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Publication list for members of
E360 - Institute for Microelectronics
as any persons named in the publication record

1791 records


Talks and Poster Presentations (with or without Proceedings-Entry)


1791. M. Ballicchia, J. Weinbub, M. Nedjalkov, S. Selberherr:
"Classical and Quantum Electron Evolution with a Repulsive Dopant";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona, HI, USA; (invited) 26.11.2017 - 01.12.2017; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2017), ISBN: 978-3-901578-31-1, 105 - 106.

1790. V. Sverdlov, S. Selberherr:
"A Single-Spin Switch";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona, HI, USA; (invited) 26.11.2017 - 01.12.2017; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2017), ISBN: 978-3-901578-31-1, 93 - 94.

1789. V. Sverdlov, J. Weinbub, S. Selberherr:
"Current in Magnetic Tunnel Junctions at Spin-Dependent Hopping";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona, HI, USA; (invited) 26.11.2017 - 01.12.2017; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2017), ISBN: 978-3-901578-31-1, 87 - 88.

1788. V. Sverdlov, A. Makarov, J. Weinbub, S. Selberherr:
"Non-Volatility by Spin in Modern Nanoelectronics";
Talk: International Conference on Microelectronics (MIEL), Nis, Serbia; (invited) 09.10.2017 - 11.10.2017; in "Proceedings of the 30th International Conference on Microelectronics (MIEL 2017)", (2017), ISBN: 978-1-5386-2562-0, 7 - 14.

1787. V. Sverdlov, J. Weinbub, S. Selberherr:
"Spintronics as a Non-Volatile Complement to Nanoelectronics";
Talk: International Conference on Microelectronics, Devices and Materials (MIDEM), Ljubljana, Slovenia; (invited) 06.10.2017 - 08.10.2017; in "Proceedings of the 53rd International Conference on Microelectronics, Devices and Materials (MIDEM 2017)", (2017), 10 page(s) .

1786. T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser:
"Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors";
Talk: Meeting of the Electrochemical Society (ECS), National Harbor, Maryland, USA; (invited) 01.10.2017 - 05.10.2017; in "Proceedings - ECS Transactions - Semiconductors, Dielectrics, and Metals for Nanoelectronics 15: In Memory of Samares Kar", (2017), 15 page(s) doi:10.1149/08001.0203ecst.

1785. L. Gnam, J. Weinbub, K. Rupp, F. Rudolf, S. Selberherr:
"Using Graph Partitioning and Coloring for Flexible Coarse-Grained Shared-Memory Parallel Mesh Adaptation";
Talk: International Meshing Roundtable (IMR), Barcelona, Spanien; 18.09.2017 - 21.09.2017; in "Proceedings of the 26th International Meshing Roundtable (IMR26)", (2017), 5 page(s) .

1784. L. Filipovic, R.L. de Orio, W. H. Zisser, S. Selberherr:
"Modeling Electromigration in Nanoscaled Copper Interconnects";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in "2017 International Conference on Simulation of Semiconductor Processes and Devices", (2017), ISBN: 978-4-86348-612-6, 161 - 164.

1783. M. Kampl, H. Kosina, O. Baumgartner:
"Hot Carrier Study Including e-e Scattering Based on a Backward Monte Carlo Method";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in "2017 International Conference on Simulation of Semiconductor Processes and Devices", (2017), ISBN: 978-4-86348-612-6, 293 - 296.

1782. P. Manstetten, A. Hössinger, J. Weinbub, S. Selberherr:
"Accelerated Direct Flux Calculations Using an Adaptively Refined Icosahedron";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in "2017 International Conference on Simulation of Semiconductor Processes and Devices", (2017), ISBN: 978-4-86348-612-6, 73 - 76.

1781. V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Modeling of Electrical Activation Ratios of Phosphorus and Nitrogen Doped Silicon Carbide";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in "2017 International Conference on Simulation of Semiconductor Processes and Devices", (2017), ISBN: 978-4-86348-612-6, 125 - 128.

1780. V. Sverdlov, H. Mahmoudi, T. Windbacher, A. Makarov, J. Weinbub, S. Selberherr:
"MTJs - Spin-Based Binary Memristors for Non-Volatile Memory and Logic Applications";
Talk: EMN Meeting on Memristive Switching & Network, Milan, Italy; (invited) 14.08.2017 - 18.08.2017; in "Proceedings of EMN Meeting on Memristive Switching & Network 2017", (2017), 33 - 34.

1779. G. Meller, S. Selberherr:
"Simulation of Injection Currents into Disordered Molecular Conductors";
Poster: International Conference on Advanced Nano Materials (ANM), Aveiro, Portugal; 19.07.2017 - 21.07.2017; in "Proceedings of the 9thInternational Conference on Advanced Nano Materials (ANM)", (2017), .

1778. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Analysis of a Spin-Transfer Torque Based Copy Operation of a Buffered Magnetic Processing Environment";
Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA; 08.07.2017 - 11.07.2017; in "Proceedings of the 21st World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2017), ISBN: 978-1-941763-59-9, 142 - 146.

1777. G. Diamantopoulos, J. Weinbub, A. Hössinger, S. Selberherr:
"Evaluation of the Shared-Memory Parallel Fast Marching Method for Re-Distancing Problems";
Talk: International Conference on Computational Science and Its Applications (ICCSA), Trieste, Italy; 03.07.2017 - 06.07.2017; in "Proceedings of the 2017 17th International Conference on Computational Science and Its Applications (ICCSA)", (2017), ISBN: 978-1-5386-3893-4, 1 - 8 doi:10.1109/ICCSA.2017.7999648.

1776. V. Sverdlov, J. Weinbub, S. Selberherr:
"Enhanced Shot Noise as a Signature of Trap-Assisted Tunneling in Magnetic Tunnel Junctions: a Monte Carlo Approach";
Talk: 25th International Symposium on Nanostructures: Physics and Technology, Sankt Petersburg, Russland; 26.06.2017 - 30.06.2017; in "Proceedings of the 25th International Symposium on Nanostructures: Physics and Technology", (2017), ISBN: 978-5-7422-5779-0, 132 - 133.

1775. V. Sverdlov, J. Weinbub, S. Selberherr:
"Electron Spin at Work in Modern and Emerging Devices";
Talk: Energy-Materials-Nanotechnology Meeting (EMN) on Quantum, Wien, Austria; (invited) 18.06.2017 - 22.06.2017; in "Book of Abstracts of the 2017 EMN Meeting on Quantum", (2017), 31 - 33.

1774. J. Cervenka, L. Filipovic:
"Numerical Aspects of the Deterministic Solution of the Wigner Equation";
Poster: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017 in "Book of Abstracts of the 2nd International Wigner Workshop (IW2)", (2017), ISBN: 978-3-200-05129-4, 42 - 43.

1773. P. Ellinghaus, M. Nedjalkov, J. Weinbub, S. Selberherr:
"Wigner Analysis of Surface Roughness in Quantum Wires";
Talk: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017 in "Book of Abstracts of the 2nd International Wigner Workshop (IW2)", (2017), ISBN: 978-3-200-05129-4, 40 - 41.

1772. P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr:
"Wigner Modelling of Surface Roughness in Quantum Wires";
Poster: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in "Abstract Book International Workshop on Computational Nanotechnology", (2017), 171 - 172.

1771. M. Kampl, H. Kosina:
"Investigation of Hot-Carrier Effects Using a Backward Monte Carlo Method and Full Bands";
Poster: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in "Abstract Book International Workshop on Computational Nanotechnology (IWCN)", (2017), 147 - 148.

1770. R. Kosik, M. Kampl, H. Kosina:
"On the Characteristic Neumann Equation and the Wigner Equation";
Talk: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017 in "Book of Abstracts of the 2nd International Wigner Workshop (IW2)", (2017), ISBN: 978-3-200-05129-4, 26 - 27.

1769. T. Sadi, E. Towie, M. Nedjalkov, A. Asenov, S. Selberherr:
"Monte Carlo Particles in Quantum Wires: Effects of the Confinement";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 05.06.2017 - 09.06.2017; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2017), 89 - 90.

1768. V. Sverdlov, J. Weinbub, S. Selberherr:
"Spin-Dependent Trap-Assisted Tunneling in Magnetic Tunnel Junctions: A Monte Carlo Study";
Talk: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in "Abstract Book International Workshop on Computational Nanotechnology", (2017), 88 - 90.

1767. M. Thesberg, H. Kosina:
"NEGF Through Finite-Volume Discretization";
Talk: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in "Abstract Book International Workshop on Computational Nanotechnology", (2017), 173 - 174.

1766. J. Weinbub, M. Nedjalkov, I. Dimov, S. Selberherr:
"Wigner-Signed Particles Study of Double Dopant Quantum Effects";
Poster: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017 in "Book of Abstracts of the 2nd International Wigner Workshop (IW2)", (2017), ISBN: 978-3-200-05129-4, 50 - 51.

1765. L. Gnam, J. Weinbub, A. Hössinger, S. Selberherr:
"Towards a Metric for an Automatic Hull Mesh Coarsening Strategy";
Talk: Vienna Young Scientists Symposium (VSS), Wien, Österreich; 01.06.2017 - 02.06.2017; in "Proceedings of the Vienna Young Scientists Symposium", (2017), ISBN: 978-3-9504017-5-2, 118 - 119.

1764. V. Sverdlov, S. Selberherr:
"Shot noise at spin-dependent hopping in tunnel junctions with ferromagnetic electrodes";
Talk: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Warsaw, Poland; (invited) 28.05.2017 - 30.05.2017; in "Proceedings of the ETCMOS 2017", (2017), ISBN: 1927500869, 57.

1763. B. Ullmann, M. Jech, S. E. Tyaginov, M. Waltl, Yu. Illarionov, A. Grill, K. Puschkarsky, H. Reisinger, T. Grasser:
"The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects";
Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 04.04.2017 - 06.04.2017; in "2017 IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1, XT-10.1 - XT-10.6 doi:10.1109/IRPS.2017.7936424.

1762. A. Chasin, J. Franco, B. Kaczer, V. Putcha, P. Weckx, R. Ritzenthaler, H. Mertens, N. Horiguchi, D. Linten, G. Rzepa:
"BTI Reliability and Time-Dependent Variability of Stacked Gate-All-Around Si Nanowire Transistors";
Poster: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in "Proceedings of IRPS 2017", (2017), ISBN: 978-1-5090-6641-4, 5C-4.1 - 5C-4.7.

1761. T. Grasser, M. Waltl, K. Puschkarsky, B. Stampfer, G. Rzepa, G. Pobegen, H. Reisinger, H. Arimura, B. Kaczer:
"Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up after BTI Stress";
Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in "Proceedings of IRPS 2017", (2017), ISBN: 978-1-5090-6641-4, 6A-2.1 - 6A-2.6.

1760. A. Grill, B. Stampfer, M. Waltl, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, T. Grasser:
"Characterization and Modeling of Single Defects in GaN/AlGaN Fin-MIS-HEMTs";
Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in "Proceedings of 2017 IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 3B-5.1 - 3B-5.5 doi:10.1109/IRPS.2017.7936285.

1759. Yu. Illarionov, M. Waltl, M. Jech, J. Kim, D. Akinwande, T. Grasser:
"Reliability of Black Phosphorus Field-Effect Transistors with Respect to Bias-Temperature and Hot-Carrier Stress";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in "2017 IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1, 6A-6.1 - 6A-6.6 doi:10.1109/IRPS.2017.7936338.

1758. B. Kaczer, G. Rzepa, J. Franco, P. Weckx, A. Chasin, V. Putcha, E. Bury, M. Simicic, Ph. J. Roussel, G. Hellings, A. Veloso, P. Matagne, T. Grasser, D. Linten:
"Benchmarking Time-Dependent Variability of Junctionless Nanowire FETs";
Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in "Proceedings of IRPS 2017", (2017), ISBN: 978-1-5090-6641-4, 2D-6.1 - 2D-6.7.

1757. G. Rzepa, J. Franco, A. Subirats, M. Jech, A. Chasin, A. Grill, M. Waltl, T. Knobloch, B. Stampfer, T. Chiarella, N. Horiguchi, L. Ragnarsson, D. Linten, B. Kaczer, T. Grasser:
"Efficient Physical Defect Model Applied to PBTI in High-κ Stacks";
Poster: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in "Proceedings of IRPS 2017", (2017), ISBN: 978-1-5090-6641-4, XT-11.1 - XT-11.6.

1756. S. Selberherr, T. Windbacher, A. Makarov, V. Sverdlov:
"Exploiting Spin-Transfer Torque for Non-Volatile Computing";
Talk: World Congress of Smart Materials (WCSM), Bangkok; (invited) 16.03.2017 - 18.03.2017; in "Book of Abstracts of BIT's 3rd Annual World Congress of Smart Materials-2017", (2017), 130.

1755. V. Sverdlov, S. Selberherr:
"Shot noise at spin-dependent hopping in tunnel junctions with ferromagnetic electrodes";
Talk: APS March Meeting, New Orleans, USA; 13.03.2017 - 17.03.2017; in "Bulletin of the APS April Meeting 2017", (2017), ISSN: 0003-0503, .

1754. F. Rudolf, A. Morhammer, K. Rupp, J. Weinbub:
"VSC School Project: Performance Enhancements of Algebraic Multigrid Methods in ViennaCL";
Talk: Austrian HPC Meeting (AHPC), Grundlsee; 01.03.2017 - 03.03.2017; in "Book of Abstracts of the 2017 Austrian HPC Meeting (AHPC)", (2017), 1 page(s) .

1753. Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, J. Kim, D. Akinwande, T. Grasser:
"Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs";
Talk: Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan; 28.02.2017 - 02.03.2017; in "2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2017), ISBN: 978-1-5090-4661-4, 114 - 115 doi:10.1109/EDTM.2017.7947532.

1752. P. Manstetten, V. Simonka, G. Diamantopoulos, L. Gnam, A. Makarov, A. Hössinger, J. Weinbub:
"Computational and Numerical Challenges in Semiconductor Process Simulation";
Talk: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 27.02.2017 - 03.03.2017; in "CSE17 Abstracts", (2017), 46.

1751. R. Mills, M. Adams, J. Brown, M. Fabien, T. Isaac, M. Knepley, K. Rupp, B. Smith, H. Zhang:
"Experiences, Optimizations, and Future Directions with Petsc on the 2nd Generation ("Knights Landing") Intel Xeon Phi Processor";
Talk: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 27.02.2017 - 03.03.2017; in "CSE17 Abstracts", (2017), 370 - 371.

1750. P. Sanan, O. Schenk, M. Bollhoefer, K. Rupp, D. May:
"Preconditioners for Stokes Flow with Highly Heterogeneous Viscosity Structure: Saddle-Point Smoothing Via Local Incomplete Factorization";
Talk: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 27.02.2017 - 03.03.2017; in "CSE17 Abstracts", (2017), 258.

1749. V. Sverdlov, J. Weinbub, S. Selberherr:
"Modeling Spin-Dependent Phenomena for New Device Applications";
Talk: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; (invited) 27.02.2017 - 03.03.2017; in "CSE17 Abstracts", (2017), 45 - 46.

1748. P. Ellinghaus, M. Nedjalkov, J. Weinbub, S. Selberherr:
"Wigner Modelling of Quantum Wires";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona, HI, USA; (invited) 04.12.2016 - 09.12.2016; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2016), ISBN: 978-3-901578-30-4, 2.

1747. V. Sverdlov, J. Ghosh, S. Selberherr:
"Universal Dependence of the Spin Lifetime in Silicon Films on the Spin Injection Direction";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona, HI, USA; (invited) 04.12.2016 - 09.12.2016; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2016), ISBN: 978-3-901578-30-4, 7.

1746. T. Windbacher, B.G. Malm, V. Sverdlov, M. Östling, S. Selberherr:
"Influence of the Free Layer Alignment on the Reliability of a Non-Volatile Magnetic Shift Register";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona, HI, USA; (invited) 04.12.2016 - 09.12.2016; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2016), ISBN: 978-3-901578-30-4, 43.

1745. M. Karner, O. Baumgartner, Z. Stanojevic, F. Schanovsky, G. Strof, Ch. Kernstock, H. W. Karner, G. Rzepa, T. Grasser:
"Vertically Stacked Nanowire MOSFETs for Sub-10nm Nodes: Advanced Topography, Device, Variability, and Reliability Simulations";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 03.12.2016 - 07.12.2016; in "Proceedings of IEDM 2016", (2016), ISBN: 978-1-5090-3902-9, 30.7.1 - 30.7.4.

1744. G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
"On the Subthreshold Drain Current Sweep Hysteresis of 4H-SiC nMOSFETs";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 03.12.2016 - 07.12.2016; in "Proceedings of IEDM 2016", (2016), ISBN: 978-1-5090-3902-9, 10.8.1 - 10.8.4.

1743. M. Nedjalkov, J. Weinbub, S. Selberherr:
"Modeling Carrier Transport in Nanoscale Semiconductor Devices";
Talk: BIT's Annual World Congress of Nano Science & Technology, Singapore; (invited) 26.10.2016 - 28.10.2016; in "Abstracts of the BIT's 6th Annual World Congress of Nano Science & Technology-2016", (2016), 377.

1742. B. Kaczer, S. Amoroso, R. Hussin, A. Asenov, J. Franco, P. Weckx, Ph. J. Roussel, G. Rzepa, T. Grasser, N. Horiguchi:
"On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects";
Talk: IEEE International Integrated Reliability Workshop (IIRW), Stanford Sierra Conference Center, S. Lake Tahoe, California, USA; 09.10.2016 - 13.10.2016; in "2016 IEEE International Integrated Reliability Workshop (IIRW)", (2016), ISBN: 978-1-5090-4192-3, 3 page(s) .

1741. M. Nedjalkov, J. Weinbub, I. Dimov, S. Selberherr:
"Signed Particle Interpretation for Wigner-Quantum Electron Evolution";
National Congress of Physical Sciences, Sofia, Bulgaria; (invited) 29.09.2016 - 02.10.2016; in "Abstracts Third National Congress of Physical Sciences", (2016), 1.

1740. N. Neophytou, M. Thesberg, H. Kosina:
"Examining the Effectiveness of Energy-Filtering in 1D vs. 2D Structures Using Quantum Mechanical Transport Simulations";
Talk: European Conference on Thermoelectrics (ECT), Lisbon, Portugal; 20.09.2016 - 23.09.2016; in "Book of Abstracts 14th European Conference on Thermoelectrics", (2016), .

1739. M. Thesberg, N. Neophytou, H. Kosina:
"Calculating the Power Factor of Nano-Composite Materials from Fully Quantum-Mechanical Large-Scale Simulations";
Talk: European Conference on Thermoelectrics (ECT), Lisbon, Portugal; 20.09.2016 - 23.09.2016; in "Book of Abstracts 14th European Conference on Thermoelectrics", (2016), .

1738. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"The Exploitation of Magnetization Orientation Encoded Spin-Transfer Torque for an Ultra Dense Non-Volatile Magnetic Shift Register";
Talk: European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland; 12.09.2016 - 16.09.2016; in "Proceedings of the ESSDERC 46th European Solid-State Device Research Conference", (2016), ISBN: 978-1-5090-2969-3, 311 - 314 doi:10.1109/ESSDERC.2016.7599648.

1737. P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
"Using One-Dimensional Radiosity to Model Neutral Flux in Convex High Aspect Ratio Structures";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in "21st International Conference on Simulation of Semiconductor Processes and Devices", (2016), ISBN: 978-1-5090-0817-9, 265 - 268 doi:10.1109/SISPAD.2016.7605198.

1736. T. Sadi, E. Towie, M. Nedjalkov, C. Riddet, C. Alexander, L. Wang, V. Georgiev, A. Brown, C. Millar, A. Asenov:
"One-Dimensional Multi-Subband Monte Carlo Simulation of Charge Transport in Si Nanowire Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in "21st International Conference on Simulation of Semiconductor Processes and Devices", (2016), ISBN: 978-1-5090-0817-9, 23 - 26 doi:10.1109/SISPAD.2016.7605139.

1735. V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in "21st International Conference on Simulation of Semiconductor Processes and Devices", (2016), ISBN: 978-1-5090-0817-9, 233 - 236 doi:10.1109/SISPAD.2016.7605190.

1734. V. Sverdlov, A. Makarov, T. Windbacher, S. Selberherr:
"Magnetic Field Dependent Tunneling Magnetoresistance through a Quantum Well between Ferromagnetic Contacts";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in "21st International Conference on Simulation of Semiconductor Processes and Devices", (2016), ISBN: 978-1-5090-0817-9, 315 - 318 doi:10.1109/SISPAD.2016.7605210.

1733. T. Windbacher, H. Mahmoudi, A. Makarov, V. Sverdlov, S. Selberherr:
"Logic-in-memory: A Non-Volatile Processing Environment for the Post CMOS Age";
Talk: SISPAD Workshop, Nürnberg, Germany; 05.09.2016 in "21st International Conference on Simulation of Semiconductor Processes and Devices", (2016), .

1732. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Layer Coupling and Read Disturbances in a Buffered Magnetic Logic Environment";
Talk: Spintronics IX, San Diego, CA, USA; (invited) 28.08.2016 - 01.09.2016; in "Proceedings of SPIE", (2016), Vol.9931, 12 page(s) doi:10.1117/12.2236151.

1731. A. Makarov, V. Sverdlov, T. Windbacher, S. Selberherr:
"Silicon Spintronics";
Talk: International Conference on Electronic Materials (ICEM), Singapur; (invited) 04.07.2016 - 08.07.2016; in "Proceedings of the ICEM 2016", (2016), 1 page(s) .

1730. Yu. Illarionov, G. Rzepa, M. Waltl, H. Pandey, S. Kataria, V. Passi, M. Lemme, T. Grasser:
"A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETs";
Talk: Device Research Conference, Newark, Delaware, USA; 19.06.2016 - 22.06.2016; in "74th Device Research Conference Digest", (2016), ISBN: 978-1-5090-2827-6, 89 - 90.

1729. G. Rzepa, M. Waltl, W. Gös, B. Kaczer, J. Franco, T. Chiarella, N. Horiguchi, T. Grasser:
"Complete Extraction of Defect Bands Responsible for Instabilities in n and pFinFETs";
Talk: International Symposium on VLSI Technology, Honolulu, HI, USA; 14.06.2016 - 16.06.2016; in "2016 Symposium on VLSI Technology Digest of Technical Papers", (2016), ISBN: 978-1-5090-0638-0, 208 - 209.

1728. Yu. Illarionov, M. Waltl, J. Kim, D. Akinwande, T. Grasser:
"Temperature-dependent Hysteresis in Black Phosphorus FETs";
Poster: Graphene Week, Warsaw, Poland; 13.06.2016 - 17.06.2016; in "Proceedings of the 2016 Graphene Week", (2016), .

1727. L. Filipovic, S. Selberherr:
"Effects of the Deposition Process Variation on the Performance of Open TSVs";
Poster: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 31.05.2016 - 03.06.2016; in "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), ISBN: 978-1-5090-1204-6, 2188 - 2195 doi:10.1109/ECTC.2016.177.

1726. S. Papaleo, M. Rovitto, H. Ceric:
"Mechanical Effects of the Volmer-Weber Growth in the TSV Sidewall";
Talk: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 31.05.2016 - 03.06.2016; in "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), ISBN: 978-1-5090-1204-6, 1617 - 1622 doi:10.1109/ECTC.2016.19.

1725. M. Rovitto, H. Ceric:
"Electromigration Induced Voiding and Resistance Change in Three-Dimensional Copper Through Silicon Vias";
Talk: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 31.05.2016 - 03.06.2016; in "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), ISBN: 978-1-5090-1204-6, 550 - 556 doi:10.1109/ECTC.2016.49.

1724. H. Ceric, R. Lacerda de Orio, M. Rovitto:
"TCAD Approach for the Assessment of Interconnect Reliability";
Talk: International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP), Bad Schandau, Germany; (invited) 30.05.2016 - 01.06.2016; in "Abstracts of 14th International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP)", (2016), T21.

1723. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Novel Magnetic Devices for Memory and Non-Volatile Computing Applications";
Talk: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Montreal, QC, Canada; 25.05.2016 - 27.05.2016; in "2016 Conference Program of the Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS)", (2016), 14 page(s) .

1722. L. Filipovic, A. P. Singulani, F. Roger, S. Carniello, S. Selberherr:
"Impact of Across-Wafer Variation on the Electrical Performance of TSVs";
Talk: International Interconnect Technology Conference (IITC), San Jose, CA, USA; 23.05.2016 - 26.05.2016; in "Proceedings of IEEE International Interconnect Technology Conference (IITC)", (2016), ISBN: 978-1-5090-0386-0, 130 - 132 doi:10.1109/IITC-AMC.2016.7507707.

1721. T. Windbacher, V. Sverdlov, S. Selberherr:
"Magnetic Nonvolatile Processing Environment";
Talk: I International Scientific and Practical Conference Innovation in the Software Systems of Trains, Samara, Russia; (invited) 19.05.2016 - 20.05.2016; in "Program and Abstracts of the I International Scientific and Practical Conference Innovation in the Software Systems of Trains", (2016), 42 - 43.

1720. K. Rupp, A. Morhammer, T. Grasser, A. Jüngel:
"Parallel Deterministic Solution of the Boltzmann Transport Equation for Semiconductors";
Talk: International Workshop on Finite Elements for Microwave Engineering, Florence, Italy; 16.05.2016 - 18.05.2016; in "Proceedings of the 13th Workshop on Finite Elements for Microwave Engineering", (2016), ISBN: 978-88-6655-967-2, 104.

1719. K. Giering, G.A. Rott, G. Rzepa, H. Reisinger, A. Puppala, T. Reich, W. Gustin, T. Grasser, R. Jancke:
"Analog-circuit NBTI Degradation and Time-dependent NBTI Variability: An Efficient Physics-Based Compact Model";
Talk: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in "Proceedings of the IRPS 2016", (2016), 4C-4-1 - 4C-4-6 doi:10.1109/IRPS.2016.7574540.

1718. T. Grasser, M. Waltl, G. Rzepa, W. Gös, Y. Wimmer, A.-M. El-Sayed, A. Shluger, H. Reisinger, B. Kaczer:
"The "Permanent" Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing";
Talk: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), 5A-2-1 - 5A-2-8 doi:10.1109/IRPS.2016.7574504.

1717. Yu. Illarionov, M. Waltl, M. M. Furchi, T. Müller, T. Grasser:
"Reliability of Single-Layer MoS2 Field-Effect Transistors with SiO2 and hBN Gate Insulators";
Talk: IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in "Proceedings of the 2016 IEEE International Reliability Physics Symposium (IRPS)", (2016), 5A-1-1 - 5A-1-6 doi:10.1109/IRPS.2016.7574543.

1716. S. Papaleo, H. Ceric:
"A Finite Element Method Study of Delamination at the Interface of the TSV Interconnects";
Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA USA; 17.04.2016 - 21.04.2016; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), ISBN: 978-1-4673-9136-8, PA-2-1 - PA-2-4 doi:10.1109/IRPS.2016.7574626.

1715. M. Waltl, A. Grill, G. Rzepa, W. Gös, J. Franco, B. Kaczer, J. Mitard, T. Grasser:
"Nanoscale Evidence for the Superior Reliability of SiGe High-k pMOSFETs";
Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in "Proceedings of IRPS 2016", (2016), XT-02-1 - XT-02-6 doi:10.1109/IRPS.2016.7574644.

1714. M. Nedjalkov, J. Weinbub, S. Selberherr:
"The Description of Carrier Transport for Quantum Systems";
Talk: Energy Materials Nanotechnology Meeting on Quantum, Phuket, Thailand; (invited) 08.04.2016 - 11.04.2016; in "Book of Abstracts of the Energy Materials Nanotechnology Meeting on Quantum", (2016), 41 - 42.

1713. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"Nanoelectronics with Spin";
Talk: World Congress and Expo on Nanotechnology and Materials Science, Dubai, United Arab Emirates; (invited) 04.04.2016 - 06.04.2016; in "Book of Abstracts of the World Congress and Expo on Nanotechnology and Materials Science", (2016), 19 - 20.

1712. A. Selinger, K. Rupp, S. Selberherr:
"Evaluation of Mobile ARM-Based SoCs for High Performance Computing";
Talk: High Performance Computing Symposium (HPC), Pasadena, CA, USA; 03.04.2016 - 06.04.2016; in "Proceedings of the 24th High Performance Computing Symposium", (2016), ISBN: 978-1-5108-2318-1, 21:1 - 21:7 doi:10.22360/SpringSim.2016.HPC.022.

1711. J. Weinbub, A. Hössinger:
"Shared-Memory Parallelization of the Fast Marching Method Using an Overlapping Domain-Decomposition Approach";
Talk: High Performance Computing Symposium (HPC), Pasadena, CA, USA; 03.04.2016 - 06.04.2016; in "Proceedings of the 24th High Performance Computing Symposium", (2016), ISBN: 978-1-5108-2318-1, 18:1 - 18:8 doi:10.22360/SpringSim.2016.HPC.052.

1710. V. Sverdlov, T. Windbacher, A. Makarov, S. Selberherr:
"Silicon Spintronics";
Talk: Energy-Materials-Nanotechnology Meeting on Magnetic Materials (EMN), Kona, USA; (invited) 21.03.2016 - 24.03.2016; in "Book of Abstracts of the 2016 EMN Meeting on Magnetic Materials", (2016), 37 - 38.

1709. V. Sverdlov, S. Selberherr:
"Effects of Spin Relaxation on Trap-Assisted Tunneling Through Ferromagnetic Metal-Oxide-Semiconductor Structures";
Talk: APS March Meeting, Baltimore, USA; 14.03.2016 - 18.03.2016; in "Bulletin of the American Physical Society (APS March Meeting)", (2016), Vol.61/1, ISSN: 0003-0503, 1 page(s) .

1708. L. Filipovic, S. Selberherr:
"Modeling the Deposition and Stress Generation in Thin Films for CMOS-Integrated Gas Sensors";
Talk: World Congress of Smart Materials (WCSM), Singapore; (invited) 04.03.2016 - 06.03.2016; in "Proceedings of the BIT's 2nd Annual World Congress of Smart Materials 2016", (2016), 517.

1707. A. Morhammer, K. Rupp, F. Rudolf, J. Weinbub:
"Optimized Sparse Matrix-Matrix Multilication for Multi-Core CPUs, GPUs and MICs";
Talk: Austrian HPC Meeting (AHPC), Grundlsee, Austria; 22.02.2016 - 24.02.2016; in "Book of Abstracts of the 2016 Austrian HPC Meeting (AHPC)", (2016), 23.

1706. K. Rupp, J. Weinbub:
"A Computational Scientist's Perspective on Current and Future Hardware Architectures";
Talk: Austrian HPC Meeting (AHPC), Grundlsee, Austria; 22.02.2016 - 24.02.2016; in "Book of Abstracts of the 2016 Austrian HPC Meeting (AHPC)", (2016), 24.

1705. P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
"Modeling Neutral Particle Flux in High Aspect Ratio Holes using a One-Dimensional Radiosity Approach";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 25.01.2016 - 27.01.2016; in "Book of Abstracts of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2016), ISBN: 978-3-901578-29-8, 68 - 69.

1704. V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr:
"Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling";
Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 25.01.2016 - 27.01.2016; in "Book of Abstracts of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2016), ISBN: 978-3-901578-29-8, 128 - 129.

1703. V. Sverdlov, S. Selberherr:
"Spin-dependent Resonant Tunneling in Ferromagnet-Oxide-Silicon Structures";
Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Vienna, Austria; 25.01.2016 - 27.01.2016; in "Book of Abstracts of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2016), ISBN: 978-3-901578-29-8, 116 - 117.

1702. L. Wang, T. Sadi, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov:
"Simulation Analysis of the Electro-Thermal Performance of SOI FinFETs";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 25.01.2016 - 27.01.2016; in "Book of Abstracts of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2016), ISBN: 978-3-901578-29-8, 34 - 35.

1701. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"SOT-MRAM based on 1Transistor-1MTJ-Cell Structure";
IEEE Xplore, in "Proceedings of the 15th Non-Volatile Memory Technology Symposium (NVMTS 2015)", (2015), 50 - 53 doi:10.1109/NVMTS.2015.7457479.

1700. L. Wang, T. Sadi, M. Nedjalkov, A. Brown, C. Alexander, B. Cheng, C. Millar, A. Asenov:
"An Advanced Electro-Thermal Simulation Methodology For Nanoscale Device";
IEEE, in "Proceedings of the 2015 International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-51523-5, doi:10.1109/IWCE.2015.7301989.

1699. J. Weinbub, F. Dang, T. Gillberg, S. Selberherr:
"Shared-Memory Parallelization of the Semi-Ordered Fast Iterative Method";
ACM, in "HPC '15 Proceedings of the Symposium on High Performance Computing", (2015), ISBN: 978-1-5108-0101-1, 217 - 224.

1698. T. Grasser, M. Waltl, Y. Wimmer, W. Gös, R. Kosik, G. Rzepa, H. Reisinger, G. Pobegen, A.-M. El-Sayed, A. Shluger, B. Kaczer:
"Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes";
Talk: International Electron Devices Meeting (IEDM), Washington, DC, USA; 07.12.2015 - 09.12.2015; in "Proceedings of the International Electron Devices Meeting (IEDM)", (2015), 535 - 538.

1697. P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr:
"ViennaWD - Applications";
Talk: International Wigner Workshop (IW2), Waikoloa, Hawaii, USA; 29.11.2015 in "Booklet of the 1st International Wigner Workshop (IW2)", (2015), 9.

1696. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"A Novel Method of SOT-MRAM Switching";
Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 29.11.2015 - 04.12.2015; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2015)", (2015), .

1695. V. Sverdlov, S. Selberherr:
"Spin-dependent Trap-assisted Tunneling in Ferromagnet-Oxide-Semiconductor Structures";
Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 29.11.2015 - 04.12.2015; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2015)", (2015), .

1694. J. Weinbub, P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"Comparison of Slab and Block Decomposition Strategies for the Two-Dimensional Wigner Monte Carlo Method";
Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 29.11.2015 - 04.12.2015; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2015)", (2015), .

1693. J. Weinbub, P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"ViennaWD - Status and Outlook";
Talk: International Wigner Workshop (IW2), Waikoloa, Hawaii, USA; 29.11.2015 in "Booklet of the 1st International Wigner Workshop (IW2)", (2015), 8.

1692. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Novel Spintronic Devices for Embedded Spin-Based Memories and Non-Volatile Computing";
Talk: Energy Materials Nanotechnology Fall Meeting (EMN), Las Vegas, USA; (invited) 16.11.2015 - 19.11.2015; in "Book of Abstract of the Energy Materials Nanotechnology Fall Meeting (EMN)", (2015), 15 - 16.

1691. L. Filipovic, S. Selberherr:
"Processing of Integrated Gas Sensor Devices";
Talk: IEEE International Conference on Electrical and Electronic Technology TENCON, Macau, China; (invited) 01.11.2015 - 04.11.2015; in "Proceedings of the IEEE Region 10 Annual Conference (TENCON)", (2015), ISBN: 978-1-4799-8639-2, 6 page(s) doi:10.1109/TENCON.2015.7372781.

1690. K. Rupp:
"Scaling Deterministic Solution of the Boltzmann Transport Equation on Heterogeneous Computing Platforms";
Talk: Scalable Methods for Kinetic Equations, Oak Ridge, TN, USA; (invited) 19.10.2015 - 23.10.2015; in "Scalable Methods for Kinetic Equations - Presentation Titles and Abstracts", (2015), 17.

1689. K. Rupp, S. Balay, J. Brown, M. Knepley, L. McInnes, B. Smith:
"On The Evolution Of User Support Topics in Computational Science and Engineering Software";
Poster: Computational Science & Engineering Software Sustainability and Productivity Challenges (CSESSP Challenges), Rockville, MD, USA; 15.10.2015 - 16.10.2015; in "Computational Science and Engineering Software Sustainability and Productivity Challenges (CSESSP) Workshop", (2015), 1 - 2.

1688. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"SOT-MRAM based on 1Transistor-1MTJ-Cell Structure";
Poster: Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China; 12.10.2015 - 14.10.2015; in "Technical Digest of the 15th Non-Volatile Memory Technology Symposium (NVMTS 2015)", (2015), 105 - 106.

1687. A. Grill, G. Rzepa, P. Lagger, C. Ostermaier, H. Ceric, T. Grasser:
"Charge Feedback Mechanisms at Forward Threshold Voltage Stress in GaN/AlGaN HEMTs";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 11.10.2015 - 15.10.2015; in "Proceedings of the 2015 IEEE International Integrated Reliability Workshop (IIRW)", (2015), ISBN: 978-1-4673-7395-1, 41 - 45 doi:10.1109/IIRW.2015.7437064.

1686. F. Rudolf, J. Weinbub, K. Rupp, A. Morhammer, S. Selberherr:
"Symmetry-Aware 3D Volumetric Mesh Generation - An Analysis of Performance and Element Quality";
Talk: International Meshing Roundtable (IMR), Austin, Texas, USA; 11.10.2015 - 14.10.2015; in "Proceedings of the 24th International Meshing Roundtable (IMR24)", (2015), 5 page(s) .

1685. S. E. Tyaginov, M. Jech, P. Sharma, J. Franco, B. Kaczer, T. Grasser:
"On the Temperature Behavior of Hot-Carrier Degradation";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 11.10.2015 - 15.10.2015; in "2015 IEEE International Integrated Reliability Workshop Final Report (IIRW)", (2015), 143 - 146 doi:10.1109/IIRW.2015.7437088.

1684. L. Filipovic, A. P. Singulani, F. Roger, S. Carniello, S. Selberherr:
"Intrinsic Stress Analysis of Tungsten-Lined Open TSVs";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 05.10.2015 - 09.10.2015; in "Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2015), 71.

1683. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 05.10.2015 - 09.10.2015; in "Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2015), 60.

1682. Yu. Illarionov, M. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov, T. Grasser:
"Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-Thin Barrier Layers in Silicon Microelectronics";
Poster: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 27.09.2015 - 30.09.2015; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3, 330 - 331.

1681. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors";
Talk: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 27.09.2015 - 30.09.2015; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3, 650 - 651.

1680. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"Concept of a SOT-MRAM based on 1Transistor-1MTJ-Cell Structure";
Poster: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 27.09.2015 - 30.09.2015; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3, 140 - 141.

1679. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"Spin-Driven Applications of Silicon and CMOS-Compatible Devices";
Talk: BIT's Annual World Congress of Nano Science & Technology, Xi'an, China; (invited) 24.09.2015 - 26.09.2015; in "Abstracts of the BIT's 5th Annual Congress of Nano Science & Technology-2015", (2015), 175.

1678. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Increase of Surface Roughness and Phonon Scattering Mediated Spin Lifetime in Thin Strained SOI Film";
Talk: European Materials Research Society (EMRS), Warsaw, Poland; 15.09.2015 - 18.09.2015; in "Book of Abstracts of the 2015 E-MRS Fall Meeting", (2015), 1 page(s) .

1677. L. Gerrer, R. Hussin, S. Amoroso, J. Franco, P. Weckx, N. Simicic, N. Horiguchi, B. Kaczer, T. Grasser, A. Asenov:
"Experimental Evidences and Simulations of Trap Generation along a Percolation Path";
Talk: European Solid-State Device Research Conference (ESSDERC), Graz; 14.09.2015 - 18.09.2015; in "Proceedings of the 2015 45th European Solid State Device Research Conference", (2015), ISBN: 978-1-4673-7133-9, 226 - 229 doi:10.1109/ESSDERC.2015.7324755.

1676. M. Hosseini, M. Elahi, M. Pourfath, D. Esseni:
"Strain Engineering of Single-Layer MoS2";
Talk: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; 14.09.2015 - 18.09.2015; in "Proceedings of the 2015 45th European Solid State Device Research Conference", (2015), ISBN: 978-1-4673-7133-9, 314 - 317 doi:10.1109/ESSDERC.2015.7324777.

1675. Yu. Illarionov, M. Waltl, S. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Interplay between Hot Carrier and Bias Stress Components in Single-Layer Double-Gated Graphene Field-Effect Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; 14.09.2015 - 18.09.2015; in "Proceedings of the 2015 45th European Solid State Device Research Conference", (2015), ISBN: 978-1-4673-7133-9, 172 - 175 doi:10.1109/ESSDERC.2015.7324741.

1674. B. Kaczer, J. Franco, P. Weckx, P. Roussel, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, H. Kukner, P. Raghavan, F. Catthoor, G. Rzepa, W. Gös, T. Grasser:
"The Defect-Centric Perspective of Device and Circuit Reliability - From Individual Defects to Circuits";
Talk: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; (invited) 14.09.2015 - 18.09.2015; in "Proceedings of the 2015 45th European Solid State Device Research Conference", (2015), ISBN: 978-1-4673-7860-4, 218 - 225 doi:10.1109/ESSDERC.2015.7324754.

1673. R. Stradiotto, G. Pobegen, C. Ostermaier, T. Grasser:
"On The Fly Characterization of Charge Trapping Phenomena at GaN/Dielectric and GaN/AlGaN/Dielectric Interfaces Using Impedance Measurements";
Talk: European Solid-State Device Research Conference (ESSDERC), Graz; 14.09.2015 - 18.09.2015; in "Proceedings of the 2015 45th European Solid State Device Research Conference", (2015), ISBN: 978-1-4673-7860-4, 218 - 225 doi:10.1109/ESSDERC.2015.7324754.

1672. O. Baumgartner, L. Filipovic, H. Kosina, M. Karner, Z. Stanojevic, H. W. Cheng-Karner:
"Efficient Modeling of Source/Drain Tunneling in Ultra-Scaled Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8, 202 - 205 doi:10.1109/SISPAD.2015.7292294.

1671. H. Ceric, M. Rovitto:
"Impact of Microstructure and Current Crowding on Electromigration: A TCAD Study";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 194 - 197 doi:10.1109/SISPAD.2015.7292292.

1670. H. Demel, Z. Stanojevic, M. Karner, G. Rzepa, T. Grasser:
"Expanding TCAD Simulations from Grid to Cloud";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 186 - 189 doi:10.1109/SISPAD.2015.7292290.

1669. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"Improved Drive-Current into Nanoscaled Channels using Electrostatic Lenses";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 24 - 27 doi:10.1109/SISPAD.2015.7292249.

1668. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Injection Direction Sensitive Spin Lifetime Model in a Strained Thin Silicon Film";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 277 - 280 doi:10.1109/SISPAD.2015.7292313.

1667. M. Karner, Z. Stanojevic, Ch. Kernstock, O. Baumgartner, H. W. Cheng-Karner:
"Hierarchical TCAD Device Simulation of FinFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8, 258 - 261 doi:10.1109/SISPAD.2015.7292308.

1666. Ch. Kernstock, Z. Stanojevic, O. Baumgartner, M. Karner:
"Layout-Based TCAD Device Model Generation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8, 198 - 201 doi:10.1109/SISPAD.2015.7292293.

1665. S. Nazemi, E. Soleimani, M. Pourfath, H. Kosina:
"The Role of Surface Termination Geometry on the Ground-State and Optical Properties of Silicon Nano-Crystals: A Density Functional Theory Study";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8, 333 - 336.

1664. S. Papaleo, W. H. Zisser, H. Ceric:
"Factors that Influence Delamination at the Bottom of Open TSVs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 421 - 424 doi:10.1109/SISPAD.2015.7292350.

1663. G. Rzepa, M. Waltl, W. Gös, B. Kaczer, T. Grasser:
"Microscopic Oxide Defects Causing BTI, RTN, and SILC on High-K FinFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 144 - 147 doi:10.1109/SISPAD.2015.7292279.

1662. P. Sharma, M. Jech, S. E. Tyaginov, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, T. Grasser:
"Modeling of Hot-Carrier Degradation in LDMOS Devices Using a Drift-Diffusion Based Approach";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 60 - 63 doi:10.1109/SISPAD.2015.7292258.

1661. L. Wang, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov:
"3D Electro-Thermal Simulations of Bulk FinFETs with Statistical Variations";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 112 - 115 doi:10.1109/SISPAD.2015.7292271.

1660. Y. Wimmer, W. Gös, A.-M. El-Sayed, A. Shluger, T. Grasser:
"A Density-Functional Study of Defect Volatility in Amorphous Silicon Dioxide";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 44 - 47 doi:10.1109/SISPAD.2015.7292254.

1659. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Improving the Performance of a Non-Volatile Magnetic Flip Flop by Exploiting the Spin Hall Effect";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 446 - 449 doi:10.1109/SISPAD.2015.7292357.

1658. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"Improved Particle Annihilation for Wigner Monte Carlo Simulations on a High-Resolution Mesh";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Book of Abstracts 18th International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 93 - 94.

1657. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"Memory-efficient Particle Annihilation Algorithm for Wigner Monte Carlo Simulations";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Proceedings of the 2015 International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-51523-5, 4 page(s) doi:10.1109/IWCE.2015.7301955.

1656. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Book of Abstracts 18th International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 35 - 36.

1655. J. Ghosh, V. Sverdlov, S. Selberherr:
"Influence of Valley Splitting on Spin Relaxation Time in a Strained Thin Silicon Film";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Proceedings of the 2015 International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-51523-5, 4 page(s) doi:10.1109/IWCE.2015.7301961.

1654. A. Kefayati, M. Pourfath, H. Kosina:
"A Rigorous Study of Nanoscaled Transistors Based on Single-Layer MoS2";
Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Book of Abstracts 18th International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 7 - 8.

1653. M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
"Thermoelectric Power Factor Optimization in Nanocomposites by Energy Filtering Using NEGF";
Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Proceedings of the 2015 International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 4 page(s) .

1652. L. Wang, T. Sadi, M. Nedjalkov, A. Brown, C. Alexander, B. Cheng, C. Millar, A. Asenov:
"An Advanced Electro-Thermal Simulation Methodology For Nanoscale Device";
Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Book of Abstracts 18th International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 155 - 156.

1651. Y. Wimmer, W. Gös, A.-M. El-Sayed, A. Shluger, T. Grasser:
"On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Book of Abstracts 18th International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 97 - 98.

1650. F. Roger, A. P. Singulani, S. Carniello, L. Filipovic, S. Selberherr:
"Global Statistical Methodology for the Analysis of Equipment Parameter Effects on TSV Formation";
Talk: International Workshop on CMOS Variability (VARI), Salvador, Brazil; 01.09.2015 - 04.09.2015; in "Proceedings of the 6th International Workshop on CMOS Variability (VARI)", (2015), ISBN: 978-1-5090-0071-5, 39 - 44 doi:10.1109/VARI.2015.7456561.

1649. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"CMOS-Compatible Spintronic Devices";
Talk: International Symposium on Microelectronics Technology and Devices (SBMicro), Salvador, Brazil; (invited) 01.09.2015 - 04.09.2015; in "Proceedings of the 30th Symposium on Microelectronics Technology and Devices (SBMicro)", (2015), ISBN: 978-1-4673-7162-9, 4 page(s) doi:10.1109/SBMicro.2015.7298103.

1648. J. Ghosh, V. Sverdlov, S. Selberherr:
"Increment of Spin Lifetime by Spin Injection Orientation in Stressed Thin SOI Films";
Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Basel, Switzerland; 10.08.2015 - 13.08.2015; in "Program and Abstract Book of the 8th International School & Conference on Spintronics and Quantum Information Technology", (2015), 130.

1647. V. Sverdlov, S. Selberherr:
"Spin-dependent Trap-assisted Tunneling Including Spin Relaxation at Room Temperature";
Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Basel, Switzerland; 10.08.2015 - 13.08.2015; in "Program and Abstract Book of the 8th International School & Conference on Spintronics and Quantum Information Technology", (2015), 114.

1646. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures";
Talk: International Conference on Insulating Films on Semiconductors (INFOS), Udine, Italy; 29.06.2015 - 02.07.2015; in "Book of Abstracts 19th Conference on Insulating Films on Semiconductors", (2015), ISBN: 978-88-9030-695-2, 235 - 236.

1645. S. Papaleo, W. H. Zisser, H. Ceric:
"Effects of the Initial Stress at the Bottom of Open TSVs";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu, Taiwan; 29.06.2015 - 02.07.2015; in "Proceedings of the IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2015), .

1644. M. Rovitto, W. H. Zisser, H. Ceric:
"Analysis of Electromigration Void Nucleation Failure Time in Open Copper TSVs";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu, Taiwan; 29.06.2015 - 02.07.2015; in "Proceedings of the IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2015), .

1643. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"Silicon Spintronics: Recent Advances and Challenges";
International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT), Samara, Russia; (invited) 29.06.2015 - 30.06.2015; in "Proceedings of the 2015 International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT)", (2015), ISBN: 978-5-93424-739-4, 6 - 7.

1642. L. Filipovic, S. Selberherr:
"Stress in Three-Dimensionally Integrated Sensor Systems";
Talk: International Conference on Materials for Advanced Technologies(ICMAT), Singapore; (invited) 28.06.2015 - 03.07.2015; in "Abstracts of the 2015 International Conference on Materials for Advanced Technologies (ICMAT)", (2015), 342.

1641. M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
"Optimization of Energy Filtering for Power Factor Improvements Through Fully Quantum Mechanical Transport Simulations";
Talk: International Conference on Thermoelectrics & European Conference on Thermoelectrics (ICT&ECT), Dresden, Germany; 28.06.2015 - 02.07.2015; in "Proceedings of the 34th Annual International Conference on Thermoelectrics and the 13th European Conference on Thermoelectrics (ICT&ECT)", (2015), 1 page(s) .

1640. A. Selinger, D. Ojdanic, K. Rupp, E. Langer:
"Eigenvalue Computations on Graphics Processing Units";
Talk: Vienna Young Scientists Symposium - VSS 2015, Vienna University of Technology; 25.06.2015 - 26.06.2015; in "Proceedings of the 2015 Vienna Young Scientist Symposium", (2015), Vol.Gumpoldskirchen, Austria, ISBN: 978-3-9504017-0-7, 40 - 41.

1639. B. Ullmann, M. Waltl, T. Grasser:
"Characterization of the Permanent Component of MOSFET Degradation Mechanisms";
Talk: Vienna Young Scientists Symposium - VSS 2015, Vienna University of Technology; 25.06.2015 - 26.06.2015; in "Proceedings of the 2015 Vienna Young Scient Symposium", (2015), ISBN: 978-3-9504017-0-7, 36 - 37.

1638. V. Sverdlov, D. Osintsev, J. Ghosh, S. Selberherr:
"Strained Silicon-on-Insulator for Spintronic Applications: Giant Spin Lifetime Enhancement";
Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 21.06.2015 - 26.06.2015; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), 63.

1637. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"A Universal Nonvolatile Processing Environment";
Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 21.06.2015 - 26.06.2015; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), 62.

1636. J. Cervenka, P. Ellinghaus:
"Preconditioned Deterministic Solver for the Wigner Equation";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 31.

1635. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"The Influence of Electrostatic Lenses on Wave Packet Dynamics";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 39 - 40.

1634. M. Nedjalkov, P. Ellinghaus, S. Selberherr:
"The Aharanov-Bohm Effect from a Phase Space Perspective";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 59 - 60.

1633. D. Osintsev, J. Ghosh, V. Sverdlov, J. Weinbub, S. Selberherr:
"Spin Lifetime in MOSFETs: A High Performance Computing Approach";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 60 - 61.

1632. F. Rudolf, J. Weinbub, K. Rupp, P. Resutik, S. Selberherr:
"Mesh Healing for TCAD Simulations";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 66.

1631. V. Sverdlov, S. Selberherr:
"Spin-Based CMOS-Compatible Devices";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; (invited) 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 69.

1630. M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
"Thermoelectric Efficiency Improvements through Grain Shape Optimization: A Non-Equilibrium Green´s Function Study";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 70.

1629. J. Weinbub, P. Ellinghaus, S. Selberherr:
"Parallelization of the Two-Dimensional Wigner Monte Carlo Method";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 73.

1628. L. Filipovic, S. Selberherr:
"Stress Considerations in Thin Films for CMOS-Integrated Gas Sensors";
Talk: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 24.05.2015 - 28.05.2015; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), Vol.67, ISSN: 1938-6737, 2 page(s) .

1627. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films";
Talk: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 24.05.2015 - 28.05.2015; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), Vol.67, ISSN: 1938-6737, 2 page(s) .

1626. G. Rzepa, W. Gös, B. Kaczer, T. Grasser:
"Characterization and Modeling of Reliability Issues in Nanoscale Devices";
Talk: IEEE International Symposium on Circuits and Systems (ISCAS), Lisbon, Portugal; (invited) 24.05.2015 - 27.05.2015; in "Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS) 2015", (2015), ISBN: 978-1-4799-8391-9, 2445 - 2448.

1625. V. Sverdlov, S. Selberherr:
"Spin-Based Silicon and CMOS-Compatible Devices";
Talk: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; (invited) 24.05.2015 - 28.05.2015; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), Vol.67, ISSN: 1938-6737, 2 page(s) .

1624. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Novel Buffered Magnetic Logic Gate Grid";
Poster: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 24.05.2015 - 28.05.2015; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), Vol.67, ISSN: 1938-6737, 2 page(s) .

1623. V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
"Electron Spin Lifetime Enhancement by Shear Strain in Thin Silicon Films";
Talk: CMOS Emerging Technologies Research (CMOSETR), Vancouver, BC, Canada; (invited) 20.05.2015 - 22.05.2015; in "Book of Abstracts of the 2015 CMOS Emerging Technologies Research Symposium (CMOSETR)", (2015), ISBN: 978-1-927500-70-5, 58.

1622. H. Ceric, S. Selberherr:
"Compact Model for Solder Bump Electromigration Failure";
Poster: International Interconnect Technology and Materials for Advanced Metallization Conference (IITC/MAM), Grenoble, France; 18.05.2015 - 21.05.2015; in "Proceedings of the International Interconnect Technology and Materials for Advanced Metallization Conference (IITC/MAM)", (2015), ISBN: 978-1-4673-7355-5, 159 - 161 doi:10.1109/IITC-MAM.2015.7325651.

1621. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices";
Talk: International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China; 10.05.2015 - 14.05.2015; in "Proceedings of the 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)", (2015), ISBN: 978-1-4799-6259-4, 389 - 392 doi:10.1109/ISPSD.2015.7123471.

1620. L. Filipovic, S. Selberherr:
"Kinetics of Droplet Motion During Spray Pyrolysis";
Talk: Energy Materials Nanotechnology (EMN East Meeting), Phuket, Thailand; (invited) 08.05.2015 - 11.05.2015; in "EMN Meeting on Droplets 2015 Program and Abstract Book", (2015), 127 - 128.

1619. V. Sverdlov, S. Selberherr:
"Spin-Based Devices for Future Microelectronics";
Talk: International Symposium on Next-Generation Electronics (ISNE), Taipei, Taiwan; (invited) 04.05.2015 - 06.05.2015; in "Proceedings of The 4th International Symposium on Next-Generation Electronics (ISNE 2015)", (2015), 4 page(s) doi:10.1109/ISNE.2015.7132030.

1618. J. Franco, B. Kaczer, P. Roussel, E. Bury, H. Mertens, R. Ritzenthaler, T. Grasser, N. Horiguchi, A. Thean, G Groeseneken:
"NBTI in Si 0.55 Ge 0.45 Cladding p-FinFETs: Porting the Superior Reliability from Planar to 3D Architectures";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 19.04.2015 - 23.04.2015; in "Proceedings of the 2015 IEEE International Reliability Physics Symposium (IRPS)", (2015), 2F.4.1 - 2F.4.5 doi:10.1109/IRPS.2015.7112694.

1617. T. Grasser, M. Waltl, W. Gös, Y. Wimmer, A. El-Sayed, A. Shluger, B. Kaczer:
"On the Volatility of Oxide Defects: Activation, Deactivation, and Transformation";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 19.04.2015 - 23.04.2015; in "Proceedings of the 2015 IEEE International Reliability Physics Symposium (IRPS)", (2015), 5A.3.1 - 5A.3.8 doi:10.1109/IRPS.2015.7112739.

1616. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
"Hot-Carrier Degradation in Single-Layer Double-Gated Graphene Field-Effect Transistors";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 19.04.2015 - 23.04.2015; in "Proceedings of the 2015 IEEE International Reliability Physics Symposium (IRPS)", (2015), XT.2.1 - XT.2.6 doi:10.1109/IRPS.2015.7112834.

1615. B. Kaczer, J. Franco, M. Cho, T. Grasser, P. Roussel, S. E. Tyaginov, M. Bina, Y. Wimmer, L. M. Procel, L. Trojman, F. Crupi, G. Pitner, V. Putcha, P. Weckx, E. Bury, Z. Ji, A. De Keersgieter, T. Chiarella, N. Horiguchi, G Groeseneken, A. Thean:
"Origins and Implications of Increased Channel Hot Carrier Variability in nFinFETs";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 19.04.2015 - 23.04.2015; in "Proceedings of the 2015 IEEE International Reliability Physics Symposium (IRPS)", (2015), 6 page(s) doi:10.1109/IRPS.2015.7112706.

1614. M. Rovitto, W. H. Zisser, H. Ceric, T. Grasser:
"Electromigration Modelling of Void Nucleation in Open Cu-TSVs";
Poster: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Budapest, Hungary; 19.04.2015 - 22.04.2015; in "Proceedings of the IEEE 16th International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)", (2015), ISBN: 978-1-4799-9949-1, 5 page(s) doi:10.1109/EuroSimE.2015.7103100.

1613. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"Silicon Spintronics";
NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting", Lviv, Ukrain; (invited) 13.04.2015 - 16.04.2015; in "Conference Abstracts, NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting"", (2015), ISBN: 978-966-02-7553-9, 44 - 45.

1612. J. Weinbub, F. Dang, T. Gillberg, S. Selberherr:
"Shared-Memory Parallelization of the Semi-Ordered Fast Iterative Method";
Talk: High Performance Computing Symposium (HPC), Alexandria, VA, USA; 12.04.2015 - 15.04.2015; in "Program Book of the 2015 Spring Simulation Multiconference (SpringSim´15)", (2015), ISBN: 1-56555-355-1, 74.

1611. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"Silicon and CMOS-Compatible Spintronics";
Talk: International Conference on Applied Physics, Simulation and Computers (APSAC), Vienna, Austria; (invited) 15.03.2015 - 17.03.2015; in "Proceedings of the International Conference on Applied Physics, Simulation and Computers (APSAC 2015)", (2015), Vol.28, ISBN: 978-1-61804-286-6, 17 - 20.

1610. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect Transistors";
Talk: Graphene 2015, Bilbao, Spain; 10.03.2015 - 13.03.2015; in "Abstracts Graphene 2015", (2015), 1 page(s) .

1609. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Dependence on Spin Injection Orientation in Strained Silicon Films";
Talk: APS March Meeting, San Antonio, USA; 02.03.2015 - 06.03.2015; in "Bulletin of the American Physical Society (APS March Meeting)", (2015), Vol.60/1, .

1608. N. Neophytou, M. Thesberg, M. Pourfath, H. Kosina:
"Calculations of the Thermopower in Materials with Nano-Inclusions Using Quantum Mechanical Simulations";
Talk: APS March Meeting, San Antonio, USA; 02.03.2015 - 06.03.2015; in "Bulletin of the American Physical Society (APS March Meeting)", (2015), Vol.60/1, .

1607. M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
"Optimization of Thermoelectric Properties in Cross-Plane Superlattices - A 1D NEGF Study";
Talk: APS March Meeting, San Antonio, USA; 02.03.2015 - 06.03.2015; in "Bulletin of the American Physical Society (APS March Meeting)", (2015), Vol.60/1, .

1606. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"Efficient High-Frequency Spin-Torque Oscillators Composed of Two Three-Layer MgO-MTJs with a Common Free Layer";
Talk: Iberchip Workshop (IWS), Montevideo, Uruguay; (invited) 24.02.2015 - 27.02.2015; in "Proceedings of 21st Iberchip Worshop", (2015), Vol.23, .

1605. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Dependence of Spin Lifetime on Spin Injection Orientation in Strained Silicon Films";
Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 26.01.2015 - 28.01.2015; in "Proceedings of 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2015), ISBN: 978-1-4799-6910-4, 285 - 288 doi:10.1109/ULIS.2015.7063829.

1604. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Impact of Hot Carrier Stress on the Defect Density and Mobility in Double-Gated Graphene Field-Effect Transistors";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 26.01.2015 - 28.01.2015; in "Proceedings of 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2015), ISBN: 978-1-4799-6910-4, 81 - 84 doi:10.1109/ULIS.2015.7063778.

1603. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"A Model for Hot-Carrier Degradation in nLDMOS Transistors Based on the Exact Solution of the Boltzmann Transport Equation Versus the Drift-Diffusion Scheme";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 26.01.2015 - 28.01.2015; in "Proceedings of 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2015), 21 - 24 doi:10.1109/ULIS.2015.7063763.

1602. A. Makarov, V. Sverdlov, S. Selberherr:
"Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators";
G. Lee (ed); WITPRESS, 1, in "Future Information Engineering", (2014), ISBN: 978-1-84564-855-8, 391 - 398 doi:10.2495/ICIE130451.

1601. J. Franco, B. Kaczer, N. Waldron, Ph. J. Roussel, A. Alian, M. Pourghaderi, Z. Ji, T. Grasser, T. Kauerauf, S. Sioncke, N. Collaert, A. Thean, G. Groeseneken:
"RTN and PBTI-induced Time-Dependent Variability of Replacement Metal-Gate High-k InGaAs FinFETs";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 15.12.2014 - 17.12.2014; in "2014 International Electron Devices Meeting (IEDM) Technical Digest", (2014), ISBN: 978-1-4799-8001-7, 506 - 509 doi:10.1109/IEDM.2014.7047087.

1600. T. Grasser, W. Gös, Y. Wimmer, F. Schanovsky, G. Rzepa, M. Waltl, K. Rott, H. Reisinger, V. Afanas´Ev, A. Stesmans, A. El-Sayed, A. Shluger:
"On the Microscopic Structure of Hole Traps in pMOSFETs";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 15.12.2014 - 17.12.2014; in "2014 International Electron Devices Meeting (IEDM) Technical Digest", (2014), ISBN: 978-1-4799-8001-7, 530 - 533 doi:10.1109/IEDM.2014.7047093.

1599. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"New Design of Spin-Torque Nano-Oscillators";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 30.11.2014 - 05.12.2014; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2014), ISBN: 978-3-901578-28-1, 63.

1598. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Pushing a Non-Volatile Magnetic Device Structure Towards a Universal CMOS Logic Replacement";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 30.11.2014 - 05.12.2014; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2014), ISBN: 978-3-901578-28-1, 62.

1597. L. Filipovic, S. Selberherr:
"About Processes and Performance of Integrated Gas Sensor Components";
Talk: Energy Materials Nanotechnology (EMN East Meeting), Orlando, USA; (invited) 22.11.2014 - 25.11.2014; in "Abstracts Intl.Conf.on Energy - Materials - Nanotechnology (EMN)", (2014), 96 - 97.

1596. L. Filipovic, S. Selberherr:
"Spray Pyrolysis Deposition for Gas Sensor Integration in the Backend of Standard CMOS Processes";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Guilin, China; (invited) 28.10.2014 - 31.10.2014; in "Proc.Intl.Conf.on Solid-State and Integrated Circuit Technology (ICSICT)", (2014), ISBN: 978-1-4799-3282-5, 1692 - 1695 doi:10.1109/ICSICT.2014.7021507.

1595. H. Ceric, W. H. Zisser, S. Selberherr:
"Quantum Mechanical Calculations of Electromigration Characteristics";
Talk: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; (invited) 15.10.2014 - 17.10.2014; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 16.

1594. L. Filipovic, S. Selberherr:
"Stress Considerations for System-on-Chip Gas Sensor Integration in CMOS Technology";
Talk: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 15.10.2014 - 17.10.2014; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 41.

1593. S. Papaleo, W. H. Zisser, A. P. Singulani, H. Ceric, S. Selberherr:
"Stress Evolution During the Nanoindentation in Open TSVs";
Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 15.10.2014 - 17.10.2014; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 44.

1592. W. H. Zisser, H. Ceric, S. Selberherr:
"Void Evolution in Open TSVs";
Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 15.10.2014 - 17.10.2014; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 58.

1591. K. Giering, C. Sohrmann, G. Rzepa, L. Heiß, T. Grasser, R. Jancke:
"NBTI Modeling in Analog Circuits and its Application to Long-Term Aging Simulations";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 12.10.2014 - 16.10.2014; in "2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 29 - 34 doi:10.1109/IIRW.2014.7049501.

1590. R. Lacerda de Orio, S. Gousseau, S. Moreau, H. Ceric, S. Selberherr, A. Farcy, F. Bay, K. Inal, P. Montmitonnet:
"On the Material Depletion Rate Due to Electromigration in a Copper TSV Structure";
Poster: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake, CA, USA; 12.10.2014 - 16.10.2014; in "Final Report International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7274-6, 111 - 114 doi:10.1109/IIRW.2014.7049523.

1589. S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, B. Kaczer, H. Ceric, T. Grasser:
"Dominant Mechanism of Hot-Carrier Degradation in Short- and Long-Channel Transistors";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 12.10.2014 - 16.10.2014; in "2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 63 - 68 doi:10.1109/IIRW.2014.7049512.

1588. Y. Wimmer, S. E. Tyaginov, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser:
"Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 12.10.2014 - 16.10.2014; in "2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 58 - 62 doi:10.1109/IIRW.2014.7049511.

1587. L. Filipovic, S. Selberherr:
"The Effects of Etching and Deposition on the Performance and Stress Evolution of Open Through Silicon Vias";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 29.09.2014 - 02.10.2014; in "Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), 36.

1586. W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr:
"Electromigration Reliability of Open TSV Structures";
Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 29.09.2014 - 02.10.2014; in "Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), 48.

1585. V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
"Modeling Silicon Spintronics";
Talk: International Conference on Mathematical Models and Methods in Applied Sciences (MMMAS), Saint-Petersburg, Russia; (invited) 23.09.2014 - 25.09.2014; in "Abstracts 2014", (2014), 78.

1584. M. Schrems, J. Siegert, P. Dorfi, J. Kraft, E. Stueckler, F. Schrank, S. Selberherr:
"Manufacturing of 3D Integrated Sensors and Circuits";
Talk: European Solid-State Device Research Conference (ESSDERC), Venice, Italy; (invited) 22.09.2014 - 26.09.2014; in "Proceedings of the 44th European Solid-State Device Research Conference", (2014), ISBN: 978-1-4799-4377-7, 162 - 165 doi:10.1109/ESSDERC.2014.6948785.

1583. V. Sverdlov, D. Osintsev, S. Selberherr:
"Spin behaviour in strained silicon films";
Talk: European Material Research Society (E-MRS) Fall Meeting, Warsaw, Poland; (invited) 15.09.2014 - 18.09.2014; in "Abstracts of E-MRS Fall Meeting", (2014), 1 page(s) .

1582. O. Baumgartner, Z. Stanojevic, L. Filipovic, A. Grill, T. Grasser, H. Kosina, M. Karner:
"Investigation of Quantum Transport in Nanoscaled GaN High Electron Mobility Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 117 - 120 doi:10.1109/SISPAD.2014.6931577.

1581. H. Ceric, W. H. Zisser, M. Rovitto, S. Selberherr:
"Electromigration in Solder Bumps: A Mean-Time-to-Failure TCAD Study";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 221 - 224 doi:10.1109/SISPAD.2014.6931603.

1580. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"The Wigner Monte Carlo Method for Accurate Semiconductor Device Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 113 - 116 doi:10.1109/SISPAD.2014.6931576.

1579. L. Filipovic, O. Baumgartner, Z. Stanojevic, H. Kosina:
"BTB Tunneling in InAs/Si Heterojunctions";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 245 - 248 doi:10.1109/SISPAD.2014.6931609.

1578. L. Filipovic, F. Rudolf, E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, A. P. Singulani, R. Minixhofer, S. Selberherr:
"Three-Dimensional Simulation for the Reliability and Electrical Performance of Through-Silicon Vias";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 341 - 344 doi:10.1109/SISPAD.2014.6931633.

1577. W. Gös, M. Waltl, Y. Wimmer, G. Rzepa, T. Grasser:
"Advanced Modeling of Charge Trapping: RTN, 1/f noise, SILC, and BTI";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; (invited) 09.09.2014 - 11.09.2014; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 77 - 80 doi:10.1109/SISPAD.2014.6931567.

1576. D. Osintsev, V. Sverdlov, T. Windbacher, S. Selberherr:
"Increasing Mobility and Spin Lifetime with Shear Strain in Thin Silicon Films";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 193 - 196 doi:10.1109/SISPAD.2014.6931596.

1575. F. Rudolf, J. Weinbub, K. Rupp, A. Morhammer, S. Selberherr:
"Template-Based Mesh Generation for Semiconductor Devices";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 217 - 220 doi:10.1109/SISPAD.2014.6931602.

1574. K. Rupp, M. Bina, Y. Wimmer, A. Jungel, T. Grasser:
"Cell-Centered Finite Volume Schemes for Semiconductor Device Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 365 - 368 doi:10.1109/SISPAD.2014.6931639.

1573. G. Rzepa, W. Gös, G.A. Rott, K. Rott, M. Karner, C. Kernstock, B. Kaczer, H. Reisinger, T. Grasser:
"Physical Modeling of NBTI: From Individual Defects to Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 81 - 84 doi:10.1109/SISPAD.2014.6931568.

1572. Z. Stanojevic, O. Baumgartner, M. Karner, L. Filipovic, C. Kernstock, H. Kosina:
"On the Validity of Momentum Relaxation Time in Low-Dimensional Carrier Gases";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 181 - 184 doi:10.1109/SISPAD.2014.6931593.

1571. S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser:
"A Predictive Physical Model for Hot-Carrier Degradation in Ultra-Scaled MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 89 - 92 doi:10.1109/SISPAD.2014.6931570.

1570. L. Wang, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov:
"3D Coupled Electro-Thermal FinFET Simulations Including the Fin Shape Dependence of the Thermal Conductivity";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 269 - 272 doi:10.1109/SISPAD.2014.6931615.

1569. T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Influence of Device Geometry on the Non-Volatile Magnetic Flip Flop Characteristics";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 297 - 300 doi:10.1109/SISPAD.2014.6931622.

1568. W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr:
"Electromigration Induced Resistance Increase in Open TSVs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 249 - 252 doi:10.1109/SISPAD.2014.6931610.

1567. S. E. Tyaginov, M. Bina, J. Franco, B. Kaczer, T. Grasser:
"On the Importance of Electron-electron Scattering for Hot-carrier Degradation";
Talk: International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan; 08.09.2014 - 11.09.2014; in "Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM)", (2014), 858 - 859.

1566. M. Moradinasab, M. Pourfath, H. Kosina:
"Improved Active Region Designs for Mode Locking in Quantum Cascade Lasers";
Poster: International Quantum Cascade Lasers School & Workshop, Policoro (Matera), Italy; 07.09.2014 - 12.09.2014; in "International Quantum Cascade Lasers School & Workshop 2014", (2014), 182 - 183.

1565. S. Papaleo, W. H. Zisser, A. P. Singulani, H. Ceric, S. Selberherr:
"Stress Analysis in Open TSVs after Nanoindentation";
Talk: GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects, Thun, Switzerland; 04.09.2014 - 05.09.2014; in "Abstracts", (2014), 39 - 40.

1564. W. H. Zisser, H. Ceric, S. Selberherr:
"Stress Development and Void Evolution in Open TSVs";
Talk: GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects, Thun, Switzerland; 04.09.2014 - 05.09.2014; in "Abstracts", (2014), 38 - 39.

1563. M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina:
"A Numerical Study of Line-Edge Roughness in Graphene Superlattice-Based Photodetectors";
Talk: International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Palma de Mallorca, Spain; 01.09.2014 - 04.09.2014; in "Proceedings of the 14th International Conference on Numerical Simulation of Optoelectronic Devices", (2014), 1 - 2.

1562. J. Cervenka, P. Ellinghaus, M. Nedjalkov:
"Deterministic Solution of the Discrete Wigner Equation";
Talk: International Conference on Numerical Methods and Applications, Borovets, Bulgaria; 20.08.2014 - 24.08.2014; in "Eighth International Conference on Numerical Methods and Applications", (2014), 36.

1561. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"Optimized Particle Regeneration Scheme for the Wigner Monte Carlo Method";
Talk: International Conference on Numerical Methods and Applications, Borovets, Bulgaria; 20.08.2014 - 24.08.2014; in "Eighth International Conference on Numerical Methods and Applications", (2014), 19.

1560. M. Moradinasab, M. Pourfath, H. Kosina:
"An Instability Study in Terahertz Quantum Cascade Lasers";
Talk: Int. Conf. on Superlattices, Nanostructures and Nanodevices (ICSNN), Savannah, GA, USA; 03.08.2014 - 08.08.2014; in "Proc.Intl.Conf.on Superlattices, Nanostructures and Nanodevices (ICSNN)", (2014), 10.

1559. D. Osintsev, V. Sverdlov, S. Selberherr:
"Valley degeneracy and spin lifetime enhancement in stressed silicon films";
Poster: 8th International Conference on Physics and Applications of Spin Phenomena in Solids (PASPS VIII), Washington, D.C., USA; 28.07.2014 - 31.07.2014; in "Book of Abstracts", (2014), 1.

1558. J. Ghosh, V. Sverdlov, S. Selberherr:
"Spin Diffusion in Silicon from a Ferromagnetic Contact";
Talk: 10th European Conference on Magnetic Sensors and Actuators (EMSA 2014), Vienna, Austria; 06.07.2014 - 09.07.2014; in "Book of Abstracts", (2014), ISBN: 978-3-85465-021-8, 165.

1557. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"Micromagnetic Modeling of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer";
Talk: 10th European Conference on Magnetic Sensors and Actuators (EMSA 2014), Vienna, Austria; 06.07.2014 - 09.07.2014; in "Book of Abstracts", (2014), ISBN: 978-3-85465-021-8, 166.

1556. N. Neophytou, H. Kosina:
"Field Effect Density Modulation in Nanowires for Large Thermoelectric Power Factors: A Self-Consistent Atomistic Simulation Approach";
Talk: International Conference on Thermoelectrics, Nashville, USA; 06.07.2014 - 10.07.2014; in "Book of Abstracts", (2014), 1 page(s) .

1555. V. Sverdlov, A. Makarov, S. Selberherr:
"Structural Optimization of MTJs for STT-MRAM and Oscillator Applications";
Talk: Symposium on CMOS Emerging Technologies, Grenoble, France; 06.07.2014 - 08.07.2014; in "Abstracts: 2014 CMOS Emerging Technologies Research Symposium", (2014), ISBN: 978-1-927500-45-3, 19.

1554. E. Bury, R. Degraeve, M. Cho, B. Kaczer, W. Gös, T. Grasser, N. Horiguchi, G. Groeseneken:
"Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG Device";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3929-9, 254 - 257.

1553. H. Ceric, S. Selberherr:
"Electromigration Reliability of Solder Bumps";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2, 336 - 339 doi:10.1109/IPFA.2014.6898145.

1552. L. Filipovic, R. Orio, S. Selberherr:
"Effects of Sidewall Scallops on the Performance and Reliability of Filled Copper and Open Tungsten TSVs";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2, 321 - 326 doi:10.1109/IPFA.2014.6898137.

1551. T. Grasser, K. Rott, H. Reisinger, M. Waltl, W. Gös:
"Evidence for Defect Pairs in SiON pMOSFETs";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3929-9, 262 - 267.

1550. W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr:
"Electromigration Reliability of Open TSV Structures";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2, 317 - 320 doi:10.1109/IPFA.2014.6898179.

1549. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Compact Modeling of Memristive IMP Gates for Reliable Stateful Logic Design";
Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland; 19.06.2014 - 21.06.2014; in "Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems", (2014), 26.

1548. V. Sverdlov, H. Mahmoudi, A. Makarov, T. Windbacher, S. Selberherr:
"Magnetic Tunnel Junctions for Future Memory and Logic-in-Memory Applications";
Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland; (invited) 19.06.2014 - 21.06.2014; in "Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems", (2014), 17.

1547. F. Rudolf, Y. Wimmer, J. Weinbub, K. Rupp, S. Selberherr:
"Mesh Generation Using Dynamic Sizing Functions";
Talk: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 15.06.2014 - 20.06.2014; in "Proc. 4th European Seminar on Computing", (2014), 191.

1546. K. Rupp, F. Rudolf, J. Weinbub, A. Jungel, T. Grasser:
"Automatic Finite Volume Discretizations Through Symbolic Computations";
Talk: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 15.06.2014 - 20.06.2014; in "Proc. 4th European Seminar on Computing", (2014), 192.

1545. J. Weinbub, K. Rupp, F. Rudolf:
"A Flexible Material Database for Computational Science and Engineering";
Talk: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 15.06.2014 - 20.06.2014; in "Proc. 4th European Seminar on Computing", (2014), 226.

1544. I. Dimov, M. Nedjalkov, J. M. Sellier, S. Selberherr:
"Neumann Series Analysis of the Wigner Equation Solution";
Talk: European Conference on Mathematics for Industry (ECMI), Taormina, Italy; (invited) 09.06.2014 - 14.06.2014; in "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), 459.

1543. N. Neophytou, H. Karamitaheri, H. Kosina:
"Full-Band Simulations of Thermoelectric Properties of Si Nanowires and Thin Layers";
Talk: European Conference on Mathematics for Industry (ECMI), Taormina, Italy; (invited) 09.06.2014 - 14.06.2014; in "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), 1.

1542. Z. Stanojevic, O. Baumgartner, M. Karner, L. Filipovic, C. Kernstock, H. Kosina:
"Advanced Numerical Methods for Semi-Classical Transport Simulation in Ultra-Narrow Channels";
Talk: European Conference on Mathematics for Industry (ECMI), Taormina, Italy; (invited) 09.06.2014 - 14.06.2014; in "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), 1.

1541. V. Sverdlov, D. Osintsev, S. Selberherr:
"Electron Momentum and Spin Relaxation in Silicon Films: A Rigorous k p-based Approach";
Talk: European Conference on Mathematics for Industry (ECMI), Taormina, Italy; (invited) 09.06.2014 - 14.06.2014; in "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), 454 - 456.

1540. Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
"Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: A Reliability Challenge";
Talk: Silicon Nanoelectronics Workshop, Honolulu, Hawaii, USA; 08.06.2014 - 09.06.2014; in "2014 IEEE Silicon Nanoelectronics Workshop", (2014), ISBN: 978-1-4799-5677-7, 29 - 30.

1539. Z. Stanojevic, O. Baumgartner, M. Karner, L. Filipovic, C. Kernstock, H. Kosina:
"Full-Band Modeling of Mobility in p-Type FinFETs";
Poster: Silicon Nanoelectronics Workshop, Honolulu, Hawaii, USA; 08.06.2014 - 09.06.2014; in "2014 IEEE Silicon Nanoelectronics Workshop", (2014), ISBN: 978-1-4799-5676-0, 83 - 84.

1538. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"Efficient Calculation of the Two-Dimensional Wigner Potential";
Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 19 - 20.

1537. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"Implications of the Coherence Length on the Discrete Wigner Potential";
Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 155 - 156.

1536. L. Filipovic, O. Baumgartner, Z. Stanojevic, H. Kosina:
"Band-to-Band Tunneling in 3D Devices";
Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 13 - 14.

1535. J. Ghosh, V. Sverdlov, S. Selberherr:
"Spin Injection in Silicon: The Role of Screening Effects";
Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 63 - 64.

1534. N. Neophytou, H. Kosina:
"Thermoelectric properties of gated Si nanowires";
Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 197 - 198.

1533. D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
"Valley Splitting and Spin Lifetime Enhancement in Ultra-Scaled MOSFETs";
Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 59 - 60.

1532. J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
"The Multi-Dimensional Transient Challenge: The Wigner Particle Approach";
Talk: International Workshop on Computational Electronics (IWCE), Paris, France; (invited) 03.06.2014 - 06.06.2014; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 119 - 120.

1531. Z. Stanojevic, L. Filipovic, O. Baumgartner, H. Kosina:
"Fast Methods for Full-Band Mobility Calculation";
Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 51 - 52.

1530. S. Touski, Z. Chaghazardi, M. Pourfath, M. Moradinasab, R. Faez, H. Kosina:
"Spin Transport in Graphene Nanoribbons: The Role of Surface-Corrugation";
Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 101 - 102.

1529. T. Windbacher, D. Osintsev, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator";
Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 193 - 194.

1528. M. Vexler, Yu. Illarionov, S. E. Tyaginov, N. S. Sokolov, V. V. Fedorov, T. Grasser:
"Simulation of the Electrical Characteristics of the Devices with Thin Calcium Fluoride Films on Silicon-(111) Using MINIMOS-NT";
Talk: DIELECTRICS-2014, St-Petersburg, Russia; 02.06.2014 - 06.06.2014; in "Materials of XIII International conference DIELECTRICS", (2014), 159 - 162.

1527. L. Filipovic, R. Orio, S. Selberherr, A. P. Singulani, F. Roger, R. Minixhofer:
"Effects of Sidewall Scallops on Open Tungsten TSVs";
Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in "Conference Proceedings of International Reliability Physics Symposium", (2014), ISBN: 978-1-4799-3317-4, 3E.3.1 - 3E.3.6 doi:10.1109/IRPS.2014.6860633.

1526. T. Grasser, K. Rott, H. Reisinger, M. Waltl, J. Franco, B. Kaczer:
"A unified perspective of RTN and BTI";
Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in "Conference Proceedings of International Reliability Physics Symposium", (2014), ISBN: 978-1-4799-3317-4, 4A.5.1 - 4A.5.7.

1525. Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, H. Reisinger, B. Kaczer, T. Grasser:
"A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-scaled MOSFETs";
Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in "Conference Proceedings of International Reliability Physics Symposium", (2014), ISBN: 978-1-4799-3317-4, XT13.1 - XT13.6.

1524. B. Kaczer, C. Chen, P. Weckx, Ph. J. Roussel, M. Toledano-Luque, M. Cho, J. Watt, K. Chanda, G. Groeseneken, T. Grasser:
"Maximizing reliable performance of advanced CMOS circuits-A case study";
Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in "Conference Proceedings of International Reliability Physics Symposium", (2014), ISBN: 978-1-4799-3317-4, 2D.4.1 - 2D.4.6.

1523. S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, O. Triebl, B. Kaczer, T. Grasser:
"Physical Modeling of Hot-Carrier Degradation for Short- and Long-channel MOSFETs";
Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in "Conference Proceedings of International Reliability Physics Symposium", (2014), ISBN: 978-1-4799-3317-4, XT16.1 - XT16.8.

1522. M. Waltl, W. Gös, K. Rott, H. Reisinger, T. Grasser:
"A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS Case";
Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in "Conference Proceedings of International Reliability Physics Symposium", (2014), ISBN: 978-1-4799-3317-4, XT18.1 - XT18.5.

1521. T. Grasser, G. Rzepa, M. Waltl, W. Gös, K. Rott, G.A. Rott, H. Reisinger, J. Franco, B. Kaczer:
"Characterization and Modeling of Charge Trapping: From Single Defects to Devices";
Talk: IEEE International Conference on IC Design and Technology (ICICDT), Austin, TX, USA; (invited) 28.05.2014 - 30.05.2014; in "Proceedings of IEEE International Conference on IC Design and Technology", (2014), ISBN: 978-1-4799-2153-9, 1 - 4 doi:10.1109/ICICDT.2014.6838620.

1520. H. Ceric, S. Selberherr:
"Electromigration Induced Failure of Solder Bumps and the Role of IMC";
Poster: International Interconnect Technology Conference (IITC), San Jose, USA; 20.05.2014 - 23.05.2014; in "Proc. Intl. Interconnect Technology Conference (IITC)", (2014), ISBN: 978-1-4799-5017-1, 265 - 267 doi:10.1109/IITC.2014.6831891.

1519. K. Rupp, Ph. Tillet, F. Rudolf, J. Weinbub, T. Grasser, A. Jüngel:
"Performance Portability Study of Linear Algebra Kernels in OpenCL";
Talk: International Workshop on OpenCL (IWOCL), Bristol, UK; 12.05.2014 - 13.05.2014; in "Proceedings of the International Workshop on OpenCL 2013 & 2014 (IWOCL)", (2014), ISBN: 978-1-4503-3007-7, 11 page(s) doi:10.1145/2664666.2664674.

1518. V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, S. Selberherr:
"Modeling Spin-Based Electronic Devices";
International Conference on Microelectronics (MIEL), Belgrade, Serbia; (invited) 12.05.2014 - 14.05.2014; in "Proceedings of the 29th International Conference on Microelectronics", (2014), ISBN: 978-1-4799-5295-3, 27 - 34 doi:10.1109/MIEL.2014.6842081.

1517. Y. Wang, M. Baboulin, K. Rupp, O. Le Maitre:
"Solving 3D incompressible Navier-Stokes equations on hybrid CPU/GPU systems";
Talk: High Performance Computing Symposium (HPC), Tampa, Florida, USA; 13.04.2014 - 16.04.2014; in "HPC '14 Proceedings of the High Performance Computing Symposium", (2014), 1 - 8.

1516. L. Filipovic, R. Orio, S. Selberherr:
"Process and Reliability of SF6/O2 Plasma Etched Copper TSVs";
Talk: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Ghent, Belgium; 07.04.2014 - 09.04.2014; in "Proceedings of the IEEE 15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)", (2014), ISBN: 978-1-4799-4791-1, 4 page(s) doi:10.1109/EuroSimE.2014.6813768.

1515. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"High Performance MRAM-Based Stateful Logic";
Poster: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 07.04.2014 - 09.04.2014; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9, 117 - 120 doi:10.1109/ULIS.2014.6813912.

1514. Z. Stanojevic, L. Filipovic, O. Baumgartner, M. Karner, C. Kernstock, H. Kosina:
"Full-Band Transport in Ultra-Narrow p-Type Si Channels: Field, Orientation, Strain";
Poster: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 07.04.2014 - 09.04.2014; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), 4 page(s) .

1513. V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, S. Selberherr:
"Modeling of Spin-Based Silicon Technology";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; (invited) 07.04.2014 - 09.04.2014; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9, 1 - 4 doi:10.1109/ULIS.2014.6813891.

1512. T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 07.04.2014 - 09.04.2014; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9, 9 - 12 doi:10.1109/ULIS.2014.6813893.

1511. A. Makarov, D. Osintsev, V. Sverdlov, S. Selberherr:
"Modeling Spin-Based Electronic Devices";
Talk: Nano and Giga Challenges in Microelectronics (NGCM), Phoenix, USA; (invited) 10.03.2014 - 14.03.2014; in "Book of Abstracts", (2014), 1 page(s) .

1510. K. Rupp, Ph. Tillet, A. Jungel, T. Grasser:
"Achieving Portable High Performance for Iterative Solvers on Accelerators";
Talk: Annual Meeting of the International Association of Applied Mathematics and Mechanics (GAMM), Erlangen, Germany; 10.03.2014 - 14.03.2014; in "Book of Abstracts", (2014), 815.

1509. N. Neophytou, H. Kosina:
"Thermoelectric Properties of Gated Silicon Nanowires";
Talk: APS March Meeting, Denver, USA; 03.03.2014 - 07.03.2014; in "Bulletin of the American Physical Society (APS March Meeting)", (2014), 1 page(s) .

1508. D. Osintsev, V. Sverdlov, S. Selberherr:
"Mobility and spin lifetime enhancement in thin silicon films by shear strain";
Talk: APS March Meeting, Denver, USA; 03.03.2014 - 07.03.2014; in "Bulletin of the American Physical Society (APS March Meeting)", (2014), Vol.59/1, 1 page(s) .

1507. E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, R. Minixhofer, L. Filipovic, R. Orio, S. Selberherr:
"Coupled Simulation to Determine Across Wafer Variations for Electrical and Reliability Parameters of Through-Silicon VIAs";
Talk: European Workshop on Materials for Advanced Metallization (MAM), Chemnitz, Germany; 02.03.2014 - 05.03.2014; in "Book of Abstracts", (2014), 2 page(s) .

1506. D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
"Valley Splitting and Spin Lifetime Enhancement in Strained Silicon Heterostructures";
Poster: International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 23.02.2014 - 28.02.2014; in "Proceedings of International Winterschool on New Developments in Solid State Physics", (2014), 88 - 89.

1505. H. Ceric, R. Orio, A. P. Singulani, S. Selberherr:
"3D Technology Interconnect Reliability TCAD";
Talk: Pan Pacific Microelectronics Symposium, Big Island of Hawaii, USA; 11.02.2014 - 13.02.2014; in "Proceedings of the 2014 Pan Pacific Microelectronics Symposium", (2014), ISBN: 978-0-9888873-3-6, 1 - 8.

1504. L. Filipovic, R. Orio, S. Selberherr:
"Process and performance of Copper TSVs";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2.

1503. L. Filipovic, Z. Stanojevic, O. Baumgartner, H. Kosina:
"3D Modeling of Direct Band-to-Band Tunneling in Nanowire TFETs";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2.

1502. D. Osintsev, V. Sverdlov, S. Selberherr:
"Increasing mobility and spin lifetime with shear strain in thin silicon films";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2.

1501. Z. Stanojevic, O. Baumgartner, L. Filipovic, H. Kosina:
"Comprehensive Low-Field Mobility Modeling in Nano-Scaled SOI Channels";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2.

1500. A. Makarov, V. Sverdlov, S. Selberherr:
"Structural Optimization of MTJs with a Composite Free Layer";
8813, SPIE Digital Library, in "Proceedings of SPIE", (2013), ISBN: 978-0-8194-9728-4, 88132Q1 - 88132Q9 doi:10.1117/12.2025568.

1499. A. Makarov, V. Sverdlov, S. Selberherr:
"Fast Switching STT-MRAM Cells for Future Universal Memory";
Talk: Advanced Workshop on Frontiers in Electronics (WOFE), San Juan, Puerto Rico; (invited) 17.12.2013 - 20.12.2013; in "Abstracts Advanced Workshop on Frontiers in Electronics (WOFE)", (2013), 1 page(s) .

1498. J. Ghosh, V. Sverdlov, S. Selberherr:
"Influence of a Space Charge Region on Spin Transport in Semiconductor";
Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland, USA; 11.12.2013 - 13.12.2013; in "Abstracts International Semiconductor Device Research Symposium (ISDRS)", (2013), ISBN: 978-1-63173-156-3, 27.

1497. J. Franco, B. Kaczer, Ph. J. Roussel, J. Mitard, S. Sioncke, L. Witters, H. Mertens, T. Grasser, G. Groeseneken:
"Understanding the Suppressed Charge Trapping in Relaxed- and Strained Ge/SiO2/HfO2 pMOSFETs and Implications for the Screening of Alternative High-Mobility Substrate/Dielectric CMOS Gate Stacks";
Talk: International Electron Devices Meeting (IEDM), Washington, DC, USA; 09.12.2013 - 11.12.2013; in "2013 International Electron Devices Meeting (IEDM) Technical Digest", (2013), 397 - 400 doi:10.1109/IEDM.2013.6724634.

1496. T. Grasser, K. Rott, H. Reisinger, M. Waltl, P.-J. Wagner, F. Schanovsky, W. Gös, G. Pobegen, B. Kaczer:
"Hydrogen-Related Volatile Defects as the Possible Cause for the Recoverable Component of NBTI";
Talk: International Electron Devices Meeting (IEDM), Washington, DC, USA; 09.12.2013 - 11.12.2013; in "2013 International Electron Devices Meeting (IEDM) Technical Digest", (2013), 409 - 412 doi:10.1109/IEDM.2013.6724637.

1495. Z. Stanojevic, M. Karner, H. Kosina:
"Exploring the Design Space of Non-Planar Channels: Shape, Orientation, and Strain";
Talk: International Electron Devices Meeting (IEDM), Washington, DC, USA; 09.12.2013 - 11.12.2013; in "2013 International Electron Devices Meeting (IEDM) Technical Digest", (2013), 332 - 335 doi:10.1109/IEDM.2013.6724618.

1494. A. Makarov, V. Sverdlov, S. Selberherr:
"Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer: Micromagnetic Modeling";
Poster: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 08.12.2013 - 13.12.2013; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2013)", (2013), 2 page(s) .

1493. D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Enhancement in Strained Thin Silicon Films";
Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 08.12.2013 - 13.12.2013; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2013)", (2013), 2 page(s) .

1492. D. Narducci, B. Lorenzi, R. Tonini, S. Frabboni, G. Gazzadi, G. Ottaviani, N. Neophytou, X. Zianni:
"Paradoxical Enhancement of the Power Factor in Polycrystalline Silicon Due to the Formation of Nanovoids";
Talk: European Conference on Thermoelectrics (ECT), Noordwijk, The Netherlands; 18.11.2013 - 20.11.2013; in "Book of Abstracts", (2013), 52.

1491. S. Wolf, N. Neophytou, Z. Stanojevic:
"Monte Carlo Simulations Of Thermal Conductivity Nanoporous Si Membranes";
Talk: European Conference on Thermoelectrics (ECT), Noordwijk, The Netherlands; 18.11.2013 - 20.11.2013; in "Book of Abstracts", (2013), 1 - 4.

1490. T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, W. Gös, B. Kaczer:
"Recent Advances in Understanding Oxide Traps in pMOS Transistors";
Talk: International Workshop on Dielectric Thin Films For Future Electron Devices: Science and Technology, Tokyo, Japan; (invited) 07.11.2013 - 09.11.2013; in "Proceedings of 2013 IWDTF", (2013), ISBN: 978-4-86348-383-5, 95 - 96.

1489. J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr:
"Spin Injection and Diffusion in Silicon Based Devices from a Space Charge Layer";
Talk: Annual Conference on Magnetism and Magnetic Materials, Denver, USA; 04.11.2013 - 08.11.2013; in "Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM)", (2013), 713 - 714.

1488. T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Novel Bias-Field-Free Large Gain Spin-Transfer Oscillator";
Talk: Annual Conference on Magnetism and Magnetic Materials, Denver, USA; 04.11.2013 - 08.11.2013; in "Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM)", (2013), 456 - 457.

1487. A. Makarov, V. Sverdlov, S. Selberherr:
"Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators";
Talk: Intl.Conf.on Information Engineering (ICIE), Hong Kong; 01.11.2013 - 02.11.2013; in "Abstracts Intl.Conf.on Information Engineering (ICIE)", (2013), 7.

1486. W. Gös, M. Toledano-Luque, F. Schanovsky, M. Bina, O. Baumgartner, B. Kaczer, T. Grasser:
"Multi-Phonon Processes as the Origin of Reliability Issues";
Talk: Meeting of the Electrochemical Society (ECS), San Francisco, USA; (invited) 27.10.2013 - 01.11.2013; in "ECS Transactions 2013 - "Semiconductors, Dielectrics, and Materials for Nanoelectronics 11"", (2013), Vol.58/7/, 31 - 47 doi:10.1149/05807.0031ecst.

1485. H. Ceric, A. P. Singulani, R. Orio, S. Selberherr:
"Electromigration Enhanced Growth of Intermetallic Compound in Solder Bumps";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), ISBN: 978-1-4799-0350-4, 166 - 169 doi:10.1109/IIRW.2013.6804185.

1484. R. Coppeta, H. Ceric, D. Holec, T. Grasser:
"Critical thickness for GaN thin film on AlN substrate";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), ISBN: 978-1-4799-0350-4, 133 - 136.

1483. J. Franco, B. Kaczer, P. Roussel, M. Toledano-Luque, P. Weckx, T. Grasser:
"Relevance of non-exponential single-defect-induced threshold voltage shifts for NBTI Variability";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), ISBN: 978-1-4799-0350-4, 69 - 72.

1482. B. Kaczer, C. Chen, J. Watt, K. Chanda, P. Weckx, M. Toledano-Luque, G. Groeseneken, T. Grasser:
"Reliability and Performance Considerations for NMOSFET Pass Gates in FPGA Applications";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), ISBN: 978-1-4799-0350-4, 94 - 97.

1481. G.A. Rott, H. Nielen, H. Reisinger, W. Gustin, S. E. Tyaginov, T. Grasser:
"Drift Compensating Effect during Hot-Carrier Degradation of 130nm Dual Gate Oxide p-channel Transistors";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), ISBN: 978-1-4799-0350-4, 73 - 77.

1480. S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, Y. Wimmer, B. Kaczer, T. Grasser:
"Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETs";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), ISBN: 978-1-4799-0350-4, 98 - 101.

1479. W. H. Zisser, H. Ceric, R. Orio, S. Selberherr:
"Electromigration Induced Stress in Open TSVs";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), ISBN: 978-1-4799-0350-4, 142 - 145 doi:10.1109/IIRW.2013.6804179.

1478. W. Gös, M. Toledano-Luque, O. Baumgartner, M. Bina, F. Schanovsky, B. Kaczer, T. Grasser:
"Understanding Correlated Drain and Gate Current Fluctuations";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, France; (invited) 30.09.2013 - 04.10.2013; in "20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2013), 51 - 56.

1477. Yu. Illarionov, S. E. Tyaginov, M. Bina, T. Grasser:
"A method to determine the lateral trap position in ultra-scaled MOSFETs";
Talk: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 24.09.2013 - 27.09.2013; in "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials(SSDM)", (2013), ISBN: 978-4-86348-362-0, 728 - 729.

1476. A. Makarov, V. Sverdlov, S. Selberherr:
"Concept of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs";
Talk: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 24.09.2013 - 27.09.2013; in "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (SSDM 2013)", (2013), ISBN: 978-4-86348-362-0, 796 - 797.

1475. N. Neophytou, Z. Stanojevic, H. Kosina:
"Low-Field Mobility of Ultra-Narrow Si Nanowire MOSFETs Using Self-Consistent Full-Band Simulations";
Poster: International Conference on One Dimensional Nanomaterials (ICON), Annecy, France; 23.09.2013 - 26.09.2013; in "Booklet of Abstracts, Fifth International Conference on One Dimensional Nanomaterials", (2013), 142.

1474. K. Rupp, Ph. Tillet, B. Smith, T. Grasser, A. Jungel:
"A Note on the GPU Acceleration of Eigenvalue Computations";
Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodes, Greece; 21.09.2013 - 27.09.2013; in "AIP Proceedings, volume 1558", (2013), 1536 - 1539.

1473. Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, D. V. Isakov, I. Grekhov:
"Optical characterization of the injection properties of MIS structures with thin CaF2 and HfO2/SiO2 insulating layers on Silicon";
Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 16.09.2013 - 20.09.2013; in "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3, 229.

1472. D. Osintsev, V. Sverdlov, S. Selberherr:
"Reduction of Momentum and Spin Relaxation Rate in Strained Thin Silicon Films";
Talk: European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania; 16.09.2013 - 20.09.2013; in "Proceedings of the 43rd European Solid-State Device Research Conference (ESSDERC)", (2013), ISBN: 978-1-4799-0649-9, 334 - 337 doi:10.1109/ESSDERC.2013.6818886.

1471. S. E. Tyaginov, D. Osintsev, Yu. Illarionov, J.M. Park, H. Enichlmair, M. I. Vexler, T. Grasser:
"Tunnelling of strongly non-equilibrium carriers in the transistors of traditional configuration";
Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 16.09.2013 - 20.09.2013; in "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3, 441.

1470. M. I. Vexler, Yu. Illarionov, S. M. Suturin, V. V. Fedorov, N. S. Sokolov:
"Tunnel charge transport in Au/CaF2/Si(111) system";
Talk: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 16.09.2013 - 20.09.2013; in "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3, 74.

1469. S. Amoroso, L. Gerrer, A. Asenov, J. M. Sellier, I. Dimov, M. Nedjalkov, S. Selberherr:
"Quantum Insights in Gate Oxide Charge-Trapping Dynamics in Nanoscale MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 25 - 28 doi:10.1109/SISPAD.2013.6650565.

1468. O. Baumgartner, M. Bina, W. Gös, F. Schanovsky, M. Toledano-Luque, B. Kaczer, H. Kosina, T. Grasser:
"Direct Tunneling and Gate Current Fluctuations";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 17 - 20 doi:10.1109/SISPAD.2013.6650563.

1467. H. Ceric, A. P. Singulani, R. Orio, S. Selberherr:
"Impact of Intermetallic Compound on Solder Bump Electromigration Reliability";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 73 - 76 doi:10.1109/SISPAD.2013.6650577.

1466. R. Coppeta, H. Ceric, B. Karunamurthy, T. Grasser:
"Epitaxial Volmer-Weber Growth Modelling";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 45 - 48 doi:10.1109/SISPAD.2013.6650570.

1465. L. Filipovic, O. Baumgartner, H. Kosina:
"Modeling Direct Band-to-Band Tunneling using QTBM";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 212 - 215 doi:10.1109/SISPAD.2013.6650612.

1464. L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger:
"Modeling the Growth of Thin SnO2 Films using Spray Pyrolysis Deposition";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 208 - 211 doi:10.1109/SISPAD.2013.6650611.

1463. B. Kaczer, V. Afanas´Ev, K. Rott, F. Cerbu, J. Franco, W. Gös, T. Grasser, O. Madia, D. Nguyen, A. Stesmans, H. Reisinger, M. Toledano-Luque, P. Weckx:
"Experimental characterization of BTI defects";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; (invited) 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 444 - 450 doi:10.1109/SISPAD.2013.6650670.

1462. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Performance Analysis and Comparison of Two 1T/1MTJ-based Logic Gates";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 163 - 166 doi:10.1109/SISPAD.2013.6650600.

1461. N. Neophytou, Z. Stanojevic, H. Kosina:
"Full Band Calculations of Low-field Mobility in p-type Silicon Nanowire MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 81 - 84 doi:10.1109/SISPAD.2013.6650579.

1460. R. Orio, H. Ceric, S. Selberherr:
"Influence of Temperature on the Standard Deviation of Electromigration Lifetimes";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 232 - 235 doi:10.1109/SISPAD.2013.6650617.

1459. D. Osintsev, V. Sverdlov, S. Selberherr:
"Evaluation of Spin Lifetime in Strained UT2B Silicon-On-Insulator MOSFETs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 236 - 239 doi:10.1109/SISPAD.2013.6650618.

1458. F. Schanovsky, O. Baumgartner, W. Gös, T. Grasser:
"A Detailed Evaluation of Model Defects as Candidates for the Bias Temperature Instability";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 1 - 4 doi:10.1109/SISPAD.2013.6650559.

1457. F. Schanovsky, W. Gös, T. Grasser:
"Advanced Modeling of Charge Trapping at Oxide Defects";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; (invited) 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 451 - 458 doi:10.1109/SISPAD.2013.6650671.

1456. J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
"Two-dimensional Transient Wigner Particle Model";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 404 - 407 doi:10.1109/SISPAD.2013.6650660.

1455. A. P. Singulani, H. Ceric, S. Selberherr:
"Stress Estimation in Open Tungsten TSV";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 65 - 68 doi:10.1109/SISPAD.2013.6650575.

1454. Z. Stanojevic, H. Kosina:
"Surface-Roughness-Scattering in Non-Planar Channels - the Role of Band Anisotropy";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 352 - 355 doi:10.1109/SISPAD.2013.6650647.

1453. T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Rigorous Simulation Study of a Novel Non-Volatile Magnetic Flip-Flop";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 368 - 371 doi:10.1109/SISPAD.2013.6650651.

1452. W. H. Zisser, H. Ceric, R. Orio, S. Selberherr:
"Electromigration Analyses of Open TSVs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 244 - 247 doi:10.1109/SISPAD.2013.6650620.

1451. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"STT-MRAM-Based Reprogrammable Logic Gates for Large-Scale Non-Volatile Logic Integration";
Poster: International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey; 02.09.2013 - 06.09.2013; in "Proceedings of the International Conference on Nanoscale Magnetism", (2013), 208.

1450. A. Makarov, V. Sverdlov, S. Selberherr:
"Geometry Optimization of Spin-Torque Oscillators Composed of Two MgO-MTJs with a Shared Free Layer";
Talk: International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey; 02.09.2013 - 06.09.2013; in "Proceedings of the International Conference on Nanoscale Magnetism", (2013), 69.

1449. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Simulation of Magnetic Oscillations in a System of two MTJs with a Shared Free Layer";
Poster: Soft Magnetic Materials Conference (SMM), Budapest, Hungary; 01.09.2013 - 04.09.2013; in "Abstracts Book of The 21st International Conference on Soft Magnetic Materials", (2013), 101.

1448. K. Rupp, Ph. Tillet, F. Rudolf, J. Weinbub:
"ViennaCL - Portable High Performance at High Convenience";
Talk: The European Conference on Numerical Mathematics and Advanced Applications (ENUMATH), Lausanne, Switzerland; (invited) 26.08.2013 - 30.08.2013; in "ENUMATH 2013 Proceedings", (2013), 1 - 2.

1447. A. Makarov, V. Sverdlov, S. Selberherr:
"Structural Optimization of MTJs with a Composite Free Layer";
Talk: Conf. on Spintronics (SPINTRONICS), San Diego, USA; (invited) 25.08.2013 - 29.08.2013; in "Proceedings of SPIE", (2013), Vol.8813, ISBN: 978-0-8194-9728-4, 88132Q1-2Q9 doi:10.1117/12.2025568.

1446. T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Novel Non-Volatile Magnetic Flip Flop";
Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Chicago Illinois USA; 29.07.2013 - 02.08.2013; in "In Proceedings of Seventh International School on Spintronics and Quantum Information Technology", (2013), 1 page(s) .

1445. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"STT-MTJ-Based Implication Logic Circuits for Non-Volatile Logic-in-Memory Applications";
Talk: Symposium on CMOS Emerging Technologies, Whistler, BC, Canada; (invited) 17.07.2013 - 19.07.2013; in "Book of Abstracts of the 2013 Symposium on CMOS Emerging Technologies (CMOS ET 2013)", (2013), ISBN: 978-1-927500-38-5, 1 page(s) .

1444. H. Ceric, R. Orio, S. Selberherr:
"Analysis of Solder Bump Electromigration Reliability";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 713 - 716 doi:10.1109/IPFA.2013.6599258.

1443. W. Gös, M. Toledano-Luque, O. Baumgartner, M. Bina, F. Schanovsky, B. Kaczer, T. Grasser:
"Understanding Correlated Drain and Gate Current Fluctuations";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 51 - 56.

1442. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"MRAM-based Logic Array for Large-Scale Non-Volatile Logic-in-Memory Applications";
Talk: 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA; 15.07.2013 - 17.07.2013; in "Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures", (2013), ISBN: 978-1-4799-0873-8, 2 page(s) doi:10.1109/NanoArch.2013.6623033.

1441. A. Makarov, V. Sverdlov, S. Selberherr:
"Transverse Domain Wall Formation in a Free Layer: A Mechanism for Switching Failure in a MTJ-based STT-MRAM";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 267 - 270 doi:10.1109/IPFA.2013.6599165.

1440. D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Using Strain to Increase the Reliability of Scaled Spin MOSFETs";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 770 - 773 doi:10.1109/IPFA.2013.6599272.

1439. A. P. Singulani, H. Ceric, E. Langer:
"Stress Evolution on Tungsten Thin-Film of an Open Through Silicon Via Technology";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 216 - 220.

1438. T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Novel MTJ-Based Shift Register for Non-Volatile Logic Applications";
Talk: 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA; 15.07.2013 - 17.07.2013; in "Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures", (2013), 36 - 37 doi:10.1109/NanoArch.2013.6623038.

1437. L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank:
"Modeling Spray Pyrolysis Deposition";
Talk: World Congress on Engineering (WCE), London, UK; 03.07.2013 - 05.07.2013; in "Proceedings of the World Congress on Engineering (WCE) Vol II", (2013), ISBN: 978-988-19252-8-2, 987 - 992.

1436. H. Karamitaheri, N. Neophytou, H. Kosina:
"Thermal Conductivity of Si Nanowires and Ultra Thin-Layers Using Atomistic Phonon Dispersions";
Talk: The 32nd International Conference on Thermoelectrics, Kobe, Japan; 30.06.2013 - 04.07.2013; in "Book of Abstracts", (2013), 1 page(s) .

1435. N. Neophytou, H. Karamitaheri, H. Kosina:
"Low Dimensional Semiconductor Thermoelectric Materials: Design Approaches from Atomistic Calculations for Electrons and Phonons";
Talk: The 32nd International Conference on Thermoelectrics, Kobe, Japan; 30.06.2013 - 04.07.2013; in "Book of Abstracts", (2013), 1 page(s) .

1434. R. Orio, S. Selberherr:
"About Voids in Copper Interconnects";
Talk: International Conference on Materials for Advanced Technologies (ICMAT), Singapore; (invited) 30.06.2013 - 05.07.2013; in "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2013)", (2013), 8.

1433. G.G. Kareva, M. I. Vexler, Yu. Illarionov:
"Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling Diode";
Poster: International Conference on Insulating Films on Semiconductors (INFOS), Cracow, Poland; 25.06.2013 - 28.06.2013; in "Book of Abstracts", (2013), ISBN: 978-83-7814-115-0, 246 - 247.

1432. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Design and Applications of Magnetic Tunnel Junction Based Logic Circuits";
Talk: The 9th Conference on Ph.D. Research in Microelectronics & Electronics- PRIME 2013, Villach, Austria; 24.06.2013 - 27.06.2013; in "Proceedings of the 9th Conference on Ph.D. Research in Microelectronics & Electronics", (2013), ISBN: 978-1-4673-4580-4, 157 - 160 doi:10.1109/PRIME.2013.6603122.

1431. A. Makarov, V. Sverdlov, S. Selberherr:
"Magnetic oscillation of the transverse domain wall in a penta-layer MgO-MTJ";
Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 24.06.2013 - 28.06.2013; in "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6, 338 - 339.

1430. D. Osintsev, V. Sverdlov, S. Selberherr:
"Calculation of the electron mobility and spin lifetime enhancement by strain in thin silicon films";
Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 24.06.2013 - 28.06.2013; in "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6, 69 - 70.

1429. Ph. Tillet, K. Rupp, S. Selberherr, C. Lin:
"Towards Performance-Portable, Scalable, and Convenient Linear Algebra";
Talk: USENIX Workshop on Hot Topics in Parallelism, San Jose, CA, USA; 24.06.2013 - 25.06.2013; in "Proceedings of 5th USENIX Workshop on Hot Topics in Parallelism", (2013), 1 - 8.

1428. A. P. Singulani, H. Ceric, E. Langer:
"Stress reduction induced by Bosch scallops on an open TSV technology";
Poster: International Interconnect Technology Conference (IITC), Kyoto, Japan; 13.06.2013 - 15.06.2013; in "Proceedings of International Interconnect Techonology Conference (IITC)", (2013), ISBN: 978-1-4799-0438-9, 1 - 2 doi:10.1109/IITC.2013.6615578.

1427. M. Toledano-Luque, B. Kaczer, J. Franco, P. Roussel, M. Bina, T. Grasser, M. Cho, P. Weckx, G Groeseneken:
"Degradation of time dependent variability due to interface state generation";
Talk: International Symposium on VLSI Technology, Kyoto, Japan; 11.06.2013 - 14.06.2013; in "2013 Symposium on VLSI Technology (VLSIT)", (2013), ISBN: 978-1-4673-5226-0, 190 - 191.

1426. Z. Stanojevic, H. Kosina:
"Modeling Surface-Roughness-Induced Scattering in Non-Planar Silicon Nanostructures";
Talk: Silicon Nanoelectronics Workshop, Kyoto, Japan; 09.06.2013 - 10.06.2013; in "The 2013 Silicon Nanoelectronics Workshop (SNW)", (2013), 93 - 94.

1425. O. Baumgartner, Z. Stanojevic, H. Kosina:
"Modeling of the Effects of Band Structure and Transport in Quantum Cascade Detectors";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 86 - 87.

1424. W. Gös, M. Toledano-Luque, O. Baumgartner, F. Schanovsky, B. Kaczer, T. Grasser:
"A Comprehensive Model for Correlated Drain and Gate Current Fluctuations";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 46 - 47.

1423. H. Karamitaheri, N. Neophytou, H. Kosina:
"Thermal Conductivity of Si Nanowires Using Atomistic Phonon Dispersions";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 98 - 99.

1422. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Optimization of Spin-Transfer Torque Magnetic Tunnel Junction-Based Logic Gates";
Poster: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 244 - 245.

1421. A. Makarov, V. Sverdlov, S. Selberherr:
"Structural Optimization of MTJs with a Composite Free Layer";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 74 - 75.

1420. D. Osintsev, V. Sverdlov, S. Selberherr:
"Influence of Surface Roughness Scattering on Spin Lifetime in Silicon";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 76 - 77.

1419. P. Schwaha, J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
"The Ultimate Equivalence Between Coherent Quantum and Classical Regimes";
Poster: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 152 - 153.

1418. Z. Stanojevic, O. Baumgartner, K. Schnass, M. Karner, H. Kosina:
"VSP - a Quantum Simulator for Engineering Applications";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 132 - 133.

1417. V. Sverdlov, H. Mahmoudi, A. Makarov, D. Osintsev, J. Weinbub, T. Windbacher, S. Selberherr:
"Modeling Spin-Based Devices in Silicon";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; (invited) 04.06.2013 - 07.06.2013; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 70 - 71.

1416. S. Touski, M. Pourfath, H. Kosina:
"Electronic Transport in Graphene Nanoribbons in the Presence of Substrate Surface Corrugation";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 108 - 109.

1415. T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Switching Optimization of an Electrically Read- and Writable Magnetic Logic Gate";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 238 - 239.

1414. R. Orio, S. Selberherr:
"Physically Based Models of Electromigration";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; (invited) 03.06.2013 - 05.06.2013; in "Proceedings of the International Conference on Electron Devices and Solid-State Circuits (EDSSC)", (2013), Vol.290, 1 - 2.

1413. P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov, R. Georgieva:
"Stochastic Alternative to Newton's Acceleration";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 03.06.2013 - 07.06.2013; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2013), 77 - 78.

1412. J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
"The Role of Annihilation in a Wigner Monte Carlo Approach";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 03.06.2013 - 07.06.2013; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2013), 78.

1411. M. Molnar, V. Palankovski, D. Donoval, J. Kuzmik, J. Kovac, A. Chvala, J. Marek, P. Pribytny, S. Selberherr:
"Modeling and Characterization of InAlN/GaN HEMTs at Elevated Temperatures";
Talk: International Conference on Advances in Electronic and Photonic Technologies, High Tatras, Spa Novy Smokovec, Slovakia; 02.06.2013 - 05.06.2013; in "Proceedings of ADEPT International Conference on Advances in Electronic and Photonic Technologies", (2013), ISBN: 978-80-554-0689-3, 48 - 51.

1410. M. Moradinasab, M. Pourfath, H. Kosina:
"Spin Filtering in Zigzag Graphene Nanoribbons Using 7-5 Defects";
Poster: Graphene Week, Chemnitz, Germany; 02.06.2013 - 07.06.2013; in "Book of Abstracts", (2013), 250.

1409. M. Molnar, V. Palankovski, D. Donoval, J. Kuzmik, J. Kovac, A. Chvala, J. Marek, P. Pribytny, S. Selberherr:
"Characterization of InAlN/GaN HEMTs at Elevated Temperatures Supported by Numerical Simulation";
Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Warnemunde, Germany; 26.05.2013 - 29.05.2013; in "Proceedings of the Workshop on Compound Semiconductor Devices and Integrated Circuits", (2013), ISBN: 978-3-00-041435-0, 135 - 136.

1408. F. Rudolf, K. Rupp, S. Selberherr:
"ViennaMesh - a Highly Flexible Meshing Framework";
Talk: International Congress on Computational Engineering and Sciences (FEMTEC), Las Vegas, USA; 20.05.2013 - 25.05.2013; in "Abstracts 4th International Congress on Computational Engineering and Sciences", (2013), 1 page(s) .

1407. J. Weinbub, K. Rupp, S. Selberherr:
"Increasing Flexibility and Reusability of Finite Element Simulations With ViennaX";
Talk: International Congress on Computational Engineering and Sciences (FEMTEC), Las Vegas, USA; 20.05.2013 - 25.05.2013; in "Abstracts 4th International Congress on Computational Engineering and Sciences", (2013), 1 page(s) .

1406. K. Rupp, B. Smith:
"On Level Scheduling for Incomplete LU Factorization Preconditioners on Accelerators";
Talk: International Congress on Computational Engineering and Sciences (FEMTEC), Las Vegas, USA; 19.05.2013 - 24.05.2013; in "Abstracts 4th International Congress on Computational Engineering and Sciences", (2013), 1.

1405. D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films";
Talk: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Toronto, Canada; 12.05.2013 - 16.05.2013; in "223th ECS Meeting", (2013), Vol.894, ISBN: 978-1-56677-866-4, 1.

1404. K. Rupp, F. Rudolf, J. Weinbub:
"A Discussion of Selected Vienna-Libraries for Computational Science";
Talk: C++Now, Aspen, CO, USA; 12.05.2013 - 17.05.2013; in "Proceedings of C++Now (2013)", (2013), 10 page(s) .

1403. J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, G. Groeseneken, Bened. Schwarz, M. Bina, M. Waltl, P.-J. Wagner, T. Grasser:
"Reduction of the BTI Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2013)", (2013), 1 - 6.

1402. T. Grasser:
"Fundamentals of RTN, BTI, and Hot Carrier Degradation: A Matter of Timescales";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA (Tutorial); (invited) 14.04.2013 - 18.04.2013; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2013)", (2013), 1.

1401. T. Grasser, K. Rott, H. Reisinger, P.-J. Wagner, W. Gös, F. Schanovsky, M. Waltl, M. Toledano-Luque, B. Kaczer:
"Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect Spectroscopy";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2013)", (2013), 1 - 6.

1400. G. Pobegen, M. Nelhiebel, T. Grasser:
"Detrimental impact of hydrogen passivation on NBTI and HC degradation";
Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2013)", (2013), 1 - 6.

1399. A. P. Singulani, H. Ceric, L. Filipovic, E. Langer:
"Impact of Bosch Scallops Dimensions on Stress of an Open Through Silicon Via Technology";
Talk: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Poland; 14.04.2013 - 17.04.2013; in "Proceedings of the IEEE 14th International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EurSimE)", (2013), ISBN: 978-1-4673-6137-8, 6 page(s) doi:10.1109/EuroSimE.2013.6529938.

1398. A. P. Singulani, H. Ceric, E. Langer, S. Carniello:
"Effects of Bosch scallops on metal layer stress of an open Through Silicon Via technology";
Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2013)", (2013), ISBN: 978-1-4799-0112-8, CP.2.1 - CP.2.5 doi:10.1109/IRPS.2013.6532066.

1397. P. Weckx, B. Kaczer, M. Toledano-Luque, T. Grasser, Ph. J. Roussel, H. Kukner, P. Raghavan, F. Catthoor, G. Groeseneken:
"Defect-based Methodology for Workload-dependent Circuit Lifetime Projections - Application to SRAM";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2013)", (2013), 1 - 7.

1396. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Impact of Device Parameters on the Reliability of the Magnetic Tunnel Junction Based Implication Logic Gates";
Poster: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; 08.04.2013 - 11.04.2013; in "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4, 68 - 69.

1395. D. Osintsev, V. Sverdlov, S. Selberherr:
"Shear Strain: An Efficient Spin Lifetime Booster in Advanced UTB2 SOI MOSFETs";
Talk: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; 08.04.2013 - 11.04.2013; in "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4, 64 - 65.

1394. V. Sverdlov, S. Selberherr:
"Silicon Spintronics and its Applications";
Talk: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; (invited) 08.04.2013 - 11.04.2013; in "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4, 51 - 52.

1393. M. Schrems, C. Schrank, J. Siegert, J. Kraft, J. Teva, S. Selberherr:
"Metrology Requirements for Manufacturing 3D Integrated ICs";
Talk: International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN), Gaithersburg, USA; (invited) 25.03.2013 - 28.03.2013; in "Proceedings International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN)", (2013), 137 - 139.

1392. D. Osintsev, V. Sverdlov, S. Selberherr:
"Influence of the valley degeneracy on spin relaxation in thin silicon films";
Poster: International Conference on Ultimate Integration of Silicon (ULIS), University of Warwick, UK; 19.03.2013 - 21.03.2013; in "The 14th Edition of the `International Conference on Ultimate Integration on Silicon´ (ULIS 2013)", (2013), ISBN: 978-1-4673-4802-7, 221 - 224 doi:10.1109/ULIS.2013.6523525.

1391. N. Neophytou, H. Kosina:
"Thermoelectric Power Factor Engineering of Low-Dimensional and Nanocomposite Si Nanostructures";
Talk: APS March Meeting, Baltimore, Maryland, USA; 18.03.2013 - 22.03.2013; in "Bulletin American Physical Society (APS March Meeting)", (2013), 1 page(s) .

1390. D. Osintsev, V. Sverdlov, S. Selberherr:
"Enhanced intervalley splitting and reduced spin relaxation in strained thin silicon films";
Talk: APS March Meeting, Baltimore, Maryland, USA; 18.03.2013 - 22.03.2013; in "Bulletin American Physical Society (APS March Meeting)", (2013), 1 page(s) .

1389. D. Osintsev, V. Sverdlov, S. Selberherr:
"Reduction of the Surface Roughness Induced Spin Relaxation in SOI Structures: An Analytical Approach";
Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Paris, France; 21.01.2013 - 23.01.2013; in "Conference Proceedings of the Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2013), Vol.46, 1 page(s) .

1388. M. Bina, K. Rupp, S. E. Tyaginov, O. Triebl, T. Grasser:
"Modeling of Hot Carrier Degradation Using a Spherical Harmonics Expansion of the Bipolar Boltzmann Transport Equation";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 10.12.2012 - 12.12.2012; in "2012 International Electron Devices Meeting (IEDM) Technical Digest", (2012), 713 - 716 doi:10.1109/IEDM.2012.6479138.

1387. T. Grasser, H. Reisinger, K. Rott, M. Toledano-Luque, B. Kaczer:
"On the Microscopic Origin of the Frequency Dependence of Hole Trapping in pMOSFETs";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 10.12.2012 - 12.12.2012; in "2012 International Electron Devices Meeting (IEDM) Technical Digest", (2012), 470 - 473 doi:10.1109/IEDM.2012.6479076.

1386. A. P. Singulani, H. Ceric, S. Selberherr:
"Thermo-mechanical Simulations of an Open Tungsten TSV";
Talk: IEEE Electronics Packaging Technology Conference (EPTC), Singapore; 05.12.2012 - 07.12.2012; in "Proceedings of the IEEE 14th Electronics Packaging Technology Conference (EPTC)", (2012), ISBN: 978-1-4673-4551-4, 110 - 114 doi:10.1109/EPTC.2012.6507061.

1385. A. Makarov, V. Sverdlov, S. Selberherr:
"Geometry Dependence of the Switching Time in MTJs with a Composite Free Layer";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 02.12.2012 - 07.12.2012; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2012), ISBN: 978-3-901578-25-0, 21.

1384. D. Osintsev, V. Sverdlov, S. Selberherr:
"Surface Roughness Induced Reduction of Spin Relaxation in Thin Silicon Films";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 02.12.2012 - 07.12.2012; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2012), ISBN: 978-3-901578-25-0, 33.

1383. M. Molnar, G. Donnarumma, V. Palankovski, J. Kuzmik, D. Donoval, J. Kovac, S. Selberherr:
"Electrothermal Analysis of In0.12Al0.88N/GaN HEMTs";
Talk: International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), Smolenice, Slovakia; 11.11.2012 - 15.11.2012; in "Proceedings of the 9th International ASDAM", (2012), ISBN: 978-1-4673-1195-3, 55 - 58 doi:10.1109/ASDAM.2012.6418556.

1382. T. Grasser, B. Kaczer, H. Reisinger, P.-J. Wagner, M. Toledano-Luque:
"Modeling of the bias temperature instability under dynamic stress and recovery conditions";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Xi'an, China; (invited) 29.10.2012 - 01.11.2012; in "11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2012), ISBN: 978-1-4673-2474-8, 1 - 4 doi:10.1109/ICSICT.2012.6466737.

1381. R. Orio, S. Selberherr:
"Formation and Movement of Voids in Copper Interconnect Structures";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Xi'an, China; (invited) 29.10.2012 - 01.11.2012; in "Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2012), ISBN: 978-1-4673-2475-5, 378 - 381 doi:10.1109/ICSICT.2012.6467675.

1380. H. Kosina, N. Neophytou:
"Low Dimensional Nanostructures as Efficient Thermoelectric Materials for Energy Conversion and Generation";
Talk: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China; (invited) 26.10.2012 - 28.10.2012; in "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), 419.

1379. N. Neophytou, H. Kosina:
"Atomistic Simulations of the Electronic Properties of Si and Ge Nanowires and Thin-Layers: Bandstructure Effects";
Talk: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China; (invited) 26.10.2012 - 28.10.2012; in "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), 488.

1378. V. Sverdlov, A. Makarov, S. Selberherr:
"Fast Switching in MTJs with a Composite Free Layer";
Talk: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China; 26.10.2012 - 28.10.2012; in "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), 291.

1377. M. Jurkovic, D. Gregusova, S. Hascik, M. Blaho, K. Cico, V. Palankovski, J. Carlin, N. Grandjean, J. Kuzmik:
"Polarization Engineered Normally-Off GaN/InlN/AlN/GaN HEMT";
Talk: International Workshop on Nitride Semiconductors 2012 (INW), Sapporo, Japan; 14.10.2012 - 19.10.2012; in "International Workshop on Nitride Semiconductors", (2012), 2 page(s) .

1376. G. Pobegen, M. Nelhiebel, T. Grasser:
"Recent Results Concerning the Influence of Hydrogen on the Bias Temperature Instability";
Talk: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in "2012 IEEE International Integrated Reliability Workshop Final Report", (2012), 54 - 59.

1375. K. Rott, D. Schmitt-Landsiedel, H. Reisinger, G.A. Rott, G. Georgakos, C. Schluender, S. Aresu, W. Gustin, T. Grasser:
"Impact and measurement of short term threshold instabilities in MOSFETs of analog circuits";
Talk: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 31 - 34.

1374. S. E. Tyaginov, T. Grasser:
"Modeling of Hot-Carrier Degradation: Physics and Controversial Issues";
Talk: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 206 - 215.

1373. P.-J. Wagner, B. Kaczer, A. Scholten, H. Reisinger, S. Bychikhin, D. Pogany, L.K.J. Vandamme, T. Grasser:
"On the Correlation Between NBTI, SILC, and Flicker Noise";
Talk: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 60 - 64.

1372. M. Waltl, P.-J. Wagner, H. Reisinger, K. Rott, T. Grasser:
"Advanced Data Analysis Algorithms for the Time-Dependent Defect Spectroscopy of NBTI";
Talk: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 74 - 79.

1371. J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, G. Eneman, Ph. J. Roussel, M. Cho, T. Kauerauf, T. Grasser, L. Witters, G. Hellings, L. Ragnarsson, N. Horiguchi, M. Heyns, G. Groeseneken:
"Reliability of SiGe Channel MOS";
Talk: Honolulu PRiME 2012, Honolulu, USA; 07.10.2012 - 12.10.2012; in "ECS Meeting Abstracts", (2012), Vol.MA2012-02, 1 page(s) .

1370. H. Karamitaheri, M. Pourfath, N. Neophytou, H. Kosina:
"Theoretical Study of a Zigzag Graphene Nanoribbon Field Effect Transistor";
Talk: Meeting of the Electrochemical Society (ECS), Honolulu, USA; 07.10.2012 - 12.10.2012; in "ECS Meeting", (2012), 1 page(s) .

1369. V. Palankovski, J. Kuzmik:
"A Promising New n++-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications";
Talk: Honolulu PRiME 2012, Honolulu, USA; 07.10.2012 - 12.10.2012; in "ECS Meeting Abstracts", (2012), Vol.MA2012-02, 1 page(s) .

1368. V. Palankovski, J. Kuzmik:
"Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation";
Talk: Honolulu PRiME 2012, Honolulu, USA; 07.10.2012 - 12.10.2012; in "ECS Meeting Abstracts", (2012), Vol.MA2012-02, 1 page(s) .

1367. T. Windbacher, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Fully Electrically Read- Write Magneto Logic Gates";
Talk: The 5th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMS, Crete, Greece; 07.10.2012 - 10.10.2012; in "Book of Abstracts", (2012), 1 page(s) .

1366. R. Orio, H. Ceric, S. Selberherr:
"Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via";
Poster: 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Cagliari, Italy; 01.10.2012 - 05.10.2012; in "Proceedings of the 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2012), 1981 - 1986.

1365. A. Makarov, V. Sverdlov, S. Selberherr:
"High Thermal Stability and Low Switching Energy Barrier in Spin-transfer Torque RAM with Composite Free Layer";
Poster: International Conference on Solid State Devices and Materials, Kyoto, Japan; 25.09.2012 - 27.09.2012; in "Extended Abstracts of 2012 International Conference on Solid State Devices and Materials", (2012), 2 page(s) .

1364. D. Osintsev, V. Sverdlov, S. Selberherr:
"Modeling Spintronic Effects in Silicon";
Talk: International Workshop on Mathematics for Semiconductor Heterostructures (MSH), Berlin, Germany; (invited) 24.09.2012 - 28.09.2012; in "Abstracts International Workshop on Mathematics for Semiconductor Heterostructures (MSH)", (2012), 3 page(s) .

1363. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors";
Talk: 24th European Modeling and Simulation Symposium (EMSS2012), Vienna, Austria; 19.09.2012 - 21.09.2012; in "Proceedings of the 24th European Modeling and Simulation Symposium", (2012), ISBN: 978-88-97999-01-0, 156 - 162.

1362. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"MTJ-based Implication Logic Gates and Circuit Architecture for Large-Scale Spintronic Stateful Logic Systems";
Talk: European Solid-State Device Research Conference (ESSDERC), Bordeaux, France; 17.09.2012 - 21.09.2012; in "Proceedings of the 42th European Solid-State Device Research Conference (ESSDERC)", (2012), ISBN: 978-1-4673-3086-2, 254 - 257 doi:10.1109/ESSDERC.2012.6343381.

1361. A. Starkov, I. Baranov, O. Pakhomov, I. Starkov, A. Zaitsev:
"Principles of Solid-State Cooler on Layered Multiferroics";
Poster: 5th IIR/IIF International Conference on Magnetic Refrigeration at Room Temperature (THERMAG V), Grenoble, France; 17.09.2012 - 20.09.2012; in "Conference guide & book of abstracts", (2012), 1 page(s) .

1360. M. Bina, O. Triebl, Bened. Schwarz, M. Karner, B. Kaczer, T. Grasser:
"Simulation of Reliability on Nanoscale Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 109 - 112.

1359. H. Ceric, R. Orio, S. Selberherr:
"TCAD Study of Electromigration Failure Modes in Sn-Based Solder Bumps";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 264 - 267.

1358. G. Donnarumma, V. Palankovski, S. Selberherr:
"Influence of Bandgap Narrowing and Carrier Lifetimes on the Forward Current-Voltage Characteristics of a 4H-SiC p-i-n Diode";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 125 - 128.

1357. L. Filipovic, S. Selberherr:
"Simulations of Local Oxidation Nanolithography by AFM Based on the Generated Electric Field";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 189 - 192.

1356. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"A Robust and Efficient MTJ-based Spintronic IMP Gate for New Logic Circuits and Large-Scale Integration";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 225 - 228.

1355. A. Makarov, V. Sverdlov, S. Selberherr:
"Study of Self-Accelerating Switching in MTJs with Composite Free Layer by Micromagnetic Simulations";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 229 - 232.

1354. R. Orio, H. Ceric, S. Selberherr:
"Modeling of Electromigration Induced Resistance Change in Three-Dimensional Interconnects with Through Silicon Vias";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 268 - 271.

1353. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 153 - 156.

1352. K. Rupp, C. Jungemann, M. Bina, A. Jüngel, T. Grasser:
"Bipolar Spherical Harmonics Expansions of the Boltzmann Transport Equation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 19 - 22.

1351. J. Weinbub, K. Rupp, S. Selberherr:
"A Flexible Execution Framework for High-Performance TCAD Applications";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 400 - 403.

1350. Z. Stanojevic, O. Baumgartner, H. Kosina:
"A stable discretization method for "Dirac-like" effective Hamiltonians";
Poster: International Quantum Cascade Lasers School & Workshop 2012 (IQCLSW 2012), Baden near Vienna, Austria; 02.09.2012 - 06.09.2012; in "Proc. International Quantum Cascade Lasers School & Workshop", (2012), 127.

1349. L. Filipovic, S. Selberherr:
"Electric Field Based Simulations of Local Oxidation Nanolithography using Atomic Force Microscopy in a Level Set Environment";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil; 30.08.2012 - 02.09.2012; in "ECS Transactions", (2012), Vol.1, ISBN: 978-1-56677-990-6, 265 - 272 doi:10.1149/04901.0265ecst.

1348. R. Orio, H. Ceric, S. Selberherr:
"Analysis of Resistance Change Development due to Voiding in Copper Interconnects ended by a Through Silicon Via";
Talk: International Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil; 30.08.2012 - 02.09.2012; in "ECS Transactions", (2012), Vol.1, ISBN: 978-1-56677-990-6, 273 - 280 doi:10.1149/04901.0273ecst.

1347. A. Starkov, O. Pakhomov, I. Starkov:
"Account for Mutual Influence of Electrical, Elastic and Thermal Phenomena for Ferroelectric Domain Wall Modeling";
Poster: 11th International Symposium on Ferroic Domains and Micro- to Nanoscopic Structures (ISFD), Ekaterinburg, Russia; 20.08.2012 - 24.08.2012; in "Abstract Book", (2012), 238.

1346. A. Starkov, I. Starkov:
"Domain-Wall Motion for Slowly Varying Electric Field";
Talk: 11th International Symposium on Ferroic Domains and Micro- to Nanoscopic Structures (ISFD), Ekaterinburg, Russia; 20.08.2012 - 24.08.2012; in "Abstract Book", (2012), 93.

1345. I. Serrano-Lopez, A. Garcia-Barrientos, V. Palankovski, L. del Carmen Cruz-Netro:
"Non-Stationary Effects of Space Charge in InN Films";
Talk: International Materials Research Congress, Cancun, Mexico; 12.08.2012 - 17.08.2012; in "XXI International Materials Research Congress", (2012), 1 page(s) .

1344. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Spintronic Stateful Logic Gates using Magnetic Tunnel Junctions Written by Spin-Transfer Torque";
Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 05.08.2012 - 08.08.2012; in "Book of Abstracts", (2012), P-6.

1343. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Valley Splitting and Spin Relaxation in Strained Silicon Quantum Wells";
Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 05.08.2012 - 08.08.2012; in "Book of Abstracts", (2012), P-27.

1342. D. Osintsev, Z. Stanojevic, O. Baumgartner, V. Sverdlov, S. Selberherr:
"Strain-Induced Reduction of Surface Roughness Dominated Spin Relaxation in MOSFETs";
Poster: International Conference on Physics of Semiconductor (ICPS), Zurich, Switzerland; 29.07.2012 - 03.08.2012; in "31st International Conference on the Physics of Semiconductors (ICPS 2012)", (2012), Vol.1566, ISBN: 978-0-7354-1194-4, 1 page(s) doi:10.1063/1.4848413.

1341. A. Makarov, V. Sverdlov, S. Selberherr:
"STT-RAM with a Composite Free Layer: High Thermal Stability, Low Switching Barrier, and Sharp Switching Time Distribution";
Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 23.07.2012 - 25.07.2012; in "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), H4.

1340. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Surface Roughness Induced Spin Scattering and Relaxation in Silicon SOI MOSFETs";
Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 23.07.2012 - 25.07.2012; in "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), B3.

1339. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Simulations of an Electrical Read-Write Operation of a Magnetic XOR Gate";
Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 23.07.2012 - 25.07.2012; in "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), J3.

1338. V. Sverdlov, S. Selberherr:
"MOSFET and Spin Transistor Simulations";
Talk: 2012 CMOS Emerging Technologies, Vancouver, BC Canada; (invited) 18.07.2012 - 21.07.2012; in "Abstract of 2012 CMOS Emerging Technologies", (2012), 1 page(s) .

1337. A. I. Dedyk, Yu. V. Pavlova, A. Semenov, O. Pakhomov, A. Starkov, I. Starkov, P. Yu. Beliavskiy:
"The Influence of "Heating-Cooling" Process Rate on Temperature Hysteresis of Ferroelectric Capasitor Structures";
Poster: 21st International Symposium on Applications of Ferroelectrics (ISAF), Aveiro, Portugal; 09.07.2012 - 13.07.2012; in "Proceedings of 21st International Symposium on Applications of Ferroelectrics (ISAF)", (2012), ISBN: 978-1-4673-2668-1, 1 page(s) doi:10.1109/ISAF.2012.6297838.

1336. H. Karamitaheri, N. Neophytou, H. Kosina:
"Calculations of Confined Phonon Spectrum in Narrow Si Nanowires using the Valence Force Field Method";
Poster: The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark; 09.07.2012 - 12.07.2012; in "Book of Abstracts", (2012), 1 page(s) .

1335. N. Neophytou, H. Karamitaheri, H. Kosina:
"Engineering the Thermoelectric Power Factor of Si and Ge Ultra Narrow 1D Nanowires and 2D Thin Layers Using Atomistic Modeling";
Talk: The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark; 09.07.2012 - 12.07.2012; in "Book of Abstracts", (2012), 1 page(s) .

1334. A. Starkov, I. Starkov:
"Theoretical Model of SPM-tip Electrostatic Field Accounting for Dead Layer and Domain Wall";
Talk: 21st International Symposium on Applications of Ferroelectrics (ISAF), Aveiro, Portugal; 09.07.2012 - 13.07.2012; in "Proceedings of 21st International Symposium on Applications of Ferroelectrics (ISAF)", (2012), ISBN: 978-1-4673-2668-1, 1 page(s) doi:10.1109/ISAF.2012.6297837.

1333. X. Zianni, N. Neophytou, M. Ferri, A. Roncaglia, D. Narducci:
"Nanograin Effects on the Thermoelectric Properties of Poly-Si Nanowiress";
Talk: The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark; 09.07.2012 - 12.07.2012; in "Book of Abstracts", (2012), 1 page(s) .

1332. J. Weinbub, K. Rupp, S. Selberherr:
"A Generic Multi-Dimensional Run-Time Data Structure for High-Performance Scientific Computing";
Talk: World Congress on Engineering (WCE), London, UK; 04.07.2012 - 06.07.2012; in "Proceedings of the World Congress on Engineering (WCE)", (2012), ISBN: 978-988-19252-1-3, 1076 - 1081.

1331. N. Neophytou, H. Karamitaheri, H. Kosina:
"Atomistic Design of Ultra-Narrow Silicon Nanowires for Improved Electronic and Thermoelectric Applications";
Talk: International Conference on Nanosciences and Nanotechnologies, Thessaloniki, Greece; 03.07.2012 - 06.07.2012; in "Abstract Book", (2012), 46.

1330. H. Ceric, R. Orio, W. H. Zisser, S. Selberherr:
"Ab Initio Method for Electromigration Analysis";
Talk: IEEE Electronics Packaging Technology Conference (EPTC), Singapore; 02.07.2012 - 06.07.2012; in "Proceedings of the 19th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0982-0, 4 page(s) doi:10.1109/IPFA.2012.6306306.

1329. I. Starkov, H. Enichlmair, S. E. Tyaginov, T. Grasser:
"Charge-Pumping Extraction Techniques for Hot-Carrier Induced Interface and Oxide Trap Spatial Distributions in MOSFETs";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 02.07.2012 - 06.07.2012; in "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6, 1 - 6 doi:10.1109/IPFA.2012.6306266.

1328. S. E. Tyaginov, I. Starkov, O. Triebl, M. Karner, C. Kernstock, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser:
"Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 02.07.2012 - 06.07.2012; in "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6, 1 - 5 doi:10.1109/IPFA.2012.6306265.

1327. L. Filipovic, S. Selberherr:
"Simulation of Silicon Nanopatterning Using nc-AFM";
Poster: International Conference on non-contact Atomic Force Microscopy, Cesky Krumlov; 01.07.2012 - 05.07.2012; in "Abstracts 15th International Conference on non-contact Atomic Force Microscopy (nc-AFM)", (2012), 108.

1326. A. Makarov, V. Sverdlov, S. Selberherr:
"Reduction of the Switching Current in Spin Transfer Torque Random Access Memory";
Poster: Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents, Corsica, France; 25.06.2012 - 29.06.2012; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents", (2012), 49.

1325. K. Rupp, T. Grasser, A. Jüngel:
"Recent advances in the spherical harmonics expansion of the Boltzmann transport equation";
Talk: Congresso Nationale Simai 2012, Turin, Italy; 25.06.2012 - 28.06.2012; in "Abstracts of Congresso Nationale Simai 2012", (2012), 183.

1324. A. Semenov, A. I. Dedyk, P. Y. Belavsky, Yu. V. Pavlova, S. Karmanenko, O. Pakhomov, A. Starkov, I. Starkov:
"A Study of Ferroelectric Multilayer Structures Based on BST Films Containing High Concentration of Magnetic Ions";
Poster: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 25.06.2012 - 27.06.2012; in "Abstract Booklet", (2012), 77.

1323. A. Starkov, O. Pakhomov, I. Starkov:
"Thermodynamic Foundations of Solid-State Cooler Based on Multiferroic Materials";
Poster: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 25.06.2012 - 27.06.2012; in "Abstract Booklet", (2012), 76.

1322. I. Starkov, H. Enichlmair, T. Grasser:
"Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in High-Voltage n-MOSFET";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 25.06.2012 - 27.06.2012; in "Abstract Booklet", (2012), 40.

1321. M. Molnar, G. Donnarumma, V. Palankovski, J. Kuzmik, D. Donoval, J. Kovac, S. Selberherr:
"Characterization, Modeling and Simulation of In0.12Al0.88N/GaN HEMTs";
Talk: Applied Physics of Condensed Matter (APCOM), High Tatras, Slovakia; 20.06.2012 - 22.06.2012; in "Proceedings of the 18th International Conference in the Series of the Solid State Workshops", (2012), 190 - 194.

1320. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Novel Memristive Charge- and Flux-Based Sensors";
Talk: The 8th Conference on Ph.D. Research in Microelectronics & Electronics- PRIME 2012, Aachen, Germany; 12.06.2012 - 15.06.2012; in "Proceedings of the 8th Conference on Ph.D. Research in Microelectronics & Electronics", (2012), ISBN: 978-3-8007-3442-9, 4 page(s) .

1319. J. Cervenka, A. Steinmair, J.M. Park, E. Seebacher, T. Grasser:
"TCAD Simulations of Statistical Process Variations for High-Voltage LDMOS Transistors";
Talk: European Workshop on CMOS Variability, Nice, France; 11.06.2012 - 12.06.2012; in "Proceedings of the 3rd European Workshop on CMOS Variability", (2012), ISBN: 978-2-914561-56-3, 4 page(s) .

1318. J. Weinbub:
"A Lightweight Task Graph Scheduler for Distributed High-Performance Scientific Computing";
Talk: Workshop on the State-of-the-Art in Scientific and Parallel Computing (PARA), Helsinki, Finland; 10.06.2012 - 13.06.2012; in "Proceedings of the International Workshop on the State-of-the-Art in Scientific and Parallel Computing", (2012), 1 page(s) .

1317. J. Weinbub:
"Distributed High-Performance Parallel Mesh Generation with ViennaMesh";
Talk: Workshop on the State-of-the-Art in Scientific and Parallel Computing (PARA), Helsinki, Finland; 10.06.2012 - 13.06.2012; in "Proceedings of the International Workshop on the State-of-the-Art in Scientific and Parallel Computing", (2012), 1 page(s) .

1316. H. Ceric, R. Orio, S. Selberherr:
"Atomistic Method for Analysis of Electromigration";
Poster: IEEE International Interconnect Technology Conference, San Jose, USA; 04.06.2012 - 06.06.2012; in "Proceedings of the IEEE International Interconnect Technology Conference", (2012), ISBN: 978-1-4673-1137-3, 3 page(s) .

1315. H. Karamitaheri, M. Pourfath, H. Kosina:
"Highly Sensitive Graphene Antidot Lattice Chemiresitor Sensor";
Poster: Graphene Week, Delft, Netherlands; 04.06.2012 - 08.06.2012; in "Book of Abstracts", (2012), 1 page(s) .

1314. M. Moradinasab, H. Karamitaheri, M. Pourfath, H. Kosina:
"On the Role of Stone-Wales Defects on the Performance of Graphene Nanoribbon Photo Detectors";
Poster: Graphene Week, Delft, Netherlands; 04.06.2012 - 08.06.2012; in "Book of Abstracts", (2012), 1 page(s) .

1313. J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, F. Crupi, G. Eneman, Ph. J. Roussel, T. Grasser, M. Cho, T. Kauerauf, L. Witters, G. Hellings, L. Ragnarsson, N. Horiguchi, M. Heyns, G. Groeseneken:
"Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications";
Talk: IEEE International Conference on IC Design and Technology (ICICDT), Austin, TX, USA; (invited) 30.05.2012 - 01.06.2012; in "Proceedings of IEEE International Conference on IC Design and Technology", (2012), 1 - 4.

1312. M. Jurkovic, D. Gregusova, S. Hascik, M. Blaho, M. Molnar, V. Palankovski, D. Donoval, J. Carlin, N. Grandjean, J. Kuzmik:
"GaN/InAlN/AlN/GaN Normally-Off HEMT with Etched Access Region";
Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France; 30.05.2012 - 01.06.2012; in "Proceedings of the 36th Workshop on Compound Semiconductor Devices and Integrated Circuits", (2012), 2 page(s) .

1311. H. Ceric, R. Orio, W. H. Zisser, V. Schnitzer, S. Selberherr:
"Modeling of Microstructural Effects on Electromigration Failure";
Talk: International Workshop on Stress-Induced Phenomena in Microelectronics, Kyoto, Japan; (invited) 28.05.2012 - 30.05.2012; in "Abstracts of 12th International Workshop on Stress-Induced Phenomena in Microelectronics", (2012), 50 - 51.

1310. H. Karamitaheri, N. Neophytou, M. Pourfath, H. Kosina:
"Engineering the Thermoelectric Power Factor of Metallic Graphene Nanoribbons";
Talk: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 77 - 78.

1309. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"State Drift Optimization of Memristive Stateful IMP Logic Gates";
Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 243 - 244.

1308. A. Makarov, V. Sverdlov, S. Selberherr:
"Micromagnetic Simulations of an MTJ with a Composite Free Layer for High-Speed Spin Transfer Torque RAM";
Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 225 - 226.

1307. M. Moradinasab, H. Nematian, M. Noei, M. Pourfath, M. Fathipour, H. Kosina:
"Edge Roughness Effects on the Optical Properties of Zigzag Graphene Nanoribbons: A First Principles Study";
Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 249 - 250.

1306. M. Nedjalkov, P. Schwaha, S. Selberherr, D.K. Ferry, D. Vasileska, P. Dollfus, D. Querlioz:
"Role of the Physical Scales on the Transport Regime";
Talk: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 47 - 48.

1305. H. Nematian, M. Moradinasab, M. Noei, M. Pourfath, M. Fathipour, H. Kosina:
"A Theoretical Study of BN-Confined Graphene Nanoribbon Based Resonant Tunneling Diodes";
Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 217 - 218.

1304. N. Neophytou, H. Kosina:
"Thermoelectric Power Factor of Ultra-Narrow Silicon Nanowires";
Talk: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; (invited) 22.05.2012 - 25.05.2012; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 67 - 68.

1303. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Reduction of Surface Roughness Induced Spin Relaxation in MOSFETs by Strain";
Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 229 - 230.

1302. K. Rupp, P. Lagger, T. Grasser:
"Inclusion of Carrier-Carrier-Scattering Into Arbitrary-Order Spherical Harmonics Expansions of the Boltzmann Transport Equation";
Talk: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 109 - 110.

1301. P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov:
"Particle-Grid Techniques for Semiclassical and Quantum Transport Simulations";
Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 177 - 178.

1300. J. Weinbub, K. Rupp, L. Filipovic, A. Makarov, S. Selberherr:
"Towards a Free Open Source Process and Device Simulation Framework";
Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 141 - 142.

1299. K. Rupp:
"The High-Level Linear Algebra Library ViennaCL and Its Applications";
Talk: GPU Technology Conference, San Jose, California, USA; 14.05.2012 - 17.05.2012; in "Abstracts of GPU Technology Conference", (2012), 77.

1298. T. Grasser:
"Recent Developments in Understanding the Bias Temperature Instability";
Talk: International Conference on Microelectronics (MIEL), Nis, Serbia; (invited) 13.05.2012 - 16.05.2012; in "Proceedings International Conference on Microelectronics (MIEL)", (2012), ISBN: 978-1-4673-0238-8, 315 - 322.

1297. A. Makarov, V. Sverdlov, S. Selberherr:
"Recent Developments in Advanced Memory Modeling";
Talk: International Conference on Microelectronics (MIEL), Nis, Serbia; (invited) 13.05.2012 - 16.05.2012; in "Proceedings of the 28th International Conference on Microelectronics", (2012), ISBN: 978-1-4673-0235-7, 49 - 52.

1296. J. Weinbub, K. Rupp, S. Selberherr:
"Utilizing Modern Programming Techniques and the Boost Libraries for Scientific Software Development";
Talk: C++Now, Aspen, CO, USA; 13.05.2012 - 18.05.2012; in "Proceedings of C++Now (2012)", (2012), 10 page(s) .

1295. M. Moradinasab, H. Nematian, M. Pourfath, M. Fathipour, H. Kosina:
"Theoretical Study of Single and Bilayer Graphene Nanoribbons Photodetectors";
Talk: Meeting of the Electrochemical Society (ECS), Seattle, Washington, USA; 06.05.2012 - 10.05.2012; in "ECS Meeting", (2012), 1 page(s) .

1294. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Influence of Geometry on Memristive Behavior of the Domain Wall Spintronic Memristors and its Applications for Measurements";
Poster: International Conference on Superconductivity and Magnetism, Istanbul, Turkey; 29.04.2012 - 04.05.2012; in "Proceedings of International Conference on Superconductivity and Magnetism (ICSM 2012)", (2012), 1 page(s) .

1293. A. Makarov, S. Selberherr, V. Sverdlov:
"Emerging Non-Volatile Memories for Ultra-Low Power Applications";
Talk: Informationstagung Mikroelektronik (ME), Vienna, Austria; (invited) 23.04.2012 - 24.04.2012; in "Tagungsband zur Informationstagung Mikroelektronik 12", (2012), ISBN: 978-3-85133-071-7, 21 - 24.

1292. T. Aichinger, P. Lenahan, T. Grasser, G. Pobegen, M. Nelhiebel:
"Evidence for Pb Center-Hydrogen Complexes after Subjecting PMOS Devices to NBTI Stress - a Combined DCIV/SDR Study";
Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2012)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) .

1291. J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, J. Mitard, L. Ragnarsson, L. Witters, T. Chiarella, M. Togo, N. Horiguchi, G. Groeseneken, M. F. Bukhori, T. Grasser, A. Asenov:
"Impact of Single Charged Gate Oxide Defects on the Performance and Scaling of Nanoscaled FETs";
Talk: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2012)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) .

1290. T. Grasser, B. Kaczer, H. Reisinger, P.-J. Wagner, M. Toledano-Luque:
"On the Frequency Dependence of the Bias Temperature Instability";
Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2012)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) .

1289. B. Kaczer, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. F. Bukhori, A. Asenov, Bened. Schwarz, M. Bina, T. Grasser, G. Groeseneken:
"The Relevance of Deeply-Scaled FET Threshold Voltage Shifts for Operation Lifetimes";
Talk: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2012)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) .

1288. F. Schanovsky, T. Grasser:
"On the Microscopic Limit of the Modified Reaction-Diffusion Model for the Negative Bias Temperature Instability";
Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2012)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) .

1287. I. Starkov, H. Enichlmair, S. E. Tyaginov, T. Grasser:
"Analysis of the Threshold Voltage Turn-Around Effect in High-Voltage n-MOSFETs Due to Hot-Carrier Stress";
Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2012)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) .

1286. M. Toledano-Luque, B. Kaczer, E. Simoen, R. Degraeve, J. Franco, Ph. J. Roussel, T. Grasser, G. Groeseneken:
"Correlation of Single Trapping and Detrapping Effects in Drain and Gate Currents of Nanoscaled nFETs and pFETs";
Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2012)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) .

1285. A. Makarov, V. Sverdlov, S. Selberherr:
"Modeling Emerging Non-Volatile Memories: Current Trends and Challenges";
Talk: International Conference on Solid State Devices and Materials Science (SSDMS), Macao, China; 01.04.2012 - 02.04.2012; in "Physics Procedia", (2012), 99 - 104 doi:10.1016/j.phpro.2012.03.056.

1284. M. Lukash, K. Rupp, S. Selberherr:
"Sparse Approximate Inverse Preconditioners for Iterative Solvers on GPUs";
Talk: High Performance Computing Symposium (HPC), Orlando, FL, USA; 26.03.2012 - 29.03.2012; in "HPC '12 Proceedings of the 2012 Symposium on High Performance Computing", (2012), ISBN: 978-1-61839-788-1, 7 page(s) .

1283. Ph. Tillet, K. Rupp, S. Selberherr:
"An Automatic OpenCL Compute Kernel Generator for Basic Linear Algebra Operations";
Talk: High Performance Computing Symposium (HPC), Orlando, FL, USA; 26.03.2012 - 29.03.2012; in "HPC '12 Proceedings of the 2012 Symposium on High Performance Computing", (2012), ISBN: 978-1-61839-788-1, 7 page(s) .

1282. M. Wagner, K. Rupp, J. Weinbub:
"A Comparison of Algebraic Multigrid Preconditioners using Graphics Processing Units and Multi-Core Central Processing Units";
Talk: High Performance Computing Symposium (HPC), Orlando, FL, USA; 26.03.2012 - 29.03.2012; in "HPC '12 Proceedings of the 2012 Symposium on High Performance Computing", (2012), ISBN: 978-1-61839-788-1, 7 page(s) .

1281. A. Makarov, V. Sverdlov, S. Selberherr:
"New Trends in Microelectronics: Towards an Ultimate Memory Concept";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen, Mexico; (invited) 14.03.2012 - 17.03.2012; in "Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems", (2012), ISBN:978-1-4566-1117-6, 2 page(s) doi:10.1109/ICCDCS.2012.6188887.

1280. N. Neophytou, H. Kosina:
"Thermoelectric Properties of Low-Dimensional Si and Ge Based Nanostructures";
Talk: APS March Meeting, Boston, USA; 27.02.2012 - 02.03.2012; in "Bulletin American Physical Society (APS March Meeting 2012)", (2012), 1 page(s) .

1279. V. Sverdlov, A. Makarov, S. Selberherr:
"Switching Energy Barrier and Current Reduction in MTJs with Composite Free Layer";
Talk: APS March Meeting, Boston, USA; 27.02.2012 - 02.03.2012; in "Bulletin American Physical Society (APS March Meeting 2012)", (2012), 1 page(s) .

1278. M. Nedjalkov, P. Schwaha, S. Selberherr, D.K. Ferry:
"Phonon Decoherence in Wigner-Boltzmann Transport";
Poster: International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 12.02.2012 - 17.02.2012; in "Proceedings of International Winterschool on New Developments in Solid State Physics", (2012), 61 - 62.

1277. N. Neophytou, H. Kosina:
"Gate Field Induced Bandstructure and Mobility Variations in p-type Silicon Nanowires";
Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Montpellier, France; 23.01.2012 - 25.01.2012; in "Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2012), 131 - 132.

1276. D. Osintsev, V. Sverdlov, S. Selberherr:
"Using Strain for the Reduction of Surface Roughness Induced Spin Relaxation in Field-Effect Transistors with Thin Silicon Body";
Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Montpellier, France; 23.01.2012 - 25.01.2012; in "Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2012), 77 - 78.

1275. S. Selberherr:
"Giving Silicon a Spin";
Talk: International Conference on Enabling Science and Nanotechnology, Johor Bahru, Malaysia; (invited) 05.01.2012 - 07.01.2012; in "Abstracts International Conference on Enabling Science and Nanotechnology (ESciNano 2012)", (2012), 1 page(s) .

1274. H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
"An Investigation of ZGNR-Based Transistors";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) .

1273. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Domain-Wall Spintronic Memristor for Capacitance and Inductance Sensing";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) .

1272. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Switching Time and Current Reduction Using a Composite Free Layer in Magnetic Tunnel Junctions";
Poster: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) .

1271. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors Operated at Elevated Temperature";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) .

1270. I. Starkov, A. S. Starkov, S. E. Tyaginov, H. Enichlmair, H. Ceric, T. Grasser:
"An Analytical Model for MOSFET Local Oxide Capacitance";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) .

1269. S. Vitanov, J. Kuzmik, V. Palankovski:
"Normally-Off InAlN/GaN HEMTs with n++ GaN Cap Layer: A Simulation Study";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) doi:10.1109/ISDRS.2011.6135161.

1268. J. Franco, B. Kaczer, G. Eneman, Ph. J. Roussel, T. Grasser, J. Mitard, L. Ragnarsson, M. Cho, L. Witters, T. Chiarella, M. Togo, W. Wang, A. Hikavyy, R. Loo, N. Horiguchi, G. Groeseneken:
"Superior NBTI Reliability of SiGe Channel pMOSFETs: Replacement Gate, FinFETs, and Impact of Body Bias";
Talk: International Electron Devices Meeting (IEDM), Washington DC, USA; 05.12.2011 - 07.12.2011; in "2011 International Electron Devices Meeting (IEDM) Technical Digest", (2011), ISBN: 978-1-4577-0505-2, 4 page(s) doi:10.1109/IEDM.2011.6131580.

1267. T. Grasser, P.-J. Wagner, H. Reisinger, T. Aichinger, G. Pobegen, M. Nelhiebel, B. Kaczer:
"Analytic Modeling of the Bias Temperature Instability Using Capture/Emission Time Maps";
Talk: International Electron Devices Meeting (IEDM), Washington DC, USA; 05.12.2011 - 07.12.2011; in "2011 International Electron Devices Meeting (IEDM) Technical Digest", (2011), ISBN: 978-1-4577-0505-2, 4 page(s) doi:10.1109/IEDM.2011.6131624.

1266. H. Karamitaheri, M. Pourfath, N. Neophytou, M. Pazoki, H. Kosina:
"First Principle Study of Ballistic Thermal Conductance of Graphene Antidot Lattices for Thermoelectric Applications";
Talk: Carbon-Based Low Dimensional Materials (Carbomat), Catania, Italy; 05.12.2011 - 07.12.2011; in "Proceedings of the 2nd CARBOMAT Workshop", (2011), ISBN: 978-88-8080-124-5, 19 - 22.

1265. G. Pobegen, T. Aichinger, M. Nelhiebel, T. Grasser:
"Understanding Temperature Acceleration for NBTI";
Talk: International Electron Devices Meeting (IEDM), Washington DC, USA; 05.12.2011 - 07.12.2011; in "2011 International Electron Devices Meeting (IEDM) Technical Digest", (2011), ISBN: 978-1-4577-0505-2, 4 page(s) doi:10.1109/IEDM.2011.6131623.

1264. K. Rupp, T. Grasser, A. Jüngel:
"On the Feasibility of Spherical Harmonics Expansions of the Boltzmann Transport Equation for Three-Dimensional Device Geometries";
Talk: International Electron Devices Meeting (IEDM), Washington DC, USA; 05.12.2011 - 07.12.2011; in "2011 International Electron Devices Meeting (IEDM) Technical Digest", (2011), ISBN: 978-1-4577-0505-2, 4 page(s) doi:10.1109/IEDM.2011.6131667.

1263. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Optimization of the Penta-Layer Magnetic Tunnel Junction for Fast STTRAM Switching";
Talk: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 04.12.2011 - 09.12.2011; in "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN 2011)", (2011), 2 page(s) .

1262. D. Osintsev, A. Makarov, S. Selberherr, V. Sverdlov:
"An InAs-Based Spin Field-Effect Transistor: A Path to Room Temperature Operation";
Talk: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 04.12.2011 - 09.12.2011; in "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN 2011)", (2011), 2 page(s) .

1261. H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
"Transport Gap Engineering in Zigzag Graphene Nanoribbons";
Poster: Trends in Nanotechnology Conference (TNT), Canary Islands, Spain; 21.11.2011 - 25.11.2011; in "Poster Abstracts Book (TNT 2011)", (2011), 2.

1260. A. Makarov, S. Selberherr, V. Sverdlov:
"Modeling of Advanced Memories";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Tianjin, China; (invited) 17.11.2011 - 18.11.2011; in "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2011), ISBN: 978-1-4577-1998-1, 2 page(s) doi:10.1109/EDSSC.2011.6117568.

1259. R. Orio, S. Selberherr:
"Compact Modeling of Interconnect Reliability";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Tianjin, China; (invited) 17.11.2011 - 18.11.2011; in "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2011), ISBN: 978-1-4577-1998-1, 2 page(s) doi:10.1109/EDSSC.2011.6117564.

1258. A. Makarov, V. Sverdlov, D. Osintsev, J. Weinbub, S. Selberherr:
"Modeling of the Advanced Spin Transfer Torque Memory: Macro- and Micromagnetic Simulations";
Talk: The European Simulation and Modelling Conference (ESM), Guimaraes, Portugal; 24.10.2011 - 26.10.2011; in "Proceedings of the 25th European Simulation and Modelling Conference", (2011), ISBN: 978-90-77381-66-3, 177 - 181.

1257. M. Bina, T. Aichinger, G. Pobegen, W. Gös, T. Grasser:
"Modeling of DCIV Recombination Currents Using A Multistate Multiphonon Model";
Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 16.10.2011 - 20.10.2011; in "Final Report of IEEE International Integrated Reliability Workshop (IIRW 2011)", (2011), 27 - 31.

1256. B. Kaczer, M. Toledano-Luque, J. Franco, T. Grasser, Ph. J. Roussel, V. V. A. Camargo, S. Mahato, E. Simoen, F. Catthoor, G.I. Wirth, G. Groeseneken:
"Recent Trends in CMOS Reliability: From Individual Traps to Circuit Simulations";
Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; (invited) 16.10.2011 - 20.10.2011; in "Final Report of IEEE International Integrated Reliability Workshop (IIRW 2011)", (2011), 32.

1255. F. Schanovsky, T. Grasser:
"On the Microscopic Limit of the Reaction-Diffusion Model for the Negative Bias Temperature Instability";
Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 16.10.2011 - 20.10.2011; in "Final Report of IEEE International Integrated Reliability Workshop (IIRW 2011)", (2011), 17 - 21.

1254. R. Southwick III, S. T. Purnell, B. A. Rapp, R. J. Thompson, S. K. Pugmire, B. Kaczer, T. Grasser, B. Knowlton:
"Cryogenic to Room Temperature Effects of NBTI in High-k PMOS Devices";
Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 16.10.2011 - 20.10.2011; in "Final Report of IEEE International Integrated Reliability Workshop (IIRW 2011)", (2011), 12 - 16.

1253. G. Pobegen, T. Aichinger, T. Grasser, M. Nelhiebel:
"Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs";
Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 03.10.2011 - 07.10.2011; in "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2011), 1530 - 1534.

1252. S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser:
"An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation";
Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 03.10.2011 - 07.10.2011; in "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2011), Vol.51, 1525 - 1529.

1251. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer";
Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 28.09.2011 - 30.09.2011; in "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), ISBN: 978-4-86348-200-5, 2 page(s) .

1250. N. Neophytou, H. Kosina:
"Thermoelectric Power Factor of Low Dimensional Silicon Nanowires";
Talk: European Conference on Thermoelectrics, Thessaloniki, Greece; 28.09.2011 - 30.09.2011; in "Conference Proceedings of 9th European Conference on Thermoelectrics", (2011), 4 page(s) .

1249. K. Rupp, A. Jüngel, T. Grasser:
"A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors";
Talk: Facing the Multicore Challenge II, Karlsruhe, Germany; 28.09.2011 - 30.09.2011; in "Proceedings of Facing the Multicore Challenge II", (2011), 11 page(s) .

1248. I. Starkov, H. Ceric:
"Impact of Interface State Density on MOSFET Local Oxide Capacitance Degradation During Hot-Carrier Stress";
Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 28.09.2011 - 30.09.2011; in "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), 90 - 91.

1247. W. Gös, F. Schanovsky, H. Reisinger, B. Kaczer, T. Grasser:
"Bistable Defects as the Cause for NBTI and RTN";
Talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; (invited) 25.09.2011 - 30.09.2011; in "GADEST 2011: Abstract Booklet", (2011), 153.

1246. I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping Measurements";
Talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; 25.09.2011 - 30.09.2011; in "GADEST 2011: Abstract Booklet", (2011), 105 - 106.

1245. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"About the Switching Process in Magnetic Tunnel Junctions with Two Fixed Layers and One Soft Magnetic Layer";
Poster: Soft Magnetic Materials Conference (SMM), Kos, Greece; 18.09.2011 - 22.09.2011; in "Abstracts Book of The 20th International Conference on Soft Magnetic Materials", (2011), ISBN: 978-960-9534-14-7, 444.

1244. S. Vitanov, J. Kuzmik, V. Palankovski:
"Study of the Conduction Properties of the n++ GaN Cap Layer in GaN/InAlN/GaN E-HEMTs";
Talk: International Scientific and Applied Science Conference on Electronics, Sozopol, Bulgaria; 14.09.2011 - 16.09.2011; in "Annual Journal of Electronics", (2011), 113 - 116.

1243. S. E. Tyaginov, I. Starkov, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser:
"Impact of the Carrier Distribution Function on Hot-Carrier Degradation Modeling";
Talk: European Solid-State Device Research Conference (ESSDERC), Helsinki, Finland; 12.09.2011 - 16.09.2011; in "Proceedings of the 41st European Solid-State Device Research Conference", (2011), 151 - 154.

1242. O. Baumgartner, Z. Stanojevic, H. Kosina:
"Efficient Simulation of Quantum Cascade Lasers using the Pauli Master Equation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 91 - 94 doi:10.1109/SISPAD.2011.6035057.

1241. H. Ceric, R. Orio, F. Schanovsky, W. H. Zisser, S. Selberherr:
"Multilevel Simulation for the Investigation of Fast Diffusivity Paths";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 135 - 138 doi:10.1109/SISPAD.2011.6035068.

1240. L. Filipovic, S. Selberherr:
"A Level Set Simulator for Nanooxidation using Non-Contact Atomic Force Microscopy";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 307 - 310 doi:10.1109/SISPAD.2011.6035031.

1239. Ph. Hehenberger, W. Gös, O. Baumgartner, J. Franco, B. Kaczer, T. Grasser:
"Quantum-Mechanical Modeling of NBTI in High-k SiGe MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 11 - 14 doi:10.1109/SISPAD.2011.6035036.

1238. N. Neophytou, H. Kosina:
"Strong Anisotropy and Diameter Effects on the Low-Field Mobility of Silicon Nanowires";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 31 - 34 doi:10.1109/SISPAD.2011.6035042.

1237. R. Orio, H. Ceric, S. Selberherr:
"A Compact Model for Early Electromigration Lifetime Estimation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 23 - 26 doi:10.1109/SISPAD.2011.6035040.

1236. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 59 - 62 doi:10.1109/SISPAD.2011.6035049.

1235. K. Rupp, T. Grasser, A. Jüngel:
"Adaptive Variable-Order Spherical Harmonics Expansion of the Boltzmann Transport Equation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 151 - 155 doi:10.1109/SISPAD.2011.6034964.

1234. K. Rupp, T. Grasser, A. Jüngel:
"Parallel Preconditioning for Spherical Harmonics Expansions of the Boltzmann Transport Equation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 147 - 150 doi:10.1109/SISPAD.2011.6034963.

1233. F. Schanovsky, O. Baumgartner, T. Grasser:
"Multi Scale Modeling of Multi Phonon Hole Capture in the Context of NBTI";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 15 - 18 doi:10.1109/SISPAD.2011.6035038.

1232. Z. Stanojevic, M. Karner, K. Schnass, Ch. Kernstock, O. Baumgartner, H. Kosina:
"A Versatile Finite Volume Simulator for the Analysis of Electronic Properties of Nanostructures";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 143 - 146 doi:10.1109/SISPAD.2011.6035089.

1231. I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann:
"Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of n- and p-channel High-Voltage MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 127 - 130 doi:10.1109/SISPAD.2011.6035066.

1230. S. E. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann:
"Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage n-MOSFET";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 123 - 126 doi:10.1109/SISPAD.2011.6035065.

1229. J. Weinbub, J. Cervenka, K. Rupp, S. Selberherr:
"High-Quality Mesh Generation Based on Orthogonal Software Modules";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 139 - 142 doi:10.1109/SISPAD.2011.6035078.

1228. R. Orio, H. Ceric, S. Selberherr:
"Modeling Electromigration Lifetimes of Copper Interconnects";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 30.08.2011 - 02.09.2011; in "ECS Transactions", (2011), ISBN: 978-1-56677-900-5, 163 - 169 doi:10.1149/1.3615190.

1227. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 30.08.2011 - 02.09.2011; in "ECS Transactions", (2011), ISBN: 978-1-56677-900-5, 155 - 162 doi:10.1149/1.3615189.

1226. O. Baumgartner, Z. Stanojevic, H. Kosina:
"Monte Carlo Simulation of Electron Transport in Quantum Cascade Lasers";
Talk: Seminar on Monte Carlo Methods (MCM), Borovets; 29.08.2011 - 02.09.2011; in "Abstracts IMACS Seminar on Monte Carlo Methods (MCM)", (2011), 21.

1225. L. Filipovic, S. Selberherr:
"A Two-Dimensional Lorentzian Distribution for an Atomic Force Microscopy Simulator";
Talk: Seminar on Monte Carlo Methods (MCM), Borovets; 29.08.2011 - 02.09.2011; in "Abstracts IMACS Seminar on Monte Carlo Methods (MCM)", (2011), 30.

1224. P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov:
"Monte Carlo Investigations of Electron Decoherence due to Phonons";
Talk: Seminar on Monte Carlo Methods (MCM), Borovets; 29.08.2011 - 02.09.2011; in "Abstracts IMACS Seminar on Monte Carlo Methods (MCM)", (2011), 48.

1223. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Modeling of the Switching Process in Multi-Layered Magnetic Tunnel Junctions";
Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 01.08.2011 - 05.08.2011; in "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), 238.

1222. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Ballistic Transport in Spin Field-Effect Transistors Built on Si and InAs";
Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 01.08.2011 - 05.08.2011; in "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), 229.

1221. J. Weinbub, J. Cervenka, K. Rupp, S. Selberherr:
"A Generic High-Quality Meshing Framework";
Talk: Symposium on Trends in Unstructured Mesh Generation (Meshtrends), Minneapolis, USA; 25.07.2011 - 28.07.2011; in "Proceedings of the 11th US National Congress on Computational Mechanics (USNCCM)", (2011), 1 page(s) .

1220. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Micromagnetic Modeling of Penta-Layer Magnetic Tunnel Junctions with a Composite Soft Layer";
Talk: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 17.07.2011 - 22.07.2011; in "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 page(s) .

1219. N. Neophytou, H. Kosina:
"Thermoelectric Power Factor of Narrow Silicon Nanowires from Atomistic Considerations";
Talk: 30th International Conference on Thermoelectrics, Michigan, USA; 17.07.2011 - 21.07.2011; in "Book of Abstracts", (2011), 1 page(s) .

1218. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Ballistic Transport in Spin Field-Effect Transistors Built on Silicon";
Talk: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 17.07.2011 - 22.07.2011; in "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 page(s) .

1217. H. Ceric, R. Orio, S. Selberherr:
"Integration of Atomistic and Continuum-Level Electromigration Models";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Incheon, South Korea; 04.07.2011 - 07.07.2011; in "IPFA 2011 Proceedings", (2011), ISBN: 978-1-4577-0159-7, 4 page(s) doi:10.1109/IPFA.2011.5992749.

1216. I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser:
"Analysis of Worst-Case Hot-Carrier Conditions for n-type MOSFET";
Talk: 7th Conference on PhD Research in Microelectronics and Electronics (PRIME), Madonna di Campiglio, Italy; 03.07.2011 - 07.07.2011; in "Proceedings of the 7th Conference on PhD Research in Microelectronics and Electronics", (2011), ISBN: 978-1-4244-9136-0, 4 page(s) doi:10.1109/PRIME.2011.5966251.

1215. G. R. Aloise, S. Vitanov, V. Palankovski:
"Temperature Dependence of the Transport Properties of InN";
Talk: Microtherm 2011, Lodz, Poland; 28.06.2011 - 01.07.2011; in "Official Proceedings of Microtherm 2011", (2011), ISBN: 978-83-932197-0-4, 6 page(s) .

1214. H. Ceric, R. Orio, S. Selberherr:
"Interconnect Reliability Dependence on Fast Diffusivity Paths";
Talk: International Conference on Materials for Advanced Technologies (ICMAT), Suntec, Singapore; (invited) 26.06.2011 - 01.07.2011; in "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2011)", (2011), 33.

1213. N. Neophytou, H. Kosina:
"Atomistic Simulations of Electronic and Thermoelectric Transport in Si Nanowires: Influence of Confinement and Orientation";
Talk: Workshop of the Physics and Applications of Semiconducting Nanowires (Nanowires11), Plomarion, Greece; 14.06.2011 - 17.06.2011; in "Conference Proceedings of the Workshop of the Physics and Applications of Semiconducting Nanowires (Nanowires11)", (2011), 1 page(s) .

1212. M. Toledano-Luque, B. Kaczer, J. Franco, Ph. J. Roussel, T. Grasser, T. Y. Hoffmann, G. Groeseneken:
"From Mean Values to Distributions of BTI Lifetime of Deeply Scaled FETs Through Atomistic Understanding of the Degradation";
Talk: Symposium on VLSI Technology, Kyoto, Japan; 14.06.2011 - 16.06.2011; in "2011 Symposium on VLSI Technology Digest of Technical Papers", (2011), ISBN: 978-1-4244-9949-6, 2 page(s) .

1211. G. R. Aloise, S. Vitanov, V. Palankovski:
"Performance Study of Nitride-Based Gunn Diodes";
Talk: Nanotech 2011, Boston, USA; 13.06.2011 - 16.06.2011; in "Technical Proceedings of the 2011 NSTI Nanotechnology Conference & Expo - Nanotech 2011", (2011), ISBN: 978-1-4398-7139-3, 4 page(s) .

1210. W. Gös, F. Schanovsky, T. Grasser, H. Reisinger, B. Kaczer:
"Advanced Modeling of Oxide Defects for Random Telegraph Noise";
Talk: International Conference on Noise and Fluctuations (ICNF), Toronto, Canada; 12.06.2011 - 16.06.2011; in "Proceedings of the 21st International Conference on Noise and Fluctuations", (2011), 4 page(s) .

1209. L. Filipovic, M. Nedjalkov, S. Selberherr:
"A Monte Carlo Simulator for Non-Contact Atomic Force Microscopy";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2011 - 10.06.2011; in "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), 42 - 43.

1208. D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Transport Modeling in Spin Field-Effect Transistors Built on Silicon Fins";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2011 - 10.06.2011; in "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), 64.

1207. P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov:
"Phonon-Induced Decoherence in Electron Evolution";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2011 - 10.06.2011; in "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), 74 - 75.

1206. J. Weinbub, K. Rupp, S. Selberherr:
"Distributed Heterogenous High-Performance Computing with ViennaCL";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2011 - 10.06.2011; in "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), 88 - 90.

1205. C. Poschalko, S. Selberherr:
"Influence of the PCB Dielectric Material on the Coupling of PCB Traces to Enclosure Cavities";
Talk: Asia-Pacific International Symposium on Electromagnetic Compatibility, Jeju, Korea; 16.05.2011 - 19.05.2011; in "Proceedings of Asia-Pacific International Symposium on Electromagnetic Compatibility", (2011), 4 page(s) .

1204. L. Filipovic, H. Ceric, J. Cervenka, S. Selberherr:
"A Simulator for Local Anodic Oxidation of Silicon Surfaces";
Talk: IEEE Canadian Conference on Electrical and Computer Engineering (CCECE), Niagara Falls, Canada; 08.05.2011 - 11.05.2011; in "Proceedings of the 24th Canadian Conference on Electrical and Computer Engineering (CCECE 2011)", (2011), ISBN: 978-1-4244-9789-8, 695 - 698 doi:10.1109/CCECE.2011.6030543.

1203. H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
"An Investigation of the Geometrical Effects on the Thermal Conductivity of Graphene Antidot Lattices";
Talk: 219th ECS Meeting, Montreal, Canada; 01.05.2011 - 06.05.2011; in "219th ECS Meeting", (2011), 1 page(s) .

1202. Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Subband Structure Engineering in Silicon-on-Insulator FinFETs using Confinement";
Poster: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Montreal; 01.05.2011 - 06.05.2011; in "219th ECS Meeting", (2011), Vol.Vol.35, No.5, ISBN: 978-1-56677-866-4, 117 - 122 doi:10.1149/1.3570785.

1201. S. E. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser:
"Physics-Based Hot-Carrier Degradation Modeling";
Talk: 219th ECS Meeting, Montreal, Canada; (invited) 01.05.2011 - 06.05.2011; in "Meet. Abstr. - Electrochem. Soc. 2011", (2011)", (2011), 1 page(s) .

1200. H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
"Hydrogen-Passivated Graphene Antidot Structures for Thermoelectric Applications";
Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria; 18.04.2011 - 20.04.2011; in "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", (2011), ISBN: 978-1-4577-0105-4, 4 page(s) doi:10.1109/ESIME.2011.5765811.

1199. N. Manavizadeh, M. Pourfath, F. Raissi, E. Asl-Soleimani:
"A Comprehensive Study of Nanoscale Field Effect Diodes";
Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria; 18.04.2011 - 20.04.2011; in "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", (2011), ISBN: 978-1-4577-0105-4, 4 page(s) doi:10.1109/ESIME.2011.5765817.

1198. A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina:
"Compact Model for the Electronic Properties of Edge-Disordered Graphene Nanoribbons";
Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria; 18.04.2011 - 20.04.2011; in "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", (2011), ISBN: 978-1-4577-0105-4, 4 page(s) doi:10.1109/ESIME.2011.5765816.

1197. H. Kosina:
"Semiconductor Device Modeling: The Last 30 Years";
Talk: GMe Forum 2011, Vienna, Austria; (invited) 14.04.2011 - 15.04.2011; in "Abstracts of the Invited Presentations", (2011), 9.

1196. J. Franco, B. Kaczer, G. Eneman, Ph. J. Roussel, M. Cho, J. Mitard, L. Witters, T. Y. Hoffmann, G. Groeseneken, F. Crupi, T. Grasser:
"On the Recoverable and Permanent Components of Hot Carrier and NBTI in Si pMOSFETs and their Implications in Si0.45Ge0.55 pMOSFETs";
Talk: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2011)", (2011), 6 page(s) doi:10.1109/IRPS.2011.5784545.

1195. T. Grasser, T. Aichinger, G. Pobegen, H. Reisinger, P.-J. Wagner, J. Franco, M. Nelhiebel, B. Kaczer:
"The `Permanent´ Component of NBTI: Composition and Annealing";
Talk: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2011)", (2011), 9 page(s) .

1194. B. Kaczer, S. Mahato, V. Valduga de Almeida Camargo, M. Toledano-Luque, Ph. J. Roussel, T. Grasser, F. Catthoor, P. Dobrovolny, P. Zuber, G.I. Wirth, G. Groeseneken:
"Atomistic Approach to Variability of Bias-Temperature Instability in Circuit Simulations";
Poster: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2011)", (2011), 5 page(s) .

1193. H. Reisinger, T. Grasser, K. Ermisch, H. Nielen, W. Gustin, C. Schlünder:
"Understanding and Modeling AC BTI";
Talk: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2011)", (2011), 8 page(s) .

1192. M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, T. Grasser, G.I. Wirth, J. Franco, C. Vrancken, N. Horiguchi, G. Groeseneken:
"Response of a Single Trap to AC Negative Bias Temperature Stress";
Talk: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2011)", (2011), 8 page(s) .

1191. T. Grasser:
"Charge Trapping in Oxides From RTN to BTI";
Talk: International Reliability Physics Symposium (IRPS), Monterey (Tutorial); 10.04.2011 - 14.04.2011; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2011)", (2011), 128 page(s) .

1190. A. Makarov, V. Sverdlov, D. Kryzhanovsky, M. Girkin, S. Selberherr:
"Modeling of Non-Volatile Memory Cells of RRAM Type on High Performance Computer Systems with the Monte-Carlo Method";
Poster: Parallel Computing Technologies (PaVT), Moscow, Russia; 28.03.2011 - 01.04.2011; in "Book of Abstracts: Parallel Computing Technologies (PaVT)", (2011), 1 page(s) .

1189. N. Neophytou, H. Kosina:
"Thermoelectric Properties of Ultra Narrow Silicon Nanowires from Atomistic Calculations";
Talk: APS March Meeting, Dallas, Texas; 21.03.2011 - 25.03.2011; in "APS March Meeting 2011", (2011), 1 page(s) .

1188. D. Osintsev, V. Sverdlov, Z. Stanojevic, S. Selberherr:
"Ballistic Spin Field Effect Transistor Based on Silicon Nanowires";
Talk: APS March Meeting, Dallas, Texas, USA; 21.03.2011 - 25.03.2011; in "Bulletin American Physical Society (APS March Meeting 2011)", (2011), .

1187. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
"Transport Properties of Spin Field-Effect Transistors Built on Si and InAs";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Cork, Ireland; 14.03.2011 - 16.03.2011; in "Proceedings of the 12th International Conference on Ultimate Integration on Silicon (ULIS)", (2011), ISBN: 978-1-4577-0090-3, 210 - 213 doi:10.1109/ULIS.2011.5757998.

1186. L. Filipovic, O. Ertl, S. Selberherr:
"Parallelization Strategy for Hierarchical Run Length Encoded Data Structures";
Talk: IASTED International Conference on Parallel and Distributed Computing and Networks (PDCN 2011), Innsbruck; 15.02.2011 - 17.02.2011; in "Proceedings of the IASTED International Conference on Parallel and Distributed Computing and Networks (PDCN 2011)", (2011), ISBN: 978-0-88986-864-9, 131 - 138 doi:10.2316/P.2011.719-045.

1185. N. Neophytou, H. Kosina:
"Confinement-Induced Mobility Increase in p-type [110] and [111] Silicon Nanowires";
Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada, Spain; 17.01.2011 - 19.01.2011; in "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon On Insulator Thechnology, Devices and Circuits (EUROSOI)", (2011), 2 page(s) .

1184. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
"Ballistic Spin Field-Effect Transistors Built on Silicon Fins";
Poster: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada, Spain; 17.01.2011 - 19.01.2011; in "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), 59 - 60.

1183. Z. Stanojevic, V. Sverdlov, O. Baumgartner, H. Kosina:
"Subband Engineering in n-Type Silicon Nanowires using Strain and Confinement";
Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada, Spain; 17.01.2011 - 19.01.2011; in "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), 99 - 100.

1182. J. Franco, B. Kaczer, G. Eneman, J. Mitard, A. Stesmans, V. Afanas´Ev, T. Kauerauf, Ph. J. Roussel, M. Toledano-Luque, M. Cho, R. Degraeve, T. Grasser, L. Ragnarsson, L. Witters, J. Tseng, S. Takeoka, W. Wang, T. Y. Hoffmann, G. Groeseneken:
"6Å EOT Si45Ge55 pMOSFET with Optimized Reliability (VDD=1V): Meeting the NBTI Lifetime Target at Ultra-Thin EOT";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 06.12.2010 - 08.12.2010; in "2010 International Electron Devices Meeting (IEDM) Technical Digest", (2010), 70 - 73 doi:10.1109/IEDM.2010.5703292.

1181. T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, Ph. J. Roussel, M. Nelhiebel:
"Recent Advances in Understanding the Bias Temperature Instability";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; (invited) 06.12.2010 - 08.12.2010; in "2010 International Electron Devices Meeting (IEDM) Technical Digest", (2010), 82 - 85 doi:10.1109/IEDM.2010.5703295.

1180. V. Sverdlov, S. Selberherr:
"Strain Engineering Techniques: A Rigorous Physical Review";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 05.12.2010 - 10.12.2010; in "Abstracts of the Workshop on Innovative Devices and Systems (WINDS)", (2010), TH-05.

1179. V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr:
"Spin-Driven Silicon Devices Utilizing Enhanced Valley Splitting";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 05.12.2010 - 10.12.2010; in "Abstracts of the Workshop on Innovative Devices and Systems (WINDS)", (2010), TH-06.

1178. H. Kosina:
"Quantum Cascade Laser Modeling based on the Pauli Master Equation";
Talk: Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS, Wien; (invited) 03.11.2010 - 05.11.2010; in "Proceedings of the Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS", (2010), 6.

1177. K. Rupp:
"Deterministic Numerical Solution of the Boltzmann Transport Equation";
Talk: Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS, Wien, Austria; (invited) 03.11.2010 - 05.11.2010; in "Proceedings of the Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS", (2010), 7 - 8.

1176. M. Pourfath, V. Sverdlov, S. Selberherr:
"Transport Modeling for Nanoscale Semiconductor Devices";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Shanghai; (invited) 01.11.2010 - 04.11.2010; in "Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2010), Vol.4, ISBN: 978-1-4244-5799-1, 1737 - 1740.

1175. V. Sverdlov, S. Selberherr:
"Modeling of Modern MOSFETs with Strain";
Talk: International Workshop on Semiconductor Devices Modeling and Electronic Materials, La Plata, Buenos Aires, Argentina; (invited) 01.11.2010 - 03.11.2010; in "Proceedings of the 1st International Workshop on Semiconductor Devices Modeling and Electronic (SDMEM2010)", (2010), ISBN: 978-950-34-0794-3, 1 - 11.

1174. A. Makarov, V. Sverdlov, S. Selberherr:
"A Monte Carlo Simulation of Reproducible Hysteresis in RRAM";
Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in "Proceedings of the 14th International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 35 - 38 doi:10.1109/IWCE.2010.5677934.

1173. N. Neophytou, G. Klimeck, H. Kosina:
"A Comprehensive Atomistic Analysis of Bandstructure Velocities in Si Nanowires";
Poster: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in "Proceedings of the 14th International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 93 - 96 doi:10.1109/IWCE.2010.5678007.

1172. M. Pourfath, A. Yazdanpanah Goharrizi, M. Fathipour, H. Kosina:
"On the Role of Line-Edge Roughness on the Diffusion and Localization in GNRs";
Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in "Proceedings of the 14th International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 45 - 48 doi:10.1109/IWCE.2010.5677936.

1171. F. Schanovsky, W. Gös, T. Grasser:
"Ab-Initio Calculation of the Vibrational Influence on Hole-Trapping";
Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in "Proceedings of the 14th International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 163 - 166 doi:10.1109/IWCE.2010.5677989.

1170. Z. Stanojevic, O. Baumgartner, V. Sverdlov, H. Kosina:
"Electronic Band Structure Modeling in Strained Si-Nanowires: Two Band k · p Versus Tight Binding";
Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in "Proceedings of the 14th International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 5 - 8 doi:10.1109/IWCE.2010.5677927.

1169. A. Makarov, J. Weinbub, V. Sverdlov, S. Selberherr:
"First-Principles Modeling of Bipolar Resistive Switching in Metal-Oxide Based Memory";
Talk: The European Simulation and Modelling Conference (ESM), Hasselt; 25.10.2010 - 27.10.2010; in "Proceedings of the European Simulation and Modelling Conference (ESM)", (2010), ISBN: 978-90-77381-57-1, 181 - 186.

1168. J. Weinbub, R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr:
"A Lightweight Material Library for Scientific Computing in C++";
Talk: The European Simulation and Modelling Conference (ESM), Hasselt; 25.10.2010 - 27.10.2010; in "Proceedings of the European Simulation and Modelling Conference (ESM)", (2010), ISBN: 978-90-77381-57-1, 454 - 458.

1167. M. F. Bukhori, T. Grasser, B. Kaczer, H. Reisinger, A. Asenov:
"'Atomistic' Simulation of RTS Amplitudes Due to Single and Multiple Charged Defect States and Their Interactions";
Talk: IEEE International Integrated Reliability Workshop, California; 17.10.2010 - 21.10.2010; in "Final Report of IEEE International Integrated Reliability Workshop", (2010), 76 - 79 doi:10.1109/IIRW.2010.5706490.

1166. T. Grasser, T. Aichinger, H. Reisinger, J. Franco, P.-J. Wagner, M. Nelhiebel, C. Ortolland, B. Kaczer:
"On the 'Permanent' Component of NBTI";
Talk: IEEE International Integrated Reliability Workshop, California; 17.10.2010 - 21.10.2010; in "Final Report of IEEE International Integrated Reliability Workshop", (2010), 2 - 7 doi:10.1109/IIRW.2010.5706472.

1165. Ph. Hehenberger, H. Reisinger, T. Grasser:
"Recovery of Negative and Positive Bias Temperature Stress in pMOSFETs";
Talk: IEEE International Integrated Reliability Workshop, California; 17.10.2010 - 21.10.2010; in "Final Report of IEEE International Integrated Reliability Workshop", (2010), 8 - 11 doi:10.1109/IIRW.2010.5706473.

1164. H. Reisinger, T. Grasser, K. Hofmann, W. Gustin, C. Schlünder:
"The Impact of Recovery on BTI Reliability Assessments";
Talk: IEEE International Integrated Reliability Workshop, California; 17.10.2010 - 21.10.2010; in "Final Report of IEEE International Integrated Reliability Workshop", (2010), 12 - 16 doi:10.1109/IIRW.2010.5706474.

1163. K. Rupp, J. Weinbub, F. Rudolf:
"Automatic Performance Optimization in ViennaCL for GPUs";
Talk: Workshop on Parallel/High-Performance Object-Oriented Scientific Computing, Reno, Nevada, USA; 17.10.2010 - 21.10.2010; in "Proceedings of the 9th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing", (2010), 6 page(s) doi:10.1145/2039312.2039318.

1162. S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Montecassino Abbey and Gaeta; 11.10.2010 - 15.10.2010; in "Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2010), 3 page(s) .

1161. W. Gös, F. Schanovsky, Ph. Hehenberger, P.-J. Wagner, T. Grasser:
"Charge Trapping and the Negative Bias Temperature Instability";
Talk: 218th ECS Meeting, Las Vegas, USA; 10.10.2010 - 15.10.2010; in "Meet. Abstr. - Electrochem. Soc. 2010", (2010), ISBN: 978-1-56677-822-0, 565 page(s) .

1160. H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
"Thermal Properties of Graphene Antidots";
Poster: Nanoelectronics Days 2010, Aachen; 04.10.2010 - 07.10.2010; in "Abstract Book of the Nanoelectronics Days 2010", (2010), 102.

1159. A. Makarov, V. Sverdlov, S. Selberherr:
"Monte Carlo Simulation of Bipolar Resistive Switching Memories";
Talk: Nanoelectronics Days 2010, Aachen; 04.10.2010 - 07.10.2010; in "Proceedings of the Nanoelectronics Days 2010", (2010), 22.

1158. V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr:
"Enhanced Valley Splitting in Silicon Nanowires and Point Contacts";
Poster: Nanoelectronics Days 2010, Aachen, Germany; 04.10.2010 - 07.10.2010; in "Abstract Book of the Nanoelectronics Days 2010", (2010), 118.

1157. N. Neophytou, M. Wagner, H. Kosina:
"Atomistic Analysis of Thermoelectric Properties of Silicon Nanowires";
Talk: 8th European Conference on Thermoelectrics (ECT 2010), Como; 22.09.2010 - 24.09.2010; in "Note-Book of Abstracts", (2010), 30.

1156. S. Vitanov, V. Palankovski:
"Electron Mobility Models for III-Nitrides";
Talk: International Scientific and Applied Science Conference (ET), Sozopol; 22.09.2010 - 24.09.2010; in "Annual Journal of Electronics", (2010), ISSN: 1313-1842, 18 - 21.

1155. P. Gottschling, R. Heinzl, J. Weinbub, N. Kirchner, M. Sauer, A. Klomfass, C. Steinhardt, J. Wensch:
"Generic C++ Implementation of High-Performance BFS-RBF-based Mesh Motion Schemes";
Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in "AIP Conference Proceedings", (2010), Vol.1281, ISBN: 978-0-7354-0834-0, 1631 - 1634.

1154. G. Mach, R. Heinzl, P. Schwaha, F. Stimpfl, J. Weinbub, S. Selberherr:
"A Modular Tool Chain for High Performance CFD Simulations in Intracranial Aneurysms";
Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in "AIP Conference Proceedings", (2010), ISBN: 978-0-7354-0834-0, 1647 - 1650.

1153. P. Schwaha, R. Heinzl:
"Marching Simplices";
Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in "AIP Conference Proceedings", (2010), Vol.1281, ISBN: 978-0-7354-0834-0, 1651 - 1654.

1152. F. Stimpfl, J. Weinbub, R. Heinzl, P. Schwaha, S. Selberherr:
"A Unified Topological Layer for Finite Element Space Discretization";
Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in "AIP Conference Proceedings", (2010), ISBN: 978-0-7354-0834-0, 1655 - 1658.

1151. J. Weinbub, P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr:
"A Dispatched Covariant Type System for Numerical Applications in C++";
Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in "AIP Conference Proceedings", (2010), ISBN: 978-0-7354-0834-0, 1663 - 1666.

1150. J. Cervenka, H. Kosina, S. Selberherr, J. Zhang, N. Hrauda, J. Stangl, G. Bauer, G. Vastola, A. Marzegalli, L. Miglio:
"Strained MOSFETs on Ordered SiGe Dots";
Talk: European Solid-State Device Research Conference (ESSDERC), Sevilla; 14.09.2010 - 16.09.2010; in "Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-1-4244-6660-3, 297 - 300.

1149. A. Makarov, V. Sverdlov, S. Selberherr:
"A Stochastic Model of Bipolar Resistive Switching in Metal-Oxide-Based Memory";
Talk: European Solid-State Device Research Conference (ESSDERC), Sevilla; 14.09.2010 - 16.09.2010; in "Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-1-4244-6660-3, 396 - 399.

1148. S. Vitanov, V. Palankovski, S. Maroldt, R. Quay:
"Non-Linearity of Transconductance and Source-Gate Resistance of HEMTs";
Poster: European Solid-State Device Research Conference (ESSDERC), Sevilla; 14.09.2010 - 16.09.2010; in "Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-84-693-6437-6, 4 page(s) .

1147. S. Vitanov, V. Palankovski, S. Selberherr:
"Hydrodynamic Models for GaN-Based HEMTs";
Poster: European Solid-State Device Research Conference (ESSDERC), Sevilla; 14.09.2010 - 16.09.2010; in "Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-84-693-6437-6, 4 page(s) .

1146. C. Schlünder, H. Reisinger, W. Gustin, T. Grasser:
"A New Physics-Based NBTI Model for DC-and AC-Stress Enabling Accurate Circuit Aging Simulations Considering Recovery";
Talk: 4. GMM/GI/ITG-Fachtagung Zuverlässigkeit und Entwurf (ZuE 2010), Wildbad Kreuth; 13.09.2010 - 15.09.2010; in "GMM- Fachbericht", (2010), Vol.66, 33 - 40.

1145. M. Pourfath, A. Yazdanpanah Goharrizi, H. Kosina:
"The Effect of Line-Edge Roughness on the Electronic Properties of Graphene Nano-Ribbons";
Talk: Ψk - 2010 Conference, Berlin; 12.09.2010 - 16.09.2010; in "Abstract Book", (2010), 419.

1144. F. Schanovsky, W. Gös, T. Grasser:
"Hole Capture into Oxide Defects in MOS Structures from First Principles";
Poster: Ψk - 2010 Conference, Berlin; 12.09.2010 - 16.09.2010; in "Abstract Book", (2010), 435.

1143. K. Rupp, F. Rudolf, J. Weinbub:
"ViennaCL - A High Level Linear Algebra Library for GPUs and Multi-Core CPUs";
Talk: International Workshop on GPUs and Scientific Applications (GPUScA 2010), Vienna; 11.09.2010 in "Proceedings of the International Workshop on GPUs and Scientific Applications (GPUScA 2010)", (2010), 51 - 56.

1142. A. Garcia-Barrientos, V. Palankovski:
"Amplification of Space Charge Waves in n-InP Films";
Talk: 7th International Conference on Electrical Engineering, Computing, Science and Automatic Control (CCE 2010), Chiapas, Mexico; 08.09.2010 - 10.09.2010; in "Proceedings of the 7th International Conference on Electrical Engineering, Computing, Science and Automatic Control (CCE 2010)", (2010), ISBN: 978-1-4244-7314-4, 613 - 616 doi:10.1109/ICEEE.2010.5608605.

1141. H. Ceric, R. Orio, S. Selberherr:
"Impact of Parameter Variability on Electromigration Lifetime Distribution";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 06.09.2010 - 08.09.2010; in "Proceedings of the 15th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2, 217 - 220 doi:10.1109/SISPAD.2010.5604523.

1140. O. Ertl, L. Filipovic, S. Selberherr:
"Three-Dimensional Simulation of Focused Ion Beam Processing Using the Level Set Method";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 06.09.2010 - 08.09.2010; in "Proceedings of the 15th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7700-5, 49 - 52 doi:10.1109/SISPAD.2010.5604573.

1139. A. Makarov, V. Sverdlov, S. Selberherr:
"Stochastic Modeling Hysteresis and Resistive Switching in Bipolar Oxide-Based Memory";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 06.09.2010 - 08.09.2010; in "Proceedings of the 15th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2, 237 - 240 doi:10.1109/SISPAD.2010.5604517.

1138. K. Rupp, T. Grasser, A. Jüngel:
"System Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 06.09.2010 - 08.09.2010; in "Proceedings of the 15th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2, 159 - 162 doi:10.1109/SISPAD.2010.5604542.

1137. G. Milovanovic, O. Baumgartner, H. Kosina:
"Design of a MIR QCL based on Intervalley Electron Transfer: A Monte Carlo Approach";
Poster: 10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), Shanghai; 05.09.2010 - 09.09.2010; in "Proceedings of the 10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices", (2010), 140 - 141.

1136. A. Makarov, V. Sverdlov, S. Selberherr:
"Modelling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations";
Talk: International Conference on Numerical Methods and Applications (NM&A), Borovets; 20.08.2010 - 24.08.2010; in "Abstracts of the International Conference on Numerical Methods and Applications (NM&A)", (2010), B-39.

1135. M. Nedjalkov, S. Selberherr, I. Dimov:
"Stochastic Algorithm for Solving the Wigner-Boltzmann Correction Equation";
Talk: International Conference on Numerical Methods and Applications (NM&A), Borovets; 20.08.2010 - 24.08.2010; in "Abstracts of the International Conference on Numerical Methods and Applications (NM&A)", (2010), B-43.

1134. V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr:
"Confinement-Enhanced Valley Splitting for Spin-Driven Silicon Devices";
Talk: 6th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI), Tokyo; 01.08.2010 - 04.08.2010; in "Proceedings of the 6th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI)", (2010), 273 - 274.

1133. K. Rupp:
"Symbolic Integration at Compile Time in Finite Element Methods";
Talk: International Symposium on Symbolic and Algebraic Computation (ISSAC), Munich; 25.07.2010 - 28.07.2010; in "Proceedings of the 2010 International Symposium on Symbolic and Algebraic Computation", (2010), 347 - 354.

1132. H. Ceric, R. Orio, S. Selberherr:
"Electromigration Anisotropy and Mechanical Stress in Modern Copper Interconnect";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 167 - 170.

1131. R. Huang, W. Robl, G. Dehm, H. Ceric, T. Detzel:
"Disparate Tendency of Stress Evolution of Thin and Thick Electroplated Cu Films at Room Temperature";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 1 - 6.

1130. A. Makarov, V. Sverdlov, S. Selberherr:
"Stochastic Modeling of the Resistive Switching Mechanism in Oxide-Based Memory";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in "Proceedings of the 17th International Symposium on the Physics & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 309 - 312.

1129. I. Starkov, S. E. Tyaginov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 139 - 144.

1128. S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 341 - 345.

1127. P.-J. Wagner, T. Grasser, H. Reisinger, B. Kaczer:
"Oxide Traps in MOS Transistors: Semi-Automatic Extraction of Trap Parameters from Time Dependent Defect Spectroscopy";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 134 - 138.

1126. A. Dedyk, Y. Pavlova, O. V. Pakhomov, A. S. Starkov, I. Starkov, A. Semenov, S. Karmanenko:
"Capacitance Hysteresis of the Temperature Dependence for Ferroelectric Barium-Strontium Titanate Capacitors";
Poster: 16th Workshop on Dielectric Materials (WoDiM), Bratislava, Slovakia; 28.06.2010 - 30.06.2010; in "Book of Abstracts WoDiM 2010", (2010), 93.

1125. B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, G. Groeseneken:
"Recent Trends in Bias Temperature Instability";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; (invited) 28.06.2010 - 30.06.2010; in "Book of Abstracts", (2010), 55.

1124. A. Makarov, V. Sverdlov, S. Selberherr:
"Modeling of Resistive Switching in RRAM Using Monte Carlo Simulations";
Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 28.06.2010 - 30.06.2010; in "Book of Abstracts", (2010), 141.

1123. F. Schanovsky, W. Gös, T. Grasser:
"Mulit-Phonon Hole-Trapping from First-Principles";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 28.06.2010 - 30.06.2010; in "Book of Abstracts", (2010), 54.

1122. I. Starkov, S. E. Tyaginov, H. Enichlmair, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser:
"HC Degradation Model: Interface State Profile-Simulations vs. Experiment";
Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 28.06.2010 - 30.06.2010; in "Book of Abstracts", (2010), 128.

1121. M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, T. Grasser, G. Groeseneken:
"Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature Stress";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 28.06.2010 - 30.06.2010; in "Book of Abstracts", (2010), 28.

1120. M. Pourfath, V. Sverdlov, S. Selberherr:
"Modeling Demands for Nanoscale Devices";
Talk: Device Research Conference, South Bend; (invited) 21.06.2010 - 23.06.2010; in "Proceedings of the Device Research Conference (DRC)", (2010), ISBN: 978-1-4244-7870-5, 211 - 214.

1119. J. Weinbub, K. Rupp, S. Selberherr:
"ViennaIPD - An Input Control Language for Scientific Computing";
Talk: Industrial Simulation Conference (ISC), Budapest; 07.06.2010 - 09.06.2010; in "Proceedings of the Industrial Simulation Conference", (2010), ISBN: 978-90-77381-5-57, 34 - 38.

1118. N. Neophytou, H. Kosina:
"Thermoelectric Properties of Scaled Silicon Nanostructures Using the sp3d5s*-SO Atomistic Tight-Binding Model";
Talk: 29th International Conference on Thermoelectrics, Shanghai; 30.05.2010 - 03.06.2010; in "Proceedings of the 29th International Conference on Thermoelectrics", (2010), 71.

1117. A. Garcia-Barrientos, V. Palankovski, V. Grimalsky:
"Amplification of Space Charge Waves at Very High Electric Fields in GaAs Films";
Talk: 27th International Conference on Microelectronics (MIEL 2010), Nis; 16.05.2010 - 19.05.2010; in "Proceedings of the International Conference on Microelectronics", (2010), ISBN: 978-1-4244-7198-0, 161 - 164 doi:10.1109/MIEL.2010.5490510.

1116. V. Sverdlov, S. Selberherr:
"Modeling Floating Body Z-RAM Storage Cells";
Talk: 27th International Conference on Microelectronics (MIEL 2010), Nis; (invited) 16.05.2010 - 19.05.2010; in "Proceedings of the International Conference on Microelectronics", (2010), ISBN: 978-1-4244-7198-0, 45 - 50.

1115. T. Aichinger, S. Puchner, M. Nelhiebel, T. Grasser, H. Hutter:
"Impact of Hydrogen on Recoverable and Permanent Damage following Negative Bias Temperature Stress";
Talk: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0, 1063 - 1068.

1114. J. Franco, B. Kaczer, M. Cho, G. Eneman, G. Groeseneken, T. Grasser:
"Improvements of NBTI Reliability in SiGe p-FETs";
Talk: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0, 1082 - 1085.

1113. T. Grasser, H. Reisinger, P. Wagner, B. Kaczer, F. Schanovsky, W. Gös:
"The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability";
Talk: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0, 16 - 25.

1112. R. Huang, W. Robl, T. Detzel, H. Ceric:
"Modeling of Stress Evolution of Electroplated Cu Films during Self-annealing";
Poster: IEEE International Reliability Physics Symposium, Anaheim, USA; 02.05.2010 - 06.05.2010; in "Proceedings of the IEEE International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0, 911 - 917.

1111. B. Kaczer, T. Grasser, Ph. J. Roussel, J. Franco, R. Degraeve, L. Ragnarsson, E. Simoen, G. Groeseneken, H. Reisinger:
"Origin of NBTI Variability in Deeply Scaled pFETs";
Talk: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0, 26 - 32.

1110. G. Pobegen, T. Aichinger, M. Nelhiebel, T. Grasser:
"Dependence of the Negative Bias Temperature Instability on the Gate Oxide Thickness";
Talk: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0, 1073 - 1077.

1109. H. Reisinger, T. Grasser, C. Schlunder, W. Gustin:
"The Statistical Analysis of Individual Defects constituting NBTI and its Implications for Modeling DC- and AC-Stress";
Talk: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0, 7 - 15.

1108. J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair:
"Recovery-Free Electron Spin Resonance Observations of NBTI Degradation";
Talk: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0, 43 - 49.

1107. C. Poschalko, S. Selberherr:
"Relation between the PCB Near Field and the Common Mode Coupling from the PCB to Cables";
Talk: Asia-Pacific International Symposium on Electromagnetic Compatibility, Beijing; 12.04.2010 - 16.04.2010; in "Proceedings of the Asia-Pacific International Symposium on Electromagnetic Compatibility (EMC)", (2010), ISBN: 978-1-4244-5623-9, 1102 - 1105.

1106. K. Rupp:
"Increased Efficiency In Finite Element Computations Through Template Metaprogramming";
Talk: High Performance Computing Symposium (HPC), Orlando, FL, USA; 12.04.2010 - 15.04.2010; in "Proceedings of the Spring Simulation Multiconference 2010", (2010), ISBN: 978-1-4503-0069-8, 1 page(s) doi:10.1145/1878537.1878633.

1105. K. Rupp, T. Grasser, A. Jüngel:
"A Matrix Compression Scheme for Spherical Harmonics Expansions of the Boltzmann Transport Equation";
Talk: Junior Scientist Conference 2010 (JSC 2010), Wien; 07.04.2010 - 09.04.2010; in "Proceedings of the Junior Scientist Conference 2010", (2010), ISBN: 978-3-200-01797-9, 7 - 8.

1104. S. Vitanov, V. Palankovski:
"High-Temperature Small-Signal Analysis of AlGaN/GaN HEMTs";
Poster: Junior Scientist Conference 2010 (JSC 2010), Wien; 07.04.2010 - 09.04.2010; in "Proceedings of the Junior Scientist Conference", (2010), ISBN: 978-3-200-01797-9, 59 - 60.

1103. V. Sverdlov, S. Selberherr:
"Scalability of a Second Generation Z-RAM Cell: A Computational Study";
Talk: International Conference on Computational & Experimental Engineering and Sciences (ICCES), Las Vegas; 28.03.2010 - 01.04.2010; in "Proceedings of the International Conference on Computational & Experimental Engineering and Sciences (ICCES)", (2010), ISBN: 978-0-9824205-3-9, 232 - 247.

1102. Z. Stanojevic, O. Baumgartner, V. Sverdlov, H. Kosina:
"Subband Structure of Silicon Nanowires from the Hensel-Hasegawa-Nakayama Model";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Glasgow, Scotland; 18.03.2010 - 19.03.2010; in "Proceedings of the 11th International Conference on Ultimate Integration o Silicon", (2010), 69 - 72.

1101. N. Neophytou, H. Kosina:
"Atomistic Analysis of Thermoelectric Properties of Ultra Narrow Nanowires";
Talk: Annual March Meeting of the American Physical Society, Portland; 15.03.2010 - 19.03.2010; in "Proceedings of the Annual March Meeting of the American Physical Society", (2010), 401.

1100. V. Sverdlov, O. Baumgartner, S. Selberherr:
"Large Valley Splitting in Slightly Misaligned Uniaxially Strained Silicon Films";
Talk: APS March Meeting, Portland; 15.03.2010 - 19.03.2010; in "Bulletin American Physical Society (APS March Meeting 2010)", (2010), Vol.49/2, B9.00001.

1099. N. Neophytou, H. Kosina:
"Extracting thermoelectric properties of nanostructures using the atomistic sp3d5s*-SO tight-binding model";
Poster: 451. WE-Heraeus-Seminar, Physikzentrum Bad Honnef; 21.02.2010 - 24.02.2010; in "Nanostructured Thermoelectric Materials", (2010), 1 page(s) .

1098. O. Baumgartner, V. Sverdlov, H. Kosina, S. Selberherr:
"Strain-Induced Valley Splitting in Slightly Misaligned Silicon Films";
Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Grenoble; 25.01.2010 - 27.01.2010; in "Conference Proceedings of the Sixth Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2010), 91 - 92.

1097. S. Vainshtein, V. Yuferev, J. Kostamovaara, V. Palankovski:
"Collapsing Field Domains in Avalanche GaAs Transistors: Peculiar Phenomenon and Prospective Applications";
International Scientific and Applied Science Conference (ET), Sozopol, Bulgaria; (invited) 22.09.2009 - 24.09.2009; in "Annual Journal of Electronics", (2010), Vol.4, ISSN: 1313-1842, 12 - 17.

1096. M. Pourfath, S. Selberherr:
"Modeling Optical Sensors Based on Carbon Nanotubes";
Talk: International Symposium on Microwave and Optical Technology (ISMOT), New Delhi; (invited) 16.12.2009 - 19.12.2009; in "Proceedings of the International Symposium on Microwave and Optical Technology (ISMOT)", (2009), 1381 - 1384.

1095. M. Pourfath, S. Selberherr:
"Carbon-Based Electronics: A Computational Study";
Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Delhi; (invited) 15.12.2009 - 19.12.2009; in "Proceedings of the International Workshop on the Physics of Semiconductor Devices (IWPSD)", (2009), 6 page(s) .

1094. V. Sverdlov, O. Baumgartner, S. Selberherr:
"Subband Parameters in Strained (110) Silicon Films from the Hensel-Hasegawa-Nakayama Model of the Conduction Band";
Talk: International Semiconductor Device Research Symposium (ISDRS), College Park; 09.12.2009 - 11.12.2009; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS)", (2009), ISBN: 978-1-4244-6031-1, TP6-03.1 - 2.

1093. S. Vitanov, V. Palankovski, S. Maroldt, R. Quay:
"High-Temperature Modeling of AlGaN/GaN HEMTs";
Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 09.12.2009 - 11.12.2009; in "2009 International Semiconductor Device Research Symposium", (2009), ISBN: 978-1-4244-6031-1, 2 page(s) doi:10.1109/ISDRS.2009.5378300.

1092. T. Grasser, H. Reisinger, W. Gös, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, M. Nelhiebel, J. Franco, B. Kaczer:
"Switching Oxide Traps as the Missing Link Between Negative Bias Temperature Instability and Random Telegraph Noise";
Talk: International Electron Devices Meeting (IEDM), Baltimore, MD, USA; 07.12.2009 - 09.12.2009; in "2009 International Electron Devices Meeting (IEDM) Technical Digest", (2009), 1 - 4 doi:10.1109/IEDM.2009.5424235.

1091. M. Pourfath, H. Kosina, S. Selberherr:
"Theoretical Study of Graphene Nanoribbon Photo-Detectors";
Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kaanapali; 30.11.2009 - 04.12.2009; in "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2009), 178 - 179.

1090. S. Vitanov, V. Palankovski, S. Maroldt, R. Quay:
"A Simulation Study of Enhancement-Mode AlGaN/GaN HEMTs with Recessed Gates";
Talk: European Workshop on Heterostructure Technology, Guenzburg/Ulm; 02.11.2009 - 04.11.2009; in "HETECH 2009 Book of Abstracts", (2009), 109 - 110.

1089. B. Bindu, W. Gös, B. Kaczer, T. Grasser:
"Analytical Solution of the Switching Trap Model for Negative Bias Temperature Stress";
Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 18.10.2009 - 22.10.2009; in "2009 IEEE International Integrated Reliability Workshop Final Report", (2009), ISBN: 978-1-4244-3921-8, 93 - 96.

1088. H. Reisinger, T. Grasser, C. Schlünder:
"A Study of NBTI by the Statistical Analysis of the Properties of Individual Defects in pMOSFETS";
Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 18.10.2009 - 22.10.2009; in "2009 IEEE International Integrated Reliability Workshop Final Report", (2009), ISBN: 978-1-4244-3921-8, 30 - 35.

1087. J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair:
"What Triggers NBTI? An "On The Fly" Electron Spin Resonance Approach";
Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 18.10.2009 - 22.10.2009; in "2009 IEEE International Integrated Reliability Workshop Final Report", (2009), ISBN: 978-1-4244-3921-8, 42 - 45.

1086. R. Southwick III, B. Knowlton, B. Kaczer, T. Grasser:
"On the Thermal Activation of Negative Bias Temperature Instability";
Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 18.10.2009 - 22.10.2009; in "2009 IEEE International Integrated Reliability Workshop Final Report", (2009), ISBN: 978-1-4244-3921-8, 36 - 41.

1085. R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"Electromigration Failure Development in Modern Dual-Damascene Interconnects";
Talk: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 12.10.2009 - 14.10.2009; in "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", (2009), Vol.15, ISBN: 978-3-90188-237-1, 5 page(s) .

1084. V. Sverdlov, S. Selberherr:
"Scaling of Advanced Floating Body Z-RAM Storage Cells: A Modeling Approach";
Poster: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 12.10.2009 - 14.10.2009; in "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", (2009), Vol.21, ISBN: 978-3-90188-237-1, 4 page(s) .

1083. Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser:
"On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 05.10.2009 - 09.10.2009; in "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009), 4 page(s) .

1082. S. E. Tyaginov, V. Sverdlov, W. Gös, T. Grasser:
"Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 05.10.2009 - 09.10.2009; in "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009), .

1081. V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
"Modeling Techniques for Strained CMOS Technology";
Talk: Meeting of the Electrochemical Society, ULSI Process Integration, Vienna; (invited) 04.10.2009 - 09.10.2009; in "216th ECS Meeting", (2009), ISBN: 978-1-56677-744-5, 3 - 18.

1080. Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser:
"Comparison of Fast Measurement Methods for Short-Term Negative Bias Temperature Stress and Relaxation";
Talk: European Solid-State Device Research Conference (ESSDERC), Athens; 14.09.2009 - 18.09.2009; in "Proceedings of the 39th European Solid-State Device Research Conference", (2009), ISBN: 978-1-4244-4351-2, 311 - 314.

1079. G. Milovanovic, O. Baumgartner, H. Kosina:
"Simulation of Quantum Cascade Lasers using Robin Boundary Conditions";
Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Gwangju; 14.09.2009 - 17.09.2009; in "Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices", (2009), ISBN: 978-1-4244-4180-8, 7 - 8.

1078. M. Pourfath, O. Baumgartner, H. Kosina, S. Selberherr:
"Performance Evaluation of Graphene Nanoribbon Infrared Photodetectors";
Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Gwangju; 14.09.2009 - 17.09.2009; in "Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices", (2009), ISBN: 978-1-4244-4180-8, 13 - 14.

1077. S. Vitanov, V. Palankovski:
"Influence of the Gate Recess on the Performance of Enhancement-Mode AlGaN/GaN HEMTs";
Talk: International Scientific and Applied Science Conference (ET), Sozopol; 14.09.2009 - 17.09.2009; in "Annual Journal of Electronics", (2009), ISSN: 1313-1842, 144 - 147.

1076. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"Copper Microstructure Impact on Evolution of Electromigration Induced Voids";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in "Proceedings of the 14th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 178 - 181 doi:10.1109/SISPAD.2009.5290222.

1075. O. Ertl, S. Selberherr:
"A Fast Void Detection Algorithm for Three-Dimensional Deposition Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in "Proceedings of the 14th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 174 - 177 doi:10.1109/SISPAD.2009.5290221.

1074. W. Gös, T. Grasser, M. Karner, B. Kaczer:
"A Model for Switching Traps in Amorphous Oxides";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in "Proceedings of the 14th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 159 - 162 doi:10.1109/SISPAD.2009.5290226.

1073. H. Kosina:
"Transport Modeling for Nanowires and Nanotubes";
Talk: Final FoNE Conference, Miraflores de la Sierra, Madrid; 09.09.2009 - 13.09.2009; in "Proceedings of the Final FoNE Conference", (2009), 35.

1072. N. Neophytou, H. Kosina, S. Selberherr, G. Klimeck:
"Dependence of Injection Velocity and Capacitance of Si Nanowires on Diameter, Orientation, and Gate Bias: An Atomistic Tight-Binding Study";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in "Proceedings of the 14th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 71 - 74 doi:10.1109/SISPAD.2009.5290245.

1071. R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"The Effect of Copper Grain Size Statistics on the Electromigration Lifetime Distribution";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in "Proceedings of the 14th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 182 - 185 doi:10.1109/SISPAD.2009.5290219.

1070. V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr:
"Thickness Dependence of the Effective Masses in a Strained Thin Silicon Film";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in "Proceedings of the 14th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 51 - 54 doi:10.1109/SISPAD.2009.5290252.

1069. O. Ertl, S. Selberherr:
"Three-Dimensional Plasma Etching Simulation using Advanced Ray Tracing and Level Set Techniques";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 31.08.2009 - 03.09.2009; in "ECS Transactions", (2009), ISBN: 978-1-56677-737-7, 61 - 68.

1068. R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"The Effect of Microstructure on Electromigration-Induced Failure Development";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 31.08.2009 - 03.09.2009; in "ECS Transactions", (2009), ISBN: 978-1-56677-737-7, 345 - 352.

1067. V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr:
"Impact of Confinement and Stress on the Subband Parameters in Ultra-Thin Silicon Films";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 31.08.2009 - 03.09.2009; in "ECS Transactions", (2009), ISBN: 978-1-56677-737-7, 389 - 396.

1066. N. Neophytou, M. Wagner, H. Kosina, S. Selberherr:
"Analysis of Thermoelectric Properties of Scaled Silicon Nanostructures using an Atomistic Thight-Binding Model";
Talk: 28th International Conference/7th European Conference on Thermoelectrics, Freiburg; 26.07.2009 - 30.07.2009; in "Book of Abstracts", (2009), 91.

1065. R. Heinzl:
"Data Structure Properties for Scientific Computing: An Algebraic Topology Library";
Talk: European Conference on Object-Oriented Programming, Genova; 07.07.2009 in "Proceedings of the 8th workshop on Parallel/High-Performance", (2009), ISBN: 978-1-60558-547-5, .

1064. P. Schwaha, R. Heinzl, M. Nedjalkov:
"The Forced Evolution of Implementations: Using a Monte Carlo Algorithm as Example";
Talk: European Conference on Object-Oriented Programming, Genova; 07.07.2009 in "Proceedings of the 8th workshop on Parallel/High-Performance", (2009), ISBN: 978-1-60558-547-5, .

1063. R. Sonderfeld, R. Heinzl:
"A Generic and Self-Optimizing Polynomial Library";
Talk: European Conference on Object-Oriented Programming, Genova; 07.07.2009 in "Proceedings of the 8th workshop on Parallel/High-Performance", (2009), ISBN: 978-1-60558-547-5, .

1062. V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovski, S. Selberherr:
"Mobility Enhanced by Shear Strain Splitting of Unprimed Subbands in (001) Silicon Films and Point Contacts";
Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Cracow; 07.07.2009 - 11.07.2009; in "Abstracts of the International Conference on Spintronics and Quantum Information Technology (SPINTECH)", (2009), 301.

1061. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"The Effect of Microstructure on Electromigration Induced Voids";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 06.07.2009 - 10.07.2009; in "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2009), ISBN: 9781-4244-3912-6, 694 - 697.

1060. R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"The Effect of Microstructure on the Electromigration Lifetime Distribution";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 06.07.2009 - 10.07.2009; in "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2009)", (2009), 731 - 734.

1059. P. Schwaha, J. Cervenka, M. Nedjalkov, T. Gurov, G. Arsov, A. Misev, A. Zoric, S. Ilic:
"Computational Electronics on GRID: A Mixed Mode Carrier Transport Model";
Talk: International Conference On Applications Of Mathematics In Technical And Natural Sciences, Sozopol (Bulgaria); 22.06.2009 - 27.06.2009; in "1st International Conference On Applications Of Mathematics In Technical And Natural Sciences", (2009), Vol.1186, ISBN: 978-0-7354-0752-7, 206 - 214 doi:10.1063/1.3265331.

1058. I. Starkov, S. E. Tyaginov, T. Grasser:
"Green´s Function Asymptotic in Two-Layered Periodic Medium";
Talk: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 22.06.2009 - 26.06.2009; in "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), 111 - 112.

1057. V. Sverdlov, O. Baumgartner, S. E. Tyaginov, T. Windbacher, S. Selberherr:
"Subband Structure in Ultra-Thin Silicon Films";
Talk: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 22.06.2009 - 26.06.2009; in "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), 62 - 63.

1056. V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
"Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting";
Poster: Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads, Sardinia; 14.06.2009 - 19.06.2009; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads", (2009), 58.

1055. P.-J. Wagner, T. Aichinger, T. Grasser, M. Nelhiebel, L.K.J. Vandamme:
"Possible Correlation between Flicker Noise and Bias Temperature Stress";
Talk: International Conference on Noise and Fluctuations (ICNF), Pisa; 14.06.2009 - 19.06.2009; in "Proceedings of the 20th International Conference on Noise and Fluctuations", (2009), 621 - 624.

1054. V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
"Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Ultra-Thin Films";
Talk: 2009 Silicon Nanoelectronics Workshop, Kyoto; 13.06.2009 - 14.06.2009; in "Proceedings of 2009 Silicon Nanoelectronics Workshop", (2009), 95 - 96.

1053. M. Nedjalkov, P. Schwaha, O. Baumgartner, S. Selberherr:
"Particle Model of the Scattering-Induced Wigner Function Correction";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 04.06.2009 - 08.06.2009; in "Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC)", (2009), 79.

1052. V. Sverdlov, M. Vasicek, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr:
"Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 04.06.2009 - 08.06.2009; in "Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC)", (2009), 93.

1051. O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina:
"Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB Devices";
Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in "Proceedings of the 13th International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 53 - 56 doi:10.1109/IWCE.2009.5091131.

1050. G. Milovanovic, H. Kosina:
"Nonparabolicity Effects in Quantum Cascade Lasers";
Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in "Proceedings of the 13th International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 189 - 192 doi:10.1109/IWCE.2009.5091129.

1049. N. Neophytou, H. Kosina, T. Rakshit:
"Quantum Transport Simulations of InGaAs HEMTs: Influence of Mass Variations on the Device Performance";
Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in "Proceedings of the 13th International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 161 - 164 doi:10.1109/IWCE.2009.5091141.

1048. P. Schwaha, O. Baumgartner, R. Heinzl, M. Nedjalkov, S. Selberherr, I. Dimov:
"Classical Approximation of the Scattering Induced Wigner Correction Equation";
Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in "Proceedings of the 13th International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 177 - 180 doi:10.1109/IWCE.2009.5091092.

1047. V. Sverdlov, O. Baumgartner, H. Kosina, S. Selberherr, F. Schanovsky, D. Esseni:
"The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers";
Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in "Proceedings of the 13th International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 49 - 52 doi:10.1109/IWCE.2009.5091158.

1046. S. E. Tyaginov, V. Sverdlov, W. Gös, T. Grasser:
"Statistics of Si-O Bond-Breakage Rate Variations induced by O-Si-O Angle Fluctuations";
Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in "Proceedings of the 13th International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 29 - 32 doi:10.1109/IWCE.2009.5091156.

1045. T. Windbacher, V. Sverdlov, S. Selberherr:
"Modeling of Low Concentrated Buffer DNA Detection with Suspend Gate Field-Effect Transistors (SGFET)";
Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in "Proceedings of the 13th International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 169 - 172 doi:10.1109/IWCE.2009.5091122.

1044. T. Grasser, B. Kaczer:
"Critical Modeling Issues in Negative Bias Temperature Instability";
Talk: 215th ECS Meeting, San Francisco; (invited) 24.05.2009 - 29.05.2009; in "Meeting Abstracts MA 2009-01", (2009), ISSN: 1091-8213, 793.

1043. V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr:
"Impact of Confinement of Semiconductor and Band Engineering on Future Device Performance";
Talk: Meeting of the Electrochemical Society, Silicon-on-Insulator Technology and Devices, San Francisco; (invited) 24.05.2009 - 29.05.2009; in "215th ECS Meeting", (2009), Vol.19/4, ISBN: 978-1-56677-712-4, 15 - 26.

1042. T. Aichinger, M. Nelhiebel, T. Grasser:
"On the Temperature Dependence of NBTI Recovery";
Talk: International Reliability Physics Symposium (IRPS), Montreal; (invited) 26.04.2009 - 30.04.2009; in "2009 IEEE International Reliability Physics Symposium Proceedings", (2009), 1.

1041. T. Aichinger, M. Nelhiebel, T. Grasser:
"Unambiguous Identification of the NBTI Recovery Mechanism using Ultra-Fast Temperature Changes";
Talk: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in "2009 IEEE International Reliability Physics Symposium Proceedings", (2009), 2 - 7.

1040. T. Grasser, B. Kaczer, W. Gös, T. Aichinger, Ph. Hehenberger, M. Nelhiebel:
"A Two-Stage Model for Negative Bias Temperature Instability";
Talk: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in "2009 IEEE International Reliability Physics Symposium Proceedings", (2009), 33 - 44.

1039. Ph. Hehenberger, T. Aichinger, T. Grasser, W. Gös, O. Triebl, B. Kaczer, M. Nelhiebel:
"Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement Technique";
Poster: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in "2009 IEEE International Reliability Physics Symposium Proceedings", (2009), 1033 - 1038.

1038. B. Kaczer, T. Grasser, J. Martin-Martinez, E. Simoen, M. Aoulaiche, Ph. J. Roussel, G. Groeseneken:
"NBTI from the Perspective of Defect States with Widely Distributed Time Scales";
Talk: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in "2009 IEEE International Reliability Physics Symposium Proceedings", (2009), 55 - 60.

1037. S. E. Tyaginov, W. Gös, T. Grasser, V. Sverdlov, P. Schwaha, R. Heinzl, F. Stimpfl:
"Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole Crystal";
Talk: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in "2009 IEEE International Reliability Physics Symposium Proceedings", (2009), 514 - 522.

1036. M. Pourfath, H. Kosina:
"Carbon Based Electronics: A Computational Study";
Talk: Quantum Systems and Devices: Analysis, Simulations, Applications, Beijing; (invited) 20.04.2009 - 24.04.2009; in "Quantum Systems and Devices: Analysis, Simulations, Applications", (2009), 18.

1035. M. Vasicek:
"Advanced Macroscopic Transport Models";
Talk: Quantum Systems and Devices: Analysis, Simulations, Applications, Beijing; (invited) 20.04.2009 - 24.04.2009; in "Quantum Systems and Devices: Analysis, Simulations, Applications", (2009), 32.

1034. S. E. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser:
"Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics";
Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 13.04.2009 - 17.04.2009; in "Proceedings of the 2009 MRS Spring Meeting", (2009), .

1033. S. E. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser:
"Si-O Bond-Breakage Energetics under Consideration of the Whole Crystal";
Talk: International Semiconductor Technology Conference & China Semiconductor Technology International Conference, Shanghai; 19.03.2009 - 20.03.2009; in "Proceedings of the International Semiconductor Technology Conference & China Semiconductor Technology International Conference", (2009), 84.

1032. V. Sverdlov, T. Windbacher, O. Baumgartner, F. Schanovsky, S. Selberherr:
"Valley Splitting in Thin Silicon Films from a Two-Band k·p Model";
Poster: International Conference on Ultimate Integration of Silicon (ULIS), Aachen; 18.03.2009 - 20.03.2009; in "Proceedings of the 10th International Conference on Ultimate Integration of Silicon", (2009), 277 - 280.

1031. O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina:
"Numerical Study of the Electron Subband Structure in Strained Silicon UTB Devices";
Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Göteborg; 19.01.2009 - 21.01.2009; in "EUROSOI 2009 Conference Proceedings", (2009), 57 - 58.

1030. V. Sverdlov, T. Windbacher, O. Baumgartner, S. Selberherr:
"Electron Subband Structure and Valley Splitting in Silicon Ultra-Thin Body SOI Structures from the Two-Band k.p Model";
Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Göteborg; 19.01.2009 - 21.01.2009; in "EUROSOI 2009 Conference Proceedings", (2009), 81 - 82.

1029. T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer:
"Study of the Properties of Biotin-Streptavidin Sensitive Biofets";
Talk: 2nd International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC), Porto; 14.01.2009 - 17.01.2009; in "Final Program and Book of Abstracts", (2009), 42.

1028. T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer:
"Study of the Properties of Biotin-Streptavidin Sensitive BioFETs";
Talk: 2nd International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC), Porto, Portugal; 14.01.2009 - 17.01.2009; in "Proceedings of the International Conference on Biomedical Electronics and Devices (BIODEVICES)", (2009), ISBN: 978-989-8111-72-2, 24 - 30.

1027. T. Grasser:
"Towards Understanding Negative Bias Temperature Instability";
IEEE Conference Proceedings, in "Integrated Reliability Workshop Final Report (12-16 Oct. 2008)", (2008), 145 doi:10.1109/IRWS.2008.4796110.

1026. M. Pourfath, S. Selberherr:
"Modeling Current Transport in Carbon Nanotube Transistors";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; (invited) 08.12.2008 - 10.12.2008; in "IEEE International Conference on Electron Devices and Solid-State Circuit 2008", (2008), ISBN: 978-1-4244-2540-2, 6 page(s) .

1025. V. Palankovski:
"Novel High-Performance GaN Transistors";
Talk: Advanced Heterostructures and Nanostructures Workshop (AHNW), Kona; (invited) 07.12.2008 - 12.12.2008; in "Abstracts Advanced Heterostructures and Nanostructures Workshop (AHNW)", (2008), MO-03.

1024. M. Pourfath, S. Selberherr:
"Analysis of Carbon Nanotube Photo-Detectors";
Talk: Advanced Heterostructures and Nanostructures Workshop (AHNW), Kona; (invited) 07.12.2008 - 12.12.2008; in "Abstracts Advanced Heterostructures and Nanostructures Workshop (AHNW)", (2008), TU-06.

1023. S. Vitanov, V. Palankovski:
"Enhancement Mode HEMTs: Evaluation of Two Approaches by Numerical Simulation";
Talk: Junior Scientist Conference 2008, Technische Universität Wien; 17.11.2008 - 18.11.2008; in "Junior Scientist Conference Proceedings", (2008), ISBN: 978-3-200-01612-5, 221 - 222.

1022. A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr:
"A Numerical Study of Graphene Nano-Ribbon based Resonant Tunneling Diodes";
Talk: International Symposium on Graphene Devices: Technology, Physics, and Modeling (ISGD), Japan; 17.11.2008 - 19.11.2008; in "International Symposium on Graphene Devices: Technology, Physics, and Modeling", (2008), 66 - 67.

1021. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"Stress-Induced Anisotropy of Electromigration in Copper Interconnects";
Talk: International Workshop on Stress-Induced Phenomena in Metallization, Austin; 05.11.2008 - 07.11.2008; in "Proceedings of the Stress-Induced Phenomena in Metallization: 10th International Workshop", (2008), ISBN: 978-0-7354-0680-3, 56 - 62.

1020. S. Vitanov, V. Palankovski, G. Pozzovivo, J. Kuzmik, R. Quay:
"Systematical Study of InAlN/GaN Devices by Numerical Simulation";
Talk: European Workshop on Heterostructure Technology, Venice; 03.11.2008 - 05.11.2008; in "HETECH 2008 Book of Abstracts", (2008), ISBN: 978-88-6129-296-3, 159 - 160.

1019. V. Sverdlov, S. Selberherr:
"Modeling and Simulation of Advanced Floating Body Z-RAM Memory Cells";
Talk: European Simulation and Modeling Conference (ESMC), Le Havre; 27.10.2008 - 29.10.2008; in "Proceedings European Simulation and Modeling Conference (ESM)", (2008), ISBN: 978-90-77381-44-1, 380 - 384.

1018. M. Pourfath, H. Kosina, S. Selberherr:
"Current Transport in Carbon Nanotube Transistors";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Beijing; (invited) 20.10.2008 - 23.10.2008; in "The 9th Internationl Conference on Solid-State and Integrated-Circuit Technology", (2008), ISBN: 978-1-4244-2186-2, 361 - 364.

1017. T. Grasser, B. Kaczer, T. Aichinger, W. Gös, M. Nelhiebel:
"Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks";
Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 18.10.2008 - 22.10.2008; in "2008 IEEE International Integrated Reliability Workshop Final Report", (2008), 91 - 95.

1016. H. Reisinger, R. Vollertsen, P.-J. Wagner, T. Huttner, A. Martin, S. Aresu, W. Gustin, T. Grasser, C. Schlünder:
"The Effect of Recovery on NBTI Characterization of Thick Non-Nitrided Oxides";
Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 18.10.2008 - 22.10.2008; in "2008 IEEE International Integrated Reliability Workshop Final Report", (2008), 1 - 6.

1015. S. Okhonin, M. Nagoga, C. Lee, J. Colinge, A. Afzalian, R. Yan, N. Akhavan, W. Xiong, V. Sverdlov, S. Selberherr, C. Mazure:
"Ultra-Scaled Z-RAM Cell";
Talk: 2008 IEEE International SOI Conference, New Paltz; 06.10.2008 - 09.10.2008; in "2008 IEEE International SOI Conference Proceedings", (2008), ISBN: 978-1-4244-1954-8, 157 - 158.

1014. T. Grasser, B. Kaczer, W. Gös:
"An Energy-Level Perspective of Bias Temperature Instability";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht; (invited) 29.09.2008 - 02.10.2008; in "Proceedings of the 19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2008), .

1013. T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger:
"A General Bottom-Up Modeling Approach for BioFETs";
Poster: 2. Internationale Konferenz NanoSens2008, Vienna; 29.09.2008 - 30.09.2008; in "Abstracts Conf.on Nanosensors for Industrial Applications (NANOSENS)", (2008), .

1012. S. Vitanov, V. Palankovski:
"Simulation of AlGaN/GaN HEMTs with InGaN Cap Layer";
Talk: International Scientific and Applied Science Conference (ET), Sozopol; 24.09.2008 - 26.09.2008; in "The Seventeenth International Scientific and Applied Science Conference Electronics ET'2008 Proceedings of the Conference Book 4", (2008), ISSN: 1313-1842, 67 - 70.

1011. M. Pourfath, H. Kosina, S. Selberherr:
"Reduction of the Dark-Current in Carbon Nanotube Photo-Detectors";
Talk: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 15.09.2008 - 19.09.2008; in "European Solid-State Device Research Conference", (2008), 214 - 217.

1010. O. Baumgartner, M. Karner, H. Kosina:
"Modeling of High-k-Metal-Gate-Stacks Using the Non-Equilibrium Green´s Function Formalism";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 353 - 356 doi:10.1109/SISPAD.2008.4648310.

1009. O. Baumgartner, P. Schwaha, M. Karner, M. Nedjalkov, S. Selberherr:
"Coupling of Non-Equilibrium Green's Function and Wigner Function Approaches";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 345 - 348 doi:10.1109/SISPAD.2008.4648308.

1008. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"Analysis of Microstructure Impact on Electromigration";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 241 - 244 doi:10.1109/SISPAD.2008.4648282.

1007. O. Ertl, S. Selberherr:
"Three-Dimensional Topography Simulation Using Advanced Level Set and Ray Tracing Methods";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 325 - 328 doi:10.1109/SISPAD.2008.4648303.

1006. W. Gös, M. Karner, S. E. Tyaginov, Ph. Hehenberger, T. Grasser:
"Level Shifts and Gate Interfaces as Vital Ingredients in Modeling of Charge Trapping";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 69 - 72 doi:10.1109/SISPAD.2008.4648239.

1005. T. Grasser, W. Gös, B. Kaczer:
"Modeling Bias Temperature Instability During Stress and Recovery";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 65 - 68 doi:10.1109/SISPAD.2008.4648238.

1004. R. Orio, H. Ceric, S. Carniello, S. Selberherr:
"Analysis of Electromigration in Redundant Vias";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 237 - 240 doi:10.1109/SISPAD.2008.4648281.

1003. M. Pourfath, H. Kosina:
"Numerical Study of Carbon Nanotube Infra-Red Photo-Detectors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 81 - 84 doi:10.1109/SISPAD.2008.4648242.

1002. F. Stimpfl, R. Heinzl, P. Schwaha, S. Selberherr:
"A Robust Parallel Delaunay Mesh Generation Approach Suitable for Three-Dimensional TCAD";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 265 - 268 doi:10.1109/SISPAD.2008.4648288.

1001. V. Sverdlov, T. Windbacher, S. Selberherr:
"Mobility Enhancement in Thin Silicon Films: Strain and Thickness Dependences of the Effective Masses and Non-Parabolicity Parameter";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 145 - 148 doi:10.1109/SISPAD.2008.4648258.

1000. M. Vasicek, J. Cervenka, M. Karner, T. Grasser:
"Consistent Higher-Order Transport Models for SOI MOSFETs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 129 - 132 doi:10.1109/SISPAD.2008.4648254.

999. T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer:
"Simulation of Field-Effect Biosensors (BioFETs)";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 193 - 196 doi:10.1109/SISPAD.2008.4648270.

998. C. Poschalko, S. Selberherr:
"Radiated Emission from the Slot of a Slim Cubical Enclosure with Multiple Sources Inside";
Talk: International Symposium on Electromagnetic Compatibility (EMC), Hamburg; 08.09.2008 - 12.09.2008; in "Proceedings of the 8th International Symposium on Electromagnetic Compatibility", (2008), ISBN: 978-3-930400-60-7, 109 - 114.

997. R. Orio, S. Carniello, H. Ceric, S. Selberherr:
"Analysis of Electromigration in Dual-Damascene Interconnect Structures";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Gramado; 01.09.2008 - 04.09.2008; in "ECS Transactions", (2008), ISBN: 978-1-56677-646-2, 337 - 348.

996. M. Pourfath, O. Baumgartner, H. Kosina:
"On the Non-locality of the Electron-Photon Self-Energy: Application to Carbon Nanotube Photo-Detectors";
Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Nottingham; 01.09.2008 - 04.09.2008; in "Proceedings of the 8^{th} International Conference on Numerical Simulation of Optoelectronic Devices", (2008), ISBN: 978-1-4244-2307-1, 99 - 100 doi:10.1109/NUSOD.2008.4668261.

995. V. Sverdlov, S. Selberherr:
"Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Gramado; 01.09.2008 - 04.09.2008; in "ECS Transactions", (2008), ISBN: 978-1-56677-646-2, 159 - 168.

994. S. Vitanov, P. Vitanov, V. Palankovski:
"Two-Dimensional Numerical Optimization of MIS Solar Cell on N-Type Silicon";
Poster: European Photovoltaic Solar Energy Conference, Valencia; 01.09.2008 - 05.09.2008; in "23rd European Photovoltaic Solar Energy Conference", (2008), 1743 - 1745.

993. C. Poschalko, S. Selberherr:
"Domain Separation with Port Interfaces for Calculation of Emissions from Enclosure Slots";
Talk: International Symposium on Electromagnetic Compatibility (EMC), Detroit; 18.08.2008 - 22.08.2008; in "Proceedings International Symposium on Electromagnetic Compatibility", (2008), Vol.1113, ISBN: 978-1-4244-1699-8, doi:10.1109/ISEMC.2008.4652083.

992. T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer:
"Simulation of Field-Effect Biosensors (BioFETs) for Biotin-Streptavidin Complexes";
Poster: International Conference on Physics of Semiconductor (ICPS), Rio de Janeiro; 27.07.2008 - 01.08.2008; in "PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors", (2008), ISBN: 978-0-7354-0736-7, 507 - 508.

991. R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr:
"Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment";
Talk: Workshop on Parallel Object-Oriented Scientific Computing (POOSC), Paphos; 08.07.2008 in "7th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing (POOSC'08)", (2008), 5 page(s) .

990. P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr:
"Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications";
Talk: Workshop on Parallel Object-Oriented Scientific Computing (POOSC), Paphos; 08.07.2008 in "7th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing (POOSC'08)", (2008), 6 page(s) .

989. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"TCAD Solutions for Submicron Copper Interconnect";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 07.07.2008 - 11.07.2008; in "Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1, 78 - 81.

988. W. Gös, M. Karner, V. Sverdlov, T. Grasser:
"A Rigorous Model for Trapping and Detrapping in Thin Gate Dielectrics";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 07.07.2008 - 11.07.2008; in "Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1, 249 - 254.

987. M. Pourfath, V. Sverdlov, H. Kosina:
"On the Role of Off‐Diagonal Dephasing in Carbon Nanotube Based Photo‐Detectors";
Talk: 1st FoNE Conference Nanoelectronics 2008, Taormina, Italy; 29.06.2008 - 03.07.2008; in "1st Fone Conference Nanoelectronics 2008", (2008), 41.

986. S. E. Tyaginov, M. Vexler, A. El Hdiy, K. Gacem, V Zaporojtchenko:
"Electrical Methods for Estimating the Correlation Length of Insulator Thickness Fluctuations in MIS Tunnel Structures";
Poster: Workshop on Dielectrics in Microelectronics (WODIM), Berlin; 23.06.2008 - 25.06.2008; in "15th Workshop on Dielectrics in Microelectronics", (2008), 227 - 228.

985. P. Schwaha, F. Stimpfl, R. Heinzl, S. Selberherr:
"A Parallel Delaunay and Advancing Front Mesh Generation Approach";
Talk: Intl. Conf. on Numerical Geometry, Grid Generation and Scientific Computing (Numgrid), Moscow, Russia; 10.06.2008 - 13.06.2008; in "Proceedings Intl. Conf.on Numerical Geometry, Grid Generation and Scientific Computing", (2008), 2 page(s) .

984. F. Stimpfl, R. Heinzl, P. Schwaha, S. Selberherr:
"A Delaunay Mesh Generation Approach without the Use of Convex Hulls";
Talk: Intl. Conf. on Numerical Geometry, Grid Generation and Scientific Computing (Numgrid), Moscow, Russia; 10.06.2008 - 13.06.2008; in "Proceedings Intl. Conf.on Numerical Geometry, Grid Generation and Scientific Computing", (2008), 2 page(s) .

983. C. Poschalko, S. Selberherr:
"Calculation of the Radiation from the Slot of a Slim Enclosure with a Cavity Resonator Model";
Talk: International Zurich Symposium on Electromagnetic Compatibility, Singapore; 19.05.2008 - 22.05.2008; in "19th International Zurich Symposium on Electromagnetic Compatibility,", (2008), 634 - 637.

982. R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr:
"A Parallel Generic Scientific Simulation Environment";
Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Trondheim; 13.05.2008 - 16.05.2008; in "Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing", (2008), .

981. P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr:
"Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages";
Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Trondheim; 13.05.2008 - 16.05.2008; in "Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing", (2008), .

980. F. Stimpfl, R. Heinzl, P. Schwaha, S. Selberherr:
"High Performance Parallel Mesh Generation and Adaptation";
Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Trondheim; 13.05.2008 - 16.05.2008; in "Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing", (2008), .

979. H. Ceric, R. Orio, S. Selberherr:
"Comprehensive Modeling of Electromigration Induced Interconnect Degradation Mechanisms";
Talk: International Conference on Microelectronics (MIEL), Nis; (invited) 11.05.2008 - 14.05.2008; in "Proceedings 26th International Conference on Microelectronics", (2008), ISBN: 978-1-4244-1881-7, 69 - 76.

978. G. Milovanovic, H. Kosina:
"Valence Band Deformation Potentials in Semiconductors";
Poster: International SiGe Technology and Device Meeting (ISTDM), Hsinchu; 11.05.2008 - 14.05.2008; in "Abstract Book", (2008), 215 - 216.

977. V. Sverdlov, S. Selberherr:
"Strain-Controlled Valley Splitting in Si-SiGe Heterostructures";
Talk: International SiGe Technology and Device Meeting (ISTDM), Hsinchu; 11.05.2008 - 14.05.2008; in "Abstract Book", (2008), 20 - 21.

976. M. Pourfath, S. Selberherr:
"Current Transport in Carbon Nanotube Transistors";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Cancun; (invited) 28.04.2008 - 30.04.2008; in "Proceedings of the 7th International Caribbean Conference on Devices, Circuits and Systems", (2008), ISBN: 978-1-4244-1957-9, 6 page(s) .

975. T. Grasser:
"Negative Bias Temperature Instability: Modeling Challenges and Perspectives";
Talk: International Reliability Physics Symposium (IRPS), Phoenix (Tutorial); 27.04.2008 - 01.05.2008; in "2008 Reliability Physics Tutorial Notes", (2008), 113 - 120.

974. T. Grasser, B. Kaczer, W. Gös:
"An Energy-Level Perspective of Bias Temperature Instability";
Talk: International Reliability Physics Symposium (IRPS), Phoenix; 27.04.2008 - 01.05.2008; in "Proceedings of the International Reliability Physics Symposium", (2008), 28 - 38.

973. B. Kaczer, T. Grasser, Ph. J. Roussel, J. Martin-Martinez, R. O´Connor, B. O´Sullivan, G. Groeseneken:
"Ubiquitous Relaxation in BTI Stressing-New Evaluation and Insights";
Talk: International Reliability Physics Symposium (IRPS), Phoenix; 27.04.2008 - 01.05.2008; in "Proceedings of the International Reliability Physics Symposium", (2008), 20 - 27.

972. V. Sverdlov, T. Windbacher, H. Kosina, S. Selberherr:
"Stress-Induced Valley Splitting in Silicon Thin Films";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Udine; 12.03.2008 - 14.03.2008; in "Proceedings of the 9th International Conference on Ultimate Integration on Silicon", (2008), ISBN: 978-1-4244-1730-8, 93 - 96.

971. V. Sverdlov, H. Kosina, S. Selberherr:
"Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Cork; 23.01.2008 - 25.01.2008; in "Proceedings of the 4th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2008), 41 - 42.

970. M. Karner, O. Baumgartner, M. Pourfath, M. Vasicek, H. Kosina:
"Investigation of a MOSCAP Using NEGF";
Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) .

969. R. Orio, H. Ceric, S. Selberherr:
"Strain-Induced Anisotropy of Electromigration in Copper Interconnect";
Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) .

968. V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr:
"Two-Band k·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility";
Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) .

967. M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser:
"A 2D-Non-Parabolic Six Moments Model";
Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) .

966. S. Vitanov, V. Palankovski:
"Normally-Off AlGaN/GaN HEMTs with InGaN Cap Layer: A Theoretical Study";
Poster: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) doi:10.1109/ISDRS.2007.4422390.

965. T. Grasser, B. Kaczer, Ph. Hehenberger, W. Gös, R. Connor, H. Reisinger, W. Gustin, C. Schlünder:
"Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability";
Talk: International Electron Devices Meeting (IEDM), Washington, DC, USA; 10.12.2007 - 12.12.2007; in "2007 International Electron Devices Meeting (IEDM) Technical Digest", (2007), ISBN: 1-4244-1508-x, 801 - 804 doi:10.1109/IEDM.2007.4419069.

964. M. Pourfath, H. Kosina, S. Selberherr:
"The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance";
Talk: International Symposium on Advanced Nanodevices and Nanotechnology (ISANN2007), Waikoloa, Hawaii; 02.12.2007 - 07.12.2007; in "International Symposium on Advanced Nanodevices and Nanotechnology", (2007), 37 - 38.

963. R. Heinzl, G. Mach, P. Schwaha, S. Selberherr:
"Labtool - A Managing Software for Computer Courses";
Talk: The European Simulation and Modelling Conference (ESM), Malta; 24.10.2007 - 27.10.2007; in "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6, 488 - 492.

962. R. Heinzl, G. Mach, P. Schwaha, S. Selberherr:
"A Performance Test Platform";
Talk: The European Simulation and Modelling Conference (ESM), Malta; 22.10.2007 - 24.10.2007; in "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6, 483 - 487.

961. P. Schwaha, R. Heinzl, G. Mach, C. Pogoreutz, S. Fister, S. Selberherr:
"Electro-Biological Simulation using a Web Front-End";
Talk: The European Simulation and Modelling Conference (ESM), Malta; 22.10.2007 - 24.10.2007; in "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6, 493 - 495.

960. F. Stimpfl, R. Heinzl, P. Schwaha, S. Selberherr:
"A Multi-Mode Mesh Generation Approach for Scientific Computing";
Talk: The European Simulation and Modelling Conference (ESM), Malta; 22.10.2007 - 24.10.2007; in "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6, 506 - 513.

959. V. Sverdlov, G. Karlowatz, H. Kosina, S. Selberherr:
"Two-Band k.p Model for the Conduction Band in Silicon";
Talk: The European Simulation and Modelling Conference (ESM), Malta; 22.10.2007 - 24.10.2007; in "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6, 220 - 224.

958. W. Gös, T. Grasser:
"Charging and Discharging of Oxide Defects in Reliability Issues";
Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 15.10.2007 - 18.10.2007; in "2007 IEEE International Integrated Reliability Workshop Final Report", (2007), ISBN: 1-4244-1171-8, 27 - 32.

957. T. Grasser, P.-J. Wagner, Ph. Hehenberger, W. Gös, B. Kaczer:
"A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability";
Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 15.10.2007 - 18.10.2007; in "2007 IEEE International Integrated Reliability Workshop Final Report", (2007), ISBN: 1-4244-1171-8, 6 - 11.

956. S. Vitanov, V. Palankovski, S. Murad, T. Rödle, R. Quay, S. Selberherr:
"Predictive Simulation of AlGaN/GaN HEMTs";
Talk: IEEE Compound Semiconductor IC Symposium (CSICS), Portland; 14.10.2007 - 17.10.2007; in "IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest 2007", (2007), ISBN: 1-4244-1022-3, 131 - 134 doi:10.1109/CSICS07.2007.31.

955. M. Nedjalkov, D. Vasileska:
"Semi-Discrete 2D Wigner-Particle Approach";
Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 08.10.2007 - 10.10.2007; in "Book of Abstracts of the 12th International Workshop on Computational Electronics (IWCE)", (2007), 122 - 123.

954. R. Orio, H. Ceric, S. Selberherr:
"Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress";
Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 08.10.2007 - 10.10.2007; in "Book of Abstracts of the 12th International Workshop on Computational Electronics (IWCE)", (2007), 62 - 63.

953. V. Sverdlov, H. Kosina:
"Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory";
Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 08.10.2007 - 10.10.2007; in "Book of Abstracts of the 12th International Workshop on Computational Electronics (IWCE)", (2007), 92 - 93.

952. M. Vasicek, J. Cervenka, M. Karner, M. Wagner, T. Grasser:
"Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs";
Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 08.10.2007 - 10.10.2007; in "Book of Abstracts of the 12th International Workshop on Computational Electronics (IWCE)", (2007), 96 - 97.

951. V. Sverdlov, H. Kosina, S. Selberherr:
"Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon";
Talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod; 01.10.2007 - 05.10.2007; in "International Conference "Micro and Nanoelectronics - 2007" Book of Abstracts", (2007), Vol.O1-14, .

950. H. Ceric, A. Nentchev, E. Langer, S. Selberherr:
"Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth";
Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 37 - 40 doi:10.1007/978-3-211-72861-1_9.

949. J. Cervenka, H. Ceric, O. Ertl, S. Selberherr:
"Three-Dimensional Sacrificial Etching";
Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 433 - 436 doi:10.1007/978-3-211-72861-1_105.

948. O. Ertl, C. Heitzinger, S. Selberherr:
"Efficient Coupling of Monte Carlo and Level Set Methods for Topography Simulation";
Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 417 - 420 doi:10.1007/978-3-211-72861-1_101.

947. W. Gös, T. Grasser:
"First-Principles Investigation on Oxide Trapping";
Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 157 - 160 doi:10.1007/978-3-211-72861-1_38.

946. H. Kosina, O. Triebl, T. Grasser:
"Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions";
Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 317 - 320 doi:10.1007/978-3-211-72861-1_76.

945. L. Li, G. Meller, H. Kosina:
"Charge Injection Model in Organic Light-Emitting Diodes based on a Master Equation";
Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 377 - 380 doi:10.1007/978-3-211-72861-1_91.

944. G. Meller, L. Li, S. Holzer, H. Kosina:
"Dynamic Monte Carlo Simulation of an Amorphous Organic Device";
Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 373 - 376 doi:10.1007/978-3-211-72861-1_90.

943. A. Nentchev, S. Selberherr:
"On the Magnetic Field Extraction for On-Chip Inductance Calculation";
Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 349 - 352 doi:10.1007/978-3-211-72861-1_84.

942. M. Pourfath, H. Kosina:
"The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNT-FETs";
Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 309 - 312 doi:10.1007/978-3-211-72861-1_74.

941. V. Sverdlov, G. Karlowatz, E. Ungersböck, H. Kosina:
"Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter";
Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 329 - 332 doi:10.1007/978-3-211-72861-1_79.

940. M. Vasicek, M. Karner, E. Ungersböck, M. Wagner, H. Kosina, T. Grasser:
"Modeling of Macroscopic Transport Parameters in Inversion Layers";
Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 201 - 204 doi:10.1007/978-3-211-72861-1_48.

939. S. Vitanov, V. Palankovski, S. Murad, T. Rödle, R. Quay, S. Selberherr:
"Hydrodynamic Modeling of AlGaN/GaN HEMTs";
Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 273 - 276 doi:10.1007/978-3-211-72861-1_65.

938. V. Sverdlov:
"Enhancing Performance of Modern MOSFETs: Strain Engineering and Advanced Device Architectures";
Talk: International Conference Frontiers of Josephson Physics and Nanoscience (FJPN07), Palinuro, Italy; 23.09.2007 - 28.09.2007; in "7th International Conference Frontiers of Josephson Physics and Nanoscience", (2007), 63 - 64.

937. M. Nedjalkov, D. Vasileska, K. Raleva:
"Thermal Relaxation of Non-Equilibrium Electrons in Nanowires";
Talk: Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics (ETAI), Ohrid, Macedonia; 19.09.2007 - 21.09.2007; in "8th Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics", (2007), .

936. V. Sverdlov, H. Kosina, S. Selberherr:
"Conduction Band in Silicon: Numerical Versus Analytical Two-Band k·p Model";
Talk: Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics (ETAI), Ohrid, Macedonia; 19.09.2007 - 21.09.2007; in "8th Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics", (2007), 4 page(s) .

935. T. Grasser, B. Kaczer:
"Negative Bias Temperature Instability: Recoverable versus Permanent Degradation";
Talk: European Solid-State Device Research Conference (ESSDERC), München; 11.09.2007 - 13.09.2007; in "European Solid-State Device Research Conference", (2007), ISBN: 1-4244-1124-6, 127 - 130.

934. M. Pourfath, H. Kosina, S. Selberherr:
"The Role of Inelastic Electron-Phonon Interaction on the On-Current and Gate Delay Time of CNT-FETs";
Talk: European Solid-State Device Research Conference (ESSDERC), München; 11.09.2007 - 13.09.2007; in "European Solid-State Device Research Conference", (2007), ISBN: 1-4244-1123-8, 239 - 242.

933. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
"Effects of Shear Strain on the Conduction Band in Silicon: An Efficient Two-Band k.p Theory";
Talk: European Solid-State Device Research Conference (ESSDERC), München; 11.09.2007 - 13.09.2007; in "European Solid-State Device Research Conference", (2007), ISBN: 1-4244-1124-6, 386 - 389.

932. H. Ceric, S. Selberherr:
"Electromigration Modeling for Interconnect Structures in Microelectronics";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Rio de Janeiro; (invited) 03.09.2007 - 06.09.2007; in "ECS Transactions", (2007), ISBN: 978-1-56677-565-6, 295 - 304.

931. A. Nentchev, S. Selberherr:
"Three-Dimensional On-Chip Inductance and Resistance Extraction";
Talk: Sociedade Brasileira da Microeltronica 2007 (SBCCI 2007), Rio de Janeiro; 03.09.2007 - 06.09.2007; in "20th Symposium on Integrated Circuits and Systems Design", (2007), ISBN: 978-1-59593-910-4, 6 page(s) doi:10.1145/1284480.1284540.

930. R. Heinzl, P. Schwaha, S. Selberherr:
"Modern Concepts for High-Perfomance Scientific Computing - Library Centric Application Design";
Talk: International Conference on Software and Data Technologies (ICSOFT), Barcelona; 22.07.2007 - 25.07.2007; in "Proceedings of the 2nd ICSOFT 2007", (2007), ISBN: 978-989-8111-05-0, 100 - 107.

929. P. Schwaha, M. Schwaha, R. Heinzl, E. Ungersböck, S. Selberherr:
"Simulation Methodologies for Scientific Computing - Modern Application Design";
Talk: International Conference on Software and Data Technologies (ICSOFT), Barcelona; 22.07.2007 - 25.07.2007; in "Proceedings of the 2nd ICSOFT 2007", (2007), ISBN: 978-989-8111-07-4, 270 - 276.

928. V. Palankovski, M. Wagner, W. Heiss:
"Monte Carlo Simulation of Electron Transport in PbTe";
Talk: International Conference on Narrow Gap Semiconductors, Guildford; 08.07.2007 - 12.07.2007; in "The 13thInternational Conference on Narrow Gap Semiconductors", (2007), 50.

927. S. Vitanov, V. Palankovski:
"Monte Carlo Study of Transport Properties of InN";
Poster: International Conference on Narrow Gap Semiconductors, Guildford; 08.07.2007 - 12.07.2007; in "The 13th International Conference on Narrow Gap Semiconductors", (2007), 99.

926. W. Benger, G. Ritter, R. Heinzl:
"The Concepts of VISH";
Talk: High-End Visualization Workshop, Obergurgl; 18.06.2007 - 22.06.2007; in "Proceedings of the 4th High-End Visualization Workshop", (2007), ISBN: 978-3-86541-216-4, 28 - 41.

925. R. Heinzl, P. Schwaha, C. Giani, S. Selberherr:
"Modeling of Non-Trivial Data-Structures with a Generic Scientific Simulation Environment";
Talk: High-End Visualization Workshop, Obergurgl; 18.06.2007 - 22.06.2007; in "Proceedings of the 4th High-End Visualization Workshop", (2007), ISBN: 978-3-86541-216-4, 5 - 13.

924. P. Schwaha, C. Giani, R. Heinzl, S. Selberherr:
"Visualization of Polynomials Used in Series Expansions";
Talk: High-End Visualization Workshop, Obergurgl; 18.06.2007 - 22.06.2007; in "Proceedings of the 4th High-End Visualization Workshop", (2007), ISBN: 978-3-86541-216-4, 139 - 148.

923. L. Li, G. Meller, H. Kosina:
"Charge Injection Model for Organic Light-Emitting Diodes";
Talk: International Conference on Organic Electronics (ICOE), Eindhoven; 04.06.2007 - 07.06.2007; in "International Conference on Organic Electronics", (2007), .

922. P. Schwaha, R. Heinzl, G. Mach, C. Pogoreutz, S. Fister, S. Selberherr:
"A High Performance Webapplication for an Electro-Biological Problem";
Talk: 21st European Conference on Modelling and Simulation, Prag; 04.06.2007 - 06.06.2007; in "Proceedings 21st European Conference on Modelling and Simulation", (2007), ISBN: 978-0-9553018-2-7, 218 - 222 doi:10.7148/2007-0218.

921. H. Ceric, S. Selberherr:
"Electromigration in Interconnect Structures of Microelectronic Circuits";
Talk: Microelectroncs, Electronics, and Electronic Technologies (MIPRO), Opatija; (invited) 21.05.2007 - 25.05.2007; in "Microelectronics, Electronics, and Electronic Technologies (MEET)", (2007), ISBN: 978-953-233-032-8, 23 - 28.

920. O. Triebl, T. Grasser:
"Investigation of Vector Discretization Schemes for Box Volume Methods";
Talk: The Nanotechnology Conference and Trade Show, Santa Clara; 20.05.2007 - 24.05.2007; in "NSTI Nanotech Proceedings", (2007), Vol.3, ISBN: 1-4200-6184-4, 61 - 64.

919. O. Baumgartner, M. Karner, S. Holzer, M. Pourfath, T. Grasser, H. Kosina:
"Adaptive Energy Integration of Non-Equilibrium Green´s Functions";
Poster: The Nanotechnology Conference and Trade Show, Santa Clara; 19.05.2007 - 24.05.2007; in "NSTI Nanotech Proceedings", (2007), Vol.3, ISBN: 1-4200-6184-4, 145 - 148.

918. C. Heitzinger, Ch. Ringhofer, S. Selberherr:
"Investigations of the Potential Jump at the Surface of BioFETs Using a Multi-scale Model";
Talk: Meeting of the Electrochemical Society, Multi-Scale Simulations of Electrochemical Systems, Chicago; 06.05.2007 - 10.05.2007; in "211th ECS Meeting", (2007), Vol.0947, ISSN: 1091-8213, .

917. J. Cervenka, H. Ceric, S. Selberherr:
"Three-Dimensional Simulation of Sacrificial Etching";
Talk: Proceedings of SPIE - The International Society for Optical Engineering, Masapalomas; 02.05.2007 - 04.05.2007; in "Proceedings of SPIE", (2007), Vol.6589-6593, ISBN: 978-0-8194-6726-3, 65891L.1 - 65891L.9.

916. T. Grasser, W. Gös, V. Sverdlov, B. Kaczer:
"The Universality of NBTI Relaxation and its Implications for Modeling and Characterization";
Talk: International Reliability Physics Symposium (IRPS), Phoenix; 15.04.2007 - 19.04.2007; in "45th Annual International Reliability Physics Symposium", (2007), ISBN: 1-4244-0919-5, 268 - 280.

915. H. Ceric, E. Langer, S. Selberherr:
"Modeling of Residual Stresses in Thin Metal Films";
Poster: International Workshop on Stress-Induced Phenomena in Metallization, Kyoto, Japan; 04.04.2007 - 06.04.2007; in "9th International Workshop on Stress-Induced Phenomena in Metallization", (2007), 18.

914. H. Ceric, E. Langer, S. Selberherr:
"Three-Phase Model for the Volmer-Weber Crystal Growth";
Talk: Nanostructures and Carrier Interactions (NNCI), Atsugi, Japan; 20.02.2007 - 23.02.2007; in "Nanostructures and Carrier Interactions", (2007), 127.

913. V. Sverdlov, E. Ungersböck, H. Kosina:
"Influence of Uniaxial [110] Stress on Silicon Band Structure and Electron Low-Field Mobility in Ultra-Thin Body SOIs";
Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Leuven; 24.01.2007 - 26.01.2007; in "EUROSOI 2007", (2007), 39 - 40.

912. W. Grabinski, T. Grasser, G. Gildenblat, G.-J. Smit, M. Bucher, A. Aarts, A. Tajic, Y. S. Chauhan, A. Napieralski, T.A. Fjeldly, B. Iniguez, G. Iannaccone, M. Kayal, W. Posch, G. Wachutka, F. Prégaldiny, CH. Lallement, L. Lemaitre:
"MOS-AK: Open Compact Modeling Forum";
Talk: International Workshop on Compact Modeling (IWCM), Pacifico Yokohama, Japan; (invited) 23.01.2007 in "The 4th International Workshop on Compact Modeling", (2007), 1 - 11.

911. Ch. Hollauer, H. Ceric, G. van Barel, A. Witvrouw, S. Selberherr:
"Investigation of Intrinsic Stress Effects in Cantilever Structures";
Talk: IEEE Nano/Micro Engineered and Molecular Systems, Bangkok, Thailand; 16.01.2007 - 19.01.2007; in "Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems (CD ROM)", (2007), ISBN: 1-4244-0610-2, 4 page(s) .

910. S. Vitanov, V. Palankovski, R. Quay, E. Langer:
"Modeling of Electron Transport in GaN-based Materials and Devices";
Poster: 28th International Conference on the Physics of Semiconductors, Wien; 24.07.2006 - 28.07.2006; in "28th International Conference on the Physics of Semiconductors", (2007), 244.

909. T. Krishnamohan, C. Jungemann, D. Kim, E. Ungersböck, S. Selberherr, P. Wong, Y. Nishi, K. Saraswat:
"Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 11.12.2006 - 13.12.2006; in "2006 International Electron Devices Meeting (IEDM) Technical Digest", (2006), ISBN: 1-4244-0438-x, 937 - 940 doi:10.1109/IEDM.2006.346938.

908. L. Li, G. Meller, H. Kosina:
"Field-Dependent Effective Transport Energy in Organic Semiconductor";
Poster: Meeting on Molecular Electronics (ELECMOL), Grenoble; 11.12.2006 - 15.12.2006; in "3rd Meeting on Molecular Electronics", (2006), T2-PC18.

907. M. Pourfath, H. Kosina, S. Selberherr:
"A Comprehensive Study of Carbon Nanotube Based Transistors: The Effects of Geometrical, Interface Barrier, and Scattering Parameters";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 11.12.2006 - 13.12.2006; in "2006 International Electron Devices Meeting (IEDM) Technical Digest", (2006), ISBN: 1-4244-0438-x, 819 - 822 doi:10.1109/IEDM.2006.346739.

906. E. Ungersböck, H. Kosina, S. Selberherr:
"The Influence of Stress on Inversion Layer Mobility";
Talk: Advanced Heterostructure Workshop (AHW), Kona; (invited) 03.12.2006 - 08.12.2006; in "Abstracts Advanced Heterostructure Workshop", (2006), TH-2.

905. V. Palankovski, S. Vitanov, R. Quay:
"Field-Plate Optimization of AlGaN/GaN HEMTs";
Talk: IEEE Compound Semiconductor IC Symposium (CSICS), San Antonio; 12.11.2006 - 15.11.2006; in "IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest", (2006), ISBN: 1-4244-0126-7, 107 - 110 doi:10.1109/CSICS.2006.319926.

904. G. Karlowatz, E. Ungersböck, W. Wessner, H. Kosina, S. Selberherr:
"Analysis of Hole Transport in Arbitrarily Strained Germanium";
Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 29.10.2006 - 03.11.2006; in "210th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) .

903. M. Karner, S. Holzer, M. Vasicek, W. Gös, M. Wagner, H. Kosina, S. Selberherr:
"Numerical Analysis of Gate Stacks";
Talk: Meeting of the Electrochemical Society, High Dielectric Constant Gate Stacks, Cancun; 29.10.2006 - 03.11.2006; in "210th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) .

902. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations";
Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 29.10.2006 - 03.11.2006; in "210th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) .

901. M. Wagner, G. Span, S. Holzer, O. Triebl, T. Grasser:
"Power Output Improvement of SiGe Thermoelectric Generators";
Talk: Meeting of the Electrochemical Society (ECS), Cancun; 29.10.2006 - 03.11.2006; in "Meeting Abstracts 2006 Joint International Meeting", (2006), ISSN: 1091-8213, 1 page(s) .

900. R. Wittmann, S. Uppal, A. Hössinger, J. Cervenka, S. Selberherr:
"A Study of Boron Implantation into High Ge Content SiGe Alloys";
Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 29.10.2006 - 03.11.2006; in "210th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) .

899. R. Heinzl, M. Spevak, P. Schwaha, T. Grasser, S. Selberherr:
"Performance Analysis for High-Precision Interconnect Simulation";
Talk: European Simulation and Modeling Conference (ESMC), Toulouse; 23.10.2006 - 25.10.2006; in "The 2006 European Simulation and Modelling Conference", (2006), ISBN: 9077381-30-9, 113 - 116.

898. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Strain Engineering for CMOS Devices";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Shanghai; (invited) 23.10.2006 - 26.10.2006; in "2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (Part 1 of 3)", (2006), ISBN: 1-4244-0160-7, 124 - 127.

897. R. Heinzl, M. Spevak, P. Schwaha, S. Selberherr:
"A Generic Topology Library";
Talk: Annual ACM Conference on Object-Oriented Programming, Systems, Languages and Applications (OOPSLA), Portland; 22.10.2006 - 26.10.2006; in "OOPSLA Proceedings", (2006), ISSN: 1652-926x, 85 - 93.

896. M. Spevak, R. Heinzl, P. Schwaha, T. Grasser, S. Selberherr:
"A Generic Discretization Library";
Talk: Annual ACM Conference on Object-Oriented Programming, Systems, Languages and Applications (OOPSLA), Portland; 22.10.2006 - 26.10.2006; in "OOPSLA Proceedings", (2006), ISSN: 1652-926x, 95 - 100.

895. T. Grasser, W. Gös, B. Kaczer:
"Modeling of Dispersive Transport in the Context of Negative Bias Temperature Instability";
Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 16.10.2006 - 19.10.2006; in "2006 IEEE International Integrated Reliability Workshop Final Report", (2006), ISBN: 1-4244-0297-2, 5 - 10.

894. H. Kosina:
"Nanoelectronic Device Simulation Based on the Wigner Function Formalism";
Talk: International Workshop on Tera- and Nano-Devices: Physics and Modeling, Aizu-Wakamatsu; (invited) 16.10.2006 - 19.10.2006; in "IWTND06 Workbook", (2006), 26.

893. S. Vitanov, V. Palankovski, R. Quay, E. Langer:
"Two-Dimensional Numerical Simulation of AlGaN/GaN HEMTs";
Talk: Target Days (TARGET), Frascati; 16.10.2006 - 18.10.2006; in "TARGET Days 2006 Book of Proceedings", (2006), ISBN: 3-902477-07-5, 81 - 84.

892. V. Sverdlov, E. Ungersböck, H. Kosina:
"Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions";
NATO Advanced Research Workshop Nanoscaled Semiconductor-On-Insulator Structures and Devices, Sudak; 15.10.2006 - 19.10.2006; in "NATO Advanced Research Workshop Conference Abstracts", (2006), 77 - 78.

891. S. Holzer, M. Wagner, A. Sheikholeslami, M. Karner, G. Span, T. Grasser, S. Selberherr:
"An Extendable Multi-Purpose Simulation and Optimization Framework for Thermal Problems in TCAD Applications";
Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Nice; 27.09.2006 - 29.09.2006; in "Collection of Papers Presented at the 12th International Workshop on Thermal Investigation of ICs and Systems", (2006), ISBN: 2-9161-8704-9, 239 - 244.

890. A. Nentchev, J. Cervenka, G. Marnaus, H. Enichlmair, S. Selberherr:
"Heatring - Smart Investigation of Temperature Impact on Integrated Circuit Devices";
Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Nice; 27.09.2006 - 29.09.2006; in "Collection of Papers Presented at the 12th International Workshop on Thermal Investigation of ICs and Systems", (2006), ISBN: 2-9161-8704-9, 235 - 238.

889. O. Triebl, T. Grasser:
"Vector Discretization Schemes Based on Unstructured Neighbourhood Information";
Talk: International Semiconductor Conference CAS, Sinaia; 27.09.2006 - 29.09.2006; in "CAS 2006 Proceedings Vol. 2", (2006), ISBN: 1-4244-0109-7, 337 - 340.

888. S. Dhar, E. Ungersböck, M. Nedjalkov, V. Palankovski:
"Monte Carlo Simulation of the Electron Mobility in Strained Silicon";
Talk: International Scientific and Applied Science Conference (ET), Sozopol; 20.09.2006 - 22.09.2006; in "The Fifteenth International Scientific and Applied Science Conference Electronics ET'2006 Proceedings of the Conference Book 2", (2006), ISBN: 954-438-565-7, 169 - 173.

887. V. Palankovski, M. Hristov, P. Philippov:
"Two-Dimensional Physical AC-Simulation of GaAs HBTs";
Talk: International Scientific and Applied Science Conference (ET), Sozopol; 20.09.2006 - 22.09.2006; in "The Fifteenth International Scientific and Applied Science Conference Electronics ET'2006 Proceedings of the Conference Book 2", (2006), ISBN: 954-438-565-7, 164 - 168.

886. M. Pourfath, H. Kosina, S. Selberherr:
"Optimal Design for Carbon Nanotube Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Montreux; 19.09.2006 - 21.09.2006; in "Proceedings of the 36th European Solid-State Device Research Conference", (2006), ISBN: 1-4244-0301-4, 210 - 213.

885. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
"Orientation Dependence of the Low Field Mobility in Double- and Single-Gate SOI FETs";
Talk: European Solid-State Device Research Conference (ESSDERC), Montreux; 18.09.2006 - 22.09.2006; in "Proceedings of the 36th European Solid-State Device Research Conference", (2006), ISBN: 1-4244-0301-4, 178 - 181.

884. Ch. Hollauer, H. Ceric, S. Selberherr:
"Modeling of Intrinsic Stress Effects in Deposited Thin Films";
Talk: EUROSENSORS XX, Göteborg; 17.09.2006 - 20.09.2006; in "Eurosensors 20th Anniversary Vol. 1", (2006), ISBN: 91-631-9280-2, 324 - 325.

883. G. Meller, L. Li, S. Holzer, H. Kosina:
"Simulation of Carrier Injection and Propagation in Molecularly Disordered Systems";
Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Singapore; 11.09.2006 - 14.09.2006; in "Proceedings of the 6th International Conference on Numerical Simulation of Optoelectronic Devices", (2006), ISBN: 0-7803-9755-x, 1 - 2.

882. A. Sheikholeslami, S. Selberherr, F. Parhami, H. Puchner:
"Planarization of Passivation Layers during Manufacturing Processes of Image Sensors";
Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Singapore; 11.09.2006 - 14.09.2006; in "Proceedings of the 6th International Conference on Numerical Simulation of Optoelectronic Devices", (2006), ISBN: 0-7803-9755-x, 35 - 36.

881. M. Movahhedi, A. Nentchev, H. Ceric, A. Abdipour, S. Selberherr:
"A Finite Element Time-Domain Algorithm Based on the Alternating-Direction Implicit Method";
Talk: European Microwave Week (EUMW), Manchester; 10.09.2006 - 15.09.2006; in "European Microwave Week 2006 Book of Abstracts", (2006), ISBN: 2-9600551-6-0, 1 - 4.

880. H. Ceric, Ch. Hollauer, S. Selberherr:
"Three-Dimensional Simulation of Intrinsic Stress Build-Up in Thin Films";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 192 - 195 doi:10.1109/SISPAD.2006.282869.

879. S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
"Analytical Modeling of Electron Mobility in Strained Germanium";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 39 - 42 doi:10.1109/SISPAD.2006.282833.

878. T. Grasser, R. Entner, O. Triebl, H. Enichlmair:
"TCAD Modeling of Negative Bias Temperature Instability";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 330 - 333 doi:10.1109/SISPAD.2006.282902.

877. G. Karlowatz, E. Ungersböck, W. Wessner, H. Kosina:
"Full-Band Monte Carlo Analysis of Electron Transport in Arbitrary Strained Silicon";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 63 - 66 doi:10.1109/SISPAD.2006.282839.

876. M. Karner, E. Ungersböck, A. Gehring, S. Holzer, H. Kosina, S. Selberherr:
"Strain Effects on Quasi-Bound State Tunneling in Advanced SOI CMOS Technologies";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 314 - 317 doi:10.1109/SISPAD.2006.282898.

875. H. Kosina, V. Sverdlov, T. Grasser:
"Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 357 - 360 doi:10.1109/SISPAD.2006.282908.

874. L. Li, G. Meller, H. Kosina:
"Doping Dependent Conductivity in Organic Semiconductors";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 204 - 207 doi:10.1109/SISPAD.2006.282872.

873. M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park, S. Selberherr:
"The Effect of Electron-Phonon Interaction on the Static and Dynamic Response of CNTFETs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 208 - 211 doi:10.1109/SISPAD.2006.282873.

872. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 43 - 46 doi:10.1109/SISPAD.2006.282834.

871. M. Wagner, G. Span, S. Holzer, T. Grasser:
"Design Optimization of Large Area Si/SiGe Thermoelectric Generators";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 397 - 400 doi:10.1109/SISPAD.2006.282918.

870. R. Wittmann, A. Hössinger, J. Cervenka, S. Uppal, S. Selberherr:
"Monte Carlo Simulation of Boron Implantation into (100) Germanium";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 381 - 384 doi:10.1109/SISPAD.2006.282914.

869. M. Pourfath, H. Kosina:
"On the Effect of Electron-Phonon Interaction Parameters on the Performance of Carbon Nanotube Based Transistors";
Poster: Trends in Nanotechnology Conference (TNT), Grenoble; 04.09.2006 - 08.09.2006; in "Proceedings Trends in Nanotechnology", (2006), 2 page(s) .

868. P. Vitanov, S. Vitanov, V. Palankovski:
"Two-Dimensional Analysis of the Back-Side Contacts of Thin Silicon Solar Cells";
Poster: 21st European Photovoltaic Solar Energy Conference, Dresden; 04.09.2006 - 08.09.2006; in "21st European Photovoltaic Solar Energy Conference", (2006), ISBN: 3-936338-20-5, 1475 - 1478.

867. H. Kosina:
"Modeling of Electronic Transport Phenomena in Semiconductor Nanodevices";
Talk: The 4th International Nanotech Symposium & Exhibition, Seoul; (invited) 30.08.2006 - 01.09.2006; in "Program Book NANO KOREA 2006", (2006), .

866. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Modeling of Advanced Semiconductor Devices";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Ouro Preto; (invited) 28.08.2006 - 01.09.2006; in "ECS Transactions", (2006), ISBN: 1-56677-512-4, 207 - 216.

865. S. Vitanov, M. Nedjalkov, V. Palankovski:
"A Monte Carlo Model of Piezoelectric Scattering in GaN";
Talk: International Conference on Numerical Methods and Applications (NM&A), Borovets; 20.08.2006 - 24.08.2006; in "Sixth International Conference on Numerical Methods and Applications Abstracts", (2006), B-75.

864. P. Vitanov, N. LeQuang, A. Harizanova, O. Nichiporuk, T. Ivanova, S. Vitanov, V. Palankovski:
"New Surface Passivation and Local Contacts on the Backside for thin mc-Si Solar Cells";
Talk: World Renewable Energy Congress (WREC), Firenze; 19.08.2006 - 25.08.2006; in "World Renewable Energy Congress IX Book of Abstracts", (2006), ISBN: 978-0-08-045056-8, 564.

863. H. Ceric, J. Cervenka, E. Langer, S. Selberherr:
"Moving Boundary Applications in Process and Interconnect TCAD";
Talk: Mini-Workshop on Anisotropic Motion Laws, Oberwolfach; 13.08.2006 - 19.08.2006; in "Proceedings Mini-Workshop on Anisotropic Motion Laws", (2006), Vol.Report No.38/2006, 13 - 16.

862. G. Span, M. Wagner, S. Holzer, T. Grasser:
"Thermoelectric Power Conversion using Generation of Electron-Hole Pairs in Large Area p-n Junctions";
Talk: International Conference on Thermoelectrics, Vienna; 06.08.2006 - 10.08.2006; in "International Conference on Thermoelectrics", (2006), Vol.6, ISBN: 1-4244-0811-3, 23 - 28.

861. A. Sheikholeslami, F. Parhami, H. Puchner, S. Selberherr:
"Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers";
Talk: International Conference on Nanoscience and Technology (ICNT), Basel; 30.07.2006 - 04.08.2006; in "International Conference on Nanoscience and Technology (ICNT 2006)", (2006), ISBN: 3-905084-71-6, 163 - 164.

860. K. Riedling, S. Selberherr:
"A Web-Based Publication Database for Performance Evaluation and Research Documentation";
Talk: International Conference for Engineering Education (ICEE), San Juan, Puerto Rico; 23.07.2006 - 28.07.2006; in "Proceedings of the ICEE 2006", (2006), ISBN: 1-58874-648-8, R2F-5 - R2F-10.

859. K. Riedling, S. Selberherr:
"A Flexible Web-Based Publication Database";
Talk: F. Malpica, A. Tremante, F. Welsch (ed); International Conference on Education and Information Systems: Technologies and Applications (EISTA), Orlando, Florida, USA; 20.07.2006 - 23.07.2006; in "Proceedings Volume 1 of the 4th International Conference on Education and Information Systems: Technologies and Applications (EISTA 2006)", (2006), ISBN: 980-6560-79-5, 262 - 267.

858. S. Holzer, M. Wagner, L. Friembichler, E. Langer, T. Grasser, S. Selberherr:
"A Multi-Purpose Optimization Framework for TCAD Applications";
Talk: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 10.07.2006 - 14.07.2006; in "ICCAM 2006 Abstracts of Talks", (2006), 76.

857. P. Schwaha, R. Heinzl, M. Spevak, T. Grasser:
"A Generic Approach to Scientific Computing";
Talk: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 10.07.2006 - 14.07.2006; in "ICCAM 2006 Abstracts of Talks", (2006), 137.

856. M. Spevak, R. Heinzl, P. Schwaha, T. Grasser:
"Automatic Linearization using Functional Programming for Scientific Computing";
Talk: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 10.07.2006 - 14.07.2006; in "ICCAM 2006 Abstracts of Talks", (2006), 147.

855. G. Meller, L. Li, S. Holzer, H. Kosina:
"Electron Kinetics in Disordered Organic Semiconductors";
Poster: ACS/IEEE/MRS Annual Organic Microelectronics Workshop, Toronto; 09.07.2006 - 12.07.2006; in "Abstracts 2nd Annual Organic Microelectronics Workshop", (2006), 42.

854. H. Ceric, Ch. Hollauer, S. Selberherr:
"Simulation of Texture Development Caused Stress Build-Up in Electroplated Copper Lines";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 03.07.2006 - 07.07.2006; in "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2006), ISBN: 1-4244-0206-9, 359 - 363.

853. R. Heinzl, P. Schwaha, M. Spevak, T. Grasser:
"Performance Aspects of a DSEL for Scientific Computing with C++";
Talk: Workshop on Parallel Object-Oriented Scientific Computing (POOSC), Nantes; 03.07.2006 - 07.07.2006; in "Proceedings of the POOSC Conference", (2006), 37 - 41.

852. S. Holzer, Ch. Hollauer, H. Ceric, M. Karner, T. Grasser, E. Langer, S. Selberherr:
"Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 03.07.2006 - 07.07.2006; in "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9, 154 - 157.

851. R. Wittmann, H. Puchner, H. Ceric, S. Selberherr:
"Impact of Random Bit Values on NBTI Lifetime of an SRAM Cell";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 03.07.2006 - 07.07.2006; in "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9, 41 - 44.

850. R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer:
"Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 26.06.2006 - 28.06.2006; in "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts", (2006), 96 - 97.

849. S. Holzer, A. Sheikholeslami, M. Karner, T. Grasser:
"Comparison of Deposition Models for TEOS CVD Process";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 26.06.2006 - 28.06.2006; in "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts", (2006), 158 - 159.

848. M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr:
"VSP-A Gate Stack Analyzer";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 26.06.2006 - 28.06.2006; in "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Program and Abstracts", (2006), 101 - 102.

847. T. Grasser, S. Selberherr:
"Modeling of Negative Bias Temperature Instability";
Talk: Symposium Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI ERA, Warszawa; (invited) 25.06.2006 - 28.06.2006; in "Abstracts 7th Symposium Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI ERA", (2006), 1 - 2.

846. R. Heinzl, M. Spevak, P. Schwaha, T. Grasser:
"A High Performance Generic Scientific Simulation Environment";
Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 18.06.2006 - 21.06.2006; in "Proceedings of the PARA Conference", (2006), 61.

845. P. Schwaha, R. Heinzl, M. Spevak, T. Grasser:
"Advanced Equation Processing for TCAD";
Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 18.06.2006 - 21.06.2006; in "Proceedings of the PARA Conference", (2006), 64.

844. M. Spevak, R. Heinzl, P. Schwaha, T. Grasser:
"A Computational Framework for Topological Operations";
Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 18.06.2006 - 21.06.2006; in "Proceedings of the PARA Conference", (2006), 57.

843. M. Pourfath, H. Kosina, S. Selberherr:
"Optimizing the Performance of Carbon Nanotube Transistors";
Poster: IEEE Conference on Nanotechnology (IEEE-NANO), Cincinnati; 17.06.2006 - 20.06.2006; in "Sixth IEEE Conference on Nanotechnology, Vol.2", (2006), ISBN: 1-4244-0078-3, 520 - 523.

842. S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
"Electron Mobility Model for <110> Stressed Si Including Strain-Dependent Mass";
Poster: Silicon Nanoelectronics Workshop, Honolulu; 11.06.2006 - 12.06.2006; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 153 - 154.

841. R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer:
"Influence of Interface and Oxide Traps on Negative Bias Temperature Instability";
Poster: Silicon Nanoelectronics Workshop, Honolulu; 11.06.2006 - 12.06.2006; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 163 - 164.

840. M. Karner, A. Gehring, S. Holzer, M. Wagner, H. Kosina:
"Continuum Versus Quasi-Bound State Tunneling in Novel Device Architectures";
Poster: Silicon Nanoelectronics Workshop, Honolulu; 11.06.2006 - 12.06.2006; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 161 - 162.

839. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
"Comparative Study of Low-Field Mobilities in Double- and Single-Gate Ultra-Thin Body SOI for Different Substrate Orientations";
Talk: Silicon Nanoelectronics Workshop, Honolulu; 11.06.2006 - 12.06.2006; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 17 - 18.

838. G. Ferrari, C. Jacoboni, M. Nedjalkov, A. Asenov:
"Introducing Energy Broadening in Semiclassical Monte Carlo Simulations";
Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 17 - 18.

837. M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, H. Kosina, T. Grasser, S. Selberherr:
"VSP - A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 255 - 256.

836. L. Li, G. Meller, H. Kosina:
"Percolation Current in Organic Semiconductors";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 161 - 162.

835. M. Nedjalkov, D. Vasileska, E. Atanassov, V. Palankovski:
"Ultrafast Wigner Transport in Quantum Wires";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 285 - 286.

834. M. Pourfath, H. Kosina, S. Selberherr:
"Dissipative Transport in CNTFETs";
Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 345 - 346.

833. M. Pourfath, H. Kosina, S. Selberherr:
"Tunneling-CNTFETs";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 291 - 292.

832. V. Suvorov, A. Hössinger, Z. Djuric:
"A Novel Approach to Three-Dimensional Semiconductor Process Simulation: Application to Thermal Oxidation";
Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 3 - 4.

831. V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr:
"Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices";
Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 29 - 30.

830. E. Ungersböck, S. Dhar, G. Karlowatz, H. Kosina, S. Selberherr:
"Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 141 - 142.

829. M. Wagner, T. Grasser, M. Karner, H. Kosina:
"Quantum Correction for DG MOSFETs";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 87 - 88.

828. R. Heinzl, M. Spevak, P. Schwaha, T. Grasser:
"High Performance Process and Device Simulation with a Generic Environment";
Talk: Iranian Conference on Electrical Engineering (ICEE), Tehran; 16.05.2006 - 18.05.2006; in "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 4 page(s) .

827. M. Pourfath, H. Kosina, S. Selberherr:
"On the Effect of Scattering on the Performance of Carbon Nanotube Field-Effect Transistors";
Talk: Iranian Conference on Electrical Engineering (ICEE), Tehran; 16.05.2006 - 18.05.2006; in "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 5 page(s) .

826. A. Sheikholeslami, R. Heinzl, S. Holzer, C. Heitzinger, M. Spevak, M. Leicht, O. Häberlen, J. Fugger, F. Badrieh, F. Parhami, H. Puchner, T. Grasser, S. Selberherr:
"Applications of Two- and Three-Dimensional General Topography Simulator in Semiconductor Manufacturing Processes";
Talk: Iranian Conference on Electrical Engineering (ICEE), Tehran; 16.05.2006 - 18.05.2006; in "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 4 page(s) .

825. S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr:
"A Tensorial High-Field Electron Mobility Model for Strained Silicon";
Poster: International SiGe Technology and Device Meeting (ISTDM), Princeton; 15.05.2006 - 17.05.2006; in "2006 International SiGe Technology and Device Meeting Conference Digest", (2006), ISBN: 1-4244-0461-4, 72 - 73.

824. M. Wagner, G. Span, T. Grasser:
"Thermoelectric Power Generation Using Large Area Si/SiGe pn-Junctions With Varying Ge-Content";
Talk: International SiGe Technology and Device Meeting (ISTDM), Princeton; 15.05.2006 - 17.05.2006; in "2006 International SiGe Technology and Device Meeting Conference Digest", (2006), ISBN: 1-4244-0461-4, 216 - 217.

823. S. Holzer, S. Selberherr:
"Optimization Issue in Interconnect Analysis";
Talk: International Conference on Microelectronics (MIEL), Beograd; (invited) 14.05.2006 - 17.05.2006; in "Proceedings International Conference on Microelectronics (MIEL)", (2006), ISBN: 1-4244-0116-x, 465 - 470.

822. R. Heinzl, M. Spevak, P. Schwaha, T. Grasser:
"A Generic Scientific Simulation Environment for Multidimensional Simulation in the Area of TCAD";
Poster: The Nanotechnology Conference and Trade Show, Boston; 07.05.2006 - 11.05.2006; in "NSTI Nanotech Proceedings", (2006), ISBN: 0-9767985-8-1, 526 - 529.

821. R. Heinzl, M. Spevak, P. Schwaha:
"A Novel High Performance Approach for Technology Computer Aided Design";
Talk: Student Electrical Engineering, Information and Communication Technologies (STUDENT EEICT), Brünn; 27.04.2006 in "Proceedings of the 12th Conference Student EEICT 2006", (2006), Vol.Vol.4, ISBN: 80-214-3163-6, 446 - 450.

820. R. Heinzl, M. Spevak, P. Schwaha, T. Grasser:
"Multidimensional and Multitopological TCAD with a Generic Scientific Simulation Environment";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; 26.04.2006 - 28.04.2006; in "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0042-2, 173 - 176.

819. P. Schwaha, R. Heinzl, W. Brezna, J. Smoliner, H. Enichlmair, R. Minixhofer, T. Grasser:
"Leakage Current Analysis of a Real World Silicon-Silicon Dioxide Capacitance";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; 26.04.2006 - 28.04.2006; in "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0042-2, 365 - 370.

818. V. Sverdlov, H. Kosina, S. Selberherr:
"Current Flow in Upcoming Microelectronic Devices";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; (invited) 26.04.2006 - 28.04.2006; in "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0041-4, 3 - 8.

817. R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer:
"Investigation of NBTI Recovery During Measurement";
Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 17.04.2006 - 21.04.2006; in "San Francisco 2006 MRS Meeting Abstracts", (2006), 110 - 111.

816. M. Karner, M. Wagner, T. Grasser, H. Kosina:
"A Physically Based Quantum Correction Model for DG MOSFETs";
Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 17.04.2006 - 21.04.2006; in "San Francisco 2006 MRS Meeting Abstracts", (2006), 104 - 105.

815. M. Spevak, R. Heinzl, P. Schwaha, T. Grasser:
"Process and Device Simulation With a Generic Scientific Simulation Environment";
Talk: International Conference on Microelectronics (MIEL), Beograd; 14.04.2006 - 17.04.2006; in "Proceedings International Conference on Microelectronics (MIEL)", (2006), ISBN: 1-4244-0116-x, 475 - 478.

814. V. Sverdlov, E. Ungersböck, H. Kosina:
"Mobility for High Effective Field in Double-Gate and Single-Gate SOI for Different Substrate Orientations";
Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Grenoble; 08.03.2006 - 10.03.2006; in "EUROSOI 2006 Second Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits", (2006), 133 - 134.

813. S. Selberherr:
"Tools, Methodologies and Scientific Issues for the Modeling of Advanced Semiconductor Devices";
Talk: Workshop on Semiconductors and Micro- & Nano-Technology (SEMINATEC), Campinas; (invited) 09.02.2006 - 10.02.2006; in "Abstracts of Workshop on Semiconductors and Micro- & Nano-Technology", (2006), 12 - 15.

812. T.V. Gurov, E. Atanassov, M. Nedjalkov, V. Palankovski:
"Monte Carlo Method for Modeling of Electron Transport in Quantum Wires";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3, 13-1 - 13-8.

811. R. Heinzl, P. Schwaha, M. Spevak, T. Grasser:
"Concepts for High Performance Generic Scientific Computing";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3, 4-1 - 4-9.

810. G. Karlowatz, W. Wessner, H. Kosina:
"Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3, 4-1 - 4-6.

809. V. Palankovski, A. Marchlewski, E. Ungersböck, S. Selberherr:
"Identification of Transport Parameters for Gallium Nitride Based Semiconductor Devices";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3, 14-1 - 14-9.

808. M. Spevak, R. Heinzl, P. Schwaha, T. Grasser:
"Simulation of Microelectronic Structures Using A Posteriori Error Estimation and Mesh Optimization";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3, 5-1 - 5-8.

807. V. Sverdlov, H. Kosina, S. Selberherr:
"Current Transport in Nanoelectronic Semiconductor Devices";
Talk: IEEE Conference on Emerging Technologies - Nanoelectronics (NanoSingapore), Singapore; (invited) 10.01.2006 - 13.01.2006; in "Proceedings IEEE Conference on Emerging Technologies - Nanoelectronics", (2006), ISBN: 0-7803-9358-9, 490 - 495.

806. L. Li, H. Kosina:
"An Analytical Model for Organic Thin Film Transistors";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; 19.12.2005 - 21.12.2005; in "Proceedingd of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits", (2005), ISBN: 0-7803-9339-2, 571 - 574.

805. G. Meller, L. Li, H. Kosina:
"Kinetic Monte Carlo Simulation of Molecularly Doped Organic Semiconductors";
Poster: Meeting on Molecular Electronics (ELECMOL), Grenoble; 19.12.2005 - 21.12.2005; in "Second Meeting on Molecular Electronics", (2005), 107.

804. V. Sverdlov, H. Kosina, S. Selberherr:
"Modeling Current Transport in Ultra-Scaled Field Effect Transistors";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; (invited) 19.12.2005 - 21.12.2005; in "Proceedings of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits", (2005), ISBN: 0-7803-9339-2, 385 - 390.

803. S. Dhar, G. Karlowatz, E. Ungersböck, H. Kosina, S. Selberherr:
"Modeling of Velocity-Field Characteristics in Strained Silicon";
Poster: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; 13.12.2005 - 17.12.2005; in "Proceedings of the XIII International Workshop on Physics of Semiconductor Devices", (2005), Vol.Vol. 2, ISBN: 81-7764-947-7, 1060 - 1063.

802. S. Holzer, S. Selberherr:
"Material Parameter Identification for Interconnect Analysis";
Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; (invited) 13.12.2005 - 17.12.2005; in "Proceedings of the XIII International Workshop on Physics of Semiconductor Devices", (2005), Vol.Vol. 2, ISBN: 81-7764-946-9, 635 - 641.

801. M. Wagner, M. Karner, T. Grasser:
"Quantum Correction Models for Modern Semiconductor Devices";
Poster: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; 13.12.2005 - 17.12.2005; in "Proceedings of the XIII International Workshop on Semiconductor Devices", (2005), Vol.Vol. 1, 458 - 461.

800. M. Pourfath, H. Kosina, S. Selberherr:
"Rigorous Modeling of Carbon Nanotube Field Effect Transistors";
Poster: International Conference on New Phenomena in Mesoscopic Structures, Maui; 27.11.2005 - 02.12.2005; in "Abstracts Collection Seventh International Conference on New Phenomena in Mesoscopic Systems Fifth International Conference on Surface and Interfaces in Mesoscopic Devices", (2005), 155 - 156.

799. R. Heinzl, P. Schwaha, M. Spevak, T. Grasser:
"Adaptive Mesh Generation for TCAD with Guaranteed Error Bounds";
Talk: European Simulation and Modeling Conference (ESMC), Porto; 26.10.2005 - 28.10.2005; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8, 425 - 429.

798. E. Al-Ani, R. Heinzl, P. Schwaha, T. Grasser, S. Selberherr:
"Three-Dimensional State-Of-The-Art Topography Simulation";
Talk: European Simulation and Modeling Conference (ESMC), Porto; 24.10.2005 - 26.10.2005; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8, 430 - 432.

797. A. Nentchev, R. Sabelka, W. Wessner, S. Selberherr:
"On Chip Interconnect Simulation of Parasitic Capacitances in Periodic Structures";
Talk: European Simulation and Modeling Conference (ESMC), Porto; 24.10.2005 - 26.10.2005; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), 420 - 424.

796. P. Schwaha, R. Heinzl, W. Brezna, J. Smoliner, H. Enichlmair, R. Minixhofer, T. Grasser:
"Fully Three-Dimensional Analysis of Leakage Current in Non-Planar Oxides";
Talk: European Simulation and Modeling Conference (ESMC), Porto; 24.10.2005 - 26.10.2005; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8, 469 - 473.

795. M. Spevak, T. Grasser:
"Discretisation Schemes For Macroscopic Transport Equations on Non-Cartesian Coordinate Systems";
Talk: European Simulation and Modeling Conference (ESMC), Porto; 24.10.2005 - 26.10.2005; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8, 474 - 478.

794. R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring, S. Selberherr:
"Impact of NBTI-driven Parameter Degradation on Lifetime of a 90nm p-MOSFET";
Poster: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 17.10.2005 - 20.10.2005; in "2005 IEEE International Integrated Reliability Workshop Final Report", (2005), ISBN: 0-7803-8992-1, 99 - 102.

793. Ch. Hollauer, H. Ceric, S. Selberherr:
"Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress";
Talk: Meeting of the Electrochemical Society, Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Los Angeles; 16.10.2005 - 21.10.2005; in "208th ECS Meeting", (2005), ISSN: 1091-8213, 1 page(s) .

792. M. Karner, A. Gehring, S. Holzer, H. Kosina, S. Selberherr:
"Efficient Calculation of Quasi-Bound State Tunneling through Stacked Dielectrics";
Talk: Meeting of the Electrochemical Society (ECS), Los Angeles; 16.10.2005 - 21.10.2005; in "208th ECS Meeting", (2005), Vol.1119, ISSN: 1091-8213, 1 page(s) .

791. A. Nentchev, R. Sabelka, S. Selberherr:
"Simplification of Spacial Structures by Simulation with Periodic Boundary Conditions";
Talk: VLSI Multilevel Interconnection Conference (VMIC), Fremont; 03.10.2005 - 06.10.2005; in "2005 Proceedings Twenty Second International VLSI Multilevel Interconnection Conference", (2005), 547 - 552.

790. L. Li, G. Meller, H. Kosina:
"Temperature and Field-dependence of Hopping Conduction in Organic Semiconductors";
Poster: European Conference on Organic Electronics and Related Phenomena (ECOER), Winterthur; 27.09.2005 - 30.09.2005; in "3rd European Conference on Organic Electronics and Related Phenomena Book of Abstracts", (2005), 112 - 113.

789. G. Meller, L. Li, H. Kosina:
"Monte Carlo Simulation of Molecularly Doped Organic Semiconductors";
Talk: European Conference on Organic Electronics and Related Phenomena (ECOER), Winterthur; 27.09.2005 - 30.09.2005; in "3rd European Conference on Organic Electronics and Related Phenomena Book of Abstracts", (2005), 44 - 45.

788. H. Ceric, Ch. Hollauer, S. Selberherr:
"Microstructure and Stress Aspects of Electromigration Modeling";
Poster: International Workshop on Stress-Induced Phenomena in Metallization, Dresden; 12.09.2005 - 14.09.2005; in "8th International Workshop on Stress-Induced Phenomena in Metallization", (2005), P 17.

787. M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park, S. Selberherr:
"Improving DC and AC Characteristics of Ohmic Contact Carbon Nanotube Field Effect Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble; 12.09.2005 - 16.09.2005; in "Proceedings of ESSDERC 2005", (2005), Vol.CDROM ISBN: 0-7803-9204-3, ISBN: 0-7803-9203-5, 541 - 544.

786. V. Sverdlov, A. Gehring, H. Kosina, S. Selberherr:
"Tunneling and Intersubband Coupling in Ultra-Thin Body Double-Gate MOSFETs";
Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble; 12.09.2005 - 16.09.2005; in "Proceedings of ESSDERC 2005", (2005), Vol.CDROM ISBN: 0-7803-9204-3, ISBN: 0-7803-9203-5, 93 - 96.

785. S. Dhar, G. Karlowatz, E. Ungersböck, H. Kosina:
"Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained Silicon";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 223 - 226 doi:10.1109/SISPAD.2005.201513.

784. R. Entner, A. Gehring, H. Kosina, T. Grasser, S. Selberherr:
"Modeling of Tunneling Currents for Highly Degraded CMOS Devices";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 219 - 222 doi:10.1109/SISPAD.2005.201512.

783. R. Heinzl, T. Grasser:
"Generalized Comprehensive Approach for Robust Three-Dimensional Mesh Generation for TCAD";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 211 - 214 doi:10.1109/SISPAD.2005.201510.

782. Ch. Hollauer, H. Ceric, S. Selberherr:
"Three-Dimensional Simulation of Stress Dependent Thermal Oxidation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 183 - 186 doi:10.1109/SISPAD.2005.201503.

781. M. Karner, A. Gehring, H. Kosina, S. Selberherr:
"Efficient Calculation of Quasi-Bound State Tunneling in CMOS Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 35 - 38 doi:10.1109/SISPAD.2005.201466.

780. M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park:
"Geometry-dependence of the DC and AC Response of Ohmic Contact Carbon Nanotube Field Effect Transistor";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 91 - 94 doi:10.1109/SISPAD.2005.201480.

779. P. Schwaha, R. Heinzl, M. Spevak, T. Grasser:
"Coupling Three-Dimensional Mesh Adaptation with an A Posteriori Error Estimator";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 235 - 238 doi:10.1109/SISPAD.2005.201516.

778. A. Sheikholeslami, F. Parhami, R. Heinzl, E. Al-Ani, C. Heitzinger, F. Badrieh, H. Puchner, T. Grasser, S. Selberherr:
"Applications of Three-Dimensional Topography Simulation in the Design of Interconnect Lines";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 187 - 190 doi:10.1109/SISPAD.2005.201504.

777. G. Span, M. Wagner, T. Grasser:
"Thermoelectric Power Generation Using Large Area pn-Junctions";
Talk: European Conference on Thermoelectrics (ECT), Nancy; 01.09.2005 - 02.09.2005; in "The 3rd European Conference on Thermoelectrics Proceedings ECT2005", (2005), 72 - 75.

776. E. Ungersböck, H. Kosina:
"The Effect of Degeneracy on Electron Transport in Strained Silicon Inversion Layers";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 311 - 314 doi:10.1109/SISPAD.2005.201535.

775. W. Wessner, H. Ceric, J. Cervenka, S. Selberherr:
"Dynamic Mesh Adaptation for Three-Dimensional Electromigration Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 147 - 150 doi:10.1109/SISPAD.2005.201494.

774. R. Wittmann, A. Hössinger, S. Selberherr:
"Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 191 - 194 doi:10.1109/SISPAD.2005.201505.

773. R. Heinzl, M. Spevak, P. Schwaha, T. Grasser:
"A Novel Technique for Coupling Three Dimensional Mesh Adaption With An A Posteriori Error Estimator";
Talk: PhD Research in Microelectronics and Electronics (PRIME), Lausanne; 25.07.2005 - 28.07.2005; in "2005 PhD Research in Microelectronics and Electronics", (2005), Vol.Vol. 1, ISBN: 0-7803-9345-7, 175 - 178.

772. A. Sheikholeslami, S. Holzer, C. Heitzinger, M. Leicht, O. Häberlen, J. Fugger, T. Grasser, S. Selberherr:
"Inverse Modeling of Oxid Deposition Using Measurements of a TEOS CVD Process";
Talk: PhD Research in Microelectronics and Electronics (PRIME), Lausanne; 25.07.2005 - 28.07.2005; in "2005 PhD Research in Microelectronics and Electronics", (2005), Vol.Vol. 2, ISBN: 0-7803-9345-7, 279 - 282.

771. M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park, S. Selberherr:
"The Effect of Device Geometry on the Static and Dynamic Response of Carbon Nanotube Field Effect Transistors";
Talk: IEEE Conference on Nanotechnology (IEEE-NANO), Nagoya; 11.07.2005 - 15.07.2005; in "Proceedings of IEEE-NANO 2005", (2005), Vol.CDROM ISBN: 0-7803-9200-0, 4 page(s) .

770. A. Gehring, S. Selberherr:
"Current Transport Models for Nano-Scale Semiconductor Devices";
Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; (invited) 10.07.2005 - 13.07.2005; in "Proc. 9th World Multi-Conf.on Systemics, Cybernetics and Informatics", (2005), Vol.Vol. 6, ISBN: 980-6560-58-2, 366 - 371.

769. M. Karner, A. Gehring, H. Kosina:
"Efficient Calculation of Life Time Based Direct Tunneling through Stacked Dielectrics";
Talk: Modelling and Simulation of Electron Devices (MSED), Pisa; 04.07.2005 - 05.07.2005; in "15th Workshop on Modelling and Simulation of Electron Devices", (2005), 97 - 98.

768. M. Pourfath, H. Kosina, S. Selberherr:
"A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors";
Talk: Modelling and Simulation of Electron Devices (MSED), Pisa; 04.07.2005 - 05.07.2005; in "15th Workshop on Modelling and Simulation of Electron Devices", (2005), 95 - 96.

767. E. Ungersböck, H. Kosina:
"Monte Carlo Study of Electron Transport in Strained Silicon Inversion Layers";
Talk: Modelling and Simulation of Electron Devices (MSED), Pisa; 04.07.2005 - 05.07.2005; in "15th Workshop on Modelling and Simulation of Electron Devices", (2005), 10 - 11.

766. H. Ceric, V. Deshpande, Ch. Hollauer, S. Holzer, T. Grasser, S. Selberherr:
"Comprehensive Analysis of Vacancy Dynamics Due to Electromigration";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 27.06.2005 - 01.07.2005; in "Proceedings of the 12th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2005), ISBN: 0-7803-9301-5, 100 - 103.

765. T.V. Gurov, E. Atanasov, I. Dimov, V. Palankovski, S. Smirnov:
"Femtosecond Evolution of Spacially Inhomogeneous Carrier Excitations: Part II: Stochastic Approach and GRID Implementation";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 06.06.2005 - 10.06.2005; in "Book of Abstracts", (2005), 26 - 27.

764. H. Kosina, V. Sverdlov, Ch. Ringhofer, M. Nedjalkov, S. Selberherr:
"Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2005 - 10.06.2005; in "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), 36 - 37.

763. M. Nedjalkov, T.V. Gurov, H. Kosina, D. Vasileska, V. Palankovski:
"Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations: Part I: Kinetic Approach";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 06.06.2005 - 10.06.2005; in "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), 46.

762. M. Pourfath, W.J. Park, H. Kosina, S. Selberherr:
"Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2005 - 10.06.2005; in "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), 50 - 51.

761. V. Sverdlov:
"Shot noise suppression and enhancement in 2D Shot Noise Suppression and Enhancement at 2D Hopping and Single-Electron Arrays";
Talk: International Conference on Unsolved Problems of Noise (UPON), Gallipoli; (invited) 06.06.2005 - 10.06.2005; in "4-th International Conference on Unsolved Problems of Noise and Fluctuations in Physics, Biology & High Technology", (2005), 177 - 182.

760. Ch. Hollauer, S. Holzer, H. Ceric, S. Wagner, T. Grasser, S. Selberherr:
"Investigation of Thermo-Mechanical Stress in Modern Interconnect Layouts";
Talk: International Congress on Thermal Stresses (TS), Wien; 26.05.2005 - 29.05.2005; in "Proceedings of The Sixth International Congress on Thermal Stresses", (2005), Vol.Vol. 2, ISBN: 3-901167-12-9, 637 - 640.

759. G. Angelov, V. Palankovski, M. Hristov:
"Demonstration of a Slipstream Simulation Flow Including Device and Circuit Simulators";
Poster: ISSE 2005 - 28th International Spring Seminar on Electronics Technology, Wiener Neustadt; 19.05.2005 - 22.05.2005; in "ISSE 2005, 28th International Spring Seminar on Electronics Technology, Conference Program and Abstracts", (2005), Vol.39, ISBN: 3-85133036-6, 110 - 111.

758. G. Angelov, V. Palankovski, M. Hristov, P. Philippov:
"Demonstration of a Slipstream Simulation Flow Including Device and Circuit Simulators";
Poster: ISSE 2005 - 28th International Spring Seminar on Electronics Technology, Wiener Neustadt; 19.05.2005 - 22.05.2005; in "28th International Spring Seminar on Electronics Technology", (2005), ISBN: 0-7803-9324-4, 486 - 491 doi:10.1109/ISSE.2005.1491077.

757. S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser, S. Selberherr:
"Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress";
Talk: Proceedings of SPIE - The International Society for Optical Engineering, Sevilla; 09.05.2005 - 11.05.2005; in "VLSI Circuits and Systems II", (2005), ISBN: 0-8194-5832-5, 380 - 387.

756. S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"A Physically-Based Electron Mobility Model for Strained Si Devices";
Talk: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in "NSTI Nanotech Technical Proceedings", (2005), Vol.Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 13 - 16.

755. R. Entner, A. Gehring, H. Kosina, T. Grasser, S. Selberherr:
"Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices";
Talk: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in "NSTI Nanotech Technical Proceedings", (2005), Vol.Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 45 - 48.

754. S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, R. Entner, E. Langer, T. Grasser, S. Selberherr:
"Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis";
Poster: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in "NSTI Nanotech Technical Proceedings", (2005), Vol.Vol. 3 (CDROM ISBN: 0-9767985-4-9), ISBN: 0-9767985-2-2, 620 - 623.

753. C. Jungemann, T. Grasser, B. Neinhüs, B. Meinerzhagen:
"Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium";
Talk: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in "NSTI Nanotech Technical Proceedings", (2005), Vol.Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 25 - 28.

752. M. Pourfath, A. Gehring, B.-H. Cheong, W.J. Park, H. Kosina, S. Selberherr:
"Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration";
Talk: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in "NSTI Nanotech Technical Proceedings", (2005), Vol.Vol. 3 (CDROM ISBN: 0-9767985-4-9), ISBN: 0-9767985-2-2, 128 - 131.

751. R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring, S. Selberherr:
"Simulation of Dynamic NBTI Degradation for a 90 nm CMOS Technology";
Talk: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in "NSTI Nanotech Technical Proceedings", (2005), Vol.Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 29 - 32.

750. M. Pourfath, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr:
"High Performance Carbon Nanotube Field Effect Transistor with the Potential for Tera Level Integration";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Bologna; 07.04.2005 - 08.04.2005; in "ULIS 2005 6th International Conference on Ultimate Integration of Silicon Proceedings of the Conference", (2005), ISBN: 8890084707, 95 - 98.

749. A. Sheikholeslami, E. Al-Ani, R. Heinzl, C. Heitzinger, F. Parhami, F. Badrieh, H. Puchner, T. Grasser, S. Selberherr:
"Level Set Method Based General Topography Simulator and its Application in Interconnect Processes";
Poster: International Conference on Ultimate Integration of Silicon (ULIS), Bologna; 07.04.2005 - 08.04.2005; in "ULIS 2005 6th International Conference on Ultimate Integration of Silicon", (2005), ISBN: 8890084707, 139 - 142.

748. A. Gehring, V. Sverdlov, H. Kosina, S. Selberherr:
"Quantum Transport in Ultra-Scaled Double-gate MOSFETs: A Wigner Function-based Monte Carlo Approach";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada; 19.01.2005 - 21.01.2005; in "EUROSOI 2005 First Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits", (2005), 71 - 72.

747. H. Kosina, S. Selberherr:
"Device Simulation Demands of Upcoming Microelectronic Devices";
Talk: Advanced Workshop on Frontiers in Electronics (WOFE), Aruba; (invited) 17.12.2004 - 22.12.2004; in "Extended Abstracts of WOFE 2004", (2004), 6.

746. V. Palankovski, S. Dhar, H. Kosina, S. Selberherr:
"Improved Carrier Transport in Strained Si/Ge Devices";
Talk: Asia Pacific Microwave Conference (APMC), New Delhi; (invited) 15.12.2004 - 18.12.2004; in "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9, 4 page(s) .

745. S. Wagner, T. Grasser, S. Selberherr:
"Physical Modeling of Semiconductor Devices for Microwave Applications";
Talk: Asia Pacific Microwave Conference (APMC), New Delhi; (invited) 15.12.2004 - 18.12.2004; in "Asia Pacific Microwave Conference 2004. Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9, 4 page(s) .

744. W. Wessner, S. Wagner, T. Grasser, S. Selberherr:
"Meshing Aspects on Three-Dimensional Fin-Fet Device Simulations";
Talk: Asia Pacific Microwave Conference (APMC), New Delhi; 15.12.2004 - 18.12.2004; in "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9, 4 page(s) .

743. S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"Modeling of Electron Mobility in Strained Si Devices";
Talk: Semiconductor Advances for Future Electronics (SAFE), Veldhoven, Netherlands; 25.11.2004 - 26.11.2004; in "Proceedings of SAFE 2004", (2004), ISBN: 90-73461-43-x, 793 - 796 doi:10.13140/2.1.1839.7126.

742. A. Gehring, S. Selberherr:
"Gate Current Modeling for MOSFETs";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Punta Cana; (invited) 03.11.2004 - 05.11.2004; in "Proceedings of the ICCDCS 2004", (2004), ISBN: 0-7803-8777-5, 1 - 8.

741. A. Gehring, H. Kosina:
"Wigner-Function Based Simulation of Classic and Ballistic Transport in Scaled DG-MOSFETs Using the Monte Carlo Method";
Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 24.10.2004 - 27.10.2004; in "Book of Abstracts of the 10th International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 227 - 228 doi:10.1109/IWCE.2004.1407409.

740. A. Gehring, S. Selberherr:
"Evolution of Current Transport Models for Engineering Applications";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; (invited) 24.10.2004 - 27.10.2004; in "Book of Abstracts of the 10th International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 20 - 21 doi:10.1109/IWCE.2004.1407298.

739. T. Grasser, R. Kosik, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr:
"A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Devices";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 24.10.2004 - 27.10.2004; in "Book of Abstracts of the 10th International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 36 - 37 doi:10.1109/IWCE.2004.1407308.

738. C. Heitzinger, Ch. Ringhofer, S. Ahmed, D. Vasileska:
"Efficient Simulation of the Full Coulomb Interaction in Three Dimensions";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 24.10.2004 - 27.10.2004; in "Book of Abstracts of the 10th International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 24 - 25 doi:10.1109/IWCE.2004.1407300.

737. M. Pourfath, E. Ungersböck, A. Gehring, W. Park, B.-H. Cheong, H. Kosina, S. Selberherr:
"Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors";
Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 24.10.2004 - 27.10.2004; in "Book of Abstracts of the 10th International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 237 - 238 doi:10.1109/IWCE.2004.1407414.

736. A. Gehring, S. Selberherr:
"Gate Leakage Models for Device Simulation";
Talk: R. Huang, M. Yu, J. Liou, T. Hiramoto, C. Claeys (ed); International Conference on Solid State and Integrated Circuit Technology (ICSICT), Beijing; (invited) 18.10.2004 - 21.10.2004; in "7th International Conference on Solid-State and Integrated Circuits Technology Proceedings", (2004), Vol.Volume II, ISBN: 0-7803-8511-x, 971 - 976.

735. C. Heitzinger, Ch. Ringhofer, S. Ahmed, D. Vasileska:
"Accurate Three-Dimensional Simulation of Electron Mobility Including Electron-Electron and Electron-Dopant Interactions";
Talk: Meeting of the Electrochemical Society (ECS), Honolulu; 03.10.2004 - 08.10.2004; in "Proc. 206th Meeting of the Electrochemical Society", (2004), .

734. R. Wittmann, A. Hössinger, S. Selberherr:
"Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe";
Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Honolulu; 03.10.2004 - 08.10.2004; in "206th ECS Meeting", (2004), ISBN: 1-56677-420-9, 181 - 192.

733. M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr:
"Improving the Ambipolar Behavior of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Leuven; 21.09.2004 - 23.09.2004; in "Proceeding of the 34th European Solid-State Device Research Conference", (2004), ISBN: 0780384784, 429 - 432.

732. C. Heitzinger, Ch. Ringhofer, S. Ahmed, D. Vasileska:
"On the Efficient Simulation of Electron-Electron Interactions in Nanoscale MOSFETs";
Poster: Trends in Nanotechnology Conference (TNT), Segovia; 13.09.2004 - 17.09.2004; in "Proceedings Trends in Nanotechnology 2004", (2004), .

731. M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr:
"Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Talk: Nano and Giga Challenges in Microelectronics (NGCM), Krakau; 13.09.2004 - 17.09.2004; in "Nano and Giga Challenges in Microelectronics Book of Abstracts", (2004), 201.

730. T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 295 - 298 doi:10.1007/978-3-7091-0624-2_69.

729. H. Ceric, R. Sabelka, S. Holzer, W. Wessner, S. Wagner, T. Grasser, S. Selberherr:
"The Evolution of the Resistance and Current Density During Electromigration";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 331 - 334 doi:10.1007/978-3-7091-0624-2_78.

728. A. Gehring, S. Selberherr:
"On the Calculation of Quasi-Bound States and Their Impact on Direct Tunneling in CMOS Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 25 - 28 doi:10.1007/978-3-7091-0624-2_6.

727. T. Grasser, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr:
"Advanced Transport Models for Sub-Micrometer Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; (invited) 02.09.2004 - 04.09.2004; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 1 - 8 doi:10.1007/978-3-7091-0624-2_1.

726. T. Grasser, H. Kosina, S. Selberherr:
"On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 109 - 112 doi:10.1007/978-3-7091-0624-2_26.

725. A. Hössinger, R. Minixhofer, S. Selberherr:
"Full Three-Dimensional Analysis of a Non-Volatile Memory Cell";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 129 - 132 doi:10.1007/978-3-7091-0624-2_31.

724. H. Kosina:
"Advanced Transport Models for Nanodevices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; (invited) 02.09.2004 - 04.09.2004; in "From Sub-μm-CMOS to Nanotechnology SISPAD 2004 Companion Workshop", (2004), 35.