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Publication list for members of
E360 - Institute for Microelectronics
as any persons named in the publication record
761 records
| 761. | M. Benam, M. Ballicchia, J. Weinbub, S. Selberherr, M. Nedjalkov: "A Computational Approach for Investigating Coulomb Interaction Using Wigner-Poisson Coupling"; Journal of Computational Electronics, 20, (2021), 775 - 784 doi:10.1007/s10825-020-01643-x. BibTeX |
| 760. | W. Auzinger, H. Hofstätter, O. Koch, M. Quell: "Adaptive Time Propagation for Time-Dependent Schrödinger Equations"; International Journal of Applied and Computational Mathematics, 7, (2021), 6-1 - 6-14 doi:10.1007/s40819-020-00937-9. BibTeX |
| 759. | A. Toifl, F. Rodrigues, L.F. Aguinsky, A. Hössinger, J. Weinbub: "Continuum Level-Set Model for Anisotropic Wet Etching of Patterned Sapphire Substrates"; Semiconductor Science and Technology, 36, (2021), 045016-1 - 045016-12 doi:10.1088/1361-6641/abe49b. BibTeX |
| 758. | S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov: "Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions"; Solid-State Electronics, 186, (invited) (2021), 108103 doi:10.1016/j.sse.2021.108103. BibTeX |
| 757. | J. Ender, S. Fiorentini, R. Orio, W. Goes, V. Sverdlov, S. Selberherr: "Emerging CMOS Compatible Magnetic Memories and Logic"; IEEE Journal of the Electron Devices Society, 9, (invited) (2021), 456 - 463 doi:10.1109/JEDS.2021.3066679. BibTeX |
| 756. | N. Gupta, A. Shah, S. Khan, S. Vishvakarma, M. Waltl, P. Girard: "Error-Tolerant Reconfigurable VDD 10T SRAM Architecture for IoT Applications"; Electronics, 10, (2021), 1718-1 - 1718-16 doi:10.3390/electronics10141718. BibTeX |
| 755. | A. Shah, M. Waltl: "Impact of Negative Bias Temperature Instability on Single Event Transients in Scaled Logic Circuits"; International Journal Of Numerical Modelling-Electronic Networks Devices And Fields, 34, (2021), e2854-1 - e2854-13 doi:10.1002/jnm.2854. BibTeX |
| 754. | L. Filipovic, S. Selberherr: "Microstructure and Granularity Effects in Electromigration"; IEEE Journal of the Electron Devices Society, 9, (invited) (2021), 476 - 483 doi:10.1109/JEDS.2020.3044112. BibTeX |
| 753. | R. Orio, J. Ender, S. Fiorentini, W. Gös, S. Selberherr, V. Sverdlov: "Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell"; IEEE Journal of the Electron Devices Society, 9, (2021), 61 - 67 doi:10.1109/JEDS.2020.3039544. BibTeX |
| 752. | K. Tselios, D. Waldhör, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, T. Grasser, M. Waltl: "On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors"; IEEE Transactions on Device and Materials Reliability, 91, (invited) (2021), 199 - 206 doi:10.1109/TDMR.2021.3080983. BibTeX |
| 751. | M. Feil, K. Puschkarsky, W. Gustin, H. Reisinger, T. Grasser: "On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET Devices"; IEEE Transactions on Electron Devices, 68, (2021), 236 - 243 doi:10.1109/TED.2020.3036321. BibTeX |
| 750. | R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov: "Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning"; Micromachines, 12, (2021), 443 doi:10.3390/mi12040443. BibTeX |
| 749. | C. Schleich, D. Waldhör, K. Waschneck, M. Feil, H. Reisinger, T. Grasser, M. Waltl: "Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies"; IEEE Transactions on Electron Devices, 68, (2021), 4057 - 4063 doi:10.1109/TED.2021.3092295. BibTeX |
| 748. | J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov: "Reinforcement Learning Approach for Deterministic SOT-MRAM Switching"; Proceedings of SPIE, 11805, (invited) (2021), 1180519-1 - 1180519-8 doi:10.1117/12.2593937. BibTeX |
| 747. | H. Ceric, S. Selberherr, H. Zahedmanesh, R. Orio, K. Croes: "Review - Modeling Methods for Analysis of Electromigration Degradation in Nano-Interconnects"; ECS Journal Of Solid State Science And Technology, 10, (2021), 035003-1 - 035003-11 doi:10.1149/2162-8777/abe7a9. BibTeX |
| 746. | M. Quell, G. Diamantopoulos, A. Hössinger, J. Weinbub: "Shared-Memory Block-Based Fast Marching Method for Hierarchical Meshes"; Journal of Computational and Applied Mathematics, 392, (2021), 113488-1 - 113488-15 doi:10.1016/j.cam.2021.113488. BibTeX |
| 745. | V. Sverdlov, A.-M. El-Sayed, H. Seiler, H. Kosina, S. Selberherr: "Subbands in a Nanoribbon of Topologically Insulating MoS2 in the 1T′ Phase"; Solid-State Electronics, 184, (invited) (2021), 108081-1 - 108081-9 doi:10.1016/j.sse.2021.108081. BibTeX |
| 744. | S. Fatemeh, M. Moradinasab, U. Schwalke, L. Filipovic: "Superior Sensitivity and Optical Response of Blue Phosphorene and Its Doped Systems for Gas Sensing Applications"; ACS Omega, 6, (2021), 18770 - 18781 doi:10.1021/acsomega.1c01898. BibTeX |
| 743. | T. Knobloch, Yu. Illarionov, F. Ducry, C. Schleich, S. Wachter, K. Watanabe, T. Taniguchi, T. Müller, M. Waltl, M. Lanza, M. I. Vexler, M. Luisier, T. Grasser: "The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials"; Nature Electronics, 4, (2021), 98 - 108 doi:10.1038/s41928-020-00529-x. BibTeX |
| 742. | L. Filipovic: "Theoretical Examination of Thermo-Migration in Novel Platinum Microheaters"; Microelectronics Reliability, 123, (2021), 114219-1 - 114219-14 doi:10.1016/j.microrel.2021.114219. BibTeX |
| 741. | D. Waldhör, C. Schleich, J. Michl, B. Stampfer, K. Tselios, E. Ioannidis, H. Enichlmair, M. Waltl, T. Grasser: "Toward Automated Defect Extraction From Bias Temperature Instability Measurements"; IEEE Transactions on Electron Devices, 68, (2021), 4057 - 4063 doi:10.1109/TED.2021.3091966. BibTeX |
| 740. | M. Jech, A.-M. El-Sayed, S. E. Tyaginov, D. Waldhör, F. Bouakline, P. Saalfrank, D. Jabs, C. Jungemann, M. Waltl, T. Grasser: "Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices"; Physical Review Applied, 16, (2021), 014026 -1 - 014026 -24 doi:10.1103/PhysRevApplied.16.014026. BibTeX |
| 739. | R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov: "Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM Simulations"; Solid-State Electronics, 185, (invited) (2021), 108075 doi:10.1016/j.sse.2021.108075. BibTeX |
| 738. | A. Saleh, H. Ceric, H. Zahedmanesh: "Void-Dynamics in Nano-Wires and the Role of Microstructure Investigated via a Multi-Scale Physics-Based Model"; Journal of Applied Physics, 129, (2021), 125102-1 - 125102-17 doi:10.1063/5.0039953. BibTeX |
| 737. | G. Raut, A. Shah, V. Sharma, G. Rajput, S. Vishvakarma: "A 2.4-GS/s Power-Efficient, High-Resolution Reconfigurable Dynamic Comparator for ADC Architecture"; Circuits Systems and Signal Processing, 39, (2020), 4681 - 4694 doi:10.1007/s00034-020-01371-4. BibTeX |
| 736. | S. Khan, A. Shah, S. Chouhan, N. Gupta, J. Pandey, S. Vishvakarma: "A Symmetric D Flip-Flop Based PUF with Improved Uniqueness"; Microelectronics Reliability, 106, (2020), 113595 doi:10.1016/j.microrel.2020.113595. BibTeX |
| 735. | S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov: "Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM"; IEEE Journal of the Electron Devices Society, 8, (invited) (2020), 1249 - 1256 doi:10.1109/JEDS.2020.3023577. BibTeX |
| 734. | V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr: "Ballistic Conductance in a Topological 1T '-MoS2 Nanoribbon"; Semiconductors (Physics of Semiconductor Devices), 54, (invited) (2020), 1713 - 1715 doi:10.1134/S1063782620120386. BibTeX |
| 733. | A. Shah, M. Waltl: "Bias Temperature Instability Aware and Soft Error Tolerant Radiation Hardened 10T SRAM"; Electronics, 9, (2020), 256-1 - 256-12 doi:10.3390/electronics9020256. BibTeX |
| 732. | D.K. Ferry, M. Nedjalkov, J. Weinbub, M. Ballicchia, I. Welland, S. Selberherr: "Complex Systems in Phase Space"; Entropy, 22, (invited) (2020), 1103-1 - 1103-19 doi:10.3390/e22101103. BibTeX |
| 731. | S. Fiorentini, J. Ender, M. Mohamedou, S. Selberherr, R. Orio, W. Goes, V. Sverdlov: "Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells"; Proceedings of SPIE, 11470, (invited) (2020), 50 - 56 doi:10.1117/12.2567480. BibTeX |
| 730. | V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr: "Conductance in a Nanoribbon of Topologically Insulating MoS2 in the 1T´ Phase"; IEEE Transactions on Electron Devices, 67, (2020), 4687 - 4690 doi:10.1109/TED.2020.3023921. BibTeX |
| 729. | A. Makarov, Ph. Roussel, E. Bury, M. Vandemaele, A. Spessot, D. Linten, B. Kaczer, S. E. Tyaginov: "Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach"; Micromachines, 11, (2020), 675 doi:10.3390/mi11070657. BibTeX |
| 728. | C. Wen, A. Banshchikov, Yu. Illarionov, W. Frammelsberger, T. Knobloch, F. Hui, N. S. Sokolov, T. Grasser, M. Lanza: "Dielectric Properties of Ultrathin CaF2 Ionic Crystals"; Advanced Materials, 32, (2020), 2002525-1 - 2002525-6 doi:10.1002/adma.202002525. BibTeX |
| 727. | B. Stampfer, M. Simicic, P. Weckx, A. Abbasi, B. Kaczer, T. Grasser, M. Waltl: "Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays"; IEEE Transactions on Device and Materials Reliability, 20, (invited) (2020), 251 - 257 doi:10.1109/TDMR.2020.2985109. BibTeX |
| 726. | Yu. Illarionov, T. Knobloch, M. Jech, M. Lanza, D. Akinwande, M. I. Vexler, T. Müller, M. Lemme, G. Fiori, F. Schwierz, T. Grasser: "Insulators for 2D Nanoelectronics: The Gap to Bridge"; Nature Communications, 11, (2020), 3385 doi:10.1038/s41467-020-16640-8. BibTeX |
| 725. | B. Ruch, G. Pobegen, T. Grasser: "Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge Pumping"; IEEE Transactions on Electron Devices, 67, (2020), 4092 - 4098 doi:10.1109/TED.2020.3018091. BibTeX |
| 724. | M. Jech, G.A. Rott, H. Reisinger, S. Tyaginov, G. Rzepa, A. Grill, D. Jabs, C. Jungemann, M. Waltl, T. Grasser: "Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities"; IEEE Transactions on Electron Devices, 67, (2020), 3315 - 3322 doi:10.1109/TED.2020.3000749. BibTeX |
| 723. | Yu. Illarionov, T. Knobloch, T. Grasser: "Native High-k Oxides for 2D Transistors"; Nature Electronics, 3, (2020), 442 - 443 doi:10.1038/s41928-020-0464-2. BibTeX |
| 722. | A. Hartwig, E. Boman, R. Falgout, P. Ghysels, M. Heroux, X. Li, L. McInnes, R. Mills, S. Rajamanickam, K. Rupp, B. Smith, I. Yamazaki, U. Meier Yang: "Preparing Sparse Solvers for Exascale Computing"; Philosophical Transactions of The Royal Society A, 378, (invited) (2020), 20190053-1 - 20190053-14 doi:10.1098/rsta.2019.0053. BibTeX |
| 721. | M. Waltl: "Reliability of Miniaturized Transistors from the Perspective of Single-Defects"; Micromachines, 11, (invited) (2020), 736-1 - 736-21 doi:10.3390/mi11080736. BibTeX |
| 720. | R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov: "Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAM"; Solid-State Electronics, 168, (2020), 107730-1 - 107730-7 doi:10.1016/j.sse.2019.107730. BibTeX |
| 719. | B. Stampfer, F. Schanovski, T. Grasser, M. Waltl: "Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors"; Micromachines, 11, (invited) (2020), 446-1 - 446-11 doi:10.3390/mi11040446. BibTeX |
| 718. | M. Waltl, B. Stampfer, G. Rzepa, B. Kaczer, T. Grasser: "Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS Transistors"; Microelectronics Reliability, 114, (2020), 113746-1 - 113746-5 doi:10.1016/j.microrel.2020.113746. BibTeX |
| 717. | A. Shah, D. Rossi, V. Sharma, S. Vishvakarma, M. Waltl: "Soft Error Hardening Enhancement Analysis of NBTI Tolerant Schmitt Trigger Circuit"; Microelectronics Reliability, 107, (2020), 113617 doi:10.1016/j.microrel.2020.113617. BibTeX |
| 716. | M. Feil, A. Huerner, K. Puschkarsky, C. Schleich, T. Eichinger, W. Gustin, H. Reisinger, T. Grasser: "The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters"; Crystals, 10, (invited) (2020), 1143-1 - 1143-14 doi:10.3390/cryst10121143. BibTeX |
| 715. | A. Toifl, M. Quell, X. Klemenschits, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub: "The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy"; IEEE Access, 8, (2020), 115406 - 115422 doi:10.1109/ACCESS.2020.3004136. BibTeX |
| 714. | J. Berens, G. Pobegen, T. Grasser: "Tunneling Effects in NH3 Annealed 4H-SiC Trench MOSFETs"; Materials Science Forum, 1004, (2020), 652 - 658 doi:10.4028/www.scientific.net/MSF.1004.652. BibTeX |
| 713. | R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov: "Two-Pulse Magnetic Field-Free Switching Scheme for Perpendicular SOT-MRAM with a Symmetric Square Free Layer"; Physica B: Condensed Matter, 578, (2020), 411743 doi:10.1016/j.physb.2019.411743. BibTeX |
| 712. | M. Waltl: "Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS Transistors"; IEEE Transactions on Device and Materials Reliability, 20, (invited) (2020), 242 - 250 doi:10.1109/TDMR.2020.2988650. BibTeX |
| 711. | L. Filipovic: "A Method for Simulating the Influence of Grain Boundaries and Material Interfaces on Electromigration"; Microelectronics Reliability, 97, (2019), 38 - 52 doi:10.1016/j.microrel.2019.04.005. BibTeX |
| 710. | G. Diamantopoulos, A. Hössinger, S. Selberherr, J. Weinbub: "A Shared Memory Parallel Multi-Mesh Fast Marching Method for Re-Distancing"; Advances in Computational Mathematics, 45, (2019), 2029 - 2045 doi:10.1007/s10444-019-09683-z. BibTeX |
| 709. | M. Jech, A.-M. El-Sayed, S. E. Tyaginov, A. Shluger, T. Grasser: "Ab Initio Treatment of Silicon-Hydrogen Bond Rupture at Si/SiO2 Interfaces"; Physical Review B, 100, (2019), 195302 doi:10.1103/PhysRevB.100.195302. BibTeX |
| 708. | F. Safari, M. Moradinasab, M. Fathipour, H. Kosina: "Adsorption of the NH3, NO, NO2, CO2, and CO Gas Molecules on Blue Phosphorene: A First-Principles Study"; Applied Surface Science, 464, (2019), 153 - 161 doi:10.1016/j.apsusc.2018.09.048. BibTeX |
| 707. | K. Puschkarsky, H. Reisinger, G.A. Rott, C. Schluender, W. Gustin, T. Grasser: "An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps"; IEEE Transactions on Electron Devices, 66, (2019), 4623 - 4630 doi:10.1109/TED.2019.2941889. BibTeX |
| 706. | P. Sanvale, N. Gupta, V. Neema, A. Shah, S. Vishvakarma: "An Improved Read-Assist Energy Efficient Single Ended P-P-N Based 10T SRAM Cell for Wireless Sensor Networ"; Microelectronics Journal, 92, (2019), 104611 doi:10.1016/j.mejo.2019.104611. BibTeX |
| 705. | S. Khan, A. Shah, N. Gupta, S. Chouhan, J. Pandey, S. Vishvakarma: "An Ultra-Low Power, Reconfigurable, Aging Resilient RO PUF for IoT Applications"; Microelectronics Journal, 92, (2019), 104605 doi:10.1016/j.mejo.2019.104605. BibTeX |
| 704. | H. Ceric, H. Zahedmanesh, K. Croes: "Analysis of Electromigration Failure of Nano-Interconnects through a Combination of Modeling and Experimental Methods"; Microelectronics Reliability, 100-101, (2019), 113362 doi:10.1016/j.microrel.2019.06.054. BibTeX |
| 703. | A. Makarov, B. Kaczer, A. Chasin, M. Vandemaele, E. Bury, M. Jech, A. Grill, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov: "Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach"; IEEE Electron Device Letters, 40, (2019), 1579 - 1582 doi:10.1109/LED.2019.2933729. BibTeX |
| 702. | R. Bernhard, G. Pobegen, M. Rösch, R. Vytla, T. Grasser: "Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETs"; IEEE Transactions on Device and Materials Reliability, 19, (2019), 133 - 139 doi:10.1109/TDMR.2019.2891794. BibTeX |
| 701. | J. Berens, G. Pobegen, T. Eichinger, G. Rescher, T. Grasser: "Cryogenic Characterization of NH3 Post Oxidation Annealed 4H-SiC Trench MOSFETs"; Materials Science Forum, 963, (2019), 175 - 179 doi:10.4028/www.scientific.net/MSF.963.175. BibTeX |
| 700. | V. Sverdlov, S. Selberherr: "Current and Shot Noise at Spin-Dependent Hopping through Junctions with Ferromagnetic Contacts"; Solid-State Electronics, 159, (2019), 43 - 50 doi:10.1016/j.sse.2019.03.053. BibTeX |
| 699. | J. Ghosh, D. Osintsev, V. Sverdlov: "Efficient Two-Level Parallelization Approach to Evaluate Spin Relaxation in a Strained Thin Silicon fFilm"; Journal of Computational Electronics, 18, (2019), 28 - 36 doi:10.1007/s10825-018-1274-x. BibTeX |
| 698. | A. Grill, B. Stampfer, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, M. Waltl, T. Grasser: "Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs"; Solid-State Electronics, 19, (2019), 41 - 47 doi:10.1016/j.sse.2019.02.004. BibTeX |
| 697. | X. Jing, Yu. Illarionov, E. Yalon, P. Zhou, T. Grasser, Y. Shi, M. Lanza: "Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects"; Advanced Functional Materials, 30, (2019), 1901971 doi:10.1002/adfm.201901971. BibTeX |
| 696. | B. Ullmann, K. Puschkarsky, M. Waltl, H. Reisinger, T. Grasser: "Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques"; IEEE Transactions on Device and Materials Reliability, 19, (2019), 358 - 362 doi:10.1109/TDMR.2019.2909993. BibTeX |
| 695. | N. Oliva, Yu. Illarionov, E. Casu, M. Cavalieri, T. Knobloch, T. Grasser, A. Ionescu: "Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric"; IEEE Journal of the Electron Devices Society, 7, (2019), 1163 - 1169 doi:10.1109/JEDS.2019.2933745. BibTeX |
| 694. | B. Ullmann, M. Jech, K. Puschkarsky, G.A. Rott, M. Waltl, Yu. Illarionov, H. Reisinger, T. Grasser: "Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental"; IEEE Transactions on Electron Devices, 66, (2019), 232 - 240 doi:10.1109/TED.2018.2873419. BibTeX |
| 693. | M. Jech, B. Ullmann, G. Rzepa, S. E. Tyaginov, A. Grill, M. Waltl, D. Jabs, C. Jungemann, T. Grasser: "Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory"; IEEE Transactions on Electron Devices, 66, (2019), 241 - 248 doi:10.1109/TED.2018.2873421. BibTeX |
| 692. | Z. Wu, J. Franco, A. Vandooren, B. Kaczer, Ph. Roussel, G. Rzepa, T. Grasser: "Improved PBTI Reliability in Junction-Less FET Fabricated at Low Thermal Budget for 3-D Sequential Integration"; IEEE Transactions on Device and Materials Reliability, 9, (2019), 262 - 267 doi:10.1109/TDMR.2019.2906843. BibTeX |
| 691. | A. Lahlalia, O. Le Neel, R. Shankar, S. Selberherr, L. Filipovic: "Improved Sensing Capability of Integrated Semiconducting Metal Oxide Gas Sensor Devices"; Sensors, 19, (2019), 374-1 - 374-14 doi:10.3390/s19020374. BibTeX |
| 690. | M. Ballicchia, D.K. Ferry, M. Nedjalkov, J. Weinbub: "Investigating Quantum Coherence by Negative Excursions of the Wigner Quasi-Distribution"; Applied Sciences, 9, (invited) (2019), 1344-1 - 1344-10 doi:10.3390/app9071344. BibTeX |
| 689. | R. Orio, S. Selberherr, V. Sverdlov: "Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques"; Proceedings of SPIE, 11090, (invited) (2019), 110903F-1 - 110903F-6 doi:10.1117/12.2529119. BibTeX |
| 688. | C. Medina-Bailon, T. Sadi, M. Nedjalkov, H. Carillo-Nunez, J. Lee, O. Badami, V. Georgiev, S. Selberherr, A. Asenov: "Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism"; IEEE Electron Device Letters, 40, (2019), 1571 - 1574 doi:10.1109/LED.2019.2934349. BibTeX |
| 687. | K. Giering, K. Puschkarsky, H. Reisinger, G. Rzepa, G.A. Rott, R. Vollertsen, T. Grasser, R. Jancke: "NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling"; IEEE Transactions on Electron Devices, 66, (2019), 1662 - 1668 doi:10.1109/TED.2019.2901907. BibTeX |
| 686. | J. Berens, G. Pobegen, G. Rescher, T. Aichinger, T. Grasser: "NH3 and NO + NH3 Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability"; IEEE Transactions on Electron Devices, 66, (2019), 4692 - 4697 doi:10.1109/TED.2019.2941723. BibTeX |
| 685. | J. Franco, Z. Wu, G. Rzepa, L. Ragnarsson, H. Dekkers, A. Vandooren, G Groeseneken, N. Horiguchi, N. Collaert, D. Linten, T. Grasser, B. Kaczer: "On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTI"; IEEE Transactions on Device and Materials Reliability, 19, (2019), 268 - 274 doi:10.1109/TDMR.2019.2913258. BibTeX |
| 684. | S. Foster, M. Thesberg, N. Neophytou: "Quantum Transport Simulations for the Thermoelectric Power Factor in 2D Nanocomposites"; Materials Today: Proceedings, 8, (2019), 690 - 695 doi:10.1016/j.matpr.2019.02.069. BibTeX |
| 683. | Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, M. I. Vexler, M. Waltl, M. Lanza, N. S. Sokolov, A. Müller, T. Grasser: "Reliability of Scalable MoS2 FETs With 2 nm Crystalline CaF2 Insulators"; 2D Materials, 6, (2019), 045004 doi:10.1088/2053-1583/ab28f2. BibTeX |
| 682. | K. Puschkarsky, T. Grasser, T. Aichinger, W. Gustin, H. Reisinger: "Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability"; IEEE Transactions on Electron Devices, 66, (invited) (2019), 4604 - 4616 doi:10.1109/TED.2019.2938262. BibTeX |
| 681. | A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, T. Grasser, J. Weinbub: "Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics"; IEEE Transactions on Electron Devices, 66, (2019), 3060 - 3065 doi:10.1109/TED.2019.2916929. BibTeX |
| 680. | T. Sadi, C. Medina-Bailon, M. Nedjalkov, J. Lee, O. Badami, S. Berrada, H. Carillo-Nunez, V. Georgiev, S. Selberherr, A. Asenov: "Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors"; Materials, 12, (2019), 124-1 - 124-11 doi:10.3390/ma12010124. BibTeX |
| 679. | A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov: "Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs"; IEEE Electron Device Letters, 40, (2019), 870 - 873 doi:10.1109/LED.2019.2913625. BibTeX |
| 678. | J. Woerle, V. Simonka, E. Müller, A. Hössinger, H. Sigg, S. Selberherr, J. Weinbub, M. Camarda, U. Grossner: "Surface Morphology of 4H-SiC After Thermal Oxidation"; Materials Science Forum, 963, (2019), 180 - 183 doi:10.4028/www.scientific.net/MSF.963.180. BibTeX |
| 677. | V. Vargiamidis, M. Thesberg, N. Neophytou: "Theoretical Model for the Seebeck Coefficient in Superlattice Materials with Energy Relaxation"; Journal of Applied Physics, 126, (2019), 055105 doi:10.1063/1.5108607. BibTeX |
| 676. | L. Filipovic, S. Selberherr: "Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors"; Materials, 12, (invited) (2019), 2410-1 - 2410-37 doi:10.3390/ma12152410. BibTeX |
| 675. | M. Kittler, M. Reiche, B. Schwartz, H. Uebensee, H. Kosina, Z. Stanojevic, O. Baumgartner, T. Ortlepp: "Transport of Charge Carriers along Dislocations in Si and Ge"; Physica Status Solidi A, 216, (2019), 1900287 doi:10.1002/pssa.201900287. BibTeX |
| 674. | A. Banshchikov, Yu. Illarionov, M. I. Vexler, S. Wachter, N. S. Sokolov: "Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer"; Semiconductors (Physics of Semiconductor Devices), 53, (2019), 833 - 837 doi:10.1134/S1063782619060034. BibTeX |
| 673. | V. Sverdlov, A. Makarov, S. Selberherr: "Two-Pulse Sub-ns Switching Scheme for Advanced Spin-Orbit Torque MRAM"; Solid-State Electronics, 155, (2019), 49 - 56 doi:10.1016/j.sse.2019.03.010. BibTeX |
| 672. | Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, L. Mennel, M. Paur, M. Stöger-Pollach, A. Steiger-Thirsfeld, M. I. Vexler, M. Waltl, N. S. Sokolov, T. Müller, T. Grasser: "Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors"; Nature Electronics, 2, (2019), 230 - 235 doi:10.1038/s41928-019-0256-8. BibTeX |
| 671. | M. Nedjalkov, J. Weinbub, M. Ballicchia, S. Selberherr, I. Dimov, D.K. Ferry: "Wigner Equation for General Electromagnetic Fields: The Weyl-Stratonovich Transform"; Physical Review B, 99, (2019), 014423-1 - 014423-16 doi:10.1103/PhysRevB.99.014423. BibTeX |
| 670. | B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, V. Putcha, E. Bury, M. Simicic, A. Chasin, D. Linten, B. Parvais, F. Catthoor, G. Rzepa, M. Waltl, T. Grasser: "A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent Variability"; Microelectronics Reliability, 81, (invited) (2018), 186 - 194 doi:10.1016/j.microrel.2017.11.022. BibTeX |
| 669. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovski, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser: "A Physical Model for the Hysteresis in MoS2 Transistors"; IEEE Journal of the Electron Devices Society, 6, (2018), 972 - 978 doi:10.1109/JEDS.2018.2829933. BibTeX |
| 668. | L. Gnam, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub: "Accelerating Flux Calculations Using Sparse Sampling"; Micromachines, 9, (invited) (2018), 1 - 17 doi:10.3390/mi9110550. BibTeX |
| 667. | A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser: "Analysis of the Features of Hot-Carrier Degradation in FinFETs"; Semiconductors (Physics of Semiconductor Devices), 52, (2018), 1177 - 1182 doi:10.1134/S1063782618100081. BibTeX |
| 666. | B. Stampfer, F. Zhang, Yu. Illarionov, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser: "Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors"; ACS Nano, 12, (2018), 5368 - 5375 doi:10.1021/acsnano.8b00268. BibTeX |
| 665. | G. Rzepa, J. Franco, B.J. O´Sullivan, A. Subirats, M. Simicic, G. Hellings, P. Weckx, M. Jech, T. Knobloch, M. Waltl, P. Roussel, D. Linten, B. Kaczer, T. Grasser: "Comphy -- A Compact-Physics Framework for Unified Modeling of BTI"; Microelectronics Reliability, 85, (invited) (2018), 49 - 65 doi:10.1016/j.microrel.2018.04.002. BibTeX |
| 664. | G. Rescher, G. Pobegen, T. Aichinger, T. Grasser: "Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning"; Materials Science Forum, 924, (2018), 671 - 675 doi:10.4028/www.scientific.net/MSF.924.671. BibTeX |
| 663. | J. Stathis, S. Mahapatra, T. Grasser: "Controversial Issues in Negative Bias Temperature Instability"; Microelectronics Reliability, 81, (2018), 244 - 251 doi:10.1016/j.microrel.2017.12.035. BibTeX |
| 662. | V. Sverdlov, S. Selberherr: "Demands For Spin-based Nonvolatility In Emerging Digital Logic And Memory Devices For Low Power Computing"; Facta universitatis - series: Electronics and Energetics, 31, (invited) (2018), 529 - 545 doi:10.2298/FUEE1804529S. BibTeX |
| 661. | A.-M. El-Sayed, M. Watkins, T. Grasser, A. Shluger: "Effect of Electric Field on Migration of Defects in Oxides: Vacancies and Interstitials in Bulk MgO"; Physical Review B, 98, (2018), 064102 doi:10.1103/PhysRevB.98.064102. BibTeX |
| 660. | A. Lahlalia, O. Le Neel, R. Shankar, S.-Y. Kam, L. Filipovic: "Electro-Thermal Simulation & Characterization of a Microheater for SMO Gas Sensors"; Journal Of Microelectromechanical Systems, 27, (2018), 529 - 537 doi:10.1109/JMEMS.2018.2822942. BibTeX |
| 659. | M. Ballicchia, J. Weinbub, M. Nedjalkov: "Electron Evolution Around a Repulsive Dopant in a Quantum Wire: Coherence Effects"; Nanoscale, 10, (2018), 23037 - 23049 doi:10.1039/C8NR06933F. BibTeX |
| 658. | J. Weinbub, M. Ballicchia, M. Nedjalkov: "Electron Interference in a Double-Dopant Potential Structure"; Physica Status Solidi - Rapid Research Letters, 12, (2018), 1800111-1 - 1800111-4 doi:10.1002/pssr.201800111. BibTeX |
| 657. | V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide"; IEEE Transactions on Electron Devices, 65, (2018), 674 - 679 doi:10.1109/TED.2017.2786086. BibTeX |
| 656. | W. Gös, Y. Wimmer, A.-M. El-Sayed, G. Rzepa, M. Jech, A. Shluger, T. Grasser: "Identification of Oxide Defects in Semiconductor Devices: A Systematic Approach Linking DFT to Rate Equations and Experimental Evidence"; Microelectronics Reliability, 87, (2018), 286 - 320 doi:10.1016/j.microrel.2017.12.021. BibTeX |
| 655. | S. E. Tyaginov, A. Makarov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser: "Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs"; Semiconductors (Physics of Semiconductor Devices), 52, (2018), 1738 - 1742 doi:10.1134/S1063782618130183. BibTeX |
| 654. | J. Strand, K. Moloud, A.-M. El-Sayed, V. Afanas´Ev, A. Shluger: "Intrinsic Charge Trapping in Amorphous Oxide Films: Status and Challenges"; Journal of Physics: Condensed Matter, 30, (2018), 233001 doi:10.1088/1361-648X/aac005. BibTeX |
| 653. | V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide"; Materials Science Forum, 924, (2018), 192 - 195 doi:10.4028/www.scientific.net/MSF.924.192. BibTeX |
| 652. | A. Lahlalia, L. Filipovic, S. Selberherr: "Modeling and Simulation of Novel Semiconducting Metal Oxide Gas Sensors for Wearable Devices"; IEEE Sensors Journal, 18, (2018), 1960 - 1970 doi:10.1109/JSEN.2018.2790001. BibTeX |
| 651. | X. Klemenschits, S. Selberherr, L. Filipovic: "Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review"; Micromachines, 9, (invited) (2018), 631-1 - 631-31 doi:10.3390/mi9120631. BibTeX |
| 650. | Yu. Illarionov, A. Banshchikov, N. S. Sokolov, S. Wachter, M. I. Vexler: "Nonmonotonic Change in the Tunnel Conductivity of an MIS Structure with a Two-Layer Insulator with an Increase in Its Thickness (by the Example of the Metal/SiO2/CaF2/Si System)"; Technical Physics Letters, 44, (2018), 1188 - 1191 doi:10.1134/S1063785018120441. BibTeX |
| 649. | S. E. Tyaginov, A. Makarov, M. Jech, M. I. Vexler, J. Franco, B. Kaczer, T. Grasser: "Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor Structures"; Semiconductors (Physics of Semiconductor Devices), 52, (2018), 242 - 247 doi:10.1134/S1063782618020203. BibTeX |
| 648. | G. Rescher, G. Pobegen, T. Aichinger, T. Grasser: "Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique"; IEEE Transactions on Electron Devices, 25, (2018), 1419 - 1426 doi:10.1109/TED.2018.2803283. BibTeX |
| 647. | J. Weinbub, D.K. Ferry: "Recent Advances in Wigner Function Approaches"; Applied Physics Reviews, 5, (invited) (2018), 041104-1 - 041104-24 doi:10.1063/1.5046663. BibTeX |
| 646. | V. Sverdlov, A. Makarov, S. Selberherr: "Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell without External Magnetic Field"; Journal on Systemics, Cybernetics and Informatics, 16, (invited) (2018), 55 - 59. BibTeX |
| 645. | L. Filipovic, A. Lahlalia: "Review-System-on-Chip SMO Gas Sensor Integration in Advanced CMOS Technology"; Journal of the Electrochemical Society, 165, (2018), 862 - 879 doi:10.1149/2.0731816jes. BibTeX |
| 644. | G. Meller, S. Selberherr: "Simulation of Injection Currents into Disordered Molecular Conductors"; Materials Today: Proceedings, 5, (2018), 17472 - 17477 doi:10.1016/j.matpr.2018.06.051. BibTeX |
| 643. | V. Sverdlov, S. Selberherr: "Spin Correlations at Hopping in Magnetic Structures: From Tunneling Magnetoresistance to Single-Spin Transistor"; Proceedings of SPIE, 10732, (invited) (2018), 1073235-1 - 1073235-8 doi:10.1117/12.2319271. BibTeX |
| 642. | M. Nedjalkov, P. Ellinghaus, J. Weinbub, T. Sadi, A. Asenov, I. Dimov, S. Selberherr: "Stochastic Analysis of Surface Roughness Models in Quantum Wires"; Computer Physics Communications, 228, (2018), 30 - 37 doi:10.1016/j.cpc.2018.03.010. BibTeX |
| 641. | M. Kampl, H. Kosina: "The Backward Monte Carlo Method for Semiconductor Device Simulation"; Journal of Computational Electronics, 17, (2018), 1492 - 1504 doi:10.1007/s10825-018-1225-6. BibTeX |
| 640. | V. Simonka, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub: "Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide"; Journal of Applied Physics, 123, (2018), 235701-1 - 235701-7 doi:10.1063/1.5031185. BibTeX |
| 639. | K. Puschkarsky, H. Reisinger, T. Aichinger, W. Gustin, T. Grasser: "Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation"; IEEE Transactions on Device and Materials Reliability, 18, (2018), 144 - 153 doi:10.1109/TDMR.2018.2813063. BibTeX |
| 638. | K. Puschkarsky, H. Reisinger, W. Gustin, T. Grasser: "Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time Extrapolation"; IEEE Transactions on Electron Devices, 65, (2018), 4764 - 4771 doi:10.1109/TED.2018.2870170. BibTeX |
| 637. | P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr: "Analysis of Lense-Governed Wigner Signed Particle Quantum Dynamics"; Physica Status Solidi - Rapid Research Letters, 11, (2017), 1700102-1 - 1700102-5 doi:10.1002/pssr.201700102. BibTeX |
| 636. | V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr: "Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation"; Solid-State Electronics, 128, (invited) (2017), 135 - 140 doi:10.1016/j.sse.2016.10.032. BibTeX |
| 635. | E. Brinciotti, G. Badino, M. Knaipp, G. Gramse, J. Smoliner, F. Kienberger: "Calibrated Nanoscale Dopant Profiling and Capacitance of a High-Voltage Lateral MOS Transistor at 20 GHz Using Scanning Microwave Microscopy"; IEEE Transactions on Nanotechnology, 16, (2017), 245 - 252 doi:10.1109/TNANO.2017.2657888. BibTeX |
| 634. | R. Stradiotto, G. Pobegen, C. Ostermaier, M. Waltl, A. Grill, T. Grasser: "Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs"; IEEE Transactions on Electron Devices, 64, (2017), 1045 - 1052 doi:10.1109/TED.2017.2655367. BibTeX |
| 633. | C. Ostermaier, P. Lagger, G. Prechtl, A. Grill, T. Grasser, D. Pogany: "Dynamics of Carrier Transport via AlGaN Barrier in AlGaN/GaN MIS-HEMTs"; Applied Physics Letters, 110, (2017), 1 - 4 doi:10.1063/1.4982231. BibTeX |
| 632. | Yu. Illarionov, T. Knobloch, M. Waltl, G. Rzepa, A. Pospischil, D.K Polyushkin, M. M. Furchi, T. Müller, T. Grasser: "Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors"; 2D Materials, 4, (2017), 025108-1 - 025108-10 doi:10.1088/2053-1583/aa734a. BibTeX |
| 631. | P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr: "Framework to Model Neutral Particle Flux in Convex High Aspect Ratio Structures using One-Dimensional Radiosity"; Solid-State Electronics, 128, (invited) (2017), 141 - 147 doi:10.1016/j.sse.2016.10.029. BibTeX |
| 630. | Yu. Illarionov, M. Waltl, G. Rzepa, T. Knobloch, J. Kim, D. Akinwande, T. Grasser: "Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps"; npj 2D Materials and Applications, 1, (2017), 23-1 - 23-7 doi:10.1038/s41699-017-0025-3. BibTeX |
| 629. | P. Sharma, S. E. Tyaginov, S. E. Rauch, J. Franco, A. Makarov, M. I. Vexler, B. Kaczer, T. Grasser: "Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach"; IEEE Electron Device Letters, 38, (2017), 160 - 163 doi:10.1109/LED.2016.2645901. BibTeX |
| 628. | Yu. Illarionov, K. Smithe, M. Waltl, T. Knobloch, E. Pop, T. Grasser: "Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation"; IEEE Electron Device Letters, 38, (2017), 1763 - 1766 doi:10.1109/LED.2017.2768602. BibTeX |
| 627. | G. Rescher, G. Pobegen, T. Aichinger, T. Grasser: "Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique"; Materials Science Forum, 897, (2017), 143 - 146 doi:10.4028/www.scientific.net/MSF.897.143. BibTeX |
| 626. | B. Kaczer, J. Franco, S. E. Tyaginov, M. Jech, G. Rzepa, T. Grasser, B.J. O´Sullivan, R. Ritzenhaler, T. Schram, A. Spessot, D. Linten, N. Horiguchi: "Mapping of CMOS FET Degradation in Bias Space--Application to Dram Peripheral Devices"; Journal of Vacuum Science & Technology B, 35, (2017), 01A109-1 - 01A109-6 doi:10.1116/1.4972872. BibTeX |
| 625. | M. Thesberg, H. Kosina, N. Neophytou: "On the Lorenz Number of Multiband Materials"; Physical Review B, 95, (2017), 125206-1 - 125206-14 doi:10.1063/1.4972192. BibTeX |
| 624. | X. Song, F. Hui, T. Knobloch, B. Wang, Z. Fan, T. Grasser, X. Jing, Y. Shi, M. Lanza: "Piezoelectricity in Two Dimensions: Graphene vs. Molybdenum Disulfide"; Applied Physics Letters, 111, (2017), 083107-1 - 083107-4 doi:10.1063/1.5000496. BibTeX |
| 623. | M. Vexler, Yu. Illarionov, I. Grekhov: "Quantum-Well Charge and Voltage Distribution in a Metal-Insulator-Semiconductor Structure upon Resonant Electron Tunneling"; Semiconductors (Physics of Semiconductor Devices), 51, (2017), 444 - 448 doi:10.1134/S1063782617040224. BibTeX |
| 622. | V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation"; Journal of Physical Chemistry A, 121, (2017), 8791 - 8798 doi:10.1021/acs.jpca.7b08983. BibTeX |
| 621. | V. Sverdlov, J. Weinbub, S. Selberherr: "Spintronics as a Non-Volatile Complement to Modern Microelectronics"; Informacije Midem - Journal of Microelectronics Electronic Components and Materials, 47, (invited) (2017), 195 - 210. BibTeX |
| 620. | M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser: "Superior NBTI in High-k SiGe Transistors - Part I: Experimental"; IEEE Transactions on Electron Devices, 64, (2017), 2092 - 2098 doi:10.1109/TED.2017.2686086. BibTeX |
| 619. | M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser: "Superior NBTI in High-k SiGe Transistors - Part II: Theory"; IEEE Transactions on Electron Devices, 64, (2017), 2099 - 2105 doi:10.1109/TED.2017.2686454. BibTeX |
| 618. | S. Foster, M. Thesberg, N. Neophytou: "Thermoelectric Power Factor of Nanocomposite Materials from Two-Dimensional Quantum Transport Simulations"; Physical Review B, 96, (2017), 195425-1 - 195425-12 doi:10.1103/PhysRevB.96.195425. BibTeX |
| 617. | B. Ullmann, T. Grasser: "Transformation: Nanotechnology - Challenges in Transistor Design and Future Technologies"; E&I Elektrotechnik und Informationstechnik, 134, (2017), 349 - 354 doi:10.1007/s00502-017-0534-y. BibTeX |
| 616. | P. Manstetten, J. Weinbub, A. Hössinger, S. Selberherr: "Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces"; Procedia Computer Science, 108, (2017), 245 - 254 doi:10.1016/j.procs.2017.05.067. BibTeX |
| 615. | K. Rupp, C. Jungemann, S.-M Hong, M. Bina, T. Grasser, A. Jüngel: "A Review of Recent Advances in the Spherical Harmonics Expansion Method for Semiconductor Device Simulation"; Journal of Computational Electronics, 15, (2016), 939 - 958 doi:10.1007/s10825-016-0828-z. BibTeX |
| 614. | N.S. Azar, M. Pourfath: "Aggregation Kinetics and Stability Mechanisms of Pristine and Oxidized Nanocarbons in Polar Solvents"; The Journal of Physical Chemistry C, 120, (2016), 16804 - 16814 doi:10.1021/acs.jpcc.6b05318. BibTeX |
| 613. | Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser: "Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors"; Japanese Journal of Applied Physics, 55, (2016), 04EP03 doi:10.7567/JJAP.55.04EP03. BibTeX |
| 612. | A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr: "CMOS-Compatible Spintronic Devices: A Review"; Semiconductor Science and Technology, 31, (invited) (2016), 113006-1 - 113006-25 doi:10.1088/0268-1242/31/11/113006. BibTeX |
| 611. | R. Stradiotto, G. Pobegen, C. Ostermaier, T. Grasser: "Characterization of Charge Trapping Phenomena at III-N/Dielectric Interfaces"; Solid-State Electronics, 125, (2016), 142 - 153 doi:10.1016/j.sse.2016.07.017. BibTeX |
| 610. | J. Weinbub, A. Hössinger: "Comparison of the Parallel Fast Marching Method, the Fast Iterative Method, and the Parallel Semi-Ordered Fast Iterative Method"; Procedia Computer Science, 80, (2016), 2271 - 2275 doi:10.1016/j.procs.2016.05.408. BibTeX |
| 609. | M. Reiche, M. Kittler, E. Pippel, H. Kosina, A. Lugstein, H. Uebensee: "Electronic Properties of Dislocations"; Solid State Phenomena, 242, (2016), 141 - 146 doi:10.4028/www.scientific.net/SSP.242.141. BibTeX |
| 608. | J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress"; Journal of Nano Research, 39, (2016), 34 - 42 doi:10.4028/www.scientific.net/JNanoR.39.34. BibTeX |
| 607. | X. Jing, E. Panholzer, X. Song, E. Grustan-Gutierrez, F. Hui, Y. Shi, G. Benstetter, Yu. Illarionov, T. Grasser, M. Lanza: "Fabrication of Scalable and Ultra Low Power Photodetectors with High Light/Dark Current Ratios Using Polycrystalline Monolayer MoS2 Sheets"; Nano Energy, 30, (2016), 494 - 502 doi:10.1016/j.nanoen.2016.10.032. BibTeX |
| 606. | V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide"; Journal of Applied Physics, 120, (2016), 135705-1 - 135705-8 doi:10.1063/1.4964688. BibTeX |
| 605. | M. Zeraati, S.M.V. Allaei, I.A. Sarsari, M. Pourfath, D. Donadio: "Highly Anisotropic Thermal Conductivity of Arsenene: An Ab Initio Study"; Physical Review B, 93, (2016), 085424-1 - 085424-6 doi:10.1103/PhysRevB.93.085424. BibTeX |
| 604. | M. Reiche, M. Kittler, E. Pippel, H. Uebensee, H. Kosina, A. Grill, Z. Stanojevic, O. Baumgartner: "Impact of Defect-Induced Strain on Device Properties"; Advanced Engineering Materials, 18, (2016), 1 - 4 doi:10.1002/adem.201600736. BibTeX |
| 603. | T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Layer Coupling and Read Disturbances in a Buffered Magnetic Logic Environment"; Proceedings of SPIE, 9931, (invited) (2016), 99312M-1 - 99312M-12 doi:10.1117/12.2236151. BibTeX |
| 602. | Yu. Illarionov, M. Waltl, G. Rzepa, J. Kim, S. Kim, A. Dodabalapur, D. Akinwande, T. Grasser: "Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors"; ACS Nano, 10, (2016), 9543 - 9549 doi:10.1021/acsnano.6b04814. BibTeX |
| 601. | N. Neophytou, M. Thesberg: "Modulation Doping and Energy Filtering as Effective Ways to Improve the Thermoelectric Power Factor"; Journal of Computational Electronics, 15, (invited) (2016), 16 - 26 doi:10.1007/s10825-016-0792-7. BibTeX |
| 600. | M. Thesberg, H. Kosina, N. Neophytou: "On the Effectiveness of the Thermoelectric Energy Filtering Mechanism in Low-Dimensional Superlattices and Nano-Composites"; Journal of Applied Physics, 120, (2016), 234302-1 - 234302-9 doi:10.1063/1.4972192. BibTeX |
| 599. | M. Jech, P. Sharma, S. E. Tyaginov, F. Rudolf, T. Grasser: "On the Limits of Applicability of Drift-Diffusion Based Hot Carrier Degradation Modeling"; Japanese Journal of Applied Physics, 55, (2016), 1 - 6 doi:10.7567/JJAP.55.04ED14. BibTeX |
| 598. | K. Rupp, J. Weinbub, A. Jüngel, T. Grasser: "Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units"; ACM Transactions on Mathematical Software, 43, (2016), 11:1 - 11:27 doi:10.1145/2907944. BibTeX |
| 597. | M. Vexler, G.G. Kareva, Yu. Illarionov, I. Grekhov: "Resonant Electron Tunneling and Related Charging Phenomena in Metal-Oxide-p+-Si Nanostructures"; Technical Physics Letters, 42, (2016), 1090 - 1093 doi:10.1134/S1063785016110109. BibTeX |
| 596. | Y. Wimmer, A.-M. El-Sayed, W. Gös, T. Grasser, A. Shluger: "Role of Hydrogen in Volatile Behaviour of Defects in SiO2-Based Electronic Devices"; Proceedings of the Royal Society A - Mathematical, Physical and Engineering Sciences, 472, (invited) (2016), 1 - 23 doi:10.1098/rspa.2016.0009. BibTeX |
| 595. | Z. Chaghazardi, S. Touski, M. Pourfath, R. Faez: "Spin Relaxation in Graphene Nanoribbons in the Presence of Substrate Surface Roughness"; Journal of Applied Physics, 120, (2016), 053904-1 - 053904-5 doi:10.1063/1.4960354. BibTeX |
| 594. | L. Filipovic, S. Selberherr: "Stress Considerations for System-on-Chip Gas Sensor Integration in CMOS Technology"; IEEE Transactions on Device and Materials Reliability, 16, (2016), 483 - 495 doi:10.1109/TDMR.2016.2625461. BibTeX |
| 593. | S. Papaleo, W. H. Zisser, A.P. Singulani, H. Ceric, S. Selberherr: "Stress Evolution During Nanoindentation in Open TSVs"; IEEE Transactions on Device and Materials Reliability, 16, (2016), 470 - 474 doi:10.1109/TDMR.2016.2622727. BibTeX |
| 592. | L. Filipovic, S. Selberherr: "Stress in Three-Dimensionally Integrated Sensor Systems"; Microelectronics Reliability, 61, (2016), 3 - 10 doi:10.1016/j.microrel.2015.09.013. BibTeX |
| 591. | M. Glaser, A. Kitzler, A. Johannes, S. Pruncal, H. Potts, S. Conesa-Boj, L. Filipovic, H. Kosina, W. Skorupa, E. Bertagnolli, C. Ronning, A. Fontcuberta i Morral, A. Lugstein: "Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures"; Nano Letters, 16, (2016), 3507 - 3518 doi:10.1021/acs.nanolett.6b00315. BibTeX |
| 590. | B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, M. Simicic, V. Putcha, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, P. Debacker, B. Parvais, P. Raghavan, F. Catthoor, G. Rzepa, M. Waltl, W. Gös, T. Grasser: "The Defect-Centric Perspective of Device and Circuit Reliability - From Gate Oxide Defects to Circuits"; Solid-State Electronics, 125, (2016), 52 - 62 doi:10.1016/j.sse.2016.07.010. BibTeX |
| 589. | S. Nazemi, M. Pourfath, E. Soleimani, H. Kosina: "The Effect of Oxide Shell Thickness on the Structural, Electronic, and Optical Properties of Si-SiO2 Core-Shell Nano-Crystals: A (Time Dependent)Density Functional Theory Study"; Journal of Applied Physics, 114, (2016), 144302-1 - 1444302-9 doi:10.1063/1.4945392. BibTeX |
| 588. | M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina: "The Fragility of Thermoelectric Power Factor in Cross-Plane Superlattices in the Presence of Nonidealities: A Quantum Transport Simulation Approach"; Journal of Electronic Materials, 45, (2016), 1584 - 1588 doi:10.1007/s11664-015-4124-7. BibTeX |
| 587. | Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Müller, T. Grasser: "The Role of Charge Trapping in MoS2/SiO2 and MoS2/hBN Field-Effect Transistors"; 2D Materials, 3, (2016), 035004-1 - 035004-10 doi:10.1088/2053-1583/3/3/035004. BibTeX |
| 586. | P. Sharma, S. E. Tyaginov, M. Jech, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices"; Solid-State Electronics, 115, (2016), 185 - 191 doi:10.1016/j.sse.2015.08.014. BibTeX |
| 585. | G. Rescher, G. Pobegen, T. Grasser: "Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature Stress"; Materials Science Forum, 858, (2016), 481 - 484 doi:10.4028/www.scientific.net/MSF.858.481. BibTeX |
| 584. | S. E. Tyaginov, M. Jech, J. Franco, P. Sharma, B. Kaczer, T. Grasser: "Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON n-MOSFETs"; IEEE Electron Device Letters, 37, (2016), 84 - 87 doi:10.1109/LED.2015.2503920. BibTeX |
| 583. | K. Rupp, Ph. Tillet, F. Rudolf, J. Weinbub, A. Morhammer, T. Grasser, A. Jüngel, S. Selberherr: "ViennaCL---Linear Algebra Library for Multi- and Many-Core Architectures"; SIAM Journal on Scientific Computing, 38, (2016), S412 - S439 doi:10.1137/15M1026419. BibTeX |
| 582. | J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr: "A Comparison of Approaches for the Solution of the Wigner Equation"; Mathematics and Computers in Simulation, 107, (2015), 108 - 119 doi:10.1016/j.matcom.2014.06.001. BibTeX |
| 581. | N. Sefidmooye Azar, M. Pourfath: "A Comprehensive Study of Transistors Based on Conductive Polymer Matrix Composites"; IEEE Transactions on Electron Devices, 62, (2015), 1584 - 1589 doi:10.1109/TED.2015.2411992. BibTeX |
| 580. | M. I. Vexler, Yu. Illarionov, S. E. Tyaginov, T. Grasser: "Adaptation of the Model of Tunneling in a Metal/CaF2/Si(111) System for Use in Industrial Simulators of MIS Devices"; Semiconductors (Physics of Semiconductor Devices), 49, (2015), 259 - 263 doi:10.1134/S1063782615020207. BibTeX |
| 579. | J. M. Sellier, M. Nedjalkov, I. Dimov: "An Introduction to Applied Quantum Mechanics in the Wigner Monte Carlo Formalism"; Physics Reports, 577, (2015), 1 - 34 doi:10.1016/j.physrep.2015.03.001. BibTeX |
| 578. | I. Dimov, M. Nedjalkov, J. M. Sellier, S. Selberherr: "Boundary Conditions and the Wigner Equation Solution"; Journal of Computational Electronics, 14, (2015), 859 - 863 doi:10.1007/s10825-015-0720-2. BibTeX |
| 577. | P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs"; Microelectronics Reliability, 55, (2015), 1427 - 1432 doi:10.1016/j.microrel.2015.06.021. BibTeX |
| 576. | Z. Stanojevic, O. Baumgartner, L. Filipovic, H. Kosina, M. Karner, C. Kernstock, P. Prause: "Consistent Low-Field Mobility Modeling for Advanced MOS Devices"; Solid-State Electronics, 112, (2015), 37 - 45 doi:10.1016/j.sse.2015.02.008. BibTeX |
| 575. | E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, R. Minixhofer, L. Filipovic, R. Orio, S. Selberherr: "Coupled Simulation to Determine the Impact of Across Wafer Variations in Oxide PECVD on Electrical and Reliability Parameters of Through-Silicon Vias"; Microelectronic Engineering, 137, (2015), 141 - 145 doi:10.1016/j.mee.2014.11.014. BibTeX |
| 574. | P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr, I. Dimov: "Distributed-Memory Parallelization of the Wigner Monte Carlo Method Using Spatial Domain Decomposition"; Journal of Computational Electronics, 14, (2015), 151 - 162 doi:10.1007/s10825-014-0635-3. BibTeX |
| 573. | J. Weinbub, P. Ellinghaus, M. Nedjalkov: "Domain Decomposition Strategies for the Two-Dimensional Wigner Monte Carlo Method"; Journal of Computational Electronics, 14, (2015), 922 - 929 doi:10.1007/s10825-015-0730-0. BibTeX |
| 572. | V. Palankovski, S. Vainshtein, V. Yuferev, J. Kostamovaara, V. Egorkin: "Effect of Hot-Carrier Energy Relaxation on Main Properties of Collapsing Field Domains in Avalanching GaAs"; Applied Physics Letters, 106, (2015), 183505-1 - 183505-5 doi:10.1063/1.4921006. BibTeX |
| 571. | D. Osintsev, V. Sverdlov, S. Selberherr: "Electron Mobility and Spin Lifetime Enhancement in Strained Ultra-Thin Silicon Films"; Solid-State Electronics, 112, (2015), 46 - 50 doi:10.1016/j.sse.2015.02.007. BibTeX |
| 570. | R. Coppeta, D. Holec, H. Ceric, T. Grasser: "Evaluation of Dislocation Energy in Thin Films"; Philosophical Magazine, 95, (2015), 186 - 209 doi:10.1080/14786435.2014.994573. BibTeX |
| 569. | B. Kaczer, J. Franco, Ph. J. Roussel, G. Groeseneken, T. Chiarella, N. Horiguchi, T. Grasser: "Extraction of The Random Component of Time-Dependent Variability Using Matched Pairs"; IEEE Electron Device Letters, 36, (2015), 300 - 302 doi:10.1109/LED.2015.2404293. BibTeX |
| 568. | Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, B. Kaczer, H. Reisinger, T. Grasser: "Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs"; IEEE Transactions on Electron Devices, 62, (2015), 2730 - 2737 doi:10.1109/TED.2015.2454433. BibTeX |
| 567. | M. Asad, S. Salimian, M. Sheikhi, M. Pourfath: "Flexible Phototransistors Based on Graphene Nanoribbon Decorated with MoS2 Nanoparticles"; Sensors and Actuators A: Physical, 232, (2015), 285 - 291 doi:10.1016/j.sna.2015.06.018. BibTeX |
| 566. | M. Asad, M. Sheikhi, M. Pourfath, M. Moradi: "High Sensitive and Selective Flexible H2S Gas Sensors Based on Cu Nanoparticle Decorated SWCNTs"; Sensors and Actuators B: Chemical, 210, (2015), 1 - 8 doi:10.1016/j.snb.2014.12.086. BibTeX |
| 565. | A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger: "Hole Trapping at Hydrogenic Defects in Amorphous Silicon Dioxide"; Microelectronic Engineering, 147, (2015), 141 - 144 doi:10.1016/j.mee.2015.04.073. BibTeX |
| 564. | Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser: "Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences"; IEEE Transactions on Electron Devices, 62, (2015), 3876 - 3881 doi:10.1109/TED.2015.2480704. BibTeX |
| 563. | A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger: "Hydrogen-Induced Rupture of Strained Si-O Bonds in Amorphous Silicon Dioxide"; Physical Review Letters, 114, (2015), 115503-1 - 115503-5 doi:10.1103/PhysRevLett.114.115503. BibTeX |
| 562. | L. Wang, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov: "Impact of Self-Heating on the Statistical Variability in Bulk and SOI FinFETs"; IEEE Transactions on Electron Devices, 62, (2015), 2106 - 2112 doi:10.1109/TED.2015.2436351. BibTeX |
| 561. | T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop"; Solid-State Electronics, 108, (2015), 2 - 7 doi:10.1016/j.sse.2014.12.023. BibTeX |
| 560. | J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures"; Microelectronic Engineering, 147, (2015), 89 - 91 doi:10.1016/j.mee.2015.04.072. BibTeX |
| 559. | L. Filipovic, A. P. Singulani, F. Roger, S. Carniello, S. Selberherr: "Intrinsic Stress Analysis of Tungsten-Lined Open TSVs"; Microelectronics Reliability, 55, (2015), 1843 - 1848 doi:10.1016/j.microrel.2015.06.014. BibTeX |
| 558. | A. Axelevitch, V. Palankovski, S. Selberherr, G. Golan: "Investigation of Novel Silicon PV Cells of a Lateral Type"; Silicon, 7, (2015), 283 - 291 doi:10.1007/s12633-014-9227-x. BibTeX |
| 557. | H. Karamitaheri, M. Pourfath, H. Kosina, N. Neophytou: "Low-Dimensional Phonon Transport Effects in Ultranarrow Disordered Graphene Nanoribbons"; Physical Review B, 91, (2015), 165410-1 - 165410-15 doi:10.1103/PhysRevB.91.165410. BibTeX |
| 556. | P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser: "Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation"; IEEE Transactions on Electron Devices, 62, (2015), 1811 - 1818 doi:10.1109/TED.2015.2421282. BibTeX |
| 555. | T. Windbacher, J. Ghosh, A. Makarov, V. Sverdlov, S. Selberherr: "Modelling of Multipurpose Spintronic Devices"; International Journal of Nanotechnology, 12, (2015), 313 - 331 doi:10.1504/IJNT.2015.067215. BibTeX |
| 554. | M. Elahi, K. Khaliji, S. M. Tabatabaei, M. Pourfath, R. Asgari: "Modulation of Electronic and Mechanical Properties of Phosphorene Through Strain"; Physical Review B, 91, (2015), 1154121 - 1154128 doi:10.1103/PhysRevB.91.115412. BibTeX |
| 553. | M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina: "Numerical Study of Graphene Superlattice-Based Photodetectors"; IEEE Transactions on Electron Devices, 62, (2015), 593 - 600 doi:10.1109/TED.2014.2383354. BibTeX |
| 552. | S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, B. Kaczer, T. Grasser: "On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation"; Japanese Journal of Applied Physics, 54, (2015), 1 - 6 doi:10.7567/JJAP.54.04DC18. BibTeX |
| 551. | S. Nazemi, M. Pourfath, E. Soleimani, H. Kosina: "On the Role of Spatial Position of Bridged Oxygen Atoms as Surface Passivants on the Ground-State Gap and Photo-Absorption Spectrum of Silicon Nano-Crystals"; Journal of Applied Physics, 118, (2015), 205303-1 - 205303--6 doi:10.1063/1.4936310. BibTeX |
| 550. | M. Moradinasab, M. Pourfath, H. Kosina: "Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers"; IEEE Journal of Quantum Electronics, 51, (2015), 1 - 7 doi:10.1109/JQE.2014.2373171. BibTeX |
| 549. | L. Filipovic, S. Selberherr: "Performance and Stress Analysis of Metal Oxide Films for CMOS-Integrated Gas Sensors"; Sensors, 15, (2015), 7206 - 7227 doi:10.3390/s150407206. BibTeX |
| 548. | V. Sverdlov, S. Selberherr: "Silicon Spintronics: Progress and Challenges"; Physics Reports, 585, (2015), 1 - 40 doi:10.1016/j.physrep.2015.05.002. BibTeX |
| 547. | M. Hosseini, M. Elahi, M. Pourfath, D. Esseni: "Strain Induced Mobility Modulation in Single-Layer MoS2"; Journal of Physics D: Applied Physics, 48, (2015), 375104-1 - 375104-11 doi:10.1088/0022-3727/48/37/375104. BibTeX |
| 546. | M. Hosseini, M. Elahi, M. Pourfath, D. Esseni: "Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX2 ( M = Mo, W ; X = S , Se)"; IEEE Transactions on Electron Devices, 62, (2015), 3192 - 3198 doi:10.1109/TED.2015.2461617. BibTeX |
| 545. | Yu. Illarionov, M. I. Vexler, M. Karner, S. E. Tyaginov, J. Cervenka, T. Grasser: "TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures"; Current Applied Physics, 15, (2015), 78 - 83 doi:10.1016/j.cap.2014.10.015. BibTeX |
| 544. | M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina: "The Influence of Non-Idealities on the Thermoelectric Power Factor of Nanostructured Superlattices"; Journal of Applied Physics, 118, (2015), 224301-1 - 224301-6 doi:10.1063/1.4936839. BibTeX |
| 543. | M. Nedjalkov, J. Weinbub, P. Ellinghaus, S. Selberherr: "The Wigner Equation in the Presence of Electromagnetic Potentials"; Journal of Computational Electronics, 14, (2015), 888 - 893 doi:10.1007/s10825-015-0732-y. BibTeX |
| 542. | A. El-Sayed, Y. Wimmer, W. Gös, T. Grasser, V. Afanas´Ev, A. Shluger: "Theoretical Models of Hydrogen-Induced Defects in Amorphous Silicon Dioxide"; Physical Review B, 92, (2015), 014107-1 - 014107-11 doi:10.1103/PhysRevB.92.014107. BibTeX |
| 541. | F. Rudolf, K. Rupp, J. Weinbub, A. Morhammer, S. Selberherr: "Transformation Invariant Local Element Size Specification"; Applied Mathematics and Computation, 267, (2015), 195 - 206 doi:10.1016/j.amc.2015.04.027. BibTeX |
| 540. | N. Neophytou, H. Karamitaheri, H. Kosina: "Use of Field-Effect Density Modulation to Increase ZT for Si Nanowires: A Simulation Study"; Journal of Electronic Materials, 44, (2015), 1599 - 1605 doi:10.1007/s11664-014-3488-4. BibTeX |
| 539. | N. Ghobadi, M. Pourfath: "Vertical Tunneling Graphene Heterostructure-Based Transistor for Pressure Sensing"; IEEE Electron Device Letters, 36, (2015), 280 - 282 doi:10.1109/LED.2014.2388452. BibTeX |
| 538. | M. Hosseini, M. Elahi, M. Pourfath, D. Esseni: "Very Large Strain Gauges Based on Single Layer MoSe2 and WSe2 for Sensing Applications"; Applied Physics Letters, 107, (2015), 253503-1 - 253503-4 doi:10.1063/1.4937438. BibTeX |
| 537. | J. Weinbub, M. Wastl, K. Rupp, F. Rudolf, S. Selberherr: "ViennaMaterials - A Dedicated Material Library for Computational Science and Engineering"; Applied Mathematics and Computation, 267, (2015), 282 - 293 doi:10.1016/j.amc.2015.03.094. BibTeX |
| 536. | J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr: "A Benchmark Study of the Wigner Monte Carlo Method"; Monte Carlo Methods and Applications, 20, (2014), 43 - 51 doi:10.1515/mcma-2013-0018. BibTeX |
| 535. | N. Ghobadi, M. Pourfath: "A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures"; IEEE Transactions on Electron Devices, 61, (2014), 186 - 192 doi:10.1109/TED.2013.2291788. BibTeX |
| 534. | N. Djavid, K. Khaliji, S. M. Tabatabaei, M. Pourfath: "A Computational Study on the Electronic Transport Properties of Ultra-Narrow Disordered Zigzag Graphene Nanoribbons"; IEEE Transactions on Electron Devices, 61, (2014), 23 - 29 doi:10.1109/TED.2013.2290773. BibTeX |
| 533. | J. Weinbub, A. Hössinger: "Accelerated Redistancing for Level Set-Based Process Simulations with the Fast Iterative Method"; Journal of Computational Electronics, 13, (2014), 877 - 884 doi:10.1007/s10825-014-0604-x. BibTeX |
| 532. | K. Rupp, Ph. Tillet, A. Jüngel, T. Grasser: "Achieving Portable High Performance for Iterative Solvers on Accelerators"; Proceedings in Applied Mathematics and Mechanics, 14, (2014), 963 - 964 doi:10.1002/pamm.201410462. BibTeX |
| 531. | D. Osintsev, V. Sverdlov, S. Selberherr: "Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films"; Advanced Materials Research - Print/CD, 854, (2014), 29 - 34 doi:10.4028/www.scientific.net/AMR.854.29. BibTeX |
| 530. | Yu. Illarionov, M. Bina, S. E. Tyaginov, T. Grasser: "An Analytical Approach for the Determination of the Lateral Trap Position in Ultra-Scaled MOSFETs"; Japanese Journal of Applied Physics, 53, (2014), 04EC22-1 - 04EC22-4 doi:10.7567/JJAP.53.04EC22. BibTeX |
| 529. | H. Karamitaheri, N. Neophytou, H. Kosina: "Anomalous Diameter Dependence of Thermal Transport in Ultra-Narrow Si Nanowires"; Journal of Applied Physics, 115, (2014), 024302_1 - 024302_7 doi:10.1063/1.4858375. BibTeX |
| 528. | M. Gholipour, N. Masoumi, Y.C. Chen, D. Chen, M. Pourfath: "Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design"; IEEE Transactions on Electron Devices, 61, (2014), 4000 - 4006 doi:10.1109/TED.2014.2362774. BibTeX |
| 527. | Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser: "Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors"; Applied Physics Letters, 105, (2014), 1435071 - 1435075 doi:10.1063/1.4897344. BibTeX |
| 526. | V. V. A. Camargo, B. Kaczer, T. Grasser, G. Wirth: "Circuit Simulation of Workload-Dependent RTN and BTI Based on Trap Kinetics"; Microelectronics Reliability, 54, (2014), 2364 - 2370. BibTeX |
| 525. | P. Reininger, B. Schwarz, H. Detz, D. MacFarland, T. Zederbauer, A. M. Andrews, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser: "Diagonal-Transition Quantum Cascade Detector"; Applied Physics Letters, 105, (2014), 1 - 4 doi:10.1063/1.4894767. BibTeX |
| 524. | Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov: "Electrical and Optical Characterization of Au/CaF2/p-Si(111) Tunnel-Injection Diodes"; Journal of Applied Physics, 115, (2014), 223706-1 - 223706-5 doi:10.1063/1.4882375. BibTeX |
| 523. | W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr: "Electromigration Reliability of Open TSV Structures"; Microelectronics Reliability, 54, (2014), 2133 - 2137 doi:10.1016/j.microrel.2014.07.099. BibTeX |
| 522. | J. M. Sellier, S. Amoroso, M. Nedjalkov, S. Selberherr, A. Asenov, I. Dimov: "Electron Dynamics in Nanoscale Transistors by Means of Wigner and Boltzmann Approaches"; Physica A: Statistical Mechanics and its Applications, 398, (2014), 194 - 198 doi:10.1016/j.physa.2013.12.045. BibTeX |
| 521. | D. Narducci, B. Lorenzi, X. Zianni, N. Neophytou, S. Frabboni, G. Gazzadi, A. Roncaglia, F. Suriano: "Enhancement of the Power Factor in Two-Phase Silicon-Boron Nanocrystalline Alloys"; Physica Status Solidi A, 211, (2014), 1255 - 1258 doi:10.1002/pssa.201300130. BibTeX |
| 520. | N. Neophytou, H. Kosina: "Gated Si Nanowires for Large Thermoelectric Power Factors"; Applied Physics Letters, 105, (2014), 073119-1 - 5 doi:10.1063/1.4893977. BibTeX |
| 519. | M. Asad, M. Fathipour, M. Sheikhi, M. Pourfath: "High-performance Infrared Photo-transistor Based on SWCNT Decorated with PbS Nanoparticles"; Sensors and Actuators A: Physical, 220, (2014), 213 - 220 doi:10.1016/j.sna.2014.10.017. BibTeX |
| 518. | J. Weinbub, K. Rupp, S. Selberherr: "Highly Flexible and Reusable Finite Element Simulations with ViennaX"; Journal of Computational and Applied Mathematics, 270, (2014), 484 - 495 doi:10.1016/j.cam.2013.12.013. BibTeX |
| 517. | M. Tapajna, N. Killat, V. Palankovski, D. Gregusova, K. Cico, J. Carlin, N. Grandjean, M. Kuball, J. Kuzmik: "Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors"; IEEE Transactions on Electron Devices, 61, (2014), 2793 - 2801 doi:10.1109/TED.2014.2332235. BibTeX |
| 516. | G. Pobegen, T. Aichinger, A. Salinaro, T. Grasser: "Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs"; Materials Science Forum, 778-780, (2014), 959 - 962 doi:10.4028/www.scientific.net/MSF.778-780.959. BibTeX |
| 515. | L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Seinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank: "Methods of Simulating Thin Film Deposition Using Spray Pyrolysis Techniques"; Microelectronic Engineering, 117, (2014), 57 - 66 doi:10.1016/j.mee.2013.12.025. BibTeX |
| 514. | H. Ceric, R. Orio, W. H. Zisser, S. Selberherr: "Microstructural Impact on Electromigration: A TCAD Study"; Facta universitatis - series: Electronics and Energetics, 27, (2014), 1 - 11 doi:10.2298/FUEE1401001C. BibTeX |
| 513. | G.A. Rott, K. Rott, H. Reisinger, W. Gustin, T. Grasser: "Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel Transistors"; Microelectronics Reliability, 54, (2014), 2310 - 2314 doi:10.1016/j.microrel.2014.07.040. BibTeX |
| 512. | S. E. Tyaginov, Yu. Illarionov, M. I. Vexler, M. Bina, J. Cervenka, J. Franco, B. Kaczer, T. Grasser: "Modeling of Deep-Submicron Silicon-Based MISFETs with Calcium Fluoride Dielectric"; Journal of Computational Electronics, 13, (2014), 733 - 738 doi:10.1007/s10825-014-0593-9. BibTeX |
| 511. | S. E. Tyaginov, Y. Wimmer, T. Grasser: "Modeling of Hot-Carrier Degradation Based on Thorough Carrier Transport Treatment"; Facta Universitatis, 27, (invited) (2014), 479 - 508 doi:10.2298/FUEE1404479T. BibTeX |
| 510. | L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger: "Modeling the Growth of Tin Dioxide using Spray Pyrolysis Deposition for Gas Sensor Applications"; IEEE Transactions on Semiconductor Manufacturing, 27, (2014), 269 - 277 doi:10.1109/TSM.2014.2298883. BibTeX |
| 509. | S. Amoroso, L. Gerrer, M. Nedjalkov, R. Hussin, C. Alexander, A. Asenov: "Modelling Carriers Mobility in nano-MOSFETs in the Presence of Discrete Trapped Charges: Accuracy and Issues"; IEEE Transactions on Electron Devices, 61, (2014), 1292 - 1298 doi:10.1109/TED.2014.2312820. BibTeX |
| 508. | S. Wolf, N. Neophytou, Z. Stanojevic, H. Kosina: "Monte Carlo Simulations of Thermal Conductivity in Nanoporous Si Membranes"; Journal of Electronic Materials, 43, (2014), 3870 - 3875 doi:10.1007/S11664-014-3324-X. BibTeX |
| 507. | T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, B. Kaczer: "NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark"; IEEE Transactions on Electron Devices, 61, (2014), 3586 - 3593 doi:10.1109/TED.2014.2353578. BibTeX |
| 506. | T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr: "Novel Bias-Field-Free Spin Transfer Oscillator"; Journal of Applied Physics, 115, (2014), 17C901-1 - 17C901-3 doi:10.1063/1.4862936. BibTeX |
| 505. | N. Ghobadi, M. Pourfath: "On the Role of Disorder on Graphene and Graphene Nanoribbon-Based Vertical Tunneling Transistors"; Journal of Applied Physics, 116, (2014), 1845061 - 1845067 doi:10.1063/1.4901584. BibTeX |
| 504. | A. Mojibpour, M. Pourfath, H. Kosina: "Optimization Study of Third Harmonic Generation in Quantum Cascade Lasers"; Optics Express, 22, (2014), 20607 - 20612 doi:10.1364/OE.22.020607. BibTeX |
| 503. | B. Lorenzi, D. Narducci, R. Tonini, S. Frabboni, G. Gazzadi, G. Ottaviani, N. Neophytou, X. Zianni: "Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids"; Journal of Electronic Materials, 43, (2014), 3812 - 3816 doi:10.1007/s11664-014-3170-x. BibTeX |
| 502. | M. Bina, S. E. Tyaginov, J. Franco, K. Rupp, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser: "Predictive Hot-Carrier Modeling of n-Channel MOSFETs"; IEEE Transactions on Electron Devices, 61, (2014), 3103 - 3110 doi:10.1109/TED.2014.2340575. BibTeX |
| 501. | A. Makarov, V. Sverdlov, S. Selberherr: "Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer"; International Journal of High Speed Electronics and Systems, 23, (invited) (2014), 1450014-1 - 1450014-15 doi:10.1142/S0129156414500141. BibTeX |
| 500. | H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates"; Advanced Materials Research - Print/CD, 854, (2014), 89 - 95 doi:10.4028/www.scientific.net/AMR.854.89. BibTeX |
| 499. | J. Kuzmik, M. Tapajna, L. Válik, M. Molnar, D. Donoval, C. Fleury, D. Pogany, G. Strasser, O. Hilt, F. Brunner, J. Würfl: "Self-Heating in GaN Transistors Designed for High-Power Operation"; IEEE Transactions on Electron Devices, 61, (2014), 3429 - 3434 doi:10.1109/TED.2014.2350516. BibTeX |
| 498. | M. Molnar, D. Donoval, J. Kuzmik, J. Marek, A. Chvala, P. Pribytny, V. Mikolasek, K. Rendek, V. Palankovski: "Simulation Study of Interface Traps and Bulk Traps in n++GaN/InAlN/AlN/GaN High Electron Mobility Transistors"; Applied Surface Science, 312, (2014), 157 - 161 doi:10.1016/j.apsusc.2014.04.078. BibTeX |
| 497. | J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr: "Spin Injection and Diffusion in Silicon Based Devices from a Space Charge Layer"; Journal of Applied Physics, 115, (2014), 17C503-1 - 17C503-3 doi:10.1063/1.4856056. BibTeX |
| 496. | J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr: "Spin Injection in a Semiconductor Through a Space-Charge Layer"; Solid-State Electronics, 101, (2014), 116 - 121 doi:10.1016/j.sse.2014.06.035. BibTeX |
| 495. | S. Soleimani Kahnoj, S. Touski, M. Pourfath: "The Effect of Electron-Electron Interaction Induced Dephasing on Electronic Transport in Graphene Nanoribbons"; Applied Physics Letters, 105, (2014), 1035021 - 1035024 doi:10.1063/1.4894859. BibTeX |
| 494. | L. Filipovic, S. Selberherr: "The Effects of Etching and Deposition on the Performance and Stress Evolution of Open Through Silicon Vias"; Microelectronics Reliability, 54, (2014), 1953 - 1958 doi:10.1016/j.microrel.2014.07.014. BibTeX |
| 493. | F. Rudolf, J. Weinbub, K. Rupp, S. Selberherr: "The Meshing Framework ViennaMesh for Finite Element Applications"; Journal of Computational and Applied Mathematics, 270, (2014), 166 - 177 doi:10.1016/j.cam.2014.02.005. BibTeX |
| 492. | S. Wolf, N. Neophytou, H. Kosina: "Thermal Conductivity of Silicon Nanomeshes: Effects of Porosity and Roughness"; Journal of Applied Physics, 115, (2014), 204306 - 204313 doi:10.1063/1.4879242. BibTeX |
| 491. | J. Weinbub, K. Rupp, S. Selberherr: "ViennaX: A Parallel Plugin Execution Framework for Scientific Computing"; Engineering with Computers, 30, (2014), 651 - 668 doi:10.1007/s00366-013-0314-1. BibTeX |
| 490. | S. M. Tabatabaei, M. Noei, K. Khaliji, M. Pourfath, M. Fathipour: "A First-Principles Study on the Effect of Biaxial Strain on the Ultimate Performance of Monolayer MoS2-Based Double Gate Field Effect Transistor"; Journal of Applied Physics, 113, (2013), 163708-1 - 163708-6 doi:10.1063/1.4803032. BibTeX |
| 489. | M. I. Vexler, S. E. Tyaginov, Yu. Illarionov, Y. K. Sing, A. D. Shenp, V. V. Fedorov, D. V. Isakov: "A General Simulation Procedure for the Electrical Characteristics of Metal Insulator Semiconductor Tunnel Structures"; Semiconductors (Physics of Semiconductor Devices), 47, (2013), 686 - 694 doi:10.1134/S1063782613050230. BibTeX |
| 488. | L. Filipovic, S. Selberherr: "A Method for Simulating Atomic Force Microscope Nanolithography in the Level Set Framework"; Microelectronic Engineering, 107, (2013), 23 - 32 doi:10.1016/j.mee.2013.02.083. BibTeX |
| 487. | L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Seinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger: "A Method for Simulating Spray Pyrolysis Deposition in the Level Set Framework"; Engineering Letters, 21, (invited) (2013), 224 - 240. BibTeX |
| 486. | A. S. Starkov, O. V. Pakhomov, I. Starkov: "Account for Mutual Influence of Electrical, Elastic, and Thermal Phenomena for Ferroelectric Domain Wall Modeling"; Ferroelectrics, 442, (2013), 10 - 17 doi:10.1080/00150193.2013.773854. BibTeX |
| 485. | G. Pobegen, M. Nelhiebel, S. de Filippis, T. Grasser: "Accurate High Temperature Measurements Using Local Polysilicon Heater Structures"; IEEE Transactions on Device and Materials Reliability, 99, (2013), 1 - 8 doi:10.1109/TDMR.2013.2265015. BibTeX |
| 484. | N. Neophytou, H. Karamitaheri, H. Kosina: "Atomistic Calculations of the Electronic, Thermal, and Thermoelectric Properties of Ultra-Thin Si Layers"; Journal of Computational Electronics, 12, (2013), 611 - 622 doi:10.1007/s10825-013-0522-3. BibTeX |
| 483. | H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "Atomistic Study of the Lattice Thermal Conductivity of Rough Graphene Nanoribbons"; IEEE Transactions on Electron Devices, 60, (2013), 2142 - 2147 doi:10.1109/TED.2013.2262049. BibTeX |
| 482. | H. Karamitaheri, N. Neophytou, H. Kosina: "Ballistic Phonon Transport in Ultra-Thin Silicon Layers: Effects of Confinement and Orientation"; Journal of Applied Physics, 113, (2013), 204305-1 - 204305-9 doi:10.1063/1.4808100. BibTeX |
| 481. | H. Karamitaheri, N. Neophytou, M. Karami Taheri, R. Faez, H. Kosina: "Calculation of Confined Phonon Spectrum in Narrow Silicon Nanowires Using the Valence Force Field Method"; Journal of Electronic Materials, 42, (2013), 2091 - 2097 doi:10.1007/s11664-013-2533-z. BibTeX |
| 480. | D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr: "Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors"; Sains Malaysiana, 42, (2013), 205 - 211. BibTeX |
| 479. | P. Schwaha, D. Querlioz, P. Dollfus, J. Saint-Martin, M. Nedjalkov, S. Selberherr: "Decoherence Effects in the Wigner Function Formalism"; Journal of Computational Electronics, 12, (2013), 388 - 396 doi:10.1007/s10825-013-0480-9. BibTeX |
| 478. | J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr: "Decoherence and Time Reversibility: The Role of Randomness at Interfaces"; Journal of Applied Physics, 114, (2013), 174902-1 - 174902-7 doi:10.1063/1.4828736. BibTeX |
| 477. | A. S. Starkov, I. Starkov: "Domain Wall Motion for Slowly Varying Electric Field"; Ferroelectrics, 442, (2013), 1 - 9 doi:10.1080/00150193.2013.773852. BibTeX |
| 476. | G. Pobegen, T. Grasser: "Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps"; Materials Science Forum, 740-742, (2013), 757 - 760 doi:10.4028/www.scientific.net/MSF.740-742.757. BibTeX |
| 475. | B. Kaczer, M. Toledano-Luque, W. Gös, T. Grasser, G. Groeseneken: "Gate Current Random Telegraph Noise and Single Defect Conduction"; Microelectronic Engineering, 109, (2013), 123 - 125 doi:10.1016/j.mee.2013.03.110. BibTeX |
| 474. | H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Implication Logic Gates Using Spin-Transfer-Torque-Operated Magnetic Tunnel Junctions for Intrinsic Logic-In-Memory"; Solid-State Electronics, 84, (2013), 191 - 197 doi:10.1016/j.sse.2013.02.017. BibTeX |
| 473. | H. Mahmoudi, V. Sverdlov, S. Selberherr: "Influence of Geometry on the Memristive Behavior of Domain Wall Spintronic Memristors and its Applications for Measurement"; Journal of Superconductivity and Novel Magnetism, 26, (2013), 1745 - 1749 doi:10.1007/s10948-012-2034-y. BibTeX |
| 472. | Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov: "Light Emission from the Au/CaF2/p-Si(111) Capacitors: Evidence for an Elastic Electron Tunneling Through a Thin (1-2 nm) Fluoride Layer"; Thin Solid Films, 545, (2013), 580 - 583 doi:10.1016/j.tsf.2013.07.050. BibTeX |
| 471. | I. Starkov, H. Enichlmair: "Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in Long-Channel n-MOSFETs"; Journal of Vacuum Science & Technology B, 31, (2013), 01A118-1 - 01A118-7 doi:10.1116/1.4774106. BibTeX |
| 470. | T. Windbacher, H. Mahmoudi, A. Makarov, V. Sverdlov, S. Selberherr: "Multiple Purpose Spin Transfer Torque Operated Devices"; Facta Universitatis, 26, (2013), 227 - 238 doi:10.2298/FUEE1303227W. BibTeX |
| 469. | J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, Ph. J. Roussel, L. Witters, T. Grasser, G Groeseneken: "NBTI Reliability of SiGe and Ge Channel pMOSFETs With SiO2/HfO2 Dielectric Stack"; IEEE Transactions on Device and Materials Reliability, 13, (invited) (2013), 497 - 506 doi:10.1109/TDMR.2013.2281731. BibTeX |
| 468. | G. Pobegen, S. E. Tyaginov, M. Nelhiebel, T. Grasser: "Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation"; IEEE Electron Device Letters, 34, (2013), 939 - 941 doi:10.1109/LED.2013.2262521. BibTeX |
| 467. | G. Pobegen, T. Grasser: "On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale"; IEEE Transactions on Electron Devices, 60, (2013), 2148 - 2155 doi:10.1109/TED.2013.2264816. BibTeX |
| 466. | N. Neophytou, H. Kosina: "Optimizing Thermoelectric Power Factor by Means of a Potential Barrier"; Journal of Applied Physics, 114, (2013), 044315_1 - 044315-6 doi:10.1063/1.4816792. BibTeX |
| 465. | M. Nedjalkov, S. Selberherr, D.K. Ferry, D. Vasileska, P. Dollfus, D. Querlioz, I. Dimov, P. Schwaha: "Physical Scales in the Wigner-Boltzmann Equation"; Annals of Physics, 328, (2013), 220 - 237 doi:10.1016/j.aop.2012.10.001. BibTeX |
| 464. | N. Neophytou, X. Zianni, H. Kosina, S. Frabboni, B. Lorenzi, D. Narducci: "Power Factor Enhancement by Inhomogeneous Distribution of Dopants in Two-Phase Nanocrystalline Systems"; Journal of Electronic Materials, 43, (2013), 1896 - 1904 doi:10.1007/s11664-013-2898-z. BibTeX |
| 463. | D. Demidov, K. Ahnert, K. Rupp, P. Gottschling: "Programming CUDA and OpenCL: A Case Study Using Modern C++ Libraries"; SIAM Journal on Scientific Computing, 35, (2013), 453 - 472 doi:10.1137/120903683. BibTeX |
| 462. | T. Aichinger, M. Nelhiebel, T. Grasser: "Refined NBTI Characterization of Arbitrarily Stressed PMOS Devices at Ultra-low and Unique Temperatures"; Microelectronics Reliability, 53, (2013), 937 - 946 doi:10.1016/j.microrel.2013.03.007. BibTeX |
| 461. | H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits"; IEEE Transactions on Magnetics, 49, (2013), 5620 - 5628 doi:10.1109/TMAG.2013.2278683. BibTeX |
| 460. | M. Jurkovic, D. Gregusova, V. Palankovski, S. Hascik, M. Blaho, K. Cico, K. Frohlich, J. Carlin, N. Grandjean, J. Kuzmik: "Schottky-Barrier Normally Off GaN/InAlN/AlN/GaN HEMT With Selectively Etched Access Region"; IEEE Electron Device Letters, 34, (2013), 432 - 434 doi:10.1109/LED.2013.2241388. BibTeX |
| 459. | J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, T. Kauerauf, J. Mitard, L. Witters, T. Grasser, G. Groeseneken: "SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices-Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues"; IEEE Transactions on Electron Devices, 60, (2013), 405 - 412. BibTeX |
| 458. | J. Franco, B. Kaczer, Ph. J. Roussel, J. Mitard, M. Cho, L. Witters, T. Grasser, G. Groeseneken: "SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices-Part I: NBTI"; IEEE Transactions on Electron Devices, 60, (2013), 396 - 404 doi:10.1109/TED.2012.2225625. BibTeX |
| 457. | T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr: "Simulation Study of an Electrically Read- and Writable Magnetic Logic Gate"; Microelectronic Engineering, 112, (2013), 188 - 192 doi:10.1016/j.mee.2012.12.030. BibTeX |
| 456. | N. Neophytou, X. Zianni, H. Kosina, S. Frabboni, B. Lorenzi, D. Narducci: "Simultaneous Increase in Electrical Conductivity and Seebeck Coefficient in Highly Boron-Doped Nanocrystalline Si"; Nanotechnology, 24, (2013), 205402 doi:10.1088/0957-4484/24/20/205402. BibTeX |
| 455. | A. P. Singulani, H. Ceric, S. Selberherr: "Stress Evolution in the Metal Layers of TSVs with Bosch Scallops"; Microelectronics Reliability, 53, (2013), 1602 - 1605 doi:10.1016/j.microrel.2013.07.132. BibTeX |
| 454. | A. Makarov, V. Sverdlov, S. Selberherr: "Structural Optimization of MTJs with a Composite Free Layer"; Proceedings of SPIE, 8813, (invited) (2013), 88132Q-1 - 88132Q-9 doi:10.1117/12.2025568. BibTeX |
| 453. | D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr: "Subband Splitting and Surface Roughness Induced Spin Relaxation in (001) Silicon SOI MOSFETs"; Solid-State Electronics, 90, (2013), 34 - 38 doi:10.1016/j.sse.2013.02.055. BibTeX |
| 452. | S. Touski, M. Pourfath: "Substrate Surface Corrugation Effects on the Electronic Transport in Graphene Nanoribbons"; Applied Physics Letters, 103, (2013), 1435061 - 1435063 doi:10.1063/1.4824362. BibTeX |
| 451. | J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, M. Choa, T. Kauerauf, J. Mitard, G. Eneman, L. Witters, T. Grasser, G. Groeseneken: "Superior Reliability of High Mobility (Si)Ge Channel pMOSFETs"; Microelectronic Engineering, 109, (2013), 250 - 256 doi:10.1016/j.mee.2013.03.001. BibTeX |
| 450. | A. S. Starkov, O. V. Pakhomov, I. Starkov: "Theoretical Model for Thin Ferroelectric Films and the Multilayer Structures Based on Them"; Journal of Experimental and Theoretical Physics, 116, (2013), 987 - 994 doi:10.1134/S1063776113060149. BibTeX |
| 449. | M. Toledano-Luque, B. Kaczer, T. Grasser, Ph. J. Roussel, J. Franco, G. Groeseneken: "Toward a Streamlined Projection of Small Device Bias Temperature Instability Lifetime Distributions"; Journal of Vacuum Science & Technology B, 31, (2013), 01A114-1 - 01A114-4 doi:10.1116/1.4772587. BibTeX |
| 448. | G.G. Kareva, M. I. Vexler, Yu. Illarionov: "Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling Diode"; Microelectronic Engineering, 109, (2013), 270 - 273 doi:10.1016/j.mee.2013.03.063. BibTeX |
| 447. | J.-F. Mennemann, A. Jüngel, H. Kosina: "Transient Schrödinger-Poisson Simulations of a High-Frequency Resonant Tunneling Diode Oscillator"; Journal of Computational Physics, 239, (2013), 187 - 205 doi:10.1016/j.jcp.2012.12.009. BibTeX |
| 446. | K. Khaliji, M. Noei, S. M. Tabatabaei, M. Pourfath, M. Fathipour, Y. Abdi: "Tunable Bandgap in Bilayer Armchair Graphene Nanoribbons: Concurrent Influence of Electric Field and Uniaxial Strain"; IEEE Transactions on Electron Devices, 60, (2013), 2464 - 2470 doi:10.1109/TED.2013.2266300. BibTeX |
| 445. | H. Karamitaheri, N. Neophytou, H. Kosina: "Use of Atomistic Phonon Dispersion and Boltzmann Transport Formalism to Study the Thermal Conductivity of Narrow Si Nanowires"; Journal of Electronic Materials, 1, (2013), 1 - 8 doi:10.1007/s11664-013-2884-5. BibTeX |
| 444. | V. V. A. Camargo, B. Kaczer, G. Wirth, T. Grasser, G. Groeseneken: "Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits"; IEEE Transactions on Very Large Scale Integration (VLSI) Systems, PP, (2013), doi:10.1109/TVLSI.2013.2240323. BibTeX |
| 443. | O. Baumgartner, Z. Stanojevic, K. Schnass, M. Karner, H. Kosina: "VSP - A Quantum-Electronic Simulation Framework"; Journal of Computational Electronics, 12, (2013), 701 - 721 doi:10.1007/s10825-013-0535-y. BibTeX |
| 442. | M. Nedjalkov, P. Schwaha, S. Selberherr, J. M. Sellier, D. Vasileska: "Wigner Quasi-Particle Attributes - An Asymptotic Perspective"; Applied Physics Letters, 102, (2013), 163113-1 - 163113-4 doi:10.1063/1.4802931. BibTeX |
| 441. | M. Noei, M. Moradinasab, M. Fathipour: "A Computational Study of Ballistic Graphene Nanoribbon Field Effect Transistors"; Physica E: Low-dimensional Systems and Nanostructures, 44, (2012), 1780 - 1786 doi:10.1016/j.physe.2011.12.018. BibTeX |
| 440. | F. Schanovsky, O. Baumgartner, V. Sverdlov, T. Grasser: "A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS Structures"; Journal of Computational Electronics, 11, (2012), 218 - 224 doi:10.1007/s10825-012-0403-1. BibTeX |
| 439. | A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr: "A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons"; IEEE Transactions on Electron Devices, 59, (2012), 433 - 440 doi:10.1109/TED.2011.2173690. BibTeX |
| 438. | B. Schwarz, P. Reininger, H. Detz, T. Zederbauer, A. M. Andrews, S. Kalchmair, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser: "A bi-functional quantum cascade device for same-frequency lasing and detection"; Applied Physics Letters, 101, (2012), 1911091 - 1911094 doi:10.1063/1.4767128. BibTeX |
| 437. | M. Moradinasab, H. Nematian, M. Pourfath, M. Fathipour, H. Kosina: "Analytical Models of Approximations for Wave Functions and Energy Dispersion in Zigzag Graphene Nanoribbons"; Journal of Applied Physics, 111, (2012), 074318-1 - 074318-9 doi:10.1063/1.3702429. BibTeX |
| 436. | M. Vasicek, J. Cervenka, D. Esseni, P. Palestri, T. Grasser: "Applicability of Macroscopic Transport Models to Decananometer MOSFETs"; IEEE Transactions on Electron Devices, 59, (2012), 639 - 646 doi:10.1109/TED.2011.2181177. BibTeX |
| 435. | J. Franco, S. Graziano, B. Kaczer, F. Crupi, L. Ragnarsson, T. Grasser, G. Groeseneken: "BTI Reliability of Ultra-Thin EOT MOSFETs for Sub-Threshold Logic"; Microelectronics Reliability, 52, (2012), 1932 - 1935 doi:10.1016/j.microrel.2012.06.058. BibTeX |
| 434. | N. Neophytou, H. Kosina: "Bias-Induced Hole Mobility Increase in Narrow [111] and [110] Si Nanowire Transistors"; IEEE Electron Device Letters, 33, (2012), 652 - 654 doi:10.1109/LED.2012.2188879. BibTeX |
| 433. | J. Kuzmik, S. Vitanov, C. Dua, J. Carlin, C. Ostermaier, A. Alexewicz, G. Strasser, D. Pogany, E. Gornik, N. Grandjean, S. Delage, V. Palankovski: "Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors"; Japanese Journal of Applied Physics, 51, (2012), 054102-1 - 054102-5 doi:10.1143/JJAP.51.054102. BibTeX |
| 432. | N. Neophytou, H. Kosina: "Confinement-Induced Carrier Mobility Increase in Nanowires by Quantization of Warped Bands"; Solid-State Electronics, 70, (2012), 81 - 91 doi:10.1016/j.sse.2011.11.018. BibTeX |
| 431. | M. Toledano-Luque, B. Kaczer, J. Franco, Ph. J. Roussel, T. Grasser, G. Groeseneken: "Defect-Centric Perspective of Time-Dependent BTI Variability"; Microelectronics Reliability, 52, (2012), 1883 - 1890 doi:10.1016/j.microrel.2012.06.120. BibTeX |
| 430. | A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina: "Device Performance of Graphene Nanoribbon Field-Effect Transistors in the Presence of Line-Edge Roughness"; IEEE Transactions on Electron Devices, 59, (2012), 3527 - 3532 doi:10.1109/TED.2012.2218817. BibTeX |
| 429. | R. Orio, H. Ceric, S. Selberherr: "Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via"; Microelectronics Reliability, 52, (2012), 1981 - 1986 doi:10.1016/j.microrel.2012.07.021. BibTeX |
| 428. | A. Makarov, V. Sverdlov, S. Selberherr: "Emerging Memory Technologies: Trends, Challenges, and Modeling Methods"; Microelectronics Reliability, 52, (invited) (2012), 628 - 634 doi:10.1016/j.microrel.2011.10.020. BibTeX |
| 427. | H. Karamitaheri, N. Neophytou, M. Pourfath, R. Faez, H. Kosina: "Engineering Enhanced Thermoelectric Properties in Zigzag Graphene Nanoribbons"; Journal of Applied Physics, 111, (2012), 054501-1 - 054501-9 doi:10.1063/1.3688034. BibTeX |
| 426. | A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling"; IEEE Transactions on Magnetics, 48, (2012), 1289 - 1292 doi:10.1109/TMAG.2011.2173565. BibTeX |
| 425. | K. Rupp: "High-Level Manipulation of OpenCL-Based Subvectors and Submatrices"; Procedia Computer Science, 9, (2012), 1857 - 1866 doi:10.1016/j.procs.2012.04.204. BibTeX |
| 424. | S. Ahmed, K. D. Holland, N. Paydavosi, C. Rogers, A. Alam, N. Neophytou, D. Kienle, M. Vaidyanathan: "Impact of Effective Mass on the Scaling Behavior of the fT and fmax of III-V High-Electron-Mobility Transistors"; IEEE Transactions on Nanotechnology, 11, (2012), 1160 - 1173. BibTeX |
| 423. | J. Franco, B. Kaczer, M. Toledano-Luque, M. F. Bukhori, Ph. J. Roussel, T. Grasser, A. Asenov, G. Groeseneken: "Impact of Individual Charged Gate-Oxide Defects on the Entire ID -VG Characteristic of Nanoscaled FETs"; IEEE Electron Device Letters, 33, (2012), 779 - 781. BibTeX |
| 422. | A. Starkov, O. Pakhomov, I. Starkov: "Impact of the Pyroelectric Effect on Ferroelectric Phase Transitions"; Ferroelectrics, 427, (2012), 78 - 83 doi:10.1080/00150193.2012.674413. BibTeX |
| 421. | H. Ceric, R. Orio, S. Selberherr: "Interconnect Reliability Dependence on Fast Diffusivity Paths"; Microelectronics Reliability, 52, (invited) (2012), 1532 - 1538 doi:10.1016/j.microrel.2011.09.035. BibTeX |
| 420. | N. Neophytou, H. Kosina: "Large Thermoelectric Power Factor in P-Type Si (110)/[110] Ultra-Thin-Layers Compared to Differently Oriented Channels"; Journal of Applied Physics, 112, (2012), 024305-1 - 024305-6 doi:10.1063/1.4737122. BibTeX |
| 419. | F. Ortmann, S. Roche, J. C. Greer, G. Huhs, T. Shulthess, T. Deutsch, P. Weinberger, M. Payne, J. M. Sellier, J. Sprekels, J. Weinbub, K. Rupp, M. Nedjalkov, D. Vasileska, E. Alfi nito, L. Reggiani, D. Guerra, D.K. Ferry, M. Saraniti, S.M. Goodnick, A. Kloes, L. Colombo, K. Lilja, J. Mateos, T. Gonzalez, E. Velazquez, P. Palestri, A. Schenk, M. Macucci: "Multi-Scale Modelling for Devices and Circuits"; E-Nano Newsletter, Special Issue April 2012, (2012), 31 page(s) . BibTeX |
| 418. | K. Rott, H. Reisinger, S. Aresu, C. Schlünder, K. Kölpin, W. Gustin, T. Grasser: "New Insights on the PBTI Phenomena in SiON pMOSFETs"; Microelectronics Reliability, 52, (2012), 1891 - 1894 doi:10.1016/j.microrel.2012.06.015. BibTeX |
| 417. | N. Neophytou, H. Kosina: "Numerical Study of the Thermoelectric Power Factor in Ultra-Thin Si Nanowires"; Journal of Computational Electronics, 11, (invited) (2012), 29 - 44 doi:10.1007/s10825-012-0383-1. BibTeX |
| 416. | N. Neophytou, H. Kosina: "On the Interplay between Electrical Conductivity and Seebeck Coefficient in Ultra-Narrow Silicon Nanowires"; Journal of Electronic Materials, 41, (2012), 1305 - 1311 doi:10.1007/s11664-011-1891-7. BibTeX |
| 415. | H. Nematian, M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina: "Optical Properties of Armchair Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Lattices"; Journal of Applied Physics, 111, (2012), 093512-1 - 093512-6 doi:10.1063/1.4710988. BibTeX |
| 414. | S. Vitanov, V. Palankovski, S. Maroldt, R. Quay, S. Murad, T. Rödle, S. Selberherr: "Physics-Based Modeling of GaN HEMTs"; IEEE Transactions on Electron Devices, 59, (2012), 685 - 693 doi:10.1109/TED.2011.2179118. BibTeX |
| 413. | A. Starkov, O. Pakhomov, I. Starkov: "Solid-State Cooler: New Opportunities"; Ferroelectrics, 430, (2012), 108 - 114 doi:10.1080/00150193.2012.677730. BibTeX |
| 412. | T. Grasser: "Stochastic Charge Trapping in Oxides: From Random Telegraph Noise to Bias Temperature Instabilities"; Microelectronics Reliability, 52, (invited) (2012), 39 - 70 doi:10.1016/j.microrel.2011.09.002. BibTeX |
| 411. | H. Karamitaheri, N. Neophytou, M. Pourfath, H. Kosina: "Study of Thermal Properties of Graphene-Based Structures using the Force Constant Method"; Journal of Computational Electronics, 11, (invited) (2012), 14 - 21 doi:10.1007/s10825-011-0380-9. BibTeX |
| 410. | Z. Stanojevic, V. Sverdlov, O. Baumgartner, H. Kosina: "Subband Engineering in N-Type Silicon Nanowires using Strain and Confinement"; Solid-State Electronics, 70, (2012), 73 - 80 doi:10.1016/j.sse.2011.11.022. BibTeX |
| 409. | D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr: "Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built with InAs and Si Channels"; Solid-State Electronics, 71, (2012), 25 - 29 doi:10.1016/j.sse.2011.10.015. BibTeX |
| 408. | R. Orio, H. Ceric, S. Selberherr: "A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects"; Microelectronics Reliability, 51, (2011), 1573 - 1577 doi:10.1016/j.microrel.2011.07.049. BibTeX |
| 407. | R. Heinzl, P. Schwaha: "A Generic Topology Library"; Science of Computer Programming, 76, (2011), 324 - 346 doi:10.1016/j.scico.2009.09.007. BibTeX |
| 406. | I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements"; Solid State Phenomena, 178-179, (2011), 267 - 272 doi:10.4028/www.scientific.net/SSP.178-179.267. BibTeX |
| 405. | S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser: "An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation"; Microelectronics Reliability, 51, (2011), 1525 - 1529 doi:10.1016/j.microrel.2011.07.089. BibTeX |
| 404. | A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr: "An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene Nanoribbons"; IEEE Transactions on Electron Devices, 58, (2011), 3725 - 3735 doi:10.1109/TED.2011.2163719. BibTeX |
| 403. | N. Neophytou, H. Kosina: "Atomistic Simulations of Low-Field Mobility in Si Nanowires: Influence of Confinement and Orientation"; Physical Review B, 84, (2011), 085313-1 - 085313-15 doi:10.1103/PhysRevB.84.085313. BibTeX |
| 402. | W. Gös, F. Schanovsky, H. Reisinger, B. Kaczer, T. Grasser: "Bistable Defects as the Cause for NBTI and RTN"; Solid State Phenomena, 178-179, (invited) (2011), 473 - 482 doi:10.4028/www.scientific.net/SSP.178-179.473. BibTeX |
| 401. | M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, J. Franco, L. Ragnarsson, T. Grasser, G. Groeseneken: "Depth Localization of Positive Charge Trapped in Silicon Oxynitride Field Effect Transistors after Positive and Negative Gate Bias Temperature Stress"; Applied Physics Letters, 98, (2011), 183506-1 - 183506-3 doi:10.1063/1.3586780. BibTeX |
| 400. | N. Neophytou, H. Kosina: "Effects of Confinement and Orientation on the Thermoelectric Power Factor of Silicon Nanowires"; Physical Review B, 83, (2011), 245305-1 - 245305-16 doi:10.1103/PhysRevB.83.245305. BibTeX |
| 399. | H. Ceric, S. Selberherr: "Electromigration in Submicron Interconnect Features of Integrated Circuits"; Materials Science and Engineering R-Reports, 71, (2011), 53 - 86 doi:10.1016/j.mser.2010.09.001. BibTeX |
| 398. | H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "Geometrical Effects on the Thermoelectric Properties of Ballistic Graphene Antidot Lattices"; Journal of Applied Physics, 110, (2011), 054506-1 - 054506-6 doi:10.1063/1.3629990. BibTeX |
| 397. | H. Karamitaheri, M. Pourfath, M. Pazoki, R. Faez, H. Kosina: "Graphene-Based Antidots for Thermoelectric Applications"; Journal of the Electrochemical Society, 158, (2011), K213 - K216 doi:10.1149/2.025112jes. BibTeX |
| 396. | J. Lorenz, E. Bär, T. Clees, R. Jancke, C. Salzig, S. Selberherr: "Hierarchical Simulation of Process Variations and their Impact on Circuits and Systems: Methodology"; IEEE Transactions on Electron Devices, 58, (invited) (2011), 2218 - 2226 doi:10.1109/TED.2011.2150225. BibTeX |
| 395. | J. Lorenz, E. Bär, T. Clees, P. Evanschitzky, R. Jancke, C. Kampen, U. Paschen, C. Salzig, S. Selberherr: "Hierarchical Simulation of Process Variations and their Impact on Circuits and Systems: Results"; IEEE Transactions on Electron Devices, 58, (invited) (2011), 2227 - 2234 doi:10.1109/TED.2011.2150226. BibTeX |
| 394. | N. Neophytou, H. Kosina: "Hole Mobility Increase in Ultra-Narrow Si Channels under Strong (110) Surface Confinement"; Applied Physics Letters, 99, (2011), 092110-1 - 092110-3 doi:10.1063/1.3631680. BibTeX |
| 393. | I. Starkov, S. E. Tyaginov, H. Enichlmair, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser: "Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment"; Journal of Vacuum Science & Technology B, 29, (2011), 01AB09-1 - 01AB09-8 doi:10.1116/1.3534021. BibTeX |
| 392. | G. Pobegen, T. Aichinger, T. Grasser, M. Nelhiebel: "Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs"; Microelectronics Reliability, 51, (2011), 1530 - 1534 doi:10.1016/j.microrel.2011.06.024. BibTeX |
| 391. | H. Rabiee Golgir, R. Faez, M. Pazoki, H. Karamitaheri, R. Sarvari: "Investigation of Quantum Conductance in Semiconductor Single-Wall Carbon Nanotubes: Effect of Strain and Impurity"; Journal of Applied Physics, 110, (2011), 064320-1 - 064320-6 doi:10.1063/1.3641981. BibTeX |
| 390. | F. Schanovsky, W. Gös, T. Grasser: "Multiphonon Hole Trapping from First Principles"; Journal of Vacuum Science & Technology B, 29, (2011), 01A201-1 - 01A201-5 doi:10.1116/1.3533269. BibTeX |
| 389. | A. Garcia-Barrientos, V. Palankovski: "Numerical Simulations of Amplification of Space Charge Waves in n-InP Films"; Materials Science and Engineering B, 176, (2011), 1368 - 1372 doi:10.1016/j.mseb.2011.02.014. BibTeX |
| 388. | A. Garcia-Barrientos, V. Palankovski: "Numerical Simulations of Space Charge Waves in InP Films and Microwave Frequency Conversion under Negative Differential Conductivity"; Applied Physics Letters, 98, (2011), 072110-1 - 072110-3 doi:10.1063/1.3555467. BibTeX |
| 387. | J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, Ph. Hehenberger, T. Grasser, J. Mitard, G. Eneman, T. Y. Hoffmann, G. Groeseneken: "On the Impact of the Si Passivation Layer Thickness on the NBTI of Nanoscaled Si0.45Ge0.55 pMOSFETs"; Microelectronic Engineering, 88, (2011), 1388 - 1391 doi:10.1016/j.mee.2011.03.065. BibTeX |
| 386. | A. S. Starkov, O. V. Pakhomov, I. Starkov: "Parametric Enhancement of Electrocaloric Effect by Periodically Varying External Field"; Technical Physics Letters, 79, (2011), 1139 - 1141 doi:10.1134/S1063785011120133. BibTeX |
| 385. | N. Manavizadeh, F. Raissi, E.A. Soleimani, M. Pourfath, S. Selberherr: "Performance Assessment of Nanoscale Field Effect Diodes"; IEEE Transactions on Electron Devices, 58, (2011), 2378 - 2384 doi:10.1109/TED.2011.2152844. BibTeX |
| 384. | O. Baumgartner, V. Sverdlov, T. Windbacher, S. Selberherr: "Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Thin Films"; IEEE Transactions on Nanotechnology, 10, (2011), 737 - 743 doi:10.1109/TNANO.2010.2074211. BibTeX |
| 383. | B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. Cho, E. Simoen, G. Groeseneken: "Recent Trends in Bias Temperature Instability"; Journal of Vacuum Science & Technology B, 29, (invited) (2011), 01AB01-1 - 01AB01-7. BibTeX |
| 382. | A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Reduction of Switching Time in Pentalayer Magnetic Tunnel Junctions with a Composite-Free Layer"; Physica Status Solidi - Rapid Research Letters, 5, (2011), 420 - 422 doi:10.1002/pssr.201105376. BibTeX |
| 381. | A. Makarov, V. Sverdlov, S. Selberherr: "Stochastic Model of the Resistive Switching Mechanism in Bipolar Resistive Random Access Memory: Monte Carlo Simulations"; Journal of Vacuum Science & Technology B, 29, (2011), 01AD03-1 - 01AD03-5 doi:10.1116/1.3521503. BibTeX |
| 380. | J. Cervenka, H. Kosina, S. Selberherr, J. Zhang, N. Hrauda, J. Stangl, G. Bauer, G. Vastola, A. Marzegalli, F. Montalenti, L. Miglio: "Strained MOSFETs on Ordered SiGe Dots"; Solid-State Electronics, 65-66, (2011), 81 - 87 doi:10.1016/j.sse.2011.06.041. BibTeX |
| 379. | N. Neophytou, G. Klimeck, H. Kosina: "Subband Engineering for P-Type Silicon Ultra-Thin Layers for Increased Carrier Velocities"; Journal of Applied Physics, 109, (2011), 053721-1 - 053721-6 doi:10.1063/1.3556435. BibTeX |
| 378. | M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, M. Cho, T. Grasser, G. Groeseneken: "Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature Stress"; Journal of Vacuum Science & Technology B, 29, (2011), 01AA04-1 - 01AA04-5 doi:10.1116/1.3532947. BibTeX |
| 377. | A. Dedyk, Y. Pavlova, S. Karmanenko, A. Semenov, D. Semikin, O. Pakhomov, A. Starkov, I. Starkov: "Temperature Hysteresis of the Capacitance Dependence C(T) for Ferroelectric Ceramics"; Journal of Vacuum Science & Technology B, 29, (2011), 01A501-1 - 01A501-5 doi:10.1116/1.3532944. BibTeX |
| 376. | M. Toledano-Luque, B. Kaczer, E. Simoen, Ph. J. Roussel, A. Veloso, T. Grasser, G. Groeseneken: "Temperature and Voltage Dependences of the Capture and Emission Times of Individual Traps in High-k Dielectrics"; Microelectronic Engineering, 88, (2011), 1243 - 1246 doi:10.1016/j.mee.2011.03.097. BibTeX |
| 375. | K. Rupp, S. Selberherr: "The Economic Limit to Moore's Law"; IEEE Transactions on Semiconductor Manufacturing, 24, (2011), 1 - 4 doi:10.1109/TSM.2010.2089811. BibTeX |
| 374. | T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, M. Toledano-Luque, M. Nelhiebel: "The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps"; IEEE Transactions on Electron Devices, 58, (invited) (2011), 3652 - 3666. BibTeX |
| 373. | N. Neophytou, H. Kosina: "Thermoelectric Properties of Ultra Scaled Silicon Nanowires Using the sp3d5s*-SO Atomistic Tight-Binding Model and Boltzmann Transport"; Journal of Electronic Materials, 40, (2011), 753 - 758 doi:10.1007/s11664-011-1542-z. BibTeX |
| 372. | G. Milovanovic, H. Kosina: "A Semiclassical Transport Model for Quantum Cascade Lasers based on the Pauli Master Equation"; Journal of Computational Electronics, 9, (2010), 211 - 217 doi:10.1007/s10825-010-0325-8. BibTeX |
| 371. | F. Schanovsky, W. Gös, T. Grasser: "An Advanced Description of Oxide Traps in MOS Transistors and its Relation to DFT"; Journal of Computational Electronics, 9, (invited) (2010), 135 - 140 doi:10.1007/s10825-010-0323-x. BibTeX |
| 370. | N. Neophytou, M. Wagner, H. Kosina, S. Selberherr: "Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model"; Journal of Electronic Materials, 39, (2010), 1902 - 1908 doi:10.1007/s11664-009-1035-5. BibTeX |
| 369. | A. Lugstein, M. Steinmair, A. Steiger-Thirsfeld, H. Kosina, E. Bertagnolli: "Anomalous Piezoresistance Effect in Ultrastrained Silicon Nanowires"; Nano Letters, 10, (2010), 3204 - 3208 doi:10.1021/nl102179c. BibTeX |
| 368. | R. Huang, A. Taylor, S. Himmelsbach, H. Ceric, T. Detzel: "Apparatus for Measuring Local Stress of Metallic Films, Using an Array of Parallel Laser Beams during Rapid Thermal Processing"; Measurement Science & Technology, 21, (2010), 55702 - 55710. BibTeX |
| 367. | M. Nedjalkov, H. Kosina, P. Schwaha: "Device Modeling in the Wigner Picture"; Journal of Computational Electronics, 9, (2010), 218 - 223 doi:10.1007/s10825-010-0316-9. BibTeX |
| 366. | A. S. Starkov, O. V. Pakhomov, I. Starkov: "Effect of Thermal Phenomena on a Second-Order Phase Transition in the Landau-Ginzburg Model"; JETP Letters, 91, (2010), 507 - 511. BibTeX |
| 365. | S. Maroldt, D. Wiegner, S. Vitanov, V. Palankovski, R. Quay, O. Ambacher: "Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz"; IEICE Transactions on Electronics, E93-C, (2010), 1238 - 1244. BibTeX |
| 364. | S. E. Tyaginov, M. Vexler, A. El Hdiy, K. Gacem, V Zaporojtchenko: "Electrical Methods for Estimating the Correlation Length of Insulator Thickness Fluctuations in MIS Tunnel Structures"; Materials Science in Semiconductor Processing, 13, (2010), 405 - 410 doi:10.1016/j.mssp.2011.07.003. BibTeX |
| 363. | T. Windbacher, V. Sverdlov, O. Baumgartner, S. Selberherr: "Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 1 Analytical Consideration and Strain-Induced Valley Splitting"; Solid-State Electronics, 54, (2010), 137 - 142 doi:10.1016/j.sse.2009.12.008. BibTeX |
| 362. | O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina: "Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 2 Efficient Self-Consistent Numerical Solution of the k.p Schrödinger Equation"; Solid-State Electronics, 54, (2010), 143 - 148 doi:10.1016/j.sse.2009.12.010. BibTeX |
| 361. | T. Aichinger, M. Nelhiebel, T. Grasser: "Energetic Distribution of Oxide Traps created under Negative Bias Temperature Stress and their Relation to Hydrogen"; Applied Physics Letters, 96, (2010), 133511-1 - 133511-3. BibTeX |
| 360. | S. Vitanov, V. Palankovski, S. Maroldt, R. Quay: "High-Temperature Modeling of AlGaN/GaN HEMTs"; Solid-State Electronics, 54, (2010), 1105 - 1112 doi:10.1016/j.sse.2010.05.026. BibTeX |
| 359. | T. Aichinger, M. Nelhiebel, S. Einspieler, T. Grasser: "In Situ Poly Heater-A Reliable Tool for Performing Fast and Defined Temperature Switches on Chip"; IEEE Transactions on Device and Materials Reliability, 10, (2010), 3 - 8. BibTeX |
| 358. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Microelectronics Reliability, 50, (2010), 1267 - 1272 doi:10.1016/j.microrel.2010.0. BibTeX |
| 357. | N. Neophytou, H. Kosina: "Large Enhancement in Hole Velocity and Mobility in p-type [110] and [111] Silicon Nanowires by Cross Section Scaling: An Atomistic Analysis"; Nano Letters, 10, (2010), 4913 - 4919 doi:10.1021/nl102875k. BibTeX |
| 356. | K. Rupp, A. Jüngel, T. Grasser: "Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation for Semiconductors"; Journal of Computational Physics, 229, (2010), 8750 - 8765. BibTeX |
| 355. | J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair: "Observations of Negative Bias Temperature Instability Defect Generation via On The Fly Electron Spin Resonance"; Applied Physics Letters, 96, (2010), 223509-1 - 223509-3 doi:10.1063/1.3428783. BibTeX |
| 354. | T. Aichinger, M. Nelhiebel, S. Einspieler, T. Grasser: "Observing Two Stage Recovery of Gate Oxide Damage Created under Negative Bias Temperature Stress"; Journal of Applied Physics, 107, (2010), 024508-1 - 024508-8. BibTeX |
| 353. | N. Neophytou, S. Kim, G. Klimeck, H. Kosina: "On the Bandstructure Velocity and Ballistic Current of Ultra-Narrow Silicon Nanowire Transistors as a Function of Cross Section Size, Orientation, and Bias"; Journal of Applied Physics, 107, (2010), 113701-1 - 113701-9 doi:10.1063/1.3372764. BibTeX |
| 352. | R. Orio, H. Ceric, S. Selberherr: "Physically based Models of Electromigration: From Black´s Equation to Modern TCAD Models"; Microelectronics Reliability, 50, (invited) (2010), 775 - 789 doi:10.1016/j.microrel.2010.01.007. BibTeX |
| 351. | B. Kaczer, Ph. J. Roussel, T. Grasser, G. Groeseneken: "Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI"; IEEE Electron Device Letters, 31, (2010), 411 - 413 doi:10.1109/LED.2010.2044014. BibTeX |
| 350. | A. Makarov, V. Sverdlov, S. Selberherr: "Stochastic Modeling of Bipolar Resistive Switching in Metal-Oxide based Memory by Monte Carlo Technique"; Journal of Computational Electronics, 9, (2010), 146 - 152 doi:10.1007/s10825-010-0317-8. BibTeX |
| 349. | R. Huang, W. Robl, H. Ceric, T. Detzel, G. Dehm: "Stress, Sheet Resistance, and Microstructure Evolution of Electroplated Cu Films During Self-Annealing"; IEEE Transactions on Device and Materials Reliability, 10, (2010), 47 - 54 doi:10.1109/TDMR.2009.2032768. BibTeX |
| 348. | K. Rupp, S. Selberherr: "The Economic Limit to Moore´s Law"; Proceedings of the IEEE, 98, (2010), 351 - 353 doi:10.1109/JPROC.2010.2040205. BibTeX |
| 347. | O. Ertl, S. Selberherr: "Three-Dimensional Level Set Based Bosch Process Simulations using Ray Tracing for Flux Calculation"; Microelectronic Engineering, 87, (2010), 20 - 29 doi:10.1016/j.mee.2009.05.011. BibTeX |
| 346. | T. Grasser, H. Reisinger, P.-J. Wagner, B. Kaczer: "Time-Dependent Defect Spectroscopy for Characterization of Border Traps in Metal-Oxide-Semiconductor Transistors"; Physical Review B, 82, (2010), 245318-1 - 245318-10 doi:10.1103/PhysRevB.82.245318. BibTeX |
| 345. | T. Aichinger, M. Nelhiebel, T. Grasser: "A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTI"; IEEE Transactions on Electron Devices, 56, (2009), 3018 - 3026. BibTeX |
| 344. | H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects"; IEEE Transactions on Device and Materials Reliability, 9, (2009), 9 - 19 doi:10.1109/TDMR.2008.2000893. BibTeX |
| 343. | O. Ertl, S. Selberherr: "A Fast Level Set Framework for Large Three-Dimensional Topography Simulations"; Computer Physics Communications, 180, (2009), 1242 - 1250 doi:10.1016/j.cpc.2009.02.002. BibTeX |
| 342. | H. Reisinger, R. Vollertsen, P.-J. Wagner, T. Huttner, A. Martin, S. Aresu, W. Gustin, T. Grasser, C. Schlünder: "A Study of NBTI and Short-Term Threshold Hysteresis of Thin Nitrided and Thick Non-Nitrided Oxides"; IEEE Transactions on Device and Materials Reliability, 9, (2009), 106 - 114 doi:10.1109/TDMR.2009.2021389. BibTeX |
| 341. | R. Orio, H. Ceric, S. Selberherr: "Analysis of Electromigration in Dual-Damascene Interconnect Structures"; Journal Integrated Circuits and Systems, 4, (2009), 67 - 72 doi:10.29292/jics.v4i2.300. BibTeX |
| 340. | C. Poschalko, S. Selberherr: "Cavity Model for the Slot Radiation of an Enclosure Excited by Printed Circuit Board Traces With Different Loads"; IEEE Transactions on Electromagnetic Compatibility, 51, (2009), 18 - 24 doi:10.1109/TEMC.2008.2008815. BibTeX |
| 339. | M. Pourfath, H. Kosina: "Computational Study of Carbon-Based Electronics"; Journal of Computational Electronics, 8, (2009), 427 - 440 doi:10.1007/s10825-009-0285-z. BibTeX |
| 338. | S. E. Tyaginov, M. Vexler, N. S. Sokolov, S. M. Suturin, A. Banshchikov, T. Grasser, B. Meinerzhagen: "Determination of Correlation Length for Thickness Fluctuations in Thin Oxide and Fluoride Films"; Journal of Physics D: Applied Physics, 42, (2009), 1 - 6 doi:10.1088/0022-3727/42/11/115307. BibTeX |
| 337. | M. Vexler, N. S. Sokolov, S. M. Suturin, A. Banshchikov, S. E. Tyaginov, T. Grasser: "Electrical Characterization and Modeling of the Au/CaF2/nSi(111) Sructures with High-Quality Tunnel-Thin Fluoride Layer"; Journal of Applied Physics, 105, (2009), 1 - 6 doi:10.1063/1.3110066. BibTeX |
| 336. | T. Grasser, B. Kaczer: "Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs"; IEEE Transactions on Electron Devices, 56, (2009), 1056 - 1062 doi:10.1109/TED.2009.2015160. BibTeX |
| 335. | R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr: "GUIDE: Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment"; International Journal of Parallel, Emergent and Distributed Systems, 24, (2009), 505 - 520 doi:10.1080/17445760902758545. BibTeX |
| 334. | S. E. Tyaginov, V. Sverdlov, I. Starkov, W. Gös, T. Grasser: "Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate"; Microelectronics Reliability, 49, (2009), 998 - 1002 doi:10.1016/j.microrel.2009.06.018. BibTeX |
| 333. | B. Kaczer, A. Veloso, Ph. J. Roussel, T. Grasser, G. Groeseneken: "Investigation of Bias-Temperature Instability in Work-Function-Tuned High-k/Metal-Gate Stacks"; Journal of Vacuum Science & Technology B, 27, (2009), 459 - 462. BibTeX |
| 332. | V. Sverdlov, T. Windbacher, F. Schanovsky, S. Selberherr: "Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress"; Journal Integrated Circuits and Systems, 4, (2009), 55 - 60 doi:10.29292/jics.v4i2.298. BibTeX |
| 331. | V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr: "Modeling of Modern MOSFETs with Strain"; Journal of Computational Electronics, 8, (invited) (2009), 192 - 208 doi:10.1007/s10825-009-0291-1. BibTeX |
| 330. | A. Garcia-Barrientos, V. Grimalsky, E. Gutierrez-Dominguez, V. Palankovski: "Nonstationary Effects of the Space Charge in Semiconductor Structures"; Journal of Applied Physics, 105, (2009), 074501-1 - 074501-6 doi:10.1063/1.3093689. BibTeX |
| 329. | G. Milovanovic, O. Baumgartner, H. Kosina: "On Open Boundary Conditions for Quantum Cascade Structures"; Optical and Quantum Electronics, 41, (2009), 921 - 932 doi:10.1007/s11082-010-9406-y. BibTeX |
| 328. | Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser: "On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress"; Microelectronics Reliability, 49, (2009), 1013 - 1017 doi:10.1016/j.microrel.2009.06.040. BibTeX |
| 327. | P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr: "Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications"; International Journal of Parallel, Emergent and Distributed Systems, 24, (2009), 539 - 549 doi:10.1080/17445760902758552. BibTeX |
| 326. | T. Grasser, B. Kaczer, W. Gös, T. Aichinger, Ph. Hehenberger, M. Nelhiebel: "Understanding Negative Bias Temperature Instability in the Context of Hole Trapping"; Microelectronic Engineering, 86, (invited) (2009), 1876 - 1882. BibTeX |
| 325. | M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser: "A 2D Non-Parabolic Six-Moments Model"; Solid-State Electronics, 52, (2008), 1606 - 1609 doi:10.1016/j.sse.2008.06.010. BibTeX |
| 324. | T. Grasser, P.-J. Wagner, Ph. Hehenberger, W. Gös, B. Kaczer: "A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability"; IEEE Transactions on Device and Materials Reliability, 8, (2008), 526 - 535 doi:10.1109/TDMR.2008.2002353. BibTeX |
| 323. | K. Martens, B. Kaczer, T. Grasser, B. Jaeger, M. Meuris, H.E. Maes, G. Groeseneken: "Applicability of Charge Pumping on Germanium MOSFETs"; IEEE Electron Device Letters, 29, (2008), 1364 - 1366 doi:10.1109/LED.2008.2007582. BibTeX |
| 322. | W. Gös, M. Karner, V. Sverdlov, T. Grasser: "Charging and Discharging of Oxide Defects in Reliability Issues"; IEEE Transactions on Device and Materials Reliability, 8, (2008), 491 - 500 doi:10.1109/TDMR.2008.2005247. BibTeX |
| 321. | V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr: "Current Transport Models for Nanoscale Semiconductor Devices"; Materials Science and Engineering R-Reports, 58, (2008), 228 - 270 doi:10.1016/j.mser.2007.11.001. BibTeX |
| 320. | T. Grasser, W. Gös, B. Kaczer: "Dispersive Transport and Negative Bias Temperature Instability: Boundary Conditions, Initial Conditions, and Transport Models"; IEEE Transactions on Device and Materials Reliability, 8, (invited) (2008), 79 - 97 doi:10.1109/TDMR.2007.912779. BibTeX |
| 319. | G. Karlowatz, W. Wessner, H. Kosina: "Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation"; Mathematics and Computers in Simulation, 79, (2008), 972 - 979 doi:10.1016/j.matcom.2008.02.021. BibTeX |
| 318. | R. Orio, H. Ceric, S. Selberherr: "Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress"; Journal of Computational Electronics, 7, (2008), 128 - 131 doi:10.1007/s10825-008-0211-9. BibTeX |
| 317. | V. Sverdlov, H. Kosina, S. Selberherr: "Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory"; Journal of Computational Electronics, 7, (2008), 164 - 167 doi:10.1007/s10825-008-0177-7. BibTeX |
| 316. | V. Sverdlov, S. Selberherr: "Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond"; Solid-State Electronics, 52, (2008), 1861 - 1866 doi:10.1016/j.sse.2008.06.054. BibTeX |
| 315. | M. Pourfath, H. Kosina: "Formalism Application of the Non-Equilibrium Green's Function for the Numerical Analysis of Carbon Nanotube Fets"; Journal of Computational and Theoretical Nanoscience, 5, (2008), 1128 - 1137 doi:10.1166/jctn.2008.011. BibTeX |
| 314. | P. Lenahan, B. Knowlton, J. Conley, B. Tonti, J. Suehle, T. Grasser: "Introduction to the Special Issue on the 2007 International Integrated Reliability Workshop"; IEEE Transactions on Device and Materials Reliability, 8, (2008), 490. BibTeX |
| 313. | K. Raleva, D. Vasileska, S.M. Goodnick, M. Nedjalkov: "Modeling Thermal Effects in Nanodevices"; IEEE Transactions on Electron Devices, 55, (2008), 1306 - 1316. BibTeX |
| 312. | S. Vainshtein, V. Yuferev, V. Palankovski, D. Ong, J. Kostamovaara: "Negative Differential Mobility in GaAs at Ultrahigh Fields: Comparison between an Experiment and Simulations"; Applied Physics Letters, 92, (2008), 062114-1 - 062114-3 doi:10.1063/1.2870096. BibTeX |
| 311. | S. Vitanov, V. Palankovski: "Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study"; Solid-State Electronics, 52, (2008), 1791 - 1795 doi:10.1016/j.sse.2008.07.011. BibTeX |
| 310. | M. Pourfath, H. Kosina, S. Selberherr: "Numerical Study of Quantum Transport in Carbon Nanotube Transistors"; Mathematics and Computers in Simulation, 79, (2008), 1051 - 1059 doi:10.1016/j.matcom.2007.09.004. BibTeX |
| 309. | T. Aichinger, M. Nelhiebel, T. Grasser: "On the Temperature Dependence of NBTI Recovery"; Microelectronics Reliability, 48, (2008), 1178 - 1184 doi:10.1016/j.microrel.2008.06.018. BibTeX |
| 308. | M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser: "Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs"; Journal of Computational Electronics, 7, (2008), 168 - 173 doi:10.1007/s10825-008-0239-x. BibTeX |
| 307. | M. Nedjalkov, D. Vasileska: "Semi-Discrete 2D Wigner-Particle Approach"; Journal of Computational Electronics, 7, (2008), 222 - 225 doi:10.1007/s10825-008-0197-3. BibTeX |
| 306. | M. Pourfath, H. Kosina, S. Selberherr: "The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance"; Journal of Physics: Conference Series, 109, (2008), 1 - 5 doi:10.1088/1742-6596/109/1/012029. BibTeX |
| 305. | E. Ungersböck, W. Gös, S. Dhar, H. Kosina, S. Selberherr: "The Effect of Uniaxial Stress on Band Structure and Electron Mobility of Silicon"; Mathematics and Computers in Simulation, 79, (2008), 1071 - 1077 doi:10.1016/j.matcom.2007.10.004. BibTeX |
| 304. | J. Cervenka, H. Ceric, S. Selberherr: "Three-Dimensional Simulation of Sacrificial Etching"; Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems, 14, (2008), 665 - 671 doi:10.1007/s00542-007-0491-1. BibTeX |
| 303. | V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr: "Two-Band k.p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility"; Solid-State Electronics, 52, (2008), 1563 - 1568 doi:10.1016/j.sse.2008.06.019. BibTeX |
| 302. | M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, W. Gös, M. Vasicek, O. Baumgartner, Ch. Kernstock, K. Schnass, G. Zeiler, T. Grasser, H. Kosina, S. Selberherr: "A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications"; Journal of Computational Electronics, 6, (2007), 179 - 182 doi:10.1007/s10825-006-0077-7. BibTeX |
| 301. | R. Wittmann, S. Selberherr: "A Study of Ion Implantation into Crystalline Germanium"; Solid-State Electronics, 51, (2007), 982 - 988 doi:10.1016/j.sse.2007.03.019. BibTeX |
| 300. | M. Movahhedi, A. Abdipour, A. Nentchev, M. Dehghan, S. Selberherr: "Alternating-Direction Implicit Formulation of the Finite-Element Time-Domain Method"; IEEE Transactions on Microwave Theory and Techniques, 55, (2007), 1322 - 1331 doi:10.1109/TMTT.2007.897777. BibTeX |
| 299. | L. Li, G. Meller, H. Kosina: "Analytical Conductivity Model for Doped Organic Semiconductors"; Journal of Applied Physics, 101, (2007), 1 - 4 doi:10.1063/1.2472282. BibTeX |
| 298. | L. Li, G. Meller, H. Kosina: "Carrier Concentration Dependence of the Mobility in Organic Semiconductors"; Synthetic Metals, 157, (2007), 243 - 246 doi:10.1016/j.synthmet.2007.03.002. BibTeX |
| 297. | S. Holzer, A. Sheikholeslami, M. Karner, T. Grasser, S. Selberherr: "Comparison of Deposition Models for a TEOS LPCVD Process"; Microelectronics Reliability, 47, (2007), 623 - 625 doi:10.1016/j.microrel.2007.01.058. BibTeX |
| 296. | P. Palestri, N. Barin, D. Brunel, C. Busseret, A. Campera, P. Childs, F. Driussi, C. Fiegna, G. Fiori, R. Gusmeroli, G. Iannaccone, M. Karner, H. Kosina, E. Langer, C. Majkusiak, C. Monzio Compagnoni, A. Poncet, E. Sangiorgi, L. Selmi, A. Spinelli, J. Walczak: "Comparison of Modeling Approaches for the Capacitance-Voltage and Current-Voltage Characteristics of Advanced Gate Stacks"; IEEE Transactions on Electron Devices, 54, (2007), 106 - 114 doi:10.1109/TED.2006.887226. BibTeX |
| 295. | L. Li, G. Meller, H. Kosina: "Diffusion-Controlled Charge Injection Model for Organic Light-Emitting Diodes"; Applied Physics Letters, 91, (2007), 1 - 3 doi:10.1063/1.2801702. BibTeX |
| 294. | M. Spevak, T. Grasser: "Discretization of Macroscopic Transport Equations on Non-Cartesian Coordinate Systems"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 26, (2007), 1408 - 1416. BibTeX |
| 293. | M. Pourfath, H. Kosina, S. Selberherr: "Dissipative Transport in CNTFETs"; Journal of Computational Electronics, 6, (2007), 321 - 324 doi:10.1007/s10825-006-0113-7. BibTeX |
| 292. | S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr: "Electron Mobility Model for <110> Stressed Silicon Including Strain-Dependent Mass"; IEEE Transactions on Nanotechnology, 6, (2007), 97 - 100 doi:10.1109/TNANO.2006.888533. BibTeX |
| 291. | C. Heitzinger, Ch. Ringhofer, S. Selberherr: "Finite Difference Solutions of the Nonlinear Schrödinger Equation and their Conservation of Physical Quantities"; Communications in Mathematical Sciences, 5, (2007), 779 - 788 doi:10.4310/CMS.2007.v5.n4.a2. BibTeX |
| 290. | M. Pourfath, H. Kosina, S. Selberherr: "Geometry Optimization for Carbon Nanotube Transistors"; Solid-State Electronics, 51, (2007), 1565 - 1571 doi:10.1016/j.sse.2007.09.021. BibTeX |
| 289. | T. Krishnamohan, C. Jungemann, D. Kim, E. Ungersböck, S. Selberherr, A.-T Pham, B. Meinerzhagen, P. Wong, Y. Nishida, K. Saraswat: "High Performance, Uniaxially-Strained, Silicon and Germanium, Double-Gate p-MOSFETs"; Microelectronic Engineering, 84, (2007), 2063 - 2066 doi:10.1016/j.mee.2007.04.085. BibTeX |
| 288. | L. Li, G. Meller, H. Kosina: "Influence of Traps on Charge Transport in Organic Semiconductors"; Solid-State Electronics, 51, (2007), 445 - 448 doi:10.1016/j.sse.2007.01.024. BibTeX |
| 287. | G. Span, M. Wagner, T. Grasser, L. Holmgren: "Miniaturized TEG with Thermal Generation of Free Carriers"; Physica Status Solidi - Rapid Research Letters, 1, (2007), 241 - 243 doi:10.1002/pssr.200701171. BibTeX |
| 286. | M. Nedjalkov, D. Vasileska, I. Dimov, G. Arsov: "Mixed Initial-Boundary Value Problem in Particle Modeling of Microelectronic Devices"; Monte Carlo Methods and Applications, 13, (2007), 299 - 331 doi:10.1515/MCMA.2007.017. BibTeX |
| 285. | T. Grasser, S. Selberherr: "Modeling of Negative Bias Temperature Instability"; Journal of Telecommunications and Information Technology, 7, (invited) (2007), 92 - 102. BibTeX |
| 284. | H. Kosina: "Nanoelectronic Device Simulation Based on the Wigner Function Formalism"; International Journal of High Speed Electronics and Systems, 17, (2007), 475 - 484 doi:10.1142/S0129156407004667. BibTeX |
| 283. | R. Entner, T. Grasser, O. Triebl, H. Enichlmair, R. Minixhofer: "Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures"; Microelectronics Reliability, 47, (2007), 697 - 699. BibTeX |
| 282. | M. Movahhedi, A. Abdipour, H. Ceric, A. Sheikholeslami, S. Selberherr: "Optimization of the Perfectly Matched Layer for the Finite-Element Time-Domain Method"; IEEE Microwave and Wireless Components Letters, 17, (2007), 10 - 12 doi:10.1109/LMWC.2006.887240. BibTeX |
| 281. | E. Ungersböck, S. Dhar, G. Karlowatz, H. Kosina, S. Selberherr: "Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon"; Journal of Computational Electronics, 6, (2007), 55 - 58 doi:10.1007/s10825-006-0047-0. BibTeX |
| 280. | A. Sheikholeslami, F. Parhami, H. Puchner, S. Selberherr: "Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers"; Journal of Physics: Conference Series, 61, (2007), 1051 - 1055 doi:10.1088/1742-6596/61/1/208. BibTeX |
| 279. | M. Wagner, M. Karner, J. Cervenka, M. Vasicek, H. Kosina, S. Holzer, T. Grasser: "Quantum Correction for DG MOSFETs"; Journal of Computational Electronics, 5, (2007), 397 - 400 doi:10.1007/s10825-006-0032-7. BibTeX |
| 278. | E. Ungersböck, S. Dhar, G. Karlowatz, V. Sverdlov, H. Kosina, S. Selberherr: "The Effect of General Strain on the Band Structure and Electron Mobility of Silicon"; IEEE Transactions on Electron Devices, 54, (2007), 2183 - 2190 doi:10.1109/TED.2007.902880. BibTeX |
| 277. | M. Pourfath, H. Kosina: "The Effect of Phonon Scattering on the Switching Response of Carbon Nanotube Field-Effect Transistors"; Nanotechnology, 18, (2007), 424036 - 424041 doi:10.1088/0957-4484/18/42/424036. BibTeX |
| 276. | V. Sverdlov, E. Ungersböck, H. Kosina: "Theoretical Electron Mobility Analysis in Thin-Body FETs: Dependence on Substrate Orientation and Biaxial Strain"; IEEE Transactions on Nanotechnology, 6, (2007), 334 - 340 doi:10.1109/TNANO.2007.894835. BibTeX |
| 275. | M. Wagner, G. Span, S. Holzer, T. Grasser: "Thermoelectric Power Generation Using Large-Area Si/SiGe pn-Junctions with Varying Ge Content"; Semiconductor Science and Technology, 22, (2007), 173 - 176. BibTeX |
| 274. | J. Cervenka, H. Ceric, S. Selberherr: "Three-Dimensional Simulation of Sacrificial Etching"; Proceedings of SPIE, 6589, (2007), 452 - 460 doi:10.1117/12.721979. BibTeX |
| 273. | M. Pourfath, H. Kosina, S. Selberherr: "Tunneling CNTFETs"; Journal of Computational Electronics, 6, (2007), 243 - 246 doi:10.1007/s10825-006-0099-1. BibTeX |
| 272. | M. Nedjalkov, D. Vasileska, E. Atanassov, V. Palankovski: "Ultrafast Wigner Transport in Quantum Wires"; Journal of Computational Electronics, 6, (2007), 235 - 238 doi:10.1007/s10825-006-0101-y. BibTeX |
| 271. | M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr: "VSP - A Gate Stack Analyzer"; Microelectronics Reliability, 47, (2007), 704 - 708 doi:10.1016/j.microrel.2007.01.059. BibTeX |
| 270. | O. Triebl, T. Grasser: "Vector Discretization Schemes in Technology CAD Environments"; Romanian Journal of Information Science and Technology, 10, (2007), 167 - 176. BibTeX |
| 269. | V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr: "Volume Inversion Mobility in SOI MOSFETs for Different Thin Body Orientations"; Solid-State Electronics, 51, (2007), 299 - 305 doi:10.1016/j.sse.2007.01.022. BibTeX |
| 268. | M. Pourfath, H. Kosina, S. Selberherr: "A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors"; Journal of Computational Electronics, 5, (2006), 155 - 159 doi:10.1007/s10825-006-8836-z. BibTeX |
| 267. | Y. Kinkhabwala, V. Sverdlov, K. Likharev: "A Numerical Study of Coulomb Interaction Effects on 2D Hopping Transport"; Journal of Physics: Condensed Matter, 18, (2006), 2013 - 2027. BibTeX |
| 266. | Y. Kinkhabwala, V. Sverdlov, A.N. Korotkov, K. Likharev: "A Numerical Study of Transport and Shot Noise in 2D Hopping"; Journal of Physics: Condensed Matter, 18, (2006), 1999 - 2012. BibTeX |
| 265. | W. Wessner, J. Cervenka, C. Heitzinger, A. Hössinger, S. Selberherr: "Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25, (2006), 2129 - 2139 doi:10.1109/TCAD.2005.862750. BibTeX |
| 264. | H. Kosina, S. Selberherr: "Device Simulation Demands of Upcoming Microelectronic Devices"; International Journal of High Speed Electronics and Systems, 16, (2006), 115 - 136 doi:10.1142/S0129156406003576. BibTeX |
| 263. | M. Karner, A. Gehring, H. Kosina: "Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics"; Journal of Computational Electronics, 5, (2006), 161 - 165 doi:10.1007/s10825-006-8837-y. BibTeX |
| 262. | J. Cervenka, W. Wessner, E. Al-Ani, T. Grasser, S. Selberherr: "Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25, (2006), 2118 - 2128 doi:10.1109/TCAD.2006.876514. BibTeX |
| 261. | S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr: "High-Field Electron Mobility Model for Strained-Silicon Devices"; IEEE Transactions on Electron Devices, 53, (2006), 3054 - 3062 doi:10.1109/TED.2006.885639. BibTeX |
| 260. | V. Sverdlov, H. Kosina, S. Selberherr: "Modeling Current Transport in Ultra-Scaled Field-Effect Transistors"; Microelectronics Reliability, 47, (invited) (2006), 11 - 19 doi:10.1016/j.microrel.2006.03.009. BibTeX |
| 259. | E. Ungersböck, H. Kosina: "Monte Carlo Study of Electron Transport in Strained Silicon Inversion Layers"; Journal of Computational Electronics, 5, (2006), 79 - 83 doi:10.1007/s10825-006-8823-4. BibTeX |
| 258. | M. Pourfath, H. Kosina, S. Selberherr: "Rigorous Modeling of Carbon Nanotube Transistors"; Journal of Physics: Conference Series, 38, (2006), 29 - 32 doi:10.1088/1742-6596/38/1/008. BibTeX |
| 257. | V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr: "Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices"; Journal of Computational Electronics, 5, (2006), 447 - 450 doi:10.1007/s10825-006-0041-6. BibTeX |
| 256. | G. Meller, L. Li, S. Holzer, H. Kosina: "Simulation of Carrier Injection and Propagation in Molecularly Disordered Systems"; Optical and Quantum Electronics, 38, (2006), 993 - 1004 doi:10.1007/s11082-006-9051-7. BibTeX |
| 255. | L. Li, G. Meller, H. Kosina: "Temperature and Field-Dependence of Hopping Conduction in Organic Semiconductors"; Microelectronics Journal, 38, (2006), 47 - 51 doi:10.1016/j.mejo.2006.09.022. BibTeX |
| 254. | M. Nedjalkov, D. Vasileska, D.K. Ferry, C. Jacoboni, Ch. Ringhofer, I. Dimov, V. Palankovski: "Wigner Transport Models of the Electron-Phonon Kinetics in Quantum Wires"; Physical Review B, 74, (2006), 035311-1 - 035311-18 doi:10.1103/PhysRevB.74.035311. BibTeX |
| 253. | H. Kosina: "Wigner function approach to nano device simulation"; International Journal of Computational Science and Engineering, 2, (2006), 100 - 118 doi:10.1504/IJCSE.2006.012762. BibTeX |
| 252. | C. Heitzinger, A. Sheikholeslami, J.M. Park, S. Selberherr: "A Method for Generating Structurally Aligned Grids for Semiconductor Device Simulation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 24, (2005), 1485 - 1491 doi:10.1109/TCAD.2005.852297. BibTeX |
| 251. | S. Wagner, T. Grasser, C. Fischer, S. Selberherr: "An Advanced Equation Assembly Module"; Engineering with Computers, 21, (2005), 151 - 163 doi:10.1007/s00366-005-0319-5. BibTeX |
| 250. | S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr: "Electron Mobility Model for Strained-Si Devices"; IEEE Transactions on Electron Devices, 52, (2005), 527 - 533 doi:10.1109/TED.2005.844788. BibTeX |
| 249. | C. Jungemann, T. Grasser, B. Neinhüs, B. Meinerzhagen: "Failure of Moments-Based Transport Models in Nanoscale Devices Near Equilibrium"; IEEE Transactions on Electron Devices, 52, (2005), 2404 - 2408. BibTeX |
| 248. | A. Gehring, S. Selberherr: "Gate Current Modeling for MOSFETs"; Journal of Computational and Theoretical Nanoscience, 2, (invited) (2005), 26 - 44 doi:10.1166/jctn.2005.002. BibTeX |
| 247. | L.C. Castro, D.L. John, D.L. Pulfrey, M. Pourfath, A. Gehring, H. Kosina: "Method for Predicting fT for Carbon Nanotube FETs"; IEEE Transactions on Nanotechnology, Vol. 4, (2005), 699 - 704 doi:10.1109/TNANO.2005.858603. BibTeX |
| 246. | T. Ayalew, T. Grasser, H. Kosina, S. Selberherr: "Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices"; Materials Science Forum, 483-485, (2005), 845 - 848 doi:10.4028/www.scientific.net/MSF.483-485.845. BibTeX |
| 245. | T. Grasser: "Non-Parabolic Macroscopic Transport Models for Semiconductor Device Simulation"; Physica A: Statistical Mechanics and its Applications, 349, (2005), 221 - 258. BibTeX |
| 244. | T. Grasser, R. Kosik, C. Jungemann, H. Kosina, S. Selberherr: "Nonparabolic Macroscopic Transport Models for Device Simulation Based on Bulk Monte Carlo Data"; Journal of Applied Physics, 97, (2005), 093710-1 - 093710-12 doi:10.1063/1.1883311. BibTeX |
| 243. | M. Pourfath, E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, W.J. Park, B.-H. Cheong: "Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors"; Journal of Computational Electronics, 4, (2005), 75 - 78 doi:10.1007/s10825-005-7111-z. BibTeX |
| 242. | T. Ayalew, S.-C. Kim, T. Grasser, S. Selberherr: "Numerical Analysis of SiC Merged PiN Schottky Diodes"; Materials Science Forum, 483-485, (2005), 949 - 952 doi:10.4028/www.scientific.net/MSF.483-485.949. BibTeX |
| 241. | S.-C. Kim, W. Bahng, N.-K. Kim, E.-D. Kim, T. Ayalew, T. Grasser, S. Selberherr: "Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication"; Materials Science Forum, 483-485, (2005), 793 - 796 doi:10.4028/www.scientific.net/MSF.483-485.793. BibTeX |
| 240. | M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W.J. Park, H. Kosina, S. Selberherr: "Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors"; Microelectronic Engineering, 81, (2005), 428 - 433 doi:10.1016/j.mee.2005.03.043. BibTeX |
| 239. | E. Ungersböck, M. Pourfath, H. Kosina, A. Gehring, B.-H. Cheong, W.J. Park, S. Selberherr: "Optimization of Single-Gate Carbon-Nanotube Field-Effect Transistors"; IEEE Transactions on Nanotechnology, 4, (2005), 533 - 538 doi:10.1109/TNANO.2005.851402. BibTeX |
| 238. | V. Sverdlov, A. Gehring, H. Kosina, S. Selberherr: "Quantum Transport in Ultra-Scaled Double-Gate MOSFETs: A Wigner Function-Based Monte Carlo Approach"; Solid-State Electronics, 49, (2005), 1510 - 1515 doi:10.1016/j.sse.2005.07.013. BibTeX |
| 237. | M. Pourfath, A. Gehring, E. Ungersböck, H. Kosina, S. Selberherr, B.-H. Cheong, W. Park: "Separated Carrier Injection Control in Carbon Nanotube Field-Effect Transistors"; Journal of Applied Physics, 97, (2005), 106103-1 - 106103-3 doi:10.1063/1.1897491. BibTeX |
| 236. | S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser, S. Selberherr: "Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress"; Proceedings of SPIE, 5837, (2005), 380 - 387 doi:10.1117/12.608414. BibTeX |
| 235. | A. Gehring, H. Kosina: "Wigner Function-Based Simulation of Quantum Transport in Scaled DG-MOSFETs Using a Monte Carlo Method"; Journal of Computational Electronics, 4, (2005), 67 - 70. BibTeX |
| 234. | T. Grasser, R. Kosik, C. Jungemann, B. Meinerzhagen, H. Kosina, S. Selberherr: "A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices"; Journal of Computational Electronics, 3, (2004), 183 - 187 doi:10.1007/s10825-004-7041-1. BibTeX |
| 233. | C. Heitzinger, Ch. Ringhofer: "A Note on the Symplectic Integration of the Nonlinear Schrödinger Equation"; Journal of Computational Electronics, 3, (2004), 33 - 44. BibTeX |
| 232. | M. Nedjalkov, H. Kosina, E. Ungersböck, S. Selberherr: "A Quasi-Particle Model of the Electron-Wigner Potential Interaction"; Semiconductor Science and Technology, 19, (2004), 226 - 228 doi:10.1088/0268-1242/19/4/076. BibTeX |
| 231. | M. Nedjalkov, S. Ahmed, D. Vasileska: "A Self-Consistent Event Biasing Scheme for Statistical Enhancement"; Journal of Computational Electronics, 3, (2004), 305 - 309. BibTeX |
| 230. | T. Binder, C. Heitzinger, S. Selberherr: "A Study on Global and Local Optimization Techniques for TCAD Analysis Tasks"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 23, (2004), 814 - 822 doi:10.1109/TCAD.2004.828130. BibTeX |
| 229. | C. Heitzinger, A. Hössinger, S. Selberherr: "An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results"; Mathematics and Computers in Simulation, 66, (2004), 219 - 230 doi:10.1016/j.matcom.2003.11.010. BibTeX |
| 228. | R. Rodriguez-Torres, E. Gutierrez, R. Klima, S. Selberherr: "Analysis of Split-Drain MAGFETs"; IEEE Transactions on Electron Devices, 51, (2004), 2237 - 2245 doi:10.1109/TED.2004.839869. BibTeX |
| 227. | V. Palankovski, S. Selberherr: "Critical Modeling Issues of SiGe Semiconductor Devices"; Journal of Telecommunications and Information Technology, 4, (invited) (2004), 15 - 25. BibTeX |
| 226. | S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr: "Direct Extraction Feature for Scattering Parameters of SiGe-HBTs"; Applied Surface Science, 224, (2004), 365 - 369 doi:10.1016/j.apsusc.2003.09.035. BibTeX |
| 225. | T. Ayalew, A. Gehring, T. Grasser, S. Selberherr: "Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination"; Microelectronics Reliability, 44, (2004), 1473 - 1478 doi:10.1016/j.microrel.2004.07.042. BibTeX |
| 224. | A. Gehring, S. Selberherr: "Evolution of Current Transport Models for Engineering Applications"; Journal of Computational Electronics, 3, (2004), 149 - 155 doi:10.1007/s10825-004-7035-z. BibTeX |
| 223. | S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr: "Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Fusing Structures"; Microelectronics Journal, 35, (2004), 805 - 810 doi:10.1016/j.mejo.2004.06.011. BibTeX |
| 222. | C. Heitzinger, A. Sheikholeslami, F. Badrieh, H. Puchner, S. Selberherr: "Feature-Scale Process Simulation and Accurate Capacitance Extraction for the Backend of a 100-nm Aluminum/TEOS Process"; IEEE Transactions on Electron Devices, 51, (2004), 1129 - 1134 doi:10.1109/TED.2004.829868. BibTeX |
| 221. | J.M. Park, R. Klima, S. Selberherr: "High-Voltage Lateral Trench Gate SOI-LDMOSFETs"; Microelectronics Journal, 35, (2004), 299 - 304 doi:10.1016/S0026-2692(03)00192-7. BibTeX |
| 220. | A. Gehring, S. Selberherr: "Modeling of Tunneling Current and Gate Dielectric Reliability for Nonvolatile Memory Devices"; IEEE Transactions on Device and Materials Reliability, 4, (2004), 306 - 319 doi:10.1109/TDMR.2004.836727. BibTeX |
| 219. | S. Smirnov, H. Kosina: "Monte Carlo Modeling of the Electron Mobility in Strained Si1-xGex Layers on Arbitrarily Oriented Si1-yGey Substrates"; Solid-State Electronics, 48, (invited) (2004), 1325 - 1335 doi:10.1016/j.sse.2004.01.014. BibTeX |
| 218. | J.M. Park, S. Wagner, T. Grasser, S. Selberherr: "New SOI Lateral Power Devices with Trench Oxide"; Solid-State Electronics, 48, (2004), 1007 - 1015 doi:10.1016/j.sse.2003.12.015. BibTeX |
| 217. | C. Heitzinger, S. Selberherr: "On the Simulation of the Formation and Dissolution of Silicon Self-Interstitial Clusters and the Corresponding Inverse Modeling Problem"; Microelectronics Journal, 35, (2004), 167 - 171 doi:10.1016/j.mejo.2003.09.014. BibTeX |
| 216. | M. Nedjalkov, E. Atanassov, H. Kosina, S. Selberherr: "Operator-Split Method for Variance Reduction in Stochastic Solutions for the Wigner Equation"; Monte Carlo Methods and Applications, 10, (2004), 461 - 468 doi:10.1515/mcma.2004.10.3-4.461. BibTeX |
| 215. | V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr: "Rigorous Modeling Approach to Numerical Simulation of SiGe HBTs"; Applied Surface Science, 224, (2004), 361 - 364 doi:10.1016/j.apsusc.2003.09.034. BibTeX |
| 214. | V. Palankovski, S. Selberherr: "Rigorous Modeling of High-Speed Semiconductor Devices"; Microelectronics Reliability, 44, (invited) (2004), 889 - 897 doi:10.1016/j.microrel.2004.02.009. BibTeX |
| 213. | Ch. Ringhofer, M. Nedjalkov, H. Kosina, S. Selberherr: "Semiclassical Approximation of Electron-Phonon Scattering Beyond Fermi's Golden Rule"; SIAM Journal on Applied Mathematics, 64, (2004), 1933 - 1953 doi:10.1137/S0036139903428914. BibTeX |
| 212. | H. Kosina, M Nedjalkov, S. Selberherr: "Solution of the Space-dependent Wigner Equation Using a Particle Model"; Monte Carlo Methods and Applications, 10, (2004), 359 - 368 doi:10.1515/mcma.2004.10.3-4.359. BibTeX |
| 211. | A. Gehring, S. Selberherr: "Statistical Simulation of Gate Dielectric Wearout, Leakage, and Breakdown"; Microelectronics Reliability, 44, (2004), 1879 - 1884 doi:10.1016/j.microrel.2004.07.101. BibTeX |
| 210. | V. Palankovski, S. Selberherr: "The State-of-the-Art in Simulation for Optimization of SiGe-HBTs"; Applied Surface Science, 224, (2004), 312 - 319 doi:10.1016/j.apsusc.2003.09.036. BibTeX |
| 209. | M. Nedjalkov, H. Kosina, S. Selberherr, Ch. Ringhofer, D.K. Ferry: "Unified Particle Approach to Wigner-Boltzmann Transport in Small Semiconductor Devices"; Physical Review B, 70, (2004), 1 - 16 doi:10.1103/PhysRevB.70.115319. BibTeX |
| 208. | H. Kosina, M. Nedjalkov, S. Selberherr: "A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations"; Journal of Computational Electronics, 2, (2003), 147 - 151 doi:10.1023/B:JCEL.0000011416.93047.69. BibTeX |
| 207. | J.M. Park, T. Grasser, H. Kosina, S. Selberherr: "A Numerical Study of Partial-SOI LDMOSFETs"; Solid-State Electronics, 47, (2003), 275 - 281 doi:10.1016/S0038-1101(02)00207-1. BibTeX |
| 206. | T. Grasser, T.-W. Tang, H. Kosina, S. Selberherr: "A Review of Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation"; Proceedings of the IEEE, 91, (2003), 251 - 274 doi:10.1109/JPROC.2002.808150. BibTeX |
| 205. | H. Ceric, S. Selberherr: "An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration"; IEICE Transactions on Electronics, E86-C, (invited) (2003), 421 - 426. BibTeX |
| 204. | H. Kosina, M. Nedjalkov, S. Selberherr: "An Event Bias Technique for Monte Carlo Device Simulation"; Mathematics and Computers in Simulation, 62, (2003), 367 - 375 doi:10.1016/S0378-4754(02)00245-8. BibTeX |
| 203. | A. Gehring, H. Kosina, S. Selberherr: "Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method"; Journal of Computational Electronics, 2, (2003), 219 - 223 doi:10.1023/B:JCEL.0000011428.85286.7d. BibTeX |
| 202. | C. Harlander, R. Sabelka, S. Selberherr: "Efficient Inductance Calculation in Interconnect Structures by Applying the Monte Carlo Method"; Microelectronics Journal, 34, (2003), 815 - 821 doi:10.1016/S0026-2692(03)00147-2. BibTeX |
| 201. | A. Gehring, T. Grasser, H. Kosina, S. Selberherr: "Energy Transport Gate Current Model Accounting for Non-Maxwellian Energy Distribution"; Electronics Letters, 39, (2003), 691 - 692 doi:10.1049/el:20030440. BibTeX |
| 200. | T. Grasser, H. Kosina, S. Selberherr: "Hot Carrier Effects within Macroscopic Transport Models"; International Journal of High Speed Electronics and Systems, 13, (2003), 873 - 901 doi:10.1142/S012915640300206X. BibTeX |
| 199. | T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr: "Improving SiC Lateral DMOSFET Reliability under High Field Stress"; Microelectronics Reliability, 43, (2003), 1889 - 1894 doi:10.1016/S0026-2714(03)00321-4. BibTeX |
| 198. | S. Smirnov, H. Kosina, S. Selberherr: "Investigation of the Electron Mobility in Strained Si1-x Gex at High Ge Composition"; IEICE Transactions on Electronics, E86-C, (2003), 350 - 356. BibTeX |
| 197. | A. Gehring, F. Jimenez-Molinos, H. Kosina, A. Palma, F. Gamiz, S. Selberherr: "Modeling of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM Devices"; Microelectronics Reliability, 43, (2003), 1495 - 1500 doi:10.1016/S0026-2714(03)00265-8. BibTeX |
| 196. | M. Nedjalkov, H. Kosina, S. Selberherr: "Monte Carlo Algorithms for Stationary Device Simulation"; Mathematics and Computers in Simulation, 62, (2003), 453 - 461 doi:10.1016/S0378-4754(02)00246-X. BibTeX |
| 195. | S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr: "Monte Carlo Method for Modeling of Small Signal Response Including the Pauli Exclusion Principle"; Journal of Applied Physics, 94, (2003), 5791 - 5799 doi:10.1063/1.1616982. BibTeX |
| 194. | V. M. Borzdov, V. O. Galenchik, H. Kosina, F. F. Komarov, O. G. Zhevnyak: "Monte Carlo Study of the Relative Frequency of Scattering Processes in Si-Inversion Layers"; Physics of Low-dimensional Structures, 5-6, (2003), 99 - 108. BibTeX |
| 193. | C. Heitzinger, A. Hössinger, S. Selberherr: "On Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22, (2003), 879 - 883 doi:10.1109/TCAD.2003.814259. BibTeX |
| 192. | H. Kosina, M. Nedjalkov: "Particle Models for Device Simulation"; International Journal of High Speed Electronics and Systems, 13, (invited) (2003), 727 - 769. BibTeX |
| 191. | T. Binder, A. Hössinger, S. Selberherr: "Rigorous Integration of Semiconductor Process and Device Simulators"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22, (2003), 1204 - 1214 doi:10.1109/TCAD.2003.816219. BibTeX |
| 190. | C. Heitzinger, W. Pyka, N. Tamaoki, T. Takase, T. Ohmine, S. Selberherr: "Simulation of Arsenic In Situ Doping With Polysilicon CVD and Its Application to High Aspect Ratio Trenches"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22, (2003), 285 - 292 doi:10.1109/TCAD.2002.807879. BibTeX |
| 189. | A. Sheikholeslami, C. Heitzinger, H. Puchner, F. Badrieh, S. Selberherr: "Simulation of Void Formation in Interconnect Lines"; Proceedings of SPIE, 5117, (2003), 445 - 452 doi:10.1117/12.498783. BibTeX |
| 188. | M. Nedjalkov, H. Kosina, S. Selberherr: "Stochastic Interpretation of the Wigner Transport in Nanostructures"; Microelectronics Journal, 34, (2003), 443 - 445 doi:10.1016/S0026-2692(03)00069-7. BibTeX |
| 187. | H. Kosina, M. Nedjalkov, S. Selberherr: "The Stationary Monte Carlo Method for Device Simulation. I. Theory"; Journal of Applied Physics, 93, (2003), 3553 - 3563 doi:10.1063/1.1544654. BibTeX |
| 186. | M. Nedjalkov, H. Kosina, S. Selberherr: "The Stationary Monte Carlo Method for Device Simulation. II. Event Biasing and Variance Estimation"; Journal of Applied Physics, 93, (2003), 3564 - 3571 doi:10.1063/1.1544655. BibTeX |
| 185. | J. Cervenka, R. Klima, M. Knaipp, S. Selberherr: "Three-Dimensional Device Optimization by Green's Functions"; European Physical Journal - Applied Physics, 21, (2003), 103 - 106 doi:10.1051/epjap:2002121. BibTeX |
| 184. | M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr: "A Space Dependent Wigner Equation Including Phonon Interaction"; Journal of Computational Electronics, 1, (2002), 27 - 31 doi:10.1023/A:1020799224110. BibTeX |
| 183. | M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr: "A Wigner Equation with Quantum Electron-Phonon Interaction"; Microelectronic Engineering, 63, (2002), 199 - 203 doi:10.1016/S0167-9317(02)00625-1. BibTeX |
| 182. | T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr: "Accurate Impact Ionization Model which Accounts for Hot and Cold Carrier Populations"; Applied Physics Letters, 80, (2002), 613 - 615 doi:10.1063/1.1445273. BibTeX |
| 181. | C. Heitzinger, S. Selberherr: "An Extensible TCAD Optimization Framework Combining Gradient Based and Genetic Optimizers"; Microelectronics Journal, 33, (2002), 61 - 68 doi:10.1016/S0026-2692(01)00105-7. BibTeX |
| 180. | H. Kosina, M. Gritsch, T. Grasser, S. Selberherr, T. Linton, S. Yu, M. Giles: "An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs"; Journal of Computational Electronics, 1, (2002), 371 - 374 doi:10.1023/A:1020703709031. BibTeX |
| 179. | T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr: "Characterization of the Hot Electron Distribution Function Using Six Moments"; Journal of Applied Physics, 91, (2002), 3869 - 3879 doi:10.1063/1.1450257. BibTeX |
| 178. | A. Gehring, T. Grasser, B.-H. Cheong, S. Selberherr: "Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer-Matrix Method"; Solid-State Electronics, 46, (2002), 1545 - 1551 doi:10.1016/S0038-1101(02)00103-X. BibTeX |
| 177. | T. Grasser, S. Selberherr: "Electro-Thermal Effects in Mixed-Mode Device Simulation"; Romanian Journal of Information Science and Technology, 5, (2002), 339 - 354. BibTeX |
| 176. | T.V. Gurov, M. Nedjalkov, P.A. Whitlock, H. Kosina, S. Selberherr: "Femtosecond Relaxation of Hot Electrons by Phonon Emission in Presence of Electric Field"; Physica B: Condensed Matter, 314, (2002), 301 - 304 doi:10.1016/S0921-4526(01)01417-X. BibTeX |
| 175. | T. Grasser, H. Kosina, S. Selberherr: "Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Extensions and Critical Issues"; Wisnik, 444, (invited) (2002), 28 - 41. BibTeX |
| 174. | T. Grasser, H. Kosina, S. Selberherr: "Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Review of Basic Models"; Wisnik, 444, (invited) (2002), 18 - 27. BibTeX |
| 173. | M. Gritsch, H. Kosina, T. Grasser, S. Selberherr: "Revision of the Standard Hydrodynamic Transport Model for SOI Simulation"; IEEE Transactions on Electron Devices, 49, (2002), 1814 - 1820 doi:10.1109/TED.2002.803645. BibTeX |
| 172. | A. Gehring, T. Grasser, H. Kosina, S. Selberherr: "Simulation of Hot-Electron Oxide Tunneling Current Based on a Non-Maxwellian Electron Energy Distribution Function"; Journal of Applied Physics, 92, (2002), 6019 - 6027 doi:10.1063/1.1516617. BibTeX |
| 171. | H. Ceric, S. Selberherr: "Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution"; Microelectronics Reliability, 42, (2002), 1457 - 1460 doi:10.1016/S0026-2714(02)00169-5. BibTeX |
| 170. | T. Grasser, S. Selberherr: "Technology CAD: Device Simulation and Characterization"; Journal of Vacuum Science & Technology B, 20, (2002), 407 - 413 doi:10.1116/1.1445162. BibTeX |
| 169. | M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr: "Transient Model for Terminal Current Noise"; Applied Physics Letters, 80, (2002), 607 - 609 doi:10.1063/1.1447002. BibTeX |
| 168. | M. Nedjalkov, H. Kosina, S. Selberherr, I. Dimov: "A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors"; VLSI Design, 13, (2001), 405 - 411 doi:10.1155/2001/54247. BibTeX |
| 167. | R. Sabelka, S. Selberherr: "A Finite Element Simulator for Three-Dimensional Analysis of Interconnect Structures"; Microelectronics Journal, 32, (2001), 163 - 171 doi:10.1016/S0026-2692(00)00113-0. BibTeX |
| 166. | V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr: "A Methodology for Deep Sub-0.25µm CMOS Technology Prediction"; IEEE Transactions on Electron Devices, 48, (2001), 2331 - 2336 doi:10.1109/16.954473. BibTeX |
| 165. | T Fahringer, P. Blaha, A. Hössinger, J. Luitz, E. Mehofer, H. Moritsch, B. Scholz: "Development and Performance Analysis of Real-World Applications for Distributed and Parallel Architectures "; Concurrency and Computation: Practice and Experience, 13, (2001), 1 - 17. BibTeX |
| 164. | V. Palankovski, R. Schultheis, A. Bonacina, S. Selberherr: "Effectiveness of Silicon Nitride Passivation in III-V Based Heterojunction Bipolar Transistors"; Radiation Effects and Defects in Solids, 156, (2001), 261 - 265 doi:10.1080/10420150108216903. BibTeX |
| 163. | T. Grasser, S. Selberherr: "Fully Coupled Electrothermal Mixed-Mode Device Simulation of SiGe HBT Circuits"; IEEE Transactions on Electron Devices, 48, (2001), 1421 - 1427 doi:10.1109/16.930661. BibTeX |
| 162. | F. Gamiz, J. Roldan, H. Kosina, T. Grasser: "Improving Strained-Si on Si1-xGex Deep Submicron MOSFETs Performance by Means of a Stepped Doping Profile"; IEEE Transactions on Electron Devices, 48, (2001), 1878 - 1884. BibTeX |
| 161. | V. Palankovski, R. Quay, S. Selberherr: "Industrial Application of Heterostructure Device Simulation"; IEEE Journal of Solid-State Circuits, 36, (invited) (2001), 1365 - 1370 doi:10.1109/4.944664. BibTeX |
| 160. | M. Gritsch, H. Kosina, T. Grasser, S. Selberherr: "Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs"; Solid-State Electronics, 45, (2001), 621 - 627 doi:10.1016/S0038-1101(01)00080-6. BibTeX |
| 159. | T. Grasser, H. Kosina, S. Selberherr: "Influence of the Distribution Function Shape and the Band Structure on Impact Ionization Modeling"; Journal of Applied Physics, 90, (2001), 6165 - 6171 doi:10.1063/1.1415366. BibTeX |
| 158. | T. Grasser, H. Kosina, S. Selberherr: "Investigation of Spurious Velocity Overshoot Using Monte Carlo Data"; Applied Physics Letters, 79, (2001), 1900 - 1902 doi:10.1063/1.1405000. BibTeX |
| 157. | V. Palankovski, S. Selberherr: "Micro Materials Modeling in MINIMOS-NT"; Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems, 7, (2001), 183 - 187 doi:10.1007/s005420000076. BibTeX |
| 156. | R. Quay, K. Hess, R. Reuter, M. Schlechtweg, T. Grave, V. Palankovski, S. Selberherr: "Nonlinear Electronic Transport and Device Performance of HEMTs"; IEEE Transactions on Electron Devices, 48, (2001), 210 - 217 doi:10.1109/16.902718. BibTeX |
| 155. | K. Dragosits, S. Selberherr: "Simulation of Ferroelectric Thin Films"; Radiation Effects and Defects in Solids, 156, (2001), 157 - 161 doi:10.1080/10420150108216888. BibTeX |
| 154. | V. Palankovski, R. Schultheis, S. Selberherr: "Simulation of Power Heterojunction Bipolar Transistors on Gallium Arsenide"; IEEE Transactions on Electron Devices, 48, (2001), 1264 - 1269 doi:10.1109/16.925258. BibTeX |
| 153. | H. Kosina, M. Nedjalkov: "The Monte Carlo Method for Semi-Classical Charge Transport in Semiconductor Devices"; Mathematics and Computers in Simulation, 55, (2001), 93 - 102. BibTeX |
| 152. | K. Dragosits, S. Selberherr: "Two-Dimensional Simulation of Ferroelectric Memory Cells"; IEEE Transactions on Electron Devices, 48, (2001), 316 - 322 doi:10.1109/16.902733. BibTeX |
| 151. | T. Grasser, H. Kosina, M. Gritsch, S. Selberherr: "Using Six Moments of Boltzmann's Transport Equation for Device Simulation"; Journal of Applied Physics, 90, (2001), 2389 - 2396 doi:10.1063/1.1389757. BibTeX |
| 150. | M. Nedjalkov, H. Kosina: "Variance of the Ensemble Monte Carlo Algorithm for Semiconductor Transport Modeling"; Mathematics and Computers in Simulation, 55, (2001), 191 - 198. BibTeX |
| 149. | A. Burenkov, K. Tietzel, A. Hössinger, J. Lorenz, H. Ryssel, S. Selberherr: "A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation"; IEICE Transactions on Electronics, E83-C, (2000), 1259 - 1266. BibTeX |
| 148. | H. Kosina, M. Nedjalkov, S. Selberherr: "A Monte Carlo Method for Small Signal Analysis of the Boltzmann Equation"; Journal of Applied Physics, 87, (2000), 4308 - 4314 doi:10.1063/1.373070. BibTeX |
| 147. | M. Nedjalkov, H. Kosina, S. Selberherr: "A Monte-Carlo Method to Analyze the Small Signal Response of the Semiconductor Carriers"; IEICE Transactions on Electronics, E83-C, (2000), 1218 - 1223. BibTeX |
| 146. | R. Quay, C. Moglestue, V. Palankovski, S. Selberherr: "A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials"; Materials Science in Semiconductor Processing, 3, (2000), 149 - 155 doi:10.1016/S1369-8001(00)00015-9. BibTeX |
| 145. | C. Heitzinger, S. Selberherr: "An Extensible TCAD Optimization Framework Combining Gradient Based and Genetic Optimizers"; Proceedings of SPIE, 4228, (2000), 279 - 289 doi:10.1117/12.405424. BibTeX |
| 144. | H. Brech, T. Grave, S. Selberherr: "Development of Global Calibration for Accurate GaAs-PHEMT Simulation"; IEEE Transactions on Electron Devices, 47, (2000), 1957 - 1964 doi:10.1109/16.870581. BibTeX |
| 143. | M. Knaipp, W. Kanert, S. Selberherr: "Hydrodynamic Modeling of Avalanche Breakdown in a Gate Overvoltage Protection Structure"; Solid-State Electronics, 44, (2000), 1135 - 1143 doi:10.1016/S0038-1101(00)00046-0. BibTeX |
| 142. | H. Puchner, R. Castagnetti, W. Pyka: "Minimizing Thick Resist Sidewall Slope Dependence on Design Geometry by Optimizing Bake Conditions"; Microelectronic Engineering, 53, (2000), 429 - 432. BibTeX |
| 141. | T. Grasser, S. Selberherr: "Mixed-Mode Device Simulation"; Microelectronics Journal, 31, (2000), 873 - 881 doi:10.1016/S0026-2692(00)00083-5. BibTeX |
| 140. | R. Kosik, P. Fleischmann, B. Haindl, P. Pietra, S. Selberherr: "On the Interplay Between Meshing and Discretization in Three-Dimensional Diffusion Simulation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 19, (2000), 1233 - 1240 doi:10.1109/43.892848. BibTeX |
| 139. | W. Pyka, R. Martins, S. Selberherr: "Optimized Algorithms for Three-Dimensional Cellular Topography Simulation"; IEEE Journal of Technology Computer Aided Design, 1, (2000), doi:10.1109/TCAD.1996.6449177. BibTeX |
| 138. | A. Hössinger, E. Langer, S. Selberherr: "Parallelization of a Monte Carlo Ion Implantation Simulator"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 19, (2000), 560 - 567 doi:10.1109/43.845080. BibTeX |
| 137. | R. Strasser, S. Selberherr: "Practical Inverse Modeling with SIESTA"; IEICE Transactions on Electronics, 83-C, (2000), 1303 - 1310. BibTeX |
| 136. | H. Kosina, M. Nedjalkov, S. Selberherr: "Theory of the Monte Carlo Method for Semiconductor Device Simulation"; IEEE Transactions on Electron Devices, 47, (2000), 1898 - 1908 doi:10.1109/16.870569. BibTeX |
| 135. | W. Pyka, H. Kirchauer, S. Selberherr: "Three-Dimensional Resist Development Simulation - Benchmarks and Integration with Lithography"; Microelectronic Engineering, 53, (2000), 449 - 452 doi:10.1016/S0167-9317(00)00353-1. BibTeX |
| 134. | H. Kosina: "A Method to Reduce Small-Angle Scattering in Monte Carlo Device Analysis"; IEEE Transactions on Electron Devices, 46, (1999), 1196 - 1200. BibTeX |
| 133. | M. Radi, E. Leitner, S. Selberherr: "AMIGOS: Analytical Model Interface & General Object-Oriented Solver"; IEEE Journal of Technology Computer Aided Design, 1, (1999), doi:10.1109/TCAD.1996.6449174. BibTeX |
| 132. | B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr: "An Energy Relaxation Time Model for Device Simulation"; Solid-State Electronics, 43, (1999), 1791 - 1795 doi:10.1016/S0038-1101(99)00132-X. BibTeX |
| 131. | K. Zankel, H. Kosina: "Capacitance Simulation of Irradiated Semiconductor Detectors"; Il Nuovo Cimento, 112, (1999), 43 - 47. BibTeX |
| 130. | M. Stockinger, A. Wild, S. Selberherr: "Drive Performance of an Asymmetric MOSFET Structure: The Peak Device"; Microelectronics Journal, 30, (1999), 229 - 233 doi:10.1016/S0026-2692(98)00111-6. BibTeX |
| 129. | P. Fleischmann, W. Pyka, S. Selberherr: "Mesh Generation for Application in Technology CAD"; IEICE Transactions on Electronics, E82-C, (invited) (1999), 937 - 947. BibTeX |
| 128. | C. Pichler, R. Plasun, R. Strasser, S. Selberherr: "Simulation of Complete VLSI Fabrication Processes with Heterogeneous Simulation Tools"; IEEE Transactions on Semiconductor Manufacturing, 12, (1999), 76 - 86 doi:10.1109/66.744527. BibTeX |
| 127. | V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr: "Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices"; Materials Science and Engineering B, 66, (1999), 46 - 49 doi:10.1016/S0921-5107(99)00118-X. BibTeX |
| 126. | W. Pyka, P. Fleischmann, B. Haindl, S. Selberherr: "Three-Dimensional Simulation of HPCVD - Linking Continuum Transport and Reaction Kinetics with Topography Simulation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 18, (1999), 1741 - 1749 doi:10.1109/43.811323. BibTeX |
| 125. | K. Dragosits, M. Knaipp, S. Selberherr: "Two-Dimensional Simulation of Ferroelectric Memory Cells"; Journal of the Korean Physical Society, 35, (1999), 104 - 106 doi:10.3938/jkps.35.S104. BibTeX |
| 124. | R. Martins, S. Selberherr, F. Vaz: "A CMOS IC for Portable EEG Acquisition Systems"; IEEE Transactions on Instrumentation and Measurement, 47, (1998), 1191 - 1196 doi:10.1109/19.746581. BibTeX |
| 123. | C. Wasshuber, H. Kosina, S. Selberherr: "A Comparative Study of Single-Electron Memories"; IEEE Transactions on Electron Devices, 45, (1998), 2365 - 2371 doi:10.1109/16.726659. BibTeX |
| 122. | H. Kosina, M. Harrer: "A Hot-Hole Transport Model Based on Spherical Harmonics Expansion of the Anisotropic Bandstructure"; VLSI Design, 6, (1998), 205 - 208 doi:10.1155/1998/83430. BibTeX |
| 121. | G. Kaiblinger-Grujin, H. Kosina: "An Improved Ionized Impurity Scattering Model For Monte Carlo Calculations"; VLSI Design, 6, (1998), 209 - 212 doi:10.1155/1998/87014. BibTeX |
| 120. | G. Schrom, A. Stach, S. Selberherr: "An Interpolation Based MOSFET Model for Low-Voltage Applications"; Microelectronics Journal, 29, (1998), 529 - 534 doi:10.1016/S0026-2692(98)00002-0. BibTeX |
| 119. | S. Selberherr: "Die großen Herausforderungen in der Mikroelektronik in den nächsten zehn Jahren"; E&I Elektrotechnik und Informationstechnik, 115, (invited) (1998), 344 - 348 doi:10.1007/BF03159602. BibTeX |
| 118. | C. Wasshuber: "Grenzen der Miniaturisierung - Die Zukunft der Mikroelektronik"; Informatik Spektrum, 21, (invited) (1998), 223 - 226. BibTeX |
| 117. | R. Martins, W. Pyka, R. Sabelka, S. Selberherr: "High-Precision Interconnect Analysis"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17, (1998), 1148 - 1159 doi:10.1109/43.736187. BibTeX |
| 116. | G. Kaiblinger-Grujin, H. Kosina, S. Selberherr: "Influence of the Doping Element on the Electron Mobility in n-Silicon"; Journal of Applied Physics, 83, (1998), 3096 - 3101 doi:10.1063/1.367067. BibTeX |
| 115. | R. Plasun, M. Stockinger, S. Selberherr: "Integrated Optimization Capabilities in the VISTA Technology CAD Framework"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17, (1998), 1244 - 1251 doi:10.1109/43.736564. BibTeX |
| 114. | H. Kosina, G. Kaiblinger-Grujin: "Ionized-Impurity Scattering of Majority Electrons in Silicon"; Solid-State Electronics, 42, (1998), 331 - 338 doi:10.1016/S0038-1101(97)00199-8. BibTeX |
| 113. | E. Leitner, S. Selberherr: "Mixed-Element Decomposition Method for Three-Dimensional Grid Adaptation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17, (1998), 561 - 572 doi:10.1109/43.709394. BibTeX |
| 112. | W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr: "Monte Carlo Simulation of Silicon Amorphization during Ion Implantation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17, (1998), 1236 - 1243 doi:10.1109/43.736563. BibTeX |
| 111. | M. Nedjalkov, I. Dimov, H. Haug: "Numerical Studies of the Markovian Limit of the Quantum Kinetics with Phonon Scattering"; Physica Status Solidi B - Basic Solid State Physics, 209, (1998), 109 - 121. BibTeX |
| 110. | H. Kosina, C. Troger: "SPIN - A Schrödinger-Poisson Solver Including Nonparabolic Bands"; VLSI Design, 8, (1998), 489 - 493 doi:10.1155/1998/39231. BibTeX |
| 109. | C. Wasshuber, H. Kosina: "Simulation of a Single Electron Tunnel Transistor with Inclusion of Inelastic Macroscopic Quantum Tunneling of Charge"; VLSI Design, 6, (1998), 35 - 38 doi:10.1155/1998/53694. BibTeX |
| 108. | C. Wasshuber, H. Kosina, S. Selberherr: "Single-Electron Memories"; VLSI Design, 8, (1998), 219 - 223 doi:10.1155/1998/83017. BibTeX |
| 107. | H. Kirchauer, S. Selberherr: "Three-Dimensional Photolithography Simulator Including Rigorous Nonplanar Exposure Simulation for Off-Axis Illumination"; Proceedings of SPIE, 3334, (1998), 764 - 776 doi:10.1117/12.310809. BibTeX |
| 106. | G. Schrom, De Vivek, S. Selberherr: "VLSI Performance Metric Based on Minimum TCAD Simulations"; IEEE Journal of Technology Computer Aided Design, 1, (1998), doi:10.1109/TCAD.1996.6449169. BibTeX |
| 105. | H. Noll, S. Selberherr: "Zur Entwicklung der Mikroelektronik"; Telematik, 4, (1998), 2 - 6. BibTeX |
| 104. | C. Wasshuber, H. Kosina: "A Single-Electron Device and Circuit Simulator"; Superlattices and Microstructures, 21, (1997), 37 - 42 doi:10.1006/spmi.1996.0138. BibTeX |
| 103. | C. Wasshuber, H. Kosina, S. Selberherr: "A Single-Electron Device and Circuit Simulator with a New Algorithm to Incorporate Co-tunneling"; IEEE Journal of Technology Computer Aided Design, 1, (1997), doi:10.1109/TCAD.1996.6449164. BibTeX |
| 102. | H. Kosina: "Efficient Evaluation of Ionized-Impurity Scattering in Monte Carlo Transport Calculations"; Physica Status Solidi A, 163, (1997), 475 - 489. BibTeX |
| 101. | P. Fleischmann, S. Selberherr: "Fully Unstructured Delaunay Mesh Generation Using a Modified Advancing Front Approach for Applications in Technology CAD"; IEEE Journal of Technology Computer Aided Design, 1, (1997), doi:10.1109/TCAD.1996.6449165. BibTeX |
| 100. | C. Pichler, R. Plasun, R. Strasser, S. Selberherr: "High-Level TCAD Task Representation and Automation"; IEEE Journal of Technology Computer Aided Design, 1, (1997), doi:10.1109/TCAD.1996.6449162. BibTeX |
| 99. | G. Kaiblinger-Grujin, H. Kosina, C. Köpf, S. Selberherr: "Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors"; Materials Science Forum, 258-263, (1997), 939 - 944 doi:10.4028/www.scientific.net/MSF.258-263.939. BibTeX |
| 98. | H. Brech, T. Grave, T. Simlinger, S. Selberherr: "Optimization of Pseudomorphic HEMTs Supported by Numerical Simulations"; IEEE Transactions on Electron Devices, 44, (1997), 1822 - 1828 doi:10.1109/16.641348. BibTeX |
| 97. | C. Köpf, H. Kosina, S. Selberherr: "Physical Models for Strained and Relaxed GaInAs Alloys: Band Structure and Low-Field Transport"; Solid-State Electronics, 41, (1997), 1139 - 1152 doi:10.1016/S0038-1101(97)00051-8. BibTeX |
| 96. | H. Kirchauer, S. Selberherr: "Rigorous Three-Dimensional Photoresist Exposure and Development Simulation over Nonplanar Topography"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 16, (1997), 1431 - 1438 doi:10.1109/43.664225. BibTeX |
| 95. | C. Wasshuber, H. Kosina, S. Selberherr: "SIMON - A Simulator for Single-Electron Tunnel Devices and Circuits"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 16, (1997), 937 - 944 doi:10.1109/43.658562. BibTeX |
| 94. | T. Simlinger, H. Brech, T. Grave, S. Selberherr: "Simulation of Submicron Double-Heterojunction High Electron Mobility Transistors with MINIMOS-NT"; IEEE Transactions on Electron Devices, 44, (1997), 700 - 707 doi:10.1109/16.568029. BibTeX |
| 93. | H. Kirchauer, S. Selberherr: "Three-Dimensional Photolithography Simulation"; IEEE Journal of Technology Computer Aided Design, 1, (1997), doi:10.1109/TCAD.1996.6449163. BibTeX |
| 92. | K. Vinzenz, S. Selberherr: "Kommentar zu Prinzipien der virtuellen Realität und deren Anwendungen in intraoperativen Navigationshilfesystemen"; Acta Chirurgica Austriaca, 28, (invited) (1996), 60 - 61. BibTeX |
| 91. | G. Schrom, C. Pichler, T. Simlinger, S. Selberherr: "On the Lower Bounds of CMOS Supply Voltage"; Solid-State Electronics, 39, (1996), 425 - 430 doi:10.1016/0038-1101(95)00171-9. BibTeX |
| 90. | N. Khalil, J. Faricelli, C. Huang, S. Selberherr: "Two-Dimensional Dopant Profiling of Submicron MOSFET Using Nonlinear Least Squares Inverse Modeling"; Journal of Vacuum Science & Technology B, 14, (1996), 224 - 230 doi:10.1116/1.589033. BibTeX |
| 89. | E. Strasser, S. Selberherr: "Algorithms and Models for Cellular Based Topography Simulation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 14, (1995), 1104 - 1114 doi:10.1109/43.406712. BibTeX |
| 88. | H. Puchner, S. Selberherr: "An Advanced Model for Dopant Diffusion in Polysilicon"; IEEE Transactions on Electron Devices, 42, (1995), 1750 - 1755 doi:10.1109/16.464423. BibTeX |
| 87. | H. Kosina, E. Langer, S. Selberherr: "Device Modelling for the 1990s"; Microelectronics Journal, 26, (invited) (1995), 217 - 233 doi:10.1016/0026-2692(95)98923-F. BibTeX |
| 86. | H. Stippel, E. Leitner, C. Pichler, H. Puchner, E. Strasser, S. Selberherr: "Process Simulation for the 1990s"; Microelectronics Journal, 26, (invited) (1995), 203 - 215 doi:10.1016/0026-2692(95)98922-E. BibTeX |
| 85. | P. Habas: "The Application of Charge-Pumping Technique to Characterize the Si/Si02 Interface in Power VDMOSFETs"; Microelectronic Engineering, 28, (1995), 171 - 174 doi:10.1016/0167-9317(95)00038-A. BibTeX |
| 84. | N. Khalil, J. Faricelli, D. Bell, S. Selberherr: "The Extraction of Two-Dimensional MOS Transistor Doping via Inverse Modeling"; IEEE Electron Device Letters, 16, (1995), 17 - 19 doi:10.1109/55.363213. BibTeX |
| 83. | M. Mukai, T. Tatsumi, N. Nakauchi, T. Kobayashi, K. Koyama, Y. Komatsu, R. Bauer, G. Rieger, S. Selberherr: "The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI"; Technical Report of IEICE, 95, (1995), 63 - 68. BibTeX |
| 82. | S. Halama, F. Fasching, C. Fischer, H. Kosina, E. Leitner, P. Lindorfer, C. Pichler, H. Pimingstorfer, H. Puchner, G. Rieger, G. Schrom, T. Simlinger, M. Stiftinger, H. Stippel, E. Strasser, W. Tuppa, K. Wimmer, S. Selberherr: "The Viennese Integrated System for Technology CAD Applications"; Microelectronics Journal, 26, (1995), 137 - 158 doi:10.1016/0026-2692(95)98918-H. BibTeX |
| 81. | W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr: "Trajectory Split Method for Monte Carlo Simulation of Ion Implantation"; IEEE Transactions on Semiconductor Manufacturing, 8, (1995), 402 - 407 doi:10.1109/66.475181. BibTeX |
| 80. | H. Brand, S. Selberherr: "Two-Dimensional Simulation of Thermal Runaway in a Nonplanar GTO-Thyristor"; IEEE Transactions on Electron Devices, 42, (1995), 2137 - 2146 doi:10.1109/16.477772. BibTeX |
| 79. | S. Halama, C. Pichler, G. Rieger, G. Schrom, T. Simlinger, S. Selberherr: "VISTA - User Interface, Task Level, and Tool Integration"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 14, (1995), 1208 - 1222 doi:10.1109/43.466337. BibTeX |
| 78. | A. Abramo, L. Baudry, R. Brunetti, R. Castagne, M. Charef, F. Dessene, P. Dollfus, W.L. Engl, R. Fauquembergue, C. Fiegna, M.V. Fischetti, S. Galdin, N. Goldsman, M. Hackel, C. Hamaguchi, K. Hess, K. Hennacy, P. Hesto, J.M. Higman, T. Izuka, C. Jungemann, Y. Kamakura, H. Kosina, T. Kunikiyo, S.E. Laux, H. Lin, C. Maziar, H. Mizuno, H.J. Peifer, S. Ramaswamy, N. Sano, P.G. Scrobohaci, S. Selberherr, M. Takenaka, T.-W. Tang, K. Taniguchi, J.L. Thobel, R. Thoma, K. Tomizawa, M. Tomizawa, T. Vogelsang, S.-L. Wang, X. Wang, C.-S. Yao, P.D. Yoder, A. Yoshii: "A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon"; IEEE Transactions on Electron Devices, 41, (1994), 1646 - 1654 doi:10.1109/16.310119. BibTeX |
| 77. | H. Kosina, S. Selberherr: "A Hybrid Device Simulator that Combines Monte Carlo and Drift-Diffusion Analysis"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 13, (1994), 201 - 210 doi:10.1109/43.259943. BibTeX |
| 76. | E. Strasser, G. Schrom, K. Wimmer, S. Selberherr: "Accurate Simulation of Pattern Transfer Processes Using Minkowski Operations"; IEICE Transactions on Electronics, E77-C, (1994), 92 - 97. BibTeX |
| 75. | H. Brand, S. Selberherr: "Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT)"; IEICE Transactions on Electronics, E77-C, (1994), 179 - 186. BibTeX |
| 74. | H. Stippel, S. Selberherr: "Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree"; IEICE Transactions on Electronics, E77-C, (1994), 118 - 123. BibTeX |
| 73. | F. Fasching, W. Tuppa, S. Selberherr: "VISTA - The Data Level"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 13, (1994), 72 - 81 doi:10.1109/43.273748. BibTeX |
| 72. | C. Fischer, G. Nanz, S. Selberherr: "Finite Difference, Boundary-Fitted Grid Generation for Arbitrarily Shaped Two-Dimensional Simulation Areas"; Computer Methods in Applied Mechanics and Engineering, 110, (1993), 17 - 24 doi:10.1016/0045-7825(93)90016-Q. BibTeX |
| 71. | S. Halama, S. Selberherr: "Future Aspects of Process and Device Simulation"; Electron Technology, 26, (invited) (1993), 49 - 57. BibTeX |
| 70. | S. Selberherr: "Technology Computer-Aided Design"; South African Journal of Physics, 16, (invited) (1993), 1 - 5. BibTeX |
| 69. | G. Nanz, P. Dickinger, S. Selberherr: "Calculation of Contact Currents in Device Simulation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 11, (1992), 128 - 136 doi:10.1109/43.108625. BibTeX |
| 68. | M. Hackel, M. Faber, H. Markum, M. Müller: "Chiral Interface for QCD with Dynamical Quarks"; International Journal of Modern Physics C, 3, (1992), 961 - 970 doi:10.1142/S0129183192000622. BibTeX |
| 67. | O. Heinreichsberger, S. Selberherr, M. Stiftinger, K. Traar: "Fast Iterative Solution of Carrier Continuity Equations for Three-Dimensional Device Simulation"; SIAM Journal of Scientific and Statistical Computing, 13, (1992), 289 - 306 doi:10.1137/0913015. BibTeX |
| 66. | M. Hackel, M. Faber, H. Markum: "Interface Tension and Chiral Order Parameter Profile with Dynamical Quarks"; Physical Review D, 46, (1992), 5648 - 5654. BibTeX |
| 65. | P. Habas, J. Faricelli: "Investigation of the Physical Modeling of the Gate-Depletion Effect"; IEEE Transactions on Electron Devices, 39, (1992), 1496 - 1500 doi:10.1109/16.137331. BibTeX |
| 64. | J. Demel, S. Selberherr: "Application of the Complete Tableau Approach in JANAP"; Electrosoft, 2, (1991), 243 - 260. BibTeX |
| 63. | S. Selberherr: "Device Modeling and Physics"; Physica Scripta, T35, (invited) (1991), 293 - 298 doi:10.1088/0031-8949/1991/T35/057. BibTeX |
| 62. | E. Langer: "Fundamental Analysis of Surface Acoustic Wave Propagation"; International Journal of Engineering Science, 29, (1991), 331 - 343 doi:10.1016/0020-7225(91)90153-T. BibTeX |
| 61. | S. Selberherr, M. Stiftinger, O. Heinreichsberger, K. Traar: "On the Numerical Solution of the Three-Dimensional Semiconductor Device Equations on Vector-Concurrent Computers"; Computer Physics Communications, 67, (1991), 145 - 156 doi:10.1016/0010-4655(91)90227-C. BibTeX |
| 60. | G. Nanz, W. Kausel, S. Selberherr: "Self-Adaptive Space and Time Grids in Device Simulation"; International Journal for Numerical Methods in Engineering, 31, (1991), 1357 - 1374 doi:10.1002/nme.1620310709. BibTeX |
| 59. | P. Habas: "A Physics Based Analytical MOSFET Model with Accurate Field Dependent Mobility"; Solid-State Electronics, 33, (1990), 923 - 933 doi:10.1016/0038-1101(90)90074-O. BibTeX |
| 58. | W. Kausel, J.O. Nylander, G. Nanz, S. Selberherr, H. Pötzl: "BAMBI - A Transient 2D-MESFET Model with General Boundary Conditions Including Schottky and Current Controlled Contacts"; Microelectronics Journal, 21, (1990), 5 - 21 doi:10.1016/0026-2692(90)90014-T. BibTeX |
| 57. | H. Kosina, S. Selberherr: "Coupling of Monte Carlo and Drift Diffusion Method with Applications to Metal Oxide Semiconductor Field Effect Transistors"; Japanese Journal of Applied Physics, 29, (1990), L2283 - L2285 doi:10.1143/JJAP.29.L2283. BibTeX |
| 56. | E. Langer: "Fundamental Analysis of Surface Acoustic Wave Propagation"; Archiv für Elektronik und Übertragungstechnik, 44, (1990), 225 - 232. BibTeX |
| 55. | P. Habas, S. Selberherr: "Impact of the Non-Degenerate Gate Effect on the Performance of Submicron MOS-Devices"; Informacije Midem - Journal of Microelectronics Electronic Components and Materials, 20, (1990), 185 - 188. BibTeX |
| 54. | P. Dickinger: "New Models of High Voltage DMOS Devices for Circuit Simulation"; Electrosoft, 1, (1990), 298 - 308. BibTeX |
| 53. | M. Thurner, P. Lindorfer, S. Selberherr: "Numerical Treatment of Nonrectangular Field-Oxide for 3-D MOSFET Simulation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 9, (1990), 1189 - 1197 doi:10.1109/43.62756. BibTeX |
| 52. | P. Habas, S. Selberherr: "On the Effect of Non-Degenerate Doping of Polysilicon Gate in Thin Oxide MOS-Devices - Analytical Modeling"; Solid-State Electronics, 33, (1990), 1539 - 1544 doi:10.1016/0038-1101(90)90134-Z. BibTeX |
| 51. | E. Langer: "Special Issue on "Semiconductor devices and electronic circuit design""; Electrosoft, 1, (1990), . BibTeX |
| 50. | S. Selberherr, W. Hänsch, M. Seavey, J. Slotboom: "The Evolution of the MINIMOS Mobility Model"; Archiv für Elektronik und Übertragungstechnik, 44, (1990), 161 - 172. BibTeX |
| 49. | S. Selberherr, W. Hänsch, M. Seavey, J. Slotboom: "The Evolution of the MINIMOS Mobility Model"; Solid-State Electronics, 33, (1990), 1425 - 1436 doi:10.1016/0038-1101(90)90117-W. BibTeX |
| 48. | S. Selberherr, E. Langer: "Three Dimensional Process and Device Modeling"; Microelectronics Reliability, 30, (1990), 624 doi:10.1016/0026-2714(90)90512-L. BibTeX |
| 47. | M. Thurner, S. Selberherr: "Three-Dimensional Effects Due to the Field Oxide in MOS Devices Analyzed with MINIMOS 5"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 9, (1990), 856 - 867 doi:10.1109/43.57786. BibTeX |
| 46. | J.O. Nylander, F. Masszi, S. Selberherr, S. Berg: "Computer Simulations of Schottky Contacts with a Non-Constant Recombination Velocity"; Solid-State Electronics, 32, (1989), 363 - 367 doi:10.1016/0038-1101(89)90125-1. BibTeX |
| 45. | S. Selberherr: "MOS Device Modeling at 77K"; IEEE Transactions on Electron Devices, 36, (1989), 1464 - 1474 doi:10.1109/16.30960. BibTeX |
| 44. | G. Hobler, S. Selberherr: "Monte Carlo Simulation of Ion Implantation into Two- and Three-Dimensional Structures"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 8, (1989), 450 - 459 doi:10.1109/43.24873. BibTeX |
| 43. | S. Selberherr: "Process Modeling"; Microelectronic Engineering, 9, (1989), 605 - 610 doi:10.1016/0167-9317(89)90129-9. BibTeX |
| 42. | S. Selberherr, E. Langer: "Three Dimensional Process and Device Modeling"; Microelectronics Journal, 20, (invited) (1989), 113 - 127 doi:10.1016/0026-2692(89)90126-2. BibTeX |
| 41. | W. Kausel, H. Pötzl, G. Nanz, S. Selberherr: "Two-Dimensional Transient Simulation of the Turn-Off Behavior of a Planar MOS-Transistor"; Solid-State Electronics, 32, (1989), 685 - 709 doi:10.1016/0038-1101(89)90002-6. BibTeX |
| 40. | S. Selberherr: "Computer für Wissenschaft und Forschung"; Österreichische Hochschulzeitung, 5, (invited) (1988), 9 - 10. BibTeX |
| 39. | S. Selberherr: "Computerunterstützte Konstruktion von Bauelementen der Mikroelektronik"; Österreichische Hochschulzeitung, 7, (invited) (1988), 25. BibTeX |
| 38. | G. Hobler, S. Selberherr: "Two-Dimensional Modeling of Ion Implantation Induced Point Defects"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 7, (1988), 174 - 180 doi:10.1109/43.3147. BibTeX |
| 37. | M. Budil, E. Guerrero, T. Brabec, S. Selberherr, H. Pötzl: "A New Model for the Determination of Point Defect Equilibrium Concentrations in Silicon"; COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 6, (1987), 37 - 44 doi:10.1108/eb010299. BibTeX |
| 36. | W. Hänsch, S. Selberherr: "MINIMOS 3: A MOSFET Simulator that Includes Energy Balance"; IEEE Transactions on Electron Devices, 34, (1987), 1074 - 1078 doi:10.1109/T-ED.1987.23047. BibTeX |
| 35. | G. Hobler, E. Langer, S. Selberherr: "Two-Dimensional Modeling of Ion Implantation with Spatial Moments"; Solid-State Electronics, 30, (1987), 445 - 455 doi:10.1016/0038-1101(87)90175-4. BibTeX |
| 34. | A.R. Baghai-Wadji, S. Selberherr, F. Seifert: "Two-Dimensional Green's Function of a Semi-Infinite Anisotropic Dielectric in the Wavenumber Domain"; IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, UFFC-33, (1986), 315 - 317 doi:10.1109/T-UFFC.1986.26834. BibTeX |
| 33. | S. Selberherr: "Process and Device Modeling for VLSI"; Microelectronics Journal, 16, (1985), 56 - 57 doi:10.1016/S0026-2692(85)80172-5. BibTeX |
| 32. | W. Jüngling, P. Pichler, S. Selberherr, E. Guerrero, H. Pötzl: "Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods"; IEEE Transactions on Electron Devices, 32, (1985), 156 - 167 doi:10.1109/T-ED.1985.21925. BibTeX |
| 31. | W. Jüngling, P. Pichler, S. Selberherr, E. Guerrero, H. Pötzl: "Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods"; IEEE Journal of Solid-State Circuits, 20, (1985), 76 - 87 doi:10.1109/JSSC.1985.1052279. BibTeX |
| 30. | P. Pichler, W. Jüngling, S. Selberherr, E. Guerrero, H. Pötzl: "Simulation of Critical IC-Fabrication Steps"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 4, (1985), 384 - 397 doi:10.1109/TCAD.1985.1270136. BibTeX |
| 29. | P. Pichler, W. Jüngling, S. Selberherr, E. Guerrero, H. Pötzl: "Simulation of Critical IC-Fabrication Steps"; IEEE Transactions on Electron Devices, 32, (1985), 1940 - 1953 doi:10.1109/T-ED.1985.22226. BibTeX |
| 28. | P. Pichler, W. Jüngling, S. Selberherr, H. Pötzl: "Two-Dimensional Coupled Diffusion Modeling"; Physica B: Condensed Matter, 129, (1985), 187 - 191 doi:10.1016/0378-4363(85)90566-2. BibTeX |
| 27. | P. Markowich, S. Selberherr: "A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments"; Matematica Aplicada e Computacional, 3, (1984), 131 - 156. BibTeX |
| 26. | S. Selberherr, Ch. Ringhofer: "Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 3, (1984), 52 - 64 doi:10.1109/TCAD.1984.1270057. BibTeX |
| 25. | A. Schütz, S. Selberherr, H. Pötzl: "Modeling MOS-Transistors in the Avalanche Breakdown Regime"; Transactions on Computer Simulation, 1, (invited) (1984), 1 - 14. BibTeX |
| 24. | W. Jüngling, E. Guerrero, S. Selberherr: "On Modeling the Intrinsic Number and Fermi Levels for Device and Process Simulation"; COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 3, (1984), 79 - 105. BibTeX |
| 23. | S. Selberherr: "Process and Device Modeling for VLSI"; Microelectronics Reliability, 24, (invited) (1984), 225 - 257 doi:10.1016/0026-2714(84)90450-5. BibTeX |
| 22. | A. Schütz, S. Selberherr, H. Pötzl: "Temperature Distribution and Power Dissipation in MOSFETs"; Solid-State Electronics, 27, (1984), 394 - 395 doi:10.1016/0038-1101(84)90175-8. BibTeX |
| 21. | J. Demel, S. Selberherr: "VDPACK - Ein benutzerorientiertes Unterprogrammpaket zur Realisierung einer dynamischen Speicherverwaltung in Fortran"; Angewandte Informatik, 6, (1984), 244 - 247. BibTeX |
| 20. | J. Machek, S. Selberherr: "A Novel Finite Element Approach to Device Modelling"; IEEE Transactions on Electron Devices, 30, (1983), 1083 - 1092 doi:10.1109/T-ED.1983.21262. BibTeX |
| 19. | P. Markowich, Ch. Ringhofer, S. Selberherr: "A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Devices"; MRC Technical Summary Report, 2482, (1983), 1 - 50. BibTeX |
| 18. | P. Markowich, Ch. Ringhofer, S. Selberherr, M. Lentini: "A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Equations"; IEEE Transactions on Electron Devices, 30, (1983), 1165 - 1180 doi:10.1109/T-ED.1983.21273. BibTeX |
| 17. | P. Markowich, Ch. Ringhofer, E. Langer, S. Selberherr: "An Asymptotic Analysis of Single-Junction Semiconductor Devices"; MRC Technical Summary Report, 2527, (1983), 1 - 62. BibTeX |
| 16. | A.F. Franz, G. Franz, S. Selberherr, Ch. Ringhofer, P. Markowich: "Finite Boxes - A Generalization of the Finite Difference Method Suitable for Semiconductor Device Simulation"; IEEE Transactions on Electron Devices, 30, (1983), 1070 - 1082 doi:10.1109/T-ED.1983.21261. BibTeX |
| 15. | Ch. Ringhofer, S. Selberherr: "Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs"; MRC Technical Summary Report, 2513, (1983), 1 - 49. BibTeX |
| 14. | E. Langer, S. Selberherr, P. Markowich, Ch. Ringhofer: "Numerical Analysis of Acoustic Wave Generation in Anisotropic Piezoelectric Materials"; Sensors and Actuators, 4, (1983), 71 - 76 doi:10.1016/0250-6874(83)85010-0. BibTeX |
| 13. | E. Langer, S. Selberherr, H. Mader: "A Numerical Analysis of Bulk-Barrier Diodes"; Solid-State Electronics, 25, (1982), 317 - 324 doi:10.1016/0038-1101(82)90141-1. BibTeX |
| 12. | P. Markowich, Ch. Ringhofer, S. Selberherr, E. Langer: "A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device"; MRC Technical Summary Report, 2388, (1982), 1 - 57. BibTeX |
| 11. | A. Schütz, S. Selberherr, H. Pötzl: "A Two-Dimensional Model of the Avalanche Effect in MOS Transistors"; Solid-State Electronics, 25, (1982), 177 - 183 doi:10.1016/0038-1101(82)90105-8. BibTeX |
| 10. | A. Schütz, S. Selberherr, H. Pötzl: "Analysis of Breakdown Phenomena in MOSFET's"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, CAD-1, (1982), 77 - 85 doi:10.1109/TCAD.1982.1269997. BibTeX |
| 9. | H. Goebl, S. Selberherr, W.-D Rase, H. Pudlatz: "Atlas, Matrices et Similarités: Petit Aperçu Dialectométrique"; Computers and the Humanities, 16, (1982), 69 - 84 doi:10.1007/BF02259737. BibTeX |
| 8. | S. Selberherr, A. Schütz, H. Pötzl: "Investigation of Parameter Sensitivity of Short Channel MOSFETs"; Solid-State Electronics, 25, (1982), 85 - 90 doi:10.1016/0038-1101(82)90035-1. BibTeX |
| 7. | E. Langer, S. Selberherr, H. Mader: "Numerische Analyse der Bulk-Barrier Diode"; Archiv für Elektronik und Übertragungstechnik, 36, (1982), 86 - 91. BibTeX |
| 6. | S. Selberherr, E. Guerrero: "Simple and Accurate Representation of Implantation Parameters by Low Order Polynomals"; Solid-State Electronics, 24, (1981), 591 - 593 doi:10.1016/0038-1101(81)90081-2. BibTeX |
| 5. | S. Selberherr, A. Schütz, H. Pötzl: "Two-Dimensional MOS Transistor Modelling"; European Electronics, 1, (invited) (1981), 20 - 30. BibTeX |
| 4. | S. Selberherr, A. Schütz, H. Pötzl: "MINIMOS - A Two-Dimensional MOS Transistor Analyzer"; IEEE Transactions on Electron Devices, 27, (1980), 1540 - 1550 doi:10.1109/T-ED.1980.20068. BibTeX |
| 3. | S. Selberherr, A. Schütz, H. Pötzl: "MINIMOS - A Two-Dimensional MOS Transistor Analyzer"; IEEE Journal of Solid-State Circuits, 15, (1980), 605 - 615 doi:10.1109/JSSC.1980.1051444. BibTeX |
| 2. | S. Selberherr, A. Schütz, H. Pötzl: "MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren (Teil 1)"; Elektronikschau, 9, (1980), 18 - 23. BibTeX |
| 1. | S. Selberherr, A. Schütz, H. Pötzl: "MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren (Teil 2)"; Elektronikschau, 10, (1980), 54 - 58. BibTeX |