina: "Extracting thermoelectric properties of nanostructures using the atomistic sp3d5s*-SO tight-binding model"; Poster: 451. WE-Heraeus-Seminar, Physikzentrum Bad Honnef; 21.02.2010 - 24.02.2010; in "Nanostructured Thermoelectric Materials", (2010), 1 page(s) . BibTeX |
| 1071. | A. Makarov, J. Weinbub, V. Sverdlov, S. Selberherr: "First-Principles Modeling of Bipolar Resistive Switching in Metal-Oxide Based Memory"; Talk: The European Simulation and Modelling Conference (ESM), Hasselt; 25.10.2010 - 27.10.2010; in "Proceedings of the European Simulation and Modelling Conference (ESM)", (2010), ISBN: 978-90-77381-57-1, 181 - 186. BibTeX |
| 1070. | P. Gottschling, R. Heinzl, J. Weinbub, N. Kirchner, M. Sauer, A. Klomfass, C. Steinhardt, J. Wensch: "Generic C++ Implementation of High-Performance BFS-RBF-based Mesh Motion Schemes"; Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in "AIP Conference Proceedings", (2010), 1281, ISBN: 978-0-7354-0834-0, 1631 - 1634. BibTeX |
| 1069. | I. Starkov, S. E. Tyaginov, H. Enichlmair, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser: "HC Degradation Model: Interface State Profile-Simulations vs. Experiment"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 28.06.2010 - 30.06.2010; in "Book of Abstracts", (2010), 128. BibTeX |
| 1068. | S. Vitanov, V. Palankovski: "High-Temperature Small-Signal Analysis of AlGaN/GaN HEMTs"; Poster: Junior Scientist Conference 2010 (JSC 2010), Wien; 07.04.2010 - 09.04.2010; in "Proceedings of the Junior Scientist Conference", (2010), ISBN: 978-3-200-01797-9, 59 - 60. BibTeX |
| 1067. | F. Schanovsky, W. Gös, T. Grasser: "Hole Capture into Oxide Defects in MOS Structures from First Principles"; Poster: Ψk - 2010 Conference, Berlin; 12.09.2010 - 16.09.2010; in "Abstract Book", (2010), 435. BibTeX |
| 1066. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 341 - 345. BibTeX |
| 1065. | S. Vitanov, V. Palankovski, S. Selberherr: "Hydrodynamic Models for GaN-Based HEMTs"; Poster: European Solid-State Device Research Conference (ESSDERC), Sevilla; 14.09.2010 - 16.09.2010; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-84-693-6437-6, 4 page(s) . BibTeX |
| 1064. | T. Aichinger, S. Puchner, M. Nelhiebel, T. Grasser, H. Hutter: "Impact of Hydrogen on Recoverable and Permanent Damage following Negative Bias Temperature Stress"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0, 1063 - 1068. BibTeX |
| 1063. | H. Ceric, R. Orio, S. Selberherr: "Impact of Parameter Variability on Electromigration Lifetime Distribution"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 06.09.2010 - 08.09.2010; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2, 217 - 220 doi:10.1109/SISPAD.2010.5604523. BibTeX |
| 1062. | J. Franco, B. Kaczer, J. Mitard, G. Eneman, Ph. J. Roussel, F. Crupi, T. Grasser, L. Witters, T. Y. Hoffmann, G. Groeseneken: "Implications of Channel Hot Carrier Degradation in Si0.45Ge0.55 pMOSFETs"; Poster: Semiconductor Interface Specialists Conference (SISC), San Diego; 02.12.2010 - 04.12.2010; . BibTeX |
| 1061. | J. Franco, B. Kaczer, M. Cho, G. Eneman, G. Groeseneken, T. Grasser: "Improvements of NBTI Reliability in SiGe p-FETs"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0, 1082 - 1085. BibTeX |
| 1060. | K. Rupp: "Increased Efficiency In Finite Element Computations Through Template Metaprogramming"; Talk: High Performance Computing Symposium (HPC), Orlando, FL, USA; 12.04.2010 - 15.04.2010; in "Proceedings of the Spring Simulation Multiconference 2010", (2010), ISBN: 978-1-4503-0069-8, 1 page(s) doi:10.1145/1878537.1878633. BibTeX |
| 1059. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Montecassino Abbey and Gaeta; 11.10.2010 - 15.10.2010; in "Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2010), 3 page(s) . BibTeX |
| 1058. | V. Sverdlov, O. Baumgartner, S. Selberherr: "Large Valley Splitting in Slightly Misaligned Uniaxially Strained Silicon Films"; Talk: APS March Meeting, Portland; 15.03.2010 - 19.03.2010; in "Bulletin American Physical Society (APS March Meeting 2010)", (2010), 49/2, B9.00001. BibTeX |
| 1057. | P. Schwaha, R. Heinzl: "Marching Simplices"; Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in "AIP Conference Proceedings", (2010), 1281, ISBN: 978-0-7354-0834-0, 1651 - 1654. BibTeX |
| 1056. | M. Pourfath, V. Sverdlov, S. Selberherr: "Modeling Demands for Nanoscale Devices"; Talk: Device Research Conference, South Bend; (invited) 21.06.2010 - 23.06.2010; in "Proceedings of the Device Research Conference (DRC)", (2010), ISBN: 978-1-4244-7870-5, 211 - 214. BibTeX |
| 1055. | V. Sverdlov, S. Selberherr: "Modeling Floating Body Z-RAM Storage Cells"; Talk: International Conference on Microelectronics (MIEL), Nis; (invited) 16.05.2010 - 19.05.2010; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2010), ISBN: 978-1-4244-7198-0, 45 - 50 doi:10.1109/MIEL.2010.5490533. BibTeX |
| 1054. | S. Selberherr: "Modeling Floating Body Z-RAM Storage Cells"; Talk: IEEE EDS Mini-Colloquium Distinguished Lecture, University of Nis, Nis, Serbia; (invited) 16.05.2010. BibTeX |
| 1053. | S. Selberherr: "Modeling Solar Cells"; Talk: IEEE EDS Mini-Colloquium Distinguished Lecture, Technische Universität Wien; (invited) 01.10.2010. BibTeX |
| 1052. | V. Sverdlov, S. Selberherr: "Modeling of Modern MOSFETs with Strain"; Talk: International Workshop on Semiconductor Devices Modeling and Electronic Materials, La Plata, Buenos Aires, Argentina; (invited) 01.11.2010 - 03.11.2010; in "Proceedings of the 1st International Workshop on Semiconductor Devices Modeling and Electronic (SDMEM2010)", (2010), ISBN: 978-950-34-0794-3, 1 - 11. BibTeX |
| 1051. | A. Makarov, V. Sverdlov, S. Selberherr: "Modeling of Resistive Switching in RRAM Using Monte Carlo Simulations"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 28.06.2010 - 30.06.2010; in "Book of Abstracts", (2010), 141. BibTeX |
| 1050. | R. Huang, W. Robl, T. Detzel, H. Ceric: "Modeling of Stress Evolution of Electroplated Cu Films during Self-annealing"; Poster: IEEE International Reliability Physics Symposium, Anaheim, USA; 02.05.2010 - 06.05.2010; in "Proceedings of the IEEE International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0, 911 - 917. BibTeX |
| 1049. | A. Makarov, V. Sverdlov, S. Selberherr: "Modelling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations"; Talk: International Conference on Numerical Methods and Applications (NM&A), Borovets; 20.08.2010 - 24.08.2010; in "Abstracts of the International Conference on Numerical Methods and Applications (NM&A)", (2010), B-39. BibTeX |
| 1048. | A. Makarov, V. Sverdlov, S. Selberherr: "Monte Carlo Simulation of Bipolar Resistive Switching Memories"; Talk: Nanoelectronics Days 2010, Aachen; 04.10.2010 - 07.10.2010; in "Proceedings of the Nanoelectronics Days 2010", (2010), 22. BibTeX |
| 1047. | F. Schanovsky, W. Gös, T. Grasser: "Mulit-Phonon Hole-Trapping from First-Principles"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 28.06.2010 - 30.06.2010; in "Book of Abstracts", (2010), 54. BibTeX |
| 1046. | S. Vitanov, V. Palankovski, S. Maroldt, R. Quay: "Non-Linearity of Transconductance and Source-Gate Resistance of HEMTs"; Poster: European Solid-State Device Research Conference (ESSDERC), Sevilla; 14.09.2010 - 16.09.2010; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-84-693-6437-6, 4 page(s) . BibTeX |
| 1045. | T. Grasser, T. Aichinger, H. Reisinger, J. Franco, P.-J. Wagner, M. Nelhiebel, C. Ortolland, B. Kaczer: "On the 'Permanent' Component of NBTI"; Talk: IEEE International Integrated Reliability Workshop, California; 17.10.2010 - 21.10.2010; in "Final Report of IEEE International Integrated Reliability Workshop", (2010), 2 - 7 doi:10.1109/IIRW.2010.5706472. BibTeX |
| 1044. | M. Pourfath, A. Yazdanpanah Goharrizi, M. Fathipour, H. Kosina: "On the Role of Line-Edge Roughness on the Diffusion and Localization in GNRs"; Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 45 - 48 doi:10.1109/IWCE.2010.5677936. BibTeX |
| 1043. | B. Kaczer, T. Grasser, Ph. J. Roussel, J. Franco, R. Degraeve, L. Ragnarsson, E. Simoen, G. Groeseneken, H. Reisinger: "Origin of NBTI Variability in Deeply Scaled pFETs"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0, 26 - 32. BibTeX |
| 1042. | P.-J. Wagner, T. Grasser, H. Reisinger, B. Kaczer: "Oxide Traps in MOS Transistors: Semi-Automatic Extraction of Trap Parameters from Time Dependent Defect Spectroscopy"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 134 - 138. BibTeX |
| 1041. | H. Kosina: "Quantum Cascade Laser Modeling based on the Pauli Master Equation"; Talk: Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS, Wien; (invited) 03.11.2010 - 05.11.2010; in "Proceedings of the Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS", (2010), 6. BibTeX |
| 1040. | T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, Ph. J. Roussel, M. Nelhiebel: "Recent Advances in Understanding the Bias Temperature Instability"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; (invited) 06.12.2010 - 08.12.2010; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2010), 82 - 85 doi:10.1109/IEDM.2010.5703295. BibTeX |
| 1039. | T. Grasser: "Recent Developments in Device Reliability Modeling"; Talk: MOS-AK ESSDERC Companion Workshop, Seville; (invited) 17.09.2010. BibTeX |
| 1038. | B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, G. Groeseneken: "Recent Trends in Bias Temperature Instability"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; (invited) 28.06.2010 - 30.06.2010; in "Book of Abstracts", (2010), 55. BibTeX |
| 1037. | Ph. Hehenberger, H. Reisinger, T. Grasser: "Recovery of Negative and Positive Bias Temperature Stress in pMOSFETs"; Talk: IEEE International Integrated Reliability Workshop, California; 17.10.2010 - 21.10.2010; in "Final Report of IEEE International Integrated Reliability Workshop", (2010), 8 - 11 doi:10.1109/IIRW.2010.5706473. BibTeX |
| 1036. | J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair: "Recovery-Free Electron Spin Resonance Observations of NBTI Degradation"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0, 43 - 49. BibTeX |
| 1035. | C. Poschalko, S. Selberherr: "Relation between the PCB Near Field and the Common Mode Coupling from the PCB to Cables"; Talk: Asia-Pacific International Symposium on Electromagnetic Compatibility, Beijing; 12.04.2010 - 16.04.2010; in "Proceedings of the Asia-Pacific International Symposium on Electromagnetic Compatibility (EMC)", (2010), ISBN: 978-1-4244-5623-9, 1102 - 1105. BibTeX |
| 1034. | V. Sverdlov, S. Selberherr: "Scalability of a Second Generation Z-RAM Cell: A Computational Study"; Talk: International Conference on Computational & Experimental Engineering and Sciences (ICCES), Las Vegas; 28.03.2010 - 01.04.2010; in "Proceedings of the International Conference on Computational & Experimental Engineering and Sciences (ICCES)", (2010), ISBN: 978-0-9824205-3-9, 232 - 247. BibTeX |
| 1033. | V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr: "Spin-Driven Silicon Devices Utilizing Enhanced Valley Splitting"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona; (invited) 05.12.2010 - 10.12.2010; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2010), TH-06. BibTeX |
| 1032. | T. Grasser: "Statistical Reliability in Nanoscale Devices"; Talk: SISPAD Workshop, Bologna; (invited) 08.09.2010. BibTeX |
| 1031. | M. Nedjalkov, S. Selberherr, I. Dimov: "Stochastic Algorithm for Solving the Wigner-Boltzmann Correction Equation"; Talk: International Conference on Numerical Methods and Applications (NM&A), Borovets; 20.08.2010 - 24.08.2010; in "Abstracts of the International Conference on Numerical Methods and Applications (NM&A)", (2010), B-43. BibTeX |
| 1030. | A. Makarov, V. Sverdlov, S. Selberherr: "Stochastic Modeling Hysteresis and Resistive Switching in Bipolar Oxide-Based Memory"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 06.09.2010 - 08.09.2010; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2, 237 - 240 doi:10.1109/SISPAD.2010.5604517. BibTeX |
| 1029. | A. Makarov, V. Sverdlov, S. Selberherr: "Stochastic Modeling of the Resistive Switching Mechanism in Oxide-Based Memory"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in "Proceedings of the 17th International Symposium on the Physics & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 309 - 312. BibTeX |
| 1028. | V. Sverdlov, S. Selberherr: "Strain Engineering Techniques: A Rigorous Physical Review"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona; (invited) 05.12.2010 - 10.12.2010; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2010), TH-05. BibTeX |
| 1027. | O. Baumgartner, V. Sverdlov, H. Kosina, S. Selberherr: "Strain-Induced Valley Splitting in Slightly Misaligned Silicon Films"; Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Grenoble; 25.01.2010 - 27.01.2010; in "Conference Proceedings of the Sixth Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2010), 91 - 92. BibTeX |
| 1026. | J. Cervenka, H. Kosina, S. Selberherr, J. Zhang, N. Hrauda, J. Stangl, G. Bauer, G. Vastola, A. Marzegalli, L. Miglio: "Strained MOSFETs on Ordered SiGe Dots"; Talk: European Solid-State Device Research Conference (ESSDERC), Sevilla; 14.09.2010 - 16.09.2010; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-1-4244-6660-3, 297 - 300. BibTeX |
| 1025. | Z. Stanojevic, O. Baumgartner, V. Sverdlov, H. Kosina: "Subband Structure of Silicon Nanowires from the Hensel-Hasegawa-Nakayama Model"; Talk: International Conference on Ultimate Integration of Silicon (ULIS), Glasgow, Scotland; 18.03.2010 - 19.03.2010; in "Proceedings of the 11th International Conference on Ultimate Integration o Silicon", (2010), 69 - 72. BibTeX |
| 1024. | K. Rupp: "Symbolic Integration at Compile Time in Finite Element Methods"; Talk: International Symposium on Symbolic and Algebraic Computation (ISSAC), Munich; 25.07.2010 - 28.07.2010; in "Proceedings of the 2010 International Symposium on Symbolic and Algebraic Computation", (2010), 347 - 354. BibTeX |
| 1023. | K. Rupp, T. Grasser, A. Jüngel: "System Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 06.09.2010 - 08.09.2010; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2, 159 - 162 doi:10.1109/SISPAD.2010.5604542. BibTeX |
| 1022. | M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, T. Grasser, G. Groeseneken: "Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature Stress"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 28.06.2010 - 30.06.2010; in "Book of Abstracts", (2010), 28. BibTeX |
| 1021. | M. Pourfath, A. Yazdanpanah Goharrizi, H. Kosina: "The Effect of Line-Edge Roughness on the Electronic Properties of Graphene Nano-Ribbons"; Talk: Ψk - 2010 Conference, Berlin; 12.09.2010 - 16.09.2010; in "Abstract Book", (2010), 419. BibTeX |
| 1020. | H. Reisinger, T. Grasser, K. Hofmann, W. Gustin, C. Schlünder: "The Impact of Recovery on BTI Reliability Assessments"; Talk: IEEE International Integrated Reliability Workshop, California; 17.10.2010 - 21.10.2010; in "Final Report of IEEE International Integrated Reliability Workshop", (2010), 12 - 16 doi:10.1109/IIRW.2010.5706474. BibTeX |
| 1019. | H. Reisinger, T. Grasser, C. Schlunder, W. Gustin: "The Statistical Analysis of Individual Defects constituting NBTI and its Implications for Modeling DC- and AC-Stress"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0, 7 - 15. BibTeX |
| 1018. | T. Grasser, H. Reisinger, P. Wagner, B. Kaczer, F. Schanovsky, W. Gös: "The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0, 16 - 25. BibTeX |
| 1017. | T. Grasser, H. Reisinger, P.-J. Wagner, W. Gös, F. Schanovsky, B. Kaczer: "The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Gaeta; (invited) 11.10.2010. BibTeX |
| 1016. | H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "Thermal Properties of Graphene Antidots"; Poster: Nanoelectronics Days 2010, Aachen; 04.10.2010 - 07.10.2010; in "Abstract Book of the Nanoelectronics Days 2010", (2010), 102. BibTeX |
| 1015. | N. Neophytou, H. Kosina: "Thermoelectric Properties of Scaled Silicon Nanostructures Using the sp3d5s*-SO Atomistic Tight-Binding Model"; Talk: 29th International Conference on Thermoelectrics, Shanghai; 30.05.2010 - 03.06.2010; in "Proceedings of the 29th International Conference on Thermoelectrics", (2010), 71. BibTeX |
| 1014. | O. Ertl, L. Filipovic, S. Selberherr: "Three-Dimensional Simulation of Focused Ion Beam Processing Using the Level Set Method"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 06.09.2010 - 08.09.2010; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7700-5, 49 - 52 doi:10.1109/SISPAD.2010.5604573. BibTeX |
| 1013. | M. Pourfath, V. Sverdlov, S. Selberherr: "Transport Modeling for Nanoscale Semiconductor Devices"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Shanghai; (invited) 01.11.2010 - 04.11.2010; in "Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2010), 4, ISBN: 978-1-4244-5799-1, 1737 - 1740. BibTeX |
| 1012. | T. Grasser: "Transport Modeling in Modern Semiconductor Devices"; Talk: CoMoN Workshop 2010, Tarragona; (invited) 30.06.2010 - 01.07.2010; . BibTeX |
| 1011. | A. Lugstein, M. Steinmair, A. Steiger-Thirsfeld, H. Kosina, E. Bertagnolli: "Tuning the Electronic Properties of Ultra-strained Silicon Nanowires"; Talk: MRS Fall Meeting, Boston, USA; 29.11.2010 - 03.12.2010; . BibTeX |
| 1010. | K. Rupp, F. Rudolf, J. Weinbub: "ViennaCL - A High Level Linear Algebra Library for GPUs and Multi-Core CPUs"; Talk: International Workshop on GPUs and Scientific Applications (GPUScA 2010), Vienna; 11.09.2010 in "Proceedings of the International Workshop on GPUs and Scientific Applications (GPUScA 2010)", (2010), 51 - 56. BibTeX |
| 1009. | J. Weinbub, K. Rupp, S. Selberherr: "ViennaIPD - An Input Control Language for Scientific Computing"; Talk: Industrial Simulation Conference (ISC), Budapest; 07.06.2010 - 09.06.2010; in "Proceedings of the Industrial Simulation Conference", (2010), ISBN: 978-90-77381-5-57, 34 - 38. BibTeX |
| 1008. | O. Ertl, S. Selberherr: "A Fast Void Detection Algorithm for Three-Dimensional Deposition Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 174 - 177 doi:10.1109/SISPAD.2009.5290221. BibTeX |
| 1007. | R. Sonderfeld, R. Heinzl: "A Generic and Self-Optimizing Polynomial Library"; Talk: European Conference on Object-Oriented Programming, Genova; 07.07.2009 in "Proceedings of the 8th workshop on Parallel/High-Performance", (2009), ISBN: 978-1-60558-547-5, . BibTeX |
| 1006. | W. Gös, T. Grasser, M. Karner, B. Kaczer: "A Model for Switching Traps in Amorphous Oxides"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 159 - 162 doi:10.1109/SISPAD.2009.5290226. BibTeX |
| 1005. | S. Vitanov, V. Palankovski, S. Maroldt, R. Quay: "A Simulation Study of Enhancement-Mode AlGaN/GaN HEMTs with Recessed Gates"; Talk: European Workshop on Heterostructure Technology, Guenzburg/Ulm; 02.11.2009 - 04.11.2009; in "HETECH 2009 Book of Abstracts", (2009), 109 - 110. BibTeX |
| 1004. | H. Reisinger, T. Grasser, C. Schlünder: "A Study of NBTI by the Statistical Analysis of the Properties of Individual Defects in pMOSFETS"; Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 18.10.2009 - 22.10.2009; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8, 30 - 35. BibTeX |
| 1003. | T. Grasser, B. Kaczer, W. Gös, T. Aichinger, Ph. Hehenberger, M. Nelhiebel: "A Two-Stage Model for Negative Bias Temperature Instability"; Talk: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 33 - 44. BibTeX |
| 1002. | M. Vasicek: "Advanced Macroscopic Transport Models"; Talk: Quantum Systems and Devices: Analysis, Simulations, Applications, Beijing; (invited) 20.04.2009 - 24.04.2009; in "Quantum Systems and Devices: Analysis, Simulations, Applications", (2009), 32. BibTeX |
| 1001. | V. Palankovski: "Analysis and Simulation of Semicondutor Devices"; Talk: 3er. Congreso Nacional de Mecatronica, Zempoala, Mexico; (invited) 25.11.2009 - 27.11.2009; . BibTeX |
| 1000. | N. Neophytou, M. Wagner, H. Kosina, S. Selberherr: "Analysis of Thermoelectric Properties of Scaled Silicon Nanostructures using an Atomistic Thight-Binding Model"; Talk: 28th International Conference/7th European Conference on Thermoelectrics, Freiburg; 26.07.2009 - 30.07.2009; in "Book of Abstracts", (2009), 91. BibTeX |
| 999. | B. Bindu, W. Gös, B. Kaczer, T. Grasser: "Analytical Solution of the Switching Trap Model for Negative Bias Temperature Stress"; Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 18.10.2009 - 22.10.2009; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8, 93 - 96. BibTeX |
| 998. | M. Pourfath, H. Kosina: "Carbon Based Electronics: A Computational Study"; Talk: Quantum Systems and Devices: Analysis, Simulations, Applications, Beijing; (invited) 20.04.2009 - 24.04.2009; in "Quantum Systems and Devices: Analysis, Simulations, Applications", (2009), 18. BibTeX |
| 997. | M. Pourfath, S. Selberherr: "Carbon-Based Electronics: A Computational Study"; Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Delhi; (invited) 15.12.2009 - 19.12.2009; in "Proceedings of the International Workshop on the Physics of Semiconductor Devices (IWPSD)", (2009), 6 page(s) . BibTeX |
| 996. | P. Schwaha, O. Baumgartner, R. Heinzl, M. Nedjalkov, S. Selberherr, I. Dimov: "Classical Approximation of the Scattering Induced Wigner Correction Equation"; Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 177 - 180 doi:10.1109/IWCE.2009.5091092. BibTeX |
| 995. | Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser: "Comparison of Fast Measurement Methods for Short-Term Negative Bias Temperature Stress and Relaxation"; Talk: European Solid-State Device Research Conference (ESSDERC), Athens; 14.09.2009 - 18.09.2009; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2009), ISBN: 978-1-4244-4351-2, 311 - 314. BibTeX |
| 994. | P. Schwaha, J. Cervenka, M. Nedjalkov, T. Gurov, G. Arsov, A. Misev, A. Zoric, S. Ilic: "Computational Electronics on GRID: A Mixed Mode Carrier Transport Model"; Talk: International Conference On Applications Of Mathematics In Technical And Natural Sciences, Sozopol (Bulgaria); 22.06.2009 - 27.06.2009; in "1st International Conference On Applications Of Mathematics In Technical And Natural Sciences", (2009), 1186, ISBN: 978-0-7354-0752-7, 206 - 214 doi:10.1063/1.3265331. BibTeX |
| 993. | H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "Copper Microstructure Impact on Evolution of Electromigration Induced Voids"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 178 - 181 doi:10.1109/SISPAD.2009.5290222. BibTeX |
| 992. | T. Grasser, B. Kaczer: "Critical Modeling Issues in Negative Bias Temperature Instability"; Talk: 215th ECS Meeting, San Francisco; (invited) 24.05.2009 - 29.05.2009; in "Meeting Abstracts MA 2009-01", (2009), ISSN: 1091-8213, 793. BibTeX |
| 991. | R. Heinzl: "Data Structure Properties for Scientific Computing: An Algebraic Topology Library"; Talk: European Conference on Object-Oriented Programming, Genova; 07.07.2009 in "Proceedings of the 8th workshop on Parallel/High-Performance", (2009), ISBN: 978-1-60558-547-5, . BibTeX |
| 990. | N. Neophytou, H. Kosina, S. Selberherr, G. Klimeck: "Dependence of Injection Velocity and Capacitance of Si Nanowires on Diameter, Orientation, and Gate Bias: An Atomistic Tight-Binding Study"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 71 - 74 doi:10.1109/SISPAD.2009.5290245. BibTeX |
| 989. | S. E. Tyaginov, W. Gös, T. Grasser, V. Sverdlov, P. Schwaha, R. Heinzl, F. Stimpfl: "Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole Crystal"; Talk: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 514 - 522. BibTeX |
| 988. | Ph. Hehenberger, T. Aichinger, T. Grasser, W. Gös, O. Triebl, B. Kaczer, M. Nelhiebel: "Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement Technique"; Poster: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 1033 - 1038. BibTeX |
| 987. | R. Orio, H. Ceric, J. Cervenka, S. Selberherr: "Electromigration Failure Development in Modern Dual-Damascene Interconnects"; Talk: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 12.10.2009 - 14.10.2009; in "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", (2009), 15, ISBN: 978-3-90188-237-1, 5 page(s) . BibTeX |
| 986. | V. Sverdlov, T. Windbacher, O. Baumgartner, S. Selberherr: "Electron Subband Structure and Valley Splitting in Silicon Ultra-Thin Body SOI Structures from the Two-Band k.p Model"; Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Göteborg; 19.01.2009 - 21.01.2009; in "EUROSOI 2009 Conference Proceedings", (2009), 81 - 82. BibTeX |
| 985. | V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovski, S. Selberherr: "Enhanced by Shear Strain Splitting of Unprimed Subbands in (001) Silicon Films and Point Contacts"; Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Cracow; 07.07.2009 - 11.07.2009; in "Abstracts of the International Conference on Spintronics and Quantum Information Technology (SPINTECH)", (2009), 301. BibTeX |
| 984. | I. Starkov, S. E. Tyaginov, T. Grasser: "Green´s Function Asymptotic in Two-Layered Periodic Medium"; Talk: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 22.06.2009 - 26.06.2009; in "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), 111 - 112. BibTeX |
| 983. | S. Vitanov, V. Palankovski, S. Maroldt, R. Quay: "High-Temperature Modeling of AlGaN/GaN HEMTs"; Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 09.12.2009 - 11.12.2009; in "2009 International Semiconductor Device Research Symposium", (2009), ISBN: 978-1-4244-6031-1, 2 page(s) doi:10.1109/ISDRS.2009.5378300. BibTeX |
| 982. | V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr: "Impact of Confinement and Stress on the Subband Parameters in Ultra-Thin Silicon Films"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 31.08.2009 - 03.09.2009; in "ECS Transactions", (2009), ISBN: 978-1-56677-737-7, 389 - 396. BibTeX |
| 981. | V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr: "Impact of Confinement of Semiconductor and Band Engineering on Future Device Performance"; Talk: Meeting of the Electrochemical Society, Silicon-on-Insulator Technology and Devices, San Francisco; (invited) 24.05.2009 - 29.05.2009; in "215th ECS Meeting", (2009), 19/4, ISBN: 978-1-56677-712-4, 15 - 26. BibTeX |
| 980. | S. E. Tyaginov, V. Sverdlov, W. Gös, T. Grasser: "Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 05.10.2009 - 09.10.2009; in "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009), . BibTeX |
| 979. | J. Franco, B. Kaczer, A. Stesmans, V. Afanas´Ev, K. Martens, M. Aoulaiche, T. Grasser, J. Mitard, G. Groeseneken: "Impact of Si-Passivation Thickness and Processing on NBTI Reliability of Ge and SiGe pMOSFETs"; Talk: 40th Semiconductor Interface Specialists Conference (SISC), Washington; 03.12.2009 - 05.12.2009; . BibTeX |
| 978. | S. E. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser: "Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics"; Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 13.04.2009 - 17.04.2009; in "Proceedings of the 2009 MRS Spring Meeting", (2009), . BibTeX |
| 977. | S. Vitanov, V. Palankovski: "Influence of the Gate Recess on the Performance of Enhancement-Mode AlGaN/GaN HEMTs"; Talk: International Scientific and Applied Science Conference (ET), Sozopol; 14.09.2009 - 17.09.2009; in "Annual Journal of Electronics", (2009), ISSN: 1313-1842, 144 - 147. BibTeX |
| 976. | M. Pourfath, S. Selberherr: "Modeling Optical Sensors Based on Carbon Nanotubes"; Talk: International Symposium on Microwave and Optical Technology (ISMOT), New Delhi; (invited) 16.12.2009 - 19.12.2009; in "Proceedings of the International Symposium on Microwave and Optical Technology (ISMOT)", (2009), 1381 - 1384. BibTeX |
| 975. | V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr: "Modeling Techniques for Strained CMOS Technology"; Talk: Meeting of the Electrochemical Society, ULSI Process Integration, Vienna; (invited) 04.10.2009 - 09.10.2009; in "216th ECS Meeting", (2009), ISBN: 978-1-56677-744-5, 3 - 18. BibTeX |
| 974. | T. Windbacher, V. Sverdlov, S. Selberherr: "Modeling of Low Concentrated Buffer DNA Detection with Suspend Gate Field-Effect Transistors (SGFET)"; Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 169 - 172 doi:10.1109/IWCE.2009.5091122. BibTeX |
| 973. | B. Kaczer, T. Grasser, J. Martin-Martinez, E. Simoen, M. Aoulaiche, Ph. J. Roussel, G. Groeseneken: "NBTI from the Perspective of Defect States with Widely Distributed Time Scales"; Talk: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 55 - 60. BibTeX |
| 972. | G. Milovanovic, H. Kosina: "Nonparabolicity Effects in Quantum Cascade Lasers"; Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 189 - 192 doi:10.1109/IWCE.2009.5091129. BibTeX |
| 971. | O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina: "Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB Devices"; Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 53 - 56 doi:10.1109/IWCE.2009.5091131. BibTeX |
| 970. | O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina: "Numerical Study of the Electron Subband Structure in Strained Silicon UTB Devices"; Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Göteborg; 19.01.2009 - 21.01.2009; in "EUROSOI 2009 Conference Proceedings", (2009), 57 - 58. BibTeX |
| 969. | T. Aichinger, M. Nelhiebel, T. Grasser: "On the Temperature Dependence of NBTI Recovery"; Talk: International Reliability Physics Symposium (IRPS), Montreal; (invited) 26.04.2009 - 30.04.2009; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 1. BibTeX |
| 968. | Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser: "On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 05.10.2009 - 09.10.2009; in "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009), 4 page(s) . BibTeX |
| 967. | R. Southwick III, B. Knowlton, B. Kaczer, T. Grasser: "On the Thermal Activation of Negative Bias Temperature Instability"; Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 18.10.2009 - 22.10.2009; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8, 36 - 41. BibTeX |
| 966. | M. Nedjalkov, P. Schwaha, O. Baumgartner, S. Selberherr: "Particle Model of the Scattering-Induced Wigner Function Correction"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 04.06.2009 - 08.06.2009; in "Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC)", (2009), 79. BibTeX |
| 965. | M. Pourfath, O. Baumgartner, H. Kosina, S. Selberherr: "Performance Evaluation of Graphene Nanoribbon Infrared Photodetectors"; Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Gwangju; 14.09.2009 - 17.09.2009; in "Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices", (2009), ISBN: 978-1-4244-4180-8, 13 - 14. BibTeX |
| 964. | V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr: "Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Ultra-Thin Films"; Talk: 2009 Silicon Nanoelectronics Workshop, Kyoto; 13.06.2009 - 14.06.2009; in "Proceedings of 2009 Silicon Nanoelectronics Workshop", (2009), 95 - 96. BibTeX |
| 963. | T. Grasser: "Physical Mechanisms and Modeling of the Bias Temperature Instability"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon; 05.10.2009 - 09.10.2009; . BibTeX |
| 962. | P.-J. Wagner, T. Aichinger, T. Grasser, M. Nelhiebel, L.K.J. Vandamme: "Possible Correlation between Flicker Noise and Bias Temperature Stress"; Talk: International Conference on Noise and Fluctuations (ICNF), Pisa; 14.06.2009 - 19.06.2009; in "Proceedings of the 20th International Conference on Noise and Fluctuations", (2009), 621 - 624. BibTeX |
| 961. | N. Neophytou, H. Kosina, T. Rakshit: "Quantum Transport Simulations of InGaAs HEMTs: Influence of Mass Variations on the Device Performance"; Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 161 - 164 doi:10.1109/IWCE.2009.5091141. BibTeX |
| 960. | V. Sverdlov, S. Selberherr: "Scaling of Advanced Floating Body Z-RAM Storage Cells: A Modeling Approach"; Poster: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 12.10.2009 - 14.10.2009; in "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", (2009), 21, ISBN: 978-3-90188-237-1, 4 page(s) . BibTeX |
| 959. | S. E. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser: "Si-O Bond-Breakage Energetics under Consideration of the Whole Crystal"; Talk: International Semiconductor Technology Conference & China Semiconductor Technology International Conference, Shanghai; 19.03.2009 - 20.03.2009; in "Proceedings of the International Semiconductor Technology Conference & China Semiconductor Technology International Conference", (2009), 84. BibTeX |
| 958. | V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr: "Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting"; Poster: Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads, Sardinia; 14.06.2009 - 19.06.2009; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads", (2009), 58. BibTeX |
| 957. | G. Milovanovic, O. Baumgartner, H. Kosina: "Simulation of Quantum Cascade Lasers using Robin Boundary Conditions"; Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Gwangju; 14.09.2009 - 17.09.2009; in "Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices", (2009), ISBN: 978-1-4244-4180-8, 7 - 8. BibTeX |
| 956. | S. E. Tyaginov, V. Sverdlov, W. Gös, T. Grasser: "Statistics of Si-O Bond-Breakage Rate Variations induced by O-Si-O Angle Fluctuations"; Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 29 - 32 doi:10.1109/IWCE.2009.5091156. BibTeX |
| 955. | S. Selberherr: "Strain Engineering in CMOS Devices"; Talk: IEEE EDS Distinguished Lecture, University of Sao Paulo, Sao Paulo, Brasil; (invited) 04.02.2009. BibTeX |
| 954. | T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer: "Study of the Properties of Biotin-Streptavidin Sensitive BioFETs"; Talk: 2nd International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC), Porto, Portugal; 14.01.2009 - 17.01.2009; in "Proceedings of the International Conference on Biomedical Electronics and Devices (BIODEVICES)", (2009), ISBN: 978-989-8111-72-2, 24 - 30. BibTeX |
| 953. | T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer: "Study of the Properties of Biotin-Streptavidin Sensitive Biofets"; Talk: 2nd International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC), Porto; 14.01.2009 - 17.01.2009; in "Final Program and Book of Abstracts", (2009), 42. BibTeX |
| 952. | V. Sverdlov, O. Baumgartner, S. Selberherr: "Subband Parameters in Strained (110) Silicon Films from the Hensel-Hasegawa-Nakayama Model of the Conduction Band"; Talk: International Semiconductor Device Research Symposium (ISDRS), College Park; 09.12.2009 - 11.12.2009; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS)", (2009), ISBN: 978-1-4244-6031-1, TP6-03.1 - 2. BibTeX |
| 951. | V. Sverdlov, O. Baumgartner, S. E. Tyaginov, T. Windbacher, S. Selberherr: "Subband Structure in Ultra-Thin Silicon Films"; Talk: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 22.06.2009 - 26.06.2009; in "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), 62 - 63. BibTeX |
| 950. | T. Grasser, H. Reisinger, W. Gös, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, M. Nelhiebel, J. Franco, B. Kaczer: "Switching Oxide Traps as the Missing Link Between Negative Bias Temperature Instability and Random Telegraph Noise"; Talk: IEEE International Electron Devices Meeting (IEDM), Baltimore, MD, USA; 07.12.2009 - 09.12.2009; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2009), 1 - 4 doi:10.1109/IEDM.2009.5424235. BibTeX |
| 949. | R. Orio, H. Ceric, J. Cervenka, S. Selberherr: "The Effect of Copper Grain Size Statistics on the Electromigration Lifetime Distribution"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 182 - 185 doi:10.1109/SISPAD.2009.5290219. BibTeX |
| 948. | H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "The Effect of Microstructure on Electromigration Induced Voids"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 06.07.2009 - 10.07.2009; in "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2009), ISBN: 9781-4244-3912-6, 694 - 697. BibTeX |
| 947. | R. Orio, H. Ceric, J. Cervenka, S. Selberherr: "The Effect of Microstructure on Electromigration-Induced Failure Development"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 31.08.2009 - 03.09.2009; in "ECS Transactions", (2009), ISBN: 978-1-56677-737-7, 345 - 352. BibTeX |
| 946. | R. Orio, H. Ceric, J. Cervenka, S. Selberherr: "The Effect of Microstructure on the Electromigration Lifetime Distribution"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 06.07.2009 - 10.07.2009; in "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2009)", (2009), 731 - 734. BibTeX |
| 945. | P. Schwaha, R. Heinzl, M. Nedjalkov: "The Forced Evolution of Implementations: Using a Monte Carlo Algorithm as Example"; Talk: European Conference on Object-Oriented Programming, Genova; 07.07.2009 in "Proceedings of the 8th workshop on Parallel/High-Performance", (2009), ISBN: 978-1-60558-547-5, . BibTeX |
| 944. | V. Sverdlov, O. Baumgartner, H. Kosina, S. Selberherr, F. Schanovsky, D. Esseni: "The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers"; Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 49 - 52 doi:10.1109/IWCE.2009.5091158. BibTeX |
| 943. | M. Pourfath, H. Kosina, S. Selberherr: "Theoretical Study of Graphene Nanoribbon Photo-Detectors"; Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kaanapali; 30.11.2009 - 04.12.2009; in "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2009), 178 - 179. BibTeX |
| 942. | V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr: "Thickness Dependence of the Effective Masses in a Strained Thin Silicon Film"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 51 - 54 doi:10.1109/SISPAD.2009.5290252. BibTeX |
| 941. | O. Ertl, S. Selberherr: "Three-Dimensional Plasma Etching Simulation using Advanced Ray Tracing and Level Set Techniques"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 31.08.2009 - 03.09.2009; in "ECS Transactions", (2009), ISBN: 978-1-56677-737-7, 61 - 68. BibTeX |
| 940. | H. Kosina: "Transport Modeling for Nanowires and Nanotubes"; Talk: Final FoNE Conference, Miraflores de la Sierra, Madrid; 09.09.2009 - 13.09.2009; in "Proceedings of the Final FoNE Conference", (2009), 35. BibTeX |
| 939. | V. Sverdlov, M. Vasicek, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr: "Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 04.06.2009 - 08.06.2009; in "Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC)", (2009), 93. BibTeX |
| 938. | T. Aichinger, M. Nelhiebel, T. Grasser: "Unambiguous Identification of the NBTI Recovery Mechanism using Ultra-Fast Temperature Changes"; Talk: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 2 - 7. BibTeX |
| 937. | T. Grasser: "Understanding Negative Bias Temperature Instability in the Context of Hole Trapping"; Talk: International Conference on Insulating Films on Semiconductors (INFOS), Cambridge; (invited) 29.06.2009 - 01.07.2009; . BibTeX |
| 936. | V. Sverdlov, T. Windbacher, O. Baumgartner, F. Schanovsky, S. Selberherr: "Valley Splitting in Thin Silicon Films from a Two-Band k·p Model"; Poster: International Conference on Ultimate Integration of Silicon (ULIS), Aachen; 18.03.2009 - 20.03.2009; in "Proceedings of the 10th International Conference on Ultimate Integration of Silicon", (2009), 277 - 280. BibTeX |
| 935. | J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair: "What Triggers NBTI? An "On The Fly" Electron Spin Resonance Approach"; Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 18.10.2009 - 22.10.2009; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8, 42 - 45. BibTeX |
| 934. | F. Stimpfl, R. Heinzl, P. Schwaha, S. Selberherr: "A Delaunay Mesh Generation Approach without the Use of Convex Hulls"; Talk: Intl. Conf. on Numerical Geometry, Grid Generation and Scientific Computing (Numgrid), Moscow, Russia; 10.06.2008 - 13.06.2008; in "Proceedings Intl. Conf.on Numerical Geometry, Grid Generation and Scientific Computing", (2008), 2 page(s) . BibTeX |
| 933. | T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger: "A General Bottom-Up Modeling Approach for BioFETs"; Poster: 2. Internationale Konferenz NanoSens2008, Vienna; 29.09.2008 - 30.09.2008; in "Abstracts Conf.on Nanosensors for Industrial Applications (NANOSENS)", (2008), . BibTeX |
| 932. | A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr: "A Numerical Study of Graphene Nano-Ribbon based Resonant Tunneling Diodes"; Talk: International Symposium on Graphene Devices: Technology, Physics, and Modeling (ISGD), Japan; 17.11.2008 - 19.11.2008; in "International Symposium on Graphene Devices: Technology, Physics, and Modeling", (2008), 66 - 67. BibTeX |
| 931. | P. Schwaha, F. Stimpfl, R. Heinzl, S. Selberherr: "A Parallel Delaunay and Advancing Front Mesh Generation Approach"; Talk: Intl. Conf. on Numerical Geometry, Grid Generation and Scientific Computing (Numgrid), Moscow, Russia; 10.06.2008 - 13.06.2008; in "Proceedings Intl. Conf.on Numerical Geometry, Grid Generation and Scientific Computing", (2008), 2 page(s) . BibTeX |
| 930. | R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr: "A Parallel Generic Scientific Simulation Environment"; Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Trondheim; 13.05.2008 - 16.05.2008; in "Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing", (2008), . BibTeX |
| 929. | W. Gös, M. Karner, V. Sverdlov, T. Grasser: "A Rigorous Model for Trapping and Detrapping in Thin Gate Dielectrics"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 07.07.2008 - 11.07.2008; in "Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1, 249 - 254. BibTeX |
| 928. | F. Stimpfl, R. Heinzl, P. Schwaha, S. Selberherr: "A Robust Parallel Delaunay Mesh Generation Approach Suitable for Three-Dimensional TCAD"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 265 - 268 doi:10.1109/SISPAD.2008.4648288. BibTeX |
| 927. | T. Grasser, B. Kaczer, W. Gös: "An Energy-Level Perspective of Bias Temperature Instability"; Talk: International Reliability Physics Symposium (IRPS), Phoenix; 27.04.2008 - 01.05.2008; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2008), 28 - 38. BibTeX |
| 926. | T. Grasser, B. Kaczer, W. Gös: "An Energy-Level Perspective of Bias Temperature Instability"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht; (invited) 29.09.2008 - 02.10.2008; in "Proceedings of the 19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2008), . BibTeX |
| 925. | M. Pourfath, S. Selberherr: "Analysis of Carbon Nanotube Photo-Detectors"; Talk: Advanced Heterostructures and Nanostructures Workshop (AHNW), Kona; (invited) 07.12.2008 - 12.12.2008; in "Abstracts Advanced Heterostructures and Nanostructures Workshop (AHNW)", (2008), TU-06. BibTeX |
| 924. | R. Orio, S. Carniello, H. Ceric, S. Selberherr: "Analysis of Electromigration in Dual-Damascene Interconnect Structures"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Gramado; 01.09.2008 - 04.09.2008; in "ECS Transactions", (2008), ISBN: 978-1-56677-646-2, 337 - 348. BibTeX |
| 923. | R. Orio, H. Ceric, S. Carniello, S. Selberherr: "Analysis of Electromigration in Redundant Vias"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 237 - 240 doi:10.1109/SISPAD.2008.4648281. BibTeX |
| 922. | H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "Analysis of Microstructure Impact on Electromigration"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 241 - 244 doi:10.1109/SISPAD.2008.4648282. BibTeX |
| 921. | C. Poschalko, S. Selberherr: "Calculation of the Radiation from the Slot of a Slim Enclosure with a Cavity Resonator Model"; Talk: International Zurich Symposium on Electromagnetic Compatibility, Singapore; 19.05.2008 - 22.05.2008; in "19th International Zurich Symposium on Electromagnetic Compatibility,", (2008), 634 - 637. BibTeX |
| 920. | S. Selberherr: "Challenges of the Nanoscale Era"; Talk: IEEE EDS Mini-Colloquium Distinguished Lecture, Hotel Serra Azul, Gramado, Brasil; (invited) 01.09.2008. BibTeX |
| 919. | H. Ceric, R. Orio, S. Selberherr: "Comprehensive Modeling of Electromigration Induced Interconnect Degradation Mechanisms"; Talk: International Conference on Microelectronics (MIEL), Nis; (invited) 11.05.2008 - 14.05.2008; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2008), ISBN: 978-1-4244-1881-7, 69 - 76 doi:10.1109/ICMEL.2008.4559225. BibTeX |
| 918. | M. Vasicek, J. Cervenka, M. Karner, T. Grasser: "Consistent Higher-Order Transport Models for SOI MOSFETs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 129 - 132 doi:10.1109/SISPAD.2008.4648254. BibTeX |
| 917. | O. Baumgartner, P. Schwaha, M. Karner, M. Nedjalkov, S. Selberherr: "Coupling of Non-Equilibrium Green's Function and Wigner Function Approaches"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 345 - 348 doi:10.1109/SISPAD.2008.4648308. BibTeX |
| 916. | M. Pourfath, H. Kosina, S. Selberherr: "Current Transport in Carbon Nanotube Transistors"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Beijing; (invited) 20.10.2008 - 23.10.2008; in "The 9th Internationl Conference on Solid-State and Integrated-Circuit Technology", (2008), ISBN: 978-1-4244-2186-2, 361 - 364. BibTeX |
| 915. | M. Pourfath, S. Selberherr: "Current Transport in Carbon Nanotube Transistors"; Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Cancun; (invited) 28.04.2008 - 30.04.2008; in "Proceedings of the 7th International Caribbean Conference on Devices, Circuits and Systems", (2008), ISBN: 978-1-4244-1957-9, 6 page(s) . BibTeX |
| 914. | T. Grasser, B. Kaczer, T. Aichinger, W. Gös, M. Nelhiebel: "Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks"; Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 18.10.2008 - 22.10.2008; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2008), 91 - 95. BibTeX |
| 913. | T. Grasser: "Device Simulation Based on the Statistical Moments of the Boltzmann Transport Equation"; Talk: 3rd SINANO Device Modeling Summer School, Bertinoro, Italy; 01.09.2008 - 05.09.2008; . BibTeX |
| 912. | C. Poschalko, S. Selberherr: "Domain Separation with Port Interfaces for Calculation of Emissions from Enclosure Slots"; Talk: International Symposium on Electromagnetic Compatibility (EMC), Detroit; 18.08.2008 - 22.08.2008; in "Proceedings International Symposium on Electromagnetic Compatibility", (2008), 1113, ISBN: 978-1-4244-1699-8, doi:10.1109/ISEMC.2008.4652083. BibTeX |
| 911. | S. E. Tyaginov, M. Vexler, A. El Hdiy, K. Gacem, V Zaporojtchenko: "Electrical Methods for Estimating the Correlation Length of Insulator Thickness Fluctuations in MIS Tunnel Structures"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Berlin; 23.06.2008 - 25.06.2008; in "15th Workshop on Dielectrics in Microelectronics", (2008), 227 - 228. BibTeX |
| 910. | V. Sverdlov, H. Kosina, S. Selberherr: "Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond"; Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Cork; 23.01.2008 - 25.01.2008; in "Proceedings of the 4th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2008), 41 - 42. BibTeX |
| 909. | S. Vitanov, V. Palankovski: "Enhancement Mode HEMTs: Evaluation of Two Approaches by Numerical Simulation"; Talk: Junior Scientist Conference 2008, Technische Universität Wien; 17.11.2008 - 18.11.2008; in "Junior Scientist Conference Proceedings", (2008), ISBN: 978-3-200-01612-5, 221 - 222. BibTeX |
| 908. | F. Stimpfl, R. Heinzl, P. Schwaha, S. Selberherr: "High Performance Parallel Mesh Generation and Adaption"; Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Trondheim; 13.05.2008 - 16.05.2008; in "Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing", (2008), . BibTeX |
| 907. | W. Gös, M. Karner, S. E. Tyaginov, Ph. Hehenberger, T. Grasser: "Level Shifts and Gate Interfaces as Vital Ingredients in Modeling of Charge Trapping"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 69 - 72 doi:10.1109/SISPAD.2008.4648239. BibTeX |
| 906. | V. Sverdlov, T. Windbacher, S. Selberherr: "Mobility Enhancement in Thin Silicon Films: Strain and Thickness Dependences of the Effective Masses and Non-Parabolicity Parameter"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 145 - 148 doi:10.1109/SISPAD.2008.4648258. BibTeX |
| 905. | V. Sverdlov, S. Selberherr: "Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Gramado; 01.09.2008 - 04.09.2008; in "ECS Transactions", (2008), ISBN: 978-1-56677-646-2, 159 - 168. BibTeX |
| 904. | T. Grasser, W. Gös, B. Kaczer: "Modeling Bias Temperature Instability During Stress and Recovery"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 65 - 68 doi:10.1109/SISPAD.2008.4648238. BibTeX |
| 903. | M. Pourfath, S. Selberherr: "Modeling Current Transport in Carbon Nanotube Transistors"; Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; (invited) 08.12.2008 - 10.12.2008; in "IEEE International Conference on Electron Devices and Solid-State Circuit 2008", (2008), ISBN: 978-1-4244-2540-2, 6 page(s) . BibTeX |
| 902. | V. Sverdlov, S. Selberherr: "Modeling and Simulation of Advanced Floating Body Z-RAM Memory Cells"; Talk: European Simulation and Modeling Conference (ESMC), Le Havre; 27.10.2008 - 29.10.2008; in "Proceedings European Simulation and Modeling Conference (ESM)", (2008), ISBN: 978-90-77381-44-1, 380 - 384. BibTeX |
| 901. | O. Baumgartner, M. Karner, H. Kosina: "Modeling of High-k-Metal-Gate-Stacks Using the Non-Equilibrium Green´s Function Formalism"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 353 - 356 doi:10.1109/SISPAD.2008.4648310. BibTeX |
| 900. | T. Grasser: "Negative Bias Temperature Instability: Modeling Challenges and Perspectives"; Talk: International Reliability Physics Symposium (IRPS), Phoenix (Tutorial); 27.04.2008 - 01.05.2008; in "2008 Reliability Physics Tutorial Notes", (2008), 113 - 120. BibTeX |
| 899. | V. Palankovski: "Novel High-Performance GaN Transistors"; Talk: Advanced Heterostructures and Nanostructures Workshop (AHNW), Kona; (invited) 07.12.2008 - 12.12.2008; in "Abstracts Advanced Heterostructures and Nanostructures Workshop (AHNW)", (2008), MO-03. BibTeX |
| 898. | M. Pourfath, H. Kosina: "Numerical Study of Carbon Nanotube Infra-Red Photo-Detectors"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 81 - 84 doi:10.1109/SISPAD.2008.4648242. BibTeX |
| 897. | M. Pourfath, O. Baumgartner, H. Kosina: "On the Non-locality of the Electron-Photon Self-Energy: Application to Carbon Nanotube Photo-Detectors"; Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Nottingham; 01.09.2008 - 04.09.2008; in "Proceedings of the 8^{th} International Conference on Numerical Simulation of Optoelectronic Devices", (2008), ISBN: 978-1-4244-2307-1, 99 - 100 doi:10.1109/NUSOD.2008.4668261. BibTeX |
| 896. | M. Pourfath, V. Sverdlov, H. Kosina: "On the Role of Off‐Diagonal Dephasing in Carbon Nanotube Based Photo‐Detectors"; Talk: 1st FoNE Conference Nanoelectronics 2008, Taormina, Italy; 29.06.2008 - 03.07.2008; in "1st Fone Conference Nanoelectronics 2008", (2008), 41. BibTeX |
| 895. | T. Aichinger, M. Nelhiebel, T. Grasser: "On the Temperature Dependence of NBTI Recovery"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht; 29.09.2008 - 02.10.2008; . BibTeX |
| 894. | R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr: "Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment"; Talk: Workshop on Parallel Object-Oriented Scientific Computing (POOSC), Paphos; 08.07.2008 in "7th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing (POOSC'08)", (2008), 5 page(s) . BibTeX |
| 893. | S. Selberherr: "Process Simulation for Modern Microelectronics Technologies"; Talk: IEEE EDS Distinguished Lecture, University of Sao Paulo, Sao Paulo, Brasil; (invited) 13.02.2008. BibTeX |
| 892. | C. Poschalko, S. Selberherr: "Radiated Emission from the Slot of a Slim Cubical Enclosure with Multiple Sources Inside"; Talk: International Symposium on Electromagnetic Compatibility (EMC), Hamburg; 08.09.2008 - 12.09.2008; in "Proceedings of the 8th International Symposium on Electromagnetic Compatibility", (2008), ISBN: 978-3-930400-60-7, 109 - 114. BibTeX |
| 891. | M. Pourfath, H. Kosina, S. Selberherr: "Reduction of the Dark-Current in Carbon Nanotube Photo-Detectors"; Talk: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 15.09.2008 - 19.09.2008; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2008), 214 - 217. BibTeX |
| 890. | S. Vitanov, V. Palankovski: "Simulation of AlGaN/GaN HEMTs with InGaN Cap Layer"; Talk: International Scientific and Applied Science Conference (ET), Sozopol; 24.09.2008 - 26.09.2008; in "The Seventeenth International Scientific and Applied Science Conference Electronics ET'2008 Proceedings of the Conference Book 4", (2008), ISSN: 1313-1842, 67 - 70. BibTeX |
| 889. | T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer: "Simulation of Field-Effect Biosensors (BioFETs)"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 193 - 196 doi:10.1109/SISPAD.2008.4648270. BibTeX |
| 888. | T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer: "Simulation of Field-Effect Biosensors (BioFETs) for Biotin-Streptavidin Complexes"; Poster: International Conference on Physics of Semiconductor (ICPS), Rio de Janeiro; 27.07.2008 - 01.08.2008; in "PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors", (2008), ISBN: 978-0-7354-0736-7, 507 - 508. BibTeX |
| 887. | V. Sverdlov, S. Selberherr: "Strain-Controlled Valley Splitting in Si-SiGe Heterostructures"; Talk: International SiGe Technology and Device Meeting (ISTDM), Hsinchu; 11.05.2008 - 14.05.2008; in "Abstract Book", (2008), 20 - 21. BibTeX |
| 886. | H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "Stress-Induced Anisotropy of Electromigration in Copper Interconnects"; Talk: International Workshop on Stress-Induced Phenomena in Metallization, Austin; 05.11.2008 - 07.11.2008; in "Proceedings of the Stress-Induced Phenomena in Metallization: 10th International Workshop", (2008), ISBN: 978-0-7354-0680-3, 56 - 62. BibTeX |
| 885. | V. Sverdlov, T. Windbacher, H. Kosina, S. Selberherr: "Stress-Induced Valley Splitting in Silicon Thin Films"; Talk: International Conference on Ultimate Integration of Silicon (ULIS), Udine; 12.03.2008 - 14.03.2008; in "Proceedings of the 9th International Conference on Ultimate Integration on Silicon", (2008), ISBN: 978-1-4244-1730-8, 93 - 96. BibTeX |
| 884. | P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr: "Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages"; Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Trondheim; 13.05.2008 - 16.05.2008; in "Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing", (2008), . BibTeX |
| 883. | P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr: "Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications"; Talk: Workshop on Parallel Object-Oriented Scientific Computing (POOSC), Paphos; 08.07.2008 in "7th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing (POOSC'08)", (2008), 6 page(s) . BibTeX |
| 882. | S. Vitanov, V. Palankovski, G. Pozzovivo, J. Kuzmik, R. Quay: "Systematical Study of InAlN/GaN Devices by Numerical Simulation"; Talk: European Workshop on Heterostructure Technology, Venice; 03.11.2008 - 05.11.2008; in "HETECH 2008 Book of Abstracts", (2008), ISBN: 978-88-6129-296-3, 159 - 160. BibTeX |
| 881. | H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "TCAD Solutions for Submicron Copper Interconnect"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 07.07.2008 - 11.07.2008; in "Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1, 78 - 81. BibTeX |
| 880. | H. Reisinger, R. Vollertsen, P.-J. Wagner, T. Huttner, A. Martin, S. Aresu, W. Gustin, T. Grasser, C. Schlünder: "The Effect of Recovery on NBTI Characterization of Thick Non-Nitrided Oxides"; Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 18.10.2008 - 22.10.2008; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2008), 1 - 6. BibTeX |
| 879. | O. Ertl, S. Selberherr: "Three-Dimensional Topography Simulation Using Advanced Level Set and Ray Tracing Methods"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 325 - 328 doi:10.1109/SISPAD.2008.4648303. BibTeX |
| 878. | T. Grasser: "Towards Understanding Negative Bias Temperature Instability"; IEEE Conference Proceedings, in "Integrated Reliability Workshop Final Report (12-16 Oct. 2008)", (2008), 145 doi:10.1109/IRWS.2008.4796110. BibTeX |
| 877. | S. Vitanov, P. Vitanov, V. Palankovski: "Two-Dimensional Numerical Optimization of MIS Solar Cell on N-Type Silicon"; Poster: European Photovoltaic Solar Energy Conference, Valencia; 01.09.2008 - 05.09.2008; in "23rd European Photovoltaic Solar Energy Conference", (2008), 1743 - 1745. BibTeX |
| 876. | B. Kaczer, T. Grasser, Ph. J. Roussel, J. Martin-Martinez, R. O´Connor, B. O´Sullivan, G. Groeseneken: "Ubiquitous Relaxation in BTI Stressing-New Evaluation and Insights"; Talk: International Reliability Physics Symposium (IRPS), Phoenix; 27.04.2008 - 01.05.2008; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2008), 20 - 27. BibTeX |
| 875. | S. Okhonin, M. Nagoga, C. Lee, J. Colinge, A. Afzalian, R. Yan, N. Akhavan, W. Xiong, V. Sverdlov, S. Selberherr, C. Mazure: "Ultra-Scaled Z-RAM Cell"; Talk: 2008 IEEE International SOI Conference, New Paltz; 06.10.2008 - 09.10.2008; in "2008 IEEE International SOI Conference Proceedings", (2008), ISBN: 978-1-4244-1954-8, 157 - 158. BibTeX |
| 874. | G. Milovanovic, H. Kosina: "Valence Band Deformation Potentials in Semiconductors"; Poster: International SiGe Technology and Device Meeting (ISTDM), Hsinchu; 11.05.2008 - 14.05.2008; in "Abstract Book", (2008), 215 - 216. BibTeX |
| 873. | M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser: "A 2D-Non-Parabolic Six Moments Model"; Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) . BibTeX |
| 872. | P. Schwaha, R. Heinzl, G. Mach, C. Pogoreutz, S. Fister, S. Selberherr: "A High Performance Webapplication for an Electro-Biological Problem"; Talk: 21st European Conference on Modelling and Simulation, Prag; 04.06.2007 - 06.06.2007; in "Proceedings 21st European Conference on Modelling and Simulation", (2007), ISBN: 978-0-9553018-2-7, 218 - 222 doi:10.7148/2007-0218. BibTeX |
| 871. | F. Stimpfl, R. Heinzl, P. Schwaha, S. Selberherr: "A Multi-Mode Mesh Generation Approach for Scientific Computing"; Talk: The European Simulation and Modelling Conference (ESM), Malta; 22.10.2007 - 24.10.2007; in "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6, 506 - 513. BibTeX |
| 870. | R. Heinzl, G. Mach, P. Schwaha, S. Selberherr: "A Performance Test Platform"; Talk: The European Simulation and Modelling Conference (ESM), Malta; 22.10.2007 - 24.10.2007; in "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6, 483 - 487. BibTeX |
| 869. | T. Grasser, P.-J. Wagner, Ph. Hehenberger, W. Gös, B. Kaczer: "A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability"; Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 15.10.2007 - 18.10.2007; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2007), ISBN: 1-4244-1171-8, 6 - 11. BibTeX |
| 868. | O. Baumgartner, M. Karner, S. Holzer, M. Pourfath, T. Grasser, H. Kosina: "Adaptive Energy Integration of Non-Equilibrium Green´s Functions"; Poster: The Nanotechnology Conference and Trade Show, Santa Clara; 19.05.2007 - 24.05.2007; in "NSTI Nanotech Proceedings", (2007), 3, ISBN: 1-4200-6184-4, 145 - 148. BibTeX |
| 867. | H. Kosina, O. Triebl, T. Grasser: "Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions"; Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 317 - 320 doi:10.1007/978-3-211-72861-1_76. BibTeX |
| 866. | L. Li, G. Meller, H. Kosina: "Charge Injection Model for Organic Light-Emitting Diodes"; Talk: International Conference on Organic Electronics (ICOE), Eindhoven; 04.06.2007 - 07.06.2007; in "International Conference on Organic Electronics", (2007), . BibTeX |
| 865. | L. Li, G. Meller, H. Kosina: "Charge Injection Model in Organic Light-Emitting Diodes based on a Master Equation"; Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 377 - 380 doi:10.1007/978-3-211-72861-1_91. BibTeX |
| 864. | K. Martens, B. Kaczer, T. Grasser, B. De Jaeger, M. Meuris, G. Groeseneken, H.E. Maes: "Charge Pumping Charcaterization of Germanium MOSFETs"; Talk: Semiconductor Interface Specialists Conference (SISC), Arlington; 06.12.2007 - 08.12.2007; . BibTeX |
| 863. | W. Gös, T. Grasser: "Charging and Discharging of Oxide Defects in Reliability Issues"; Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 15.10.2007 - 18.10.2007; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2007), ISBN: 1-4244-1171-8, 27 - 32. BibTeX |
| 862. | V. Sverdlov, H. Kosina, S. Selberherr: "Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon"; Talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod; 01.10.2007 - 05.10.2007; in "International Conference "Micro and Nanoelectronics - 2007" Book of Abstracts", (2007), O1-14, . BibTeX |
| 861. | V. Sverdlov, H. Kosina, S. Selberherr: "Conduction Band in Silicon: Numerical Versus Analytical Two-Band k·p Model"; Talk: Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics (ETAI), Ohrid, Macedonia; 19.09.2007 - 21.09.2007; in "8th Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics", (2007), 4 page(s) . BibTeX |
| 860. | G. Meller, L. Li, S. Holzer, H. Kosina: "Dynamic Monte Carlo Simulation of an Amorphous Organic Device"; Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 373 - 376 doi:10.1007/978-3-211-72861-1_90. BibTeX |
| 859. | R. Orio, H. Ceric, S. Selberherr: "Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress"; Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 08.10.2007 - 10.10.2007; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), 62 - 63. BibTeX |
| 858. | V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr: "Effects of Shear Strain on the Conduction Band in Silicon: An Efficient Two-Band k.p Theory"; Talk: European Solid-State Device Research Conference (ESSDERC), München; 11.09.2007 - 13.09.2007; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2007), ISBN: 1-4244-1124-6, 386 - 389. BibTeX |
| 857. | O. Ertl, C. Heitzinger, S. Selberherr: "Efficient Coupling of Monte Carlo and Level Set Methods for Topography Simulation"; Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 417 - 420 doi:10.1007/978-3-211-72861-1_101. BibTeX |
| 856. | P. Schwaha, R. Heinzl, G. Mach, C. Pogoreutz, S. Fister, S. Selberherr: "Electro-Biological Simulation using a Web Front-End"; Talk: The European Simulation and Modelling Conference (ESM), Malta; 22.10.2007 - 24.10.2007; in "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6, 493 - 495. BibTeX |
| 855. | H. Ceric, S. Selberherr: "Electromigration Modeling for Interconnect Structures in Microelectronics"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Rio de Janeiro; (invited) 03.09.2007 - 06.09.2007; in "ECS Transactions", (2007), ISBN: 978-1-56677-565-6, 295 - 304. BibTeX |
| 854. | H. Ceric, S. Selberherr: "Electromigration in Interconnect Structures of Microelectronic Circuits"; Talk: Microelectroncs, Electronics, and Electronic Technologies (MIPRO), Opatija; (invited) 21.05.2007 - 25.05.2007; in "Microelectronics, Electronics, and Electronic Technologies (MEET)", (2007), ISBN: 978-953-233-032-8, 23 - 28. BibTeX |
| 853. | V. Sverdlov, H. Kosina: "Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory"; Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 08.10.2007 - 10.10.2007; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), 92 - 93. BibTeX |
| 852. | A. Karaivanova, E. Atanassov, T.V. Gurov, M. Nedjalkov, D. Vasileska, K. Raleva: "Electron-Phonon Interaction in Nanowires: A Monte Carlo Study of the Effect of the Field"; Talk: Seminar on Monte Carlo Methods (MCM), Reading; 18.06.2007 - 21.06.2007; in "Proceedings of the Seminar on Monte Carlo Methods (MCM)", (2007), 23. BibTeX |
| 851. | V. Sverdlov: "Enhancing Performance of Modern MOSFETs: Strain Engineering and Advanced Device Architectures"; Talk: International Conference Frontiers of Josephson Physics and Nanoscience (FJPN07), Palinuro, Italy; 23.09.2007 - 28.09.2007; in "7th International Conference Frontiers of Josephson Physics and Nanoscience", (2007), 63 - 64. BibTeX |
| 850. | W. Gös, T. Grasser: "First-Principles Investigation on Oxide Trapping"; Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 157 - 160 doi:10.1007/978-3-211-72861-1_38. BibTeX |
| 849. | T. Grasser, M. Vasicek, M. Wagner: "Higher-Order Moment Models for Engineering Applications"; Talk: Equadiff, Wien; 05.08.2007 - 11.08.2007; . BibTeX |
| 848. | S. Vitanov, V. Palankovski, S. Murad, T. Rödle, R. Quay, S. Selberherr: "Hydrodynamic Modeling of AlGaN/GaN HEMTs"; Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 273 - 276 doi:10.1007/978-3-211-72861-1_65. BibTeX |
| 847. | H. Kosina, V. Sverdlov: "Impact of Strain and Defects on CMOS Process and Device Performance"; Talk: 15thBiannual Conference Insulating Films on Semiconductors (INFOS-2007), Glyfada Athens, Greece; (invited) 20.06.2007 - 23.06.2007; . BibTeX |
| 846. | V. Sverdlov, G. Karlowatz, E. Ungersböck, H. Kosina: "Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter"; Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 329 - 332 doi:10.1007/978-3-211-72861-1_79. BibTeX |
| 845. | V. Sverdlov, E. Ungersböck, H. Kosina: "Influence of Uniaxial [110] Stress on Silicon Band Structure and Electron Low-Field Mobility in Ultra-Thin Body SOIs"; Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Leuven; 24.01.2007 - 26.01.2007; in "EUROSOI 2007", (2007), 39 - 40. BibTeX |
| 844. | H. Ceric, A. Nentchev, E. Langer, S. Selberherr: "Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth"; Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 37 - 40 doi:10.1007/978-3-211-72861-1_9. BibTeX |
| 843. | Ch. Hollauer, H. Ceric, G. van Barel, A. Witvrouw, S. Selberherr: "Investigation of Intrinsic Stress Effects in Cantilever Structures"; Talk: IEEE Nano/Micro Engineered and Molecular Systems, Bangkok, Thailand; 16.01.2007 - 19.01.2007; in "Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems (CD ROM)", (2007), ISBN: 1-4244-0610-2, 4 page(s) . BibTeX |
| 842. | O. Triebl, T. Grasser: "Investigation of Vector Discretization Schemes for Box Volume Methods"; Talk: The Nanotechnology Conference and Trade Show, Santa Clara; 20.05.2007 - 24.05.2007; in "NSTI Nanotech Proceedings", (2007), 3, ISBN: 1-4200-6184-4, 61 - 64. BibTeX |
| 841. | M. Karner, O. Baumgartner, M. Pourfath, M. Vasicek, H. Kosina: "Investigation of a MOSCAP Using NEGF"; Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) . BibTeX |
| 840. | C. Heitzinger, Ch. Ringhofer, S. Selberherr: "Investigations of the Potential Jump at the Surface of BioFETs Using a Multi-scale Model"; Talk: Meeting of the Electrochemical Society, Multi-Scale Simulations of Electrochemical Systems, Chicago; 06.05.2007 - 10.05.2007; in "211th ECS Meeting", (2007), 0947, ISSN: 1091-8213, . BibTeX |
| 839. | R. Heinzl, G. Mach, P. Schwaha, S. Selberherr: "Labtool - A Managing Software for Computer Courses"; Talk: The European Simulation and Modelling Conference (ESM), Malta; 24.10.2007 - 27.10.2007; in "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6, 488 - 492. BibTeX |
| 838. | W. Grabinski, T. Grasser, G. Gildenblat, G.-J. Smit, M. Bucher, A. Aarts, A. Tajic, Y. S. Chauhan, A. Napieralski, T.A. Fjeldly, B. Iniguez, G. Iannaccone, M. Kayal, W. Posch, G. Wachutka, F. Prégaldiny, CH. Lallement, L. Lemaitre: "MOS-AK: Open Compact Modeling Forum"; Talk: International Workshop on Compact Modeling (IWCM), Pacifico Yokohama, Japan; (invited) 23.01.2007 in "The 4th International Workshop on Compact Modeling", (2007), 1 - 11. BibTeX |
| 837. | L. Li, G. Meller, H. Kosina: "Micro and Macroscopic Modeling of Charge Flows in Molecularly Disordered Organic Semiconductors"; Talk: SISPAD 2007 Companion Workshop 'Organic Electronics', Wien; 28.09.2007. BibTeX |
| 836. | S. Selberherr: "Microeletronics Modeling"; Talk: IEEE EDS Distinguished Lecture, Ss.Cyril and Methodius University in Skopje, Skopje, Mazedonien; (invited) 14.09.2007. BibTeX |
| 835. | S. Vitanov, V. Palankovski, R. Quay, E. Langer: "Modeling of Electron Transport in GaN-based Materials and Devices"; Poster: 28th International Conference on the Physics of Semiconductors, Wien; 24.07.2006 - 28.07.2006; in "28th International Conference on the Physics of Semiconductors", (2007), 244. BibTeX |
| 834. | M. Vasicek, M. Karner, E. Ungersböck, M. Wagner, H. Kosina, T. Grasser: "Modeling of Macroscopic Transport Parameters in Inversion Layers"; Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 201 - 204 doi:10.1007/978-3-211-72861-1_48. BibTeX |
| 833. | R. Heinzl, P. Schwaha, C. Giani, S. Selberherr: "Modeling of Non-Trivial Data-Structures with a Generic Scientific Simulation Environment"; Talk: High-End Visualization Workshop, Obergurgl; 18.06.2007 - 22.06.2007; in "Proceedings of the 4th High-End Visualization Workshop", (2007), ISBN: 978-3-86541-216-4, 5 - 13. BibTeX |
| 832. | H. Ceric, E. Langer, S. Selberherr: "Modeling of Residual Stresses in Thin Metal Films"; Poster: International Workshop on Stress-Induced Phenomena in Metallization, Kyoto, Japan; 04.04.2007 - 06.04.2007; in "9th International Workshop on Stress-Induced Phenomena in Metallization", (2007), 18. BibTeX |
| 831. | R. Heinzl, P. Schwaha, S. Selberherr: "Modern Concepts for High-Perfomance Scientific Computing - Library Centric Application Design"; Talk: International Conference on Software and Data Technologies (ICSOFT), Barcelona; 22.07.2007 - 25.07.2007; in "Proceedings of the 2nd ICSOFT 2007", (2007), ISBN: 978-989-8111-05-0, 100 - 107. BibTeX |
| 830. | V. Palankovski, M. Wagner, W. Heiss: "Monte Carlo Simulation of Electron Transport in PbTe"; Talk: International Conference on Narrow Gap Semiconductors, Guildford; 08.07.2007 - 12.07.2007; in "The 13thInternational Conference on Narrow Gap Semiconductors", (2007), 50. BibTeX |
| 829. | S. Vitanov, V. Palankovski: "Monte Carlo Study of Transport Properties of InN"; Poster: International Conference on Narrow Gap Semiconductors, Guildford; 08.07.2007 - 12.07.2007; in "The 13th International Conference on Narrow Gap Semiconductors", (2007), 99. BibTeX |
| 828. | T. Grasser, B. Kaczer: "Negative Bias Temperature Instability: Recoverable versus Permanent Degradation"; Talk: European Solid-State Device Research Conference (ESSDERC), München; 11.09.2007 - 13.09.2007; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2007), ISBN: 1-4244-1124-6, 127 - 130. BibTeX |
| 827. | S. Vitanov, V. Palankovski: "Normally-Off AlGaN/GaN HEMTs with InGaN Cap Layer: A Theoretical Study"; Poster: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) doi:10.1109/ISDRS.2007.4422390. BibTeX |
| 826. | A. Nentchev, S. Selberherr: "On the Magnetic Field Extraction for On-Chip Inductance Calculation"; Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 349 - 352 doi:10.1007/978-3-211-72861-1_84. BibTeX |
| 825. | M. Vasicek, J. Cervenka, M. Karner, M. Wagner, T. Grasser: "Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs"; Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 08.10.2007 - 10.10.2007; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), 96 - 97. BibTeX |
| 824. | S. Vitanov, V. Palankovski, S. Murad, T. Rödle, R. Quay, S. Selberherr: "Predictive Simulation of AlGaN/GaN HEMTs"; Talk: IEEE Compound Semiconductor IC Symposium (CSICS), Portland; 14.10.2007 - 17.10.2007; in "IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest 2007", (2007), ISBN: 1-4244-1022-3, 131 - 134 doi:10.1109/CSICS07.2007.31. BibTeX |
| 823. | M. Nedjalkov, D. Vasileska: "Semi-Discrete 2D Wigner-Particle Approach"; Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 08.10.2007 - 10.10.2007; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), 122 - 123. BibTeX |
| 822. | P. Schwaha, M. Schwaha, R. Heinzl, E. Ungersböck, S. Selberherr: "Simulation Methodologies for Scientific Computing - Modern Application Design"; Talk: International Conference on Software and Data Technologies (ICSOFT), Barcelona; 22.07.2007 - 25.07.2007; in "Proceedings of the 2nd ICSOFT 2007", (2007), ISBN: 978-989-8111-07-4, 270 - 276. BibTeX |
| 821. | T. Grasser, B. Kaczer, Ph. Hehenberger, W. Gös, R. Connor, H. Reisinger, W. Gustin, C. Schlünder: "Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 10.12.2007 - 12.12.2007; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2007), ISBN: 1-4244-1508-x, 801 - 804 doi:10.1109/IEDM.2007.4419069. BibTeX |
| 820. | S. Selberherr: "Strain Engineering for Nanoscale CMOS Transistors"; Talk: IEEE EDS Distinguished Lecture, Pontifical Catholic University of Rio de Janeiro, Rio de Janeiro, Brasil; (invited) 06.02.2007. BibTeX |
| 819. | S. Selberherr: "Strain Engineering for Nanoscale CMOS Transistors"; Talk: IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil; (invited) 08.02.2007. BibTeX |
| 818. | R. Orio, H. Ceric, S. Selberherr: "Strain-Induced Anisotropy of Electromigration in Copper Interconnect"; Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) . BibTeX |
| 817. | W. Benger, G. Ritter, R. Heinzl: "The Concepts of VISH"; Talk: High-End Visualization Workshop, Obergurgl; 18.06.2007 - 22.06.2007; in "Proceedings of the 4th High-End Visualization Workshop", (2007), ISBN: 978-3-86541-216-4, 28 - 41. BibTeX |
| 816. | M. Pourfath, H. Kosina, S. Selberherr: "The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance"; Talk: International Symposium on Advanced Nanodevices and Nanotechnology (ISANN), Waikoloa, Hawaii; 02.12.2007 - 07.12.2007; in "International Symposium on Advanced Nanodevices and Nanotechnology", (2007), 37 - 38. BibTeX |
| 815. | M. Pourfath, H. Kosina: "The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNT-FETs"; Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 309 - 312 doi:10.1007/978-3-211-72861-1_74. BibTeX |
| 814. | M. Pourfath, H. Kosina, S. Selberherr: "The Role of Inelastic Electron-Phonon Interaction on the On-Current and Gate Delay Time of CNT-FETs"; Talk: European Solid-State Device Research Conference (ESSDERC), München; 11.09.2007 - 13.09.2007; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2007), ISBN: 1-4244-1123-8, 239 - 242. BibTeX |
| 813. | T. Grasser, W. Gös, V. Sverdlov, B. Kaczer: "The Universality of NBTI Relaxation and its Implications for Modeling and Characterization"; Talk: International Reliability Physics Symposium (IRPS), Phoenix; 15.04.2007 - 19.04.2007; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2007), ISBN: 1-4244-0919-5, 268 - 280. BibTeX |
| 812. | M. Nedjalkov, D. Vasileska, K. Raleva: "Thermal Relaxation of Non-Equilibrium Electrons in Nanowires"; Talk: Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics (ETAI), Ohrid, Macedonia; 19.09.2007 - 21.09.2007; in "8th Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics", (2007), . BibTeX |
| 811. | A. Nentchev, S. Selberherr: "Three-Dimensional On-Chip Inductance and Resistance Extraction"; Talk: Sociedade Brasileira da Microeltronica 2007 (SBCCI 2007), Rio de Janeiro; 03.09.2007 - 06.09.2007; in "20th Symposium on Integrated Circuits and Systems Design", (2007), ISBN: 978-1-59593-910-4, 6 page(s) doi:10.1145/1284480.1284540. BibTeX |
| 810. | J. Cervenka, H. Ceric, O. Ertl, S. Selberherr: "Three-Dimensional Sacrificial Etching"; Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 433 - 436 doi:10.1007/978-3-211-72861-1_105. BibTeX |
| 809. | J. Cervenka, H. Ceric, S. Selberherr: "Three-Dimensional Simulation of Sacrificial Etching"; Talk: SPIE Smart Sensors, Actuators, and MEMS, Masapalomas, Spain; 02.05.2007 - 04.05.2007; . BibTeX |
| 808. | H. Ceric, E. Langer, S. Selberherr: "Three-Phase Model for the Volmer-Weber Crystal Growth"; Talk: Nanostructures and Carrier Interactions (NNCI), Atsugi, Japan; 20.02.2007 - 23.02.2007; in "Nanostructures and Carrier Interactions", (2007), 127. BibTeX |
| 807. | V. Sverdlov, G. Karlowatz, H. Kosina, S. Selberherr: "Two-Band k.p Model for the Conduction Band in Silicon"; Talk: The European Simulation and Modelling Conference (ESM), Malta; 22.10.2007 - 24.10.2007; in "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6, 220 - 224. BibTeX |
| 806. | V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr: "Two-Band k·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility"; Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) . BibTeX |
| 805. | P. Schwaha, C. Giani, R. Heinzl, S. Selberherr: "Visualization of Polynomials Used in Series Expansions"; Talk: High-End Visualization Workshop, Obergurgl; 18.06.2007 - 22.06.2007; in "Proceedings of the 4th High-End Visualization Workshop", (2007), ISBN: 978-3-86541-216-4, 139 - 148. BibTeX |
| 804. | M. Nedjalkov, H. Kosina, D. Vasileska: "Wigner Ensemble Monte Carlo: Challanges of 2D Nano-Device Simulation"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 05.06.2007 - 09.06.2007; in "Proceedings of the International Conference on Large-Scale Scientific Computing (LSSC)", (2007), B-41 - B-42. BibTeX |
| 803. | M. Pourfath, H. Kosina, S. Selberherr: "A Comprehensive Study of Carbon Nanotube Based Transistors: The Effects of Geometrical, Interface Barrier, and Scattering Parameters"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 11.12.2006 - 13.12.2006; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2006), ISBN: 1-4244-0438-x, 819 - 822 doi:10.1109/IEDM.2006.346739. BibTeX |
| 802. | M. Spevak, R. Heinzl, P. Schwaha, T. Grasser: "A Computational Framework for Topological Operations"; Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 18.06.2006 - 21.06.2006; in "Proceedings of the PARA Conference", (2006), 57. BibTeX |
| 801. | M. Movahhedi, A. Nentchev, H. Ceric, A. Abdipour, S. Selberherr: "A Finite Element Time-Domain Algorithm Based on the Alternating-Direction Implicit Method"; Talk: European Microwave Week (EUMW), Manchester; 10.09.2006 - 15.09.2006; in "European Microwave Week 2006 Book of Abstracts", (2006), ISBN: 2-9600551-6-0, 1 - 4. BibTeX |
| 800. | K. Riedling, S. Selberherr: "A Flexible Web-Based Publication Database"; Talk: F. Malpica, A. Tremante, F. Welsch (ed); International Conference on Education and Information Systems: Technologies and Applications (EISTA), Orlando, Florida, USA; 20.07.2006 - 23.07.2006; in "Proceedings Volume 1 of the 4th International Conference on Education and Information Systems: Technologies and Applications (EISTA 2006)", (2006), ISBN: 980-6560-79-5, 262 - 267. BibTeX |
| 799. | P. Schwaha, R. Heinzl, M. Spevak, T. Grasser: "A Generic Approach to Scientific Computing"; Talk: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 10.07.2006 - 14.07.2006; in "ICCAM 2006 Abstracts of Talks", (2006), 137. BibTeX |
| 798. | M. Spevak, R. Heinzl, P. Schwaha, T. Grasser, S. Selberherr: "A Generic Discretization Library"; Talk: Annual ACM Conference on Object-Oriented Programming, Systems, Languages and Applications (OOPSLA), Portland; 22.10.2006 - 26.10.2006; in "OOPSLA Proceedings", (2006), ISSN: 1652-926x, 95 - 100. BibTeX |
| 797. | R. Heinzl, M. Spevak, P. Schwaha, T. Grasser: "A Generic Scientific Simulation Environment for Multidimensional Simulation in the Area of TCAD"; Poster: The Nanotechnology Conference and Trade Show, Boston; 07.05.2006 - 11.05.2006; in "NSTI Nanotech Proceedings", (2006), ISBN: 0-9767985-8-1, 526 - 529. BibTeX |
| 796. | R. Heinzl, M. Spevak, P. Schwaha, S. Selberherr: "A Generic Topology Library"; Talk: Annual ACM Conference on Object-Oriented Programming, Systems, Languages and Applications (OOPSLA), Portland; 22.10.2006 - 26.10.2006; in "OOPSLA Proceedings", (2006), ISSN: 1652-926x, 85 - 93. BibTeX |
| 795. | R. Heinzl, M. Spevak, P. Schwaha, T. Grasser: "A High Performance Generic Scientific Simulation Environment"; Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 18.06.2006 - 21.06.2006; in "Proceedings of the PARA Conference", (2006), 61. BibTeX |
| 794. | S. Vitanov, M. Nedjalkov, V. Palankovski: "A Monte Carlo Model of Piezoelectric Scattering in GaN"; Talk: International Conference on Numerical Methods and Applications (NM&A), Borovets; 20.08.2006 - 24.08.2006; in "Sixth International Conference on Numerical Methods and Applications Abstracts", (2006), B-75. BibTeX |
| 793. | S. Holzer, M. Wagner, L. Friembichler, E. Langer, T. Grasser, S. Selberherr: "A Multi-Purpose Optimization Framework for TCAD Applications"; Talk: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 10.07.2006 - 14.07.2006; in "ICCAM 2006 Abstracts of Talks", (2006), 76. BibTeX |
| 792. | V. Suvorov, A. Hössinger, Z. Djuric: "A Novel Approach to Three-Dimensional Semiconductor Process Simulation: Application to Thermal Oxidation"; Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 3 - 4. BibTeX |
| 791. | R. Heinzl, M. Spevak, P. Schwaha: "A Novel High Performance Approach for Technology Computer Aided Design"; Talk: Student Electrical Engineering, Information and Communication Technologies (STUDENT EEICT), Brünn; 27.04.2006 in "Proceedings of the 12th Conference Student EEICT 2006", (2006), Vol.4, ISBN: 80-214-3163-6, 446 - 450. BibTeX |
| 790. | M. Karner, M. Wagner, T. Grasser, H. Kosina: "A Physically Based Quantum Correction Model for DG MOSFETs"; Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 17.04.2006 - 21.04.2006; in "San Francisco 2006 MRS Meeting Abstracts", (2006), 104 - 105. BibTeX |
| 789. | R. Wittmann, S. Uppal, A. Hössinger, J. Cervenka, S. Selberherr: "A Study of Boron Implantation into High Ge Content SiGe Alloys"; Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 29.10.2006 - 03.11.2006; in "210th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) . BibTeX |
| 788. | S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr: "A Tensorial High-Field Electron Mobility Model for Strained Silicon"; Poster: International SiGe Technology and Device Meeting (ISTDM), Princeton; 15.05.2006 - 17.05.2006; in "2006 International SiGe Technology and Device Meeting Conference Digest", (2006), ISBN: 1-4244-0461-4, 72 - 73. BibTeX |
| 787. | K. Riedling, S. Selberherr: "A Web-Based Publication Database for Performance Evaluation and Research Documentation"; Talk: International Conference for Engineering Education (ICEE), San Juan, Puerto Rico; 23.07.2006 - 28.07.2006; in "Proceedings of the ICEE 2006", (2006), ISBN: 1-58874-648-8, R2F-5 - R2F-10. BibTeX |
| 786. | S. Selberherr: "About Models and Simulation of Nano-Scale Devices"; Talk: IEEE EDS Distinguished Lecture, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Mexico City, Mexico; (invited) 25.08.2006. BibTeX |
| 785. | V. Palankovski: "Advanced Device Modeling for High Frequency Applications"; Talk: Compact Modeling for RF/Microwave Applications (CMRF), Maastricht; (invited) 11.10.2006. BibTeX |
| 784. | P. Schwaha, R. Heinzl, M. Spevak, T. Grasser: "Advanced Equation Processing for TCAD"; Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 18.06.2006 - 21.06.2006; in "Proceedings of the PARA Conference", (2006), 64. BibTeX |
| 783. | S. Holzer, M. Wagner, A. Sheikholeslami, M. Karner, G. Span, T. Grasser, S. Selberherr: "An Extendable Multi-Purpose Simulation and Optimization Framework for Thermal Problems in TCAD Applications"; Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Nice; 27.09.2006 - 29.09.2006; in "Collection of Papers Presented at the 12th International Workshop on Thermal Investigation of ICs and Systems", (2006), ISBN: 2-9161-8704-9, 239 - 244. BibTeX |
| 782. | G. Karlowatz, E. Ungersböck, W. Wessner, H. Kosina, S. Selberherr: "Analysis of Hole Transport in Arbitrarily Strained Germanium"; Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 29.10.2006 - 03.11.2006; in "210th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) . BibTeX |
| 781. | S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr: "Analytical Modeling of Electron Mobility in Strained Germanium"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 39 - 42 doi:10.1109/SISPAD.2006.282833. BibTeX |
| 780. | A. Sheikholeslami, R. Heinzl, S. Holzer, C. Heitzinger, M. Spevak, M. Leicht, O. Häberlen, J. Fugger, F. Badrieh, F. Parhami, H. Puchner, T. Grasser, S. Selberherr: "Applications of Two- and Three-Dimensional General Topography Simulator in Semiconductor Manufacturing Processes"; Talk: Iranian Conference on Electrical Engineering (ICEE), Tehran; 16.05.2006 - 18.05.2006; in "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 4 page(s) . BibTeX |
| 779. | M. Spevak, R. Heinzl, P. Schwaha, T. Grasser: "Automatic Linearization using Functional Programming for Scientific Computing"; Talk: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 10.07.2006 - 14.07.2006; in "ICCAM 2006 Abstracts of Talks", (2006), 147. BibTeX |
| 778. | V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr: "Comparative Study of Low-Field Mobilities in Double- and Single-Gate Ultra-Thin Body SOI for Different Substrate Orientations"; Talk: Silicon Nanoelectronics Workshop, Honolulu; 11.06.2006 - 12.06.2006; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 17 - 18. BibTeX |
| 777. | S. Holzer, A. Sheikholeslami, M. Karner, T. Grasser: "Comparison of Deposition Models for TEOS CVD Process"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 26.06.2006 - 28.06.2006; in "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts", (2006), 158 - 159. BibTeX |
| 776. | R. Heinzl, P. Schwaha, M. Spevak, T. Grasser: "Concepts for High Performance Generic Scientific Computing"; Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3, 4-1 - 4-9. BibTeX |
| 775. | M. Karner, A. Gehring, S. Holzer, M. Wagner, H. Kosina: "Continuum Versus Quasi-Bound State Tunneling in Novel Device Architectures"; Poster: Silicon Nanoelectronics Workshop, Honolulu; 11.06.2006 - 12.06.2006; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 161 - 162. BibTeX |
| 774. | V. Sverdlov, H. Kosina, S. Selberherr: "Current Flow in Upcoming Microelectronic Devices"; Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; (invited) 26.04.2006 - 28.04.2006; in "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0041-4, 3 - 8. BibTeX |
| 773. | V. Sverdlov, H. Kosina, S. Selberherr: "Current Transport in Nanoelectronic Semiconductor Devices"; Talk: IEEE Conference on Emerging Technologies - Nanoelectronics (NanoSingapore), Singapore; (invited) 10.01.2006 - 13.01.2006; in "Proceedings IEEE Conference on Emerging Technologies - Nanoelectronics", (2006), ISBN: 0-7803-9358-9, 490 - 495. BibTeX |
| 772. | M. Wagner, G. Span, S. Holzer, T. Grasser: "Design Optimization of Large Area Si/SiGe Thermoelectric Generators"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 397 - 400 doi:10.1109/SISPAD.2006.282918. BibTeX |
| 771. | M. Pourfath, H. Kosina, S. Selberherr: "Dissipative Transport in CNTFETs"; Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 345 - 346. BibTeX |
| 770. | L. Li, G. Meller, H. Kosina: "Doping Dependent Conductivity in Organic Semiconductors"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 204 - 207 doi:10.1109/SISPAD.2006.282872. BibTeX |
| 769. | G. Karlowatz, W. Wessner, H. Kosina: "Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation"; Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3, 4-1 - 4-6. BibTeX |
| 768. | E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr: "Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 43 - 46 doi:10.1109/SISPAD.2006.282834. BibTeX |
| 767. | G. Meller, L. Li, S. Holzer, H. Kosina: "Electron Kinetics in Disordered Organic Semiconductors"; Poster: ACS/IEEE/MRS Annual Organic Microelectronics Workshop, Toronto; 09.07.2006 - 12.07.2006; in "Abstracts 2nd Annual Organic Microelectronics Workshop", (2006), 42. BibTeX |
| 766. | S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr: "Electron Mobility Model for <110> Stressed Si Including Strain-Dependent Mass"; Poster: Silicon Nanoelectronics Workshop, Honolulu; 11.06.2006 - 12.06.2006; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 153 - 154. BibTeX |
| 765. | L. Li, G. Meller, H. Kosina: "Field-Dependent Effective Transport Energy in Organic Semiconductor"; Poster: Meeting on Molecular Electronics (ELECMOL), Grenoble; 11.12.2006 - 15.12.2006; in "3rd Meeting on Molecular Electronics", (2006), T2-PC18. BibTeX |
| 764. | V. Palankovski, S. Vitanov, R. Quay: "Field-Plate Optimization of AlGaN/GaN HEMTs"; Talk: IEEE Compound Semiconductor IC Symposium (CSICS), San Antonio; 12.11.2006 - 15.11.2006; in "IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest", (2006), ISBN: 1-4244-0126-7, 107 - 110 doi:10.1109/CSICS.2006.319926. BibTeX |
| 763. | G. Karlowatz, E. Ungersböck, W. Wessner, H. Kosina: "Full-Band Monte Carlo Analysis of Electron Transport in Arbitrary Strained Silicon"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 63 - 66 doi:10.1109/SISPAD.2006.282839. BibTeX |
| 762. | A. Nentchev, J. Cervenka, G. Marnaus, H. Enichlmair, S. Selberherr: "Heatring - Smart Investigation of Temperature Impact on Integrated Circuit Devices"; Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Nice; 27.09.2006 - 29.09.2006; in "Collection of Papers Presented at the 12th International Workshop on Thermal Investigation of ICs and Systems", (2006), ISBN: 2-9161-8704-9, 235 - 238. BibTeX |
| 761. | R. Heinzl, M. Spevak, P. Schwaha, T. Grasser: "High Performance Process and Device Simulation with a Generic Environment"; Talk: Iranian Conference on Electrical Engineering (ICEE), Tehran; 16.05.2006 - 18.05.2006; in "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 4 page(s) . BibTeX |
| 760. | V. Palankovski, A. Marchlewski, E. Ungersböck, S. Selberherr: "Identification of Transport Parameters for Gallium Nitride Based Semiconductor Devices"; Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3, 14-1 - 14-9. BibTeX |
| 759. | R. Wittmann, H. Puchner, H. Ceric, S. Selberherr: "Impact of Random Bit Values on NBTI Lifetime of an SRAM Cell"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 03.07.2006 - 07.07.2006; in "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9, 41 - 44. BibTeX |
| 758. | R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer: "Influence of Interface and Oxide Traps on Negative Bias Temperature Instability"; Poster: Silicon Nanoelectronics Workshop, Honolulu; 11.06.2006 - 12.06.2006; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 163 - 164. BibTeX |
| 757. | G. Ferrari, C. Jacoboni, M. Nedjalkov, A. Asenov: "Introducing Energy Broadening in Semiclassical Monte Carlo Simulations"; Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 17 - 18. BibTeX |
| 756. | R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer: "Investigation of NBTI Recovery During Measurement"; Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 17.04.2006 - 21.04.2006; in "San Francisco 2006 MRS Meeting Abstracts", (2006), 110 - 111. BibTeX |
| 755. | P. Schwaha, R. Heinzl, W. Brezna, J. Smoliner, H. Enichlmair, R. Minixhofer, T. Grasser: "Leakage Current Analysis of a Real World Silicon-Silicon Dioxide Capacitance"; Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; 26.04.2006 - 28.04.2006; in "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0042-2, 365 - 370. BibTeX |
| 754. | E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr: "Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations"; Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 29.10.2006 - 03.11.2006; in "210th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) . BibTeX |
| 753. | V. Sverdlov, E. Ungersböck, H. Kosina: "Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions"; NATO Advanced Research Workshop Nanoscaled Semiconductor-On-Insulator Structures and Devices, Sudak; 15.10.2006 - 19.10.2006; in "NATO Advanced Research Workshop Conference Abstracts", (2006), 77 - 78. BibTeX |
| 752. | V. Sverdlov, E. Ungersböck, H. Kosina: "Mobility for High Effective Field in Double-Gate and Single-Gate SOI for Different Substrate Orientations"; Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Grenoble; 08.03.2006 - 10.03.2006; in "EUROSOI 2006 Second Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits", (2006), 133 - 134. BibTeX |
| 751. | E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr: "Modeling of Advanced Semiconductor Devices"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Ouro Preto; (invited) 28.08.2006 - 01.09.2006; in "ECS Transactions", (2006), ISBN: 1-56677-512-4, 207 - 216. BibTeX |
| 750. | T. Grasser, W. Gös, B. Kaczer: "Modeling of Dispersive Transport in the Context of Negative Bias Temperature Instability"; Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 16.10.2006 - 19.10.2006; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2006), ISBN: 1-4244-0297-2, 5 - 10. BibTeX |
| 749. | H. Kosina: "Modeling of Electronic Transport Phenomena in Semiconductor Nanodevices"; Talk: The 4th International Nanotech Symposium & Exhibition, Seoul; (invited) 30.08.2006 - 01.09.2006; in "Program Book NANO KOREA 2006", (2006), . BibTeX |
| 748. | Ch. Hollauer, H. Ceric, S. Selberherr: "Modeling of Intrinsic Stress Effects in Deposited Thin Films"; Talk: EUROSENSORS XX, Göteborg; 17.09.2006 - 20.09.2006; in "Eurosensors 20th Anniversary Vol. 1", (2006), ISBN: 91-631-9280-2, 324 - 325. BibTeX |
| 747. | T. Grasser, S. Selberherr: "Modeling of Negative Bias Temperature Instability"; Talk: Symposium Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI ERA, Warszawa; (invited) 25.06.2006 - 28.06.2006; in "Abstracts 7th Symposium Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI ERA", (2006), 1 - 2. BibTeX |
| 746. | T.V. Gurov, E. Atanassov, M. Nedjalkov, V. Palankovski: "Monte Carlo Method for Modeling of Electron Transport in Quantum Wires"; Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3, 13-1 - 13-8. BibTeX |
| 745. | R. Wittmann, A. Hössinger, J. Cervenka, S. Uppal, S. Selberherr: "Monte Carlo Simulation of Boron Implantation into (100) Germanium"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 381 - 384 doi:10.1109/SISPAD.2006.282914. BibTeX |
| 744. | S. Dhar, E. Ungersböck, M. Nedjalkov, V. Palankovski: "Monte Carlo Simulation of the Electron Mobility in Strained Silicon"; Talk: International Scientific and Applied Science Conference (ET), Sozopol; 20.09.2006 - 22.09.2006; in "The Fifteenth International Scientific and Applied Science Conference Electronics ET'2006 Proceedings of the Conference Book 2", (2006), ISBN: 954-438-565-7, 169 - 173. BibTeX |
| 743. | H. Ceric, J. Cervenka, E. Langer, S. Selberherr: "Moving Boundary Applications in Process and Interconnect TCAD"; Talk: Mini-Workshop on Anisotropic Motion Laws, Oberwolfach; 13.08.2006 - 19.08.2006; in "Proceedings Mini-Workshop on Anisotropic Motion Laws", (2006), Report No.38/2006, 13 - 16. BibTeX |
| 742. | R. Heinzl, M. Spevak, P. Schwaha, T. Grasser: "Multidimensional and Multitopological TCAD with a Generic Scientific Simulation Environment"; Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; 26.04.2006 - 28.04.2006; in "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0042-2, 173 - 176. BibTeX |
| 741. | H. Kosina: "Nanoelectronic Device Simulation Based on the Wigner Function Formalism"; Talk: International Workshop on Tera- and Nano-Devices: Physics and Modeling, Aizu-Wakamatsu; (invited) 16.10.2006 - 19.10.2006; in "IWTND06 Workbook", (2006), 26. BibTeX |
| 740. | R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer: "Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 26.06.2006 - 28.06.2006; in "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts", (2006), 96 - 97. BibTeX |
| 739. | P. Vitanov, N. LeQuang, A. Harizanova, O. Nichiporuk, T. Ivanova, S. Vitanov, V. Palankovski: "New Surface Passivation and Local Contacts on the Backside for thin mc-Si Solar Cells"; Talk: World Renewable Energy Congress (WREC), Firenze; 19.08.2006 - 25.08.2006; in "World Renewable Energy Congress IX Book of Abstracts", (2006), ISBN: 978-0-08-045056-8, 564. BibTeX |
| 738. | M. Karner, S. Holzer, M. Vasicek, W. Gös, M. Wagner, H. Kosina, S. Selberherr: "Numerical Analysis of Gate Stacks"; Talk: Meeting of the Electrochemical Society, High Dielectric Constant Gate Stacks, Cancun; 29.10.2006 - 03.11.2006; in "210th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) . BibTeX |
| 737. | H. Kosina: "Numerical Simulation of Quantum Devices Utilizing the Wigner Function Formalism"; Talk: Recent Advances in Modeling and Simulation of Semiconductor Devices and Circuits (SEMIC), Wien; 16.02.2006 - 17.02.2006; . BibTeX |
| 736. | M. Pourfath, H. Kosina: "On the Effect of Electron-Phonon Interaction Parameters on the Performance of Carbon Nanotube Based Transistors"; Poster: Trends in Nanotechnology Conference (TNT), Grenoble; 04.09.2006 - 08.09.2006; in "Proceedings Trends in Nanotechnology", (2006), 2 page(s) . BibTeX |
| 735. | M. Pourfath, H. Kosina, S. Selberherr: "On the Effect of Scattering on the Performance of Carbon Nanotube Field-Effect Transistors"; Talk: Iranian Conference on Electrical Engineering (ICEE), Tehran; 16.05.2006 - 18.05.2006; in "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 5 page(s) . BibTeX |
| 734. | M. Pourfath, H. Kosina, S. Selberherr: "Optimal Design for Carbon Nanotube Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Montreux; 19.09.2006 - 21.09.2006; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2006), ISBN: 1-4244-0301-4, 210 - 213. BibTeX |
| 733. | S. Holzer, S. Selberherr: "Optimization Issue in Interconnect Analysis"; Talk: International Conference on Microelectronics (MIEL), Beograd; (invited) 14.05.2006 - 17.05.2006; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2006), ISBN: 1-4244-0116-x, 465 - 470 doi:10.1109/ICMEL.2006.1650994. BibTeX |
| 732. | M. Pourfath, H. Kosina, S. Selberherr: "Optimizing the Performance of Carbon Nanotube Transistors"; Poster: IEEE Conference on Nanotechnology (NANO), Cincinnati; 17.06.2006 - 20.06.2006; in "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2006), ISBN: 1-4244-0078-3, 520 - 523 doi:10.1109/NANO.2006.247702. BibTeX |
| 731. | V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr: "Orientation Dependence of the Low Field Mobility in Double- and Single-Gate SOI FETs"; Talk: European Solid-State Device Research Conference (ESSDERC), Montreux; 18.09.2006 - 22.09.2006; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2006), ISBN: 1-4244-0301-4, 178 - 181. BibTeX |
| 730. | L. Li, G. Meller, H. Kosina: "Percolation Current in Organic Semiconductors"; Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 161 - 162. BibTeX |
| 729. | R. Heinzl, M. Spevak, P. Schwaha, T. Grasser, S. Selberherr: "Performance Analysis for High-Precision Interconnect Simulation"; Talk: European Simulation and Modeling Conference (ESMC), Toulouse; 23.10.2006 - 25.10.2006; in "The 2006 European Simulation and Modelling Conference", (2006), ISBN: 9077381-30-9, 113 - 116. BibTeX |
| 728. | R. Heinzl, P. Schwaha, M. Spevak, T. Grasser: "Performance Aspects of a DSEL for Scientific Computing with C++"; Talk: Workshop on Parallel Object-Oriented Scientific Computing (POOSC), Nantes; 03.07.2006 - 07.07.2006; in "Proceedings of the POOSC Conference", (2006), 37 - 41. BibTeX |
| 727. | E. Ungersböck, S. Dhar, G. Karlowatz, H. Kosina, S. Selberherr: "Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon"; Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 141 - 142. BibTeX |
| 726. | A. Sheikholeslami, S. Selberherr, F. Parhami, H. Puchner: "Planarization of Passivation Layers during Manufacturing Processes of Image Sensors"; Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Singapore; 11.09.2006 - 14.09.2006; in "Proceedings of the 6th International Conference on Numerical Simulation of Optoelectronic Devices", (2006), ISBN: 0-7803-9755-x, 35 - 36. BibTeX |
| 725. | A. Sheikholeslami, F. Parhami, H. Puchner, S. Selberherr: "Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers"; Talk: International Conference on Nanoscience and Technology (ICNT), Basel; 30.07.2006 - 04.08.2006; in "International Conference on Nanoscience and Technology (ICNT 2006)", (2006), ISBN: 3-905084-71-6, 163 - 164. BibTeX |
| 724. | M. Wagner, G. Span, S. Holzer, O. Triebl, T. Grasser: "Power Output Improvement of SiGe Thermoelectric Generators"; Talk: Meeting of the Electrochemical Society (ECS), Cancun; 29.10.2006 - 03.11.2006; in "Meeting Abstracts 2006 Joint International Meeting", (2006), ISSN: 1091-8213, 1 page(s) . BibTeX |
| 723. | M. Spevak, R. Heinzl, P. Schwaha, T. Grasser: "Process and Device Simulation With a Generic Scientific Simulation Environment"; Talk: International Conference on Microelectronics (MIEL), Beograd; 14.04.2006 - 17.04.2006; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2006), ISBN: 1-4244-0116-x, 475 - 478 doi:10.1109/ICMEL.2006.1650996. BibTeX |
| 722. | M. Wagner, T. Grasser, M. Karner, H. Kosina: "Quantum Correction for DG MOSFETs"; Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 87 - 88. BibTeX |
| 721. | V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr: "Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices"; Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 29 - 30. BibTeX |
| 720. | G. Meller, L. Li, S. Holzer, H. Kosina: "Simulation of Carrier Injection and Propagation in Molecularly Disordered Systems"; Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Singapore; 11.09.2006 - 14.09.2006; in "Proceedings of the 6th International Conference on Numerical Simulation of Optoelectronic Devices", (2006), ISBN: 0-7803-9755-x, 1 - 2. BibTeX |
| 719. | M. Spevak, R. Heinzl, P. Schwaha, T. Grasser: "Simulation of Microelectronic Structures Using A Posteriori Error Estimation and Mesh Optimization"; Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3, 5-1 - 5-8. BibTeX |
| 718. | H. Ceric, Ch. Hollauer, S. Selberherr: "Simulation of Texture Development Caused Stress Build-Up in Electroplated Copper Lines"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 03.07.2006 - 07.07.2006; in "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2006), ISBN: 1-4244-0206-9, 359 - 363. BibTeX |
| 717. | M. Karner, E. Ungersböck, A. Gehring, S. Holzer, H. Kosina, S. Selberherr: "Strain Effects on Quasi-Bound State Tunneling in Advanced SOI CMOS Technologies"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 314 - 317 doi:10.1109/SISPAD.2006.282898. BibTeX |
| 716. | E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr: "Strain Engineering for CMOS Devices"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Shanghai; (invited) 23.10.2006 - 26.10.2006; in "2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (Part 1 of 3)", (2006), ISBN: 1-4244-0160-7, 124 - 127. BibTeX |
| 715. | T. Grasser, R. Entner, O. Triebl, H. Enichlmair: "TCAD Modeling of Negative Bias Temperature Instability"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 330 - 333 doi:10.1109/SISPAD.2006.282902. BibTeX |
| 714. | M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park, S. Selberherr: "The Effect of Electron-Phonon Interaction on the Static and Dynamic Response of CNTFETs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 208 - 211 doi:10.1109/SISPAD.2006.282873. BibTeX |
| 713. | E. Ungersböck, H. Kosina, S. Selberherr: "The Influence of Stress on Inversion Layer Mobility"; Talk: Advanced Heterostructure Workshop (AHW), Kona; (invited) 03.12.2006 - 08.12.2006; in "Abstracts Advanced Heterostructure Workshop", (2006), TH-2. BibTeX |
| 712. | T. Krishnamohan, C. Jungemann, D. Kim, E. Ungersböck, S. Selberherr, P. Wong, Y. Nishi, K. Saraswat: "Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 11.12.2006 - 13.12.2006; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2006), ISBN: 1-4244-0438-x, 937 - 940 doi:10.1109/IEDM.2006.346938. BibTeX |
| 711. | G. Span, M. Wagner, S. Holzer, T. Grasser: "Thermoelectric Power Conversion using Generation of Electron-Hole Pairs in Large Area p-n Junctions"; Talk: International Conference on Thermoelectrics, Vienna; 06.08.2006 - 10.08.2006; in "International Conference on Thermoelectrics", (2006), 6, ISBN: 1-4244-0811-3, 23 - 28. BibTeX |
| 710. | M. Wagner, G. Span, T. Grasser: "Thermoelectric Power Generation Using Large Area Si/SiGe pn-Junctions With Varying Ge-Content"; Talk: International SiGe Technology and Device Meeting (ISTDM), Princeton; 15.05.2006 - 17.05.2006; in "2006 International SiGe Technology and Device Meeting Conference Digest", (2006), ISBN: 1-4244-0461-4, 216 - 217. BibTeX |
| 709. | H. Ceric, Ch. Hollauer, S. Selberherr: "Three-Dimensional Simulation of Intrinsic Stress Build-Up in Thin Films"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 192 - 195 doi:10.1109/SISPAD.2006.282869. BibTeX |
| 708. | S. Holzer, Ch. Hollauer, H. Ceric, M. Karner, T. Grasser, E. Langer, S. Selberherr: "Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 03.07.2006 - 07.07.2006; in "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9, 154 - 157. BibTeX |
| 707. | S. Selberherr: "Tools, Methodologies and Scientific Issues for the Modeling of Advanced Semiconductor Devices"; Talk: Workshop on Semiconductors and Micro- & Nano-Technology (SEMINATEC), Campinas; (invited) 09.02.2006 - 10.02.2006; in "Abstracts of Workshop on Semiconductors and Micro- & Nano-Technology", (2006), 12 - 15. BibTeX |
| 706. | M. Pourfath, H. Kosina, S. Selberherr: "Tunneling-CNTFETs"; Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 291 - 292. BibTeX |
| 705. | P. Vitanov, S. Vitanov, V. Palankovski: "Two-Dimensional Analysis of the Back-Side Contacts of Thin Silicon Solar Cells"; Poster: 21st European Photovoltaic Solar Energy Conference, Dresden; 04.09.2006 - 08.09.2006; in "21st European Photovoltaic Solar Energy Conference", (2006), ISBN: 3-936338-20-5, 1475 - 1478. BibTeX |
| 704. | S. Vitanov, V. Palankovski, R. Quay, E. Langer: "Two-Dimensional Numerical Simulation of AlGaN/GaN HEMTs"; Talk: Target Days (TARGET), Frascati; 16.10.2006 - 18.10.2006; in "TARGET Days 2006 Book of Proceedings", (2006), ISBN: 3-902477-07-5, 81 - 84. BibTeX |
| 703. | V. Palankovski, M. Hristov, P. Philippov: "Two-Dimensional Physical AC-Simulation of GaAs HBTs"; Talk: International Scientific and Applied Science Conference (ET), Sozopol; 20.09.2006 - 22.09.2006; in "The Fifteenth International Scientific and Applied Science Conference Electronics ET'2006 Proceedings of the Conference Book 2", (2006), ISBN: 954-438-565-7, 164 - 168. BibTeX |
| 702. | M. Nedjalkov, D. Vasileska, E. Atanassov, V. Palankovski: "Ultrafast Wigner Transport in Quantum Wires"; Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 285 - 286. BibTeX |
| 701. | M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, H. Kosina, T. Grasser, S. Selberherr: "VSP - A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications"; Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 255 - 256. BibTeX |
| 700. | M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr: "VSP-A Gate Stack Analyzer"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 26.06.2006 - 28.06.2006; in "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Program and Abstracts", (2006), 101 - 102. BibTeX |
| 699. | O. Triebl, T. Grasser: "Vector Discretization Schemes Based on Unstructured Neighbourhood Information"; Talk: International Semiconductor Conference CAS, Sinaia; 27.09.2006 - 29.09.2006; in "CAS 2006 Proceedings Vol. 2", (2006), ISBN: 1-4244-0109-7, 337 - 340. BibTeX |
| 698. | H. Kosina, V. Sverdlov, T. Grasser: "Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 357 - 360 doi:10.1109/SISPAD.2006.282908. BibTeX |
| 697. | M. Pourfath, H. Kosina, S. Selberherr: "A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors"; Talk: Modelling and Simulation of Electron Devices (MSED), Pisa; 04.07.2005 - 05.07.2005; in "15th Workshop on Modelling and Simulation of Electron Devices", (2005), 95 - 96. BibTeX |
| 696. | R. Heinzl, M. Spevak, P. Schwaha, T. Grasser: "A Novel Technique for Coupling Three Dimensional Mesh Adaption With An A Posteriori Error Estimator"; Talk: PhD Research in Microelectronics and Electronics (PRIME), Lausanne; 25.07.2005 - 28.07.2005; in "2005 PhD Research in Microelectronics and Electronics", (2005), Vol. 1, ISBN: 0-7803-9345-7, 175 - 178. BibTeX |
| 695. | S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr: "A Physically-Based Electron Mobility Model for Strained Si Devices"; Talk: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 13 - 16. BibTeX |
| 694. | R. Heinzl, P. Schwaha, M. Spevak, T. Grasser: "Adaptive Mesh Generation for TCAD with Guaranteed Error Bounds"; Talk: European Simulation and Modeling Conference (ESMC), Porto; 26.10.2005 - 28.10.2005; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8, 425 - 429. BibTeX |
| 693. | L. Li, H. Kosina: "An Analytical Model for Organic Thin Film Transistors"; Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; 19.12.2005 - 21.12.2005; in "Proceedingd of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits", (2005), ISBN: 0-7803-9339-2, 571 - 574. BibTeX |
| 692. | A. Sheikholeslami, F. Parhami, R. Heinzl, E. Al-Ani, C. Heitzinger, F. Badrieh, H. Puchner, T. Grasser, S. Selberherr: "Applications of Three-Dimensional Topography Simulation in the Design of Interconnect Lines"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 187 - 190 doi:10.1109/SISPAD.2005.201504. BibTeX |
| 691. | H. Ceric, V. Deshpande, Ch. Hollauer, S. Holzer, T. Grasser, S. Selberherr: "Comprehensive Analysis of Vacancy Dynamics Due to Electromigration"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 27.06.2005 - 01.07.2005; in "Proceedings of the 12th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2005), ISBN: 0-7803-9301-5, 100 - 103. BibTeX |
| 690. | P. Schwaha, R. Heinzl, M. Spevak, T. Grasser: "Coupling Three-Dimensional Mesh Adaptation with an A Posteriori Error Estimator"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 235 - 238 doi:10.1109/SISPAD.2005.201516. BibTeX |
| 689. | A. Gehring, S. Selberherr: "Current Transport Models for Nano-Scale Semiconductor Devices"; Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; (invited) 10.07.2005 - 13.07.2005; in "Proc. 9th World Multi-Conf.on Systemics, Cybernetics and Informatics", (2005), Vol. 6, ISBN: 980-6560-58-2, 366 - 371. BibTeX |
| 688. | S. Selberherr: "Current Transport in Upcoming Microelectronic Devices"; Talk: IEEE EDS Distinguished Lecture, Universidade Federal de Santa Catarina, Florianopolis, Brasil; (invited) 22.03.2005. BibTeX |
| 687. | G. Angelov, V. Palankovski, M. Hristov, P. Philippov: "Demonstration of a Slipstream Simulation Flow Including Device and Circuit Simulators"; Poster: ISSE 2005 - 28th International Spring Seminar on Electronics Technology, Wiener Neustadt; 19.05.2005 - 22.05.2005; in "28th International Spring Seminar on Electronics Technology", (2005), ISBN: 0-7803-9324-4, 486 - 491 doi:10.1109/ISSE.2005.1491077. BibTeX |
| 686. | G. Angelov, V. Palankovski, M. Hristov: "Demonstration of a Slipstream Simulation Flow Including Device and Circuit Simulators"; Poster: ISSE 2005 - 28th International Spring Seminar on Electronics Technology, Wiener Neustadt; 19.05.2005 - 22.05.2005; in "ISSE 2005, 28th International Spring Seminar on Electronics Technology, Conference Program and Abstracts", (2005), 39, ISBN: 3-85133036-6, 110 - 111. BibTeX |
| 685. | M. Spevak, T. Grasser: "Discretisation Schemes For Macroscopic Transport Equations on Non-Cartesian Coordinate Systems"; Talk: European Simulation and Modeling Conference (ESMC), Porto; 24.10.2005 - 26.10.2005; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8, 474 - 478. BibTeX |
| 684. | W. Wessner, H. Ceric, J. Cervenka, S. Selberherr: "Dynamic Mesh Adaptation for Three-Dimensional Electromigration Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 147 - 150 doi:10.1109/SISPAD.2005.201494. BibTeX |
| 683. | M. Karner, A. Gehring, H. Kosina: "Efficient Calculation of Life Time Based Direct Tunneling through Stacked Dielectrics"; Talk: Modelling and Simulation of Electron Devices (MSED), Pisa; 04.07.2005 - 05.07.2005; in "15th Workshop on Modelling and Simulation of Electron Devices", (2005), 97 - 98. BibTeX |
| 682. | M. Karner, A. Gehring, H. Kosina, S. Selberherr: "Efficient Calculation of Quasi-Bound State Tunneling in CMOS Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 35 - 38 doi:10.1109/SISPAD.2005.201466. BibTeX |
| 681. | M. Karner, A. Gehring, S. Holzer, H. Kosina, S. Selberherr: "Efficient Calculation of Quasi-Bound State Tunneling through Stacked Dielectrics"; Talk: Meeting of the Electrochemical Society (ECS), Los Angeles; 16.10.2005 - 21.10.2005; in "208th ECS Meeting", (2005), 1119, ISSN: 1091-8213, 1 page(s) . BibTeX |
| 680. | W. Wessner, H. Ceric, Ch. Hollauer, E. Langer, S. Selberherr: "Electromigration Reliability TCAD Solutions"; Talk: SEMICON Europa2005, München; (invited) 12.04.2005 - 14.04.2005; . BibTeX |
| 679. | C. Jungemann, T. Grasser, B. Neinhüs, B. Meinerzhagen: "Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium"; Talk: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 25 - 28. BibTeX |
| 678. | M. Pourfath, W.J. Park, H. Kosina, S. Selberherr: "Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2005 - 10.06.2005; in "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), 50 - 51. BibTeX |
| 677. | T.V. Gurov, E. Atanasov, I. Dimov, V. Palankovski, S. Smirnov: "Femtosecond Evolution of Spacially Inhomogeneous Carrier Excitations: Part II: Stochastic Approach and GRID Implementation"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 06.06.2005 - 10.06.2005; in "Book of Abstracts", (2005), 26 - 27. BibTeX |
| 676. | M. Nedjalkov, T.V. Gurov, H. Kosina, D. Vasileska, V. Palankovski: "Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations: Part I: Kinetic Approach"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 06.06.2005 - 10.06.2005; in "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), 46. BibTeX |
| 675. | P. Schwaha, R. Heinzl, W. Brezna, J. Smoliner, H. Enichlmair, R. Minixhofer, T. Grasser: "Fully Three-Dimensional Analysis of Leakage Current in Non-Planar Oxides"; Talk: European Simulation and Modeling Conference (ESMC), Porto; 24.10.2005 - 26.10.2005; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8, 469 - 473. BibTeX |
| 674. | R. Heinzl, T. Grasser: "Generalized Comprehensive Approach for Robust Three-Dimensional Mesh Generation for TCAD"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 211 - 214 doi:10.1109/SISPAD.2005.201510. BibTeX |
| 673. | M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park: "Geometry-dependence of the DC and AC Response of Ohmic Contact Carbon Nanotube Field Effect Transistor"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 91 - 94 doi:10.1109/SISPAD.2005.201480. BibTeX |
| 672. | M. Pourfath, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr: "High Performance Carbon Nanotube Field Effect Transistor with the Potential for Tera Level Integration"; Talk: International Conference on Ultimate Integration of Silicon (ULIS), Bologna; 07.04.2005 - 08.04.2005; in "ULIS 2005 6th International Conference on Ultimate Integration of Silicon Proceedings of the Conference", (2005), ISBN: 8890084707, 95 - 98. BibTeX |
| 671. | T. Grasser: "Higher-Order Moment Models for Engineering Applications"; Talk: Recent Advances in Modeling and Simulation of Semiconductor Devices and Circuits (SEMIC), Milano; (invited) 17.02.2005 - 18.02.2005; . BibTeX |
| 670. | R. Entner, A. Gehring, H. Kosina, T. Grasser, S. Selberherr: "Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices"; Talk: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 45 - 48. BibTeX |
| 669. | R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring, S. Selberherr: "Impact of NBTI-driven Parameter Degradation on Lifetime of a 90nm p-MOSFET"; Poster: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 17.10.2005 - 20.10.2005; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2005), ISBN: 0-7803-8992-1, 99 - 102. BibTeX |
| 668. | M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park, S. Selberherr: "Improving DC and AC Characteristics of Ohmic Contact Carbon Nanotube Field Effect Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble; 12.09.2005 - 16.09.2005; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2005), Cdrom Isbn: 0-7803-9204-3, ISBN: 0-7803-9203-5, 541 - 544. BibTeX |
| 667. | A. Sheikholeslami, S. Holzer, C. Heitzinger, M. Leicht, O. Häberlen, J. Fugger, T. Grasser, S. Selberherr: "Inverse Modeling of Oxid Deposition Using Measurements of a TEOS CVD Process"; Talk: PhD Research in Microelectronics and Electronics (PRIME), Lausanne; 25.07.2005 - 28.07.2005; in "2005 PhD Research in Microelectronics and Electronics", (2005), Vol. 2, ISBN: 0-7803-9345-7, 279 - 282. BibTeX |
| 666. | Ch. Hollauer, S. Holzer, H. Ceric, S. Wagner, T. Grasser, S. Selberherr: "Investigation of Thermo-Mechanical Stress in Modern Interconnect Layouts"; Talk: International Congress on Thermal Stresses (TS), Wien; 26.05.2005 - 29.05.2005; in "Proceedings of The Sixth International Congress on Thermal Stresses", (2005), Vol. 2, ISBN: 3-901167-12-9, 637 - 640. BibTeX |
| 665. | G. Meller, L. Li, H. Kosina: "Kinetic Monte Carlo Simulation of Molecularly Doped Organic Semiconductors"; Poster: Meeting on Molecular Electronics (ELECMOL), Grenoble; 19.12.2005 - 21.12.2005; in "Second Meeting on Molecular Electronics", (2005), 107. BibTeX |
| 664. | A. Sheikholeslami, E. Al-Ani, R. Heinzl, C. Heitzinger, F. Parhami, F. Badrieh, H. Puchner, T. Grasser, S. Selberherr: "Level Set Method Based General Topography Simulator and its Application in Interconnect Processes"; Poster: International Conference on Ultimate Integration of Silicon (ULIS), Bologna; 07.04.2005 - 08.04.2005; in "ULIS 2005 6th International Conference on Ultimate Integration of Silicon", (2005), ISBN: 8890084707, 139 - 142. BibTeX |
| 663. | S. Holzer, S. Selberherr: "Material Parameter Identification for Interconnect Analysis"; Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; (invited) 13.12.2005 - 17.12.2005; in "Proceedings of the XIII International Workshop on Physics of Semiconductor Devices", (2005), Vol. 2, ISBN: 81-7764-946-9, 635 - 641. BibTeX |
| 662. | H. Ceric, Ch. Hollauer, S. Selberherr: "Microstructure and Stress Aspects of Electromigration Modeling"; Poster: International Workshop on Stress-Induced Phenomena in Metallization, Dresden; 12.09.2005 - 14.09.2005; in "8th International Workshop on Stress-Induced Phenomena in Metallization", (2005), P 17. BibTeX |
| 661. | T. Grasser: "Mixed Mode Device/Circuit Simulation"; Talk: MOS-AK ESSDERC Companion Workshop, Grenoble; (invited) 16.09.2005. BibTeX |
| 660. | V. Sverdlov, H. Kosina, S. Selberherr: "Modeling Current Transport in Ultra-Scaled Field Effect Transistors"; Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; (invited) 19.12.2005 - 21.12.2005; in "Proceedings of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits", (2005), ISBN: 0-7803-9339-2, 385 - 390. BibTeX |
| 659. | R. Entner, A. Gehring, H. Kosina, T. Grasser, S. Selberherr: "Modeling of Tunneling Currents for Highly Degraded CMOS Devices"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 219 - 222 doi:10.1109/SISPAD.2005.201512. BibTeX |
| 658. | S. Dhar, G. Karlowatz, E. Ungersböck, H. Kosina, S. Selberherr: "Modeling of Velocity-Field Characteristics in Strained Silicon"; Poster: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; 13.12.2005 - 17.12.2005; in "Proceedings of the XIII International Workshop on Physics of Semiconductor Devices", (2005), Vol. 2, ISBN: 81-7764-947-7, 1060 - 1063. BibTeX |
| 657. | R. Wittmann, A. Hössinger, S. Selberherr: "Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 191 - 194 doi:10.1109/SISPAD.2005.201505. BibTeX |
| 656. | G. Meller, L. Li, H. Kosina: "Monte Carlo Simulation of Molecularly Doped Organic Semiconductors"; Talk: European Conference on Organic Electronics and Related Phenomena (ECOER), Winterthur; 27.09.2005 - 30.09.2005; in "3rd European Conference on Organic Electronics and Related Phenomena Book of Abstracts", (2005), 44 - 45. BibTeX |
| 655. | E. Ungersböck, H. Kosina: "Monte Carlo Study of Electron Transport in Strained Silicon Inversion Layers"; Talk: Modelling and Simulation of Electron Devices (MSED), Pisa; 04.07.2005 - 05.07.2005; in "15th Workshop on Modelling and Simulation of Electron Devices", (2005), 10 - 11. BibTeX |
| 654. | S. Dhar, G. Karlowatz, E. Ungersböck, H. Kosina: "Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained Silicon"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 223 - 226 doi:10.1109/SISPAD.2005.201513. BibTeX |
| 653. | M. Karner, A. Gehring, S. Holzer, H. Kosina: "On the Efficient Calculation of Quasi-Bound States for the Simulation of Direct Tunneling"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2005 - 10.06.2005; in "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2005), 33 - 34. BibTeX |
| 652. | A. Nentchev, R. Sabelka, W. Wessner, S. Selberherr: "On-Chip Interconnect Simulation of Parasitic Capacitances in Periodic Structures"; Talk: European Simulation and Modeling Conference (ESMC), Porto; 24.10.2005 - 26.10.2005; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), 420 - 424. BibTeX |
| 651. | M. Wagner, M. Karner, T. Grasser: "Quantum Correction Models for Modern Semiconductor Devices"; Poster: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; 13.12.2005 - 17.12.2005; in "Proceedings of the XIII International Workshop on Semiconductor Devices", (2005), Vol. 1, 458 - 461. BibTeX |
| 650. | H. Kosina, V. Sverdlov, Ch. Ringhofer, M. Nedjalkov, S. Selberherr: "Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2005 - 10.06.2005; in "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), 36 - 37. BibTeX |
| 649. | A. Gehring, V. Sverdlov, H. Kosina, S. Selberherr: "Quantum Transport in Ultra-Scaled Double-gate MOSFETs: A Wigner Function-based Monte Carlo Approach"; Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada; 19.01.2005 - 21.01.2005; in "EUROSOI 2005 First Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits", (2005), 71 - 72. BibTeX |
| 648. | Y. Kinkhabwala, V. Sverdlov, K. Likharev: "Quasi-continuous Charge Transfer via 2D Hopping"; Talk: APS March Meeting, Los Angeles; 21.03.2005 - 25.03.2005; . BibTeX |
| 647. | M. Pourfath, H. Kosina, S. Selberherr: "Rigorous Modeling of Carbon Nanotube Field Effect Transistors"; Poster: International Conference on New Phenomena in Mesoscopic Structures, Maui; 27.11.2005 - 02.12.2005; in "Abstracts Collection Seventh International Conference on New Phenomena in Mesoscopic Systems Fifth International Conference on Surface and Interfaces in Mesoscopic Devices", (2005), 155 - 156. BibTeX |
| 646. | V. Sverdlov: "Shot noise suppression and enhancement in 2D Shot Noise Suppression and Enhancement at 2D Hopping and Single-Electron Arrays"; Talk: International Conference on Unsolved Problems of Noise (UPON), Gallipoli; (invited) 06.06.2005 - 10.06.2005; in "4-th International Conference on Unsolved Problems of Noise and Fluctuations in Physics, Biology & High Technology", (2005), 177 - 182. BibTeX |
| 645. | A. Nentchev, R. Sabelka, S. Selberherr: "Simplification of Spacial Structures by Simulation with Periodic Boundary Conditions"; Talk: VLSI Multilevel Interconnection Conference (VMIC), Fremont; 03.10.2005 - 06.10.2005; in "2005 Proceedings Twenty Second International VLSI Multilevel Interconnection Conference", (2005), 547 - 552. BibTeX |
| 644. | R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring, S. Selberherr: "Simulation of Dynamic NBTI Degradation for a 90 nm CMOS Technology"; Talk: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 29 - 32. BibTeX |
| 643. | L. Li, G. Meller, H. Kosina: "Temperature and Field-dependence of Hopping Conduction in Organic Semiconductors"; Poster: European Conference on Organic Electronics and Related Phenomena (ECOER), Winterthur; 27.09.2005 - 30.09.2005; in "3rd European Conference on Organic Electronics and Related Phenomena Book of Abstracts", (2005), 112 - 113. BibTeX |
| 642. | E. Ungersböck, H. Kosina: "The Effect of Degeneracy on Electron Transport in Strained Silicon Inversion Layers"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 311 - 314 doi:10.1109/SISPAD.2005.201535. BibTeX |
| 641. | M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park, S. Selberherr: "The Effect of Device Geometry on the Static and Dynamic Response of Carbon Nanotube Field Effect Transistors"; Talk: IEEE Conference on Nanotechnology (NANO), Nagoya; 11.07.2005 - 15.07.2005; in "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2005), Cdrom Isbn: 0-7803-9200-0, 4 page(s) doi:10.1109/NANO.2005.1500641. BibTeX |
| 640. | G. Span, M. Wagner, T. Grasser: "Thermoelectric Power Generation Using Large Area pn-Junctions"; Talk: European Conference on Thermoelectrics (ECT), Nancy; 01.09.2005 - 02.09.2005; in "The 3rd European Conference on Thermoelectrics Proceedings ECT2005", (2005), 72 - 75. BibTeX |
| 639. | Ch. Hollauer, H. Ceric, S. Selberherr: "Three-Dimensional Simulation of Stress Dependent Thermal Oxidation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 183 - 186 doi:10.1109/SISPAD.2005.201503. BibTeX |
| 638. | Ch. Hollauer, H. Ceric, S. Selberherr: "Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress"; Talk: Meeting of the Electrochemical Society, Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Los Angeles; 16.10.2005 - 21.10.2005; in "208th ECS Meeting", (2005), ISSN: 1091-8213, 1 page(s) . BibTeX |
| 637. | E. Al-Ani, R. Heinzl, P. Schwaha, T. Grasser, S. Selberherr: "Three-Dimensional State-Of-The-Art Topography Simulation"; Talk: European Simulation and Modeling Conference (ESMC), Porto; 24.10.2005 - 26.10.2005; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8, 430 - 432. BibTeX |
| 636. | S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, R. Entner, E. Langer, T. Grasser, S. Selberherr: "Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis"; Poster: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN: 0-9767985-4-9), ISBN: 0-9767985-2-2, 620 - 623. BibTeX |
| 635. | S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser, S. Selberherr: "Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress"; Talk: SPIE VLSI Circuits and Systems, Sevilla, Spain; 09.05.2005 - 11.05.2005; . BibTeX |
| 634. | V. Sverdlov, A. Gehring, H. Kosina, S. Selberherr: "Tunneling and Intersubband Coupling in Ultra-Thin Body Double-Gate MOSFETs"; Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble; 12.09.2005 - 16.09.2005; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2005), Cdrom Isbn: 0-7803-9204-3, ISBN: 0-7803-9203-5, 93 - 96. BibTeX |
| 633. | M. Pourfath, A. Gehring, B.-H. Cheong, W.J. Park, H. Kosina, S. Selberherr: "Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration"; Talk: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN: 0-9767985-4-9), ISBN: 0-9767985-2-2, 128 - 131. BibTeX |
| 632. | C. Heitzinger, A. Sheikholeslami, J. Fugger, O. Häberlen, M. Leicht, S. Selberherr: "A Case Study in Predictive Three-Dimensional Topography Simulation Based on a Level-Set Algorithm"; Talk: Meeting of the Electrochemical Society, Electrochemical Processing in ULSI and MEMS, San Antonio; 09.05.2004 - 13.05.2004; in "205th ECS Meeting", (2004), 132 - 142. BibTeX |
| 631. | R. Entner, A. Gehring, T. Grasser, S. Selberherr: "A Comparison of Quantum Correction Models for the Three-Dimensional Simulation of FinFET Structures"; Poster: International Spring Seminar on Electronics Technology (ISSE), Sofia; 13.05.2004 - 16.05.2004; in "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", (2004), 1, ISBN: 0-7803-8422-9, 114 - 117. BibTeX |
| 630. | T. Grasser, R. Kosik, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr: "A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Devices"; Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 24.10.2004 - 27.10.2004; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 36 - 37 doi:10.1109/IWCE.2004.1407308. BibTeX |
| 629. | T. Ayalew, T. Grasser, H. Kosina, S. Selberherr: "Accurate Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices"; Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 31.08.2004 - 04.09.2004; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 92 - 93. BibTeX |
| 628. | T. Ayalew, T. Grasser, H. Kosina, S. Selberherr: "Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 295 - 298 doi:10.1007/978-3-7091-0624-2_69. BibTeX |
| 627. | C. Heitzinger, Ch. Ringhofer, S. Ahmed, D. Vasileska: "Accurate Three-Dimensional Simulation of Electron Mobility Including Electron-Electron and Electron-Dopant Interactions"; Talk: Meeting of the Electrochemical Society (ECS), Honolulu; 03.10.2004 - 08.10.2004; in "Proc. 206th Meeting of the Electrochemical Society", (2004), . BibTeX |
| 626. | H. Kosina: "Advanced Transport Models for Nanodevices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; (invited) 02.09.2004 - 04.09.2004; in "From Sub-μm-CMOS to Nanotechnology SISPAD 2004 Companion Workshop", (2004), 35. BibTeX |
| 625. | T. Grasser, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr: "Advanced Transport Models for Sub-Micrometer Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; (invited) 02.09.2004 - 04.09.2004; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 1 - 8 doi:10.1007/978-3-7091-0624-2_1. BibTeX |
| 624. | V. Palankovski, S. Selberherr: "Analysis of High Speed Heterostructure Devices"; Talk: International Conference on Microelectronics (MIEL), Nis; (invited) 16.05.2004 - 19.05.2004; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2004), ISBN: 0-7803-8166-1, 115 - 122 doi:10.1109/ICMEL.2004.1314567. BibTeX |
| 623. | S. Selberherr: "Analysis of High Speed Heterostructure Devices"; Talk: IEEE EDS Mini-Colloquium Distinguished Lecture, University of Nis, Nis, Serbia; (invited) 16.05.2004. BibTeX |
| 622. | W. Wessner, Ch. Hollauer, A. Hössinger, S. Selberherr: "Anisotropic Laplace Refinement for Three-Dimensional Oxidation Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 165 - 168 doi:10.1007/978-3-7091-0624-2_39. BibTeX |
| 621. | S. Wagner, T. Grasser, S. Selberherr: "Benchmarking Linear Solvers with Semiconductor Simulation Examples"; Talk: International Conference on Scientific and Engineering Computation (ICSEC), Singapore; 30.06.2004 - 02.07.2004; in "Proc. Intl. Conf. on Scientific & Engineering Computation (ICSEC)", (2004), 4 page(s) . BibTeX |
| 620. | V. Sverdlov, H. Kosina, Ch. Ringhofer, M Nedjalkov, S. Selberherr: "Beyond the Golden Rule in Electron-Phonon Scattering: an Advanced Monte Carlo Algorithm"; Talk: DFG Workshop on Multiscale Problems in Quantum Mechanics and Averaging Techniques, Garching; 04.11.2004 - 05.11.2004; . BibTeX |
| 619. | R. Wittmann, A. Hössinger, S. Selberherr: "Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe"; Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Honolulu; 03.10.2004 - 08.10.2004; in "206th ECS Meeting", (2004), ISBN: 1-56677-420-9, 181 - 192. BibTeX |
| 618. | S. Wagner, T. Grasser, C. Fischer, S. Selberherr: "Concepts and Implementation of an Advanced Equation Assembly Module"; Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; 18.07.2004 - 21.07.2004; in "The 8th World Multi-Conference on Systemics, Cybernetics and Informatics", (2004), ISBN: 980-6560-13-2, 150 - 155. BibTeX |
| 617. | H. Kosina, S. Selberherr: "Device Simulation Demands of Upcoming Microelectronic Devices"; Talk: Advanced Workshop on Frontiers in Electronics (WOFE), Aruba; (invited) 17.12.2004 - 22.12.2004; in "Extended Abstracts of WOFE 2004", (2004), 6. BibTeX |
| 616. | C. Heitzinger, Ch. Ringhofer, S. Ahmed, D. Vasileska: "Efficient Simulation of the Full Coulomb Interaction in Three Dimensions"; Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 24.10.2004 - 27.10.2004; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 24 - 25 doi:10.1109/IWCE.2004.1407300. BibTeX |
| 615. | T. Ayalew, A. Gehring, T. Grasser, S. Selberherr: "Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Zürich; 04.10.2004 - 08.10.2004; . BibTeX |
| 614. | S. Wagner, T. Grasser, S. Selberherr: "Evaluation of Linear Solver Modules for Semiconductor Device Simulation"; Talk: International Conference on Mathematical Problems in Engineering and Aerospace Sciences (ICNPAA), Timisoara; (invited) 02.06.2004 - 04.06.2004; . BibTeX |
| 613. | A. Gehring, S. Selberherr: "Evolution of Current Transport Models for Engineering Applications"; Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; (invited) 24.10.2004 - 27.10.2004; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 20 - 21 doi:10.1109/IWCE.2004.1407298. BibTeX |
| 612. | A. Hössinger, R. Minixhofer, S. Selberherr: "Full Three-Dimensional Analysis of a Non-Volatile Memory Cell"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 129 - 132 doi:10.1007/978-3-7091-0624-2_31. BibTeX |
| 611. | A. Gehring, S. Selberherr: "Gate Current Modeling for MOSFETs"; Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Punta Cana; (invited) 03.11.2004 - 05.11.2004; in "Proceedings of the ICCDCS 2004", (2004), ISBN: 0-7803-8777-5, 1 - 8. BibTeX |
| 610. | S. Selberherr: "Gate Currents in Small MOSFETs"; Talk: IEEE EDS Distinguished Lecture, University of Sao Paulo, Sao Paulo, Brasil; (invited) 06.04.2004. BibTeX |
| 609. | A. Gehring, S. Selberherr: "Gate Leakage Models for Device Simulation"; Talk: R. Huang, M. Yu, J. Liou, T. Hiramoto, C. Claeys (ed); International Conference on Solid State and Integrated Circuit Technology (ICSICT), Beijing; (invited) 18.10.2004 - 21.10.2004; in "7th International Conference on Solid-State and Integrated Circuits Technology Proceedings", (2004), Volume II, ISBN: 0-7803-8511-x, 971 - 976. BibTeX |
| 608. | V. Palankovski, S. Dhar, H. Kosina, S. Selberherr: "Improved Carrier Transport in Strained Si/Ge Devices"; Talk: Asia Pacific Microwave Conference (APMC), New Delhi; (invited) 15.12.2004 - 18.12.2004; in "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9, 4 page(s) . BibTeX |
| 607. | M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr: "Improving the Ambipolar Behavior of Schottky Barrier Carbon Nanotube Field Effect Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Leuven; 21.09.2004 - 23.09.2004; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2004), ISBN: 0780384784, 429 - 432. BibTeX |
| 606. | W. Wessner, S. Wagner, T. Grasser, S. Selberherr: "Meshing Aspects on Three-Dimensional Fin-Fet Device Simulations"; Talk: Asia Pacific Microwave Conference (APMC), New Delhi; 15.12.2004 - 18.12.2004; in "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9, 4 page(s) . BibTeX |
| 605. | S. Wagner, T. Grasser, S. Selberherr: "Mixed-Mode Device and Circuit Simulation"; Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Szczecin; (invited) 24.06.2004 - 26.06.2004; in "Proceedings of the 11th International Conference on Mixed Design of Integrated Circuits and Systems MIXDES", (2004), ISBN: 83-919289-7-7, 36 - 41. BibTeX |
| 604. | H. Kosina, V. Palankovski: "Mobility Enhancement in Strained CMOS Devices"; Talk: Symposium on Nano Device Technology (SNDT), Hsinchu; (invited) 12.05.2004 - 13.05.2004; in "Proceedings of the Symposium on Nano Device Technology", (2004), 101 - 105. BibTeX |
| 603. | S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr: "Modeling of Electron Mobility in Strained Si Devices"; Talk: Semiconductor Advances for Future Electronics (SAFE), Veldhoven, Netherlands; 25.11.2004 - 26.11.2004; in "Proceedings of SAFE 2004", (2004), ISBN: 90-73461-43-x, 793 - 796 doi:10.13140/2.1.1839.7126. BibTeX |
| 602. | A. Gehring, S. Selberherr: "Modeling of Wearout, Leakage, and Breakdown of Gate Dielectrics"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu; 05.07.2004 - 08.07.2004; in "11th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2004), ISBN: 0-7803-8454-7, 61 - 64. BibTeX |
| 601. | R. Wittmann, A. Hössinger, S. Selberherr: "Monte Carlo Simulation of Ion Implantation in Silicon-Germanium Alloys"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 169 - 172 doi:10.1007/978-3-7091-0624-2_40. BibTeX |
| 600. | M. Pourfath, E. Ungersböck, A. Gehring, W. Park, B.-H. Cheong, H. Kosina, S. Selberherr: "Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors"; Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 24.10.2004 - 27.10.2004; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 237 - 238 doi:10.1109/IWCE.2004.1407414. BibTeX |
| 599. | S.-C. Kim, W. Bahng, N.-K. Kim, T. Ayalew, T. Grasser, S. Selberherr: "Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication"; Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 31.08.2004 - 04.09.2004; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 492 - 493. BibTeX |
| 598. | T. Ayalew, S. Wagner, T. Grasser, S. Selberherr: "Numerical Simulation of Microwave MESFETs in 4H-SiC Fabricated Using Epitaxial Layers on Semi-Insulating Substrates"; Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 31.08.2004 - 04.09.2004; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 76 - 77. BibTeX |
| 597. | V. Palankovski, S. Selberherr: "Numerical Simulation of Selected Semiconductor Devices"; Talk: International Spring Seminar on Electronics Technology (ISSE), Sofia; 13.05.2004 - 16.05.2004; in "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", (2004), 1, ISBN: 0-7803-8422-9, 122 - 125 doi:10.1109/ISSE.2004.1490390. BibTeX |
| 596. | A. Gehring, S. Selberherr: "On the Calculation of Quasi-Bound States and Their Impact on Direct Tunneling in CMOS Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 25 - 28 doi:10.1007/978-3-7091-0624-2_6. BibTeX |
| 595. | C. Heitzinger, Ch. Ringhofer, S. Ahmed, D. Vasileska: "On the Efficient Simulation of Electron-Electron Interactions in Nanoscale MOSFETs"; Poster: Trends in Nanotechnology Conference (TNT), Segovia; 13.09.2004 - 17.09.2004; in "Proceedings Trends in Nanotechnology 2004", (2004), . BibTeX |
| 594. | R. Kosik, T. Grasser, R. Entner, K. Dragosits: "On the Highest Order Moment Closure Problem"; Poster: International Spring Seminar on Electronics Technology (ISSE), Sofia; 13.05.2004 - 16.05.2004; in "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", (2004), 1, ISBN: 0-7803-8422-9, 118 - 120. BibTeX |
| 593. | T. Grasser, H. Kosina, S. Selberherr: "On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 109 - 112 doi:10.1007/978-3-7091-0624-2_26. BibTeX |
| 592. | S. Holzer, A. Sheikholeslami, S. Wagner, C. Heitzinger, T. Grasser, S. Selberherr: "Optimization and Inverse Modeling for TCAD Applications"; Talk: Symposium on Nano Device Technology (SNDT), Hsinchu; 12.05.2004 - 13.05.2004; in "Proceedings of the Symposium on Nano Device Technology", (2004), 113 - 116. BibTeX |
| 591. | E. Ungersböck, M. Pourfath, A. Gehring, H. Kosina, B.-H. Cheong, S. Selberherr: "Optimization of Carbon Nanotube Field Effect Transistors"; Poster: Symposium on Nano Device Technology (SNDT), Hsinchu; 12.05.2004 - 13.05.2004; in "Proceedings of the Symposium on Nano Device Technology", (2004), 117 - 120. BibTeX |
| 590. | M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr: "Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors"; Talk: Nano and Giga Challenges in Microelectronics (NGCM), Krakau; 13.09.2004 - 17.09.2004; in "Nano and Giga Challenges in Microelectronics Book of Abstracts", (2004), 201. BibTeX |
| 589. | S. Wagner, T. Grasser, S. Selberherr: "Performance Evaluation of Linear Solvers Employed for Semiconductor Device Simulation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 351 - 354 doi:10.1007/978-3-7091-0624-2_83. BibTeX |
| 588. | S. Wagner, T. Grasser, S. Selberherr: "Physical Modeling of Semiconductor Devices for Microwave Applications"; Talk: Asia Pacific Microwave Conference (APMC), New Delhi; (invited) 15.12.2004 - 18.12.2004; in "Asia Pacific Microwave Conference 2004. Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9, 4 page(s) . BibTeX |
| 587. | T. Ayalew, S. Kim, T. Grasser, S. Selberherr: "SiC Power Rectifier With Improved Switching Performance "Numerical Analysis of Merged PiN Schottky Diode""; Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 31.08.2004 - 04.09.2004; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 476 - 477. BibTeX |
| 586. | A. Gehring, S. Selberherr: "Statistical Simulation of Gate Dielectric Wearout, Leakage, and Breakdown"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Zürich; 04.10.2004 - 08.10.2004; . BibTeX |
| 585. | H. Ceric, R. Sabelka, S. Holzer, W. Wessner, S. Wagner, T. Grasser, S. Selberherr: "The Evolution of the Resistance and Current Density During Electromigration"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 331 - 334 doi:10.1007/978-3-7091-0624-2_78. BibTeX |
| 584. | H. Kosina: "The Wigner Equation for Nanoscale Device Simulation"; Talk: DFG Workshop on Multiscale Problems in Quantum Mechanics and Averaging Techniques, Garching; (invited) 04.11.2004 - 05.11.2004; . BibTeX |
| 583. | M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, H. Kosina, S. Selberherr: "Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 149 - 152 doi:10.1007/978-3-7091-0624-2_35. BibTeX |
| 582. | A. Sheikholeslami, C. Heitzinger, E. Al-Ani, R. Heinzl, T. Grasser, S. Selberherr: "Three-Dimensional Surface Evolution Using a Level Set Method"; Poster: Iranian Ph.D. Students Seminar on Computer Science, Mathematics and Statistics (ICSMS), Paris; 01.12.2004 in "Proceedings of the Iranian Ph.D. Students Seminar on Computer Science, Mathematics and Statistics (ICSMS)", (2004), . BibTeX |
| 581. | A. Sheikholeslami, C. Heitzinger, F. Badrieh, H. Puchner, S. Selberherr: "Three-Dimensional Topography Simulation Based on a Level Set Method"; Talk: International Spring Seminar on Electronics Technology (ISSE), Sofia; 13.05.2004 - 16.05.2004; in "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", (2004), 2, ISBN: 0-7803-8422-9, 263 - 265. BibTeX |
| 580. | A. Sheikholeslami, C. Heitzinger, T. Grasser, S. Selberherr: "Three-Dimensional Topography Simulation for Deposition and Etching Processes Using a Level Set Method"; Talk: International Conference on Microelectronics (MIEL), Nis; 16.05.2004 - 19.05.2004; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2004), ISBN: 0-7803-8166-1, 241 - 244 doi:10.1109/ICMEL.2004.1314606. BibTeX |
| 579. | A. Gehring, H. Kosina: "Wigner-Function Based Simulation of Classic and Ballistic Transport in Scaled DG-MOSFETs Using the Monte Carlo Method"; Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 24.10.2004 - 27.10.2004; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 227 - 228 doi:10.1109/IWCE.2004.1407409. BibTeX |
| 578. | S. Wagner, V. Palankovski, T. Grasser, G. Röhrer, S. Selberherr: "A Direct Extraction Feature for Scattering Parameters of SiGe-HBTs"; Talk: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 15.01.2003 - 17.01.2003; in "First International SiGe Technology and Device Meeting", (2003), 83 - 84. BibTeX |
| 577. | S. Wagner, T. Grasser, C. Fischer, S. Selberherr: "A Generally Applicable Approach for Advanced Equation Assembling"; Talk: International Conference on Software Engineering and Applications (SEA), Marina del Rey; 03.11.2003 - 05.11.2003; in "Proceedings of the 7th IASTED International Conference on Software Engineering and Applications (SEA)", (2003), ISBN: 088-9863-94-6, 494 - 499. BibTeX |
| 576. | A. Sheikholeslami, C. Heitzinger, S. Selberherr: "A Method for Generating Structurally Aligned Grids Using a Level Set Approach"; Talk: European Simulation Multiconference (ESM), Nottingham; 09.06.2003 - 11.06.2003; in "Proc. 17th European Simulation Multiconference: Modelling and Simulation", (2003), ISBN: 3-936150-25-7, 496 - 501. BibTeX |
| 575. | C. Heitzinger, A. Sheikholeslami, J.M. Park, S. Selberherr: "A Method for Generating Structurally Aligned High Quality Grids and its Application to the Simulation of a Trench Gate MOSFET"; Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3, 457 - 460. BibTeX |
| 574. | H. Kosina, M. Nedjalkov, S. Selberherr: "A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations"; Talk: International Workshop on Computational Electronics (IWCE), Rome, Italy; 25.05.2003 - 28.05.2003; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2003), 35 - 36. BibTeX |
| 573. | A. Hössinger, J. Cervenka, S. Selberherr: "A Multistage Smoothing Algorithm for Coupling Cellular and Polygonal Datastructures"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 259 - 262 doi:10.1109/SISPAD.2003.1233686. BibTeX |
| 572. | M. Nedjalkov, H. Kosina, S. Selberherr: "A Quasi-Particle Model of the Electron - Wigner Potential Interaction"; Poster: International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS), Modena; 28.07.2003 - 01.08.2003; in "Proceedings HCIS-13", (2003), Th 5-1. BibTeX |
| 571. | S. Wagner, T. Grasser, C. Fischer, S. Selberherr: "A Simulator Module for Advanced Equation Assembling"; Talk: European Simulation Symposium (ESS), Delft; 26.10.2003 - 29.10.2003; in "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1, 55 - 64. BibTeX |
| 570. | H. Kosina, M. Nedjalkov, S. Selberherr: "A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 04.06.2003 - 08.06.2003; in "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), 24. BibTeX |
| 569. | M. Nedjalkov, H. Kosina, S. Selberherr: "A Weight Decomposition Approach to the Sign Problem in Wigner Transport Simulations"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 04.06.2003 - 08.06.2003; in "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), 35 - 36. BibTeX |
| 568. | S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr: "A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 04.06.2003 - 08.06.2003; in "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), 40 - 41. BibTeX |
| 567. | S. Wagner, T. Grasser, C. Fischer, S. Selberherr: "Advanced Equation Assembling Techniques for Numerical Simulators"; Talk: European Simulation and Modeling Conference (ESMC), Naples; 27.10.2003 - 29.10.2003; in "The 2003 European Simulation and Modelling Conference", (2003), ISBN: 90-77381-04-x, 390 - 394. BibTeX |
| 566. | C. Heitzinger, A. Hössinger, S. Selberherr: "An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results"; Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 05.02.2003 - 07.02.2003; in "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9, 702 - 711. BibTeX |
| 565. | A. Gehring, T. Grasser, H. Kosina, S. Selberherr: "An Energy Transport Gate Current Model Based on a Non-Maxwellian Energy Distribution"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Francisco; 23.02.2003 - 27.02.2003; in "Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show", (2003), ISBN: 0-9728422-1-7, 48 - 51. BibTeX |
| 564. | E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, B.-H. Cheong, W. B. Choi: "Analysis of Carrier Transport in Carbon Nanotube FET Devices"; Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 16.12.2003 - 20.12.2003; in "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6, 1059 - 1061. BibTeX |
| 563. | A. Gehring, H. Kosina, S. Selberherr: "Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method"; Talk: International Workshop on Computational Electronics (IWCE), Rome, Italy; 25.05.2003 - 28.05.2003; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2003), 105 - 106. BibTeX |
| 562. | W. Wessner, H. Ceric, C. Heitzinger, A. Hössinger, S. Selberherr: "Anisotropic Mesh Adaption Governed by a Hessian Matrix Metric"; Talk: European Simulation Symposium (ESS), Delft; 26.10.2003 - 29.10.2003; in "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1, 41 - 46. BibTeX |
| 561. | W. Wessner, A. Hössinger, S. Selberherr: "Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation"; Poster: Informationstagung Mikroelektronik (ME), Wien; 01.10.2003 - 02.10.2003; in "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7, 523 - 528. BibTeX |
| 560. | A. Sheikholeslami, C. Heitzinger, S. Selberherr, F. Badrieh, H. Puchner: "Capacitances in the Backend of a 100nm CMOS Process and their Predictive Simulation"; Poster: Informationstagung Mikroelektronik (ME), Wien; 01.10.2003 - 02.10.2003; in "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7, 481 - 486. BibTeX |
| 559. | V. Palankovski, S. Selberherr: "Challenges in Modeling of High-Speed Electron Devices"; Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; (invited) 16.12.2003 - 20.12.2003; in "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6, 45 - 50. BibTeX |
| 558. | T. Grasser: "Closure Relations for Macroscopic Transport Models"; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington; (invited) 10.12.2003 - 12.12.2003; in "2003 International Semiconductor Device Research Symposium", (2003), ISBN: 0-7803-8139-4, 504 - 505. BibTeX |
| 557. | H. Kosina, G. Klimeck, M. Nedjalkov, S. Selberherr: "Comparison of Numerical Quantum Device Models"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 171 - 174 doi:10.1109/SISPAD.2003.1233664. BibTeX |
| 556. | A. Gehring, H. Kosina, T. Grasser, S. Selberherr: "Consistent Comparison of Tunneling Models for Device Simulation"; Poster: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 20.03.2003 - 21.03.2003; in "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6, 131 - 134. BibTeX |
| 555. | V. Palankovski, S. Selberherr: "Critical Modeling Issues of SiGe Semiconductor Devices"; Talk: Symposium on Diagnostics and Yield, Warsaw; (invited) 22.06.2003 - 25.06.2003; in "Proceedings Symposium on Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI era", (2003), 1 - 11. BibTeX |
| 554. | J. Cervenka, A. Hössinger, R. Minixhofer, T. Grasser, S. Selberherr: "Dreidimensionale Modellierung Elektronischer Bauteile"; Poster: Informationstagung Mikroelektronik (ME), Wien; 01.10.2003 - 02.10.2003; in "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7, 377 - 382. BibTeX |
| 553. | W. Wessner, C. Heitzinger, A. Hössinger, S. Selberherr: "Error Estimated Driven Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 109 - 112 doi:10.1109/SISPAD.2003.1233649. BibTeX |
| 552. | A. Gehring, S. Harasek, E. Bertagnolli, S. Selberherr: "Evaluation of ZrO2 Gate Dielectrics for Advanced CMOS Devices"; Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3, 473 - 476. BibTeX |
| 551. | S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr: "Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Structures"; Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Aix-en-Provence; 24.09.2003 - 26.09.2003; in "International Workshop on Thermal Investigations of ICs and Systems", (2003), ISBN: 2-848-130202, 263 - 268. BibTeX |
| 550. | C. Heitzinger, A. Sheikholeslami, F. Badrieh, H. Puchner, S. Selberherr: "Feature Scale Simulation of Advanced Etching Processes"; Talk: Meeting of the Electrochemical Society, Physical Electrochemistry, Orlando; 12.10.2003 - 16.10.2003; in "204th ECS Meeting", (2003), ISBN: 1-56677-398-9, 1259. BibTeX |
| 549. | F. Badrieh, H. Puchner, C. Heitzinger, A. Sheikholeslami, S. Selberherr: "From Feature Scale Simulation to Backend Simulation for a 100nm CMOS Process"; Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3, 441 - 444. BibTeX |
| 548. | J.M. Park, T. Grasser, S. Selberherr: "High-Voltage Super-Junction SOI-LDMOSFETs with Reduced Drift Length"; Talk: Meeting of the Electrochemical Society (ECS), Paris; 26.04.2003 - 02.05.2003; in "203rd ECS Meeting", (2003), ISBN: 1-56677-347-4, 273 - 282. BibTeX |
| 547. | R. Wittmann, A. Hössinger, S. Selberherr: "Improvement of the Statistical Accuracy for the Three-Dimensional Monte Carlo Simulation of Ion Implantation"; Talk: European Simulation Symposium (ESS), Delft; 26.10.2003 - 29.10.2003; in "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1, 35 - 40. BibTeX |
| 546. | T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr: "Improving SiC Lateral DMOSFET Reliability under High Field Stress"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon; 07.10.2003 - 10.10.2003; . BibTeX |
| 545. | K. Dragosits, V. Palankovski, S. Selberherr: "Mobility Modeling in Presence of Quantum Effects"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 271 - 274 doi:10.1109/SISPAD.2003.1233689. BibTeX |
| 544. | S. Selberherr: "Modeling High Speed Semiconductor Devices of Modern Communication Systems"; Talk: IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil; (invited) 04.02.2003. BibTeX |
| 543. | V. Palankovski, S. Selberherr: "Modeling High Speed Semiconductor Devices of Modern Communication Systems"; Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; 27.07.2003 - 30.07.2003; in "Proc. 7th World Multiconference on Systemics, Cybernetics and Informatics", (2003), ISBN: 980-6560-01-9, 97 - 102. BibTeX |
| 542. | T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr: "Modeling and Simulation of SiC MOSFETs"; Talk: International Conference on Applied Modelling and Simulation, Marbella; 03.09.2003 - 05.09.2003; in "Proceedings of the Twelfth IASTED International Conference on Applied Simulation and Modelling", (2003), ISBN: 0-88986-384-9, 552 - 556. BibTeX |
| 541. | A. Gehring, F. Jimenez-Molinos, H. Kosina, A. Palma, F. Gamiz, S. Selberherr: "Modeling of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM Devices"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon; 07.10.2003 - 10.10.2003; . BibTeX |
| 540. | H. Ceric, A. Hössinger, T. Binder, S. Selberherr: "Modeling of Segregation on Material Interfaces by Means of the Finite Element Method"; Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 05.02.2003 - 07.02.2003; in "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9, 139 - 145. BibTeX |
| 539. | T.V. Gurov, M. Nedjalkov, H. Kosina: "Novel Monte Carlo Algorithms for Ultrafast Transport Phenomena in Semiconductors"; Talk: Seminar on Monte Carlo Methods (MCM), Berlin; 15.09.2003 - 19.09.2003; in "Book of Abstracts MCM-2003", (2003), 10. BibTeX |
| 538. | V. Palankovski, S. Wagner, S. Selberherr: "Numerical Analysis of Compound Semiconductor RF Devices"; Talk: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), San Diego; (invited) 09.11.2003 - 12.11.2003; in "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2003), ISBN: 0-7803-7833-4, 107 - 110 doi:10.1109/GAAS.2003.1252374. BibTeX |
| 537. | S. Wagner, V. Palankovski, R. Quay, T. Grasser, S. Selberherr: "Numerical Simulation of High-Speed High-Breakdown Indium Phosphide HBTs"; Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 16.12.2003 - 20.12.2003; in "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6, 836 - 838. BibTeX |
| 536. | S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr: "Numerische Berechnung von Silizium-Germanium Heterostruktur-Bipolartransistoren"; Poster: Informationstagung Mikroelektronik (ME), Wien; 01.10.2003 - 02.10.2003; in "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7, 383 - 388. BibTeX |
| 535. | M. Nedjalkov, E. Atanassov, H. Kosina, S. Selberherr: "Operator-Split Method for Variance Reduction in Stochastic Solutions of the Wigner Equation"; Talk: Seminar on Monte Carlo Methods (MCM), Berlin; 15.09.2003 - 19.09.2003; in "IVth IMACS Seminar on Monte Carlo Methods", (2003), 6. BibTeX |
| 534. | R. Minixhofer, S. Holzer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr: "Optimization of Electrothermal Material Parameters Using Inverse Modeling"; Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3, 363 - 366. BibTeX |
| 533. | V. Palankovski, S. Selberherr: "Optimization of SiGe HBTs for Industrial Applications"; Talk: International SiGe Technology and Device Meeting (ISTDM), Nagoya; (invited) 15.01.2003 - 17.01.2003; in "First International SiGe Technology and Device Meeting", (2003), 267 - 268. BibTeX |
| 532. | S. Selberherr: "Past and Future of Microelectronics Technology"; Talk: IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil; (invited) 04.02.2003. BibTeX |
| 531. | C. Heitzinger, A. Sheikholeslami, H. Puchner, S. Selberherr: "Predictive Simulation of Void Formation During the Deposition of Silicon Nitride and Silicon Dioxide Films"; Talk: Meeting of the Electrochemical Society (ECS), Paris; 26.04.2003 - 02.05.2003; in "203rd ECS Meeting", (2003), ISBN: 1-56677-347-4, 356 - 365. BibTeX |
| 530. | H. Kosina, M. Nedjalkov, S. Selberherr: "Quantum Monte Carlo Simulation of a Resonant Tunneling Diode Including Phonon Scattering"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Francisco; 23.02.2003 - 27.02.2003; in "Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show", (2003), ISBN: 0-9728422-1-7, 190 - 193. BibTeX |
| 529. | T. Grasser, H. Kosina, S. Selberherr: "Reformulation of Macroscopic Transport Models Based on the Moments of the Scattering Integral"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 63 - 66 doi:10.1109/SISPAD.2003.1233638. BibTeX |
| 528. | V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr: "Rigorous Modeling Approach to Numerical Simulation of SiGe-HBTs"; Poster: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 15.01.2003 - 17.01.2003; in "First International SiGe Technology and Device Meeting", (2003), 97 - 98. BibTeX |
| 527. | V. Palankovski, S. Selberherr: "Rigorous Modeling of High-Speed Semiconductor Devices"; Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; (invited) 16.12.2003 - 18.12.2003; in "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2003), ISBN: 0-7803-7749-4, 127 - 132 doi:10.1109/EDSSC.2003.1283498. BibTeX |
| 526. | T. Grasser, H. Kosina, S. Selberherr: "Rigorous Modeling of Mobilities and Relaxation Times Using Six Moments of the Distribution Function"; Talk: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 20.03.2003 - 21.03.2003; in "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6, 105 - 108. BibTeX |
| 525. | T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr: "Silicon Carbide Accumulation-Mode Laterally Diffused MOSFET"; Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3, 581 - 584. BibTeX |
| 524. | E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, B.-H. Cheong, W. B. Choi: "Simulation of Carrier Transport in Carbon Nanotube Field Effect Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3, 411 - 414. BibTeX |
| 523. | Ch. Hollauer, H. Ceric, S. Selberherr: "Simulation of Thermal Oxidation: A Three-Dimensional Finite Element Approach"; Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3, 383 - 386. BibTeX |
| 522. | A. Sheikholeslami, C. Heitzinger, H. Puchner, F. Badrieh, S. Selberherr: "Simulation of Void Formation in Interconnect Lines"; Talk: SPIE VLSI Circuits and Systems, Maspalomas, Spain; 19.05.2003 - 21.05.2003; . BibTeX |
| 521. | H. Kosina, M. Nedjalkov, S. Selberherr: "Solution of the Space-Dependent Wigner Equation Using a Particle Model"; Talk: Seminar on Monte Carlo Methods (MCM), Berlin; 15.09.2003 - 19.09.2003; in "IVth IMACS Seminar on Monte Carlo Methods", (2003), 6. BibTeX |
| 520. | F. Jimenez-Molinos, A. Palma, A. Gehring, F. Gamiz, H. Kosina, S. Selberherr: "Static and Transient Simulation of Inelastic Trap-Assisted Tunneling"; Talk: Workshop on Modeling and Simulation of Electron Devices (MSED), Barcelona; 16.10.2003 - 17.10.2003; in "14th Workshop on Modeling and Simulation of Electron Devices", (2003), ISBN: 84-688-1314-1, 65 - 68. BibTeX |
| 519. | R. Wittmann, A. Hössinger, S. Selberherr: "Statistical Analysis for the Three-Dimensional Monte Carlo Simulation of Ion Implantation"; Talk: Industrial Simulation Conference (ISC), Valencia; 09.06.2003 - 11.06.2003; in "Industrial Simulation Conference 2003", (2003), ISBN: 90-77381-03-1, 159 - 163. BibTeX |
| 518. | S. Smirnov, H. Kosina, S. Selberherr: "Substrate Orientation-Dependence of Electron Mobility in Strained SiGe Layers"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 55 - 58 doi:10.1109/SISPAD.2003.1233636. BibTeX |
| 517. | H. Kosina, M. Nedjalkov: "The Wigner Equation for Quantum Device Modeling"; Talk: Workshop on Quantum and Many-Body Effects in Nanoscale Devices, Arizona State University; (invited) 24.10.2003 - 25.10.2003; . BibTeX |
| 516. | Ch. Hollauer, H. Ceric, S. Selberherr: "Three-Dimensional Modeling of Thermal Oxidation of Silicon by Means of the Finite Element Method"; Talk: Industrial Simulation Conference (ISC), Valencia; 09.06.2003 - 11.06.2003; in "Industrial Simulation Conference 2003", (2003), ISBN: 90-77381-03-1, 154 - 158. BibTeX |
| 515. | H. Kosina: "VMC: a Code for Monte Carlo Simulation of Quantum Transport"; Talk: MEL-ARI/NID Workshop, Cork; 23.06.2003 - 25.06.2003; in "Proc. 12th MEL-ARI/NID Workshop", (2003), . BibTeX |
| 514. | C. Heitzinger, S. Selberherr: "A Calibrated Model for Silicon Self-Interstitial Cluster Formation and Dissolution"; Talk: International Conference on Microelectronics (MIEL), Nis; 12.05.2002 - 15.05.2002; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2002), 2, 431 - 434 doi:10.1109/MIEL.2002.1003291. BibTeX |
| 513. | A. Gehring, T. Grasser, H. Kosina, S. Selberherr: "A New Gate Current Model Accounting for a Non-Maxwellian Electron Energy Distribution Function"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 235 - 238 doi:10.1109/SISPAD.2002.1034560. BibTeX |
| 512. | H. Kosina, M. Nedjalkov, S. Selberherr: "A Particle Model for Wigner Transport through Tunneling Structures"; Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 25.09.2002 - 28.09.2002; in "Advances in Simulation, Systems Theory, and Systems Engineering", (2002), ISBN: 960-8052-70-x, 136 - 139. BibTeX |
| 511. | T. Binder, H. Ceric, A. Hössinger, S. Selberherr: "A Strategy to Enforce the Discrete Minimax Principle on Finite Element Meshes"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 183 - 186 doi:10.1109/SISPAD.2002.1034547. BibTeX |
| 510. | H. Ceric, S. Selberherr: "An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 253 - 256 doi:10.1109/SISPAD.2002.1034566. BibTeX |
| 509. | T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr: "An Impact Ionization Model Including an Explicit Cold Carrier Population"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 21.04.2002 - 25.04.2002; in "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1, 572 - 575. BibTeX |
| 508. | R. Klima, T. Grasser, S. Selberherr: "Controlling Scheme of the Device Simulator MINIMOS-NT"; Talk: European Simulation Symposium (ESS), Dresden; 23.10.2002 - 26.10.2002; in "Proceedings European Simulation Symposium", (2002), ISBN: 3-936150-22-2, 80 - 84. BibTeX |
| 507. | V. Palankovski, S. Wagner, T. Grasser, R. Schultheis, S. Selberherr: "Direct S-Parameter Extraction by Physical Two-Dimensional Device AC-Simulation"; Poster: International Symposium on Compound Semiconductors (ISCS), Lausanne; 07.10.2002 - 10.10.2002; in "Proceedings of the Intl. Symposium on Compound Semiconductors", (2002), ISBN: 0-7503-0942-3, 303 - 306. BibTeX |
| 506. | V. Gopinath, S. Aronowitz, V. Palankovski, S. Selberherr: "Effects of Stress-Induced Bandgap Narrowing on Reverse-Biased Junction Behavior"; Poster: European Solid-State Device Research Conference (ESSDERC), Florence; 24.09.2002 - 26.09.2002; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2, 631 - 634 doi:10.1109/ESSDERC.2002.195010. BibTeX |
| 505. | H. Ceric, S. Selberherr: "Electromigration Induced Evolution of Voids in Current Crowding Areas of Interconnects"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 08.07.2002 - 12.07.2002; in "Proceedings of the 13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2002), ISBN: 0-7803-7416-9, 140 - 144. BibTeX |
| 504. | P. Fleischmann, S. Selberherr: "Enhanced Advancing Front Delaunay Meshing in TCAD"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 99 - 102 doi:10.1109/SISPAD.2002.1034526. BibTeX |
| 503. | J.M. Park, R. Klima, S. Selberherr: "High-Voltage Lateral Trench Gate SOI LDMOSFETs"; Poster: International Seminar on Power Semiconductors (ISPS), Prague; 04.09.2002 - 06.09.2002; in "Proceedings ISPS 2002", (2002), ISBN: 80-01-02595-0, 241 - 244. BibTeX |
| 502. | R. Minixhofer, G. Röhrer, S. Selberherr: "Implementation of an Automated Interface for Integration of TCAD with Semiconductor Fabrication"; Talk: European Simulation Symposium (ESS), Dresden; 23.10.2002 - 26.10.2002; in "Proceedings European Simulation Symposium", (2002), ISBN: 3-936150-22-2, 70 - 74. BibTeX |
| 501. | S. Smirnov, H. Kosina, S. Selberherr: "Investigation of the Electron Mobility in Strained Si1-x Gex at High Ge Composition"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 29 - 32 doi:10.1109/SISPAD.2002.1034509. BibTeX |
| 500. | J.M. Park, R. Klima, S. Selberherr: "Lateral Trench Gate Super-Junction SOI-LDMOSFETs with Low On-Resistance"; Talk: European Solid-State Device Research Conference (ESSDERC), Florence; 24.09.2002 - 26.09.2002; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2, 283 - 286. BibTeX |
| 499. | R. Rodriguez-Torres, E. Gutierrez, A. Sarmiento, S. Selberherr: "Macro-Modeling for MOS Device Simulation"; Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Oranjestad; 17.04.2002 - 19.04.2002; in "Proceedings of the ICCDCS 2002", (2002), D012, ISBN: 0-7803-7380-4, 1 - 5. BibTeX |
| 498. | T. Grasser, A. Gehring, S. Selberherr: "Macroscopic Transport Models for Microelectronics Devices"; Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; (invited) 14.07.2002 - 18.07.2002; in "The 6th World Multiconference on Systemics, Cybernetics and Informatics", (2002), ISBN: 980-07-8150-1, 223 - 228. BibTeX |
| 497. | A. Gehring, T. Grasser, S. Selberherr: "Non-Parabolicity and Non-Maxwellian Effects on Gate Oxide Tunneling"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 21.04.2002 - 25.04.2002; in "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1, 560 - 563. BibTeX |
| 496. | C. Heitzinger, S. Selberherr, J. Fugger, O. Häberlen: "On Increasing the Accuracy of Simulations of Deposition and Etching Processes Using Radiosity and the Level Set Method"; Talk: European Solid-State Device Research Conference (ESSDERC), Florence; 24.09.2002 - 26.09.2002; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2, 347 - 350. BibTeX |
| 495. | C. Heitzinger, S. Selberherr: "On the Topography Simulation of Memory Cell Trenches for Semiconductor Manufacturing Deposition Processes Using the Level Set Method"; Talk: European Simulation Multiconference (ESM), Darmstadt; 03.06.2002 - 05.06.2002; in "16th European Simulation Multiconference", (2002), ISBN: 90-77039-07-4, 653 - 660. BibTeX |
| 494. | C. Heitzinger, A. Sheikholeslami, S. Selberherr: "Predictive Simulation of Etching and Deposition Processes Using the Level Set Method"; Poster: International Workshop on Challenges in Predictive Process Simulation (ChiPPS), Prague; 13.10.2002 - 17.10.2002; in "ChiPPS-2002 Challenges in Predictive Process Simulation", (2002), 65 - 66. BibTeX |
| 493. | S. Selberherr: "Recent Advances in Transport Modeling for Miniaturized CMOS Devices"; Talk: IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba; (invited) 17.04.2002. BibTeX |
| 492. | T. Grasser, A. Gehring, S. Selberherr: "Recent Advances in Transport Modeling for Miniaturized CMOS Devices"; Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Aruba; (invited) 17.04.2002 - 19.04.2002; in "Proceedings of the ICCDCS 2002", (2002), D027, ISBN: 0-7803-7380-4, 1 - 8. BibTeX |
| 491. | C. Heitzinger, J. Fugger, O. Häberlen, S. Selberherr: "Simulation and Inverse Modeling of TEOS Deposition Processes Using a Fast Level Set Method"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 191 - 194 doi:10.1109/SISPAD.2002.1034549. BibTeX |
| 490. | A. Gehring, F. Jimenez-Molinos, A. Palma, H. Kosina, S. Selberherr: "Simulation of Non-Volatile Memory Cells by Accounting for Inelastic Trap-Assisted Tunneling Current"; Talk: Workshop on Ultimate Integration of Silicon (ULIS), München; 07.03.2002 - 08.03.2002; in "3rd European Workshop on Ultimate Integration of Silicon", (2002), 15 - 18. BibTeX |
| 489. | M. Gritsch, H. Kosina, T. Grasser, S. Selberherr: "Simulation of a "Well Tempered" SOI MOSFET using an Enhanced Hydrodynamic Transport Model"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 195 - 198 doi:10.1109/SISPAD.2002.1034550. BibTeX |
| 488. | V. Palankovski: "Simulation von SiGe Bauelementen"; Talk: GMM Workshop, München; (invited) 24.04.2002 - 25.04.2002; . BibTeX |
| 487. | H. Ceric, S. Selberherr: "Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Rimini; 07.10.2002 - 11.10.2002; . BibTeX |
| 486. | S. Wagner, V. Palankovski, T. Grasser, R. Schultheis, S. Selberherr: "Small-Signal Analysis and Direct S-Parameter Extraction"; Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester; 18.11.2002 - 19.11.2002; in "The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2002), ISBN: 0-7803-7530-0, 50 - 55 doi:10.1109/EDMO.2002.1174929. BibTeX |
| 485. | M. Nedjalkov, H. Kosina, S. Selberherr: "Stochastic Interpretation of the Wigner Transport in Nanostructures"; Talk: International Conference on Low Dimensional Structures and Devices, Fortaleza-Ceara; 08.12.2002 - 13.12.2002; in "Fourth International Conference on Low Dimensional Structures and Devices", (2002), 5. BibTeX |
| 484. | R. Klima, T. Grasser, S. Selberherr: "The Control System of the Device Simulator MINIMOS-NT"; Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 25.09.2002 - 28.09.2002; in "Advances in Simulation, Systems Theory, and Systems Engineering", (2002), ISBN: 960-8052-70-x, 281 - 284. BibTeX |
| 483. | M. Gritsch, H. Kosina, T. Grasser, S. Selberherr, T. Linton, S. Singh, S. Yu, M. Giles: "The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 21.04.2002 - 25.04.2002; in "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1, 544 - 547. BibTeX |
| 482. | V. Palankovski, R. Klima, R. Schultheis, S. Selberherr: "Three-Dimensional Analysis of Leakage Currents in III-V HBTs"; Talk: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Monterey; 20.10.2002 - 23.10.2002; in "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2002), ISBN: 0-7803-7447-9, 229 - 232 doi:10.1109/GAAS.2002.1049066. BibTeX |
| 481. | R. Rodriguez-Torres, E. Gutierrez, R. Klima, S. Selberherr: "Three-Dimensional Analysis of a MAGFET at 300 K and 77 K"; Talk: European Solid-State Device Research Conference (ESSDERC), Florence; 24.09.2002 - 26.09.2002; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2, 151 - 154. BibTeX |
| 480. | A. Gehring, H. Kosina, S. Selberherr: "Transmission Coefficient Estimation for High-k Gate Stack Evaluation"; Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 25.09.2002 - 28.09.2002; in "Advances in Simulation, Systems Theory, and Systems Engineering", (2002), ISBN: 960-8052-70-x, 156 - 159. BibTeX |
| 479. | K. Dragosits, V. Palankovski, S. Selberherr: "Two-Dimensional Modeling of Quantum Mechanical Effects in Ultra-Short CMOS Devices"; Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 25.09.2002 - 28.09.2002; in "Advances in Simulation, Systems Theory, and Systems Engineering", (2002), ISBN: 960-8052-70-x, 113 - 116. BibTeX |
| 478. | M. Nedjalkov, R. Kosik, H. Kosina, S. Selberherr: "Wigner Transport through Tunneling Structures - Scattering Interpretation of the Potential Operator"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 187 - 190 doi:10.1109/SISPAD.2002.1034548. BibTeX |
| 477. | C. Harlander, R. Sabelka, S. Selberherr: "A Comparative Study of Two Numerical Techniques for Inductance Calculation in Interconnect Structures"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 254 - 257 doi:10.1007/978-3-7091-6244-6_56. BibTeX |
| 476. | H. Kosina, R. Kosik, M. Nedjalkov: "A Hierarchy of Kinetic Equations for Quantum Device Simulation"; Talk: Conference on Applied Mathematics in our Changing World, Berlin; (invited) 02.09.2001 - 06.09.2001; in "Proceedings First SIAM-EMS Conference on Applied Mathematics in our Changing World", (2001), 24. BibTeX |
| 475. | V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr: "A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 428 - 431 doi:10.1007/978-3-7091-6244-6_99. BibTeX |
| 474. | T. Grasser, H. Kosina, M. Gritsch, S. Selberherr: "A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 19.03.2001 - 21.03.2001; in "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4, 474 - 477. BibTeX |
| 473. | T. Binder, C. Heitzinger, S. Selberherr: "A Qualitative Study on Global and Local Optimization Techniques for TCAD Analysis Tasks"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 19.03.2001 - 21.03.2001; in "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4, 466 - 469. BibTeX |
| 472. | R. Quay, R. Schultheis, W. Kellner, V. Palankovski, S. Selberherr: "A Review of Modeling Issues for RF Heterostructure Device Simulation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 432 - 435 doi:10.1007/978-3-7091-6244-6_100. BibTeX |
| 471. | M. Gritsch, H. Kosina, T. Grasser, S. Selberherr: "A Simulation Study of Partially Depleted SOI MOSFETs"; Talk: Symposium on Silicon-on-Insulator Technology and Devices, Washington; 25.03.2001 - 29.03.2001; in "Proceedings Symp. on Silicon-on-Insulator Technology and Devices", (2001), ISBN: 1-56677-309-1, 181 - 186. BibTeX |
| 470. | M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr: "A Space Dependent Wigner Equation Including Phonon Interaction"; Talk: International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA; 15.09.2001 - 18.09.2001; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2001), 4. BibTeX |
| 469. | M. Nedjalkov, R. Kosik, H. Kosina, S. Selberherr: "A Wigner Equation for the Nanometer and Femtosecond Transport Regime"; Talk: IEEE Conference on Nanotechnology (NANO), Maui; 28.10.2001 - 30.10.2001; in "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2001), ISBN: 0-7803-7215-8, 277 - 281 doi:10.1109/NANO.2001.966433. BibTeX |
| 468. | T. Grasser, H. Kosina, M. Gritsch, S. Selberherr, H. Puchner, S. Aronowitz: "Accurate Simulation of Substrate Currents by Accounting for the Hot Electron Tail Population"; Talk: European Solid-State Device Research Conference (ESSDERC), Nürnberg; 11.09.2001 - 13.09.2001; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2001), ISBN: 2-914601-01-8, 215 - 218. BibTeX |
| 467. | A. Hössinger, T. Binder, W. Pyka, S. Selberherr: "Advanced Hybrid Cellular Based Approach for Three-Dimensional Etching and Deposition Simulation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 424 - 427 doi:10.1007/978-3-7091-6244-6_98. BibTeX |
| 466. | H. Kosina, M. Nedjalkov, S. Selberherr: "An Event Bias Technique for Monte Carlo Device Simulation"; Talk: Seminar on Monte Carlo Methods (MCM), Salzburg; 10.09.2001 - 14.09.2001; in "Program and Abstracts 3rd IMACS Seminar on Monte Carlo Methods", (2001), 141 - 143. BibTeX |
| 465. | T. Grasser, H. Kosina, S. Selberherr: "An Impact Ionization Model Including Non-Maxwellian and Non-Parabolicity Effects"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 46 - 49 doi:10.1007/978-3-7091-6244-6_10. BibTeX |
| 464. | H. Kosina, M. Gritsch, T. Grasser, T. Linton, S. Yu, M. Giles, S. Selberherr: "An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs"; Poster: International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA; 15.09.2001 - 18.09.2001; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2001), 67. BibTeX |
| 463. | K. Dragosits, Y. Ponomarev, C. Dachs, S. Selberherr: "Analysis of Ultra Short MOSFETs with High-K Gate Dielectrics"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 412 - 415 doi:10.1007/978-3-7091-6244-6_95. BibTeX |
| 462. | A. Wolf, T. Grasser, S. Selberherr: "Automatic Binding of SPICE Models to the Device/Circuit Simulator MINIMOS-NT"; Talk: European Simulation Multiconference (ESM), Prag; 06.06.2001 - 09.06.2001; in "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3, 314 - 318. BibTeX |
| 461. | M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr: "Boundary Condition Models for Terminal Current Fluctuations"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 152 - 155 doi:10.1007/978-3-7091-6244-6_34. BibTeX |
| 460. | R. Klima, T. Grasser, S. Selberherr: "Controlling TCAD Applications with an Object-Oriented Dynamic Database"; Talk: European Simulation Multiconference (ESM), Prag; 06.06.2001 - 09.06.2001; in "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3, 161 - 165. BibTeX |
| 459. | S. Selberherr: "Current Transport Models for Engineering Applications"; Talk: Advanced Research Workshop on Future Trends in Microelectronics, Ile de Bendor; 25.06.2001 - 29.06.2001; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: The Nano Millenium", (2001), ISBN: 0-471-21247-4, 54. BibTeX |
| 458. | A. Gehring, T. Grasser, S. Selberherr: "Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer Matrix Method"; Poster: International Semiconductor Device Research Symposium (ISDRS), Washington; 05.12.2001 - 07.12.2001; in "2001 International Semiconductor Device Research Symposium", (2001), 260 - 263. BibTeX |
| 457. | T.V. Gurov, M. Nedjalkov, P.A. Whitlock, H. Kosina, S. Selberherr: "Femtosecond Relaxation of Hot Electrons by Phonon Emission in Presence of Electric Field"; Poster: International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS), Santa Fe; 27.08.2001 - 31.08.2001; in "Proceedings 12th International Conference on Nonequilibrium Carrier Dynamics", (2001), 27. BibTeX |
| 456. | J. Cervenka, M. Knaipp, A. Hössinger, S. Selberherr: "Green's Function Approach for Three-Dimensional Diffusion Simulation of Industrial High Voltage Applications"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 408 - 411 doi:10.1007/978-3-7091-6244-6_94. BibTeX |
| 455. | T. Grasser, H. Kosina, S. Selberherr: "Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation"; Talk: International Conference on the Experience of Designing and Application of CAD Systems in Microelectronics, Lviv-Slavsko; (invited) 12.02.2001 - 17.02.2001; in "The Experience of Designing and Application of CAD Systems in Microelectronics", (2001), ISBN: 966-553-079-8, 19 - 30. BibTeX |
| 454. | T. Grasser, H. Kosina, S. Selberherr: "Investigation of Spurious Velocity Overshoot Using Monte Carlo Data"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 54 - 57 doi:10.1007/978-3-7091-6244-6_12. BibTeX |
| 453. | T. Grasser, S. Selberherr: "Limitations of Hydrodynamic and Energy-Transport Models"; Talk: V. Kumar, P.K. Basu (ed); International Workshop on Processes of Semiconductor Devices, Delhi; (invited) 11.12.2001 - 15.12.2001; in "Physics of Semiconductor Devices", (2001), ISBN: 81-7764-223-5, 584 - 591. BibTeX |
| 452. | W. Pyka, C. Heitzinger, N. Tamaoki, T. Takase, T. Ohmine, S. Selberherr: "Monitoring Arsenic In-Situ Doping with Advanced Models for Poly-Silicon CVD"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 124 - 127 doi:10.1007/978-3-7091-6244-6_27. BibTeX |
| 451. | M. Nedjalkov, H. Kosina, S. Selberherr: "Monte Carlo Algorithms for Stationary Device Simulation"; Talk: Seminar on Monte Carlo Methods (MCM), Salzburg; 10.09.2001 - 14.09.2001; in "Program and Abstracts 3rd IMACS Seminar on Monte Carlo Methods", (2001), 58 - 59. BibTeX |
| 450. | H. Kosina, M. Nedjalkov, S. Selberherr: "Monte Carlo Analysis of the Small-Signal Response of Charge Carriers"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 06.06.2001 - 10.06.2001; in "Abstracts of the 3rd International Conference on Large-Scale Scientific Computations", (2001), A-23. BibTeX |
| 449. | J.M. Park, T. Grasser, H. Kosina, S. Selberherr: "Numerical Study of Partial-SOI LDMOSFET Power Devices"; Poster: International Semiconductor Device Research Symposium (ISDRS), Washington; 05.12.2001 - 07.12.2001; in "2001 International Semiconductor Device Research Symposium", (2001), 114 - 117. BibTeX |
| 448. | C. Heitzinger, S. Selberherr: "Optimization for TCAD Purposes Using Bernstein Polynomials"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 420 - 423 doi:10.1007/978-3-7091-6244-6_97. BibTeX |
| 447. | V. Palankovski, G. Röhrer, E. Wachmann, J. Kraft, B. Löffler, J. Cervenka, R. Quay, T. Grasser, S. Selberherr: "Optimization of High-Speed SiGe HBTs"; Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Wien; 15.11.2001 - 16.11.2001; in "Proceedings Intl. Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2001), ISBN: 0-7803-7049-x, 187 - 191 doi:10.1109/EDMO.2001.974305. BibTeX |
| 446. | J. Cervenka, P. Fleischmann, S. Selberherr, M. Knaipp, F. Unterleitner: "Optimization of Industrial High Voltage Structures by Three-Dimensional Diffusion Simulation"; Talk: European Solid-State Device Research Conference (ESSDERC), Nürnberg; 11.09.2001 - 13.09.2001; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2001), ISBN: 2-914601-01-8, 227 - 230. BibTeX |
| 445. | C. Heitzinger, T. Binder, S. Selberherr: "Parallel TCAD Optimization and Parameter Extraction for Computationally Expensive Objective Functions"; Talk: European Simulation Multiconference (ESM), Prag; 06.06.2001 - 09.06.2001; in "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3, 534 - 538. BibTeX |
| 444. | V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr: "Reliable Prediction of Deep Sub-Quartermicron CMOS Technology Performance"; Talk: IEEE Conference on Nanotechnology (NANO), Maui; 28.10.2001 - 30.10.2001; in "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2001), ISBN: 0-7803-7215-8, 201 - 206 doi:10.1109/NANO.2001.966419. BibTeX |
| 443. | M. Gritsch, H. Kosina, T. Grasser, S. Selberherr: "Simulation of Partially Depleted SOI MOSFETs using an Improved Hydrodynamic Transport Model"; Talk: V. Kumar, P.K. Basu (ed); International Workshop on Processes of Semiconductor Devices, Delhi; 11.12.2001 - 15.12.2001; in "Physics of Semiconductor Devices", (2001), ISBN: 81-7764-223-5, 664 - 667. BibTeX |
| 442. | T. Grasser: "Simulation of SOI-Devices"; Talk: VDE/VDI GMM Workshop "Stand und Perspektiven von SOI-Technologien und Anwendungen", München; (invited) 17.05.2001 - 18.05.2001; . BibTeX |
| 441. | T. Grasser: "Simulation of Semiconductor Devices and Circuits at High Frequencies"; Talk: GMe Forum 2001, Wien; (invited) 05.04.2001 - 06.04.2001; in "Proceedings of the GMe Forum", (2001), 91 - 96. BibTeX |
| 440. | A. Gehring, C. Heitzinger, T. Grasser, S. Selberherr: "TCAD Analysis of Gain Cell Retention Time for SRAM Applications"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 416 - 419 doi:10.1007/978-3-7091-6244-6_96. BibTeX |
| 439. | T. Grasser, S. Selberherr: "Technology CAD: Device Simulation and Characterization"; Talk: Ultra Shallow Junctions Conference, Napa; (invited) 22.04.2001 - 26.04.2001; in "Sixth International Workshop on the Fabrication, Characterization, and Modeling of Ultra Shallow Doping Profiles in Semiconductors", (2001), 4 - 11. BibTeX |
| 438. | C. Harlander, R. Sabelka, S. Selberherr: "Three-Dimensional Electro-Thermal Simulation of Interconnect Structures with Temperature-Dependent Permittivity"; Talk: International Intersociety, Electronic Packaging Technical Conference (InterPACK), Kauai; 08.07.2001 - 13.07.2001; in "The Pacific RIM/International Intersociety, Electronic Packaging Technical/Business Conference & Exhibition", (2001), 1 - 2. BibTeX |
| 437. | H. Kosina, M. Nedjalkov, S. Selberherr: "Variance Reduction in Monte Carlo Device Simulation by Means of Event Biasing"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 19.03.2001 - 21.03.2001; in "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4, 11 - 14. BibTeX |
| 436. | H. Kosina, M. Nedjalkov, S. Selberherr: "Variance and Covariance Estimation in Stationary Monte Carlo Device Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 140 - 143 doi:10.1007/978-3-7091-6244-6_31. BibTeX |
| 435. | M. Nedjalkov, H. Kosina, S. Selberherr, I. Dimov: "A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors"; Poster: International Workshop on Computational Electronics (IWCE), Glasgow, UK; 22.05.2000 - 25.05.2000; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2000), ISBN: 0-85261-704-6, 144 - 145 doi:10.1109/IWCE.2000.869966. BibTeX |
| 434. | T. Grasser, R. Quay, V. Palankovski, S. Selberherr: "A Global Self-Heating Model for Device Simulation"; Talk: European Solid-State Device Research Conference (ESSDERC), Cork; 11.09.2000 - 13.09.2000; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6, 324 - 327 doi:10.1109/ESSDERC.2000.194780. BibTeX |
| 433. | C. Troger, H. Kosina, S. Selberherr: "A Stable Schrödinger-Poisson Solver to Investigate Quantum Effects in Modern MOSFETs"; Talk: Workshop on Ultimate Integration of Silicon (ULIS), Grenoble; 20.01.2000 - 21.01.2000; in "European Workshop on Ultimate Integration of Silicon", (2000), 123 - 126. BibTeX |
| 432. | C. Heitzinger, S. Selberherr: "An Extensible TCAD Optimization Framework Combining Gradient Based and Genetic Optimizers"; Talk: SPIE Design, Modeling, and Simulation in Microelectronics, Singapur; 28.11.2000 - 30.11.2000; . BibTeX |
| 431. | V. Palankovski, S. Selberherr, R. Quay, R. Schultheis: "Analysis of HBT Behavior After Strong Electrothermal Stress"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; 06.09.2000 - 08.09.2000; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9, 245 - 248 doi:10.1109/SISPAD.2000.871254. BibTeX |
| 430. | M. Stockinger, S. Selberherr: "Automatic Device Design Optimization with TCAD Frameworks"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Diego; (invited) 26.03.2000 - 29.03.2000; in "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (2000), ISBN: 0-9666135-7-0, 1 - 6. BibTeX |
| 429. | R. Klima, T. Grasser, T. Binder, S. Selberherr: "Controlling TCAD Applications with a Dynamic Database"; Talk: International Conference on Software Engineering and Applications (SEA), Las Vegas; 06.11.2000 - 09.11.2000; in "Proceedings of the IASTED Intl. Conf. on Software Engineering and Applications", (2000), ISBN: 0-88986-306-7, 103 - 112. BibTeX |
| 428. | V. Palankovski, R. Schultheis, A. Bonacina, S. Selberherr: "Effectiveness of Silicon Nitride Passivation in III-V Based HBTs"; Poster: International Conference on Defects in Insulating Materials, Johannesburg; 03.04.2000 - 07.04.2000; in "Abstracts Intl. Conf. on Defects in Insulating Materials", (2000), 188. BibTeX |
| 427. | T. Grasser, S. Selberherr: "Electro-Thermal Effects in Mixed-Mode Device Simulation"; Talk: International Semiconductor Conference (CAS), Sinaia; (invited) 10.10.2000 - 14.10.2000; in "Proceedings CAS 2000 Conference", (2000), ISBN: 0-7803-5885-6, 43 - 52. BibTeX |
| 426. | V. Palankovski, S. Selberherr: "III-V Semiconductor Materials in MINIMOS-NT"; Poster: Materials Research Society Spring Meeting (MRS), San Francisco; 24.04.2000 - 28.04.2000; in "Abstracts MRS Spring Meeting", (2000), 249. BibTeX |
| 425. | W. Pyka, S. Selberherr, V. Sukharev: "Incorporation of Equipment Simulation into Integrated Feature Scale Profile Evolution"; Talk: European Solid-State Device Research Conference (ESSDERC), Cork; 11.09.2000 - 13.09.2000; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6, 180 - 183. BibTeX |
| 424. | C. Harlander, R. Sabelka, S. Selberherr: "Inductance Calculation in Interconnect Structures"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Diego; 26.03.2000 - 29.03.2000; in "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (2000), ISBN: 0-9666135-7-0, 416 - 419. BibTeX |
| 423. | V. Palankovski, R. Quay, S. Selberherr: "Industrial Application of Heterostructure Device Simulation"; Talk: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Seattle; (invited) 05.11.2000 - 08.11.2000; in "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2000), ISBN: 0-7803-5968-2, 117 - 120 doi:10.1109/GAAS.2000.906305. BibTeX |
| 422. | M. Gritsch, H. Kosina, C. Fischer, S. Selberherr: "Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs"; Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada; 25.10.2000 - 27.10.2000; in "Proceedings EUROSOI 2000", (2000), 1 - 4. BibTeX |
| 421. | V. Palankovski, R. Schultheis, A. Bonacina, S. Selberherr: "Investigations on the Impact of the InGaP Ledge on HBT-Performance"; Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Aegean See; 29.05.2000 - 02.06.2000; in "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (2000), ISBN: 0-9703111-0-9, 5 - 6. BibTeX |
| 420. | T. Grasser, S. Selberherr: "Mixed-Mode Device Simulation"; Talk: International Conference on Microelectronics (MIEL), Nis; (invited) 14.05.2000 - 17.05.2000; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2000), ISBN: 0-7803-5235-1, 35 - 42 doi:10.1109/ICMEL.2000.840528. BibTeX |
| 419. | T. Binder, S. Selberherr: "Object-Oriented Design Patterns for Process Flow Simulations"; Talk: International Conference on Software Engineering and Applications (SEA), Las Vegas; 06.11.2000 - 09.11.2000; in "Proceedings of the IASTED Intl. Conf. on Software Engineering and Applications", (2000), ISBN: 0-88986-306-7, 159 - 166. BibTeX |
| 418. | T. Binder, S. Selberherr: "Object-Oriented Wafer-State Services"; Talk: European Simulation Multiconference (ESM), Ghent; 23.05.2000 - 26.05.2000; in "Proceedings European Simulation Multiconference ESM 2000", (2000), ISBN: 1-56555-204-0, 360 - 364. BibTeX |
| 417. | A. Hössinger, E. Langer: "Parallel Monte Carlo Simulation of Ion Implantation"; Talk: International Conference on Ion Implantation Technology, Cork; (invited) 17.09.2000 - 22.09.2000; in "Proceedings 13th Intl. Conf. on Ion Implantation Technology", (2000), 203 - 208. BibTeX |
| 416. | R. Sabelka, C. Harlander, S. Selberherr: "Propagation of RF Signals in Microelectronic Structures"; Talk: International Workshop on Challenges in Predictive Process Simulation (ChiPPS), Wandlitz; (invited) 14.05.2000 - 18.05.2000; in "Abstracts Challenges in Predictive Process Simulation Meeting", (2000), 50 - 51. BibTeX |
| 415. | K. Dragosits, S. Selberherr: "Simulation of Ferroelectric Materials with MINIMOS-NT"; Poster: Materials Research Society Spring Meeting (MRS), San Francisco; 24.04.2000 - 28.04.2000; in "Abstracts MRS Spring Meeting", (2000), 249. BibTeX |
| 414. | K. Dragosits, S. Selberherr: "Simulation of Ferroelectric Nonvolatile Memory Cells with MINIMOS-NT"; Talk: International Conference on Micro Materials, Berlin; 17.05.2000 - 19.05.2000; in "Abstracts Intl. Conf. on Micro Materials", (2000), ISBN: 3-932434-14-5, 81 - 82. BibTeX |
| 413. | K. Dragosits, S. Selberherr: "Simulation of Ferroelectric Nonvolatile Memory Cells with MINIMOS-NT"; Talk: International Conference on Micro Materials, Berlin; 17.05.2000 - 19.05.2000; in "Proceedings of the 3rd Intl. Micro Materials Conference", (2000), ISBN: 3-932434-15-3, 1023 - 1026. BibTeX |
| 412. | K. Dragosits, S. Selberherr: "Simulation of Ferroelectric Thin Films"; Poster: International Conference on Defects in Insulating Materials, Johannesburg; 03.04.2000 - 07.04.2000; in "Abstracts Intl. Conf. on Defects in Insulating Materials", (2000), 179. BibTeX |
| 411. | R. Quay, H. Massler, W. Kellner, T. Grasser, V. Palankovski, S. Selberherr: "Simulation of Gallium-Arsenide Based High Electron Mobility Transistors"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; 06.09.2000 - 08.09.2000; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9, 74 - 77 doi:10.1109/SISPAD.2000.871210. BibTeX |
| 410. | R. Quay, V. Palankovski, M. Chertouk, A. Leuther, S. Selberherr: "Simulation of InAlAs/InGaAs High Electron Mobility Transistors with a Single Set of Physical Parameters"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 10.12.2000 - 13.12.2000; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2000), ISBN: 0-7803-6438-4, 186 - 189 doi:10.1109/IEDM.2000.904289. BibTeX |
| 409. | V. Palankovski, T. Grasser, M. Knaipp, S. Selberherr: "Simulation of Polysilicon Emitter Bipolar Transistors"; Poster: European Solid-State Device Research Conference (ESSDERC), Cork; 11.09.2000 - 13.09.2000; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6, 608 - 611 doi:10.1109/ESSDERC.2000.194851. BibTeX |
| 408. | V. Palankovski, S. Selberherr: "State-of-the-art Micro Materials Models in MINIMOS-NT"; Talk: International Conference on Micro Materials, Berlin; 17.05.2000 - 19.05.2000; in "Proceedings of the 3rd Intl. Micro Materials Conference", (2000), Dresden, ISBN: 3-932434-15-3, 714 - 717. BibTeX |
| 407. | V. Palankovski, S. Selberherr: "State-of-the-art Micro Materials Models in MINIMOS-NT"; Talk: International Conference on Micro Materials, Berlin; 17.05.2000 - 19.05.2000; in "Abstracts Intl. Conf. on Micro Materials", (2000), ISBN: 3-932434-14-5, 290 - 291. BibTeX |
| 406. | R. Sabelka, C. Harlander, S. Selberherr: "The State of the Art in Interconnect Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; (invited) 06.09.2000 - 08.09.2000; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9, 6 - 11 doi:10.1109/SISPAD.2000.871194. BibTeX |
| 405. | K. Dragosits, R. Hagenbeck, S. Selberherr: "Transient Simulation of Ferroelectric Hysteresis"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Diego; 26.03.2000 - 29.03.2000; in "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (2000), ISBN: 0-9666135-7-0, 433 - 436. BibTeX |
| 404. | K. Dragosits, R. Kosik, S. Selberherr: "Two-Dimensional Simulation of Ferroelectric Materials"; Talk: International Symposium on Integrated Ferroelectrics (ISIF), Aachen; 12.03.2000 - 15.03.2000; in "Abstracts Intl. Symposium on Integrated Ferroelectrics", (2000), 128. BibTeX |
| 403. | W. Pyka, V. Sukharev, K. Kumar, S. Joh, J.E. McInerney: "A 3D Integrated Simulation of Across-Wafer Metal Stack Gap-Fill for Local Interconnect Applications"; Poster: International VLSI Multilevel Interconnection Conference (VMIC), Santa Clara; 07.09.1999 - 09.09.1999; in "Proceedings of the 16th Intl. VLSI Multilevel Interconnection Conf.", (1999), 477 - 479. BibTeX |
| 402. | A. Burenkov, K. Tietzel, A. Hössinger, J. Lorenz, H. Ryssel, S. Selberherr: "A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0, 55 - 58 doi:10.1109/SISPAD.1999.799258. BibTeX |
| 401. | V. Palankovski, B. Gonzalez, H. Kosina, A. Hernandez, S. Selberherr: "A New Analytical Energy Relaxation Time Model for Device Simulation"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 19.04.1999 - 21.04.1999; in "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6, 395 - 398. BibTeX |
| 400. | T. Binder, S. Selberherr: "A Parallel Finite Oct-Tree for Multi-Threaded Insert, Delete, and Search Operations"; Talk: International Conference on Applied Modelling and Simulation, Cairns; 01.09.1999 - 03.09.1999; in "Proceedings Intl. Conf. on Applied Modelling and Simulation", (1999), ISBN: 0-88986-259-1, 613 - 616. BibTeX |
| 399. | V. Palankovski, R. Strasser, H. Kosina, S. Selberherr: "A Systematic Approach for Model Extraction for Device Simulation Application"; Talk: International Conference on Applied Modelling and Simulation, Cairns; 01.09.1999 - 03.09.1999; in "Proceedings Intl. Conf. on Applied Modelling and Simulation", (1999), ISBN: 0-88986-259-1, 463 - 466. BibTeX |
| 398. | R. Quay, C. Moglestue, V. Palankovski, S. Selberherr: "A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials"; Talk: Materials Research Society Spring Meeting (MRS), Strasbourg; 01.06.1999 - 04.06.1999; in "Abstracts E-MRS Spring Meeting", (1999), L-7. BibTeX |
| 397. | M. Radi, S. Selberherr: "AMIGOS - A Rapid Prototyping System"; Talk: International Conference on Applied Informatics, Innsbruck; 15.02.1999 - 18.02.1999; in "Proceedings IASTED Intl. Conf. on Applied Informatics", (1999), ISBN: 0-88986-241-9, 372 - 374. BibTeX |
| 396. | A. Hössinger, S. Selberherr: "Accurate Three-Dimensional Simulation of Damage Caused by Ion Implantation"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 19.04.1999 - 21.04.1999; in "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6, 363 - 366. BibTeX |
| 395. | S. Selberherr: "Aktuelle Entwicklungen der Mikroelektronik"; Talk: Informationstagung Mikroelektronik (ME), Wien; (invited) 29.09.1999 - 30.09.1999; in "Proceedings Mikroelektronik, Elektrotechnik und Informationstechnik 1999", (1999), 116, 485 - 490 doi:10.1007/BF03158944. BibTeX |
| 394. | B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr: "An Analytical Model for the Electron Energy Relaxation Time"; Talk: Conference De Dispositivos Electronicos, Madrid; 10.06.1999 - 11.06.1999; in "Proceedings Conf. De Dispositivos Electronicos", (1999), ISBN: 84-00-07819-5, 263 - 266. BibTeX |
| 393. | B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr: "An Energy Relaxation Time Model for Device Simulation"; Talk: International Conference on Modelling and Simulation, Philadelphia; 05.05.1999 - 08.05.1999; in "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1999), ISBN: 0-88986-247-8, 367 - 370. BibTeX |
| 392. | M. Stockinger, S. Selberherr: "Closed-Loop CMOS Gate Delay Time Optimization"; Talk: European Solid-State Device Research Conference (ESSDERC), Leuven; 13.09.1999 - 15.09.1999; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1999), ISBN: 2-86332-245-1, 504 - 507. BibTeX |
| 391. | M. Stockinger, R. Strasser, R. Plasun, A. Wild, S. Selberherr: "Closed-Loop MOSFET Doping Profile Optimization for Portable Systems"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 19.04.1999 - 21.04.1999; in "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6, 411 - 413. BibTeX |
| 390. | B. Haindl, R. Kosik, P. Fleischmann, S. Selberherr: "Comparison of Finite Element and Finite Box Discretization for Three-Dimensional Diffusion Modeling Using AMIGOS"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0, 131 - 134 doi:10.1109/SISPAD.1999.799278. BibTeX |
| 389. | T. Grasser, H. Kosina, S. Selberherr: "Consistent Comparison of Drift-Diffusion and Hydro-Dynamic Device Simulations"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0, 151 - 154 doi:10.1109/SISPAD.1999.799283. BibTeX |
| 388. | R. Quay, V. Palankovski, R. Reuter, M. Schlechtweg, W. Kellner, S. Selberherr: "III/V Device Optimization by Physics Based S-Parameter Simulation"; Talk: International Symposium on Compound Semiconductors (ISCS), Berlin; 22.08.1999 - 26.08.1999; in "Proceedings Intl. Symposium on Compound Semiconductors", (1999), ISBN: 0-7503-0704-8, 325 - 328. BibTeX |
| 387. | R. Strasser, R. Plasun, M. Stockinger, S. Selberherr: "Inverse Modeling of Semiconductor Devices"; Talk: Conference on Optimization, Atlanta; 10.05.1999 - 12.05.1999; in "Abstracts SIAM Conf. on Optimization", (1999), 77. BibTeX |
| 386. | P. Fleischmann, B. Haindl, R. Kosik, S. Selberherr: "Investigation of a Mesh Criterion for Three-Dimensional Finite Element Diffusion Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0, 71 - 74 doi:10.1109/SISPAD.1999.799262. BibTeX |
| 385. | W. Pyka, P. Fleischmann, B. Haindl, S. Selberherr: "Linking Three-Dimensional Topography Simulation with High Pressure CVD Reaction Kinetics"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0, 199 - 202 doi:10.1109/SISPAD.1999.799295. BibTeX |
| 384. | M. Nedjalkov, H. Kosina, S. Selberherr: "Monte-Carlo Method for Direct Computation of the Small Signal Kinetic Coefficients"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0, 155 - 158 doi:10.1109/SISPAD.1999.799284. BibTeX |
| 383. | K. Dragosits, S. Selberherr: "Numerical Aspects of the Simulation of Two-Dimensional Ferroelectric Hysteresis"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 19.04.1999 - 21.04.1999; in "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6, 309 - 312. BibTeX |
| 382. | A. Hössinger, M. Radi, B. Scholz, T. Fahringer, E. Langer, S. Selberherr: "Parallelization of a Monte-Carlo Ion Implantation Simulator for Three-Dimensional Crystalline Structures"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0, 103 - 106 doi:10.1109/SISPAD.1999.799271. BibTeX |
| 381. | A. Hössinger, E. Langer, S. Selberherr: "Performance Optimization of a Parallelized Three-Dimensional Monte-Carlo Ion Implantation Simulator"; Talk: European Simulation Symposium (ESS), Erlangen; 26.10.1999 - 28.10.1999; in "Proceedings European Simulation Symposium", (1999), ISBN: 1-56555-177-x, 649 - 651. BibTeX |
| 380. | R. Strasser, R. Plasun, S. Selberherr: "Practical Inverse Modeling with SIESTA"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0, 91 - 94 doi:10.1109/SISPAD.1999.799268. BibTeX |
| 379. | V. Palankovski, R. Quay, S. Selberherr, R. Schultheis: "S-Parameter Simulation of HBTs on Gallium-Arsenide"; Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), London; 22.11.1999 - 23.11.1999; in "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO", (1999), ISBN: 0-7803-5298-x, 15 - 19 doi:10.1109/EDMO.1999.821087. BibTeX |
| 378. | P. Fleischmann, R. Kosik, B. Haindl, S. Selberherr: "Simple Mesh Examples to Illustrate Specific Finite Element Mesh Requirements"; Talk: International Meshing Roundtable, South Lake Tahoe; 10.10.1999 - 13.10.1999; in "Proceedings 8th Intl. Meshing Roundtable", (1999), 241 - 246. BibTeX |
| 377. | V. Palankovski, S. Selberherr, R. Schultheis: "Simulation of Heterojunction Bipolar Transistors on Gallium-Arsenide"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0, 227 - 230 doi:10.1109/SISPAD.1999.799302. BibTeX |
| 376. | H. Kosina: "The Monte Carlo Method for Semi-classical Charge Transport in Semiconductor Devices"; Talk: Seminar on Monte Carlo Methods (MCM), Varna; 07.06.1999 - 11.06.1999; in "Abstracts IMACS Seminar on Monte Carlo Methods", (1999), 26 - 27. BibTeX |
| 375. | V. Palankovski, S. Selberherr: "Thermal Models for Semiconductor Device Simulation"; Talk: Conference on High Temperature Electronics (HITEN), Berlin; 04.07.1999 - 07.07.1999; in "Proceedings European Conf. on High Temperature Electronics HITEN", (1999), ISBN: 0-7803-5795-7, 25 - 28 doi:10.1109/HITEN.1999.827343. BibTeX |
| 374. | R. Quay, R. Reuter, T. Grasser, S. Selberherr: "Thermal Simulations of III/V HEMTs"; Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), London; 22.11.1999 - 23.11.1999; in "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications", (1999), ISBN: 0-7803-5298-x, 87 - 92. BibTeX |
| 373. | A. Hössinger, S. Selberherr, M. Kimura, I. Nomachi, S. Kusanagi: "Three-Dimensional Monte-Carlo Ion Implantation Simulation for Molecular Ions"; Talk: Symposium on Process Physics and Modeling in Semiconductor Technology, Seattle; 05.05.1999 - 06.05.1999; in "Proceedings Symp. on Process Physics and Modeling in Semiconductor Technology", (1999), 99-2, ISBN: 1-56677-224-9, 18 - 25. BibTeX |
| 372. | W. Pyka, H. Kirchauer, S. Selberherr: "Three-Dimensional Resist Development Simulation - Benchmarks and Integration with Lithography"; Talk: Micro- and Nano-Engineering Conference, Rom; 21.09.1999 - 23.09.1999; in "Abstracts Micro-and-Nano-Engineering 99 Conf.", (1999), 305 - 306. BibTeX |
| 371. | C. Harlander, R. Sabelka, R. Minixhofer, S. Selberherr: "Three-Dimensional Transient Electro-Thermal Simulation"; Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Rome; 03.10.1999 - 06.10.1999; in "Proceedings THERMINIC Workshop", (1999), 169 - 172. BibTeX |
| 370. | M. Nedjalkov, H. Kosina: "Variance of the Ensemble Monte Carlo Algorithm for Semiconductor Transport Modeling"; Talk: Seminar on Monte Carlo Methods (MCM), Varna; 07.06.1999 - 11.06.1999; in "Abstracts IMACS Seminar on Monte Carlo Methods", (1999), 43. BibTeX |
| 369. | R. Martins, S. Selberherr, F. Vaz: "A CMOS IC for Portable EEG Acquisition Systems"; Talk: Instrumentation and Measurement Technology Conference, St. Paul; 18.05.1998 - 21.05.1998; in "Proceedings Instrumentation and Measurement Technology Conf.", (1998), ISBN: 0-7803-4797-8, 1406 - 1410. BibTeX |
| 368. | V. Palankovski, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr: "A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 105 - 108 doi:10.1007/978-3-7091-6827-1_29. BibTeX |
| 367. | G. Kaiblinger-Grujin, T. Grasser, S. Selberherr: "A Physically-Based Electron Mobility Model for Silicon Device Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 312 - 315 doi:10.1007/978-3-7091-6827-1_78. BibTeX |
| 366. | M. Stockinger, R. Strasser, R. Plasun, A. Wild, S. Selberherr: "A Qualitative Study on Optimized MOSFET Doping Profiles"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 77 - 80 doi:10.1007/978-3-7091-6827-1_22. BibTeX |
| 365. | H. Kirchauer, S. Selberherr: "A Three-Dimensional Photolithography Simulator Including Rigorous Nonplanar Exposure Simulation for Off-Axis Illumination"; Poster: SPIE Optical Microlithography, Santa Clara, CA, USA; 22.02.1998 - 27.02.1998; in "Proceedings of SPIE Optical Microlithography", (1998), 3334·86. BibTeX |
| 364. | G. Kaiblinger-Grujin, H. Kosina, S. Selberherr: "A Universal Low-Field Electron Mobility Model for Semiconductor Device Simulation"; Poster: International Conference on Modeling and Simulation of Microsystems (MSM), Santa Clara; 06.05.1998 - 08.05.1998; in "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1998), ISBN: 0-9666135-0-3, M2.4.1.. BibTeX |
| 363. | R. Sabelka, R. Martins, S. Selberherr: "Accurate Layout-Based Interconnect Analysis"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 336 - 339 doi:10.1007/978-3-7091-6827-1_84. BibTeX |
| 362. | E. Langer, S. Selberherr: "Advanced Models, Applications, and Software Systems for High Performance Computing - Applications in Microelectronics"; Talk: Tagung des Forschungsverbund für technisch-wissenschaftliches Hochleistungsrechnen (FORTWIHR), München; (invited) 16.03.1998 - 18.03.1998; in "Abstracts Intl. FORTHWIHR Conf.", (1998), 1. BibTeX |
| 361. | M. Rottinger, N. Seifert, S. Selberherr: "Analysis of AVC Measurements"; Talk: European Solid-State Device Research Conference (ESSDERC), Bordeaux; 07.09.1998 - 09.09.1998; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1998), ISBN: 2-86332-234-6, 344 - 347. BibTeX |
| 360. | T. Grasser, R. Strasser, M. Knaipp, K. Tsuneno, H. Masuda, S. Selberherr: "Calibration of a Mobility Model for Quartermicron CMOS Devices"; Poster: European Simulation Multiconference (ESM), Manchester; 16.06.1998 - 19.06.1998; in "Proceedings European Simulation Multiconference", (1998), ISBN: 1-56555-148-6, 75 - 77. BibTeX |
| 359. | T. Grasser, R. Strasser, M. Knaipp, K. Tsuneno, H. Masuda, S. Selberherr: "Device Simulator Calibration for Quartermicron CMOS Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 93 - 96 doi:10.1007/978-3-7091-6827-1_26. BibTeX |
| 358. | W. Pyka, R. Martins, S. Selberherr: "Efficient Algorithms for Three-Dimensional Etching and Deposition Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 16 - 19 doi:10.1007/978-3-7091-6827-1_5. BibTeX |
| 357. | T. Grasser, V. Palankovski, G. Schrom, S. Selberherr: "Hydrodynamic Mixed-Mode Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 247 - 250 doi:10.1007/978-3-7091-6827-1_62. BibTeX |
| 356. | V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr: "Implications of Dopant-Dependent Low-Field Mobility and Band Gap Narrowing on the Bipolar Device Performance"; Talk: L. Brogiato, D.V. Camin, G. Pessina (ed); European Workshop on Low Temperature Electronics (WOLTE), San Miniato; 24.06.1998 - 26.06.1998; in "Proceedings European Workshop on Low Temperature Electronics 3", (1998), 8, 91 - 94 doi:10.1051/jp4:1998321. BibTeX |
| 355. | V. Palankovski, M. Knaipp, S. Selberherr: "Influence of the Material Composition and Doping Profiles on HBTs Device Performance"; Talk: International Conference on Modelling and Simulation, Pittsburgh; 13.05.1998 - 16.05.1998; in "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1998), ISBN: 0-88986-252-4, 7 - 10. BibTeX |
| 354. | T. Grasser, S. Selberherr, K. Tsueno, H. Masuda: "Mobility Parameter Tuning for Device Simulation"; Talk: European Solid-State Device Research Conference (ESSDERC), Bordeaux; 07.09.1998 - 09.09.1998; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1998), ISBN: 2-86332-234-6, 336 - 339. BibTeX |
| 353. | R. Martins, W. Pyka, R. Sabelka, S. Selberherr: "Modeling Integrated Circuit Interconnections"; Talk: International Conference on Microelectronics and Packaging, Curitiba; 10.08.1998 - 14.08.1998; in "Proceedings XIII SBMicro, Intl. Conf. on Microelectronics and Packaging", (1998), 144 - 151. BibTeX |
| 352. | R. Mlekus, S. Selberherr: "Object-Oriented Algorithm and Model Management"; Talk: International Conference on Applied Modelling and Simulation, Honolulu; 12.08.1998 - 14.08.1998; in "Proceedings IASTED Intl. Conf. on Applied Modelling and Simulation", (1998), ISBN: 0-88986-270-2, 437 - 441. BibTeX |
| 351. | P. Fleischmann, E. Leitner, S. Selberherr: "Optimized Geometry Preprocessing for Three-Dimensional Semiconductor Process Simulation"; Talk: International Conference on Applied Modelling and Simulation, Honolulu; 12.08.1998 - 14.08.1998; in "Proceedings IASTED Intl. Conf. on Applied Modelling and Simulation", (1998), ISBN: 0-88986-270-2, 317 - 321. BibTeX |
| 350. | R. Strasser, R. Plasun, S. Selberherr: "Parallel and Distributed Optimization in Technology Computer Aided Design"; Poster: European Simulation Multiconference (ESM), Manchester; 16.06.1998 - 19.06.1998; in "Proceedings European Simulation Multiconference", (1998), ISBN: 1-56555-148-6, 78 - 80. BibTeX |
| 349. | R. Strasser, S. Selberherr: "Parallel and Distributed TCAD Simulations Using Dynamic Load Balancing"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 89 - 92 doi:10.1007/978-3-7091-6827-1_25. BibTeX |
| 348. | R. Martins, R. Sabelka, W. Pyka, S. Selberherr: "Rigorous Capacitance Simulation of DRAM Cells"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 69 - 72 doi:10.1007/978-3-7091-6827-1_20. BibTeX |
| 347. | R. Quay, R. Reuter, V. Palankovski, S. Selberherr: "S-Parameter Simulation of RF-HEMTs"; Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester; 24.11.1998 in "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO 98", (1998), ISBN: 0-7803-4333-6, 13 - 18. BibTeX |
| 346. | R. Sabelka, S. Selberherr: "SAP - A Program Package for Three-Dimensional Interconnect Simulation"; Poster: IEEE International Interconnect Technology Conference (IITC), San Francisco; 01.06.1998 - 03.06.1998; in "Proceedings Intl. Interconnect Technology Conf.", (1998), ISBN: 0-7803-4286-0, 250 - 252. BibTeX |
| 345. | V. Palankovski, T. Grasser, S. Selberherr: "SiGe HBT in Mixed-Mode Device and Circuit Simulation"; Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Zeuthen; 24.05.1998 - 27.05.1998; in "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (1998), 145 - 156. BibTeX |
| 344. | R. Plasun, M. Stockinger, R. Strasser, S. Selberherr: "Simulation Based Optimization Environment and it's Application to Semiconductor Devices"; Talk: International Conference on Applied Modelling and Simulation, Honolulu; 12.08.1998 - 14.08.1998; in "Proceedings IASTED Intl. Conf. on Applied Modelling and Simulation", (1998), ISBN: 0-88986-270-2, 313 - 316. BibTeX |
| 343. | M. Rottinger, N. Seifert, S. Selberherr: "Simulation of AVC Measurements"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 284 - 287 doi:10.1007/978-3-7091-6827-1_72. BibTeX |
| 342. | C. Wasshuber, H. Kosina, S. Selberherr: "Single-Electron Memories with Terabit Capacity"; Poster: Advanced Research Workshop on Future Trends in Microelectronics, Ile des Embiez; (invited) 31.05.1998 - 05.06.1998; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Off the Beaten Path", (1998), P-Th-17. BibTeX |
| 341. | V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr: "Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices"; Poster: International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technology, Cardiff; 21.06.1998 - 24.06.1998; in "Abstracts Intl. Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technology", (1998), 15. BibTeX |
| 340. | M. Radi, S. Selberherr: "Three-Dimensional Adaptive Mesh Relaxation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 193 - 196 doi:10.1007/978-3-7091-6827-1_49. BibTeX |
| 339. | W. Pyka, S. Selberherr: "Three-Dimensional Simulation of Bulge Formation in Contact Hole Metalization"; Poster: International Conference on Modeling and Simulation of Microsystems (MSM), Santa Clara; 06.05.1998 - 08.05.1998; in "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1998), ISBN: 0-9666135-0-3, T4.3.3.. BibTeX |
| 338. | W. Pyka, S. Selberherr: "Three-Dimensional Simulation of TiN Magnetron Sputter Deposition"; Talk: European Solid-State Device Research Conference (ESSDERC), Bordeaux; 07.09.1998 - 09.09.1998; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1998), ISBN: 2-86332-234-6, 324 - 327. BibTeX |
| 337. | K. Dragosits, M. Knaipp, S. Selberherr: "Two-Dimensional Simulation of Ferroelectric Memory Cells"; Talk: International Conference on Electronic Materials, Cheju; 24.08.1998 - 27.08.1998; in "Abstracts Intl. Conf. on Electronic Materials", (1998), 40. BibTeX |
| 336. | K. Dragosits, M. Knaipp, S. Selberherr: "Two-Dimensional Simulation of Ferroelectric Nonvolatile Memory Cells"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 368 - 371 doi:10.1007/978-3-7091-6827-1_91. BibTeX |
| 335. | C. Troger, H. Kosina, S. Selberherr: "A Consistent Inclusion of Nonparabolicity in a Schrödinger-Poisson Solver for Silicon Inversion Layers"; Talk: International Conference on Computational Physics, Singapore; 02.06.1997 - 04.06.1997; in "Abstracts Intl. Conf. on Computational Physics", (1997), 26 - 27. BibTeX |
| 334. | T. Simlinger, M. Rottinger, S. Selberherr: "A Method for Unified Treatment of Interface Conditions Suitable for Device Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 08.09.1997 - 10.09.1997; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1, 173 - 176 doi:10.1109/SISPAD.1997.621365. BibTeX |
| 333. | H. Kosina, G. Kaiblinger-Grujin, S. Selberherr: "A New Approach to Ionized-Impurity Scattering"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 08.09.1997 - 10.09.1997; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1, 205 - 208 doi:10.1109/SISPAD.1997.621373. BibTeX |
| 332. | M. Radi, E. Leitner, E. Hollensteiner, S. Selberherr: "A Novel Diffusion Coupled Oxidation Model"; Talk: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 22.09.1997 - 24.09.1997; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4, 472 - 475. BibTeX |
| 331. | M. Knaipp, S. Selberherr: "A Physically Based Substrate Current Simulation"; Talk: International Conference on VLSI and CAD (ICVC), Seoul; 13.10.1997 - 15.10.1997; in "Proceedings Intl. Conf. On VLSI and CAD", (1997), 558 - 560. BibTeX |
| 330. | M. Knaipp, T. Grasser, S. Selberherr: "A Physically Based Substrate Current Simulation"; Poster: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 22.09.1997 - 24.09.1997; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4, 196 - 199. BibTeX |
| 329. | M. Radi, E. Leitner, E. Hollensteiner, S. Selberherr: "AMIGOS: Analytical Model Interface & General Object-Oriented Solver"; Talk: Grundlagen und Technologie elektronischer Bauelemente, Großarl; 19.03.1997 - 22.03.1997; in "Proceedings Seminar Basics and Technology of Electronic Devices", (1997), ISBN: 3-901578-02-1, 57 - 60. BibTeX |
| 328. | M. Radi, E. Leitner, E. Hollensteiner, S. Selberherr: "AMIGOS: Analytical Model Interface & General Object-Oriented Solver"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 08.09.1997 - 10.09.1997; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1, 331 - 334 doi:10.1109/SISPAD.1997.621405. BibTeX |
| 327. | R. Mlekus, S. Selberherr: "An Object-Oriented Approach to the Management of Models"; Talk: Grundlagen und Technologie elektronischer Bauelemente, Großarl; 19.03.1997 - 22.03.1997; in "Proceedings Seminar Basics and Technology of Electronic Devices", (1997), ISBN: 3-901578-02-1, 53 - 56. BibTeX |
| 326. | M. Radi, E. Leitner, E. Hollensteiner, S. Selberherr: "Analytical Partial Differential Equation Modeling Using AMIGOS"; Talk: International Conference on Artificial Intelligence and Soft Computing, Banff; 27.07.1997 - 01.08.1997; in "Proceedings IASTED Intl. Conf. on Artificial Intelligence and Soft Computing", (1997), ISBN: 0-88986-229-x, 423 - 426. BibTeX |
| 325. | C. Köpf, H. Kosina, S. Selberherr: "Anisotropic Electron Transport in Lattice-Mismatch-Strained GaInAs Alloys"; Poster: Condensed Matter Physics Meeting, Pakota Island; 04.02.1997 - 07.02.1997; in "Abstracts 21. Condensed Matter Physics Meeting", (1997), TP21. BibTeX |
| 324. | G. Kaiblinger-Grujin, H. Kosina, S. Selberherr: "Dependence of Electron Mobility on Dopants in Heavily Doped Semiconductors"; Talk: Condensed Matter Physics Meeting, Pakota Island; 04.02.1997 - 07.02.1997; in "Abstracts 21. Condensed Matter Physics Meeting", (1997), TA02. BibTeX |
| 323. | G. Kaiblinger-Grujin, C. Köpf, H. Kosina, S. Selberherr: "Dependence of Electron Mobility on Impurities in Compound Semiconductors"; Talk: III-V Semiconductor Device Simulation Workshop, Turin; 16.10.1997 - 17.10.1997; . BibTeX |
| 322. | E. Langer: "Device Simulation as a Customer of Technology Process Simulation"; Poster: International Workshop on Challenges in Predictive Process Simulation (ChiPPS), Wandlitz; (invited) 17.08.1997 - 20.08.1997; in "Proceedings ChiPPS 97 Conf.", (1997), 1. BibTeX |
| 321. | G. Kaiblinger-Grujin, H. Kosina, S. Selberherr: "Electron Mobility in Doped Semiconductors"; Talk: International Conference on Computational Physics, Singapore; 02.06.1997 - 04.06.1997; in "Abstracts Intl. Conf. on Computational Physics", (1997), 30 - 31. BibTeX |
| 320. | H. Brech, T. Grave, A. Werthof, H. Siveris, T. Simlinger, S. Selberherr: "Influence of Backside Doping on the Nonlinear Capacitances of a PHEMT Affecting the VCO Frequency Characteristics"; Talk: International Symposium on Compound Semiconductors (ISCS), San Diego; 08.09.1997 - 11.09.1997; in "Abstracts Intl. Symposium on Compound Semiconductors", (1997), ThA6. BibTeX |
| 319. | G. Kaiblinger-Grujin, H. Kosina, C. Köpf, S. Selberherr: "Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors"; Talk: International Conference on Defects in Semiconductors, Aveiro; 21.07.1997 - 25.07.1997; in "Proceedings Intl. Conf. on Defects in Semiconductors", (1997), Proceedings Part 2, Section 11, 939 - 944. BibTeX |
| 318. | C. Köpf, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr: "Influence of Dopant Species on Electron Mobility in InP"; Talk: International Conference on Indium Phosphide an Related Materials, Hyannis; 11.05.1997 - 15.05.1997; in "Proceedings Intl. Conf. on Indium Phosphide and Related Materials", (1997), 280 - 283. BibTeX |
| 317. | H. Brech, T. Simlinger, T. Grave, S. Selberherr: "Influence of Gatelength on the DC-Characteristics and ft of Pseudomorphic Power-HEMTs"; Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Scheveningen; 25.05.1997 - 28.05.1997; in "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (1997), 1 - 2. BibTeX |
| 316. | H. Brech, T. Grave, T. Simlinger, S. Selberherr: "Influence of T-Gate Shape and Footprint Length on PHEMT High Frequency Performance"; Talk: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Anaheim; 12.10.1997 - 15.10.1997; in "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (1997), ISBN: 0-7803-4083-3, 66 - 69 doi:10.1109/GAAS.1997.628239. BibTeX |
| 315. | M. Knaipp, S. Selberherr: "Investigation on Hydrodynamic Impact Ionization (II) in n-MOSFETs"; Talk: International Conference on Computational Physics, Singapore; 02.06.1997 - 04.06.1997; in "Abstracts Intl. Conf. on Computational Physics", (1997), 37 - 38. BibTeX |
| 314. | C. Troger, H. Kosina, S. Selberherr: "Modeling Nonparabolicity Effects in Silicon Inversion Layers"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 08.09.1997 - 10.09.1997; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1, 323 - 326 doi:10.1109/SISPAD.1997.621403. BibTeX |
| 313. | G. Kaiblinger-Grujin, H. Kosina, S. Selberherr: "Monte Carlo Simulation of Electron Transport in Doped Silicon"; Talk: High Performance Computing Asia Conference, Seoul; 28.04.1997 - 02.05.1997; in "Proceedings High Performance Computing Asia 1997 Conf.", (1997), 444 - 449. BibTeX |
| 312. | R. Mlekus, S. Selberherr: "Object-Oriented Management of Algorithms and Models"; Talk: European Simulation Symposium (ESS), Passau; 19.10.1997 - 22.10.1997; in "Proceedings European Simulation Symposium", (1997), ISBN: 1-56555-125-7, 601 - 605. BibTeX |
| 311. | R. Plasun, C. Pichler, T. Simlinger, S. Selberherr: "Optimization Tasks in Technology CAD"; Talk: European Simulation Symposium (ESS), Passau; 19.10.1997 - 22.10.1997; in "Proceedings European Simulation Symposium", (1997), ISBN: 1-56555-125-7, 445 - 449. BibTeX |
| 310. | C. Köpf, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr: "Reexamination of Electron Mobility Dependence on Dopants in GaAs"; Talk: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 22.09.1997 - 24.09.1997; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4, 304 - 307. BibTeX |
| 309. | H. Kosina, C. Troger: "SPIN - A Schrödinger Poisson Solver Including Nonparabolic Bands"; Talk: International Workshop on Computational Electronics (IWCE), Notre Dame, IN, USA; 28.05.1997 - 30.05.1997; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1997), P51. BibTeX |
| 308. | R. Sabelka, K. Koyama, S. Selberherr: "STAP - A Finite Element Simulator for Three-Dimensional Thermal Analysis of Interconnect Structures"; Talk: European Simulation Symposium (ESS), Passau; 19.10.1997 - 22.10.1997; in "Proceedings European Simulation Symposium", (1997), ISBN: 1-56555-125-7, 621 - 625. BibTeX |
| 307. | C. Wasshuber, H. Kosina, S. Selberherr: "Single-Electron Memories"; Talk: International Workshop on Computational Electronics (IWCE), Notre Dame, IN, USA; 28.05.1997 - 30.05.1997; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1997), FrP1. BibTeX |
| 306. | R. Plasun, C. Pichler, T. Simlinger, S. Selberherr: "Technology CAD for Smart Power Devices"; Talk: V. Kumar, S. Agarwal (ed); International Workshop on Processes of Semiconductor Devices, Delhi; 16.12.1997 - 20.12.1997; in "Physics of Semiconductor Devices", (1997), 481 - 488. BibTeX |
| 305. | T. Simlinger, C. Pichler, R. Plasun, S. Selberherr: "Technology CAD for Smart Power Devices"; Talk: International Semiconductor Conference (CAS), Sinaia; (invited) 07.10.1997 - 11.10.1997; in "Proceedings CAS 97 Conf.", (1997), ISBN: 0-7803-3804-9, 383 - 393. BibTeX |
| 304. | H. Kosina, S. Selberherr: "Technology CAD: Process and Device Simulation"; Talk: International Conference on Microelectronics (MIEL), Nis; (invited) 14.09.1997 - 17.09.1997; in "Proceedings of the International Conference on Microelectronics (MIEL)", (1997), ISBN: 0-7803-3664-x, 441 - 450 doi:10.1109/ICMEL.1997.632866. BibTeX |
| 303. | S. Selberherr: "The State of the Art in Technology Computer-Aided Design"; Talk: Sematech Meeting on Microelectronics, Boston; (invited) 10.09.1997. BibTeX |
| 302. | S. Selberherr: "The State of the Art in Technology Computer-Aided Design"; Talk: Ultra Low Voltage Low Power Research Symposium, Portland; (invited) 05.09.1997 in "Abstracts Ultra Low Voltage Low Power Research Symposium", (1997), 1. BibTeX |
| 301. | S. Selberherr: "The State of the Art in Technology Computer-Aided Design"; Talk: Primer Taller de Technicas de Simulacion en Semiconductores, Mexico City; (invited) 02.06.1997 - 03.06.1997; in "Abstracts Primer Taller de Technicas de Simulacion en Semiconductores", (1997), 1. BibTeX |
| 300. | P. Fleischmann, S. Selberherr: "Three-Dimensional Delaunay Mesh Generation Using a Modified Advancing Front Approach"; Talk: International Meshing Roundtable, Park City; 13.10.1997 - 15.10.1997; in "Proceedings 6th International Meshing Roundtable", (1997), 267 - 278. BibTeX |
| 299. | A. Stach, R. Sabelka, S. Selberherr: "Three-Dimensional Layout-Based Thermal and Capacitive Simulation of Interconnect Structures"; Talk: International Conference on Modelling, Identification and Control, Innsbruck; 17.02.1997 - 19.02.1997; in "Proceedings IASTED Intl. Conf. on Modelling, Identification and Control", (1997), ISBN: 0-88986-217-6, 16 - 19. BibTeX |
| 298. | H. Kirchauer, S. Selberherr: "Three-Dimensional Photolithography Simulation"; Talk: Grundlagen und Technologie elektronischer Bauelemente, Großarl; 19.03.1997 - 22.03.1997; in "Proceedings Seminar Basics and Technology of Electronic Devices", (1997), ISBN: 3-901578-02-1, 27 - 31. BibTeX |
| 297. | V. Palankovski, M. Rottinger, T. Simlinger, S. Selberherr: "Two-Dimensional Simulation and Comparison of Si-based and GaAs-based HBTs"; Talk: III-V Semiconductor Device Simulation Workshop, Turin; 16.10.1997 - 17.10.1997; . BibTeX |
| 296. | R. Strasser, C. Pichler, S. Selberherr: "VISTA - A Framework for Technology CAD Purposes"; Talk: European Simulation Symposium (ESS), Passau; 19.10.1997 - 22.10.1997; in "Proceedings European Simulation Symposium", (1997), ISBN: 1-56555-125-7, 450 - 454. BibTeX |
| 295. | G. Schrom, De Vivek, S. Selberherr: "VLSI Performance Metric Based on Minimum TCAD Simulations"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 08.09.1997 - 10.09.1997; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1, 25 - 28 doi:10.1109/SISPAD.1997.621327. BibTeX |
| 294. | W. Tuppa, S. Selberherr: "A CASE-Oriented Configuration Management Agent"; Talk: International Conference on Artificial Intelligence, Expert Systems and Neural Networks, Honolulu; 19.08.1996 - 21.08.1996; in "Proceedings IASTED Intl. Conf. on Artificial Intelligence, Expert Systems and Neural Networks", (1996), ISBN: 0-88986-211-7, 368 - 371. BibTeX |
| 293. | W. Tuppa, S. Selberherr: "A CASE-Oriented Configuration Management Utility"; Talk: International Conference on Modelling and Simulation, Pittsburgh; 25.04.1996 - 27.04.1996; in "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1996), ISBN: 0-88986-201-x, 83 - 87. BibTeX |
| 292. | G. Schrom, A. Stach, S. Selberherr: "A Charge Based MOSFET Model for Low-Voltage Mixed-Signal Applications"; Talk: European Solid-State Device Research Conference (ESSDERC), Bologna; 09.09.1996 - 11.09.1996; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x, 495 - 498. BibTeX |
| 291. | W. Tuppa, S. Selberherr: "A Configuration Management Utility with CASE-Orientation"; Talk: International Conference on Modelling, Simulation and Optimization, Gold Coast; 06.05.1996 - 09.05.1996; in "Proceedings IASTED Intl. Conf. on Modelling, Simulation and Optimization", (1996), ISBN: 0-88986-197-8, 242 - 273. BibTeX |
| 290. | G. Schrom, A. Stach, S. Selberherr: "A Consistent Dynamic MOSFET Model for Low-Voltage Applications"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4, 177 - 178 doi:10.1109/SISPAD.1996.865327. BibTeX |
| 289. | C. Wasshuber, H. Kosina: "A Multipurpose Single Electron Device and Circuit Simulator"; Talk: Silicon Nanoelectronics Workshop, Honolulu; 09.06.1996 - 10.06.1996; in "Abstracts Silicon Nanoelectronics Workshop", (1996), 37. BibTeX |
| 288. | P. Fleischmann, S. Selberherr: "A New Approach to Fully Unstructured Three-Dimensional Delaunay Mesh Generation with Improved Element Quality"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4, 129 - 130 doi:10.1109/SISPAD.1996.865308. BibTeX |
| 287. | C. Wasshuber, H. Kosina: "A Single Electron Device and Circuit Simulator"; Talk: Nanostructures and Mesoscopic Systems, Santa Fe; 19.05.1996 - 24.05.1996; in "Proceedings Nanostructures and Mesoscopic Systems", (1996), 43. BibTeX |
| 286. | C. Wasshuber, H. Kosina: "A Single Electron Device and Circuit Simulator with a New Algorithm to Incorporate Co-Tunneling"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4, 135 - 136 doi:10.1109/SISPAD.1996.865311. BibTeX |
| 285. | H. Puchner, P. Neary, S. Aronowitz, S. Selberherr: "A Transient Activation Model for Phosphorus after Sub-Amorphizing Channeling Implants"; Talk: European Solid-State Device Research Conference (ESSDERC), Bologna; 09.09.1996 - 11.09.1996; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x, 157 - 160. BibTeX |
| 284. | M. Knaipp, T. Simlinger, W. Kanert, S. Selberherr: "Analysis of Leakage Currents in Smart Power Devices"; Talk: European Solid-State Device Research Conference (ESSDERC), Bologna; 09.09.1996 - 11.09.1996; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x, 645 - 648. BibTeX |
| 283. | C. Köpf, H. Kosina, S. Selberherr: "Anisotropic Mobility Model for GaInAs Covering Full Composition and Strain Range in the GaAs-InAs System"; Talk: International Symposium on Compound Semiconductors (ISCS), St. Petersburg; 23.09.1996 - 27.09.1996; in "Abstracts International Symposium on Compound Semiconductors (ISCS)", (1996), 30. BibTeX |
| 282. | C. Köpf, H. Kosina, S. Selberherr: "Anisotropic Mobility Model for GaInAs Covering Full Composition and Strain Range in the GaAs-InAs System"; Talk: International Symposium on Compound Semiconductors (ISCS), St. Petersburg; 23.09.1996 - 27.09.1996; in "Proceedings Intl. Symposium on Compound Semiconductors", (1996), 675 - 678. BibTeX |
| 281. | H. Brech, T. Simlinger, T. Grave, S. Selberherr: "Current Transport in Double Heterojunction HEMTs"; Talk: European Solid-State Device Research Conference (ESSDERC), Bologna; 09.09.1996 - 11.09.1996; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x, 873 - 876. BibTeX |
| 280. | P. Fleischmann, R. Sabelka, A. Stach, R. Strasser, S. Selberherr: "Grid Generation for Three-Dimensional Process and Device Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; (invited) 02.09.1996 - 04.09.1996; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4, 161 - 166 doi:10.1109/SISPAD.1996.865321. BibTeX |
| 279. | R. Martins, S. Selberherr: "Layout Data in TCAD Frameworks"; Talk: European Simulation Multiconference (ESM), Budapest; 02.06.1996 - 06.06.1996; in "Proceedings European Simulation Multiconference", (1996), ISBN: 1-56555-097-8, 1122 - 1126. BibTeX |
| 278. | W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr: "Monte Carlo Simulation of Silicon Amorphization During Ion Implantation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4, 17 - 18 doi:10.1109/SISPAD.1996.865252. BibTeX |
| 277. | S. Selberherr: "Prozeßsimulation: Stand der Technik"; Talk: Verhandlungen der DPG, Frühjahrstagung Festkörperphysik, Regensburg; (invited) 25.03.1996 - 29.03.1996; in "Verhandlungen der DPG", (1996), 1360. BibTeX |
| 276. | H. Kirchauer, S. Selberherr: "Rigorous Three-Dimensional Photolithography Simulation Over Nonplanar Structures"; Talk: European Solid-State Device Research Conference (ESSDERC), Bologna; 09.09.1996 - 11.09.1996; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x, 347 - 350. BibTeX |
| 275. | C. Pichler, R. Plasun, R. Strasser, S. Selberherr: "Simulation Environment for Semiconductor Technology Analysis"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4, 147 - 148 doi:10.1109/SISPAD.1996.865314. BibTeX |
| 274. | E. Langer: "Simulation technologischer Prozesse"; Talk: ÖPG-Jahrestagung, Johannes Kepler Universität Linz; (invited) 23.09.1996 - 27.09.1996; in "Tagungsband ÖPG-Tagung 1996", (1996), 130. BibTeX |
| 273. | S. Selberherr: "The MINIMOS Simulator and TUV Perspective on TCAD"; Talk: Computer-Aided Design of IC Processes and Devices, Stanford; (invited) 07.08.1996 - 08.08.1996; in "Symposium on Computer-Aided Design of IC Processes and Devices", (1996), 1 - 14. BibTeX |
| 272. | H. Kirchauer, S. Selberherr: "Three-Dimensional Photoresist Exposure and Development Simulation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4, 99 - 100 doi:10.1109/SISPAD.1996.865291. BibTeX |
| 271. | E. Langer, S. Selberherr: "Three-Dimensional Process Simulation for Advanced Silicon Semiconductor Devices"; Talk: International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), Smolenice; (invited) 20.10.1996 - 24.10.1996; in "Proceedings ASDAM 96 Conf.", (1996), 169 - 177. BibTeX |
| 270. | H. Kirchauer, S. Selberherr: "Three-Dimensional Simulation of Light-Scattering over Nonplanar Substrates in Photolithography"; Poster: Electron, Ion and Photon Beam Technology and Nanofabrication Conference, Atlanta; 28.05.1996 - 31.05.1996; in "Abstracts Electron, Ion and Photon Beam Technology and Nanofabrication Conference", (1996), 155 - 156. BibTeX |
| 269. | H. Brech, T. Simlinger, T. Grave, S. Selberherr: "Two-Dimensional Simulation of a Pseudomorphic HEMT with MINIMOS-NT"; Talk: III-V Semiconductor Device Simulation Workshop, Eindhoven; 09.05.1996 - 10.05.1996; in "Proceedings Ninth III-V Semiconductor Device Simulation Workshop", (1996), 1 - 3. BibTeX |
| 268. | G. Schrom, S. Selberherr: "Ultra-Low-Power CMOS Technologies"; Talk: International Semiconductor Conference (CAS), Sinaia; (invited) 09.10.1996 - 12.10.1996; in "Proceedings CAS 96 Conf.", (1996), ISBN: 0-7803-3233-4, 237 - 246. BibTeX |
| 267. | E. Leitner, W. Bohmayr, P. Fleischmann, E. Strasser, S. Selberherr: "3D TCAD at TU Vienna"; Talk: 3-Dimensional Process Simulation Workshop, Erlangen; (invited) 05.09.1995 in "Proceedings 3-Dimensional Process Simulation Workshop", (1995), ISBN: 3-211-82741-2, 136 - 161 doi:10.1007/978-3-7091-6905-6_7. BibTeX |
| 266. | N. Khalil, G. Nanz, R. Rios, S. Selberherr: "A B-Splines Regression Technique to Determine One-Dimensional MOS Doping Profiles"; Talk: European Solid-State Device Research Conference (ESSDERC), Den Haag; 25.09.1995 - 27.09.1995; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1995), ISBN: 2-86332-182-x, 191 - 194. BibTeX |
| 265. | G. Rieger, S. Halama, S. Selberherr: "A Graphical Editor for TCAD Purposes"; Poster: Conference on Geometric Design, Nashville; 30.12.1995 in "Abstracts SIAM Conf. On Geometric Design", (1995), A17. BibTeX |
| 264. | M. Harrer, H. Kosina: "A Hot-Hole Transport Model Based on Spherical Harmonics Expansion of the Anisotropic Bandstructure"; Poster: International Workshop on Computational Electronics (IWCE), Tempe, AZ, USA; 30.10.1995 - 02.11.1995; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1995), 24. BibTeX |
| 263. | H. Kosina, M. Harrer, P. Vogl, S. Selberherr: "A Monte Carlo Transport Model Based on Spherical Harmonics Expansion of the Valence Bands"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6, 396 - 399 doi:10.1007/978-3-7091-6619-2_96. BibTeX |
| 262. | G. Rieger, S. Halama, S. Selberherr: "A Programmable Tool for Interactive Wafer-State Level Data Processing"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6, 58 - 61 doi:10.1007/978-3-7091-6619-2_13. BibTeX |
| 261. | H. Puchner, S. Selberherr: "A Two-Dimensional Dopant Diffusion Model for Polysilicon"; Talk: Meeting on Impurity Diffusion and Defects in Silicon and Related Materials, Athen; 03.05.1995 - 04.05.1995; in "Abstracts Meeting on Impurity Diffusion and Defects in Silicon and Related Materials", (1995), 16 - 17. BibTeX |
| 260. | E. Leitner, S. Selberherr: "Adaptive Tessellation for the Three-Dimensional Simulation of Doping Profiles"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 24.09.1995 - 28.09.1995; in "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), 610 - 612. BibTeX |
| 259. | G. Kaiblinger-Grujin, H. Kosina: "An Improved Ionized Impurity Scattering Model for Monte Carlo Calculations"; Poster: International Workshop on Computational Electronics (IWCE), Tempe, AZ, USA; 30.10.1995 - 02.11.1995; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1995), 25. BibTeX |
| 258. | A. Burenkov, W. Bohmayr, J. Lorenz, H. Ryssel, S. Selberherr: "Analytical Model for Phosphorus Large Angle Tilted Implantation"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6, 488 - 491 doi:10.1007/978-3-7091-6619-2_118. BibTeX |
| 257. | W. Bohmayr, S. Selberherr: "Effiziente Methoden für die Monte Carlo Simulation der Ionenimplantation in multidimensionale kristalline Halbleiterstrukturen"; Talk: Seminar Grundlagen und Technologie elektronischer Bauelemente, Grossarl; 05.04.1995 - 08.04.1995; in "Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente", (1995), ISBN: 3-901578-01-3, 63 - 66. BibTeX |
| 256. | W. Bohmayr, S. Selberherr: "Investigation of Channeling in Field Oxide Corners by Three-Dimensional Monte Carlo Simulation of Ion Implantation"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 24.09.1995 - 28.09.1995; in "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), 304 - 306. BibTeX |
| 255. | T. Simlinger, H. Kosina, M. Rottinger, S. Selberherr: "MINIMOS-NT: A Generic Simulator for Complex Semiconductor Devices"; Talk: European Solid-State Device Research Conference (ESSDERC), Den Haag; 25.09.1995 - 27.09.1995; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1995), ISBN: 2-86332-182-x, 83 - 86. BibTeX |
| 254. | C. Köpf, H. Kosina, S. Selberherr: "Mobility Model for III-V Compounds Suited for Hydrodynamic Device Simulation"; Talk: International Symposium on Compound Semiconductors (ISCS), Cheju Island; 28.08.1995 - 02.09.1995; in "Abstracts Intl.Symposium on Compound Semiconductors", (1995), 108. BibTeX |
| 253. | C. Köpf, H. Kosina, S. Selberherr: "Mobility Model for III-V Compounds Suited for Hydrodynamic Device Simulation"; Talk: International Symposium on Compound Semiconductors (ISCS), Cheju Island; 28.08.1995 - 02.09.1995; in "Proceedings Intl.Symposium on Compound Semiconductors", (1995), 1255 - 1260. BibTeX |
| 252. | H. Kosina, T. Simlinger: "Modeling Concepts for Modern Semiconductor Devices"; Talk: International Semiconductor Conference (CAS), Sinaia; (invited) 11.10.1995 - 14.10.1995; in "Proceedings CAS 95 Intl. Semiconductor Conference", (1995), ISBN: 0-7803-2647-4, 27 - 36. BibTeX |
| 251. | R. Mlekus, C. Ledl, E. Strasser, S. Selberherr: "Polygonal Geometry Reconstruction after Cellular Etching or Deposition Simulation"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6, 50 - 53 doi:10.1007/978-3-7091-6619-2_11. BibTeX |
| 250. | H. Puchner, S. Selberherr: "Simulation of Ion Implantation Using the Four-Parameter Kappa Distribution Function"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 24.09.1995 - 28.09.1995; in "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), 295 - 297. BibTeX |
| 249. | C. Wasshuber, H. Kosina: "Simulation of a Single Electron Tunnel Transistor with Inclusion of Inelastic Macroscopic Quantum Tunneling of Charge"; Poster: International Workshop on Computational Electronics (IWCE), Tempe, AZ, USA; 30.10.1995 - 02.11.1995; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1995), 4. BibTeX |
| 248. | E. Leitner, S. Selberherr: "Simulation von thermischen Diffusionsprozessen in dreidimensionalen Halbleiterstrukturen"; Talk: Seminar Grundlagen und Technologie elektronischer Bauelemente, Grossarl; 05.04.1995 - 08.04.1995; in "Seminar Grundlagen und Technologie elektronischer Bauelemente", (1995), ISBN: 3-901578-01-3, 67 - 70. BibTeX |
| 247. | W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr: "Statistical Accuracy and CPU Time Characteristic of Three Trajectory Split Methods for Monte Carlo Simulation of Ion Implantation"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6, 492 - 495 doi:10.1007/978-3-7091-6619-2_119. BibTeX |
| 246. | C. Pichler, N. Khalil, G. Schrom, S. Selberherr: "TCAD Optimization Based on Task-Level Framework Services"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6, 70 - 73 doi:10.1007/978-3-7091-6619-2_16. BibTeX |
| 245. | P. Habas: "The Application of Charge-Pumping Technique to Characterize the Si/Si02 Interface in Power VDMOSFETs"; Talk: International Conference on Insulating Films on Semiconductors (INFOS), Villard-de-Lans; 07.06.1995 - 10.06.1995; . BibTeX |
| 244. | S. Selberherr, C. Fischer, S. Halama, C. Pichler, G. Rieger, G. Schrom, T. Simlinger: "The IC Processes of the Future: Advances in Device Structures and Device Simulation Techniques"; Talk: Eschola da Sociedade Brasileira de Microeletronica (EBMICRO), Recife; (invited) 15.01.1995 - 20.01.1995; in "Proceedings IV EBMICRO", (1995), Vol. 1, 87 - 114. BibTeX |
| 243. | G. Rieger, S. Selberherr: "The PIF Editor - a Data Processor for the VISTA TCAD Framework"; Talk: High Performance Computing Asia Conference, Taipei; 18.09.1995 - 22.09.1995; in "Proceedings High Performance Computing Asia 1995 Conference", (1995), 11 page(s) . BibTeX |
| 242. | M. Mukai, T. Tatsumi, N. Nakauchi, T. Kobayashi, K. Koyama, Y. Komatsu, R. Bauer, G. Rieger, S. Selberherr: "The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6, 151 - 154 doi:10.1007/978-3-7091-6619-2_35. BibTeX |
| 241. | E. Leitner, S. Selberherr: "Three-Dimensional Grid Adaptation Using a Mixed-Element Decomposition Method"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6, 464 - 467 doi:10.1007/978-3-7091-6619-2_112. BibTeX |
| 240. | W. Bohmayr, S. Selberherr: "Trajectory Split Method for Monte Carlo Simulation of Ion Implantation Demonstrated by Three-Dimensional Poly-Buffered LOCOS Field Oxide Corners"; Talk: VLSI Technology, Systems and Applications Symposium (VLSITSA), Taipei; 31.05.1995 - 02.06.1995; in "Proceedings VLSI Technology, Systems and Applications Symposium", (1995), ISBN: 0-7803-2773-x, 104 - 107. BibTeX |
| 239. | N. Khalil, J. Faricelli, C. Huang, S. Selberherr: "Two-Dimensional Dopant Profiling of Submicron MOSFETs Using Nonlinear Least Squares Inverse Modeling"; Talk: Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, Research Triangle Park; (invited) 20.03.1995 - 22.03.1995; in "Proceedings Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors", (1995), 6.1 - 6.9. BibTeX |
| 238. | T. Simlinger, R. Deutschmann, C. Fischer, H. Kosina, S. Selberherr: "Two-Dimensional Hydrodynamic Simulation of High Electron Mobility Transistors Using a Block Iterative Scheme in Combination with Full Newton Method"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 24.09.1995 - 28.09.1995; in "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), 589 - 591. BibTeX |
| 237. | M. Rottinger, T. Simlinger, S. Selberherr: "Two-Dimensional Transient Simulation of Charge-Coupled Devices Using MINIMOS-NT"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6, 440 - 443 doi:10.1007/978-3-7091-6619-2_106. BibTeX |
| 236. | G. Schrom, D. Liu, C. Fischer, C. Pichler, Ch. Svensson, S. Selberherr: "VLSI Performance Analysis Method for Low-Voltage Circuit Operation"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 24.09.1995 - 28.09.1995; in "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), 328 - 330. BibTeX |
| 235. | N. Khalil, J. Faricelli, D. Bell, S. Selberherr: "A Novel Method for Extracting the Two-Dimensional Doping Profile of a Sub-Half Micron MOSFET"; Talk: Symposium on VLSI Technology, Honolulu; 07.06.1994 - 09.06.1994; in "Proceedings Symposium on VLSI Technology", (1994), ISBN: 0-7803-1921-4, 131 - 132. BibTeX |
| 234. | M. Stiftinger, W. Soppa, S. Selberherr: "A Scalable Physically Based Analytical DMOS Transistor Model"; Talk: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 12.09.1994 - 15.09.1994; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1994), ISBN: 2-86332-157-9, 825 - 828. BibTeX |
| 233. | H. Puchner, S. Selberherr: "An Advanced Model for Dopant Diffusion in Polysilicon"; Talk: Conference on Emerging Issues in Mathematics and Computation from the Materials Sciences, Pittsburgh; 18.04.1994 - 20.04.1994; in "Abstracts Conference on Emerging Issues in Mathematics and Computation from the Materials Sciences", (1994), A13. BibTeX |
| 232. | G. Schrom, D. Liu, C. Pichler, Ch. Svensson, S. Selberherr: "Analysis of Ultra-Low-Power CMOS With Process and Device Simulation"; Talk: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 11.09.1994 - 15.09.1994; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1994), ISBN: 2-86332-157-9, 679 - 682. BibTeX |
| 231. | H. Puchner, S. Selberherr: "Dynamic Grain-Growth and Static Clustering Effects on Dopant Diffusion in Polysilicon"; Talk: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Honolulu; 05.06.1994 - 06.06.1994; in "Proceedings NUPAD V, Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits", (1994), ISBN: 0-7803-1867-6, 109 - 112. BibTeX |
| 230. | T. Simlinger, C. Fischer, R. Deutschmann, S. Selberherr: "MINIMOS NT - a Hydrodynamic Simulator for High Electron Mobility Transistors"; Talk: Gallium Arsenide Simulation Workshop, Duisburg; 06.10.1994 - 07.10.1994; in "Proceedings 8th GaAs Simulation Workshop", (1994), . BibTeX |
| 229. | C. Fischer, S. Selberherr: "Optimum Scaling of Non-Symmetric Jacobian Matrices for Threshold Pivoting Preconditioners"; Talk: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Honolulu; 05.06.1994 - 06.06.1994; in "Proceedings NUPAD V, Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits", (1994), ISBN: 0-7803-1867-6, 123 - 126. BibTeX |
| 228. | R. Bauer, S. Selberherr: "Preconditioned CG-Solvers and Finite Element Grids"; Talk: Colorado Conference on Iterative Methods, Breckenridge; 05.04.1994 - 09.04.1994; in "Proceedings Colorado Conference on Iterative Methods", (1994), Vol.2, 1 - 5. BibTeX |
| 227. | H. Puchner, S. Selberherr: "Simulation of Graft Base Formation and Emitter Outdiffusion in High-Performance Bipolar LSIs"; Talk: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 11.09.1994 - 15.09.1994; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1994), ISBN: 2-86332-157-9, 165 - 168. BibTeX |
| 226. | E. Langer: "Simulation of Microstructures"; Talk: International Semiconductor Conference (CAS), Sinaia; (invited) 11.10.1994 - 16.10.1994; in "Proceedings CAS'94", (1994), 47 - 56. BibTeX |
| 225. | E. Langer, S. Selberherr: "The Status of Process and Device Simulation"; Talk: International Conference on Microelectronics (MIEL), Istanbul; (invited) 05.09.1994 - 07.09.1994; in "Proceedings of the International Conference on Microelectronics (MIEL)", (1994), 256 - 260. BibTeX |
| 224. | E. Strasser, S. Selberherr: "Three-Dimensional Models and Algorithms for Wafer Topography Evaluation"; Talk: Microelectronics Conference, Zvenigorod; (invited) 28.11.1994 - 03.12.1994; in "Proceedings Microelectronics '94", (1994), 23 - 24. BibTeX |
| 223. | E. Strasser, S. Selberherr: "Three-Dimensional Simulation of Step Coverage for Contact Hole Metallization"; Talk: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 11.09.1994 - 15.09.1994; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1994), ISBN: 2-86332-157-9, 339 - 342. BibTeX |
| 222. | R. Deutschmann, C. Fischer, T. Simlinger, C. Köpf, S. Selberherr: "Two-Dimensional Hydrodynamic Simulation of Heterostructure Devices"; Talk: Gallium Arsenide Simulation Workshop, Duisburg; 06.10.1994 - 07.10.1994; in "Proceedings 8th GaAs Simulation Workshop", (1994), . BibTeX |
| 221. | E. Strasser, S. Selberherr: "A General Simulation Method for Etching and Deposition Processes"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 07.09.1993 - 09.09.1993; in "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5, 357 - 360 doi:10.1007/978-3-7091-6657-4_88. BibTeX |
| 220. | E. Strasser, K. Wimmer, S. Selberherr: "A New Method for Simulation of Etching and Deposition Processes"; Talk: VLSI Process and Device Modeling Workshop (VPAD), Nara; 14.05.1993 - 15.05.1993; in "Proceedings VPAD Workshop", (1993), ISBN: 0-7803-1338-0, 54 - 55. BibTeX |
| 219. | M. Stiftinger, W. Soppa, S. Selberherr: "A Physically Based DC- and AC-Model for Vertical Smart Power DMOS Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble; 13.09.1993 - 16.09.1993; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1993), ISBN: 2-86332-135-8, 617 - 620. BibTeX |
| 218. | G. Schrom, S. Selberherr, F. Unterleitner, J. Trontelj, V. Kunc: "Analysis of a CMOS-Compatible Vertical Bipolar Transistor"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 07.09.1993 - 09.09.1993; in "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5, 261 - 264 doi:10.1007/978-3-7091-6657-4_64. BibTeX |
| 217. | E. Strasser, S. Selberherr: "Analysis of the Fabrication Process of Multilayer Vertical Stacked Capacitors"; Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble; 13.09.1993 - 16.09.1993; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1993), ISBN: 2-86332-135-8, 587 - 590. BibTeX |
| 216. | R. Bauer, M. Stiftinger, S. Selberherr: "Capacitance Calculation of VLSI Multilevel Wiring Structures"; Poster: VLSI Process and Device Modeling Workshop (VPAD), Nara; 14.05.1993 - 15.05.1993; in "Proceedings VPAD Workshop", (1993), ISBN: 0-7803-1338-0, 142 - 143. BibTeX |
| 215. | R. Deutschmann, C. Fischer, C. Sala, S. Selberherr: "Comparison between Measured and Simulated Device Characteristics of High Electron Mobility Transistors"; Talk: Gallium Arsenide Simulation Group Meeting, Harrogate; 22.04.1993 - 23.04.1993; in "Abstracts of the 7th GaAs Simulation Group Meeting", (1993), 1 - 2. BibTeX |
| 214. | M. Hackel, H. Kosina, S. Selberherr: "Electron Transport in Silicon Dioxide at Intermediate and High Electric Fields"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 07.09.1993 - 09.09.1993; in "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5, 65 - 68 doi:10.1007/978-3-7091-6657-4_15. BibTeX |
| 213. | H. Brand, S. Selberherr: "Electrothermal Analysis of Latch-Up in an IGT"; Poster: VLSI Process and Device Modeling Workshop (VPAD), Nara; 14.05.1993 - 15.05.1993; in "Proceedings VPAD Workshop", (1993), ISBN: 0-7803-1338-0, 116 - 117. BibTeX |
| 212. | R. Deutschmann, C. Fischer, C. Sala, S. Selberherr: "Evaluation of Effective Device Parameters by Comparison of Measured and Simulated C-V Characteristics for Conventional and Pseudomorphic HEMTs"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 07.09.1993 - 09.09.1993; in "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5, 461 - 464 doi:10.1007/978-3-7091-6657-4_114. BibTeX |
| 211. | R. Deutschmann, C. Sala, C. Fischer, S. Selberherr: "Measurement and Simulation of the C-V Characteristics of High Electron Mobility Transistors"; Talk: General Conference of the Condensed Matter Division of the European Physical Society, Regensburg; 29.03.1993 - 02.04.1993; in "Abstracts of the 13th General Conference of the Condensed Matter Division European Physical Society", (1993), 17A, 1457. BibTeX |
| 210. | H. Brand, S. Selberherr: "Modeling and Simulation of Electrothermal Effects in Power Semiconductor Devices"; Talk: International Conference on Numerical Methods in Thermal Problems, Swansea; 12.07.1993 - 16.07.1993; in "Proceedings International Conference on Numerical Methods in Thermal Problems", (1993), ISBN: 0-906674-80-8, 1553 - 1564. BibTeX |
| 209. | G. Schrom, S. Selberherr, F. Unterleitner, J. Trontelj, V. Kunc: "Overvoltage Protection with a CMOS-Compatible BJT"; Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble; 13.09.1993 - 16.09.1993; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1993), ISBN: 2-86332-135-8, 899 - 902. BibTeX |
| 208. | P. Habas: "Physics and Modeling in Concerning Hot-Carrier Degradation in MOSFETs"; Talk: Conference on Microelectronics and Optoelectronics, Nis; (invited) 26.10.1993 - 28.10.1993; in "Proceedings Conference on Microelectronics and Optoelectronics", (1993), 179 - 188. BibTeX |
| 207. | O. Heinreichsberger, M. Thurner, S. Selberherr: "Practical Use of a Hierarchical Linear Solver Concept for 3D MOS Device Simulation"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 07.09.1993 - 09.09.1993; in "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5, 85 - 88 doi:10.1007/978-3-7091-6657-4_20. BibTeX |
| 206. | C. Pichler, S. Selberherr: "Process Flow Representation within the VISTA Framework"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 06.09.1993 - 09.09.1993; in "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5, 25 - 28 doi:10.1007/978-3-7091-6657-4_5. BibTeX |
| 205. | C. Pichler, S. Selberherr: "Rapid Semiconductor Process Design with the VISTA Framework: Integration of Simulation Tools"; Talk: International Conference on Modelling and Simulation, Pittsburgh; 10.05.1993 - 12.05.1993; in "Proceedings IASTED International Conference on Modelling and Simulation", (1993), 147 - 150. BibTeX |
| 204. | M. Hackel, H. Kosina, S. Selberherr: "Steady-State Electron Transport in Silicon Dioxide Employing Different Electronic Band-Structures"; Talk: International Workshop on Computational Electronics (IWCE), Leeds, UK; 11.08.1993 - 13.08.1993; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (1993), 186 - 190. BibTeX |
| 203. | S. Selberherr: "Technology Computer-Aided Design"; Talk: International Workshop on Computational Electronics (IWCE), Leeds, UK; (invited) 11.08.1993 - 13.08.1993; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (1993), 37 - 44. BibTeX |
| 202. | S. Halama, F. Fasching, C. Fischer, H. Kosina, E. Leitner, C. Pichler, H. Pimingstorfer, H. Puchner, G. Rieger, G. Schrom, T. Simlinger, M. Stiftinger, H. Stippel, E. Strasser, W. Tuppa, K. Wimmer, S. Selberherr: "The Viennese Integrated System for Technology CAD Applications"; Talk: Workshop on Technology CAD Systems, Wien; (invited) 06.09.1993 in "Proceedings Technology CAD Systems Workshop", (1993), ISBN: 3-211-82505-3, 197 - 236 doi:10.1007/978-3-7091-9315-0_10. BibTeX |
| 201. | H. Stippel, S. Selberherr: "Three Dimensional Monte Carlo Simulation of Ion Implantation with Octree Based Point Location"; Poster: VLSI Process and Device Modeling Workshop (VPAD), Nara; 14.05.1993 - 15.05.1993; in "Proceedings VPAD Workshop", (1993), ISBN: 0-7803-1338-0, 122 - 123. BibTeX |
| 200. | P. Habas, S. Selberherr: "A Closed-Loop Extraction of the Spatial Distribution of Interface Traps Based on Numerical Model of the Charge-Pumping Experiment"; Poster: Solid State Devices and Materials Conference (SSDM), Tsukuba; 26.08.1992 - 28.08.1992; in "Proceedings SSDM 92 Conference", (1992), 170 - 172. BibTeX |
| 199. | H. Kosina, S. Selberherr: "A Monte Carlo MOSFET Simulator Based on a New Method for the Poisson-Transport Iteration"; Talk: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 31.05.1992 - 01.06.1992; in "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7, 117 - 122. BibTeX |
| 198. | M. Stiftinger, S. Selberherr: "A Physically Based Analytical Model for Vertical DMOS Transistors"; Talk: Internationales wissenschaftliches Kolloquium, Ilmenau; 21.09.1992 - 24.09.1992; in "37. Internationales wissenschaftliches Kolloquium", (1992), 2, 11 - 16. BibTeX |
| 197. | H. Stippel, S. Halama, G. Hobler, K. Wimmer, S. Selberherr: "Adaptive Grid for Monte Carlo Simulation of Ion Implantation"; Talk: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 31.05.1992 - 01.06.1992; in "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7, 231 - 236. BibTeX |
| 196. | H. Pimingstorfer, S. Selberherr: "Advanced MOS Device Engineering Utilizing a Technology CAD Framework"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 18.10.1992 - 24.10.1992; in "Proceedings Solid State and Integrated Circuit Technology 92 Conference", (1992), 391 - 393. BibTeX |
| 195. | M. Stiftinger, S. Selberherr: "An Analytical DC- and AC-Model for Vertical Smart Power DMOS Transistors"; Talk: International Seminar on Power Semiconductors (ISPS), Prag; 09.09.1992 - 11.09.1992; in "Proceedings ISPS 92", (1992), 89 - 93. BibTeX |
| 194. | O. Heinreichsberger, P. Habas, S. Selberherr: "Analysis of Geometric Charge-Pumping Components in a Thin-Film SOI Device"; Talk: European Solid-State Device Research Conference (ESSDERC), Leuven; 14.09.1992 - 17.09.1992; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1992), ISBN: 0-444-89478-0, 819 - 822 doi:10.1016/0167-9317(92)90552-3. BibTeX |
| 193. | P. Habas, O. Heinreichsberger, S. Selberherr: "Analysis of the Degradation of n-channel LDD MOSFETs by Numerical Simulation of the Carge-Pumping Experiment"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 18.10.1992 - 24.10.1992; in "Proceedings Solid State and Integrated Circuit Technology 92 Conference", (1992), 691 - 693. BibTeX |
| 192. | R. Bauer, S. Selberherr: "Calculating Coupling Capacitances of Three-Dimensional Interconnections"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 18.10.1992 - 24.10.1992; in "Proceedings Solid State and Integrated Circuit Technology 92 Conference", (1992), 697 - 699. BibTeX |
| 191. | S. Halama, F. Fasching, H. Pimingstorfer, W. Tuppa, S. Selberherr: "Consistent User Interface and Task-Level Architecture of a TCAD System"; Poster: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 31.05.1992 - 01.06.1992; in "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7, 237 - 242. BibTeX |
| 190. | W. Gartner, K. Wimmer: "Diffusion in Layered Matter: Selective Excitation Decoding, Magnetic Resonance Images in the Applied Sciences"; Talk: Workshop Syllabus, Durham; 26.10.1992 - 28.10.1992; in "Proceedings Workshop Syllabus", (1992), 16. BibTeX |
| 189. | S. Halama, S. Selberherr: "Future Aspects of Process and Device Simulation"; Talk: Semiconductor Engineering and Technology Symposium (SET), Warschau; (invited) 12.10.1992 - 14.10.1992; in "Abstracts SET 92 Conference", (1992), ISBN: 83-01-11293-x, 83 - 85. BibTeX |
| 188. | H. Stippel, F. Fasching, C. Fischer, S. Halama, H. Pimingstorfer, W. Tuppa, K. Wimmer, S. Selberherr: "Implementation of a TCAD Framework"; Talk: European Simulation Multiconference (ESM), York; 01.06.1992 - 03.06.1992; in "Proceedings European Simulation Multiconference", (1992), ISBN: 1-56555-013-7, 131 - 135. BibTeX |
| 187. | H. Kosina, S. Selberherr: "Improved Algorithms in Monte Carlo Device Simulation"; Talk: International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA; (invited) 28.05.1992 - 29.05.1992; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (1992), 43 - 48. BibTeX |
| 186. | W. Bürger, M. Faber, M. Hackel, H. Markum, M. Müller: "Inhomogeneous Universes from Lattice QCD with Dynamical Quarks"; Talk: International Symposium on Nuclear Astrophysics, Karlsruhe; 06.07.1992 - 10.07.1992; in "Proceedings of the International Symposium on Nuclear Astrophysics", (1992), 441 - 446. BibTeX |
| 185. | P. Grubmair, P. Habas, O. Heinreichsberger, H. Kosina, C. Sala, S. Selberherr: "Recent Advances in Device Simulation at the TU-Vienna"; Talk: International Semiconductor Conference (CAS), Sinaia; (invited) 06.10.1992 - 11.10.1992; in "Proceedings CAS 92 Conference", (1992), 347 - 358. BibTeX |
| 184. | W. Bürger, M. Faber, M. Hackel, H. Markum, M. Müller: "Surface Energy and Chiral Interface of a Coexisting Quark-Hadron System"; Talk: Particle Production in Highly Exited Matter Conference, Il Ciocco; 12.07.1992 - 24.07.1992; in "Proceedings of Particle Production in Highly Exited Matter Conference", (1992), 239 - 241. BibTeX |
| 183. | S. Selberherr: "Technology Computer-Aided Design"; Talk: International Conference on Science and Technology of Electron Devices (STEDCON), Kruger Park; (invited) 16.11.1992 - 18.11.1992; in "Abstracts STEDCON 92 Conference", (1992), 26. BibTeX |
| 182. | H. Stippel, G. Hobler, S. Selberherr: "Three-Dimensional Simulation of Ion Implantation"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 18.10.1992 - 24.10.1992; in "Proceedings Solid State and Integrated Circuit Technology 92 Conference", (1992), 703 - 705. BibTeX |
| 181. | P. Habas, O. Heinreichsberger, S. Selberherr: "Transient Two-Dimensional Numerical Analysis of the Charge-Pumping Experiment"; Talk: European Solid-State Device Research Conference (ESSDERC), Leuven; 14.09.1992 - 17.09.1992; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1992), ISBN: 0-444-89478-0, 687 - 690 doi:10.1016/0167-9317(92)90522-S. BibTeX |
| 180. | E. Langer, S. Selberherr: "Transport in MOSFETs, MODFETs and HEMTs"; Talk: International Symposium on Signal, Systems, and Electronics (ISSSE), Paris; (invited) 01.09.1992 - 04.09.1992; in "Proceedings ISSSE 92", (1992), 626 - 633. BibTeX |
| 179. | H. Brand, S. Selberherr: "Two Dimensional Simulation of Thermal Runaway in a Nonplanar GTO-Thyristor"; Talk: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 31.05.1992 - 01.06.1992; in "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7, 129 - 134. BibTeX |
| 178. | P. Habas, A. Lugbauer, S. Selberherr: "Two-Dimensional Numerical Modeling of Interband Tunneling Accounting for Nonuniform Electric Field"; Talk: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 31.05.1992 - 01.06.1992; in "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7, 135 - 140. BibTeX |
| 177. | O. Heinreichsberger, S. Selberherr, M. Stiftinger: "3D MOS Device Simulation on a Connection Machine"; Talk: Conference on Parallel Processing for Scientific Computing, Houston; 25.03.1991 - 27.03.1991; in "Abstracts SIAM Conf. in Parallel Processing for Scientific Computing", (1991), ISBN: 0-89871-303-x, 388 - 393. BibTeX |
| 176. | M. Stiftinger, O. Heinreichsberger, S. Selberherr: "A Collection of Iterative Algorithms for VLSI-Device Simulation"; Talk: International Congress on Industrial and Applied Mathematics (ICIAM), Washington; (invited) 08.07.1991 - 12.07.1991; in "Abstracts ICIAM 91 Conference", (1991), 205. BibTeX |
| 175. | F. Fasching, C. Fischer, S. Halama, H. Pimingstorfer, H. Read, S. Selberherr, H. Stippel, W. Tuppa, P. Verhas, K. Wimmer: "A New Open Technology CAD System"; Talk: European Solid-State Device Research Conference (ESSDERC), Montreux; 16.09.1991 - 19.09.1991; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1991), ISBN: 0-444-89066-1, 217 - 220 doi:10.1016/0167-9317(91)90216-Z. BibTeX |
| 174. | F. Fasching, C. Fischer, S. Selberherr, H. Stippel, W. Tuppa, H. Read: "A PIF Implementation for TCAD Purposes"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Zürich; 12.09.1991 - 14.09.1991; in "Proceedings SISDEP 91", (1991), ISBN: 3-89191-476-8, 477 - 482. BibTeX |
| 173. | H. Pimingstorfer, S. Halama, S. Selberherr: "A TCAD Environment for Process and Device Engineering"; Talk: International Conference on VLSI and CAD (ICVC), Seoul; 22.10.1991 - 25.10.1991; in "Proceedings International Conference on VLSI and CAD 91", (1991), 280 - 283. BibTeX |
| 172. | H. Pimingstorfer, S. Halama, S. Selberherr, K. Wimmer, P. Verhas: "A Technology CAD Shell"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Zürich; 12.09.1991 - 14.09.1991; in "Proceedings SISDEP 91", (1991), ISBN: 3-89191-476-8, 409 - 416. BibTeX |
| 171. | P. Lindorfer: "An Ideality Factor Formulation of Schottky Boundary Conditions in Numerical Device Simulation"; Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Grönenbach; 14.05.1991 - 17.05.1991; . BibTeX |
| 170. | F. Fasching, C. Fischer, S. Halama, H. Pimingstorfer, H. Read, S. Selberherr, H. Stippel, P. Verhas, K. Wimmer: "An Integrated Technology CAD Environment"; Talk: VLSI Technology, Systems and Applications Symposium (VLSITSA), Taipeh; 22.05.1991 - 24.05.1991; in "Proceedings VLSI Technology, Systems and Applications Symposium", (1991), ISBN: 0-7803-0036-x, 147 - 151. BibTeX |
| 169. | H. Kosina, S. Selberherr: "Analysis of Filter Techniques for Monte-Carlo Device Simulation"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Zürich; 12.09.1991 - 14.09.1991; in "Proceedings SISDEP 91", (1991), ISBN: 3-89191-476-8, 251 - 256. BibTeX |
| 168. | P. Verhas, S. Selberherr: "Automatic Device Characterization"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Zürich; 12.09.1991 - 14.09.1991; in "Proceedings SISDEP 91", (1991), ISBN: 3-89191-476-8, 399 - 406. BibTeX |
| 167. | S. Halama, G. Hobler, K. Wimmer, S. Selberherr: "Eine neue Methode zur Simulation der Diffusion in allgemeinen Strukturen"; Talk: Seminar Grundlagen und Technologie elektronischer Bauelemente, Großarl; 20.03.1991 - 23.03.1991; in "Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente", (1991), 20 - 26. BibTeX |
| 166. | S. Selberherr: "Low-Temperature Operation"; Talk: European School on Device Modelling, Bologna; (invited) 18.03.1991 - 20.03.1991; in "Proceedings European School on Device Modelling", (1991), 71 - 100. BibTeX |
| 165. | O. Heinreichsberger, S. Selberherr, M. Stiftinger: "Massively Parallel Solution of the Three-Dimensional Van Roosbroeck Equations"; Talk: Numerical Simulation Conference, Berlin; 05.05.1991 - 08.05.1991; in "Abstracts NUMSIM'91", (1991), ISSN: 0933-789x, 81 - 88. BibTeX |
| 164. | H. Kosina, P. Lindorfer, S. Selberherr: "Monte-Carlo-Poisson Coupling Using Transport Coefficients"; Talk: European Solid-State Device Research Conference (ESSDERC), Montreux; 16.09.1991 - 19.09.1991; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1991), ISBN: 0-444-89066-1, 53 - 56 doi:10.1016/0167-9317(91)90182-D. BibTeX |
| 163. | E. Langer: "Numerical Simulation of MOS Transistors"; Talk: IMA Workshop on Semiconductors, Minneapolis; (invited) 22.07.1991 - 02.08.1991; in "Proceedings IMA Workshop on Semiconductors", (1991), 1 - 29. BibTeX |
| 162. | K. Wimmer, R. Bauer, S. Halama, G. Hobler, S. Selberherr: "Simulation nichtplanarer Herstellungsprozesse mit PROMIS"; Talk: Seminar Grundlagen und Technologie elektronischer Bauelemente, Großarl; 20.03.1991 - 23.03.1991; in "Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente", (1991), 10 - 19. BibTeX |
| 161. | P. Lindorfer, J. Ashworth, S. Selberherr: "Simulation of GaAs Power and Low Noise Microwave Devices with MINIMOS"; Talk: European Microwave Conference, Stuttgart; (invited) 09.09.1991 - 13.09.1991; in "Proceedings 21st European Microwave Conference", (1991), 173 - 179. BibTeX |
| 160. | S. Selberherr, C. Fischer, S. Halama, H. Pimingstorfer, H. Read, H. Stippel, P. Verhas, K. Wimmer: "The Viennese TCAD System"; Talk: VLSI Process and Device Modeling Workshop (VPAD), Oiso; (invited) 26.05.1991 - 27.05.1991; in "Proceedings VPAD Workshop", (1991), 32 - 35. BibTeX |
| 159. | K. Traar, M. Stiftinger, O. Heinreichsberger, S. Selberherr: "Three-Dimensional Simulation of Semiconductor Devices on Supercomputers"; Talk: Conference on Supercomputing, Köln; 17.06.1991 - 21.06.1991; in "Proceedings ACM Conf. on Supercomputing", (1991), ISBN: 0-89791-434-1, 154 - 162 doi:10.1145/109025.109069. BibTeX |
| 158. | O. Heinreichsberger, S. Selberherr: "Three-Dimensional Transient Device Simulation with MINIMOS"; Talk: Institute for Mathematics and Computer Science Conference (IMACS), Dublin; (invited) 22.07.1991 - 26.07.1991; in "Proceedings IMACS 91 Conference", (1991), 4, 1692 - 1694. BibTeX |
| 157. | K. Wimmer, R. Bauer, S. Halama, G. Hobler, S. Selberherr: "Transformation Methods for Nonplanar Process Simulation"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Zürich; 12.09.1991 - 14.09.1991; in "Proceedings SISDEP 91", (1991), ISBN: 3-89191-476-8, 131 - 138. BibTeX |
| 156. | G. Nanz, D. Bräunig, P. Dickinger, S. Selberherr: "3D-Simulation of Single Event Upsets in a High Voltage Diode"; Talk: Yugoslav International Conference on Microelectronics (MIEL), Ljubljana; 14.05.1990 - 16.05.1990; in "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1990), 143 - 146. BibTeX |
| 155. | M. Stiftinger, O. Heinreichsberger, S. Selberherr: "A Comparison of Various Accelerators for the Iterative Solution of Large Nonsymmetric Systems"; Talk: Conference on Scientific Computation, Wien; 14.06.1990 - 16.06.1990; in "Abstracts Conference on Scientific Computation", (1990), 82 - 85. BibTeX |
| 154. | S. Selberherr, O. Heinreichsberger, M. Stiftinger, K. Traar: "About the Solution of the Three-Dimensional Semiconductor Device Equations on Vector-Concurrent Computers"; Talk: Symposium on Supercomputer Simulation of Semiconductor Devices, Minneapolis; (invited) 19.11.1990 - 20.11.1990; in "Manuscripts Symposium on Supercomputer Simulation of Semiconductor Devices", (1990), ISSN: 0010-4655, 145 - 156. BibTeX |
| 153. | J. Ashworth, P. Lindorfer: "Analysis of the Breakdown Phenomena in GaAs MESFET's"; Talk: Gallium Arsenide and Related Compounds Conference, Jersey; 1990 in "Proceedings GaAs and Related Compounds", (1990), . BibTeX |
| 152. | J. Ashworth, P. Lindorfer: "Analysis of the Breakdown Phenomena in GaAs MESFET's"; Talk: European Solid-State Device Research Conference (ESSDERC), Nottingham; 10.09.1990 - 13.09.1990; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1990), ISBN: 0-7503-0065-5, 241 - 244. BibTeX |
| 151. | K. Wimmer, R. Bauer, S. Selberherr: "Body-Fitting Coordinate Generation for Two-Dimensional Process-Simulation"; Talk: Conference on Signals and Systems, Chengdu; 08.10.1990 - 10.10.1990; in "Abstracts AMSE Conf. Signals and Systems", (1990), 2, 239. BibTeX |
| 150. | P. Dickinger, P. Lindorfer, G. Nanz, S. Selberherr: "Connection of Network and Device Simulation"; Talk: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Honolulu; 03.06.1990 - 04.06.1990; in "NUPAD III Techn. Digest", (1990), 73 - 74. BibTeX |
| 149. | S. Selberherr: "Device Modeling and Physics"; Talk: General Conference of the Condensed Matter Division of the European Physical Society, Lissabon; (invited) 09.04.1990 - 12.04.1990; in "Europhysics Conference Abstracts", (1990), L38. BibTeX |
| 148. | H. Kosina, S. Selberherr: "Efficient Coupling of Monte Carlo and Drift Diffusion Method with Applications to MOSFETs"; Talk: Solid State Devices and Materials Conference (SSDM), Sendai; 22.08.1990 - 24.08.1990; in "Proceedings Solid State Devices and Materials Conference", (1990), ISBN: 4-930813-41-7, 139 - 142. BibTeX |
| 147. | O. Heinreichsberger, S. Selberherr, M. Stiftinger: "Fast Iterative Solution of Carrier Continuity Equations in 3D MOS/MESFET Simulations"; Talk: Copper Mountain Conference on Iterative Methods, Copper Mountain; 01.04.1990 - 05.04.1990; in "Proceedings Copper Mountain Conference on Iterative Methods", (1990), Book 2 of 4, 1 - 7. BibTeX |
| 146. | S. Halama, K. Wimmer, G. Hobler, S. Selberherr: "Finite-Differenzen Dreiecksnetzgenerierung für die Prozess-Simulation mit PROMIS"; Talk: Workshop Numerische Simulation für Technologieentwicklung (NuTech), Garmisch-Partenkirchen; 20.09.1990 - 21.09.1990; in "Proceedings NuTech", (1990), 3. BibTeX |
| 145. | K. Traar, W. Mader, O. Heinreichsberger, S. Selberherr, M. Stiftinger: "High Performance Preconditioning on Supercomputers for the 3D Device Simulator MINIMOS"; Talk: Supercomputing Conference, New York; 12.11.1990 - 16.11.1990; in "Proceedings Supercomputing 90 Conf.", (1990), 224 - 231. BibTeX |
| 144. | P. Dickinger, G. Nanz, S. Selberherr: "Measurement and Simulation of Degradation Effects in High Voltage DMOS Devices"; Talk: European Solid-State Device Research Conference (ESSDERC), Nottingham; 10.09.1990 - 13.09.1990; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1990), ISBN: 0-7503-0065-5, 369 - 372. BibTeX |
| 143. | P. Habas, S. Selberherr: "Numerical Simulation of MOS-Devices with Non-Degenerate Gate"; Talk: European Solid-State Device Research Conference (ESSDERC), Nottingham; 10.09.1990 - 13.09.1990; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1990), ISBN: 0-7503-0065-5, 161 - 164. BibTeX |
| 142. | O. Heinreichsberger, S. Selberherr, M. Stiftinger, K. Traar: "On Preconditioning Non-Symmetric Matrix Iterations"; Talk: Conference on Scientific Computation, Wien; 14.06.1990 - 16.06.1990; in "Abstracts Conference on Scientific Computation", (1990), 34 - 37. BibTeX |
| 141. | K. Wimmer, R. Bauer, S. Halama, G. Hobler, S. Selberherr: "Prozess-Simulation in nichtplanaren Strukturen mit PROMIS"; Talk: Workshop Numerische Simulation für Technologieentwicklung (NuTech), Garmisch-Partenkirchen; 20.09.1990 - 21.09.1990; in "Proceedings NuTech", (1990), 4. BibTeX |
| 140. | G. Hobler, S. Halama, K. Wimmer, S. Selberherr, H. Pötzl: "RTA-Simulations with the 2-D Process Simulator PROMIS"; Talk: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Honolulu; 03.06.1990 - 04.06.1990; in "NUPAD III Techn. Digest", (1990), 13 - 14. BibTeX |
| 139. | G. Nanz: "Selbst-adaptive Finite-Differenzen-Gitter in der Halbleiterbauelementesimulation"; Talk: GAMM 90, Hannover; 1990. BibTeX |
| 138. | P. Dickinger, G. Nanz, S. Selberherr: "Self-Consistent Simulation of Heat Generation and Conduction in Semiconductor Devices"; Talk: Yugoslav International Conference on Microelectronics (MIEL), Ljubljana; 14.05.1990 - 16.05.1990; in "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1990), 157 - 160. BibTeX |
| 137. | S. Selberherr, H. Kosina: "Simulation of Nanometer MOS-Devices with MINIMOS"; Talk: VLSI Process and Device Modeling Workshop (VPAD), Kawasaki; (invited) 20.08.1990 - 21.08.1990; in "Proceedings 1990 VLSI Process/Device Modeling Workshop", (1990), 2 - 5. BibTeX |
| 136. | H. Kosina, K. Wimmer, C. Fischer, S. Selberherr: "Simulation of ULSI Processes and Devices"; Talk: Computer Aided Innovation of New Materials, Tokyo; (invited) 28.08.1990 - 31.08.1990; in "Abstracts Computer Aided Innovation of New Materials 90", (1990), 46. BibTeX |
| 135. | H. Kosina, K. Wimmer, C. Fischer, S. Selberherr: "Simulation of ULSI Processes and Devices"; Talk: Computer Aided Innovation of New Materials, Tokyo, Japan; (invited) 28.08.1990 - 31.08.1990; in "Proceedings Computer Aided Innovation of New Materials 90", (1990), ISBN: 0-444-88864-0, 723 - 728. BibTeX |
| 134. | W. Kausel, J.O. Nylander, G. Nanz, S. Selberherr, H. Pötzl: "BAMBI - A Transient 2D-MESFET Model with General Boundary Conditions Including Schottky and Current Controlled Contacts"; Talk: Yugoslav International Conference on Microelectronics (MIEL), Nis; 09.05.1989 - 11.05.1989; in "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1989), 1, ISBN: 0-948577-33-9, 421 - 429. BibTeX |
| 133. | G. Nanz, P. Dickinger, C. Fischer, W. Kausel, S. Selberherr: "Bauelementsimulation mit BAMBI"; Talk: Workshop Numerische Simulation für Technologieentwicklung (NuTech), Bad Tölz; 02.08.1989 - 03.08.1989; in "Proceedings NuTech 89", (1989), 6. BibTeX |
| 132. | S. Selberherr: "Device and Process Modeling"; Talk: International Symposium on Signal, Systems, and Electronics (ISSSE), Erlangen; (invited) 18.09.1989 - 20.09.1989; in "Proceedings ISSSE 89", (1989), 333 - 338. BibTeX |
| 131. | E. Langer: "Fundamentals about Surface Acoustic Wave Propagation"; Talk: Symposium on Coupled Fields - Theory and Applications, Zakopane; (invited) 07.11.1989 - 10.11.1989; . BibTeX |
| 130. | P. Lindorfer, S. Selberherr: "GaAs-MESFET Simulation with MINIMOS"; Talk: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), San Diego; 22.10.1989 - 25.10.1989; in "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (1989), 277 - 280 doi:10.1109/GAAS.1989.69342. BibTeX |
| 129. | S. Selberherr, E. Langer: "Low Temperature MOS Device Modeling"; Talk: Workshop on Low Temperature Semiconductor Electronics, Burlington; 07.08.1989 - 08.08.1989; in "Proceedings Workshop On Low Temperature Semiconductor Electronics", (1989), 68 - 72. BibTeX |
| 128. | P. Lindorfer, S. Selberherr: "MESFET Analysis with MINIMOS"; Talk: European Solid-State Device Research Conference (ESSDERC), Berlin; 11.09.1989 - 14.09.1989; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1989), ISBN: 3-540-51000-1, 92 - 96 doi:10.1007/978-3-642-52314-4_18. BibTeX |
| 127. | O. Heinreichsberger, P. Habas, P. Lindorfer, G. Mayer, S. Selberherr, M. Stiftinger: "Neuere Entwicklungen bei MINIMOS"; Talk: Workshop Numerische Simulation für Technologieentwicklung (NuTech), Bad Tölz; 02.08.1989 - 03.08.1989; in "Proceedings NuTech 89", (1989), 7. BibTeX |
| 126. | S. Selberherr, E. Langer: "Numerical Simulation of Semiconductor Devices"; Talk: European Simulation Multiconference (ESM), Rom; (invited) 07.06.1989 - 09.06.1989; in "Proceedings European Simulation Multiconference ESM '89", (1989), 291 - 296. BibTeX |
| 125. | P. Dickinger, G. Nanz, S. Selberherr: "On-Resistance and Breakdown in Resurf Devices"; Talk: Yugoslav International Conference on Microelectronics (MIEL), Nis; 09.05.1989 - 11.05.1989; in "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1989), 1, ISBN: 0-948577-33-9, 437 - 442. BibTeX |
| 124. | S. Selberherr: "Physical Models for Silicon VLSI"; Talk: Short Course on Semiconductor Device Modelling, Leeds; (invited) 03.04.1989 - 07.04.1989; in "Proceedings Short Course on Semiconductor Device Modelling", (1989), 70 - 88 doi:10.1007/978-1-4471-1033-0_6. BibTeX |
| 123. | S. Selberherr: "The State of the Art in Device Simulation"; Talk: Congresso da Sociedade Brasileira de Microeletronica, Porto Alegre; (invited) 12.07.1989 - 14.07.1989; in "Proceedings IV Congresso da SBMICRO", (1989), Vol.1, 151 - 166. BibTeX |
| 122. | S. Selberherr: "Three Dimensional Device Modeling with MINIMOS 5"; Talk: VLSI Process and Device Modeling Workshop (VPAD), Osaka; (invited) 26.05.1989 - 27.05.1989; in "Proceedings 1989 VLSI Process/Device Modeling Workshop", (1989), 40 - 41. BibTeX |
| 121. | S. Selberherr, E. Langer: "Three Dimensional Process and Device Modeling"; Talk: Yugoslav International Conference on Microelectronics (MIEL), Nis; (invited) 09.05.1989 - 11.05.1989; in "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1989), 1, ISBN: 0-948577-33-9, 383 - 407. BibTeX |
| 120. | P. Dickinger, G. Nanz, S. Selberherr: "Two-Dimensional Simulation of a Bipolar Dynamic Memory Cell"; Talk: Conference on Modelling, Simulation and Control (MSC), Istanbul; 29.06.1989 - 01.07.1989; in "Proceedings AMSE Conf. Modelling, Simulation and Control", (1989), 22, 33 - 38. BibTeX |
| 119. | G. Nanz: "Zweidimensionale Simulation allg. Halbleiterbauelemente"; Talk: 2nd Workshop Device Simulation, Gesellschaft für Mathematik und Datenverarbeitung, St. Augustin; 15.11.1989 - 16.11.1989; . BibTeX |
| 118. | G. Nanz: "Zweidimensionale Simulation allgemeiner Halbleiterbauelemente "; Talk: 2nd Workshop Device Simulation, Gesellschaft für Mathematik und Datenverarbeitung, St. Augustin; 15.11.1989 - 16.11.1989; in "Proceedings 2nd Workshop Device Simulation", (1989), #. BibTeX |
| 117. | M. Thurner, S. Selberherr: "3D MOSFET Device Effects due to Field Oxide"; Talk: European Solid-State Device Research Conference (ESSDERC), Montpellier; 13.09.1988 - 16.09.1988; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1988), 245 - 248 doi:10.1051/jphyscol:1988450. BibTeX |
| 116. | W. Kausel, G. Nanz, S. Selberherr, H. Pötzl: "A New Boundary Condition for Device Simulation Considering Outer Components"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Bologna; 26.09.1988 - 28.09.1988; in "Proceedings SISDEP 88", (1988), 625 - 636. BibTeX |
| 115. | G. Kovacs, G. Trattnig, E. Langer: "Accurate Determination of Material Constants of Piezoelectric Crystals from SAW Velocity Measurements"; Talk: Ultrasonics Symposium, Chicago; 02.10.1988 - 05.10.1988; in "Proceedings Ultrasonics Symposium", (1988), 269 - 272. BibTeX |
| 114. | G. Nanz, W. Kausel, S. Selberherr: "Automatic Grid Control in Device Simulation"; Talk: Numerical Grid Generation in Computational Fluid Dynamics Conference, Miami Beach; 05.12.1988 - 09.12.1988; in "Proceedings Numerical Grid Generation in Computational Fluid Mechanics Conf.", (1988), ISBN: 0-906674-68-9, 1039 - 1047. BibTeX |
| 113. | G. Nanz, P. Dickinger, W. Kausel, S. Selberherr: "Avalanche Breakdown in the ALDMOST"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Bologna; 26.09.1988 - 28.09.1988; in "Proceedings SISDEP 88", (1988), 175 - 181. BibTeX |
| 112. | W. Kausel, G. Nanz, S. Selberherr, H. Pötzl: "BAMBI - A Transient Two-Dimensional Device Simulator Using Implicit Backward Euler's Method and a Totally Self Adaptive Grid"; Talk: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Santa Clara; 09.05.1988 - 10.05.1988; in "Proceedings of the International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits", (1988), . BibTeX |
| 111. | S. Selberherr: "MOS Device Modeling at Liquid-Nitrogen Temperature"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; (invited) 11.12.1988 - 14.12.1988; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (1988), 496 - 499 doi:10.1109/IEDM.1988.32863. BibTeX |
| 110. | G. Hobler, S. Selberherr: "Monte Carlo Simulation of Ion Implantation into Two- and Three-Dimensional Structures"; Talk: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Santa Clara; 09.05.1988 - 10.05.1988; in "Proceedings of the International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits", (1988), . BibTeX |
| 109. | M. Thurner, P. Lindorfer, S. Selberherr: "Numerical Treatment of Nonrectangular Field-Oxide for 3D MOSFET Simulation"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Bologna; 26.09.1988 - 28.09.1988; in "Proceedings SISDEP 88", (1988), 375 - 381. BibTeX |
| 108. | G. Nanz, P. Dickinger, W. Kausel, S. Selberherr: "On-Resistance in the ALDMOST"; Talk: European Solid-State Device Research Conference (ESSDERC), Montpellier; 13.09.1988 - 16.09.1988; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1988), ISBN: 2-86883-100-1, 629 - 632 doi:10.1051/jphyscol:19884131. BibTeX |
| 107. | S. Selberherr: "Process Modeling"; Talk: Microcircuit Engineering Conference, Wien; (invited) 20.09.1988 - 22.09.1988; in "Proceedings of the Microcircuit Engineering Conference", (1988), 605 - 610 doi:10.1016/0167-9317(89)90129-9. BibTeX |
| 106. | S. Selberherr: "Process Modeling"; Talk: Microcircuit Engineering Conference, Wien; (invited) 20.09.1988 - 22.09.1988; . BibTeX |
| 105. | S. Selberherr: "Recent Advances in Numerical Device Simulation"; Talk: Microelectronic Seminar, Budapest; (invited) 10.10.1988 - 13.10.1988; in "Abstracts Microelectronic Seminar 88", (1988), 1. BibTeX |
| 104. | A.R. Baghai-Wadji, O. Männer, S. Selberherr, F. Seifert: "Analysis and Measurement of Transducer End Radiation in SAW Filters on Strongly Coupling Substrates"; Talk: Forum Europeen Temps-Frequence, Besancon; 18.03.1987 - 20.03.1987; in "Proceedings of the 1er Forum Europeen Temps-Frequence", (1987), 315 - 319. BibTeX |
| 103. | M. Thurner, S. Selberherr: "Comparison of Long- and Short-Channel MOSFETs Carried Out by 3D-MINIMOS"; Talk: European Solid-State Device Research Conference (ESSDERC), Bologna; 14.09.1987 - 17.09.1987; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1987), 409 - 412. BibTeX |
| 102. | M. Thurner, S. Selberherr: "Die Erweiterung von MINIMOS auf ein 3D Simulationsprogramm"; Talk: Informationstagung Mikroelektronik (ME), Wien; 14.10.1987 - 16.10.1987; in "Bericht der Informationstagung Mikroelektronik", (1987), ISBN: 3-211-82023-x, 116 - 121 doi:10.1007/978-3-7091-8940-5_18. BibTeX |
| 101. | G. Hobler, S. Selberherr: "Efficient Two-Dimensional Monte-Carlo Simulation of Ion Implantation"; Talk: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 17.06.1987 - 19.06.1987; in "Proceedings Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1987), 225 - 230. BibTeX |
| 100. | S. Selberherr: "Low Temperature MOS Device Modeling"; Talk: Meeting of the Electrochemical Society, Low Temperature Electronics and High Temperature Superconductors, Honolulu; (invited) 18.10.1987 - 23.10.1987; in "172nd ECS Meeting", (1987), 87-2, 464. BibTeX |
| 99. | S. Selberherr: "Low Temperature MOS Device Modeling"; Talk: Meeting of the Electrochemical Society (ECS), Honolulu; (invited) 18.10.1987 - 23.10.1987; in "172nd ECS Meeting", (1987), 88-9, 70 - 86. BibTeX |
| 98. | P. Markowich, Ch. Schmeiser, S. Selberherr: "Numerical Methods in Semiconductor Device Simulation"; Talk: Numerical Methods and Approximation Theory, Nis; 18.08.1987 - 21.08.1987; in "Numerical Methods and Approximation Theory", (1987), 287 - 299. BibTeX |
| 97. | G. Nanz, P. Dickinger, W. Kausel, S. Selberherr: "Punch-Through in Resurf Devices"; Talk: International Conference on Modelling and Simulation, Karlsruhe; 20.07.1987 - 22.07.1987; in "Proceedings of the International Conference on Modelling and Simulation", (1987), 2A, 63 - 70. BibTeX |
| 96. | G. Nanz, P. Dickinger, W. Kausel, S. Selberherr: "Punch-Through in Resurf Devices"; Talk: International Conference on Modelling and Simulation, Karlsruhe; 20.07.1987 - 22.07.1987; in "Abstracts of the International Conference on Modelling and Simulation", (1987), 1, 142 - 143. BibTeX |
| 95. | S. Selberherr: "The Concept of BAMBI"; Talk: Symposium on BAMBI, Västeras; (invited) 03.09.1987 - 04.09.1987; in "Abstracts of the 2nd Symposium on BAMBI", (1987), . BibTeX |
| 94. | M. Thurner, S. Selberherr: "The Extension of MINIMOS to a Three Dimensional Simulation Program"; Talk: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 17.06.1987 - 19.06.1987; in "Proceedings Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1987), 327 - 332. BibTeX |
| 93. | S. Selberherr: "The Use and Construction of Numerical Simulation Packages Based on Physical Device Models for the Design and Analysis of Silicon VLSI"; Talk: Short Course on Semiconductor Device Modelling, Leeds; (invited) 30.03.1987 - 03.04.1987; in "Proceedings Short Course on Semiconductor Device Modelling", (1987), 187 - 198. BibTeX |
| 92. | W. Kausel, G. Nanz, S. Selberherr, H. Pötzl: "Two-Dimensional Transient Simulation of the Turn-On Behavior of a planar MOS-Transistor"; Talk: International Conference on Modelling and Simulation, New Delhi; 29.10.1987 - 31.10.1987; in "Abstracts of the International Conference on Modelling and Simulation", (1987), 50 - 51. BibTeX |
| 91. | W. Kausel, G. Nanz, S. Selberherr, H. Pötzl: "Two-Dimensional Transient Simulation of the Turn-on Behavior of a planar MOS-Transistor"; Talk: International Conference on Modelling and Simulation, New Delhi; 29.10.1987 - 31.10.1987; in "Proceedings of the International Conference on Modelling and Simulation", (1987), A, 13 - 24. BibTeX |
| 90. | G. Hobler, S. Selberherr: "Verification of Ion Implantation Models by Monte-Carlo Simulations"; Talk: European Solid-State Device Research Conference (ESSDERC), Bologna; 14.09.1987 - 17.09.1987; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1987), 445 - 448. BibTeX |
| 89. | W. Kausel, G. Nanz, S. Selberherr, H. Pötzl: "Zweidimensionale transiente Simulation des Einschaltverhaltens eines planaren MOS-Transistors"; Talk: Informationstagung Mikroelektronik (ME), Wien; 14.10.1987 - 16.10.1987; in "Bericht der Informationstagung Mikroelektronik", (1987), ISBN: 3-211-82023-x, 100 - 105 doi:10.1007/978-3-7091-8940-5_15. BibTeX |
| 88. | A.R. Baghai-Wadji, S. Selberherr, F. Seifert: "A Green's Function Approach to the Electrostatic Problem of Single, Coupled and Comb-like Metallic Structures in Anisotropic Multilayered Media"; Talk: International Conference on Modelling and Simulation, Athen; 29.09.1986 - 01.10.1986; in "Proceedings of the International Conference on Modelling and Simulation", (1986), 2.1, 109 - 120. BibTeX |
| 87. | A.R. Baghai-Wadji, S. Selberherr, F. Seifert: "A Green's Function Approach to the Electrostatic Problem of Single, Coupled and Comb-like Metallic Structures in Anisotropic Multilayered Media"; Talk: International Conference on Modelling and Simulation, Athen; 29.09.1986 - 01.10.1986; in "Abstracts of the International Conference on Modelling and Simulation", (1986), 2, 39. BibTeX |
| 86. | W. Hänsch, C. Werner, S. Selberherr: "A Hot Carrier Analysis Utilizing MINIMOS 3.0"; Talk: International Symposium on VLSI Technology, San Diego; 28.05.1986 - 30.05.1986; in "Proceedings of the International Symposium on VLSI Technology", (1986), 63 - 64. BibTeX |
| 85. | M. Budil, E. Guerrero, T. Brabec, S. Selberherr, H. Pötzl: "A New Model for Determination of Point Defect Equilibrium Concentration in Silicon"; Talk: International Workshop on Numerical Modelling of Semiconductors (NUMOS), Los Angeles; 11.12.1986 - 12.12.1986; in "Proceedings of the International Workshop on Numerical Modelling of Semiconductors", (1986), 37 - 44. BibTeX |
| 84. | W. Jüngling, G. Hobler, S. Selberherr, H. Pötzl: "Adaptive Grids in Space and Time for Process and Device Simulators"; Talk: Numerical Grid Generation in Computational Fluid Dynamics Conference, Landshut; 14.07.1986 - 17.07.1986; in "Numerical Grid Generation in Computational Fluid Dynamics Conf.", (1986), ISBN: 0-906674-58-1, 729 - 739. BibTeX |
| 83. | W. Jüngling, P. Pichler, S. Selberherr, H. Pötzl: "Automation in Process- and Device-Simulators"; Talk: International Conference on Automation, Houston; 10.03.1986 - 12.03.1986; in "Proceedings of the 1986 International Conference on Automation", (1986), 530 - 534. BibTeX |
| 82. | S. Selberherr: "BAMBI - The Desire for the Impossible ?"; Talk: Symposium on BAMBI, München; (invited) 25.02.1986 in "Abstracts 1st Symposium on BAMBI", (1986), . BibTeX |
| 81. | F. Straker, S. Selberherr: "Capacitance Computation for VLSI Structures"; Talk: International Conference on Trends in Communications (EUROCON), Paris; 21.04.1986 - 23.04.1986; in "Proceedings of the International Conference on Trends in Communications", (1986), 602 - 608. BibTeX |
| 80. | A.R. Baghai-Wadji, S. Selberherr, F. Seifert: "Closed-Form Electrostatic Field Analysis of Metallic Comb-like Structures Containing Isolated and Interconnected Floating Strips of Arbitrary Topological Complexity. Part I: One-Dimensional Representation"; Talk: International Symposium on Numerical Field Calculation in Electrical Engineering (IGTE), Graz; 22.09.1986 - 23.09.1986; in "Proceedings of the International Symposium on Numerical Field Calculation in Electrical Engineering", (1986), 138 - 145. BibTeX |
| 79. | A.R. Baghai-Wadji, S. Selberherr, F. Seifert: "Closed-Form Electrostatic Field Analysis of Metallic Comb-like Structures Containing Isolated and Interconnected Floating Strips of Arbitrary Topological Complexity. Part II: Two-Dimensional Representation"; Talk: International Symposium on Numerical Field Calculation in Electrical Engineering (IGTE), Graz; 22.09.1986 - 23.09.1986; in "Proceedings of the International Symposium on Numerical Field Calculation in Electrical Engineering", (1986), 146 - 153. BibTeX |
| 78. | A.R. Baghai-Wadji, S. Selberherr, F. Seifert: "Closed-Form Formulae Electrostatic Field Analysis of Metallic Comb-like Structures Containing Isolated and Interconnected Floating Strips of Arbitrary Topological Complexity. Part I: One-Dimensional Representation"; Talk: International Symposium on Numerical Field Calculation in Electrical Engineering (IGTE), Graz; 22.09.1986 - 23.09.1986; in "Abstracts of the International Symposium on Numerical Field Calculation in Electrical Engineering", (1986), 21 - 22. BibTeX |
| 77. | A.R. Baghai-Wadji, S. Selberherr, F. Seifert: "Closed-Form Formulae Electrostatic Field Analysis of Metallic Comb-like Structures Containing Isolated and Interconnected Floating Strips of Arbitrary Topological Complexity. Part II: Two-Dimensional Representation"; Talk: International Symposium on Numerical Field Calculation in Electrical Engineering (IGTE), Graz; 22.09.1986 - 23.09.1986; in "Abstracts of the International Symposium on Numerical Field Calculation in Electrical Engineering", (1986), 23 - 24. BibTeX |
| 76. | S. Selberherr, W. Jüngling: "Device Simulation - Present Situation and Future Trends"; Talk: Device- und Prozesscharakterisierung für höchstkomplexe und ultraschnelle IC-Techniken, Würzburg; (invited) 05.05.1986 - 07.05.1986; in "Abstracts Diskussionssitzung Device- und Prozesscharakterisierung für höchstkomplexe und ultraschnelle IC-Techniken", (1986), 7. BibTeX |
| 75. | W. Jüngling, S. Selberherr: "Modeling and Simulation of IC-Fabrication Steps"; Talk: Device- und Prozesscharakterisierung für höchstkomplexe und ultraschnelle IC-Techniken, Würzburg; (invited) 05.05.1986 - 07.05.1986; in "Abstracts Diskussionssitzung Device- und Prozesscharakterisierung für höchstkomplexe und ultraschnelle IC-Techniken", (1986), 4. BibTeX |
| 74. | M. Budil, W. Jüngling, E. Guerrero, S. Selberherr, H. Pötzl: "Modeling of Point Defect Kinetics During Thermal Oxidation"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Swansea; 21.07.1986 - 23.07.1986; in "Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes", (1986), ISBN: 0-906674-59-x, 384 - 397. BibTeX |
| 73. | A. R. Baghai-Wadji, S. Selberherr, F. Seifert: "Rigorous 3D Electrostatic Field Analysis of SAW Transducers with Closed-Form Formulae"; Talk: Ultrasonics Symposium, Williamsburg; 17.11.1986 - 19.11.1986; in "Proceedings of the Ultrasonics Symposium", (1986), 23 - 28. BibTeX |
| 72. | S. Selberherr: "Silicon Device Simulation"; Talk: Austin Workshop on Process and Device Simulation, Austin, TX, USA; (invited) 17.03.1986 - 18.03.1986; in "Proceedings of the Austin Workshop on Process and Device Simulation", (1986), 1. BibTeX |
| 71. | S. Selberherr: "State of the Art of Computer/Mathematical Simulation Tools"; Talk: Workshop on Modeling of Technology and Devices, Utrecht; (invited) 04.06.1986 in "Abstracts of Modeling of Technology and Devices Workshop", (1986), 1. BibTeX |
| 70. | S. Selberherr: "The Status of MINIMOS"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Swansea; (invited) 21.07.1986 - 23.07.1986; in "Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes", (1986), ISBN: 0-906674-59-x, 2 - 15. BibTeX |
| 69. | G. Hobler, E. Guerrero, S. Selberherr: "Two-Dimensional Modeling of Ion Implantation Induced Point Defects"; Talk: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Santa Clara; 13.11.1986 - 14.11.1986; in "Proceedings of the International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits", (1986), 10 - 11. BibTeX |
| 68. | G. Hobler, E. Langer, S. Selberherr: "Two-Dimensional Modeling of Ion-Implantation"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Swansea; 21.07.1986 - 23.07.1986; in "Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes", (1986), ISBN: 0-906674-59-x, 256 - 270. BibTeX |
| 67. | S. Selberherr: "Bauelementsimulation"; Talk: Physik in der Mikroelektronik, Bad Honnef; (invited) 07.10.1985 - 11.10.1985; in "Symposium über Physik in der Mikroelektronik", (1985), 1 - 2. BibTeX |
| 66. | S. Selberherr: "Numerical Modeling of MOS-Devices: Methods and Problems"; Talk: International Short Course on New Problems and New Solutions for Device and Process Modelling, Dublin; (invited) 17.06.1985 - 18.06.1985; in "Proceedings of the International Short Course on New Problems and New Solutions for Device and Process Modelling", (1985), ISBN: 0-906783-45-3, 122 - 137. BibTeX |
| 65. | Ch. Schmeiser, S. Selberherr, R. Weiss: "On Scaling and Norms for Semiconductor Device Simulation"; Talk: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 19.06.1985 - 21.06.1985; in "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1985), ISBN: 0-906783-43-7, 501 - 506. BibTeX |
| 64. | P. Pichler, W. Jüngling, S. Selberherr, E. Guerrero, H. Pötzl: "Process and Device Simulation with One and the Same Program"; Talk: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 19.06.1985 - 21.06.1985; in "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1985), ISBN: 0-906783-43-7, 477 - 482. BibTeX |
| 63. | W. Jüngling, P. Pichler, S. Selberherr, E. Guerrero, H. Pötzl: "Spatial and Transient Grids for Process and Device Simulators"; Talk: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 19.06.1985 - 21.06.1985; in "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1985), ISBN: 0-906783-43-7, 320 - 325. BibTeX |
| 62. | P. Markowich, S. Selberherr: "Steady State Semiconductor Device Modelling - A State of the Art Report"; Talk: International Conference on Advances in Circuit and Systems, Bejing; 10.06.1985 - 12.06.1985; in "Proceedings of the International Conference on Advances in Circuit and Systems", (1985), ISBN: 9971-978-35-0, 444 - 447. BibTeX |
| 61. | W. Jüngling, P. Pichler, S. Selberherr, H. Pötzl: "ZOMBIE - A Coupled Process-Device Simulator"; Talk: International Conference on Modelling and Simulation, Monastir; 25.11.1985 - 28.11.1985; in "Proceedings of the International Conference on Modelling and Simulation", (1985), 2A, 137 - 146. BibTeX |
| 60. | W. Jüngling, P. Pichler, S. Selberherr, H. Pötzl: "ZOMBIE - A Coupled Process-Device Simulator"; Talk: International Conference on Modelling and Simulation, Monastir; 25.11.1985 - 28.11.1985; in "Abstracts of the International Conference on Modelling and Simulation", (1985), 1, 137 - 138. BibTeX |
| 59. | P. Pichler, W. Jüngling, S. Selberherr, E. Guerrero, H. Pötzl: "Zweidimensionale Prozeßsimulation"; Talk: Informationstagung Mikroelektronik (ME), Wien; 15.10.1985 - 17.10.1985; in "Bericht der Informationstagung Mikroelektronik", (1985), ISBN: 3-211-81893-6, 41 - 46 doi:10.1007/978-3-7091-8821-7_7. BibTeX |
| 58. | G. Franz, A. Franz, S. Selberherr: "2-D Steady State and Transient Simulation of Power Thyristors"; Talk: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in "Proceedings of the International Conference on Modelling and Simulation", (1984), 2.1, 171 - 185. BibTeX |
| 57. | G. Franz, A. Franz, S. Selberherr: "2-D Steady State and Transient Simulation of Power Thyristors"; Talk: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in "Abstracts of the International Conference on Modelling and Simulation", (1984), 2, 28. BibTeX |
| 56. | P. Markowich, S. Selberherr: "A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments"; Talk: SIAM Summer Meeting, Seattle; 16.07.1984 - 20.07.1984; in "Abstracts of SIAM Summer Meeting", (1984), 67. BibTeX |
| 55. | P. Markowich, S. Selberherr: "A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments"; Talk: International Conference on Boundary and Interior Layers (BAIL), Dublin; (invited) 20.06.1984 - 22.06.1984; in "Abstracts of the International Conference on Boundary and Interior Layers", (1984), 4. BibTeX |
| 54. | A. Franz, G. Franz, S. Selberherr: "BAMBI - a Design Model for Power MOSFETs"; Talk: International Conference on Computer-Aided Design (ICCAD), Santa Clara; 12.11.1984 - 15.11.1984; in "Proceedings of the International Conference on Computer-Aided Design", (1984), ISBN: 0-8186-0607-x, 179 - 181. BibTeX |
| 53. | F. Straker, S. Selberherr: "Capacitance Computation for VLSI Structures"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Swansea; 09.07.1984 - 12.07.1984; in "Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes", (1984), ISBN: 0-906674-38-7, 39 - 55. BibTeX |
| 52. | W. Jüngling, P. Pichler, S. Selberherr, E. Guerrero, H. Pötzl: "Comparison of Advanced Models for Coupled Diffusion"; Talk: International Conference on Computer-Aided Design (ICCAD), Santa Clara; 12.11.1984 - 15.11.1984; in "Proceedings of the International Conference on Computer-Aided Design", (1984), ISBN: 0-8186-0607-x, 167 - 169. BibTeX |
| 51. | F. Straker, S. Selberherr: "Computation of VLSI Metalization Capacitance"; Talk: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in "Abstracts of the International Conference on Modelling and Simulation", (1984), 2, 13 - 15. BibTeX |
| 50. | F. Straker, S. Selberherr: "Computation of VLSI Metalization Capacitance"; Talk: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in "Proceedings of the International Conference on Modelling and Simulation", (1984), 2.1, 1 - 18. BibTeX |
| 49. | F. Straker, S. Selberherr: "Computation of Wire and Junction Capacitances in VLSI Structures"; Talk: International Conference on VLSI Multilevel Interconnection, New Orleans; 21.06.1984 - 22.06.1984; in "Proceedings of VLSI Multilevel Interconnection Conference", (1984), IEEE Cat.No 84CH1999-2, 209 - 217. BibTeX |
| 48. | J. Demel, S. Selberherr: "JANAP - ein Programm zur Simulation des Zeitverhaltens von nichtlinearen elektrischen Schaltungen"; Talk: Arbeitsgemeinschaft Simulation (ASIM), Wien; 25.09.1984 - 27.09.1984; in "Proceedings of the Conference Arbeitsgemeinschaft Simulation (ASIM)", (1984), ISBN: 978-3-540-13393-3, 149 - 153 doi:10.1007/978-3-642-69706-7_21. BibTeX |
| 47. | A. Franz, G. Franz, S. Selberherr: "Numerical 2-D Simulation of Vertical Power MOSFETs"; Talk: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in "Abstracts of the International Conference on Modelling and Simulation", (1984), 2, 29. BibTeX |
| 46. | A. Franz, G. Franz, S. Selberherr: "Numerical 2-D Simulation of Vertical Power MOSFETs"; Talk: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in "Proceedings of the International Conference on Modelling and Simulation", (1984), 2.1, 187 - 202. BibTeX |
| 45. | S. Selberherr, H. Pötzl: "Numerische Simulation von Halbleiterbauelementen"; Talk: Arbeitsgemeinschaft Simulation (ASIM), Wien; 25.09.1984 - 27.09.1984; in "Proceedings of the Conference Arbeitsgemeinschaft Simulation (ASIM)", (1984), ISBN: 978-3-540-13393-3, 154 - 158 doi:10.1007/978-3-642-69706-7_22. BibTeX |
| 44. | A. R. Baghai-Wadji, S. Selberherr, F. Seifert: "On the Calculation of Charge, Electrostatic Potential and Capacitance in Generalized SAW Structures"; Talk: Ultrasonics Symposium, Dallas; 14.11.1984 - 16.11.1984; in "Abstracts of the Ultrasonics Symposium", (1984), 44 - 48. BibTeX |
| 43. | S. Selberherr: "Process and Device Modeling for VLSI"; Talk: Yugoslav International Conference on Microelectronics (MIEL), Nis; (invited) 07.05.1984 - 09.05.1984; in "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1984), 1 - 45. BibTeX |
| 42. | W. Jüngling, P. Pichler, S. Selberherr, E. Guerrero, H. Pötzl: "Simulation of Critical IC-Fabrication Steps"; Talk: International Conference on Numerical Simulation of VLSI Devices, Boston; 12.11.1984 - 14.11.1984; in "Abstracts of the Numerical Simulation of VLSI Devices Conference", (1984), 7. BibTeX |
| 41. | J. Demel, S. Selberherr: "The Complete Tableau Approach to Simulate VLSI-Networks"; Talk: International Conference on Computer-Aided Design (ICCAD), Santa Clara; 12.11.1984 - 15.11.1984; in "Proceedings of the International Conference on Computer-Aided Design", (1984), ISBN: 0-8186-0607-x, 27 - 29. BibTeX |
| 40. | S. Selberherr, W. Griebel, H. Pötzl: "Transport Physics for Modeling Semiconductor Devices"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Swansea; (invited) 09.07.1984 - 12.07.1984; in "Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes", (1984), ISBN: 0-906674-38-7, 133 - 152. BibTeX |
| 39. | P. Pichler, W. Jüngling, S. Selberherr, H. Pötzl: "Two-Dimensional Coupled Diffusion Modeling"; Talk: European Solid-State Device Research Conference (ESSDERC), Lille; 10.09.1984 - 13.09.1984; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1984), ISBN: 0-444-86942-5, 187 - 191. BibTeX |
| 38. | P. Pichler, W. Jüngling, S. Selberherr, H. Pötzl: "Two-Dimensional Coupled Diffusion Modeling"; Talk: European Solid-State Device Research Conference (ESSDERC), Lille; 10.09.1984 - 13.09.1984; in "Abstracts of the European Solid-State Device Research Conference (ESSDERC)", (1984), 182 - 185. BibTeX |
| 37. | G. Franz, A. Franz, S. Selberherr, P. Markowich: "A Quasi Three Dimensional Semiconductor Device Simulation Using Cylindrical Coordinates"; Talk: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Galway; 15.06.1983 - 17.06.1983; in "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1983), ISBN: 0-906783-20-8, 122 - 127. BibTeX |
| 36. | W. Agler, P. Markowich, S. Selberherr: "A Singular Perturbation Analysis of Discretisation Methods for the Parabolic Semiconductor Device Equations"; Talk: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Galway; 15.06.1983 - 17.06.1983; in "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1983), ISBN: 0-906783-20-8, 85 - 90. BibTeX |
| 35. | P. Markowich, S. Selberherr: "A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments"; Talk: Segundas Jornadas LatinoAmericanas de Matematica Aplicada, Rio de Janeiro; 12.12.1983 - 16.12.1983; in "Abstracts Segundas Jornadas LatinoAmericanas de Matematica Aplicada", (1983), . BibTeX |
| 34. | E. Langer, S. Selberherr, P. Markowich, Ch. Ringhofer: "Ausbreitung elektroakustischer Wellen in Piezoelektrika"; Talk: Informationstagung Mikroelektronik (ME), Wien; 12.10.1983 - 14.10.1983; in "Bericht der Informationstagung Mikroelektronik", (1983), 144 - 148. BibTeX |
| 33. | F. Straker, S. Selberherr: "Computation of Integrated Circuit Interconnect Capacitances"; Talk: Yugoslav International Conference on Microelectronics (MIEL), Zagreb; 26.04.1983 - 28.04.1983; in "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1983), 31 - 39. BibTeX |
| 32. | S. Selberherr, Ch. Ringhofer: "Discretization Methods for the Semiconductor Equations"; Talk: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Galway; (invited) 15.06.1983 - 17.06.1983; in "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1983), ISBN: 0-906783-20-8, 31 - 45. BibTeX |
| 31. | S. Straker, S. Selberherr: "Kapazitätsberechnung bei VLSI-Strukturen"; Talk: Informationstagung Mikroelektronik (ME), Wien; 12.10.1983 - 14.10.1983; in "Bericht der Informationstagung Mikroelektronik", (1983), 77 - 83. BibTeX |
| 30. | S. Selberherr: "Modeling Static and Dynamic Behavior of Power Devices"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; (invited) 05.12.1983 - 07.12.1983; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (1983), IEEE Cat.No 83CH1973-7, 71 - 74 doi:10.1109/IEDM.1983.190443. BibTeX |
| 29. | E. Langer, S. Selberherr, P. Markowich, Ch. Ringhofer: "Numerical Analysis of Acoustic Wave Generation in Anisotropic Piezoelectric Materials"; Talk: International Conference on Solid State Transducers, Delft; 31.05.1983 - 03.06.1983; in "Abstracts of Solid State Transducers Conference 1983", (1983), 138 - 139. BibTeX |
| 28. | A. Franz, G. Franz, S. Selberherr, H. Pötzl: "Numerische Simulation von GaAs-Bauelementen"; Talk: Grundlagen und Technologie elektronischer Bauelemente, Grossarl; 23.03.1983 - 26.03.1983; in "Tagungsbericht Grundlagen und Technologie elektronischer Bauelemente", (1983), 50 - 54. BibTeX |
| 27. | W. Jüngling, E. Guerrero, S. Selberherr: "On Modeling the Intrinsic Number and Fermi Levels for Device and Process Simulation"; Talk: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Galway; 15.06.1983 - 17.06.1983; in "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1983), ISBN: 0-906783-20-8, 144 - 149. BibTeX |
| 26. | E. Langer, S. Selberherr, P. Markowich: "Surface and Bulk Wave Velocities in Arbitrary Anisotropic Piezoelectric Materials"; Talk: Ultrasonics Symposium, Atlanta; 31.10.1983 - 02.11.1983; in "Proceedings of the Ultrasonics Symposium", (1983), 1157 - 1160. BibTeX |
| 25. | A. Franz, G. Franz, S. Selberherr, P. Markowich: "The Influence of Various Mobility Models on the Iteration Process and Solution of the Basic Semiconductor Equations"; Talk: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Galway; 15.06.1983 - 17.06.1983; in "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1983), ISBN: 0-906783-20-8, 117 - 121. BibTeX |
| 24. | S. Selberherr, A. Schütz, H. Pötzl: "Two Dimensional MOS-Transistor Modeling"; Talk: VLSI Process and Device Modeling Summer Course, Heverlee; (invited) 07.06.1983 - 10.06.1983; in "Proceedings of VLSI Process and Device Modeling Summer Course 1983", (1983), 1 - 38. BibTeX |
| 23. | J. Machek, S. Selberherr: "A Novel Finite-Element Approach to Device Modeling"; Talk: International Conference on Numerical Simulation of VLSI Devices, Boston; 02.11.1982 - 04.11.1982; in "Abstracts of Numerical Simulation of VLSI Devices Conference", (1982), 9. BibTeX |
| 22. | Ch. Ringhofer, P. Markowich, S. Selberherr, M. Lentini: "A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Equations"; Talk: International Conference on Numerical Simulation of VLSI Devices, Boston; 02.11.1982 - 04.11.1982; in "Abstracts of Numerical Simulation of VLSI Devices Conference", (1982), 6. BibTeX |
| 21. | S. Selberherr, A. Schütz, H. Pötzl: "Design of Integrated Circuits: Device Modeling"; Talk: Yugoslav International Conference on Microelectronics (MIEL), Banja Luka; (invited) 14.04.1982 - 16.04.1982; in "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1982), 47 - 84. BibTeX |
| 20. | A. Franz, G. Franz, S. Selberherr, Ch. Ringhofer, P. Markowich: "Finite Boxes - A Generalization of the Finite Difference Method Utmost Suitable for Semiconductor Device Simulation"; Talk: International Conference on Numerical Simulation of VLSI Devices, Boston; 02.11.1982 - 04.11.1982; in "Abstracts of Numerical Simulation of VLSI Devices Conference", (1982), 3. BibTeX |
| 19. | E. Langer, S. Selberherr, Ch. Ringhofer, P. Markowich: "Numerical Analysis of Acoustic Wave Generation in Anisotropic Piezoelectric Materials"; Talk: Ultrasonics Symposium, San Diego; 27.10.1982 - 29.10.1982; in "Proceedings of the Ultrasonics Symposium", (1982), 350 - 353. BibTeX |
| 18. | S. Selberherr: "Some Comments on X3J3/S6.81 Chapter 3"; Talk: Meeting of the Fortran Experts Group, Wien; 14.06.1982 - 17.06.1982; in "Minutes of the Fortran Experts Group", (1982), X3J3/148, 109 - 110. BibTeX |
| 17. | S. Selberherr, A. Schütz, H. Pötzl: "Two Dimensional MOS-Transistor Modeling"; Talk: International Conference on Computer-Aided Design of IC Fabrication Processes, Stanford; (invited) 18.08.1982 - 19.08.1982; in "Proceedings of Computer-Aided Design of IC Fabrication Processes Conference", (1982), 1 - 20. BibTeX |
| 16. | S. Selberherr, A. Schütz, H. Pötzl: "Two Dimensional MOS-Transistor Modeling"; Talk: NATO-ASI-Workshop: Process and Device Simulation for MOS -VLSI Circuits, Urbino; (invited) 12.07.1982 - 23.07.1982; in "Proceedings of Process and Device Simulation for MOS-VLSI Circuits", (1982), 1 - 93. BibTeX |
| 15. | E. Langer, S. Selberherr, H. Mader: "A Consistent Analysis of Bulk-Barrier Diodes"; Talk: European Solid-State Device Research Conference (ESSDERC), Toulouse; 14.09.1981 - 17.09.1981; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1981), 141 - 142. BibTeX |
| 14. | E. Langer, S. Selberherr, H. Mader: "A Numerical Analysis of Bulk-Barrier Diodes"; Talk: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 15.06.1981 - 19.06.1981; in "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1981), ISBN: 0-906783-03-8, 218 - 222. BibTeX |
| 13. | A. Schütz, S. Selberherr, H. Pötzl: "Numerical Analysis of Breakdown Phenomena in MOSFETs"; Talk: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 15.06.1981 - 19.06.1981; in "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1981), ISBN: 0-906783-03-8, 270 - 274. BibTeX |
| 12. | E. Langer, S. Selberherr, H. Mader: "Numerische Analyse der Bulk-Barrier Diode"; Talk: Informationstagung Mikroelektronik (ME), Wien; 14.10.1981 - 16.10.1981; in "Bericht der Informationstagung Mikroelektronik (ME)", (1981), 63 - 67. BibTeX |
| 11. | E. Langer, S. Selberherr, H. Mader: "Numerische Analyse der Bulk-Barrier Diode"; Talk: Seminar Grundlagen und Technologie elektronischer Bauelemente, Grossarl; 01.04.1981 - 04.04.1981; in "Kursunterlagen Grundlagen und Technologie elektronischer Bauelemente", (1981), 87 - 93. BibTeX |
| 10. | A. Schütz, S. Selberherr, H. Pötzl: "Zweidimensionale Simulation des Lawinendurchbruchs in MOS Transistoren"; Talk: Informationstagung Mikroelektronik (ME), Wien; 14.10.1981 - 16.10.1981; in "Bericht der Informationstagung Mikroelektronik (ME)", (1981), 68 - 72. BibTeX |
| 9. | S. Selberherr, A. Schütz, H. Pötzl: "MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren"; Talk: Fortbildungsseminar Praxis der Großintegration, Dortmund; (invited) 27.05.1980 - 31.05.1980; in "Kursunterlagen Praxis der Großintegration", (1980), VA8, 1 - 44. BibTeX |
| 8. | H. Pötzl, S. Selberherr, A. Schütz: "MOS-Großintegration"; Talk: Winterschule Neuere Entwicklungen auf dem Gebiete der Halbleiterphysik, Mariapfarr; 25.02.1980 - 01.03.1980; in "Kursunterlagen Neuere Entwicklungen auf dem Gebiete der Halbleiterphysik", (1980), 5 - 6. BibTeX |
| 7. | S. Selberherr, A. Schütz, H. Pötzl: "The Sensitivity of Short Channel MOSFETs on Technological Tolerances"; Talk: European Solid-State Device Research Conference (ESSDERC), York; 15.09.1980 - 18.09.1980; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1980), 116 - 118. BibTeX |
| 6. | A. Schütz, S. Selberherr, H. Pötzl: "Two Dimensional Analysis of the Avalanche Effect in MOS Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), York; 15.09.1980 - 18.09.1980; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1980), 113 - 115. BibTeX |
| 5. | W. Fichtner, R. Losehand, E. Guerrero, S. Selberherr, H. Schultz: "Exact First Principles Modelling of Short-Channel VMOS Transistors"; Talk: International Conference on Computer Aided Design and Manufacture of Electronic Components, Circuits and Systems (CADMECCS), Brighton; 03.07.1979 - 06.07.1979; in "Proc.Intl.Conf.on Computer Aided Design and Manufacture of Electronic Components,Circuits and Systems", (1979), 28 - 30. BibTeX |
| 4. | S. Selberherr, W. Fichtner, H. Pötzl: "MINIMOS - a Program Package to Facilitate MOS Device Design and Analysis"; Talk: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 27.06.1979 - 29.06.1979; in "Abstr.Conf.on Numerical Analysis of Semiconductor Devices", (1979), 29. BibTeX |
| 3. | S. Selberherr, W. Fichtner, H. Pötzl: "MINIMOS - a Program Package to Facilitate MOS Device Design and Analysis"; Talk: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 27.06.1979 - 29.06.1979; in "Proceedings Conf.on Numerical Analysis of Semiconductor Devices", (1979), ISBN: 0-906783-00-3, 275 - 279. BibTeX |
| 2. | S. Selberherr, H. Pötzl: "Two Dimensional MOS-Transistor Modelling"; Talk: European Solid-State Device Research Conference (ESSDERC), München; 10.09.1979 - 14.09.1979; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1979), 133. BibTeX |
| 1. | S. Selberherr, H. Pötzl: "Zweidimensionale Modellierung von MOS-Transistoren"; Talk: Informationstagung Mikroelektronik (ME), Wien; 10.10.1979 - 13.10.1979; in "Bericht der Informationstagung Mikroelektronik (ME)", (1979), 52 - 57. BibTeX |