Papers in Journals

Publication list for members of
E360 - Institute for Microelectronics
as any persons named in the publication record

766 records

Publications in Scientific Journals

766.	M. Benam, M. Ballicchia, J. Weinbub, S. Selberherr, M. Nedjalkov: "A Computational Approach for Investigating Coulomb Interaction Using Wigner-Poisson Coupling"; Journal of Computational Electronics, 20, (2021), 775 - 784 doi:10.1007/s10825-020-01643-x. BibTeX
765.	W. Auzinger, H. Hofstätter, O. Koch, M. Quell: "Adaptive Time Propagation for Time-Dependent Schrödinger Equations"; International Journal of Applied and Computational Mathematics, 7, (2021), 6-1 - 6-14 doi:10.1007/s40819-020-00937-9. BibTeX
764.	A. Toifl, F. Rodrigues, L.F. Aguinsky, A. Hössinger, J. Weinbub: "Continuum Level-Set Model for Anisotropic Wet Etching of Patterned Sapphire Substrates"; Semiconductor Science and Technology, 36, (2021), 045016-1 - 045016-12 doi:10.1088/1361-6641/abe49b. BibTeX
763.	S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov: "Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions"; Solid-State Electronics, 186, (invited) (2021), 108103 doi:10.1016/j.sse.2021.108103. BibTeX
762.	J. Ender, S. Fiorentini, R. Orio, W. Goes, V. Sverdlov, S. Selberherr: "Emerging CMOS Compatible Magnetic Memories and Logic"; IEEE Journal of the Electron Devices Society, 9, (invited) (2021), 456 - 463 doi:10.1109/JEDS.2021.3066679. BibTeX
761.	N. Gupta, A. Shah, S. Khan, S. Vishvakarma, M. Waltl, P. Girard: "Error-Tolerant Reconfigurable VDD 10T SRAM Architecture for IoT Applications"; Electronics, 10, (2021), 1718-1 - 1718-16 doi:10.3390/electronics10141718. BibTeX
760.	X. Klemenschits, S. Selberherr, L. Filipovic: "Geometric Advection and Its Application in the Emulation of High Aspect Ratio Structures"; Computer Methods in Applied Mechanics and Engineering, 386, (2021), 114196-1 - 114196-22 doi:10.1016/j.cma.2021.114196. BibTeX
759.	Y. Hernandez, B. Stampfer, T. Grasser, M. Waltl: "Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies"; Crystals, 11, (2021), 1150-1 - 1150-9 doi:10.3390/cryst11091150. BibTeX
758.	A. Shah, M. Waltl: "Impact of Negative Bias Temperature Instability on Single Event Transients in Scaled Logic Circuits"; International Journal Of Numerical Modelling-Electronic Networks Devices And Fields, 34, (2021), e2854-1 - e2854-13 doi:10.1002/jnm.2854. BibTeX
757.	L. Filipovic, S. Selberherr: "Microstructure and Granularity Effects in Electromigration"; IEEE Journal of the Electron Devices Society, 9, (invited) (2021), 476 - 483 doi:10.1109/JEDS.2020.3044112. BibTeX
756.	L.F. Aguinsky, G. Wachter, P. Manstetten, F. Rodrigues, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub: "Modeling and Analysis of Sulfur Hexafluoride Plasma Etching for Silicon Microcavity Resonators"; Journal of Micromechanics and Microengineering, 31, (2021), 125003-1 - 125003-9 doi:10.1088/1361-6439/ac2bad. BibTeX
755.	R. Orio, J. Ender, S. Fiorentini, W. Gös, S. Selberherr, V. Sverdlov: "Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell"; IEEE Journal of the Electron Devices Society, 9, (2021), 61 - 67 doi:10.1109/JEDS.2020.3039544. BibTeX
754.	K. Tselios, D. Waldhör, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, T. Grasser, M. Waltl: "On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors"; IEEE Transactions on Device and Materials Reliability, 91, (invited) (2021), 199 - 206 doi:10.1109/TDMR.2021.3080983. BibTeX
753.	M. Feil, K. Puschkarsky, W. Gustin, H. Reisinger, T. Grasser: "On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET Devices"; IEEE Transactions on Electron Devices, 68, (2021), 236 - 243 doi:10.1109/TED.2020.3036321. BibTeX
752.	R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov: "Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning"; Micromachines, 12, (2021), 443 doi:10.3390/mi12040443. BibTeX
751.	M. Quell, V. Suvorov, A. Hössinger, J. Weinbub: "Parallel Velocity Extension for Level-Set-Based Material Flow on Hierarchical Meshes in Process TCAD"; IEEE Transactions on Electron Devices, 68, (2021), 5430 - 5437 doi:10.1109/TED.2021.3087451. BibTeX
750.	C. Schleich, D. Waldhör, K. Waschneck, M. Feil, H. Reisinger, T. Grasser, M. Waltl: "Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies"; IEEE Transactions on Electron Devices, 68, (2021), 4057 - 4063 doi:10.1109/TED.2021.3092295. BibTeX
749.	M. Jech, A.-M. El-Sayed, S. E. Tyaginov, D. Waldhör, F. Bouakline, P. Saalfrank, D. Jabs, C. Jungemann, M. Waltl, T. Grasser: "Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices"; Physical Review Applied, 16, (2021), 014026 -1 - 014026 -24 doi:10.1103/PhysRevApplied.16.014026. BibTeX
748.	J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov: "Reinforcement Learning Approach for Deterministic SOT-MRAM Switching"; Proceedings of SPIE, 11805, (invited) (2021), 1180519-1 - 1180519-8 doi:10.1117/12.2593937. BibTeX
747.	H. Ceric, S. Selberherr, H. Zahedmanesh, R. Orio, K. Croes: "Review - Modeling Methods for Analysis of Electromigration Degradation in Nano-Interconnects"; ECS Journal of Solid State Science and Technology, 10, (2021), 035003-1 - 035003-11 doi:10.1149/2162-8777/abe7a9. BibTeX
746.	M. Quell, G. Diamantopoulos, A. Hössinger, J. Weinbub: "Shared-Memory Block-Based Fast Marching Method for Hierarchical Meshes"; Journal of Computational and Applied Mathematics, 392, (2021), 113488-1 - 113488-15 doi:10.1016/j.cam.2021.113488. BibTeX
745.	V. Sverdlov, A.-M. El-Sayed, H. Seiler, H. Kosina, S. Selberherr: "Subbands in a Nanoribbon of Topologically Insulating MoS₂ in the 1T′ Phase"; Solid-State Electronics, 184, (invited) (2021), 108081-1 - 108081-9 doi:10.1016/j.sse.2021.108081. BibTeX
744.	S. Fatemeh, M. Moradinasab, U. Schwalke, L. Filipovic: "Superior Sensitivity and Optical Response of Blue Phosphorene and Its Doped Systems for Gas Sensing Applications"; ACS Omega, 6, (2021), 18770 - 18781 doi:10.1021/acsomega.1c01898. BibTeX
743.	T. Knobloch, Yu. Illarionov, F. Ducry, C. Schleich, S. Wachter, K. Watanabe, T. Taniguchi, T. Müller, M. Waltl, M. Lanza, M. I. Vexler, M. Luisier, T. Grasser: "The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials"; Nature Electronics, 4, (2021), 98 - 108 doi:10.1038/s41928-020-00529-x. BibTeX
742.	L. Filipovic: "Theoretical Examination of Thermo-Migration in Novel Platinum Microheaters"; Microelectronics Reliability, 123, (2021), 114219-1 - 114219-14 doi:10.1016/j.microrel.2021.114219. BibTeX
741.	D. Waldhör, C. Schleich, J. Michl, B. Stampfer, K. Tselios, E. Ioannidis, H. Enichlmair, M. Waltl, T. Grasser: "Toward Automated Defect Extraction From Bias Temperature Instability Measurements"; IEEE Transactions on Electron Devices, 68, (2021), 4057 - 4063 doi:10.1109/TED.2021.3091966. BibTeX
740.	R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov: "Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM Simulations"; Solid-State Electronics, 185, (invited) (2021), 108075 doi:10.1016/j.sse.2021.108075. BibTeX
739.	A. Saleh, H. Ceric, H. Zahedmanesh: "Void-Dynamics in Nano-Wires and the Role of Microstructure Investigated via a Multi-Scale Physics-Based Model"; Journal of Applied Physics, 129, (2021), 125102-1 - 125102-17 doi:10.1063/5.0039953. BibTeX
738.	G. Raut, A. Shah, V. Sharma, G. Rajput, S. Vishvakarma: "A 2.4-GS/s Power-Efficient, High-Resolution Reconfigurable Dynamic Comparator for ADC Architecture"; Circuits Systems and Signal Processing, 39, (2020), 4681 - 4694 doi:10.1007/s00034-020-01371-4. BibTeX
737.	S. Khan, A. Shah, S. Chouhan, N. Gupta, J. Pandey, S. Vishvakarma: "A Symmetric D Flip-Flop Based PUF with Improved Uniqueness"; Microelectronics Reliability, 106, (2020), 113595 doi:10.1016/j.microrel.2020.113595. BibTeX
736.	S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov: "Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM"; IEEE Journal of the Electron Devices Society, 8, (invited) (2020), 1249 - 1256 doi:10.1109/JEDS.2020.3023577. BibTeX
735.	V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr: "Ballistic Conductance in a Topological 1T '-MoS₂ Nanoribbon"; Semiconductors (Physics of Semiconductor Devices), 54, (invited) (2020), 1713 - 1715 doi:10.1134/S1063782620120386. BibTeX
734.	A. Shah, M. Waltl: "Bias Temperature Instability Aware and Soft Error Tolerant Radiation Hardened 10T SRAM"; Electronics, 9, (2020), 256-1 - 256-12 doi:10.3390/electronics9020256. BibTeX
733.	D.K. Ferry, M. Nedjalkov, J. Weinbub, M. Ballicchia, I. Welland, S. Selberherr: "Complex Systems in Phase Space"; Entropy, 22, (invited) (2020), 1103-1 - 1103-19 doi:10.3390/e22101103. BibTeX
732.	S. Fiorentini, J. Ender, M. Mohamedou, S. Selberherr, R. Orio, W. Goes, V. Sverdlov: "Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells"; Proceedings of SPIE, 11470, (invited) (2020), 50 - 56 doi:10.1117/12.2567480. BibTeX
731.	V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr: "Conductance in a Nanoribbon of Topologically Insulating MoS₂ in the 1T´ Phase"; IEEE Transactions on Electron Devices, 67, (2020), 4687 - 4690 doi:10.1109/TED.2020.3023921. BibTeX
730.	A. Makarov, Ph. Roussel, E. Bury, M. Vandemaele, A. Spessot, D. Linten, B. Kaczer, S. E. Tyaginov: "Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach"; Micromachines, 11, (2020), 675 doi:10.3390/mi11070657. BibTeX
729.	C. Wen, A. Banshchikov, Yu. Illarionov, W. Frammelsberger, T. Knobloch, F. Hui, N. S. Sokolov, T. Grasser, M. Lanza: "Dielectric Properties of Ultrathin CaF₂ Ionic Crystals"; Advanced Materials, 32, (2020), 2002525-1 - 2002525-6 doi:10.1002/adma.202002525. BibTeX
728.	B. Stampfer, M. Simicic, P. Weckx, A. Abbasi, B. Kaczer, T. Grasser, M. Waltl: "Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays"; IEEE Transactions on Device and Materials Reliability, 20, (invited) (2020), 251 - 257 doi:10.1109/TDMR.2020.2985109. BibTeX
727.	Yu. Illarionov, T. Knobloch, M. Jech, M. Lanza, D. Akinwande, M. I. Vexler, T. Müller, M. Lemme, G. Fiori, F. Schwierz, T. Grasser: "Insulators for 2D Nanoelectronics: The Gap to Bridge"; Nature Communications, 11, (2020), 3385 doi:10.1038/s41467-020-16640-8. BibTeX
726.	B. Ruch, G. Pobegen, T. Grasser: "Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge Pumping"; IEEE Transactions on Electron Devices, 67, (2020), 4092 - 4098 doi:10.1109/TED.2020.3018091. BibTeX
725.	M. Jech, G.A. Rott, H. Reisinger, S. Tyaginov, G. Rzepa, A. Grill, D. Jabs, C. Jungemann, M. Waltl, T. Grasser: "Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {V_G, V_D} Bias Space: Implications and Peculiarities"; IEEE Transactions on Electron Devices, 67, (2020), 3315 - 3322 doi:10.1109/TED.2020.3000749. BibTeX
724.	Yu. Illarionov, T. Knobloch, T. Grasser: "Native High-k Oxides for 2D Transistors"; Nature Electronics, 3, (2020), 442 - 443 doi:10.1038/s41928-020-0464-2. BibTeX
723.	A. Hartwig, E. Boman, R. Falgout, P. Ghysels, M. Heroux, X. Li, L. McInnes, R. Mills, S. Rajamanickam, K. Rupp, B. Smith, I. Yamazaki, U. Meier Yang: "Preparing Sparse Solvers for Exascale Computing"; Philosophical Transactions of The Royal Society A, 378, (invited) (2020), 20190053-1 - 20190053-14 doi:10.1098/rsta.2019.0053. BibTeX
722.	M. Waltl: "Reliability of Miniaturized Transistors from the Perspective of Single-Defects"; Micromachines, 11, (invited) (2020), 736-1 - 736-21 doi:10.3390/mi11080736. BibTeX
721.	R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov: "Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAM"; Solid-State Electronics, 168, (2020), 107730-1 - 107730-7 doi:10.1016/j.sse.2019.107730. BibTeX
720.	B. Stampfer, F. Schanovski, T. Grasser, M. Waltl: "Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors"; Micromachines, 11, (invited) (2020), 446-1 - 446-11 doi:10.3390/mi11040446. BibTeX
719.	M. Waltl, B. Stampfer, G. Rzepa, B. Kaczer, T. Grasser: "Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS Transistors"; Microelectronics Reliability, 114, (2020), 113746-1 - 113746-5 doi:10.1016/j.microrel.2020.113746. BibTeX
718.	A. Shah, D. Rossi, V. Sharma, S. Vishvakarma, M. Waltl: "Soft Error Hardening Enhancement Analysis of NBTI Tolerant Schmitt Trigger Circuit"; Microelectronics Reliability, 107, (2020), 113617 doi:10.1016/j.microrel.2020.113617. BibTeX
717.	M. Feil, A. Huerner, K. Puschkarsky, C. Schleich, T. Eichinger, W. Gustin, H. Reisinger, T. Grasser: "The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters"; Crystals, 10, (invited) (2020), 1143-1 - 1143-14 doi:10.3390/cryst10121143. BibTeX
716.	A. Toifl, M. Quell, X. Klemenschits, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub: "The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy"; IEEE Access, 8, (2020), 115406 - 115422 doi:10.1109/ACCESS.2020.3004136. BibTeX
715.	J. Berens, G. Pobegen, T. Grasser: "Tunneling Effects in NH₃ Annealed 4H-SiC Trench MOSFETs"; Materials Science Forum, 1004, (2020), 652 - 658 doi:10.4028/www.scientific.net/MSF.1004.652. BibTeX
714.	R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov: "Two-Pulse Magnetic Field-Free Switching Scheme for Perpendicular SOT-MRAM with a Symmetric Square Free Layer"; Physica B: Condensed Matter, 578, (2020), 411743 doi:10.1016/j.physb.2019.411743. BibTeX
713.	M. Waltl: "Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS Transistors"; IEEE Transactions on Device and Materials Reliability, 20, (invited) (2020), 242 - 250 doi:10.1109/TDMR.2020.2988650. BibTeX
712.	L. Filipovic: "A Method for Simulating the Influence of Grain Boundaries and Material Interfaces on Electromigration"; Microelectronics Reliability, 97, (2019), 38 - 52 doi:10.1016/j.microrel.2019.04.005. BibTeX
711.	G. Diamantopoulos, A. Hössinger, S. Selberherr, J. Weinbub: "A Shared Memory Parallel Multi-Mesh Fast Marching Method for Re-Distancing"; Advances in Computational Mathematics, 45, (2019), 2029 - 2045 doi:10.1007/s10444-019-09683-z. BibTeX
710.	M. Jech, A.-M. El-Sayed, S. E. Tyaginov, A. Shluger, T. Grasser: "Ab Initio Treatment of Silicon-Hydrogen Bond Rupture at Si/SiO₂ Interfaces"; Physical Review B, 100, (2019), 195302 doi:10.1103/PhysRevB.100.195302. BibTeX
709.	F. Safari, M. Moradinasab, M. Fathipour, H. Kosina: "Adsorption of the NH3, NO, NO2, CO2, and CO Gas Molecules on Blue Phosphorene: A First-Principles Study"; Applied Surface Science, 464, (2019), 153 - 161 doi:10.1016/j.apsusc.2018.09.048. BibTeX
708.	K. Puschkarsky, H. Reisinger, G.A. Rott, C. Schluender, W. Gustin, T. Grasser: "An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps"; IEEE Transactions on Electron Devices, 66, (2019), 4623 - 4630 doi:10.1109/TED.2019.2941889. BibTeX
707.	P. Sanvale, N. Gupta, V. Neema, A. Shah, S. Vishvakarma: "An Improved Read-Assist Energy Efficient Single Ended P-P-N Based 10T SRAM Cell for Wireless Sensor Networ"; Microelectronics Journal, 92, (2019), 104611 doi:10.1016/j.mejo.2019.104611. BibTeX
706.	S. Khan, A. Shah, N. Gupta, S. Chouhan, J. Pandey, S. Vishvakarma: "An Ultra-Low Power, Reconfigurable, Aging Resilient RO PUF for IoT Applications"; Microelectronics Journal, 92, (2019), 104605 doi:10.1016/j.mejo.2019.104605. BibTeX
705.	H. Ceric, H. Zahedmanesh, K. Croes: "Analysis of Electromigration Failure of Nano-Interconnects through a Combination of Modeling and Experimental Methods"; Microelectronics Reliability, 100-101, (2019), 113362 doi:10.1016/j.microrel.2019.06.054. BibTeX
704.	A. Makarov, B. Kaczer, A. Chasin, M. Vandemaele, E. Bury, M. Jech, A. Grill, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov: "Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach"; IEEE Electron Device Letters, 40, (2019), 1579 - 1582 doi:10.1109/LED.2019.2933729. BibTeX
703.	R. Bernhard, G. Pobegen, M. Rösch, R. Vytla, T. Grasser: "Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETs"; IEEE Transactions on Device and Materials Reliability, 19, (2019), 133 - 139 doi:10.1109/TDMR.2019.2891794. BibTeX
702.	J. Berens, G. Pobegen, T. Eichinger, G. Rescher, T. Grasser: "Cryogenic Characterization of NH₃ Post Oxidation Annealed 4H-SiC Trench MOSFETs"; Materials Science Forum, 963, (2019), 175 - 179 doi:10.4028/www.scientific.net/MSF.963.175. BibTeX
701.	V. Sverdlov, S. Selberherr: "Current and Shot Noise at Spin-Dependent Hopping through Junctions with Ferromagnetic Contacts"; Solid-State Electronics, 159, (2019), 43 - 50 doi:10.1016/j.sse.2019.03.053. BibTeX
700.	J. Ghosh, D. Osintsev, V. Sverdlov: "Efficient Two-Level Parallelization Approach to Evaluate Spin Relaxation in a Strained Thin Silicon fFilm"; Journal of Computational Electronics, 18, (2019), 28 - 36 doi:10.1007/s10825-018-1274-x. BibTeX
699.	A. Grill, B. Stampfer, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, M. Waltl, T. Grasser: "Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs"; Solid-State Electronics, 19, (2019), 41 - 47 doi:10.1016/j.sse.2019.02.004. BibTeX
698.	X. Jing, Yu. Illarionov, E. Yalon, P. Zhou, T. Grasser, Y. Shi, M. Lanza: "Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects"; Advanced Functional Materials, 30, (2019), 1901971 doi:10.1002/adfm.201901971. BibTeX
697.	B. Ullmann, K. Puschkarsky, M. Waltl, H. Reisinger, T. Grasser: "Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques"; IEEE Transactions on Device and Materials Reliability, 19, (2019), 358 - 362 doi:10.1109/TDMR.2019.2909993. BibTeX
696.	N. Oliva, Yu. Illarionov, E. Casu, M. Cavalieri, T. Knobloch, T. Grasser, A. Ionescu: "Hysteresis Dynamics in Double-Gated n-Type WSe₂ FETs With High-k Top Gate Dielectric"; IEEE Journal of the Electron Devices Society, 7, (2019), 1163 - 1169 doi:10.1109/JEDS.2019.2933745. BibTeX
695.	B. Ullmann, M. Jech, K. Puschkarsky, G.A. Rott, M. Waltl, Yu. Illarionov, H. Reisinger, T. Grasser: "Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental"; IEEE Transactions on Electron Devices, 66, (2019), 232 - 240 doi:10.1109/TED.2018.2873419. BibTeX
694.	M. Jech, B. Ullmann, G. Rzepa, S. E. Tyaginov, A. Grill, M. Waltl, D. Jabs, C. Jungemann, T. Grasser: "Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory"; IEEE Transactions on Electron Devices, 66, (2019), 241 - 248 doi:10.1109/TED.2018.2873421. BibTeX
693.	Z. Wu, J. Franco, A. Vandooren, B. Kaczer, Ph. Roussel, G. Rzepa, T. Grasser: "Improved PBTI Reliability in Junction-Less FET Fabricated at Low Thermal Budget for 3-D Sequential Integration"; IEEE Transactions on Device and Materials Reliability, 9, (2019), 262 - 267 doi:10.1109/TDMR.2019.2906843. BibTeX
692.	A. Lahlalia, O. Le Neel, R. Shankar, S. Selberherr, L. Filipovic: "Improved Sensing Capability of Integrated Semiconducting Metal Oxide Gas Sensor Devices"; Sensors, 19, (2019), 374-1 - 374-14 doi:10.3390/s19020374. BibTeX
691.	M. Ballicchia, D.K. Ferry, M. Nedjalkov, J. Weinbub: "Investigating Quantum Coherence by Negative Excursions of the Wigner Quasi-Distribution"; Applied Sciences, 9, (invited) (2019), 1344-1 - 1344-10 doi:10.3390/app9071344. BibTeX
690.	R. Orio, S. Selberherr, V. Sverdlov: "Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques"; Proceedings of SPIE, 11090, (invited) (2019), 110903F-1 - 110903F-6 doi:10.1117/12.2529119. BibTeX
689.	C. Medina-Bailon, T. Sadi, M. Nedjalkov, H. Carillo-Nunez, J. Lee, O. Badami, V. Georgiev, S. Selberherr, A. Asenov: "Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism"; IEEE Electron Device Letters, 40, (2019), 1571 - 1574 doi:10.1109/LED.2019.2934349. BibTeX
688.	K. Giering, K. Puschkarsky, H. Reisinger, G. Rzepa, G.A. Rott, R. Vollertsen, T. Grasser, R. Jancke: "NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling"; IEEE Transactions on Electron Devices, 66, (2019), 1662 - 1668 doi:10.1109/TED.2019.2901907. BibTeX
687.	J. Berens, G. Pobegen, G. Rescher, T. Aichinger, T. Grasser: "NH₃ and NO + NH₃ Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability"; IEEE Transactions on Electron Devices, 66, (2019), 4692 - 4697 doi:10.1109/TED.2019.2941723. BibTeX
686.	J. Franco, Z. Wu, G. Rzepa, L. Ragnarsson, H. Dekkers, A. Vandooren, G Groeseneken, N. Horiguchi, N. Collaert, D. Linten, T. Grasser, B. Kaczer: "On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTI"; IEEE Transactions on Device and Materials Reliability, 19, (2019), 268 - 274 doi:10.1109/TDMR.2019.2913258. BibTeX
685.	S. Foster, M. Thesberg, N. Neophytou: "Quantum Transport Simulations for the Thermoelectric Power Factor in 2D Nanocomposites"; Materials Today: Proceedings, 8, (2019), 690 - 695 doi:10.1016/j.matpr.2019.02.069. BibTeX
684.	Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, M. I. Vexler, M. Waltl, M. Lanza, N. S. Sokolov, A. Müller, T. Grasser: "Reliability of Scalable MoS2 FETs With 2 nm Crystalline CaF2 Insulators"; 2D Materials, 6, (2019), 045004 doi:10.1088/2053-1583/ab28f2. BibTeX
683.	K. Puschkarsky, T. Grasser, T. Aichinger, W. Gustin, H. Reisinger: "Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability"; IEEE Transactions on Electron Devices, 66, (invited) (2019), 4604 - 4616 doi:10.1109/TED.2019.2938262. BibTeX
682.	A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, T. Grasser, J. Weinbub: "Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics"; IEEE Transactions on Electron Devices, 66, (2019), 3060 - 3065 doi:10.1109/TED.2019.2916929. BibTeX
681.	T. Sadi, C. Medina-Bailon, M. Nedjalkov, J. Lee, O. Badami, S. Berrada, H. Carillo-Nunez, V. Georgiev, S. Selberherr, A. Asenov: "Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors"; Materials, 12, (2019), 124-1 - 124-11 doi:10.3390/ma12010124. BibTeX
680.	A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov: "Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs"; IEEE Electron Device Letters, 40, (2019), 870 - 873 doi:10.1109/LED.2019.2913625. BibTeX
679.	J. Woerle, V. Simonka, E. Müller, A. Hössinger, H. Sigg, S. Selberherr, J. Weinbub, M. Camarda, U. Grossner: "Surface Morphology of 4H-SiC After Thermal Oxidation"; Materials Science Forum, 963, (2019), 180 - 183 doi:10.4028/www.scientific.net/MSF.963.180. BibTeX
678.	V. Vargiamidis, M. Thesberg, N. Neophytou: "Theoretical Model for the Seebeck Coefficient in Superlattice Materials with Energy Relaxation"; Journal of Applied Physics, 126, (2019), 055105 doi:10.1063/1.5108607. BibTeX
677.	L. Filipovic, S. Selberherr: "Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors"; Materials, 12, (invited) (2019), 2410-1 - 2410-37 doi:10.3390/ma12152410. BibTeX
676.	M. Kittler, M. Reiche, B. Schwartz, H. Uebensee, H. Kosina, Z. Stanojevic, O. Baumgartner, T. Ortlepp: "Transport of Charge Carriers along Dislocations in Si and Ge"; Physica Status Solidi A, 216, (2019), 1900287 doi:10.1002/pssa.201900287. BibTeX
675.	A. Banshchikov, Yu. Illarionov, M. I. Vexler, S. Wachter, N. S. Sokolov: "Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer"; Semiconductors (Physics of Semiconductor Devices), 53, (2019), 833 - 837 doi:10.1134/S1063782619060034. BibTeX
674.	V. Sverdlov, A. Makarov, S. Selberherr: "Two-Pulse Sub-ns Switching Scheme for Advanced Spin-Orbit Torque MRAM"; Solid-State Electronics, 155, (2019), 49 - 56 doi:10.1016/j.sse.2019.03.010. BibTeX
673.	Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, L. Mennel, M. Paur, M. Stöger-Pollach, A. Steiger-Thirsfeld, M. I. Vexler, M. Waltl, N. S. Sokolov, T. Müller, T. Grasser: "Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors"; Nature Electronics, 2, (2019), 230 - 235 doi:10.1038/s41928-019-0256-8. BibTeX
672.	M. Nedjalkov, J. Weinbub, M. Ballicchia, S. Selberherr, I. Dimov, D.K. Ferry: "Wigner Equation for General Electromagnetic Fields: The Weyl-Stratonovich Transform"; Physical Review B, 99, (2019), 014423-1 - 014423-16 doi:10.1103/PhysRevB.99.014423. BibTeX
671.	B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, V. Putcha, E. Bury, M. Simicic, A. Chasin, D. Linten, B. Parvais, F. Catthoor, G. Rzepa, M. Waltl, T. Grasser: "A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent Variability"; Microelectronics Reliability, 81, (invited) (2018), 186 - 194 doi:10.1016/j.microrel.2017.11.022. BibTeX
670.	T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovski, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser: "A Physical Model for the Hysteresis in MoS2 Transistors"; IEEE Journal of the Electron Devices Society, 6, (2018), 972 - 978 doi:10.1109/JEDS.2018.2829933. BibTeX
669.	L. Gnam, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub: "Accelerating Flux Calculations Using Sparse Sampling"; Micromachines, 9, (invited) (2018), 1 - 17 doi:10.3390/mi9110550. BibTeX
668.	A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser: "Analysis of the Features of Hot-Carrier Degradation in FinFETs"; Semiconductors (Physics of Semiconductor Devices), 52, (2018), 1177 - 1182 doi:10.1134/S1063782618100081. BibTeX
667.	B. Stampfer, F. Zhang, Yu. Illarionov, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser: "Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors"; ACS Nano, 12, (2018), 5368 - 5375 doi:10.1021/acsnano.8b00268. BibTeX
666.	G. Rzepa, J. Franco, B.J. O´Sullivan, A. Subirats, M. Simicic, G. Hellings, P. Weckx, M. Jech, T. Knobloch, M. Waltl, P. Roussel, D. Linten, B. Kaczer, T. Grasser: "Comphy -- A Compact-Physics Framework for Unified Modeling of BTI"; Microelectronics Reliability, 85, (invited) (2018), 49 - 65 doi:10.1016/j.microrel.2018.04.002. BibTeX
665.	G. Rescher, G. Pobegen, T. Aichinger, T. Grasser: "Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning"; Materials Science Forum, 924, (2018), 671 - 675 doi:10.4028/www.scientific.net/MSF.924.671. BibTeX
664.	J. Stathis, S. Mahapatra, T. Grasser: "Controversial Issues in Negative Bias Temperature Instability"; Microelectronics Reliability, 81, (2018), 244 - 251 doi:10.1016/j.microrel.2017.12.035. BibTeX
663.	V. Sverdlov, S. Selberherr: "Demands For Spin-based Nonvolatility In Emerging Digital Logic And Memory Devices For Low Power Computing"; Facta universitatis - series: Electronics and Energetics, 31, (invited) (2018), 529 - 545 doi:10.2298/FUEE1804529S. BibTeX
662.	A.-M. El-Sayed, M. Watkins, T. Grasser, A. Shluger: "Effect of Electric Field on Migration of Defects in Oxides: Vacancies and Interstitials in Bulk MgO"; Physical Review B, 98, (2018), 064102 doi:10.1103/PhysRevB.98.064102. BibTeX
661.	A. Lahlalia, O. Le Neel, R. Shankar, S.-Y. Kam, L. Filipovic: "Electro-Thermal Simulation & Characterization of a Microheater for SMO Gas Sensors"; Journal Of Microelectromechanical Systems, 27, (2018), 529 - 537 doi:10.1109/JMEMS.2018.2822942. BibTeX
660.	M. Ballicchia, J. Weinbub, M. Nedjalkov: "Electron Evolution Around a Repulsive Dopant in a Quantum Wire: Coherence Effects"; Nanoscale, 10, (2018), 23037 - 23049 doi:10.1039/C8NR06933F. BibTeX
659.	J. Weinbub, M. Ballicchia, M. Nedjalkov: "Electron Interference in a Double-Dopant Potential Structure"; Physica Status Solidi - Rapid Research Letters, 12, (2018), 1800111-1 - 1800111-4 doi:10.1002/pssr.201800111. BibTeX
658.	V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide"; IEEE Transactions on Electron Devices, 65, (2018), 674 - 679 doi:10.1109/TED.2017.2786086. BibTeX
657.	W. Gös, Y. Wimmer, A.-M. El-Sayed, G. Rzepa, M. Jech, A. Shluger, T. Grasser: "Identification of Oxide Defects in Semiconductor Devices: A Systematic Approach Linking DFT to Rate Equations and Experimental Evidence"; Microelectronics Reliability, 87, (2018), 286 - 320 doi:10.1016/j.microrel.2017.12.021. BibTeX
656.	S. E. Tyaginov, A. Makarov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser: "Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs"; Semiconductors (Physics of Semiconductor Devices), 52, (2018), 1738 - 1742 doi:10.1134/S1063782618130183. BibTeX
655.	J. Strand, K. Moloud, A.-M. El-Sayed, V. Afanas´Ev, A. Shluger: "Intrinsic Charge Trapping in Amorphous Oxide Films: Status and Challenges"; Journal of Physics: Condensed Matter, 30, (2018), 233001 doi:10.1088/1361-648X/aac005. BibTeX
654.	V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide"; Materials Science Forum, 924, (2018), 192 - 195 doi:10.4028/www.scientific.net/MSF.924.192. BibTeX
653.	A. Lahlalia, L. Filipovic, S. Selberherr: "Modeling and Simulation of Novel Semiconducting Metal Oxide Gas Sensors for Wearable Devices"; IEEE Sensors Journal, 18, (2018), 1960 - 1970 doi:10.1109/JSEN.2018.2790001. BibTeX
652.	X. Klemenschits, S. Selberherr, L. Filipovic: "Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review"; Micromachines, 9, (invited) (2018), 631-1 - 631-31 doi:10.3390/mi9120631. BibTeX
651.	Yu. Illarionov, A. Banshchikov, N. S. Sokolov, S. Wachter, M. I. Vexler: "Nonmonotonic Change in the Tunnel Conductivity of an MIS Structure with a Two-Layer Insulator with an Increase in Its Thickness (by the Example of the Metal/SiO2/CaF2/Si System)"; Technical Physics Letters, 44, (2018), 1188 - 1191 doi:10.1134/S1063785018120441. BibTeX
650.	S. E. Tyaginov, A. Makarov, M. Jech, M. I. Vexler, J. Franco, B. Kaczer, T. Grasser: "Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor Structures"; Semiconductors (Physics of Semiconductor Devices), 52, (2018), 242 - 247 doi:10.1134/S1063782618020203. BibTeX
649.	G. Rescher, G. Pobegen, T. Aichinger, T. Grasser: "Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique"; IEEE Transactions on Electron Devices, 25, (2018), 1419 - 1426 doi:10.1109/TED.2018.2803283. BibTeX
648.	J. Weinbub, D.K. Ferry: "Recent Advances in Wigner Function Approaches"; Applied Physics Reviews, 5, (invited) (2018), 041104-1 - 041104-24 doi:10.1063/1.5046663. BibTeX
647.	V. Sverdlov, A. Makarov, S. Selberherr: "Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell without External Magnetic Field"; Journal on Systemics, Cybernetics and Informatics, 16, (invited) (2018), 55 - 59. BibTeX
646.	L. Filipovic, A. Lahlalia: "Review-System-on-Chip SMO Gas Sensor Integration in Advanced CMOS Technology"; Journal of the Electrochemical Society, 165, (2018), 862 - 879 doi:10.1149/2.0731816jes. BibTeX
645.	G. Meller, S. Selberherr: "Simulation of Injection Currents into Disordered Molecular Conductors"; Materials Today: Proceedings, 5, (2018), 17472 - 17477 doi:10.1016/j.matpr.2018.06.051. BibTeX
644.	V. Sverdlov, S. Selberherr: "Spin Correlations at Hopping in Magnetic Structures: From Tunneling Magnetoresistance to Single-Spin Transistor"; Proceedings of SPIE, 10732, (invited) (2018), 1073235-1 - 1073235-8 doi:10.1117/12.2319271. BibTeX
643.	M. Nedjalkov, P. Ellinghaus, J. Weinbub, T. Sadi, A. Asenov, I. Dimov, S. Selberherr: "Stochastic Analysis of Surface Roughness Models in Quantum Wires"; Computer Physics Communications, 228, (2018), 30 - 37 doi:10.1016/j.cpc.2018.03.010. BibTeX
642.	M. Kampl, H. Kosina: "The Backward Monte Carlo Method for Semiconductor Device Simulation"; Journal of Computational Electronics, 17, (2018), 1492 - 1504 doi:10.1007/s10825-018-1225-6. BibTeX
641.	V. Simonka, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub: "Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide"; Journal of Applied Physics, 123, (2018), 235701-1 - 235701-7 doi:10.1063/1.5031185. BibTeX
640.	K. Puschkarsky, H. Reisinger, T. Aichinger, W. Gustin, T. Grasser: "Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation"; IEEE Transactions on Device and Materials Reliability, 18, (2018), 144 - 153 doi:10.1109/TDMR.2018.2813063. BibTeX
639.	K. Puschkarsky, H. Reisinger, W. Gustin, T. Grasser: "Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time Extrapolation"; IEEE Transactions on Electron Devices, 65, (2018), 4764 - 4771 doi:10.1109/TED.2018.2870170. BibTeX
638.	P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr: "Analysis of Lense-Governed Wigner Signed Particle Quantum Dynamics"; Physica Status Solidi - Rapid Research Letters, 11, (2017), 1700102-1 - 1700102-5 doi:10.1002/pssr.201700102. BibTeX
637.	V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr: "Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation"; Solid-State Electronics, 128, (invited) (2017), 135 - 140 doi:10.1016/j.sse.2016.10.032. BibTeX
636.	E. Brinciotti, G. Badino, M. Knaipp, G. Gramse, J. Smoliner, F. Kienberger: "Calibrated Nanoscale Dopant Profiling and Capacitance of a High-Voltage Lateral MOS Transistor at 20 GHz Using Scanning Microwave Microscopy"; IEEE Transactions on Nanotechnology, 16, (2017), 245 - 252 doi:10.1109/TNANO.2017.2657888. BibTeX
635.	R. Stradiotto, G. Pobegen, C. Ostermaier, M. Waltl, A. Grill, T. Grasser: "Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs"; IEEE Transactions on Electron Devices, 64, (2017), 1045 - 1052 doi:10.1109/TED.2017.2655367. BibTeX
634.	C. Ostermaier, P. Lagger, G. Prechtl, A. Grill, T. Grasser, D. Pogany: "Dynamics of Carrier Transport via AlGaN Barrier in AlGaN/GaN MIS-HEMTs"; Applied Physics Letters, 110, (2017), 1 - 4 doi:10.1063/1.4982231. BibTeX
633.	Yu. Illarionov, T. Knobloch, M. Waltl, G. Rzepa, A. Pospischil, D.K Polyushkin, M. M. Furchi, T. Müller, T. Grasser: "Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors"; 2D Materials, 4, (2017), 025108-1 - 025108-10 doi:10.1088/2053-1583/aa734a. BibTeX
632.	P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr: "Framework to Model Neutral Particle Flux in Convex High Aspect Ratio Structures using One-Dimensional Radiosity"; Solid-State Electronics, 128, (invited) (2017), 141 - 147 doi:10.1016/j.sse.2016.10.029. BibTeX
631.	Yu. Illarionov, M. Waltl, G. Rzepa, T. Knobloch, J. Kim, D. Akinwande, T. Grasser: "Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps"; npj 2D Materials and Applications, 1, (2017), 23-1 - 23-7 doi:10.1038/s41699-017-0025-3. BibTeX
630.	P. Sharma, S. E. Tyaginov, S. E. Rauch, J. Franco, A. Makarov, M. I. Vexler, B. Kaczer, T. Grasser: "Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach"; IEEE Electron Device Letters, 38, (2017), 160 - 163 doi:10.1109/LED.2016.2645901. BibTeX
629.	Yu. Illarionov, K. Smithe, M. Waltl, T. Knobloch, E. Pop, T. Grasser: "Improved Hysteresis and Reliability of MoS₂ Transistors With High-Quality CVD Growth and Al₂O₃ Encapsulation"; IEEE Electron Device Letters, 38, (2017), 1763 - 1766 doi:10.1109/LED.2017.2768602. BibTeX
628.	G. Rescher, G. Pobegen, T. Aichinger, T. Grasser: "Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique"; Materials Science Forum, 897, (2017), 143 - 146 doi:10.4028/www.scientific.net/MSF.897.143. BibTeX
627.	B. Kaczer, J. Franco, S. E. Tyaginov, M. Jech, G. Rzepa, T. Grasser, B.J. O´Sullivan, R. Ritzenhaler, T. Schram, A. Spessot, D. Linten, N. Horiguchi: "Mapping of CMOS FET Degradation in Bias Space--Application to Dram Peripheral Devices"; Journal of Vacuum Science & Technology B, 35, (2017), 01A109-1 - 01A109-6 doi:10.1116/1.4972872. BibTeX
626.	M. Thesberg, H. Kosina, N. Neophytou: "On the Lorenz Number of Multiband Materials"; Physical Review B, 95, (2017), 125206-1 - 125206-14 doi:10.1063/1.4972192. BibTeX
625.	X. Song, F. Hui, T. Knobloch, B. Wang, Z. Fan, T. Grasser, X. Jing, Y. Shi, M. Lanza: "Piezoelectricity in Two Dimensions: Graphene vs. Molybdenum Disulfide"; Applied Physics Letters, 111, (2017), 083107-1 - 083107-4 doi:10.1063/1.5000496. BibTeX
624.	M. Vexler, Yu. Illarionov, I. Grekhov: "Quantum-Well Charge and Voltage Distribution in a Metal-Insulator-Semiconductor Structure upon Resonant Electron Tunneling"; Semiconductors (Physics of Semiconductor Devices), 51, (2017), 444 - 448 doi:10.1134/S1063782617040224. BibTeX
623.	V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation"; Journal of Physical Chemistry A, 121, (2017), 8791 - 8798 doi:10.1021/acs.jpca.7b08983. BibTeX
622.	V. Sverdlov, J. Weinbub, S. Selberherr: "Spintronics as a Non-Volatile Complement to Modern Microelectronics"; Informacije Midem - Journal of Microelectronics Electronic Components and Materials, 47, (invited) (2017), 195 - 210. BibTeX
621.	M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser: "Superior NBTI in High-k SiGe Transistors - Part I: Experimental"; IEEE Transactions on Electron Devices, 64, (2017), 2092 - 2098 doi:10.1109/TED.2017.2686086. BibTeX
620.	M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser: "Superior NBTI in High-k SiGe Transistors - Part II: Theory"; IEEE Transactions on Electron Devices, 64, (2017), 2099 - 2105 doi:10.1109/TED.2017.2686454. BibTeX
619.	S. Foster, M. Thesberg, N. Neophytou: "Thermoelectric Power Factor of Nanocomposite Materials from Two-Dimensional Quantum Transport Simulations"; Physical Review B, 96, (2017), 195425-1 - 195425-12 doi:10.1103/PhysRevB.96.195425. BibTeX
618.	B. Ullmann, T. Grasser: "Transformation: Nanotechnology - Challenges in Transistor Design and Future Technologies"; E&I Elektrotechnik und Informationstechnik, 134, (2017), 349 - 354 doi:10.1007/s00502-017-0534-y. BibTeX
617.	P. Manstetten, J. Weinbub, A. Hössinger, S. Selberherr: "Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces"; Procedia Computer Science, 108, (2017), 245 - 254 doi:10.1016/j.procs.2017.05.067. BibTeX
616.	K. Rupp, C. Jungemann, S.-M Hong, M. Bina, T. Grasser, A. Jüngel: "A Review of Recent Advances in the Spherical Harmonics Expansion Method for Semiconductor Device Simulation"; Journal of Computational Electronics, 15, (2016), 939 - 958 doi:10.1007/s10825-016-0828-z. BibTeX
615.	N.S. Azar, M. Pourfath: "Aggregation Kinetics and Stability Mechanisms of Pristine and Oxidized Nanocarbons in Polar Solvents"; The Journal of Physical Chemistry C, 120, (2016), 16804 - 16814 doi:10.1021/acs.jpcc.6b05318. BibTeX
614.	Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser: "Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors"; Japanese Journal of Applied Physics, 55, (2016), 04EP03 doi:10.7567/JJAP.55.04EP03. BibTeX
613.	A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr: "CMOS-Compatible Spintronic Devices: A Review"; Semiconductor Science and Technology, 31, (invited) (2016), 113006-1 - 113006-25 doi:10.1088/0268-1242/31/11/113006. BibTeX
612.	R. Stradiotto, G. Pobegen, C. Ostermaier, T. Grasser: "Characterization of Charge Trapping Phenomena at III-N/Dielectric Interfaces"; Solid-State Electronics, 125, (2016), 142 - 153 doi:10.1016/j.sse.2016.07.017. BibTeX
611.	J. Weinbub, A. Hössinger: "Comparison of the Parallel Fast Marching Method, the Fast Iterative Method, and the Parallel Semi-Ordered Fast Iterative Method"; Procedia Computer Science, 80, (2016), 2271 - 2275 doi:10.1016/j.procs.2016.05.408. BibTeX
610.	M. Reiche, M. Kittler, E. Pippel, H. Kosina, A. Lugstein, H. Uebensee: "Electronic Properties of Dislocations"; Solid State Phenomena, 242, (2016), 141 - 146 doi:10.4028/www.scientific.net/SSP.242.141. BibTeX
609.	J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress"; Journal of Nano Research, 39, (2016), 34 - 42 doi:10.4028/www.scientific.net/JNanoR.39.34. BibTeX
608.	X. Jing, E. Panholzer, X. Song, E. Grustan-Gutierrez, F. Hui, Y. Shi, G. Benstetter, Yu. Illarionov, T. Grasser, M. Lanza: "Fabrication of Scalable and Ultra Low Power Photodetectors with High Light/Dark Current Ratios Using Polycrystalline Monolayer MoS2 Sheets"; Nano Energy, 30, (2016), 494 - 502 doi:10.1016/j.nanoen.2016.10.032. BibTeX
607.	V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide"; Journal of Applied Physics, 120, (2016), 135705-1 - 135705-8 doi:10.1063/1.4964688. BibTeX
606.	M. Zeraati, S.M.V. Allaei, I.A. Sarsari, M. Pourfath, D. Donadio: "Highly Anisotropic Thermal Conductivity of Arsenene: An Ab Initio Study"; Physical Review B, 93, (2016), 085424-1 - 085424-6 doi:10.1103/PhysRevB.93.085424. BibTeX
605.	M. Reiche, M. Kittler, E. Pippel, H. Uebensee, H. Kosina, A. Grill, Z. Stanojevic, O. Baumgartner: "Impact of Defect-Induced Strain on Device Properties"; Advanced Engineering Materials, 18, (2016), 1 - 4 doi:10.1002/adem.201600736. BibTeX
604.	T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Layer Coupling and Read Disturbances in a Buffered Magnetic Logic Environment"; Proceedings of SPIE, 9931, (invited) (2016), 99312M-1 - 99312M-12 doi:10.1117/12.2236151. BibTeX
603.	Yu. Illarionov, M. Waltl, G. Rzepa, J. Kim, S. Kim, A. Dodabalapur, D. Akinwande, T. Grasser: "Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors"; ACS Nano, 10, (2016), 9543 - 9549 doi:10.1021/acsnano.6b04814. BibTeX
602.	N. Neophytou, M. Thesberg: "Modulation Doping and Energy Filtering as Effective Ways to Improve the Thermoelectric Power Factor"; Journal of Computational Electronics, 15, (invited) (2016), 16 - 26 doi:10.1007/s10825-016-0792-7. BibTeX
601.	M. Thesberg, H. Kosina, N. Neophytou: "On the Effectiveness of the Thermoelectric Energy Filtering Mechanism in Low-Dimensional Superlattices and Nano-Composites"; Journal of Applied Physics, 120, (2016), 234302-1 - 234302-9 doi:10.1063/1.4972192. BibTeX
600.	M. Jech, P. Sharma, S. E. Tyaginov, F. Rudolf, T. Grasser: "On the Limits of Applicability of Drift-Diffusion Based Hot Carrier Degradation Modeling"; Japanese Journal of Applied Physics, 55, (2016), 1 - 6 doi:10.7567/JJAP.55.04ED14. BibTeX
599.	K. Rupp, J. Weinbub, A. Jüngel, T. Grasser: "Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units"; ACM Transactions on Mathematical Software, 43, (2016), 11:1 - 11:27 doi:10.1145/2907944. BibTeX
598.	M. Vexler, G.G. Kareva, Yu. Illarionov, I. Grekhov: "Resonant Electron Tunneling and Related Charging Phenomena in Metal-Oxide-p+-Si Nanostructures"; Technical Physics Letters, 42, (2016), 1090 - 1093 doi:10.1134/S1063785016110109. BibTeX
597.	Y. Wimmer, A.-M. El-Sayed, W. Gös, T. Grasser, A. Shluger: "Role of Hydrogen in Volatile Behaviour of Defects in SiO₂-Based Electronic Devices"; Proceedings of the Royal Society A - Mathematical, Physical and Engineering Sciences, 472, (invited) (2016), 1 - 23 doi:10.1098/rspa.2016.0009. BibTeX
596.	Z. Chaghazardi, S. Touski, M. Pourfath, R. Faez: "Spin Relaxation in Graphene Nanoribbons in the Presence of Substrate Surface Roughness"; Journal of Applied Physics, 120, (2016), 053904-1 - 053904-5 doi:10.1063/1.4960354. BibTeX
595.	L. Filipovic, S. Selberherr: "Stress Considerations for System-on-Chip Gas Sensor Integration in CMOS Technology"; IEEE Transactions on Device and Materials Reliability, 16, (2016), 483 - 495 doi:10.1109/TDMR.2016.2625461. BibTeX
594.	S. Papaleo, W. H. Zisser, A.P. Singulani, H. Ceric, S. Selberherr: "Stress Evolution During Nanoindentation in Open TSVs"; IEEE Transactions on Device and Materials Reliability, 16, (2016), 470 - 474 doi:10.1109/TDMR.2016.2622727. BibTeX
593.	L. Filipovic, S. Selberherr: "Stress in Three-Dimensionally Integrated Sensor Systems"; Microelectronics Reliability, 61, (2016), 3 - 10 doi:10.1016/j.microrel.2015.09.013. BibTeX
592.	M. Glaser, A. Kitzler, A. Johannes, S. Pruncal, H. Potts, S. Conesa-Boj, L. Filipovic, H. Kosina, W. Skorupa, E. Bertagnolli, C. Ronning, A. Fontcuberta i Morral, A. Lugstein: "Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures"; Nano Letters, 16, (2016), 3507 - 3518 doi:10.1021/acs.nanolett.6b00315. BibTeX
591.	B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, M. Simicic, V. Putcha, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, P. Debacker, B. Parvais, P. Raghavan, F. Catthoor, G. Rzepa, M. Waltl, W. Gös, T. Grasser: "The Defect-Centric Perspective of Device and Circuit Reliability - From Gate Oxide Defects to Circuits"; Solid-State Electronics, 125, (2016), 52 - 62 doi:10.1016/j.sse.2016.07.010. BibTeX
590.	S. Nazemi, M. Pourfath, E. Soleimani, H. Kosina: "The Effect of Oxide Shell Thickness on the Structural, Electronic, and Optical Properties of Si-SiO₂ Core-Shell Nano-Crystals: A (Time Dependent)Density Functional Theory Study"; Journal of Applied Physics, 114, (2016), 144302-1 - 1444302-9 doi:10.1063/1.4945392. BibTeX
589.	M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina: "The Fragility of Thermoelectric Power Factor in Cross-Plane Superlattices in the Presence of Nonidealities: A Quantum Transport Simulation Approach"; Journal of Electronic Materials, 45, (2016), 1584 - 1588 doi:10.1007/s11664-015-4124-7. BibTeX
588.	Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Müller, T. Grasser: "The Role of Charge Trapping in MoS₂/SiO₂ and MoS₂/hBN Field-Effect Transistors"; 2D Materials, 3, (2016), 035004-1 - 035004-10 doi:10.1088/2053-1583/3/3/035004. BibTeX
587.	P. Sharma, S. E. Tyaginov, M. Jech, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices"; Solid-State Electronics, 115, (2016), 185 - 191 doi:10.1016/j.sse.2015.08.014. BibTeX
586.	G. Rescher, G. Pobegen, T. Grasser: "Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature Stress"; Materials Science Forum, 858, (2016), 481 - 484 doi:10.4028/www.scientific.net/MSF.858.481. BibTeX
585.	S. E. Tyaginov, M. Jech, J. Franco, P. Sharma, B. Kaczer, T. Grasser: "Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON n-MOSFETs"; IEEE Electron Device Letters, 37, (2016), 84 - 87 doi:10.1109/LED.2015.2503920. BibTeX
584.	K. Rupp, Ph. Tillet, F. Rudolf, J. Weinbub, A. Morhammer, T. Grasser, A. Jüngel, S. Selberherr: "ViennaCL---Linear Algebra Library for Multi- and Many-Core Architectures"; SIAM Journal on Scientific Computing, 38, (2016), S412 - S439 doi:10.1137/15M1026419. BibTeX
583.	J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr: "A Comparison of Approaches for the Solution of the Wigner Equation"; Mathematics and Computers in Simulation, 107, (2015), 108 - 119 doi:10.1016/j.matcom.2014.06.001. BibTeX
582.	N. Sefidmooye Azar, M. Pourfath: "A Comprehensive Study of Transistors Based on Conductive Polymer Matrix Composites"; IEEE Transactions on Electron Devices, 62, (2015), 1584 - 1589 doi:10.1109/TED.2015.2411992. BibTeX
581.	M. I. Vexler, Yu. Illarionov, S. E. Tyaginov, T. Grasser: "Adaptation of the Model of Tunneling in a Metal/CaF2/Si(111) System for Use in Industrial Simulators of MIS Devices"; Semiconductors (Physics of Semiconductor Devices), 49, (2015), 259 - 263 doi:10.1134/S1063782615020207. BibTeX
580.	J. M. Sellier, M. Nedjalkov, I. Dimov: "An Introduction to Applied Quantum Mechanics in the Wigner Monte Carlo Formalism"; Physics Reports, 577, (2015), 1 - 34 doi:10.1016/j.physrep.2015.03.001. BibTeX
579.	I. Dimov, M. Nedjalkov, J. M. Sellier, S. Selberherr: "Boundary Conditions and the Wigner Equation Solution"; Journal of Computational Electronics, 14, (2015), 859 - 863 doi:10.1007/s10825-015-0720-2. BibTeX
578.	P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs"; Microelectronics Reliability, 55, (2015), 1427 - 1432 doi:10.1016/j.microrel.2015.06.021. BibTeX
577.	Z. Stanojevic, O. Baumgartner, L. Filipovic, H. Kosina, M. Karner, C. Kernstock, P. Prause: "Consistent Low-Field Mobility Modeling for Advanced MOS Devices"; Solid-State Electronics, 112, (2015), 37 - 45 doi:10.1016/j.sse.2015.02.008. BibTeX
576.	E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, R. Minixhofer, L. Filipovic, R. Orio, S. Selberherr: "Coupled Simulation to Determine the Impact of Across Wafer Variations in Oxide PECVD on Electrical and Reliability Parameters of Through-Silicon Vias"; Microelectronic Engineering, 137, (2015), 141 - 145 doi:10.1016/j.mee.2014.11.014. BibTeX
575.	P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr, I. Dimov: "Distributed-Memory Parallelization of the Wigner Monte Carlo Method Using Spatial Domain Decomposition"; Journal of Computational Electronics, 14, (2015), 151 - 162 doi:10.1007/s10825-014-0635-3. BibTeX
574.	J. Weinbub, P. Ellinghaus, M. Nedjalkov: "Domain Decomposition Strategies for the Two-Dimensional Wigner Monte Carlo Method"; Journal of Computational Electronics, 14, (2015), 922 - 929 doi:10.1007/s10825-015-0730-0. BibTeX
573.	V. Palankovski, S. Vainshtein, V. Yuferev, J. Kostamovaara, V. Egorkin: "Effect of Hot-Carrier Energy Relaxation on Main Properties of Collapsing Field Domains in Avalanching GaAs"; Applied Physics Letters, 106, (2015), 183505-1 - 183505-5 doi:10.1063/1.4921006. BibTeX
572.	D. Osintsev, V. Sverdlov, S. Selberherr: "Electron Mobility and Spin Lifetime Enhancement in Strained Ultra-Thin Silicon Films"; Solid-State Electronics, 112, (2015), 46 - 50 doi:10.1016/j.sse.2015.02.007. BibTeX
571.	R. Coppeta, D. Holec, H. Ceric, T. Grasser: "Evaluation of Dislocation Energy in Thin Films"; Philosophical Magazine, 95, (2015), 186 - 209 doi:10.1080/14786435.2014.994573. BibTeX
570.	B. Kaczer, J. Franco, Ph. J. Roussel, G. Groeseneken, T. Chiarella, N. Horiguchi, T. Grasser: "Extraction of The Random Component of Time-Dependent Variability Using Matched Pairs"; IEEE Electron Device Letters, 36, (2015), 300 - 302 doi:10.1109/LED.2015.2404293. BibTeX
569.	Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, B. Kaczer, H. Reisinger, T. Grasser: "Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs"; IEEE Transactions on Electron Devices, 62, (2015), 2730 - 2737 doi:10.1109/TED.2015.2454433. BibTeX
568.	M. Asad, S. Salimian, M. Sheikhi, M. Pourfath: "Flexible Phototransistors Based on Graphene Nanoribbon Decorated with MoS₂ Nanoparticles"; Sensors and Actuators A: Physical, 232, (2015), 285 - 291 doi:10.1016/j.sna.2015.06.018. BibTeX
567.	M. Asad, M. Sheikhi, M. Pourfath, M. Moradi: "High Sensitive and Selective Flexible H2S Gas Sensors Based on Cu Nanoparticle Decorated SWCNTs"; Sensors and Actuators B: Chemical, 210, (2015), 1 - 8 doi:10.1016/j.snb.2014.12.086. BibTeX
566.	A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger: "Hole Trapping at Hydrogenic Defects in Amorphous Silicon Dioxide"; Microelectronic Engineering, 147, (2015), 141 - 144 doi:10.1016/j.mee.2015.04.073. BibTeX
565.	Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser: "Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences"; IEEE Transactions on Electron Devices, 62, (2015), 3876 - 3881 doi:10.1109/TED.2015.2480704. BibTeX
564.	A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger: "Hydrogen-Induced Rupture of Strained Si-O Bonds in Amorphous Silicon Dioxide"; Physical Review Letters, 114, (2015), 115503-1 - 115503-5 doi:10.1103/PhysRevLett.114.115503. BibTeX
563.	L. Wang, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov: "Impact of Self-Heating on the Statistical Variability in Bulk and SOI FinFETs"; IEEE Transactions on Electron Devices, 62, (2015), 2106 - 2112 doi:10.1109/TED.2015.2436351. BibTeX
562.	T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop"; Solid-State Electronics, 108, (2015), 2 - 7 doi:10.1016/j.sse.2014.12.023. BibTeX
561.	J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures"; Microelectronic Engineering, 147, (2015), 89 - 91 doi:10.1016/j.mee.2015.04.072. BibTeX
560.	L. Filipovic, A. P. Singulani, F. Roger, S. Carniello, S. Selberherr: "Intrinsic Stress Analysis of Tungsten-Lined Open TSVs"; Microelectronics Reliability, 55, (2015), 1843 - 1848 doi:10.1016/j.microrel.2015.06.014. BibTeX
559.	A. Axelevitch, V. Palankovski, S. Selberherr, G. Golan: "Investigation of Novel Silicon PV Cells of a Lateral Type"; Silicon, 7, (2015), 283 - 291 doi:10.1007/s12633-014-9227-x. BibTeX
558.	H. Karamitaheri, M. Pourfath, H. Kosina, N. Neophytou: "Low-Dimensional Phonon Transport Effects in Ultranarrow Disordered Graphene Nanoribbons"; Physical Review B, 91, (2015), 165410-1 - 165410-15 doi:10.1103/PhysRevB.91.165410. BibTeX
557.	P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser: "Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation"; IEEE Transactions on Electron Devices, 62, (2015), 1811 - 1818 doi:10.1109/TED.2015.2421282. BibTeX
556.	T. Windbacher, J. Ghosh, A. Makarov, V. Sverdlov, S. Selberherr: "Modelling of Multipurpose Spintronic Devices"; International Journal of Nanotechnology, 12, (2015), 313 - 331 doi:10.1504/IJNT.2015.067215. BibTeX
555.	M. Elahi, K. Khaliji, S. M. Tabatabaei, M. Pourfath, R. Asgari: "Modulation of Electronic and Mechanical Properties of Phosphorene Through Strain"; Physical Review B, 91, (2015), 1154121 - 1154128 doi:10.1103/PhysRevB.91.115412. BibTeX
554.	M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina: "Numerical Study of Graphene Superlattice-Based Photodetectors"; IEEE Transactions on Electron Devices, 62, (2015), 593 - 600 doi:10.1109/TED.2014.2383354. BibTeX
553.	S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, B. Kaczer, T. Grasser: "On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation"; Japanese Journal of Applied Physics, 54, (2015), 1 - 6 doi:10.7567/JJAP.54.04DC18. BibTeX
552.	S. Nazemi, M. Pourfath, E. Soleimani, H. Kosina: "On the Role of Spatial Position of Bridged Oxygen Atoms as Surface Passivants on the Ground-State Gap and Photo-Absorption Spectrum of Silicon Nano-Crystals"; Journal of Applied Physics, 118, (2015), 205303-1 - 205303--6 doi:10.1063/1.4936310. BibTeX
551.	M. Moradinasab, M. Pourfath, H. Kosina: "Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers"; IEEE Journal of Quantum Electronics, 51, (2015), 1 - 7 doi:10.1109/JQE.2014.2373171. BibTeX
550.	L. Filipovic, S. Selberherr: "Performance and Stress Analysis of Metal Oxide Films for CMOS-Integrated Gas Sensors"; Sensors, 15, (2015), 7206 - 7227 doi:10.3390/s150407206. BibTeX
549.	V. Sverdlov, S. Selberherr: "Silicon Spintronics: Progress and Challenges"; Physics Reports, 585, (2015), 1 - 40 doi:10.1016/j.physrep.2015.05.002. BibTeX
548.	M. Hosseini, M. Elahi, M. Pourfath, D. Esseni: "Strain Induced Mobility Modulation in Single-Layer MoS₂"; Journal of Physics D: Applied Physics, 48, (2015), 375104-1 - 375104-11 doi:10.1088/0022-3727/48/37/375104. BibTeX
547.	M. Hosseini, M. Elahi, M. Pourfath, D. Esseni: "Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX₂ ( M = Mo, W ; X = S , Se)"; IEEE Transactions on Electron Devices, 62, (2015), 3192 - 3198 doi:10.1109/TED.2015.2461617. BibTeX
546.	Yu. Illarionov, M. I. Vexler, M. Karner, S. E. Tyaginov, J. Cervenka, T. Grasser: "TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures"; Current Applied Physics, 15, (2015), 78 - 83 doi:10.1016/j.cap.2014.10.015. BibTeX
545.	M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina: "The Influence of Non-Idealities on the Thermoelectric Power Factor of Nanostructured Superlattices"; Journal of Applied Physics, 118, (2015), 224301-1 - 224301-6 doi:10.1063/1.4936839. BibTeX
544.	M. Nedjalkov, J. Weinbub, P. Ellinghaus, S. Selberherr: "The Wigner Equation in the Presence of Electromagnetic Potentials"; Journal of Computational Electronics, 14, (2015), 888 - 893 doi:10.1007/s10825-015-0732-y. BibTeX
543.	A. El-Sayed, Y. Wimmer, W. Gös, T. Grasser, V. Afanas´Ev, A. Shluger: "Theoretical Models of Hydrogen-Induced Defects in Amorphous Silicon Dioxide"; Physical Review B, 92, (2015), 014107-1 - 014107-11 doi:10.1103/PhysRevB.92.014107. BibTeX
542.	F. Rudolf, K. Rupp, J. Weinbub, A. Morhammer, S. Selberherr: "Transformation Invariant Local Element Size Specification"; Applied Mathematics and Computation, 267, (2015), 195 - 206 doi:10.1016/j.amc.2015.04.027. BibTeX
541.	N. Neophytou, H. Karamitaheri, H. Kosina: "Use of Field-Effect Density Modulation to Increase ZT for Si Nanowires: A Simulation Study"; Journal of Electronic Materials, 44, (2015), 1599 - 1605 doi:10.1007/s11664-014-3488-4. BibTeX
540.	N. Ghobadi, M. Pourfath: "Vertical Tunneling Graphene Heterostructure-Based Transistor for Pressure Sensing"; IEEE Electron Device Letters, 36, (2015), 280 - 282 doi:10.1109/LED.2014.2388452. BibTeX
539.	M. Hosseini, M. Elahi, M. Pourfath, D. Esseni: "Very Large Strain Gauges Based on Single Layer MoSe₂ and WSe₂ for Sensing Applications"; Applied Physics Letters, 107, (2015), 253503-1 - 253503-4 doi:10.1063/1.4937438. BibTeX
538.	J. Weinbub, M. Wastl, K. Rupp, F. Rudolf, S. Selberherr: "ViennaMaterials - A Dedicated Material Library for Computational Science and Engineering"; Applied Mathematics and Computation, 267, (2015), 282 - 293 doi:10.1016/j.amc.2015.03.094. BibTeX
537.	J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr: "A Benchmark Study of the Wigner Monte Carlo Method"; Monte Carlo Methods and Applications, 20, (2014), 43 - 51 doi:10.1515/mcma-2013-0018. BibTeX
536.	N. Ghobadi, M. Pourfath: "A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures"; IEEE Transactions on Electron Devices, 61, (2014), 186 - 192 doi:10.1109/TED.2013.2291788. BibTeX
535.	N. Djavid, K. Khaliji, S. M. Tabatabaei, M. Pourfath: "A Computational Study on the Electronic Transport Properties of Ultra-Narrow Disordered Zigzag Graphene Nanoribbons"; IEEE Transactions on Electron Devices, 61, (2014), 23 - 29 doi:10.1109/TED.2013.2290773. BibTeX
534.	J. Weinbub, A. Hössinger: "Accelerated Redistancing for Level Set-Based Process Simulations with the Fast Iterative Method"; Journal of Computational Electronics, 13, (2014), 877 - 884 doi:10.1007/s10825-014-0604-x. BibTeX
533.	K. Rupp, Ph. Tillet, A. Jüngel, T. Grasser: "Achieving Portable High Performance for Iterative Solvers on Accelerators"; Proceedings in Applied Mathematics and Mechanics, 14, (2014), 963 - 964 doi:10.1002/pamm.201410462. BibTeX
532.	D. Osintsev, V. Sverdlov, S. Selberherr: "Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films"; Advanced Materials Research - Print/CD, 854, (2014), 29 - 34 doi:10.4028/www.scientific.net/AMR.854.29. BibTeX
531.	Yu. Illarionov, M. Bina, S. E. Tyaginov, T. Grasser: "An Analytical Approach for the Determination of the Lateral Trap Position in Ultra-Scaled MOSFETs"; Japanese Journal of Applied Physics, 53, (2014), 04EC22-1 - 04EC22-4 doi:10.7567/JJAP.53.04EC22. BibTeX
530.	H. Karamitaheri, N. Neophytou, H. Kosina: "Anomalous Diameter Dependence of Thermal Transport in Ultra-Narrow Si Nanowires"; Journal of Applied Physics, 115, (2014), 024302_1 - 024302_7 doi:10.1063/1.4858375. BibTeX
529.	M. Gholipour, N. Masoumi, Y.C. Chen, D. Chen, M. Pourfath: "Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design"; IEEE Transactions on Electron Devices, 61, (2014), 4000 - 4006 doi:10.1109/TED.2014.2362774. BibTeX
528.	Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser: "Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors"; Applied Physics Letters, 105, (2014), 1435071 - 1435075 doi:10.1063/1.4897344. BibTeX
527.	V. V. A. Camargo, B. Kaczer, T. Grasser, G. Wirth: "Circuit Simulation of Workload-Dependent RTN and BTI Based on Trap Kinetics"; Microelectronics Reliability, 54, (2014), 2364 - 2370. BibTeX
526.	P. Reininger, B. Schwarz, H. Detz, D. MacFarland, T. Zederbauer, A. M. Andrews, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser: "Diagonal-Transition Quantum Cascade Detector"; Applied Physics Letters, 105, (2014), 1 - 4 doi:10.1063/1.4894767. BibTeX
525.	Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov: "Electrical and Optical Characterization of Au/CaF₂/p-Si(111) Tunnel-Injection Diodes"; Journal of Applied Physics, 115, (2014), 223706-1 - 223706-5 doi:10.1063/1.4882375. BibTeX
524.	W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr: "Electromigration Reliability of Open TSV Structures"; Microelectronics Reliability, 54, (2014), 2133 - 2137 doi:10.1016/j.microrel.2014.07.099. BibTeX
523.	J. M. Sellier, S. Amoroso, M. Nedjalkov, S. Selberherr, A. Asenov, I. Dimov: "Electron Dynamics in Nanoscale Transistors by Means of Wigner and Boltzmann Approaches"; Physica A: Statistical Mechanics and its Applications, 398, (2014), 194 - 198 doi:10.1016/j.physa.2013.12.045. BibTeX
522.	D. Narducci, B. Lorenzi, X. Zianni, N. Neophytou, S. Frabboni, G. Gazzadi, A. Roncaglia, F. Suriano: "Enhancement of the Power Factor in Two-Phase Silicon-Boron Nanocrystalline Alloys"; Physica Status Solidi A, 211, (2014), 1255 - 1258 doi:10.1002/pssa.201300130. BibTeX
521.	N. Neophytou, H. Kosina: "Gated Si Nanowires for Large Thermoelectric Power Factors"; Applied Physics Letters, 105, (2014), 073119-1 - 5 doi:10.1063/1.4893977. BibTeX
520.	M. Asad, M. Fathipour, M. Sheikhi, M. Pourfath: "High-performance Infrared Photo-transistor Based on SWCNT Decorated with PbS Nanoparticles"; Sensors and Actuators A: Physical, 220, (2014), 213 - 220 doi:10.1016/j.sna.2014.10.017. BibTeX
519.	J. Weinbub, K. Rupp, S. Selberherr: "Highly Flexible and Reusable Finite Element Simulations with ViennaX"; Journal of Computational and Applied Mathematics, 270, (2014), 484 - 495 doi:10.1016/j.cam.2013.12.013. BibTeX
518.	M. Tapajna, N. Killat, V. Palankovski, D. Gregusova, K. Cico, J. Carlin, N. Grandjean, M. Kuball, J. Kuzmik: "Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors"; IEEE Transactions on Electron Devices, 61, (2014), 2793 - 2801 doi:10.1109/TED.2014.2332235. BibTeX
517.	G. Pobegen, T. Aichinger, A. Salinaro, T. Grasser: "Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs"; Materials Science Forum, 778-780, (2014), 959 - 962 doi:10.4028/www.scientific.net/MSF.778-780.959. BibTeX
516.	L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Seinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank: "Methods of Simulating Thin Film Deposition Using Spray Pyrolysis Techniques"; Microelectronic Engineering, 117, (2014), 57 - 66 doi:10.1016/j.mee.2013.12.025. BibTeX
515.	H. Ceric, R. Orio, W. H. Zisser, S. Selberherr: "Microstructural Impact on Electromigration: A TCAD Study"; Facta universitatis - series: Electronics and Energetics, 27, (2014), 1 - 11 doi:10.2298/FUEE1401001C. BibTeX
514.	G.A. Rott, K. Rott, H. Reisinger, W. Gustin, T. Grasser: "Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel Transistors"; Microelectronics Reliability, 54, (2014), 2310 - 2314 doi:10.1016/j.microrel.2014.07.040. BibTeX
513.	S. E. Tyaginov, Yu. Illarionov, M. I. Vexler, M. Bina, J. Cervenka, J. Franco, B. Kaczer, T. Grasser: "Modeling of Deep-Submicron Silicon-Based MISFETs with Calcium Fluoride Dielectric"; Journal of Computational Electronics, 13, (2014), 733 - 738 doi:10.1007/s10825-014-0593-9. BibTeX
512.	S. E. Tyaginov, Y. Wimmer, T. Grasser: "Modeling of Hot-Carrier Degradation Based on Thorough Carrier Transport Treatment"; Facta Universitatis, 27, (invited) (2014), 479 - 508 doi:10.2298/FUEE1404479T. BibTeX
511.	L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger: "Modeling the Growth of Tin Dioxide using Spray Pyrolysis Deposition for Gas Sensor Applications"; IEEE Transactions on Semiconductor Manufacturing, 27, (2014), 269 - 277 doi:10.1109/TSM.2014.2298883. BibTeX
510.	S. Amoroso, L. Gerrer, M. Nedjalkov, R. Hussin, C. Alexander, A. Asenov: "Modelling Carriers Mobility in nano-MOSFETs in the Presence of Discrete Trapped Charges: Accuracy and Issues"; IEEE Transactions on Electron Devices, 61, (2014), 1292 - 1298 doi:10.1109/TED.2014.2312820. BibTeX
509.	S. Wolf, N. Neophytou, Z. Stanojevic, H. Kosina: "Monte Carlo Simulations of Thermal Conductivity in Nanoporous Si Membranes"; Journal of Electronic Materials, 43, (2014), 3870 - 3875 doi:10.1007/S11664-014-3324-X. BibTeX
508.	T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, B. Kaczer: "NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark"; IEEE Transactions on Electron Devices, 61, (2014), 3586 - 3593 doi:10.1109/TED.2014.2353578. BibTeX
507.	T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr: "Novel Bias-Field-Free Spin Transfer Oscillator"; Journal of Applied Physics, 115, (2014), 17C901-1 - 17C901-3 doi:10.1063/1.4862936. BibTeX
506.	N. Ghobadi, M. Pourfath: "On the Role of Disorder on Graphene and Graphene Nanoribbon-Based Vertical Tunneling Transistors"; Journal of Applied Physics, 116, (2014), 1845061 - 1845067 doi:10.1063/1.4901584. BibTeX
505.	A. Mojibpour, M. Pourfath, H. Kosina: "Optimization Study of Third Harmonic Generation in Quantum Cascade Lasers"; Optics Express, 22, (2014), 20607 - 20612 doi:10.1364/OE.22.020607. BibTeX
504.	B. Lorenzi, D. Narducci, R. Tonini, S. Frabboni, G. Gazzadi, G. Ottaviani, N. Neophytou, X. Zianni: "Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids"; Journal of Electronic Materials, 43, (2014), 3812 - 3816 doi:10.1007/s11664-014-3170-x. BibTeX
503.	M. Bina, S. E. Tyaginov, J. Franco, K. Rupp, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser: "Predictive Hot-Carrier Modeling of n-Channel MOSFETs"; IEEE Transactions on Electron Devices, 61, (2014), 3103 - 3110 doi:10.1109/TED.2014.2340575. BibTeX
502.	A. Makarov, V. Sverdlov, S. Selberherr: "Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer"; International Journal of High Speed Electronics and Systems, 23, (invited) (2014), 1450014-1 - 1450014-15 doi:10.1142/S0129156414500141. BibTeX
501.	H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates"; Advanced Materials Research - Print/CD, 854, (2014), 89 - 95 doi:10.4028/www.scientific.net/AMR.854.89. BibTeX
500.	J. Kuzmik, M. Tapajna, L. Válik, M. Molnar, D. Donoval, C. Fleury, D. Pogany, G. Strasser, O. Hilt, F. Brunner, J. Würfl: "Self-Heating in GaN Transistors Designed for High-Power Operation"; IEEE Transactions on Electron Devices, 61, (2014), 3429 - 3434 doi:10.1109/TED.2014.2350516. BibTeX
499.	M. Molnar, D. Donoval, J. Kuzmik, J. Marek, A. Chvala, P. Pribytny, V. Mikolasek, K. Rendek, V. Palankovski: "Simulation Study of Interface Traps and Bulk Traps in n++GaN/InAlN/AlN/GaN High Electron Mobility Transistors"; Applied Surface Science, 312, (2014), 157 - 161 doi:10.1016/j.apsusc.2014.04.078. BibTeX
498.	J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr: "Spin Injection and Diffusion in Silicon Based Devices from a Space Charge Layer"; Journal of Applied Physics, 115, (2014), 17C503-1 - 17C503-3 doi:10.1063/1.4856056. BibTeX
497.	J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr: "Spin Injection in a Semiconductor Through a Space-Charge Layer"; Solid-State Electronics, 101, (2014), 116 - 121 doi:10.1016/j.sse.2014.06.035. BibTeX
496.	S. Soleimani Kahnoj, S. Touski, M. Pourfath: "The Effect of Electron-Electron Interaction Induced Dephasing on Electronic Transport in Graphene Nanoribbons"; Applied Physics Letters, 105, (2014), 1035021 - 1035024 doi:10.1063/1.4894859. BibTeX
495.	L. Filipovic, S. Selberherr: "The Effects of Etching and Deposition on the Performance and Stress Evolution of Open Through Silicon Vias"; Microelectronics Reliability, 54, (2014), 1953 - 1958 doi:10.1016/j.microrel.2014.07.014. BibTeX
494.	F. Rudolf, J. Weinbub, K. Rupp, S. Selberherr: "The Meshing Framework ViennaMesh for Finite Element Applications"; Journal of Computational and Applied Mathematics, 270, (2014), 166 - 177 doi:10.1016/j.cam.2014.02.005. BibTeX
493.	S. Wolf, N. Neophytou, H. Kosina: "Thermal Conductivity of Silicon Nanomeshes: Effects of Porosity and Roughness"; Journal of Applied Physics, 115, (2014), 204306 - 204313 doi:10.1063/1.4879242. BibTeX
492.	J. Weinbub, K. Rupp, S. Selberherr: "ViennaX: A Parallel Plugin Execution Framework for Scientific Computing"; Engineering with Computers, 30, (2014), 651 - 668 doi:10.1007/s00366-013-0314-1. BibTeX
491.	S. M. Tabatabaei, M. Noei, K. Khaliji, M. Pourfath, M. Fathipour: "A First-Principles Study on the Effect of Biaxial Strain on the Ultimate Performance of Monolayer MoS2-Based Double Gate Field Effect Transistor"; Journal of Applied Physics, 113, (2013), 163708-1 - 163708-6 doi:10.1063/1.4803032. BibTeX
490.	M. I. Vexler, S. E. Tyaginov, Yu. Illarionov, Y. K. Sing, A. D. Shenp, V. V. Fedorov, D. V. Isakov: "A General Simulation Procedure for the Electrical Characteristics of Metal Insulator Semiconductor Tunnel Structures"; Semiconductors (Physics of Semiconductor Devices), 47, (2013), 686 - 694 doi:10.1134/S1063782613050230. BibTeX
489.	L. Filipovic, S. Selberherr: "A Method for Simulating Atomic Force Microscope Nanolithography in the Level Set Framework"; Microelectronic Engineering, 107, (2013), 23 - 32 doi:10.1016/j.mee.2013.02.083. BibTeX
488.	L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Seinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger: "A Method for Simulating Spray Pyrolysis Deposition in the Level Set Framework"; Engineering Letters, 21, (invited) (2013), 224 - 240. BibTeX
487.	A. S. Starkov, O. V. Pakhomov, I. Starkov: "Account for Mutual Influence of Electrical, Elastic, and Thermal Phenomena for Ferroelectric Domain Wall Modeling"; Ferroelectrics, 442, (2013), 10 - 17 doi:10.1080/00150193.2013.773854. BibTeX
486.	G. Pobegen, M. Nelhiebel, S. de Filippis, T. Grasser: "Accurate High Temperature Measurements Using Local Polysilicon Heater Structures"; IEEE Transactions on Device and Materials Reliability, 99, (2013), 1 - 8 doi:10.1109/TDMR.2013.2265015. BibTeX
485.	N. Neophytou, H. Karamitaheri, H. Kosina: "Atomistic Calculations of the Electronic, Thermal, and Thermoelectric Properties of Ultra-Thin Si Layers"; Journal of Computational Electronics, 12, (2013), 611 - 622 doi:10.1007/s10825-013-0522-3. BibTeX
484.	H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "Atomistic Study of the Lattice Thermal Conductivity of Rough Graphene Nanoribbons"; IEEE Transactions on Electron Devices, 60, (2013), 2142 - 2147 doi:10.1109/TED.2013.2262049. BibTeX
483.	H. Karamitaheri, N. Neophytou, H. Kosina: "Ballistic Phonon Transport in Ultra-Thin Silicon Layers: Effects of Confinement and Orientation"; Journal of Applied Physics, 113, (2013), 204305-1 - 204305-9 doi:10.1063/1.4808100. BibTeX
482.	H. Karamitaheri, N. Neophytou, M. Karami Taheri, R. Faez, H. Kosina: "Calculation of Confined Phonon Spectrum in Narrow Silicon Nanowires Using the Valence Force Field Method"; Journal of Electronic Materials, 42, (2013), 2091 - 2097 doi:10.1007/s11664-013-2533-z. BibTeX
481.	D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr: "Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors"; Sains Malaysiana, 42, (2013), 205 - 211. BibTeX
480.	P. Schwaha, D. Querlioz, P. Dollfus, J. Saint-Martin, M. Nedjalkov, S. Selberherr: "Decoherence Effects in the Wigner Function Formalism"; Journal of Computational Electronics, 12, (2013), 388 - 396 doi:10.1007/s10825-013-0480-9. BibTeX
479.	J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr: "Decoherence and Time Reversibility: The Role of Randomness at Interfaces"; Journal of Applied Physics, 114, (2013), 174902-1 - 174902-7 doi:10.1063/1.4828736. BibTeX
478.	A. S. Starkov, I. Starkov: "Domain Wall Motion for Slowly Varying Electric Field"; Ferroelectrics, 442, (2013), 1 - 9 doi:10.1080/00150193.2013.773852. BibTeX
477.	G. Pobegen, T. Grasser: "Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps"; Materials Science Forum, 740-742, (2013), 757 - 760 doi:10.4028/www.scientific.net/MSF.740-742.757. BibTeX
476.	B. Kaczer, M. Toledano-Luque, W. Gös, T. Grasser, G. Groeseneken: "Gate Current Random Telegraph Noise and Single Defect Conduction"; Microelectronic Engineering, 109, (2013), 123 - 125 doi:10.1016/j.mee.2013.03.110. BibTeX
475.	H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Implication Logic Gates Using Spin-Transfer-Torque-Operated Magnetic Tunnel Junctions for Intrinsic Logic-In-Memory"; Solid-State Electronics, 84, (2013), 191 - 197 doi:10.1016/j.sse.2013.02.017. BibTeX
474.	H. Mahmoudi, V. Sverdlov, S. Selberherr: "Influence of Geometry on the Memristive Behavior of Domain Wall Spintronic Memristors and its Applications for Measurement"; Journal of Superconductivity and Novel Magnetism, 26, (2013), 1745 - 1749 doi:10.1007/s10948-012-2034-y. BibTeX
473.	Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov: "Light Emission from the Au/CaF2/p-Si(111) Capacitors: Evidence for an Elastic Electron Tunneling Through a Thin (1-2 nm) Fluoride Layer"; Thin Solid Films, 545, (2013), 580 - 583 doi:10.1016/j.tsf.2013.07.050. BibTeX
472.	I. Starkov, H. Enichlmair: "Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in Long-Channel n-MOSFETs"; Journal of Vacuum Science & Technology B, 31, (2013), 01A118-1 - 01A118-7 doi:10.1116/1.4774106. BibTeX
471.	T. Windbacher, H. Mahmoudi, A. Makarov, V. Sverdlov, S. Selberherr: "Multiple Purpose Spin Transfer Torque Operated Devices"; Facta Universitatis, 26, (2013), 227 - 238 doi:10.2298/FUEE1303227W. BibTeX
470.	J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, Ph. J. Roussel, L. Witters, T. Grasser, G Groeseneken: "NBTI Reliability of SiGe and Ge Channel pMOSFETs With SiO2/HfO2 Dielectric Stack"; IEEE Transactions on Device and Materials Reliability, 13, (invited) (2013), 497 - 506 doi:10.1109/TDMR.2013.2281731. BibTeX
469.	G. Pobegen, S. E. Tyaginov, M. Nelhiebel, T. Grasser: "Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation"; IEEE Electron Device Letters, 34, (2013), 939 - 941 doi:10.1109/LED.2013.2262521. BibTeX
468.	G. Pobegen, T. Grasser: "On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale"; IEEE Transactions on Electron Devices, 60, (2013), 2148 - 2155 doi:10.1109/TED.2013.2264816. BibTeX
467.	N. Neophytou, H. Kosina: "Optimizing Thermoelectric Power Factor by Means of a Potential Barrier"; Journal of Applied Physics, 114, (2013), 044315_1 - 044315-6 doi:10.1063/1.4816792. BibTeX
466.	M. Nedjalkov, S. Selberherr, D.K. Ferry, D. Vasileska, P. Dollfus, D. Querlioz, I. Dimov, P. Schwaha: "Physical Scales in the Wigner-Boltzmann Equation"; Annals of Physics, 328, (2013), 220 - 237 doi:10.1016/j.aop.2012.10.001. BibTeX
465.	N. Neophytou, X. Zianni, H. Kosina, S. Frabboni, B. Lorenzi, D. Narducci: "Power Factor Enhancement by Inhomogeneous Distribution of Dopants in Two-Phase Nanocrystalline Systems"; Journal of Electronic Materials, 43, (2013), 1896 - 1904 doi:10.1007/s11664-013-2898-z. BibTeX
464.	D. Demidov, K. Ahnert, K. Rupp, P. Gottschling: "Programming CUDA and OpenCL: A Case Study Using Modern C++ Libraries"; SIAM Journal on Scientific Computing, 35, (2013), 453 - 472 doi:10.1137/120903683. BibTeX
463.	T. Aichinger, M. Nelhiebel, T. Grasser: "Refined NBTI Characterization of Arbitrarily Stressed PMOS Devices at Ultra-low and Unique Temperatures"; Microelectronics Reliability, 53, (2013), 937 - 946 doi:10.1016/j.microrel.2013.03.007. BibTeX
462.	H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits"; IEEE Transactions on Magnetics, 49, (2013), 5620 - 5628 doi:10.1109/TMAG.2013.2278683. BibTeX
461.	M. Jurkovic, D. Gregusova, V. Palankovski, S. Hascik, M. Blaho, K. Cico, K. Frohlich, J. Carlin, N. Grandjean, J. Kuzmik: "Schottky-Barrier Normally Off GaN/InAlN/AlN/GaN HEMT With Selectively Etched Access Region"; IEEE Electron Device Letters, 34, (2013), 432 - 434 doi:10.1109/LED.2013.2241388. BibTeX
460.	J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, T. Kauerauf, J. Mitard, L. Witters, T. Grasser, G. Groeseneken: "SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices-Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues"; IEEE Transactions on Electron Devices, 60, (2013), 405 - 412. BibTeX
459.	J. Franco, B. Kaczer, Ph. J. Roussel, J. Mitard, M. Cho, L. Witters, T. Grasser, G. Groeseneken: "SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices-Part I: NBTI"; IEEE Transactions on Electron Devices, 60, (2013), 396 - 404 doi:10.1109/TED.2012.2225625. BibTeX
458.	T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr: "Simulation Study of an Electrically Read- and Writable Magnetic Logic Gate"; Microelectronic Engineering, 112, (2013), 188 - 192 doi:10.1016/j.mee.2012.12.030. BibTeX
457.	N. Neophytou, X. Zianni, H. Kosina, S. Frabboni, B. Lorenzi, D. Narducci: "Simultaneous Increase in Electrical Conductivity and Seebeck Coefficient in Highly Boron-Doped Nanocrystalline Si"; Nanotechnology, 24, (2013), 205402 doi:10.1088/0957-4484/24/20/205402. BibTeX
456.	A. P. Singulani, H. Ceric, S. Selberherr: "Stress Evolution in the Metal Layers of TSVs with Bosch Scallops"; Microelectronics Reliability, 53, (2013), 1602 - 1605 doi:10.1016/j.microrel.2013.07.132. BibTeX
455.	A. Makarov, V. Sverdlov, S. Selberherr: "Structural Optimization of MTJs with a Composite Free Layer"; Proceedings of SPIE, 8813, (invited) (2013), 88132Q-1 - 88132Q-9 doi:10.1117/12.2025568. BibTeX
454.	D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr: "Subband Splitting and Surface Roughness Induced Spin Relaxation in (001) Silicon SOI MOSFETs"; Solid-State Electronics, 90, (2013), 34 - 38 doi:10.1016/j.sse.2013.02.055. BibTeX
453.	S. Touski, M. Pourfath: "Substrate Surface Corrugation Effects on the Electronic Transport in Graphene Nanoribbons"; Applied Physics Letters, 103, (2013), 1435061 - 1435063 doi:10.1063/1.4824362. BibTeX
452.	J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, M. Choa, T. Kauerauf, J. Mitard, G. Eneman, L. Witters, T. Grasser, G. Groeseneken: "Superior Reliability of High Mobility (Si)Ge Channel pMOSFETs"; Microelectronic Engineering, 109, (2013), 250 - 256 doi:10.1016/j.mee.2013.03.001. BibTeX
451.	A. S. Starkov, O. V. Pakhomov, I. Starkov: "Theoretical Model for Thin Ferroelectric Films and the Multilayer Structures Based on Them"; Journal of Experimental and Theoretical Physics, 116, (2013), 987 - 994 doi:10.1134/S1063776113060149. BibTeX
450.	M. Toledano-Luque, B. Kaczer, T. Grasser, Ph. J. Roussel, J. Franco, G. Groeseneken: "Toward a Streamlined Projection of Small Device Bias Temperature Instability Lifetime Distributions"; Journal of Vacuum Science & Technology B, 31, (2013), 01A114-1 - 01A114-4 doi:10.1116/1.4772587. BibTeX
449.	G.G. Kareva, M. I. Vexler, Yu. Illarionov: "Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling Diode"; Microelectronic Engineering, 109, (2013), 270 - 273 doi:10.1016/j.mee.2013.03.063. BibTeX
448.	J.-F. Mennemann, A. Jüngel, H. Kosina: "Transient Schrödinger-Poisson Simulations of a High-Frequency Resonant Tunneling Diode Oscillator"; Journal of Computational Physics, 239, (2013), 187 - 205 doi:10.1016/j.jcp.2012.12.009. BibTeX
447.	K. Khaliji, M. Noei, S. M. Tabatabaei, M. Pourfath, M. Fathipour, Y. Abdi: "Tunable Bandgap in Bilayer Armchair Graphene Nanoribbons: Concurrent Influence of Electric Field and Uniaxial Strain"; IEEE Transactions on Electron Devices, 60, (2013), 2464 - 2470 doi:10.1109/TED.2013.2266300. BibTeX
446.	H. Karamitaheri, N. Neophytou, H. Kosina: "Use of Atomistic Phonon Dispersion and Boltzmann Transport Formalism to Study the Thermal Conductivity of Narrow Si Nanowires"; Journal of Electronic Materials, 1, (2013), 1 - 8 doi:10.1007/s11664-013-2884-5. BibTeX
445.	V. V. A. Camargo, B. Kaczer, G. Wirth, T. Grasser, G. Groeseneken: "Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits"; IEEE Transactions on Very Large Scale Integration (VLSI) Systems, PP, (2013), doi:10.1109/TVLSI.2013.2240323. BibTeX
444.	O. Baumgartner, Z. Stanojevic, K. Schnass, M. Karner, H. Kosina: "VSP - A Quantum-Electronic Simulation Framework"; Journal of Computational Electronics, 12, (2013), 701 - 721 doi:10.1007/s10825-013-0535-y. BibTeX
443.	M. Nedjalkov, P. Schwaha, S. Selberherr, J. M. Sellier, D. Vasileska: "Wigner Quasi-Particle Attributes - An Asymptotic Perspective"; Applied Physics Letters, 102, (2013), 163113-1 - 163113-4 doi:10.1063/1.4802931. BibTeX
442.	M. Noei, M. Moradinasab, M. Fathipour: "A Computational Study of Ballistic Graphene Nanoribbon Field Effect Transistors"; Physica E: Low-dimensional Systems and Nanostructures, 44, (2012), 1780 - 1786 doi:10.1016/j.physe.2011.12.018. BibTeX
441.	F. Schanovsky, O. Baumgartner, V. Sverdlov, T. Grasser: "A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS Structures"; Journal of Computational Electronics, 11, (2012), 218 - 224 doi:10.1007/s10825-012-0403-1. BibTeX
440.	A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr: "A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons"; IEEE Transactions on Electron Devices, 59, (2012), 433 - 440 doi:10.1109/TED.2011.2173690. BibTeX
439.	B. Schwarz, P. Reininger, H. Detz, T. Zederbauer, A. M. Andrews, S. Kalchmair, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser: "A bi-functional quantum cascade device for same-frequency lasing and detection"; Applied Physics Letters, 101, (2012), 1911091 - 1911094 doi:10.1063/1.4767128. BibTeX
438.	M. Moradinasab, H. Nematian, M. Pourfath, M. Fathipour, H. Kosina: "Analytical Models of Approximations for Wave Functions and Energy Dispersion in Zigzag Graphene Nanoribbons"; Journal of Applied Physics, 111, (2012), 074318-1 - 074318-9 doi:10.1063/1.3702429. BibTeX
437.	M. Vasicek, J. Cervenka, D. Esseni, P. Palestri, T. Grasser: "Applicability of Macroscopic Transport Models to Decananometer MOSFETs"; IEEE Transactions on Electron Devices, 59, (2012), 639 - 646 doi:10.1109/TED.2011.2181177. BibTeX
436.	J. Franco, S. Graziano, B. Kaczer, F. Crupi, L. Ragnarsson, T. Grasser, G. Groeseneken: "BTI Reliability of Ultra-Thin EOT MOSFETs for Sub-Threshold Logic"; Microelectronics Reliability, 52, (2012), 1932 - 1935 doi:10.1016/j.microrel.2012.06.058. BibTeX
435.	N. Neophytou, H. Kosina: "Bias-Induced Hole Mobility Increase in Narrow [111] and [110] Si Nanowire Transistors"; IEEE Electron Device Letters, 33, (2012), 652 - 654 doi:10.1109/LED.2012.2188879. BibTeX
434.	J. Kuzmik, S. Vitanov, C. Dua, J. Carlin, C. Ostermaier, A. Alexewicz, G. Strasser, D. Pogany, E. Gornik, N. Grandjean, S. Delage, V. Palankovski: "Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors"; Japanese Journal of Applied Physics, 51, (2012), 054102-1 - 054102-5 doi:10.1143/JJAP.51.054102. BibTeX
433.	N. Neophytou, H. Kosina: "Confinement-Induced Carrier Mobility Increase in Nanowires by Quantization of Warped Bands"; Solid-State Electronics, 70, (2012), 81 - 91 doi:10.1016/j.sse.2011.11.018. BibTeX
432.	M. Toledano-Luque, B. Kaczer, J. Franco, Ph. J. Roussel, T. Grasser, G. Groeseneken: "Defect-Centric Perspective of Time-Dependent BTI Variability"; Microelectronics Reliability, 52, (2012), 1883 - 1890 doi:10.1016/j.microrel.2012.06.120. BibTeX
431.	A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina: "Device Performance of Graphene Nanoribbon Field-Effect Transistors in the Presence of Line-Edge Roughness"; IEEE Transactions on Electron Devices, 59, (2012), 3527 - 3532 doi:10.1109/TED.2012.2218817. BibTeX
430.	R. Orio, H. Ceric, S. Selberherr: "Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via"; Microelectronics Reliability, 52, (2012), 1981 - 1986 doi:10.1016/j.microrel.2012.07.021. BibTeX
429.	A. Makarov, V. Sverdlov, S. Selberherr: "Emerging Memory Technologies: Trends, Challenges, and Modeling Methods"; Microelectronics Reliability, 52, (invited) (2012), 628 - 634 doi:10.1016/j.microrel.2011.10.020. BibTeX
428.	H. Karamitaheri, N. Neophytou, M. Pourfath, R. Faez, H. Kosina: "Engineering Enhanced Thermoelectric Properties in Zigzag Graphene Nanoribbons"; Journal of Applied Physics, 111, (2012), 054501-1 - 054501-9 doi:10.1063/1.3688034. BibTeX
427.	A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling"; IEEE Transactions on Magnetics, 48, (2012), 1289 - 1292 doi:10.1109/TMAG.2011.2173565. BibTeX
426.	K. Rupp: "High-Level Manipulation of OpenCL-Based Subvectors and Submatrices"; Procedia Computer Science, 9, (2012), 1857 - 1866 doi:10.1016/j.procs.2012.04.204. BibTeX
425.	S. Ahmed, K. D. Holland, N. Paydavosi, C. Rogers, A. Alam, N. Neophytou, D. Kienle, M. Vaidyanathan: "Impact of Effective Mass on the Scaling Behavior of the f_T and f_max of III-V High-Electron-Mobility Transistors"; IEEE Transactions on Nanotechnology, 11, (2012), 1160 - 1173. BibTeX
424.	J. Franco, B. Kaczer, M. Toledano-Luque, M. F. Bukhori, Ph. J. Roussel, T. Grasser, A. Asenov, G. Groeseneken: "Impact of Individual Charged Gate-Oxide Defects on the Entire I_D -V_G Characteristic of Nanoscaled FETs"; IEEE Electron Device Letters, 33, (2012), 779 - 781. BibTeX
423.	A. Starkov, O. Pakhomov, I. Starkov: "Impact of the Pyroelectric Effect on Ferroelectric Phase Transitions"; Ferroelectrics, 427, (2012), 78 - 83 doi:10.1080/00150193.2012.674413. BibTeX
422.	H. Ceric, R. Orio, S. Selberherr: "Interconnect Reliability Dependence on Fast Diffusivity Paths"; Microelectronics Reliability, 52, (invited) (2012), 1532 - 1538 doi:10.1016/j.microrel.2011.09.035. BibTeX
421.	N. Neophytou, H. Kosina: "Large Thermoelectric Power Factor in P-Type Si (110)/[110] Ultra-Thin-Layers Compared to Differently Oriented Channels"; Journal of Applied Physics, 112, (2012), 024305-1 - 024305-6 doi:10.1063/1.4737122. BibTeX
420.	F. Ortmann, S. Roche, J. C. Greer, G. Huhs, T. Shulthess, T. Deutsch, P. Weinberger, M. Payne, J. M. Sellier, J. Sprekels, J. Weinbub, K. Rupp, M. Nedjalkov, D. Vasileska, E. Alfi nito, L. Reggiani, D. Guerra, D.K. Ferry, M. Saraniti, S.M. Goodnick, A. Kloes, L. Colombo, K. Lilja, J. Mateos, T. Gonzalez, E. Velazquez, P. Palestri, A. Schenk, M. Macucci: "Multi-Scale Modelling for Devices and Circuits"; E-Nano Newsletter, Special Issue April 2012, (2012), 31 page(s) . BibTeX
419.	K. Rott, H. Reisinger, S. Aresu, C. Schlünder, K. Kölpin, W. Gustin, T. Grasser: "New Insights on the PBTI Phenomena in SiON pMOSFETs"; Microelectronics Reliability, 52, (2012), 1891 - 1894 doi:10.1016/j.microrel.2012.06.015. BibTeX
418.	N. Neophytou, H. Kosina: "Numerical Study of the Thermoelectric Power Factor in Ultra-Thin Si Nanowires"; Journal of Computational Electronics, 11, (invited) (2012), 29 - 44 doi:10.1007/s10825-012-0383-1. BibTeX
417.	N. Neophytou, H. Kosina: "On the Interplay between Electrical Conductivity and Seebeck Coefficient in Ultra-Narrow Silicon Nanowires"; Journal of Electronic Materials, 41, (2012), 1305 - 1311 doi:10.1007/s11664-011-1891-7. BibTeX
416.	H. Nematian, M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina: "Optical Properties of Armchair Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Lattices"; Journal of Applied Physics, 111, (2012), 093512-1 - 093512-6 doi:10.1063/1.4710988. BibTeX
415.	S. Vitanov, V. Palankovski, S. Maroldt, R. Quay, S. Murad, T. Rödle, S. Selberherr: "Physics-Based Modeling of GaN HEMTs"; IEEE Transactions on Electron Devices, 59, (2012), 685 - 693 doi:10.1109/TED.2011.2179118. BibTeX
414.	A. Starkov, O. Pakhomov, I. Starkov: "Solid-State Cooler: New Opportunities"; Ferroelectrics, 430, (2012), 108 - 114 doi:10.1080/00150193.2012.677730. BibTeX
413.	T. Grasser: "Stochastic Charge Trapping in Oxides: From Random Telegraph Noise to Bias Temperature Instabilities"; Microelectronics Reliability, 52, (invited) (2012), 39 - 70 doi:10.1016/j.microrel.2011.09.002. BibTeX
412.	H. Karamitaheri, N. Neophytou, M. Pourfath, H. Kosina: "Study of Thermal Properties of Graphene-Based Structures using the Force Constant Method"; Journal of Computational Electronics, 11, (invited) (2012), 14 - 21 doi:10.1007/s10825-011-0380-9. BibTeX
411.	Z. Stanojevic, V. Sverdlov, O. Baumgartner, H. Kosina: "Subband Engineering in N-Type Silicon Nanowires using Strain and Confinement"; Solid-State Electronics, 70, (2012), 73 - 80 doi:10.1016/j.sse.2011.11.022. BibTeX
410.	D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr: "Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built with InAs and Si Channels"; Solid-State Electronics, 71, (2012), 25 - 29 doi:10.1016/j.sse.2011.10.015. BibTeX
409.	R. Orio, H. Ceric, S. Selberherr: "A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects"; Microelectronics Reliability, 51, (2011), 1573 - 1577 doi:10.1016/j.microrel.2011.07.049. BibTeX
408.	R. Heinzl, P. Schwaha: "A Generic Topology Library"; Science of Computer Programming, 76, (2011), 324 - 346 doi:10.1016/j.scico.2009.09.007. BibTeX
407.	I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements"; Solid State Phenomena, 178-179, (2011), 267 - 272 doi:10.4028/www.scientific.net/SSP.178-179.267. BibTeX
406.	S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser: "An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation"; Microelectronics Reliability, 51, (2011), 1525 - 1529 doi:10.1016/j.microrel.2011.07.089. BibTeX
405.	A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr: "An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene Nanoribbons"; IEEE Transactions on Electron Devices, 58, (2011), 3725 - 3735 doi:10.1109/TED.2011.2163719. BibTeX
404.	N. Neophytou, H. Kosina: "Atomistic Simulations of Low-Field Mobility in Si Nanowires: Influence of Confinement and Orientation"; Physical Review B, 84, (2011), 085313-1 - 085313-15 doi:10.1103/PhysRevB.84.085313. BibTeX
403.	W. Gös, F. Schanovsky, H. Reisinger, B. Kaczer, T. Grasser: "Bistable Defects as the Cause for NBTI and RTN"; Solid State Phenomena, 178-179, (invited) (2011), 473 - 482 doi:10.4028/www.scientific.net/SSP.178-179.473. BibTeX
402.	M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, J. Franco, L. Ragnarsson, T. Grasser, G. Groeseneken: "Depth Localization of Positive Charge Trapped in Silicon Oxynitride Field Effect Transistors after Positive and Negative Gate Bias Temperature Stress"; Applied Physics Letters, 98, (2011), 183506-1 - 183506-3 doi:10.1063/1.3586780. BibTeX
401.	N. Neophytou, H. Kosina: "Effects of Confinement and Orientation on the Thermoelectric Power Factor of Silicon Nanowires"; Physical Review B, 83, (2011), 245305-1 - 245305-16 doi:10.1103/PhysRevB.83.245305. BibTeX
400.	H. Ceric, S. Selberherr: "Electromigration in Submicron Interconnect Features of Integrated Circuits"; Materials Science and Engineering R-Reports, 71, (2011), 53 - 86 doi:10.1016/j.mser.2010.09.001. BibTeX
399.	H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "Geometrical Effects on the Thermoelectric Properties of Ballistic Graphene Antidot Lattices"; Journal of Applied Physics, 110, (2011), 054506-1 - 054506-6 doi:10.1063/1.3629990. BibTeX
398.	H. Karamitaheri, M. Pourfath, M. Pazoki, R. Faez, H. Kosina: "Graphene-Based Antidots for Thermoelectric Applications"; Journal of the Electrochemical Society, 158, (2011), K213 - K216 doi:10.1149/2.025112jes. BibTeX
397.	J. Lorenz, E. Bär, T. Clees, R. Jancke, C. Salzig, S. Selberherr: "Hierarchical Simulation of Process Variations and their Impact on Circuits and Systems: Methodology"; IEEE Transactions on Electron Devices, 58, (invited) (2011), 2218 - 2226 doi:10.1109/TED.2011.2150225. BibTeX
396.	J. Lorenz, E. Bär, T. Clees, P. Evanschitzky, R. Jancke, C. Kampen, U. Paschen, C. Salzig, S. Selberherr: "Hierarchical Simulation of Process Variations and their Impact on Circuits and Systems: Results"; IEEE Transactions on Electron Devices, 58, (invited) (2011), 2227 - 2234 doi:10.1109/TED.2011.2150226. BibTeX
395.	N. Neophytou, H. Kosina: "Hole Mobility Increase in Ultra-Narrow Si Channels under Strong (110) Surface Confinement"; Applied Physics Letters, 99, (2011), 092110-1 - 092110-3 doi:10.1063/1.3631680. BibTeX
394.	I. Starkov, S. E. Tyaginov, H. Enichlmair, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser: "Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment"; Journal of Vacuum Science & Technology B, 29, (2011), 01AB09-1 - 01AB09-8 doi:10.1116/1.3534021. BibTeX
393.	G. Pobegen, T. Aichinger, T. Grasser, M. Nelhiebel: "Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs"; Microelectronics Reliability, 51, (2011), 1530 - 1534 doi:10.1016/j.microrel.2011.06.024. BibTeX
392.	H. Rabiee Golgir, R. Faez, M. Pazoki, H. Karamitaheri, R. Sarvari: "Investigation of Quantum Conductance in Semiconductor Single-Wall Carbon Nanotubes: Effect of Strain and Impurity"; Journal of Applied Physics, 110, (2011), 064320-1 - 064320-6 doi:10.1063/1.3641981. BibTeX
391.	F. Schanovsky, W. Gös, T. Grasser: "Multiphonon Hole Trapping from First Principles"; Journal of Vacuum Science & Technology B, 29, (2011), 01A201-1 - 01A201-5 doi:10.1116/1.3533269. BibTeX
390.	A. Garcia-Barrientos, V. Palankovski: "Numerical Simulations of Amplification of Space Charge Waves in n-InP Films"; Materials Science and Engineering B, 176, (2011), 1368 - 1372 doi:10.1016/j.mseb.2011.02.014. BibTeX
389.	A. Garcia-Barrientos, V. Palankovski: "Numerical Simulations of Space Charge Waves in InP Films and Microwave Frequency Conversion under Negative Differential Conductivity"; Applied Physics Letters, 98, (2011), 072110-1 - 072110-3 doi:10.1063/1.3555467. BibTeX
388.	J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, Ph. Hehenberger, T. Grasser, J. Mitard, G. Eneman, T. Y. Hoffmann, G. Groeseneken: "On the Impact of the Si Passivation Layer Thickness on the NBTI of Nanoscaled Si_0.45Ge_0.55 pMOSFETs"; Microelectronic Engineering, 88, (2011), 1388 - 1391 doi:10.1016/j.mee.2011.03.065. BibTeX
387.	A. S. Starkov, O. V. Pakhomov, I. Starkov: "Parametric Enhancement of Electrocaloric Effect by Periodically Varying External Field"; Technical Physics Letters, 79, (2011), 1139 - 1141 doi:10.1134/S1063785011120133. BibTeX
386.	N. Manavizadeh, F. Raissi, E.A. Soleimani, M. Pourfath, S. Selberherr: "Performance Assessment of Nanoscale Field Effect Diodes"; IEEE Transactions on Electron Devices, 58, (2011), 2378 - 2384 doi:10.1109/TED.2011.2152844. BibTeX
385.	O. Baumgartner, V. Sverdlov, T. Windbacher, S. Selberherr: "Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Thin Films"; IEEE Transactions on Nanotechnology, 10, (2011), 737 - 743 doi:10.1109/TNANO.2010.2074211. BibTeX
384.	B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. Cho, E. Simoen, G. Groeseneken: "Recent Trends in Bias Temperature Instability"; Journal of Vacuum Science & Technology B, 29, (invited) (2011), 01AB01-1 - 01AB01-7. BibTeX
383.	A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Reduction of Switching Time in Pentalayer Magnetic Tunnel Junctions with a Composite-Free Layer"; Physica Status Solidi - Rapid Research Letters, 5, (2011), 420 - 422 doi:10.1002/pssr.201105376. BibTeX
382.	A. Makarov, V. Sverdlov, S. Selberherr: "Stochastic Model of the Resistive Switching Mechanism in Bipolar Resistive Random Access Memory: Monte Carlo Simulations"; Journal of Vacuum Science & Technology B, 29, (2011), 01AD03-1 - 01AD03-5 doi:10.1116/1.3521503. BibTeX
381.	J. Cervenka, H. Kosina, S. Selberherr, J. Zhang, N. Hrauda, J. Stangl, G. Bauer, G. Vastola, A. Marzegalli, F. Montalenti, L. Miglio: "Strained MOSFETs on Ordered SiGe Dots"; Solid-State Electronics, 65-66, (2011), 81 - 87 doi:10.1016/j.sse.2011.06.041. BibTeX
380.	N. Neophytou, G. Klimeck, H. Kosina: "Subband Engineering for P-Type Silicon Ultra-Thin Layers for Increased Carrier Velocities"; Journal of Applied Physics, 109, (2011), 053721-1 - 053721-6 doi:10.1063/1.3556435. BibTeX
379.	M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, M. Cho, T. Grasser, G. Groeseneken: "Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature Stress"; Journal of Vacuum Science & Technology B, 29, (2011), 01AA04-1 - 01AA04-5 doi:10.1116/1.3532947. BibTeX
378.	A. Dedyk, Y. Pavlova, S. Karmanenko, A. Semenov, D. Semikin, O. Pakhomov, A. Starkov, I. Starkov: "Temperature Hysteresis of the Capacitance Dependence C(T) for Ferroelectric Ceramics"; Journal of Vacuum Science & Technology B, 29, (2011), 01A501-1 - 01A501-5 doi:10.1116/1.3532944. BibTeX
377.	M. Toledano-Luque, B. Kaczer, E. Simoen, Ph. J. Roussel, A. Veloso, T. Grasser, G. Groeseneken: "Temperature and Voltage Dependences of the Capture and Emission Times of Individual Traps in High-k Dielectrics"; Microelectronic Engineering, 88, (2011), 1243 - 1246 doi:10.1016/j.mee.2011.03.097. BibTeX
376.	K. Rupp, S. Selberherr: "The Economic Limit to Moore's Law"; IEEE Transactions on Semiconductor Manufacturing, 24, (2011), 1 - 4 doi:10.1109/TSM.2010.2089811. BibTeX
375.	T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, M. Toledano-Luque, M. Nelhiebel: "The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps"; IEEE Transactions on Electron Devices, 58, (invited) (2011), 3652 - 3666. BibTeX
374.	N. Neophytou, H. Kosina: "Thermoelectric Properties of Ultra Scaled Silicon Nanowires Using the sp3d5s-SO Atomistic Tight-Binding Model and Boltzmann Transport"; Journal of Electronic Materials, 40, (2011), 753 - 758 doi:10.1007/s11664-011-1542-z. BibTeX*
373.	G. Milovanovic, H. Kosina: "A Semiclassical Transport Model for Quantum Cascade Lasers based on the Pauli Master Equation"; Journal of Computational Electronics, 9, (2010), 211 - 217 doi:10.1007/s10825-010-0325-8. BibTeX
372.	F. Schanovsky, W. Gös, T. Grasser: "An Advanced Description of Oxide Traps in MOS Transistors and its Relation to DFT"; Journal of Computational Electronics, 9, (invited) (2010), 135 - 140 doi:10.1007/s10825-010-0323-x. BibTeX
371.	N. Neophytou, M. Wagner, H. Kosina, S. Selberherr: "Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model"; Journal of Electronic Materials, 39, (2010), 1902 - 1908 doi:10.1007/s11664-009-1035-5. BibTeX
370.	A. Lugstein, M. Steinmair, A. Steiger-Thirsfeld, H. Kosina, E. Bertagnolli: "Anomalous Piezoresistance Effect in Ultrastrained Silicon Nanowires"; Nano Letters, 10, (2010), 3204 - 3208 doi:10.1021/nl102179c. BibTeX
369.	R. Huang, A. Taylor, S. Himmelsbach, H. Ceric, T. Detzel: "Apparatus for Measuring Local Stress of Metallic Films, Using an Array of Parallel Laser Beams during Rapid Thermal Processing"; Measurement Science & Technology, 21, (2010), 55702 - 55710. BibTeX
368.	M. Nedjalkov, H. Kosina, P. Schwaha: "Device Modeling in the Wigner Picture"; Journal of Computational Electronics, 9, (2010), 218 - 223 doi:10.1007/s10825-010-0316-9. BibTeX
367.	A. S. Starkov, O. V. Pakhomov, I. Starkov: "Effect of Thermal Phenomena on a Second-Order Phase Transition in the Landau-Ginzburg Model"; JETP Letters, 91, (2010), 507 - 511. BibTeX
366.	S. Maroldt, D. Wiegner, S. Vitanov, V. Palankovski, R. Quay, O. Ambacher: "Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz"; IEICE Transactions on Electronics, E93-C, (2010), 1238 - 1244. BibTeX
365.	S. E. Tyaginov, M. Vexler, A. El Hdiy, K. Gacem, V Zaporojtchenko: "Electrical Methods for Estimating the Correlation Length of Insulator Thickness Fluctuations in MIS Tunnel Structures"; Materials Science in Semiconductor Processing, 13, (2010), 405 - 410 doi:10.1016/j.mssp.2011.07.003. BibTeX
364.	T. Windbacher, V. Sverdlov, O. Baumgartner, S. Selberherr: "Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 1 Analytical Consideration and Strain-Induced Valley Splitting"; Solid-State Electronics, 54, (2010), 137 - 142 doi:10.1016/j.sse.2009.12.008. BibTeX
363.	O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina: "Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 2 Efficient Self-Consistent Numerical Solution of the k.p Schrödinger Equation"; Solid-State Electronics, 54, (2010), 143 - 148 doi:10.1016/j.sse.2009.12.010. BibTeX
362.	T. Aichinger, M. Nelhiebel, T. Grasser: "Energetic Distribution of Oxide Traps created under Negative Bias Temperature Stress and their Relation to Hydrogen"; Applied Physics Letters, 96, (2010), 133511-1 - 133511-3. BibTeX
361.	S. Vitanov, V. Palankovski, S. Maroldt, R. Quay: "High-Temperature Modeling of AlGaN/GaN HEMTs"; Solid-State Electronics, 54, (2010), 1105 - 1112 doi:10.1016/j.sse.2010.05.026. BibTeX
360.	T. Aichinger, M. Nelhiebel, S. Einspieler, T. Grasser: "In Situ Poly Heater-A Reliable Tool for Performing Fast and Defined Temperature Switches on Chip"; IEEE Transactions on Device and Materials Reliability, 10, (2010), 3 - 8. BibTeX
359.	S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Microelectronics Reliability, 50, (2010), 1267 - 1272 doi:10.1016/j.microrel.2010.0. BibTeX
358.	N. Neophytou, H. Kosina: "Large Enhancement in Hole Velocity and Mobility in p-type [110] and [111] Silicon Nanowires by Cross Section Scaling: An Atomistic Analysis"; Nano Letters, 10, (2010), 4913 - 4919 doi:10.1021/nl102875k. BibTeX
357.	K. Rupp, A. Jüngel, T. Grasser: "Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation for Semiconductors"; Journal of Computational Physics, 229, (2010), 8750 - 8765. BibTeX
356.	J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair: "Observations of Negative Bias Temperature Instability Defect Generation via On The Fly Electron Spin Resonance"; Applied Physics Letters, 96, (2010), 223509-1 - 223509-3 doi:10.1063/1.3428783. BibTeX
355.	T. Aichinger, M. Nelhiebel, S. Einspieler, T. Grasser: "Observing Two Stage Recovery of Gate Oxide Damage Created under Negative Bias Temperature Stress"; Journal of Applied Physics, 107, (2010), 024508-1 - 024508-8. BibTeX
354.	N. Neophytou, S. Kim, G. Klimeck, H. Kosina: "On the Bandstructure Velocity and Ballistic Current of Ultra-Narrow Silicon Nanowire Transistors as a Function of Cross Section Size, Orientation, and Bias"; Journal of Applied Physics, 107, (2010), 113701-1 - 113701-9 doi:10.1063/1.3372764. BibTeX
353.	R. Orio, H. Ceric, S. Selberherr: "Physically based Models of Electromigration: From Black´s Equation to Modern TCAD Models"; Microelectronics Reliability, 50, (invited) (2010), 775 - 789 doi:10.1016/j.microrel.2010.01.007. BibTeX
352.	B. Kaczer, Ph. J. Roussel, T. Grasser, G. Groeseneken: "Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI"; IEEE Electron Device Letters, 31, (2010), 411 - 413 doi:10.1109/LED.2010.2044014. BibTeX
351.	A. Makarov, V. Sverdlov, S. Selberherr: "Stochastic Modeling of Bipolar Resistive Switching in Metal-Oxide based Memory by Monte Carlo Technique"; Journal of Computational Electronics, 9, (2010), 146 - 152 doi:10.1007/s10825-010-0317-8. BibTeX
350.	R. Huang, W. Robl, H. Ceric, T. Detzel, G. Dehm: "Stress, Sheet Resistance, and Microstructure Evolution of Electroplated Cu Films During Self-Annealing"; IEEE Transactions on Device and Materials Reliability, 10, (2010), 47 - 54 doi:10.1109/TDMR.2009.2032768. BibTeX
349.	K. Rupp, S. Selberherr: "The Economic Limit to Moore´s Law"; Proceedings of the IEEE, 98, (2010), 351 - 353 doi:10.1109/JPROC.2010.2040205. BibTeX
348.	O. Ertl, S. Selberherr: "Three-Dimensional Level Set Based Bosch Process Simulations using Ray Tracing for Flux Calculation"; Microelectronic Engineering, 87, (2010), 20 - 29 doi:10.1016/j.mee.2009.05.011. BibTeX
347.	T. Grasser, H. Reisinger, P.-J. Wagner, B. Kaczer: "Time-Dependent Defect Spectroscopy for Characterization of Border Traps in Metal-Oxide-Semiconductor Transistors"; Physical Review B, 82, (2010), 245318-1 - 245318-10 doi:10.1103/PhysRevB.82.245318. BibTeX
346.	T. Aichinger, M. Nelhiebel, T. Grasser: "A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTI"; IEEE Transactions on Electron Devices, 56, (2009), 3018 - 3026. BibTeX
345.	H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects"; IEEE Transactions on Device and Materials Reliability, 9, (2009), 9 - 19 doi:10.1109/TDMR.2008.2000893. BibTeX
344.	O. Ertl, S. Selberherr: "A Fast Level Set Framework for Large Three-Dimensional Topography Simulations"; Computer Physics Communications, 180, (2009), 1242 - 1250 doi:10.1016/j.cpc.2009.02.002. BibTeX
343.	H. Reisinger, R. Vollertsen, P.-J. Wagner, T. Huttner, A. Martin, S. Aresu, W. Gustin, T. Grasser, C. Schlünder: "A Study of NBTI and Short-Term Threshold Hysteresis of Thin Nitrided and Thick Non-Nitrided Oxides"; IEEE Transactions on Device and Materials Reliability, 9, (2009), 106 - 114 doi:10.1109/TDMR.2009.2021389. BibTeX
342.	R. Orio, H. Ceric, S. Selberherr: "Analysis of Electromigration in Dual-Damascene Interconnect Structures"; Journal Integrated Circuits and Systems, 4, (2009), 67 - 72 doi:10.29292/jics.v4i2.300. BibTeX
341.	C. Poschalko, S. Selberherr: "Cavity Model for the Slot Radiation of an Enclosure Excited by Printed Circuit Board Traces With Different Loads"; IEEE Transactions on Electromagnetic Compatibility, 51, (2009), 18 - 24 doi:10.1109/TEMC.2008.2008815. BibTeX
340.	M. Pourfath, H. Kosina: "Computational Study of Carbon-Based Electronics"; Journal of Computational Electronics, 8, (2009), 427 - 440 doi:10.1007/s10825-009-0285-z. BibTeX
339.	S. E. Tyaginov, M. Vexler, N. S. Sokolov, S. M. Suturin, A. Banshchikov, T. Grasser, B. Meinerzhagen: "Determination of Correlation Length for Thickness Fluctuations in Thin Oxide and Fluoride Films"; Journal of Physics D: Applied Physics, 42, (2009), 1 - 6 doi:10.1088/0022-3727/42/11/115307. BibTeX
338.	M. Vexler, N. S. Sokolov, S. M. Suturin, A. Banshchikov, S. E. Tyaginov, T. Grasser: "Electrical Characterization and Modeling of the Au/CaF₂/nSi(111) Sructures with High-Quality Tunnel-Thin Fluoride Layer"; Journal of Applied Physics, 105, (2009), 1 - 6 doi:10.1063/1.3110066. BibTeX
337.	T. Grasser, B. Kaczer: "Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs"; IEEE Transactions on Electron Devices, 56, (2009), 1056 - 1062 doi:10.1109/TED.2009.2015160. BibTeX
336.	R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr: "GUIDE: Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment"; International Journal of Parallel, Emergent and Distributed Systems, 24, (2009), 505 - 520 doi:10.1080/17445760902758545. BibTeX
335.	S. E. Tyaginov, V. Sverdlov, I. Starkov, W. Gös, T. Grasser: "Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate"; Microelectronics Reliability, 49, (2009), 998 - 1002 doi:10.1016/j.microrel.2009.06.018. BibTeX
334.	B. Kaczer, A. Veloso, Ph. J. Roussel, T. Grasser, G. Groeseneken: "Investigation of Bias-Temperature Instability in Work-Function-Tuned High-k/Metal-Gate Stacks"; Journal of Vacuum Science & Technology B, 27, (2009), 459 - 462. BibTeX
333.	V. Sverdlov, T. Windbacher, F. Schanovsky, S. Selberherr: "Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress"; Journal Integrated Circuits and Systems, 4, (2009), 55 - 60 doi:10.29292/jics.v4i2.298. BibTeX
332.	V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr: "Modeling of Modern MOSFETs with Strain"; Journal of Computational Electronics, 8, (invited) (2009), 192 - 208 doi:10.1007/s10825-009-0291-1. BibTeX
331.	A. Garcia-Barrientos, V. Grimalsky, E. Gutierrez-Dominguez, V. Palankovski: "Nonstationary Effects of the Space Charge in Semiconductor Structures"; Journal of Applied Physics, 105, (2009), 074501-1 - 074501-6 doi:10.1063/1.3093689. BibTeX
330.	G. Milovanovic, O. Baumgartner, H. Kosina: "On Open Boundary Conditions for Quantum Cascade Structures"; Optical and Quantum Electronics, 41, (2009), 921 - 932 doi:10.1007/s11082-010-9406-y. BibTeX
329.	Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser: "On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress"; Microelectronics Reliability, 49, (2009), 1013 - 1017 doi:10.1016/j.microrel.2009.06.040. BibTeX
328.	P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr: "Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications"; International Journal of Parallel, Emergent and Distributed Systems, 24, (2009), 539 - 549 doi:10.1080/17445760902758552. BibTeX
327.	T. Grasser, B. Kaczer, W. Gös, T. Aichinger, Ph. Hehenberger, M. Nelhiebel: "Understanding Negative Bias Temperature Instability in the Context of Hole Trapping"; Microelectronic Engineering, 86, (invited) (2009), 1876 - 1882. BibTeX
326.	M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser: "A 2D Non-Parabolic Six-Moments Model"; Solid-State Electronics, 52, (2008), 1606 - 1609 doi:10.1016/j.sse.2008.06.010. BibTeX
325.	T. Grasser, P.-J. Wagner, Ph. Hehenberger, W. Gös, B. Kaczer: "A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability"; IEEE Transactions on Device and Materials Reliability, 8, (2008), 526 - 535 doi:10.1109/TDMR.2008.2002353. BibTeX
324.	K. Martens, B. Kaczer, T. Grasser, B. Jaeger, M. Meuris, H.E. Maes, G. Groeseneken: "Applicability of Charge Pumping on Germanium MOSFETs"; IEEE Electron Device Letters, 29, (2008), 1364 - 1366 doi:10.1109/LED.2008.2007582. BibTeX
323.	W. Gös, M. Karner, V. Sverdlov, T. Grasser: "Charging and Discharging of Oxide Defects in Reliability Issues"; IEEE Transactions on Device and Materials Reliability, 8, (2008), 491 - 500 doi:10.1109/TDMR.2008.2005247. BibTeX
322.	V. Sverdlov, H. Kosina, S. Selberherr: "Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon"; Proceedings of SPIE, 70251I, (2008), 70251I-1 - 70251I-8 doi:10.1117/12.802503. BibTeX
321.	V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr: "Current Transport Models for Nanoscale Semiconductor Devices"; Materials Science and Engineering R-Reports, 58, (2008), 228 - 270 doi:10.1016/j.mser.2007.11.001. BibTeX
320.	T. Grasser, W. Gös, B. Kaczer: "Dispersive Transport and Negative Bias Temperature Instability: Boundary Conditions, Initial Conditions, and Transport Models"; IEEE Transactions on Device and Materials Reliability, 8, (invited) (2008), 79 - 97 doi:10.1109/TDMR.2007.912779. BibTeX
319.	G. Karlowatz, W. Wessner, H. Kosina: "Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation"; Mathematics and Computers in Simulation, 79, (2008), 972 - 979 doi:10.1016/j.matcom.2008.02.021. BibTeX
318.	R. Orio, H. Ceric, S. Selberherr: "Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress"; Journal of Computational Electronics, 7, (2008), 128 - 131 doi:10.1007/s10825-008-0211-9. BibTeX
317.	V. Sverdlov, H. Kosina, S. Selberherr: "Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory"; Journal of Computational Electronics, 7, (2008), 164 - 167 doi:10.1007/s10825-008-0177-7. BibTeX
316.	V. Sverdlov, S. Selberherr: "Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond"; Solid-State Electronics, 52, (2008), 1861 - 1866 doi:10.1016/j.sse.2008.06.054. BibTeX
315.	M. Pourfath, H. Kosina: "Formalism Application of the Non-Equilibrium Green's Function for the Numerical Analysis of Carbon Nanotube Fets"; Journal of Computational and Theoretical Nanoscience, 5, (2008), 1128 - 1137 doi:10.1166/jctn.2008.011. BibTeX
314.	P. Lenahan, B. Knowlton, J. Conley, B. Tonti, J. Suehle, T. Grasser: "Introduction to the Special Issue on the 2007 International Integrated Reliability Workshop"; IEEE Transactions on Device and Materials Reliability, 8, (2008), 490. BibTeX
313.	K. Raleva, D. Vasileska, S.M. Goodnick, M. Nedjalkov: "Modeling Thermal Effects in Nanodevices"; IEEE Transactions on Electron Devices, 55, (2008), 1306 - 1316. BibTeX
312.	S. Vainshtein, V. Yuferev, V. Palankovski, D. Ong, J. Kostamovaara: "Negative Differential Mobility in GaAs at Ultrahigh Fields: Comparison between an Experiment and Simulations"; Applied Physics Letters, 92, (2008), 062114-1 - 062114-3 doi:10.1063/1.2870096. BibTeX
311.	S. Vitanov, V. Palankovski: "Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study"; Solid-State Electronics, 52, (2008), 1791 - 1795 doi:10.1016/j.sse.2008.07.011. BibTeX
310.	M. Pourfath, H. Kosina, S. Selberherr: "Numerical Study of Quantum Transport in Carbon Nanotube Transistors"; Mathematics and Computers in Simulation, 79, (2008), 1051 - 1059 doi:10.1016/j.matcom.2007.09.004. BibTeX
309.	T. Aichinger, M. Nelhiebel, T. Grasser: "On the Temperature Dependence of NBTI Recovery"; Microelectronics Reliability, 48, (2008), 1178 - 1184 doi:10.1016/j.microrel.2008.06.018. BibTeX
308.	M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser: "Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs"; Journal of Computational Electronics, 7, (2008), 168 - 173 doi:10.1007/s10825-008-0239-x. BibTeX
307.	M. Nedjalkov, D. Vasileska: "Semi-Discrete 2D Wigner-Particle Approach"; Journal of Computational Electronics, 7, (2008), 222 - 225 doi:10.1007/s10825-008-0197-3. BibTeX
306.	M. Pourfath, H. Kosina, S. Selberherr: "The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance"; Journal of Physics: Conference Series, 109, (2008), 1 - 5 doi:10.1088/1742-6596/109/1/012029. BibTeX
305.	E. Ungersböck, W. Gös, S. Dhar, H. Kosina, S. Selberherr: "The Effect of Uniaxial Stress on Band Structure and Electron Mobility of Silicon"; Mathematics and Computers in Simulation, 79, (2008), 1071 - 1077 doi:10.1016/j.matcom.2007.10.004. BibTeX
304.	J. Cervenka, H. Ceric, S. Selberherr: "Three-Dimensional Simulation of Sacrificial Etching"; Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems, 14, (2008), 665 - 671 doi:10.1007/s00542-007-0491-1. BibTeX
303.	V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr: "Two-Band k.p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility"; Solid-State Electronics, 52, (2008), 1563 - 1568 doi:10.1016/j.sse.2008.06.019. BibTeX
302.	M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, W. Gös, M. Vasicek, O. Baumgartner, Ch. Kernstock, K. Schnass, G. Zeiler, T. Grasser, H. Kosina, S. Selberherr: "A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications"; Journal of Computational Electronics, 6, (2007), 179 - 182 doi:10.1007/s10825-006-0077-7. BibTeX
301.	R. Wittmann, S. Selberherr: "A Study of Ion Implantation into Crystalline Germanium"; Solid-State Electronics, 51, (2007), 982 - 988 doi:10.1016/j.sse.2007.03.019. BibTeX
300.	M. Movahhedi, A. Abdipour, A. Nentchev, M. Dehghan, S. Selberherr: "Alternating-Direction Implicit Formulation of the Finite-Element Time-Domain Method"; IEEE Transactions on Microwave Theory and Techniques, 55, (2007), 1322 - 1331 doi:10.1109/TMTT.2007.897777. BibTeX
299.	L. Li, G. Meller, H. Kosina: "Analytical Conductivity Model for Doped Organic Semiconductors"; Journal of Applied Physics, 101, (2007), 1 - 4 doi:10.1063/1.2472282. BibTeX
298.	L. Li, G. Meller, H. Kosina: "Carrier Concentration Dependence of the Mobility in Organic Semiconductors"; Synthetic Metals, 157, (2007), 243 - 246 doi:10.1016/j.synthmet.2007.03.002. BibTeX
297.	S. Holzer, A. Sheikholeslami, M. Karner, T. Grasser, S. Selberherr: "Comparison of Deposition Models for a TEOS LPCVD Process"; Microelectronics Reliability, 47, (2007), 623 - 625 doi:10.1016/j.microrel.2007.01.058. BibTeX
296.	P. Palestri, N. Barin, D. Brunel, C. Busseret, A. Campera, P. Childs, F. Driussi, C. Fiegna, G. Fiori, R. Gusmeroli, G. Iannaccone, M. Karner, H. Kosina, E. Langer, C. Majkusiak, C. Monzio Compagnoni, A. Poncet, E. Sangiorgi, L. Selmi, A. Spinelli, J. Walczak: "Comparison of Modeling Approaches for the Capacitance-Voltage and Current-Voltage Characteristics of Advanced Gate Stacks"; IEEE Transactions on Electron Devices, 54, (2007), 106 - 114 doi:10.1109/TED.2006.887226. BibTeX
295.	L. Li, G. Meller, H. Kosina: "Diffusion-Controlled Charge Injection Model for Organic Light-Emitting Diodes"; Applied Physics Letters, 91, (2007), 1 - 3 doi:10.1063/1.2801702. BibTeX
294.	M. Spevak, T. Grasser: "Discretization of Macroscopic Transport Equations on Non-Cartesian Coordinate Systems"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 26, (2007), 1408 - 1416. BibTeX
293.	M. Pourfath, H. Kosina, S. Selberherr: "Dissipative Transport in CNTFETs"; Journal of Computational Electronics, 6, (2007), 321 - 324 doi:10.1007/s10825-006-0113-7. BibTeX
292.	S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr: "Electron Mobility Model for <110> Stressed Silicon Including Strain-Dependent Mass"; IEEE Transactions on Nanotechnology, 6, (2007), 97 - 100 doi:10.1109/TNANO.2006.888533. BibTeX
291.	C. Heitzinger, Ch. Ringhofer, S. Selberherr: "Finite Difference Solutions of the Nonlinear Schrödinger Equation and their Conservation of Physical Quantities"; Communications in Mathematical Sciences, 5, (2007), 779 - 788 doi:10.4310/CMS.2007.v5.n4.a2. BibTeX
290.	M. Pourfath, H. Kosina, S. Selberherr: "Geometry Optimization for Carbon Nanotube Transistors"; Solid-State Electronics, 51, (2007), 1565 - 1571 doi:10.1016/j.sse.2007.09.021. BibTeX
289.	T. Krishnamohan, C. Jungemann, D. Kim, E. Ungersböck, S. Selberherr, A.-T Pham, B. Meinerzhagen, P. Wong, Y. Nishida, K. Saraswat: "High Performance, Uniaxially-Strained, Silicon and Germanium, Double-Gate p-MOSFETs"; Microelectronic Engineering, 84, (2007), 2063 - 2066 doi:10.1016/j.mee.2007.04.085. BibTeX
288.	L. Li, G. Meller, H. Kosina: "Influence of Traps on Charge Transport in Organic Semiconductors"; Solid-State Electronics, 51, (2007), 445 - 448 doi:10.1016/j.sse.2007.01.024. BibTeX
287.	G. Span, M. Wagner, T. Grasser, L. Holmgren: "Miniaturized TEG with Thermal Generation of Free Carriers"; Physica Status Solidi - Rapid Research Letters, 1, (2007), 241 - 243 doi:10.1002/pssr.200701171. BibTeX
286.	M. Nedjalkov, D. Vasileska, I. Dimov, G. Arsov: "Mixed Initial-Boundary Value Problem in Particle Modeling of Microelectronic Devices"; Monte Carlo Methods and Applications, 13, (2007), 299 - 331 doi:10.1515/MCMA.2007.017. BibTeX
285.	T. Grasser, S. Selberherr: "Modeling of Negative Bias Temperature Instability"; Journal of Telecommunications and Information Technology, 7, (invited) (2007), 92 - 102. BibTeX
284.	H. Kosina: "Nanoelectronic Device Simulation Based on the Wigner Function Formalism"; International Journal of High Speed Electronics and Systems, 17, (2007), 475 - 484 doi:10.1142/S0129156407004667. BibTeX
283.	R. Entner, T. Grasser, O. Triebl, H. Enichlmair, R. Minixhofer: "Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures"; Microelectronics Reliability, 47, (2007), 697 - 699. BibTeX
282.	M. Movahhedi, A. Abdipour, H. Ceric, A. Sheikholeslami, S. Selberherr: "Optimization of the Perfectly Matched Layer for the Finite-Element Time-Domain Method"; IEEE Microwave and Wireless Components Letters, 17, (2007), 10 - 12 doi:10.1109/LMWC.2006.887240. BibTeX
281.	E. Ungersböck, S. Dhar, G. Karlowatz, H. Kosina, S. Selberherr: "Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon"; Journal of Computational Electronics, 6, (2007), 55 - 58 doi:10.1007/s10825-006-0047-0. BibTeX
280.	A. Sheikholeslami, F. Parhami, H. Puchner, S. Selberherr: "Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers"; Journal of Physics: Conference Series, 61, (2007), 1051 - 1055 doi:10.1088/1742-6596/61/1/208. BibTeX
279.	M. Wagner, M. Karner, J. Cervenka, M. Vasicek, H. Kosina, S. Holzer, T. Grasser: "Quantum Correction for DG MOSFETs"; Journal of Computational Electronics, 5, (2007), 397 - 400 doi:10.1007/s10825-006-0032-7. BibTeX
278.	E. Ungersböck, S. Dhar, G. Karlowatz, V. Sverdlov, H. Kosina, S. Selberherr: "The Effect of General Strain on the Band Structure and Electron Mobility of Silicon"; IEEE Transactions on Electron Devices, 54, (2007), 2183 - 2190 doi:10.1109/TED.2007.902880. BibTeX
277.	M. Pourfath, H. Kosina: "The Effect of Phonon Scattering on the Switching Response of Carbon Nanotube Field-Effect Transistors"; Nanotechnology, 18, (2007), 424036 - 424041 doi:10.1088/0957-4484/18/42/424036. BibTeX
276.	V. Sverdlov, E. Ungersböck, H. Kosina: "Theoretical Electron Mobility Analysis in Thin-Body FETs: Dependence on Substrate Orientation and Biaxial Strain"; IEEE Transactions on Nanotechnology, 6, (2007), 334 - 340 doi:10.1109/TNANO.2007.894835. BibTeX
275.	M. Wagner, G. Span, S. Holzer, T. Grasser: "Thermoelectric Power Generation Using Large-Area Si/SiGe pn-Junctions with Varying Ge Content"; Semiconductor Science and Technology, 22, (2007), 173 - 176. BibTeX
274.	J. Cervenka, H. Ceric, S. Selberherr: "Three-Dimensional Simulation of Sacrificial Etching"; Proceedings of SPIE, 6589, (2007), 452 - 460 doi:10.1117/12.721979. BibTeX
273.	M. Pourfath, H. Kosina, S. Selberherr: "Tunneling CNTFETs"; Journal of Computational Electronics, 6, (2007), 243 - 246 doi:10.1007/s10825-006-0099-1. BibTeX
272.	M. Nedjalkov, D. Vasileska, E. Atanassov, V. Palankovski: "Ultrafast Wigner Transport in Quantum Wires"; Journal of Computational Electronics, 6, (2007), 235 - 238 doi:10.1007/s10825-006-0101-y. BibTeX
271.	M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr: "VSP - A Gate Stack Analyzer"; Microelectronics Reliability, 47, (2007), 704 - 708 doi:10.1016/j.microrel.2007.01.059. BibTeX
270.	O. Triebl, T. Grasser: "Vector Discretization Schemes in Technology CAD Environments"; Romanian Journal of Information Science and Technology, 10, (2007), 167 - 176. BibTeX
269.	V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr: "Volume Inversion Mobility in SOI MOSFETs for Different Thin Body Orientations"; Solid-State Electronics, 51, (2007), 299 - 305 doi:10.1016/j.sse.2007.01.022. BibTeX
268.	M. Pourfath, H. Kosina, S. Selberherr: "A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors"; Journal of Computational Electronics, 5, (2006), 155 - 159 doi:10.1007/s10825-006-8836-z. BibTeX
267.	Y. Kinkhabwala, V. Sverdlov, K. Likharev: "A Numerical Study of Coulomb Interaction Effects on 2D Hopping Transport"; Journal of Physics: Condensed Matter, 18, (2006), 2013 - 2027. BibTeX
266.	Y. Kinkhabwala, V. Sverdlov, A.N. Korotkov, K. Likharev: "A Numerical Study of Transport and Shot Noise in 2D Hopping"; Journal of Physics: Condensed Matter, 18, (2006), 1999 - 2012. BibTeX
265.	W. Wessner, J. Cervenka, C. Heitzinger, A. Hössinger, S. Selberherr: "Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25, (2006), 2129 - 2139 doi:10.1109/TCAD.2005.862750. BibTeX
264.	H. Kosina, S. Selberherr: "Device Simulation Demands of Upcoming Microelectronic Devices"; International Journal of High Speed Electronics and Systems, 16, (2006), 115 - 136 doi:10.1142/S0129156406003576. BibTeX
263.	M. Karner, A. Gehring, H. Kosina: "Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics"; Journal of Computational Electronics, 5, (2006), 161 - 165 doi:10.1007/s10825-006-8837-y. BibTeX
262.	J. Cervenka, W. Wessner, E. Al-Ani, T. Grasser, S. Selberherr: "Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25, (2006), 2118 - 2128 doi:10.1109/TCAD.2006.876514. BibTeX
261.	S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr: "High-Field Electron Mobility Model for Strained-Silicon Devices"; IEEE Transactions on Electron Devices, 53, (2006), 3054 - 3062 doi:10.1109/TED.2006.885639. BibTeX
260.	V. Sverdlov, H. Kosina, S. Selberherr: "Modeling Current Transport in Ultra-Scaled Field-Effect Transistors"; Microelectronics Reliability, 47, (invited) (2006), 11 - 19 doi:10.1016/j.microrel.2006.03.009. BibTeX
259.	E. Ungersböck, H. Kosina: "Monte Carlo Study of Electron Transport in Strained Silicon Inversion Layers"; Journal of Computational Electronics, 5, (2006), 79 - 83 doi:10.1007/s10825-006-8823-4. BibTeX
258.	M. Pourfath, H. Kosina, S. Selberherr: "Rigorous Modeling of Carbon Nanotube Transistors"; Journal of Physics: Conference Series, 38, (2006), 29 - 32 doi:10.1088/1742-6596/38/1/008. BibTeX
257.	V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr: "Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices"; Journal of Computational Electronics, 5, (2006), 447 - 450 doi:10.1007/s10825-006-0041-6. BibTeX
256.	G. Meller, L. Li, S. Holzer, H. Kosina: "Simulation of Carrier Injection and Propagation in Molecularly Disordered Systems"; Optical and Quantum Electronics, 38, (2006), 993 - 1004 doi:10.1007/s11082-006-9051-7. BibTeX
255.	L. Li, G. Meller, H. Kosina: "Temperature and Field-Dependence of Hopping Conduction in Organic Semiconductors"; Microelectronics Journal, 38, (2006), 47 - 51 doi:10.1016/j.mejo.2006.09.022. BibTeX
254.	M. Nedjalkov, D. Vasileska, D.K. Ferry, C. Jacoboni, Ch. Ringhofer, I. Dimov, V. Palankovski: "Wigner Transport Models of the Electron-Phonon Kinetics in Quantum Wires"; Physical Review B, 74, (2006), 035311-1 - 035311-18 doi:10.1103/PhysRevB.74.035311. BibTeX
253.	H. Kosina: "Wigner function approach to nano device simulation"; International Journal of Computational Science and Engineering, 2, (2006), 100 - 118 doi:10.1504/IJCSE.2006.012762. BibTeX
252.	C. Heitzinger, A. Sheikholeslami, J.M. Park, S. Selberherr: "A Method for Generating Structurally Aligned Grids for Semiconductor Device Simulation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 24, (2005), 1485 - 1491 doi:10.1109/TCAD.2005.852297. BibTeX
251.	S. Wagner, T. Grasser, C. Fischer, S. Selberherr: "An Advanced Equation Assembly Module"; Engineering with Computers, 21, (2005), 151 - 163 doi:10.1007/s00366-005-0319-5. BibTeX
250.	S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr: "Electron Mobility Model for Strained-Si Devices"; IEEE Transactions on Electron Devices, 52, (2005), 527 - 533 doi:10.1109/TED.2005.844788. BibTeX
249.	C. Jungemann, T. Grasser, B. Neinhüs, B. Meinerzhagen: "Failure of Moments-Based Transport Models in Nanoscale Devices Near Equilibrium"; IEEE Transactions on Electron Devices, 52, (2005), 2404 - 2408. BibTeX
248.	A. Gehring, S. Selberherr: "Gate Current Modeling for MOSFETs"; Journal of Computational and Theoretical Nanoscience, 2, (invited) (2005), 26 - 44 doi:10.1166/jctn.2005.002. BibTeX
247.	L.C. Castro, D.L. John, D.L. Pulfrey, M. Pourfath, A. Gehring, H. Kosina: "Method for Predicting f_T for Carbon Nanotube FETs"; IEEE Transactions on Nanotechnology, Vol. 4, (2005), 699 - 704 doi:10.1109/TNANO.2005.858603. BibTeX
246.	T. Ayalew, T. Grasser, H. Kosina, S. Selberherr: "Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices"; Materials Science Forum, 483-485, (2005), 845 - 848 doi:10.4028/www.scientific.net/MSF.483-485.845. BibTeX
245.	T. Grasser: "Non-Parabolic Macroscopic Transport Models for Semiconductor Device Simulation"; Physica A: Statistical Mechanics and its Applications, 349, (2005), 221 - 258. BibTeX
244.	T. Grasser, R. Kosik, C. Jungemann, H. Kosina, S. Selberherr: "Nonparabolic Macroscopic Transport Models for Device Simulation Based on Bulk Monte Carlo Data"; Journal of Applied Physics, 97, (2005), 093710-1 - 093710-12 doi:10.1063/1.1883311. BibTeX
243.	M. Pourfath, E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, W.J. Park, B.-H. Cheong: "Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors"; Journal of Computational Electronics, 4, (2005), 75 - 78 doi:10.1007/s10825-005-7111-z. BibTeX
242.	T. Ayalew, S.-C. Kim, T. Grasser, S. Selberherr: "Numerical Analysis of SiC Merged PiN Schottky Diodes"; Materials Science Forum, 483-485, (2005), 949 - 952 doi:10.4028/www.scientific.net/MSF.483-485.949. BibTeX
241.	S.-C. Kim, W. Bahng, N.-K. Kim, E.-D. Kim, T. Ayalew, T. Grasser, S. Selberherr: "Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication"; Materials Science Forum, 483-485, (2005), 793 - 796 doi:10.4028/www.scientific.net/MSF.483-485.793. BibTeX
240.	M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W.J. Park, H. Kosina, S. Selberherr: "Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors"; Microelectronic Engineering, 81, (2005), 428 - 433 doi:10.1016/j.mee.2005.03.043. BibTeX
239.	E. Ungersböck, M. Pourfath, H. Kosina, A. Gehring, B.-H. Cheong, W.J. Park, S. Selberherr: "Optimization of Single-Gate Carbon-Nanotube Field-Effect Transistors"; IEEE Transactions on Nanotechnology, 4, (2005), 533 - 538 doi:10.1109/TNANO.2005.851402. BibTeX
238.	V. Sverdlov, A. Gehring, H. Kosina, S. Selberherr: "Quantum Transport in Ultra-Scaled Double-Gate MOSFETs: A Wigner Function-Based Monte Carlo Approach"; Solid-State Electronics, 49, (2005), 1510 - 1515 doi:10.1016/j.sse.2005.07.013. BibTeX
237.	M. Pourfath, A. Gehring, E. Ungersböck, H. Kosina, S. Selberherr, B.-H. Cheong, W. Park: "Separated Carrier Injection Control in Carbon Nanotube Field-Effect Transistors"; Journal of Applied Physics, 97, (2005), 106103-1 - 106103-3 doi:10.1063/1.1897491. BibTeX
236.	S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser, S. Selberherr: "Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress"; Proceedings of SPIE, 5837, (2005), 380 - 387 doi:10.1117/12.608414. BibTeX
235.	A. Gehring, H. Kosina: "Wigner Function-Based Simulation of Quantum Transport in Scaled DG-MOSFETs Using a Monte Carlo Method"; Journal of Computational Electronics, 4, (2005), 67 - 70. BibTeX
234.	T. Grasser, R. Kosik, C. Jungemann, B. Meinerzhagen, H. Kosina, S. Selberherr: "A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices"; Journal of Computational Electronics, 3, (2004), 183 - 187 doi:10.1007/s10825-004-7041-1. BibTeX
233.	C. Heitzinger, Ch. Ringhofer: "A Note on the Symplectic Integration of the Nonlinear Schrödinger Equation"; Journal of Computational Electronics, 3, (2004), 33 - 44. BibTeX
232.	M. Nedjalkov, H. Kosina, E. Ungersböck, S. Selberherr: "A Quasi-Particle Model of the Electron-Wigner Potential Interaction"; Semiconductor Science and Technology, 19, (2004), 226 - 228 doi:10.1088/0268-1242/19/4/076. BibTeX
231.	M. Nedjalkov, S. Ahmed, D. Vasileska: "A Self-Consistent Event Biasing Scheme for Statistical Enhancement"; Journal of Computational Electronics, 3, (2004), 305 - 309. BibTeX
230.	T. Binder, C. Heitzinger, S. Selberherr: "A Study on Global and Local Optimization Techniques for TCAD Analysis Tasks"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 23, (2004), 814 - 822 doi:10.1109/TCAD.2004.828130. BibTeX
229.	C. Heitzinger, A. Hössinger, S. Selberherr: "An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results"; Mathematics and Computers in Simulation, 66, (2004), 219 - 230 doi:10.1016/j.matcom.2003.11.010. BibTeX
228.	R. Rodriguez-Torres, E. Gutierrez, R. Klima, S. Selberherr: "Analysis of Split-Drain MAGFETs"; IEEE Transactions on Electron Devices, 51, (2004), 2237 - 2245 doi:10.1109/TED.2004.839869. BibTeX
227.	V. Palankovski, S. Selberherr: "Critical Modeling Issues of SiGe Semiconductor Devices"; Journal of Telecommunications and Information Technology, 4, (invited) (2004), 15 - 25. BibTeX
226.	S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr: "Direct Extraction Feature for Scattering Parameters of SiGe-HBTs"; Applied Surface Science, 224, (2004), 365 - 369 doi:10.1016/j.apsusc.2003.09.035. BibTeX
225.	T. Ayalew, A. Gehring, T. Grasser, S. Selberherr: "Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination"; Microelectronics Reliability, 44, (2004), 1473 - 1478 doi:10.1016/j.microrel.2004.07.042. BibTeX
224.	A. Gehring, S. Selberherr: "Evolution of Current Transport Models for Engineering Applications"; Journal of Computational Electronics, 3, (2004), 149 - 155 doi:10.1007/s10825-004-7035-z. BibTeX
223.	S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr: "Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Fusing Structures"; Microelectronics Journal, 35, (2004), 805 - 810 doi:10.1016/j.mejo.2004.06.011. BibTeX
222.	C. Heitzinger, A. Sheikholeslami, F. Badrieh, H. Puchner, S. Selberherr: "Feature-Scale Process Simulation and Accurate Capacitance Extraction for the Backend of a 100-nm Aluminum/TEOS Process"; IEEE Transactions on Electron Devices, 51, (2004), 1129 - 1134 doi:10.1109/TED.2004.829868. BibTeX
221.	J.M. Park, R. Klima, S. Selberherr: "High-Voltage Lateral Trench Gate SOI-LDMOSFETs"; Microelectronics Journal, 35, (2004), 299 - 304 doi:10.1016/S0026-2692(03)00192-7. BibTeX
220.	A. Gehring, S. Selberherr: "Modeling of Tunneling Current and Gate Dielectric Reliability for Nonvolatile Memory Devices"; IEEE Transactions on Device and Materials Reliability, 4, (2004), 306 - 319 doi:10.1109/TDMR.2004.836727. BibTeX
219.	S. Smirnov, H. Kosina: "Monte Carlo Modeling of the Electron Mobility in Strained Si_1-xGe_x Layers on Arbitrarily Oriented Si_1-yGe_y Substrates"; Solid-State Electronics, 48, (invited) (2004), 1325 - 1335 doi:10.1016/j.sse.2004.01.014. BibTeX
218.	J.M. Park, S. Wagner, T. Grasser, S. Selberherr: "New SOI Lateral Power Devices with Trench Oxide"; Solid-State Electronics, 48, (2004), 1007 - 1015 doi:10.1016/j.sse.2003.12.015. BibTeX
217.	C. Heitzinger, S. Selberherr: "On the Simulation of the Formation and Dissolution of Silicon Self-Interstitial Clusters and the Corresponding Inverse Modeling Problem"; Microelectronics Journal, 35, (2004), 167 - 171 doi:10.1016/j.mejo.2003.09.014. BibTeX
216.	M. Nedjalkov, E. Atanassov, H. Kosina, S. Selberherr: "Operator-Split Method for Variance Reduction in Stochastic Solutions for the Wigner Equation"; Monte Carlo Methods and Applications, 10, (2004), 461 - 468 doi:10.1515/mcma.2004.10.3-4.461. BibTeX
215.	V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr: "Rigorous Modeling Approach to Numerical Simulation of SiGe HBTs"; Applied Surface Science, 224, (2004), 361 - 364 doi:10.1016/j.apsusc.2003.09.034. BibTeX
214.	V. Palankovski, S. Selberherr: "Rigorous Modeling of High-Speed Semiconductor Devices"; Microelectronics Reliability, 44, (invited) (2004), 889 - 897 doi:10.1016/j.microrel.2004.02.009. BibTeX
213.	Ch. Ringhofer, M. Nedjalkov, H. Kosina, S. Selberherr: "Semiclassical Approximation of Electron-Phonon Scattering Beyond Fermi's Golden Rule"; SIAM Journal on Applied Mathematics, 64, (2004), 1933 - 1953 doi:10.1137/S0036139903428914. BibTeX
212.	H. Kosina, M Nedjalkov, S. Selberherr: "Solution of the Space-dependent Wigner Equation Using a Particle Model"; Monte Carlo Methods and Applications, 10, (2004), 359 - 368 doi:10.1515/mcma.2004.10.3-4.359. BibTeX
211.	A. Gehring, S. Selberherr: "Statistical Simulation of Gate Dielectric Wearout, Leakage, and Breakdown"; Microelectronics Reliability, 44, (2004), 1879 - 1884 doi:10.1016/j.microrel.2004.07.101. BibTeX
210.	V. Palankovski, S. Selberherr: "The State-of-the-Art in Simulation for Optimization of SiGe-HBTs"; Applied Surface Science, 224, (2004), 312 - 319 doi:10.1016/j.apsusc.2003.09.036. BibTeX
209.	M. Nedjalkov, H. Kosina, S. Selberherr, Ch. Ringhofer, D.K. Ferry: "Unified Particle Approach to Wigner-Boltzmann Transport in Small Semiconductor Devices"; Physical Review B, 70, (2004), 1 - 16 doi:10.1103/PhysRevB.70.115319. BibTeX
208.	H. Kosina, M. Nedjalkov, S. Selberherr: "A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations"; Journal of Computational Electronics, 2, (2003), 147 - 151 doi:10.1023/B:JCEL.0000011416.93047.69. BibTeX
207.	J.M. Park, T. Grasser, H. Kosina, S. Selberherr: "A Numerical Study of Partial-SOI LDMOSFETs"; Solid-State Electronics, 47, (2003), 275 - 281 doi:10.1016/S0038-1101(02)00207-1. BibTeX
206.	T. Grasser, T.-W. Tang, H. Kosina, S. Selberherr: "A Review of Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation"; Proceedings of the IEEE, 91, (2003), 251 - 274 doi:10.1109/JPROC.2002.808150. BibTeX
205.	H. Ceric, S. Selberherr: "An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration"; IEICE Transactions on Electronics, E86-C, (invited) (2003), 421 - 426. BibTeX
204.	H. Kosina, M. Nedjalkov, S. Selberherr: "An Event Bias Technique for Monte Carlo Device Simulation"; Mathematics and Computers in Simulation, 62, (2003), 367 - 375 doi:10.1016/S0378-4754(02)00245-8. BibTeX
203.	A. Gehring, H. Kosina, S. Selberherr: "Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method"; Journal of Computational Electronics, 2, (2003), 219 - 223 doi:10.1023/B:JCEL.0000011428.85286.7d. BibTeX
202.	C. Harlander, R. Sabelka, S. Selberherr: "Efficient Inductance Calculation in Interconnect Structures by Applying the Monte Carlo Method"; Microelectronics Journal, 34, (2003), 815 - 821 doi:10.1016/S0026-2692(03)00147-2. BibTeX
201.	A. Gehring, T. Grasser, H. Kosina, S. Selberherr: "Energy Transport Gate Current Model Accounting for Non-Maxwellian Energy Distribution"; Electronics Letters, 39, (2003), 691 - 692 doi:10.1049/el:20030440. BibTeX
200.	T. Grasser, H. Kosina, S. Selberherr: "Hot Carrier Effects within Macroscopic Transport Models"; International Journal of High Speed Electronics and Systems, 13, (2003), 873 - 901 doi:10.1142/S012915640300206X. BibTeX
199.	T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr: "Improving SiC Lateral DMOSFET Reliability under High Field Stress"; Microelectronics Reliability, 43, (2003), 1889 - 1894 doi:10.1016/S0026-2714(03)00321-4. BibTeX
198.	S. Smirnov, H. Kosina, S. Selberherr: "Investigation of the Electron Mobility in Strained Si_1-x Ge_x at High Ge Composition"; IEICE Transactions on Electronics, E86-C, (2003), 350 - 356. BibTeX
197.	A. Gehring, F. Jimenez-Molinos, H. Kosina, A. Palma, F. Gamiz, S. Selberherr: "Modeling of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM Devices"; Microelectronics Reliability, 43, (2003), 1495 - 1500 doi:10.1016/S0026-2714(03)00265-8. BibTeX
196.	M. Nedjalkov, H. Kosina, S. Selberherr: "Monte Carlo Algorithms for Stationary Device Simulation"; Mathematics and Computers in Simulation, 62, (2003), 453 - 461 doi:10.1016/S0378-4754(02)00246-X. BibTeX
195.	S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr: "Monte Carlo Method for Modeling of Small Signal Response Including the Pauli Exclusion Principle"; Journal of Applied Physics, 94, (2003), 5791 - 5799 doi:10.1063/1.1616982. BibTeX
194.	V. M. Borzdov, V. O. Galenchik, H. Kosina, F. F. Komarov, O. G. Zhevnyak: "Monte Carlo Study of the Relative Frequency of Scattering Processes in Si-Inversion Layers"; Physics of Low-dimensional Structures, 5-6, (2003), 99 - 108. BibTeX
193.	C. Heitzinger, A. Hössinger, S. Selberherr: "On Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22, (2003), 879 - 883 doi:10.1109/TCAD.2003.814259. BibTeX
192.	H. Kosina, M. Nedjalkov: "Particle Models for Device Simulation"; International Journal of High Speed Electronics and Systems, 13, (invited) (2003), 727 - 769. BibTeX
191.	T. Binder, A. Hössinger, S. Selberherr: "Rigorous Integration of Semiconductor Process and Device Simulators"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22, (2003), 1204 - 1214 doi:10.1109/TCAD.2003.816219. BibTeX
190.	C. Heitzinger, W. Pyka, N. Tamaoki, T. Takase, T. Ohmine, S. Selberherr: "Simulation of Arsenic In Situ Doping With Polysilicon CVD and Its Application to High Aspect Ratio Trenches"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22, (2003), 285 - 292 doi:10.1109/TCAD.2002.807879. BibTeX
189.	A. Sheikholeslami, C. Heitzinger, H. Puchner, F. Badrieh, S. Selberherr: "Simulation of Void Formation in Interconnect Lines"; Proceedings of SPIE, 5117, (2003), 445 - 452 doi:10.1117/12.498783. BibTeX
188.	M. Nedjalkov, H. Kosina, S. Selberherr: "Stochastic Interpretation of the Wigner Transport in Nanostructures"; Microelectronics Journal, 34, (2003), 443 - 445 doi:10.1016/S0026-2692(03)00069-7. BibTeX
187.	H. Kosina, M. Nedjalkov, S. Selberherr: "The Stationary Monte Carlo Method for Device Simulation. I. Theory"; Journal of Applied Physics, 93, (2003), 3553 - 3563 doi:10.1063/1.1544654. BibTeX
186.	M. Nedjalkov, H. Kosina, S. Selberherr: "The Stationary Monte Carlo Method for Device Simulation. II. Event Biasing and Variance Estimation"; Journal of Applied Physics, 93, (2003), 3564 - 3571 doi:10.1063/1.1544655. BibTeX
185.	J. Cervenka, R. Klima, M. Knaipp, S. Selberherr: "Three-Dimensional Device Optimization by Green's Functions"; European Physical Journal - Applied Physics, 21, (2003), 103 - 106 doi:10.1051/epjap:2002121. BibTeX
184.	M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr: "A Space Dependent Wigner Equation Including Phonon Interaction"; Journal of Computational Electronics, 1, (2002), 27 - 31 doi:10.1023/A:1020799224110. BibTeX
183.	M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr: "A Wigner Equation with Quantum Electron-Phonon Interaction"; Microelectronic Engineering, 63, (2002), 199 - 203 doi:10.1016/S0167-9317(02)00625-1. BibTeX
182.	T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr: "Accurate Impact Ionization Model which Accounts for Hot and Cold Carrier Populations"; Applied Physics Letters, 80, (2002), 613 - 615 doi:10.1063/1.1445273. BibTeX
181.	C. Heitzinger, S. Selberherr: "An Extensible TCAD Optimization Framework Combining Gradient Based and Genetic Optimizers"; Microelectronics Journal, 33, (2002), 61 - 68 doi:10.1016/S0026-2692(01)00105-7. BibTeX
180.	H. Kosina, M. Gritsch, T. Grasser, S. Selberherr, T. Linton, S. Yu, M. Giles: "An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs"; Journal of Computational Electronics, 1, (2002), 371 - 374 doi:10.1023/A:1020703709031. BibTeX
179.	T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr: "Characterization of the Hot Electron Distribution Function Using Six Moments"; Journal of Applied Physics, 91, (2002), 3869 - 3879 doi:10.1063/1.1450257. BibTeX
178.	A. Gehring, T. Grasser, B.-H. Cheong, S. Selberherr: "Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer-Matrix Method"; Solid-State Electronics, 46, (2002), 1545 - 1551 doi:10.1016/S0038-1101(02)00103-X. BibTeX
177.	T. Grasser, S. Selberherr: "Electro-Thermal Effects in Mixed-Mode Device Simulation"; Romanian Journal of Information Science and Technology, 5, (2002), 339 - 354. BibTeX
176.	T.V. Gurov, M. Nedjalkov, P.A. Whitlock, H. Kosina, S. Selberherr: "Femtosecond Relaxation of Hot Electrons by Phonon Emission in Presence of Electric Field"; Physica B: Condensed Matter, 314, (2002), 301 - 304 doi:10.1016/S0921-4526(01)01417-X. BibTeX
175.	T. Grasser, H. Kosina, S. Selberherr: "Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Extensions and Critical Issues"; Wisnik, 444, (invited) (2002), 28 - 41. BibTeX
174.	T. Grasser, H. Kosina, S. Selberherr: "Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Review of Basic Models"; Wisnik, 444, (invited) (2002), 18 - 27. BibTeX
173.	M. Gritsch, H. Kosina, T. Grasser, S. Selberherr: "Revision of the Standard Hydrodynamic Transport Model for SOI Simulation"; IEEE Transactions on Electron Devices, 49, (2002), 1814 - 1820 doi:10.1109/TED.2002.803645. BibTeX
172.	A. Gehring, T. Grasser, H. Kosina, S. Selberherr: "Simulation of Hot-Electron Oxide Tunneling Current Based on a Non-Maxwellian Electron Energy Distribution Function"; Journal of Applied Physics, 92, (2002), 6019 - 6027 doi:10.1063/1.1516617. BibTeX
171.	H. Ceric, S. Selberherr: "Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution"; Microelectronics Reliability, 42, (2002), 1457 - 1460 doi:10.1016/S0026-2714(02)00169-5. BibTeX
170.	T. Grasser, S. Selberherr: "Technology CAD: Device Simulation and Characterization"; Journal of Vacuum Science & Technology B, 20, (2002), 407 - 413 doi:10.1116/1.1445162. BibTeX
169.	M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr: "Transient Model for Terminal Current Noise"; Applied Physics Letters, 80, (2002), 607 - 609 doi:10.1063/1.1447002. BibTeX
168.	M. Nedjalkov, H. Kosina, S. Selberherr, I. Dimov: "A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors"; VLSI Design, 13, (2001), 405 - 411 doi:10.1155/2001/54247. BibTeX
167.	R. Sabelka, S. Selberherr: "A Finite Element Simulator for Three-Dimensional Analysis of Interconnect Structures"; Microelectronics Journal, 32, (2001), 163 - 171 doi:10.1016/S0026-2692(00)00113-0. BibTeX
166.	V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr: "A Methodology for Deep Sub-0.25µm CMOS Technology Prediction"; IEEE Transactions on Electron Devices, 48, (2001), 2331 - 2336 doi:10.1109/16.954473. BibTeX
165.	T Fahringer, P. Blaha, A. Hössinger, J. Luitz, E. Mehofer, H. Moritsch, B. Scholz: "Development and Performance Analysis of Real-World Applications for Distributed and Parallel Architectures "; Concurrency and Computation: Practice and Experience, 13, (2001), 1 - 17. BibTeX
164.	V. Palankovski, R. Schultheis, A. Bonacina, S. Selberherr: "Effectiveness of Silicon Nitride Passivation in III-V Based Heterojunction Bipolar Transistors"; Radiation Effects and Defects in Solids, 156, (2001), 261 - 265 doi:10.1080/10420150108216903. BibTeX
163.	T. Grasser, S. Selberherr: "Fully Coupled Electrothermal Mixed-Mode Device Simulation of SiGe HBT Circuits"; IEEE Transactions on Electron Devices, 48, (2001), 1421 - 1427 doi:10.1109/16.930661. BibTeX
162.	F. Gamiz, J. Roldan, H. Kosina, T. Grasser: "Improving Strained-Si on Si_1-xGe_x Deep Submicron MOSFETs Performance by Means of a Stepped Doping Profile"; IEEE Transactions on Electron Devices, 48, (2001), 1878 - 1884. BibTeX
161.	V. Palankovski, R. Quay, S. Selberherr: "Industrial Application of Heterostructure Device Simulation"; IEEE Journal of Solid-State Circuits, 36, (invited) (2001), 1365 - 1370 doi:10.1109/4.944664. BibTeX
160.	M. Gritsch, H. Kosina, T. Grasser, S. Selberherr: "Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs"; Solid-State Electronics, 45, (2001), 621 - 627 doi:10.1016/S0038-1101(01)00080-6. BibTeX
159.	T. Grasser, H. Kosina, S. Selberherr: "Influence of the Distribution Function Shape and the Band Structure on Impact Ionization Modeling"; Journal of Applied Physics, 90, (2001), 6165 - 6171 doi:10.1063/1.1415366. BibTeX
158.	T. Grasser, H. Kosina, S. Selberherr: "Investigation of Spurious Velocity Overshoot Using Monte Carlo Data"; Applied Physics Letters, 79, (2001), 1900 - 1902 doi:10.1063/1.1405000. BibTeX
157.	V. Palankovski, S. Selberherr: "Micro Materials Modeling in MINIMOS-NT"; Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems, 7, (2001), 183 - 187 doi:10.1007/s005420000076. BibTeX
156.	R. Quay, K. Hess, R. Reuter, M. Schlechtweg, T. Grave, V. Palankovski, S. Selberherr: "Nonlinear Electronic Transport and Device Performance of HEMTs"; IEEE Transactions on Electron Devices, 48, (2001), 210 - 217 doi:10.1109/16.902718. BibTeX
155.	K. Dragosits, S. Selberherr: "Simulation of Ferroelectric Thin Films"; Radiation Effects and Defects in Solids, 156, (2001), 157 - 161 doi:10.1080/10420150108216888. BibTeX
154.	V. Palankovski, R. Schultheis, S. Selberherr: "Simulation of Power Heterojunction Bipolar Transistors on Gallium Arsenide"; IEEE Transactions on Electron Devices, 48, (2001), 1264 - 1269 doi:10.1109/16.925258. BibTeX
153.	H. Kosina, M. Nedjalkov: "The Monte Carlo Method for Semi-Classical Charge Transport in Semiconductor Devices"; Mathematics and Computers in Simulation, 55, (2001), 93 - 102. BibTeX
152.	K. Dragosits, S. Selberherr: "Two-Dimensional Simulation of Ferroelectric Memory Cells"; IEEE Transactions on Electron Devices, 48, (2001), 316 - 322 doi:10.1109/16.902733. BibTeX
151.	T. Grasser, H. Kosina, M. Gritsch, S. Selberherr: "Using Six Moments of Boltzmann's Transport Equation for Device Simulation"; Journal of Applied Physics, 90, (2001), 2389 - 2396 doi:10.1063/1.1389757. BibTeX
150.	M. Nedjalkov, H. Kosina: "Variance of the Ensemble Monte Carlo Algorithm for Semiconductor Transport Modeling"; Mathematics and Computers in Simulation, 55, (2001), 191 - 198. BibTeX
149.	A. Burenkov, K. Tietzel, A. Hössinger, J. Lorenz, H. Ryssel, S. Selberherr: "A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation"; IEICE Transactions on Electronics, E83-C, (2000), 1259 - 1266. BibTeX
148.	H. Kosina, M. Nedjalkov, S. Selberherr: "A Monte Carlo Method for Small Signal Analysis of the Boltzmann Equation"; Journal of Applied Physics, 87, (2000), 4308 - 4314 doi:10.1063/1.373070. BibTeX
147.	M. Nedjalkov, H. Kosina, S. Selberherr: "A Monte-Carlo Method to Analyze the Small Signal Response of the Semiconductor Carriers"; IEICE Transactions on Electronics, E83-C, (2000), 1218 - 1223. BibTeX
146.	R. Quay, C. Moglestue, V. Palankovski, S. Selberherr: "A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials"; Materials Science in Semiconductor Processing, 3, (2000), 149 - 155 doi:10.1016/S1369-8001(00)00015-9. BibTeX
145.	C. Heitzinger, S. Selberherr: "An Extensible TCAD Optimization Framework Combining Gradient Based and Genetic Optimizers"; Proceedings of SPIE, 4228, (2000), 279 - 289 doi:10.1117/12.405424. BibTeX
144.	H. Brech, T. Grave, S. Selberherr: "Development of Global Calibration for Accurate GaAs-PHEMT Simulation"; IEEE Transactions on Electron Devices, 47, (2000), 1957 - 1964 doi:10.1109/16.870581. BibTeX
143.	M. Knaipp, W. Kanert, S. Selberherr: "Hydrodynamic Modeling of Avalanche Breakdown in a Gate Overvoltage Protection Structure"; Solid-State Electronics, 44, (2000), 1135 - 1143 doi:10.1016/S0038-1101(00)00046-0. BibTeX
142.	H. Puchner, R. Castagnetti, W. Pyka: "Minimizing Thick Resist Sidewall Slope Dependence on Design Geometry by Optimizing Bake Conditions"; Microelectronic Engineering, 53, (2000), 429 - 432. BibTeX
141.	T. Grasser, S. Selberherr: "Mixed-Mode Device Simulation"; Microelectronics Journal, 31, (2000), 873 - 881 doi:10.1016/S0026-2692(00)00083-5. BibTeX
140.	R. Kosik, P. Fleischmann, B. Haindl, P. Pietra, S. Selberherr: "On the Interplay Between Meshing and Discretization in Three-Dimensional Diffusion Simulation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 19, (2000), 1233 - 1240 doi:10.1109/43.892848. BibTeX
139.	W. Pyka, R. Martins, S. Selberherr: "Optimized Algorithms for Three-Dimensional Cellular Topography Simulation"; IEEE Journal of Technology Computer Aided Design, 1, (2000), doi:10.1109/TCAD.1996.6449177. BibTeX
138.	A. Hössinger, E. Langer, S. Selberherr: "Parallelization of a Monte Carlo Ion Implantation Simulator"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 19, (2000), 560 - 567 doi:10.1109/43.845080. BibTeX
137.	R. Strasser, S. Selberherr: "Practical Inverse Modeling with SIESTA"; IEICE Transactions on Electronics, 83-C, (2000), 1303 - 1310. BibTeX
136.	H. Kosina, M. Nedjalkov, S. Selberherr: "Theory of the Monte Carlo Method for Semiconductor Device Simulation"; IEEE Transactions on Electron Devices, 47, (2000), 1898 - 1908 doi:10.1109/16.870569. BibTeX
135.	W. Pyka, H. Kirchauer, S. Selberherr: "Three-Dimensional Resist Development Simulation - Benchmarks and Integration with Lithography"; Microelectronic Engineering, 53, (2000), 449 - 452 doi:10.1016/S0167-9317(00)00353-1. BibTeX
134.	H. Kosina: "A Method to Reduce Small-Angle Scattering in Monte Carlo Device Analysis"; IEEE Transactions on Electron Devices, 46, (1999), 1196 - 1200. BibTeX
133.	M. Radi, E. Leitner, S. Selberherr: "AMIGOS: Analytical Model Interface & General Object-Oriented Solver"; IEEE Journal of Technology Computer Aided Design, 1, (1999), doi:10.1109/TCAD.1996.6449174. BibTeX
132.	B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr: "An Energy Relaxation Time Model for Device Simulation"; Solid-State Electronics, 43, (1999), 1791 - 1795 doi:10.1016/S0038-1101(99)00132-X. BibTeX
131.	K. Zankel, H. Kosina: "Capacitance Simulation of Irradiated Semiconductor Detectors"; Il Nuovo Cimento, 112, (1999), 43 - 47. BibTeX
130.	M. Stockinger, A. Wild, S. Selberherr: "Drive Performance of an Asymmetric MOSFET Structure: The Peak Device"; Microelectronics Journal, 30, (1999), 229 - 233 doi:10.1016/S0026-2692(98)00111-6. BibTeX
129.	P. Fleischmann, W. Pyka, S. Selberherr: "Mesh Generation for Application in Technology CAD"; IEICE Transactions on Electronics, E82-C, (invited) (1999), 937 - 947. BibTeX
128.	C. Pichler, R. Plasun, R. Strasser, S. Selberherr: "Simulation of Complete VLSI Fabrication Processes with Heterogeneous Simulation Tools"; IEEE Transactions on Semiconductor Manufacturing, 12, (1999), 76 - 86 doi:10.1109/66.744527. BibTeX
127.	V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr: "Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices"; Materials Science and Engineering B, 66, (1999), 46 - 49 doi:10.1016/S0921-5107(99)00118-X. BibTeX
126.	W. Pyka, P. Fleischmann, B. Haindl, S. Selberherr: "Three-Dimensional Simulation of HPCVD - Linking Continuum Transport and Reaction Kinetics with Topography Simulation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 18, (1999), 1741 - 1749 doi:10.1109/43.811323. BibTeX
125.	K. Dragosits, M. Knaipp, S. Selberherr: "Two-Dimensional Simulation of Ferroelectric Memory Cells"; Journal of the Korean Physical Society, 35, (1999), 104 - 106 doi:10.3938/jkps.35.S104. BibTeX
124.	R. Martins, S. Selberherr, F. Vaz: "A CMOS IC for Portable EEG Acquisition Systems"; IEEE Transactions on Instrumentation and Measurement, 47, (1998), 1191 - 1196 doi:10.1109/19.746581. BibTeX
123.	C. Wasshuber, H. Kosina, S. Selberherr: "A Comparative Study of Single-Electron Memories"; IEEE Transactions on Electron Devices, 45, (1998), 2365 - 2371 doi:10.1109/16.726659. BibTeX
122.	H. Kosina, M. Harrer: "A Hot-Hole Transport Model Based on Spherical Harmonics Expansion of the Anisotropic Bandstructure"; VLSI Design, 6, (1998), 205 - 208 doi:10.1155/1998/83430. BibTeX
121.	G. Kaiblinger-Grujin, H. Kosina: "An Improved Ionized Impurity Scattering Model For Monte Carlo Calculations"; VLSI Design, 6, (1998), 209 - 212 doi:10.1155/1998/87014. BibTeX
120.	G. Schrom, A. Stach, S. Selberherr: "An Interpolation Based MOSFET Model for Low-Voltage Applications"; Microelectronics Journal, 29, (1998), 529 - 534 doi:10.1016/S0026-2692(98)00002-0. BibTeX
119.	S. Selberherr: "Die großen Herausforderungen in der Mikroelektronik in den nächsten zehn Jahren"; E&I Elektrotechnik und Informationstechnik, 115, (invited) (1998), 344 - 348 doi:10.1007/BF03159602. BibTeX
118.	C. Wasshuber: "Grenzen der Miniaturisierung - Die Zukunft der Mikroelektronik"; Informatik Spektrum, 21, (invited) (1998), 223 - 226. BibTeX
117.	R. Martins, W. Pyka, R. Sabelka, S. Selberherr: "High-Precision Interconnect Analysis"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17, (1998), 1148 - 1159 doi:10.1109/43.736187. BibTeX
116.	G. Kaiblinger-Grujin, H. Kosina, S. Selberherr: "Influence of the Doping Element on the Electron Mobility in n-Silicon"; Journal of Applied Physics, 83, (1998), 3096 - 3101 doi:10.1063/1.367067. BibTeX
115.	R. Plasun, M. Stockinger, S. Selberherr: "Integrated Optimization Capabilities in the VISTA Technology CAD Framework"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17, (1998), 1244 - 1251 doi:10.1109/43.736564. BibTeX
114.	H. Kosina, G. Kaiblinger-Grujin: "Ionized-Impurity Scattering of Majority Electrons in Silicon"; Solid-State Electronics, 42, (1998), 331 - 338 doi:10.1016/S0038-1101(97)00199-8. BibTeX
113.	E. Leitner, S. Selberherr: "Mixed-Element Decomposition Method for Three-Dimensional Grid Adaptation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17, (1998), 561 - 572 doi:10.1109/43.709394. BibTeX
112.	W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr: "Monte Carlo Simulation of Silicon Amorphization during Ion Implantation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17, (1998), 1236 - 1243 doi:10.1109/43.736563. BibTeX
111.	M. Nedjalkov, I. Dimov, H. Haug: "Numerical Studies of the Markovian Limit of the Quantum Kinetics with Phonon Scattering"; Physica Status Solidi B - Basic Solid State Physics, 209, (1998), 109 - 121. BibTeX
110.	H. Kosina, C. Troger: "SPIN - A Schrödinger-Poisson Solver Including Nonparabolic Bands"; VLSI Design, 8, (1998), 489 - 493 doi:10.1155/1998/39231. BibTeX
109.	C. Wasshuber, H. Kosina: "Simulation of a Single Electron Tunnel Transistor with Inclusion of Inelastic Macroscopic Quantum Tunneling of Charge"; VLSI Design, 6, (1998), 35 - 38 doi:10.1155/1998/53694. BibTeX
108.	C. Wasshuber, H. Kosina, S. Selberherr: "Single-Electron Memories"; VLSI Design, 8, (1998), 219 - 223 doi:10.1155/1998/83017. BibTeX
107.	H. Kirchauer, S. Selberherr: "Three-Dimensional Photolithography Simulator Including Rigorous Nonplanar Exposure Simulation for Off-Axis Illumination"; Proceedings of SPIE, 3334, (1998), 764 - 776 doi:10.1117/12.310809. BibTeX
106.	G. Schrom, De Vivek, S. Selberherr: "VLSI Performance Metric Based on Minimum TCAD Simulations"; IEEE Journal of Technology Computer Aided Design, 1, (1998), doi:10.1109/TCAD.1996.6449169. BibTeX
105.	H. Noll, S. Selberherr: "Zur Entwicklung der Mikroelektronik"; Telematik, 4, (1998), 2 - 6. BibTeX
104.	C. Wasshuber, H. Kosina: "A Single-Electron Device and Circuit Simulator"; Superlattices and Microstructures, 21, (1997), 37 - 42 doi:10.1006/spmi.1996.0138. BibTeX
103.	C. Wasshuber, H. Kosina, S. Selberherr: "A Single-Electron Device and Circuit Simulator with a New Algorithm to Incorporate Co-tunneling"; IEEE Journal of Technology Computer Aided Design, 1, (1997), doi:10.1109/TCAD.1996.6449164. BibTeX
102.	H. Kosina: "Efficient Evaluation of Ionized-Impurity Scattering in Monte Carlo Transport Calculations"; Physica Status Solidi A, 163, (1997), 475 - 489. BibTeX
101.	P. Fleischmann, S. Selberherr: "Fully Unstructured Delaunay Mesh Generation Using a Modified Advancing Front Approach for Applications in Technology CAD"; IEEE Journal of Technology Computer Aided Design, 1, (1997), doi:10.1109/TCAD.1996.6449165. BibTeX
100.	C. Pichler, R. Plasun, R. Strasser, S. Selberherr: "High-Level TCAD Task Representation and Automation"; IEEE Journal of Technology Computer Aided Design, 1, (1997), doi:10.1109/TCAD.1996.6449162. BibTeX
99.	G. Kaiblinger-Grujin, H. Kosina, C. Köpf, S. Selberherr: "Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors"; Materials Science Forum, 258-263, (1997), 939 - 944 doi:10.4028/www.scientific.net/MSF.258-263.939. BibTeX
98.	H. Brech, T. Grave, T. Simlinger, S. Selberherr: "Optimization of Pseudomorphic HEMTs Supported by Numerical Simulations"; IEEE Transactions on Electron Devices, 44, (1997), 1822 - 1828 doi:10.1109/16.641348. BibTeX
97.	C. Köpf, H. Kosina, S. Selberherr: "Physical Models for Strained and Relaxed GaInAs Alloys: Band Structure and Low-Field Transport"; Solid-State Electronics, 41, (1997), 1139 - 1152 doi:10.1016/S0038-1101(97)00051-8. BibTeX
96.	H. Kirchauer, S. Selberherr: "Rigorous Three-Dimensional Photoresist Exposure and Development Simulation over Nonplanar Topography"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 16, (1997), 1431 - 1438 doi:10.1109/43.664225. BibTeX
95.	C. Wasshuber, H. Kosina, S. Selberherr: "SIMON - A Simulator for Single-Electron Tunnel Devices and Circuits"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 16, (1997), 937 - 944 doi:10.1109/43.658562. BibTeX
94.	T. Simlinger, H. Brech, T. Grave, S. Selberherr: "Simulation of Submicron Double-Heterojunction High Electron Mobility Transistors with MINIMOS-NT"; IEEE Transactions on Electron Devices, 44, (1997), 700 - 707 doi:10.1109/16.568029. BibTeX
93.	H. Kirchauer, S. Selberherr: "Three-Dimensional Photolithography Simulation"; IEEE Journal of Technology Computer Aided Design, 1, (1997), doi:10.1109/TCAD.1996.6449163. BibTeX
92.	K. Vinzenz, S. Selberherr: "Kommentar zu Prinzipien der virtuellen Realität und deren Anwendungen in intraoperativen Navigationshilfesystemen"; Acta Chirurgica Austriaca, 28, (invited) (1996), 60 - 61. BibTeX
91.	G. Schrom, C. Pichler, T. Simlinger, S. Selberherr: "On the Lower Bounds of CMOS Supply Voltage"; Solid-State Electronics, 39, (1996), 425 - 430 doi:10.1016/0038-1101(95)00171-9. BibTeX
90.	N. Khalil, J. Faricelli, C. Huang, S. Selberherr: "Two-Dimensional Dopant Profiling of Submicron MOSFET Using Nonlinear Least Squares Inverse Modeling"; Journal of Vacuum Science & Technology B, 14, (1996), 224 - 230 doi:10.1116/1.589033. BibTeX
89.	E. Strasser, S. Selberherr: "Algorithms and Models for Cellular Based Topography Simulation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 14, (1995), 1104 - 1114 doi:10.1109/43.406712. BibTeX
88.	H. Puchner, S. Selberherr: "An Advanced Model for Dopant Diffusion in Polysilicon"; IEEE Transactions on Electron Devices, 42, (1995), 1750 - 1755 doi:10.1109/16.464423. BibTeX
87.	H. Kosina, E. Langer, S. Selberherr: "Device Modelling for the 1990s"; Microelectronics Journal, 26, (invited) (1995), 217 - 233 doi:10.1016/0026-2692(95)98923-F. BibTeX
86.	H. Stippel, E. Leitner, C. Pichler, H. Puchner, E. Strasser, S. Selberherr: "Process Simulation for the 1990s"; Microelectronics Journal, 26, (invited) (1995), 203 - 215 doi:10.1016/0026-2692(95)98922-E. BibTeX
85.	P. Habas: "The Application of Charge-Pumping Technique to Characterize the Si/Si02 Interface in Power VDMOSFETs"; Microelectronic Engineering, 28, (1995), 171 - 174 doi:10.1016/0167-9317(95)00038-A. BibTeX
84.	N. Khalil, J. Faricelli, D. Bell, S. Selberherr: "The Extraction of Two-Dimensional MOS Transistor Doping via Inverse Modeling"; IEEE Electron Device Letters, 16, (1995), 17 - 19 doi:10.1109/55.363213. BibTeX
83.	M. Mukai, T. Tatsumi, N. Nakauchi, T. Kobayashi, K. Koyama, Y. Komatsu, R. Bauer, G. Rieger, S. Selberherr: "The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI"; Technical Report of IEICE, 95, (1995), 63 - 68. BibTeX
82.	S. Halama, F. Fasching, C. Fischer, H. Kosina, E. Leitner, P. Lindorfer, C. Pichler, H. Pimingstorfer, H. Puchner, G. Rieger, G. Schrom, T. Simlinger, M. Stiftinger, H. Stippel, E. Strasser, W. Tuppa, K. Wimmer, S. Selberherr: "The Viennese Integrated System for Technology CAD Applications"; Microelectronics Journal, 26, (1995), 137 - 158 doi:10.1016/0026-2692(95)98918-H. BibTeX
81.	W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr: "Trajectory Split Method for Monte Carlo Simulation of Ion Implantation"; IEEE Transactions on Semiconductor Manufacturing, 8, (1995), 402 - 407 doi:10.1109/66.475181. BibTeX
80.	H. Brand, S. Selberherr: "Two-Dimensional Simulation of Thermal Runaway in a Nonplanar GTO-Thyristor"; IEEE Transactions on Electron Devices, 42, (1995), 2137 - 2146 doi:10.1109/16.477772. BibTeX
79.	S. Halama, C. Pichler, G. Rieger, G. Schrom, T. Simlinger, S. Selberherr: "VISTA - User Interface, Task Level, and Tool Integration"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 14, (1995), 1208 - 1222 doi:10.1109/43.466337. BibTeX
78.	A. Abramo, L. Baudry, R. Brunetti, R. Castagne, M. Charef, F. Dessene, P. Dollfus, W.L. Engl, R. Fauquembergue, C. Fiegna, M.V. Fischetti, S. Galdin, N. Goldsman, M. Hackel, C. Hamaguchi, K. Hess, K. Hennacy, P. Hesto, J.M. Higman, T. Izuka, C. Jungemann, Y. Kamakura, H. Kosina, T. Kunikiyo, S.E. Laux, H. Lin, C. Maziar, H. Mizuno, H.J. Peifer, S. Ramaswamy, N. Sano, P.G. Scrobohaci, S. Selberherr, M. Takenaka, T.-W. Tang, K. Taniguchi, J.L. Thobel, R. Thoma, K. Tomizawa, M. Tomizawa, T. Vogelsang, S.-L. Wang, X. Wang, C.-S. Yao, P.D. Yoder, A. Yoshii: "A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon"; IEEE Transactions on Electron Devices, 41, (1994), 1646 - 1654 doi:10.1109/16.310119. BibTeX
77.	H. Kosina, S. Selberherr: "A Hybrid Device Simulator that Combines Monte Carlo and Drift-Diffusion Analysis"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 13, (1994), 201 - 210 doi:10.1109/43.259943. BibTeX
76.	E. Strasser, G. Schrom, K. Wimmer, S. Selberherr: "Accurate Simulation of Pattern Transfer Processes Using Minkowski Operations"; IEICE Transactions on Electronics, E77-C, (1994), 92 - 97. BibTeX
75.	H. Brand, S. Selberherr: "Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT)"; IEICE Transactions on Electronics, E77-C, (1994), 179 - 186. BibTeX
74.	H. Stippel, S. Selberherr: "Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree"; IEICE Transactions on Electronics, E77-C, (1994), 118 - 123. BibTeX
73.	F. Fasching, W. Tuppa, S. Selberherr: "VISTA - The Data Level"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 13, (1994), 72 - 81 doi:10.1109/43.273748. BibTeX
72.	C. Fischer, G. Nanz, S. Selberherr: "Finite Difference, Boundary-Fitted Grid Generation for Arbitrarily Shaped Two-Dimensional Simulation Areas"; Computer Methods in Applied Mechanics and Engineering, 110, (1993), 17 - 24 doi:10.1016/0045-7825(93)90016-Q. BibTeX
71.	S. Halama, S. Selberherr: "Future Aspects of Process and Device Simulation"; Electron Technology, 26, (invited) (1993), 49 - 57. BibTeX
70.	S. Selberherr: "Technology Computer-Aided Design"; South African Journal of Physics, 16, (invited) (1993), 1 - 5. BibTeX
69.	G. Nanz, P. Dickinger, S. Selberherr: "Calculation of Contact Currents in Device Simulation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 11, (1992), 128 - 136 doi:10.1109/43.108625. BibTeX
68.	M. Hackel, M. Faber, H. Markum, M. Müller: "Chiral Interface for QCD with Dynamical Quarks"; International Journal of Modern Physics C, 3, (1992), 961 - 970 doi:10.1142/S0129183192000622. BibTeX
67.	O. Heinreichsberger, S. Selberherr, M. Stiftinger, K. Traar: "Fast Iterative Solution of Carrier Continuity Equations for Three-Dimensional Device Simulation"; SIAM Journal of Scientific and Statistical Computing, 13, (1992), 289 - 306 doi:10.1137/0913015. BibTeX
66.	M. Hackel, M. Faber, H. Markum: "Interface Tension and Chiral Order Parameter Profile with Dynamical Quarks"; Physical Review D, 46, (1992), 5648 - 5654. BibTeX
65.	P. Habas, J. Faricelli: "Investigation of the Physical Modeling of the Gate-Depletion Effect"; IEEE Transactions on Electron Devices, 39, (1992), 1496 - 1500 doi:10.1109/16.137331. BibTeX
64.	J. Demel, S. Selberherr: "Application of the Complete Tableau Approach in JANAP"; Electrosoft, 2, (1991), 243 - 260. BibTeX
63.	S. Selberherr: "Device Modeling and Physics"; Physica Scripta, T35, (invited) (1991), 293 - 298 doi:10.1088/0031-8949/1991/T35/057. BibTeX
62.	E. Langer: "Fundamental Analysis of Surface Acoustic Wave Propagation"; International Journal of Engineering Science, 29, (1991), 331 - 343 doi:10.1016/0020-7225(91)90153-T. BibTeX
61.	S. Selberherr, M. Stiftinger, O. Heinreichsberger, K. Traar: "On the Numerical Solution of the Three-Dimensional Semiconductor Device Equations on Vector-Concurrent Computers"; Computer Physics Communications, 67, (1991), 145 - 156 doi:10.1016/0010-4655(91)90227-C. BibTeX
60.	G. Nanz, W. Kausel, S. Selberherr: "Self-Adaptive Space and Time Grids in Device Simulation"; International Journal for Numerical Methods in Engineering, 31, (1991), 1357 - 1374 doi:10.1002/nme.1620310709. BibTeX
59.	P. Habas: "A Physics Based Analytical MOSFET Model with Accurate Field Dependent Mobility"; Solid-State Electronics, 33, (1990), 923 - 933 doi:10.1016/0038-1101(90)90074-O. BibTeX
58.	W. Kausel, J.O. Nylander, G. Nanz, S. Selberherr, H. Pötzl: "BAMBI - A Transient 2D-MESFET Model with General Boundary Conditions Including Schottky and Current Controlled Contacts"; Microelectronics Journal, 21, (1990), 5 - 21 doi:10.1016/0026-2692(90)90014-T. BibTeX
57.	H. Kosina, S. Selberherr: "Coupling of Monte Carlo and Drift Diffusion Method with Applications to Metal Oxide Semiconductor Field Effect Transistors"; Japanese Journal of Applied Physics, 29, (1990), L2283 - L2285 doi:10.1143/JJAP.29.L2283. BibTeX
56.	E. Langer: "Fundamental Analysis of Surface Acoustic Wave Propagation"; Archiv für Elektronik und Übertragungstechnik, 44, (1990), 225 - 232. BibTeX
55.	P. Habas, S. Selberherr: "Impact of the Non-Degenerate Gate Effect on the Performance of Submicron MOS-Devices"; Informacije Midem - Journal of Microelectronics Electronic Components and Materials, 20, (1990), 185 - 188. BibTeX
54.	P. Dickinger: "New Models of High Voltage DMOS Devices for Circuit Simulation"; Electrosoft, 1, (1990), 298 - 308. BibTeX
53.	M. Thurner, P. Lindorfer, S. Selberherr: "Numerical Treatment of Nonrectangular Field-Oxide for 3-D MOSFET Simulation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 9, (1990), 1189 - 1197 doi:10.1109/43.62756. BibTeX
52.	P. Habas, S. Selberherr: "On the Effect of Non-Degenerate Doping of Polysilicon Gate in Thin Oxide MOS-Devices - Analytical Modeling"; Solid-State Electronics, 33, (1990), 1539 - 1544 doi:10.1016/0038-1101(90)90134-Z. BibTeX
51.	E. Langer: "Special Issue on "Semiconductor devices and electronic circuit design""; Electrosoft, 1, (1990), . BibTeX
50.	S. Selberherr, W. Hänsch, M. Seavey, J. Slotboom: "The Evolution of the MINIMOS Mobility Model"; Solid-State Electronics, 33, (1990), 1425 - 1436 doi:10.1016/0038-1101(90)90117-W. BibTeX
49.	S. Selberherr, W. Hänsch, M. Seavey, J. Slotboom: "The Evolution of the MINIMOS Mobility Model"; Archiv für Elektronik und Übertragungstechnik, 44, (1990), 161 - 172. BibTeX
48.	S. Selberherr, E. Langer: "Three Dimensional Process and Device Modeling"; Microelectronics Reliability, 30, (1990), 624 doi:10.1016/0026-2714(90)90512-L. BibTeX
47.	M. Thurner, S. Selberherr: "Three-Dimensional Effects Due to the Field Oxide in MOS Devices Analyzed with MINIMOS 5"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 9, (1990), 856 - 867 doi:10.1109/43.57786. BibTeX
46.	J.O. Nylander, F. Masszi, S. Selberherr, S. Berg: "Computer Simulations of Schottky Contacts with a Non-Constant Recombination Velocity"; Solid-State Electronics, 32, (1989), 363 - 367 doi:10.1016/0038-1101(89)90125-1. BibTeX
45.	S. Selberherr: "MOS Device Modeling at 77K"; IEEE Transactions on Electron Devices, 36, (1989), 1464 - 1474 doi:10.1109/16.30960. BibTeX
44.	G. Hobler, S. Selberherr: "Monte Carlo Simulation of Ion Implantation into Two- and Three-Dimensional Structures"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 8, (1989), 450 - 459 doi:10.1109/43.24873. BibTeX
43.	S. Selberherr: "Process Modeling"; Microelectronic Engineering, 9, (1989), 605 - 610 doi:10.1016/0167-9317(89)90129-9. BibTeX
42.	S. Selberherr, E. Langer: "Three Dimensional Process and Device Modeling"; Microelectronics Journal, 20, (invited) (1989), 113 - 127 doi:10.1016/0026-2692(89)90126-2. BibTeX
41.	W. Kausel, H. Pötzl, G. Nanz, S. Selberherr: "Two-Dimensional Transient Simulation of the Turn-Off Behavior of a Planar MOS-Transistor"; Solid-State Electronics, 32, (1989), 685 - 709 doi:10.1016/0038-1101(89)90002-6. BibTeX
40.	S. Selberherr: "Computer für Wissenschaft und Forschung"; Österreichische Hochschulzeitung, 5, (invited) (1988), 9 - 10. BibTeX
39.	S. Selberherr: "Computerunterstützte Konstruktion von Bauelementen der Mikroelektronik"; Österreichische Hochschulzeitung, 7, (invited) (1988), 25. BibTeX
38.	G. Hobler, S. Selberherr: "Two-Dimensional Modeling of Ion Implantation Induced Point Defects"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 7, (1988), 174 - 180 doi:10.1109/43.3147. BibTeX
37.	M. Budil, E. Guerrero, T. Brabec, S. Selberherr, H. Pötzl: "A New Model for the Determination of Point Defect Equilibrium Concentrations in Silicon"; COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 6, (1987), 37 - 44 doi:10.1108/eb010299. BibTeX
36.	W. Hänsch, S. Selberherr: "MINIMOS 3: A MOSFET Simulator that Includes Energy Balance"; IEEE Transactions on Electron Devices, 34, (1987), 1074 - 1078 doi:10.1109/T-ED.1987.23047. BibTeX
35.	G. Hobler, E. Langer, S. Selberherr: "Two-Dimensional Modeling of Ion Implantation with Spatial Moments"; Solid-State Electronics, 30, (1987), 445 - 455 doi:10.1016/0038-1101(87)90175-4. BibTeX
34.	A.R. Baghai-Wadji, S. Selberherr, F. Seifert: "Two-Dimensional Green's Function of a Semi-Infinite Anisotropic Dielectric in the Wavenumber Domain"; IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, UFFC-33, (1986), 315 - 317 doi:10.1109/T-UFFC.1986.26834. BibTeX
33.	S. Selberherr: "Process and Device Modeling for VLSI"; Microelectronics Journal, 16, (1985), 56 - 57 doi:10.1016/S0026-2692(85)80172-5. BibTeX
32.	W. Jüngling, P. Pichler, S. Selberherr, E. Guerrero, H. Pötzl: "Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods"; IEEE Journal of Solid-State Circuits, 20, (1985), 76 - 87 doi:10.1109/JSSC.1985.1052279. BibTeX
31.	W. Jüngling, P. Pichler, S. Selberherr, E. Guerrero, H. Pötzl: "Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods"; IEEE Transactions on Electron Devices, 32, (1985), 156 - 167 doi:10.1109/T-ED.1985.21925. BibTeX
30.	P. Pichler, W. Jüngling, S. Selberherr, E. Guerrero, H. Pötzl: "Simulation of Critical IC-Fabrication Steps"; IEEE Transactions on Electron Devices, 32, (1985), 1940 - 1953 doi:10.1109/T-ED.1985.22226. BibTeX
29.	P. Pichler, W. Jüngling, S. Selberherr, E. Guerrero, H. Pötzl: "Simulation of Critical IC-Fabrication Steps"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 4, (1985), 384 - 397 doi:10.1109/TCAD.1985.1270136. BibTeX
28.	P. Pichler, W. Jüngling, S. Selberherr, H. Pötzl: "Two-Dimensional Coupled Diffusion Modeling"; Physica B: Condensed Matter, 129, (1985), 187 - 191 doi:10.1016/0378-4363(85)90566-2. BibTeX
27.	P. Markowich, S. Selberherr: "A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments"; Matematica Aplicada e Computacional, 3, (1984), 131 - 156. BibTeX
26.	S. Selberherr, Ch. Ringhofer: "Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 3, (1984), 52 - 64 doi:10.1109/TCAD.1984.1270057. BibTeX
25.	A. Schütz, S. Selberherr, H. Pötzl: "Modeling MOS-Transistors in the Avalanche Breakdown Regime"; Transactions on Computer Simulation, 1, (invited) (1984), 1 - 14. BibTeX
24.	W. Jüngling, E. Guerrero, S. Selberherr: "On Modeling the Intrinsic Number and Fermi Levels for Device and Process Simulation"; COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 3, (1984), 79 - 105. BibTeX
23.	S. Selberherr: "Process and Device Modeling for VLSI"; Microelectronics Reliability, 24, (invited) (1984), 225 - 257 doi:10.1016/0026-2714(84)90450-5. BibTeX
22.	A. Schütz, S. Selberherr, H. Pötzl: "Temperature Distribution and Power Dissipation in MOSFETs"; Solid-State Electronics, 27, (1984), 394 - 395 doi:10.1016/0038-1101(84)90175-8. BibTeX
21.	J. Demel, S. Selberherr: "VDPACK - Ein benutzerorientiertes Unterprogrammpaket zur Realisierung einer dynamischen Speicherverwaltung in Fortran"; Angewandte Informatik, 6, (1984), 244 - 247. BibTeX
20.	J. Machek, S. Selberherr: "A Novel Finite Element Approach to Device Modelling"; IEEE Transactions on Electron Devices, 30, (1983), 1083 - 1092 doi:10.1109/T-ED.1983.21262. BibTeX
19.	P. Markowich, Ch. Ringhofer, S. Selberherr: "A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Devices"; MRC Technical Summary Report, 2482, (1983), 1 - 50. BibTeX
18.	P. Markowich, Ch. Ringhofer, S. Selberherr, M. Lentini: "A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Equations"; IEEE Transactions on Electron Devices, 30, (1983), 1165 - 1180 doi:10.1109/T-ED.1983.21273. BibTeX
17.	P. Markowich, Ch. Ringhofer, E. Langer, S. Selberherr: "An Asymptotic Analysis of Single-Junction Semiconductor Devices"; MRC Technical Summary Report, 2527, (1983), 1 - 62. BibTeX
16.	A.F. Franz, G. Franz, S. Selberherr, Ch. Ringhofer, P. Markowich: "Finite Boxes - A Generalization of the Finite Difference Method Suitable for Semiconductor Device Simulation"; IEEE Transactions on Electron Devices, 30, (1983), 1070 - 1082 doi:10.1109/T-ED.1983.21261. BibTeX
15.	Ch. Ringhofer, S. Selberherr: "Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs"; MRC Technical Summary Report, 2513, (1983), 1 - 49. BibTeX
14.	E. Langer, S. Selberherr, P. Markowich, Ch. Ringhofer: "Numerical Analysis of Acoustic Wave Generation in Anisotropic Piezoelectric Materials"; Sensors and Actuators, 4, (1983), 71 - 76 doi:10.1016/0250-6874(83)85010-0. BibTeX
13.	E. Langer, S. Selberherr, H. Mader: "A Numerical Analysis of Bulk-Barrier Diodes"; Solid-State Electronics, 25, (1982), 317 - 324 doi:10.1016/0038-1101(82)90141-1. BibTeX
12.	P. Markowich, Ch. Ringhofer, S. Selberherr, E. Langer: "A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device"; MRC Technical Summary Report, 2388, (1982), 1 - 57. BibTeX
11.	A. Schütz, S. Selberherr, H. Pötzl: "A Two-Dimensional Model of the Avalanche Effect in MOS Transistors"; Solid-State Electronics, 25, (1982), 177 - 183 doi:10.1016/0038-1101(82)90105-8. BibTeX
10.	A. Schütz, S. Selberherr, H. Pötzl: "Analysis of Breakdown Phenomena in MOSFET's"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, CAD-1, (1982), 77 - 85 doi:10.1109/TCAD.1982.1269997. BibTeX
9.	H. Goebl, S. Selberherr, W.-D Rase, H. Pudlatz: "Atlas, Matrices et Similarités: Petit Aperçu Dialectométrique"; Computers and the Humanities, 16, (1982), 69 - 84 doi:10.1007/BF02259737. BibTeX
8.	S. Selberherr, A. Schütz, H. Pötzl: "Investigation of Parameter Sensitivity of Short Channel MOSFETs"; Solid-State Electronics, 25, (1982), 85 - 90 doi:10.1016/0038-1101(82)90035-1. BibTeX
7.	E. Langer, S. Selberherr, H. Mader: "Numerische Analyse der Bulk-Barrier Diode"; Archiv für Elektronik und Übertragungstechnik, 36, (1982), 86 - 91. BibTeX
6.	S. Selberherr, E. Guerrero: "Simple and Accurate Representation of Implantation Parameters by Low Order Polynomals"; Solid-State Electronics, 24, (1981), 591 - 593 doi:10.1016/0038-1101(81)90081-2. BibTeX
5.	S. Selberherr, A. Schütz, H. Pötzl: "Two-Dimensional MOS Transistor Modelling"; European Electronics, 1, (invited) (1981), 20 - 30. BibTeX
4.	S. Selberherr, A. Schütz, H. Pötzl: "MINIMOS - A Two-Dimensional MOS Transistor Analyzer"; IEEE Journal of Solid-State Circuits, 15, (1980), 605 - 615 doi:10.1109/JSSC.1980.1051444. BibTeX
3.	S. Selberherr, A. Schütz, H. Pötzl: "MINIMOS - A Two-Dimensional MOS Transistor Analyzer"; IEEE Transactions on Electron Devices, 27, (1980), 1540 - 1550 doi:10.1109/T-ED.1980.20068. BibTeX
2.	S. Selberherr, A. Schütz, H. Pötzl: "MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren (Teil 1)"; Elektronikschau, 9, (1980), 18 - 23. BibTeX
1.	S. Selberherr, A. Schütz, H. Pötzl: "MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren (Teil 2)"; Elektronikschau, 10, (1980), 54 - 58. BibTeX