Conference Presentations
| 2087. | Ferdowsi, A., Függer, M., Salzmann, J., Schmid, U. (2024). A Hybrid Delay Model for Interconnected Multi-Input Gates. In 2023 26th Euromicro Conference on Digital System Design (DSD) (pp. 381–390), Golem, Albania. https://doi.org/10.1109/DSD60849.2023.00060 (reposiTUm) | |
| 2086. | Grasser, T., Feil, M., Waschneck, K., Reisinger, H., Berens, J., Waldhör, D., Vasilev, A., Waltl, M., Aichinger, T., Bockstedte, M., Gustin, W., Pobegen, G. (2024). A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. In 2024 IEEE International Reliability Physics Symposium (IRPS) (pp. 3B.1-1–3B.1-7), United States. https://doi.org/10.1109/IRPS48228.2024.10529465 (reposiTUm) | |
| 2085. | Waltl, M., Stampfer, B., Grasser, T. (2024). Advanced Extraction of Trap Parameters From Single-Defect Measurements. In 2023 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–5), United States. https://doi.org/10.1109/IIRW59383.2023.10477640 (reposiTUm) | |
| 2084. | Bendra, M., Pruckner, B., Lacerda de Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2024). Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance Through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling. In Proceedings 2024 Device Research Conference (DRC) (pp. 1–2), Maryland, United States. https://doi.org/10.1109/DRC61706.2024.10605512 (reposiTUm) | |
| 2083. | Stella, R., Leroch, S., Hössinger, A., Waldhör, D., Filipovic, L. (2024). Atomistic Study of 4h-SiC Using Ab Initio and Machine Learning Techniques. In PRiME 2024 October 6, 2024 - October 11, 2024 Honolulu, USA, Honolulu, HI, United States. https://doi.org/10.1149/MA2024-02201801mtgabs (reposiTUm) | |
| 2082. | Bamer, B., Leroch, S., Hossinger, A., Filipovic, L. (2024). Cluster-Based Semi-Empirical Model for Dopant Activation in Silicon Carbide. In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 1–4), San Jose, CA, United States. https://doi.org/10.1109/SISPAD62626.2024.10732978 (reposiTUm) | |
| 2081. | Bamer, B., Hoessinger, A., Filipovic, L. (2024). Cluster-Based Model for Dopant Activation in SiC. In MESS24: Microelectronic Systems Symposium (p. 47), Vienna, Austria. (reposiTUm) | |
| 2080. | Bamer, B., Leroch, S., Hoessinger, A., Filipovic, L. (2024). Cluster-Based Multivariate Spline Model for Dopant Activation in SiC. In AMaSiS 2024: Applied Mathematics and Simulation for Semiconductor Devices (p. 20), Berlin, Germany. (reposiTUm) | |
| 2079. | Filipovic, L. (2024). Efficient Multi-Scale Modeling of Semiconductor Device Fabrication. In The 5th International Congress on Advanced Materials Sciences and Engineering: Abstract Book (p. 40), Lovran, Croatia. (reposiTUm) | |
| 2078. | Gull, J., Filipovic, L., Kosina, H. (2024). Electron-Electron Scattering in Non-Parabolic Transport Models. In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 1–4), San Jose, CA, United States. https://doi.org/10.1109/SISPAD62626.2024.10733120 (reposiTUm) | |
| 2077. | Filipovic, L., Reiter, T., Piso, J., Kostal, R. (2024). Equipment-Informed Machine Learning-Assisted Feature-Scale Plasma Etching Model. In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 1–4), San Jose, CA, United States. https://doi.org/10.1109/SISPAD62626.2024.10733099 (reposiTUm) | |
| 2076. | Loesener, M., Zinsler, T., Stampfer, B., Wimmer, F., Ioannidis, E., Monga, U., Pflanzl, W., Minixhofer, R., Grasser, T., Waltl, M. (2024). Evaluation of the Robustness of the Defect-Centric Model for Defect Parameter Extraction From RTN Analysis. In 2024 Austrochip Workshop on Microelectronics (Austrochip), Vienna, Austria. https://doi.org/10.1109/Austrochip62761.2024.10716231 (reposiTUm) | |
| 2075. | Pruckner, B., Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2024). Field-Free Magnetization Switching in SOT-MRAM Devices With Noncollinear Antiferromagnets. In 2024 Austrochip Workshop on Microelectronics (Austrochip) (pp. 1–4), Vienna, Austria. https://doi.org/10.1109/Austrochip62761.2024.10716227 (reposiTUm) | |
| 2074. | Pruckner, B., Jorstad, N., Hadamek, T., Gös, W., Selberherr, S., Sverdlov, V. (2024). Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect. In Proceedings 2024 47th MIPRO ICT and Electronics Convention (MIPRO) (pp. 1584–1589), Opatija, Croatia. https://doi.org/10.1109/MIPRO60963.2024.10569617 (reposiTUm) | |
| 2073. | Pruckner, B., Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2024). Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices With Non-Collinear Antiferromagnets. In International Conference on Magnetism: Book of Abstracts (p. 1842), Bologna, Italy. (reposiTUm) | |
| 2072. | Kaczer, B., Degraeve, R., Franco, J., Grasser, T., Roussel, P., Bury, E., Weckx, P., Chasin, A., Tyaginov, S., Vandemaele, M., Grill, A., O'Sullivan, B., Diaz-Fortuny, J., Saraza-Canflanca, P., Waltl, M., Rinaudo, P., Zhao, Y., Kao, E., Asanovski, R., Catapano, E., Beckers, A., Vici, A., Truijen, B., Higashi, Y., Clima, S., Xiang, Y., Sangani, D., Panarella, L., Smets, Q., Knobloch, T., Waldhör, D., Van Troeye, B., Guo, Y., Kruv, A., Viswakarma, K., Gonzalez, M., Linten, D. (2024). Gate Oxide Reliability: Upcoming Trends, Challenges, and Opportunities. In 2024 IEEE Silicon Nanoelectronics Workshop (SNW) (pp. 3–4), United States. https://doi.org/10.1109/SNW63608.2024.10639245 (reposiTUm) | |
| 2071. | Reiter, T., Toifl, A., Kong, S., Hoessinger, A., Filipovic, L. (2024). Impact of Ion Energy and Yield in Oblique Ion Beam Etching Process for Blazed Gratings. In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 1–4), San Jose, CA, United States. https://doi.org/10.1109/SISPAD62626.2024.10733316 (reposiTUm) | |
| 2070. | Ruch, B., Padovan, V., Pogany, D., Ostermaier, C., Butej, B., Koller, C., Waltl, M. (2024). Influence of Hole Injection on Associated Recovery Phenomena in GaN-Based GITs Subjected to Hot Electron Trapping. In 2024 Austrochip Workshop on Microelectronics (Austrochip) (pp. 1–4), Vienna, Austria. https://doi.org/10.1109/Austrochip62761.2024.10716239 (reposiTUm) | |
| 2069. | Bendra, M., Lacerda de Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2024). Influence of Interface Exchange Coupling in Multilayered Spintronic Structures. In Proceedings 2024 47th MIPRO ICT and Electronics Convention (MIPRO) (pp. 1579–1583), Opatija, Croatia. https://doi.org/10.1109/MIPRO60963.2024.10569798 (reposiTUm) | |
| 2068. | Bendra, M., Lacerda de Orio, R., Selberherr, S., Wolfgang Goes, Sverdlov, V. (2024, May 25). Influence of Interface Exchange Coupling in Multilayered Spintronic Structures 47th MIPRO ICT and Electronics Convention (MIPRO 2024), Opatija, Croatia. (reposiTUm) | |
| 2067. | Bendra, M., Ender, J., Lacerda de Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2024). Interlayer Exchange Coupling for Enhanced Performance in Spin-Transfer Torque MRAM Devices. In 10th International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2024: Abstract Book (pp. 94–95), Athen, Greece. (reposiTUm) | |
| 2066. | Bendra, M., Lacerda de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2024). Investigating Reliability Issues in Multi-Layered STT-MRAM With Synthetic Antiferromagnets. In 2024 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapur, Singapore. https://doi.org/10.1109/IPFA61654.2024.10690971 (reposiTUm) | |
| 2065. | Leroch, S., Stella, R., Hössinger, A., Filipovic, L. (2024). MD Simulation of Epitaxial Recrystallization and Defect Structure of Al-Implanted 4h-SiC. In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 1–4), San Jose, CA, United States. https://doi.org/10.1109/SISPAD62626.2024.10733052 (reposiTUm) | |
| 2064. | Jørstad, N., Pruckner, B., Goes, W., Selberherr, S., Sverdlov, V. (2024). Magnetic Field Free SOT-MRAM Switching. In 2024 Workshop on Innovative Nanoscale Devices and Systems. Book of Abstracts (pp. 44–45), Kamuela, Hi, United States. (reposiTUm) | |
| 2063. | Pruckner, B., Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2024). Magnetic Spin Hall Induced Field-Free Magnetization Switching in SOT-MRAM Devices. In 10th International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2024: Abtract Book (pp. 154–155), Athen, Greece. (reposiTUm) | |
| 2062. | Filipovic, L. (2024). Merging Reactor and Feature Scales for Plasma Etch Modeling. In IEEE NANO 2024 Book of Abstracts (p. 120), Gijon, Spain. (reposiTUm) | |
| 2061. | Jorstad, N., Pruckner, B., Bendra, M., Goes, W., Sverdlov, V. (2024). Modeling Advanced Perpendicular MRAM Cells: Generating Spin Currents for Fast Field-Free Cell Switching. In The 5th International Congress on Advanced Materials Sciences and Engineering: Abstract Book (p. 46), Lovran, Croatia. (reposiTUm) | |
| 2060. | Gentles, A., Dehghani, M., Minixhofer, R., Khakbaz, P., Waldhor, D., Waltl, M. (2024). Modeling Next Generation Sensor Chips: Towards Predictive Band Structure Models for Quarternary III-V Semiconductor Alloys. In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), United States. https://doi.org/10.1109/SISPAD62626.2024.10732909 (reposiTUm) | |
| 2059. | Hu, Z., Filipovic, L., Li, J., Wang, L., Wu, Z., Chen, R., Wei, Y., Li, L. (2024). Modeling Non-Uniformity During Two-Step Dry Etching of Si/SiGe Stacks for Gate-All-Around FETs. In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 1–4), San Jose, CA, United States. https://doi.org/10.1109/SISPAD62626.2024.10733200 (reposiTUm) | |
| 2058. | Sverdlov, V., Jorstad, N., Bendra, M., Pruckner, B., Hadamek, T., Goes, W., Selberherr, S. (2024). Modeling Spin and Charge Transport in Magnetic Multilayers: From Emerging Memories to Terahertz Emitters. In Technical Program and Abstract Booklet: TeraTech 2024: The 11th International Symposium of Terahertz Related Devices and Technologies (pp. 13–14), Buffalo, NY, United States. (reposiTUm) | |
| 2057. | Filipovic, L. (2024). Modeling and Simulation of ALD in a Level Set Framework. In EFDS: Program Booklet: ALD for Industry (p. 24), Dresden, Germany. (reposiTUm) | |
| 2056. | Kosina, H., Gull, J. (2024, March 25). Modeling of Electron-Electron Scattering in Nanoelectronic Devices World Congress on Nanoscience and Nanotechnology, Barcelona, Spain. (reposiTUm) | |
| 2055. | Filipovic, L., Reiter, T. (2024). Multi-Scale Model for High Aspect Ratio TiN Etching in a Cl₂/Ar Inductively Coupled Plasma. In SICT 2024, Plasma Tech 2024 and Tribology 2024 Joint International Conferences: Book of Abstracts (p. 67), Vienna, Austria. (reposiTUm) | |
| 2054. | Filipovic, L., Bamer, B., Leroch, S., Reiter, T., Stella, R., Hoessinger, A. (2024). Multi-Scale Process TCAD for Advanced Semiconductor Fabrication. In MESS24: Microelectronic Systems Symposium (p. 37), Vienna, Austria. (reposiTUm) | |
| 2053. | Stephanie, M., Pham, L., Schindler, A., Waltl, M., Grasser, T., Schrenk, B. (2024). Neural Network With Optical Frequency-Coded ReLU. In Optical Fiber Communication Conference (OFC) 2024, United States. (reposiTUm) | |
| 2052. | Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2024). Optimization of Spin-Orbit Torque for Field-Free Switching of Ferromagnetic Trilayers. In International Conference on Magnetism: Book of Abstract (p. 1286), Bologna, Italy. (reposiTUm) | |
| 2051. | Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2024). Optimizing Unconventional Trilayer SOTs for Field-Free Switching. In 10th International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2024: Abstract Book (pp. 84–85), Athens, Greece. (reposiTUm) | |
| 2050. | Jorstad, N., Pruckner, B., Goes, W., Selberherr, S., Sverdlov, V. (2024). Out-Of-Plane Polarized Spin Current Generation for Field-Free Switching of Perpendicular SOT-MRAM. In Book of abstracts of the Device Research Conference (DRC-2024) (p. 143), Maryland, United States. (reposiTUm) | |
| 2049. | Prigann, S., Feil, M., Reisinger, H., Bissinger, J., Strasser, M., Waltl, M., Schlipf, J., Kaya, T., Bartholomäus, L., Gustin, W., Basler, T. (2024). Prompt Shift of On-State Resistance in LDMOS Devices: Causes, Recovery, and Reliability Implications. In 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp. 394–397), Germany. https://doi.org/10.1109/ISPSD59661.2024.10579645 (reposiTUm) | |
| 2048. | Sokolovic, I., Rasouli, S., Wu, B., Sofer, Z., Matković, A., Schmid, M., Diebold, U., Grasser, T. (2024, March 19). PtSe₂ vdW Single-Crystal Surfaces Studied at the Atomic Scale With ncAFM 87. Jahrestagung der DPG und DPG-Frühjahrstagung, Berlin, Germany. (reposiTUm) | |
| 2047. | Lamprecht, D., Capin, M., Benzer, A., Längle, M., Mangler, C., Kotakoski, J., Filipovic, L. (2024). Room Temperature Gas Sensing Based on Substitutional Atom Doped MoS₂. In XXXVIth International Winterschool on Electronic Properties of Novel Materials: Molecular Nanostructures: Program (p. 31), Kirchberg, Austria. (reposiTUm) | |
| 2046. | Etl, C., Ballicchia, M., Nedjalkov, M., Weinbub, J. (2024). Signed-Particle Monte Carlo Algorithm for Wigner Transport in Linear Electromagnetic Fields. In Conference Program and Book of Abstracts: The 15th International Conference Scientific Computing in Electrical Engineering (SCEE) (pp. 66–67), Darmstadt, Germany. (reposiTUm) | |
| 2045. | Pruckner, B., Jorstad, N., Bendra, M., Hadamek, T., Goes, W., Selberherr, S., Sverdlov, V. (2024). Simulation of Advanced MRAM Devices for Sub-Ns Switching. In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 1–4), San Jose, California, United States. https://doi.org/10.1109/SISPAD62626.2024.10733317 (reposiTUm) | |
| 2044. | Pruckner, B., Jørstad, N., Bendra, M., Hadamek, T., Wolfgang Goes, Selberherr, S., Sverdlov, V. (2024). Simulation of Advanced MRAM Devices for Sub-Ns Switching. In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Jose, United States. https://doi.org/10.1109/SISPAD62626.2024.10733317 (reposiTUm) | |
| 2043. | Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2024). Simulation of SAF-Enhanced Multilayered STT-MRAM Structures. In 2024 Austrochip Workshop on Microelectronics (Austrochip) (pp. 1–4), Vienna, Austria. https://doi.org/10.1109/Austrochip62761.2024.10716241 (reposiTUm) | |
| 2042. | Saleh, A., Croes, K., Ceric, H., De Wolf, I., Zahedmanesh, H. (2024). Technology Benchmarking of Copper Electromigration Using a Grain-Sensitive Simulation Framework. In 2024 IEEE International Interconnect Technology Conference (IITC), San Jose, United States. https://doi.org/10.1109/IITC61274.2024.10732543 (reposiTUm) | |
| 2041. | Sokolovic, I., Guedes, E., van Waas, T., Poncé, S., Polley, C., Schmid, M., Diebold, U., Radović, M., Setvin, M., Dil, H. (2024, March 22). Two-Dimensional Electron Liquids at Truly Bulk-Terminated SrTiO₃ 87. Jahrestagung der DPG und DPG-Frühjahrstagung, Berlin, Germany. (reposiTUm) | |
| 2040. | Etl, C., Ballicchia, M., Nedjalkov, M., Kosina, H., Weinbub, J. (2024). Wigner Transport in Linear Magnetic Fields: The Quantum Magnetic Term Effect. In 2024 IEEE 24th International Conference on Nanotechnology (NANO) (pp. 74–79), Gijón, Spain. https://doi.org/10.1109/NANO61778.2024.10628731 (reposiTUm) | |
| 2039. | Grill, A., Michl, J., Díaz-Fortuny, J., Beckers, A., Bury, E., Chasin, A., Grasser, T., Waltl, M., Kaczer, B., De Greve, K. (2023). A Comprehensive Cryogenic CMOS Variability and Reliability Assessment Using Transistor Arrays. In 2023 7th IEEE Electron Devices Technology, Manufacturing Conference (EDTM) (pp. 1–3), Korea, Republic of. https://doi.org/10.1109/EDTM55494.2023.10102937 (reposiTUm) | |
| 2038. | Aguinsky, L., Toifl, A., Souza Berti Rodrigues, F., Hössinger, A., Weinbub, J. (2023). A Modern Formulation of Knudsen Diffusion With Applications to Nanofabrication. In 2023 IEEE 23rd International Conference on Nanotechnology (NANO) (pp. 270–275), Jeju, Korea, Republic of. https://doi.org/10.1109/NANO58406.2023.10231251 (reposiTUm) | |
| 2037. | Bendra, M., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2023). A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping. In 9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2023 (pp. 1–2), Tarragona, Spain. (reposiTUm) | |
| 2036. | Wilhelmer, C., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023). Ab Initio Investigations of Electron and Hole Trapping Processes of H Induced Defects in Amorphous SiO₂. In The 14th International Conference on SiO₂, Dielectrics and Related Devices : Book of Abstracts (pp. 18–19), Palermo, Italy. (reposiTUm) | |
| 2035. | Fiorentini, S., Pruckner, B., Goes, W., Selberherr, S., Sverdlov, V. (2023). Accurate Torque Evaluation in Elongated Ultra-Scaled STT-MRAM Devices. In 243rd ECS Meeting with the Eighteenth International Symposium on Solid Oxide Fuel Cells May 28, 2023 - June 2, 2023 Boston, USA (p. 1), Boston, MA, United States. https://doi.org/10.1149/MA2023-01331859mtgabs (reposiTUm) | |
| 2034. | Stephanie, M., Pham, L., Schindler, A., Waltl, M., Grasser, T., Schrenk, B. (2023). All-Optical ReLU as a Photonic Neural Activation Function. In 2023 IEEE Photonics Society Summer Topicals Meeting Series (SUM) (pp. 1–2), Italy. https://doi.org/10.1109/SUM57928.2023.10224396 (reposiTUm) | |
| 2033. | Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Jorstad, N., Pruckner, B., Selberherr, S., Goes, W., Sverdlov, V. (2023). Back-Hopping in Ultra-Scaled MRAM Cells. In Proceedings of the International Convention MIPRO (pp. 159–162), Opatija, Croatia. https://doi.org/10.23919/MIPRO57284.2023.10159764 (reposiTUm) | |
| 2032. | Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Jørstad, N. P., Pruckner, B., Selberherr, S., Wolfgang Goes, Sverdlov, V. (2023, May 25). Back-Hopping in Ultra-Scaled MRAM Cells 46th MIPRO ICT and Electronics Convention (MIPRO), Opatija, Croatia. (reposiTUm) | |
| 2031. | Sverdlov, V., Selberherr, S. (2023). Charge and Spin Transport in Semiconductor Devices. In 2023 IEEE 15th International Conference on ASIC (ASICON) (pp. 1–4), Nanjing, China. https://doi.org/10.1109/ASICON58565.2023.10396645 (reposiTUm) | |
| 2030. | Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023, May 29). Charged Instrinsic Defect States in Amorphous Si3N4 European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. (reposiTUm) | |
| 2029. | Ballicchia, M., Nedjalkov, M., Weinbub, J. (2023). Coherent Wigner Dynamics of a Superposition State in a Tunable Barrier Quantum Dot. In Book of Abstracts of the International Workshop on Computational Nanotechnology 2023 (IWCN) (pp. 90–91), Barcelona, Spain. (reposiTUm) | |
| 2028. | Sverdlov, V., Bendra, M., Pruckner, B., Fiorentini, S., Goes, W., Selberherr, S. (2023). Comprehensive Modeling of Advanced Composite Magnetoresistive Devices. In Proceedings of the IEEE European Solid-State Device Research Conference (ESSDERC) (pp. 93–96), Lisbon, Portugal. https://doi.org/10.1109/ESSDERC59256.2023.10268508 (reposiTUm) | |
| 2027. | Ballicchia, M., Etl, C., Nedjalkov, M., Weinbub, J. (2023). Controlling Single Electrons by Non-Uniform Magnetic Fields. In 2023 Workshop on Innovative Nanoscale Devices and Systems: Book of Abstracts (pp. 87–88), Kona, Hawaii, United States. (reposiTUm) | |
| 2026. | Sverdlov, V., El-Sayed, A., Seiler, H., Kosina, H. (2023). Edge States Dispersion in Narrow Nanoribbons of 2D Transition Metal Dichalcogenides in the 1T′ Topological Phase. In 22nd International Winterschool - New Developments in Solid State Physics - Abstract Book (p. 116), Mauterndorf, Austria. (reposiTUm) | |
| 2025. | Kosina, H., Gull, J. (2023). Effect of Electron-Electron Scattering on the Energy Distribution in Semiconductor Devices. In Book of abstracts of the International Workshop on Computational Nanotechnology (IWCN) (pp. 62–63), Barcelona, Spain. (reposiTUm) | |
| 2024. | Filipovic, L., Lacerda de Orio, R. (2023). Electromigration Reliability of Buried Power Rails in Vertically Stacked Devices. In 2023 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–6), South Lake Tahoe, CA, United States. https://doi.org/10.1109/IIRW59383.2023.10477689 (reposiTUm) | |
| 2023. | Kosik, R., Cervenka, J., Waldhör, D., Ribeiro, F., Kosina, H. (2023). Exploring the Global Solution Space of a Simple Schrödinger-Poisson Problem. In Large-Scale Scientific Computations (pp. 472–480), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-031-56208-2_49 (reposiTUm) | |
| 2022. | Reiter, T., Filipovic, L. (2023). Fast 3D Flux Calculation Using Monte Carlo Ray Tracing on GPUs. In Proceedings of the International Conference on Microelectronic Devices and Technologies (MicDAT '2023)) (pp. 67–72), Funchal, Portugal. https://doi.org/10.13140/RG.2.2.13265.71524 (reposiTUm) | |
| 2021. | Fiorentini, S., Lacerda de Orio, R., Ender, J., Selberherr, S., Bendra, M., Jorstad, N. P., Gös, W., Sverdlov, V. (2023, January 21). Finite Element Method for MRAM Switching Simulations [Keynote Presentation]. International Conference on Mathematical Models, Computational Techniques in Science, and Engineering (MMCTSE), Athens, Greece. (reposiTUm) | |
| 2020. | Knobloch, T., Grasser, T. (2023). Gate Stack Design for Field-Effect Transistors Based on Two-Dimensional Materials. In ECS Meeting Abstracts (p. 1319), Boston, MA, United States. https://doi.org/10.1149/MA2023-01131319mtgabs (reposiTUm) | |
| 2019. | Ballicchia, M., Nedjalkov, M., Weinbub, J. (2023). Gauge-Invariant Wigner Particle Model for Linear Electromagnetic Fields. In Book of Abstracts: IWW International Wigner Workshop 2023 (pp. 3–5), Barcelona, Spain. (reposiTUm) | |
| 2018. | Knobloch, T., Selberherr, S., Grasser, T. (2023). High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits. In ECS Meeting Abstracts (p. 1864), Boston, MA, United States. https://doi.org/10.1149/MA2023-01331864mtgabs (reposiTUm) | |
| 2017. | Pruckner, B., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2023). Impact of Spin-Flip Length in dsMTJ Spacer Layers on Switching Performance. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023), Vienna, Austria. (reposiTUm) | |
| 2016. | Saleh, A., Zahedmanesh, H., Ceric, H., De Wolf, I., Croes, K. (2023). Impact of via Geometry and Line Extension on Via-Electromigration in Nano-Interconnects. In 2023 IEEE International Reliability Physics Symposium (IRPS) Proceedings, Monterey, United States. https://doi.org/10.1109/IRPS48203.2023.10118027 (reposiTUm) | |
| 2015. | Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023, May 30). Intrinsic Charge Trapping Sites in Amorphous Si₃N₄ European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. (reposiTUm) | |
| 2014. | Wilhelmer, C., Waldhör, D., Milardovich, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023). Intrinsic Electron Trapping in Amorphous Silicon Nitride (A-Si3N4:H). In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 149–152), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319493 (reposiTUm) | |
| 2013. | Jorstad, N., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2023). Micromagnetic Modeling of SOT-MRAM Dynamics. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm) | |
| 2012. | Sverdlov, V., Jorstad, N., Bendra, M., Hadamek, T., Goes, W. (2023). Modeling Emerging Spintronic Devices and Spintronic THz Emitters. In Book of abstracts of the International Symposium on Terahertz-Related Devices and Technologies (TeraTech 2023) (pp. 50–51), Aizu-Wakamatsu, Japan. (reposiTUm) | |
| 2011. | Reiter, T., Toifl, A., Hössinger, A., Filipovic, L. (2023). Modeling Oxide Regrowth During Selective Etching in Vertical 3D NAND Structures. In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 85–88), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319506 (reposiTUm) | |
| 2010. | Bogner, C., Schlunder, C., Waltl, M., Reisinger, H., Grasser, T. (2023). Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability. In 2023 IEEE International Reliability Physics Symposium (IRPS) (pp. 1–7), Monterey, United States. https://doi.org/10.1109/IRPS48203.2023.10117818 (reposiTUm) | |
| 2009. | Bendra, M., Lacerda de Orio, R., Goes, W., Sverdlov, V., Selberherr, S. (2023). Modeling of Ultra-Scaled Magnetoresistive Random Access Memory. In Proceedings of the 5th International Conferenceon Microelectronic Devices and Technologies (MicDAT '2023) (pp. 28–30), Funchal (Madeira Island), Portugal. (reposiTUm) | |
| 2008. | Leroch, S., Stella, R., Hössinger, A., Filipovic, L. (2023). Molecular Dynamics Study of Al Implantation in 4h-SiC. In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 185–188), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319554 (reposiTUm) | |
| 2007. | Gull, J., Kosina, H. (2023). Monte-Carlo Investigation of Energy Distributions in FET Channels. In 9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) : Programme, Tarragona, Spain. (reposiTUm) | |
| 2006. | Sverdlov, V., Bendra, M., Jorstad, N., Pruckner, B., Hadamek, T., Goes, W., Selberherr, S. (2023). Multi-Bit Operation in an MRAM Cell With a Composite Free Layer. In 2023 Workshop on Innovative Nanoscale Devices and Systems: Book of Abstracts (pp. 143–144), Kona, Hawaii, United States. (reposiTUm) | |
| 2005. | Sverdlov, V., Bendra, M., Goes, W., Fiorentini, S., Garcia-Barrientos, A., Selberherr, S. (2023). Multi-Level Operation in Ultra-Scaled MRAM. In 2023 IEEE Latin American Electron Devices Conference (LAEDC) Proceedings, Puebla, Mexico. https://doi.org/10.1109/LAEDC58183.2023.10209117 (reposiTUm) | |
| 2004. | Jorstad, N., Hadamek, T., Bendra, M., Ender, J., Pruckner, B., Goes, W., Sverdlov, V. (2023). Numerical Simulations of Spintronic Magnetoresistive Memories. In SURGE Virtual Event North America 2023: Agenda (p. 1), Santa Clara, CA, United States. (reposiTUm) | |
| 2003. | Hadamek, T., Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2023). Numerical Study of Two-Terminal SOT-MRAM. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm) | |
| 2002. | Cervenka, J., Kosik, R., Senra Ribeiro, F. (2023). Parallel Solution of the Schrödinger-Poisson Equation on GPUs. In 14th International Conference on Large-Scale Scientific Computations (LSSC '23): Scientific Program: Abstracts: List of Participants (pp. 34–35), Sozopol, Bulgaria. (reposiTUm) | |
| 2001. | Cervenka, J., Kosik, R., Ribeiro, F. (2023). Parallel Solution of the Schrödinger-Poisson Equation on GPUs. In Large-Scale Scientific Computations (pp. 375–382), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-031-56208-2_38 (reposiTUm) | |
| 2000. | Filipovic, L., Bobinac, J., Piso, J., Reiter, T. (2023). Physics-Informed Compact Model for SF6/O2 Plasma Etching. In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 73–76), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319479 (reposiTUm) | |
| 1999. | Filipovic, L., Reiter, T., Klemenschits, X., Leroch, S., Stella, R., Baumgartner, O., Hössinger, A. (2023). Process Simulation in Micro- And Nano-Electronics. In Book of abstracts of the International Workshop on Computational Nanotechnology 2023 (pp. 38–39), Barcelona, Spain. (reposiTUm) | |
| 1998. | Provias, A., Knobloch, T., Kitamura, A., O'Brien, K., Dorow, C., Waldhör, D., Stampfer, B., Penumatcha, A., Lee, S., Ramamurthy, R., Clendenning, S., Waltl, M., Avci, U., Grasser, T. (2023). Reliability Assessment of Double-Gated Wafer-Scale MoS2 Field Effect Transistors Through Hysteresis and Bias Temperature Instability Analyses. In 2023 International Electron Devices Meeting (IEDM) (pp. 1–4), San Francisco, United States. https://doi.org/10.1109/IEDM45741.2023.10413755 (reposiTUm) | |
| 1997. | Bendra, M., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2023). Simulation of Spin-Torque and Magnetization Dynamics in STT-MRAM Multi-Level Cells. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm) | |
| 1996. | Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2023). Spin Drift-Diffusion Boundary Conditions for FEM Modeling of Multilayer SOT Devices. In Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 357–360), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319650 (reposiTUm) | |
| 1995. | Sverdlov, V., Bendra, M., Pruckner, B., Jorstad, N., Hadamek, T., Ender, J., Lacerda de Orio, R., Gös, W. (2023). Spin and Charge Transport in Ultra-Scaled MRAM Cells. In Proceedings of the International Conference “Micro- and Nanoelectronics” (ICMNE) (p. 55), Moscow-Zvenigorod, Russian Federation. https://doi.org/10.29003/m3563.ICMNE-2023 (reposiTUm) | |
| 1994. | Hadamek, T., Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2023). Study of Self-Heating and Its Effects in SOT-STT-MRAM. In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 337–340), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319549 (reposiTUm) | |
| 1993. | Bendra, M., Fiorentini, S., Hadamek, T., Jorstad, N., Ender, J., Lacerda de Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2023). Switching Composite Free Layers in Ultra-Scaled MRAM Cells. In 22nd International Winterschool - New Developments in Solid State Physics - Abstract Book (pp. 184–185), Mauterndorf, Austria. (reposiTUm) | |
| 1992. | Pruckner, B., Fiorentini, S., Jorstad, N., Hadamek, T., Selberherr, S., Gös, W., Sverdlov, V. (2023). Switching Performance of Mo-Based pMTJ and dsMTJ Structures. In Book of Abstracts of the International Workshop on Computational Nanotechnology (pp. 144–145), Barcelona, Spain. (reposiTUm) | |
| 1991. | Achleitner, F., Arnold, A., Carlen, E., Jüngel, A., Mehrmann, V. (2023, September 18). The Hypocoercivity Index for the Short Time Behavior of Linear Time-Invariant ODE Systems ÖMG Tagung 2023 Meeting of the Austrian Mathematical Society, Karl-Franzens-University (KFU), Graz, Austria. (reposiTUm) | |
| 1990. | Ender, J., Lacerda de Orio, R., Goes, W., Sverdlov, V. (2023). Towards Efficient SOT-assisted STT-MRAM Cell Switching Using Reinforcement Learning. In 14th International Conference, Large-Scale Scientific Computations LSSC'23 : Scientific Program, Abstracts, List of Participants (p. 39), Sozopol, Bulgaria. (reposiTUm) | |
| 1989. | Bendra, M., Jorstad, N., Lacerda de Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2023). Unified Modeling of Ultra-Scaled STT-MRAM Cells: Harnessing Parasitic Effects for Enhanced Data Storage Dynamics. In IEDM 2023 Special MRAM poster session, San Francisco, United States. (reposiTUm) | |
| 1988. | Weinbub, J., Ballicchia, M., Etl, C., Nedjalkov, M. (2023, March 6). Wigner Signed Particles for Electron Quantum Optics Mini Workshop “QuantMOCOTE - Modelling, Optimization and Control of Quantum systems in Technology and Education,” Würzburg, Germany. (reposiTUm) | |
| 1987. | Ballicchia, M., Etl, C., Nedjalkov, M., Weinbub, J. (2023). Wigner Transport in Magnetic Fields. In Book of abstracts of the International Workshop on Computational Nanotechnology 2023 (pp. 119–120), Barcelona, Spain. (reposiTUm) | |
| 1986. | Rodrigues, F., Aguinsky, L.F., Hössinger, A., Weinbub, J.: "3D Feature-Scale Modeling of Highly Selective Fluorocarbon Plasma Etching"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 32 - 33. | |
| 1985. | Cvitkovich, L., Waldhör, D., El-Sayed, A.-M., Jech, M., Wilhelmer, C., Grasser, T.: "Ab-Initio Modeling of the Initial Stages of Si(100) Thermal Oxidation"; Poster: Psi-K Conference (Psi-K) 2022, Lausanne, Schwitzerland; 22.08.2022 - 25.08.2022; in: "PSI-K 2022: abstracts book", (2022), S. 209. | |
| 1984. | Wilhelmer, C., Waldhör, D., Jech, M., El-Sayed, A.-M., Cvitkovich, L., Waltl, M., Grasser, T.: "Ab-Initio Study of Multi-State Defects in Amorphous SiO2"; Vortrag: Psi-K Conference (Psi-K) 2022, Lausanne, Schwitzerland; 22.08.2022 - 25.08.2022; in: "PSI-K 2022: abstracts book", (2022), S. 264. | |
| 1983. | Selberherr, S., Sverdlov, V.: "About Electron Transport and Spin Control in Semiconductor Devices"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain (eingeladen); 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 1 - 4. | |
| 1982. | Orio, R., Ender, J., Goes, W., Fiorentini, S., Selberherr, S., Sverdlov, V.: "About the Switching Energy of a Magnetic Tunnel Junction determined by Spin-Orbit Torque and Voltage-Controlled Magnetic Anisotropy"; Vortrag: 2022 IEEE Latin American Electron Devices Conference (LAEDC), Puebla, Mexico; 04.06.2022 - 06.06.2022; in: "2022 IEEE Latin American Electron Devices Conference (LAEDC)", 978-1-6654-9768-8, (2022), ISBN: 978-1-6654-9768-8; S. 1 - 4. https://doi.org/10.1109/LAEDC54796.2022.9908222 | |
| 1981. | Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Jorstad, N., Goes, W., Selberherr, S. (2022). Advanced Modeling of Emerging Devices for Digital Spintronics. In 2nd International Conference on Nanoscience and Nanotechnology (p. 40), Dubai, United Arab Emirates. (reposiTUm) | |
| 1980. | Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Jorstad, N., Goes, W., Selberherr, S. (2022). Advanced Modeling of Emerging Magneto-Resistive Memory. In NANOMEET 2022 2nd International Meet, Expo on Nanotechnology (pp. 78–79), Edinburgh, United Kingdom. (reposiTUm) | |
| 1979. | Lenz, C., Manstetten, P., Hössinger, A., Weinbub, J.: "Automatic Grid Refinement for Thin Material Layer Etching in Process TCAD Simulations"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 11 - 12. | |
| 1978. | Milardovich, D., Waldhör, D., Jech, M., El-Sayed, A.-M., Grasser, T.: "Building Robust Machine Learning Force Fields by Composite Gaussian Approximation Potentials"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 61 - 62. | |
| 1977. | Illarionov, Yu., Uzlu, B., Knobloch, T., Banshchikov, A., Sverdlov, V., Vexler, M., Sokolov, N. S., Waltl, M., Wang, Z., Neumaier, D., Lemme, M., Grasser, T.: CVD-GFETs with Record-small Hysteresis Owing to 2nm Epitaxial CaF2 Insulators Vortrag: Device Research Conference (DRC), Columbus, OH; 26.06.2022 - 29.06.2022; in: "Proceedings of the Device Research Conference (DRC)", (2022), ISBN: 978-1-6654-9883-8; S. 121 - 122. | |
| 1976. | Fiorentini, S., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V.: "Comprehensive Evaluation of Torques in Ultra Scaled MRAM Devices"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 11 - 12. | |
| 1975. | Filipovic, L., Baumgartner, O., Piso, J., Bobinac, J., Reiter, T., Strof, G., Rzepa, G., Stanojevic, Z., Karner, M.: "DTCO Flow for Air Spacer Generation and its Impact on Power and Performance at N7"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 34 - 35. | |
| 1974. | Fiorentini, S., Loch, W.J., Bendra, M., Jørstad, N., Ender, J., Orio, R., Hadámek, T., Goes, W., Sverdlov, V., Selberherr, S.: "Design Analysis of Ultra-Scaled MRAM Cells"; Vortrag: 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, Nanjing, China (eingeladen); 25.10.2022 - 28.10.2022; in: "Proceedings of 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)", (2022), ISBN: 978-1-6654-6905-0. | |
| 1973. | Saleh, A., Zahedmanesh, H., Ceric, H., Croes, K., De Wolf, I.: "Dynamics of Electromigration Voids in Cu Interconnects: Investigation Using a Physics-Based Model Augmented by Neural Networks"; Vortrag: IEEE International Interconnect Technology Conference (IITC), San Jose, USA; 27.06.2022 - 30.06.2022; in: "2022 IEEE International Interconnect Technology Conference (IITC)", (2022), ISBN: 978-1-6654-8646-0; S. 22 - 27. https://doi.org/10.1109/IITC52079.2022.9881303 | |
| 1972. | Sverdlov, V., Seiler, H., El-Sayed, A.-M., Illarionov, Yu., Kosina, H., Selberherr, S.: "Edge Modes in Narrow Nanoribbons of Transition Metal Dichalcogenides in a Topological 1T"; Vortrag: International Conference on Physics and its Application, San Francisco, USA (eingeladen); 18.07.2022 - 21.07.2022; in: "International Conference on Physics and its Application 2022", (2022), S. 36 - 37. | |
| 1971. | Sverdlov, V., El-Sayed, A., Seiler, H., Kosina, H. (2022). Edge State Band Gap Dependencies on the Width of Transition Metal Dichalcogenide Nanoribbons in the 1T′ Topological Phase. In Workshop on Innovative Nanoscale Devices and Systems. Book of Abstracts (pp. 48–49), Lihue, HI, United States. (reposiTUm) | |
| 1970. | Bogner, C., Grasser, T., Waltl, M., Reisinger, H., Schlunder, C. (2022). Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays. In 2022 IEEE International Reliability Physics Symposium (IRPS) (pp. 1–8), Dallas, United States. https://doi.org/10.1109/IRPS48227.2022.9764496 (reposiTUm) | |
| 1969. | Ballicchia, M., Nedjalkov, M., Weinbub, J.: Electromagnetic Control of Electron Interference Poster: CECAM Flagship Workshop on Quantum Transport Methods and Algorithms: From Particles to Waves Approaches, Zurich; 06.07.2022 - 08.07.2022; in: "Book of Abstracts of the CECAM Flagship Workshop on Quantum Transport Methods and Algorithms: From Particles to Waves Approaches", (2022), S. 15. | |
| 1968. | Ceric, H., Orio, R., Selberherr, S.: "Electromigration Degradation of Gold Interconnects: A Statistical Study"; Vortrag: IEEE International Interconnect Technology Conference (IITC), San Jose, California,; 27.06.2022 - 30.06.2022; in: "2022 IEEE International Interconnect Technology Conference (IITC)", (2022), S. 102 - 104. https://doi.org/10.1109/IITC52079.2022.9881313 | |
| 1967. | Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W.J., Jørstad, N., Goes, W., Selberherr, S.: "Emerging Devices for Digital Spintronics"; Hauptvortrag: 2nd Global Conference & Expo on Nanotechnology & Nanoscience, online (eingeladen); 25.05.2022 - 26.05.2022; in: "2nd Global Conference & Expo on Nanotechnology & Nanoscience", (2022), S. 32 - 33. | |
| 1966. | Knobloch, T., Illarionov, Yu., Grasser, T.: "Enhancing the Stability of 2D Material-Based Transistors via Fermi-Level Tuning"; Vortrag: Graphene Week 2022, Munich, Germany (eingeladen); 05.09.2022 - 09.09.2022; in: "Abstracts of Graphene Week 2022", (2022). | |
| 1965. | Nazzari, D., Genser, J. A., Ritter, V., Bethge, O., Bertagnolli, E., Grasser, T., Weber, W. M., Lugstein, A. (2022, September 0). Epitaxial Growth of Crystalline CaF2 on Silicene by Molecular Beam Epitaxy European Material Research Society (E-MRS) Fall Meeting 2022, Warsaw, Poland. (reposiTUm) | |
| 1964. | Nazzari, D., Genser, J. A., Ritter, V., Bethge, O., Bertagnolli, E., Grasser, T., Weber, W. M., Lugstein, A. (2022, September 12). Epitaxial Growth of Crystalline CaF2 on Silicene by Molecular Beam Epitaxy 19th Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST-19), Mondsee, Austria. (reposiTUm) | |
| 1963. | Fiorentini, S., Bendra, M., Ender, J., Goes, W., Sverdlov, V., Selberherr, S. (2022). Evaluating Spin Transfer Torques in Multilayered Magnetic Tunnel Junctions and Spin Valves. In Workshop on Innovative Nanoscale Devices and Systems. Book of Abstracts (pp. 44–45), Lihue, HI, United States. (reposiTUm) | |
| 1962. | Knobloch, T., Illarionov, Yu., Grasser, T.: "Finding Suitable Gate Insulators for Reliable 2D FETs"; Vortrag: International Reliability Physics Symposium (IRPS), Dallas, USA (eingeladen); 27.03.2022 - 31.03.2022; in: "2022 IEEE International Reliability Physics Symposium (IRPS) : proceedings : March 27-31, 2022, Dallas, Texas / IEEE", (2022), ISBN: 978-1-6654-7950-9; S. 2A.1-1 - 2A.1-10. https://doi.org/10.1109/IRPS48227.2022.9764499 | |
| 1961. | Jorstad, N., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2022). Finite Element Modeling of Spin-Orbit Torques. In Proceedings of the Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2022)) (pp. 1–2), Udine, Italy. (reposiTUm) | |
| 1960. | Ceric, H., Orio, R., Selberherr, S.: "Impact of Gold Interconnect Microstructure on Electromigration Failure Time Statistics"; Vortrag: IEEE European Solid-State Device Research Conference (ESSDERC), Milan, Italy; 20.09.2022 - 22.09.2022; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2022), ISBN: 978-1-6654-8496-1; S. 301 - 303. | |
| 1959. | Bobinac, J., Reiter, T., Piso, J., Klemenschits, X., Baumgartner, O., Stanojevic, Z., Strof, G., Karner, M., Filipovic, L.: "Impact of Mask Tapering on SF6/O2 Plasma Etching"; Vortrag: Fourth International Conference on Microelectronic Devices and Technologies (MicDAT '2022), Corfu, Greece; 21.09.2022 - 23.09.2022; in: "Microelectronic Devices and Technologies: Proceedings of the 4rd International Conference on Microelectronic Devices and Technologies (MicDAT '2022)", (2022), ISBN: 978-84-09-43856-3; S. 90 - 94. | |
| 1958. | Tselios, K., Knobloch, T., Michl, J., Waldhör, D., Schleich, C., Ioannidis , E., Enichlmair , H., Minixhofer , R., Grasser, T., Waltl, M. (2022). Impact of Single Defects on NBTI and PBTI Recovery in SiO₂ Transistors. In Proceedings 2022 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–5), Fallen Leaf Lake, CA, United States. https://doi.org/10.1109/IIRW56459.2022.10032748 (reposiTUm) | |
| 1957. | Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W.J., Jørstad, N., Goes, W., Selberherr, S.: "Interface Effects in Ultra-Scaled MRAM Cells"; Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Udine, Italy; 18.05.2022 - 20.05.2022; in: "Proceedings of the Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)", (2022). | |
| 1956. | Milardovich, D., Jech, M., Waldhör, D., El-Sayed, A.-M., Grasser, T.: "Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide"; Vortrag: Psi-K Conference (Psi-K) 2022, Lausanne, Schwitzerland; 22.08.2022 - 25.08.2022; in: "PSI-K 2022: abstracts book", (2022), S. 138. | |
| 1955. | Wilhelmer, C., Waldhör, D., Jech, M., El-Sayed, A., Cvitkovich, L., Waltl, M., Grasser, T. (2022). Metastability of Negatively Charged Hydroxyl-E' Centers and Their Potential Role in Positive Bias Temperature Instabilities. In ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC) (pp. 376–379), Italy. https://doi.org/10.1109/ESSDERC55479.2022.9947111 (reposiTUm) | |
| 1954. | Ceric, H., Orio, R., Selberherr, S.: "Microstructural Impact on Electromigration Reliability of Gold Interconnects"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 178 - 179. | |
| 1953. | Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W.J., Jørstad, N., Selberherr, S.: "Modeling Advanced Magnetoresistive Memory: A Journey from Finite Element Methods to Machine Learning Approaches"; Hauptvortrag: 2 nd Global Webinar on Nanoscience & Nanotechnology, online (eingeladen); 14.03.2022 - 15.03.2022; in: "2nd Global Webinar on Nanoscience & Nanotechnology", (2022). | |
| 1952. | Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W.J., Jørstad, N., Goes, W., Selberherr, S.: "Modeling Advanced Spintronic Based Magnetoresistive Memory"; Vortrag: International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022), Yerevan, Armenia (eingeladen); 27.09.2022 - 29.09.2022; in: "Book of Abstracts of the International Conference on Microwave & THz Technologies and Optoelectronics (IRPhE)", (2022). | |
| 1951. | Fiorentini, S., Bendra, M., Ender, J., Hadamek, T., Loch, W., Jorstad, N., Lacerda de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2022). Modeling Advanced Spintronic Based Magnetoresistive Memory. In International Conference on Microwave, THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022) (pp. 49–52), Yerevan, Armenia. https://doi.org/10.1049/icp.2022.2795 (reposiTUm) | |
| 1950. | Sverdlov, V., Loch, W., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Jorstad, N., Goes, W., Selberherr, S.: Modeling Approach to Ultra-Scaled MRAM Cells Vortrag: ASETMEET2022 International Meet On Applied Science, Engineering and Technology, Taastrup, Copenhagen (eingeladen); 23.06.2022 - 25.06.2022; in: "Book of Abstracts of the International Meet On Applied Science, Engineering and Technology (ASETMEET)", (2022), S. 7 - 8. | |
| 1949. | Jørstad, N., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V.: "Modeling Interfacial and Bulk Spin-Orbit torques"; Vortrag: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 06.06.2022 - 10.06.2022; in: "Book of Abstracts of the International Conference on Nanostructured Materials (NANO)", (2022). | |
| 1948. | Aguinsky, L.F., Rodrigues, F., Klemenschits, X., Filipovic, L., Hössinger, A., Weinbub, J.: "Modeling Non-Ideal Conformality during Atomic Layer Deposition in High Aspect Ratio Structures"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 40 - 41. | |
| 1947. | Reiter, T., Klemenschits, X., Filipovic, L. (2022). Modeling Plasma-Induced Damage During the Dry Etching of Silicon. In 2022 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–5), South Lake Tahoe, CA, United States. https://doi.org/10.1109/IIRW56459.2022.10032764 (reposiTUm) | |
| 1946. | Hadámek, T., Goes, W., Selberherr, S., Sverdlov, V.: "Modeling Thermal Effects in STT-MRAM"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 11 - 12. | |
| 1945. | Sverdlov, V.: "Modeling Ultra-Scaled Magnetoresistive Memory Cells"; Hauptvortrag: 3rd Global Webinar on Nanoscience & Nanotechnology, online (eingeladen); 18.07.2022; in: "3rd Global Webinar on Nanoscience & Nanotechnology", (2022). | |
| 1944. | Bendra, M., Loch, W., Jorstad, N., Fiorentini, S., Selberherr, S., Gös, W., Sverdlov, V. (2022). Modeling Ultra-Scaled Multi-Layer STT-MRAM Cells: A Unified Spin and Charge Drift-Diffusion Approach. In Special MRAM poster session IEDM (pp. 18–19), San Francisco, CA, United States. (reposiTUm) | |
| 1943. | Kosina, H. (2022, October 13). Numerische Modellierung Der Beweglichkeit in Verspanntem Silizium CiS MEMS Workshop, Erfurt, Germany. (reposiTUm) | |
| 1942. | Kosina, H. (2022). Particle Models for Electron-Electron Scattering. In Book of Abstracts Quantum Transport Methods and Algorithms: From Particles to Waves Approaches (p. 10), Zurich, Switzerland. (reposiTUm) | |
| 1941. | Stephanie, M., Honz, F., Vokic, N., Boxleitner, W., Waltl, M., Grasser, T., Schrenk, B. (2022). Reception of Frequency-Coded Synapses Through Fabry-Perot SOA- REAM Integrating Weighting and Detection Functions. In 2022 European Conference on Optical Communication (ECOC) (pp. 1–4), Basel, Switzerland. (reposiTUm) | |
| 1940. | Filipovic, L. (2022). Reliability of Platinum Microheater Geometries for MEMS-Based Gas Sensors. In 2022 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–6), South Lake Tahoe, CA, United States. https://doi.org/10.1109/IIRW56459.2022.10032744 (reposiTUm) | |
| 1939. | Quell, M., Hössinger, A., Weinbub, J.: Shared-Memory Fast Marching Method for Re-Distancing on Hierarchical Meshes Vortrag: Austrian-Slovenian HPC Meeting (ASHPC), Grundlsee; 31.05.2022 - 02.06.2022; in: "Book of Abstracts of the Austrian-Slovenian HPC Meeting (ASHPC)", (2022), ISBN: 978-3-200-08499-5; 1 S. https://doi.org/10.25365/phaidra.337 | |
| 1938. | Stampfer, P., Meinhardt, G., Grasser, T., Waltl, M. (2022). Simulating and Modeling the Influence of Deep Trench Interface Recombination on Si Photodiodes. In 2022 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–5), Fallen Leaf Lake, CA, United States. https://doi.org/10.1109/IIRW56459.2022.10032736 (reposiTUm) | |
| 1937. | Loch, W.J., Selberherr, S., Sverdlov, V.: "Simulation of Novel MRAM Devices with Enhanced Performance"; Vortrag: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 06.06.2022 - 10.06.2022; in: "Book of Abstracts of the International Conference on Nanostructured Materials (NANO)", (2022). | |
| 1936. | Fiorentini, S., Bendra, M., Ender, J., Orio, R., Goes, W., Selberherr, S., Sverdlov, V.: "Spin Torques in ULTRA-Scaled MRAM Devices"; Vortrag: IEEE European Solid-State Device Research Conference (ESSDERC), Mailand; 20.09.2022 - 22.09.2022; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2022), ISBN: 978-1-6654-8496-1; S. 348 - 351. | |
| 1935. | Fiorentini, S., Ender, J., Selberherr, S., Goes, W., Sverdlov, V.: "Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach"; Vortrag: 26th World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI 2022), online; 12.07.2022 - 15.07.2022; in: "The 26th World Multi-Conference on Systemics, Cybernetics and Informatics: WMSCI 2022. Proceedings Volume II", 20 (2022), 4; S. 40 - 44. | |
| 1934. | Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W.J., Jørstad, N., Selberherr, S., Goes, W., Sverdlov, V.: "Spin Transfer Torques in Ultra-Scaled MRAM Cells"; Vortrag: MIPRO 2022, Opatija, Croatia; 23.05.2022 - 27.05.2022; in: "2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO)", (2022), ISBN: 978-953-233-103-5; S. 129 - 132. | |
| 1933. | Ceric, H., Lacerda de Orio, R., Selberherr, S. (2022). Statistical Study of Electromigration in Gold Interconnects. In 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (pp. 1–5), Singapore, Singapore. https://doi.org/10.1109/IPFA55383.2022.9915762 (reposiTUm) | |
| 1932. | Gollner, L., Steiner, R., Filipovic, L.: "Study of Phonon-limited Electron Transport in Monolayer MoS2"; Vortrag: Fourth International Conference on Microelectronic Devices and Technologies (MicDAT '2022), Corfu, Greece; 21.09.2022 - 23.09.2022; in: "Microelectronic Devices and Technologies Proceedings of the 4rd International Conference on Microelectronic Devices and Technologies (MicDAT 2022)", (2022), ISBN: 978-84-09-43856-3; S. 74 - 78. | |
| 1931. | Grill, A., John, V., Michl, J., Beckers, A., Bury, E., Tyaginov, S., Parvais, B., Chasin, A., Grasser, T., Waltl, M., Kaczer, B., Govoreanu, B. (2022). Temperature Dependent Mismatch and Variability in a Cryo-Cmos Array With 30k Transistors. In 2022 IEEE International Reliability Physics Symposium (IRPS) (pp. 1–6), Dallas, United States. https://doi.org/10.1109/IRPS48227.2022.9764594 (reposiTUm) | |
| 1930. | Hadámek, T., Fiorentini, S., Bendra, M., Orio, R., Loch, W.J., Jorstad, N., Selberherr, S., Goes, W., Sverdlov, V.: "Temperature Modeling in STT-MRAM:A Fully Three-Dimensional Finite Element Approach"; Vortrag: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 06.06.2022 - 10.06.2022; in: "Book of Abstracts of the International Conference on Nanostructured Materials (NANO)", (2022). | |
| 1929. | Jech, M., Grasser, T., Waltl, M.: "The Importance of Secondary Generated Carriers in Modeling of Full Bias Space"; Vortrag: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), online; 06.03.2022 - 09.03.2022; in: "2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)", EDTM, (2022), S. 265 - 267. https://doi.org/10.1109/EDTM53872.2022.9798262 | |
| 1928. | Giparakis, M., Knötig, H. M., Detz, H., Beiser, M., Schrenk, W., Schwarz, B., Strasser, G., Andrews, A. M. (2022, May 19). Top-Side Illuminated InAs/AlAsSb Quantum Cascade Detector at 2.7 µm CLEO: Science and Innovations 2022, San Jose, United States of America (the). (reposiTUm) | |
| 1927. | Filipovic, L. (2022, September 5). ViennaEMC: A Broadly-Applicable Ensemble Monte Carlo Framework Workshop WS1 - Monte Carlo Simulation: Beyond Moore’s LAW 2022, Granada, Spain. (reposiTUm) | |
| 1926. | Stephanie, M., Waltl, M., Grasser, T., SchrenkSchrenk, B.: "WDM-Conscious Synaptic Receptor Assisted by SOA+EAM"; Vortrag: 2022 Optical Fiber Communications Conference and Exhibition (OFC), San Diego, California, USA; 05.03.2022 - 09.03.2022; in: "2022 Optical Fiber Communications Conference and Exhibition (OFC)", (2022). | |
| 1925. | Ballicchia, M., Nedjalkov, M., Weinbub, J.: "Wigner Dynamics of Electron Quantum Superposition States in a Confined and Opened Quantum Dot"; Vortrag: 22nd IEEE International Conference on Nanotechnology, Palma de Mallorca, Sapin; 04.07.2022 - 08.07.2022; in: "2022 IEEE 22nd International Conference on Nanotechnology (NANO)", (2022), S. 565 - 568. https://doi.org/10.1109/NANO54668.2022.9928753 | |
| 1924. | Weinbub, J.: Wigner Signed-Particles: Computational Challenges and Simulation Opportunities Vortrag: CECAM Flagship Workshop on Quantum Transport Methods and Algorithms: From Particles to Waves Approaches, Zurich (eingeladen); 06.07.2022 - 08.07.2022; in: "Book of Abstracts of the CECAM Flagship Workshop on Quantum Transport Methods and Algorithms: From Particles to Waves Approaches", (2022), 1 S. | |
| 1923. | El-Sayed, A.-M., Seiler, H., Kosina, H., Selberherr, S., Sverdlov, V.: "Ab-initio Calculations of Edge States in Topological 1T′ MoS2 Nanoribbons"; Vortrag: 2021 Workshop on Innovative Nanoscale Devices and Systems (WINDS2021), Hawaii, USA; 28.11.2021 - 03.12.2021; in: "WINDS Book of Abstracts", (2021), ISBN: 978-3-9504738-3-4; S. 79 - 80. | |
| 1922. | Ender, J., Fiorentini, S., Orio, R., Hadámek, T., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V.: Advanced Modeling of Emerging MRAM: From Finite Element Methods to Machine Learning Approaches Vortrag: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia (eingeladen); 04.10.2021 - 08.10.2021; in: "Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE)", (2021), ISBN: 978-5-317-06675-8. | |
| 1921. | Ender, J., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V.: Advanced Modeling of Emerging Nonvolatile Magnetoresistive Devices Vortrag: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual) (eingeladen); 24.05.2021 - 06.06.2021; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; S. 45 - 46. | |
| 1920. | Hadámek, T., Selberherr, S., Goes, W., Sverdlov, V.: Asymmetry of Current-Induced Heating in Magnetic Tunnel Junctions Vortrag: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; S. 49 - 50. | |
| 1919. | Franco, J., Marneffe, J., Vandooren, A., Kimura, Y., Nyns, L., Wu, Z., El-Sayed, A.-M., Jech, M., Waldhör, D., Claes, D., Arimura, H., Ragnarsson, L., Afanas´Ev, V., Horiguchi, N., Linten, D., Grasser, T., Kaczer, B.: Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 12.12.2021 - 18.12.2021; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2021), ISBN: 978-1-7281-8888-1; S. 31.2.1 - 31.2.4. https://doi.org/10.1109/IEDM13553.2020.9372054 | |
| 1918. | Sverdlov, V., El-Sayed, A.-M., Kosina, H., Selberherr, S.: Ballistic Conductance, k. p Hamiltonian, Nanoribbons, Subbands, Topological Insulators (TIs), Topologically Protected Edge States Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 13.09.2021 - 17.09.2021; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC), TEDbrief Special Edition", (2021). | |
| 1917. | Grasser, T., O´Sullivan, B., Kaczer, B., Franco, J., Stampfer, B., Waltl, M.: CV Stretch-Out Correction after Bias Temperature Stress: Work-function Dependence of Donor-/Acceptor-like Traps, Fixed Charges, and Fast States Vortrag: IEEE International Reliability Physics Symposium (IRPS), virtual; 21.03.2021 - 24.03.2021; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2021), ISBN: 978-1-7281-6893-7; S. 1 - 6. https://doi.org/10.1109/IRPS46558.2021.9405184 | |
| 1916. | Klemenschits, X., Selberherr, S., Filipovic, L.: Combined Process Simulation and Emulation of an SRAM Cell of the 5nm Technology Node Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), S. 23 - 27. https://doi.org/10.1109/SISPAD54002.2021.9592605 | |
| 1915. | Sverdlov, V., Seiler, H., El-Sayed, A.-M., Kosina, H.: Conductance of Edge Modes in Nanoribbons of 2D Materials in a Topological Phase Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), S. 52 - 53. | |
| 1914. | Lenz, C., Toifl, A., Hössinger, A., Weinbub, J.: Curvature-Based Feature Detection for Hierarchical Grid Refinement in Epitaxial Growth Simulations Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), S. 109 - 110. | |
| 1913. | Fiorentini, S., Bendra, M., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V.: Design Support for Ultra-Scaled MRAM Cells Poster: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 13.12.2021 - 15.12.2021; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM", (2021), 1 S. | |
| 1912. | Naz, S., Shah, A., Ahmed, S., Patrick, G., Waltl, M.: Design of Fault-Tolerant and Thermally Stable XOR Gate in Quantum dot Cellular Automata Poster: IEEE European Test Symposium (ETS), Bruges, Belgium (Virtual); 24.05.2021 - 28.05.2021; in: "Proceedings of the IEEE European Test Symposium (ETS)", (2021). https://doi.org/10.1109/ETS50041.2021.9465459 | |
| 1911. | Orio, R., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V.: Deterministic Spin-Orbit Switching Scheme for an Array of Perpendicular MRAM Cells Suitable for Large Scale Integration Vortrag: Trends in Magnetism (TMAG), Cefalù, Italy; 06.09.2021 - 10.09.2021; in: "Proceedings of the Trends in Magnetism Conference (TMAG)", (2021). | |
| 1910. | Jørstad, N., Fiorentini, S., Goes, W., Sverdlov, V.: Efficient Finite Element Method Approach to Model Spin Orbit Torque MRAM Vortrag: International MOS-AK Workshop, Silicon Valley, USA; 17.12.2021; in: "Proceedings of the 14th International MOS-AK Workshop", (2021), S. 1. | |
| 1909. | Weinbub, J., Ballicchia, M., Nedjalkov, M., Selberherr, S.: Electromagnetic Coherent Electron Control Vortrag: IEEE Latin America Electron Devices Conference (LAEDC), virtual (eingeladen); 19.04.2021 - 21.04.2021; in: "Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC)", (2021), ISBN: 978-1-6654-1510-1; S. 1 - 4. https://doi.org/10.1109/LAEDC51812.2021.9437949 | |
| 1908. | Weinbub, J., Ballicchia, M., Nedjalkov, M.: "Electron Quantum Optics for Quantum Interference Logic Devices"; Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Hawaii, USA; 28.11.2021 - 03.12.2021; in: "WINDS Book of Abstracts", (2021), ISBN: 978-3-9504738-3-4; S. 58 - 59. | |
| 1907. | Ender, J., Orio, R., Sverdlov, V.: Enhancing SOT-MRAM Switching Using Machine Learning Vortrag: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual (eingeladen); 14.10.2021; in: "Proceedings of the Silvaco Users Global Event (SURGE)", (2021), S. 1. | |
| 1906. | Lenz, C., Scharinger, A., Quell, M., Manstetten, P., Hössinger, A., Weinbub, J.: Evaluating Parallel Feature Detection Methods for Implicit Surfaces Vortrag: Austrian-Slovenian HPC Meeting (ASHPC), Maribor, Slovenia (Virtual); 31.05.2021 - 02.06.2021; in: "Book of Abstracts of the Austrian-Slovenian HPC Meeting (ASHPC)", (2021), S. 31. | |
| 1905. | Michl, J., Grill, A., Waldhör, D., Schleich, C., Knobloch, T., Ioannidis, E., Enichlmair, H., Minixhofer, R., Kaczer, B., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M.: "Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS"; Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 11.12.2021 - 15.12.2021; in: "2021 IEEE International Electron Devices Meeting (IEDM)", (2021), S. 31.3.1 - 31.3.3. https://doi.org/10.1109/IEDM19574.2021.9720501 | |
| 1904. | Michl, J., Grill, A., Stampfer, B., Waldhoer, D., Schleich, C., Knobloch, T., Ioannidis, E., Enichlmair, H., Minixhofer, R., Kaczer, B., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021). Evidence of Tunneling Driven Random Telegraph Noise in Cryo-Cmos. In Proceedings of the IEEE International Electron Devices Meeting (IEDM) (pp. 31.3.1–31.3.4), San Francisco, CA, United States. https://doi.org/10.1109/IEDM19574.2021.9720501 (reposiTUm) | |
| 1903. | Filipovic, L., Klemenschits, X.: Fast Model for Deposition in Trenches using Geometric Advection Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), S. 224 - 228. https://doi.org/10.1109/SISPAD54002.2021.9592595 | |
| 1902. | Rodrigues, F., Aguinsky, L.F., Toifl, A., Hössinger, A., Weinbub, J.: Feature Scale Modeling of Fluorocarbon Plasma Etching for Via Structures including Faceting Phenomena Vortrag: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; S. 101 - 102. | |
| 1901. | Aguinsky, L.F., Wachter, G., Scharinger, A., Rodrigues, F., Toifl, A., Trupke, M., Schmid, U., Hössinger, A., Weinbub, J.: Feature-Scale Modeling of Isotropic SF6 Plasma Etching of Si Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), S. 54 - 55. | |
| 1900. | Bendra, M., Ender, J., Fiorentini, S., Hadámek, T., Orio, R., Goes, W., Selberherr, S., Sverdlov, V.: Finite Element Method Approach to MRAM Modeling Vortrag: International Convention on Information, Communication and Electronic Technology (MIPRO), Opatija, Croatia; 27.09.2021 - 01.10.2021; in: "Proceedings of the International Convention on Information, Communication and Electronic Technology (MIPRO)", (2021), ISBN: 978-953-233-101-1; S. 70 - 73. https://doi.org/10.23919/MIPRO52101.2021.9597194 | |
| 1899. | El-Sayed, A.-M., Seiler, H., Kosina, H., Sverdlov, V.: First Principles Approach to Study Topologically Protected Edge States in 1T′ MoS2 Nanoribbons Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), S. 113 - 114. | |
| 1898. | Filipovic, L., Selberherr, S.: Gas Sensing with Two-Dimensional Materials Beyond Graphene Vortrag: International Conference on Microelectronics (MIEL), Nis, Serbia (eingeladen); 12.09.2021 - 14.09.2021; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2021), ISBN: 978-1-6654-4526-9; S. 29 - 36. https://doi.org/10.1109/MIEL52794.2021.9569088 | |
| 1897. | Hadámek, T., Selberherr, S., Goes, W., Sverdlov, V.: Heating Asymmetry in Magnetoresistive Random Access Memories Vortrag: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA (Virtual); 18.07.2021 - 21.07.2021; in: "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2021), ISBN: 978-1-950492-55-8; S. 63 - 66. | |
| 1896. | Waltl, M.: Impact of Defects in Semiconductor Transistors on Devices and Circuits Vortrag: International Meet on Nanotechnology (NANOMEET), Porto, Portugal (eingeladen); 13.09.2021 - 15.09.2021; in: "Proceedings of the International Meet on Nanotechnology (NANOMEET)", (2021), S. 93. | |
| 1895. | Reiter, T., Klemenschits, X., Filipovic, L.: Impact of High-Aspect-Ratio Etching Damage on Selective Epitaxial Silicon Growth in 3D NAND Flash Memory Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), S. 34 - 35. | |
| 1894. | Kampl, M., Kosina, H., Waltl, M.: Improved Sampling Algorithms for Monte Carlo Device Simulation Vortrag: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; S. 53 - 54. | |
| 1893. | Ender, J., Orio, R., Fiorentini, S., Selberherr, S., Gös, W., Sverdlov, V.: Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux, France; 04.10.2021 - 07.10.2021; in: "Proceedings of the 32nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2021), ISSN: 0026-2714; S. 1 - 4. https://doi.org/10.1016/j.microrel.2021.114231 | |
| 1892. | Franco, J., Marneffe, J., Vandooren, A., Arimura, H., Ragnarsson, L., Claes, D., Litta, E. D., Horiguchi, N., Croes, K., Linten, D., Grasser, T., Kaczer, B.: Low Temperature Atomic Hydrogen Treatment for Superior NBTI Reliability -- Demonstration and Modeling across SiO2 IL Thicknesses from 1.8 to 0.6 nm for I/O and Core Logic Vortrag: International Symposium on VLSI Technology, Kyoto, Japan; 13.06.2021 - 19.06.2021; in: "2021 Symposium on VLSI Technology (VLSIT)", (2021), ISBN: 978-1-6654-1945-1; S. 1 - 2. | |
| 1891. | Milardovich, D., Jech, M., Waldhör, D., El-Sayed, A.-M., Grasser, T.: Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 13.09.2021 - 22.09.2021; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), ISBN: 978-1-6654-3748-6; S. 239 - 242. https://doi.org/10.1109/ESSDERC53440.2021.9631837 | |
| 1890. | Ballicchia, M., Benam, M., Nedjalkov, M., Selberherr, S., Weinbub, J.: Modeling Coulomb Interaction with a 'Wigner-Poisson' Coupling Scheme Vortrag: International Wigner Workshop (IW2), Daejeon, Korea (Virtual); 17.05.2021 - 21.05.2021; in: "Book of Abstracts of the International Wigner Workshop (IW2)", Institute for Microelectronics, TU Wien, (2021), ISBN: 978-3-9504738-2-7; S. 64 - 65. | |
| 1889. | Filipovic, L.: Modeling and Simulation of ALD in a Level Set Framework Vortrag: EFDS Workshop on Simulation for ALD, virtual (eingeladen); 25.03.2021; in: "Proceedings of the EFDS Workshop on Simulation for ALD", (2021), S. 9. | |
| 1888. | Weinbub, J.: Modeling and Simulation of Two-Dimensional Single-Electron Control Vortrag: International Meet on Nanotechnology (NANOMEET), Porto, Portugal (eingeladen); 13.09.2021 - 15.09.2021; in: "Proceedings of the International Meet on Nanotechnology (NANOMEET)", (2021). | |
| 1887. | Weinbub, J.: Modeling and Simulation of Two-Dimensional Single-Electron Dynamics Vortrag: Global Summit on Condensed Matter Physics (CONMAT), Valencia, Spain (virtual) (eingeladen); 18.10.2021 - 20.10.2021; in: "Proceedings of the Global Summit on Condensed Matter Physics (CONMAT)", (2021). | |
| 1886. | Cvitkovich, L., Jech, M., Waldhör, D., El-Sayed, A.-M., Wilhelmer, C., Grasser, T.: Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 13.09.2021 - 22.09.2021; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), ISBN: 978-1-6654-3748-6; S. 235 - 238. https://doi.org/10.1109/ESSDERC53440.2021.9631790 | |
| 1885. | Franco, J., Arimura, H., Marneffe, J., Vandooren, A., Ragnarsson, L., Wu, Z., Claes, D., Litta, E. D., Horiguchi, N., Croes, K., Linten, D., Grasser, T., Kaczer, B.: "Novel Low Thermal Budget Gate Stack Solutions for BTI Reliability in Future Logic Device Technologies"; Vortrag: IEEE International Conference on IC Design and Technology (ICICDT), Dresden, Germany; 15.09.2021 - 17.09.2021; in: "Proceedings of IEEE International Conference on IC Design and Technology", (2021), ISBN: 978-1-6654-4998-4; S. 1 - 4. | |
| 1884. | Kosina, H., Seiler, H., Sverdlov, V.: Numerical Calculation of the Transverse Modes in 1T' MoS2 Nanoribbons Vortrag: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; S. 2 - 3. | |
| 1883. | Kosik, R., Cervenka, J., Kosina, H.: Open Boundary Conditions for the Wigner and the Characteristic von Neumann Equation Vortrag: International Wigner Workshop (IW2), Daejeon, Korea (Virtual); 17.05.2021 - 21.05.2021; in: "Book of Abstracts of the International Wigner Workshop (IW2)", Institute for Microelectronics, TU Wien, (2021), ISBN: 978-3-9504738-2-7; S. 42 - 43. | |
| 1882. | Wen, C., Illarionov, Yu., Frammelsberger, W., Knobloch, T., Grasser, T., Lanza, M.: Outstanding Dielectric Properties of Ultra-thin CaF2 Dielectric Films Vortrag: APS March Meeting, College Park, MD, USA; 15.03.2021 - 19.03.2021; in: "Bulletin of the American Physical Society", (2021). | |
| 1881. | Ribeiro, F., Rupp, K., Grasser, T.: Parallel Solver Study for Solving the Boltzmann Transport Equation using Spherical Harmonics Expansions on Supercomputers Vortrag: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; S. 97 - 98. | |
| 1880. | Ender, J., Fiorentini, S., Sverdlov, V., Goes, W., Orio, R., Selberherr, S.: Reinforcement Learning Approach for Deterministic SOT-MRAM Switching Vortrag: SPIE Spintronics, San Diego, CA, USA - virtual (eingeladen); 01.08.2021 - 05.08.2021; in: "Proceedings of SPIE Spintronics", (2021), S. 11805-53. | |
| 1879. | Ender, J., Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V.: Reinforcement Learning Approach for Sub-Critical Current SOT-MRAM Switching Materials Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), S. 150 - 154. https://doi.org/10.1109/SISPAD54002.2021.9592561 | |
| 1878. | Ender, J., Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V.: Reinforcement Learning to Reduce Failures in SOT-MRAM Switching Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 15.09.2021 - 15.10.2021; in: "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2021), ISBN: 978-1-6654-3988-6. https://doi.org/10.1109/IPFA53173.2021.9617362 | |
| 1877. | Filipovic, L.: "Reliability and Stability of MEMS Microheaters for Gas Sensors"; Vortrag: IEEE International Integrated Reliability Workshop (IIRW), online (eingeladen); 04.10.2021 - 28.10.2021; in: "2021 IEEE International Integrated Reliability Workshop (IIRW)", (2021), ISBN: 978-1-6654-1794-5. https://doi.org/10.1109/IIRW53245.2021.9635162 | |
| 1876. | Fiorentini, S., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V.: Spin Drift-Diffusion Approach for the Computation of Torques in Multi-Layered Structures Vortrag: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; S. 51 - 52. | |
| 1875. | Fiorentini, S., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V.: Spin and Charge Drift-Diffusion Approach to Torque Computation in Magnetic Tunnel Junctions Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), S. 155 - 158. https://doi.org/10.1109/SISPAD54002.2021.9592559 | |
| 1874. | Fiorentini, S., Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V.: "Spin and Charge Drift-Diffusion Approach to Torque Computation in Spintronic Devices"; Vortrag: 2021 Workshop on Innovative Nanoscale Devices and Systems (WINDS2021), Kona; 28.11.2021 - 03.12.2021; in: "WINDS Book of Abstracts", (2021), ISBN: 978-3-9504738-3-4; S. 12 - 13. | |
| 1873. | Wilhelmer, C., Jech, M., Waldhör, D., El-Sayed, A.-M., Cvitkovich, L., Grasser, T.: Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 13.09.2021 - 22.09.2021; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), ISBN: 978-1-6654-3748-6; S. 243 - 246. https://doi.org/10.1109/ESSDERC53440.2021.9631833 | |
| 1872. | Rodrigues, F., Aguinsky, L.F., Toifl, A., Scharinger, A., Hössinger, A., Weinbub, J.: Surface Reaction and Topography Modeling of Fluorocarbon Plasma Etching Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), S. 229 - 232. https://doi.org/10.1109/SISPAD54002.2021.9592583 | |
| 1871. | Hadámek, T., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Goes, W., Selberherr, S., Sverdlov, V.: Temperature Increase in MRAM at Writing: A Finite Element Approach Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), S. 133 - 134. | |
| 1870. | Tyaginov, S., Grill, A., Vandemaele, M., Grasser, T., Hellings, G., Makarov, A., Jech, M., Linten, D., Kaczer, B.: A Compact Physics Analytical Model for Hot-Carrier Degradation Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3; S. 1 - 7. https://doi.org/10.1109/IRPS45951.2020.9128327 | |
| 1869. | Lenz, C., Scharinger, A., Hössinger, A., Weinbub, J.: A Novel Surface Mesh Coarsening Method for Flux-Dependent Topography Simulations of Semiconductor Fabrication Processes Vortrag: International Conferences on Scientific Computing in Electrical Engineering (SCEE), Eindhoven, The Netherlands; 16.02.2020 - 20.02.2020; in: "Book of Abstracts of the International Conferences on Scientific Computing in Electrical Engineering (SCEE)", (2020), S. 99 - 100. | |
| 1868. | Knobloch, T., Michl, J., Waldhör, D., Illarionov, Yu., Stampfer, B., Grill, A., Zhou, R., Wu, P., Waltl, M., Appenzeller, J., Grasser, T.: Analysis of Single Electron Traps in Nano-scaled MoS2 FETs at Cryogenic Temperatures Vortrag: Device Research Conference (DRC), Columbus, OH, USA - virtual; 21.06.2020 - 24.06.2020; in: "Proceedings of the Device Research Conference (DRC)", (2020), S. 52 - 53. | |
| 1867. | Kosina, H., Seiler, H., Sverdlov, V.: Analytical Formulae for the Surface Green´s Functions of Graphene and 1T´ MoS2 Nanoribbons Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 185 - 188. https://doi.org/10.23919/SISPAD49475.2020.9241650 | |
| 1866. | Illarionov, Yu., Knobloch, T., Smithe, K., Waltl, M., Grady, R., Waldhör, D., Pop, E., Grasser, T.: Anomalous Instabilities in CVD-MoS2 FETs Suppressed by High-Quality Al2O3 Encapsulation Poster: Device Research Conference (DRC), Columbus, OH, USA - virtual; 21.06.2020 - 24.06.2020; in: "Proceedings of the Device Research Conference (DRC)", (2020), S. 150 - 151. | |
| 1865. | Ruch, B., Jech, M., Pobegen, G., Grasser, T.: Applicability of Shockley-Read-Hall Theory for Interface States Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA - virtual; 12.12.2020 - 18.12.2020; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2020), S. 449 - 452. https://doi.org/10.1109/IEDM13553.2020.9372032 | |
| 1864. | Sverdlov, V., El-Sayed, A.-M., Kosina, H., Selberherr, S.: Ballistic Conductance in a Topological 1T´-MoS2 Nanoribbon Poster: International Symposium on Nanostructures: Physics and Technology (NANO), Minsk, Belarus - virtual; 28.09.2020 - 02.10.2020; in: "Proceedings of the International Symposium on Nanostructures: Physics and Technology (NANO)", (2020), ISBN: 978-5-93634-066-6; S. 200 - 201. | |
| 1863. | Fiorentini, S., Ender, J., Selberherr, S., Orio, R., Goes, W., Sverdlov, V.: Comprehensive Modeling of Coupled Spin and Charge Transport through Magnetic Tunnel Junctions Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 31.03.2020 - 02.04.2020; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), S. 112 - 113. | |
| 1862. | Fiorentini, S., Ender, J., Mohamedou, M., Sverdlov, V., Goes, W., Orio, R., Selberherr, S.: Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells Vortrag: SPIE Spintronics, San Diego, CA, USA - virtual (eingeladen); 24.08.2020 - 28.08.2020; in: "Proceedings of SPIE Spintronics", (2020), S. 11470-44. | |
| 1861. | Fiorentini, S., Ender, J., Mohamedou, M., Orio, R., Selberherr, S., Goes, W., Sverdlov, V.: Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport Modeling Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 209 - 212. https://doi.org/10.23919/SISPAD49475.2020.9241657 | |
| 1860. | Illarionov, Yu., Banshchikov, A., Knobloch, T., K Polyushkin, D., Wachter, S., Fedorov, V. V., Suturin, S. M., Stöger-Pollach, M., Vexler, M. I., Sokolov, N. S., Grasser, T.: Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics Vortrag: Device Research Conference (DRC), Columbus, OH, USA - virtual; 21.06.2020 - 24.06.2020; in: "Proceedings of the Device Research Conference (DRC)", (2020), S. 1 - 2. https://doi.org/10.1109/DRC50226.2020.9135160 | |
| 1859. | Waltl, M.: Defect Spectroscopy in SiC Devices Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual (eingeladen); 28.04.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), S. 1 - 9. https://doi.org/10.1109/IRPS45951.2020.9129539 | |
| 1858. | Tselios, K., Stampfer, B., Michl, J., Ioannidis, E., Enichlmair, H., Waltl, M.: Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 04.10.2020 - 08.10.2020; in: "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), S. 1 - 6. https://doi.org/10.1109/IIRW49815.2020.9312871 | |
| 1857. | Ender, J., Mohamedou, M., Fiorentini, S., Orio, R., Selberherr, S., Goes, W., Sverdlov, V.: Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 213 - 216. https://doi.org/10.23919/SISPAD49475.2020.9241662 | |
| 1856. | Filipovic, L.: Electromigration Model for Platinum Hotplates Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 315 - 318. https://doi.org/10.23919/SISPAD49475.2020.9241645 | |
| 1855. | Sverdlov, V., Fiorentini, S., Ender, J., Goes, W., Orio, R., Selberherr, S.: Emerging CMOS Compatible Magnetic Memories and Logic Vortrag: IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica (eingeladen); 25.02.2020 - 28.02.2020; in: "Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC)", (2020), ISBN: 978-1-7281-1044-8. https://doi.org/10.1109/LAEDC49063.2020.9073332 | |
| 1854. | Ruch, B., Pobegen, G., Schleich, C., Grasser, T.: Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6; S. 1 - 6. https://doi.org/10.1109/IRPS45951.2020.9129513 | |
| 1853. | Scharinger, A., Manstetten, P., Hössinger, A., Weinbub, J.: Generative Model Based Adaptive Importance Sampling for Flux Calculations in Process TCAD Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 39 - 42. https://doi.org/10.23919/SISPAD49475.2020.9241615 | |
| 1852. | Klemenschits, X., Selberherr, S., Filipovic, L.: Geometric Advection Algorithm for Process Emulation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 59 - 62. https://doi.org/10.23919/SISPAD49475.2020.9241678 | |
| 1851. | Filipovic, L., Selberherr, S.: Granularity Effects in Electromigration Vortrag: IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica (eingeladen); 25.02.2020 - 28.02.2020; in: "Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC)", (2020), ISBN: 978-1-7281-1044-8. https://doi.org/10.1109/LAEDC49063.2020.9072963 | |
| 1850. | Fiorentini, S., Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V.: Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM Vortrag: Meeting of the Electrochemical Society (ECS), Montreal, Canada - virtual; 10.05.2020 - 14.05.2020; in: "Abstracts of the Meeting of the Electrochemical Society (ECS)", MA2020-01/1389 (2020). https://doi.org/10.1149/MA2020-01241389mtgabs | |
| 1849. | Filipovic, L., Selberherr, S.: Integration of Gas Sensors with CMOS Technology Vortrag: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia - virtual (eingeladen); 16.03.2020 - 18.03.2020; in: "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2020), ISBN: 978-1-7281-2539-8; S. 294 - 297. https://doi.org/10.1109/EDTM47692.2020.9117828 | |
| 1848. | Illarionov, Yu., Knobloch, T., Waltl, M., Majumdar, S., Soikkeli, M., Kim, W., Wachter, S., K Polyushkin, D., Arpiainen, S., Prunnila, M., Mueller, A., Grasser, T.: Low Variability and 1010 On/Off Current Ratio in Flexible MoS2 FETs with Al2O3 Encapsulation Improved by Parylene N Vortrag: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 24.06.2020 - 26.06.2020; in: "Proceedings of the Electronic Materials Conference (EMC)", (2020), S. 25. | |
| 1847. | Milardovich, D., Jech, M., Waldhör, D., Waltl, M., Grasser, T.: Machine Learning Prediction of Formation Energies in a-SiO2 Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 339 - 342. https://doi.org/10.23919/SISPAD49475.2020.9241609 | |
| 1846. | Sverdlov, V.: Modeling Spin Transfer Torque Magnetoresistive Memory Vortrag: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual (eingeladen); 20.10.2020; in: "Proceedings of the Silvaco Users Global Event (SURGE)", (2020), S. 1. | |
| 1845. | Vasilev, A., Jech, M., Grill, A., Rzepa, G., Schleich, C., Makarov, A., Pobegen, G., Grasser, T., Waltl, M., Tyaginov, S. E.: Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 04.10.2020 - 08.10.2020; in: "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), S. 1 - 4. https://doi.org/10.1109/IIRW49815.2020.9312864 | |
| 1844. | Kosik, R., Cervenka, J., Kosina, H.: Numerical Solution of the Constrained Wigner Equation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 189 - 191. https://doi.org/10.23919/SISPAD49475.2020.9241624 | |
| 1843. | Kruv, A., Kaczer, B., Grill, A., Gonzalez, M., Franco, J., Linten, D., Goes, W., Grasser, T., De Wolf, I.: On the Impact of Mechanical Stress on Gate Oxide Trapping Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020 - 30.04.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), S. 1 - 5. https://doi.org/10.1109/IRPS45951.2020.9129541 | |
| 1842. | Fiorentini, S., Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V.: Perpendicular STT-MRAM Switching at Fixed Voltage and at Fixed Current Vortrag: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia - virtual; 16.03.2020 - 18.03.2020; in: "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2020), ISBN: 978-1-7281-2539-8; S. 341 - 344. https://doi.org/10.1109/EDTM47692.2020.9117985 | |
| 1841. | Toifl, A.: Physical Process TCAD: Victory Process´ Crystal Anisotropy Engine Vortrag: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual (eingeladen); 20.10.2020; in: "Proceedings of the Silvaco Users Global Event (SURGE)", (2020), S. 1. | |
| 1840. | Michl, J., Grill, A., Claes, D., Rzepa, G., Kaczer, B., Linten, D., Radu, I., Grasser, T., Waltl, M.: Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020 - 30.05.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3; S. 1 - 6. https://doi.org/10.1109/IRPS45951.2020.9128349 | |
| 1839. | Orio, R., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V.: Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 01.09.2020; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), S. 123 - 124. | |
| 1838. | Grill, A., Bury, E., Michl, J., Tyaginov, S., Linten, D., Grasser, T., Parvais, B., Kaczer, B., Waltl, M., Radu, I.: Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020 - 30.04.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3; S. 1 - 6. https://doi.org/10.1109/IRPS45951.2020.9128316 | |
| 1837. | Quell, M., Diamantopoulos, G., Hössinger, A., Weinbub, J.: Shared-Memory Block-Based Fast Marching Method for Hierarchical Meshes Vortrag: European Seminar on Computing (ESCO), Pilsen, Czech Republic - virtual; 08.06.2020 - 11.06.2020; in: "Proceedings of the European Seminar on Computing (ESCO)", (2020), 1 S. | |
| 1836. | Berens, J., Weger, M., Pobegen, G., Aichinger, T., Rescher, G., Schleich, C., Grasser, T.: Similarities and Differences of BTI in SiC and Si Power MOSFETs Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 29.03.2020 - 02.04.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6; S. 1 - 6. https://doi.org/10.1109/IRPS45951.2020.9129259 | |
| 1835. | Ballicchia, M., Nedjalkov, M., Weinbub, J.: Single Electron Control by a Uniform Magnetic Field in a Focusing Double-Well Potential Structure Vortrag: IEEE International Conference on Nanotechnology (NANO), Montreal, Canada - virtual; 29.07.2020 - 31.07.2020; in: "Proceedings of the IEEE International Conference on Nanotechnology (NANO)", (2020), ISBN: 978-1-7281-8264-3; S. 73 - 76. https://doi.org/10.1109/NANO47656.2020.9183565 | |
| 1834. | Waltl, M.: Spectroscopy of Single Defects in Semiconductor Transistors Vortrag: International Conference on Materials Science and Engineering (MatScience), San Francisco, CA, USA - virtual (eingeladen); 05.11.2020 - 06.11.2020; in: "Book of Abstracts of the International Conference on Materials Science and Engineering (MatScience)", (2020). | |
| 1833. | Sverdlov, V., El-Sayed, A.-M., Selberherr, S.: Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T´ Phase: A k∙p Study Vortrag: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lodz, Poland - virtual; 25.06.2020 - 27.06.2020; in: "Book of Abstracts of the International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES)", (2020), S. 58. | |
| 1832. | Orio, R., Makarov, A., Goes, W., Ender, J., Fiorentini, S., Selberherr, S., Sverdlov, V.: Switching of a Perpendicularly Magnetized Free-Layer by Spin-Orbit-Torques with Reduced Currents Vortrag: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, FL, USA - virtual; 13.09.2020 - 16.09.2020; in: "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2020), ISBN: 978-1-950492-37-4; S. 58 - 61. | |
| 1831. | Knobloch, T., Illarionov, Yu., Uzlu, B., Waltl, M., Neumaier, D., Lemme, M., Grasser, T.: The Impact of the Graphene Work Function on the Stability of Flexible GFETs Vortrag: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 24.06.2020 - 26.06.2020; in: "Proceedings of the Electronic Materials Conference (EMC)", (2020). | |
| 1830. | Grasser, T., Kaczer, B., O´Sullivan, B., Rzepa, G., Stampfer, B., Waltl, M.: The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020 - 30.04.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6; S. 1 - 6. https://doi.org/10.1109/IRPS45951.2020.9129198 | |
| 1829. | Sverdlov, V., Kosina, H.: Topologically Protected and Conventional Subbands in a 1T´-MoS2 Nanoribbon Channel Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 01.09.2020; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), S. 68 - 69. | |
| 1828. | Illarionov, Yu., Knobloch, T., Grasser, T.: Where Are the Best Insulators for 2D Field-Effect Transistors? Vortrag: Meeting of the Electrochemical Society (ECS), Montreal, Canada - virtual (eingeladen); 10.05.2020 - 14.05.2020; in: "Abstracts of the Meeting of the Electrochemical Society (ECS)", MA2020-01/844 (2020). https://doi.org/10.1149/MA2020-0110844mtgabs | |
| 1827. | Orio, R., Makarov, A., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V.: A Dynamical Approach to Fast and Reliable External Field Free Perpendicular Magnetization Reversal by Spin-Orbit Torques Poster: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 07.12.2019 - 11.12.2019; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM", (2019), 1 S. | |
| 1826. | Gnam, L., Manstetten, P., Quell, M., Rupp, K., Selberherr, S., Weinbub, J.: A Flexible Shared-Memory Parallel Mesh Adaptation Framework Vortrag: International Conference on Computational Science and Its Applications (ICCSA), Saint Petersburg , Russia; 01.07.2019 - 04.07.2019; in: "Proceedings of the International Conference on Computational Science and Its Applications (ICCSA)", (2019), ISBN: 978-1-7281-2847-4; S. 158 - 165. https://doi.org/10.1109/ICCSA.2019.00016 | |
| 1825. | Nedjalkov, M., Weinbub, J., Ballicchia, M., Selberherr, S., Dimov, I., Ferry, D.K., Rupp, K.: A Gauge-Invariant Wigner Equation for General Electromagnetic Fields Vortrag: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 67 - 68. | |
| 1824. | Aguinsky, L.F., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J.: A Mathematical Extension to Knudsen Diffusion Including Direct Flux and Accurate Geometric Description Poster: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 109 - 110. | |
| 1823. | Sverdlov, V., Selberherr, S.: A Monte Carlo Evaluation of Current and Low Frequency Current Noise at Spin-Dependent Hopping in Magnetic Tunnel Junctions Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 10.06.2019 - 14.06.2019; in: "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2019), S. 96. | |
| 1822. | Kosik, R., Kosina, H.: A Revised Wigner Function Approach for Stationary Quantum Transport Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 10.06.2019 - 14.06.2019; in: "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2019), S. 70 - 71. | |
| 1821. | Kosina, H., Indalecio, G.: A Two-Particle Monte Carlo Method for Carrier Transport in the Presence of Electron-Electron Scattering Vortrag: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 93 - 94. | |
| 1820. | Wu, Z., Franco, J., Claes, D., Rzepa, G., Roussel, P., Collaert, N., Groeseneken, G., Linten, D., Grasser, T., Kaczer, B.: Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling Vortrag: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 31.03.2019 - 04.04.2019; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3; S. 1 - 7. https://doi.org/10.1109/IRPS.2019.8720541 | |
| 1819. | Ceric, H., Zahedmanesh, H.: Advanced Modeling and Simulation of Cu Nano-Interconnects Reliability Poster: IEEE International Interconnect Technology Conference (IITC), Brussels, Belgium; 03.06.2019 - 06.06.2019; in: "Proceedings of the International Interconnect Technology Conference (IITC)", (2019). | |
| 1818. | Aguinsky, L.F., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J.: An Extended Knudsen Diffusion Model for Aspect Ratio Dependent Atomic Layer Etching Vortrag: International Workshop on Atomic Layer Etching (ALE), Bellevue, WA, USA; 21.07.2019 - 24.07.2019; in: "Abstracts of the International Conference on Atomic Layer Deposition (ALD) Featuring the International Workshop on Atomic Layer Etching (ALE)", (2019), S. 109. | |
| 1817. | Ceric, H., Selberherr, S., Zahedmanesh, H., Orio, R., Croes, K.: Assessment of Electromigration in Nano‐Interconnects Vortrag: International Conference on Reliability and Stress-Related Phenomena in Nanoelectronics (IRSP), San Jose, USA (eingeladen); 04.11.2019 - 06.11.2019; in: "Abstracts of the International Conference on Reliability and Stress-Related Phenomena in Nanoelectronics (IRSP)", (2019), S. 7. | |
| 1816. | Selberherr, S., Filipovic, L.: CMOS Compatible Gas Sensors Vortrag: International Conference on Materials Science and Engineering, San Francisco, CA, USA (eingeladen); 18.02.2019 - 20.02.2019; in: "Book of Abstracts of the International Conference on Materials Science and Engineering", (2019), 1 S. | |
| 1815. | Sverdlov, V., Selberherr, S.: CMOS Technology Compatible Magnetic Memories Vortrag: International Symposium on Next-Generation Electronics (ISNE), Zhengzhou, China (eingeladen); 09.10.2019 - 10.10.2019; in: "Proceedings of the International Symposium on Next Generation Electronics (ISNE)", (2019), ISBN: 978-1-7281-2062-1. https://doi.org/10.1109/ISNE.2019.8896421 | |
| 1814. | Filipovic, L., Selberherr, S.: CMOS-Compatible Gas Sensors Vortrag: International Conference on Microelectronics (MIEL), Nis, Serbia (eingeladen); 16.09.2019 - 18.09.2019; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2019), S. 9 - 16. https://doi.org/10.1109/MIEL.2019.8889585 | |
| 1813. | Grasser, T. (2019). CaF2 Insulators for Ultrascaled 2D Field Effect Transistors. Workshop “Wafer-scale Integration of 2D materials,” Aachen, Germany. (reposiTUm) | |
| 1812. | Illarionov, Y., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Vexler, M. I., Sokolov, N. S., Müller, T., Grasser, T. (2019). CaF2 Insulators for Ultrascaled 2D Field Effect Transistors. Graphene Week, Delft, Netherlands (the). (reposiTUm) | |
| 1811. | Waltl, M.: Characterization and Modeling of Single Charge Trapping in MOS Transistors Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA (eingeladen); 13.10.2019 - 17.10.2019; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), S. 1 - 9. https://doi.org/10.1109/IIRW47491.2019.8989880 | |
| 1810. | Sverdlov, V., Selberherr, S.: Combining Perpendicular and Shape Anisotropy for Optimal Switching of Advanced Spin-Orbit Torque Memory Cells Vortrag: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Singapore; 13.03.2019 - 15.03.2019; in: "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2019), ISBN: 978-1-5386-6508-4; S. 151 - 153. https://doi.org/10.1109/EDTM.2019.8731330 | |
| 1809. | Fiorentini, S., Orio, R., Goes, W., Ender, J., Sverdlov, V.: Comprehensive Comparison of Switching Models for Perpendicular Spin Transfer Torque MRAM Cells Poster: European Materials Research Society (EMRS), Warsaw, Poland; 16.09.2019 - 19.09.2019. | |
| 1808. | Fiorentini, S., Orio, R., Goes, W., Ender, J., Sverdlov, V.: Comprehensive Comparison of Switching Models for Perpendicular Spin-Transfer Torque MRAM Cells Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1; S. 57 - 60. https://doi.org/10.1109/SISPAD.2019.8870359 | |
| 1807. | Fiorentini, S., Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V.: Comprehensive Modeling of Switching in Perpendicular STT-MRAM Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 01.12.2019 - 06.12.2019; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0; S. 107 - 108. | |
| 1806. | Weinbub, J., Nedjalkov, M.: Computational Strategies for Two-Dimensional Wigner Monte Carlo Hauptvortrag: High Performance Computing Conference (HPC), Borovets, Bulgaria (eingeladen); 02.09.2019 - 06.09.2019; in: "Procedings of the High Performance Computing Conference (HPC)", (2019), S. 55 - 56. | |
| 1805. | Kosina, H., Kampl, M.: Current Estimation in Backward Monte Carlo Simulations Poster: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 129 - 130. | |
| 1804. | Ballicchia, M., Nedjalkov, M., Weinbub, J.: Effects of Repulsive Dopants on Quantum Transport in a Nanowire Poster: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 115 - 116. | |
| 1803. | Orio, R., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V.: Efficient Magnetic Field Free Switching of Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, France; 01.04.2019 - 03.04.2019; in: "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2019), S. 152 - 153. | |
| 1802. | Filipovic, L., Orio, R.: Electromigration in Nano-Interconnects Vortrag: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA (eingeladen); 24.05.2019 - 25.05.2019; in: "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), S. 2. | |
| 1801. | Ballicchia, M., Nedjalkov, M., Weinbub, J.: Electron Evolution and Boundary Conditions in the Wigner Signed-Particle Approach Vortrag: International Wigner Workshop (IW2), Chicago, IL, USA; 19.05.2019 - 20.05.2019; in: "Book of Abstracts of the International Wigner Workshop (IW2)", (2019), ISBN: 978-3-9504738-1-0; S. 24 - 25. | |
| 1800. | Weinbub, J., Ballicchia, M., Ferry, D.K., Nedjalkov, M.: Electron Interference and Wigner Function Negativity in Dopant Potential Structures Vortrag: International Wigner Workshop (IW2), Chicago, IL, USA; 19.05.2019 - 20.05.2019; in: "Book of Abstracts of the International Wigner Workshop (IW2)", (2019), ISBN: 978-3-9504738-1-0; S. 14 - 15. | |
| 1799. | Weinbub, J., Ballicchia, M., Nedjalkov, M.: Electron Interference in Single- and Double-Dopant Potential Structures Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 10.06.2019 - 14.06.2019; in: "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2019), S. 103 - 104. | |
| 1798. | Illarionov, Yu., Banshchikov, A., Vexler, M., K Polyushkin, D., Wachter, S., Thesberg, M., Sokolov, N. S., Mueller, T., Grasser, T.: Epitaxial CaF2: a Route towards Scalable 2D Electronics Poster: International Conference on Physics of 2D Crystals (ICP2DC4), Hangzhou, China; 10.06.2019 - 15.06.2019; in: "Proceedings of the International Conference on Physics of 2D Crystals (ICP2DC4)", (2019), S. 69. | |
| 1797. | Klemenschits, X., Selberherr, S., Filipovic, L.: Fast Volume Evaluation on Sparse Level Sets Poster: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 113 - 114. | |
| 1796. | Jech, M., Tyaginov, S., Kaczer, B., Franco, J., Jabs, D., Jungemann, C., Waltl, M., Grasser, T.: First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco , USA; 07.12.2019 - 11.12.2019; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019). https://doi.org/10.1109/IEDM19573.2019.8993630 | |
| 1795. | Vandemaele, M., Kaczer, B., Tyaginov, S. E., Stanojevic, Z., Makarov, A., Chasin, A., Bury, E., Mertens, H., Linten, D., Groeseneken, G.: Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs Vortrag: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 31.03.2019 - 04.04.2019; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3; S. 1 - 7. https://doi.org/10.1109/IRPS.2019.8720406 | |
| 1794. | O´Sullivan, B., Ritzenthaler, R., Rzepa, G., Wu, Z., Litta, E. D., Richard, O., Conard, T., Machkaoutsan, V., Fazan, P., Kim, C., Franco, J., Kaczer, B., Grasser, T., Spessot, A., Linten, D., Horiguchi, N.: Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-κ/Metal Gate Devices Vortrag: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 31.03.2019 - 04.04.2019; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3; S. 1 - 8. https://doi.org/10.1109/IRPS.2019.8720598 | |
| 1793. | Hössinger, A., Manstetten, P., Diamantopoulos, G., Quell, M., Weinbub, J.: High Performance Computing Aspects in Semiconductor Process Simulation Vortrag: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA (eingeladen); 24.05.2019 - 25.05.2019; in: "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), S. 3 - 4. | |
| 1792. | Manstetten, P., Diamantopoulos, G., Gnam, L., Aguinsky, L.F., Quell, M., Toifl, A., Scharinger, A., Hössinger, A., Ballicchia, M., Nedjalkov, M., Weinbub, J.: High Performance TCAD: From Simulating Fabrication Processes to Wigner Quantum Transport Vortrag: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 24.05.2019 - 25.05.2019; in: "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), S. 13. | |
| 1791. | Manstetten, P., Aguinsky, L.F., Selberherr, S., Weinbub, J.: High-Performance Ray Tracing for Nonimaging Applications Vortrag: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 24.05.2019 - 25.05.2019; in: "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), S. 20. | |
| 1790. | Sverdlov, V., Selberherr, S.: Hopping in a Multiple Ferromagnetic Terminal Configuration Vortrag: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 75 - 77. | |
| 1789. | Scharlotta, J., Bersuker, G., Tyaginov, S. E., Young, C., Haase, G., Rzepa, G., Waltl, M., Chohan, T., Iyer, S., Kotov, A., Zambelli, C., Guarin, F., Puglisi, F. M., Ostermaier, C.: IIRW 2019 Discussion Group II: Reliability for Aerospace Applications Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 13.10.2019 - 17.10.2019; in: "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2019), S. 1 - 4. https://doi.org/10.1109/IIRW47491.2019.8989910 | |
| 1788. | Ender, J., Orio, R., Fiorentini, S., Goes, W., Sverdlov, V.: Large-Scale Finite Element Micromagnetics Simulations using Open Source Software Poster: European Materials Research Society (EMRS), Warsaw, Poland; 16.09.2019 - 19.09.2019. | |
| 1787. | Ballicchia, M., Ferry, D.K., Nedjalkov, M., Weinbub, J.: Linking Wigner Function Negativity to Quantum Coherence in a Nanowire Vortrag: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 59 - 60. | |
| 1786. | Shah, A., Waltl, M.: Low Cost and High Performance Radiation Hardened Latch Design for Reliable Circuits Vortrag: IEEE International Conference on Electronics Circuits and Systems (ICECS), Genova, Italy; 27.11.2019 - 29.11.2019; in: "Proceedings of the IEEE International Conference on Electronics Circuits and Systems (ICECS)", (2019), S. 197 - 200. https://doi.org/10.1109/ICECS46596.2019.8964962 | |
| 1785. | Franco, J., Wu, Z., Rzepa, G., Vandooren, A., Arimura, H., Claes, D., Horiguchi, N., Collaert, N., Linten, D., Grasser, T., Kaczer, B.: Low Thermal Budget Dual-Dipole Gate Stacks Engineered for Sufficient BTI Reliability in Novel Integration Schemes Vortrag: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Singapore (eingeladen); 12.03.2019 - 15.03.2019; in: "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2019), ISBN: 978-1-5386-6508-4; S. 215 - 217. https://doi.org/10.1109/EDTM.2019.8731237 | |
| 1784. | Orio, R., Selberherr, S., Sverdlov, V.: Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques Vortrag: SPIE Spintronics, San Diego, CA, USA (eingeladen); 11.08.2019 - 15.08.2019; in: "Proceedings of SPIE Spintronics", (2019), S. 11090-123. | |
| 1783. | Waldhör, D., Wimmer, Y., El-Sayed, A.-M., Goes, W., Waltl, M., Grasser, T.: Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 13.10.2019 - 17.10.2019; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), S. 1 - 5. https://doi.org/10.1109/IIRW47491.2019.8989889 | |
| 1782. | Filipovic, L.: Modeling and Simulation of Atomic Layer Deposition Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1; S. 323 - 326. https://doi.org/10.1109/SISPAD.2019.8870462 | |
| 1781. | Makarov, A., Kaczer, B., Roussel, Ph., Chasin, A., Grill, A., Vandemaele, M., Hellings, G., El-Sayed, A.-M., Grasser, T., Linten, D., Tyaginov, S. E.: Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs Vortrag: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 31.03.2019 - 04.04.2019; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3. https://doi.org/10.1109/IRPS.2019.8720584 | |
| 1780. | Toifl, A., Quell, M., Hössinger, A., Babayan, A., Selberherr, S., Weinbub, J.: Novel Numerical Dissipation Scheme for Level-Set Based Anisotropic Etching Simulations Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1; S. 327 - 330. https://doi.org/10.1109/SISPAD.2019.8870443 | |
| 1779. | Makarov, A., Roussel, Ph., Bury, E., Vandemaele, M., Spessot, A., Linten, D., Kaczer, B., Tyaginov, S. E.: On Correlation Between Hot-Carrier Stress Induced Device Parameter Degradation and Time-Zero Variability Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2019 - 17.10.2019; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), ISBN: 978-1-7281-2203-8. https://doi.org/10.1109/IIRW47491.2019.8989882 | |
| 1778. | Kosik, R., Thesberg, M., Weinbub, J., Kosina, H.: On the Consistency of the Stationary Wigner Equation Vortrag: International Wigner Workshop (IW2), Chicago, IL, USA; 19.05.2019 - 20.05.2019; in: "Book of Abstracts of the International Wigner Workshop (IW2)", (2019), ISBN: 978-3-9504738-1-0; S. 30 - 31. | |
| 1777. | Quell, M., Diamantopoulos, G., Hössinger, A., Selberherr, S., Weinbub, J.: Parallelized Bottom-Up Correction in Hierarchical Re-Distancing for Topography Simulation Vortrag: High Performance Computing Conference (HPC), Borovets, Bulgaria; 02.09.2019 - 06.09.2019; in: "Procedings of the High Performance Computing Conference (HPC)", (2019), S. 45. | |
| 1776. | Quell, M., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J.: Parallelized Construction of Extension Velocities for the Level-Set Method Vortrag: International Conference on Parallel Processing and Applied Mathematics (PPAM), Bialystok, Poland; 08.09.2019 - 11.09.2019; in: "Proceedings of the International Conference on Parallel Processing and Applied Mathematics (PPAM)", (2019), S. 42. | |
| 1775. | Quell, M., Toifl, A., Hössinger, A., Selberherr, S., Weinbub, J.: Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1; S. 335 - 338. https://doi.org/10.1109/SISPAD.2019.8870482 | |
| 1774. | Majumdar, S., Soikkeli, M., Kim, W., Illarionov, Yu., Wachter, S., K Polyushkin, D., Arpiainen, S., Prunnila, M.: Passivation controlled field effect mobility in 2D semiconductor based FET devices for high performance logic circuit development on flexible platform Poster: Graphene Week, Helsinki, Finland; 23.09.2019 - 27.09.2019. | |
| 1773. | Schleich, C., Berens, J., Rzepa, G., Pobegen, G., Rescher, G., Tyaginov, S. E., Grasser, T., Waltl, M.: Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 07.12.2019 - 11.12.2019; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019). https://doi.org/10.1109/IEDM19573.2019.8993446 | |
| 1772. | Tyaginov, S. E., Chasin, A., Makarov, A., El-Sayed, A.-M., Jech, M., De Keersgieter, A., Eneman, G., Vandemaele, M., Franco, J., Linten, D., Kaczer, B.: Physics-based Modeling of Hot-Carrier Degradation in Ge NWFETs Vortrag: International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan; 02.09.2019 - 05.09.2019; in: "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2019), S. 565 - 566. | |
| 1771. | Nedjalkov, M., Weinbub, J., Ballicchia, M., Selberherr, S., Dimov, I., Ferry, D.K., Rupp, K.: Posedness of Stationary Wigner Equation Vortrag: International Wigner Workshop (IW2), Chicago, IL, USA; 19.05.2019 - 20.05.2019; in: "Book of Abstracts of the International Wigner Workshop (IW2)", (2019), ISBN: 978-3-9504738-1-0; S. 32 - 33. | |
| 1770. | Ballicchia, M., Nedjalkov, M., Selberherr, S., Weinbub, J.: Potentials for Single Electron State Processing Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 01.12.2019 - 06.12.2019; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0; S. 111 - 112. | |
| 1769. | Klemenschits, X., Manstetten, P., Filipovic, L., Selberherr, S.: Process Simulation in the Browser: Porting ViennaTS using WebAssembly Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1; S. 339 - 342. https://doi.org/10.1109/SISPAD.2019.8870374 | |
| 1768. | Diamantopoulos, G., Manstetten, P., Gnam, L., Simonka, V., Aguinsky, L.F., Quell, M., Toifl, A., Hössinger, A., Weinbub, J.: Recent Advances in High Performance Process TCAD Vortrag: SIAM Conference on Computational Science and Engineering, Spokane, WA, USA; 25.02.2019 - 01.03.2019; in: "CSE19 Abstracts", (2019), S. 335. | |
| 1767. | Illarionov, Yu., Grasser, T.: Reliability of 2D Field-Effect Transistors: from First Prototypes to Scalable Devices Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hangzhou, China (eingeladen); 02.07.2019 - 05.07.2019; in: "Proceedings of the International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)", (2019), S. 1 - 6. https://doi.org/10.1109/IPFA47161.2019.8984799 | |
| 1766. | Orio, R., Makarov, A., Selberherr, S., Gös, W., Ender, J., Fiorentini, S., Sverdlov, V.: Robust Magnetic Field Free Switching Scheme for Perpendicular Free Layer in Advanced Spin Orbit Torque Magnetoresistive Random Access Memory Vortrag: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 69 - 71. | |
| 1765. | Orio, R., Selberherr, S., Ender, J., Fiorentini, S., Goes, W., Sverdlov, V.: Robustness of the Two-Pulse Switching Scheme for SOT-MRAM Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 01.12.2019 - 06.12.2019; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0; S. 54 - 55. | |
| 1764. | Sverdlov, V., Selberherr, S.: Shot Noise in Magnetic Tunnel Junctions Vortrag: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, FL, USA; 06.07.2019 - 09.07.2019; in: "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) Volume II", (2019), ISBN: 978-1-950492-09-1; S. 19 - 22. | |
| 1763. | Makarov, A., Kaczer, B., Roussel, Ph., Chasin, A., Vandemaele, M., Hellings, G., El-Sayed, A.-M., Jech, M., Grasser, T., Linten, D., Tyaginov, S. E.: Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs Vortrag: International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan; 02.09.2019 - 05.09.2019; in: "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2019), S. 609 - 610. | |
| 1762. | Sverdlov, V., Selberherr, S.: Spin-Based CMOS-Compatible Memories Hauptvortrag: International Nanoelectronics Conference (INEC), Kuching, Malaysia (eingeladen); 03.07.2019 - 05.07.2019; in: "Proceedings of the International Nanoelectronics Conferences (INEC)", (2019), ISSN: 2159-3531. https://doi.org/10.1109/INEC.2019.8853848 | |
| 1761. | Sverdlov, V.: Spin-based Electronics: Recent Developments and Trends Vortrag: International Conference on Modern Problems in the Physics of Surfaces and Nanostructures (ICMPSN), Yaroslavl, Russia (eingeladen); 26.08.2019 - 29.08.2019; in: "Proceedings of the International Conference on Modern Problems in the Physics of Surfaces and Nanostructures (ICMPSN)", (2019), S. 7. | |
| 1760. | Sverdlov, V., Selberherr, S.: Spintronic Memories Vortrag: Energy-Materials-Nanotechnology Fall Meeting (EMN), Chengdu, China (eingeladen); 16.12.2019 - 19.12.2019; in: "Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN)", (2019), S. 19 - 21. | |
| 1759. | Stampfer, B., Simicic, M., Weckx, P., Abbasi, A., Kaczer, B., Grasser, T., Waltl, M.: Statistical Characterization of BTI and RTN using Integrated pMOS Arrays Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 13.10.2019 - 17.10.2019; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), S. 1 - 5. https://doi.org/10.1109/IIRW47491.2019.8989904 | |
| 1758. | Selberherr, S.: Status and Future of Solid-State Non-Volatile Memory Vortrag: International Conference on Frontier Sciences, Beijing, China (eingeladen); 06.11.2019 - 07.11.2019; in: "Book of Abstracts of the International Conference on Frontier Sciences", (2019), S. 97. | |
| 1757. | Makarov, A., Kaczer, B., Roussel, Ph., Chasin, A., Vandemaele, M., Hellings, G., El-Sayed, A.-M., Jech, M., Grasser, T., Linten, D., Tyaginov, S. E.: Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants Vortrag: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 23.09.2019 - 26.09.2019; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2019), ISBN: 978-1-7281-1539-9; S. 262 - 265. https://doi.org/10.1109/ESSDERC.2019.8901721 | |
| 1756. | Cervenka, J., Weinbub, J.: Superposed States and the Wigner Approach Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 10.06.2019 - 14.06.2019; in: "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2019), S. 50. | |
| 1755. | Orio, R., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V.: Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM Vortrag: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 23.09.2019 - 26.09.2019; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2019), ISSN: 2378-6558; S. 146 - 149. https://doi.org/10.1109/ESSDERC.2019.8901780 | |
| 1754. | Aguinsky, L.F., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J.: Three-Dimensional TCAD for Atomic Layer Processing Vortrag: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 24.05.2019 - 25.05.2019; in: "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), S. 5. | |
| 1753. | Orio, R., Makarov, A., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V.: Two-Pulse Magnetic Field Free Switching Scheme for Advanced Perpendicular SOT-MRAM Vortrag: International Symposium on Hysteresis Modeling and Micromagnetics (HMM), Heraklion, Greece; 19.05.2019 - 22.05.2019; in: "Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM)", (2019), S. 34. | |
| 1752. | Tyaginov, S., El-Sayed, A., Makarov, A., Chasin, A., Arimura, H., Vandemaele, M., Jech, M., Capogreco, E., Witters, L., Grill, A., De Keersgieter, A., Eneman, G., Linten, D., Kaczer, B.: Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 07.12.2019 - 11.12.2019; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), ISBN: 978-1-7281-4032-2; S. 498 - 501. https://doi.org/10.1109/IEDM19573.2019.8993644 | |
| 1751. | Diamantopoulos, G., Hössinger, A., Selberherr, S., Weinbub, J.: A Shared-Memory Parallel Multi-Mesh Fast Marching Method for Full and Narrow Band Re-Distancing Vortrag: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 03.06.2018 - 08.06.2018; in: "Proc. 6th European Seminar on Computing", (2018), 1 S. | |
| 1750. | Sverdlov, V., Selberherr, S.: A Single-Spin Switch Vortrag: International Electron Devices & Materials Symposium (IEDMS), Keelung, Taiwan (eingeladen); 13.11.2018 - 15.11.2018; in: "Conference Abstract Book", (2018). | |
| 1749. | Benam, M., Nedjalkov, M., Selberherr, S.: A Wigner Potential Decomposition in the Signed-Particle Monte Carlo Approach Vortrag: Ninth International Conference on Numerical Methods and Applications (NM&A'18), Borovets, Bulgaria; 20.08.2018 - 24.08.2018; in: "Book of Abstracts of the Ninth International Conference on Numerical Methods and Applications (NM&A'18)", (2018), S. 34 - 35. | |
| 1748. | Sverdlov, V., Selberherr, S.: Actual Problems in the Field of Spintronics Vortrag: Workshop on Applied Mathematics and Simulation for Semiconductors (AMaSIS), Berlin, Germany (eingeladen); 08.10.2018 - 10.10.2018; in: "Proceedings of the Workshop on Applied Mathematics and Simulation for Semiconductors (AMasIS) 2018", (2018), S. 40. | |
| 1747. | Illarionov, Yu., Smithe, K., Waltl, M., Grady, R., Deshmukh, R.G., Pop, E., Grasser, T.: Annealing and Encapsulation of CVD-MoS2 FETs with 1010 On/Off Current Ratio Poster: Device Research Conference (DRC), Santa-Barbara, CA, USA; 24.06.2018 - 27.06.2018; in: "Proceedings of the Device Research Conference (DRC)", (2018), ISBN: 978-1-5386-3028-0. https://doi.org/10.1109/DRC.2018.8442242 | |
| 1746. | Franco, J., Wu, Z., Rzepa, G., Vandooren, A., Arimura, H., Ragnarsson, L., Hellings, G., Brus, S., Cott, D., De Heyn, V., Groeseneken, G., Horiguchi, N., Ryckaert, J., Collaert, N., Linten, D., Grasser, T., Kaczer, B.: BTI Reliability Improvement Strategies in Low Thermal Budget Gate Stacks for 3D Sequential Integration Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 01.12.2018 - 05.12.2018; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2018), ISBN: 978-1-7281-1987-8; S. 34.2.1 - 34.2.4. https://doi.org/10.1109/IEDM.2018.8614559 | |
| 1745. | Tyaginov, S. E., Jech, M., Rzepa, G., Grill, A., El-Sayed, A.-M., Pobegen, G., Makarov, A., Grasser, T.: Border Trap Based Modeling of SiC Transistor Transfer Characteristics Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 07.10.2018 - 11.10.2018; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3. https://doi.org/10.1109/IIRW.2018.8727083 | |
| 1744. | Filipovic, L.: CMOS-Compatible Semiconductor-Based Gas Sensors Vortrag: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Whistler, British Columbia, Canada (eingeladen); 09.05.2018 - 11.05.2018; in: "Book of Abstracts of Emerging Technologies Communication Microsystems Optoelectronics Sensors", (2018). | |
| 1743. | Grasser, T., Stampfer, B., Waltl, M., Rzepa, G., Rupp, K., Schanovsky, F., Pobegen, G., Puschkarsky, K., Reisinger, H., O´Sullivan, B., Kaczer, B.: Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting from NBTI/PBTI Stress in nMOS/pMOS Transistors Vortrag: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 11.03.2018 - 15.03.2018; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), S. 2A.2-1 - 2A.2-10. | |
| 1742. | Illarionov, Yu., Stampfer, B., Zhang, F., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., Grasser, T.: Characterization of Single Defects: from Si to MoS2 FETs Poster: International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta; 29.05.2018 - 02.06.2018. | |
| 1741. | Gnam, L., Manstetten, P., Selberherr, S., Weinbub, J.: Comparison of High-Performance Graph Coloring Algorithms Vortrag: Vienna Young Scientists Symposium (VSS), Vienna, Austria; 07.06.2018 - 08.06.2018; in: "Proceedings of the Vienna Young Scientists Symposium", (2018), ISBN: 978-3-9504017-8-3; S. 30 - 31. | |
| 1740. | Sverdlov, V., Selberherr, S.: Current and Shot Noise at Spin-dependent Hopping in Magnetic Tunnel Junctions Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0; S. 107 - 108. | |
| 1739. | Vandemaele, M., Kaczer, B., Stanojevic, Z., Tyaginov, S. E., Makarov, A., Chasin, A., Mertens, H., Linten, D., Groeseneken, G.: Distribution Function Based Simulations of Hot-Carrier Degradation in Nanowire FETs Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 07.10.2018 - 11.10.2018; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3. https://doi.org/10.1109/IIRW.2018.8727081 | |
| 1738. | Kosina, H., Kampl, M.: Effect of Electron-Electron Scattering on the Carrier Distribution in Semiconductor Devices Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0; S. 18 - 21. https://doi.org/10.1109/SISPAD.2018.8551734 | |
| 1737. | Weinbub, J., Ballicchia, M., Nedjalkov, M.: Electron Interference in a Double-Dopant Potential Structure Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 25.11.2018 - 30.11.2018; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2018), ISBN: 978-3-901578-32-8; S. 52 - 53. | |
| 1736. | Sverdlov, V., Selberherr, S.: Electron Spin for Modern and Future Microelectronics Vortrag: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia (eingeladen); 01.10.2018 - 05.10.2018; in: "Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE) 2018", (2018), ISBN: 978-5-317-05917-0; S. 7. | |
| 1735. | Foster, S., Thesberg, M., Vargiamidis, V., Neophytou, N.: Electronic Transport Simulations for Advanced Thermoelectric Materials Poster: Thermoelectric Network UK Meeting, Edinburgh, UK; 14.02.2018. | |
| 1734. | Lahlalia, A., Le Neel, O., Shankar, R., Selberherr, S., Filipovic, L.: Enhanced Sensing Performance of Integrated Gas Sensor Devices Poster: EUROSENSORS, Graz, Austria; 09.09.2018 - 12.09.2018; in: "Proceedings of EUROSENSORS 2018", (2018), ISBN: 978-3-00-025217-4; Paper-Nr. 1508, 5 S. https://doi.org/10.3390/proceedings2131508 | |
| 1733. | Gnam, L., Selberherr, S., Weinbub, J.: Evaluation of Serial and Parallel Shared-Memory Distance-1 Graph Coloring Algorithms Vortrag: Ninth International Conference on Numerical Methods and Applications (NM&A'18), Borovets, Bulgaria; 20.08.2018 - 24.08.2018; in: "Book of Abstracts of the Ninth International Conference on Numerical Methods and Applications (NM&A'18)", (2018), S. 52. | |
| 1732. | Puschkarsky, K., Reisinger, H., Schlünder, C., Gustin, W., Grasser, T.: Fast Acquisition of Activation Energy Maps Using Temperature Ramps for Lifetime Modeling of BTI Vortrag: European Solid-State Device Research Conference (ESSDERC), Dresden, Germany; 03.09.2018 - 06.09.2018; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2018), S. 218 - 221. | |
| 1731. | Sverdlov, V., Makarov, A., Selberherr, S.: Fast, Reliable, and Field-free Perpendicular Magnetization Reversal in Advanced Spin-Orbit Torque MRAM by Two-pulse Switching Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 25.11.2018 - 30.11.2018; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2018), ISBN: 978-3-901578-32-8; S. 124 - 125. | |
| 1730. | Rupp, K., Rudolf, F., Weinbub, J.: Features of ViennaCL in PETSc Vortrag: Austrian HPC Meeting (AHPC), Linz; 19.02.2018 - 21.02.2018; in: "Book of Abstracts of the 2018 Austrian HPC Meeting (AHPC)", (2018), S. 18. | |
| 1729. | Makarov, A., Sverdlov, V., Selberherr, S.: Field-free Fast Reliable Deterministic Switching in Perpendicular Spin-Orbit Torque MRAM Cells Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0; S. 186 - 189. https://doi.org/10.1109/SISPAD.2018.8551716 | |
| 1728. | Hajian, S., Khakbaz, P., Moshayedi, M., Maddipatla, D., Narakathu, B., Turkani, V., Bazuin, B., Pourfath, M., Atashbar, M. (2018). Impact of Different Ratios of Fluorine, Oxygen, and Hydroxyl Surface Terminations on Ti₃C₂T͓x MXene as Ammonia Sensor: A First-Principles Study. In 2018 IEEE SENSORS (pp. 1–4), New Delhi, India. https://doi.org/10.1109/ICSENS.2018.8589699 (reposiTUm) | |
| 1727. | Medina-Bailón, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carillo-Nunez, H., Georgiev, V., Selberherr, S., Asenov, A.: Impact of the Effective Mass on the Mobility in Si Nanowire Transistors Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0; S. 297 - 300. https://doi.org/10.1109/SISPAD.2018.8551630 | |
| 1726. | Simonka, V., Hössinger, A., Selberherr, S., Weinbub, J.: Investigation of Post-Implantation Annealing for Phosphorus-Implanted 4H-Silicon Carbide Vortrag: International Conference on Microelectronic Devices and Technologies (MicDAT), Barcelona, Spain; 20.06.2018 - 22.06.2018; in: "Proceedings of the International Conference on Microelectronic Devices and Technologies (MicDAT)", (2018), S. 42 - 44. | |
| 1725. | Sverdlov, V., Makarov, A., Selberherr, S.: Magnetic Field-Free Fast Reliable Switching by Spin-Orbit Torque in Advanced MRAM Poster: Micromagnetics: Analysis, Numerics, Applications (MANA), Vienna; 08.11.2018 - 09.11.2018; in: "Proceedings of Micromagnetics: Analysis, Numerics, Applications (MANA) 2018", (2018), S. 32. | |
| 1724. | Filipovic, L., Orio, R.: Modeling the Influence of Grains and Material Interfaces on Electromigration Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0; S. 83 - 87. https://doi.org/10.1109/SISPAD.2018.8551746 | |
| 1723. | Indalecio, G., Kosina, H.: Monte Carlo Simulation of Electron-electron Interactions in Bulk Silicon Poster: The 12th International Conference on Scientific Computing in Electrical Engineering (SCEE 2018), Taormina; 23.09.2018 - 27.09.2018; in: "Book of Abstracts of The 12th International Conference on Scientific Computing in Electrical Engineering", (2018), S. 97 - 98. | |
| 1722. | Lee, J., Medina-Bailón, C., Berrada, S., Carillo-Nunez, H., Sadi, T., Georgiev, V., Nedjalkov, M., Selberherr, S., Asenov, A.: Multi-Scale Simulation Study of the Strained Si Nanowire FETs Vortrag: IEEE Nanotechnology Materials and Devices Conference (NMDC), Portland, USA; 14.10.2018 - 17.10.2018; in: "Proceedings of IEEE Nanotechnology Materials and Devices Conference (NMDC)", (2018), ISBN: 978-1-5386-1016-9. https://doi.org/10.1109/NMDC.2018.8605884 | |
| 1721. | Ghosh, J., Osintsev, D., Sverdlov, V., Ganguly, S.: Multilevel Parallelization Approach to Estimate Spin Lifetime in Silicon: Performance Analysis Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0; S. 79 - 80. | |
| 1720. | Franco, J., Wu, Z., Rzepa, G., Ragnarsson, L., Dekkers, H., Vandooren, A., Groeseneken, G., Horiguchi, N., Collaert, N., Linten, D., Grasser, T., Kaczer, B.: On the Impact of the Gate Metal Work-Function on the Charge Trapping Component of BTI Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, USA; 07.10.2018 - 11.10.2018; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3; S. 1 - 4. https://doi.org/10.1109/IIRW.2018.8727089 | |
| 1719. | Ballicchia, M., Weinbub, J., Dimov, I., Nedjalkov, M.: Recent Advances of the Wigner Signed-Particle Approach Vortrag: Annual Meeting of the Bulgarian Section of SIAM (BGSIAM), Sofia, Bulgaria (eingeladen); 18.12.2018 - 20.12.2018; in: "Abstracts Annual Meeting of the Bulgarian Section of SIAM (BGSIAM)", (2018), ISSN: 1313-3357; S. 18 - 19. | |
| 1718. | Illarionov, Yu., Molina- Mendoza, A.J., Waltl, M., Knobloch, T., Furchi, M. M., Mueller, T., Grasser, T.: Reliability of next-generation field-effect transistors with transition metal dichalcogenides Vortrag: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 11.03.2018 - 15.03.2018; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), ISBN: 978-1-5386-5479-8; 6 S. https://doi.org/10.1109/IRPS.2018.8353605 | |
| 1717. | Sverdlov, V., Makarov, A., Selberherr, S.: Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell Without External Magnetic Field Vortrag: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA; 08.07.2018 - 11.07.2018; in: "Proceedings of the 22nd World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2018), ISBN: 978-1-941763-81-0; S. 30 - 32. | |
| 1716. | Benam, M., Wołoszyn, M., Selberherr, S.: Self-consistent Monte Carlo Solution of Wigner and Poisson Equations Using an Efficient Multigrid Approach Vortrag: Annual Meeting of the Bulgarian Section of SIAM (BGSIAM), Sofia, Bulgaria; 18.12.2018 - 20.12.2018; in: "Abstracts Annual Meeting of the Bulgarian Section of SIAM (BGSIAM)", (2018), ISSN: 1313-3357; S. 20 - 21. | |
| 1715. | Sverdlov, V., Selberherr, S.: Shot Noise Enhancement at Spin-dependent Hopping Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 25.11.2018 - 30.11.2018; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2018), ISBN: 978-3-901578-32-8; S. 6 - 7. | |
| 1714. | Neophytou, N., Foster, S., Vargiamaidis, V., Chakraborty, D., Oliveira, L., Kumarasinghe, C., Thesberg, M.: Simulation Studies of Nanostructured Thermoelectric Materials Vortrag: IEEE International Conference on Nanotechnology (NANO), Cork, Ireland; 23.07.2018 - 26.07.2018; in: "Proceedings of the IEEE International Conference on Nanotechnology (NANO)", (2018). https://doi.org/10.1109/nano.2018.8626378 | |
| 1713. | Sverdlov, V., Selberherr, S.: Spin Correlations at Hopping in Magnetic Structures: From Tunneling Magnetoresistance to Single-Spin Transistor Vortrag: SPIE Spintronics, San Diego, CA, USA (eingeladen); 19.08.2018 - 23.08.2018; in: "Proceedings of SPIE Spintronics", (2018), S. 10732-112. | |
| 1712. | Sverdlov, V., Selberherr, S.: Spin-Dependent Trap-Assisted Tunneling: A Path Towards a Single Spin Switch Poster: Advanced Research Workshop on Future Trends in Microelectronics: Vingt Ans Après, Sardinia, Italy; 10.06.2018 - 16.06.2018; in: "Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après", (2018), S. 49. | |
| 1711. | Toifl, A., Simonka, V., Hössinger, A., Selberherr, S., Weinbub, J.: Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0; S. 336 - 339. https://doi.org/10.1109/SISPAD.2018.8551728 | |
| 1710. | Medina-Bailón, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carillo-Nunez, H., Georgiev, V., Selberherr, S., Asenov, A.: Study of the 1D Scattering Mechanisms´ Impact on the Mobility in Si Nanowire Transistors Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0; S. 15 - 16. | |
| 1709. | Woerle, J., Simonka, V., Müller, E., Hössinger, A., Sigg, H., Selberherr, S., Weinbub, J., Camarda, M., Grossner, U.: Surface Morphology of 4H-SiC After Thermal Oxidation Vortrag: European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham, UK; 02.09.2018 - 06.09.2018; in: "Proceedings of the European Conference on Silicon Carbide and Related Materials (ECSCRM)", (2018). | |
| 1708. | Sverdlov, V., Makarov, A., Selberherr, S.: Switching Current Reduction in Advanced Spin-Orbit Torque MRAM Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0; S. 57 - 58. | |
| 1707. | Filipovic, L., Lahlalia, A., Selberherr, S.: System-on-Chip Sensor Integration in Advanced CMOS Technology Vortrag: 233rd ECS Meeting (ECS), Seattle, Washington, USA (eingeladen); 13.05.2018 - 17.05.2018; in: "Proceedings of the 233rd ECS Meeting (ECS)", (2018), ISSN: 2151-2043. | |
| 1706. | Makarov, A., Sverdlov, V., Selberherr, S.: Two-Pulse Sub-ns Switching of a Perpendicular Spin-Orbit Torque MRAM Cell Without External Magnetic Field Poster: Advanced Research Workshop on Future Trends in Microelectronics: Vingt Ans Après, Sardinia, Italy; 10.06.2018 - 16.06.2018; in: "Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après", (2018), S. 51. | |
| 1705. | Makarov, A., Sverdlov, V., Selberherr, S.: Ultra-Fast Switching of a Free Magnetic Layer with out-of-Plane Magnetization in Spin-Orbit Torque MRAM Cells Vortrag: 233rd ECS Meeting (ECS), Seattle, Washington, USA; 13.05.2018 - 17.05.2018; in: "Proceedings of the 233rd ECS Meeting (ECS)", 85/213 (2018), ISSN: 2151-2043. | |
| 1704. | Puschkarsky, K., Grasser, T., Aichinger, T., Gustin, W., Reisinger, H.: Understanding and Modeling Transient Threshold Voltage Instabilities in SiC MOSFETs Vortrag: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA (eingeladen); 11.03.2018 - 15.03.2018; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), S. 3B.5-1 - 3B.5-10. | |
| 1703. | Klemenschits, X., Selberherr, S., Filipovic, L.: Unified Feature Scale Model for Etching in SF6 and Cl Plasma Chemistries Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0; S. 65 - 66. | |
| 1702. | Sverdlov, V., Selberherr, S.: A Single-Spin Switch Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 26.11.2017 - 01.12.2017; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", Society for Micro- and Nanoelectronics, (2017), ISBN: 978-3-901578-31-1; S. 93 - 94. | |
| 1701. | Manstetten, P., Hössinger, A., Weinbub, J., Selberherr, S.: Accelerated Direct Flux Calculations Using an Adaptively Refined Icosahedron Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2017), ISBN: 978-4-86348-612-6; S. 73 - 76. https://doi.org/10.23919/SISPAD.2017.8085267 | |
| 1700. | Illarionov, Yu., Rzepa, G., Waltl, M., Knobloch, T., Kim, J., Akinwande, D., Grasser, T.: Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs Vortrag: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan; 28.02.2017 - 02.03.2017; in: "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2017), ISBN: 978-1-5090-4661-4; S. 114 - 115. https://doi.org/10.1109/EDTM.2017.7947532 | |
| 1699. | Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S.: Analysis of a Spin-Transfer Torque Based Copy Operation of a Buffered Magnetic Processing Environment Vortrag: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA; 08.07.2017 - 11.07.2017; in: "Proceedings of the 21st World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2017), ISBN: 978-1-941763-59-9; S. 142 - 146. | |
| 1698. | Chasin, A., Franco, J., Kaczer, B., Putcha, V., Weckx, P., Ritzenthaler, R., Mertens, H., Horiguchi, N., Linten, D., Rzepa, G.: BTI Reliability and Time-Dependent Variability of Stacked Gate-All-Around Si Nanowire Transistors Poster: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4; S. 5C-4.1 - 5C-4.7. | |
| 1697. | Kaczer, B., Rzepa, G., Franco, J., Weckx, P., Chasin, A., Putcha, V., Bury, E., Simicic, M., Roussel, Ph. J., Hellings, G., Veloso, A., Matagne, P., Grasser, T., Linten, D.: Benchmarking Time-Dependent Variability of Junctionless Nanowire FETs Vortrag: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4; S. 2D-6.1 - 2D-6.7. | |
| 1696. | Grill, A., Stampfer, B., Waltl, M., Im, K.-S., Lee, J., Ostermaier, C., Ceric, H., Grasser, T.: Characterization and Modeling of Single Defects in GaN/AlGaN Fin-MIS-HEMTs Vortrag: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in: "Proceedings of IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4; S. 3B-5.1 - 3B-5.5. https://doi.org/10.1109/IRPS.2017.7936285 | |
| 1695. | Franco, J., Putcha, V., Vais, A., Sioncke, S., Waldron, N., Zhou, D., Rzepa, G., Roussel, P., Groeseneken, G., Heyns, M., Collaert, N., Linten, D., Grasser, T., Kaczer, B.: Characterization of Oxide Defects in InGaAs MOS Gate Stacks for High-Mobility n-Channel MOSFETs Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA (eingeladen); 02.12.2017 - 06.12.2017; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2017), 4 S. https://doi.org/10.1109/IEDM.2017.8268347 | |
| 1694. | Ballicchia, M., Weinbub, J., Nedjalkov, M., Selberherr, S.: Classical and Quantum Electron Evolution with a Repulsive Dopant Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 26.11.2017 - 01.12.2017; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", Society for Micro- and Nanoelectronics, (2017), ISBN: 978-3-901578-31-1; S. 105 - 106. | |
| 1693. | Manstetten, P., Simonka, V., Diamantopoulos, G., Gnam, L., Makarov, A., Hössinger, A., Weinbub, J.: Computational and Numerical Challenges in Semiconductor Process Simulation Vortrag: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 27.02.2017 - 03.03.2017; in: "CSE17 Abstracts", (2017), S. 46. | |
| 1692. | Sverdlov, V., Weinbub, J., Selberherr, S.: Current in Magnetic Tunnel Junctions at Spin-Dependent Hopping Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 26.11.2017 - 01.12.2017; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", Society for Micro- and Nanoelectronics, (2017), ISBN: 978-3-901578-31-1; S. 87 - 88. | |
| 1691. | Rzepa, G., Franco, J., Subirats, A., Jech, M., Chasin, A., Grill, A., Waltl, M., Knobloch, T., Stampfer, B., Chiarella, T., Horiguchi, N., Ragnarsson, L., Linten, D., Kaczer, B., Grasser, T.: Efficient Physical Defect Model Applied to PBTI in High-κ Stacks Poster: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4; S. XT-11.1 - XT-11.6. | |
| 1690. | Sverdlov, V., Weinbub, J., Selberherr, S.: Electron Spin at Work in Modern and Emerging Devices Vortrag: Energy-Materials-Nanotechnology Meeting on Quantum (EMN), Wien, Austria (eingeladen); 18.06.2017 - 22.06.2017; in: "Abstracts of the Energy-Materials-Nanotechnology Meeting on Quantum (EMN)", (2017), S. 31 - 33. | |
| 1689. | Illarionov, Yu., Waltl, M., Smithe, K., Pop, E., Grasser, T.: Encapsulated MoS2 FETs with Improved Performance and Reliability Vortrag: GRAPCHINA, Nanjing, China; 24.09.2017 - 26.09.2017; in: "Proceedings of the GRAPCHINA 2017", (2017), 1 S. | |
| 1688. | Sverdlov, V., Weinbub, J., Selberherr, S.: Enhanced Shot Noise as a Signature of Trap-Assisted Tunneling in Magnetic Tunnel Junctions: a Monte Carlo Approach Vortrag: 25th International Symposium on Nanostructures: Physics and Technology, Sankt Petersburg, Russland; 26.06.2017 - 30.06.2017; in: "Proceedings of the 25th International Symposium on Nanostructures: Physics and Technology", (2017), ISBN: 978-5-7422-5779-0; S. 132 - 133. | |
| 1687. | Diamantopoulos, G., Weinbub, J., Hössinger, A., Selberherr, S.: Evaluation of the Shared-Memory Parallel Fast Marching Method for Re-Distancing Problems Vortrag: International Conference on Computational Science and Its Applications (ICCSA), Trieste, Italy; 03.07.2017 - 06.07.2017; in: "Proceedings of the International Conference on Computational Science and Its Applications (ICCSA)", (2017), ISBN: 978-1-5386-3893-4; S. 1 - 8. https://doi.org/10.1109/ICCSA.2017.7999648 | |
| 1686. | Mills, R., Adams, M., Brown, J., Fabien, M., Isaac, T., Knepley, M., Rupp, K., Smith, B., Zhang, H.: Experiences, Optimizations, and Future Directions with Petsc on the 2nd Generation ("Knights Landing") Intel Xeon Phi Processor Vortrag: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 27.02.2017 - 03.03.2017; in: "CSE17 Abstracts", (2017), S. 370 - 371. | |
| 1685. | Selberherr, S., Windbacher, T., Makarov, A., Sverdlov, V.: Exploiting Spin-Transfer Torque for Non-Volatile Computing Vortrag: World Congress of Smart Materials (WCSM), Bangkok (eingeladen); 16.03.2017 - 18.03.2017; in: "Book of Abstracts of BIT's 3rd Annual World Congress of Smart Materials-2017", (2017), S. 130. | |
| 1684. | Foster, S., Thesberg, M., Neophytou, N.: Fully Quantum Mechanical Transport Simulations for the Calculation of the Thermoelectric Power Factor in Nanocomposite Materials Vortrag: European Conference on Thermoelectrics (ECT), Padova, Italy; 25.09.2017 - 27.09.2017; in: "Book of Abstracts 15th European Conference on Thermoelectrics", (2017). | |
| 1683. | Kampl, M., Kosina, H., Baumgartner, O.: Hot Carrier Study Including e-e Scattering Based on a Backward Monte Carlo Method Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2017), ISBN: 978-4-86348-612-6; S. 293 - 296. https://doi.org/10.23919/SISPAD.2017.8085322 | |
| 1682. | Makarov, A., Tyaginov, S. E., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M., Linten, D., Grasser, T.: Hot-Carrier Degradation in FinFETs: Modeling, Peculiarities, and Impact of Device Topology Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 02.12.2017 - 06.12.2017; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2017), ISBN: 978-1-5386-3559-9; S. 310 - 313. https://doi.org/10.1109/IEDM.2017.8268381 | |
| 1681. | Knobloch, T., Rzepa, G., Illarionov, Yu., Waltl, M., K Polyushkin, D., Pospischil, A., Furchi, M. M., Müller, T., Grasser, T.: Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors Vortrag: Meeting of the Electrochemical Society (ECS), National Harbor, Maryland, USA (eingeladen); 01.10.2017 - 05.10.2017; in: "Meeting Abstracts", ECS, MA2017-02(14): 837 (2017), 2 S. | |
| 1680. | Grasser, T., Waltl, M., Puschkarsky, K., Stampfer, B., Rzepa, G., Pobegen, G., Reisinger, H., Arimura, H., Kaczer, B.: Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up after BTI Stress Vortrag: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4; S. 6A-2.1 - 6A-2.6. | |
| 1679. | Kampl, M., Kosina, H.: Investigation of Hot-Carrier Effects Using a Backward Monte Carlo Method and Full Bands Poster: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2017), S. 147 - 148. | |
| 1678. | Sverdlov, V., Mahmoudi, H., Windbacher, T., Makarov, A., Weinbub, J., Selberherr, S.: MTJs - Spin-Based Binary Memristors for Non-Volatile Memory and Logic Applications Vortrag: Energy-Materials-Nanotechnology Meeting on Memristive Switching & Network (EMN), Milan, Italy (eingeladen); 14.08.2017 - 18.08.2017; in: "Abstracts of the Energy-Materials-Nanotechnology Meeting on Memristive Switching & Network (EMN)", (2017), S. 33 - 34. | |
| 1677. | Filipovic, L., de Orio, R.L., Zisser, W. H., Selberherr, S.: Modeling Electromigration in Nanoscaled Copper Interconnects Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2017), ISBN: 978-4-86348-612-6; S. 161 - 164. https://doi.org/10.23919/SISPAD.2017.8085289 | |
| 1676. | Sverdlov, V., Weinbub, J., Selberherr, S.: Modeling Spin-Dependent Phenomena for New Device Applications Vortrag: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA (eingeladen); 27.02.2017 - 03.03.2017; in: "CSE17 Abstracts", (2017), S. 45 - 46. | |
| 1675. | Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S.: Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide Poster: International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington D.C., USA; 17.09.2017 - 22.09.2017; in: "Proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM)", (2017). | |
| 1674. | Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S.: Modeling of Electrical Activation Ratios of Phosphorus and Nitrogen Doped Silicon Carbide Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2017), ISBN: 978-4-86348-612-6; S. 125 - 128. https://doi.org/10.23919/SISPAD.2017.8085280 | |
| 1673. | Sadi, T., Towie, E., Nedjalkov, M., Asenov, A., Selberherr, S.: Monte Carlo Particles in Quantum Wires: Effects of the Confinement Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 05.06.2017 - 09.06.2017; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2017), S. 89 - 90. | |
| 1672. | Thesberg, M., Kosina, H.: NEGF Through Finite-Volume Discretization Vortrag: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2017), S. 173 - 174. | |
| 1671. | Sverdlov, V., Makarov, A., Weinbub, J., Selberherr, S.: Non-Volatility by Spin in Modern Nanoelectronics Vortrag: International Conference on Microelectronics (MIEL), Nis, Serbia (eingeladen); 09.10.2017 - 11.10.2017; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2017), ISBN: 978-1-5386-2562-0; S. 7 - 14. https://doi.org/10.1109/MIEL.2017.8190061 | |
| 1670. | Cervenka, J., Filipovic, L.: Numerical Aspects of the Deterministic Solution of the Wigner Equation Poster: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017; in: "Book of Abstracts of the International Wigner Workshop (IW2)", Institute for Microelectronics, TU Wien, (2017), ISBN: 978-3-200-05129-4; S. 42 - 43. | |
| 1669. | Kosik, R., Kampl, M., Kosina, H.: On the Characteristic Neumann Equation and the Wigner Equation Vortrag: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017; in: "Book of Abstracts of the International Wigner Workshop (IW2)", Institute for Microelectronics, TU Wien, (2017), ISBN: 978-3-200-05129-4; S. 26 - 27. | |
| 1668. | Knobloch, T., Rzepa, G., Illarionov, Yu., Waltl, M., Schanovsky, F., Jech, M., Stampfer, B., Furchi, M. M., Müller, T., Grasser, T.: Physical Modeling of the Hysteresis in MoS2 Transistors Vortrag: European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium; 11.09.2017 - 14.09.2017; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2017), S. 284 - 287. https://doi.org/10.1109/ESSDERC.2017.8066647 | |
| 1667. | Sanan, P., Schenk, O., Bollhoefer, M., Rupp, K., May, D.: Preconditioners for Stokes Flow with Highly Heterogeneous Viscosity Structure: Saddle-Point Smoothing Via Local Incomplete Factorization Vortrag: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 27.02.2017 - 03.03.2017; in: "CSE17 Abstracts", (2017), S. 258. | |
| 1666. | Illarionov, Yu., Waltl, M., Jech, M., Kim, J., Akinwande, D., Grasser, T.: Reliability of Black Phosphorus Field-Effect Transistors with Respect to Bias-Temperature and Hot-Carrier Stress Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1; S. 6A-6.1 - 6A-6.6. https://doi.org/10.1109/IRPS.2017.7936338 | |
| 1665. | Sverdlov, V., Selberherr, S.: Shot noise at spin-dependent hopping in tunnel junctions with ferromagnetic electrodes Vortrag: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Warsaw, Poland (eingeladen); 28.05.2017 - 30.05.2017; in: "Proceedings of the ETCMOS 2017", (2017), ISBN: 1927500869; S. 57. | |
| 1664. | Sverdlov, V., Selberherr, S.: Shot noise at spin-dependent hopping in tunnel junctions with ferromagnetic electrodes Vortrag: APS March Meeting, New Orleans, USA; 13.03.2017 - 17.03.2017; in: "Bulletin of the APS April Meeting 2017", (2017), ISSN: 0003-0503. | |
| 1663. | Meller, G., Selberherr, S.: Simulation of Injection Currents into Disordered Molecular Conductors Poster: International Conference on Advanced Nano Materials (ANM), Aveiro, Portugal; 19.07.2017 - 21.07.2017; in: "Proceedings of the 9thInternational Conference on Advanced Nano Materials (ANM)", (2017). | |
| 1662. | Sverdlov, V., Weinbub, J., Selberherr, S.: Spin-Based Non-Volatile Memory and Logic in Modern Nanoelectronics Hauptvortrag: BIT's Annual World Congress of Nano Science & Technology, Fukuoka (eingeladen); 24.10.2017 - 26.10.2017; in: "Abstracts of the BIT's 7th Annual World Congress of Nano Science & Technology-2017", (2017), S. 343. | |
| 1661. | Sverdlov, V., Weinbub, J., Selberherr, S.: Spin-Dependent Trap-Assisted Tunneling in Magnetic Tunnel Junctions: A Monte Carlo Study Vortrag: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2017), S. 88 - 90. | |
| 1660. | Sverdlov, V., Weinbub, J., Selberherr, S.: Spintronics as a Non-Volatile Complement to Nanoelectronics Vortrag: International Conference on Microelectronics, Devices and Materials (MIDEM), Ljubljana, Slovenia (eingeladen); 04.10.2017 - 06.10.2017; in: "Proceedings of the 53rd International Conference on Microelectronics, Devices and Materials (MIDEM 2017)", (2017), ISBN: 978-961-92933-7-9; 10 S. | |
| 1659. | Ullmann, B., Jech, M., Tyaginov, S. E., Waltl, M., Illarionov, Yu., Grill, A., Puschkarsky, K., Reisinger, H., Grasser, T.: The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 04.04.2017 - 06.04.2017; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1; S. XT-10.1 - XT-10.6. https://doi.org/10.1109/IRPS.2017.7936424 | |
| 1658. | Puschkarsky, K., Reisinger, H., Aichinger, T., Gustin, W., Grasser, T.: Threshold Voltage Hysteresis in SiC MOSFETs and Its Impact on Circuit Operation Vortrag: IEEE International Integrated Reliability Workshop (IIRW), Fallen Leaf Lake, CA, USA; 08.10.2017 - 12.10.2017; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2017), S. 1 - 5. | |
| 1657. | Gnam, L., Weinbub, J., Hössinger, A., Selberherr, S.: Towards a Metric for an Automatic Hull Mesh Coarsening Strategy Vortrag: Vienna Young Scientists Symposium (VSS), Wien, Österreich; 01.06.2017 - 02.06.2017; in: "Proceedings of the Vienna Young Scientists Symposium", (2017), ISBN: 978-3-9504017-5-2; S. 118 - 119. | |
| 1656. | Gnam, L., Weinbub, J., Rupp, K., Rudolf, F., Selberherr, S.: Using Graph Partitioning and Coloring for Flexible Coarse-Grained Shared-Memory Parallel Mesh Adaptation Vortrag: International Meshing Roundtable (IMR), Barcelona, Spanien; 18.09.2017 - 21.09.2017; in: "Proceedings of the 26th International Meshing Roundtable (IMR26)", (2017), 5 S. | |
| 1655. | Rudolf, F., Morhammer, A., Rupp, K., Weinbub, J.: VSC School Project: Performance Enhancements of Algebraic Multigrid Methods in ViennaCL Vortrag: Austrian HPC Meeting (AHPC), Grundlsee; 01.03.2017 - 03.03.2017; in: "Book of Abstracts of the 2017 Austrian HPC Meeting (AHPC)", (2017), 1 S. | |
| 1654. | Ellinghaus, P., Nedjalkov, M., Weinbub, J., Selberherr, S.: Wigner Analysis of Surface Roughness in Quantum Wires Vortrag: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017; in: "Book of Abstracts of the International Wigner Workshop (IW2)", Institute for Microelectronics, TU Wien, (2017), ISBN: 978-3-200-05129-4; S. 40 - 41. | |
| 1653. | Ellinghaus, P., Weinbub, J., Nedjalkov, M., Selberherr, S.: Wigner Modelling of Surface Roughness in Quantum Wires Poster: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2017), S. 171 - 172. | |
| 1652. | Weinbub, J., Nedjalkov, M., Dimov, I., Selberherr, S.: Wigner-Signed Particles Study of Double Dopant Quantum Effects Poster: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017; in: "Book of Abstracts of the International Wigner Workshop (IW2)", Institute for Microelectronics, TU Wien, (2017), ISBN: 978-3-200-05129-4; S. 50 - 51. | |
| 1651. | Djuricic, A., Puttonen, E., Dorninger, P., Nothegger, C., Harzhauser, M., Mandic, O., Székely, B., Pfeifer, N. (2016). 3D Laser Scanning and Paleontology. In Proceedings (pp. 100–101), Wien, Austria. (reposiTUm) | |
| 1650. | Rupp, K., Weinbub, J.: A Computational Scientist's Perspective on Current and Future Hardware Architectures Vortrag: Austrian HPC Meeting (AHPC), Grundlsee, Austria; 22.02.2016 - 24.02.2016; in: "Book of Abstracts of the 2016 Austrian HPC Meeting (AHPC)", (2016), S. 24. | |
| 1649. | Sharma, P., Tyaginov, S. E., Rauch, S. E., Franco, J., Kaczer, B., Makarov, A., Vexler, M., Grasser, T.: A Drift-Diffusion-Based Analytic Description of the Energy Distribution Function for Hot-Carrier Degradation in Decananometer nMOSFETs Vortrag: European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland; 12.09.2016 - 15.09.2016; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2016), ISBN: 978-1-5090-2969-3; S. 428 - 431. https://doi.org/10.1109/ESSDERC.2016.7599677 | |
| 1648. | Papaleo, S., Ceric, H.: A Finite Element Method Study of Delamination at the Interface of the TSV Interconnects Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA USA; 17.04.2016 - 21.04.2016; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), ISBN: 978-1-4673-9136-8; S. PA-2-1 - PA-2-4. https://doi.org/10.1109/IRPS.2016.7574626 | |
| 1647. | Ghiassi, N., Mahdavi, A. (2016). A Novel Approach to High-Resolution Urban-Level Building Energy Modeling. In Proceedings of Vienna Young Scientists Symposium 2016 (p. 2), Vienna, Austria. (reposiTUm) | |
| 1646. | Illarionov, Yu., Rzepa, G., Waltl, M., Pandey, H., Kataria, S., Passi, V., Lemme, M., Grasser, T.: A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETs Vortrag: Device Research Conference, Newark, Delaware, USA; 19.06.2016 - 22.06.2016; in: "74th Device Research Conference Digest", (2016), ISBN: 978-1-5090-2827-6; S. 89 - 90. | |
| 1645. | Proskurnina, O., Pont, U., Schuss, M., Heiduk, E., Schober, P., Mahdavi, A. (2016). A Computational Inquiry Into the Application of Vacuum Glazing in Building Retrofit. In Proceedings of Vienna Young Scientists Symposium 2016 (pp. 26–27), Vienna, Austria. (reposiTUm) | |
| 1644. | Tahmasebi, F., Mahdavi, A. (2016). An Inquiry Into Reliability of Occupant Behaviour Models for Building Performance Simulation. In Proceedings of Vienna Young Scientists Symposium 2016 (p. 2), Vienna, Austria. (reposiTUm) | |
| 1643. | Giering, K., Rott, G.A., Rzepa, G., Reisinger, H., Puppala, A., Reich, T., Gustin, W., Grasser, T., Jancke, R.: Analog-circuit NBTI Degradation and Time-dependent NBTI Variability: An Efficient Physics-Based Compact Model Vortrag: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), S. 4C-4-1 - 4C-4-6. https://doi.org/10.1109/IRPS.2016.7574540 | |
| 1642. | Thesberg, M., Neophytou, N., Kosina, H.: Calculating the Power Factor of Nano-Composite Materials from Fully Quantum-Mechanical Large-Scale Simulations Vortrag: European Conference on Thermoelectrics (ECT), Lisbon, Portugal; 20.09.2016 - 23.09.2016; in: "Book of Abstracts 14th European Conference on Thermoelectrics", (2016). | |
| 1641. | Rzepa, G., Waltl, M., Gös, W., Kaczer, B., Franco, J., Chiarella, T., Horiguchi, N., Grasser, T.: Complete Extraction of Defect Bands Responsible for Instabilities in n and pFinFETs Vortrag: International Symposium on VLSI Technology, Honolulu, HI, USA; 14.06.2016 - 16.06.2016; in: "2016 Symposium on VLSI Technology Digest of Technical Papers", (2016), ISBN: 978-1-5090-0638-0; S. 208 - 209. | |
| 1640. | Sverdlov, V., Selberherr, S.: Effects of Spin Relaxation on Trap-Assisted Tunneling Through Ferromagnetic Metal-Oxide-Semiconductor Structures Vortrag: APS March Meeting, Baltimore, USA; 14.03.2016 - 18.03.2016; in: "Bulletin of the American Physical Society (APS March Meeting)", 61/1 (2016), ISSN: 0003-0503; 1 S. | |
| 1639. | Filipovic, L., Selberherr, S.: Effects of the Deposition Process Variation on the Performance of Open TSVs Poster: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 31.05.2016 - 03.06.2016; in: "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), ISBN: 978-1-5090-1204-6; S. 2188 - 2195. https://doi.org/10.1109/ECTC.2016.177 | |
| 1638. | Rovitto, M., Ceric, H.: Electromigration Induced Voiding and Resistance Change in Three-Dimensional Copper Through Silicon Vias Vortrag: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 31.05.2016 - 03.06.2016; in: "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), ISBN: 978-1-5090-1204-6; S. 550 - 556. https://doi.org/10.1109/ECTC.2016.49 | |
| 1637. | Selinger, A., Rupp, K., Selberherr, S.: Evaluation of Mobile ARM-Based SoCs for High Performance Computing Vortrag: High Performance Computing Symposium (HPC), Pasadena, CA, USA; 03.04.2016 - 06.04.2016; in: "Proceedings of the 24th High Performance Computing Symposium", (2016), ISBN: 978-1-5108-2318-1; S. 21:1 - 21:7. https://doi.org/10.22360/SpringSim.2016.HPC.022 | |
| 1636. | Neophytou, N., Thesberg, M., Kosina, H.: Examining the Effectiveness of Energy-Filtering in 1D vs. 2D Structures Using Quantum Mechanical Transport Simulations Vortrag: European Conference on Thermoelectrics (ECT), Lisbon, Portugal; 20.09.2016 - 23.09.2016; in: "Book of Abstracts 14th European Conference on Thermoelectrics", (2016). | |
| 1635. | Simonka, V., Nawratil, G., Hössinger, A., Weinbub, J., Selberherr, S.: Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 25.01.2016 - 27.01.2016; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8; S. 128 - 129. | |
| 1634. | Naeimi, V., Elefante, S., Cao, S., Wagner, W., Dostálová, A., Bauer-Marschallinger, B. (2016). Geophysical Parameters Retrieval From Sentinel-1 SAR Data: A Case Study for High Performance Computing at EODC. In Proceedings of the 24th High Performance Computing Symposium, Pasadena, CA, USA. (reposiTUm) | |
| 1633. | Ullmann, B., Grill, A., Manstetten, P., Jech, M., Kampl, M., Zisser, W., Filipovic, L., Thesberg, M., Rudolf, F., Windbacher, T., Cervenka, J., Katterbauer, M., Weinbub, J. (2016). Ihr Smartphone - Ein Supercomputer Vor 20 Jahren. Ein Einblick in Die Mikro- Und Nanoelektronik. Lange Nacht der Forschung 2016, Wien, Austria. (reposiTUm) | |
| 1632. | Windbacher, T., Ullmann, B., Grill, A., Weinbub, J. (2016). Ihr Smartphone - Ein Supercomputer Vor 20 Jahren. Ein Einblick in Die Mikro- Und Nanoelektronik. European Researchers’ Night: beSCIENCEd 2016, Wien, Austria. (reposiTUm) | |
| 1631. | Filipovic, L., Singulani, A. P., Roger, F., Carniello, S., Selberherr, S.: Impact of Across-Wafer Variation on the Electrical Performance of TSVs Vortrag: IEEE International Interconnect Technology Conference (IITC), San Jose, CA, USA; 23.05.2016 - 26.05.2016; in: "Proceedings of the IEEE International Interconnect Technology Conference (IITC)", (2016), ISBN: 978-1-5090-0386-0; S. 130 - 132. https://doi.org/10.1109/IITC-AMC.2016.7507707 | |
| 1630. | Windbacher, T., Malm, B.G., Sverdlov, V., Östling, M., Selberherr, S.: Influence of the Free Layer Alignment on the Reliability of a Non-Volatile Magnetic Shift Register Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 04.12.2016 - 09.12.2016; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", Society for Micro- and Nanoelectronics, (2016), ISBN: 978-3-901578-30-4; S. 43. | |
| 1629. | Pont, U., Proskurnina, O., Taheri, M., Kropf, A., Sommer, B., Sommer-Nawara, M., Adam, G., Mahdavi, A. (2016). Input Data Quality for Building Energy Certification: Recent Progress in the EDEN Project. In Proceedings of Vienna Young Scientists Symposium 2016 (p. 2), Vienna, Austria. (reposiTUm) | |
| 1628. | Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S.: Layer Coupling and Read Disturbances in a Buffered Magnetic Logic Environment Vortrag: SPIE Spintronics, San Diego, CA, USA (eingeladen); 28.08.2016 - 01.09.2016; in: "Proceedings of SPIE Spintronics", (2016), S. 9931-93. | |
| 1627. | Windbacher, T., Mahmoudi, H., Makarov, A., Sverdlov, V., Selberherr, S.: Logic-in-memory: A Non-Volatile Processing Environment for the Post CMOS Age Vortrag: SISPAD Workshop, Nürnberg, Germany; 05.09.2016; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016). | |
| 1626. | Sverdlov, V., Makarov, A., Windbacher, T., Selberherr, S.: Magnetic Field Dependent Tunneling Magnetoresistance through a Quantum Well between Ferromagnetic Contacts Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9; S. 315 - 318. https://doi.org/10.1109/SISPAD.2016.7605210 | |
| 1625. | Windbacher, T., Sverdlov, V., Selberherr, S.: Magnetic Nonvolatile Processing Environment Vortrag: I International Scientific and Practical Conference Innovation in the Software Systems of Trains, Samara, Russia (eingeladen); 19.05.2016 - 20.05.2016; in: "Program and Abstracts of the I International Scientific and Practical Conference Innovation in the Software Systems of Trains", SamGUPS, (2016), S. 42 - 43. | |
| 1624. | Papaleo, S., Rovitto, M., Ceric, H.: Mechanical Effects of the Volmer-Weber Growth in the TSV Sidewall Vortrag: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 31.05.2016 - 03.06.2016; in: "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), ISBN: 978-1-5090-1204-6; S. 1617 - 1622. https://doi.org/10.1109/ECTC.2016.19 | |
| 1623. | Nedjalkov, M., Weinbub, J., Selberherr, S.: Modeling Carrier Transport in Nanoscale Semiconductor Devices Vortrag: BIT's Annual World Congress of Nano Science & Technology, Singapore (eingeladen); 26.10.2016 - 28.10.2016; in: "Abstracts of the BIT's 6th Annual World Congress of Nano Science & Technology-2016", (2016), S. 377. | |
| 1622. | Manstetten, P., Filipovic, L., Hössinger, A., Weinbub, J., Selberherr, S.: Modeling Neutral Particle Flux in High Aspect Ratio Holes using a One-Dimensional Radiosity Approach Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 25.01.2016 - 27.01.2016; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8; S. 68 - 69. | |
| 1621. | Filipovic, L., Selberherr, S.: Modeling the Deposition and Stress Generation in Thin Films for CMOS-Integrated Gas Sensors Vortrag: World Congress of Smart Materials (WCSM), Singapore (eingeladen); 04.03.2016 - 06.03.2016; in: "Proceedings of the BIT's 2nd Annual World Congress of Smart Materials 2016", (2016), S. 517. | |
| 1620. | Grames, J., Fürnkranz-Prskawetz, A., Grass, D., Viglione, A., Blöschl, G. (2016). Modeling the Interaction of Flooding Events and Economic Growth. In VIENNA young SCIENTIST SYMPOSIUM (pp. 92–93), Austria. (reposiTUm) | |
| 1619. | Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S.: Nanoelectronics with Spin Vortrag: World Congress and Expo on Nanotechnology and Materials Science, Dubai, United Arab Emirates (eingeladen); 04.04.2016 - 06.04.2016; in: "Book of Abstracts of the World Congress and Expo on Nanotechnology and Materials Science", (2016), S. 19 - 20. | |
| 1618. | Waltl, M., Grill, A., Rzepa, G., Gös, W., Franco, J., Kaczer, B., Mitard, J., Grasser, T.: Nanoscale Evidence for the Superior Reliability of SiGe High-k pMOSFETs Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), S. XT-02-1 - XT-02-6. https://doi.org/10.1109/IRPS.2016.7574644 | |
| 1617. | Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S.: Novel Magnetic Devices for Memory and Non-Volatile Computing Applications Vortrag: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Montreal, QC, Canada; 25.05.2016 - 27.05.2016; in: "2016 Conference Program of the Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS)", (2016), 14 S. | |
| 1616. | Tyaginov, S. E., Makarov, A., Jech, M., Franco, J., Sharma, P., Kaczer, B., Grasser, T.: On the Effect of Interface Traps on the Carrier Distribution Function During Hot-Carrier Degradation Poster: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 09.10.2016 - 13.10.2016; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2016), ISBN: 978-1-5090-4193-0; S. 95 - 98. https://doi.org/10.1109/IIRW.2016.7904911 | |
| 1615. | Rescher, G., Pobegen, G., Aichinger, T., Grasser, T.: On the Subthreshold Drain Current Sweep Hysteresis of 4H-SiC nMOSFETs Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 03.12.2016 - 07.12.2016; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2016), ISBN: 978-1-5090-3902-9; S. 10.8.1 - 10.8.4. https://doi.org/10.1109/IEDM.2016.7838392 | |
| 1614. | Kaczer, B., Amoroso, S., Hussin, R., Asenov, A., Franco, J., Weckx, P., Roussel, Ph. J., Rzepa, G., Grasser, T., Horiguchi, N.: On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects Vortrag: IEEE International Integrated Reliability Workshop (IIRW), Stanford Sierra Conference Center, S. Lake Tahoe, California, USA; 09.10.2016 - 13.10.2016; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2016), ISBN: 978-1-5090-4192-3; 3 S. | |
| 1613. | Sadi, T., Towie, E., Nedjalkov, M., Riddet, C., Alexander, C., Wang, L., Georgiev, V., Brown, A., Millar, C., Asenov, A.: One-Dimensional Multi-Subband Monte Carlo Simulation of Charge Transport in Si Nanowire Transistors Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9; S. 23 - 26. https://doi.org/10.1109/SISPAD.2016.7605139 | |
| 1612. | Morhammer, A., Rupp, K., Rudolf, F., Weinbub, J.: Optimized Sparse Matrix-Matrix Multilication for Multi-Core CPUs, GPUs and MICs Vortrag: Austrian HPC Meeting (AHPC), Grundlsee, Austria; 22.02.2016 - 24.02.2016; in: "Book of Abstracts of the 2016 Austrian HPC Meeting (AHPC)", (2016), S. 23. | |
| 1611. | Rupp, K., Morhammer, A., Grasser, T., Jüngel, A.: Parallel Deterministic Solution of the Boltzmann Transport Equation for Semiconductors Vortrag: International Workshop on Finite Elements for Microwave Engineering, Florence, Italy; 16.05.2016 - 18.05.2016; in: "Proceedings of the 13th Workshop on Finite Elements for Microwave Engineering", Firenze University Press, (2016), ISBN: 978-88-6655-967-2; S. 104. | |
| 1610. | Dembski, F. (2016). Paris Post-Oil: Energy Conscious Urban Infill Development. In Vienna young Scientists Symposium, June 9-10, 2016 (pp. 58–59), Vienna, Austria. (reposiTUm) | |
| 1609. | Zhao, X., Kastlunger, G., Stadler, R. (2016). Quantum Interference Effects in Coherent Electron Transport Through Single Molecule Junctions With Branched Compounds Containing Ferrocene. In TU Wien - VSS Vienna Young Scientists Symposium (pp. 118–119), Wien, Austria. (reposiTUm) | |
| 1608. | Illarionov, Yu., Waltl, M., Furchi, M. M., Müller, T., Grasser, T.: Reliability of Single-Layer MoS2 Field-Effect Transistors with SiO2 and hBN Gate Insulators Vortrag: IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2016), S. 5A-1-1 - 5A-1-6. https://doi.org/10.1109/IRPS.2016.7574543 | |
| 1607. | Weinbub, J., Hössinger, A.: Shared-Memory Parallelization of the Fast Marching Method Using an Overlapping Domain-Decomposition Approach Vortrag: High Performance Computing Symposium (HPC), Pasadena, CA, USA; 03.04.2016 - 06.04.2016; in: "Proceedings of the High Performance Computing Symposium (HPC)", (2016), ISBN: 978-1-5108-2318-1; S. 18:1 - 18:8. https://doi.org/10.22360/SpringSim.2016.HPC.052 | |
| 1606. | Nedjalkov, M., Weinbub, J., Dimov, I., Selberherr, S.: Signed Particle Interpretation for Wigner-Quantum Electron Evolution Hauptvortrag: National Congress of Physical Sciences, Sofia, Bulgaria (eingeladen); 29.09.2016 - 02.10.2016; in: "Abstracts Third National Congress of Physical Sciences", (2016), S. 1. | |
| 1605. | Makarov, A., Sverdlov, V., Windbacher, T., Selberherr, S.: Silicon Spintronics Vortrag: International Conference on Electronic Materials (ICEM), Singapur (eingeladen); 04.07.2016 - 08.07.2016; in: "Proceedings of the ICEM 2016", (2016), 1 S. | |
| 1604. | Sverdlov, V., Windbacher, T., Makarov, A., Selberherr, S.: Silicon Spintronics Vortrag: Energy-Materials-Nanotechnology Meeting on Magnetic Materials (EMN), Kona, USA (eingeladen); 21.03.2016 - 24.03.2016; in: "Abstracts of the Energy-Materials-Nanotechnology Meeting on Magnetic Materials (EMN)", (2016), S. 37 - 38. | |
| 1603. | Wang, L., Sadi, T., Brown, A., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C., Asenov, A.: Simulation Analysis of the Electro-Thermal Performance of SOI FinFETs Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 25.01.2016 - 27.01.2016; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8; S. 34 - 35. | |
| 1602. | Sverdlov, V., Selberherr, S.: Spin-dependent Resonant Tunneling in Ferromagnet-Oxide-Silicon Structures Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Vienna, Austria; 25.01.2016 - 27.01.2016; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8; S. 116 - 117. | |
| 1601. | Ceric, H., Orio, R., Rovitto, M.: TCAD Approach for the Assessment of Interconnect Reliability Vortrag: International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP), Bad Schandau, Germany (eingeladen); 30.05.2016 - 01.06.2016; in: "Abstracts of the International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP)", (2016), S. T21. | |
| 1600. | Illarionov, Yu., Waltl, M., Kim, J., Akinwande, D., Grasser, T.: Temperature-dependent Hysteresis in Black Phosphorus FETs Poster: Graphene Week, Warsaw, Poland; 13.06.2016 - 17.06.2016; in: "Proceedings of the 2016 Graphene Week", (2016). | |
| 1599. | Grasser, T., Waltl, M., Rzepa, G., Gös, W., Wimmer, Y., El-Sayed, A.-M., Shluger, A., Reisinger, H., Kaczer, B.: The "Permanent" Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing Vortrag: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), S. 5A-2-1 - 5A-2-8. https://doi.org/10.1109/IRPS.2016.7574504 | |
| 1598. | Pont, U., Ghiassi, N., Taheri, M., Bräuer, R., Mahdavi, A. (2016). The BAU_WEB-Project: Exploring the Potential of State-Of-The-Art Web-Technologies for Building Product Data Acquisition and Management. In Proceedings of Vienna Young Scientists Symposium 2016 (pp. 28–29), Vienna, Austria. (reposiTUm) | |
| 1597. | Nedjalkov, M., Weinbub, J., Selberherr, S.: The Description of Carrier Transport for Quantum Systems Vortrag: Energy Materials Nanotechnology Meeting on Quantum, Phuket, Thailand (eingeladen); 08.04.2016 - 11.04.2016; in: "Book of Abstracts of the Energy Materials Nanotechnology Meeting on Quantum", (2016), S. 41 - 42. | |
| 1596. | Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S.: The Exploitation of Magnetization Orientation Encoded Spin-Transfer Torque for an Ultra Dense Non-Volatile Magnetic Shift Register Vortrag: European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland; 12.09.2016 - 16.09.2016; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2016), ISBN: 978-1-5090-2969-3; S. 311 - 314. https://doi.org/10.1109/ESSDERC.2016.7599648 | |
| 1595. | Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S.: Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9; S. 233 - 236. https://doi.org/10.1109/SISPAD.2016.7605190 | |
| 1594. | Sverdlov, V., Ghosh, J., Selberherr, S.: Universal Dependence of the Spin Lifetime in Silicon Films on the Spin Injection Direction Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 04.12.2016 - 09.12.2016; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", Society for Micro- and Nanoelectronics, (2016), ISBN: 978-3-901578-30-4; S. 7. | |
| 1593. | Ettlinger, A., Retscher, G. (2016). Use of Magnetic Fields in Combination With Wi-Fi and RFID for Indoor Positioning. In VIENNA young SCIENTISTS SYMPOSIUM 2016 (pp. 84–85), Wien, Austria. (reposiTUm) | |
| 1592. | Manstetten, P., Filipovic, L., Hössinger, A., Weinbub, J., Selberherr, S.: Using One-Dimensional Radiosity to Model Neutral Flux in Convex High Aspect Ratio Structures Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9; S. 265 - 268. https://doi.org/10.1109/SISPAD.2016.7605198 | |
| 1591. | Karner, M., Baumgartner, O., Stanojevic, Z., Schanovsky, F., Strof, G., Kernstock, Ch., Karner, H. W., Rzepa, G., Grasser, T.: Vertically Stacked Nanowire MOSFETs for Sub-10nm Nodes: Advanced Topography, Device, Variability, and Reliability Simulations Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 03.12.2016 - 07.12.2016; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2016), ISBN: 978-1-5090-3902-9; S. 30.7.1 - 30.7.4. https://doi.org/10.1109/IEDM.2016.7838516 | |
| 1590. | Ellinghaus, P., Nedjalkov, M., Weinbub, J., Selberherr, S.: Wigner Modelling of Quantum Wires Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 04.12.2016 - 09.12.2016; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", Society for Micro- and Nanoelectronics, (2016), ISBN: 978-3-901578-30-4; S. 2. | |
| 1589. | Wang, L., Brown, A., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C., Asenov, A.: 3D Electro-Thermal Simulations of Bulk FinFETs with Statistical Variations Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1; S. 112 - 115. https://doi.org/10.1109/SISPAD.2015.7292271 | |
| 1588. | Wimmer, Y., Gös, W., El-Sayed, A.-M., Shluger, A., Grasser, T.: A Density-Functional Study of Defect Volatility in Amorphous Silicon Dioxide Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4; S. 44 - 47. https://doi.org/10.1109/SISPAD.2015.7292254 | |
| 1587. | Sharma, P., Tyaginov, S. E., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J.M., Ceric, H., Grasser, T.: A Model for Hot-Carrier Degradation in nLDMOS Transistors Based on the Exact Solution of the Boltzmann Transport Equation Versus the Drift-Diffusion Scheme Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 26.01.2015 - 28.01.2015; in: "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE, (2015), S. 21 - 24. https://doi.org/10.1109/ULIS.2015.7063763 | |
| 1586. | Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S.: A Novel Method of SOT-MRAM Switching Vortrag: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 29.11.2015 - 04.12.2015; in: "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2015). | |
| 1585. | Kefayati, A., Pourfath, M., Kosina, H.: A Rigorous Study of Nanoscaled Transistors Based on Single-Layer MoS2 Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0; S. 7 - 8. | |
| 1584. | Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S.: A Universal Nonvolatile Processing Environment Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 21.06.2015 - 26.06.2015; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), S. 62. | |
| 1583. | Grasser, T. (2015). Advanced Modeling and Characterization of Bias Temperature Instabilities and Hot Carrier Degradation. D2T Symposium, Tokyo, Japan, Non-EU. (reposiTUm) | |
| 1582. | Wang, L., Sadi, T., Nedjalkov, M., Brown, A., Alexander, C., Cheng, B., Millar, C., Asenov, A.: An Advanced Electro-Thermal Simulation Methodology For Nanoscale Device in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", IEEE, 2015, ISBN: 978-0-692-51523-5. https://doi.org/10.1109/IWCE.2015.7301989 | |
| 1581. | Wang, L., Sadi, T., Nedjalkov, M., Brown, A., Alexander, C., Cheng, B., Millar, C., Asenov, A.: An Advanced Electro-Thermal Simulation Methodology For Nanoscale Device Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0; S. 155 - 156. | |
| 1580. | Rovitto, M., Zisser, W. H., Ceric, H.: Analysis of Electromigration Void Nucleation Failure Time in Open Copper TSVs Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu, Taiwan; 29.06.2015 - 02.07.2015; in: "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2015). | |
| 1579. | Illarionov, Yu., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T.: Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors Vortrag: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 27.09.2015 - 30.09.2015; in: "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3; S. 650 - 651. | |
| 1578. | Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S.: CMOS-Compatible Spintronic Devices Vortrag: International Symposium on Microelectronics Technology and Devices (SBMicro), Salvador, Brazil (eingeladen); 01.09.2015 - 04.09.2015; in: "Proceedings of the 30th Symposium on Microelectronics Technology and Devices (SBMicro)", (2015), ISBN: 978-1-4673-7162-9; 4 S. https://doi.org/10.1109/SBMicro.2015.7298103 | |
| 1577. | Neophytou, N., Thesberg, M., Pourfath, M., Kosina, H.: Calculations of the Thermopower in Materials with Nano-Inclusions Using Quantum Mechanical Simulations Vortrag: APS March Meeting, San Antonio, USA; 02.03.2015 - 06.03.2015; in: "Bulletin of the American Physical Society (APS March Meeting)", 60/1 (2015). | |
| 1576. | Rzepa, G., Gös, W., Kaczer, B., Grasser, T.: Characterization and Modeling of Reliability Issues in Nanoscale Devices Vortrag: IEEE International Symposium on Circuits and Systems (ISCAS), Lisbon, Portugal (eingeladen); 24.05.2015 - 27.05.2015; in: "Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS) 2015", (2015), ISBN: 978-1-4799-8391-9; S. 2445 - 2448. | |
| 1575. | Illarionov, Yu., Vexler, M., Fedorov, V. V., Suturin, S. M., Sokolov, N. S., Grasser, T.: Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-Thin Barrier Layers in Silicon Microelectronics Poster: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 27.09.2015 - 30.09.2015; in: "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3; S. 330 - 331. | |
| 1574. | Ullmann, B., Waltl, M., Grasser, T.: Characterization of the Permanent Component of MOSFET Degradation Mechanisms Vortrag: Vienna Young Scientists Symposium - VSS 2015, Vienna University of Technology; 25.06.2015 - 26.06.2015; in: "Proceedings of the 2015 Vienna Young Scient Symposium", (2015), ISBN: 978-3-9504017-0-7; S. 36 - 37. | |
| 1573. | Grill, A., Rzepa, G., Lagger, P., Ostermaier, C., Ceric, H., Grasser, T.: Charge Feedback Mechanisms at Forward Threshold Voltage Stress in GaN/AlGaN HEMTs Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 11.10.2015 - 15.10.2015; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2015), ISBN: 978-1-4673-7395-1; S. 41 - 45. https://doi.org/10.1109/IIRW.2015.7437064 | |
| 1572. | Ceric, H., Selberherr, S.: Compact Model for Solder Bump Electromigration Failure Poster: International Interconnect Technology and Materials for Advanced Metallization Conference (IITC/MAM), Grenoble, France; 18.05.2015 - 21.05.2015; in: "Proceedings of the International Interconnect Technology and Materials for Advanced Metallization Conference (IITC/MAM)", (2015), ISBN: 978-1-4673-7355-5; S. 159 - 161. https://doi.org/10.1109/IITC-MAM.2015.7325651 | |
| 1571. | Sharma, P., Tyaginov, S. E., Wimmer, Y., Rudolf, F., Rupp, K., Enichlmair, H., Park, J.M., Ceric, H., Grasser, T.: Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 05.10.2015 - 09.10.2015; in: "Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2015), S. 60. | |
| 1570. | Weinbub, J., Ellinghaus, P., Nedjalkov, M., Selberherr, S.: Comparison of Slab and Block Decomposition Strategies for the Two-Dimensional Wigner Monte Carlo Method Vortrag: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 29.11.2015 - 04.12.2015; in: "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2015). | |
| 1569. | Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S.: Concept of a SOT-MRAM based on 1Transistor-1MTJ-Cell Structure Poster: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 27.09.2015 - 30.09.2015; in: "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2015), ISBN: 978-4-86348-514-3; S. 140 - 141. | |
| 1568. | Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S.: Dependence of Spin Lifetime on Spin Injection Orientation in Strained Silicon Films Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 26.01.2015 - 28.01.2015; in: "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE, (2015), ISBN: 978-1-4799-6910-4; S. 285 - 288. https://doi.org/10.1109/ULIS.2015.7063829 | |
| 1567. | Papaleo, S., Zisser, W. H., Ceric, H.: Effects of the Initial Stress at the Bottom of Open TSVs Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu, Taiwan; 29.06.2015 - 02.07.2015; in: "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2015). | |
| 1566. | Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S.: Efficient High-Frequency Spin-Torque Oscillators Composed of Two Three-Layer MgO-MTJs with a Common Free Layer Vortrag: Iberchip Workshop (IWS), Montevideo, Uruguay (eingeladen); 24.02.2015 - 27.02.2015; in: "Proceedings of 21st Iberchip Worshop", 23 (2015). | |
| 1565. | Baumgartner, O., Filipovic, L., Kosina, H., Karner, M., Stanojevic, Z., Cheng-Karner, H. W.: Efficient Modeling of Source/Drain Tunneling in Ultra-Scaled Transistors Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8; S. 202 - 205. https://doi.org/10.1109/SISPAD.2015.7292294 | |
| 1564. | Selinger, A., Ojdanic, D., Rupp, K., Langer, E.: Eigenvalue Computations on Graphics Processing Units Vortrag: Vienna Young Scientists Symposium - VSS 2015, Vienna University of Technology; 25.06.2015 - 26.06.2015; in: "Proceedings of the 2015 Vienna Young Scientist Symposium", Book-of-Abstracts.com, Heinz A. Krebs, Gumpoldskirchen, Austria (2015), ISBN: 978-3-9504017-0-7; S. 40 - 41. | |
| 1563. | Rovitto, M., Zisser, W. H., Ceric, H., Grasser, T.: Electromigration Modelling of Void Nucleation in Open Cu-TSVs Poster: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Budapest, Hungary; 19.04.2015 - 22.04.2015; in: "Proceedings of the International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)", IEEE Xplore, (2015), ISBN: 978-1-4799-9949-1; 5 S. https://doi.org/10.1109/EuroSimE.2015.7103100 | |
| 1562. | Sverdlov, V., Ghosh, J., Osintsev, D., Selberherr, S.: Electron Spin Lifetime Enhancement by Shear Strain in Thin Silicon Films Vortrag: CMOS Emerging Technologies Research (CMOSETR), Vancouver, BC, Canada (eingeladen); 20.05.2015 - 22.05.2015; in: "Book of Abstracts of the 2015 CMOS Emerging Technologies Research Symposium (CMOSETR)", Google Books, (2015), ISBN: 978-1-927500-70-5; S. 58. | |
| 1561. | Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S.: Evaluation of Spin Lifetime in Thin Silicon Films by Multilevel Parallelization Poster: nanoHUB User Conference, West Lafayette, Indiana, USA; 31.08.2015 - 01.09.2015; in: "Proceedings of the nanoHUB User Conference", (2015), S. 1. | |
| 1560. | Demel, H., Stanojevic, Z., Karner, M., Rzepa, G., Grasser, T.: Expanding TCAD Simulations from Grid to Cloud Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4; S. 186 - 189. https://doi.org/10.1109/SISPAD.2015.7292290 | |
| 1559. | Gerrer, L., Hussin, R., Amoroso, S., Franco, J., Weckx, P., Simicic, N., Horiguchi, N., Kaczer, B., Grasser, T., Asenov, A.: Experimental Evidences and Simulations of Trap Generation along a Percolation Path Vortrag: European Solid-State Device Research Conference (ESSDERC), Graz; 14.09.2015 - 18.09.2015; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7133-9; S. 226 - 229. https://doi.org/10.1109/ESSDERC.2015.7324755 | |
| 1558. | Papaleo, S., Zisser, W. H., Ceric, H.: Factors that Influence Delamination at the Bottom of Open TSVs Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1; S. 421 - 424. https://doi.org/10.1109/SISPAD.2015.7292350 | |
| 1557. | Grasser, T., Waltl, M., Wimmer, Y., Gös, W., Kosik, R., Rzepa, G., Reisinger, H., Pobegen, G., El-Sayed, A.-M., Shluger, A., Kaczer, B.: Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 07.12.2015 - 09.12.2015; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2015), S. 535 - 538. https://doi.org/10.1109/IEDM.2015.7409739 | |
| 1556. | Roger, F., Singulani, A. P., Carniello, S., Filipovic, L., Selberherr, S.: Global Statistical Methodology for the Analysis of Equipment Parameter Effects on TSV Formation Vortrag: International Workshop on CMOS Variability (VARI), Salvador, Brazil; 01.09.2015 - 04.09.2015; in: "Proceedings of the 6th International Workshop on CMOS Variability (VARI)", (2015), ISBN: 978-1-5090-0071-5; S. 39 - 44. https://doi.org/10.1109/VARI.2015.7456561 | |
| 1555. | Karner, M., Stanojevic, Z., Kernstock, Ch., Baumgartner, O., Cheng-Karner, H. W.: Hierarchical TCAD Device Simulation of FinFETs Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8; S. 258 - 261. https://doi.org/10.1109/SISPAD.2015.7292308 | |
| 1554. | Illarionov, Yu., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Müller, T., Lemme, M., Grasser, T.: Hot-Carrier Degradation in Single-Layer Double-Gated Graphene Field-Effect Transistors Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 19.04.2015 - 23.04.2015; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", IEEE, (2015), S. XT.2.1 - XT.2.6. https://doi.org/10.1109/IRPS.2015.7112834 | |
| 1553. | Illarionov, Yu., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T.: Impact of Hot Carrier Stress on the Defect Density and Mobility in Double-Gated Graphene Field-Effect Transistors Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 26.01.2015 - 28.01.2015; in: "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", Ieee Xplore, (2015), ISBN: 978-1-4799-6910-4; S. 81 - 84. https://doi.org/10.1109/ULIS.2015.7063778 | |
| 1552. | Ceric, H., Rovitto, M.: Impact of Microstructure and Current Crowding on Electromigration: A TCAD Study Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1; S. 194 - 197. https://doi.org/10.1109/SISPAD.2015.7292292 | |
| 1551. | Ellinghaus, P., Nedjalkov, M., Selberherr, S.: Improved Drive-Current into Nanoscaled Channels using Electrostatic Lenses Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4; S. 24 - 27. https://doi.org/10.1109/SISPAD.2015.7292249 | |
| 1550. | Ellinghaus, P., Nedjalkov, M., Selberherr, S.: Improved Particle Annihilation for Wigner Monte Carlo Simulations on a High-Resolution Mesh Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0; S. 93 - 94. | |
| 1549. | Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S.: Improving the Performance of a Non-Volatile Magnetic Flip Flop by Exploiting the Spin Hall Effect Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1; S. 446 - 449. https://doi.org/10.1109/SISPAD.2015.7292357 | |
| 1548. | Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S.: Increase of Surface Roughness and Phonon Scattering Mediated Spin Lifetime in Thin Strained SOI Film Vortrag: European Materials Research Society (EMRS), Warsaw, Poland; 15.09.2015 - 18.09.2015; in: "Book of Abstracts of the 2015 E-MRS Fall Meeting", (2015), 1 S. | |
| 1547. | Ghosh, J., Sverdlov, V., Selberherr, S.: Increment of Spin Lifetime by Spin Injection Orientation in Stressed Thin SOI Films Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Basel, Switzerland; 10.08.2015 - 13.08.2015; in: "Program and Abstract Book of the 8th International School & Conference on Spintronics and Quantum Information Technology", (2015), S. 130. | |
| 1546. | Ghosh, J., Sverdlov, V., Selberherr, S.: Influence of Valley Splitting on Spin Relaxation Time in a Strained Thin Silicon Film Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-51523-5; 4 S. https://doi.org/10.1109/IWCE.2015.7301961 | |
| 1545. | Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S.: Injection Direction Sensitive Spin Lifetime Model in a Strained Thin Silicon Film Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1; S. 277 - 280. https://doi.org/10.1109/SISPAD.2015.7292313 | |
| 1544. | Illarionov, Yu., Waltl, M., Smith, S., Vaziri, S., Ostling, M., Lemme, M., Grasser, T.: Interplay between Hot Carrier and Bias Stress Components in Single-Layer Double-Gated Graphene Field-Effect Transistors Vortrag: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; 14.09.2015 - 18.09.2015; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7133-9; S. 172 - 175. https://doi.org/10.1109/ESSDERC.2015.7324741 | |
| 1543. | Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S.: Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures Vortrag: International Conference on Insulating Films on Semiconductors (INFOS), Udine, Italy; 29.06.2015 - 02.07.2015; in: "Book of Abstracts 19th Conference on Insulating Films on Semiconductors", (2015), ISBN: 978-88-9030-695-2; S. 235 - 236. | |
| 1542. | Filipovic, L., Singulani, A. P., Roger, F., Carniello, S., Selberherr, S.: Intrinsic Stress Analysis of Tungsten-Lined Open TSVs Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 05.10.2015 - 09.10.2015; in: "Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2015), S. 71. | |
| 1541. | Filipovic, L., Selberherr, S.: Kinetics of Droplet Motion During Spray Pyrolysis Vortrag: Energy-Materials-Nanotechnology Meeting on Droplets (EMN), Phuket, Thailand (eingeladen); 08.05.2015 - 11.05.2015; in: "Abstracts of the Energy-Materials-Nanotechnology Meeting on Droplets (EMN)", (2015), S. 127 - 128. | |
| 1540. | Kernstock, Ch., Stanojevic, Z., Baumgartner, O., Karner, M.: Layout-Based TCAD Device Model Generation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8; S. 198 - 201. https://doi.org/10.1109/SISPAD.2015.7292293 | |
| 1539. | Ellinghaus, P., Nedjalkov, M., Selberherr, S.: Memory-efficient Particle Annihilation Algorithm for Wigner Monte Carlo Simulations Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-51523-5; 4 S. https://doi.org/10.1109/IWCE.2015.7301955 | |
| 1538. | Rudolf, F., Weinbub, J., Rupp, K., Resutik, P., Selberherr, S.: Mesh Healing for TCAD Simulations Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 66. | |
| 1537. | Rzepa, G., Waltl, M., Gös, W., Kaczer, B., Grasser, T.: Microscopic Oxide Defects Causing BTI, RTN, and SILC on High-K FinFETs Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4; S. 144 - 147. https://doi.org/10.1109/SISPAD.2015.7292279 | |
| 1536. | Sharma, P., Jech, M., Tyaginov, S. E., Rudolf, F., Rupp, K., Enichlmair, H., Park, J.M., Grasser, T.: Modeling of Hot-Carrier Degradation in LDMOS Devices Using a Drift-Diffusion Based Approach Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1; S. 60 - 63. https://doi.org/10.1109/SISPAD.2015.7292258 | |
| 1535. | Franco, J., Kaczer, B., Roussel, P., Bury, E., Mertens, H., Ritzenthaler, R., Grasser, T., Horiguchi, N., Thean, A., Groeseneken, G.: NBTI in Si 0.55 Ge 0.45 Cladding p-FinFETs: Porting the Superior Reliability from Planar to 3D Architectures Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 19.04.2015 - 23.04.2015; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", IEEE, (2015), S. 2F.4.1 - 2F.4.5. https://doi.org/10.1109/IRPS.2015.7112694 | |
| 1534. | Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S.: Novel Buffered Magnetic Logic Gate Grid Poster: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 24.05.2015 - 28.05.2015; in: "Proceedings of the 227th ECS Meeting (ECS)", ECS Transactions, 67 (2015), ISSN: 1938-6737; 2 S. | |
| 1533. | Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S.: Novel Spintronic Devices for Embedded Spin-Based Memories and Non-Volatile Computing Vortrag: Energy-Materials-Nanotechnology Fall Meeting (EMN), Las Vegas, USA (eingeladen); 16.11.2015 - 19.11.2015; in: "Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN)", (2015), S. 15 - 16. | |
| 1532. | Rupp, K., Balay, S., Brown, J., Knepley, M., McInnes, L., Smith, B.: On The Evolution Of User Support Topics in Computational Science and Engineering Software Poster: Computational Science & Engineering Software Sustainability and Productivity Challenges (CSESSP Challenges), Rockville, MD, USA; 15.10.2015 - 16.10.2015; in: "Computational Science and Engineering Software Sustainability and Productivity Challenges (CSESSP) Workshop", (2015), S. 1 - 2. | |
| 1531. | Stradiotto, R., Pobegen, G., Ostermaier, C., Grasser, T.: On The Fly Characterization of Charge Trapping Phenomena at GaN/Dielectric and GaN/AlGaN/Dielectric Interfaces Using Impedance Measurements Vortrag: European Solid-State Device Research Conference (ESSDERC), Graz; 14.09.2015 - 18.09.2015; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7860-4; S. 218 - 225. https://doi.org/10.1109/ESSDERC.2015.7324754 | |
| 1530. | Tyaginov, S. E., Jech, M., Sharma, P., Franco, J., Kaczer, B., Grasser, T.: On the Temperature Behavior of Hot-Carrier Degradation Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 11.10.2015 - 15.10.2015; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2015), S. 143 - 146. https://doi.org/10.1109/IIRW.2015.7437088 | |
| 1529. | Wimmer, Y., Gös, W., El-Sayed, A.-M., Shluger, A., Grasser, T.: On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0; S. 97 - 98. | |
| 1528. | Grasser, T., Waltl, M., Gös, W., Wimmer, Y., El-Sayed, A., Shluger, A., Kaczer, B.: On the Volatility of Oxide Defects: Activation, Deactivation, and Transformation Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 19.04.2015 - 23.04.2015; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", IEEE, (2015), S. 5A.3.1 - 5A.3.8. https://doi.org/10.1109/IRPS.2015.7112739 | |
| 1527. | Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H.: Optimization of Energy Filtering for Power Factor Improvements Through Fully Quantum Mechanical Transport Simulations Vortrag: International Conference on Thermoelectrics & European Conference on Thermoelectrics (ICT&ECT), Dresden, Germany; 28.06.2015 - 02.07.2015; in: "Proceedings of the 34th Annual International Conference on Thermoelectrics and the 13th European Conference on Thermoelectrics (ICT&ECT)", (2015), 1 S. | |
| 1526. | Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H.: Optimization of Thermoelectric Properties in Cross-Plane Superlattices - A 1D NEGF Study Vortrag: APS March Meeting, San Antonio, USA; 02.03.2015 - 06.03.2015; in: "Bulletin of the American Physical Society (APS March Meeting)", 60/1 (2015). | |
| 1525. | Kaczer, B., Franco, J., Cho, M., Grasser, T., Roussel, P., Tyaginov, S. E., Bina, M., Wimmer, Y., Procel, L. M., Trojman, L., Crupi, F., Pitner, G., Putcha, V., Weckx, P., Bury, E., Ji, Z., De Keersgieter, A., Chiarella, T., Horiguchi, N., Groeseneken, G., Thean, A.: Origins and Implications of Increased Channel Hot Carrier Variability in nFinFETs Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 19.04.2015 - 23.04.2015; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), 6 S. https://doi.org/10.1109/IRPS.2015.7112706 | |
| 1524. | Grasser, T. (2015). Oxide Defects in MOS Transistors: Characterization and Modeling. IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm) | |
| 1523. | Weinbub, J., Ellinghaus, P., Selberherr, S.: Parallelization of the Two-Dimensional Wigner Monte Carlo Method Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 73. | |
| 1522. | Cervenka, J., Ellinghaus, P.: Preconditioned Deterministic Solver for the Wigner Equation Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 31. | |
| 1521. | Sharma, P., Tyaginov, S. E., Wimmer, Y., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J.M., Ceric, H., Grasser, T.: Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices Vortrag: IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China; 10.05.2015 - 14.05.2015; in: "Proceedings of the IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)", (2015), ISBN: 978-1-4799-6259-4; S. 389 - 392. https://doi.org/10.1109/ISPSD.2015.7123471 | |
| 1520. | Filipovic, L., Selberherr, S.: Processing of Integrated Gas Sensor Devices Vortrag: IEEE International Technical Conference of IEEE Region 10 (TENCON), Macau, China (eingeladen); 01.11.2015 - 04.11.2015; in: "Proceedings of the IEEE International Technical Conference of IEEE Region 10 (TENCON)", (2015), ISBN: 978-1-4799-8639-2; 6 S. https://doi.org/10.1109/TENCON.2015.7372781 | |
| 1519. | Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S.: SOT-MRAM based on 1Transistor-1MTJ-Cell Structure in: "Proceedings of the Non-Volatile Memory Technology Symposium (NVMTS)", IEEE, 2015, S. 50 - 53. https://doi.org/10.1109/NVMTS.2015.7457479 | |
| 1518. | Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S.: SOT-MRAM based on 1Transistor-1MTJ-Cell Structure Poster: Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China; 12.10.2015 - 14.10.2015; in: "Technical Digest of the Non-Volatile Memory Technology Symposium (NVMTS)", (2015), S. 105 - 106. | |
| 1517. | Rupp, K.: Scaling Deterministic Solution of the Boltzmann Transport Equation on Heterogeneous Computing Platforms Vortrag: Scalable Methods for Kinetic Equations, Oak Ridge, TN, USA (eingeladen); 19.10.2015 - 23.10.2015; in: "Scalable Methods for Kinetic Equations - Presentation Titles and Abstracts", (2015), S. 17. | |
| 1516. | Weinbub, J., Dang, F., Gillberg, T., Selberherr, S.: Shared-Memory Parallelization of the Semi-Ordered Fast Iterative Method in: "Proceedings of the High Performance Computing Symposium (HPC)", ACM, 2015, ISBN: 978-1-5108-0101-1, S. 217 - 224. https://doi.org/10.5555/2872599.2872626 | |
| 1515. | Weinbub, J., Dang, F., Gillberg, T., Selberherr, S.: Shared-Memory Parallelization of the Semi-Ordered Fast Iterative Method Vortrag: High Performance Computing Symposium (HPC), Alexandria, VA, USA; 12.04.2015 - 15.04.2015; in: "Book of Abstracts of the Spring Simulation Multiconference (SpringSim), High Performance Computing Symposium (HPC)", (2015), ISBN: 1-56555-355-1; S. 74. | |
| 1514. | Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S.: Silicon Spintronics Hauptvortrag: NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting", Lviv, Ukrain (eingeladen); 13.04.2015 - 16.04.2015; in: "Conference Abstracts, NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting"", (2015), ISBN: 978-966-02-7553-9; S. 44 - 45. | |
| 1513. | Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S.: Silicon Spintronics: Recent Advances and Challenges Hauptvortrag: International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT), Samara, Russia (eingeladen); 29.06.2015 - 30.06.2015; in: "Proceedings of the 2015 International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT)", (2015), ISBN: 978-5-93424-739-4; S. 6 - 7. | |
| 1512. | Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S.: Silicon and CMOS-Compatible Spintronics Vortrag: International Conference on Applied Physics, Simulation and Computers (APSAC), Vienna, Austria (eingeladen); 15.03.2015 - 17.03.2015; in: "Proceedings of the International Conference on Applied Physics, Simulation and Computers (APSAC 2015)", Recent advances in Computer Engineering, 28 (2015), ISBN: 978-1-61804-286-6; S. 17 - 20. | |
| 1511. | Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S.: Spin Lifetime Dependence on Spin Injection Orientation in Strained Silicon Films Vortrag: APS March Meeting, San Antonio, USA; 02.03.2015 - 06.03.2015; in: "Bulletin of the American Physical Society (APS March Meeting)", 60/1 (2015). | |
| 1510. | Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S.: Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0; S. 35 - 36. | |
| 1509. | Osintsev, D., Ghosh, J., Sverdlov, V., Weinbub, J., Selberherr, S.: Spin Lifetime in MOSFETs: A High Performance Computing Approach Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 60 - 61. | |
| 1508. | Sverdlov, V., Selberherr, S.: Spin-Based CMOS-Compatible Devices Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria (eingeladen); 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 69. | |
| 1507. | Sverdlov, V., Selberherr, S.: Spin-Based Devices for Future Microelectronics Vortrag: International Symposium on Next-Generation Electronics (ISNE), Taipei, Taiwan (eingeladen); 04.05.2015 - 06.05.2015; in: "Proceedings of The 4th International Symposium on Next-Generation Electronics (ISNE 2015)", (2015), 4 S. https://doi.org/10.1109/ISNE.2015.7132030 | |
| 1506. | Sverdlov, V., Selberherr, S.: Spin-Based Silicon and CMOS-Compatible Devices Vortrag: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA (eingeladen); 24.05.2015 - 28.05.2015; in: "Proceedings of the 227th ECS Meeting (ECS)", ECS Transactions, 67 (2015), ISSN: 1938-6737; 2 S. | |
| 1505. | Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S.: Spin-Driven Applications of Silicon and CMOS-Compatible Devices Vortrag: BIT's Annual World Congress of Nano Science & Technology, Xi'an, China (eingeladen); 24.09.2015 - 26.09.2015; in: "Abstracts of the BIT's 5th Annual Congress of Nano Science & Technology-2015", (2015), S. 175. | |
| 1504. | Sverdlov, V., Selberherr, S.: Spin-dependent Trap-assisted Tunneling Including Spin Relaxation at Room Temperature Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Basel, Switzerland; 10.08.2015 - 13.08.2015; in: "Program and Abstract Book of the 8th International School & Conference on Spintronics and Quantum Information Technology", (2015), S. 114. | |
| 1503. | Sverdlov, V., Selberherr, S.: Spin-dependent Trap-assisted Tunneling in Ferromagnet-Oxide-Semiconductor Structures Vortrag: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 29.11.2015 - 04.12.2015; in: "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2015). | |
| 1502. | Hosseini, M., Elahi, M., Pourfath, M., Esseni, D.: Strain Engineering of Single-Layer MoS2 Vortrag: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; 14.09.2015 - 18.09.2015; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7133-9; S. 314 - 317. https://doi.org/10.1109/ESSDERC.2015.7324777 | |
| 1501. | Sverdlov, V., Osintsev, D., Ghosh, J., Selberherr, S.: Strained Silicon-on-Insulator for Spintronic Applications: Giant Spin Lifetime Enhancement Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 21.06.2015 - 26.06.2015; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), S. 63. | |
| 1500. | Filipovic, L., Selberherr, S.: Stress Considerations in Thin Films for CMOS-Integrated Gas Sensors Vortrag: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 24.05.2015 - 28.05.2015; in: "Proceedings of the 227th ECS Meeting (ECS)", ECS Transactions, 67 (2015), ISSN: 1938-6737; 2 S. | |
| 1499. | Filipovic, L., Selberherr, S.: Stress in Three-Dimensionally Integrated Sensor Systems Vortrag: International Conference on Materials for Advanced Technologies(ICMAT), Singapore (eingeladen); 28.06.2015 - 03.07.2015; in: "Abstracts of the 2015 International Conference on Materials for Advanced Technologies (ICMAT)", (2015), S. 342. | |
| 1498. | Rudolf, F., Weinbub, J., Rupp, K., Morhammer, A., Selberherr, S.: Symmetry-Aware 3D Volumetric Mesh Generation - An Analysis of Performance and Element Quality Vortrag: International Meshing Roundtable (IMR), Austin, Texas, USA; 11.10.2015 - 14.10.2015; in: "Proceedings of the 24th International Meshing Roundtable (IMR24)", (2015), 5 S. | |
| 1497. | Illarionov, Yu., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T.: Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect Transistors Vortrag: Graphene 2015, Bilbao, Spain; 10.03.2015 - 13.03.2015; in: "Abstracts Graphene 2015", (2015), 1 S. | |
| 1496. | Nedjalkov, M., Ellinghaus, P., Selberherr, S.: The Aharanov-Bohm Effect from a Phase Space Perspective Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 59 - 60. | |
| 1495. | Kaczer, B., Franco, J., Weckx, P., Roussel, P., Bury, E., Cho, M., Degraeve, R., Linten, D., Groeseneken, G., Kukner, H., Raghavan, P., Catthoor, F., Rzepa, G., Gös, W., Grasser, T.: The Defect-Centric Perspective of Device and Circuit Reliability - From Individual Defects to Circuits Vortrag: European Solid-State Device Research Conference (ESSDERC), Graz, Austria (eingeladen); 14.09.2015 - 18.09.2015; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7860-4; S. 218 - 225. https://doi.org/10.1109/ESSDERC.2015.7324754 | |
| 1494. | Selberherr, S. (2015). The Evolution and Potential Future of Microelectronics. IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm) | |
| 1493. | Selberherr, S. (2015). The Evolution and Potential Future of Microelectronics. IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm) | |
| 1492. | Ellinghaus, P., Nedjalkov, M., Selberherr, S.: The Influence of Electrostatic Lenses on Wave Packet Dynamics Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 39 - 40. | |
| 1491. | Nazemi, S., Soleimani, E., Pourfath, M., Kosina, H.: The Role of Surface Termination Geometry on the Ground-State and Optical Properties of Silicon Nano-Crystals: A Density Functional Theory Study Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8; S. 333 - 336. | |
| 1490. | Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H.: Thermoelectric Efficiency Improvements through Grain Shape Optimization: A Non-Equilibrium Green´s Function Study Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 70. | |
| 1489. | Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H.: Thermoelectric Power Factor Optimization in Nanocomposites by Energy Filtering Using NEGF Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0; 4 S. | |
| 1488. | Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S.: Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films Vortrag: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 24.05.2015 - 28.05.2015; in: "Proceedings of the 227th ECS Meeting (ECS)", ECS Transactions, 67 (2015), ISSN: 1938-6737; 2 S. | |
| 1487. | Rupp, K., Tillet, Ph., St Clere Smithe, T., Karovic, N., Weinbub, J., Rudolf, F.: "ViennaCL - Fast Linear Algebra for Multi and Many-Core Architectures"; Poster: SIAM Conference on Computational Science and Engineering, Salt Lake City, Utah, USA; 14.03.2015 - 18.03.2015. | |
| 1486. | Ellinghaus, P., Weinbub, J., Nedjalkov, M., Selberherr, S.: ViennaWD - Applications Vortrag: International Wigner Workshop (IW2), Waikoloa, Hawaii, USA; 29.11.2015; in: "Booklet of the International Wigner Workshop (IW2)", (2015), S. 9. | |
| 1485. | Weinbub, J., Ellinghaus, P., Nedjalkov, M., Selberherr, S.: ViennaWD - Status and Outlook Vortrag: International Wigner Workshop (IW2), Waikoloa, Hawaii, USA; 29.11.2015; in: "Booklet of the International Wigner Workshop (IW2)", (2015), S. 8. | |
| 1484. | Wang, L., Brown, A., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C., Asenov, A.: 3D Coupled Electro-Thermal FinFET Simulations Including the Fin Shape Dependence of the Thermal Conductivity Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 269 - 272. https://doi.org/10.1109/SISPAD.2014.6931615 | |
| 1483. | Filipovic, L., Stanojevic, Z., Baumgartner, O., Kosina, H.: 3D Modeling of Direct Band-to-Band Tunneling in Nanowire TFETs Vortrag: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in: "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), S. 1 - 2. | |
| 1482. | Ceric, H., Orio, R., Singulani, A. P., Selberherr, S.: 3D Technology Interconnect Reliability TCAD Vortrag: Pan Pacific Microelectronics Symposium, Big Island of Hawaii, USA; 11.02.2014 - 13.02.2014; in: "Proceedings of the 2014 Pan Pacific Microelectronics Symposium", (2014), ISBN: 978-0-9888873-3-6; S. 1 - 8. | |
| 1481. | Weinbub, J., Rupp, K., Rudolf, F.: A Flexible Material Database for Computational Science and Engineering Vortrag: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 15.06.2014 - 20.06.2014; in: "Proc. 4th European Seminar on Computing", (2014), S. 226. | |
| 1480. | Moradinasab, M., Pourfath, M., Fathipour, M., Kosina, H.: A Numerical Study of Line-Edge Roughness in Graphene Superlattice-Based Photodetectors Vortrag: International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Palma de Mallorca, Spain; 01.09.2014 - 04.09.2014; in: "Proceedings of the 14th International Conference on Numerical Simulation of Optoelectronic Devices", (2014), S. 1 - 2. | |
| 1479. | Tyaginov, S. E., Bina, M., Franco, J., Wimmer, Y., Osintsev, D., Kaczer, B., Grasser, T.: A Predictive Physical Model for Hot-Carrier Degradation in Ultra-Scaled MOSFETs Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 89 - 92. https://doi.org/10.1109/SISPAD.2014.6931570 | |
| 1478. | Illarionov, Yu., Bina, M., Tyaginov, S. E., Rott, K., Reisinger, H., Kaczer, B., Grasser, T.: A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-scaled MOSFETs Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; S. XT13.1 - XT13.6. | |
| 1477. | Waltl, M., Gös, W., Rott, K., Reisinger, H., Grasser, T.: A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS Case Vortrag: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; S. XT18.1 - XT18.5. | |
| 1476. | Grasser, T., Rott, K., Reisinger, H., Waltl, M., Franco, J., Kaczer, B.: A unified perspective of RTN and BTI Vortrag: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; S. 4A.5.1 - 4A.5.7. | |
| 1475. | Filipovic, L., Selberherr, S.: About Processes and Performance of Integrated Gas Sensor Components Vortrag: Energy-Materials-Nanotechnology Fall Meeting (EMN), Orlando, USA (eingeladen); 22.11.2014 - 25.11.2014; in: "Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN)", (2014), S. 96 - 97. | |
| 1474. | Rupp, K., Tillet, Ph., Jungel, A., Grasser, T.: Achieving Portable High Performance for Iterative Solvers on Accelerators Vortrag: Annual Meeting of the International Association of Applied Mathematics and Mechanics (GAMM), Erlangen, Germany; 10.03.2014 - 14.03.2014; in: "Book of Abstracts", (2014), S. 815. | |
| 1473. | Gös, W., Waltl, M., Wimmer, Y., Rzepa, G., Grasser, T.: Advanced Modeling of Charge Trapping: RTN, 1/f noise, SILC, and BTI Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan (eingeladen); 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 77 - 80. https://doi.org/10.1109/SISPAD.2014.6931567 | |
| 1472. | Stanojevic, Z., Baumgartner, O., Karner, M., Filipovic, L., Kernstock, C., Kosina, H.: Advanced Numerical Methods for Semi-Classical Transport Simulation in Ultra-Narrow Channels Vortrag: European Conference on Mathematics for Industry (ECMI), Taormina, Italy (eingeladen); 09.06.2014 - 14.06.2014; in: "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), S. 1. | |
| 1471. | Moradinasab, M., Pourfath, M., Kosina, H.: An Instability Study in Terahertz Quantum Cascade Lasers Vortrag: Int. Conf. on Superlattices, Nanostructures and Nanodevices (ICSNN), Savannah, GA, USA; 03.08.2014 - 08.08.2014; in: "Proc.Intl.Conf.on Superlattices, Nanostructures and Nanodevices (ICSNN)", (2014), S. 10. | |
| 1470. | Rupp, K., Rudolf, F., Weinbub, J., Jungel, A., Grasser, T.: Automatic Finite Volume Discretizations Through Symbolic Computations Vortrag: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 15.06.2014 - 20.06.2014; in: "Proc. 4th European Seminar on Computing", (2014), S. 192. | |
| 1469. | Filipovic, L., Baumgartner, O., Stanojevic, Z., Kosina, H.: BTB Tunneling in InAs/Si Heterojunctions Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 245 - 248. https://doi.org/10.1109/SISPAD.2014.6931609 | |
| 1468. | Filipovic, L., Baumgartner, O., Stanojevic, Z., Kosina, H.: Band-to-Band Tunneling in 3D Devices Vortrag: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 13 - 14. | |
| 1467. | Illarionov, Yu., Smith, A., Vaziri, S., Ostling, M., Müller, T., Lemme, M., Grasser, T.: Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: A Reliability Challenge Vortrag: Silicon Nanoelectronics Workshop, Honolulu, Hawaii, USA; 08.06.2014 - 09.06.2014; in: "2014 IEEE Silicon Nanoelectronics Workshop", (2014), ISBN: 978-1-4799-5677-7; S. 29 - 30. | |
| 1466. | Rupp, K., Bina, M., Wimmer, Y., Jungel, A., Grasser, T.: Cell-Centered Finite Volume Schemes for Semiconductor Device Simulation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 365 - 368. https://doi.org/10.1109/SISPAD.2014.6931639 | |
| 1465. | Grasser, T., Rzepa, G., Waltl, M., Gös, W., Rott, K., Rott, G.A., Reisinger, H., Franco, J., Kaczer, B.: Characterization and Modeling of Charge Trapping: From Single Defects to Devices Vortrag: IEEE International Conference on IC Design and Technology (ICICDT), Austin, TX, USA (eingeladen); 28.05.2014 - 30.05.2014; in: "Proceedings of IEEE International Conference on IC Design and Technology", (2014), ISBN: 978-1-4799-2153-9; S. 1 - 4. https://doi.org/10.1109/ICICDT.2014.6838620 | |
| 1464. | Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S.: Compact Modeling of Memristive IMP Gates for Reliable Stateful Logic Design Vortrag: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland; 19.06.2014 - 21.06.2014; in: "Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems", (2014), S. 26. | |
| 1463. | Makarov, A., Sverdlov, V., Selberherr, S.: Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators in: "Future Information Engineering", G. Lee (Hrg.); WITPRESS, 1, 2014, ISBN: 978-1-84564-855-8, S. 391 - 398. https://doi.org/10.2495/ICIE130451 | |
| 1462. | Stanojevic, Z., Baumgartner, O., Filipovic, L., Kosina, H.: Comprehensive Low-Field Mobility Modeling in Nano-Scaled SOI Channels Vortrag: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in: "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), S. 1 - 2. | |
| 1461. | Baer, E., Evanschitzky, P., Lorenz, J., Roger, F., Minixhofer, R., Filipovic, L., Orio, R., Selberherr, S.: Coupled Simulation to Determine Across Wafer Variations for Electrical and Reliability Parameters of Through-Silicon VIAs Vortrag: European Workshop on Materials for Advanced Metallization (MAM), Chemnitz, Germany; 02.03.2014 - 05.03.2014; in: "Book of Abstracts", (2014), 2 S. | |
| 1460. | Cervenka, J., Ellinghaus, P., Nedjalkov, M.: Deterministic Solution of the Discrete Wigner Equation Vortrag: International Conference on Numerical Methods and Applications, Borovets, Bulgaria; 20.08.2014 - 24.08.2014; in: "Eighth International Conference on Numerical Methods and Applications", (2014), S. 36. | |
| 1459. | Tyaginov, S. E., Bina, M., Franco, J., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J.M., Kaczer, B., Ceric, H., Grasser, T.: Dominant Mechanism of Hot-Carrier Degradation in Short- and Long-Channel Transistors Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 12.10.2014 - 16.10.2014; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8; S. 63 - 68. https://doi.org/10.1109/IIRW.2014.7049512 | |
| 1458. | Filipovic, L., Orio, R., Selberherr, S., Singulani, A. P., Roger, F., Minixhofer, R.: Effects of Sidewall Scallops on Open Tungsten TSVs Vortrag: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; S. 3E.3.1 - 3E.3.6. https://doi.org/10.1109/IRPS.2014.6860633 | |
| 1457. | Filipovic, L., Orio, R., Selberherr, S.: Effects of Sidewall Scallops on the Performance and Reliability of Filled Copper and Open Tungsten TSVs Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in: "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2; S. 321 - 326. https://doi.org/10.1109/IPFA.2014.6898137 | |
| 1456. | Ellinghaus, P., Nedjalkov, M., Selberherr, S.: Efficient Calculation of the Two-Dimensional Wigner Potential Vortrag: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 19 - 20. | |
| 1455. | Ceric, H., Selberherr, S.: Electromigration Induced Failure of Solder Bumps and the Role of IMC Poster: IEEE International Interconnect Technology Conference (IITC), San Jose, USA; 20.05.2014 - 23.05.2014; in: "Proceedings of the International Interconnect Technology Conference (IITC)", (2014), ISBN: 978-1-4799-5017-1; S. 265 - 267. https://doi.org/10.1109/IITC.2014.6831891 | |
| 1454. | Zisser, W. H., Ceric, H., Weinbub, J., Selberherr, S.: Electromigration Induced Resistance Increase in Open TSVs Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 249 - 252. https://doi.org/10.1109/SISPAD.2014.6931610 | |
| 1453. | Zisser, W. H., Ceric, H., Weinbub, J., Selberherr, S.: Electromigration Reliability of Open TSV Structures Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 29.09.2014 - 02.10.2014; in: "Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), S. 48. | |
| 1452. | Zisser, W. H., Ceric, H., Weinbub, J., Selberherr, S.: Electromigration Reliability of Open TSV Structures Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in: "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2; S. 317 - 320. https://doi.org/10.1109/IPFA.2014.6898179 | |
| 1451. | Ceric, H., Selberherr, S.: Electromigration Reliability of Solder Bumps Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in: "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2; S. 336 - 339. https://doi.org/10.1109/IPFA.2014.6898145 | |
| 1450. | Ceric, H., Zisser, W. H., Rovitto, M., Selberherr, S.: Electromigration in Solder Bumps: A Mean-Time-to-Failure TCAD Study Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 221 - 224. https://doi.org/10.1109/SISPAD.2014.6931603 | |
| 1449. | Sverdlov, V., Osintsev, D., Selberherr, S.: Electron Momentum and Spin Relaxation in Silicon Films: A Rigorous k p-based Approach Vortrag: European Conference on Mathematics for Industry (ECMI), Taormina, Italy (eingeladen); 09.06.2014 - 14.06.2014; in: "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), S. 454 - 456. | |
| 1448. | Grasser, T., Rott, K., Reisinger, H., Waltl, M., Gös, W.: Evidence for Defect Pairs in SiON pMOSFETs Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in: "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3929-9; S. 228 - 263. | |
| 1447. | Stanojevic, Z., Filipovic, L., Baumgartner, O., Kosina, H.: Fast Methods for Full-Band Mobility Calculation Vortrag: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 51 - 52. | |
| 1446. | Neophytou, N., Kosina, H.: Field Effect Density Modulation in Nanowires for Large Thermoelectric Power Factors: A Self-Consistent Atomistic Simulation Approach Vortrag: International Conference on Thermoelectrics, Nashville, USA; 06.07.2014 - 10.07.2014; in: "Book of Abstracts", (2014), 1 S. | |
| 1445. | Windbacher, T., Osintsev, D., Makarov, A., Mahmoudi, H., Sverdlov, V., Selberherr, S.: Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 193 - 194. | |
| 1444. | Stanojevic, Z., Baumgartner, O., Karner, M., Filipovic, L., Kernstock, C., Kosina, H.: Full-Band Modeling of Mobility in p-Type FinFETs Poster: Silicon Nanoelectronics Workshop, Honolulu, Hawaii, USA; 08.06.2014 - 09.06.2014; in: "2014 IEEE Silicon Nanoelectronics Workshop", (2014), ISBN: 978-1-4799-5676-0; S. 83 - 84. | |
| 1443. | Neophytou, N., Karamitaheri, H., Kosina, H.: Full-Band Simulations of Thermoelectric Properties of Si Nanowires and Thin Layers Vortrag: European Conference on Mathematics for Industry (ECMI), Taormina, Italy (eingeladen); 09.06.2014 - 14.06.2014; in: "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), S. 1. | |
| 1442. | Stanojevic, Z., Filipovic, L., Baumgartner, O., Karner, M., Kernstock, C., Kosina, H.: Full-Band Transport in Ultra-Narrow p-Type Si Channels: Field, Orientation, Strain Poster: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 07.04.2014 - 09.04.2014; in: "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), 4 S. | |
| 1441. | Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S.: High Performance MRAM-Based Stateful Logic Poster: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 07.04.2014 - 09.04.2014; in: "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9; S. 117 - 120. https://doi.org/10.1109/ULIS.2014.6813912 | |
| 1440. | Ellinghaus, P., Nedjalkov, M., Selberherr, S.: Implications of the Coherence Length on the Discrete Wigner Potential Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 155 - 156. | |
| 1439. | Moradinasab, M., Pourfath, M., Kosina, H.: Improved Active Region Designs for Mode Locking in Quantum Cascade Lasers Poster: International Quantum Cascade Lasers School & Workshop, Policoro (Matera), Italy; 07.09.2014 - 12.09.2014; in: "International Quantum Cascade Lasers School & Workshop 2014", (2014), S. 182 - 183. | |
| 1438. | Osintsev, D., Sverdlov, V., Windbacher, T., Selberherr, S.: Increasing Mobility and Spin Lifetime with Shear Strain in Thin Silicon Films Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 193 - 196. https://doi.org/10.1109/SISPAD.2014.6931596 | |
| 1437. | Osintsev, D., Sverdlov, V., Selberherr, S.: Increasing Mobility and Spin Lifetime with Shear Strain in Thin Silicon Films Vortrag: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in: "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), S. 1 - 2. | |
| 1436. | Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S.: Influence of Device Geometry on the Non-Volatile Magnetic Flip Flop Characteristics Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 297 - 300. https://doi.org/10.1109/SISPAD.2014.6931622 | |
| 1435. | Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S.: Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop Vortrag: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 07.04.2014 - 09.04.2014; in: "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9; S. 9 - 12. https://doi.org/10.1109/ULIS.2014.6813893 | |
| 1434. | Baumgartner, O., Stanojevic, Z., Filipovic, L., Grill, A., Grasser, T., Kosina, H., Karner, M.: Investigation of Quantum Transport in Nanoscaled GaN High Electron Mobility Transistors Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 117 - 120. https://doi.org/10.1109/SISPAD.2014.6931577 | |
| 1433. | Sverdlov, V., Mahmoudi, H., Makarov, A., Windbacher, T., Selberherr, S.: Magnetic Tunnel Junctions for Future Memory and Logic-in-Memory Applications Vortrag: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland (eingeladen); 19.06.2014 - 21.06.2014; in: "Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems", (2014), S. 17. | |
| 1432. | Schrems, M., Siegert, J., Dorfi, P., Kraft, J., Stueckler, E., Schrank, F., Selberherr, S.: Manufacturing of 3D Integrated Sensors and Circuits Vortrag: European Solid-State Device Research Conference (ESSDERC), Venice, Italy (eingeladen); 22.09.2014 - 26.09.2014; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2014), ISBN: 978-1-4799-4377-7; S. 162 - 165. https://doi.org/10.1109/ESSDERC.2014.6948785 | |
| 1431. | Kaczer, B., Chen, C., Weckx, P., Roussel, Ph. J., Toledano-Luque, M., Cho, M., Watt, J., Chanda, K., Groeseneken, G., Grasser, T.: Maximizing reliable performance of advanced CMOS circuits-A case study Vortrag: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; S. 2D.4.1 - 2D.4.6. | |
| 1430. | Rudolf, F., Wimmer, Y., Weinbub, J., Rupp, K., Selberherr, S.: Mesh Generation Using Dynamic Sizing Functions Vortrag: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 15.06.2014 - 20.06.2014; in: "Proc. 4th European Seminar on Computing", (2014), S. 191. | |
| 1429. | Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S.: Micromagnetic Modeling of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer Vortrag: 10th European Conference on Magnetic Sensors and Actuators (EMSA 2014), Vienna, Austria; 06.07.2014 - 09.07.2014; in: "Book of Abstracts", (2014), ISBN: 978-3-85465-021-8; S. 166. | |
| 1428. | Rott, G.A., Rott, K., Reisinger, H., Gustin, W., Grasser, T.: Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel Transistors Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 29.09.2014 - 02.10.2014; in: "Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), S. 40. | |
| 1427. | Osintsev, D., Sverdlov, V., Selberherr, S.: Mobility and Spin Lifetime Enhancement in Thin Silicon Films by Shear Strain Vortrag: APS March Meeting, Denver, USA; 03.03.2014 - 07.03.2014; in: "Bulletin of the American Physical Society (APS March Meeting)", 59/1 (2014), 1 S. | |
| 1426. | Sverdlov, V., Ghosh, J., Osintsev, D., Selberherr, S.: Modeling Silicon Spintronics Vortrag: International Conference on Mathematical Models and Methods in Applied Sciences (MMMAS), Saint-Petersburg, Russia (eingeladen); 23.09.2014 - 25.09.2014; in: "Abstracts 2014", (2014), S. 78. | |
| 1425. | Sverdlov, V., Ghosh, J., Mahmoudi, H., Makarov, A., Osintsev, D., Windbacher, T., Selberherr, S.: Modeling Spin-Based Electronic Devices Hauptvortrag: International Conference on Microelectronics (MIEL), Belgrade, Serbia (eingeladen); 12.05.2014 - 14.05.2014; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2014), ISBN: 978-1-4799-5295-3; S. 27 - 34. https://doi.org/10.1109/MIEL.2014.6842081 | |
| 1424. | Makarov, A., Osintsev, D., Sverdlov, V., Selberherr, S.: Modeling Spin-Based Electronic Devices Vortrag: Nano and Giga Challenges in Microelectronics (NGCM), Phoenix, USA (eingeladen); 10.03.2014 - 14.03.2014; in: "Book of Abstracts", (2014), 1 S. | |
| 1423. | Selberherr, S. (2014). Modeling Spin-Based Electronic Devices. IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba, Non-EU. (reposiTUm) | |
| 1422. | Sverdlov, V., Ghosh, J., Mahmoudi, H., Makarov, A., Osintsev, D., Windbacher, T., Selberherr, S.: Modeling of Spin-Based Silicon Technology Vortrag: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden (eingeladen); 07.04.2014 - 09.04.2014; in: "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9; S. 1 - 4. https://doi.org/10.1109/ULIS.2014.6813891 | |
| 1421. | Giering, K., Sohrmann, C., Rzepa, G., Heiß, L., Grasser, T., Jancke, R.: NBTI Modeling in Analog Circuits and its Application to Long-Term Aging Simulations Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 12.10.2014 - 16.10.2014; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", IEEE, (2014), ISBN: 978-1-4799-7308-8; S. 29 - 34. https://doi.org/10.1109/IIRW.2014.7049501 | |
| 1420. | Dimov, I., Nedjalkov, M., Sellier, J. M., Selberherr, S.: Neumann Series Analysis of the Wigner Equation Solution Vortrag: European Conference on Mathematics for Industry (ECMI), Taormina, Italy (eingeladen); 09.06.2014 - 14.06.2014; in: "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), S. 459. | |
| 1419. | Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S.: New Design of Spin-Torque Nano-Oscillators Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona (eingeladen); 30.11.2014 - 05.12.2014; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2014), ISBN: 978-3-901578-28-1; S. 63. | |
| 1418. | Tyaginov, S. E., Bina, M., Franco, J., Kaczer, B., Grasser, T.: On the Importance of Electron-electron Scattering for Hot-carrier Degradation Vortrag: International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan; 08.09.2014 - 11.09.2014; in: "Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM)", (2014), S. 858 - 859. | |
| 1417. | Orio, R., Gousseau, S., Moreau, S., Ceric, H., Selberherr, S., Farcy, A., Bay, F., Inal, K., Montmitonnet, P.: On the Material Depletion Rate Due to Electromigration in a Copper TSV Structure Poster: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake, CA, USA; 12.10.2014 - 16.10.2014; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7274-6; S. 111 - 114. https://doi.org/10.1109/IIRW.2014.7049523 | |
| 1416. | Grasser, T., Gös, W., Wimmer, Y., Schanovsky, F., Rzepa, G., Waltl, M., Rott, K., Reisinger, H., Afanas´Ev, V., Stesmans, A., El-Sayed, A., Shluger, A.: On the Microscopic Structure of Hole Traps in pMOSFETs Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 15.12.2014 - 17.12.2014; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2014), ISBN: 978-1-4799-8001-7; S. 530 - 533. https://doi.org/10.1109/IEDM.2014.7047093 | |
| 1415. | Stanojevic, Z., Baumgartner, O., Karner, M., Filipovic, L., Kernstock, C., Kosina, H.: On the Validity of Momentum Relaxation Time in Low-Dimensional Carrier Gases Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 181 - 184. https://doi.org/10.1109/SISPAD.2014.6931593 | |
| 1414. | Ellinghaus, P., Nedjalkov, M., Selberherr, S.: Optimized Particle Regeneration Scheme for the Wigner Monte Carlo Method Vortrag: International Conference on Numerical Methods and Applications, Borovets, Bulgaria; 20.08.2014 - 24.08.2014; in: "Eighth International Conference on Numerical Methods and Applications", (2014), S. 19. | |
| 1413. | Rupp, K., Tillet, Ph., Rudolf, F., Weinbub, J., Grasser, T., Jüngel, A.: Performance Portability Study of Linear Algebra Kernels in OpenCL Vortrag: International Workshop on OpenCL (IWOCL), Bristol, UK; 12.05.2014 - 13.05.2014; in: "Proceedings of the International Workshop on OpenCL 2013 & 2014 (IWOCL)", (2014), ISBN: 978-1-4503-3007-7; 11 S. https://doi.org/10.1145/2664666.2664674 | |
| 1412. | Tyaginov, S. E., Bina, M., Franco, J., Osintsev, D., Triebl, O., Kaczer, B., Grasser, T.: Physical Modeling of Hot-Carrier Degradation for Short- and Long-channel MOSFETs Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; S. XT16.1 - XT16.8. | |
| 1411. | Wimmer, Y., Tyaginov, S. E., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J.M., Minixhofer, R., Ceric, H., Grasser, T.: Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 12.10.2014 - 16.10.2014; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", IEEE, (2014), ISBN: 978-1-4799-7308-8; S. 58 - 62. https://doi.org/10.1109/IIRW.2014.7049511 | |
| 1410. | Rzepa, G., Gös, W., Rott, G.A., Rott, K., Karner, M., Kernstock, C., Kaczer, B., Reisinger, H., Grasser, T.: Physical Modeling of NBTI: From Individual Defects to Devices Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 81 - 84. https://doi.org/10.1109/SISPAD.2014.6931568 | |
| 1409. | Filipovic, L., Orio, R., Selberherr, S.: Process and Performance of Copper TSVs Vortrag: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in: "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), S. 1 - 2. | |
| 1408. | Filipovic, L., Orio, R., Selberherr, S.: Process and Reliability of SF6/O2 Plasma Etched Copper TSVs Vortrag: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Ghent, Belgium; 07.04.2014 - 09.04.2014; in: "Proceedings of the IEEE 15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)", (2014), ISBN: 978-1-4799-4791-1; 4 S. https://doi.org/10.1109/EuroSimE.2014.6813768 | |
| 1407. | Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S.: Pushing a Non-Volatile Magnetic Device Structure Towards a Universal CMOS Logic Replacement Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona (eingeladen); 30.11.2014 - 05.12.2014; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2014), ISBN: 978-3-901578-28-1; S. 62. | |
| 1406. | Ceric, H., Zisser, W. H., Selberherr, S.: Quantum Mechanical Calculations of Electromigration Characteristics Vortrag: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA (eingeladen); 15.10.2014 - 17.10.2014; in: "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), S. 21. | |
| 1405. | Franco, J., Kaczer, B., Waldron, N., Roussel, Ph. J., Alian, A., Pourghaderi, M., Ji, Z., Grasser, T., Kauerauf, T., Sioncke, S., Collaert, N., Thean, A., Groeseneken, G.: RTN and PBTI-induced Time-Dependent Variability of Replacement Metal-Gate High-k InGaAs FinFETs Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 15.12.2014 - 17.12.2014; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2014), ISBN: 978-1-4799-8001-7; S. 506 - 509. https://doi.org/10.1109/IEDM.2014.7047087 | |
| 1404. | Vexler, M., Illarionov, Yu., Tyaginov, S. E., Sokolov, N. S., Fedorov, V. V., Grasser, T.: Simulation of the Electrical Characteristics of the Devices with Thin Calcium Fluoride Films on Silicon-(111) Using MINIMOS-NT Vortrag: DIELECTRICS-2014, St-Petersburg, Russia; 02.06.2014 - 06.06.2014; in: "Materials of XIII International conference DIELECTRICS", (2014), S. 159 - 162. | |
| 1403. | Wang, Y., Baboulin, M., Rupp, K., Le Maitre, O.: Solving 3D incompressible Navier-Stokes equations on hybrid CPU/GPU systems Vortrag: High Performance Computing Symposium (HPC), Tampa, Florida, USA; 13.04.2014 - 16.04.2014; in: "HPC '14 Proceedings of the High Performance Computing Symposium", ACM, (2014), S. 1 - 8. | |
| 1402. | Sverdlov, V., Osintsev, D., Selberherr, S.: Spin Behaviour in Strained Silicon Films Vortrag: European Material Research Society (E-MRS) Fall Meeting, Warsaw, Poland (eingeladen); 15.09.2014 - 18.09.2014; in: "Abstracts of E-MRS Fall Meeting", (2014), 1 S. | |
| 1401. | Ghosh, J., Sverdlov, V., Selberherr, S.: Spin Diffusion in Silicon from a Ferromagnetic Contact Vortrag: 10th European Conference on Magnetic Sensors and Actuators (EMSA 2014), Vienna, Austria; 06.07.2014 - 09.07.2014; in: "Book of Abstracts", (2014), ISBN: 978-3-85465-021-8; S. 165. | |
| 1400. | Ghosh, J., Sverdlov, V., Selberherr, S.: Spin Injection in Silicon: The Role of Screening Effects Vortrag: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 63 - 64. | |
| 1399. | Sverdlov, V., Osintsev, D., Selberherr, S. (2014). Spin Lifetime in Strained Silicon Films. In 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 (pp. 57–58), Singapore, Singapore. https://doi.org/10.1109/ISTDM.2014.6874695 (reposiTUm) | |
| 1398. | Touski, S., Chaghazardi, Z., Pourfath, M., Moradinasab, M., Faez, R., Kosina, H.: Spin Transport in Graphene Nanoribbons: The Role of Surface-Corrugation Vortrag: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 101 - 102. | |
| 1397. | Filipovic, L., Selberherr, S.: Spray Pyrolysis Deposition for Gas Sensor Integration in the Backend of Standard CMOS Processes Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Guilin, China (eingeladen); 28.10.2014 - 31.10.2014; in: "Proc.Intl.Conf.on Solid-State and Integrated Circuit Technology (ICSICT)", (2014), ISBN: 978-1-4799-3282-5; S. 1692 - 1695. https://doi.org/10.1109/ICSICT.2014.7021507 | |
| 1396. | Papaleo, S., Zisser, W. H., Singulani, A. P., Ceric, H., Selberherr, S.: Stress Analysis in Open TSVs after Nanoindentation Vortrag: GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects, Thun, Switzerland; 04.09.2014 - 05.09.2014; in: "Abstracts", (2014), S. 39 - 40. | |
| 1395. | Filipovic, L., Selberherr, S.: Stress Considerations for System-on-Chip Gas Sensor Integration in CMOS Technology Vortrag: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 15.10.2014 - 17.10.2014; in: "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), S. 46. | |
| 1394. | Zisser, W. H., Ceric, H., Selberherr, S.: Stress Development and Void Evolution in Open TSVs Vortrag: GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects, Thun, Switzerland; 04.09.2014 - 05.09.2014; in: "Abstracts", (2014), S. 38 - 39. | |
| 1393. | Papaleo, S., Zisser, W. H., Singulani, A. P., Ceric, H., Selberherr, S.: Stress Evolution During the Nanoindentation in Open TSVs Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 15.10.2014 - 17.10.2014; in: "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), S. 52. | |
| 1392. | Sverdlov, V., Makarov, A., Selberherr, S.: Structural Optimization of MTJs for STT-MRAM and Oscillator Applications Vortrag: Symposium on CMOS Emerging Technologies, Grenoble, France; 06.07.2014 - 08.07.2014; in: "Abstracts: 2014 CMOS Emerging Technologies Research Symposium", (2014), ISBN: 978-1-927500-45-3; S. 19. | |
| 1391. | Bury, E., Degraeve, R., Cho, M., Kaczer, B., Gös, W., Grasser, T., Horiguchi, N., Groeseneken, G.: Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG Devices Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in: "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3929-9; S. 254 - 257. | |
| 1390. | Rudolf, F., Weinbub, J., Rupp, K., Morhammer, A., Selberherr, S.: Template-Based Mesh Generation for Semiconductor Devices Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 217 - 220. https://doi.org/10.1109/SISPAD.2014.6931602 | |
| 1389. | Filipovic, L., Selberherr, S.: The Effects of Etching and Deposition on the Performance and Stress Evolution of Open Through Silicon Vias Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 29.09.2014 - 02.10.2014; in: "Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), S. 36. | |
| 1388. | Sellier, J. M., Nedjalkov, M., Dimov, I., Selberherr, S.: The Multi-Dimensional Transient Challenge: The Wigner Particle Approach Vortrag: International Workshop on Computational Electronics (IWCE), Paris, France (eingeladen); 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 119 - 120. | |
| 1387. | Ellinghaus, P., Nedjalkov, M., Selberherr, S.: The Wigner Monte Carlo Method for Accurate Semiconductor Device Simulation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 113 - 116. https://doi.org/10.1109/SISPAD.2014.6931576 | |
| 1386. | Neophytou, N., Kosina, H.: Thermoelectric Properties of Gated Silicon Nanowires Vortrag: APS March Meeting, Denver, USA; 03.03.2014 - 07.03.2014; in: "Bulletin of the American Physical Society (APS March Meeting)", (2014), 1 S. | |
| 1385. | Neophytou, N., Kosina, H.: Thermoelectric properties of gated Si nanowires Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 197 - 198. | |
| 1384. | Filipovic, L., Rudolf, F., Baer, E., Evanschitzky, P., Lorenz, J., Roger, F., Singulani, A. P., Minixhofer, R., Selberherr, S.: Three-Dimensional Simulation for the Reliability and Electrical Performance of Through-Silicon Vias Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 341 - 344. https://doi.org/10.1109/SISPAD.2014.6931633 | |
| 1383. | Osintsev, D., Sverdlov, V., Selberherr, S.: Valley Degeneracy and Spin Lifetime Enhancement in Stressed Silicon Films Poster: 8th International Conference on Physics and Applications of Spin Phenomena in Solids (PASPS VIII), Washington, D.C., USA; 28.07.2014 - 31.07.2014; in: "Book of Abstracts", (2014), S. 1. | |
| 1382. | Osintsev, D., Sverdlov, V., Neophytou, N., Selberherr, S.: Valley Splitting and Spin Lifetime Enhancement in Strained Silicon Heterostructures Poster: International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 23.02.2014 - 28.02.2014; in: "Proceedings of International Winterschool on New Developments in Solid State Physics", (2014), S. 88 - 89. | |
| 1381. | Osintsev, D., Sverdlov, V., Neophytou, N., Selberherr, S.: Valley Splitting and Spin Lifetime Enhancement in Ultra-Scaled MOSFETs Vortrag: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 59 - 60. | |
| 1380. | Zisser, W. H., Ceric, H., Selberherr, S.: Void Evolution in Open TSVs Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 15.10.2014 - 17.10.2014; in: "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), S. 59. | |
| 1379. | Gös, W., Toledano-Luque, M., Baumgartner, O., Schanovsky, F., Kaczer, B., Grasser, T.: A Comprehensive Model for Correlated Drain and Gate Current Fluctuations Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 46 - 47. | |
| 1378. | Schanovsky, F., Baumgartner, O., Gös, W., Grasser, T.: A Detailed Evaluation of Model Defects as Candidates for the Bias Temperature Instability Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 1 - 4. https://doi.org/10.1109/SISPAD.2013.6650559 | |
| 1377. | Rupp, K., Rudolf, F., Weinbub, J.: A Discussion of Selected Vienna-Libraries for Computational Science Vortrag: C++Now, Aspen, CO, USA; 12.05.2013 - 17.05.2013; in: "Proceedings of C++Now (2013)", (2013), 10 S. | |
| 1376. | Rupp, K., Tillet, Ph., Smith, B., Grasser, T., Jungel, A.: A Note on the GPU Acceleration of Eigenvalue Computations Vortrag: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodes, Greece; 21.09.2013 - 27.09.2013; in: "AIP Proceedings, volume 1558", (2013), S. 1536 - 1539. | |
| 1375. | Illarionov, Yu., Tyaginov, S. E., Bina, M., Grasser, T.: A method to determine the lateral trap position in ultra-scaled MOSFETs Vortrag: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 24.09.2013 - 27.09.2013; in: "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials(SSDM)", (2013), ISBN: 978-4-86348-362-0; S. 728 - 729. | |
| 1374. | Orio, R., Selberherr, S.: About Voids in Copper Interconnects Vortrag: International Conference on Materials for Advanced Technologies (ICMAT), Singapore (eingeladen); 30.06.2013 - 05.07.2013; in: "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2013)", (2013), S. 8. | |
| 1373. | Grasser, T., Rott, K., Reisinger, H., Wagner, P.-J., Gös, W., Schanovsky, F., Waltl, M., Toledano-Luque, M., Kaczer, B.: Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect Spectroscopy Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), S. 1 - 6. | |
| 1372. | Schanovsky, F., Gös, W., Grasser, T.: Advanced Modeling of Charge Trapping at Oxide Defects Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom (eingeladen); 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 451 - 458. https://doi.org/10.1109/SISPAD.2013.6650671 | |
| 1371. | Ceric, H., Orio, R., Selberherr, S.: Analysis of Solder Bump Electromigration Reliability Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in: "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5; S. 713 - 716. https://doi.org/10.1109/IPFA.2013.6599258 | |
| 1370. | Makarov, A., Sverdlov, V., Selberherr, S.: Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer: Micromagnetic Modeling Poster: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 08.12.2013 - 13.12.2013; in: "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2013), 2 S. | |
| 1369. | Osintsev, D., Sverdlov, V., Selberherr, S.: Calculation of the Electron Mobility and Spin Lifetime Enhancement by Strain in Thin Silicon Films Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 24.06.2013 - 28.06.2013; in: "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6; S. 69 - 70. | |
| 1368. | Molnar, M., Palankovski, V., Donoval, D., Kuzmik, J., Kovac, J., Chvala, A., Marek, J., Pribytny, P., Selberherr, S.: Characterization of InAlN/GaN HEMTs at Elevated Temperatures Supported by Numerical Simulation Vortrag: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Warnemunde, Germany; 26.05.2013 - 29.05.2013; in: "Proceedings of the Workshop on Compound Semiconductor Devices and Integrated Circuits", (2013), ISBN: 978-3-00-041435-0; S. 135 - 136. | |
| 1367. | Makarov, A., Sverdlov, V., Selberherr, S.: Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators Vortrag: Intl.Conf.on Information Engineering (ICIE), Hong Kong; 01.11.2013 - 02.11.2013; in: "Abstracts Intl.Conf.on Information Engineering (ICIE)", (2013), S. 7. | |
| 1366. | Makarov, A., Sverdlov, V., Selberherr, S.: Concept of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs Vortrag: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 24.09.2013 - 27.09.2013; in: "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (SSDM 2013)", (2013), ISBN: 978-4-86348-362-0; S. 796 - 797. | |
| 1365. | Coppeta, R., Ceric, H., Holec, D., Grasser, T.: Critical thickness for GaN thin film on AlN substrate Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; S. 133 - 136. | |
| 1364. | Weckx, P., Kaczer, B., Toledano-Luque, M., Grasser, T., Roussel, Ph. J., Kukner, H., Raghavan, P., Catthoor, F., Groeseneken, G.: Defect-based Methodology for Workload-dependent Circuit Lifetime Projections - Application to SRAM Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), S. 1 - 7. | |
| 1363. | Toledano-Luque, M., Kaczer, B., Franco, J., Roussel, P., Bina, M., Grasser, T., Cho, M., Weckx, P., Groeseneken, G.: Degradation of time dependent variability due to interface state generation Vortrag: International Symposium on VLSI Technology, Kyoto, Japan; 11.06.2013 - 14.06.2013; in: "2013 Symposium on VLSI Technology (VLSIT)", (2013), ISBN: 978-1-4673-5226-0; S. 190 - 191. | |
| 1362. | Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S.: Design and Applications of Magnetic Tunnel Junction Based Logic Circuits Vortrag: The 9th Conference on Ph.D. Research in Microelectronics & Electronics- PRIME 2013, Villach, Austria; 24.06.2013 - 27.06.2013; in: "Proceedings of the 9th Conference on Ph.D. Research in Microelectronics & Electronics", (2013), ISBN: 978-1-4673-4580-4; S. 157 - 160. https://doi.org/10.1109/PRIME.2013.6603122 | |
| 1361. | Pobegen, G., Nelhiebel, M., Grasser, T.: Detrimental impact of hydrogen passivation on NBTI and HC degradation Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), S. 1 - 6. | |
| 1360. | Baumgartner, O., Bina, M., Gös, W., Schanovsky, F., Toledano-Luque, M., Kaczer, B., Kosina, H., Grasser, T.: Direct Tunneling and Gate Current Fluctuations Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 17 - 20. https://doi.org/10.1109/SISPAD.2013.6650563 | |
| 1359. | Rott, G.A., Nielen, H., Reisinger, H., Gustin, W., Tyaginov, S. E., Grasser, T.: Drift Compensating Effect during Hot-Carrier Degradation of 130nm Dual Gate Oxide p-channel Transistors Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; S. 73 - 77. | |
| 1358. | Singulani, A. P., Ceric, H., Langer, E., Carniello, S.: Effects of Bosch scallops on metal layer stress of an open Through Silicon Via technology Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), ISBN: 978-1-4799-0112-8; S. CP.2.1 - CP.2.5. https://doi.org/10.1109/IRPS.2013.6532066 | |
| 1357. | Zisser, W. H., Ceric, H., Orio, R., Selberherr, S.: Electromigration Analyses of Open TSVs Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 244 - 247. https://doi.org/10.1109/SISPAD.2013.6650620 | |
| 1356. | Ceric, H., Singulani, A. P., Orio, R., Selberherr, S.: Electromigration Enhanced Growth of Intermetallic Compound in Solder Bumps Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; S. 166 - 169. https://doi.org/10.1109/IIRW.2013.6804185 | |
| 1355. | Zisser, W. H., Ceric, H., Orio, R., Selberherr, S.: Electromigration Induced Stress in Open TSVs Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; S. 142 - 145. https://doi.org/10.1109/IIRW.2013.6804179 | |
| 1354. | Touski, S., Pourfath, M., Kosina, H.: Electronic Transport in Graphene Nanoribbons in the Presence of Substrate Surface Corrugation Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 108 - 109. | |
| 1353. | Osintsev, D., Sverdlov, V., Selberherr, S.: Enhanced Intervalley Splitting and Reduced Spin Relaxation in Strained Thin Silicon Films Vortrag: APS March Meeting, Baltimore, Maryland, USA; 18.03.2013 - 22.03.2013; in: "Bulletin American Physical Society (APS March Meeting)", (2013), 1 S. | |
| 1352. | Coppeta, R., Ceric, H., Karunamurthy, B., Grasser, T.: Epitaxial Volmer-Weber Growth Modelling Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 45 - 48. https://doi.org/10.1109/SISPAD.2013.6650570 | |
| 1351. | Tyaginov, S. E., Bina, M., Franco, J., Osintsev, D., Wimmer, Y., Kaczer, B., Grasser, T.: Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETs Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; S. 98 - 101. | |
| 1350. | Osintsev, D., Sverdlov, V., Selberherr, S.: Evaluation of Spin Lifetime in Strained UT2B Silicon-On-Insulator MOSFETs Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 236 - 239. https://doi.org/10.1109/SISPAD.2013.6650618 | |
| 1349. | Kaczer, B., Afanas´Ev, V., Rott, K., Cerbu, F., Franco, J., Gös, W., Grasser, T., Madia, O., Nguyen, D., Stesmans, A., Reisinger, H., Toledano-Luque, M., Weckx, P.: Experimental characterization of BTI defects Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom (eingeladen); 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 444 - 450. https://doi.org/10.1109/SISPAD.2013.6650670 | |
| 1348. | Stanojevic, Z., Karner, M., Kosina, H.: Exploring the Design Space of Non-Planar Channels: Shape, Orientation, and Strain Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 09.12.2013 - 11.12.2013; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2013), S. 332 - 335. https://doi.org/10.1109/IEDM.2013.6724618 | |
| 1347. | Makarov, A., Sverdlov, V., Selberherr, S.: Fast Switching STT-MRAM Cells for Future Universal Memory Vortrag: Advanced Workshop on Frontiers in Electronics (WOFE), San Juan, Puerto Rico (eingeladen); 17.12.2013 - 20.12.2013; in: "Abstracts Advanced Workshop on Frontiers in Electronics (WOFE)", (2013), 1 S. | |
| 1346. | Neophytou, N., Stanojevic, Z., Kosina, H.: Full Band Calculations of Low-field Mobility in p-type Silicon Nanowire MOSFETs Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 81 - 84. https://doi.org/10.1109/SISPAD.2013.6650579 | |
| 1345. | Grasser, T.: Fundamentals of RTN, BTI, and Hot Carrier Degradation: A Matter of Timescales Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA (Tutorial) (eingeladen); 14.04.2013 - 18.04.2013; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), S. 1. | |
| 1344. | Makarov, A., Sverdlov, V., Selberherr, S.: Geometry Optimization of Spin-Torque Oscillators Composed of Two MgO-MTJs with a Shared Free Layer Vortrag: International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey; 02.09.2013 - 06.09.2013; in: "Proceedings of the International Conference on Nanoscale Magnetism", (2013), S. 69. | |
| 1343. | Grasser, T., Rott, K., Reisinger, H., Waltl, M., Wagner, P.-J., Schanovsky, F., Gös, W., Pobegen, G., Kaczer, B.: Hydrogen-Related Volatile Defects as the Possible Cause for the Recoverable Component of NBTI Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 09.12.2013 - 11.12.2013; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2013), S. 409 - 412. https://doi.org/10.1109/IEDM.2013.6724637 | |
| 1342. | Singulani, A. P., Ceric, H., Filipovic, L., Langer, E.: Impact of Bosch Scallops Dimensions on Stress of an Open Through Silicon Via Technology Vortrag: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Poland; 14.04.2013 - 17.04.2013; in: "Proceedings of the IEEE 14th International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EurSimE)", (2013), ISBN: 978-1-4673-6137-8; 6 S. https://doi.org/10.1109/EuroSimE.2013.6529938 | |
| 1341. | Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S.: Impact of Device Parameters on the Reliability of the Magnetic Tunnel Junction Based Implication Logic Gates Poster: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; 08.04.2013 - 11.04.2013; in: "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4; S. 68 - 69. | |
| 1340. | Ceric, H., Singulani, A. P., Orio, R., Selberherr, S.: Impact of Intermetallic Compound on Solder Bump Electromigration Reliability Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 73 - 76. https://doi.org/10.1109/SISPAD.2013.6650577 | |
| 1339. | Weinbub, J., Rupp, K., Selberherr, S.: Increasing Flexibility and Reusability of Finite Element Simulations With ViennaX Vortrag: International Congress on Computational Engineering and Sciences (FEMTEC), Las Vegas, USA; 20.05.2013 - 25.05.2013; in: "Abstracts 4th International Congress on Computational Engineering and Sciences", (2013), 1 S. | |
| 1338. | Osintsev, D., Sverdlov, V., Selberherr, S.: Influence of Surface Roughness Scattering on Spin Lifetime in Silicon Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 76 - 77. | |
| 1337. | Orio, R., Ceric, H., Selberherr, S.: Influence of Temperature on the Standard Deviation of Electromigration Lifetimes Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 232 - 235. https://doi.org/10.1109/SISPAD.2013.6650617 | |
| 1336. | Ghosh, J., Sverdlov, V., Selberherr, S.: Influence of a Space Charge Region on Spin Transport in Semiconductor Vortrag: International Semiconductor Device Research Symposium (ISDRS), Maryland, USA; 11.12.2013 - 13.12.2013; in: "Abstracts International Semiconductor Device Research Symposium (ISDRS)", (2013), ISBN: 978-1-63173-156-3; S. 27. | |
| 1335. | Osintsev, D., Sverdlov, V., Selberherr, S.: Influence of the Valley Degeneracy on Spin Relaxation in Thin Silicon Films Poster: International Conference on Ultimate Integration of Silicon (ULIS), University of Warwick, UK; 19.03.2013 - 21.03.2013; in: "The 14th Edition of the `International Conference on Ultimate Integration on Silicon´ (ULIS 2013)", (2013), ISBN: 978-1-4673-4802-7; S. 221 - 224. https://doi.org/10.1109/ULIS.2013.6523525 | |
| 1334. | Neophytou, N., Karamitaheri, H., Kosina, H.: Low Dimensional Semiconductor Thermoelectric Materials: Design Approaches from Atomistic Calculations for Electrons and Phonons Vortrag: The 32nd International Conference on Thermoelectrics, Kobe, Japan; 30.06.2013 - 04.07.2013; in: "Book of Abstracts", (2013), 1 S. | |
| 1333. | Neophytou, N., Stanojevic, Z., Kosina, H.: Low-Field Mobility of Ultra-Narrow Si Nanowire MOSFETs Using Self-Consistent Full-Band Simulations Poster: International Conference on One Dimensional Nanomaterials (ICON), Annecy, France; 23.09.2013 - 26.09.2013; in: "Booklet of Abstracts, Fifth International Conference on One Dimensional Nanomaterials", (2013), S. 142. | |
| 1332. | Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S.: MRAM-based Logic Array for Large-Scale Non-Volatile Logic-in-Memory Applications Vortrag: 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA; 15.07.2013 - 17.07.2013; in: "Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures", (2013), ISBN: 978-1-4799-0873-8; Paper-Nr. 26-27, 2 S. https://doi.org/10.1109/NanoArch.2013.6623033 | |
| 1331. | Makarov, A., Sverdlov, V., Selberherr, S.: Magnetic oscillation of the transverse domain wall in a penta-layer MgO-MTJ Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 24.06.2013 - 28.06.2013; in: "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6; S. 338 - 339. | |
| 1330. | Schrems, M., Schrank, C., Siegert, J., Kraft, J., Teva, J., Selberherr, S.: Metrology Requirements for Manufacturing 3D Integrated ICs Vortrag: International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN), Gaithersburg, USA (eingeladen); 25.03.2013 - 28.03.2013; in: "Proceedings International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN)", (2013), S. 137 - 139. | |
| 1329. | Filipovic, L., Baumgartner, O., Kosina, H.: Modeling Direct Band-to-Band Tunneling using QTBM Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 212 - 215. https://doi.org/10.1109/SISPAD.2013.6650612 | |
| 1328. | Sverdlov, V., Mahmoudi, H., Makarov, A., Osintsev, D., Weinbub, J., Windbacher, T., Selberherr, S.: Modeling Spin-Based Devices in Silicon Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan (eingeladen); 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 70 - 71. | |
| 1327. | Filipovic, L., Selberherr, S., Mutinati, G., Brunet, E., Steinhauer, S., Köck, A., Teva, J., Kraft, J., Siegert, J., Schrank, F.: Modeling Spray Pyrolysis Deposition Vortrag: World Congress on Engineering (WCE), London, UK; 03.07.2013 - 05.07.2013; in: "Proceedings of the World Congress on Engineering (WCE) Vol II", (2013), ISBN: 978-988-19252-8-2; S. 987 - 992. | |
| 1326. | Stanojevic, Z., Kosina, H.: Modeling Surface-Roughness-Induced Scattering in Non-Planar Silicon Nanostructures Vortrag: Silicon Nanoelectronics Workshop, Kyoto, Japan; 09.06.2013 - 10.06.2013; in: "The 2013 Silicon Nanoelectronics Workshop (SNW)", (2013), S. 93 - 94. | |
| 1325. | Molnar, M., Palankovski, V., Donoval, D., Kuzmik, J., Kovac, J., Chvala, A., Marek, J., Pribytny, P., Selberherr, S.: Modeling and Characterization of InAlN/GaN HEMTs at Elevated Temperatures Vortrag: International Conference on Advances in Electronic and Photonic Technologies, High Tatras, Spa Novy Smokovec, Slovakia; 02.06.2013 - 05.06.2013; in: "Proceedings of ADEPT International Conference on Advances in Electronic and Photonic Technologies", (2013), ISBN: 978-80-554-0689-3; S. 48 - 51. | |
| 1324. | Baumgartner, O., Stanojevic, Z., Kosina, H.: Modeling of the Effects of Band Structure and Transport in Quantum Cascade Detectors Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 86 - 87. | |
| 1323. | Filipovic, L., Selberherr, S., Mutinati, G., Brunet, E., Steinhauer, S., Köck, A., Teva, J., Kraft, J., Siegert, J., Schrank, F., Gspan, C., Grogger, W.: Modeling the Growth of Thin SnO2 Films using Spray Pyrolysis Deposition Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 208 - 211. https://doi.org/10.1109/SISPAD.2013.6650611 | |
| 1322. | Wolf, S., Neophytou, N., Stanojevic, Z.: Monte Carlo Simulations Of Thermal Conductivity Nanoporous Si Membranes Vortrag: European Conference on Thermoelectrics (ECT), Noordwijk, The Netherlands; 18.11.2013 - 20.11.2013; in: "Book of Abstracts", (2013), S. 1 - 4. | |
| 1321. | Gös, W., Toledano-Luque, M., Schanovsky, F., Bina, M., Baumgartner, O., Kaczer, B., Grasser, T.: Multi-Phonon Processes as the Origin of Reliability Issues Vortrag: Meeting of the Electrochemical Society (ECS), San Francisco, USA (eingeladen); 27.10.2013 - 01.11.2013; in: "ECS Transactions 2013 - "Semiconductors, Dielectrics, and Materials for Nanoelectronics 11"", 58/7/ (2013), S. 31 - 47. https://doi.org/10.1149/05807.0031ecst | |
| 1320. | Windbacher, T., Makarov, A., Mahmoudi, H., Sverdlov, V., Selberherr, S.: Novel Bias-Field-Free Large Gain Spin-Transfer Oscillator Vortrag: Annual Conference on Magnetism and Magnetic Materials, Denver, USA; 04.11.2013 - 08.11.2013; in: "Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM)", (2013), S. 456 - 457. | |
| 1319. | Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S.: Novel MTJ-Based Shift Register for Non-Volatile Logic Applications Vortrag: 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA; 15.07.2013 - 17.07.2013; in: "Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures", (2013), S. 36 - 37. https://doi.org/10.1109/NanoArch.2013.6623038 | |
| 1318. | Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S.: Novel Non-Volatile Magnetic Flip Flop Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Chicago Illinois USA; 29.07.2013 - 02.08.2013; in: "In Proceedings of Seventh International School on Spintronics and Quantum Information Technology", (2013), 1 S. | |
| 1317. | Rupp, K., Smith, B.: On Level Scheduling for Incomplete LU Factorization Preconditioners on Accelerators Vortrag: International Congress on Computational Engineering and Sciences (FEMTEC), Las Vegas, USA; 19.05.2013 - 24.05.2013; in: "Abstracts 4th International Congress on Computational Engineering and Sciences", (2013), S. 1. | |
| 1316. | Illarionov, Yu., Vexler, M. I., Fedorov, V. V., Suturin, S. M., Isakov, D. V., Grekhov, I.: Optical characterization of the injection properties of MIS structures with thin CaF2 and HfO2/SiO2 insulating layers on Silicon Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 16.09.2013 - 20.09.2013; in: "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3; S. 229. | |
| 1315. | Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S.: Optimization of Spin-Transfer Torque Magnetic Tunnel Junction-Based Logic Gates Poster: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 244 - 245. | |
| 1314. | Narducci, D., Lorenzi, B., Tonini, R., Frabboni, S., Gazzadi, G., Ottaviani, G., Neophytou, N., Zianni, X.: Paradoxical Enhancement of the Power Factor in Polycrystalline Silicon Due to the Formation of Nanovoids Vortrag: European Conference on Thermoelectrics (ECT), Noordwijk, The Netherlands; 18.11.2013 - 20.11.2013; in: "Book of Abstracts", (2013), S. 52. | |
| 1313. | Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S.: Performance Analysis and Comparison of Two 1T/1MTJ-based Logic Gates Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 163 - 166. https://doi.org/10.1109/SISPAD.2013.6650600 | |
| 1312. | Moradinasab, M., Pourfath, M., Baumgartner, O., Kosina, H.: Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers Poster: The 12th International Conference on Intersubband Transitions in Quantum Wells (ITQW), New York, USA; 15.09.2013 - 20.09.2013. | |
| 1311. | Orio, R., Selberherr, S.: Physically Based Models of Electromigration Vortrag: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong (eingeladen); 03.06.2013 - 05.06.2013; in: "Proceedings of the International Conference on Electron Devices and Solid-State Circuits (EDSSC)", 290 (2013), S. 1 - 2. | |
| 1310. | Amoroso, S., Gerrer, L., Asenov, A., Sellier, J. M., Dimov, I., Nedjalkov, M., Selberherr, S.: Quantum Insights in Gate Oxide Charge-Trapping Dynamics in Nanoscale MOSFETs Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 25 - 28. https://doi.org/10.1109/SISPAD.2013.6650565 | |
| 1309. | Grasser, T., Rott, K., Reisinger, H., Waltl, M., Schanovsky, F., Gös, W., Kaczer, B.: Recent Advances in Understanding Oxide Traps in pMOS Transistors Vortrag: International Workshop on Dielectric Thin Films For Future Electron Devices: Science and Technology, Tokyo, Japan (eingeladen); 07.11.2013 - 09.11.2013; in: "Proceedings of 2013 IWDTF", (2013), ISBN: 978-4-86348-383-5; S. 95 - 96. | |
| 1308. | Osintsev, D., Sverdlov, V., Selberherr, S.: Reduction of Momentum and Spin Relaxation Rate in Strained Thin Silicon Films Vortrag: European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania; 16.09.2013 - 20.09.2013; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2013), ISBN: 978-1-4799-0649-9; S. 334 - 337. https://doi.org/10.1109/ESSDERC.2013.6818886 | |
| 1307. | Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, Ph. J., Groeseneken, G., Schwarz, B., Bina, M., Waltl, M., Wagner, P.-J., Grasser, T.: Reduction of the BTI Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), S. 1 - 6. | |
| 1306. | Osintsev, D., Sverdlov, V., Selberherr, S.: Reduction of the Surface Roughness Induced Spin Relaxation in SOI Structures: An Analytical Approach Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Paris, France; 21.01.2013 - 23.01.2013; in: "Conference Proceedings of the Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", 46 (2013), 1 S. | |
| 1305. | Franco, J., Kaczer, B., Roussel, P., Toledano-Luque, M., Weckx, P., Grasser, T.: Relevance of non-exponential single-defect-induced threshold voltage shifts for NBTI Variability Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; S. 69 - 72. | |
| 1304. | Kaczer, B., Chen, C., Watt, J., Chanda, K., Weckx, P., Toledano-Luque, M., Groeseneken, G., Grasser, T.: Reliability and Performance Considerations for NMOSFET Pass Gates in FPGA Applications Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; S. 94 - 97. | |
| 1303. | Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S.: Rigorous Simulation Study of a Novel Non-Volatile Magnetic Flip-Flop Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 368 - 371. https://doi.org/10.1109/SISPAD.2013.6650651 | |
| 1302. | Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S.: STT-MRAM-Based Reprogrammable Logic Gates for Large-Scale Non-Volatile Logic Integration Poster: International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey; 02.09.2013 - 06.09.2013; in: "Proceedings of the International Conference on Nanoscale Magnetism", (2013), S. 208. | |
| 1301. | Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S.: STT-MTJ-Based Implication Logic Circuits for Non-Volatile Logic-in-Memory Applications Vortrag: Symposium on CMOS Emerging Technologies, Whistler, BC, Canada (eingeladen); 17.07.2013 - 19.07.2013; in: "Book of Abstracts of the 2013 Symposium on CMOS Emerging Technologies (CMOS ET 2013)", (2013), ISBN: 978-1-927500-38-5; 1 S. | |
| 1300. | Osintsev, D., Sverdlov, V., Selberherr, S.: Shear Strain: An Efficient Spin Lifetime Booster in Advanced UTB2 SOI MOSFETs Vortrag: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; 08.04.2013 - 11.04.2013; in: "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4; S. 64 - 65. | |
| 1299. | Sverdlov, V., Selberherr, S.: Silicon Spintronics and its Applications Vortrag: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine (eingeladen); 08.04.2013 - 11.04.2013; in: "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4; S. 51 - 52. | |
| 1298. | Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S.: Simulation of Magnetic Oscillations in a System of two MTJs with a Shared Free Layer Poster: Soft Magnetic Materials Conference (SMM), Budapest, Hungary; 01.09.2013 - 04.09.2013; in: "Abstracts Book of The 21st International Conference on Soft Magnetic Materials", (2013), S. 101. | |
| 1297. | Moradinasab, M., Pourfath, M., Kosina, H.: Spin Filtering in Zigzag Graphene Nanoribbons Using 7-5 Defects Poster: Graphene Week, Chemnitz, Germany; 02.06.2013 - 07.06.2013; in: "Book of Abstracts", (2013), S. 250. | |
| 1296. | Ghosh, J., Windbacher, T., Sverdlov, V., Selberherr, S.: Spin Injection and Diffusion in Silicon Based Devices from a Space Charge Layer Vortrag: Annual Conference on Magnetism and Magnetic Materials, Denver, USA; 04.11.2013 - 08.11.2013; in: "Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM)", (2013), S. 713 - 714. | |
| 1295. | Osintsev, D., Sverdlov, V., Selberherr, S.: Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films Vortrag: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Toronto, Canada; 12.05.2013 - 16.05.2013; in: "223th ECS Meeting", 894 (2013), ISBN: 978-1-56677-866-4; S. 1. | |
| 1294. | Osintsev, D., Sverdlov, V., Selberherr, S.: Spin Lifetime Enhancement in Strained Thin Silicon Films Vortrag: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 08.12.2013 - 13.12.2013; in: "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2013), 2 S. | |
| 1293. | Schwaha, P., Nedjalkov, M., Selberherr, S., Dimov, I., Georgieva, R.: Stochastic Alternative to Newton's Acceleration Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 03.06.2013 - 07.06.2013; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2013), S. 77 - 78. | |
| 1292. | Singulani, A. P., Ceric, H., Selberherr, S.: Stress Estimation in Open Tungsten TSV Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 65 - 68. https://doi.org/10.1109/SISPAD.2013.6650575 | |
| 1291. | Singulani, A. P., Ceric, H., Selberherr, S.: "Stress Evolution in the Metal Layers of TSVs with Bosch Scallops"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, France; 30.09.2013 - 04.10.2013. | |
| 1290. | Singulani, A. P., Ceric, H., Langer, E.: Stress Evolution on Tungsten Thin-Film of an Open Through Silicon Via Technology Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in: "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5; S. 216 - 220. https://doi.org/10.1109/IPFA.2013.6599155 | |
| 1289. | Singulani, A. P., Ceric, H., Langer, E.: Stress reduction induced by Bosch scallops on an open TSV technology Poster: IEEE International Interconnect Technology Conference (IITC), Kyoto, Japan; 13.06.2013 - 15.06.2013; in: "Proceedings of the International Interconnect Techonology Conference (IITC)", (2013), ISBN: 978-1-4799-0438-9; S. 1 - 2. https://doi.org/10.1109/IITC.2013.6615578 | |
| 1288. | Makarov, A., Sverdlov, V., Selberherr, S.: Structural Optimization of MTJs with a Composite Free Layer Vortrag: SPIE Spintronics, San Diego, CA, USA (eingeladen); 25.08.2013 - 29.08.2013; in: "Proceedings of SPIE Spintronics", (2013), S. OP108-86. | |
| 1287. | Makarov, A., Sverdlov, V., Selberherr, S.: Structural Optimization of MTJs with a Composite Free Layer Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 74 - 75. | |
| 1286. | Stanojevic, Z., Kosina, H.: Surface-Roughness-Scattering in Non-Planar Channels - the Role of Band Anisotropy Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 352 - 355. https://doi.org/10.1109/SISPAD.2013.6650647 | |
| 1285. | Windbacher, T., Triebl, O., Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S.: Switching Optimization of an Electrically Read- and Writable Magnetic Logic Gate Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 238 - 239. | |
| 1284. | Sellier, J. M., Nedjalkov, M., Dimov, I., Selberherr, S.: The Role of Annihilation in a Wigner Monte Carlo Approach Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 03.06.2013 - 07.06.2013; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2013), S. 78. | |
| 1283. | Schwaha, P., Sellier, J. M., Nedjalkov, M., Dimov, I., Selberherr, S.: The Ultimate Equivalence Between Coherent Quantum and Classical Regimes Poster: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 152 - 153. | |
| 1282. | Karamitaheri, H., Neophytou, N., Kosina, H.: Thermal Conductivity of Si Nanowires Using Atomistic Phonon Dispersions Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 98 - 99. | |
| 1281. | Karamitaheri, H., Neophytou, N., Kosina, H.: Thermal Conductivity of Si Nanowires and Ultra Thin-Layers Using Atomistic Phonon Dispersions Vortrag: The 32nd International Conference on Thermoelectrics, Kobe, Japan; 30.06.2013 - 04.07.2013; in: "Book of Abstracts", (2013), 1 S. | |
| 1280. | Neophytou, N., Kosina, H.: Thermoelectric Power Factor Engineering of Low-Dimensional and Nanocomposite Si Nanostructures Vortrag: APS March Meeting, Baltimore, Maryland, USA; 18.03.2013 - 22.03.2013; in: "Bulletin American Physical Society (APS March Meeting)", (2013), 1 S. | |
| 1279. | Tillet, Ph., Rupp, K., Selberherr, S., Lin, C.: Towards Performance-Portable, Scalable, and Convenient Linear Algebra Vortrag: USENIX Workshop on Hot Topics in Parallelism, San Jose, CA, USA; 24.06.2013 - 25.06.2013; in: "Proceedings of 5th USENIX Workshop on Hot Topics in Parallelism", (2013), S. 1 - 8. | |
| 1278. | Kareva, G.G., Vexler, M. I., Illarionov, Yu.: Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling Diode Poster: International Conference on Insulating Films on Semiconductors (INFOS), Cracow, Poland; 25.06.2013 - 28.06.2013; in: "Book of Abstracts", (2013), ISBN: 978-83-7814-115-0; S. 246 - 247. | |
| 1277. | Makarov, A., Sverdlov, V., Selberherr, S.: Transverse Domain Wall Formation in a Free Layer: A Mechanism for Switching Failure in a MTJ-based STT-MRAM Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in: "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5; S. 267 - 270. https://doi.org/10.1109/IPFA.2013.6599165 | |
| 1276. | Vexler, M. I., Illarionov, Yu., Suturin, S. M., Fedorov, V. V., Sokolov, N. S.: Tunnel charge transport in Au/CaF2/Si(111) system Vortrag: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 16.09.2013 - 20.09.2013; in: "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3; S. 74. | |
| 1275. | Tyaginov, S. E., Osintsev, D., Illarionov, Yu., Park, J.M., Enichlmair, H., Vexler, M. I., Grasser, T.: Tunnelling of strongly non-equilibrium carriers in the transistors of traditional configuration Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 16.09.2013 - 20.09.2013; in: "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3; S. 441. | |
| 1274. | Sellier, J. M., Nedjalkov, M., Dimov, I., Selberherr, S.: Two-dimensional Transient Wigner Particle Model Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 404 - 407. https://doi.org/10.1109/SISPAD.2013.6650660 | |
| 1273. | Gös, W., Toledano-Luque, M., Baumgartner, O., Bina, M., Schanovsky, F., Kaczer, B., Grasser, T.: Understanding Correlated Drain and Gate Current Fluctuations Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, France (eingeladen); 30.09.2013 - 04.10.2013; in: "20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2013), S. 51 - 56. | |
| 1272. | Gös, W., Toledano-Luque, M., Baumgartner, O., Bina, M., Schanovsky, F., Kaczer, B., Grasser, T.: Understanding Correlated Drain and Gate Current Fluctuations Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in: "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5; S. 51 - 56. | |
| 1271. | Franco, J., Kaczer, B., Roussel, Ph. J., Mitard, J., Sioncke, S., Witters, L., Mertens, H., Grasser, T., Groeseneken, G.: Understanding the Suppressed Charge Trapping in Relaxed- and Strained Ge/SiO2/HfO2 pMOSFETs and Implications for the Screening of Alternative High-Mobility Substrate/Dielectric CMOS Gate Stacks Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 09.12.2013 - 11.12.2013; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2013), S. 397 - 400. https://doi.org/10.1109/IEDM.2013.6724634 | |
| 1270. | Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S.: Using Strain to Increase the Reliability of Scaled Spin MOSFETs Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in: "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5; S. 770 - 773. https://doi.org/10.1109/IPFA.2013.6599272 | |
| 1269. | Stanojevic, Z., Baumgartner, O., Schnass, K., Karner, M., Kosina, H.: VSP - a Quantum Simulator for Engineering Applications Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 132 - 133. | |
| 1268. | Rupp, K., Tillet, Ph., Rudolf, F., Weinbub, J.: ViennaCL - Portable High Performance at High Convenience Vortrag: The European Conference on Numerical Mathematics and Advanced Applications (ENUMATH), Lausanne, Switzerland (eingeladen); 26.08.2013 - 30.08.2013; in: "ENUMATH 2013 Proceedings", (2013), S. 1 - 2. | |
| 1267. | Rudolf, F., Rupp, K., Selberherr, S.: ViennaMesh - a Highly Flexible Meshing Framework Vortrag: International Congress on Computational Engineering and Sciences (FEMTEC), Las Vegas, USA; 20.05.2013 - 25.05.2013; in: "Abstracts 4th International Congress on Computational Engineering and Sciences", (2013), 1 S. | |
| 1266. | Wagner, M., Rupp, K., Weinbub, J.: A Comparison of Algebraic Multigrid Preconditioners using Graphics Processing Units and Multi-Core Central Processing Units Vortrag: High Performance Computing Symposium (HPC), Orlando, FL, USA; 26.03.2012 - 29.03.2012; in: "Proceedings of the High Performance Computing Symposium (HPC)", ACM, (2012), ISBN: 978-1-61839-788-1; 7 S. https://doi.org/10.5555/2338816.2338818 | |
| 1265. | Weinbub, J., Rupp, K., Selberherr, S.: A Flexible Execution Framework for High-Performance TCAD Applications Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 400 - 403. | |
| 1264. | Weinbub, J., Rupp, K., Selberherr, S.: A Generic Multi-Dimensional Run-Time Data Structure for High-Performance Scientific Computing Vortrag: World Congress on Engineering (WCE), London, UK; 04.07.2012 - 06.07.2012; in: "Proceedings of the World Congress on Engineering (WCE)", (2012), ISBN: 978-988-19252-1-3; S. 1076 - 1081. | |
| 1263. | Weinbub, J.: A Lightweight Task Graph Scheduler for Distributed High-Performance Scientific Computing Vortrag: Workshop on the State-of-the-Art in Scientific and Parallel Computing (PARA), Helsinki, Finland; 10.06.2012 - 13.06.2012; in: "Proceedings of the International Workshop on the State-of-the-Art in Scientific and Parallel Computing", (2012), 1 S. | |
| 1262. | Palankovski, V., Kuzmik, J.: A Promising New n++-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications Vortrag: Honolulu PRiME 2012, Honolulu, USA; 07.10.2012 - 12.10.2012; in: "ECS Meeting Abstracts", MA2012-02 (2012), Paper-Nr. 2551, 1 S. | |
| 1261. | Mahmoudi, H., Sverdlov, V., Selberherr, S.: A Robust and Efficient MTJ-based Spintronic IMP Gate for New Logic Circuits and Large-Scale Integration Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 225 - 228. | |
| 1260. | Semenov, A., Dedyk, A. I., Belavsky, P. Y., Pavlova, Yu. V., Karmanenko, S., Pakhomov, O., Starkov, A., Starkov, I.: A Study of Ferroelectric Multilayer Structures Based on BST Films Containing High Concentration of Magnetic Ions Poster: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 25.06.2012 - 27.06.2012; in: "Abstract Booklet", (2012), S. 77. | |
| 1259. | Nematian, H., Moradinasab, M., Noei, M., Pourfath, M., Fathipour, M., Kosina, H.: A Theoretical Study of BN-Confined Graphene Nanoribbon Based Resonant Tunneling Diodes Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 217 - 218. | |
| 1258. | Schwarz, B., Reininger, P., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G.: "A mid-infrared dual wavelenght quantum cascade structure designed for both emission and detection"; Poster: International Conference on Physics of Semiconductor (ICPS), Zürich, Schweiz; 29.07.2012 - 03.08.2012. | |
| 1257. | Stanojevic, Z., Baumgartner, O., Kosina, H.: A stable discretization method for "Dirac-like" effective Hamiltonians Poster: International Quantum Cascade Lasers School & Workshop 2012 (IQCLSW 2012), Baden near Vienna, Austria; 02.09.2012 - 06.09.2012; in: "Proc. International Quantum Cascade Lasers School & Workshop", (2012), S. 127. | |
| 1256. | Ceric, H., Orio, R., Zisser, W. H., Selberherr, S.: Ab Initio Method for Electromigration Analysis Vortrag: IEEE Electronics Packaging Technology Conference (EPTC), Singapore; 02.07.2012 - 06.07.2012; in: "Proceedings of the 19th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0982-0; 4 S. https://doi.org/10.1109/IPFA.2012.6306306 | |
| 1255. | Starkov, A., Pakhomov, O., Starkov, I.: Account for Mutual Influence of Electrical, Elastic and Thermal Phenomena for Ferroelectric Domain Wall Modeling Poster: 11th International Symposium on Ferroic Domains and Micro- to Nanoscopic Structures (ISFD), Ekaterinburg, Russia; 20.08.2012 - 24.08.2012; in: "Abstract Book", (2012), S. 238. | |
| 1254. | Waltl, M., Wagner, P.-J., Reisinger, H., Rott, K., Grasser, T.: Advanced Data Analysis Algorithms for the Time-Dependent Defect Spectroscopy of NBTI Vortrag: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in: "IEEE International Integrated Reliability Workshop Final Report", (2012), S. 74 - 79. | |
| 1253. | Tillet, Ph., Rupp, K., Selberherr, S.: An Automatic OpenCL Compute Kernel Generator for Basic Linear Algebra Operations Vortrag: High Performance Computing Symposium (HPC), Orlando, FL, USA; 26.03.2012 - 29.03.2012; in: "HPC '12 Proceedings of the 2012 Symposium on High Performance Computing", ACM, (2012), ISBN: 978-1-61839-788-1; 7 S. | |
| 1252. | Orio, R., Ceric, H., Selberherr, S.: Analysis of Resistance Change Development due to Voiding in Copper Interconnects ended by a Through Silicon Via Vortrag: International Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil; 30.08.2012 - 02.09.2012; in: "ECS Transactions", 49, 1 (2012), ISBN: 978-1-56677-990-6; S. 273 - 280. https://doi.org/10.1149/04901.0273ecst | |
| 1251. | Starkov, I., Enichlmair, H., Tyaginov, S. E., Grasser, T.: Analysis of the Threshold Voltage Turn-Around Effect in High-Voltage n-MOSFETs Due to Hot-Carrier Stress Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 S. | |
| 1250. | Neophytou, N., Karamitaheri, H., Kosina, H.: Atomistic Design of Ultra-Narrow Silicon Nanowires for Improved Electronic and Thermoelectric Applications Vortrag: International Conference on Nanosciences and Nanotechnologies, Thessaloniki, Greece; 03.07.2012 - 06.07.2012; in: "Abstract Book", (2012), S. 46. | |
| 1249. | Ceric, H., Orio, R., Selberherr, S.: Atomistic Method for Analysis of Electromigration Poster: IEEE International Interconnect Technology Conference (IITC), San Jose, USA; 04.06.2012 - 06.06.2012; in: "Proceedings of the IEEE International Interconnect Technology Conference", (2012), ISBN: 978-1-4673-1137-3; 3 S. | |
| 1248. | Neophytou, N., Kosina, H.: Atomistic Simulations of the Electronic Properties of Si and Ge Nanowires and Thin-Layers: Bandstructure Effects Vortrag: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China (eingeladen); 26.10.2012 - 28.10.2012; in: "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), S. 488. | |
| 1247. | Rupp, K., Jungemann, C., Bina, M., Jüngel, A., Grasser, T.: Bipolar Spherical Harmonics Expansions of the Boltzmann Transport Equation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 19 - 22. | |
| 1246. | Karamitaheri, H., Neophytou, N., Kosina, H.: Calculations of Confined Phonon Spectrum in Narrow Si Nanowires using the Valence Force Field Method Poster: The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark; 09.07.2012 - 12.07.2012; in: "Book of Abstracts", (2012), 1 S. | |
| 1245. | Molnar, M., Donnarumma, G., Palankovski, V., Kuzmik, J., Donoval, D., Kovac, J., Selberherr, S.: Characterization, Modeling and Simulation of In0.12Al0.88N/GaN HEMTs Vortrag: Applied Physics of Condensed Matter (APCOM), High Tatras, Slovakia; 20.06.2012 - 22.06.2012; in: "Proceedings of the 18th International Conference in the Series of the Solid State Workshops", (2012), S. 190 - 194. | |
| 1244. | Starkov, I., Enichlmair, H., Tyaginov, S. E., Grasser, T.: Charge-Pumping Extraction Techniques for Hot-Carrier Induced Interface and Oxide Trap Spatial Distributions in MOSFETs Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 02.07.2012 - 06.07.2012; in: "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6; S. 1 - 6. https://doi.org/10.1109/IPFA.2012.6306266 | |
| 1243. | Toledano-Luque, M., Kaczer, B., Simoen, E., Degraeve, R., Franco, J., Roussel, Ph. J., Grasser, T., Groeseneken, G.: Correlation of Single Trapping and Detrapping Effects in Drain and Gate Currents of Nanoscaled nFETs and pFETs Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 S. | |
| 1242. | Palankovski, V., Kuzmik, J.: Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation Vortrag: Honolulu PRiME 2012, Honolulu, USA; 07.10.2012 - 12.10.2012; in: "ECS Meeting Abstracts", MA2012-02 (2012), Paper-Nr. 2543, 1 S. | |
| 1241. | Weinbub, J.: Distributed High-Performance Parallel Mesh Generation with ViennaMesh Vortrag: Workshop on the State-of-the-Art in Scientific and Parallel Computing (PARA), Helsinki, Finland; 10.06.2012 - 13.06.2012; in: "Proceedings of the International Workshop on the State-of-the-Art in Scientific and Parallel Computing", (2012), 1 S. | |
| 1240. | Starkov, A., Starkov, I.: Domain-Wall Motion for Slowly Varying Electric Field Vortrag: 11th International Symposium on Ferroic Domains and Micro- to Nanoscopic Structures (ISFD), Ekaterinburg, Russia; 20.08.2012 - 24.08.2012; in: "Abstract Book", (2012), S. 93. | |
| 1239. | Schwarz, B., Reininger, P., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G.: "Dual-color quantum cascade structure for coherent emission and detection"; Poster: International Quantum Cascade Lasers School & Workshop 2012 (IQCLSW 2012), Baden; 02.09.2012 - 06.09.2012. | |
| 1238. | Moradinasab, M., Nematian, H., Noei, M., Pourfath, M., Fathipour, M., Kosina, H.: Edge Roughness Effects on the Optical Properties of Zigzag Graphene Nanoribbons: A First Principles Study Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 249 - 250. | |
| 1237. | Filipovic, L., Selberherr, S.: Electric Field Based Simulations of Local Oxidation Nanolithography using Atomic Force Microscopy in a Level Set Environment Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil; 30.08.2012 - 02.09.2012; in: "ECS Transactions", 49, 1 (2012), ISBN: 978-1-56677-990-6; S. 265 - 272. https://doi.org/10.1149/04901.0265ecst | |
| 1236. | Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S.: Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors Vortrag: 24th European Modeling and Simulation Symposium (EMSS2012), Vienna, Austria; 19.09.2012 - 21.09.2012; in: "Proceedings of the 24th European Modeling and Simulation Symposium", (2012), ISBN: 978-88-97999-01-0; S. 156 - 162. | |
| 1235. | Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S.: Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 153 - 156. | |
| 1234. | Orio, R., Ceric, H., Selberherr, S.: Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via Poster: 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Cagliari, Italy; 01.10.2012 - 05.10.2012; in: "Proceedings of the 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2012), S. 1981 - 1986. | |
| 1233. | Molnar, M., Donnarumma, G., Palankovski, V., Kuzmik, J., Donoval, D., Kovac, J., Selberherr, S.: Electrothermal Analysis of In0.12Al0.88N/GaN HEMTs Vortrag: International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), Smolenice, Slovakia; 11.11.2012 - 15.11.2012; in: "Proceedings of the 9th International ASDAM", (2012), ISBN: 978-1-4673-1195-3; S. 55 - 58. https://doi.org/10.1109/ASDAM.2012.6418556 | |
| 1232. | Makarov, A., Selberherr, S., Sverdlov, V.: Emerging Non-Volatile Memories for Ultra-Low Power Applications Vortrag: Informationstagung Mikroelektronik (ME), Vienna, Austria (eingeladen); 23.04.2012 - 24.04.2012; in: "Tagungsband zur Informationstagung Mikroelektronik 12", (2012), ISBN: 978-3-85133-071-7; S. 21 - 24. | |
| 1231. | Karamitaheri, H., Neophytou, N., Pourfath, M., Kosina, H.: Engineering the Thermoelectric Power Factor of Metallic Graphene Nanoribbons Vortrag: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 77 - 78. | |
| 1230. | Neophytou, N., Karamitaheri, H., Kosina, H.: Engineering the Thermoelectric Power Factor of Si and Ge Ultra Narrow 1D Nanowires and 2D Thin Layers Using Atomistic Modeling Vortrag: The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark; 09.07.2012 - 12.07.2012; in: "Book of Abstracts", (2012), 1 S. | |
| 1229. | Aichinger, T., Lenahan, P., Grasser, T., Pobegen, G., Nelhiebel, M.: Evidence for Pb Center-Hydrogen Complexes after Subjecting PMOS Devices to NBTI Stress - a Combined DCIV/SDR Study Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 S. | |
| 1228. | Sverdlov, V., Makarov, A., Selberherr, S.: Fast Switching in MTJs with a Composite Free Layer Vortrag: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China; 26.10.2012 - 28.10.2012; in: "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), S. 291. | |
| 1227. | Orio, R., Selberherr, S.: Formation and Movement of Voids in Copper Interconnect Structures Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Xi'an, China (eingeladen); 29.10.2012 - 01.11.2012; in: "Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2012), ISBN: 978-1-4673-2475-5; S. 378 - 381. https://doi.org/10.1109/ICSICT.2012.6467675 | |
| 1226. | Windbacher, T., Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S.: Fully Electrically Read- Write Magneto Logic Gates Vortrag: The 5th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMS, Crete, Greece; 07.10.2012 - 10.10.2012; in: "Book of Abstracts", (2012), 1 S. | |
| 1225. | Jurkovic, M., Gregusova, D., Hascik, S., Blaho, M., Molnar, M., Palankovski, V., Donoval, D., Carlin, J., Grandjean, N., Kuzmik, J.: GaN/InAlN/AlN/GaN Normally-Off HEMT with Etched Access Region Vortrag: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France; 30.05.2012 - 01.06.2012; in: "Proceedings of the 36th Workshop on Compound Semiconductor Devices and Integrated Circuits", (2012), 2 S. | |
| 1224. | Neophytou, N., Kosina, H.: Gate Field Induced Bandstructure and Mobility Variations in p-type Silicon Nanowires Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Montpellier, France; 23.01.2012 - 25.01.2012; in: "Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2012), S. 131 - 132. | |
| 1223. | Makarov, A., Sverdlov, V., Selberherr, S.: Geometry Dependence of the Switching Time in MTJs with a Composite Free Layer Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona (eingeladen); 02.12.2012 - 07.12.2012; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2012), ISBN: 978-3-901578-25-0; S. 21. | |
| 1222. | Selberherr, S.: Giving Silicon a Spin Vortrag: International Conference on Enabling Science and Nanotechnology, Johor Bahru, Malaysia (eingeladen); 05.01.2012 - 07.01.2012; in: "Abstracts International Conference on Enabling Science and Nanotechnology (ESciNano 2012)", (2012), 1 S. | |
| 1221. | Makarov, A., Sverdlov, V., Selberherr, S.: High Thermal Stability and Low Switching Energy Barrier in Spin-transfer Torque RAM with Composite Free Layer Poster: International Conference on Solid State Devices and Materials, Kyoto, Japan; 25.09.2012 - 27.09.2012; in: "Extended Abstracts of 2012 International Conference on Solid State Devices and Materials", (2012), 2 S. | |
| 1220. | Rupp, K., Weinbub, J., Rudolf, F.: Highly Productive Application Development with ViennaCL for Accelerators Poster: AGU Fall Meeting, San Francisco, USA (eingeladen); 03.12.2012 - 07.12.2012. | |
| 1219. | Karamitaheri, H., Pourfath, M., Kosina, H.: Highly Sensitive Graphene Antidot Lattice Chemiresitor Sensor Poster: Graphene Week, Delft, Netherlands; 04.06.2012 - 08.06.2012; in: "Book of Abstracts", (2012), 1 S. | |
| 1218. | Rott, K., Schmitt-Landsiedel, D., Reisinger, H., Rott, G.A., Georgakos, G., Schluender, C., Aresu, S., Gustin, W., Grasser, T.: Impact and measurement of short term threshold instabilities in MOSFETs of analog circuits Vortrag: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in: "IEEE International Integrated Reliability Workshop Final Report", (2012), S. 31 - 34. | |
| 1217. | Tyaginov, S. E., Starkov, I., Triebl, O., Karner, M., Kernstock, C., Jungemann, C., Enichlmair, H., Park, J.M., Grasser, T.: Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 02.07.2012 - 06.07.2012; in: "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6; S. 1 - 5. https://doi.org/10.1109/IPFA.2012.6306265 | |
| 1216. | Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, Ph. J., Mitard, J., Ragnarsson, L., Witters, L., Chiarella, T., Togo, M., Horiguchi, N., Groeseneken, G., Bukhori, M. F., Grasser, T., Asenov, A.: Impact of Single Charged Gate Oxide Defects on the Performance and Scaling of Nanoscaled FETs Vortrag: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 S. | |
| 1215. | Rupp, K., Lagger, P., Grasser, T.: Inclusion of Carrier-Carrier-Scattering Into Arbitrary-Order Spherical Harmonics Expansions of the Boltzmann Transport Equation Vortrag: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 109 - 110. | |
| 1214. | Donnarumma, G., Palankovski, V., Selberherr, S.: Influence of Bandgap Narrowing and Carrier Lifetimes on the Forward Current-Voltage Characteristics of a 4H-SiC p-i-n Diode Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 125 - 128. | |
| 1213. | Mahmoudi, H., Sverdlov, V., Selberherr, S.: Influence of Geometry on Memristive Behavior of the Domain Wall Spintronic Memristors and its Applications for Measurements Poster: International Conference on Superconductivity and Magnetism, Istanbul, Turkey; 29.04.2012 - 04.05.2012; in: "Proceedings of International Conference on Superconductivity and Magnetism (ICSM 2012)", (2012), 1 S. | |
| 1212. | Axelevitch, A., Palankovski, V., Selberherr, S., Golan, G.: "Large Silicon Solar Cells of a Lateral Type"; Poster: 2nd International Conference on Crystalline Silicon Photovoltaics (Silicon PV 2012), Leuven, Belgium; 03.04.2012 - 05.04.2012. | |
| 1211. | Starkov, I., Enichlmair, H., Grasser, T.: Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in High-Voltage n-MOSFET Vortrag: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 25.06.2012 - 27.06.2012; in: "Abstract Booklet", (2012), S. 40. | |
| 1210. | Kosina, H., Neophytou, N.: Low Dimensional Nanostructures as Efficient Thermoelectric Materials for Energy Conversion and Generation Vortrag: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China (eingeladen); 26.10.2012 - 28.10.2012; in: "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), S. 419. | |
| 1209. | Sverdlov, V., Selberherr, S.: MOSFET and Spin Transistor Simulations Vortrag: 2012 CMOS Emerging Technologies, Vancouver, BC Canada (eingeladen); 18.07.2012 - 21.07.2012; in: "Abstract of 2012 CMOS Emerging Technologies", (2012), 1 S. | |
| 1208. | Mahmoudi, H., Sverdlov, V., Selberherr, S.: MTJ-based Implication Logic Gates and Circuit Architecture for Large-Scale Spintronic Stateful Logic Systems Vortrag: European Solid-State Device Research Conference (ESSDERC), Bordeaux, France; 17.09.2012 - 21.09.2012; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2012), ISBN: 978-1-4673-3086-2; S. 254 - 257. https://doi.org/10.1109/ESSDERC.2012.6343381 | |
| 1207. | Makarov, A., Sverdlov, V., Selberherr, S.: Micromagnetic Simulations of an MTJ with a Composite Free Layer for High-Speed Spin Transfer Torque RAM Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 225 - 226. | |
| 1206. | Makarov, A., Sverdlov, V., Selberherr, S.: Modeling Emerging Non-Volatile Memories: Current Trends and Challenges Vortrag: International Conference on Solid State Devices and Materials Science (SSDMS), Macao, China; 01.04.2012 - 02.04.2012; in: "Physics Procedia", (2012), S. 99 - 104. https://doi.org/10.1016/j.phpro.2012.03.056 | |
| 1205. | Osintsev, D., Sverdlov, V., Selberherr, S.: Modeling Spintronic Effects in Silicon Vortrag: International Workshop on Mathematics for Semiconductor Heterostructures (MSH), Berlin, Germany (eingeladen); 24.09.2012 - 28.09.2012; in: "Abstracts International Workshop on Mathematics for Semiconductor Heterostructures (MSH)", (2012), 3 S. | |
| 1204. | Orio, R., Ceric, H., Selberherr, S.: Modeling of Electromigration Induced Resistance Change in Three-Dimensional Interconnects with Through Silicon Vias Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 268 - 271. | |
| 1203. | Bina, M., Rupp, K., Tyaginov, S. E., Triebl, O., Grasser, T.: Modeling of Hot Carrier Degradation Using a Spherical Harmonics Expansion of the Bipolar Boltzmann Transport Equation Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 10.12.2012 - 12.12.2012; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2012), S. 713 - 716. https://doi.org/10.1109/IEDM.2012.6479138 | |
| 1202. | Tyaginov, S. E., Grasser, T.: Modeling of Hot-Carrier Degradation: Physics and Controversial Issues Vortrag: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in: "IEEE International Integrated Reliability Workshop Final Report", (2012), S. 206 - 215. | |
| 1201. | Ceric, H., Orio, R., Zisser, W. H., Schnitzer, V., Selberherr, S.: Modeling of Microstructural Effects on Electromigration Failure Vortrag: International Workshop on Stress-Induced Phenomena in Microelectronics, Kyoto, Japan (eingeladen); 28.05.2012 - 30.05.2012; in: "Abstracts of 12th International Workshop on Stress-Induced Phenomena in Microelectronics", (2012), S. 50 - 51. | |
| 1200. | Grasser, T., Kaczer, B., Reisinger, H., Wagner, P.-J., Toledano-Luque, M.: Modeling of the bias temperature instability under dynamic stress and recovery conditions Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Xi'an, China (eingeladen); 29.10.2012 - 01.11.2012; in: "11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2012), ISBN: 978-1-4673-2474-8; S. 1 - 4. https://doi.org/10.1109/ICSICT.2012.6466737 | |
| 1199. | Zianni, X., Neophytou, N., Ferri, M., Roncaglia, A., Narducci, D.: Nanograin Effects on the Thermoelectric Properties of Poly-Si Nanowiress Vortrag: The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark; 09.07.2012 - 12.07.2012; in: "Book of Abstracts", (2012), 1 S. | |
| 1198. | Makarov, A., Sverdlov, V., Selberherr, S.: New Trends in Microelectronics: Towards an Ultimate Memory Concept Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen, Mexico (eingeladen); 14.03.2012 - 17.03.2012; in: "Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems", (2012), ISBN:978-1-4566-1117-6; 2 S. https://doi.org/10.1109/ICCDCS.2012.6188887 | |
| 1197. | Serrano-Lopez, I., Garcia-Barrientos, A., Palankovski, V., del Carmen Cruz-Netro, L.: Non-Stationary Effects of Space Charge in InN Films Vortrag: International Materials Research Congress, Cancun, Mexico; 12.08.2012 - 17.08.2012; in: "XXI International Materials Research Congress", (2012), 1 S. | |
| 1196. | Mahmoudi, H., Sverdlov, V., Selberherr, S.: Novel Memristive Charge- and Flux-Based Sensors Vortrag: The 8th Conference on Ph.D. Research in Microelectronics & Electronics- PRIME 2012, Aachen, Germany; 12.06.2012 - 15.06.2012; in: "Proceedings of the 8th Conference on Ph.D. Research in Microelectronics & Electronics", (2012), ISBN: 978-3-8007-3442-9; 4 S. | |
| 1195. | Wagner, P.-J., Kaczer, B., Scholten, A., Reisinger, H., Bychikhin, S., Pogany, D., Vandamme, L.K.J., Grasser, T.: On the Correlation Between NBTI, SILC, and Flicker Noise Vortrag: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in: "IEEE International Integrated Reliability Workshop Final Report", (2012), S. 60 - 64. | |
| 1194. | Grasser, T., Kaczer, B., Reisinger, H., Wagner, P.-J., Toledano-Luque, M.: On the Frequency Dependence of the Bias Temperature Instability Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 S. | |
| 1193. | Schanovsky, F., Grasser, T.: On the Microscopic Limit of the Modified Reaction-Diffusion Model for the Negative Bias Temperature Instability Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 S. | |
| 1192. | Grasser, T., Reisinger, H., Rott, K., Toledano-Luque, M., Kaczer, B.: On the Microscopic Origin of the Frequency Dependence of Hole Trapping in pMOSFETs Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 10.12.2012 - 12.12.2012; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2012), S. 470 - 473. https://doi.org/10.1109/IEDM.2012.6479076 | |
| 1191. | Moradinasab, M., Karamitaheri, H., Pourfath, M., Kosina, H.: On the Role of Stone-Wales Defects on the Performance of Graphene Nanoribbon Photo Detectors Poster: Graphene Week, Delft, Netherlands; 04.06.2012 - 08.06.2012; in: "Book of Abstracts", (2012), 1 S. | |
| 1190. | Schwaha, P., Nedjalkov, M., Selberherr, S., Dimov, I.: Particle-Grid Techniques for Semiclassical and Quantum Transport Simulations Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 177 - 178. | |
| 1189. | Nedjalkov, M., Schwaha, P., Selberherr, S., Ferry, D.K.: Phonon Decoherence in Wigner-Boltzmann Transport Poster: International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 12.02.2012 - 17.02.2012; in: "Proceedings of International Winterschool on New Developments in Solid State Physics", (2012), S. 61 - 62. | |
| 1188. | Jurkovic, M., Gregusova, D., Hascik, S., Blaho, M., Cico, K., Palankovski, V., Carlin, J., Grandjean, N., Kuzmik, J.: Polarization Engineered Normally-Off GaN/InlN/AlN/GaN HEMT Vortrag: International Workshop on Nitride Semiconductors 2012 (INW), Sapporo, Japan; 14.10.2012 - 19.10.2012; in: "International Workshop on Nitride Semiconductors", (2012), 2 S. | |
| 1187. | Starkov, A., Baranov, I., Pakhomov, O., Starkov, I., Zaitsev, A.: Principles of Solid-State Cooler on Layered Multiferroics Poster: 5th IIR/IIF International Conference on Magnetic Refrigeration at Room Temperature (THERMAG V), Grenoble, France; 17.09.2012 - 20.09.2012; in: "Conference guide & book of abstracts", (2012), 1 S. | |
| 1186. | Makarov, A., Sverdlov, V., Selberherr, S.: Recent Developments in Advanced Memory Modeling Vortrag: International Conference on Microelectronics (MIEL), Nis, Serbia (eingeladen); 13.05.2012 - 16.05.2012; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2012), ISBN: 978-1-4673-0235-7; S. 49 - 52. https://doi.org/10.1109/MIEL.2012.6222795 | |
| 1185. | Grasser, T.: Recent Developments in Understanding the Bias Temperature Instability Vortrag: International Conference on Microelectronics (MIEL), Nis, Serbia (eingeladen); 13.05.2012 - 16.05.2012; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2012), ISBN: 978-1-4673-0238-8; S. 315 - 322. https://doi.org/10.1109/MIEL.2012.6222864 | |
| 1184. | Pobegen, G., Nelhiebel, M., Grasser, T.: Recent Results Concerning the Influence of Hydrogen on the Bias Temperature Instability Vortrag: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in: "2012 IEEE International Integrated Reliability Workshop Final Report", (2012), S. 54 - 59. | |
| 1183. | Rupp, K., Grasser, T., Jüngel, A.: Recent advances in the spherical harmonics expansion of the Boltzmann transport equation Vortrag: Congresso Nationale Simai 2012, Turin, Italy; 25.06.2012 - 28.06.2012; in: "Abstracts of Congresso Nationale Simai 2012", (2012), S. 183. | |
| 1182. | Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S.: Reduction of Surface Roughness Induced Spin Relaxation in MOSFETs by Strain Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 229 - 230. | |
| 1181. | Makarov, A., Sverdlov, V., Selberherr, S.: Reduction of the Switching Current in Spin Transfer Torque Random Access Memory Poster: Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents, Corsica, France; 25.06.2012 - 29.06.2012; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents", (2012), S. 49. | |
| 1180. | Franco, J., Kaczer, B., Mitard, J., Toledano-Luque, M., Eneman, G., Roussel, Ph. J., Cho, M., Kauerauf, T., Grasser, T., Witters, L., Hellings, G., Ragnarsson, L., Horiguchi, N., Heyns, M., Groeseneken, G.: Reliability of SiGe Channel MOS Vortrag: Honolulu PRiME 2012, Honolulu, USA; 07.10.2012 - 12.10.2012; in: "ECS Meeting Abstracts", MA2012-02 (2012), Paper-Nr. 3119, 1 S. | |
| 1179. | Nedjalkov, M., Schwaha, P., Selberherr, S., Ferry, D.K., Vasileska, D., Dollfus, P., Querlioz, D.: Role of the Physical Scales on the Transport Regime Vortrag: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 47 - 48. | |
| 1178. | Makarov, A., Sverdlov, V., Selberherr, S.: STT-RAM with a Composite Free Layer: High Thermal Stability, Low Switching Barrier, and Sharp Switching Time Distribution Vortrag: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 23.07.2012 - 25.07.2012; in: "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), S. H4. | |
| 1177. | Reininger, P., Schwarz, B., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G.: "Simulation of Dual Wavelength Photonic Crystal Quantum Cascade Laser"; Poster: International Conference on Physics of Semiconductor (ICPS), Zürich, Schweiz; 29.07.2012 - 03.08.2012. | |
| 1176. | Bina, M., Triebl, O., Schwarz, B., Karner, M., Kaczer, B., Grasser, T.: Simulation of Reliability on Nanoscale Devices Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 109 - 112. | |
| 1175. | Filipovic, L., Selberherr, S.: Simulation of Silicon Nanopatterning Using nc-AFM Poster: International Conference on non-contact Atomic Force Microscopy, Cesky Krumlov; 01.07.2012 - 05.07.2012; in: "Abstracts 15th International Conference on non-contact Atomic Force Microscopy (nc-AFM)", (2012), S. 108. | |
| 1174. | Reininger, P., Schwarz, B., Kalchmair, S., Gansch, R., Baumgartner, O., Stanojevic, Z., Kosina, H., Schrenk, W., Strasser, G.: "Simulation of a dual wavelength quantum cascade laser in a photonic crystal cavity"; Poster: International Quantum Cascade Lasers School & Workshop 2012 (IQCLSW 2012), Baden; 02.09.2012 - 06.09.2012. | |
| 1173. | Filipovic, L., Selberherr, S.: Simulations of Local Oxidation Nanolithography by AFM Based on the Generated Electric Field Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 189 - 192. | |
| 1172. | Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S.: Simulations of an Electrical Read-Write Operation of a Magnetic XOR Gate Vortrag: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 23.07.2012 - 25.07.2012; in: "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), S. J3. | |
| 1171. | Lukash, M., Rupp, K., Selberherr, S.: Sparse Approximate Inverse Preconditioners for Iterative Solvers on GPUs Vortrag: High Performance Computing Symposium (HPC), Orlando, FL, USA; 26.03.2012 - 29.03.2012; in: "HPC '12 Proceedings of the 2012 Symposium on High Performance Computing", (2012), ISBN: 978-1-61839-788-1; 7 S. | |
| 1170. | Mahmoudi, H., Sverdlov, V., Selberherr, S.: Spintronic Stateful Logic Gates using Magnetic Tunnel Junctions Written by Spin-Transfer Torque Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 05.08.2012 - 08.08.2012; in: "Book of Abstracts", (2012), S. P-6. | |
| 1169. | Mahmoudi, H., Sverdlov, V., Selberherr, S.: State Drift Optimization of Memristive Stateful IMP Logic Gates Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 243 - 244. | |
| 1168. | Osintsev, D., Stanojevic, Z., Baumgartner, O., Sverdlov, V., Selberherr, S.: Strain-Induced Reduction of Surface Roughness Dominated Spin Relaxation in MOSFETs Poster: International Conference on Physics of Semiconductor (ICPS), Zurich, Switzerland; 29.07.2012 - 03.08.2012; in: "31st International Conference on the Physics of Semiconductors (ICPS 2012)", 1566 (2012), ISBN: 978-0-7354-1194-4; 1 S. https://doi.org/10.1063/1.4848413 | |
| 1167. | Makarov, A., Sverdlov, V., Selberherr, S.: Study of Self-Accelerating Switching in MTJs with Composite Free Layer by Micromagnetic Simulations Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 229 - 232. | |
| 1166. | Franco, J., Kaczer, B., Mitard, J., Toledano-Luque, M., Crupi, F., Eneman, G., Roussel, Ph. J., Grasser, T., Cho, M., Kauerauf, T., Witters, L., Hellings, G., Ragnarsson, L., Horiguchi, N., Heyns, M., Groeseneken, G.: Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications Vortrag: IEEE International Conference on IC Design and Technology (ICICDT), Austin, TX, USA (eingeladen); 30.05.2012 - 01.06.2012; in: "Proceedings of IEEE International Conference on IC Design and Technology", (2012), S. 1 - 4. | |
| 1165. | Osintsev, D., Sverdlov, V., Selberherr, S.: Surface Roughness Induced Reduction of Spin Relaxation in Thin Silicon Films Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona (eingeladen); 02.12.2012 - 07.12.2012; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)S)", (2012), ISBN: 978-3-901578-25-0; S. 33. | |
| 1164. | Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S.: Surface Roughness Induced Spin Scattering and Relaxation in Silicon SOI MOSFETs Vortrag: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 23.07.2012 - 25.07.2012; in: "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), S. B3. | |
| 1163. | Sverdlov, V., Makarov, A., Selberherr, S.: Switching Energy Barrier and Current Reduction in MTJs with Composite Free Layer Vortrag: APS March Meeting, Boston, USA; 27.02.2012 - 02.03.2012; in: "Bulletin American Physical Society (APS March Meeting 2012)", (2012), 1 S. | |
| 1162. | Cervenka, J., Steinmair, A., Park, J.M., Seebacher, E., Grasser, T.: TCAD Simulations of Statistical Process Variations for High-Voltage LDMOS Transistors Vortrag: European Workshop on CMOS Variability, Nice, France; 11.06.2012 - 12.06.2012; in: "Proceedings of the 3rd European Workshop on CMOS Variability", (2012), ISBN: 978-2-914561-56-3; 4 S. | |
| 1161. | Ceric, H., Orio, R., Selberherr, S.: TCAD Study of Electromigration Failure Modes in Sn-Based Solder Bumps Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 264 - 267. | |
| 1160. | Rupp, K.: The High-Level Linear Algebra Library ViennaCL and Its Applications Vortrag: GPU Technology Conference, San Jose, California, USA; 14.05.2012 - 17.05.2012; in: "Abstracts of GPU Technology Conference", (2012), S. 77. | |
| 1159. | Dedyk, A. I., Pavlova, Yu. V., Semenov, A., Pakhomov, O., Starkov, A., Starkov, I., Beliavskiy, P. Yu.: The Influence of "Heating-Cooling" Process Rate on Temperature Hysteresis of Ferroelectric Capasitor Structures Poster: 21st International Symposium on Applications of Ferroelectrics (ISAF), Aveiro, Portugal; 09.07.2012 - 13.07.2012; in: "Proceedings of 21st International Symposium on Applications of Ferroelectrics (ISAF)", (2012), ISBN: 978-1-4673-2668-1; 1 S. https://doi.org/10.1109/ISAF.2012.6297838 | |
| 1158. | Kaczer, B., Franco, J., Toledano-Luque, M., Roussel, Ph. J., Bukhori, M. F., Asenov, A., Schwarz, B., Bina, M., Grasser, T., Groeseneken, G.: The Relevance of Deeply-Scaled FET Threshold Voltage Shifts for Operation Lifetimes Vortrag: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 S. | |
| 1157. | Starkov, A., Starkov, I.: Theoretical Model of SPM-tip Electrostatic Field Accounting for Dead Layer and Domain Wall Vortrag: 21st International Symposium on Applications of Ferroelectrics (ISAF), Aveiro, Portugal; 09.07.2012 - 13.07.2012; in: "Proceedings of 21st International Symposium on Applications of Ferroelectrics (ISAF)", (2012), ISBN: 978-1-4673-2668-1; 1 S. https://doi.org/10.1109/ISAF.2012.6297837 | |
| 1156. | Moradinasab, M., Nematian, H., Pourfath, M., Fathipour, M., Kosina, H.: Theoretical Study of Single and Bilayer Graphene Nanoribbons Photodetectors Vortrag: Meeting of the Electrochemical Society (ECS), Seattle, Washington, USA; 06.05.2012 - 10.05.2012; in: "ECS Meeting", (2012), 1 S. | |
| 1155. | Karamitaheri, H., Pourfath, M., Neophytou, N., Kosina, H.: Theoretical Study of a Zigzag Graphene Nanoribbon Field Effect Transistor Vortrag: Meeting of the Electrochemical Society (ECS), Honolulu, USA; 07.10.2012 - 12.10.2012; in: "ECS Meeting", (2012), 1 S. | |
| 1154. | Singulani, A. P., Ceric, H., Selberherr, S.: Thermo-mechanical Simulations of an Open Tungsten TSV Vortrag: IEEE Electronics Packaging Technology Conference (EPTC), Singapore; 05.12.2012 - 07.12.2012; in: "Proceedings of the IEEE 14th Electronics Packaging Technology Conference (EPTC)", (2012), ISBN: 978-1-4673-4551-4; S. 110 - 114. https://doi.org/10.1109/EPTC.2012.6507061 | |
| 1153. | Starkov, A., Pakhomov, O., Starkov, I.: Thermodynamic Foundations of Solid-State Cooler Based on Multiferroic Materials Poster: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 25.06.2012 - 27.06.2012; in: "Abstract Booklet", (2012), S. 76. | |
| 1152. | Neophytou, N., Kosina, H.: Thermoelectric Power Factor of Ultra-Narrow Silicon Nanowires Vortrag: International Workshop on Computational Electronics (IWCE), Madison, WI, USA (eingeladen); 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 67 - 68. | |
| 1151. | Neophytou, N., Kosina, H.: Thermoelectric Properties of Low-Dimensional Si and Ge Based Nanostructures Vortrag: APS March Meeting, Boston, USA; 27.02.2012 - 02.03.2012; in: "Bulletin American Physical Society (APS March Meeting 2012)", (2012), 1 S. | |
| 1150. | Weinbub, J., Rupp, K., Filipovic, L., Makarov, A., Selberherr, S.: Towards a Free Open Source Process and Device Simulation Framework Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 141 - 142. | |
| 1149. | Osintsev, D., Sverdlov, V., Selberherr, S.: Using Strain for the Reduction of Surface Roughness Induced Spin Relaxation in Field-Effect Transistors with Thin Silicon Body Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Montpellier, France; 23.01.2012 - 25.01.2012; in: "Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2012), S. 77 - 78. | |
| 1148. | Weinbub, J., Rupp, K., Selberherr, S.: Utilizing Modern Programming Techniques and the Boost Libraries for Scientific Software Development Vortrag: C++Now, Aspen, CO, USA; 13.05.2012 - 18.05.2012; in: "Proceedings of C++Now (2012)", (2012), 10 S. | |
| 1147. | Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S.: Valley Splitting and Spin Relaxation in Strained Silicon Quantum Wells Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 05.08.2012 - 08.08.2012; in: "Book of Abstracts", (2012), S. P-27. | |
| 1146. | Orio, R., Ceric, H., Selberherr, S.: A Compact Model for Early Electromigration Lifetime Estimation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 23 - 26. https://doi.org/10.1109/SISPAD.2011.6035040 | |
| 1145. | Manavizadeh, N., Pourfath, M., Raissi, F., Asl-Soleimani, E.: A Comprehensive Study of Nanoscale Field Effect Diodes Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria; 18.04.2011 - 20.04.2011; in: "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", IEEE, (2011), ISBN: 978-1-4577-0105-4; 4 S. https://doi.org/10.1109/ESIME.2011.5765817 | |
| 1144. | Rupp, K., Jüngel, A., Grasser, T.: A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors Vortrag: Facing the Multicore Challenge II, Karlsruhe, Germany; 28.09.2011 - 30.09.2011; in: "Proceedings of Facing the Multicore Challenge II", (2011), 11 S. | |
| 1143. | Weinbub, J., Cervenka, J., Rupp, K., Selberherr, S.: A Generic High-Quality Meshing Framework Vortrag: Symposium on Trends in Unstructured Mesh Generation (Meshtrends), Minneapolis, USA; 25.07.2011 - 28.07.2011; in: "Proceedings of the 11th US National Congress on Computational Mechanics (USNCCM)", (2011), 1 S. | |
| 1142. | Filipovic, L., Selberherr, S.: A Level Set Simulator for Nanooxidation using Non-Contact Atomic Force Microscopy Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 307 - 310. https://doi.org/10.1109/SISPAD.2011.6035031 | |
| 1141. | Filipovic, L., Nedjalkov, M., Selberherr, S.: A Monte Carlo Simulator for Non-Contact Atomic Force Microscopy Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2011 - 10.06.2011; in: "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), S. 42 - 43. | |
| 1140. | Filipovic, L., Ceric, H., Cervenka, J., Selberherr, S.: A Simulator for Local Anodic Oxidation of Silicon Surfaces Vortrag: IEEE Canadian Conference on Electrical and Computer Engineering (CCECE), Niagara Falls, Canada; 08.05.2011 - 11.05.2011; in: "Proceedings of the 24th Canadian Conference on Electrical and Computer Engineering (CCECE 2011)", (2011), ISBN: 978-1-4244-9789-8; S. 695 - 698. https://doi.org/10.1109/CCECE.2011.6030543 | |
| 1139. | Filipovic, L., Selberherr, S.: A Two-Dimensional Lorentzian Distribution for an Atomic Force Microscopy Simulator Vortrag: Seminar on Monte Carlo Methods (MCM), Borovets; 29.08.2011 - 02.09.2011; in: "Abstracts IMACS Seminar on Monte Carlo Methods (MCM)", (2011), S. 30. | |
| 1138. | Stanojevic, Z., Karner, M., Schnass, K., Kernstock, Ch., Baumgartner, O., Kosina, H.: A Versatile Finite Volume Simulator for the Analysis of Electronic Properties of Nanostructures Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 143 - 146. https://doi.org/10.1109/SISPAD.2011.6035089 | |
| 1137. | Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S.: About the Switching Process in Magnetic Tunnel Junctions with Two Fixed Layers and One Soft Magnetic Layer Poster: Soft Magnetic Materials Conference (SMM), Kos, Greece; 18.09.2011 - 22.09.2011; in: "Abstracts Book of The 20th International Conference on Soft Magnetic Materials", (2011), ISBN: 978-960-9534-14-7; S. 444. | |
| 1136. | Starkov, I., Tyaginov, S. E., Enichlmair, H., Park, J.M., Ceric, H., Grasser, T.: Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping Measurements Vortrag: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; 25.09.2011 - 30.09.2011; in: "GADEST 2011: Abstract Booklet", (2011), S. 105 - 106. | |
| 1135. | Rupp, K., Grasser, T., Jüngel, A.: Adaptive Variable-Order Spherical Harmonics Expansion of the Boltzmann Transport Equation Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 151 - 155. https://doi.org/10.1109/SISPAD.2011.6034964 | |
| 1134. | Gös, W., Schanovsky, F., Grasser, T., Reisinger, H., Kaczer, B.: Advanced Modeling of Oxide Defects for Random Telegraph Noise Vortrag: International Conference on Noise and Fluctuations (ICNF), Toronto, Canada; 12.06.2011 - 16.06.2011; in: "Proceedings of the 21st International Conference on Noise and Fluctuations", (2011), 4 S. | |
| 1133. | Tyaginov, S. E., Starkov, I., Enichlmair, H., Jungemann, C., Park, J.M., Seebacher, E., Orio, R., Ceric, H., Grasser, T.: An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation Vortrag: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 03.10.2011 - 07.10.2011; in: "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", 51 (2011), S. 1525 - 1529. | |
| 1132. | Starkov, I., Starkov, A. S., Tyaginov, S. E., Enichlmair, H., Ceric, H., Grasser, T.: An Analytical Model for MOSFET Local Oxide Capacitance Vortrag: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 S. | |
| 1131. | Osintsev, D., Makarov, A., Selberherr, S., Sverdlov, V.: An InAs-Based Spin Field-Effect Transistor: A Path to Room Temperature Operation Vortrag: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 04.12.2011 - 09.12.2011; in: "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2011), 2 S. | |
| 1130. | Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H.: An Investigation of ZGNR-Based Transistors Vortrag: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 S. | |
| 1129. | Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H.: An Investigation of the Geometrical Effects on the Thermal Conductivity of Graphene Antidot Lattices Vortrag: 219th ECS Meeting, Montreal, Canada; 01.05.2011 - 06.05.2011; in: "219th ECS Meeting", (2011), 1 S. | |
| 1128. | Starkov, I., Ceric, H., Tyaginov, S. E., Grasser, T.: Analysis of Worst-Case Hot-Carrier Conditions for n-type MOSFET Vortrag: 7th Conference on PhD Research in Microelectronics and Electronics (PRIME), Madonna di Campiglio, Italy; 03.07.2011 - 07.07.2011; in: "Proceedings of the 7th Conference on PhD Research in Microelectronics and Electronics", (2011), ISBN: 978-1-4244-9136-0; 4 S. https://doi.org/10.1109/PRIME.2011.5966251 | |
| 1127. | Starkov, I., Ceric, H., Tyaginov, S. E., Grasser, T., Enichlmair, H., Park, J.M., Jungemann, C.: Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of n- and p-channel High-Voltage MOSFETs Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 127 - 130. https://doi.org/10.1109/SISPAD.2011.6035066 | |
| 1126. | Grasser, T., Wagner, P.-J., Reisinger, H., Aichinger, T., Pobegen, G., Nelhiebel, M., Kaczer, B.: Analytic Modeling of the Bias Temperature Instability Using Capture/Emission Time Maps Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 05.12.2011 - 07.12.2011; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2; 4 S. https://doi.org/10.1109/IEDM.2011.6131624 | |
| 1125. | Kaczer, B., Mahato, S., Valduga de Almeida Camargo, V., Toledano-Luque, M., Roussel, Ph. J., Grasser, T., Catthoor, F., Dobrovolny, P., Zuber, P., Wirth, G.I., Groeseneken, G.: Atomistic Approach to Variability of Bias-Temperature Instability in Circuit Simulations Poster: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 5 S. | |
| 1124. | Neophytou, N., Kosina, H.: Atomistic Simulations of Electronic and Thermoelectric Transport in Si Nanowires: Influence of Confinement and Orientation Vortrag: Workshop of the Physics and Applications of Semiconducting Nanowires (Nanowires11), Plomarion, Greece; 14.06.2011 - 17.06.2011; in: "Conference Proceedings of the Workshop of the Physics and Applications of Semiconducting Nanowires (Nanowires11)", (2011), 1 S. | |
| 1123. | Osintsev, D., Sverdlov, V., Stanojevic, Z., Selberherr, S.: Ballistic Spin Field Effect Transistor Based on Silicon Nanowires Vortrag: APS March Meeting, Dallas, Texas, USA; 21.03.2011 - 25.03.2011; in: "Bulletin American Physical Society (APS March Meeting 2011)", (2011). | |
| 1122. | Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Selberherr, S.: Ballistic Spin Field-Effect Transistors Built on Silicon Fins Poster: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada, Spain; 17.01.2011 - 19.01.2011; in: "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), S. 59 - 60. | |
| 1121. | Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S.: Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 30.08.2011 - 02.09.2011; in: "ECS Transactions", (2011), ISBN: 978-1-56677-900-5; S. 155 - 162. https://doi.org/10.1149/1.3615189 | |
| 1120. | Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S.: Ballistic Transport in Spin Field-Effect Transistors Built on Si and InAs Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 01.08.2011 - 05.08.2011; in: "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), S. 229. | |
| 1119. | Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S.: Ballistic Transport in Spin Field-Effect Transistors Built on Silicon Vortrag: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 17.07.2011 - 22.07.2011; in: "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 S. | |
| 1118. | Gös, W., Schanovsky, F., Reisinger, H., Kaczer, B., Grasser, T.: Bistable Defects as the Cause for NBTI and RTN Vortrag: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria (eingeladen); 25.09.2011 - 30.09.2011; in: "GADEST 2011: Abstract Booklet", (2011), S. 153. | |
| 1117. | Grasser, T.: Charge Trapping in Oxides From RTN to BTI Vortrag: International Reliability Physics Symposium (IRPS), Monterey (Tutorial); 10.04.2011 - 14.04.2011; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 128 S. | |
| 1116. | Yazdanpanah Goharrizi, A., Pourfath, M., Fathipour, M., Kosina, H.: Compact Model for the Electronic Properties of Edge-Disordered Graphene Nanoribbons Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria; 18.04.2011 - 20.04.2011; in: "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", IEEE, (2011), ISBN: 978-1-4577-0105-4; 4 S. https://doi.org/10.1109/ESIME.2011.5765816 | |
| 1115. | Orio, R., Selberherr, S.: Compact Modeling of Interconnect Reliability Vortrag: Conference on Electron Devices and Solid-State Circuits (EDSSC), Tianjin, China (eingeladen); 17.11.2011 - 18.11.2011; in: "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2011), ISBN: 978-1-4577-1998-1; 2 S. https://doi.org/10.1109/EDSSC.2011.6117564 | |
| 1114. | Neophytou, N., Kosina, H.: Confinement-Induced Mobility Increase in p-type [110] and [111] Silicon Nanowires Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada, Spain; 17.01.2011 - 19.01.2011; in: "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon On Insulator Thechnology, Devices and Circuits (EUROSOI)", (2011), 2 S. | |
| 1113. | Southwick III, R., Purnell, S. T., Rapp, B. A., Thompson, R. J., Pugmire, S. K., Kaczer, B., Grasser, T., Knowlton, B.: Cryogenic to Room Temperature Effects of NBTI in High-k PMOS Devices Vortrag: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 16.10.2011 - 20.10.2011; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), S. 12 - 16. | |
| 1112. | Weinbub, J., Rupp, K., Selberherr, S.: Distributed Heterogenous High-Performance Computing with ViennaCL Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2011 - 10.06.2011; in: "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), S. 88 - 90. | |
| 1111. | Mahmoudi, H., Sverdlov, V., Selberherr, S.: Domain-Wall Spintronic Memristor for Capacitance and Inductance Sensing Vortrag: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 S. | |
| 1110. | Baumgartner, O., Stanojevic, Z., Kosina, H.: Efficient Simulation of Quantum Cascade Lasers using the Pauli Master Equation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 91 - 94. https://doi.org/10.1109/SISPAD.2011.6035057 | |
| 1109. | Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S.: Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 28.09.2011 - 30.09.2011; in: "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), ISBN: 978-4-86348-200-5; 2 S. | |
| 1108. | Karamitaheri, H., Pourfath, M., Neophytou, N., Pazoki, M., Kosina, H.: First Principle Study of Ballistic Thermal Conductance of Graphene Antidot Lattices for Thermoelectric Applications Vortrag: Carbon-Based Low Dimensional Materials (Carbomat), Catania, Italy; 05.12.2011 - 07.12.2011; in: "Proceedings of the 2nd CARBOMAT Workshop", (2011), ISBN: 978-88-8080-124-5; S. 19 - 22. | |
| 1107. | Toledano-Luque, M., Kaczer, B., Franco, J., Roussel, Ph. J., Grasser, T., Hoffmann, T. Y., Groeseneken, G.: From Mean Values to Distributions of BTI Lifetime of Deeply Scaled FETs Through Atomistic Understanding of the Degradation Vortrag: Symposium on VLSI Technology, Kyoto, Japan; 14.06.2011 - 16.06.2011; in: "2011 Symposium on VLSI Technology Digest of Technical Papers", (2011), ISBN: 978-1-4244-9949-6; 2 S. | |
| 1106. | Weinbub, J., Cervenka, J., Rupp, K., Selberherr, S.: High-Quality Mesh Generation Based on Orthogonal Software Modules Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 139 - 142. https://doi.org/10.1109/SISPAD.2011.6035078 | |
| 1105. | Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H.: Hydrogen-Passivated Graphene Antidot Structures for Thermoelectric Applications Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria; 18.04.2011 - 20.04.2011; in: "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", IEEE, (2011), ISBN: 978-1-4577-0105-4; 4 S. https://doi.org/10.1109/ESIME.2011.5765811 | |
| 1104. | Pobegen, G., Aichinger, T., Grasser, T., Nelhiebel, M.: Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs Vortrag: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 03.10.2011 - 07.10.2011; in: "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2011), S. 1530 - 1534. | |
| 1103. | Starkov, I., Ceric, H.: Impact of Interface State Density on MOSFET Local Oxide Capacitance Degradation During Hot-Carrier Stress Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 28.09.2011 - 30.09.2011; in: "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), S. 90 - 91. | |
| 1102. | Tyaginov, S. E., Starkov, I., Jungemann, C., Enichlmair, H., Park, J.M., Grasser, T.: Impact of the Carrier Distribution Function on Hot-Carrier Degradation Modeling Vortrag: European Solid-State Device Research Conference (ESSDERC), Helsinki, Finland; 12.09.2011 - 16.09.2011; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2011), S. 151 - 154. | |
| 1101. | Poschalko, C., Selberherr, S.: Influence of the PCB Dielectric Material on the Coupling of PCB Traces to Enclosure Cavities Vortrag: Asia-Pacific International Symposium on Electromagnetic Compatibility, Jeju, Korea; 16.05.2011 - 19.05.2011; in: "Proceedings of Asia-Pacific International Symposium on Electromagnetic Compatibility", (2011), 4 S. | |
| 1100. | Ceric, H., Orio, R., Selberherr, S.: Integration of Atomistic and Continuum-Level Electromigration Models Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Incheon, South Korea; 04.07.2011 - 07.07.2011; in: "IPFA 2011 Proceedings", (2011), ISBN: 978-1-4577-0159-7; 4 S. https://doi.org/10.1109/IPFA.2011.5992749 | |
| 1099. | Ceric, H., Orio, R., Selberherr, S.: Interconnect Reliability Dependence on Fast Diffusivity Paths Vortrag: International Conference on Materials for Advanced Technologies (ICMAT), Suntec, Singapore (eingeladen); 26.06.2011 - 01.07.2011; in: "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2011)", (2011), S. 33. | |
| 1098. | Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S.: Micromagnetic Modeling of Penta-Layer Magnetic Tunnel Junctions with a Composite Soft Layer Vortrag: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 17.07.2011 - 22.07.2011; in: "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 S. | |
| 1097. | Orio, R., Ceric, H., Selberherr, S.: Modeling Electromigration Lifetimes of Copper Interconnects Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 30.08.2011 - 02.09.2011; in: "ECS Transactions", (2011), ISBN: 978-1-56677-900-5; S. 163 - 169. https://doi.org/10.1149/1.3615190 | |
| 1096. | Makarov, A., Selberherr, S., Sverdlov, V.: Modeling of Advanced Memories Vortrag: Conference on Electron Devices and Solid-State Circuits (EDSSC), Tianjin, China (eingeladen); 17.11.2011 - 18.11.2011; in: "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2011), ISBN: 978-1-4577-1998-1; 2 S. https://doi.org/10.1109/EDSSC.2011.6117568 | |
| 1095. | Bina, M., Aichinger, T., Pobegen, G., Gös, W., Grasser, T.: Modeling of DCIV Recombination Currents Using A Multistate Multiphonon Model Vortrag: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 16.10.2011 - 20.10.2011; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), S. 27 - 31. | |
| 1094. | Makarov, A., Sverdlov, V., Kryzhanovsky, D., Girkin, M., Selberherr, S.: Modeling of Non-Volatile Memory Cells of RRAM Type on High Performance Computer Systems with the Monte-Carlo Method Poster: Parallel Computing Technologies (PaVT), Moscow, Russia; 28.03.2011 - 01.04.2011; in: "Book of Abstracts: Parallel Computing Technologies (PaVT)", (2011), 1 S. | |
| 1093. | Makarov, A., Sverdlov, V., Osintsev, D., Weinbub, J., Selberherr, S.: Modeling of the Advanced Spin Transfer Torque Memory: Macro- and Micromagnetic Simulations Vortrag: The European Simulation and Modelling Conference (ESM), Guimaraes, Portugal; 24.10.2011 - 26.10.2011; in: "Proceedings of the 25th European Simulation and Modelling Conference", (2011), ISBN: 978-90-77381-66-3; S. 177 - 181. | |
| 1092. | Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S.: Modeling of the Switching Process in Multi-Layered Magnetic Tunnel Junctions Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 01.08.2011 - 05.08.2011; in: "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), S. 238. | |
| 1091. | Schwaha, P., Nedjalkov, M., Selberherr, S., Dimov, I.: Monte Carlo Investigations of Electron Decoherence due to Phonons Vortrag: Seminar on Monte Carlo Methods (MCM), Borovets; 29.08.2011 - 02.09.2011; in: "Abstracts IMACS Seminar on Monte Carlo Methods (MCM)", (2011), S. 48. | |
| 1090. | Baumgartner, O., Stanojevic, Z., Kosina, H.: Monte Carlo Simulation of Electron Transport in Quantum Cascade Lasers Vortrag: Seminar on Monte Carlo Methods (MCM), Borovets; 29.08.2011 - 02.09.2011; in: "Abstracts IMACS Seminar on Monte Carlo Methods (MCM)", (2011), S. 21. | |
| 1089. | Schanovsky, F., Baumgartner, O., Grasser, T.: Multi Scale Modeling of Multi Phonon Hole Capture in the Context of NBTI Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 15 - 18. https://doi.org/10.1109/SISPAD.2011.6035038 | |
| 1088. | Ceric, H., Orio, R., Schanovsky, F., Zisser, W. H., Selberherr, S.: Multilevel Simulation for the Investigation of Fast Diffusivity Paths Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 135 - 138. https://doi.org/10.1109/SISPAD.2011.6035068 | |
| 1087. | Vitanov, S., Kuzmik, J., Palankovski, V.: Normally-Off InAlN/GaN HEMTs with n++ GaN Cap Layer: A Simulation Study Vortrag: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 S. https://doi.org/10.1109/ISDRS.2011.6135161 | |
| 1086. | Rupp, K., Grasser, T., Jüngel, A.: On the Feasibility of Spherical Harmonics Expansions of the Boltzmann Transport Equation for Three-Dimensional Device Geometries Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 05.12.2011 - 07.12.2011; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2; 4 S. https://doi.org/10.1109/IEDM.2011.6131667 | |
| 1085. | Schanovsky, F., Grasser, T.: On the Microscopic Limit of the Reaction-Diffusion Model for the Negative Bias Temperature Instability Vortrag: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 16.10.2011 - 20.10.2011; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), S. 17 - 21. | |
| 1084. | Franco, J., Kaczer, B., Eneman, G., Roussel, Ph. J., Cho, M., Mitard, J., Witters, L., Hoffmann, T. Y., Groeseneken, G., Crupi, F., Grasser, T.: On the Recoverable and Permanent Components of Hot Carrier and NBTI in Si pMOSFETs and their Implications in Si0.45Ge0.55 pMOSFETs Vortrag: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 6 S. https://doi.org/10.1109/IRPS.2011.5784545 | |
| 1083. | Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S.: Optimization of the Penta-Layer Magnetic Tunnel Junction for Fast STTRAM Switching Vortrag: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 04.12.2011 - 09.12.2011; in: "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2011), 2 S. | |
| 1082. | Rupp, K., Grasser, T., Jüngel, A.: Parallel Preconditioning for Spherical Harmonics Expansions of the Boltzmann Transport Equation Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 147 - 150. https://doi.org/10.1109/SISPAD.2011.6034963 | |
| 1081. | Filipovic, L., Ertl, O., Selberherr, S.: Parallelization Strategy for Hierarchical Run Length Encoded Data Structures Vortrag: IASTED International Conference on Parallel and Distributed Computing and Networks (PDCN 2011), Innsbruck; 15.02.2011 - 17.02.2011; in: "Proceedings of the IASTED International Conference on Parallel and Distributed Computing and Networks (PDCN 2011)", (2011), ISBN: 978-0-88986-864-9; S. 131 - 138. https://doi.org/10.2316/P.2011.719-045 | |
| 1080. | Aloise, G. R., Vitanov, S., Palankovski, V.: Performance Study of Nitride-Based Gunn Diodes Vortrag: Nanotech 2011, Boston, USA; 13.06.2011 - 16.06.2011; in: "Technical Proceedings of the 2011 NSTI Nanotechnology Conference & Expo - Nanotech 2011", (2011), ISBN: 978-1-4398-7139-3; 4 S. | |
| 1079. | Schwaha, P., Nedjalkov, M., Selberherr, S., Dimov, I.: Phonon-Induced Decoherence in Electron Evolution Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2011 - 10.06.2011; in: "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), S. 74 - 75. | |
| 1078. | Starkov, A., Pakhomov, O., Starkov, I.: Physical Model for Ferroelectrics Based on Pyrocurrent Consideration Poster: 12th European Meeting on Ferroelectricity, Bordeaux, France; 26.06.2011 - 01.07.2011. | |
| 1077. | Tyaginov, S. E., Starkov, I., Enichlmair, H., Park, J.M., Jungemann, C., Grasser, T.: Physics-Based Hot-Carrier Degradation Modeling Vortrag: 219th ECS Meeting, Montreal, Canada (eingeladen); 01.05.2011 - 06.05.2011; in: "Meet. Abstr. - Electrochem. Soc. 2011", (2011)", (2011), 1 S. | |
| 1076. | Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S.: Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 59 - 62. https://doi.org/10.1109/SISPAD.2011.6035049 | |
| 1075. | Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S.: Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors Operated at Elevated Temperature Vortrag: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 S. | |
| 1074. | Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Weinbub, J., Selberherr, S.: Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors Vortrag: Meeting of the Electrochemical Society (ECS), Montreal, Canada; 01.05.2011 - 06.05.2011; in: "Meeting Abstracts", ECS, MA2011-01(23): 1453 (2011), S. 1. | |
| 1073. | Hehenberger, Ph., Gös, W., Baumgartner, O., Franco, J., Kaczer, B., Grasser, T.: Quantum-Mechanical Modeling of NBTI in High-k SiGe MOSFETs Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 11 - 14. https://doi.org/10.1109/SISPAD.2011.6035036 | |
| 1072. | Kaczer, B., Toledano-Luque, M., Franco, J., Grasser, T., Roussel, Ph. J., Camargo, V. V. A., Mahato, S., Simoen, E., Catthoor, F., Wirth, G.I., Groeseneken, G.: Recent Trends in CMOS Reliability: From Individual Traps to Circuit Simulations Vortrag: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA (eingeladen); 16.10.2011 - 20.10.2011; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), S. 32. | |
| 1071. | Toledano-Luque, M., Kaczer, B., Roussel, Ph. J., Grasser, T., Wirth, G.I., Franco, J., Vrancken, C., Horiguchi, N., Groeseneken, G.: Response of a Single Trap to AC Negative Bias Temperature Stress Vortrag: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 8 S. | |
| 1070. | Tyaginov, S. E., Starkov, I., Triebl, O., Ceric, H., Grasser, T., Enichlmair, H., Park, J.M., Jungemann, C.: Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage n-MOSFET Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 123 - 126. https://doi.org/10.1109/SISPAD.2011.6035065 | |
| 1069. | Kosina, H.: Semiconductor Device Modeling: The Last 30 Years Vortrag: GMe Forum 2011, Vienna, Austria (eingeladen); 14.04.2011 - 15.04.2011; in: "Abstracts of the Invited Presentations", (2011), S. 9. | |
| 1068. | Starkov, A., Pakhomov, O., Starkov, I.: Solid-State Cooler - New Opportunities Poster: 12th European Meeting on Ferroelectricity, Bordeaux, France; 26.06.2011 - 01.07.2011. | |
| 1067. | Neophytou, N., Kosina, H.: Strong Anisotropy and Diameter Effects on the Low-Field Mobility of Silicon Nanowires Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 31 - 34. https://doi.org/10.1109/SISPAD.2011.6035042 | |
| 1066. | Vitanov, S., Kuzmik, J., Palankovski, V.: Study of the Conduction Properties of the n++ GaN Cap Layer in GaN/InAlN/GaN E-HEMTs Vortrag: International Scientific and Applied Science Conference on Electronics, Sozopol, Bulgaria; 14.09.2011 - 16.09.2011; in: "Annual Journal of Electronics", (2011), S. 113 - 116. | |
| 1065. | Stanojevic, Z., Sverdlov, V., Baumgartner, O., Kosina, H.: Subband Engineering in n-Type Silicon Nanowires using Strain and Confinement Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada, Spain; 17.01.2011 - 19.01.2011; in: "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), S. 99 - 100. | |
| 1064. | Stanojevic, Z., Sverdlov, V., Selberherr, S.: Subband Structure Engineering in Silicon-on-Insulator FinFETs using Confinement Poster: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Montreal; 01.05.2011 - 06.05.2011; in: "219th ECS Meeting", Vol.35, No.5 (2011), ISBN: 978-1-56677-866-4; S. 117 - 122. https://doi.org/10.1149/1.3570785 | |
| 1063. | Franco, J., Kaczer, B., Eneman, G., Roussel, Ph. J., Grasser, T., Mitard, J., Ragnarsson, L., Cho, M., Witters, L., Chiarella, T., Togo, M., Wang, W., Hikavyy, A., Loo, R., Horiguchi, N., Groeseneken, G.: Superior NBTI Reliability of SiGe Channel pMOSFETs: Replacement Gate, FinFETs, and Impact of Body Bias Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 05.12.2011 - 07.12.2011; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2; 4 S. https://doi.org/10.1109/IEDM.2011.6131580 | |
| 1062. | Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S.: Switching Time and Current Reduction Using a Composite Free Layer in Magnetic Tunnel Junctions Poster: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 S. | |
| 1061. | Aloise, G. R., Vitanov, S., Palankovski, V.: Temperature Dependence of the Transport Properties of InN Vortrag: Microtherm 2011, Lodz, Poland; 28.06.2011 - 01.07.2011; in: "Official Proceedings of Microtherm 2011", (2011), ISBN: 978-83-932197-0-4; 6 S. | |
| 1060. | Grasser, T., Aichinger, T., Pobegen, G., Reisinger, H., Wagner, P.-J., Franco, J., Nelhiebel, M., Kaczer, B.: The `Permanent´ Component of NBTI: Composition and Annealing Vortrag: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 9 S. | |
| 1059. | Neophytou, N., Kosina, H.: Thermoelectric Power Factor of Low Dimensional Silicon Nanowires Vortrag: European Conference on Thermoelectrics, Thessaloniki, Greece; 28.09.2011 - 30.09.2011; in: "Conference Proceedings of 9th European Conference on Thermoelectrics", (2011), 4 S. | |
| 1058. | Neophytou, N., Kosina, H.: Thermoelectric Power Factor of Narrow Silicon Nanowires from Atomistic Considerations Vortrag: 30th International Conference on Thermoelectrics, Michigan, USA; 17.07.2011 - 21.07.2011; in: "Book of Abstracts", (2011), 1 S. | |
| 1057. | Neophytou, N., Kosina, H.: Thermoelectric Properties of Ultra Narrow Silicon Nanowires from Atomistic Calculations Vortrag: APS March Meeting, Dallas, Texas; 21.03.2011 - 25.03.2011; in: "APS March Meeting 2011", (2011), 1 S. | |
| 1056. | Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H.: Transport Gap Engineering in Zigzag Graphene Nanoribbons Poster: Trends in Nanotechnology Conference (TNT), Canary Islands, Spain; 21.11.2011 - 25.11.2011; in: "Poster Abstracts Book (TNT 2011)", (2011), S. 2. | |
| 1055. | Selberherr, S. (2011). Transport Modeling for Nanoscale Semiconductor Devices. IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba, Non-EU. (reposiTUm) | |
| 1054. | Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S.: Transport Modeling in Spin Field-Effect Transistors Built on Silicon Fins Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2011 - 10.06.2011; in: "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), S. 64. | |
| 1053. | Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Selberherr, S.: Transport Properties of Spin Field-Effect Transistors Built on Si and InAs Vortrag: International Conference on Ultimate Integration of Silicon (ULIS), Cork, Ireland; 14.03.2011 - 16.03.2011; in: "Proceedings of the 12th International Conference on Ultimate Integration on Silicon (ULIS)", IEEE, (2011), ISBN: 978-1-4577-0090-3; S. 210 - 213. https://doi.org/10.1109/ULIS.2011.5757998 | |
| 1052. | Pobegen, G., Aichinger, T., Nelhiebel, M., Grasser, T.: Understanding Temperature Acceleration for NBTI Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 05.12.2011 - 07.12.2011; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2; 4 S. https://doi.org/10.1109/IEDM.2011.6131623 | |
| 1051. | Reisinger, H., Grasser, T., Ermisch, K., Nielen, H., Gustin, W., Schlünder, C.: Understanding and Modeling AC BTI Vortrag: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 8 S. | |
| 1050. | Bukhori, M. F., Grasser, T., Kaczer, B., Reisinger, H., Asenov, A.: 'Atomistic' Simulation of RTS Amplitudes Due to Single and Multiple Charged Defect States and Their Interactions Vortrag: IEEE International Integrated Reliability Workshop, California; 17.10.2010 - 21.10.2010; in: "Final Report of IEEE International Integrated Reliability Workshop", (2010), S. 76 - 79. https://doi.org/10.1109/IIRW.2010.5706490 | |
| 1049. | Franco, J., Kaczer, B., Eneman, G., Mitard, J., Stesmans, A., Afanas´Ev, V., Kauerauf, T., Roussel, Ph. J., Toledano-Luque, M., Cho, M., Degraeve, R., Grasser, T., Ragnarsson, L., Witters, L., Tseng, J., Takeoka, S., Wang, W., Hoffmann, T. Y., Groeseneken, G.: 6Å EOT Si45Ge55 pMOSFET with Optimized Reliability (VDD=1V): Meeting the NBTI Lifetime Target at Ultra-Thin EOT Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 06.12.2010 - 08.12.2010; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2010), S. 70 - 73. https://doi.org/10.1109/IEDM.2010.5703292 | |
| 1048. | Neophytou, N., Klimeck, G., Kosina, H.: A Comprehensive Atomistic Analysis of Bandstructure Velocities in Si Nanowires Poster: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4; S. 93 - 96. https://doi.org/10.1109/IWCE.2010.5678007 | |
| 1047. | Weinbub, J., Schwaha, P., Heinzl, R., Stimpfl, F., Selberherr, S.: A Dispatched Covariant Type System for Numerical Applications in C++ Vortrag: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in: "AIP Conference Proceedings", (2010), ISBN: 978-0-7354-0834-0; S. 1663 - 1666. | |
| 1046. | Weinbub, J., Heinzl, R., Schwaha, P., Stimpfl, F., Selberherr, S.: A Lightweight Material Library for Scientific Computing in C++ Vortrag: The European Simulation and Modelling Conference (ESM), Hasselt; 25.10.2010 - 27.10.2010; in: "Proceedings of the European Simulation and Modelling Conference (ESM)", (2010), ISBN: 978-90-77381-57-1; S. 454 - 458. | |
| 1045. | Rupp, K., Grasser, T., Jüngel, A.: A Matrix Compression Scheme for Spherical Harmonics Expansions of the Boltzmann Transport Equation Vortrag: Junior Scientist Conference 2010 (JSC 2010), Wien; 07.04.2010 - 09.04.2010; in: "Proceedings of the Junior Scientist Conference 2010", (2010), ISBN: 978-3-200-01797-9; S. 7 - 8. | |
| 1044. | Mach, G., Heinzl, R., Schwaha, P., Stimpfl, F., Weinbub, J., Selberherr, S.: A Modular Tool Chain for High Performance CFD Simulations in Intracranial Aneurysms Vortrag: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in: "AIP Conference Proceedings", (2010), ISBN: 978-0-7354-0834-0; S. 1647 - 1650. | |
| 1043. | Makarov, A., Sverdlov, V., Selberherr, S.: A Monte Carlo Simulation of Reproducible Hysteresis in RRAM Vortrag: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4; S. 35 - 38. https://doi.org/10.1109/IWCE.2010.5677934 | |
| 1042. | Schlünder, C., Reisinger, H., Gustin, W., Grasser, T.: A New Physics-Based NBTI Model for DC-and AC-Stress Enabling Accurate Circuit Aging Simulations Considering Recovery Vortrag: 4. GMM/GI/ITG-Fachtagung Zuverlässigkeit und Entwurf (ZuE 2010), Wildbad Kreuth; 13.09.2010 - 15.09.2010; in: "GMM- Fachbericht", 66 (2010), S. 33 - 40. | |
| 1041. | Makarov, A., Sverdlov, V., Selberherr, S.: A Stochastic Model of Bipolar Resistive Switching in Metal-Oxide-Based Memory Vortrag: European Solid-State Device Research Conference (ESSDERC), Sevilla; 14.09.2010 - 16.09.2010; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-1-4244-6660-3; S. 396 - 399. | |
| 1040. | Stimpfl, F., Weinbub, J., Heinzl, R., Schwaha, P., Selberherr, S.: A Unified Topological Layer for Finite Element Space Discretization Vortrag: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in: "AIP Conference Proceedings", (2010), ISBN: 978-0-7354-0834-0; S. 1655 - 1658. | |
| 1039. | Schanovsky, F., Gös, W., Grasser, T.: Ab-Initio Calculation of the Vibrational Influence on Hole-Trapping Vortrag: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4; S. 163 - 166. https://doi.org/10.1109/IWCE.2010.5677989 | |
| 1038. | Garcia-Barrientos, A., Palankovski, V., Grimalsky, V.: Amplification of Space Charge Waves at Very High Electric Fields in GaAs Films Vortrag: International Conference on Microelectronics (MIEL), Nis; 16.05.2010 - 19.05.2010; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2010), ISBN: 978-1-4244-7198-0; S. 161 - 164. https://doi.org/10.1109/MIEL.2010.5490510 | |
| 1037. | Garcia-Barrientos, A., Palankovski, V.: Amplification of Space Charge Waves in n-InP Films Vortrag: 7th International Conference on Electrical Engineering, Computing, Science and Automatic Control (CCE 2010), Chiapas, Mexico; 08.09.2010 - 10.09.2010; in: "Proceedings of the 7th International Conference on Electrical Engineering, Computing, Science and Automatic Control (CCE 2010)", IEEE, (2010), ISBN: 978-1-4244-7314-4; S. 613 - 616. https://doi.org/10.1109/ICEEE.2010.5608605 | |
| 1036. | Starkov, I., Tyaginov, S. E., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J.M., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T.: Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; S. 139 - 144. | |
| 1035. | Neophytou, N., Wagner, M., Kosina, H.: Atomistic Analysis of Thermoelectric Properties of Silicon Nanowires Vortrag: 8th European Conference on Thermoelectrics (ECT 2010), Como; 22.09.2010 - 24.09.2010; in: "Note-Book of Abstracts", (2010), S. 30. | |
| 1034. | Neophytou, N., Kosina, H.: Atomistic Analysis of Thermoelectric Properties of Ultra Narrow Nanowires Vortrag: Annual March Meeting of the American Physical Society, Portland; 15.03.2010 - 19.03.2010; in: "Proceedings of the Annual March Meeting of the American Physical Society", (2010), S. 401. | |
| 1033. | Rupp, K., Weinbub, J., Rudolf, F.: Automatic Performance Optimization in ViennaCL for GPUs Vortrag: Workshop on Parallel/High-Performance Object-Oriented Scientific Computing, Reno, Nevada, USA; 17.10.2010 - 21.10.2010; in: "Proceedings of the 9th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing", (2010), 6 S. https://doi.org/10.1145/2039312.2039318 | |
| 1032. | Dedyk, A., Pavlova, Y., Pakhomov, O. V., Starkov, A. S., Starkov, I., Semenov, A., Karmanenko, S.: Capacitance Hysteresis of the Temperature Dependence for Ferroelectric Barium-Strontium Titanate Capacitors Poster: 16th Workshop on Dielectric Materials (WoDiM), Bratislava, Slovakia; 28.06.2010 - 30.06.2010; in: "Book of Abstracts WoDiM 2010", (2010), S. 93. | |
| 1031. | Gös, W., Schanovsky, F., Hehenberger, Ph., Wagner, P.-J., Grasser, T.: Charge Trapping and the Negative Bias Temperature Instability Vortrag: 218th ECS Meeting, Las Vegas, USA; 10.10.2010 - 15.10.2010; in: "Meet. Abstr. - Electrochem. Soc. 2010", (2010), ISBN: 978-1-56677-822-0; 565 S. | |
| 1030. | Vainshtein, S., Yuferev, V., Kostamovaara, J., Palankovski, V.: Collapsing Field Domains in Avalanche GaAs Transistors: Peculiar Phenomenon and Prospective Applications Hauptvortrag: International Scientific and Applied Science Conference (ET), Sozopol, Bulgaria (eingeladen); 22.09.2009 - 24.09.2009; in: "Annual Journal of Electronics", Technical University of Sofia, 4 (2010), ISSN: 1313-1842; S. 12 - 17. | |
| 1029. | Sverdlov, V., Stanojevic, Z., Baumgartner, O., Selberherr, S.: Confinement-Enhanced Valley Splitting for Spin-Driven Silicon Devices Vortrag: 6th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI), Tokyo; 01.08.2010 - 04.08.2010; in: "Proceedings of the 6th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI)", (2010), S. 273 - 274. | |
| 1028. | Pobegen, G., Aichinger, T., Nelhiebel, M., Grasser, T.: Dependence of the Negative Bias Temperature Instability on the Gate Oxide Thickness Vortrag: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0; S. 1073 - 1077. | |
| 1027. | Toledano-Luque, M., Kaczer, B., Roussel, Ph. J., Degraeve, R., Franco, J., Kauerauf, T., Grasser, T., Groeseneken, G.: "Depth Localization of Trapped Holes in SiON after Positive and Negative Gate Stress"; Poster: Semiconductor Interface Specialists Conference (SISC), San Diego; 02.12.2010 - 04.12.2010. | |
| 1026. | Milovanovic, G., Baumgartner, O., Kosina, H.: Design of a MIR QCL based on Intervalley Electron Transfer: A Monte Carlo Approach Poster: 10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), Shanghai; 05.09.2010 - 09.09.2010; in: "Proceedings of the 10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices", (2010), S. 140 - 141. | |
| 1025. | Rupp, K.: Deterministic Numerical Solution of the Boltzmann Transport Equation Vortrag: Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS, Wien, Austria (eingeladen); 03.11.2010 - 05.11.2010; in: "Proceedings of the Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS", (2010), S. 7 - 8. | |
| 1024. | Huang, R., Robl, W., Dehm, G., Ceric, H., Detzel, T.: Disparate Tendency of Stress Evolution of Thin and Thick Electroplated Cu Films at Room Temperature Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; S. 1 - 6. | |
| 1023. | Ceric, H., Orio, R., Selberherr, S.: Electromigration Anisotropy and Mechanical Stress in Modern Copper Interconnect Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; S. 167 - 170. | |
| 1022. | Vitanov, S., Palankovski, V.: Electron Mobility Models for III-Nitrides Vortrag: International Scientific and Applied Science Conference (ET), Sozopol; 22.09.2010 - 24.09.2010; in: "Annual Journal of Electronics", (2010), ISSN: 1313-1842; S. 18 - 21. | |
| 1021. | Stanojevic, Z., Baumgartner, O., Sverdlov, V., Kosina, H.: Electronic Band Structure Modeling in Strained Si-Nanowires: Two Band k · p Versus Tight Binding Vortrag: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4; S. 5 - 8. https://doi.org/10.1109/IWCE.2010.5677927 | |
| 1020. | Sverdlov, V., Stanojevic, Z., Baumgartner, O., Selberherr, S.: Enhanced Valley Splitting in Silicon Nanowires and Point Contacts Poster: Nanoelectronics Days 2010, Aachen, Germany; 04.10.2010 - 07.10.2010; in: "Abstract Book of the Nanoelectronics Days 2010", JARA-FIT, (2010), S. 118. | |
| 1019. | Neophytou, N., Kosina, H.: Extracting thermoelectric properties of nanostructures using the atomistic sp3d5s*-SO tight-binding model Poster: 451. WE-Heraeus-Seminar, Physikzentrum Bad Honnef; 21.02.2010 - 24.02.2010; in: "Nanostructured Thermoelectric Materials", (2010), 1 S. | |
| 1018. | Makarov, A., Weinbub, J., Sverdlov, V., Selberherr, S.: First-Principles Modeling of Bipolar Resistive Switching in Metal-Oxide Based Memory Vortrag: The European Simulation and Modelling Conference (ESM), Hasselt; 25.10.2010 - 27.10.2010; in: "Proceedings of the European Simulation and Modelling Conference (ESM)", (2010), ISBN: 978-90-77381-57-1; S. 181 - 186. | |
| 1017. | Gottschling, P., Heinzl, R., Weinbub, J., Kirchner, N., Sauer, M., Klomfass, A., Steinhardt, C., Wensch, J.: Generic C++ Implementation of High-Performance BFS-RBF-based Mesh Motion Schemes Vortrag: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in: "AIP Conference Proceedings", 1281 (2010), ISBN: 978-0-7354-0834-0; S. 1631 - 1634. | |
| 1016. | Starkov, I., Tyaginov, S. E., Enichlmair, H., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J.M., Ceric, H., Grasser, T.: HC Degradation Model: Interface State Profile-Simulations vs. Experiment Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 28.06.2010 - 30.06.2010; in: "Book of Abstracts", (2010), S. 128. | |
| 1015. | Vitanov, S., Palankovski, V.: High-Temperature Small-Signal Analysis of AlGaN/GaN HEMTs Poster: Junior Scientist Conference 2010 (JSC 2010), Wien; 07.04.2010 - 09.04.2010; in: "Proceedings of the Junior Scientist Conference", (2010), ISBN: 978-3-200-01797-9; S. 59 - 60. | |
| 1014. | Schanovsky, F., Gös, W., Grasser, T.: Hole Capture into Oxide Defects in MOS Structures from First Principles Poster: Ψk - 2010 Conference, Berlin; 12.09.2010 - 16.09.2010; in: "Abstract Book", (2010), S. 435. | |
| 1013. | Tyaginov, S. E., Starkov, I., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J.M., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T.: Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; S. 341 - 345. | |
| 1012. | Vitanov, S., Palankovski, V., Selberherr, S.: Hydrodynamic Models for GaN-Based HEMTs Poster: European Solid-State Device Research Conference (ESSDERC), Sevilla; 14.09.2010 - 16.09.2010; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-84-693-6437-6; 4 S. | |
| 1011. | Aichinger, T., Puchner, S., Nelhiebel, M., Grasser, T., Hutter, H.: Impact of Hydrogen on Recoverable and Permanent Damage following Negative Bias Temperature Stress Vortrag: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0; S. 1063 - 1068. | |
| 1010. | Ceric, H., Orio, R., Selberherr, S.: Impact of Parameter Variability on Electromigration Lifetime Distribution Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 06.09.2010 - 08.09.2010; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2; S. 217 - 220. https://doi.org/10.1109/SISPAD.2010.5604523 | |
| 1009. | Franco, J., Kaczer, B., Mitard, J., Eneman, G., Roussel, Ph. J., Crupi, F., Grasser, T., Witters, L., Hoffmann, T. Y., Groeseneken, G.: "Implications of Channel Hot Carrier Degradation in Si0.45Ge0.55 pMOSFETs"; Poster: Semiconductor Interface Specialists Conference (SISC), San Diego; 02.12.2010 - 04.12.2010. | |
| 1008. | Franco, J., Kaczer, B., Cho, M., Eneman, G., Groeseneken, G., Grasser, T.: Improvements of NBTI Reliability in SiGe p-FETs Vortrag: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0; S. 1082 - 1085. | |
| 1007. | Rupp, K.: Increased Efficiency In Finite Element Computations Through Template Metaprogramming Vortrag: High Performance Computing Symposium (HPC), Orlando, FL, USA; 12.04.2010 - 15.04.2010; in: "Proceedings of the Spring Simulation Multiconference 2010", ACM, (2010), ISBN: 978-1-4503-0069-8; 1 S. https://doi.org/10.1145/1878537.1878633 | |
| 1006. | Tyaginov, S. E., Starkov, I., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J.M., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T.: Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Montecassino Abbey and Gaeta; 11.10.2010 - 15.10.2010; in: "Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2010), 3 S. | |
| 1005. | Sverdlov, V., Baumgartner, O., Selberherr, S.: Large Valley Splitting in Slightly Misaligned Uniaxially Strained Silicon Films Vortrag: APS March Meeting, Portland; 15.03.2010 - 19.03.2010; in: "Bulletin American Physical Society (APS March Meeting 2010)", 49/2 (2010), S. B9.00001. | |
| 1004. | Schwaha, P., Heinzl, R.: Marching Simplices Vortrag: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in: "AIP Conference Proceedings", 1281 (2010), ISBN: 978-0-7354-0834-0; S. 1651 - 1654. | |
| 1003. | Pourfath, M., Sverdlov, V., Selberherr, S.: Modeling Demands for Nanoscale Devices Vortrag: Device Research Conference, South Bend (eingeladen); 21.06.2010 - 23.06.2010; in: "Proceedings of the Device Research Conference (DRC)", (2010), ISBN: 978-1-4244-7870-5; S. 211 - 214. | |
| 1002. | Sverdlov, V., Selberherr, S.: Modeling Floating Body Z-RAM Storage Cells Vortrag: International Conference on Microelectronics (MIEL), Nis (eingeladen); 16.05.2010 - 19.05.2010; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2010), ISBN: 978-1-4244-7198-0; S. 45 - 50. https://doi.org/10.1109/MIEL.2010.5490533 | |
| 1001. | Sverdlov, V., Selberherr, S.: Modeling of Modern MOSFETs with Strain Vortrag: International Workshop on Semiconductor Devices Modeling and Electronic Materials, La Plata, Buenos Aires, Argentina (eingeladen); 01.11.2010 - 03.11.2010; in: "Proceedings of the 1st International Workshop on Semiconductor Devices Modeling and Electronic (SDMEM2010)", (2010), ISBN: 978-950-34-0794-3; S. 1 - 11. | |
| 1000. | Makarov, A., Sverdlov, V., Selberherr, S.: Modeling of Resistive Switching in RRAM Using Monte Carlo Simulations Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 28.06.2010 - 30.06.2010; in: "Book of Abstracts", (2010), S. 141. | |
| 999. | Huang, R., Robl, W., Detzel, T., Ceric, H.: Modeling of Stress Evolution of Electroplated Cu Films during Self-annealing Poster: IEEE International Reliability Physics Symposium, Anaheim, USA; 02.05.2010 - 06.05.2010; in: "Proceedings of the IEEE International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0; S. 911 - 917. | |
| 998. | Makarov, A., Sverdlov, V., Selberherr, S.: Modelling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations Vortrag: International Conference on Numerical Methods and Applications (NM&A), Borovets; 20.08.2010 - 24.08.2010; in: "Abstracts of the International Conference on Numerical Methods and Applications (NM&A)", (2010), S. B-39. | |
| 997. | Makarov, A., Sverdlov, V., Selberherr, S.: Monte Carlo Simulation of Bipolar Resistive Switching Memories Vortrag: Nanoelectronics Days 2010, Aachen; 04.10.2010 - 07.10.2010; in: "Proceedings of the Nanoelectronics Days 2010", (2010), S. 22. | |
| 996. | Schanovsky, F., Gös, W., Grasser, T.: Mulit-Phonon Hole-Trapping from First-Principles Vortrag: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 28.06.2010 - 30.06.2010; in: "Book of Abstracts", (2010), S. 54. | |
| 995. | Vitanov, S., Palankovski, V., Maroldt, S., Quay, R.: Non-Linearity of Transconductance and Source-Gate Resistance of HEMTs Poster: European Solid-State Device Research Conference (ESSDERC), Sevilla; 14.09.2010 - 16.09.2010; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-84-693-6437-6; 4 S. | |
| 994. | Grasser, T., Aichinger, T., Reisinger, H., Franco, J., Wagner, P.-J., Nelhiebel, M., Ortolland, C., Kaczer, B.: On the 'Permanent' Component of NBTI Vortrag: IEEE International Integrated Reliability Workshop, California; 17.10.2010 - 21.10.2010; in: "Final Report of IEEE International Integrated Reliability Workshop", (2010), S. 2 - 7. https://doi.org/10.1109/IIRW.2010.5706472 | |
| 993. | Pourfath, M., Yazdanpanah Goharrizi, A., Fathipour, M., Kosina, H.: On the Role of Line-Edge Roughness on the Diffusion and Localization in GNRs Vortrag: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4; S. 45 - 48. https://doi.org/10.1109/IWCE.2010.5677936 | |
| 992. | Kaczer, B., Grasser, T., Roussel, Ph. J., Franco, J., Degraeve, R., Ragnarsson, L., Simoen, E., Groeseneken, G., Reisinger, H.: Origin of NBTI Variability in Deeply Scaled pFETs Vortrag: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0; S. 26 - 32. | |
| 991. | Wagner, P.-J., Grasser, T., Reisinger, H., Kaczer, B.: Oxide Traps in MOS Transistors: Semi-Automatic Extraction of Trap Parameters from Time Dependent Defect Spectroscopy Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; S. 134 - 138. | |
| 990. | Kosina, H.: Quantum Cascade Laser Modeling based on the Pauli Master Equation Vortrag: Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS, Wien (eingeladen); 03.11.2010 - 05.11.2010; in: "Proceedings of the Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS", (2010), S. 6. | |
| 989. | Grasser, T., Kaczer, B., Gös, W., Reisinger, H., Aichinger, T., Hehenberger, Ph., Wagner, P.-J., Schanovsky, F., Franco, J., Roussel, Ph. J., Nelhiebel, M.: Recent Advances in Understanding the Bias Temperature Instability Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA (eingeladen); 06.12.2010 - 08.12.2010; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2010), S. 82 - 85. https://doi.org/10.1109/IEDM.2010.5703295 | |
| 988. | Kaczer, B., Grasser, T., Franco, J., Toledano-Luque, M., Roussel, Ph. J., Groeseneken, G.: Recent Trends in Bias Temperature Instability Vortrag: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava (eingeladen); 28.06.2010 - 30.06.2010; in: "Book of Abstracts", (2010), S. 55. | |
| 987. | Hehenberger, Ph., Reisinger, H., Grasser, T.: Recovery of Negative and Positive Bias Temperature Stress in pMOSFETs Vortrag: IEEE International Integrated Reliability Workshop, California; 17.10.2010 - 21.10.2010; in: "Final Report of IEEE International Integrated Reliability Workshop", (2010), S. 8 - 11. https://doi.org/10.1109/IIRW.2010.5706473 | |
| 986. | Ryan, J., Lenahan, P., Grasser, T., Enichlmair, H.: Recovery-Free Electron Spin Resonance Observations of NBTI Degradation Vortrag: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0; S. 43 - 49. | |
| 985. | Poschalko, C., Selberherr, S.: Relation between the PCB Near Field and the Common Mode Coupling from the PCB to Cables Vortrag: Asia-Pacific International Symposium on Electromagnetic Compatibility, Beijing; 12.04.2010 - 16.04.2010; in: "Proceedings of the Asia-Pacific International Symposium on Electromagnetic Compatibility (EMC)", (2010), ISBN: 978-1-4244-5623-9; S. 1102 - 1105. | |
| 984. | Sverdlov, V., Selberherr, S.: Scalability of a Second Generation Z-RAM Cell: A Computational Study Vortrag: International Conference on Computational & Experimental Engineering and Sciences (ICCES), Las Vegas; 28.03.2010 - 01.04.2010; in: "Proceedings of the International Conference on Computational & Experimental Engineering and Sciences (ICCES)", (2010), ISBN: 978-0-9824205-3-9; S. 232 - 247. | |
| 983. | Sverdlov, V., Stanojevic, Z., Baumgartner, O., Selberherr, S.: Spin-Driven Silicon Devices Utilizing Enhanced Valley Splitting Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona (eingeladen); 05.12.2010 - 10.12.2010; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2010), S. TH-06. | |
| 982. | Nedjalkov, M., Selberherr, S., Dimov, I.: Stochastic Algorithm for Solving the Wigner-Boltzmann Correction Equation Vortrag: International Conference on Numerical Methods and Applications (NM&A), Borovets; 20.08.2010 - 24.08.2010; in: "Abstracts of the International Conference on Numerical Methods and Applications (NM&A)", (2010), S. B-43. | |
| 981. | Makarov, A., Sverdlov, V., Selberherr, S.: Stochastic Modeling Hysteresis and Resistive Switching in Bipolar Oxide-Based Memory Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 06.09.2010 - 08.09.2010; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2; S. 237 - 240. https://doi.org/10.1109/SISPAD.2010.5604517 | |
| 980. | Makarov, A., Sverdlov, V., Selberherr, S.: Stochastic Modeling of the Resistive Switching Mechanism in Oxide-Based Memory Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in: "Proceedings of the 17th International Symposium on the Physics & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; S. 309 - 312. | |
| 979. | Sverdlov, V., Selberherr, S.: Strain Engineering Techniques: A Rigorous Physical Review Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona (eingeladen); 05.12.2010 - 10.12.2010; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2010), S. TH-05. | |
| 978. | Baumgartner, O., Sverdlov, V., Kosina, H., Selberherr, S.: Strain-Induced Valley Splitting in Slightly Misaligned Silicon Films Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Grenoble; 25.01.2010 - 27.01.2010; in: "Conference Proceedings of the Sixth Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2010), S. 91 - 92. | |
| 977. | Cervenka, J., Kosina, H., Selberherr, S., Zhang, J., Hrauda, N., Stangl, J., Bauer, G., Vastola, G., Marzegalli, A., Miglio, L.: Strained MOSFETs on Ordered SiGe Dots Vortrag: European Solid-State Device Research Conference (ESSDERC), Sevilla; 14.09.2010 - 16.09.2010; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-1-4244-6660-3; S. 297 - 300. | |
| 976. | Stanojevic, Z., Baumgartner, O., Sverdlov, V., Kosina, H.: Subband Structure of Silicon Nanowires from the Hensel-Hasegawa-Nakayama Model Vortrag: International Conference on Ultimate Integration of Silicon (ULIS), Glasgow, Scotland; 18.03.2010 - 19.03.2010; in: "Proceedings of the 11th International Conference on Ultimate Integration o Silicon", (2010), S. 69 - 72. | |
| 975. | Rupp, K.: Symbolic Integration at Compile Time in Finite Element Methods Vortrag: International Symposium on Symbolic and Algebraic Computation (ISSAC), Munich; 25.07.2010 - 28.07.2010; in: "Proceedings of the 2010 International Symposium on Symbolic and Algebraic Computation", (2010), S. 347 - 354. | |
| 974. | Rupp, K., Grasser, T., Jüngel, A.: System Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 06.09.2010 - 08.09.2010; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2; S. 159 - 162. https://doi.org/10.1109/SISPAD.2010.5604542 | |
| 973. | Toledano-Luque, M., Kaczer, B., Roussel, Ph. J., Grasser, T., Groeseneken, G.: Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature Stress Vortrag: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 28.06.2010 - 30.06.2010; in: "Book of Abstracts", (2010), S. 28. | |
| 972. | Pourfath, M., Yazdanpanah Goharrizi, A., Kosina, H.: The Effect of Line-Edge Roughness on the Electronic Properties of Graphene Nano-Ribbons Vortrag: Ψk - 2010 Conference, Berlin; 12.09.2010 - 16.09.2010; in: "Abstract Book", (2010), S. 419. | |
| 971. | Reisinger, H., Grasser, T., Hofmann, K., Gustin, W., Schlünder, C.: The Impact of Recovery on BTI Reliability Assessments Vortrag: IEEE International Integrated Reliability Workshop, California; 17.10.2010 - 21.10.2010; in: "Final Report of IEEE International Integrated Reliability Workshop", (2010), S. 12 - 16. https://doi.org/10.1109/IIRW.2010.5706474 | |
| 970. | Reisinger, H., Grasser, T., Schlunder, C., Gustin, W.: The Statistical Analysis of Individual Defects constituting NBTI and its Implications for Modeling DC- and AC-Stress Vortrag: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0; S. 7 - 15. | |
| 969. | Grasser, T., Reisinger, H., Wagner, P., Kaczer, B., Schanovsky, F., Gös, W.: The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability Vortrag: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0; S. 16 - 25. | |
| 968. | Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H.: Thermal Properties of Graphene Antidots Poster: Nanoelectronics Days 2010, Aachen; 04.10.2010 - 07.10.2010; in: "Abstract Book of the Nanoelectronics Days 2010", (2010), S. 102. | |
| 967. | Neophytou, N., Kosina, H.: Thermoelectric Properties of Scaled Silicon Nanostructures Using the sp3d5s*-SO Atomistic Tight-Binding Model Vortrag: 29th International Conference on Thermoelectrics, Shanghai; 30.05.2010 - 03.06.2010; in: "Proceedings of the 29th International Conference on Thermoelectrics", (2010), S. 71. | |
| 966. | Ertl, O., Filipovic, L., Selberherr, S.: Three-Dimensional Simulation of Focused Ion Beam Processing Using the Level Set Method Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 06.09.2010 - 08.09.2010; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7700-5; S. 49 - 52. https://doi.org/10.1109/SISPAD.2010.5604573 | |
| 965. | Pourfath, M., Sverdlov, V., Selberherr, S.: Transport Modeling for Nanoscale Semiconductor Devices Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Shanghai (eingeladen); 01.11.2010 - 04.11.2010; in: "Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", 4 (2010), ISBN: 978-1-4244-5799-1; S. 1737 - 1740. | |
| 964. | Rupp, K., Rudolf, F., Weinbub, J.: ViennaCL - A High Level Linear Algebra Library for GPUs and Multi-Core CPUs Vortrag: International Workshop on GPUs and Scientific Applications (GPUScA 2010), Vienna; 11.09.2010; in: "Proceedings of the International Workshop on GPUs and Scientific Applications (GPUScA 2010)", (2010), S. 51 - 56. | |
| 963. | Weinbub, J., Rupp, K., Selberherr, S.: ViennaIPD - An Input Control Language for Scientific Computing Vortrag: Industrial Simulation Conference (ISC), Budapest; 07.06.2010 - 09.06.2010; in: "Proceedings of the Industrial Simulation Conference", (2010), ISBN: 978-90-77381-5-57; S. 34 - 38. | |
| 962. | Ertl, O., Selberherr, S.: A Fast Void Detection Algorithm for Three-Dimensional Deposition Simulation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8; S. 174 - 177. https://doi.org/10.1109/SISPAD.2009.5290221 | |
| 961. | Sonderfeld, R., Heinzl, R.: A Generic and Self-Optimizing Polynomial Library Vortrag: European Conference on Object-Oriented Programming, Genova; 07.07.2009; in: "Proceedings of the 8th workshop on Parallel/High-Performance", (2009), ISBN: 978-1-60558-547-5. | |
| 960. | Gös, W., Grasser, T., Karner, M., Kaczer, B.: A Model for Switching Traps in Amorphous Oxides Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8; S. 159 - 162. https://doi.org/10.1109/SISPAD.2009.5290226 | |
| 959. | Vitanov, S., Palankovski, V., Maroldt, S., Quay, R.: A Simulation Study of Enhancement-Mode AlGaN/GaN HEMTs with Recessed Gates Vortrag: European Workshop on Heterostructure Technology, Guenzburg/Ulm; 02.11.2009 - 04.11.2009; in: "HETECH 2009 Book of Abstracts", (2009), S. 109 - 110. | |
| 958. | Reisinger, H., Grasser, T., Schlünder, C.: A Study of NBTI by the Statistical Analysis of the Properties of Individual Defects in pMOSFETS Vortrag: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 18.10.2009 - 22.10.2009; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8; S. 30 - 35. | |
| 957. | Grasser, T., Kaczer, B., Gös, W., Aichinger, T., Hehenberger, Ph., Nelhiebel, M.: A Two-Stage Model for Negative Bias Temperature Instability Vortrag: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), S. 33 - 44. | |
| 956. | Vasicek, M.: Advanced Macroscopic Transport Models Vortrag: Quantum Systems and Devices: Analysis, Simulations, Applications, Beijing (eingeladen); 20.04.2009 - 24.04.2009; in: "Quantum Systems and Devices: Analysis, Simulations, Applications", (2009), S. 32. | |
| 955. | Neophytou, N., Wagner, M., Kosina, H., Selberherr, S.: Analysis of Thermoelectric Properties of Scaled Silicon Nanostructures using an Atomistic Thight-Binding Model Vortrag: 28th International Conference/7th European Conference on Thermoelectrics, Freiburg; 26.07.2009 - 30.07.2009; in: "Book of Abstracts", (2009), S. 91. | |
| 954. | Bindu, B., Gös, W., Kaczer, B., Grasser, T.: Analytical Solution of the Switching Trap Model for Negative Bias Temperature Stress Vortrag: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 18.10.2009 - 22.10.2009; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8; S. 93 - 96. | |
| 953. | Pourfath, M., Kosina, H.: Carbon Based Electronics: A Computational Study Vortrag: Quantum Systems and Devices: Analysis, Simulations, Applications, Beijing (eingeladen); 20.04.2009 - 24.04.2009; in: "Quantum Systems and Devices: Analysis, Simulations, Applications", (2009), S. 18. | |
| 952. | Pourfath, M., Selberherr, S.: Carbon-Based Electronics: A Computational Study Vortrag: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Delhi (eingeladen); 15.12.2009 - 19.12.2009; in: "Proceedings of the International Workshop on the Physics of Semiconductor Devices (IWPSD)", (2009), 6 S. | |
| 951. | Schwaha, P., Baumgartner, O., Heinzl, R., Nedjalkov, M., Selberherr, S., Dimov, I.: Classical Approximation of the Scattering Induced Wigner Correction Equation Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3; S. 177 - 180. https://doi.org/10.1109/IWCE.2009.5091092 | |
| 950. | Hehenberger, Ph., Wagner, P.-J., Reisinger, H., Grasser, T.: Comparison of Fast Measurement Methods for Short-Term Negative Bias Temperature Stress and Relaxation Vortrag: European Solid-State Device Research Conference (ESSDERC), Athens; 14.09.2009 - 18.09.2009; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2009), ISBN: 978-1-4244-4351-2; S. 311 - 314. | |
| 949. | Schwaha, P., Cervenka, J., Nedjalkov, M., Gurov, T., Arsov, G., Misev, A., Zoric, A., Ilic, S.: Computational Electronics on GRID: A Mixed Mode Carrier Transport Model Vortrag: International Conference On Applications Of Mathematics In Technical And Natural Sciences, Sozopol (Bulgaria); 22.06.2009 - 27.06.2009; in: "1st International Conference On Applications Of Mathematics In Technical And Natural Sciences", 1186 (2009), ISBN: 978-0-7354-0752-7; S. 206 - 214. https://doi.org/10.1063/1.3265331 | |
| 948. | Ceric, H., Orio, R., Cervenka, J., Selberherr, S.: Copper Microstructure Impact on Evolution of Electromigration Induced Voids Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8; S. 178 - 181. https://doi.org/10.1109/SISPAD.2009.5290222 | |
| 947. | Grasser, T., Kaczer, B.: Critical Modeling Issues in Negative Bias Temperature Instability Vortrag: 215th ECS Meeting, San Francisco (eingeladen); 24.05.2009 - 29.05.2009; in: "Meeting Abstracts MA 2009-01", (2009), ISSN: 1091-8213; S. 793. | |
| 946. | Heinzl, R.: Data Structure Properties for Scientific Computing: An Algebraic Topology Library Vortrag: European Conference on Object-Oriented Programming, Genova; 07.07.2009; in: "Proceedings of the 8th workshop on Parallel/High-Performance", (2009), ISBN: 978-1-60558-547-5. | |
| 945. | Neophytou, N., Kosina, H., Selberherr, S., Klimeck, G.: Dependence of Injection Velocity and Capacitance of Si Nanowires on Diameter, Orientation, and Gate Bias: An Atomistic Tight-Binding Study Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8; S. 71 - 74. https://doi.org/10.1109/SISPAD.2009.5290245 | |
| 944. | Tyaginov, S. E., Gös, W., Grasser, T., Sverdlov, V., Schwaha, P., Heinzl, R., Stimpfl, F.: Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole Crystal Vortrag: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), S. 514 - 522. | |
| 943. | Hehenberger, Ph., Aichinger, T., Grasser, T., Gös, W., Triebl, O., Kaczer, B., Nelhiebel, M.: Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement Technique Poster: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), S. 1033 - 1038. | |
| 942. | Orio, R., Ceric, H., Cervenka, J., Selberherr, S.: Electromigration Failure Development in Modern Dual-Damascene Interconnects Vortrag: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 12.10.2009 - 14.10.2009; in: "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", 15 (2009), ISBN: 978-3-90188-237-1; 5 S. | |
| 941. | Sverdlov, V., Windbacher, T., Baumgartner, O., Selberherr, S.: Electron Subband Structure and Valley Splitting in Silicon Ultra-Thin Body SOI Structures from the Two-Band k.p Model Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Göteborg; 19.01.2009 - 21.01.2009; in: "EUROSOI 2009 Conference Proceedings", (2009), S. 81 - 82. | |
| 940. | Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovski, F., Selberherr, S.: Enhanced by Shear Strain Splitting of Unprimed Subbands in (001) Silicon Films and Point Contacts Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Cracow; 07.07.2009 - 11.07.2009; in: "Abstracts of the International Conference on Spintronics and Quantum Information Technology (SPINTECH)", (2009), S. 301. | |
| 939. | Starkov, I., Tyaginov, S. E., Grasser, T.: Green´s Function Asymptotic in Two-Layered Periodic Medium Vortrag: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 22.06.2009 - 26.06.2009; in: "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), S. 111 - 112. | |
| 938. | Vitanov, S., Palankovski, V., Maroldt, S., Quay, R.: High-Temperature Modeling of AlGaN/GaN HEMTs Vortrag: International Semiconductor Device Research Symposium (ISDRS), Maryland; 09.12.2009 - 11.12.2009; in: "2009 International Semiconductor Device Research Symposium", (2009), ISBN: 978-1-4244-6031-1; 2 S. https://doi.org/10.1109/ISDRS.2009.5378300 | |
| 937. | Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., Selberherr, S.: Impact of Confinement and Stress on the Subband Parameters in Ultra-Thin Silicon Films Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 31.08.2009 - 03.09.2009; in: "ECS Transactions", (2009), ISBN: 978-1-56677-737-7; S. 389 - 396. | |
| 936. | Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., Selberherr, S.: Impact of Confinement of Semiconductor and Band Engineering on Future Device Performance Vortrag: Meeting of the Electrochemical Society, Silicon-on-Insulator Technology and Devices, San Francisco (eingeladen); 24.05.2009 - 29.05.2009; in: "215th ECS Meeting", 19/4 (2009), ISBN: 978-1-56677-712-4; S. 15 - 26. | |
| 935. | Tyaginov, S. E., Sverdlov, V., Gös, W., Grasser, T.: Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 05.10.2009 - 09.10.2009; in: "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009). | |
| 934. | Tyaginov, S. E., Sverdlov, V., Gös, W., Schwaha, P., Heinzl, R., Stimpfl, F., Grasser, T.: Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics Vortrag: Materials Research Society Spring Meeting (MRS), San Francisco; 13.04.2009 - 17.04.2009; in: "Proceedings of the 2009 MRS Spring Meeting", (2009). | |
| 933. | Vitanov, S., Palankovski, V.: Influence of the Gate Recess on the Performance of Enhancement-Mode AlGaN/GaN HEMTs Vortrag: International Scientific and Applied Science Conference (ET), Sozopol; 14.09.2009 - 17.09.2009; in: "Annual Journal of Electronics", (2009), ISSN: 1313-1842; S. 144 - 147. | |
| 932. | Pourfath, M., Selberherr, S.: Modeling Optical Sensors Based on Carbon Nanotubes Vortrag: International Symposium on Microwave and Optical Technology (ISMOT), New Delhi (eingeladen); 16.12.2009 - 19.12.2009; in: "Proceedings of the International Symposium on Microwave and Optical Technology (ISMOT)", (2009), S. 1381 - 1384. | |
| 931. | Sverdlov, V., Baumgartner, O., Windbacher, T., Selberherr, S.: Modeling Techniques for Strained CMOS Technology Vortrag: Meeting of the Electrochemical Society, ULSI Process Integration, Vienna (eingeladen); 04.10.2009 - 09.10.2009; in: "216th ECS Meeting", (2009), ISBN: 978-1-56677-744-5; S. 3 - 18. | |
| 930. | Windbacher, T., Sverdlov, V., Selberherr, S.: Modeling of Low Concentrated Buffer DNA Detection with Suspend Gate Field-Effect Transistors (SGFET) Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3; S. 169 - 172. https://doi.org/10.1109/IWCE.2009.5091122 | |
| 929. | Kaczer, B., Grasser, T., Martin-Martinez, J., Simoen, E., Aoulaiche, M., Roussel, Ph. J., Groeseneken, G.: NBTI from the Perspective of Defect States with Widely Distributed Time Scales Vortrag: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), S. 55 - 60. | |
| 928. | Milovanovic, G., Kosina, H.: Nonparabolicity Effects in Quantum Cascade Lasers Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3; S. 189 - 192. https://doi.org/10.1109/IWCE.2009.5091129 | |
| 927. | Baumgartner, O., Karner, M., Sverdlov, V., Kosina, H.: Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB Devices Vortrag: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3; S. 53 - 56. https://doi.org/10.1109/IWCE.2009.5091131 | |
| 926. | Baumgartner, O., Karner, M., Sverdlov, V., Kosina, H.: Numerical Study of the Electron Subband Structure in Strained Silicon UTB Devices Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Göteborg; 19.01.2009 - 21.01.2009; in: "EUROSOI 2009 Conference Proceedings", (2009), S. 57 - 58. | |
| 925. | Aichinger, T., Nelhiebel, M., Grasser, T.: On the Temperature Dependence of NBTI Recovery Vortrag: International Reliability Physics Symposium (IRPS), Montreal (eingeladen); 26.04.2009 - 30.04.2009; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), S. 1. | |
| 924. | Hehenberger, Ph., Wagner, P.-J., Reisinger, H., Grasser, T.: On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 05.10.2009 - 09.10.2009; in: "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009), 4 S. | |
| 923. | Southwick III, R., Knowlton, B., Kaczer, B., Grasser, T.: On the Thermal Activation of Negative Bias Temperature Instability Vortrag: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 18.10.2009 - 22.10.2009; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8; S. 36 - 41. | |
| 922. | Nedjalkov, M., Schwaha, P., Baumgartner, O., Selberherr, S.: Particle Model of the Scattering-Induced Wigner Function Correction Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 04.06.2009 - 08.06.2009; in: "Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC)", (2009), S. 79. | |
| 921. | Pourfath, M., Baumgartner, O., Kosina, H., Selberherr, S.: Performance Evaluation of Graphene Nanoribbon Infrared Photodetectors Vortrag: Numerical Simulation of Optoelectronic Devices (NUSOD), Gwangju; 14.09.2009 - 17.09.2009; in: "Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices", (2009), ISBN: 978-1-4244-4180-8; S. 13 - 14. | |
| 920. | Sverdlov, V., Baumgartner, O., Windbacher, T., Selberherr, S.: Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Ultra-Thin Films Vortrag: 2009 Silicon Nanoelectronics Workshop, Kyoto; 13.06.2009 - 14.06.2009; in: "Proceedings of 2009 Silicon Nanoelectronics Workshop", (2009), S. 95 - 96. | |
| 919. | Wagner, P.-J., Aichinger, T., Grasser, T., Nelhiebel, M., Vandamme, L.K.J.: Possible Correlation between Flicker Noise and Bias Temperature Stress Vortrag: International Conference on Noise and Fluctuations (ICNF), Pisa; 14.06.2009 - 19.06.2009; in: "Proceedings of the 20th International Conference on Noise and Fluctuations", (2009), S. 621 - 624. | |
| 918. | Neophytou, N., Kosina, H., Rakshit, T.: Quantum Transport Simulations of InGaAs HEMTs: Influence of Mass Variations on the Device Performance Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3; S. 161 - 164. https://doi.org/10.1109/IWCE.2009.5091141 | |
| 917. | Sverdlov, V., Selberherr, S.: Scaling of Advanced Floating Body Z-RAM Storage Cells: A Modeling Approach Poster: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 12.10.2009 - 14.10.2009; in: "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", 21 (2009), ISBN: 978-3-90188-237-1; 4 S. | |
| 916. | Tyaginov, S. E., Sverdlov, V., Gös, W., Schwaha, P., Heinzl, R., Stimpfl, F., Grasser, T.: Si-O Bond-Breakage Energetics under Consideration of the Whole Crystal Vortrag: International Semiconductor Technology Conference & China Semiconductor Technology International Conference, Shanghai; 19.03.2009 - 20.03.2009; in: "Proceedings of the International Semiconductor Technology Conference & China Semiconductor Technology International Conference", (2009), S. 84. | |
| 915. | Sverdlov, V., Baumgartner, O., Windbacher, T., Selberherr, S.: Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting Poster: Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads, Sardinia; 14.06.2009 - 19.06.2009; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads", (2009), S. 58. | |
| 914. | Milovanovic, G., Baumgartner, O., Kosina, H.: Simulation of Quantum Cascade Lasers using Robin Boundary Conditions Vortrag: Numerical Simulation of Optoelectronic Devices (NUSOD), Gwangju; 14.09.2009 - 17.09.2009; in: "Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices", (2009), ISBN: 978-1-4244-4180-8; S. 7 - 8. | |
| 913. | Tyaginov, S. E., Sverdlov, V., Gös, W., Grasser, T.: Statistics of Si-O Bond-Breakage Rate Variations induced by O-Si-O Angle Fluctuations Vortrag: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3; S. 29 - 32. https://doi.org/10.1109/IWCE.2009.5091156 | |
| 912. | Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., Ringhofer, Ch.: Study of the Properties of Biotin-Streptavidin Sensitive BioFETs Vortrag: 2nd International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC), Porto, Portugal; 14.01.2009 - 17.01.2009; in: "Proceedings of the International Conference on Biomedical Electronics and Devices (BIODEVICES)", (2009), ISBN: 978-989-8111-72-2; S. 24 - 30. | |
| 911. | Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., Ringhofer, Ch.: Study of the Properties of Biotin-Streptavidin Sensitive Biofets Vortrag: 2nd International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC), Porto; 14.01.2009 - 17.01.2009; in: "Final Program and Book of Abstracts", (2009), S. 42. | |
| 910. | Sverdlov, V., Baumgartner, O., Selberherr, S.: Subband Parameters in Strained (110) Silicon Films from the Hensel-Hasegawa-Nakayama Model of the Conduction Band Vortrag: International Semiconductor Device Research Symposium (ISDRS), College Park; 09.12.2009 - 11.12.2009; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS)", (2009), ISBN: 978-1-4244-6031-1; S. TP6-03.1 - 2. | |
| 909. | Sverdlov, V., Baumgartner, O., Tyaginov, S. E., Windbacher, T., Selberherr, S.: Subband Structure in Ultra-Thin Silicon Films Vortrag: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 22.06.2009 - 26.06.2009; in: "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), S. 62 - 63. | |
| 908. | Grasser, T., Reisinger, H., Gös, W., Aichinger, T., Hehenberger, Ph., Wagner, P.-J., Nelhiebel, M., Franco, J., Kaczer, B.: Switching Oxide Traps as the Missing Link Between Negative Bias Temperature Instability and Random Telegraph Noise Vortrag: IEEE International Electron Devices Meeting (IEDM), Baltimore, MD, USA; 07.12.2009 - 09.12.2009; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2009), S. 1 - 4. https://doi.org/10.1109/IEDM.2009.5424235 | |
| 907. | Orio, R., Ceric, H., Cervenka, J., Selberherr, S.: The Effect of Copper Grain Size Statistics on the Electromigration Lifetime Distribution Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8; S. 182 - 185. https://doi.org/10.1109/SISPAD.2009.5290219 | |
| 906. | Ceric, H., Orio, R., Cervenka, J., Selberherr, S.: The Effect of Microstructure on Electromigration Induced Voids Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 06.07.2009 - 10.07.2009; in: "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2009), ISBN: 9781-4244-3912-6; S. 694 - 697. | |
| 905. | Orio, R., Ceric, H., Cervenka, J., Selberherr, S.: The Effect of Microstructure on Electromigration-Induced Failure Development Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 31.08.2009 - 03.09.2009; in: "ECS Transactions", (2009), ISBN: 978-1-56677-737-7; S. 345 - 352. | |
| 904. | Orio, R., Ceric, H., Cervenka, J., Selberherr, S.: The Effect of Microstructure on the Electromigration Lifetime Distribution Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 06.07.2009 - 10.07.2009; in: "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2009)", (2009), S. 731 - 734. | |
| 903. | Schwaha, P., Heinzl, R., Nedjalkov, M.: The Forced Evolution of Implementations: Using a Monte Carlo Algorithm as Example Vortrag: European Conference on Object-Oriented Programming, Genova; 07.07.2009; in: "Proceedings of the 8th workshop on Parallel/High-Performance", (2009), ISBN: 978-1-60558-547-5. | |
| 902. | Sverdlov, V., Baumgartner, O., Kosina, H., Selberherr, S., Schanovsky, F., Esseni, D.: The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers Vortrag: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3; S. 49 - 52. https://doi.org/10.1109/IWCE.2009.5091158 | |
| 901. | Pourfath, M., Kosina, H., Selberherr, S.: Theoretical Study of Graphene Nanoribbon Photo-Detectors Vortrag: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kaanapali; 30.11.2009 - 04.12.2009; in: "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2009), S. 178 - 179. | |
| 900. | Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., Selberherr, S.: Thickness Dependence of the Effective Masses in a Strained Thin Silicon Film Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8; S. 51 - 54. https://doi.org/10.1109/SISPAD.2009.5290252 | |
| 899. | Ertl, O., Selberherr, S.: Three-Dimensional Plasma Etching Simulation using Advanced Ray Tracing and Level Set Techniques Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 31.08.2009 - 03.09.2009; in: "ECS Transactions", (2009), ISBN: 978-1-56677-737-7; S. 61 - 68. | |
| 898. | Kosina, H.: Transport Modeling for Nanowires and Nanotubes Vortrag: Final FoNE Conference, Miraflores de la Sierra, Madrid; 09.09.2009 - 13.09.2009; in: "Proceedings of the Final FoNE Conference", (2009), S. 35. | |
| 897. | Sverdlov, V., Vasicek, M., Cervenka, J., Grasser, T., Kosina, H., Selberherr, S.: Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 04.06.2009 - 08.06.2009; in: "Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC)", (2009), S. 93. | |
| 896. | Aichinger, T., Nelhiebel, M., Grasser, T.: Unambiguous Identification of the NBTI Recovery Mechanism using Ultra-Fast Temperature Changes Vortrag: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), S. 2 - 7. | |
| 895. | Sverdlov, V., Windbacher, T., Baumgartner, O., Schanovsky, F., Selberherr, S.: Valley Splitting in Thin Silicon Films from a Two-Band k·p Model Poster: International Conference on Ultimate Integration of Silicon (ULIS), Aachen; 18.03.2009 - 20.03.2009; in: "Proceedings of the 10th International Conference on Ultimate Integration of Silicon", (2009), S. 277 - 280. | |
| 894. | Ryan, J., Lenahan, P., Grasser, T., Enichlmair, H.: What Triggers NBTI? An "On The Fly" Electron Spin Resonance Approach Vortrag: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 18.10.2009 - 22.10.2009; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8; S. 42 - 45. | |
| 893. | Stimpfl, F., Heinzl, R., Schwaha, P., Selberherr, S.: A Delaunay Mesh Generation Approach without the Use of Convex Hulls Vortrag: Intl. Conf. on Numerical Geometry, Grid Generation and Scientific Computing (Numgrid), Moscow, Russia; 10.06.2008 - 13.06.2008; in: "Proceedings Intl. Conf.on Numerical Geometry, Grid Generation and Scientific Computing", (2008), 2 S. | |
| 892. | Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C.: A General Bottom-Up Modeling Approach for BioFETs Poster: 2. Internationale Konferenz NanoSens2008, Vienna; 29.09.2008 - 30.09.2008; in: "Abstracts Conf.on Nanosensors for Industrial Applications (NANOSENS)", (2008). | |
| 891. | Yazdanpanah Goharrizi, A., Pourfath, M., Fathipour, M., Kosina, H., Selberherr, S.: A Numerical Study of Graphene Nano-Ribbon based Resonant Tunneling Diodes Vortrag: International Symposium on Graphene Devices: Technology, Physics, and Modeling (ISGD), Japan; 17.11.2008 - 19.11.2008; in: "International Symposium on Graphene Devices: Technology, Physics, and Modeling", (2008), S. 66 - 67. | |
| 890. | Schwaha, P., Stimpfl, F., Heinzl, R., Selberherr, S.: A Parallel Delaunay and Advancing Front Mesh Generation Approach Vortrag: Intl. Conf. on Numerical Geometry, Grid Generation and Scientific Computing (Numgrid), Moscow, Russia; 10.06.2008 - 13.06.2008; in: "Proceedings Intl. Conf.on Numerical Geometry, Grid Generation and Scientific Computing", (2008), 2 S. | |
| 889. | Heinzl, R., Schwaha, P., Stimpfl, F., Selberherr, S.: A Parallel Generic Scientific Simulation Environment Vortrag: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Trondheim; 13.05.2008 - 16.05.2008; in: "Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing", (2008). | |
| 888. | Gös, W., Karner, M., Sverdlov, V., Grasser, T.: A Rigorous Model for Trapping and Detrapping in Thin Gate Dielectrics Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 07.07.2008 - 11.07.2008; in: "Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1; S. 249 - 254. | |
| 887. | Stimpfl, F., Heinzl, R., Schwaha, P., Selberherr, S.: A Robust Parallel Delaunay Mesh Generation Approach Suitable for Three-Dimensional TCAD Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 265 - 268. https://doi.org/10.1109/SISPAD.2008.4648288 | |
| 886. | Grasser, T., Kaczer, B., Gös, W.: An Energy-Level Perspective of Bias Temperature Instability Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht (eingeladen); 29.09.2008 - 02.10.2008; in: "Proceedings of the 19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2008). | |
| 885. | Grasser, T., Kaczer, B., Gös, W.: An Energy-Level Perspective of Bias Temperature Instability Vortrag: International Reliability Physics Symposium (IRPS), Phoenix; 27.04.2008 - 01.05.2008; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2008), S. 28 - 38. | |
| 884. | Pourfath, M., Selberherr, S.: Analysis of Carbon Nanotube Photo-Detectors Vortrag: Advanced Heterostructures and Nanostructures Workshop (AHNW), Kona (eingeladen); 07.12.2008 - 12.12.2008; in: "Abstracts Advanced Heterostructures and Nanostructures Workshop (AHNW)", (2008), S. TU-06. | |
| 883. | Orio, R., Carniello, S., Ceric, H., Selberherr, S.: Analysis of Electromigration in Dual-Damascene Interconnect Structures Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Gramado; 01.09.2008 - 04.09.2008; in: "ECS Transactions", (2008), ISBN: 978-1-56677-646-2; S. 337 - 348. | |
| 882. | Orio, R., Ceric, H., Carniello, S., Selberherr, S.: Analysis of Electromigration in Redundant Vias Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 237 - 240. https://doi.org/10.1109/SISPAD.2008.4648281 | |
| 881. | Ceric, H., Orio, R., Cervenka, J., Selberherr, S.: Analysis of Microstructure Impact on Electromigration Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 241 - 244. https://doi.org/10.1109/SISPAD.2008.4648282 | |
| 880. | Poschalko, C., Selberherr, S.: Calculation of the Radiation from the Slot of a Slim Enclosure with a Cavity Resonator Model Vortrag: International Zurich Symposium on Electromagnetic Compatibility, Singapore; 19.05.2008 - 22.05.2008; in: "19th International Zurich Symposium on Electromagnetic Compatibility,", (2008), S. 634 - 637. | |
| 879. | Ceric, H., Orio, R., Selberherr, S.: Comprehensive Modeling of Electromigration Induced Interconnect Degradation Mechanisms Vortrag: International Conference on Microelectronics (MIEL), Nis (eingeladen); 11.05.2008 - 14.05.2008; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2008), ISBN: 978-1-4244-1881-7; S. 69 - 76. https://doi.org/10.1109/ICMEL.2008.4559225 | |
| 878. | Vasicek, M., Cervenka, J., Karner, M., Grasser, T.: Consistent Higher-Order Transport Models for SOI MOSFETs Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 129 - 132. https://doi.org/10.1109/SISPAD.2008.4648254 | |
| 877. | Baumgartner, O., Schwaha, P., Karner, M., Nedjalkov, M., Selberherr, S.: Coupling of Non-Equilibrium Green's Function and Wigner Function Approaches Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 345 - 348. https://doi.org/10.1109/SISPAD.2008.4648308 | |
| 876. | Pourfath, M., Kosina, H., Selberherr, S.: Current Transport in Carbon Nanotube Transistors Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Beijing (eingeladen); 20.10.2008 - 23.10.2008; in: "The 9th Internationl Conference on Solid-State and Integrated-Circuit Technology", (2008), ISBN: 978-1-4244-2186-2; S. 361 - 364. | |
| 875. | Pourfath, M., Selberherr, S.: Current Transport in Carbon Nanotube Transistors Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Cancun (eingeladen); 28.04.2008 - 30.04.2008; in: "Proceedings of the 7th International Caribbean Conference on Devices, Circuits and Systems", (2008), ISBN: 978-1-4244-1957-9; 6 S. | |
| 874. | Grasser, T., Kaczer, B., Aichinger, T., Gös, W., Nelhiebel, M.: Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks Vortrag: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 18.10.2008 - 22.10.2008; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2008), S. 91 - 95. | |
| 873. | Poschalko, C., Selberherr, S.: Domain Separation with Port Interfaces for Calculation of Emissions from Enclosure Slots Vortrag: International Symposium on Electromagnetic Compatibility (EMC), Detroit; 18.08.2008 - 22.08.2008; in: "Proceedings International Symposium on Electromagnetic Compatibility", 1113 (2008), ISBN: 978-1-4244-1699-8. https://doi.org/10.1109/ISEMC.2008.4652083 | |
| 872. | Tyaginov, S. E., Vexler, M., El Hdiy, A., Gacem, K., Zaporojtchenko, V.: Electrical Methods for Estimating the Correlation Length of Insulator Thickness Fluctuations in MIS Tunnel Structures Poster: Workshop on Dielectrics in Microelectronics (WODIM), Berlin; 23.06.2008 - 25.06.2008; in: "15th Workshop on Dielectrics in Microelectronics", (2008), S. 227 - 228. | |
| 871. | Sverdlov, V., Kosina, H., Selberherr, S.: Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond Vortrag: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Cork; 23.01.2008 - 25.01.2008; in: "Proceedings of the 4th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2008), S. 41 - 42. | |
| 870. | Vitanov, S., Palankovski, V.: Enhancement Mode HEMTs: Evaluation of Two Approaches by Numerical Simulation Vortrag: Junior Scientist Conference 2008, Technische Universität Wien; 17.11.2008 - 18.11.2008; in: "Junior Scientist Conference Proceedings", (2008), ISBN: 978-3-200-01612-5; S. 221 - 222. | |
| 869. | Stimpfl, F., Heinzl, R., Schwaha, P., Selberherr, S.: High Performance Parallel Mesh Generation and Adaption Vortrag: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Trondheim; 13.05.2008 - 16.05.2008; in: "Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing", (2008). | |
| 868. | Gös, W., Karner, M., Tyaginov, S. E., Hehenberger, Ph., Grasser, T.: Level Shifts and Gate Interfaces as Vital Ingredients in Modeling of Charge Trapping Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 69 - 72. https://doi.org/10.1109/SISPAD.2008.4648239 | |
| 867. | Sverdlov, V., Windbacher, T., Selberherr, S.: Mobility Enhancement in Thin Silicon Films: Strain and Thickness Dependences of the Effective Masses and Non-Parabolicity Parameter Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 145 - 148. https://doi.org/10.1109/SISPAD.2008.4648258 | |
| 866. | Sverdlov, V., Selberherr, S.: Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Gramado; 01.09.2008 - 04.09.2008; in: "ECS Transactions", (2008), ISBN: 978-1-56677-646-2; S. 159 - 168. | |
| 865. | Grasser, T., Gös, W., Kaczer, B.: Modeling Bias Temperature Instability During Stress and Recovery Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 65 - 68. https://doi.org/10.1109/SISPAD.2008.4648238 | |
| 864. | Pourfath, M., Selberherr, S.: Modeling Current Transport in Carbon Nanotube Transistors Vortrag: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong (eingeladen); 08.12.2008 - 10.12.2008; in: "IEEE International Conference on Electron Devices and Solid-State Circuit 2008", (2008), ISBN: 978-1-4244-2540-2; 6 S. | |
| 863. | Sverdlov, V., Selberherr, S.: Modeling and Simulation of Advanced Floating Body Z-RAM Memory Cells Vortrag: European Simulation and Modeling Conference (ESMC), Le Havre; 27.10.2008 - 29.10.2008; in: "Proceedings European Simulation and Modeling Conference (ESM)", (2008), ISBN: 978-90-77381-44-1; S. 380 - 384. | |
| 862. | Baumgartner, O., Karner, M., Kosina, H.: Modeling of High-k-Metal-Gate-Stacks Using the Non-Equilibrium Green´s Function Formalism Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 353 - 356. https://doi.org/10.1109/SISPAD.2008.4648310 | |
| 861. | Sverdlov, V., Ungersboeck, E., Kosina, H. (2008). Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Effect Transistors: Role of Degeneracy and Intersubband Scattering. In Large-Scale Scientific Computing: 6th International Conference, LSSC 2007 (pp. 157–164), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-540-78827-0_16 (reposiTUm) | |
| 860. | Grasser, T.: Negative Bias Temperature Instability: Modeling Challenges and Perspectives Vortrag: International Reliability Physics Symposium (IRPS), Phoenix (Tutorial); 27.04.2008 - 01.05.2008; in: "2008 Reliability Physics Tutorial Notes", (2008), S. 113 - 120. | |
| 859. | Palankovski, V.: Novel High-Performance GaN Transistors Vortrag: Advanced Heterostructures and Nanostructures Workshop (AHNW), Kona (eingeladen); 07.12.2008 - 12.12.2008; in: "Abstracts Advanced Heterostructures and Nanostructures Workshop (AHNW)", (2008), S. MO-03. | |
| 858. | Pourfath, M., Kosina, H.: Numerical Study of Carbon Nanotube Infra-Red Photo-Detectors Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 81 - 84. https://doi.org/10.1109/SISPAD.2008.4648242 | |
| 857. | Pourfath, M., Baumgartner, O., Kosina, H.: On the Non-locality of the Electron-Photon Self-Energy: Application to Carbon Nanotube Photo-Detectors Vortrag: Numerical Simulation of Optoelectronic Devices (NUSOD), Nottingham; 01.09.2008 - 04.09.2008; in: "Proceedings of the 8^{th} International Conference on Numerical Simulation of Optoelectronic Devices", (2008), ISBN: 978-1-4244-2307-1; S. 99 - 100. https://doi.org/10.1109/NUSOD.2008.4668261 | |
| 856. | Pourfath, M., Sverdlov, V., Kosina, H.: On the Role of Off‐Diagonal Dephasing in Carbon Nanotube Based Photo‐Detectors Vortrag: 1st FoNE Conference Nanoelectronics 2008, Taormina, Italy; 29.06.2008 - 03.07.2008; in: "1st Fone Conference Nanoelectronics 2008", (2008), S. 41. | |
| 855. | Heinzl, R., Schwaha, P., Stimpfl, F., Selberherr, S.: Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment Vortrag: Workshop on Parallel Object-Oriented Scientific Computing (POOSC), Paphos; 08.07.2008; in: "7th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing (POOSC'08)", (2008), 5 S. | |
| 854. | Poschalko, C., Selberherr, S.: Radiated Emission from the Slot of a Slim Cubical Enclosure with Multiple Sources Inside Vortrag: International Symposium on Electromagnetic Compatibility (EMC), Hamburg; 08.09.2008 - 12.09.2008; in: "Proceedings of the 8th International Symposium on Electromagnetic Compatibility", (2008), ISBN: 978-3-930400-60-7; S. 109 - 114. | |
| 853. | Pourfath, M., Kosina, H., Selberherr, S.: Reduction of the Dark-Current in Carbon Nanotube Photo-Detectors Vortrag: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 15.09.2008 - 19.09.2008; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2008), S. 214 - 217. | |
| 852. | Vitanov, S., Palankovski, V.: Simulation of AlGaN/GaN HEMTs with InGaN Cap Layer Vortrag: International Scientific and Applied Science Conference (ET), Sozopol; 24.09.2008 - 26.09.2008; in: "The Seventeenth International Scientific and Applied Science Conference Electronics ET'2008 Proceedings of the Conference Book 4", (2008), ISSN: 1313-1842; S. 67 - 70. | |
| 851. | Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., Ringhofer, Ch.: Simulation of Field-Effect Biosensors (BioFETs) Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 193 - 196. https://doi.org/10.1109/SISPAD.2008.4648270 | |
| 850. | Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., Ringhofer, Ch.: Simulation of Field-Effect Biosensors (BioFETs) for Biotin-Streptavidin Complexes Poster: International Conference on Physics of Semiconductor (ICPS), Rio de Janeiro; 27.07.2008 - 01.08.2008; in: "PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors", (2008), ISBN: 978-0-7354-0736-7; S. 507 - 508. | |
| 849. | Sverdlov, V., Selberherr, S.: Strain-Controlled Valley Splitting in Si-SiGe Heterostructures Vortrag: International SiGe Technology and Device Meeting (ISTDM), Hsinchu; 11.05.2008 - 14.05.2008; in: "Abstract Book", (2008), S. 20 - 21. | |
| 848. | Ceric, H., Orio, R., Cervenka, J., Selberherr, S.: Stress-Induced Anisotropy of Electromigration in Copper Interconnects Vortrag: International Workshop on Stress-Induced Phenomena in Metallization, Austin; 05.11.2008 - 07.11.2008; in: "Proceedings of the Stress-Induced Phenomena in Metallization: 10th International Workshop", (2008), ISBN: 978-0-7354-0680-3; S. 56 - 62. | |
| 847. | Sverdlov, V., Windbacher, T., Kosina, H., Selberherr, S.: Stress-Induced Valley Splitting in Silicon Thin Films Vortrag: International Conference on Ultimate Integration of Silicon (ULIS), Udine; 12.03.2008 - 14.03.2008; in: "Proceedings of the 9th International Conference on Ultimate Integration on Silicon", (2008), ISBN: 978-1-4244-1730-8; S. 93 - 96. | |
| 846. | Schwaha, P., Heinzl, R., Stimpfl, F., Selberherr, S.: Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages Vortrag: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Trondheim; 13.05.2008 - 16.05.2008; in: "Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing", (2008). | |
| 845. | Schwaha, P., Heinzl, R., Stimpfl, F., Selberherr, S.: Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications Vortrag: Workshop on Parallel Object-Oriented Scientific Computing (POOSC), Paphos; 08.07.2008; in: "7th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing (POOSC'08)", (2008), 6 S. | |
| 844. | Vitanov, S., Palankovski, V., Pozzovivo, G., Kuzmik, J., Quay, R.: Systematical Study of InAlN/GaN Devices by Numerical Simulation Vortrag: European Workshop on Heterostructure Technology, Venice; 03.11.2008 - 05.11.2008; in: "HETECH 2008 Book of Abstracts", (2008), ISBN: 978-88-6129-296-3; S. 159 - 160. | |
| 843. | Ceric, H., Orio, R., Cervenka, J., Selberherr, S.: TCAD Solutions for Submicron Copper Interconnect Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 07.07.2008 - 11.07.2008; in: "Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1; S. 78 - 81. | |
| 842. | Reisinger, H., Vollertsen, R., Wagner, P.-J., Huttner, T., Martin, A., Aresu, S., Gustin, W., Grasser, T., Schlünder, C.: The Effect of Recovery on NBTI Characterization of Thick Non-Nitrided Oxides Vortrag: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 18.10.2008 - 22.10.2008; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2008), S. 1 - 6. | |
| 841. | Ertl, O., Selberherr, S.: Three-Dimensional Topography Simulation Using Advanced Level Set and Ray Tracing Methods Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 325 - 328. https://doi.org/10.1109/SISPAD.2008.4648303 | |
| 840. | Grasser, T.: Towards Understanding Negative Bias Temperature Instability in: "Integrated Reliability Workshop Final Report (12-16 Oct. 2008)", IEEE Conference Proceedings, 2008, S. 145. https://doi.org/10.1109/IRWS.2008.4796110 | |
| 839. | Vitanov, S., Vitanov, P., Palankovski, V.: Two-Dimensional Numerical Optimization of MIS Solar Cell on N-Type Silicon Poster: European Photovoltaic Solar Energy Conference, Valencia; 01.09.2008 - 05.09.2008; in: "23rd European Photovoltaic Solar Energy Conference", (2008), S. 1743 - 1745. | |
| 838. | Kaczer, B., Grasser, T., Roussel, Ph. J., Martin-Martinez, J., O´Connor, R., O´Sullivan, B., Groeseneken, G.: Ubiquitous Relaxation in BTI Stressing-New Evaluation and Insights Vortrag: International Reliability Physics Symposium (IRPS), Phoenix; 27.04.2008 - 01.05.2008; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2008), S. 20 - 27. | |
| 837. | Okhonin, S., Nagoga, M., Lee, C., Colinge, J., Afzalian, A., Yan, R., Akhavan, N., Xiong, W., Sverdlov, V., Selberherr, S., Mazure, C.: Ultra-Scaled Z-RAM Cell Vortrag: 2008 IEEE International SOI Conference, New Paltz; 06.10.2008 - 09.10.2008; in: "2008 IEEE International SOI Conference Proceedings", (2008), ISBN: 978-1-4244-1954-8; S. 157 - 158. | |
| 836. | Milovanovic, G., Kosina, H.: Valence Band Deformation Potentials in Semiconductors Poster: International SiGe Technology and Device Meeting (ISTDM), Hsinchu; 11.05.2008 - 14.05.2008; in: "Abstract Book", (2008), S. 215 - 216. | |
| 835. | Vasicek, M., Cervenka, J., Wagner, M., Karner, M., Grasser, T.: A 2D-Non-Parabolic Six Moments Model Vortrag: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in: "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3; 2 S. | |
| 834. | Schwaha, P., Heinzl, R., Mach, G., Pogoreutz, C., Fister, S., Selberherr, S.: A High Performance Webapplication for an Electro-Biological Problem Vortrag: 21st European Conference on Modelling and Simulation, Prag; 04.06.2007 - 06.06.2007; in: "Proceedings 21st European Conference on Modelling and Simulation", (2007), ISBN: 978-0-9553018-2-7; S. 218 - 222. https://doi.org/10.7148/2007-0218 | |
| 833. | Stimpfl, F., Heinzl, R., Schwaha, P., Selberherr, S.: A Multi-Mode Mesh Generation Approach for Scientific Computing Vortrag: The European Simulation and Modelling Conference (ESM), Malta; 22.10.2007 - 24.10.2007; in: "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6; S. 506 - 513. | |
| 832. | Heinzl, R., Mach, G., Schwaha, P., Selberherr, S.: A Performance Test Platform Vortrag: The European Simulation and Modelling Conference (ESM), Malta; 22.10.2007 - 24.10.2007; in: "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6; S. 483 - 487. | |
| 831. | Grasser, T., Wagner, P.-J., Hehenberger, Ph., Gös, W., Kaczer, B.: A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability Vortrag: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 15.10.2007 - 18.10.2007; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2007), ISBN: 1-4244-1171-8; S. 6 - 11. | |
| 830. | Baumgartner, O., Karner, M., Holzer, S., Pourfath, M., Grasser, T., Kosina, H.: Adaptive Energy Integration of Non-Equilibrium Green´s Functions Poster: The Nanotechnology Conference and Trade Show, Santa Clara; 19.05.2007 - 24.05.2007; in: "NSTI Nanotech Proceedings", 3 (2007), ISBN: 1-4200-6184-4; S. 145 - 148. | |
| 829. | Kosina, H., Triebl, O., Grasser, T.: Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 317 - 320. https://doi.org/10.1007/978-3-211-72861-1_76 | |
| 828. | Li, L., Meller, G., Kosina, H.: Charge Injection Model for Organic Light-Emitting Diodes Vortrag: International Conference on Organic Electronics (ICOE), Eindhoven; 04.06.2007 - 07.06.2007; in: "International Conference on Organic Electronics", (2007). | |
| 827. | Li, L., Meller, G., Kosina, H.: Charge Injection Model in Organic Light-Emitting Diodes based on a Master Equation Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 377 - 380. https://doi.org/10.1007/978-3-211-72861-1_91 | |
| 826. | Gös, W., Grasser, T.: Charging and Discharging of Oxide Defects in Reliability Issues Vortrag: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 15.10.2007 - 18.10.2007; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2007), ISBN: 1-4244-1171-8; S. 27 - 32. | |
| 825. | Sverdlov, V., Kosina, H., Selberherr, S.: Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon Vortrag: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod; 01.10.2007 - 05.10.2007; in: "International Conference "Micro and Nanoelectronics - 2007" Book of Abstracts", O1-14 (2007). | |
| 824. | Sverdlov, V., Kosina, H., Selberherr, S.: Conduction Band in Silicon: Numerical Versus Analytical Two-Band k·p Model Vortrag: Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics (ETAI), Ohrid, Macedonia; 19.09.2007 - 21.09.2007; in: "8th Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics", (2007), 4 S. | |
| 823. | Meller, G., Li, L., Holzer, S., Kosina, H.: Dynamic Monte Carlo Simulation of an Amorphous Organic Device Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 373 - 376. https://doi.org/10.1007/978-3-211-72861-1_90 | |
| 822. | Orio, R., Ceric, H., Selberherr, S.: Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 08.10.2007 - 10.10.2007; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), S. 62 - 63. | |
| 821. | Sverdlov, V., Ungersböck, E., Kosina, H., Selberherr, S.: Effects of Shear Strain on the Conduction Band in Silicon: An Efficient Two-Band k.p Theory Vortrag: European Solid-State Device Research Conference (ESSDERC), München; 11.09.2007 - 13.09.2007; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2007), ISBN: 1-4244-1124-6; S. 386 - 389. | |
| 820. | Ertl, O., Heitzinger, C., Selberherr, S.: Efficient Coupling of Monte Carlo and Level Set Methods for Topography Simulation Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 417 - 420. https://doi.org/10.1007/978-3-211-72861-1_101 | |
| 819. | Schwaha, P., Heinzl, R., Mach, G., Pogoreutz, C., Fister, S., Selberherr, S.: Electro-Biological Simulation using a Web Front-End Vortrag: The European Simulation and Modelling Conference (ESM), Malta; 22.10.2007 - 24.10.2007; in: "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6; S. 493 - 495. | |
| 818. | Ceric, H., Selberherr, S.: Electromigration Modeling for Interconnect Structures in Microelectronics Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Rio de Janeiro (eingeladen); 03.09.2007 - 06.09.2007; in: "ECS Transactions", (2007), ISBN: 978-1-56677-565-6; S. 295 - 304. | |
| 817. | Ceric, H., Selberherr, S.: Electromigration in Interconnect Structures of Microelectronic Circuits Vortrag: Microelectroncs, Electronics, and Electronic Technologies (MIPRO), Opatija (eingeladen); 21.05.2007 - 25.05.2007; in: "Microelectronics, Electronics, and Electronic Technologies (MEET)", (2007), ISBN: 978-953-233-032-8; S. 23 - 28. | |
| 816. | Sverdlov, V., Kosina, H.: Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 08.10.2007 - 10.10.2007; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), S. 92 - 93. | |
| 815. | Karaivanova, A., Atanassov, E., Gurov, T.V., Nedjalkov, M., Vasileska, D., Raleva, K.: Electron-Phonon Interaction in Nanowires: A Monte Carlo Study of the Effect of the Field Vortrag: Seminar on Monte Carlo Methods (MCM), Reading; 18.06.2007 - 21.06.2007; in: "Proceedings of the Seminar on Monte Carlo Methods (MCM)", (2007), S. 23. | |
| 814. | Sverdlov, V.: Enhancing Performance of Modern MOSFETs: Strain Engineering and Advanced Device Architectures Vortrag: International Conference Frontiers of Josephson Physics and Nanoscience (FJPN07), Palinuro, Italy; 23.09.2007 - 28.09.2007; in: "7th International Conference Frontiers of Josephson Physics and Nanoscience", (2007), S. 63 - 64. | |
| 813. | Gös, W., Grasser, T.: First-Principles Investigation on Oxide Trapping Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 157 - 160. https://doi.org/10.1007/978-3-211-72861-1_38 | |
| 812. | Vitanov, S., Palankovski, V., Murad, S., Rödle, T., Quay, R., Selberherr, S.: Hydrodynamic Modeling of AlGaN/GaN HEMTs Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 273 - 276. https://doi.org/10.1007/978-3-211-72861-1_65 | |
| 811. | Sverdlov, V., Karlowatz, G., Ungersböck, E., Kosina, H.: Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 329 - 332. https://doi.org/10.1007/978-3-211-72861-1_79 | |
| 810. | Sverdlov, V., Ungersböck, E., Kosina, H.: Influence of Uniaxial [110] Stress on Silicon Band Structure and Electron Low-Field Mobility in Ultra-Thin Body SOIs Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Leuven; 24.01.2007 - 26.01.2007; in: "EUROSOI 2007", (2007), S. 39 - 40. | |
| 809. | Ceric, H., Nentchev, A., Langer, E., Selberherr, S.: Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 37 - 40. https://doi.org/10.1007/978-3-211-72861-1_9 | |
| 808. | Hollauer, Ch., Ceric, H., van Barel, G., Witvrouw, A., Selberherr, S.: Investigation of Intrinsic Stress Effects in Cantilever Structures Vortrag: IEEE Nano/Micro Engineered and Molecular Systems, Bangkok, Thailand; 16.01.2007 - 19.01.2007; in: "Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems (CD ROM)", (2007), ISBN: 1-4244-0610-2; Paper-Nr. 151, 4 S. | |
| 807. | Triebl, O., Grasser, T.: Investigation of Vector Discretization Schemes for Box Volume Methods Vortrag: The Nanotechnology Conference and Trade Show, Santa Clara; 20.05.2007 - 24.05.2007; in: "NSTI Nanotech Proceedings", 3 (2007), ISBN: 1-4200-6184-4; S. 61 - 64. | |
| 806. | Karner, M., Baumgartner, O., Pourfath, M., Vasicek, M., Kosina, H.: Investigation of a MOSCAP Using NEGF Vortrag: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in: "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3; 2 S. | |
| 805. | Heitzinger, C., Ringhofer, Ch., Selberherr, S.: Investigations of the Potential Jump at the Surface of BioFETs Using a Multi-scale Model Vortrag: Meeting of the Electrochemical Society, Multi-Scale Simulations of Electrochemical Systems, Chicago; 06.05.2007 - 10.05.2007; in: "211th ECS Meeting", 0947 (2007), ISSN: 1091-8213. | |
| 804. | Heinzl, R., Mach, G., Schwaha, P., Selberherr, S.: Labtool - A Managing Software for Computer Courses Vortrag: The European Simulation and Modelling Conference (ESM), Malta; 24.10.2007 - 27.10.2007; in: "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6; S. 488 - 492. | |
| 803. | Grabinski, W., Grasser, T., Gildenblat, G., Smit, G.-J., Bucher, M., Aarts, A., Tajic, A., Chauhan, Y. S., Napieralski, A., Fjeldly, T.A., Iniguez, B., Iannaccone, G., Kayal, M., Posch, W., Wachutka, G., Prégaldiny, F., Lallement, CH., Lemaitre, L.: MOS-AK: Open Compact Modeling Forum Vortrag: International Workshop on Compact Modeling (IWCM), Pacifico Yokohama, Japan (eingeladen); 23.01.2007; in: "The 4th International Workshop on Compact Modeling", (2007), S. 1 - 11. | |
| 802. | Vitanov, S., Palankovski, V., Quay, R., Langer, E.: Modeling of Electron Transport in GaN-based Materials and Devices Poster: 28th International Conference on the Physics of Semiconductors, Wien; 24.07.2006 - 28.07.2006; in: "28th International Conference on the Physics of Semiconductors", (2007), S. 244. | |
| 801. | Vasicek, M., Karner, M., Ungersböck, E., Wagner, M., Kosina, H., Grasser, T.: Modeling of Macroscopic Transport Parameters in Inversion Layers Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 201 - 204. https://doi.org/10.1007/978-3-211-72861-1_48 | |
| 800. | Heinzl, R., Schwaha, P., Giani, C., Selberherr, S.: Modeling of Non-Trivial Data-Structures with a Generic Scientific Simulation Environment Vortrag: High-End Visualization Workshop, Obergurgl; 18.06.2007 - 22.06.2007; in: "Proceedings of the 4th High-End Visualization Workshop", (2007), ISBN: 978-3-86541-216-4; S. 5 - 13. | |
| 799. | Ceric, H., Langer, E., Selberherr, S.: Modeling of Residual Stresses in Thin Metal Films Poster: International Workshop on Stress-Induced Phenomena in Metallization, Kyoto, Japan; 04.04.2007 - 06.04.2007; in: "9th International Workshop on Stress-Induced Phenomena in Metallization", (2007), S. 18. | |
| 798. | Heinzl, R., Schwaha, P., Selberherr, S.: Modern Concepts for High-Perfomance Scientific Computing - Library Centric Application Design Vortrag: International Conference on Software and Data Technologies (ICSOFT), Barcelona; 22.07.2007 - 25.07.2007; in: "Proceedings of the 2nd ICSOFT 2007", (2007), ISBN: 978-989-8111-05-0; S. 100 - 107. | |
| 797. | Palankovski, V., Wagner, M., Heiss, W.: Monte Carlo Simulation of Electron Transport in PbTe Vortrag: International Conference on Narrow Gap Semiconductors, Guildford; 08.07.2007 - 12.07.2007; in: "The 13thInternational Conference on Narrow Gap Semiconductors", (2007), S. 50. | |
| 796. | Vitanov, S., Palankovski, V.: Monte Carlo Study of Transport Properties of InN Poster: International Conference on Narrow Gap Semiconductors, Guildford; 08.07.2007 - 12.07.2007; in: "The 13th International Conference on Narrow Gap Semiconductors", (2007), S. 99. | |
| 795. | Grasser, T., Kaczer, B.: Negative Bias Temperature Instability: Recoverable versus Permanent Degradation Vortrag: European Solid-State Device Research Conference (ESSDERC), München; 11.09.2007 - 13.09.2007; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2007), ISBN: 1-4244-1124-6; S. 127 - 130. | |
| 794. | Vitanov, S., Palankovski, V.: Normally-Off AlGaN/GaN HEMTs with InGaN Cap Layer: A Theoretical Study Poster: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in: "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3; 2 S. https://doi.org/10.1109/ISDRS.2007.4422390 | |
| 793. | Nentchev, A., Selberherr, S.: On the Magnetic Field Extraction for On-Chip Inductance Calculation Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 349 - 352. https://doi.org/10.1007/978-3-211-72861-1_84 | |
| 792. | Vasicek, M., Cervenka, J., Karner, M., Wagner, M., Grasser, T.: Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 08.10.2007 - 10.10.2007; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), S. 96 - 97. | |
| 791. | Vitanov, S., Palankovski, V., Murad, S., Rödle, T., Quay, R., Selberherr, S.: Predictive Simulation of AlGaN/GaN HEMTs Vortrag: IEEE Compound Semiconductor IC Symposium (CSICS), Portland; 14.10.2007 - 17.10.2007; in: "IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest 2007", (2007), ISBN: 1-4244-1022-3; S. 131 - 134. https://doi.org/10.1109/CSICS07.2007.31 | |
| 790. | Nedjalkov, M., Vasileska, D.: Semi-Discrete 2D Wigner-Particle Approach Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 08.10.2007 - 10.10.2007; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), S. 122 - 123. | |
| 789. | Schwaha, P., Schwaha, M., Heinzl, R., Ungersböck, E., Selberherr, S.: Simulation Methodologies for Scientific Computing - Modern Application Design Vortrag: International Conference on Software and Data Technologies (ICSOFT), Barcelona; 22.07.2007 - 25.07.2007; in: "Proceedings of the 2nd ICSOFT 2007", (2007), ISBN: 978-989-8111-07-4; S. 270 - 276. | |
| 788. | Grasser, T., Kaczer, B., Hehenberger, Ph., Gös, W., Connor, R., Reisinger, H., Gustin, W., Schlünder, C.: Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 10.12.2007 - 12.12.2007; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2007), ISBN: 1-4244-1508-x; S. 801 - 804. https://doi.org/10.1109/IEDM.2007.4419069 | |
| 787. | Selberherr, S. (2007). Strain Engineering for Nanoscale CMOS Transistors. IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm) | |
| 786. | Orio, R., Ceric, H., Selberherr, S.: Strain-Induced Anisotropy of Electromigration in Copper Interconnect Vortrag: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in: "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3; 2 S. | |
| 785. | Benger, W., Ritter, G., Heinzl, R.: The Concepts of VISH Vortrag: High-End Visualization Workshop, Obergurgl; 18.06.2007 - 22.06.2007; in: "Proceedings of the 4th High-End Visualization Workshop", (2007), ISBN: 978-3-86541-216-4; S. 28 - 41. | |
| 784. | Pourfath, M., Kosina, H., Selberherr, S.: The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance Vortrag: International Symposium on Advanced Nanodevices and Nanotechnology (ISANN), Waikoloa, Hawaii; 02.12.2007 - 07.12.2007; in: "International Symposium on Advanced Nanodevices and Nanotechnology", (2007), S. 37 - 38. | |
| 783. | Pourfath, M., Kosina, H.: The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNT-FETs Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 309 - 312. https://doi.org/10.1007/978-3-211-72861-1_74 | |
| 782. | Pourfath, M., Kosina, H., Selberherr, S.: The Role of Inelastic Electron-Phonon Interaction on the On-Current and Gate Delay Time of CNT-FETs Vortrag: European Solid-State Device Research Conference (ESSDERC), München; 11.09.2007 - 13.09.2007; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2007), ISBN: 1-4244-1123-8; S. 239 - 242. | |
| 781. | Grasser, T., Gös, W., Sverdlov, V., Kaczer, B.: The Universality of NBTI Relaxation and its Implications for Modeling and Characterization Vortrag: International Reliability Physics Symposium (IRPS), Phoenix; 15.04.2007 - 19.04.2007; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2007), ISBN: 1-4244-0919-5; S. 268 - 280. | |
| 780. | Nedjalkov, M., Vasileska, D., Raleva, K.: Thermal Relaxation of Non-Equilibrium Electrons in Nanowires Vortrag: Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics (ETAI), Ohrid, Macedonia; 19.09.2007 - 21.09.2007; in: "8th Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics", (2007). | |
| 779. | Nentchev, A., Selberherr, S.: Three-Dimensional On-Chip Inductance and Resistance Extraction Vortrag: Sociedade Brasileira da Microeltronica 2007 (SBCCI 2007), Rio de Janeiro; 03.09.2007 - 06.09.2007; in: "20th Symposium on Integrated Circuits and Systems Design", (2007), ISBN: 978-1-59593-910-4; 6 S. https://doi.org/10.1145/1284480.1284540 | |
| 778. | Cervenka, J., Ceric, H., Ertl, O., Selberherr, S.: Three-Dimensional Sacrificial Etching Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 433 - 436. https://doi.org/10.1007/978-3-211-72861-1_105 | |
| 777. | Ceric, H., Langer, E., Selberherr, S.: Three-Phase Model for the Volmer-Weber Crystal Growth Vortrag: Nanostructures and Carrier Interactions (NNCI), Atsugi, Japan; 20.02.2007 - 23.02.2007; in: "Nanostructures and Carrier Interactions", (2007), S. 127. | |
| 776. | Sverdlov, V., Karlowatz, G., Kosina, H., Selberherr, S.: Two-Band k.p Model for the Conduction Band in Silicon Vortrag: The European Simulation and Modelling Conference (ESM), Malta; 22.10.2007 - 24.10.2007; in: "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6; S. 220 - 224. | |
| 775. | Sverdlov, V., Karlowatz, G., Dhar, S., Kosina, H., Selberherr, S.: Two-Band k·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility Vortrag: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in: "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3; 2 S. | |
| 774. | Schwaha, P., Giani, C., Heinzl, R., Selberherr, S.: Visualization of Polynomials Used in Series Expansions Vortrag: High-End Visualization Workshop, Obergurgl; 18.06.2007 - 22.06.2007; in: "Proceedings of the 4th High-End Visualization Workshop", (2007), ISBN: 978-3-86541-216-4; S. 139 - 148. | |
| 773. | Nedjalkov, M., Kosina, H., Vasileska, D.: Wigner Ensemble Monte Carlo: Challanges of 2D Nano-Device Simulation Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 05.06.2007 - 09.06.2007; in: "Proceedings of the International Conference on Large-Scale Scientific Computing (LSSC)", (2007), S. B-41 - B-42. | |
| 772. | Pourfath, M., Kosina, H., Selberherr, S.: A Comprehensive Study of Carbon Nanotube Based Transistors: The Effects of Geometrical, Interface Barrier, and Scattering Parameters Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 11.12.2006 - 13.12.2006; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2006), ISBN: 1-4244-0438-x; S. 819 - 822. https://doi.org/10.1109/IEDM.2006.346739 | |
| 771. | Spevak, M., Heinzl, R., Schwaha, P., Grasser, T.: A Computational Framework for Topological Operations Vortrag: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 18.06.2006 - 21.06.2006; in: "Proceedings of the PARA Conference", (2006), S. 57. | |
| 770. | Movahhedi, M., Nentchev, A., Ceric, H., Abdipour, A., Selberherr, S.: A Finite Element Time-Domain Algorithm Based on the Alternating-Direction Implicit Method Vortrag: European Microwave Week (EUMW), Manchester; 10.09.2006 - 15.09.2006; in: "European Microwave Week 2006 Book of Abstracts", (2006), ISBN: 2-9600551-6-0; S. 1 - 4. | |
| 769. | Riedling, K., Selberherr, S.: A Flexible Web-Based Publication Database Vortrag: International Conference on Education and Information Systems: Technologies and Applications (EISTA), Orlando, Florida, USA; 20.07.2006 - 23.07.2006; in: "Proceedings Volume 1 of the 4th International Conference on Education and Information Systems: Technologies and Applications (EISTA 2006)", F. Malpica, A. Tremante, F. Welsch (Hrg.); International Institute of Informatics and Systemics (IIIS), (2006), ISBN: 980-6560-79-5; S. 262 - 267. | |
| 768. | Schwaha, P., Heinzl, R., Spevak, M., Grasser, T.: A Generic Approach to Scientific Computing Vortrag: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 10.07.2006 - 14.07.2006; in: "ICCAM 2006 Abstracts of Talks", (2006), S. 137. | |
| 767. | Spevak, M., Heinzl, R., Schwaha, P., Grasser, T., Selberherr, S.: A Generic Discretization Library Vortrag: Annual ACM Conference on Object-Oriented Programming, Systems, Languages and Applications (OOPSLA), Portland; 22.10.2006 - 26.10.2006; in: "OOPSLA Proceedings", (2006), ISSN: 1652-926x; S. 95 - 100. | |
| 766. | Heinzl, R., Spevak, M., Schwaha, P., Grasser, T.: A Generic Scientific Simulation Environment for Multidimensional Simulation in the Area of TCAD Poster: The Nanotechnology Conference and Trade Show, Boston; 07.05.2006 - 11.05.2006; in: "NSTI Nanotech Proceedings", (2006), ISBN: 0-9767985-8-1; S. 526 - 529. | |
| 765. | Heinzl, R., Spevak, M., Schwaha, P., Selberherr, S.: A Generic Topology Library Vortrag: Annual ACM Conference on Object-Oriented Programming, Systems, Languages and Applications (OOPSLA), Portland; 22.10.2006 - 26.10.2006; in: "OOPSLA Proceedings", (2006), ISSN: 1652-926x; S. 85 - 93. | |
| 764. | Heinzl, R., Spevak, M., Schwaha, P., Grasser, T.: A High Performance Generic Scientific Simulation Environment Vortrag: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 18.06.2006 - 21.06.2006; in: "Proceedings of the PARA Conference", (2006), S. 61. | |
| 763. | Vitanov, S., Nedjalkov, M., Palankovski, V.: A Monte Carlo Model of Piezoelectric Scattering in GaN Vortrag: International Conference on Numerical Methods and Applications (NM&A), Borovets; 20.08.2006 - 24.08.2006; in: "Sixth International Conference on Numerical Methods and Applications Abstracts", (2006), S. B-75. | |
| 762. | Holzer, S., Wagner, M., Friembichler, L., Langer, E., Grasser, T., Selberherr, S.: A Multi-Purpose Optimization Framework for TCAD Applications Vortrag: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 10.07.2006 - 14.07.2006; in: "ICCAM 2006 Abstracts of Talks", (2006), S. 76. | |
| 761. | Suvorov, V., Hössinger, A., Djuric, Z.: A Novel Approach to Three-Dimensional Semiconductor Process Simulation: Application to Thermal Oxidation Vortrag: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 3 - 4. | |
| 760. | Heinzl, R., Spevak, M., Schwaha, P.: A Novel High Performance Approach for Technology Computer Aided Design Vortrag: Student Electrical Engineering, Information and Communication Technologies (STUDENT EEICT), Brünn; 27.04.2006; in: "Proceedings of the 12th Conference Student EEICT 2006", Vol.4 (2006), ISBN: 80-214-3163-6; S. 446 - 450. | |
| 759. | Karner, M., Wagner, M., Grasser, T., Kosina, H.: A Physically Based Quantum Correction Model for DG MOSFETs Vortrag: Materials Research Society Spring Meeting (MRS), San Francisco; 17.04.2006 - 21.04.2006; in: "San Francisco 2006 MRS Meeting Abstracts", (2006), S. 104 - 105. | |
| 758. | Wittmann, R., Uppal, S., Hössinger, A., Cervenka, J., Selberherr, S.: A Study of Boron Implantation into High Ge Content SiGe Alloys Vortrag: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 29.10.2006 - 03.11.2006; in: "210th ECS Meeting", (2006), ISSN: 1091-8213; Paper-Nr. 1469, 1 S. | |
| 757. | Dhar, S., Kosina, H., Karlowatz, G., Ungersböck, E., Grasser, T., Selberherr, S.: A Tensorial High-Field Electron Mobility Model for Strained Silicon Poster: International SiGe Technology and Device Meeting (ISTDM), Princeton; 15.05.2006 - 17.05.2006; in: "2006 International SiGe Technology and Device Meeting Conference Digest", (2006), ISBN: 1-4244-0461-4; S. 72 - 73. | |
| 756. | Riedling, K., Selberherr, S.: A Web-Based Publication Database for Performance Evaluation and Research Documentation Vortrag: International Conference for Engineering Education (ICEE), San Juan, Puerto Rico; 23.07.2006 - 28.07.2006; in: "Proceedings of the ICEE 2006", International Network for Engineering Education and Research, (2006), ISBN: 1-58874-648-8; S. R2F-5 - R2F-10. | |
| 755. | Schwaha, P., Heinzl, R., Spevak, M., Grasser, T.: Advanced Equation Processing for TCAD Vortrag: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 18.06.2006 - 21.06.2006; in: "Proceedings of the PARA Conference", (2006), S. 64. | |
| 754. | Holzer, S., Wagner, M., Sheikholeslami, A., Karner, M., Span, G., Grasser, T., Selberherr, S.: An Extendable Multi-Purpose Simulation and Optimization Framework for Thermal Problems in TCAD Applications Vortrag: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Nice; 27.09.2006 - 29.09.2006; in: "Collection of Papers Presented at the 12th International Workshop on Thermal Investigation of ICs and Systems", (2006), ISBN: 2-9161-8704-9; S. 239 - 244. | |
| 753. | Karlowatz, G., Ungersböck, E., Wessner, W., Kosina, H., Selberherr, S.: Analysis of Hole Transport in Arbitrarily Strained Germanium Vortrag: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 29.10.2006 - 03.11.2006; in: "210th ECS Meeting", (2006), ISSN: 1091-8213; Paper-Nr. 1449, 1 S. | |
| 752. | Dhar, S., Ungersböck, E., Kosina, H., Grasser, T., Selberherr, S.: Analytical Modeling of Electron Mobility in Strained Germanium Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 39 - 42. https://doi.org/10.1109/SISPAD.2006.282833 | |
| 751. | Sheikholeslami, A., Heinzl, R., Holzer, S., Heitzinger, C., Spevak, M., Leicht, M., Häberlen, O., Fugger, J., Badrieh, F., Parhami, F., Puchner, H., Grasser, T., Selberherr, S.: Applications of Two- and Three-Dimensional General Topography Simulator in Semiconductor Manufacturing Processes Vortrag: Iranian Conference on Electrical Engineering (ICEE), Tehran; 16.05.2006 - 18.05.2006; in: "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 4 S. | |
| 750. | Spevak, M., Heinzl, R., Schwaha, P., Grasser, T.: Automatic Linearization using Functional Programming for Scientific Computing Vortrag: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 10.07.2006 - 14.07.2006; in: "ICCAM 2006 Abstracts of Talks", (2006), S. 147. | |
| 749. | Sverdlov, V., Ungersböck, E., Kosina, H., Selberherr, S.: Comparative Study of Low-Field Mobilities in Double- and Single-Gate Ultra-Thin Body SOI for Different Substrate Orientations Vortrag: Silicon Nanoelectronics Workshop, Honolulu; 11.06.2006 - 12.06.2006; in: "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), S. 17 - 18. | |
| 748. | Holzer, S., Sheikholeslami, A., Karner, M., Grasser, T.: Comparison of Deposition Models for TEOS CVD Process Vortrag: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 26.06.2006 - 28.06.2006; in: "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts", (2006), S. 158 - 159. | |
| 747. | Heinzl, R., Schwaha, P., Spevak, M., Grasser, T.: Concepts for High Performance Generic Scientific Computing Vortrag: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in: "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3; S. 4-1 - 4-9. | |
| 746. | Karner, M., Gehring, A., Holzer, S., Wagner, M., Kosina, H.: Continuum Versus Quasi-Bound State Tunneling in Novel Device Architectures Poster: Silicon Nanoelectronics Workshop, Honolulu; 11.06.2006 - 12.06.2006; in: "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), S. 161 - 162. | |
| 745. | Sverdlov, V., Kosina, H., Selberherr, S.: Current Flow in Upcoming Microelectronic Devices Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen (eingeladen); 26.04.2006 - 28.04.2006; in: "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0041-4; S. 3 - 8. | |
| 744. | Sverdlov, V., Kosina, H., Selberherr, S.: Current Transport in Nanoelectronic Semiconductor Devices Vortrag: IEEE Conference on Emerging Technologies - Nanoelectronics (NanoSingapore), Singapore (eingeladen); 10.01.2006 - 13.01.2006; in: "Proceedings IEEE Conference on Emerging Technologies - Nanoelectronics", (2006), ISBN: 0-7803-9358-9; S. 490 - 495. | |
| 743. | Wagner, M., Span, G., Holzer, S., Grasser, T.: Design Optimization of Large Area Si/SiGe Thermoelectric Generators Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 397 - 400. https://doi.org/10.1109/SISPAD.2006.282918 | |
| 742. | Pourfath, M., Kosina, H., Selberherr, S.: Dissipative Transport in CNTFETs Vortrag: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 345 - 346. | |
| 741. | Li, L., Meller, G., Kosina, H.: Doping Dependent Conductivity in Organic Semiconductors Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 204 - 207. https://doi.org/10.1109/SISPAD.2006.282872 | |
| 740. | Karlowatz, G., Wessner, W., Kosina, H.: Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation Vortrag: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in: "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3; S. 4-1 - 4-6. | |
| 739. | Ungersböck, E., Sverdlov, V., Kosina, H., Selberherr, S.: Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 43 - 46. https://doi.org/10.1109/SISPAD.2006.282834 | |
| 738. | Meller, G., Li, L., Holzer, S., Kosina, H.: Electron Kinetics in Disordered Organic Semiconductors Poster: ACS/IEEE/MRS Annual Organic Microelectronics Workshop, Toronto; 09.07.2006 - 12.07.2006; in: "Abstracts 2nd Annual Organic Microelectronics Workshop", (2006), S. 42. | |
| 737. | Dhar, S., Ungersböck, E., Kosina, H., Grasser, T., Selberherr, S.: Electron Mobility Model for <110> Stressed Si Including Strain-Dependent Mass Poster: Silicon Nanoelectronics Workshop, Honolulu; 11.06.2006 - 12.06.2006; in: "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), S. 153 - 154. | |
| 736. | Li, L., Meller, G., Kosina, H.: Field-Dependent Effective Transport Energy in Organic Semiconductor Poster: Meeting on Molecular Electronics (ELECMOL), Grenoble; 11.12.2006 - 15.12.2006; in: "3rd Meeting on Molecular Electronics", (2006), S. T2-PC18. | |
| 735. | Palankovski, V., Vitanov, S., Quay, R.: Field-Plate Optimization of AlGaN/GaN HEMTs Vortrag: IEEE Compound Semiconductor IC Symposium (CSICS), San Antonio; 12.11.2006 - 15.11.2006; in: "IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest", (2006), ISBN: 1-4244-0126-7; S. 107 - 110. https://doi.org/10.1109/CSICS.2006.319926 | |
| 734. | Karlowatz, G., Ungersböck, E., Wessner, W., Kosina, H.: Full-Band Monte Carlo Analysis of Electron Transport in Arbitrary Strained Silicon Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 63 - 66. https://doi.org/10.1109/SISPAD.2006.282839 | |
| 733. | Nentchev, A., Cervenka, J., Marnaus, G., Enichlmair, H., Selberherr, S.: Heatring - Smart Investigation of Temperature Impact on Integrated Circuit Devices Vortrag: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Nice; 27.09.2006 - 29.09.2006; in: "Collection of Papers Presented at the 12th International Workshop on Thermal Investigation of ICs and Systems", (2006), ISBN: 2-9161-8704-9; S. 235 - 238. | |
| 732. | Heinzl, R., Spevak, M., Schwaha, P., Grasser, T.: High Performance Process and Device Simulation with a Generic Environment Vortrag: Iranian Conference on Electrical Engineering (ICEE), Tehran; 16.05.2006 - 18.05.2006; in: "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 4 S. | |
| 731. | Palankovski, V., Marchlewski, A., Ungersböck, E., Selberherr, S.: Identification of Transport Parameters for Gallium Nitride Based Semiconductor Devices Vortrag: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in: "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3; S. 14-1 - 14-9. | |
| 730. | Wittmann, R., Puchner, H., Ceric, H., Selberherr, S.: Impact of Random Bit Values on NBTI Lifetime of an SRAM Cell Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 03.07.2006 - 07.07.2006; in: "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9; S. 41 - 44. | |
| 729. | Entner, R., Grasser, T., Enichlmair, H., Minixhofer, R.: Influence of Interface and Oxide Traps on Negative Bias Temperature Instability Poster: Silicon Nanoelectronics Workshop, Honolulu; 11.06.2006 - 12.06.2006; in: "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), S. 163 - 164. | |
| 728. | Ferrari, G., Jacoboni, C., Nedjalkov, M., Asenov, A.: Introducing Energy Broadening in Semiclassical Monte Carlo Simulations Vortrag: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 17 - 18. | |
| 727. | Entner, R., Grasser, T., Enichlmair, H., Minixhofer, R.: Investigation of NBTI Recovery During Measurement Vortrag: Materials Research Society Spring Meeting (MRS), San Francisco; 17.04.2006 - 21.04.2006; in: "San Francisco 2006 MRS Meeting Abstracts", (2006), S. 110 - 111. | |
| 726. | Schwaha, P., Heinzl, R., Brezna, W., Smoliner, J., Enichlmair, H., Minixhofer, R., Grasser, T.: Leakage Current Analysis of a Real World Silicon-Silicon Dioxide Capacitance Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; 26.04.2006 - 28.04.2006; in: "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0042-2; S. 365 - 370. | |
| 725. | Ungersböck, E., Sverdlov, V., Kosina, H., Selberherr, S.: Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations Vortrag: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 29.10.2006 - 03.11.2006; in: "210th ECS Meeting", (2006), ISSN: 1091-8213; Paper-Nr. 1397, 1 S. | |
| 724. | Sverdlov, V., Ungersböck, E., Kosina, H.: Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions Hauptvortrag: NATO Advanced Research Workshop Nanoscaled Semiconductor-On-Insulator Structures and Devices, Sudak; 15.10.2006 - 19.10.2006; in: "NATO Advanced Research Workshop Conference Abstracts", (2006), S. 77 - 78. | |
| 723. | Sverdlov, V., Ungersböck, E., Kosina, H.: Mobility for High Effective Field in Double-Gate and Single-Gate SOI for Different Substrate Orientations Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Grenoble; 08.03.2006 - 10.03.2006; in: "EUROSOI 2006 Second Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits", (2006), S. 133 - 134. | |
| 722. | Ungersböck, E., Sverdlov, V., Kosina, H., Selberherr, S.: Modeling of Advanced Semiconductor Devices Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Ouro Preto (eingeladen); 28.08.2006 - 01.09.2006; in: "ECS Transactions", (2006), ISBN: 1-56677-512-4; S. 207 - 216. | |
| 721. | Grasser, T., Gös, W., Kaczer, B.: Modeling of Dispersive Transport in the Context of Negative Bias Temperature Instability Vortrag: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 16.10.2006 - 19.10.2006; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2006), ISBN: 1-4244-0297-2; S. 5 - 10. | |
| 720. | Kosina, H.: Modeling of Electronic Transport Phenomena in Semiconductor Nanodevices Vortrag: The 4th International Nanotech Symposium & Exhibition, Seoul (eingeladen); 30.08.2006 - 01.09.2006; in: "Program Book NANO KOREA 2006", (2006). | |
| 719. | Hollauer, Ch., Ceric, H., Selberherr, S.: Modeling of Intrinsic Stress Effects in Deposited Thin Films Vortrag: EUROSENSORS XX, Göteborg; 17.09.2006 - 20.09.2006; in: "Eurosensors 20th Anniversary Vol. 1", (2006), ISBN: 91-631-9280-2; S. 324 - 325. | |
| 718. | Grasser, T., Selberherr, S.: Modeling of Negative Bias Temperature Instability Vortrag: Symposium Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI ERA, Warszawa (eingeladen); 25.06.2006 - 28.06.2006; in: "Abstracts 7th Symposium Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI ERA", (2006), S. 1 - 2. | |
| 717. | Gurov, T.V., Atanassov, E., Nedjalkov, M., Palankovski, V.: Monte Carlo Method for Modeling of Electron Transport in Quantum Wires Vortrag: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in: "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3; S. 13-1 - 13-8. | |
| 716. | Wittmann, R., Hössinger, A., Cervenka, J., Uppal, S., Selberherr, S.: Monte Carlo Simulation of Boron Implantation into (100) Germanium Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 381 - 384. https://doi.org/10.1109/SISPAD.2006.282914 | |
| 715. | Dhar, S., Ungersböck, E., Nedjalkov, M., Palankovski, V.: Monte Carlo Simulation of the Electron Mobility in Strained Silicon Vortrag: International Scientific and Applied Science Conference (ET), Sozopol; 20.09.2006 - 22.09.2006; in: "The Fifteenth International Scientific and Applied Science Conference Electronics ET'2006 Proceedings of the Conference Book 2", (2006), ISBN: 954-438-565-7; S. 169 - 173. | |
| 714. | Ceric, H., Cervenka, J., Langer, E., Selberherr, S.: Moving Boundary Applications in Process and Interconnect TCAD Vortrag: Mini-Workshop on Anisotropic Motion Laws, Oberwolfach; 13.08.2006 - 19.08.2006; in: "Proceedings Mini-Workshop on Anisotropic Motion Laws", Report No.38/2006 (2006), S. 13 - 16. | |
| 713. | Heinzl, R., Spevak, M., Schwaha, P., Grasser, T.: Multidimensional and Multitopological TCAD with a Generic Scientific Simulation Environment Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; 26.04.2006 - 28.04.2006; in: "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0042-2; S. 173 - 176. | |
| 712. | Kosina, H.: Nanoelectronic Device Simulation Based on the Wigner Function Formalism Vortrag: International Workshop on Tera- and Nano-Devices: Physics and Modeling, Aizu-Wakamatsu (eingeladen); 16.10.2006 - 19.10.2006; in: "IWTND06 Workbook", (2006), S. 26. | |
| 711. | Entner, R., Grasser, T., Enichlmair, H., Minixhofer, R.: Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures Vortrag: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 26.06.2006 - 28.06.2006; in: "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts", (2006), S. 96 - 97. | |
| 710. | Vitanov, P., LeQuang, N., Harizanova, A., Nichiporuk, O., Ivanova, T., Vitanov, S., Palankovski, V.: New Surface Passivation and Local Contacts on the Backside for thin mc-Si Solar Cells Vortrag: World Renewable Energy Congress (WREC), Firenze; 19.08.2006 - 25.08.2006; in: "World Renewable Energy Congress IX Book of Abstracts", (2006), ISBN: 978-0-08-045056-8; S. 564. | |
| 709. | Karner, M., Holzer, S., Vasicek, M., Gös, W., Wagner, M., Kosina, H., Selberherr, S.: Numerical Analysis of Gate Stacks Vortrag: Meeting of the Electrochemical Society, High Dielectric Constant Gate Stacks, Cancun; 29.10.2006 - 03.11.2006; in: "210th ECS Meeting", (2006), ISSN: 1091-8213; Paper-Nr. 1119, 1 S. | |
| 708. | Pourfath, M., Kosina, H.: On the Effect of Electron-Phonon Interaction Parameters on the Performance of Carbon Nanotube Based Transistors Poster: Trends in Nanotechnology Conference (TNT), Grenoble; 04.09.2006 - 08.09.2006; in: "Proceedings Trends in Nanotechnology", (2006), 2 S. | |
| 707. | Pourfath, M., Kosina, H., Selberherr, S.: On the Effect of Scattering on the Performance of Carbon Nanotube Field-Effect Transistors Vortrag: Iranian Conference on Electrical Engineering (ICEE), Tehran; 16.05.2006 - 18.05.2006; in: "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 5 S. | |
| 706. | Pourfath, M., Kosina, H., Selberherr, S.: Optimal Design for Carbon Nanotube Transistors Vortrag: European Solid-State Device Research Conference (ESSDERC), Montreux; 19.09.2006 - 21.09.2006; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2006), ISBN: 1-4244-0301-4; S. 210 - 213. | |
| 705. | Holzer, S., Selberherr, S.: Optimization Issue in Interconnect Analysis Vortrag: International Conference on Microelectronics (MIEL), Beograd (eingeladen); 14.05.2006 - 17.05.2006; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2006), ISBN: 1-4244-0116-x; S. 465 - 470. https://doi.org/10.1109/ICMEL.2006.1650994 | |
| 704. | Pourfath, M., Kosina, H., Selberherr, S.: Optimizing the Performance of Carbon Nanotube Transistors Poster: IEEE Conference on Nanotechnology (NANO), Cincinnati; 17.06.2006 - 20.06.2006; in: "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2006), ISBN: 1-4244-0078-3; S. 520 - 523. https://doi.org/10.1109/NANO.2006.247702 | |
| 703. | Sverdlov, V., Ungersböck, E., Kosina, H., Selberherr, S.: Orientation Dependence of the Low Field Mobility in Double- and Single-Gate SOI FETs Vortrag: European Solid-State Device Research Conference (ESSDERC), Montreux; 18.09.2006 - 22.09.2006; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2006), ISBN: 1-4244-0301-4; S. 178 - 181. | |
| 702. | Li, L., Meller, G., Kosina, H.: Percolation Current in Organic Semiconductors Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 161 - 162. | |
| 701. | Heinzl, R., Spevak, M., Schwaha, P., Grasser, T., Selberherr, S.: Performance Analysis for High-Precision Interconnect Simulation Vortrag: European Simulation and Modeling Conference (ESMC), Toulouse; 23.10.2006 - 25.10.2006; in: "The 2006 European Simulation and Modelling Conference", (2006), ISBN: 9077381-30-9; S. 113 - 116. | |
| 700. | Heinzl, R., Schwaha, P., Spevak, M., Grasser, T.: Performance Aspects of a DSEL for Scientific Computing with C++ Vortrag: Workshop on Parallel Object-Oriented Scientific Computing (POOSC), Nantes; 03.07.2006 - 07.07.2006; in: "Proceedings of the POOSC Conference", (2006), S. 37 - 41. | |
| 699. | Ungersböck, E., Dhar, S., Karlowatz, G., Kosina, H., Selberherr, S.: Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 141 - 142. | |
| 698. | Sheikholeslami, A., Selberherr, S., Parhami, F., Puchner, H.: Planarization of Passivation Layers during Manufacturing Processes of Image Sensors Vortrag: Numerical Simulation of Optoelectronic Devices (NUSOD), Singapore; 11.09.2006 - 14.09.2006; in: "Proceedings of the 6th International Conference on Numerical Simulation of Optoelectronic Devices", (2006), ISBN: 0-7803-9755-x; S. 35 - 36. | |
| 697. | Sheikholeslami, A., Parhami, F., Puchner, H., Selberherr, S.: Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers Vortrag: International Conference on Nanoscience and Technology (ICNT), Basel; 30.07.2006 - 04.08.2006; in: "International Conference on Nanoscience and Technology (ICNT 2006)", (2006), ISBN: 3-905084-71-6; S. 163 - 164. | |
| 696. | Wagner, M., Span, G., Holzer, S., Triebl, O., Grasser, T.: Power Output Improvement of SiGe Thermoelectric Generators Vortrag: Meeting of the Electrochemical Society (ECS), Cancun; 29.10.2006 - 03.11.2006; in: "Meeting Abstracts 2006 Joint International Meeting", (2006), ISSN: 1091-8213; Paper-Nr. 1516, 1 S. | |
| 695. | Spevak, M., Heinzl, R., Schwaha, P., Grasser, T.: Process and Device Simulation With a Generic Scientific Simulation Environment Vortrag: International Conference on Microelectronics (MIEL), Beograd; 14.04.2006 - 17.04.2006; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2006), ISBN: 1-4244-0116-x; S. 475 - 478. https://doi.org/10.1109/ICMEL.2006.1650996 | |
| 694. | Wagner, M., Grasser, T., Karner, M., Kosina, H.: Quantum Correction for DG MOSFETs Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 87 - 88. | |
| 693. | Sverdlov, V., Grasser, T., Kosina, H., Selberherr, S.: Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices Vortrag: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 29 - 30. | |
| 692. | Meller, G., Li, L., Holzer, S., Kosina, H.: Simulation of Carrier Injection and Propagation in Molecularly Disordered Systems Vortrag: Numerical Simulation of Optoelectronic Devices (NUSOD), Singapore; 11.09.2006 - 14.09.2006; in: "Proceedings of the 6th International Conference on Numerical Simulation of Optoelectronic Devices", (2006), ISBN: 0-7803-9755-x; S. 1 - 2. | |
| 691. | Spevak, M., Heinzl, R., Schwaha, P., Grasser, T.: Simulation of Microelectronic Structures Using A Posteriori Error Estimation and Mesh Optimization Vortrag: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in: "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3; S. 5-1 - 5-8. | |
| 690. | Ceric, H., Hollauer, Ch., Selberherr, S.: Simulation of Texture Development Caused Stress Build-Up in Electroplated Copper Lines Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 03.07.2006 - 07.07.2006; in: "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2006), ISBN: 1-4244-0206-9; S. 359 - 363. | |
| 689. | Karner, M., Ungersböck, E., Gehring, A., Holzer, S., Kosina, H., Selberherr, S.: Strain Effects on Quasi-Bound State Tunneling in Advanced SOI CMOS Technologies Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 314 - 317. https://doi.org/10.1109/SISPAD.2006.282898 | |
| 688. | Ungersböck, E., Sverdlov, V., Kosina, H., Selberherr, S.: Strain Engineering for CMOS Devices Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Shanghai (eingeladen); 23.10.2006 - 26.10.2006; in: "2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (Part 1 of 3)", (2006), ISBN: 1-4244-0160-7; S. 124 - 127. | |
| 687. | Grasser, T., Entner, R., Triebl, O., Enichlmair, H.: TCAD Modeling of Negative Bias Temperature Instability Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 330 - 333. https://doi.org/10.1109/SISPAD.2006.282902 | |
| 686. | Pourfath, M., Kosina, H., Cheong, B.-H., Park, W.J., Selberherr, S.: The Effect of Electron-Phonon Interaction on the Static and Dynamic Response of CNTFETs Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 208 - 211. https://doi.org/10.1109/SISPAD.2006.282873 | |
| 685. | Ungersböck, E., Kosina, H., Selberherr, S.: The Influence of Stress on Inversion Layer Mobility Vortrag: Advanced Heterostructure Workshop (AHW), Kona (eingeladen); 03.12.2006 - 08.12.2006; in: "Abstracts Advanced Heterostructure Workshop", (2006), S. TH-2. | |
| 684. | Krishnamohan, T., Jungemann, C., Kim, D., Ungersböck, E., Selberherr, S., Wong, P., Nishi, Y., Saraswat, K.: Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 11.12.2006 - 13.12.2006; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2006), ISBN: 1-4244-0438-x; S. 937 - 940. https://doi.org/10.1109/IEDM.2006.346938 | |
| 683. | Span, G., Wagner, M., Holzer, S., Grasser, T.: Thermoelectric Power Conversion using Generation of Electron-Hole Pairs in Large Area p-n Junctions Vortrag: International Conference on Thermoelectrics, Vienna; 06.08.2006 - 10.08.2006; in: "International Conference on Thermoelectrics", 6 (2006), ISBN: 1-4244-0811-3; S. 23 - 28. | |
| 682. | Wagner, M., Span, G., Grasser, T.: Thermoelectric Power Generation Using Large Area Si/SiGe pn-Junctions With Varying Ge-Content Vortrag: International SiGe Technology and Device Meeting (ISTDM), Princeton; 15.05.2006 - 17.05.2006; in: "2006 International SiGe Technology and Device Meeting Conference Digest", (2006), ISBN: 1-4244-0461-4; S. 216 - 217. | |
| 681. | Ceric, H., Hollauer, Ch., Selberherr, S.: Three-Dimensional Simulation of Intrinsic Stress Build-Up in Thin Films Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 192 - 195. https://doi.org/10.1109/SISPAD.2006.282869 | |
| 680. | Holzer, S., Hollauer, Ch., Ceric, H., Karner, M., Grasser, T., Langer, E., Selberherr, S.: Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 03.07.2006 - 07.07.2006; in: "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9; S. 154 - 157. | |
| 679. | Selberherr, S.: Tools, Methodologies and Scientific Issues for the Modeling of Advanced Semiconductor Devices Vortrag: Workshop on Semiconductors and Micro- & Nano-Technology (SEMINATEC), Campinas (eingeladen); 09.02.2006 - 10.02.2006; in: "Abstracts of Workshop on Semiconductors and Micro- & Nano-Technology", (2006), S. 12 - 15. | |
| 678. | Pourfath, M., Kosina, H., Selberherr, S.: Tunneling-CNTFETs Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 291 - 292. | |
| 677. | Vitanov, P., Vitanov, S., Palankovski, V.: Two-Dimensional Analysis of the Back-Side Contacts of Thin Silicon Solar Cells Poster: 21st European Photovoltaic Solar Energy Conference, Dresden; 04.09.2006 - 08.09.2006; in: "21st European Photovoltaic Solar Energy Conference", (2006), ISBN: 3-936338-20-5; S. 1475 - 1478. | |
| 676. | Vitanov, S., Palankovski, V., Quay, R., Langer, E.: Two-Dimensional Numerical Simulation of AlGaN/GaN HEMTs Vortrag: Target Days (TARGET), Frascati; 16.10.2006 - 18.10.2006; in: "TARGET Days 2006 Book of Proceedings", (2006), ISBN: 3-902477-07-5; S. 81 - 84. | |
| 675. | Palankovski, V., Hristov, M., Philippov, P.: Two-Dimensional Physical AC-Simulation of GaAs HBTs Vortrag: International Scientific and Applied Science Conference (ET), Sozopol; 20.09.2006 - 22.09.2006; in: "The Fifteenth International Scientific and Applied Science Conference Electronics ET'2006 Proceedings of the Conference Book 2", (2006), ISBN: 954-438-565-7; S. 164 - 168. | |
| 674. | Nedjalkov, M., Vasileska, D., Atanassov, E., Palankovski, V.: Ultrafast Wigner Transport in Quantum Wires Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 285 - 286. | |
| 673. | Karner, M., Gehring, A., Holzer, S., Pourfath, M., Wagner, M., Kosina, H., Grasser, T., Selberherr, S.: VSP - A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 255 - 256. | |
| 672. | Karner, M., Gehring, A., Wagner, M., Entner, R., Holzer, S., Gös, W., Vasicek, M., Grasser, T., Kosina, H., Selberherr, S.: VSP-A Gate Stack Analyzer Vortrag: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 26.06.2006 - 28.06.2006; in: "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Program and Abstracts", (2006), S. 101 - 102. | |
| 671. | Triebl, O., Grasser, T.: Vector Discretization Schemes Based on Unstructured Neighbourhood Information Vortrag: International Semiconductor Conference CAS, Sinaia; 27.09.2006 - 29.09.2006; in: "CAS 2006 Proceedings Vol. 2", (2006), ISBN: 1-4244-0109-7; S. 337 - 340. | |
| 670. | Kosina, H., Sverdlov, V., Grasser, T.: Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 357 - 360. https://doi.org/10.1109/SISPAD.2006.282908 | |
| 669. | Pourfath, M., Kosina, H., Selberherr, S.: A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors Vortrag: Modelling and Simulation of Electron Devices (MSED), Pisa; 04.07.2005 - 05.07.2005; in: "15th Workshop on Modelling and Simulation of Electron Devices", (2005), S. 95 - 96. | |
| 668. | Heinzl, R., Spevak, M., Schwaha, P., Grasser, T.: A Novel Technique for Coupling Three Dimensional Mesh Adaption With An A Posteriori Error Estimator Vortrag: PhD Research in Microelectronics and Electronics (PRIME), Lausanne; 25.07.2005 - 28.07.2005; in: "2005 PhD Research in Microelectronics and Electronics", Vol. 1 (2005), ISBN: 0-7803-9345-7; S. 175 - 178. | |
| 667. | Dhar, S., Kosina, H., Palankovski, V., Ungersböck, E., Selberherr, S.: A Physically-Based Electron Mobility Model for Strained Si Devices Vortrag: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; S. 13 - 16. | |
| 666. | Heinzl, R., Schwaha, P., Spevak, M., Grasser, T.: Adaptive Mesh Generation for TCAD with Guaranteed Error Bounds Vortrag: European Simulation and Modeling Conference (ESMC), Porto; 26.10.2005 - 28.10.2005; in: "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8; S. 425 - 429. | |
| 665. | Li, L., Kosina, H.: An Analytical Model for Organic Thin Film Transistors Vortrag: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; 19.12.2005 - 21.12.2005; in: "Proceedingd of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits", (2005), ISBN: 0-7803-9339-2; S. 571 - 574. | |
| 664. | Sheikholeslami, A., Parhami, F., Heinzl, R., Al-Ani, E., Heitzinger, C., Badrieh, F., Puchner, H., Grasser, T., Selberherr, S.: Applications of Three-Dimensional Topography Simulation in the Design of Interconnect Lines Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 187 - 190. https://doi.org/10.1109/SISPAD.2005.201504 | |
| 663. | Ceric, H., Deshpande, V., Hollauer, Ch., Holzer, S., Grasser, T., Selberherr, S.: Comprehensive Analysis of Vacancy Dynamics Due to Electromigration Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 27.06.2005 - 01.07.2005; in: "Proceedings of the 12th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2005), ISBN: 0-7803-9301-5; S. 100 - 103. | |
| 662. | Schwaha, P., Heinzl, R., Spevak, M., Grasser, T.: Coupling Three-Dimensional Mesh Adaptation with an A Posteriori Error Estimator Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 235 - 238. https://doi.org/10.1109/SISPAD.2005.201516 | |
| 661. | Gehring, A., Selberherr, S.: Current Transport Models for Nano-Scale Semiconductor Devices Vortrag: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando (eingeladen); 10.07.2005 - 13.07.2005; in: "Proc. 9th World Multi-Conf.on Systemics, Cybernetics and Informatics", Vol. 6 (2005), ISBN: 980-6560-58-2; S. 366 - 371. | |
| 660. | Angelov, G., Palankovski, V., Hristov, M.: Demonstration of a Slipstream Simulation Flow Including Device and Circuit Simulators Poster: ISSE 2005 - 28th International Spring Seminar on Electronics Technology, Wiener Neustadt; 19.05.2005 - 22.05.2005; in: "ISSE 2005, 28th International Spring Seminar on Electronics Technology, Conference Program and Abstracts", ÖVE-Schriftenreihe, 39 (2005), ISBN: 3-85133036-6; S. 110 - 111. | |
| 659. | Angelov, G., Palankovski, V., Hristov, M., Philippov, P.: Demonstration of a Slipstream Simulation Flow Including Device and Circuit Simulators Poster: ISSE 2005 - 28th International Spring Seminar on Electronics Technology, Wiener Neustadt; 19.05.2005 - 22.05.2005; in: "28th International Spring Seminar on Electronics Technology", (2005), ISBN: 0-7803-9324-4; S. 486 - 491. https://doi.org/10.1109/ISSE.2005.1491077 | |
| 658. | Spevak, M., Grasser, T.: Discretisation Schemes For Macroscopic Transport Equations on Non-Cartesian Coordinate Systems Vortrag: European Simulation and Modeling Conference (ESMC), Porto; 24.10.2005 - 26.10.2005; in: "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8; S. 474 - 478. | |
| 657. | Wessner, W., Ceric, H., Cervenka, J., Selberherr, S.: Dynamic Mesh Adaptation for Three-Dimensional Electromigration Simulation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 147 - 150. https://doi.org/10.1109/SISPAD.2005.201494 | |
| 656. | Karner, M., Gehring, A., Kosina, H.: Efficient Calculation of Life Time Based Direct Tunneling through Stacked Dielectrics Vortrag: Modelling and Simulation of Electron Devices (MSED), Pisa; 04.07.2005 - 05.07.2005; in: "15th Workshop on Modelling and Simulation of Electron Devices", (2005), S. 97 - 98. | |
| 655. | Karner, M., Gehring, A., Kosina, H., Selberherr, S.: Efficient Calculation of Quasi-Bound State Tunneling in CMOS Devices Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 35 - 38. https://doi.org/10.1109/SISPAD.2005.201466 | |
| 654. | Karner, M., Gehring, A., Holzer, S., Kosina, H., Selberherr, S.: Efficient Calculation of Quasi-Bound State Tunneling through Stacked Dielectrics Vortrag: Meeting of the Electrochemical Society (ECS), Los Angeles; 16.10.2005 - 21.10.2005; in: "208th ECS Meeting", 1119 (2005), ISSN: 1091-8213; 1 S. | |
| 653. | Jungemann, C., Grasser, T., Neinhüs, B., Meinerzhagen, B.: Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium Vortrag: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; S. 25 - 28. | |
| 652. | Pourfath, M., Park, W.J., Kosina, H., Selberherr, S.: Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2005 - 10.06.2005; in: "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), S. 50 - 51. | |
| 651. | Gurov, T.V., Atanasov, E., Dimov, I., Palankovski, V., Smirnov, S.: Femtosecond Evolution of Spacially Inhomogeneous Carrier Excitations: Part II: Stochastic Approach and GRID Implementation Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 06.06.2005 - 10.06.2005; in: "Book of Abstracts", (2005), S. 26 - 27. | |
| 650. | Nedjalkov, M., Gurov, T.V., Kosina, H., Vasileska, D., Palankovski, V.: Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations: Part I: Kinetic Approach Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 06.06.2005 - 10.06.2005; in: "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), S. 46. | |
| 649. | Schwaha, P., Heinzl, R., Brezna, W., Smoliner, J., Enichlmair, H., Minixhofer, R., Grasser, T.: Fully Three-Dimensional Analysis of Leakage Current in Non-Planar Oxides Vortrag: European Simulation and Modeling Conference (ESMC), Porto; 24.10.2005 - 26.10.2005; in: "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8; S. 469 - 473. | |
| 648. | Heinzl, R., Grasser, T.: Generalized Comprehensive Approach for Robust Three-Dimensional Mesh Generation for TCAD Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 211 - 214. https://doi.org/10.1109/SISPAD.2005.201510 | |
| 647. | Pourfath, M., Kosina, H., Cheong, B.-H., Park, W.J.: Geometry-dependence of the DC and AC Response of Ohmic Contact Carbon Nanotube Field Effect Transistor Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 91 - 94. https://doi.org/10.1109/SISPAD.2005.201480 | |
| 646. | Pourfath, M., Cheong, B.-H., Park, W., Kosina, H., Selberherr, S.: High Performance Carbon Nanotube Field Effect Transistor with the Potential for Tera Level Integration Vortrag: International Conference on Ultimate Integration of Silicon (ULIS), Bologna; 07.04.2005 - 08.04.2005; in: "ULIS 2005 6th International Conference on Ultimate Integration of Silicon Proceedings of the Conference", (2005), ISBN: 8890084707; S. 95 - 98. | |
| 645. | Grasser, T. (2005). Higher-Order Moment Models for Engineering Applications. Recent Advances in Modeling and Simulation of Semiconductor Devices and Circuits (SEMIC), Milano, Austria. (reposiTUm) | |
| 644. | Entner, R., Gehring, A., Kosina, H., Grasser, T., Selberherr, S.: Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices Vortrag: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; S. 45 - 48. | |
| 643. | Wittmann, R., Puchner, H., Hinh, L., Ceric, H., Gehring, A., Selberherr, S.: Impact of NBTI-driven Parameter Degradation on Lifetime of a 90nm p-MOSFET Poster: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 17.10.2005 - 20.10.2005; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2005), ISBN: 0-7803-8992-1; S. 99 - 102. | |
| 642. | Pourfath, M., Kosina, H., Cheong, B.-H., Park, W.J., Selberherr, S.: Improving DC and AC Characteristics of Ohmic Contact Carbon Nanotube Field Effect Transistors Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble; 12.09.2005 - 16.09.2005; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", Cdrom Isbn: 0-7803-9204-3 (2005), ISBN: 0-7803-9203-5; S. 541 - 544. | |
| 641. | Sheikholeslami, A., Holzer, S., Heitzinger, C., Leicht, M., Häberlen, O., Fugger, J., Grasser, T., Selberherr, S.: Inverse Modeling of Oxid Deposition Using Measurements of a TEOS CVD Process Vortrag: PhD Research in Microelectronics and Electronics (PRIME), Lausanne; 25.07.2005 - 28.07.2005; in: "2005 PhD Research in Microelectronics and Electronics", Vol. 2 (2005), ISBN: 0-7803-9345-7; S. 279 - 282. | |
| 640. | Hollauer, Ch., Holzer, S., Ceric, H., Wagner, S., Grasser, T., Selberherr, S.: Investigation of Thermo-Mechanical Stress in Modern Interconnect Layouts Vortrag: International Congress on Thermal Stresses (TS), Wien; 26.05.2005 - 29.05.2005; in: "Proceedings of The Sixth International Congress on Thermal Stresses", Schriftenreihe der Technischen Universität Wien, Vol. 2 (2005), ISBN: 3-901167-12-9; S. 637 - 640. | |
| 639. | Meller, G., Li, L., Kosina, H.: Kinetic Monte Carlo Simulation of Molecularly Doped Organic Semiconductors Poster: Meeting on Molecular Electronics (ELECMOL), Grenoble; 19.12.2005 - 21.12.2005; in: "Second Meeting on Molecular Electronics", (2005), S. 107. | |
| 638. | Sheikholeslami, A., Al-Ani, E., Heinzl, R., Heitzinger, C., Parhami, F., Badrieh, F., Puchner, H., Grasser, T., Selberherr, S.: Level Set Method Based General Topography Simulator and its Application in Interconnect Processes Poster: International Conference on Ultimate Integration of Silicon (ULIS), Bologna; 07.04.2005 - 08.04.2005; in: "ULIS 2005 6th International Conference on Ultimate Integration of Silicon", (2005), ISBN: 8890084707; S. 139 - 142. | |
| 637. | Holzer, S., Selberherr, S.: Material Parameter Identification for Interconnect Analysis Vortrag: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli (eingeladen); 13.12.2005 - 17.12.2005; in: "Proceedings of the XIII International Workshop on Physics of Semiconductor Devices", Vol. 2 (2005), ISBN: 81-7764-946-9; S. 635 - 641. | |
| 636. | Ceric, H., Hollauer, Ch., Selberherr, S.: Microstructure and Stress Aspects of Electromigration Modeling Poster: International Workshop on Stress-Induced Phenomena in Metallization, Dresden; 12.09.2005 - 14.09.2005; in: "8th International Workshop on Stress-Induced Phenomena in Metallization", (2005), S. P 17. | |
| 635. | Sverdlov, V., Kosina, H., Selberherr, S.: Modeling Current Transport in Ultra-Scaled Field Effect Transistors Vortrag: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong (eingeladen); 19.12.2005 - 21.12.2005; in: "Proceedings of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits", (2005), ISBN: 0-7803-9339-2; S. 385 - 390. | |
| 634. | Entner, R., Gehring, A., Kosina, H., Grasser, T., Selberherr, S.: Modeling of Tunneling Currents for Highly Degraded CMOS Devices Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 219 - 222. https://doi.org/10.1109/SISPAD.2005.201512 | |
| 633. | Dhar, S., Karlowatz, G., Ungersböck, E., Kosina, H., Selberherr, S.: Modeling of Velocity-Field Characteristics in Strained Silicon Poster: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; 13.12.2005 - 17.12.2005; in: "Proceedings of the XIII International Workshop on Physics of Semiconductor Devices", Vol. 2 (2005), ISBN: 81-7764-947-7; S. 1060 - 1063. | |
| 632. | Wittmann, R., Hössinger, A., Selberherr, S.: Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETs Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 191 - 194. https://doi.org/10.1109/SISPAD.2005.201505 | |
| 631. | Meller, G., Li, L., Kosina, H.: Monte Carlo Simulation of Molecularly Doped Organic Semiconductors Vortrag: European Conference on Organic Electronics and Related Phenomena (ECOER), Winterthur; 27.09.2005 - 30.09.2005; in: "3rd European Conference on Organic Electronics and Related Phenomena Book of Abstracts", (2005), S. 44 - 45. | |
| 630. | Ungersböck, E., Kosina, H.: Monte Carlo Study of Electron Transport in Strained Silicon Inversion Layers Vortrag: Modelling and Simulation of Electron Devices (MSED), Pisa; 04.07.2005 - 05.07.2005; in: "15th Workshop on Modelling and Simulation of Electron Devices", (2005), S. 10 - 11. | |
| 629. | Dhar, S., Karlowatz, G., Ungersböck, E., Kosina, H.: Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained Silicon Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 223 - 226. https://doi.org/10.1109/SISPAD.2005.201513 | |
| 628. | Karner, M., Gehring, A., Holzer, S., Kosina, H.: On the Efficient Calculation of Quasi-Bound States for the Simulation of Direct Tunneling Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2005 - 10.06.2005; in: "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2005), S. 33 - 34. | |
| 627. | Nentchev, A., Sabelka, R., Wessner, W., Selberherr, S.: On-Chip Interconnect Simulation of Parasitic Capacitances in Periodic Structures Vortrag: European Simulation and Modeling Conference (ESMC), Porto; 24.10.2005 - 26.10.2005; in: "The 2005 European Simulation and Modelling Conference Proceedings", (2005), S. 420 - 424. | |
| 626. | Wagner, M., Karner, M., Grasser, T.: Quantum Correction Models for Modern Semiconductor Devices Poster: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; 13.12.2005 - 17.12.2005; in: "Proceedings of the XIII International Workshop on Semiconductor Devices", Vol. 1 (2005), S. 458 - 461. | |
| 625. | Kosina, H., Sverdlov, V., Ringhofer, Ch., Nedjalkov, M., Selberherr, S.: Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2005 - 10.06.2005; in: "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), S. 36 - 37. | |
| 624. | Gehring, A., Sverdlov, V., Kosina, H., Selberherr, S.: Quantum Transport in Ultra-Scaled Double-gate MOSFETs: A Wigner Function-based Monte Carlo Approach Vortrag: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada; 19.01.2005 - 21.01.2005; in: "EUROSOI 2005 First Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits", (2005), S. 71 - 72. | |
| 623. | Pourfath, M., Kosina, H., Selberherr, S.: Rigorous Modeling of Carbon Nanotube Field Effect Transistors Poster: International Conference on New Phenomena in Mesoscopic Structures, Maui; 27.11.2005 - 02.12.2005; in: "Abstracts Collection Seventh International Conference on New Phenomena in Mesoscopic Systems Fifth International Conference on Surface and Interfaces in Mesoscopic Devices", (2005), S. 155 - 156. | |
| 622. | Sverdlov, V.: Shot noise suppression and enhancement in 2D Shot Noise Suppression and Enhancement at 2D Hopping and Single-Electron Arrays Vortrag: International Conference on Unsolved Problems of Noise (UPON), Gallipoli (eingeladen); 06.06.2005 - 10.06.2005; in: "4-th International Conference on Unsolved Problems of Noise and Fluctuations in Physics, Biology & High Technology", (2005), S. 177 - 182. | |
| 621. | Nentchev, A., Sabelka, R., Selberherr, S.: Simplification of Spacial Structures by Simulation with Periodic Boundary Conditions Vortrag: VLSI Multilevel Interconnection Conference (VMIC), Fremont; 03.10.2005 - 06.10.2005; in: "2005 Proceedings Twenty Second International VLSI Multilevel Interconnection Conference", (2005), S. 547 - 552. | |
| 620. | Wittmann, R., Puchner, H., Hinh, L., Ceric, H., Gehring, A., Selberherr, S.: Simulation of Dynamic NBTI Degradation for a 90 nm CMOS Technology Vortrag: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; S. 29 - 32. | |
| 619. | Li, L., Meller, G., Kosina, H.: Temperature and Field-dependence of Hopping Conduction in Organic Semiconductors Poster: European Conference on Organic Electronics and Related Phenomena (ECOER), Winterthur; 27.09.2005 - 30.09.2005; in: "3rd European Conference on Organic Electronics and Related Phenomena Book of Abstracts", (2005), S. 112 - 113. | |
| 618. | Ungersböck, E., Kosina, H.: The Effect of Degeneracy on Electron Transport in Strained Silicon Inversion Layers Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 311 - 314. https://doi.org/10.1109/SISPAD.2005.201535 | |
| 617. | Pourfath, M., Kosina, H., Cheong, B.-H., Park, W.J., Selberherr, S.: The Effect of Device Geometry on the Static and Dynamic Response of Carbon Nanotube Field Effect Transistors Vortrag: IEEE Conference on Nanotechnology (NANO), Nagoya; 11.07.2005 - 15.07.2005; in: "Proceedings of the IEEE Conference on Nanotechnology (NANO)", Cdrom Isbn: 0-7803-9200-0 (2005), 4 S. https://doi.org/10.1109/NANO.2005.1500641 | |
| 616. | Span, G., Wagner, M., Grasser, T.: Thermoelectric Power Generation Using Large Area pn-Junctions Vortrag: European Conference on Thermoelectrics (ECT), Nancy; 01.09.2005 - 02.09.2005; in: "The 3rd European Conference on Thermoelectrics Proceedings ECT2005", (2005), S. 72 - 75. | |
| 615. | Hollauer, Ch., Ceric, H., Selberherr, S.: Three-Dimensional Simulation of Stress Dependent Thermal Oxidation Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 183 - 186. https://doi.org/10.1109/SISPAD.2005.201503 | |
| 614. | Hollauer, Ch., Ceric, H., Selberherr, S.: Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress Vortrag: Meeting of the Electrochemical Society, Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Los Angeles; 16.10.2005 - 21.10.2005; in: "208th ECS Meeting", (2005), ISSN: 1091-8213; Paper-Nr. 734, 1 S. | |
| 613. | Al-Ani, E., Heinzl, R., Schwaha, P., Grasser, T., Selberherr, S.: Three-Dimensional State-Of-The-Art Topography Simulation Vortrag: European Simulation and Modeling Conference (ESMC), Porto; 24.10.2005 - 26.10.2005; in: "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8; S. 430 - 432. | |
| 612. | Holzer, S., Hollauer, Ch., Ceric, H., Wagner, S., Entner, R., Langer, E., Grasser, T., Selberherr, S.: Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis Poster: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN: 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; S. 620 - 623. | |
| 611. | Sverdlov, V., Gehring, A., Kosina, H., Selberherr, S.: Tunneling and Intersubband Coupling in Ultra-Thin Body Double-Gate MOSFETs Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble; 12.09.2005 - 16.09.2005; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", Cdrom Isbn: 0-7803-9204-3 (2005), ISBN: 0-7803-9203-5; S. 93 - 96. | |
| 610. | Pourfath, M., Gehring, A., Cheong, B.-H., Park, W.J., Kosina, H., Selberherr, S.: Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration Vortrag: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN: 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; S. 128 - 131. | |
| 609. | Heitzinger, C., Sheikholeslami, A., Fugger, J., Häberlen, O., Leicht, M., Selberherr, S.: A Case Study in Predictive Three-Dimensional Topography Simulation Based on a Level-Set Algorithm Vortrag: Meeting of the Electrochemical Society, Electrochemical Processing in ULSI and MEMS, San Antonio; 09.05.2004 - 13.05.2004; in: "205th ECS Meeting", (2004), S. 132 - 142. | |
| 608. | Entner, R., Gehring, A., Grasser, T., Selberherr, S.: A Comparison of Quantum Correction Models for the Three-Dimensional Simulation of FinFET Structures Poster: International Spring Seminar on Electronics Technology (ISSE), Sofia; 13.05.2004 - 16.05.2004; in: "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", IEEE, 1 (2004), ISBN: 0-7803-8422-9; S. 114 - 117. | |
| 607. | Grasser, T., Kosik, R., Jungemann, C., Kosina, H., Meinerzhagen, B., Selberherr, S.: A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Devices Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 24.10.2004 - 27.10.2004; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; S. 36 - 37. https://doi.org/10.1109/IWCE.2004.1407308 | |
| 606. | Ayalew, T., Grasser, T., Kosina, H., Selberherr, S.: Accurate Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 31.08.2004 - 04.09.2004; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), S. 92 - 93. | |
| 605. | Ayalew, T., Grasser, T., Kosina, H., Selberherr, S.: Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 295 - 298. https://doi.org/10.1007/978-3-7091-0624-2_69 | |
| 604. | Heitzinger, C., Ringhofer, Ch., Ahmed, S., Vasileska, D.: Accurate Three-Dimensional Simulation of Electron Mobility Including Electron-Electron and Electron-Dopant Interactions Vortrag: Meeting of the Electrochemical Society (ECS), Honolulu; 03.10.2004 - 08.10.2004; in: "Proc. 206th Meeting of the Electrochemical Society", (2004). | |
| 603. | Kosina, H.: Advanced Transport Models for Nanodevices Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany (eingeladen); 02.09.2004 - 04.09.2004; in: "From Sub-μm-CMOS to Nanotechnology SISPAD 2004 Companion Workshop", (2004), S. 35. | |
| 602. | Grasser, T., Jungemann, C., Kosina, H., Meinerzhagen, B., Selberherr, S.: Advanced Transport Models for Sub-Micrometer Devices Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany (eingeladen); 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 1 - 8. https://doi.org/10.1007/978-3-7091-0624-2_1 | |
| 601. | Palankovski, V., Selberherr, S.: Analysis of High Speed Heterostructure Devices Vortrag: International Conference on Microelectronics (MIEL), Nis (eingeladen); 16.05.2004 - 19.05.2004; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2004), ISBN: 0-7803-8166-1; S. 115 - 122. https://doi.org/10.1109/ICMEL.2004.1314567 | |
| 600. | Wessner, W., Hollauer, Ch., Hössinger, A., Selberherr, S.: Anisotropic Laplace Refinement for Three-Dimensional Oxidation Simulation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 165 - 168. https://doi.org/10.1007/978-3-7091-0624-2_39 | |
| 599. | Wagner, S., Grasser, T., Selberherr, S.: Benchmarking Linear Solvers with Semiconductor Simulation Examples Vortrag: International Conference on Scientific and Engineering Computation (ICSEC), Singapore; 30.06.2004 - 02.07.2004; in: "Proc. Intl. Conf. on Scientific & Engineering Computation (ICSEC)", (2004), 4 S. | |
| 598. | Wittmann, R., Hössinger, A., Selberherr, S.: Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe Vortrag: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Honolulu; 03.10.2004 - 08.10.2004; in: "206th ECS Meeting", (2004), ISBN: 1-56677-420-9; S. 181 - 192. | |
| 597. | Wagner, S., Grasser, T., Fischer, C., Selberherr, S.: Concepts and Implementation of an Advanced Equation Assembly Module Vortrag: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; 18.07.2004 - 21.07.2004; in: "The 8th World Multi-Conference on Systemics, Cybernetics and Informatics", (2004), ISBN: 980-6560-13-2; S. 150 - 155. | |
| 596. | Kosina, H., Selberherr, S.: Device Simulation Demands of Upcoming Microelectronic Devices Vortrag: Advanced Workshop on Frontiers in Electronics (WOFE), Aruba (eingeladen); 17.12.2004 - 22.12.2004; in: "Extended Abstracts of WOFE 2004", (2004), S. 6. | |
| 595. | Heitzinger, C., Ringhofer, Ch., Ahmed, S., Vasileska, D.: Efficient Simulation of the Full Coulomb Interaction in Three Dimensions Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 24.10.2004 - 27.10.2004; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; S. 24 - 25. https://doi.org/10.1109/IWCE.2004.1407300 | |
| 594. | Ayalew, T., Gehring, A., Grasser, T., Selberherr, S.: "Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Zürich; 04.10.2004 - 08.10.2004. | |
| 593. | Gehring, A., Selberherr, S.: Evolution of Current Transport Models for Engineering Applications Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA (eingeladen); 24.10.2004 - 27.10.2004; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; S. 20 - 21. https://doi.org/10.1109/IWCE.2004.1407298 | |
| 592. | Hössinger, A., Minixhofer, R., Selberherr, S.: Full Three-Dimensional Analysis of a Non-Volatile Memory Cell Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 129 - 132. https://doi.org/10.1007/978-3-7091-0624-2_31 | |
| 591. | Gehring, A., Selberherr, S.: Gate Current Modeling for MOSFETs Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Punta Cana (eingeladen); 03.11.2004 - 05.11.2004; in: "Proceedings of the ICCDCS 2004", (2004), ISBN: 0-7803-8777-5; S. 1 - 8. | |
| 590. | Gehring, A., Selberherr, S.: Gate Leakage Models for Device Simulation Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Beijing (eingeladen); 18.10.2004 - 21.10.2004; in: "7th International Conference on Solid-State and Integrated Circuits Technology Proceedings", R. Huang, M. Yu, J. Liou, T. Hiramoto, C. Claeys (Hrg.); IEEE Press, Volume II (2004), ISBN: 0-7803-8511-x; S. 971 - 976. | |
| 589. | Palankovski, V., Dhar, S., Kosina, H., Selberherr, S.: Improved Carrier Transport in Strained Si/Ge Devices Vortrag: Asia Pacific Microwave Conference (APMC), New Delhi (eingeladen); 15.12.2004 - 18.12.2004; in: "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9; 4 S. | |
| 588. | Pourfath, M., Ungersböck, E., Gehring, A., Cheong, B.-H., Park, W., Kosina, H., Selberherr, S.: Improving the Ambipolar Behavior of Schottky Barrier Carbon Nanotube Field Effect Transistors Vortrag: European Solid-State Device Research Conference (ESSDERC), Leuven; 21.09.2004 - 23.09.2004; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", Institute of Electrical and Electronics Engineers, (2004), ISBN: 0780384784; S. 429 - 432. | |
| 587. | Wessner, W., Wagner, S., Grasser, T., Selberherr, S.: Meshing Aspects on Three-Dimensional Fin-Fet Device Simulations Vortrag: Asia Pacific Microwave Conference (APMC), New Delhi; 15.12.2004 - 18.12.2004; in: "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9; 4 S. | |
| 586. | Wagner, S., Grasser, T., Selberherr, S.: Mixed-Mode Device and Circuit Simulation Vortrag: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Szczecin (eingeladen); 24.06.2004 - 26.06.2004; in: "Proceedings of the 11th International Conference on Mixed Design of Integrated Circuits and Systems MIXDES", (2004), ISBN: 83-919289-7-7; S. 36 - 41. | |
| 585. | Kosina, H., Palankovski, V.: Mobility Enhancement in Strained CMOS Devices Vortrag: Symposium on Nano Device Technology (SNDT), Hsinchu (eingeladen); 12.05.2004 - 13.05.2004; in: "Proceedings of the Symposium on Nano Device Technology", (2004), S. 101 - 105. | |
| 584. | Dhar, S., Kosina, H., Palankovski, V., Ungersböck, E., Selberherr, S.: Modeling of Electron Mobility in Strained Si Devices Vortrag: Semiconductor Advances for Future Electronics (SAFE), Veldhoven, Netherlands; 25.11.2004 - 26.11.2004; in: "Proceedings of SAFE 2004", Technology Foundation, Utrecht, (2004), ISBN: 90-73461-43-x; S. 793 - 796. https://doi.org/10.13140/2.1.1839.7126 | |
| 583. | Gehring, A., Selberherr, S.: Modeling of Wearout, Leakage, and Breakdown of Gate Dielectrics Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu; 05.07.2004 - 08.07.2004; in: "11th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2004), ISBN: 0-7803-8454-7; S. 61 - 64. | |
| 582. | Wittmann, R., Hössinger, A., Selberherr, S.: Monte Carlo Simulation of Ion Implantation in Silicon-Germanium Alloys Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 169 - 172. https://doi.org/10.1007/978-3-7091-0624-2_40 | |
| 581. | Pourfath, M., Ungersböck, E., Gehring, A., Park, W., Cheong, B.-H., Kosina, H., Selberherr, S.: Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 24.10.2004 - 27.10.2004; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; S. 237 - 238. https://doi.org/10.1109/IWCE.2004.1407414 | |
| 580. | Kim, S.-C., Bahng, W., Kim, N.-K., Ayalew, T., Grasser, T., Selberherr, S.: Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 31.08.2004 - 04.09.2004; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), S. 492 - 493. | |
| 579. | Ayalew, T., Wagner, S., Grasser, T., Selberherr, S.: Numerical Simulation of Microwave MESFETs in 4H-SiC Fabricated Using Epitaxial Layers on Semi-Insulating Substrates Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 31.08.2004 - 04.09.2004; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), S. 76 - 77. | |
| 578. | Palankovski, V., Selberherr, S.: Numerical Simulation of Selected Semiconductor Devices Vortrag: International Spring Seminar on Electronics Technology (ISSE), Sofia; 13.05.2004 - 16.05.2004; in: "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", IEEE, 1 (2004), ISBN: 0-7803-8422-9; S. 122 - 125. https://doi.org/10.1109/ISSE.2004.1490390 | |
| 577. | Gehring, A., Selberherr, S.: On the Calculation of Quasi-Bound States and Their Impact on Direct Tunneling in CMOS Devices Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 25 - 28. https://doi.org/10.1007/978-3-7091-0624-2_6 | |
| 576. | Heitzinger, C., Ringhofer, Ch., Ahmed, S., Vasileska, D.: On the Efficient Simulation of Electron-Electron Interactions in Nanoscale MOSFETs Poster: Trends in Nanotechnology Conference (TNT), Segovia; 13.09.2004 - 17.09.2004; in: "Proceedings Trends in Nanotechnology 2004", (2004). | |
| 575. | Kosik, R., Grasser, T., Entner, R., Dragosits, K.: On the Highest Order Moment Closure Problem Poster: International Spring Seminar on Electronics Technology (ISSE), Sofia; 13.05.2004 - 16.05.2004; in: "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", IEEE, 1 (2004), ISBN: 0-7803-8422-9; S. 118 - 120. | |
| 574. | Grasser, T., Kosina, H., Selberherr, S.: On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 109 - 112. https://doi.org/10.1007/978-3-7091-0624-2_26 | |
| 573. | Holzer, S., Sheikholeslami, A., Wagner, S., Heitzinger, C., Grasser, T., Selberherr, S.: Optimization and Inverse Modeling for TCAD Applications Vortrag: Symposium on Nano Device Technology (SNDT), Hsinchu; 12.05.2004 - 13.05.2004; in: "Proceedings of the Symposium on Nano Device Technology", (2004), S. 113 - 116. | |
| 572. | Ungersböck, E., Pourfath, M., Gehring, A., Kosina, H., Cheong, B.-H., Selberherr, S.: Optimization of Carbon Nanotube Field Effect Transistors Poster: Symposium on Nano Device Technology (SNDT), Hsinchu; 12.05.2004 - 13.05.2004; in: "Proceedings of the Symposium on Nano Device Technology", (2004), S. 117 - 120. | |
| 571. | Pourfath, M., Ungersböck, E., Gehring, A., Cheong, B.-H., Park, W., Kosina, H., Selberherr, S.: Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors Vortrag: Nano and Giga Challenges in Microelectronics (NGCM), Krakau; 13.09.2004 - 17.09.2004; in: "Nano and Giga Challenges in Microelectronics Book of Abstracts", (2004), S. 201. | |
| 570. | Wagner, S., Grasser, T., Selberherr, S.: Performance Evaluation of Linear Solvers Employed for Semiconductor Device Simulation Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 351 - 354. https://doi.org/10.1007/978-3-7091-0624-2_83 | |
| 569. | Wagner, S., Grasser, T., Selberherr, S.: Physical Modeling of Semiconductor Devices for Microwave Applications Vortrag: Asia Pacific Microwave Conference (APMC), New Delhi (eingeladen); 15.12.2004 - 18.12.2004; in: "Asia Pacific Microwave Conference 2004. Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9; 4 S. | |
| 568. | Ayalew, T., Kim, S., Grasser, T., Selberherr, S.: SiC Power Rectifier With Improved Switching Performance "Numerical Analysis of Merged PiN Schottky Diode" Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 31.08.2004 - 04.09.2004; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), S. 476 - 477. | |
| 567. | Ceric, H., Sabelka, R., Holzer, S., Wessner, W., Wagner, S., Grasser, T., Selberherr, S.: The Evolution of the Resistance and Current Density During Electromigration Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 331 - 334. https://doi.org/10.1007/978-3-7091-0624-2_78 | |
| 566. | Pourfath, M., Ungersböck, E., Gehring, A., Cheong, B.-H., Kosina, H., Selberherr, S.: Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 149 - 152. https://doi.org/10.1007/978-3-7091-0624-2_35 | |
| 565. | Sheikholeslami, A., Heitzinger, C., Al-Ani, E., Heinzl, R., Grasser, T., Selberherr, S.: Three-Dimensional Surface Evolution Using a Level Set Method Poster: Iranian Ph.D. Students Seminar on Computer Science, Mathematics and Statistics (ICSMS), Paris; 01.12.2004; in: "Proceedings of the Iranian Ph.D. Students Seminar on Computer Science, Mathematics and Statistics (ICSMS)", (2004). | |
| 564. | Sheikholeslami, A., Heitzinger, C., Badrieh, F., Puchner, H., Selberherr, S.: Three-Dimensional Topography Simulation Based on a Level Set Method Vortrag: International Spring Seminar on Electronics Technology (ISSE), Sofia; 13.05.2004 - 16.05.2004; in: "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", IEEE, 2 (2004), ISBN: 0-7803-8422-9; S. 263 - 265. | |
| 563. | Sheikholeslami, A., Heitzinger, C., Grasser, T., Selberherr, S.: Three-Dimensional Topography Simulation for Deposition and Etching Processes Using a Level Set Method Vortrag: International Conference on Microelectronics (MIEL), Nis; 16.05.2004 - 19.05.2004; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2004), ISBN: 0-7803-8166-1; S. 241 - 244. https://doi.org/10.1109/ICMEL.2004.1314606 | |
| 562. | Gehring, A., Kosina, H.: Wigner-Function Based Simulation of Classic and Ballistic Transport in Scaled DG-MOSFETs Using the Monte Carlo Method Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 24.10.2004 - 27.10.2004; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; S. 227 - 228. https://doi.org/10.1109/IWCE.2004.1407409 | |
| 561. | Wagner, S., Palankovski, V., Grasser, T., Röhrer, G., Selberherr, S.: A Direct Extraction Feature for Scattering Parameters of SiGe-HBTs Vortrag: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 15.01.2003 - 17.01.2003; in: "First International SiGe Technology and Device Meeting", (2003), S. 83 - 84. | |
| 560. | Wagner, S., Grasser, T., Fischer, C., Selberherr, S.: A Generally Applicable Approach for Advanced Equation Assembling Vortrag: International Conference on Software Engineering and Applications (SEA), Marina del Rey; 03.11.2003 - 05.11.2003; in: "Proceedings of the 7th IASTED International Conference on Software Engineering and Applications (SEA)", (2003), ISBN: 088-9863-94-6; S. 494 - 499. | |
| 559. | Sheikholeslami, A., Heitzinger, C., Selberherr, S.: A Method for Generating Structurally Aligned Grids Using a Level Set Approach Vortrag: European Simulation Multiconference (ESM), Nottingham; 09.06.2003 - 11.06.2003; in: "Proc. 17th European Simulation Multiconference: Modelling and Simulation", (2003), ISBN: 3-936150-25-7; S. 496 - 501. | |
| 558. | Heitzinger, C., Sheikholeslami, A., Park, J.M., Selberherr, S.: A Method for Generating Structurally Aligned High Quality Grids and its Application to the Simulation of a Trench Gate MOSFET Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; S. 457 - 460. | |
| 557. | Kosina, H., Nedjalkov, M., Selberherr, S.: A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations Vortrag: International Workshop on Computational Electronics (IWCE), Rome, Italy; 25.05.2003 - 28.05.2003; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2003), S. 35 - 36. | |
| 556. | Hössinger, A., Cervenka, J., Selberherr, S.: A Multistage Smoothing Algorithm for Coupling Cellular and Polygonal Datastructures Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; S. 259 - 262. https://doi.org/10.1109/SISPAD.2003.1233686 | |
| 555. | Nedjalkov, M., Kosina, H., Selberherr, S.: A Quasi-Particle Model of the Electron - Wigner Potential Interaction Poster: International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS), Modena; 28.07.2003 - 01.08.2003; in: "Proceedings HCIS-13", (2003), S. Th 5-1. | |
| 554. | Wagner, S., Grasser, T., Fischer, C., Selberherr, S.: A Simulator Module for Advanced Equation Assembling Vortrag: European Simulation Symposium (ESS), Delft; 26.10.2003 - 29.10.2003; in: "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1; S. 55 - 64. | |
| 553. | Kosina, H., Nedjalkov, M., Selberherr, S.: A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 04.06.2003 - 08.06.2003; in: "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), S. 24. | |
| 552. | Nedjalkov, M., Kosina, H., Selberherr, S.: A Weight Decomposition Approach to the Sign Problem in Wigner Transport Simulations Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 04.06.2003 - 08.06.2003; in: "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), S. 35 - 36. | |
| 551. | Smirnov, S., Kosina, H., Nedjalkov, M., Selberherr, S.: A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 04.06.2003 - 08.06.2003; in: "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), S. 40 - 41. | |
| 550. | Wagner, S., Grasser, T., Fischer, C., Selberherr, S.: Advanced Equation Assembling Techniques for Numerical Simulators Vortrag: European Simulation and Modeling Conference (ESMC), Naples; 27.10.2003 - 29.10.2003; in: "The 2003 European Simulation and Modelling Conference", (2003), ISBN: 90-77381-04-x; S. 390 - 394. | |
| 549. | Heitzinger, C., Hössinger, A., Selberherr, S.: An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results Vortrag: International Symposium on Mathematical Modeling (MATHMOD), Wien; 05.02.2003 - 07.02.2003; in: "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9; S. 702 - 711. | |
| 548. | Gehring, A., Grasser, T., Kosina, H., Selberherr, S.: An Energy Transport Gate Current Model Based on a Non-Maxwellian Energy Distribution Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Francisco; 23.02.2003 - 27.02.2003; in: "Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show", (2003), ISBN: 0-9728422-1-7; S. 48 - 51. | |
| 547. | Ungersböck, E., Gehring, A., Kosina, H., Selberherr, S., Cheong, B.-H., Choi, W. B.: Analysis of Carrier Transport in Carbon Nanotube FET Devices Vortrag: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 16.12.2003 - 20.12.2003; in: "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6; S. 1059 - 1061. | |
| 546. | Gehring, A., Kosina, H., Selberherr, S.: Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method Vortrag: International Workshop on Computational Electronics (IWCE), Rome, Italy; 25.05.2003 - 28.05.2003; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2003), S. 105 - 106. | |
| 545. | Wessner, W., Ceric, H., Heitzinger, C., Hössinger, A., Selberherr, S.: Anisotropic Mesh Adaption Governed by a Hessian Matrix Metric Vortrag: European Simulation Symposium (ESS), Delft; 26.10.2003 - 29.10.2003; in: "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1; S. 41 - 46. | |
| 544. | Wessner, W., Hössinger, A., Selberherr, S.: Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation Poster: Informationstagung Mikroelektronik (ME), Wien; 01.10.2003 - 02.10.2003; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7; S. 523 - 528. | |
| 543. | Sheikholeslami, A., Heitzinger, C., Selberherr, S., Badrieh, F., Puchner, H.: Capacitances in the Backend of a 100nm CMOS Process and their Predictive Simulation Poster: Informationstagung Mikroelektronik (ME), Wien; 01.10.2003 - 02.10.2003; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7; S. 481 - 486. | |
| 542. | Palankovski, V., Selberherr, S.: Challenges in Modeling of High-Speed Electron Devices Vortrag: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras (eingeladen); 16.12.2003 - 20.12.2003; in: "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6; S. 45 - 50. | |
| 541. | Grasser, T.: Closure Relations for Macroscopic Transport Models Vortrag: International Semiconductor Device Research Symposium (ISDRS), Washington (eingeladen); 10.12.2003 - 12.12.2003; in: "2003 International Semiconductor Device Research Symposium", (2003), ISBN: 0-7803-8139-4; S. 504 - 505. | |
| 540. | Kosina, H., Klimeck, G., Nedjalkov, M., Selberherr, S.: Comparison of Numerical Quantum Device Models Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; S. 171 - 174. https://doi.org/10.1109/SISPAD.2003.1233664 | |
| 539. | Gehring, A., Kosina, H., Grasser, T., Selberherr, S.: Consistent Comparison of Tunneling Models for Device Simulation Poster: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 20.03.2003 - 21.03.2003; in: "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6; S. 131 - 134. | |
| 538. | Palankovski, V., Selberherr, S.: Critical Modeling Issues of SiGe Semiconductor Devices Vortrag: Symposium on Diagnostics and Yield, Warsaw (eingeladen); 22.06.2003 - 25.06.2003; in: "Proceedings Symposium on Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI era", (2003), S. 1 - 11. | |
| 537. | Cervenka, J., Hössinger, A., Minixhofer, R., Grasser, T., Selberherr, S.: Dreidimensionale Modellierung Elektronischer Bauteile Poster: Informationstagung Mikroelektronik (ME), Wien; 01.10.2003 - 02.10.2003; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7; S. 377 - 382. | |
| 536. | Wessner, W., Heitzinger, C., Hössinger, A., Selberherr, S.: Error Estimated Driven Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; S. 109 - 112. https://doi.org/10.1109/SISPAD.2003.1233649 | |
| 535. | Gehring, A., Harasek, S., Bertagnolli, E., Selberherr, S.: Evaluation of ZrO2 Gate Dielectrics for Advanced CMOS Devices Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; S. 473 - 476. | |
| 534. | Holzer, S., Minixhofer, R., Heitzinger, C., Fellner, J., Grasser, T., Selberherr, S.: Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Structures Vortrag: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Aix-en-Provence; 24.09.2003 - 26.09.2003; in: "International Workshop on Thermal Investigations of ICs and Systems", (2003), ISBN: 2-848-130202; S. 263 - 268. | |
| 533. | Heitzinger, C., Sheikholeslami, A., Badrieh, F., Puchner, H., Selberherr, S.: Feature Scale Simulation of Advanced Etching Processes Vortrag: Meeting of the Electrochemical Society, Physical Electrochemistry, Orlando; 12.10.2003 - 16.10.2003; in: "204th ECS Meeting", (2003), ISBN: 1-56677-398-9; S. 1259. | |
| 532. | Badrieh, F., Puchner, H., Heitzinger, C., Sheikholeslami, A., Selberherr, S.: From Feature Scale Simulation to Backend Simulation for a 100nm CMOS Process Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; S. 441 - 444. | |
| 531. | Park, J.M., Grasser, T., Selberherr, S.: High-Voltage Super-Junction SOI-LDMOSFETs with Reduced Drift Length Vortrag: Meeting of the Electrochemical Society (ECS), Paris; 26.04.2003 - 02.05.2003; in: "203rd ECS Meeting", (2003), ISBN: 1-56677-347-4; S. 273 - 282. | |
| 530. | Wittmann, R., Hössinger, A., Selberherr, S.: Improvement of the Statistical Accuracy for the Three-Dimensional Monte Carlo Simulation of Ion Implantation Vortrag: European Simulation Symposium (ESS), Delft; 26.10.2003 - 29.10.2003; in: "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1; S. 35 - 40. | |
| 529. | Ayalew, T., Gehring, A., Park, J.M., Grasser, T., Selberherr, S.: "Improving SiC Lateral DMOSFET Reliability under High Field Stress"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon; 07.10.2003 - 10.10.2003. | |
| 528. | Dragosits, K., Palankovski, V., Selberherr, S.: Mobility Modeling in Presence of Quantum Effects Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; S. 271 - 274. https://doi.org/10.1109/SISPAD.2003.1233689 | |
| 527. | Palankovski, V., Selberherr, S.: Modeling High Speed Semiconductor Devices of Modern Communication Systems Vortrag: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; 27.07.2003 - 30.07.2003; in: "Proc. 7th World Multiconference on Systemics, Cybernetics and Informatics", (2003), ISBN: 980-6560-01-9; S. 97 - 102. | |
| 526. | Ayalew, T., Park, J.M., Gehring, A., Grasser, T., Selberherr, S.: Modeling and Simulation of SiC MOSFETs Vortrag: International Conference on Applied Modelling and Simulation, Marbella; 03.09.2003 - 05.09.2003; in: "Proceedings of the Twelfth IASTED International Conference on Applied Simulation and Modelling", (2003), ISBN: 0-88986-384-9; S. 552 - 556. | |
| 525. | Gehring, A., Jimenez-Molinos, F., Kosina, H., Palma, A., Gamiz, F., Selberherr, S.: "Modeling of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM Devices"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon; 07.10.2003 - 10.10.2003. | |
| 524. | Ceric, H., Hössinger, A., Binder, T., Selberherr, S.: Modeling of Segregation on Material Interfaces by Means of the Finite Element Method Vortrag: International Symposium on Mathematical Modeling (MATHMOD), Wien; 05.02.2003 - 07.02.2003; in: "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9; S. 139 - 145. | |
| 523. | Gurov, T.V., Nedjalkov, M., Kosina, H.: Novel Monte Carlo Algorithms for Ultrafast Transport Phenomena in Semiconductors Vortrag: Seminar on Monte Carlo Methods (MCM), Berlin; 15.09.2003 - 19.09.2003; in: "Book of Abstracts MCM-2003", (2003), S. 10. | |
| 522. | Palankovski, V., Wagner, S., Selberherr, S.: Numerical Analysis of Compound Semiconductor RF Devices Vortrag: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), San Diego (eingeladen); 09.11.2003 - 12.11.2003; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2003), ISBN: 0-7803-7833-4; S. 107 - 110. https://doi.org/10.1109/GAAS.2003.1252374 | |
| 521. | Wagner, S., Palankovski, V., Quay, R., Grasser, T., Selberherr, S.: Numerical Simulation of High-Speed High-Breakdown Indium Phosphide HBTs Vortrag: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 16.12.2003 - 20.12.2003; in: "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6; S. 836 - 838. | |
| 520. | Wagner, S., Palankovski, V., Röhrer, G., Grasser, T., Selberherr, S.: Numerische Berechnung von Silizium-Germanium Heterostruktur-Bipolartransistoren Poster: Informationstagung Mikroelektronik (ME), Wien; 01.10.2003 - 02.10.2003; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7; S. 383 - 388. | |
| 519. | Nedjalkov, M., Atanassov, E., Kosina, H., Selberherr, S.: Operator-Split Method for Variance Reduction in Stochastic Solutions of the Wigner Equation Vortrag: Seminar on Monte Carlo Methods (MCM), Berlin; 15.09.2003 - 19.09.2003; in: "IVth IMACS Seminar on Monte Carlo Methods", (2003), S. 6. | |
| 518. | Minixhofer, R., Holzer, S., Heitzinger, C., Fellner, J., Grasser, T., Selberherr, S.: Optimization of Electrothermal Material Parameters Using Inverse Modeling Vortrag: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; S. 363 - 366. | |
| 517. | Palankovski, V., Selberherr, S.: Optimization of SiGe HBTs for Industrial Applications Vortrag: International SiGe Technology and Device Meeting (ISTDM), Nagoya (eingeladen); 15.01.2003 - 17.01.2003; in: "First International SiGe Technology and Device Meeting", (2003), S. 267 - 268. | |
| 516. | Heitzinger, C., Sheikholeslami, A., Puchner, H., Selberherr, S.: Predictive Simulation of Void Formation During the Deposition of Silicon Nitride and Silicon Dioxide Films Vortrag: Meeting of the Electrochemical Society (ECS), Paris; 26.04.2003 - 02.05.2003; in: "203rd ECS Meeting", (2003), ISBN: 1-56677-347-4; S. 356 - 365. | |
| 515. | Kosina, H., Nedjalkov, M., Selberherr, S.: Quantum Monte Carlo Simulation of a Resonant Tunneling Diode Including Phonon Scattering Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Francisco; 23.02.2003 - 27.02.2003; in: "Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show", (2003), ISBN: 0-9728422-1-7; S. 190 - 193. | |
| 514. | Grasser, T., Kosina, H., Selberherr, S.: Reformulation of Macroscopic Transport Models Based on the Moments of the Scattering Integral Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; S. 63 - 66. https://doi.org/10.1109/SISPAD.2003.1233638 | |
| 513. | Palankovski, V., Röhrer, G., Grasser, T., Smirnov, S., Kosina, H., Selberherr, S.: Rigorous Modeling Approach to Numerical Simulation of SiGe-HBTs Poster: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 15.01.2003 - 17.01.2003; in: "First International SiGe Technology and Device Meeting", (2003), S. 97 - 98. | |
| 512. | Palankovski, V., Selberherr, S.: Rigorous Modeling of High-Speed Semiconductor Devices Vortrag: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong (eingeladen); 16.12.2003 - 18.12.2003; in: "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2003), ISBN: 0-7803-7749-4; S. 127 - 132. https://doi.org/10.1109/EDSSC.2003.1283498 | |
| 511. | Grasser, T., Kosina, H., Selberherr, S.: Rigorous Modeling of Mobilities and Relaxation Times Using Six Moments of the Distribution Function Vortrag: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 20.03.2003 - 21.03.2003; in: "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6; S. 105 - 108. | |
| 510. | Ayalew, T., Park, J.M., Gehring, A., Grasser, T., Selberherr, S.: Silicon Carbide Accumulation-Mode Laterally Diffused MOSFET Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; S. 581 - 584. | |
| 509. | Ungersböck, E., Gehring, A., Kosina, H., Selberherr, S., Cheong, B.-H., Choi, W. B.: Simulation of Carrier Transport in Carbon Nanotube Field Effect Transistors Vortrag: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; S. 411 - 414. | |
| 508. | Hollauer, Ch., Ceric, H., Selberherr, S.: Simulation of Thermal Oxidation: A Three-Dimensional Finite Element Approach Vortrag: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; S. 383 - 386. | |
| 507. | Kosina, H., Nedjalkov, M., Selberherr, S.: Solution of the Space-Dependent Wigner Equation Using a Particle Model Vortrag: Seminar on Monte Carlo Methods (MCM), Berlin; 15.09.2003 - 19.09.2003; in: "IVth IMACS Seminar on Monte Carlo Methods", (2003), S. 6. | |
| 506. | Jimenez-Molinos, F., Palma, A., Gehring, A., Gamiz, F., Kosina, H., Selberherr, S.: Static and Transient Simulation of Inelastic Trap-Assisted Tunneling Vortrag: Workshop on Modeling and Simulation of Electron Devices (MSED), Barcelona; 16.10.2003 - 17.10.2003; in: "14th Workshop on Modeling and Simulation of Electron Devices", (2003), ISBN: 84-688-1314-1; S. 65 - 68. | |
| 505. | Wittmann, R., Hössinger, A., Selberherr, S.: Statistical Analysis for the Three-Dimensional Monte Carlo Simulation of Ion Implantation Vortrag: Industrial Simulation Conference (ISC), Valencia; 09.06.2003 - 11.06.2003; in: "Industrial Simulation Conference 2003", (2003), ISBN: 90-77381-03-1; S. 159 - 163. | |
| 504. | Smirnov, S., Kosina, H., Selberherr, S.: Substrate Orientation-Dependence of Electron Mobility in Strained SiGe Layers Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; S. 55 - 58. https://doi.org/10.1109/SISPAD.2003.1233636 | |
| 503. | Hollauer, Ch., Ceric, H., Selberherr, S.: Three-Dimensional Modeling of Thermal Oxidation of Silicon by Means of the Finite Element Method Vortrag: Industrial Simulation Conference (ISC), Valencia; 09.06.2003 - 11.06.2003; in: "Industrial Simulation Conference 2003", (2003), ISBN: 90-77381-03-1; S. 154 - 158. | |
| 502. | Kosina, H.: VMC: a Code for Monte Carlo Simulation of Quantum Transport Vortrag: MEL-ARI/NID Workshop, Cork; 23.06.2003 - 25.06.2003; in: "Proc. 12th MEL-ARI/NID Workshop", (2003). | |
| 501. | Heitzinger, C., Selberherr, S.: A Calibrated Model for Silicon Self-Interstitial Cluster Formation and Dissolution Vortrag: International Conference on Microelectronics (MIEL), Nis; 12.05.2002 - 15.05.2002; in: "Proceedings of the International Conference on Microelectronics (MIEL)", 2 (2002), S. 431 - 434. https://doi.org/10.1109/MIEL.2002.1003291 | |
| 500. | Gehring, A., Grasser, T., Kosina, H., Selberherr, S.: A New Gate Current Model Accounting for a Non-Maxwellian Electron Energy Distribution Function Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 235 - 238. https://doi.org/10.1109/SISPAD.2002.1034560 | |
| 499. | Kosina, H., Nedjalkov, M., Selberherr, S.: A Particle Model for Wigner Transport through Tunneling Structures Vortrag: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 25.09.2002 - 28.09.2002; in: "Advances in Simulation, Systems Theory, and Systems Engineering", WSEAS Press, (2002), ISBN: 960-8052-70-x; S. 136 - 139. | |
| 498. | Binder, T., Ceric, H., Hössinger, A., Selberherr, S.: A Strategy to Enforce the Discrete Minimax Principle on Finite Element Meshes Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 183 - 186. https://doi.org/10.1109/SISPAD.2002.1034547 | |
| 497. | Ceric, H., Selberherr, S.: An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 253 - 256. https://doi.org/10.1109/SISPAD.2002.1034566 | |
| 496. | Grasser, T., Kosina, H., Heitzinger, C., Selberherr, S.: An Impact Ionization Model Including an Explicit Cold Carrier Population Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 21.04.2002 - 25.04.2002; in: "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1; S. 572 - 575. | |
| 495. | Klima, R., Grasser, T., Selberherr, S.: Controlling Scheme of the Device Simulator MINIMOS-NT Vortrag: European Simulation Symposium (ESS), Dresden; 23.10.2002 - 26.10.2002; in: "Proceedings European Simulation Symposium", (2002), ISBN: 3-936150-22-2; S. 80 - 84. | |
| 494. | Palankovski, V., Wagner, S., Grasser, T., Schultheis, R., Selberherr, S.: Direct S-Parameter Extraction by Physical Two-Dimensional Device AC-Simulation Poster: International Symposium on Compound Semiconductors (ISCS), Lausanne; 07.10.2002 - 10.10.2002; in: "Proceedings of the Intl. Symposium on Compound Semiconductors", (2002), ISBN: 0-7503-0942-3; S. 303 - 306. | |
| 493. | Gopinath, V., Aronowitz, S., Palankovski, V., Selberherr, S.: Effects of Stress-Induced Bandgap Narrowing on Reverse-Biased Junction Behavior Poster: European Solid-State Device Research Conference (ESSDERC), Florence; 24.09.2002 - 26.09.2002; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2; S. 631 - 634. https://doi.org/10.1109/ESSDERC.2002.195010 | |
| 492. | Ceric, H., Selberherr, S.: Electromigration Induced Evolution of Voids in Current Crowding Areas of Interconnects Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 08.07.2002 - 12.07.2002; in: "Proceedings of the 13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2002), ISBN: 0-7803-7416-9; S. 140 - 144. | |
| 491. | Fleischmann, P., Selberherr, S.: Enhanced Advancing Front Delaunay Meshing in TCAD Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 99 - 102. https://doi.org/10.1109/SISPAD.2002.1034526 | |
| 490. | Park, J.M., Klima, R., Selberherr, S.: High-Voltage Lateral Trench Gate SOI LDMOSFETs Poster: International Seminar on Power Semiconductors (ISPS), Prague; 04.09.2002 - 06.09.2002; in: "Proceedings ISPS 2002", (2002), ISBN: 80-01-02595-0; S. 241 - 244. | |
| 489. | Minixhofer, R., Röhrer, G., Selberherr, S.: Implementation of an Automated Interface for Integration of TCAD with Semiconductor Fabrication Vortrag: European Simulation Symposium (ESS), Dresden; 23.10.2002 - 26.10.2002; in: "Proceedings European Simulation Symposium", (2002), ISBN: 3-936150-22-2; S. 70 - 74. | |
| 488. | Smirnov, S., Kosina, H., Selberherr, S.: Investigation of the Electron Mobility in Strained Si1-x Gex at High Ge Composition Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 29 - 32. https://doi.org/10.1109/SISPAD.2002.1034509 | |
| 487. | Park, J.M., Klima, R., Selberherr, S.: Lateral Trench Gate Super-Junction SOI-LDMOSFETs with Low On-Resistance Vortrag: European Solid-State Device Research Conference (ESSDERC), Florence; 24.09.2002 - 26.09.2002; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2; S. 283 - 286. | |
| 486. | Rodriguez-Torres, R., Gutierrez, E., Sarmiento, A., Selberherr, S.: Macro-Modeling for MOS Device Simulation Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Oranjestad; 17.04.2002 - 19.04.2002; in: "Proceedings of the ICCDCS 2002", D012 (2002), ISBN: 0-7803-7380-4; S. 1 - 5. | |
| 485. | Grasser, T., Gehring, A., Selberherr, S.: Macroscopic Transport Models for Microelectronics Devices Vortrag: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando (eingeladen); 14.07.2002 - 18.07.2002; in: "The 6th World Multiconference on Systemics, Cybernetics and Informatics", (2002), ISBN: 980-07-8150-1; S. 223 - 228. | |
| 484. | Gehring, A., Grasser, T., Selberherr, S.: Non-Parabolicity and Non-Maxwellian Effects on Gate Oxide Tunneling Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 21.04.2002 - 25.04.2002; in: "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1; S. 560 - 563. | |
| 483. | Heitzinger, C., Selberherr, S., Fugger, J., Häberlen, O.: On Increasing the Accuracy of Simulations of Deposition and Etching Processes Using Radiosity and the Level Set Method Vortrag: European Solid-State Device Research Conference (ESSDERC), Florence; 24.09.2002 - 26.09.2002; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2; S. 347 - 350. | |
| 482. | Heitzinger, C., Selberherr, S.: On the Topography Simulation of Memory Cell Trenches for Semiconductor Manufacturing Deposition Processes Using the Level Set Method Vortrag: European Simulation Multiconference (ESM), Darmstadt; 03.06.2002 - 05.06.2002; in: "16th European Simulation Multiconference", (2002), ISBN: 90-77039-07-4; S. 653 - 660. | |
| 481. | Heitzinger, C., Sheikholeslami, A., Selberherr, S.: Predictive Simulation of Etching and Deposition Processes Using the Level Set Method Poster: International Workshop on Challenges in Predictive Process Simulation (ChiPPS), Prague; 13.10.2002 - 17.10.2002; in: "ChiPPS-2002 Challenges in Predictive Process Simulation", (2002), S. 65 - 66. | |
| 480. | Grasser, T., Gehring, A., Selberherr, S.: Recent Advances in Transport Modeling for Miniaturized CMOS Devices Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Aruba (eingeladen); 17.04.2002 - 19.04.2002; in: "Proceedings of the ICCDCS 2002", D027 (2002), ISBN: 0-7803-7380-4; S. 1 - 8. | |
| 479. | Heitzinger, C., Fugger, J., Häberlen, O., Selberherr, S.: Simulation and Inverse Modeling of TEOS Deposition Processes Using a Fast Level Set Method Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 191 - 194. https://doi.org/10.1109/SISPAD.2002.1034549 | |
| 478. | Gehring, A., Jimenez-Molinos, F., Palma, A., Kosina, H., Selberherr, S.: Simulation of Non-Volatile Memory Cells by Accounting for Inelastic Trap-Assisted Tunneling Current Vortrag: Workshop on Ultimate Integration of Silicon (ULIS), München; 07.03.2002 - 08.03.2002; in: "3rd European Workshop on Ultimate Integration of Silicon", (2002), S. 15 - 18. | |
| 477. | Gritsch, M., Kosina, H., Grasser, T., Selberherr, S.: Simulation of a "Well Tempered" SOI MOSFET using an Enhanced Hydrodynamic Transport Model Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 195 - 198. https://doi.org/10.1109/SISPAD.2002.1034550 | |
| 476. | Ceric, H., Selberherr, S.: "Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Rimini; 07.10.2002 - 11.10.2002. | |
| 475. | Wagner, S., Palankovski, V., Grasser, T., Schultheis, R., Selberherr, S.: Small-Signal Analysis and Direct S-Parameter Extraction Vortrag: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester; 18.11.2002 - 19.11.2002; in: "The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2002), ISBN: 0-7803-7530-0; S. 50 - 55. https://doi.org/10.1109/EDMO.2002.1174929 | |
| 474. | Nedjalkov, M., Kosina, H., Selberherr, S.: Stochastic Interpretation of the Wigner Transport in Nanostructures Vortrag: International Conference on Low Dimensional Structures and Devices, Fortaleza-Ceara; 08.12.2002 - 13.12.2002; in: "Fourth International Conference on Low Dimensional Structures and Devices", (2002), S. 5. | |
| 473. | Klima, R., Grasser, T., Selberherr, S.: The Control System of the Device Simulator MINIMOS-NT Vortrag: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 25.09.2002 - 28.09.2002; in: "Advances in Simulation, Systems Theory, and Systems Engineering", WSEAS Press, (2002), ISBN: 960-8052-70-x; S. 281 - 284. | |
| 472. | Gritsch, M., Kosina, H., Grasser, T., Selberherr, S., Linton, T., Singh, S., Yu, S., Giles, M.: The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 21.04.2002 - 25.04.2002; in: "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1; S. 544 - 547. | |
| 471. | Palankovski, V., Klima, R., Schultheis, R., Selberherr, S.: Three-Dimensional Analysis of Leakage Currents in III-V HBTs Vortrag: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Monterey; 20.10.2002 - 23.10.2002; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2002), ISBN: 0-7803-7447-9; S. 229 - 232. https://doi.org/10.1109/GAAS.2002.1049066 | |
| 470. | Rodriguez-Torres, R., Gutierrez, E., Klima, R., Selberherr, S.: Three-Dimensional Analysis of a MAGFET at 300 K and 77 K Vortrag: European Solid-State Device Research Conference (ESSDERC), Florence; 24.09.2002 - 26.09.2002; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2; S. 151 - 154. | |
| 469. | Gehring, A., Kosina, H., Selberherr, S.: Transmission Coefficient Estimation for High-k Gate Stack Evaluation Vortrag: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 25.09.2002 - 28.09.2002; in: "Advances in Simulation, Systems Theory, and Systems Engineering", WSEAS Press, (2002), ISBN: 960-8052-70-x; S. 156 - 159. | |
| 468. | Dragosits, K., Palankovski, V., Selberherr, S.: Two-Dimensional Modeling of Quantum Mechanical Effects in Ultra-Short CMOS Devices Vortrag: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 25.09.2002 - 28.09.2002; in: "Advances in Simulation, Systems Theory, and Systems Engineering", WSEAS Press, (2002), ISBN: 960-8052-70-x; S. 113 - 116. | |
| 467. | Nedjalkov, M., Kosik, R., Kosina, H., Selberherr, S.: Wigner Transport through Tunneling Structures - Scattering Interpretation of the Potential Operator Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 187 - 190. https://doi.org/10.1109/SISPAD.2002.1034548 | |
| 466. | Harlander, C., Sabelka, R., Selberherr, S.: A Comparative Study of Two Numerical Techniques for Inductance Calculation in Interconnect Structures Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 254 - 257. https://doi.org/10.1007/978-3-7091-6244-6_56 | |
| 465. | Kosina, H., Kosik, R., Nedjalkov, M.: A Hierarchy of Kinetic Equations for Quantum Device Simulation Vortrag: Conference on Applied Mathematics in our Changing World, Berlin (eingeladen); 02.09.2001 - 06.09.2001; in: "Proceedings First SIAM-EMS Conference on Applied Mathematics in our Changing World", (2001), S. 24. | |
| 464. | Palankovski, V., Belova, N., Grasser, T., Puchner, H., Aronowitz, S., Selberherr, S.: A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 428 - 431. https://doi.org/10.1007/978-3-7091-6244-6_99 | |
| 463. | Grasser, T., Kosina, H., Gritsch, M., Selberherr, S.: A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 19.03.2001 - 21.03.2001; in: "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4; S. 474 - 477. | |
| 462. | Binder, T., Heitzinger, C., Selberherr, S.: A Qualitative Study on Global and Local Optimization Techniques for TCAD Analysis Tasks Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 19.03.2001 - 21.03.2001; in: "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4; S. 466 - 469. | |
| 461. | Quay, R., Schultheis, R., Kellner, W., Palankovski, V., Selberherr, S.: A Review of Modeling Issues for RF Heterostructure Device Simulation Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 432 - 435. https://doi.org/10.1007/978-3-7091-6244-6_100 | |
| 460. | Gritsch, M., Kosina, H., Grasser, T., Selberherr, S.: A Simulation Study of Partially Depleted SOI MOSFETs Vortrag: Symposium on Silicon-on-Insulator Technology and Devices, Washington; 25.03.2001 - 29.03.2001; in: "Proceedings Symp. on Silicon-on-Insulator Technology and Devices", (2001), ISBN: 1-56677-309-1; S. 181 - 186. | |
| 459. | Nedjalkov, M., Kosina, H., Kosik, R., Selberherr, S.: A Space Dependent Wigner Equation Including Phonon Interaction Vortrag: International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA; 15.09.2001 - 18.09.2001; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2001), S. 4. | |
| 458. | Nedjalkov, M., Kosik, R., Kosina, H., Selberherr, S.: A Wigner Equation for the Nanometer and Femtosecond Transport Regime Vortrag: IEEE Conference on Nanotechnology (NANO), Maui; 28.10.2001 - 30.10.2001; in: "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2001), ISBN: 0-7803-7215-8; S. 277 - 281. https://doi.org/10.1109/NANO.2001.966433 | |
| 457. | Grasser, T., Kosina, H., Gritsch, M., Selberherr, S., Puchner, H., Aronowitz, S.: Accurate Simulation of Substrate Currents by Accounting for the Hot Electron Tail Population Vortrag: European Solid-State Device Research Conference (ESSDERC), Nürnberg; 11.09.2001 - 13.09.2001; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2001), ISBN: 2-914601-01-8; S. 215 - 218. | |
| 456. | Hössinger, A., Binder, T., Pyka, W., Selberherr, S.: Advanced Hybrid Cellular Based Approach for Three-Dimensional Etching and Deposition Simulation Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 424 - 427. https://doi.org/10.1007/978-3-7091-6244-6_98 | |
| 455. | Kosina, H., Nedjalkov, M., Selberherr, S.: An Event Bias Technique for Monte Carlo Device Simulation Vortrag: Seminar on Monte Carlo Methods (MCM), Salzburg; 10.09.2001 - 14.09.2001; in: "Program and Abstracts 3rd IMACS Seminar on Monte Carlo Methods", (2001), S. 141 - 143. | |
| 454. | Grasser, T., Kosina, H., Selberherr, S.: An Impact Ionization Model Including Non-Maxwellian and Non-Parabolicity Effects Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 46 - 49. https://doi.org/10.1007/978-3-7091-6244-6_10 | |
| 453. | Kosina, H., Gritsch, M., Grasser, T., Linton, T., Yu, S., Giles, M., Selberherr, S.: An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs Poster: International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA; 15.09.2001 - 18.09.2001; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2001), S. 67. | |
| 452. | Dragosits, K., Ponomarev, Y., Dachs, C., Selberherr, S.: Analysis of Ultra Short MOSFETs with High-K Gate Dielectrics Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 412 - 415. https://doi.org/10.1007/978-3-7091-6244-6_95 | |
| 451. | Wolf, A., Grasser, T., Selberherr, S.: Automatic Binding of SPICE Models to the Device/Circuit Simulator MINIMOS-NT Vortrag: European Simulation Multiconference (ESM), Prag; 06.06.2001 - 09.06.2001; in: "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3; S. 314 - 318. | |
| 450. | Nedjalkov, M., Grasser, T., Kosina, H., Selberherr, S.: Boundary Condition Models for Terminal Current Fluctuations Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 152 - 155. https://doi.org/10.1007/978-3-7091-6244-6_34 | |
| 449. | Klima, R., Grasser, T., Selberherr, S.: Controlling TCAD Applications with an Object-Oriented Dynamic Database Vortrag: European Simulation Multiconference (ESM), Prag; 06.06.2001 - 09.06.2001; in: "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3; S. 161 - 165. | |
| 448. | Selberherr, S.: Current Transport Models for Engineering Applications Vortrag: Advanced Research Workshop on Future Trends in Microelectronics, Ile de Bendor; 25.06.2001 - 29.06.2001; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: The Nano Millenium", (2001), ISBN: 0-471-21247-4; S. 54. | |
| 447. | Gehring, A., Grasser, T., Selberherr, S.: Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer Matrix Method Poster: International Semiconductor Device Research Symposium (ISDRS), Washington; 05.12.2001 - 07.12.2001; in: "2001 International Semiconductor Device Research Symposium", (2001), S. 260 - 263. | |
| 446. | Gurov, T.V., Nedjalkov, M., Whitlock, P.A., Kosina, H., Selberherr, S.: Femtosecond Relaxation of Hot Electrons by Phonon Emission in Presence of Electric Field Poster: International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS), Santa Fe; 27.08.2001 - 31.08.2001; in: "Proceedings 12th International Conference on Nonequilibrium Carrier Dynamics", (2001), S. 27. | |
| 445. | Cervenka, J., Knaipp, M., Hössinger, A., Selberherr, S.: Green's Function Approach for Three-Dimensional Diffusion Simulation of Industrial High Voltage Applications Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 408 - 411. https://doi.org/10.1007/978-3-7091-6244-6_94 | |
| 444. | Grasser, T., Kosina, H., Selberherr, S.: Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation Vortrag: International Conference on the Experience of Designing and Application of CAD Systems in Microelectronics, Lviv-Slavsko (eingeladen); 12.02.2001 - 17.02.2001; in: "The Experience of Designing and Application of CAD Systems in Microelectronics", (2001), ISBN: 966-553-079-8; S. 19 - 30. | |
| 443. | Grasser, T., Kosina, H., Selberherr, S.: Investigation of Spurious Velocity Overshoot Using Monte Carlo Data Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 54 - 57. https://doi.org/10.1007/978-3-7091-6244-6_12 | |
| 442. | Grasser, T., Selberherr, S.: Limitations of Hydrodynamic and Energy-Transport Models Vortrag: International Workshop on Processes of Semiconductor Devices, Delhi (eingeladen); 11.12.2001 - 15.12.2001; in: "Physics of Semiconductor Devices", V. Kumar, P.K. Basu (Hrg.); Allied Publishers Limited, (2001), ISBN: 81-7764-223-5; S. 584 - 591. | |
| 441. | Pyka, W., Heitzinger, C., Tamaoki, N., Takase, T., Ohmine, T., Selberherr, S.: Monitoring Arsenic In-Situ Doping with Advanced Models for Poly-Silicon CVD Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 124 - 127. https://doi.org/10.1007/978-3-7091-6244-6_27 | |
| 440. | Nedjalkov, M., Kosina, H., Selberherr, S.: Monte Carlo Algorithms for Stationary Device Simulation Vortrag: Seminar on Monte Carlo Methods (MCM), Salzburg; 10.09.2001 - 14.09.2001; in: "Program and Abstracts 3rd IMACS Seminar on Monte Carlo Methods", (2001), S. 58 - 59. | |
| 439. | Kosina, H., Nedjalkov, M., Selberherr, S.: Monte Carlo Analysis of the Small-Signal Response of Charge Carriers Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 06.06.2001 - 10.06.2001; in: "Abstracts of the 3rd International Conference on Large-Scale Scientific Computations", (2001), S. A-23. | |
| 438. | Park, J.M., Grasser, T., Kosina, H., Selberherr, S.: Numerical Study of Partial-SOI LDMOSFET Power Devices Poster: International Semiconductor Device Research Symposium (ISDRS), Washington; 05.12.2001 - 07.12.2001; in: "2001 International Semiconductor Device Research Symposium", (2001), S. 114 - 117. | |
| 437. | Heitzinger, C., Selberherr, S.: Optimization for TCAD Purposes Using Bernstein Polynomials Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 420 - 423. https://doi.org/10.1007/978-3-7091-6244-6_97 | |
| 436. | Palankovski, V., Röhrer, G., Wachmann, E., Kraft, J., Löffler, B., Cervenka, J., Quay, R., Grasser, T., Selberherr, S.: Optimization of High-Speed SiGe HBTs Vortrag: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Wien; 15.11.2001 - 16.11.2001; in: "Proceedings Intl. Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2001), ISBN: 0-7803-7049-x; S. 187 - 191. https://doi.org/10.1109/EDMO.2001.974305 | |
| 435. | Cervenka, J., Fleischmann, P., Selberherr, S., Knaipp, M., Unterleitner, F.: Optimization of Industrial High Voltage Structures by Three-Dimensional Diffusion Simulation Vortrag: European Solid-State Device Research Conference (ESSDERC), Nürnberg; 11.09.2001 - 13.09.2001; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2001), ISBN: 2-914601-01-8; S. 227 - 230. | |
| 434. | Heitzinger, C., Binder, T., Selberherr, S.: Parallel TCAD Optimization and Parameter Extraction for Computationally Expensive Objective Functions Vortrag: European Simulation Multiconference (ESM), Prag; 06.06.2001 - 09.06.2001; in: "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3; S. 534 - 538. | |
| 433. | Palankovski, V., Belova, N., Grasser, T., Puchner, H., Aronowitz, S., Selberherr, S.: Reliable Prediction of Deep Sub-Quartermicron CMOS Technology Performance Vortrag: IEEE Conference on Nanotechnology (NANO), Maui; 28.10.2001 - 30.10.2001; in: "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2001), ISBN: 0-7803-7215-8; S. 201 - 206. https://doi.org/10.1109/NANO.2001.966419 | |
| 432. | Gritsch, M., Kosina, H., Grasser, T., Selberherr, S.: Simulation of Partially Depleted SOI MOSFETs using an Improved Hydrodynamic Transport Model Vortrag: International Workshop on Processes of Semiconductor Devices, Delhi; 11.12.2001 - 15.12.2001; in: "Physics of Semiconductor Devices", V. Kumar, P.K. Basu (Hrg.); Allied Publishers Limited, (2001), ISBN: 81-7764-223-5; S. 664 - 667. | |
| 431. | Grasser, T.: Simulation of Semiconductor Devices and Circuits at High Frequencies Vortrag: GMe Forum 2001, Wien (eingeladen); 05.04.2001 - 06.04.2001; in: "Proceedings of the GMe Forum", (2001), S. 91 - 96. | |
| 430. | Gehring, A., Heitzinger, C., Grasser, T., Selberherr, S.: TCAD Analysis of Gain Cell Retention Time for SRAM Applications Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 416 - 419. https://doi.org/10.1007/978-3-7091-6244-6_96 | |
| 429. | Grasser, T., Selberherr, S.: Technology CAD: Device Simulation and Characterization Vortrag: Ultra Shallow Junctions Conference, Napa (eingeladen); 22.04.2001 - 26.04.2001; in: "Sixth International Workshop on the Fabrication, Characterization, and Modeling of Ultra Shallow Doping Profiles in Semiconductors", (2001), S. 4 - 11. | |
| 428. | Harlander, C., Sabelka, R., Selberherr, S.: Three-Dimensional Electro-Thermal Simulation of Interconnect Structures with Temperature-Dependent Permittivity Vortrag: International Intersociety, Electronic Packaging Technical Conference (InterPACK), Kauai; 08.07.2001 - 13.07.2001; in: "The Pacific RIM/International Intersociety, Electronic Packaging Technical/Business Conference & Exhibition", (2001), S. 1 - 2. | |
| 427. | Kosina, H., Nedjalkov, M., Selberherr, S.: Variance Reduction in Monte Carlo Device Simulation by Means of Event Biasing Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 19.03.2001 - 21.03.2001; in: "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4; S. 11 - 14. | |
| 426. | Kosina, H., Nedjalkov, M., Selberherr, S.: Variance and Covariance Estimation in Stationary Monte Carlo Device Simulation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 140 - 143. https://doi.org/10.1007/978-3-7091-6244-6_31 | |
| 425. | Nedjalkov, M., Kosina, H., Selberherr, S., Dimov, I.: A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors Poster: International Workshop on Computational Electronics (IWCE), Glasgow, UK; 22.05.2000 - 25.05.2000; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2000), ISBN: 0-85261-704-6; S. 144 - 145. https://doi.org/10.1109/IWCE.2000.869966 | |
| 424. | Grasser, T., Quay, R., Palankovski, V., Selberherr, S.: A Global Self-Heating Model for Device Simulation Vortrag: European Solid-State Device Research Conference (ESSDERC), Cork; 11.09.2000 - 13.09.2000; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6; S. 324 - 327. https://doi.org/10.1109/ESSDERC.2000.194780 | |
| 423. | Troger, C., Kosina, H., Selberherr, S.: A Stable Schrödinger-Poisson Solver to Investigate Quantum Effects in Modern MOSFETs Vortrag: Workshop on Ultimate Integration of Silicon (ULIS), Grenoble; 20.01.2000 - 21.01.2000; in: "European Workshop on Ultimate Integration of Silicon", (2000), S. 123 - 126. | |
| 422. | Palankovski, V., Selberherr, S., Quay, R., Schultheis, R.: Analysis of HBT Behavior After Strong Electrothermal Stress Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; 06.09.2000 - 08.09.2000; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9; S. 245 - 248. https://doi.org/10.1109/SISPAD.2000.871254 | |
| 421. | Stockinger, M., Selberherr, S.: Automatic Device Design Optimization with TCAD Frameworks Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Diego (eingeladen); 26.03.2000 - 29.03.2000; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (2000), ISBN: 0-9666135-7-0; S. 1 - 6. | |
| 420. | Klima, R., Grasser, T., Binder, T., Selberherr, S.: Controlling TCAD Applications with a Dynamic Database Vortrag: International Conference on Software Engineering and Applications (SEA), Las Vegas; 06.11.2000 - 09.11.2000; in: "Proceedings of the IASTED Intl. Conf. on Software Engineering and Applications", (2000), ISBN: 0-88986-306-7; S. 103 - 112. | |
| 419. | Palankovski, V., Schultheis, R., Bonacina, A., Selberherr, S.: Effectiveness of Silicon Nitride Passivation in III-V Based HBTs Poster: International Conference on Defects in Insulating Materials, Johannesburg; 03.04.2000 - 07.04.2000; in: "Abstracts Intl. Conf. on Defects in Insulating Materials", (2000), S. 188. | |
| 418. | Grasser, T., Selberherr, S.: Electro-Thermal Effects in Mixed-Mode Device Simulation Vortrag: International Semiconductor Conference (CAS), Sinaia (eingeladen); 10.10.2000 - 14.10.2000; in: "Proceedings CAS 2000 Conference", (2000), ISBN: 0-7803-5885-6; S. 43 - 52. | |
| 417. | Palankovski, V., Selberherr, S.: III-V Semiconductor Materials in MINIMOS-NT Poster: Materials Research Society Spring Meeting (MRS), San Francisco; 24.04.2000 - 28.04.2000; in: "Abstracts MRS Spring Meeting", (2000), S. 249. | |
| 416. | Pyka, W., Selberherr, S., Sukharev, V.: Incorporation of Equipment Simulation into Integrated Feature Scale Profile Evolution Vortrag: European Solid-State Device Research Conference (ESSDERC), Cork; 11.09.2000 - 13.09.2000; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6; S. 180 - 183. | |
| 415. | Harlander, C., Sabelka, R., Selberherr, S.: Inductance Calculation in Interconnect Structures Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Diego; 26.03.2000 - 29.03.2000; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (2000), ISBN: 0-9666135-7-0; S. 416 - 419. | |
| 414. | Palankovski, V., Quay, R., Selberherr, S.: Industrial Application of Heterostructure Device Simulation Vortrag: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Seattle (eingeladen); 05.11.2000 - 08.11.2000; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2000), ISBN: 0-7803-5968-2; S. 117 - 120. https://doi.org/10.1109/GAAS.2000.906305 | |
| 413. | Gritsch, M., Kosina, H., Fischer, C., Selberherr, S.: Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada; 25.10.2000 - 27.10.2000; in: "Proceedings EUROSOI 2000", (2000), S. 1 - 4. | |
| 412. | Palankovski, V., Schultheis, R., Bonacina, A., Selberherr, S.: Investigations on the Impact of the InGaP Ledge on HBT-Performance Vortrag: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Aegean See; 29.05.2000 - 02.06.2000; in: "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (2000), ISBN: 0-9703111-0-9; S. 5 - 6. | |
| 411. | Grasser, T., Selberherr, S.: Mixed-Mode Device Simulation Vortrag: International Conference on Microelectronics (MIEL), Nis (eingeladen); 14.05.2000 - 17.05.2000; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2000), ISBN: 0-7803-5235-1; S. 35 - 42. https://doi.org/10.1109/ICMEL.2000.840528 | |
| 410. | Binder, T., Selberherr, S.: Object-Oriented Design Patterns for Process Flow Simulations Vortrag: International Conference on Software Engineering and Applications (SEA), Las Vegas; 06.11.2000 - 09.11.2000; in: "Proceedings of the IASTED Intl. Conf. on Software Engineering and Applications", (2000), ISBN: 0-88986-306-7; S. 159 - 166. | |
| 409. | Binder, T., Selberherr, S.: Object-Oriented Wafer-State Services Vortrag: European Simulation Multiconference (ESM), Ghent; 23.05.2000 - 26.05.2000; in: "Proceedings European Simulation Multiconference ESM 2000", (2000), ISBN: 1-56555-204-0; S. 360 - 364. | |
| 408. | Hössinger, A., Langer, E.: "Parallel Monte Carlo Simulation of Ion Implantation"; Vortrag: International Conference on Ion Implantation Technology, Cork (eingeladen); 17.09.2000 - 22.09.2000; in: "Proceedings 13th Intl. Conf. on Ion Implantation Technology", (2000), S. 203 - 208. | |
| 407. | Sabelka, R., Harlander, C., Selberherr, S.: Propagation of RF Signals in Microelectronic Structures Vortrag: International Workshop on Challenges in Predictive Process Simulation (ChiPPS), Wandlitz (eingeladen); 14.05.2000 - 18.05.2000; in: "Abstracts Challenges in Predictive Process Simulation Meeting", (2000), S. 50 - 51. | |
| 406. | Dragosits, K., Selberherr, S.: Simulation of Ferroelectric Materials with MINIMOS-NT Poster: Materials Research Society Spring Meeting (MRS), San Francisco; 24.04.2000 - 28.04.2000; in: "Abstracts MRS Spring Meeting", (2000), S. 249. | |
| 405. | Dragosits, K., Selberherr, S.: Simulation of Ferroelectric Nonvolatile Memory Cells with MINIMOS-NT Vortrag: International Conference on Micro Materials, Berlin; 17.05.2000 - 19.05.2000; in: "Abstracts Intl. Conf. on Micro Materials", (2000), ISBN: 3-932434-14-5; S. 81 - 82. | |
| 404. | Dragosits, K., Selberherr, S.: Simulation of Ferroelectric Nonvolatile Memory Cells with MINIMOS-NT Vortrag: International Conference on Micro Materials, Berlin; 17.05.2000 - 19.05.2000; in: "Proceedings of the 3rd Intl. Micro Materials Conference", DDP Goldenbogen, (2000), ISBN: 3-932434-15-3; S. 1023 - 1026. | |
| 403. | Dragosits, K., Selberherr, S.: Simulation of Ferroelectric Thin Films Poster: International Conference on Defects in Insulating Materials, Johannesburg; 03.04.2000 - 07.04.2000; in: "Abstracts Intl. Conf. on Defects in Insulating Materials", (2000), S. 179. | |
| 402. | Quay, R., Massler, H., Kellner, W., Grasser, T., Palankovski, V., Selberherr, S.: Simulation of Gallium-Arsenide Based High Electron Mobility Transistors Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; 06.09.2000 - 08.09.2000; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9; S. 74 - 77. https://doi.org/10.1109/SISPAD.2000.871210 | |
| 401. | Quay, R., Palankovski, V., Chertouk, M., Leuther, A., Selberherr, S.: Simulation of InAlAs/InGaAs High Electron Mobility Transistors with a Single Set of Physical Parameters Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 10.12.2000 - 13.12.2000; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2000), ISBN: 0-7803-6438-4; S. 186 - 189. https://doi.org/10.1109/IEDM.2000.904289 | |
| 400. | Palankovski, V., Grasser, T., Knaipp, M., Selberherr, S.: Simulation of Polysilicon Emitter Bipolar Transistors Poster: European Solid-State Device Research Conference (ESSDERC), Cork; 11.09.2000 - 13.09.2000; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6; S. 608 - 611. https://doi.org/10.1109/ESSDERC.2000.194851 | |
| 399. | Palankovski, V., Selberherr, S.: State-of-the-art Micro Materials Models in MINIMOS-NT Vortrag: International Conference on Micro Materials, Berlin; 17.05.2000 - 19.05.2000; in: "Abstracts Intl. Conf. on Micro Materials", (2000), ISBN: 3-932434-14-5; S. 290 - 291. | |
| 398. | Palankovski, V., Selberherr, S.: State-of-the-art Micro Materials Models in MINIMOS-NT Vortrag: International Conference on Micro Materials, Berlin; 17.05.2000 - 19.05.2000; in: "Proceedings of the 3rd Intl. Micro Materials Conference", DDP Goldenbogen, Dresden (2000), ISBN: 3-932434-15-3; S. 714 - 717. | |
| 397. | Sabelka, R., Harlander, C., Selberherr, S.: The State of the Art in Interconnect Simulation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA (eingeladen); 06.09.2000 - 08.09.2000; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9; S. 6 - 11. https://doi.org/10.1109/SISPAD.2000.871194 | |
| 396. | Dragosits, K., Hagenbeck, R., Selberherr, S.: Transient Simulation of Ferroelectric Hysteresis Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Diego; 26.03.2000 - 29.03.2000; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (2000), ISBN: 0-9666135-7-0; S. 433 - 436. | |
| 395. | Dragosits, K., Kosik, R., Selberherr, S.: Two-Dimensional Simulation of Ferroelectric Materials Vortrag: International Symposium on Integrated Ferroelectrics (ISIF), Aachen; 12.03.2000 - 15.03.2000; in: "Abstracts Intl. Symposium on Integrated Ferroelectrics", (2000), S. 128. | |
| 394. | Pyka, W., Sukharev, V., Kumar, K., Joh, S., McInerney, J.E.: "A 3D Integrated Simulation of Across-Wafer Metal Stack Gap-Fill for Local Interconnect Applications"; Poster: International VLSI Multilevel Interconnection Conference (VMIC), Santa Clara; 07.09.1999 - 09.09.1999; in: "Proceedings of the 16th Intl. VLSI Multilevel Interconnection Conf.", (1999), S. 477 - 479. | |
| 393. | Burenkov, A., Tietzel, K., Hössinger, A., Lorenz, J., Ryssel, H., Selberherr, S.: A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 55 - 58. https://doi.org/10.1109/SISPAD.1999.799258 | |
| 392. | Palankovski, V., Gonzalez, B., Kosina, H., Hernandez, A., Selberherr, S.: A New Analytical Energy Relaxation Time Model for Device Simulation Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 19.04.1999 - 21.04.1999; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6; S. 395 - 398. | |
| 391. | Binder, T., Selberherr, S.: A Parallel Finite Oct-Tree for Multi-Threaded Insert, Delete, and Search Operations Vortrag: International Conference on Applied Modelling and Simulation, Cairns; 01.09.1999 - 03.09.1999; in: "Proceedings Intl. Conf. on Applied Modelling and Simulation", (1999), ISBN: 0-88986-259-1; S. 613 - 616. | |
| 390. | Palankovski, V., Strasser, R., Kosina, H., Selberherr, S.: A Systematic Approach for Model Extraction for Device Simulation Application Vortrag: International Conference on Applied Modelling and Simulation, Cairns; 01.09.1999 - 03.09.1999; in: "Proceedings Intl. Conf. on Applied Modelling and Simulation", (1999), ISBN: 0-88986-259-1; S. 463 - 466. | |
| 389. | Quay, R., Moglestue, C., Palankovski, V., Selberherr, S.: A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials Vortrag: Materials Research Society Spring Meeting (MRS), Strasbourg; 01.06.1999 - 04.06.1999; in: "Abstracts E-MRS Spring Meeting", (1999), S. L-7. | |
| 388. | Radi, M., Selberherr, S.: AMIGOS - A Rapid Prototyping System Vortrag: International Conference on Applied Informatics, Innsbruck; 15.02.1999 - 18.02.1999; in: "Proceedings IASTED Intl. Conf. on Applied Informatics", (1999), ISBN: 0-88986-241-9; S. 372 - 374. | |
| 387. | Hössinger, A., Selberherr, S.: Accurate Three-Dimensional Simulation of Damage Caused by Ion Implantation Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 19.04.1999 - 21.04.1999; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6; S. 363 - 366. | |
| 386. | Selberherr, S.: Aktuelle Entwicklungen der Mikroelektronik Vortrag: Informationstagung Mikroelektronik (ME), Wien (eingeladen); 29.09.1999 - 30.09.1999; in: "Proceedings Mikroelektronik, Elektrotechnik und Informationstechnik 1999", 116 (1999), S. 485 - 490. https://doi.org/10.1007/BF03158944 | |
| 385. | Gonzalez, B., Palankovski, V., Kosina, H., Hernandez, A., Selberherr, S.: An Analytical Model for the Electron Energy Relaxation Time Vortrag: Conference De Dispositivos Electronicos, Madrid; 10.06.1999 - 11.06.1999; in: "Proceedings Conf. De Dispositivos Electronicos", (1999), ISBN: 84-00-07819-5; S. 263 - 266. | |
| 384. | Gonzalez, B., Palankovski, V., Kosina, H., Hernandez, A., Selberherr, S.: An Energy Relaxation Time Model for Device Simulation Vortrag: International Conference on Modelling and Simulation, Philadelphia; 05.05.1999 - 08.05.1999; in: "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1999), ISBN: 0-88986-247-8; S. 367 - 370. | |
| 383. | Stockinger, M., Selberherr, S.: Closed-Loop CMOS Gate Delay Time Optimization Vortrag: European Solid-State Device Research Conference (ESSDERC), Leuven; 13.09.1999 - 15.09.1999; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1999), ISBN: 2-86332-245-1; S. 504 - 507. | |
| 382. | Stockinger, M., Strasser, R., Plasun, R., Wild, A., Selberherr, S.: Closed-Loop MOSFET Doping Profile Optimization for Portable Systems Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 19.04.1999 - 21.04.1999; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6; S. 411 - 413. | |
| 381. | Haindl, B., Kosik, R., Fleischmann, P., Selberherr, S.: Comparison of Finite Element and Finite Box Discretization for Three-Dimensional Diffusion Modeling Using AMIGOS Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 131 - 134. https://doi.org/10.1109/SISPAD.1999.799278 | |
| 380. | Grasser, T., Kosina, H., Selberherr, S.: Consistent Comparison of Drift-Diffusion and Hydro-Dynamic Device Simulations Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 151 - 154. https://doi.org/10.1109/SISPAD.1999.799283 | |
| 379. | Quay, R., Palankovski, V., Reuter, R., Schlechtweg, M., Kellner, W., Selberherr, S.: III/V Device Optimization by Physics Based S-Parameter Simulation Vortrag: International Symposium on Compound Semiconductors (ISCS), Berlin; 22.08.1999 - 26.08.1999; in: "Proceedings Intl. Symposium on Compound Semiconductors", (1999), ISBN: 0-7503-0704-8; S. 325 - 328. | |
| 378. | Strasser, R., Plasun, R., Stockinger, M., Selberherr, S.: Inverse Modeling of Semiconductor Devices Vortrag: Conference on Optimization, Atlanta; 10.05.1999 - 12.05.1999; in: "Abstracts SIAM Conf. on Optimization", (1999), S. 77. | |
| 377. | Fleischmann, P., Haindl, B., Kosik, R., Selberherr, S.: Investigation of a Mesh Criterion for Three-Dimensional Finite Element Diffusion Simulation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 71 - 74. https://doi.org/10.1109/SISPAD.1999.799262 | |
| 376. | Pyka, W., Fleischmann, P., Haindl, B., Selberherr, S.: Linking Three-Dimensional Topography Simulation with High Pressure CVD Reaction Kinetics Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 199 - 202. https://doi.org/10.1109/SISPAD.1999.799295 | |
| 375. | Nedjalkov, M., Kosina, H., Selberherr, S.: Monte-Carlo Method for Direct Computation of the Small Signal Kinetic Coefficients Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 155 - 158. https://doi.org/10.1109/SISPAD.1999.799284 | |
| 374. | Dragosits, K., Selberherr, S.: Numerical Aspects of the Simulation of Two-Dimensional Ferroelectric Hysteresis Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 19.04.1999 - 21.04.1999; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6; S. 309 - 312. | |
| 373. | Hössinger, A., Radi, M., Scholz, B., Fahringer, T., Langer, E., Selberherr, S.: Parallelization of a Monte-Carlo Ion Implantation Simulator for Three-Dimensional Crystalline Structures Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 103 - 106. https://doi.org/10.1109/SISPAD.1999.799271 | |
| 372. | Hössinger, A., Langer, E., Selberherr, S.: Performance Optimization of a Parallelized Three-Dimensional Monte-Carlo Ion Implantation Simulator Vortrag: European Simulation Symposium (ESS), Erlangen; 26.10.1999 - 28.10.1999; in: "Proceedings European Simulation Symposium", (1999), ISBN: 1-56555-177-x; S. 649 - 651. | |
| 371. | Strasser, R., Plasun, R., Selberherr, S.: Practical Inverse Modeling with SIESTA Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 91 - 94. https://doi.org/10.1109/SISPAD.1999.799268 | |
| 370. | Palankovski, V., Quay, R., Selberherr, S., Schultheis, R.: S-Parameter Simulation of HBTs on Gallium-Arsenide Vortrag: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), London; 22.11.1999 - 23.11.1999; in: "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO", (1999), ISBN: 0-7803-5298-x; S. 15 - 19. https://doi.org/10.1109/EDMO.1999.821087 | |
| 369. | Fleischmann, P., Kosik, R., Haindl, B., Selberherr, S.: Simple Mesh Examples to Illustrate Specific Finite Element Mesh Requirements Vortrag: International Meshing Roundtable, South Lake Tahoe; 10.10.1999 - 13.10.1999; in: "Proceedings 8th Intl. Meshing Roundtable", (1999), S. 241 - 246. | |
| 368. | Palankovski, V., Selberherr, S., Schultheis, R.: Simulation of Heterojunction Bipolar Transistors on Gallium-Arsenide Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 227 - 230. https://doi.org/10.1109/SISPAD.1999.799302 | |
| 367. | Kosina, H.: "The Monte Carlo Method for Semi-classical Charge Transport in Semiconductor Devices"; Vortrag: Seminar on Monte Carlo Methods (MCM), Varna; 07.06.1999 - 11.06.1999; in: "Abstracts IMACS Seminar on Monte Carlo Methods", (1999), S. 26 - 27. | |
| 366. | Palankovski, V., Selberherr, S.: Thermal Models for Semiconductor Device Simulation Vortrag: Conference on High Temperature Electronics (HITEN), Berlin; 04.07.1999 - 07.07.1999; in: "Proceedings European Conf. on High Temperature Electronics HITEN", (1999), ISBN: 0-7803-5795-7; S. 25 - 28. https://doi.org/10.1109/HITEN.1999.827343 | |
| 365. | Quay, R., Reuter, R., Grasser, T., Selberherr, S.: Thermal Simulations of III/V HEMTs Vortrag: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), London; 22.11.1999 - 23.11.1999; in: "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications", (1999), ISBN: 0-7803-5298-x; S. 87 - 92. | |
| 364. | Hössinger, A., Selberherr, S., Kimura, M., Nomachi, I., Kusanagi, S.: Three-Dimensional Monte-Carlo Ion Implantation Simulation for Molecular Ions Vortrag: Symposium on Process Physics and Modeling in Semiconductor Technology, Seattle; 05.05.1999 - 06.05.1999; in: "Proceedings Symp. on Process Physics and Modeling in Semiconductor Technology", Electrochemical Society, 99-2 (1999), ISBN: 1-56677-224-9; S. 18 - 25. | |
| 363. | Pyka, W., Kirchauer, H., Selberherr, S.: Three-Dimensional Resist Development Simulation - Benchmarks and Integration with Lithography Vortrag: Micro- and Nano-Engineering Conference, Rom; 21.09.1999 - 23.09.1999; in: "Abstracts Micro-and-Nano-Engineering 99 Conf.", (1999), S. 305 - 306. | |
| 362. | Harlander, C., Sabelka, R., Minixhofer, R., Selberherr, S.: Three-Dimensional Transient Electro-Thermal Simulation Vortrag: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Rome; 03.10.1999 - 06.10.1999; in: "Proceedings THERMINIC Workshop", (1999), S. 169 - 172. | |
| 361. | Nedjalkov, M., Kosina, H.: "Variance of the Ensemble Monte Carlo Algorithm for Semiconductor Transport Modeling"; Vortrag: Seminar on Monte Carlo Methods (MCM), Varna; 07.06.1999 - 11.06.1999; in: "Abstracts IMACS Seminar on Monte Carlo Methods", (1999), S. 43. | |
| 360. | Martins, R., Selberherr, S., Vaz, F.: A CMOS IC for Portable EEG Acquisition Systems Vortrag: Instrumentation and Measurement Technology Conference, St. Paul; 18.05.1998 - 21.05.1998; in: "Proceedings Instrumentation and Measurement Technology Conf.", (1998), ISBN: 0-7803-4797-8; S. 1406 - 1410. | |
| 359. | Palankovski, V., Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.: A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 105 - 108. https://doi.org/10.1007/978-3-7091-6827-1_29 | |
| 358. | Kaiblinger-Grujin, G., Grasser, T., Selberherr, S.: A Physically-Based Electron Mobility Model for Silicon Device Simulation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 312 - 315. https://doi.org/10.1007/978-3-7091-6827-1_78 | |
| 357. | Stockinger, M., Strasser, R., Plasun, R., Wild, A., Selberherr, S.: A Qualitative Study on Optimized MOSFET Doping Profiles Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 77 - 80. https://doi.org/10.1007/978-3-7091-6827-1_22 | |
| 356. | Kirchauer, H., Selberherr, S.: A Three-Dimensional Photolithography Simulator Including Rigorous Nonplanar Exposure Simulation for Off-Axis Illumination Poster: SPIE Optical Microlithography, Santa Clara, CA, USA; 22.02.1998 - 27.02.1998; in: "Proceedings of SPIE Optical Microlithography", (1998), S. 3334·86. | |
| 355. | Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.: A Universal Low-Field Electron Mobility Model for Semiconductor Device Simulation Poster: International Conference on Modeling and Simulation of Microsystems (MSM), Santa Clara; 06.05.1998 - 08.05.1998; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1998), ISBN: 0-9666135-0-3; S. M2.4.1. | |
| 354. | Sabelka, R., Martins, R., Selberherr, S.: Accurate Layout-Based Interconnect Analysis Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (1998), ISBN: 3-211-83208-4; S. 336 - 339. https://doi.org/10.1007/978-3-7091-6827-1_84 | |
| 353. | Langer, E., Selberherr, S.: Advanced Models, Applications, and Software Systems for High Performance Computing - Applications in Microelectronics Vortrag: Tagung des Forschungsverbund für technisch-wissenschaftliches Hochleistungsrechnen (FORTWIHR), München (eingeladen); 16.03.1998 - 18.03.1998; in: "Abstracts Intl. FORTHWIHR Conf.", (1998), S. 1. | |
| 352. | Rottinger, M., Seifert, N., Selberherr, S.: Analysis of AVC Measurements Vortrag: European Solid-State Device Research Conference (ESSDERC), Bordeaux; 07.09.1998 - 09.09.1998; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1998), ISBN: 2-86332-234-6; S. 344 - 347. | |
| 351. | Grasser, T., Strasser, R., Knaipp, M., Tsuneno, K., Masuda, H., Selberherr, S.: Calibration of a Mobility Model for Quartermicron CMOS Devices Poster: European Simulation Multiconference (ESM), Manchester; 16.06.1998 - 19.06.1998; in: "Proceedings European Simulation Multiconference", (1998), ISBN: 1-56555-148-6; S. 75 - 77. | |
| 350. | Grasser, T., Strasser, R., Knaipp, M., Tsuneno, K., Masuda, H., Selberherr, S.: Device Simulator Calibration for Quartermicron CMOS Devices Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 93 - 96. https://doi.org/10.1007/978-3-7091-6827-1_26 | |
| 349. | Pyka, W., Martins, R., Selberherr, S.: Efficient Algorithms for Three-Dimensional Etching and Deposition Simulation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 16 - 19. https://doi.org/10.1007/978-3-7091-6827-1_5 | |
| 348. | Grasser, T., Palankovski, V., Schrom, G., Selberherr, S.: Hydrodynamic Mixed-Mode Simulation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 247 - 250. https://doi.org/10.1007/978-3-7091-6827-1_62 | |
| 347. | Palankovski, V., Kaiblinger-Grujin, G., Selberherr, S.: Implications of Dopant-Dependent Low-Field Mobility and Band Gap Narrowing on the Bipolar Device Performance Vortrag: European Workshop on Low Temperature Electronics (WOLTE), San Miniato; 24.06.1998 - 26.06.1998; in: "Proceedings European Workshop on Low Temperature Electronics 3", L. Brogiato, D.V. Camin, G. Pessina (Hrg.); Journal de Physique IV, 8 (1998), S. 91 - 94. https://doi.org/10.1051/jp4:1998321 | |
| 346. | Palankovski, V., Knaipp, M., Selberherr, S.: Influence of the Material Composition and Doping Profiles on HBTs Device Performance Vortrag: International Conference on Modelling and Simulation, Pittsburgh; 13.05.1998 - 16.05.1998; in: "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1998), ISBN: 0-88986-252-4; S. 7 - 10. | |
| 345. | Grasser, T., Selberherr, S., Tsueno, K., Masuda, H.: Mobility Parameter Tuning for Device Simulation Vortrag: European Solid-State Device Research Conference (ESSDERC), Bordeaux; 07.09.1998 - 09.09.1998; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1998), ISBN: 2-86332-234-6; S. 336 - 339. | |
| 344. | Martins, R., Pyka, W., Sabelka, R., Selberherr, S.: Modeling Integrated Circuit Interconnections Vortrag: International Conference on Microelectronics and Packaging, Curitiba; 10.08.1998 - 14.08.1998; in: "Proceedings XIII SBMicro, Intl. Conf. on Microelectronics and Packaging", (1998), S. 144 - 151. | |
| 343. | Mlekus, R., Selberherr, S.: Object-Oriented Algorithm and Model Management Vortrag: International Conference on Applied Modelling and Simulation, Honolulu; 12.08.1998 - 14.08.1998; in: "Proceedings IASTED Intl. Conf. on Applied Modelling and Simulation", (1998), ISBN: 0-88986-270-2; S. 437 - 441. | |
| 342. | Fleischmann, P., Leitner, E., Selberherr, S.: Optimized Geometry Preprocessing for Three-Dimensional Semiconductor Process Simulation Vortrag: International Conference on Applied Modelling and Simulation, Honolulu; 12.08.1998 - 14.08.1998; in: "Proceedings IASTED Intl. Conf. on Applied Modelling and Simulation", (1998), ISBN: 0-88986-270-2; S. 317 - 321. | |
| 341. | Strasser, R., Plasun, R., Selberherr, S.: Parallel and Distributed Optimization in Technology Computer Aided Design Poster: European Simulation Multiconference (ESM), Manchester; 16.06.1998 - 19.06.1998; in: "Proceedings European Simulation Multiconference", (1998), ISBN: 1-56555-148-6; S. 78 - 80. | |
| 340. | Strasser, R., Selberherr, S.: Parallel and Distributed TCAD Simulations Using Dynamic Load Balancing Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 89 - 92. https://doi.org/10.1007/978-3-7091-6827-1_25 | |
| 339. | Martins, R., Sabelka, R., Pyka, W., Selberherr, S.: Rigorous Capacitance Simulation of DRAM Cells Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 69 - 72. https://doi.org/10.1007/978-3-7091-6827-1_20 | |
| 338. | Quay, R., Reuter, R., Palankovski, V., Selberherr, S.: S-Parameter Simulation of RF-HEMTs Vortrag: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester; 24.11.1998; in: "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO 98", (1998), ISBN: 0-7803-4333-6; S. 13 - 18. | |
| 337. | Sabelka, R., Selberherr, S.: SAP - A Program Package for Three-Dimensional Interconnect Simulation Poster: IEEE International Interconnect Technology Conference (IITC), San Francisco; 01.06.1998 - 03.06.1998; in: "Proceedings Intl. Interconnect Technology Conf.", (1998), ISBN: 0-7803-4286-0; S. 250 - 252. | |
| 336. | Palankovski, V., Grasser, T., Selberherr, S.: SiGe HBT in Mixed-Mode Device and Circuit Simulation Vortrag: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Zeuthen; 24.05.1998 - 27.05.1998; in: "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (1998), S. 145 - 156. | |
| 335. | Plasun, R., Stockinger, M., Strasser, R., Selberherr, S.: Simulation Based Optimization Environment and it's Application to Semiconductor Devices Vortrag: International Conference on Applied Modelling and Simulation, Honolulu; 12.08.1998 - 14.08.1998; in: "Proceedings IASTED Intl. Conf. on Applied Modelling and Simulation", (1998), ISBN: 0-88986-270-2; S. 313 - 316. | |
| 334. | Rottinger, M., Seifert, N., Selberherr, S.: Simulation of AVC Measurements Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 284 - 287. https://doi.org/10.1007/978-3-7091-6827-1_72 | |
| 333. | Wasshuber, C., Kosina, H., Selberherr, S.: Single-Electron Memories with Terabit Capacity Poster: Advanced Research Workshop on Future Trends in Microelectronics, Ile des Embiez (eingeladen); 31.05.1998 - 05.06.1998; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Off the Beaten Path", (1998), S. P-Th-17. | |
| 332. | Palankovski, V., Kaiblinger-Grujin, G., Selberherr, S.: Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices Poster: International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technology, Cardiff; 21.06.1998 - 24.06.1998; in: "Abstracts Intl. Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technology", PSA, (1998), S. 15. | |
| 331. | Radi, M., Selberherr, S.: Three-Dimensional Adaptive Mesh Relaxation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 193 - 196. https://doi.org/10.1007/978-3-7091-6827-1_49 | |
| 330. | Pyka, W., Selberherr, S.: Three-Dimensional Simulation of Bulge Formation in Contact Hole Metalization Poster: International Conference on Modeling and Simulation of Microsystems (MSM), Santa Clara; 06.05.1998 - 08.05.1998; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1998), ISBN: 0-9666135-0-3; S. T4.3.3. | |
| 329. | Pyka, W., Selberherr, S.: Three-Dimensional Simulation of TiN Magnetron Sputter Deposition Vortrag: European Solid-State Device Research Conference (ESSDERC), Bordeaux; 07.09.1998 - 09.09.1998; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1998), ISBN: 2-86332-234-6; S. 324 - 327. | |
| 328. | Dragosits, K., Knaipp, M., Selberherr, S.: Two-Dimensional Simulation of Ferroelectric Memory Cells Vortrag: International Conference on Electronic Materials, Cheju; 24.08.1998 - 27.08.1998; in: "Abstracts Intl. Conf. on Electronic Materials", (1998), S. 40. | |
| 327. | Dragosits, K., Knaipp, M., Selberherr, S.: Two-Dimensional Simulation of Ferroelectric Nonvolatile Memory Cells Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 368 - 371. https://doi.org/10.1007/978-3-7091-6827-1_91 | |
| 326. | Troger, C., Kosina, H., Selberherr, S.: A Consistent Inclusion of Nonparabolicity in a Schrödinger-Poisson Solver for Silicon Inversion Layers Vortrag: International Conference on Computational Physics, Singapore; 02.06.1997 - 04.06.1997; in: "Abstracts Intl. Conf. on Computational Physics", (1997), S. 26 - 27. | |
| 325. | Simlinger, T., Rottinger, M., Selberherr, S.: A Method for Unified Treatment of Interface Conditions Suitable for Device Simulation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 08.09.1997 - 10.09.1997; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1; S. 173 - 176. https://doi.org/10.1109/SISPAD.1997.621365 | |
| 324. | Kosina, H., Kaiblinger-Grujin, G., Selberherr, S.: A New Approach to Ionized-Impurity Scattering Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 08.09.1997 - 10.09.1997; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1; S. 205 - 208. https://doi.org/10.1109/SISPAD.1997.621373 | |
| 323. | Radi, M., Leitner, E., Hollensteiner, E., Selberherr, S.: A Novel Diffusion Coupled Oxidation Model Vortrag: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 22.09.1997 - 24.09.1997; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4; S. 472 - 475. | |
| 322. | Knaipp, M., Selberherr, S.: A Physically Based Substrate Current Simulation Vortrag: International Conference on VLSI and CAD (ICVC), Seoul; 13.10.1997 - 15.10.1997; in: "Proceedings Intl. Conf. On VLSI and CAD", (1997), S. 558 - 560. | |
| 321. | Knaipp, M., Grasser, T., Selberherr, S.: A Physically Based Substrate Current Simulation Poster: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 22.09.1997 - 24.09.1997; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4; S. 196 - 199. | |
| 320. | Radi, M., Leitner, E., Hollensteiner, E., Selberherr, S.: AMIGOS: Analytical Model Interface & General Object-Oriented Solver Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 08.09.1997 - 10.09.1997; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1; S. 331 - 334. https://doi.org/10.1109/SISPAD.1997.621405 | |
| 319. | Radi, M., Leitner, E., Hollensteiner, E., Selberherr, S.: AMIGOS: Analytical Model Interface & General Object-Oriented Solver Vortrag: Grundlagen und Technologie elektronischer Bauelemente, Großarl; 19.03.1997 - 22.03.1997; in: "Proceedings Seminar Basics and Technology of Electronic Devices", (1997), ISBN: 3-901578-02-1; S. 57 - 60. | |
| 318. | Mlekus, R., Selberherr, S.: An Object-Oriented Approach to the Management of Models Vortrag: Grundlagen und Technologie elektronischer Bauelemente, Großarl; 19.03.1997 - 22.03.1997; in: "Proceedings Seminar Basics and Technology of Electronic Devices", (1997), ISBN: 3-901578-02-1; S. 53 - 56. | |
| 317. | Radi, M., Leitner, E., Hollensteiner, E., Selberherr, S.: Analytical Partial Differential Equation Modeling Using AMIGOS Vortrag: International Conference on Artificial Intelligence and Soft Computing, Banff; 27.07.1997 - 01.08.1997; in: "Proceedings IASTED Intl. Conf. on Artificial Intelligence and Soft Computing", (1997), ISBN: 0-88986-229-x; S. 423 - 426. | |
| 316. | Köpf, C., Kosina, H., Selberherr, S.: Anisotropic Electron Transport in Lattice-Mismatch-Strained GaInAs Alloys Poster: Condensed Matter Physics Meeting, Pakota Island; 04.02.1997 - 07.02.1997; in: "Abstracts 21. Condensed Matter Physics Meeting", (1997), S. TP21. | |
| 315. | Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.: Dependence of Electron Mobility on Dopants in Heavily Doped Semiconductors Vortrag: Condensed Matter Physics Meeting, Pakota Island; 04.02.1997 - 07.02.1997; in: "Abstracts 21. Condensed Matter Physics Meeting", (1997), S. TA02. | |
| 314. | Langer, E.: "Device Simulation as a Customer of Technology Process Simulation"; Poster: International Workshop on Challenges in Predictive Process Simulation (ChiPPS), Wandlitz (eingeladen); 17.08.1997 - 20.08.1997; in: "Proceedings ChiPPS 97 Conf.", (1997), S. 1. | |
| 313. | Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.: Electron Mobility in Doped Semiconductors Vortrag: International Conference on Computational Physics, Singapore; 02.06.1997 - 04.06.1997; in: "Abstracts Intl. Conf. on Computational Physics", (1997), S. 30 - 31. | |
| 312. | Brech, H., Grave, T., Werthof, A., Siveris, H., Simlinger, T., Selberherr, S.: Influence of Backside Doping on the Nonlinear Capacitances of a PHEMT Affecting the VCO Frequency Characteristics Vortrag: International Symposium on Compound Semiconductors (ISCS), San Diego; 08.09.1997 - 11.09.1997; in: "Abstracts Intl. Symposium on Compound Semiconductors", (1997), S. ThA6. | |
| 311. | Kaiblinger-Grujin, G., Kosina, H., Köpf, C., Selberherr, S.: Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors Vortrag: International Conference on Defects in Semiconductors, Aveiro; 21.07.1997 - 25.07.1997; in: "Proceedings Intl. Conf. on Defects in Semiconductors", Proceedings Part 2, Section 11 (1997), S. 939 - 944. | |
| 310. | Köpf, C., Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.: Influence of Dopant Species on Electron Mobility in InP Vortrag: International Conference on Indium Phosphide an Related Materials, Hyannis; 11.05.1997 - 15.05.1997; in: "Proceedings Intl. Conf. on Indium Phosphide and Related Materials", (1997), S. 280 - 283. | |
| 309. | Brech, H., Simlinger, T., Grave, T., Selberherr, S.: Influence of Gatelength on the DC-Characteristics and ft of Pseudomorphic Power-HEMTs Vortrag: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Scheveningen; 25.05.1997 - 28.05.1997; in: "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (1997), S. 1 - 2. | |
| 308. | Brech, H., Grave, T., Simlinger, T., Selberherr, S.: Influence of T-Gate Shape and Footprint Length on PHEMT High Frequency Performance Vortrag: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Anaheim; 12.10.1997 - 15.10.1997; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (1997), ISBN: 0-7803-4083-3; S. 66 - 69. https://doi.org/10.1109/GAAS.1997.628239 | |
| 307. | Knaipp, M., Selberherr, S.: Investigation on Hydrodynamic Impact Ionization (II) in n-MOSFETs Vortrag: International Conference on Computational Physics, Singapore; 02.06.1997 - 04.06.1997; in: "Abstracts Intl. Conf. on Computational Physics", (1997), S. 37 - 38. | |
| 306. | Troger, C., Kosina, H., Selberherr, S.: Modeling Nonparabolicity Effects in Silicon Inversion Layers Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 08.09.1997 - 10.09.1997; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1; S. 323 - 326. https://doi.org/10.1109/SISPAD.1997.621403 | |
| 305. | Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.: Monte Carlo Simulation of Electron Transport in Doped Silicon Vortrag: High Performance Computing Asia Conference, Seoul; 28.04.1997 - 02.05.1997; in: "Proceedings High Performance Computing Asia 1997 Conf.", (1997), S. 444 - 449. | |
| 304. | Mlekus, R., Selberherr, S.: Object-Oriented Management of Algorithms and Models Vortrag: European Simulation Symposium (ESS), Passau; 19.10.1997 - 22.10.1997; in: "Proceedings European Simulation Symposium", (1997), ISBN: 1-56555-125-7; S. 601 - 605. | |
| 303. | Plasun, R., Pichler, C., Simlinger, T., Selberherr, S.: Optimization Tasks in Technology CAD Vortrag: European Simulation Symposium (ESS), Passau; 19.10.1997 - 22.10.1997; in: "Proceedings European Simulation Symposium", (1997), ISBN: 1-56555-125-7; S. 445 - 449. | |
| 302. | Köpf, C., Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.: Reexamination of Electron Mobility Dependence on Dopants in GaAs Vortrag: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 22.09.1997 - 24.09.1997; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4; S. 304 - 307. | |
| 301. | Kosina, H., Troger, C.: SPIN - A Schrödinger Poisson Solver Including Nonparabolic Bands Vortrag: International Workshop on Computational Electronics (IWCE), Notre Dame, IN, USA; 28.05.1997 - 30.05.1997; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1997), S. P51. | |
| 300. | Sabelka, R., Koyama, K., Selberherr, S.: STAP - A Finite Element Simulator for Three-Dimensional Thermal Analysis of Interconnect Structures Vortrag: European Simulation Symposium (ESS), Passau; 19.10.1997 - 22.10.1997; in: "Proceedings European Simulation Symposium", (1997), ISBN: 1-56555-125-7; S. 621 - 625. | |
| 299. | Wasshuber, C., Kosina, H., Selberherr, S.: Single-Electron Memories Vortrag: International Workshop on Computational Electronics (IWCE), Notre Dame, IN, USA; 28.05.1997 - 30.05.1997; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1997), S. FrP1. | |
| 298. | Plasun, R., Pichler, C., Simlinger, T., Selberherr, S.: Technology CAD for Smart Power Devices Vortrag: International Workshop on Processes of Semiconductor Devices, Delhi; 16.12.1997 - 20.12.1997; in: "Physics of Semiconductor Devices", V. Kumar, S. Agarwal (Hrg.); (1997), S. 481 - 488. | |
| 297. | Simlinger, T., Pichler, C., Plasun, R., Selberherr, S.: Technology CAD for Smart Power Devices Vortrag: International Semiconductor Conference (CAS), Sinaia (eingeladen); 07.10.1997 - 11.10.1997; in: "Proceedings CAS 97 Conf.", (1997), ISBN: 0-7803-3804-9; S. 383 - 393. | |
| 296. | Kosina, H., Selberherr, S.: Technology CAD: Process and Device Simulation Vortrag: International Conference on Microelectronics (MIEL), Nis (eingeladen); 14.09.1997 - 17.09.1997; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (1997), ISBN: 0-7803-3664-x; S. 441 - 450. https://doi.org/10.1109/ICMEL.1997.632866 | |
| 295. | Selberherr, S.: The State of the Art in Technology Computer-Aided Design Vortrag: Ultra Low Voltage Low Power Research Symposium, Portland (eingeladen); 05.09.1997; in: "Abstracts Ultra Low Voltage Low Power Research Symposium", (1997), S. 1. | |
| 294. | Selberherr, S.: The State of the Art in Technology Computer-Aided Design Vortrag: Primer Taller de Technicas de Simulacion en Semiconductores, Mexico City (eingeladen); 02.06.1997 - 03.06.1997; in: "Abstracts Primer Taller de Technicas de Simulacion en Semiconductores", (1997), S. 1. | |
| 293. | Fleischmann, P., Selberherr, S.: Three-Dimensional Delaunay Mesh Generation Using a Modified Advancing Front Approach Vortrag: International Meshing Roundtable, Park City; 13.10.1997 - 15.10.1997; in: "Proceedings 6th International Meshing Roundtable", (1997), S. 267 - 278. | |
| 292. | Stach, A., Sabelka, R., Selberherr, S.: Three-Dimensional Layout-Based Thermal and Capacitive Simulation of Interconnect Structures Vortrag: International Conference on Modelling, Identification and Control, Innsbruck; 17.02.1997 - 19.02.1997; in: "Proceedings IASTED Intl. Conf. on Modelling, Identification and Control", (1997), ISBN: 0-88986-217-6; S. 16 - 19. | |
| 291. | Kirchauer, H., Selberherr, S.: Three-Dimensional Photolithography Simulation Vortrag: Grundlagen und Technologie elektronischer Bauelemente, Großarl; 19.03.1997 - 22.03.1997; in: "Proceedings Seminar Basics and Technology of Electronic Devices", (1997), ISBN: 3-901578-02-1; S. 27 - 31. | |
| 290. | Strasser, R., Pichler, C., Selberherr, S.: VISTA - A Framework for Technology CAD Purposes Vortrag: European Simulation Symposium (ESS), Passau; 19.10.1997 - 22.10.1997; in: "Proceedings European Simulation Symposium", (1997), ISBN: 1-56555-125-7; S. 450 - 454. | |
| 289. | Schrom, G., De Vivek Selberherr, S.: VLSI Performance Metric Based on Minimum TCAD Simulations Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 08.09.1997 - 10.09.1997; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1; S. 25 - 28. https://doi.org/10.1109/SISPAD.1997.621327 | |
| 288. | Tuppa, W., Selberherr, S.: A CASE-Oriented Configuration Management Agent Vortrag: International Conference on Artificial Intelligence, Expert Systems and Neural Networks, Honolulu; 19.08.1996 - 21.08.1996; in: "Proceedings IASTED Intl. Conf. on Artificial Intelligence, Expert Systems and Neural Networks", (1996), ISBN: 0-88986-211-7; S. 368 - 371. | |
| 287. | Tuppa, W., Selberherr, S.: A CASE-Oriented Configuration Management Utility Vortrag: International Conference on Modelling and Simulation, Pittsburgh; 25.04.1996 - 27.04.1996; in: "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1996), ISBN: 0-88986-201-x; S. 83 - 87. | |
| 286. | Schrom, G., Stach, A., Selberherr, S.: A Charge Based MOSFET Model for Low-Voltage Mixed-Signal Applications Vortrag: European Solid-State Device Research Conference (ESSDERC), Bologna; 09.09.1996 - 11.09.1996; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x; S. 495 - 498. | |
| 285. | Tuppa, W., Selberherr, S.: A Configuration Management Utility with CASE-Orientation Vortrag: International Conference on Modelling, Simulation and Optimization, Gold Coast; 06.05.1996 - 09.05.1996; in: "Proceedings IASTED Intl. Conf. on Modelling, Simulation and Optimization", (1996), ISBN: 0-88986-197-8; S. 242 - 273. | |
| 284. | Schrom, G., Stach, A., Selberherr, S.: A Consistent Dynamic MOSFET Model for Low-Voltage Applications Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; S. 177 - 178. https://doi.org/10.1109/SISPAD.1996.865327 | |
| 283. | Wasshuber, C., Kosina, H.: "A Multipurpose Single Electron Device and Circuit Simulator"; Vortrag: Silicon Nanoelectronics Workshop, Honolulu; 09.06.1996 - 10.06.1996; in: "Abstracts Silicon Nanoelectronics Workshop", (1996), S. 37. | |
| 282. | Fleischmann, P., Selberherr, S.: A New Approach to Fully Unstructured Three-Dimensional Delaunay Mesh Generation with Improved Element Quality Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; S. 129 - 130. https://doi.org/10.1109/SISPAD.1996.865308 | |
| 281. | Wasshuber, C., Kosina, H.: "A Single Electron Device and Circuit Simulator"; Vortrag: Nanostructures and Mesoscopic Systems, Santa Fe; 19.05.1996 - 24.05.1996; in: "Proceedings Nanostructures and Mesoscopic Systems", (1996), S. 43. | |
| 280. | Wasshuber, C., Kosina, H.: A Single Electron Device and Circuit Simulator with a New Algorithm to Incorporate Co-Tunneling Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; S. 135 - 136. https://doi.org/10.1109/SISPAD.1996.865311 | |
| 279. | Puchner, H., Neary, P., Aronowitz, S., Selberherr, S.: A Transient Activation Model for Phosphorus after Sub-Amorphizing Channeling Implants Vortrag: European Solid-State Device Research Conference (ESSDERC), Bologna; 09.09.1996 - 11.09.1996; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x; S. 157 - 160. | |
| 278. | Knaipp, M., Simlinger, T., Kanert, W., Selberherr, S.: Analysis of Leakage Currents in Smart Power Devices Vortrag: European Solid-State Device Research Conference (ESSDERC), Bologna; 09.09.1996 - 11.09.1996; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x; S. 645 - 648. | |
| 277. | Köpf, C., Kosina, H., Selberherr, S.: Anisotropic Mobility Model for GaInAs Covering Full Composition and Strain Range in the GaAs-InAs System Vortrag: International Symposium on Compound Semiconductors (ISCS), St. Petersburg; 23.09.1996 - 27.09.1996; in: "Proceedings Intl. Symposium on Compound Semiconductors", (1996), S. 675 - 678. | |
| 276. | Köpf, C., Kosina, H., Selberherr, S.: Anisotropic Mobility Model for GaInAs Covering Full Composition and Strain Range in the GaAs-InAs System Vortrag: International Symposium on Compound Semiconductors (ISCS), St. Petersburg; 23.09.1996 - 27.09.1996; in: "Abstracts International Symposium on Compound Semiconductors (ISCS)", (1996), S. 30. | |
| 275. | Brech, H., Simlinger, T., Grave, T., Selberherr, S.: Current Transport in Double Heterojunction HEMTs Vortrag: European Solid-State Device Research Conference (ESSDERC), Bologna; 09.09.1996 - 11.09.1996; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x; S. 873 - 876. | |
| 274. | Fleischmann, P., Sabelka, R., Stach, A., Strasser, R., Selberherr, S.: Grid Generation for Three-Dimensional Process and Device Simulation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan (eingeladen); 02.09.1996 - 04.09.1996; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; S. 161 - 166. https://doi.org/10.1109/SISPAD.1996.865321 | |
| 273. | Martins, R., Selberherr, S.: Layout Data in TCAD Frameworks Vortrag: European Simulation Multiconference (ESM), Budapest; 02.06.1996 - 06.06.1996; in: "Proceedings European Simulation Multiconference", (1996), ISBN: 1-56555-097-8; S. 1122 - 1126. | |
| 272. | Bohmayr, W., Burenkov, A., Lorenz, J., Ryssel, H., Selberherr, S.: Monte Carlo Simulation of Silicon Amorphization During Ion Implantation Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; S. 17 - 18. https://doi.org/10.1109/SISPAD.1996.865252 | |
| 271. | Selberherr, S.: Prozeßsimulation: Stand der Technik Vortrag: Verhandlungen der DPG, Frühjahrstagung Festkörperphysik, Regensburg (eingeladen); 25.03.1996 - 29.03.1996; in: "Verhandlungen der DPG", (1996), S. 1360. | |
| 270. | Kirchauer, H., Selberherr, S.: Rigorous Three-Dimensional Photolithography Simulation Over Nonplanar Structures Vortrag: European Solid-State Device Research Conference (ESSDERC), Bologna; 09.09.1996 - 11.09.1996; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x; S. 347 - 350. | |
| 269. | Pichler, C., Plasun, R., Strasser, R., Selberherr, S.: Simulation Environment for Semiconductor Technology Analysis Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; S. 147 - 148. https://doi.org/10.1109/SISPAD.1996.865314 | |
| 268. | Langer, E.: "Simulation technologischer Prozesse"; Vortrag: ÖPG-Jahrestagung, Johannes Kepler Universität Linz (eingeladen); 23.09.1996 - 27.09.1996; in: "Tagungsband ÖPG-Tagung 1996", (1996), S. 130. | |
| 267. | Selberherr, S.: The MINIMOS Simulator and TUV Perspective on TCAD Vortrag: Computer-Aided Design of IC Processes and Devices, Stanford (eingeladen); 07.08.1996 - 08.08.1996; in: "Symposium on Computer-Aided Design of IC Processes and Devices", (1996), S. 1 - 14. | |
| 266. | Kirchauer, H., Selberherr, S.: Three-Dimensional Photoresist Exposure and Development Simulation Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; S. 99 - 100. https://doi.org/10.1109/SISPAD.1996.865291 | |
| 265. | Langer, E., Selberherr, S.: Three-Dimensional Process Simulation for Advanced Silicon Semiconductor Devices Vortrag: International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), Smolenice (eingeladen); 20.10.1996 - 24.10.1996; in: "Proceedings ASDAM 96 Conf.", (1996), S. 169 - 177. | |
| 264. | Kirchauer, H., Selberherr, S.: Three-Dimensional Simulation of Light-Scattering over Nonplanar Substrates in Photolithography Poster: Electron, Ion and Photon Beam Technology and Nanofabrication Conference, Atlanta; 28.05.1996 - 31.05.1996; in: "Abstracts Electron, Ion and Photon Beam Technology and Nanofabrication Conference", (1996), S. 155 - 156. | |
| 263. | Brech, H., Simlinger, T., Grave, T., Selberherr, S.: Two-Dimensional Simulation of a Pseudomorphic HEMT with MINIMOS-NT Vortrag: III-V Semiconductor Device Simulation Workshop, Eindhoven; 09.05.1996 - 10.05.1996; in: "Proceedings Ninth III-V Semiconductor Device Simulation Workshop", (1996), S. 1 - 3. | |
| 262. | Schrom, G., Selberherr, S.: Ultra-Low-Power CMOS Technologies Vortrag: International Semiconductor Conference (CAS), Sinaia (eingeladen); 09.10.1996 - 12.10.1996; in: "Proceedings CAS 96 Conf.", (1996), ISBN: 0-7803-3233-4; S. 237 - 246. | |
| 261. | Leitner, E., Bohmayr, W., Fleischmann, P., Strasser, E., Selberherr, S.: 3D TCAD at TU Vienna Vortrag: 3-Dimensional Process Simulation Workshop, Erlangen (eingeladen); 05.09.1995; in: "Proceedings 3-Dimensional Process Simulation Workshop", (1995), ISBN: 3-211-82741-2; S. 136 - 161. https://doi.org/10.1007/978-3-7091-6905-6_7 | |
| 260. | Khalil, N., Nanz, G., Rios, R., Selberherr, S.: A B-Splines Regression Technique to Determine One-Dimensional MOS Doping Profiles Vortrag: European Solid-State Device Research Conference (ESSDERC), Den Haag; 25.09.1995 - 27.09.1995; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1995), ISBN: 2-86332-182-x; S. 191 - 194. | |
| 259. | Rieger, G., Halama, S., Selberherr, S.: A Graphical Editor for TCAD Purposes Poster: Conference on Geometric Design, Nashville; 30.12.1995; in: "Abstracts SIAM Conf. On Geometric Design", (1995), S. A17. | |
| 258. | Harrer, M., Kosina, H.: A Hot-Hole Transport Model Based on Spherical Harmonics Expansion of the Anisotropic Bandstructure Poster: International Workshop on Computational Electronics (IWCE), Tempe, AZ, USA; 30.10.1995 - 02.11.1995; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1995), S. 24. | |
| 257. | Kosina, H., Harrer, M., Vogl, P., Selberherr, S.: A Monte Carlo Transport Model Based on Spherical Harmonics Expansion of the Valence Bands Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 396 - 399. https://doi.org/10.1007/978-3-7091-6619-2_96 | |
| 256. | Rieger, G., Halama, S., Selberherr, S.: A Programmable Tool for Interactive Wafer-State Level Data Processing Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 58 - 61. https://doi.org/10.1007/978-3-7091-6619-2_13 | |
| 255. | Puchner, H., Selberherr, S.: A Two-Dimensional Dopant Diffusion Model for Polysilicon Vortrag: Meeting on Impurity Diffusion and Defects in Silicon and Related Materials, Athen; 03.05.1995 - 04.05.1995; in: "Abstracts Meeting on Impurity Diffusion and Defects in Silicon and Related Materials", (1995), S. 16 - 17. | |
| 254. | Leitner, E., Selberherr, S.: Adaptive Tessellation for the Three-Dimensional Simulation of Doping Profiles Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 24.09.1995 - 28.09.1995; in: "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), S. 610 - 612. | |
| 253. | Kaiblinger-Grujin, G., Kosina, H.: An Improved Ionized Impurity Scattering Model for Monte Carlo Calculations Poster: International Workshop on Computational Electronics (IWCE), Tempe, AZ, USA; 30.10.1995 - 02.11.1995; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1995), S. 25. | |
| 252. | Burenkov, A., Bohmayr, W., Lorenz, J., Ryssel, H., Selberherr, S.: Analytical Model for Phosphorus Large Angle Tilted Implantation Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 488 - 491. https://doi.org/10.1007/978-3-7091-6619-2_118 | |
| 251. | Bohmayr, W., Selberherr, S.: Effiziente Methoden für die Monte Carlo Simulation der Ionenimplantation in multidimensionale kristalline Halbleiterstrukturen Vortrag: Seminar Grundlagen und Technologie elektronischer Bauelemente, Grossarl; 05.04.1995 - 08.04.1995; in: "Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente", (1995), ISBN: 3-901578-01-3; S. 63 - 66. | |
| 250. | Bohmayr, W., Selberherr, S.: Investigation of Channeling in Field Oxide Corners by Three-Dimensional Monte Carlo Simulation of Ion Implantation Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 24.09.1995 - 28.09.1995; in: "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), S. 304 - 306. | |
| 249. | Simlinger, T., Kosina, H., Rottinger, M., Selberherr, S.: MINIMOS-NT: A Generic Simulator for Complex Semiconductor Devices Vortrag: European Solid-State Device Research Conference (ESSDERC), Den Haag; 25.09.1995 - 27.09.1995; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1995), ISBN: 2-86332-182-x; S. 83 - 86. | |
| 248. | Köpf, C., Kosina, H., Selberherr, S.: Mobility Model for III-V Compounds Suited for Hydrodynamic Device Simulation Vortrag: International Symposium on Compound Semiconductors (ISCS), Cheju Island; 28.08.1995 - 02.09.1995; in: "Proceedings Intl.Symposium on Compound Semiconductors", (1995), S. 1255 - 1260. | |
| 247. | Köpf, C., Kosina, H., Selberherr, S.: Mobility Model for III-V Compounds Suited for Hydrodynamic Device Simulation Vortrag: International Symposium on Compound Semiconductors (ISCS), Cheju Island; 28.08.1995 - 02.09.1995; in: "Abstracts Intl.Symposium on Compound Semiconductors", (1995), S. 108. | |
| 246. | Kosina, H., Simlinger, T.: "Modeling Concepts for Modern Semiconductor Devices"; Vortrag: International Semiconductor Conference (CAS), Sinaia (eingeladen); 11.10.1995 - 14.10.1995; in: "Proceedings CAS 95 Intl. Semiconductor Conference", (1995), ISBN: 0-7803-2647-4; S. 27 - 36. | |
| 245. | Mlekus, R., Ledl, C., Strasser, E., Selberherr, S.: Polygonal Geometry Reconstruction after Cellular Etching or Deposition Simulation Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 50 - 53. https://doi.org/10.1007/978-3-7091-6619-2_11 | |
| 244. | Puchner, H., Selberherr, S.: Simulation of Ion Implantation Using the Four-Parameter Kappa Distribution Function Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 24.09.1995 - 28.09.1995; in: "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), S. 295 - 297. | |
| 243. | Wasshuber, C., Kosina, H.: Simulation of a Single Electron Tunnel Transistor with Inclusion of Inelastic Macroscopic Quantum Tunneling of Charge Poster: International Workshop on Computational Electronics (IWCE), Tempe, AZ, USA; 30.10.1995 - 02.11.1995; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1995), S. 4. | |
| 242. | Leitner, E., Selberherr, S.: Simulation von thermischen Diffusionsprozessen in dreidimensionalen Halbleiterstrukturen Vortrag: Seminar Grundlagen und Technologie elektronischer Bauelemente, Grossarl; 05.04.1995 - 08.04.1995; in: "Seminar Grundlagen und Technologie elektronischer Bauelemente", (1995), ISBN: 3-901578-01-3; S. 67 - 70. | |
| 241. | Bohmayr, W., Burenkov, A., Lorenz, J., Ryssel, H., Selberherr, S.: Statistical Accuracy and CPU Time Characteristic of Three Trajectory Split Methods for Monte Carlo Simulation of Ion Implantation Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 492 - 495. https://doi.org/10.1007/978-3-7091-6619-2_119 | |
| 240. | Pichler, C., Khalil, N., Schrom, G., Selberherr, S.: TCAD Optimization Based on Task-Level Framework Services Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 70 - 73. https://doi.org/10.1007/978-3-7091-6619-2_16 | |
| 239. | Selberherr, S., Fischer, C., Halama, S., Pichler, C., Rieger, G., Schrom, G., Simlinger, T.: The IC Processes of the Future: Advances in Device Structures and Device Simulation Techniques Vortrag: Eschola da Sociedade Brasileira de Microeletronica (EBMICRO), Recife (eingeladen); 15.01.1995 - 20.01.1995; in: "Proceedings IV EBMICRO", Vol. 1 (1995), S. 87 - 114. | |
| 238. | Rieger, G., Selberherr, S.: The PIF Editor - a Data Processor for the VISTA TCAD Framework Vortrag: High Performance Computing Asia Conference, Taipei; 18.09.1995 - 22.09.1995; in: "Proceedings High Performance Computing Asia 1995 Conference", (1995), Paper-Nr. el-036, 11 S. | |
| 237. | Mukai, M., Tatsumi, T., Nakauchi, N., Kobayashi, T., Koyama, K., Komatsu, Y., Bauer, R., Rieger, G., Selberherr, S.: The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 151 - 154. https://doi.org/10.1007/978-3-7091-6619-2_35 | |
| 236. | Leitner, E., Selberherr, S.: Three-Dimensional Grid Adaptation Using a Mixed-Element Decomposition Method Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 464 - 467. https://doi.org/10.1007/978-3-7091-6619-2_112 | |
| 235. | Bohmayr, W., Selberherr, S.: Trajectory Split Method for Monte Carlo Simulation of Ion Implantation Demonstrated by Three-Dimensional Poly-Buffered LOCOS Field Oxide Corners Vortrag: VLSI Technology, Systems and Applications Symposium (VLSITSA), Taipei; 31.05.1995 - 02.06.1995; in: "Proceedings VLSI Technology, Systems and Applications Symposium", (1995), ISBN: 0-7803-2773-x; S. 104 - 107. | |
| 234. | Khalil, N., Faricelli, J., Huang, C., Selberherr, S.: Two-Dimensional Dopant Profiling of Submicron MOSFETs Using Nonlinear Least Squares Inverse Modeling Vortrag: Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, Research Triangle Park (eingeladen); 20.03.1995 - 22.03.1995; in: "Proceedings Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors", (1995), S. 6.1 - 6.9. | |
| 233. | Simlinger, T., Deutschmann, R., Fischer, C., Kosina, H., Selberherr, S.: Two-Dimensional Hydrodynamic Simulation of High Electron Mobility Transistors Using a Block Iterative Scheme in Combination with Full Newton Method Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 24.09.1995 - 28.09.1995; in: "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), S. 589 - 591. | |
| 232. | Rottinger, M., Simlinger, T., Selberherr, S.: Two-Dimensional Transient Simulation of Charge-Coupled Devices Using MINIMOS-NT Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 440 - 443. https://doi.org/10.1007/978-3-7091-6619-2_106 | |
| 231. | Schrom, G., Liu, D., Fischer, C., Pichler, C., Svensson, Ch., Selberherr, S.: VLSI Performance Analysis Method for Low-Voltage Circuit Operation Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 24.09.1995 - 28.09.1995; in: "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), S. 328 - 330. | |
| 230. | Khalil, N., Faricelli, J., Bell, D., Selberherr, S.: A Novel Method for Extracting the Two-Dimensional Doping Profile of a Sub-Half Micron MOSFET Vortrag: Symposium on VLSI Technology, Honolulu; 07.06.1994 - 09.06.1994; in: "Proceedings Symposium on VLSI Technology", (1994), ISBN: 0-7803-1921-4; S. 131 - 132. | |
| 229. | Stiftinger, M., Soppa, W., Selberherr, S.: A Scalable Physically Based Analytical DMOS Transistor Model Vortrag: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 12.09.1994 - 15.09.1994; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1994), ISBN: 2-86332-157-9; S. 825 - 828. | |
| 228. | Puchner, H., Selberherr, S.: An Advanced Model for Dopant Diffusion in Polysilicon Vortrag: Conference on Emerging Issues in Mathematics and Computation from the Materials Sciences, Pittsburgh; 18.04.1994 - 20.04.1994; in: "Abstracts Conference on Emerging Issues in Mathematics and Computation from the Materials Sciences", (1994), S. A13. | |
| 227. | Schrom, G., Liu, D., Pichler, C., Svensson, Ch., Selberherr, S.: Analysis of Ultra-Low-Power CMOS With Process and Device Simulation Vortrag: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 11.09.1994 - 15.09.1994; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1994), ISBN: 2-86332-157-9; S. 679 - 682. | |
| 226. | Puchner, H., Selberherr, S.: Dynamic Grain-Growth and Static Clustering Effects on Dopant Diffusion in Polysilicon Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Honolulu; 05.06.1994 - 06.06.1994; in: "Proceedings NUPAD V, Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits", (1994), ISBN: 0-7803-1867-6; S. 109 - 112. | |
| 225. | Simlinger, T., Fischer, C., Deutschmann, R., Selberherr, S.: MINIMOS NT - a Hydrodynamic Simulator for High Electron Mobility Transistors Vortrag: Gallium Arsenide Simulation Workshop, Duisburg; 06.10.1994 - 07.10.1994; in: "Proceedings 8th GaAs Simulation Workshop", (1994). | |
| 224. | Fischer, C., Selberherr, S.: Optimum Scaling of Non-Symmetric Jacobian Matrices for Threshold Pivoting Preconditioners Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Honolulu; 05.06.1994 - 06.06.1994; in: "Proceedings NUPAD V, Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits", (1994), ISBN: 0-7803-1867-6; S. 123 - 126. | |
| 223. | Bauer, R., Selberherr, S.: Preconditioned CG-Solvers and Finite Element Grids Vortrag: Colorado Conference on Iterative Methods, Breckenridge; 05.04.1994 - 09.04.1994; in: "Proceedings Colorado Conference on Iterative Methods", Vol.2 (1994), S. 1 - 5. | |
| 222. | Puchner, H., Selberherr, S.: Simulation of Graft Base Formation and Emitter Outdiffusion in High-Performance Bipolar LSIs Vortrag: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 11.09.1994 - 15.09.1994; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1994), ISBN: 2-86332-157-9; S. 165 - 168. | |
| 221. | Langer, E.: "Simulation of Microstructures"; Vortrag: International Semiconductor Conference (CAS), Sinaia (eingeladen); 11.10.1994 - 16.10.1994; in: "Proceedings CAS'94", (1994), S. 47 - 56. | |
| 220. | Langer, E., Selberherr, S.: The Status of Process and Device Simulation Vortrag: International Conference on Microelectronics (MIEL), Istanbul (eingeladen); 05.09.1994 - 07.09.1994; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (1994), S. 256 - 260. | |
| 219. | Strasser, E., Selberherr, S.: Three-Dimensional Models and Algorithms for Wafer Topography Evaluation Vortrag: Microelectronics Conference, Zvenigorod (eingeladen); 28.11.1994 - 03.12.1994; in: "Proceedings Microelectronics '94", (1994), S. 23 - 24. | |
| 218. | Strasser, E., Selberherr, S.: Three-Dimensional Simulation of Step Coverage for Contact Hole Metallization Vortrag: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 11.09.1994 - 15.09.1994; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1994), ISBN: 2-86332-157-9; S. 339 - 342. | |
| 217. | Deutschmann, R., Fischer, C., Simlinger, T., Köpf, C., Selberherr, S.: Two-Dimensional Hydrodynamic Simulation of Heterostructure Devices Vortrag: Gallium Arsenide Simulation Workshop, Duisburg; 06.10.1994 - 07.10.1994; in: "Proceedings 8th GaAs Simulation Workshop", (1994). | |
| 216. | Strasser, E., Selberherr, S.: A General Simulation Method for Etching and Deposition Processes Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 07.09.1993 - 09.09.1993; in: "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5; S. 357 - 360. https://doi.org/10.1007/978-3-7091-6657-4_88 | |
| 215. | Strasser, E., Wimmer, K., Selberherr, S.: A New Method for Simulation of Etching and Deposition Processes Vortrag: VLSI Process and Device Modeling Workshop (VPAD), Nara; 14.05.1993 - 15.05.1993; in: "Proceedings VPAD Workshop", (1993), ISBN: 0-7803-1338-0; S. 54 - 55. | |
| 214. | Stiftinger, M., Soppa, W., Selberherr, S.: A Physically Based DC- and AC-Model for Vertical Smart Power DMOS Transistors Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble; 13.09.1993 - 16.09.1993; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1993), ISBN: 2-86332-135-8; S. 617 - 620. | |
| 213. | Schrom, G., Selberherr, S., Unterleitner, F., Trontelj, J., Kunc, V.: Analysis of a CMOS-Compatible Vertical Bipolar Transistor Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 07.09.1993 - 09.09.1993; in: "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5; S. 261 - 264. https://doi.org/10.1007/978-3-7091-6657-4_64 | |
| 212. | Strasser, E., Selberherr, S.: Analysis of the Fabrication Process of Multilayer Vertical Stacked Capacitors Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble; 13.09.1993 - 16.09.1993; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1993), ISBN: 2-86332-135-8; S. 587 - 590. | |
| 211. | Bauer, R., Stiftinger, M., Selberherr, S.: Capacitance Calculation of VLSI Multilevel Wiring Structures Poster: VLSI Process and Device Modeling Workshop (VPAD), Nara; 14.05.1993 - 15.05.1993; in: "Proceedings VPAD Workshop", (1993), ISBN: 0-7803-1338-0; S. 142 - 143. | |
| 210. | Deutschmann, R., Fischer, C., Sala, C., Selberherr, S.: Comparison between Measured and Simulated Device Characteristics of High Electron Mobility Transistors Vortrag: Gallium Arsenide Simulation Group Meeting, Harrogate; 22.04.1993 - 23.04.1993; in: "Abstracts of the 7th GaAs Simulation Group Meeting", (1993), S. 1 - 2. | |
| 209. | Hackel, M., Kosina, H., Selberherr, S.: Electron Transport in Silicon Dioxide at Intermediate and High Electric Fields Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 07.09.1993 - 09.09.1993; in: "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5; S. 65 - 68. https://doi.org/10.1007/978-3-7091-6657-4_15 | |
| 208. | Brand, H., Selberherr, S.: Electrothermal Analysis of Latch-Up in an IGT Poster: VLSI Process and Device Modeling Workshop (VPAD), Nara; 14.05.1993 - 15.05.1993; in: "Proceedings VPAD Workshop", (1993), ISBN: 0-7803-1338-0; S. 116 - 117. | |
| 207. | Deutschmann, R., Fischer, C., Sala, C., Selberherr, S.: Evaluation of Effective Device Parameters by Comparison of Measured and Simulated C-V Characteristics for Conventional and Pseudomorphic HEMTs Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 07.09.1993 - 09.09.1993; in: "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5; S. 461 - 464. https://doi.org/10.1007/978-3-7091-6657-4_114 | |
| 206. | Deutschmann, R., Sala, C., Fischer, C., Selberherr, S.: Measurement and Simulation of the C-V Characteristics of High Electron Mobility Transistors Vortrag: General Conference of the Condensed Matter Division of the European Physical Society, Regensburg; 29.03.1993 - 02.04.1993; in: "Abstracts of the 13th General Conference of the Condensed Matter Division European Physical Society", 17A (1993), S. 1457. | |
| 205. | Brand, H., Selberherr, S.: Modeling and Simulation of Electrothermal Effects in Power Semiconductor Devices Vortrag: International Conference on Numerical Methods in Thermal Problems, Swansea; 12.07.1993 - 16.07.1993; in: "Proceedings International Conference on Numerical Methods in Thermal Problems", (1993), ISBN: 0-906674-80-8; S. 1553 - 1564. | |
| 204. | Schrom, G., Selberherr, S., Unterleitner, F., Trontelj, J., Kunc, V.: Overvoltage Protection with a CMOS-Compatible BJT Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble; 13.09.1993 - 16.09.1993; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1993), ISBN: 2-86332-135-8; S. 899 - 902. | |
| 203. | Habas, P.: "Physics and Modeling in Concerning Hot-Carrier Degradation in MOSFETs"; Vortrag: Conference on Microelectronics and Optoelectronics, Nis (eingeladen); 26.10.1993 - 28.10.1993; in: "Proceedings Conference on Microelectronics and Optoelectronics", (1993), S. 179 - 188. | |
| 202. | Heinreichsberger, O., Thurner, M., Selberherr, S.: Practical Use of a Hierarchical Linear Solver Concept for 3D MOS Device Simulation Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 07.09.1993 - 09.09.1993; in: "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5; S. 85 - 88. https://doi.org/10.1007/978-3-7091-6657-4_20 | |
| 201. | Pichler, C., Selberherr, S.: Process Flow Representation within the VISTA Framework Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 06.09.1993 - 09.09.1993; in: "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5; S. 25 - 28. https://doi.org/10.1007/978-3-7091-6657-4_5 | |
| 200. | Pichler, C., Selberherr, S.: Rapid Semiconductor Process Design with the VISTA Framework: Integration of Simulation Tools Vortrag: International Conference on Modelling and Simulation, Pittsburgh; 10.05.1993 - 12.05.1993; in: "Proceedings IASTED International Conference on Modelling and Simulation", (1993), S. 147 - 150. | |
| 199. | Hackel, M., Kosina, H., Selberherr, S.: Steady-State Electron Transport in Silicon Dioxide Employing Different Electronic Band-Structures Vortrag: International Workshop on Computational Electronics (IWCE), Leeds, UK; 11.08.1993 - 13.08.1993; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (1993), S. 186 - 190. | |
| 198. | Selberherr, S.: Technology Computer-Aided Design Vortrag: International Workshop on Computational Electronics (IWCE), Leeds, UK (eingeladen); 11.08.1993 - 13.08.1993; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (1993), S. 37 - 44. | |
| 197. | Halama, S., Fasching, F., Fischer, C., Kosina, H., Leitner, E., Pichler, C., Pimingstorfer, H., Puchner, H., Rieger, G., Schrom, G., Simlinger, T., Stiftinger, M., Stippel, H., Strasser, E., Tuppa, W., Wimmer, K., Selberherr, S.: The Viennese Integrated System for Technology CAD Applications Vortrag: Workshop on Technology CAD Systems, Wien (eingeladen); 06.09.1993; in: "Proceedings Technology CAD Systems Workshop", (1993), ISBN: 3-211-82505-3; S. 197 - 236. https://doi.org/10.1007/978-3-7091-9315-0_10 | |
| 196. | Stippel, H., Selberherr, S.: Three Dimensional Monte Carlo Simulation of Ion Implantation with Octree Based Point Location Poster: VLSI Process and Device Modeling Workshop (VPAD), Nara; 14.05.1993 - 15.05.1993; in: "Proceedings VPAD Workshop", (1993), ISBN: 0-7803-1338-0; S. 122 - 123. | |
| 195. | Habas, P., Selberherr, S.: A Closed-Loop Extraction of the Spatial Distribution of Interface Traps Based on Numerical Model of the Charge-Pumping Experiment Poster: Solid State Devices and Materials Conference (SSDM), Tsukuba; 26.08.1992 - 28.08.1992; in: "Proceedings SSDM 92 Conference", (1992), S. 170 - 172. | |
| 194. | Kosina, H., Selberherr, S.: A Monte Carlo MOSFET Simulator Based on a New Method for the Poisson-Transport Iteration Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 31.05.1992 - 01.06.1992; in: "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7; S. 117 - 122. | |
| 193. | Stiftinger, M., Selberherr, S.: A Physically Based Analytical Model for Vertical DMOS Transistors Vortrag: Internationales wissenschaftliches Kolloquium, Ilmenau; 21.09.1992 - 24.09.1992; in: "37. Internationales wissenschaftliches Kolloquium", 2 (1992), S. 11 - 16. | |
| 192. | Stippel, H., Halama, S., Hobler, G., Wimmer, K., Selberherr, S.: Adaptive Grid for Monte Carlo Simulation of Ion Implantation Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 31.05.1992 - 01.06.1992; in: "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7; S. 231 - 236. | |
| 191. | Pimingstorfer, H., Selberherr, S.: Advanced MOS Device Engineering Utilizing a Technology CAD Framework Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 18.10.1992 - 24.10.1992; in: "Proceedings Solid State and Integrated Circuit Technology 92 Conference", (1992), S. 391 - 393. | |
| 190. | Stiftinger, M., Selberherr, S.: An Analytical DC- and AC-Model for Vertical Smart Power DMOS Transistors Vortrag: International Seminar on Power Semiconductors (ISPS), Prag; 09.09.1992 - 11.09.1992; in: "Proceedings ISPS 92", (1992), S. 89 - 93. | |
| 189. | Heinreichsberger, O., Habas, P., Selberherr, S.: Analysis of Geometric Charge-Pumping Components in a Thin-Film SOI Device Vortrag: European Solid-State Device Research Conference (ESSDERC), Leuven; 14.09.1992 - 17.09.1992; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1992), ISBN: 0-444-89478-0; S. 819 - 822. https://doi.org/10.1016/0167-9317(92)90552-3 | |
| 188. | Habas, P., Heinreichsberger, O., Selberherr, S.: Analysis of the Degradation of n-channel LDD MOSFETs by Numerical Simulation of the Carge-Pumping Experiment Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 18.10.1992 - 24.10.1992; in: "Proceedings Solid State and Integrated Circuit Technology 92 Conference", (1992), S. 691 - 693. | |
| 187. | Bauer, R., Selberherr, S.: Calculating Coupling Capacitances of Three-Dimensional Interconnections Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 18.10.1992 - 24.10.1992; in: "Proceedings Solid State and Integrated Circuit Technology 92 Conference", (1992), S. 697 - 699. | |
| 186. | Halama, S., Fasching, F., Pimingstorfer, H., Tuppa, W., Selberherr, S.: Consistent User Interface and Task-Level Architecture of a TCAD System Poster: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 31.05.1992 - 01.06.1992; in: "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7; S. 237 - 242. | |
| 185. | Gartner, W., Wimmer, K.: "Diffusion in Layered Matter: Selective Excitation Decoding, Magnetic Resonance Images in the Applied Sciences"; Vortrag: Workshop Syllabus, Durham; 26.10.1992 - 28.10.1992; in: "Proceedings Workshop Syllabus", (1992), S. 16. | |
| 184. | Halama, S., Selberherr, S.: Future Aspects of Process and Device Simulation Vortrag: Semiconductor Engineering and Technology Symposium (SET), Warschau (eingeladen); 12.10.1992 - 14.10.1992; in: "Abstracts SET 92 Conference", (1992), ISBN: 83-01-11293-x; S. 83 - 85. | |
| 183. | Stippel, H., Fasching, F., Fischer, C., Halama, S., Pimingstorfer, H., Tuppa, W., Wimmer, K., Selberherr, S.: Implementation of a TCAD Framework Vortrag: European Simulation Multiconference (ESM), York; 01.06.1992 - 03.06.1992; in: "Proceedings European Simulation Multiconference", (1992), ISBN: 1-56555-013-7; S. 131 - 135. | |
| 182. | Kosina, H., Selberherr, S.: Improved Algorithms in Monte Carlo Device Simulation Vortrag: International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA (eingeladen); 28.05.1992 - 29.05.1992; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (1992), S. 43 - 48. | |
| 181. | Bürger, W., Faber, M., Hackel, M., Markum, H., Müller, M.: "Inhomogeneous Universes from Lattice QCD with Dynamical Quarks"; Vortrag: International Symposium on Nuclear Astrophysics, Karlsruhe; 06.07.1992 - 10.07.1992; in: "Proceedings of the International Symposium on Nuclear Astrophysics", (1992), S. 441 - 446. | |
| 180. | Grubmair, P., Habas, P., Heinreichsberger, O., Kosina, H., Sala, C., Selberherr, S.: Recent Advances in Device Simulation at the TU-Vienna Vortrag: International Semiconductor Conference (CAS), Sinaia (eingeladen); 06.10.1992 - 11.10.1992; in: "Proceedings CAS 92 Conference", (1992), S. 347 - 358. | |
| 179. | Bürger, W., Faber, M., Hackel, M., Markum, H., Müller, M.: "Surface Energy and Chiral Interface of a Coexisting Quark-Hadron System"; Vortrag: Particle Production in Highly Exited Matter Conference, Il Ciocco; 12.07.1992 - 24.07.1992; in: "Proceedings of Particle Production in Highly Exited Matter Conference", (1992), S. 239 - 241. | |
| 178. | Selberherr, S.: Technology Computer-Aided Design Vortrag: International Conference on Science and Technology of Electron Devices (STEDCON), Kruger Park (eingeladen); 16.11.1992 - 18.11.1992; in: "Abstracts STEDCON 92 Conference", (1992), S. 26. | |
| 177. | Stippel, H., Hobler, G., Selberherr, S.: Three-Dimensional Simulation of Ion Implantation Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 18.10.1992 - 24.10.1992; in: "Proceedings Solid State and Integrated Circuit Technology 92 Conference", (1992), S. 703 - 705. | |
| 176. | Habas, P., Heinreichsberger, O., Selberherr, S.: Transient Two-Dimensional Numerical Analysis of the Charge-Pumping Experiment Vortrag: European Solid-State Device Research Conference (ESSDERC), Leuven; 14.09.1992 - 17.09.1992; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1992), ISBN: 0-444-89478-0; S. 687 - 690. https://doi.org/10.1016/0167-9317(92)90522-S | |
| 175. | Langer, E., Selberherr, S.: Transport in MOSFETs, MODFETs and HEMTs Vortrag: International Symposium on Signal, Systems, and Electronics (ISSSE), Paris (eingeladen); 01.09.1992 - 04.09.1992; in: "Proceedings ISSSE 92", (1992), S. 626 - 633. | |
| 174. | Brand, H., Selberherr, S.: Two Dimensional Simulation of Thermal Runaway in a Nonplanar GTO-Thyristor Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 31.05.1992 - 01.06.1992; in: "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7; S. 129 - 134. | |
| 173. | Habas, P., Lugbauer, A., Selberherr, S.: Two-Dimensional Numerical Modeling of Interband Tunneling Accounting for Nonuniform Electric Field Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 31.05.1992 - 01.06.1992; in: "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7; S. 135 - 140. | |
| 172. | Heinreichsberger, O., Selberherr, S., Stiftinger, M.: 3D MOS Device Simulation on a Connection Machine Vortrag: Conference on Parallel Processing for Scientific Computing, Houston; 25.03.1991 - 27.03.1991; in: "Abstracts SIAM Conf. in Parallel Processing for Scientific Computing", (1991), ISBN: 0-89871-303-x; S. 388 - 393. | |
| 171. | Stiftinger, M., Heinreichsberger, O., Selberherr, S.: A Collection of Iterative Algorithms for VLSI-Device Simulation Vortrag: International Congress on Industrial and Applied Mathematics (ICIAM), Washington (eingeladen); 08.07.1991 - 12.07.1991; in: "Abstracts ICIAM 91 Conference", (1991), S. 205. | |
| 170. | Fasching, F., Fischer, C., Halama, S., Pimingstorfer, H., Read, H., Selberherr, S., Stippel, H., Tuppa, W., Verhas, P., Wimmer, K.: A New Open Technology CAD System Vortrag: European Solid-State Device Research Conference (ESSDERC), Montreux; 16.09.1991 - 19.09.1991; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1991), ISBN: 0-444-89066-1; S. 217 - 220. https://doi.org/10.1016/0167-9317(91)90216-Z | |
| 169. | Fasching, F., Fischer, C., Selberherr, S., Stippel, H., Tuppa, W., Read, H.: A PIF Implementation for TCAD Purposes Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Zürich; 12.09.1991 - 14.09.1991; in: "Proceedings SISDEP 91", (1991), ISBN: 3-89191-476-8; S. 477 - 482. | |
| 168. | Pimingstorfer, H., Halama, S., Selberherr, S.: A TCAD Environment for Process and Device Engineering Vortrag: International Conference on VLSI and CAD (ICVC), Seoul; 22.10.1991 - 25.10.1991; in: "Proceedings International Conference on VLSI and CAD 91", (1991), S. 280 - 283. | |
| 167. | Pimingstorfer, H., Halama, S., Selberherr, S., Wimmer, K., Verhas, P.: A Technology CAD Shell Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Zürich; 12.09.1991 - 14.09.1991; in: "Proceedings SISDEP 91", (1991), ISBN: 3-89191-476-8; S. 409 - 416. | |
| 166. | Fasching, F., Fischer, C., Halama, S., Pimingstorfer, H., Read, H., Selberherr, S., Stippel, H., Verhas, P., Wimmer, K.: An Integrated Technology CAD Environment Vortrag: VLSI Technology, Systems and Applications Symposium (VLSITSA), Taipeh; 22.05.1991 - 24.05.1991; in: "Proceedings VLSI Technology, Systems and Applications Symposium", (1991), ISBN: 0-7803-0036-x; S. 147 - 151. | |
| 165. | Kosina, H., Selberherr, S.: Analysis of Filter Techniques for Monte-Carlo Device Simulation Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Zürich; 12.09.1991 - 14.09.1991; in: "Proceedings SISDEP 91", (1991), ISBN: 3-89191-476-8; S. 251 - 256. | |
| 164. | Verhas, P., Selberherr, S.: Automatic Device Characterization Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Zürich; 12.09.1991 - 14.09.1991; in: "Proceedings SISDEP 91", (1991), ISBN: 3-89191-476-8; S. 399 - 406. | |
| 163. | Halama, S., Hobler, G., Wimmer, K., Selberherr, S.: Eine neue Methode zur Simulation der Diffusion in allgemeinen Strukturen Vortrag: Seminar Grundlagen und Technologie elektronischer Bauelemente, Großarl; 20.03.1991 - 23.03.1991; in: "Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente", (1991), S. 20 - 26. | |
| 162. | Selberherr, S.: Low-Temperature Operation Vortrag: European School on Device Modelling, Bologna (eingeladen); 18.03.1991 - 20.03.1991; in: "Proceedings European School on Device Modelling", (1991), S. 71 - 100. | |
| 161. | Heinreichsberger, O., Selberherr, S., Stiftinger, M.: Massively Parallel Solution of the Three-Dimensional Van Roosbroeck Equations Vortrag: Numerical Simulation Conference, Berlin; 05.05.1991 - 08.05.1991; in: "Abstracts NUMSIM'91", (1991), ISSN: 0933-789x; S. 81 - 88. | |
| 160. | Kosina, H., Lindorfer, P., Selberherr, S.: Monte-Carlo-Poisson Coupling Using Transport Coefficients Vortrag: European Solid-State Device Research Conference (ESSDERC), Montreux; 16.09.1991 - 19.09.1991; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1991), ISBN: 0-444-89066-1; S. 53 - 56. https://doi.org/10.1016/0167-9317(91)90182-D | |
| 159. | Langer, E.: "Numerical Simulation of MOS Transistors"; Vortrag: IMA Workshop on Semiconductors, Minneapolis (eingeladen); 22.07.1991 - 02.08.1991; in: "Proceedings IMA Workshop on Semiconductors", (1991), S. 1 - 29. | |
| 158. | Wimmer, K., Bauer, R., Halama, S., Hobler, G., Selberherr, S.: Simulation nichtplanarer Herstellungsprozesse mit PROMIS Vortrag: Seminar Grundlagen und Technologie elektronischer Bauelemente, Großarl; 20.03.1991 - 23.03.1991; in: "Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente", (1991), S. 10 - 19. | |
| 157. | Lindorfer, P., Ashworth, J., Selberherr, S.: Simulation of GaAs Power and Low Noise Microwave Devices with MINIMOS Vortrag: European Microwave Conference, Stuttgart (eingeladen); 09.09.1991 - 13.09.1991; in: "Proceedings 21st European Microwave Conference", (1991), S. 173 - 179. | |
| 156. | Selberherr, S., Fischer, C., Halama, S., Pimingstorfer, H., Read, H., Stippel, H., Verhas, P., Wimmer, K.: The Viennese TCAD System Vortrag: VLSI Process and Device Modeling Workshop (VPAD), Oiso (eingeladen); 26.05.1991 - 27.05.1991; in: "Proceedings VPAD Workshop", (1991), S. 32 - 35. | |
| 155. | Traar, K., Stiftinger, M., Heinreichsberger, O., Selberherr, S.: Three-Dimensional Simulation of Semiconductor Devices on Supercomputers Vortrag: Conference on Supercomputing, Köln; 17.06.1991 - 21.06.1991; in: "Proceedings ACM Conf. on Supercomputing", (1991), ISBN: 0-89791-434-1; S. 154 - 162. https://doi.org/10.1145/109025.109069 | |
| 154. | Heinreichsberger, O., Selberherr, S.: Three-Dimensional Transient Device Simulation with MINIMOS Vortrag: Institute for Mathematics and Computer Science Conference (IMACS), Dublin (eingeladen); 22.07.1991 - 26.07.1991; in: "Proceedings IMACS 91 Conference", 4 (1991), S. 1692 - 1694. | |
| 153. | Wimmer, K., Bauer, R., Halama, S., Hobler, G., Selberherr, S.: Transformation Methods for Nonplanar Process Simulation Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Zürich; 12.09.1991 - 14.09.1991; in: "Proceedings SISDEP 91", (1991), ISBN: 3-89191-476-8; S. 131 - 138. | |
| 152. | Nanz, G., Bräunig, D., Dickinger, P., Selberherr, S.: 3D-Simulation of Single Event Upsets in a High Voltage Diode Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Ljubljana; 14.05.1990 - 16.05.1990; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1990), S. 143 - 146. | |
| 151. | Stiftinger, M., Heinreichsberger, O., Selberherr, S.: A Comparison of Various Accelerators for the Iterative Solution of Large Nonsymmetric Systems Vortrag: Conference on Scientific Computation, Wien; 14.06.1990 - 16.06.1990; in: "Abstracts Conference on Scientific Computation", (1990), S. 82 - 85. | |
| 150. | Selberherr, S., Heinreichsberger, O., Stiftinger, M., Traar, K.: About the Solution of the Three-Dimensional Semiconductor Device Equations on Vector-Concurrent Computers Vortrag: Symposium on Supercomputer Simulation of Semiconductor Devices, Minneapolis (eingeladen); 19.11.1990 - 20.11.1990; in: "Manuscripts Symposium on Supercomputer Simulation of Semiconductor Devices", (1990), ISSN: 0010-4655; S. 145 - 156. | |
| 149. | Ashworth, J., Lindorfer, P.: "Analysis of the Breakdown Phenomena in GaAs MESFET's"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Nottingham; 10.09.1990 - 13.09.1990; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1990), ISBN: 0-7503-0065-5; S. 241 - 244. | |
| 148. | Ashworth, J., Lindorfer, P.: "Analysis of the Breakdown Phenomena in GaAs MESFET's"; Vortrag: Gallium Arsenide and Related Compounds Conference, Jersey; 1990; in: "Proceedings GaAs and Related Compounds", (1990). | |
| 147. | Wimmer, K., Bauer, R., Selberherr, S.: Body-Fitting Coordinate Generation for Two-Dimensional Process-Simulation Vortrag: Conference on Signals and Systems, Chengdu; 08.10.1990 - 10.10.1990; in: "Abstracts AMSE Conf. Signals and Systems", 2 (1990), S. 239. | |
| 146. | Dickinger, P., Lindorfer, P., Nanz, G., Selberherr, S.: Connection of Network and Device Simulation Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Honolulu; 03.06.1990 - 04.06.1990; in: "NUPAD III Techn. Digest", (1990), S. 73 - 74. | |
| 145. | Selberherr, S.: Device Modeling and Physics Vortrag: General Conference of the Condensed Matter Division of the European Physical Society, Lissabon (eingeladen); 09.04.1990 - 12.04.1990; in: "Europhysics Conference Abstracts", (1990), S. L38. | |
| 144. | Kosina, H., Selberherr, S.: Efficient Coupling of Monte Carlo and Drift Diffusion Method with Applications to MOSFETs Vortrag: Solid State Devices and Materials Conference (SSDM), Sendai; 22.08.1990 - 24.08.1990; in: "Proceedings Solid State Devices and Materials Conference", (1990), ISBN: 4-930813-41-7; S. 139 - 142. | |
| 143. | Heinreichsberger, O., Selberherr, S., Stiftinger, M.: Fast Iterative Solution of Carrier Continuity Equations in 3D MOS/MESFET Simulations Vortrag: Copper Mountain Conference on Iterative Methods, Copper Mountain; 01.04.1990 - 05.04.1990; in: "Proceedings Copper Mountain Conference on Iterative Methods", Book 2 of 4 (1990), S. 1 - 7. | |
| 142. | Halama, S., Wimmer, K., Hobler, G., Selberherr, S.: Finite-Differenzen Dreiecksnetzgenerierung für die Prozess-Simulation mit PROMIS Vortrag: Workshop Numerische Simulation für Technologieentwicklung (NuTech), Garmisch-Partenkirchen; 20.09.1990 - 21.09.1990; in: "Proceedings NuTech", (1990), S. 3. | |
| 141. | Traar, K., Mader, W., Heinreichsberger, O., Selberherr, S., Stiftinger, M.: High Performance Preconditioning on Supercomputers for the 3D Device Simulator MINIMOS Vortrag: Supercomputing Conference, New York; 12.11.1990 - 16.11.1990; in: "Proceedings Supercomputing 90 Conf.", (1990), S. 224 - 231. | |
| 140. | Dickinger, P., Nanz, G., Selberherr, S.: Measurement and Simulation of Degradation Effects in High Voltage DMOS Devices Vortrag: European Solid-State Device Research Conference (ESSDERC), Nottingham; 10.09.1990 - 13.09.1990; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1990), ISBN: 0-7503-0065-5; S. 369 - 372. | |
| 139. | Habas, P., Selberherr, S.: Numerical Simulation of MOS-Devices with Non-Degenerate Gate Vortrag: European Solid-State Device Research Conference (ESSDERC), Nottingham; 10.09.1990 - 13.09.1990; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1990), ISBN: 0-7503-0065-5; S. 161 - 164. | |
| 138. | Heinreichsberger, O., Selberherr, S., Stiftinger, M., Traar, K.: On Preconditioning Non-Symmetric Matrix Iterations Vortrag: Conference on Scientific Computation, Wien; 14.06.1990 - 16.06.1990; in: "Abstracts Conference on Scientific Computation", (1990), S. 34 - 37. | |
| 137. | Wimmer, K., Bauer, R., Halama, S., Hobler, G., Selberherr, S.: Prozess-Simulation in nichtplanaren Strukturen mit PROMIS Vortrag: Workshop Numerische Simulation für Technologieentwicklung (NuTech), Garmisch-Partenkirchen; 20.09.1990 - 21.09.1990; in: "Proceedings NuTech", (1990), S. 4. | |
| 136. | Hobler, G., Halama, S., Wimmer, K., Selberherr, S., Pötzl, H.: RTA-Simulations with the 2-D Process Simulator PROMIS Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Honolulu; 03.06.1990 - 04.06.1990; in: "NUPAD III Techn. Digest", (1990), S. 13 - 14. | |
| 135. | Dickinger, P., Nanz, G., Selberherr, S.: Self-Consistent Simulation of Heat Generation and Conduction in Semiconductor Devices Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Ljubljana; 14.05.1990 - 16.05.1990; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1990), S. 157 - 160. | |
| 134. | Selberherr, S., Kosina, H.: Simulation of Nanometer MOS-Devices with MINIMOS Vortrag: VLSI Process and Device Modeling Workshop (VPAD), Kawasaki (eingeladen); 20.08.1990 - 21.08.1990; in: "Proceedings 1990 VLSI Process/Device Modeling Workshop", (1990), S. 2 - 5. | |
| 133. | Kosina, H., Wimmer, K., Fischer, C., Selberherr, S.: Simulation of ULSI Processes and Devices Vortrag: Computer Aided Innovation of New Materials, Tokyo (eingeladen); 28.08.1990 - 31.08.1990; in: "Abstracts Computer Aided Innovation of New Materials 90", (1990), S. 46. | |
| 132. | Kosina, H., Wimmer, K., Fischer, C., Selberherr, S.: Simulation of ULSI Processes and Devices Vortrag: Computer Aided Innovation of New Materials, Tokyo, Japan (eingeladen); 28.08.1990 - 31.08.1990; in: "Proceedings Computer Aided Innovation of New Materials 90", (1990), ISBN: 0-444-88864-0; S. 723 - 728. | |
| 131. | Kausel, W., Nylander, J.O., Nanz, G., Selberherr, S., Pötzl, H.: BAMBI - A Transient 2D-MESFET Model with General Boundary Conditions Including Schottky and Current Controlled Contacts Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Nis; 09.05.1989 - 11.05.1989; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", 1 (1989), ISBN: 0-948577-33-9; S. 421 - 429. | |
| 130. | Nanz, G., Dickinger, P., Fischer, C., Kausel, W., Selberherr, S.: Bauelementsimulation mit BAMBI Vortrag: Workshop Numerische Simulation für Technologieentwicklung (NuTech), Bad Tölz; 02.08.1989 - 03.08.1989; in: "Proceedings NuTech 89", (1989), S. 6. | |
| 129. | Selberherr, S.: Device and Process Modeling Vortrag: International Symposium on Signal, Systems, and Electronics (ISSSE), Erlangen (eingeladen); 18.09.1989 - 20.09.1989; in: "Proceedings ISSSE 89", (1989), S. 333 - 338. | |
| 128. | Lindorfer, P., Selberherr, S.: GaAs-MESFET Simulation with MINIMOS Vortrag: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), San Diego; 22.10.1989 - 25.10.1989; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (1989), S. 277 - 280. https://doi.org/10.1109/GAAS.1989.69342 | |
| 127. | Selberherr, S., Langer, E.: Low Temperature MOS Device Modeling Vortrag: Workshop on Low Temperature Semiconductor Electronics, Burlington; 07.08.1989 - 08.08.1989; in: "Proceedings Workshop On Low Temperature Semiconductor Electronics", (1989), S. 68 - 72. | |
| 126. | Lindorfer, P., Selberherr, S.: MESFET Analysis with MINIMOS Vortrag: European Solid-State Device Research Conference (ESSDERC), Berlin; 11.09.1989 - 14.09.1989; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1989), ISBN: 3-540-51000-1; S. 92 - 96. https://doi.org/10.1007/978-3-642-52314-4_18 | |
| 125. | Heinreichsberger, O., Habas, P., Lindorfer, P., Mayer, G., Selberherr, S., Stiftinger, M.: Neuere Entwicklungen bei MINIMOS Vortrag: Workshop Numerische Simulation für Technologieentwicklung (NuTech), Bad Tölz; 02.08.1989 - 03.08.1989; in: "Proceedings NuTech 89", (1989), S. 7. | |
| 124. | Selberherr, S., Langer, E.: Numerical Simulation of Semiconductor Devices Vortrag: European Simulation Multiconference (ESM), Rom (eingeladen); 07.06.1989 - 09.06.1989; in: "Proceedings European Simulation Multiconference ESM '89", (1989), S. 291 - 296. | |
| 123. | Dickinger, P., Nanz, G., Selberherr, S.: On-Resistance and Breakdown in Resurf Devices Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Nis; 09.05.1989 - 11.05.1989; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", 1 (1989), ISBN: 0-948577-33-9; S. 437 - 442. | |
| 122. | Selberherr, S.: Physical Models for Silicon VLSI Vortrag: Short Course on Semiconductor Device Modelling, Leeds (eingeladen); 03.04.1989 - 07.04.1989; in: "Proceedings Short Course on Semiconductor Device Modelling", (1989), S. 70 - 88. https://doi.org/10.1007/978-1-4471-1033-0_6 | |
| 121. | Selberherr, S.: The State of the Art in Device Simulation Vortrag: Congresso da Sociedade Brasileira de Microeletronica, Porto Alegre (eingeladen); 12.07.1989 - 14.07.1989; in: "Proceedings IV Congresso da SBMICRO", Vol.1 (1989), S. 151 - 166. | |
| 120. | Selberherr, S.: Three Dimensional Device Modeling with MINIMOS 5 Vortrag: VLSI Process and Device Modeling Workshop (VPAD), Osaka (eingeladen); 26.05.1989 - 27.05.1989; in: "Proceedings 1989 VLSI Process/Device Modeling Workshop", (1989), S. 40 - 41. | |
| 119. | Selberherr, S., Langer, E.: Three Dimensional Process and Device Modeling Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Nis (eingeladen); 09.05.1989 - 11.05.1989; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", 1 (1989), ISBN: 0-948577-33-9; S. 383 - 407. | |
| 118. | Dickinger, P., Nanz, G., Selberherr, S.: Two-Dimensional Simulation of a Bipolar Dynamic Memory Cell Vortrag: Conference on Modelling, Simulation and Control (MSC), Istanbul; 29.06.1989 - 01.07.1989; in: "Proceedings AMSE Conf. Modelling, Simulation and Control", 22 (1989), S. 33 - 38. | |
| 117. | Nanz, G.: "Zweidimensionale Simulation allgemeiner Halbleiterbauelemente "; Vortrag: 2nd Workshop Device Simulation, Gesellschaft für Mathematik und Datenverarbeitung, St. Augustin; 15.11.1989 - 16.11.1989; in: "Proceedings 2nd Workshop Device Simulation", (1989), S. #. | |
| 116. | Thurner, M., Selberherr, S.: 3D MOSFET Device Effects due to Field Oxide Vortrag: European Solid-State Device Research Conference (ESSDERC), Montpellier; 13.09.1988 - 16.09.1988; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1988), S. 245 - 248. https://doi.org/10.1051/jphyscol:1988450 | |
| 115. | Kausel, W., Nanz, G., Selberherr, S., Pötzl, H.: A New Boundary Condition for Device Simulation Considering Outer Components Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Bologna; 26.09.1988 - 28.09.1988; in: "Proceedings SISDEP 88", (1988), S. 625 - 636. | |
| 114. | Kovacs, G., Trattnig, G., Langer, E.: "Accurate Determination of Material Constants of Piezoelectric Crystals from SAW Velocity Measurements"; Vortrag: Ultrasonics Symposium, Chicago; 02.10.1988 - 05.10.1988; in: "Proceedings Ultrasonics Symposium", (1988), S. 269 - 272. | |
| 113. | Nanz, G., Kausel, W., Selberherr, S.: Automatic Grid Control in Device Simulation Vortrag: Numerical Grid Generation in Computational Fluid Dynamics Conference, Miami Beach; 05.12.1988 - 09.12.1988; in: "Proceedings Numerical Grid Generation in Computational Fluid Mechanics Conf.", (1988), ISBN: 0-906674-68-9; S. 1039 - 1047. | |
| 112. | Nanz, G., Dickinger, P., Kausel, W., Selberherr, S.: Avalanche Breakdown in the ALDMOST Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Bologna; 26.09.1988 - 28.09.1988; in: "Proceedings SISDEP 88", (1988), S. 175 - 181. | |
| 111. | Kausel, W., Nanz, G., Selberherr, S., Pötzl, H.: BAMBI - A Transient Two-Dimensional Device Simulator Using Implicit Backward Euler's Method and a Totally Self Adaptive Grid Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Santa Clara; 09.05.1988 - 10.05.1988; in: "Proceedings of the International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits", (1988). | |
| 110. | Selberherr, S.: MOS Device Modeling at Liquid-Nitrogen Temperature Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA (eingeladen); 11.12.1988 - 14.12.1988; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (1988), S. 496 - 499. https://doi.org/10.1109/IEDM.1988.32863 | |
| 109. | Hobler, G., Selberherr, S.: Monte Carlo Simulation of Ion Implantation into Two- and Three-Dimensional Structures Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Santa Clara; 09.05.1988 - 10.05.1988; in: "Proceedings of the International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits", (1988). | |
| 108. | Thurner, M., Lindorfer, P., Selberherr, S.: Numerical Treatment of Nonrectangular Field-Oxide for 3D MOSFET Simulation Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Bologna; 26.09.1988 - 28.09.1988; in: "Proceedings SISDEP 88", (1988), S. 375 - 381. | |
| 107. | Nanz, G., Dickinger, P., Kausel, W., Selberherr, S.: On-Resistance in the ALDMOST Vortrag: European Solid-State Device Research Conference (ESSDERC), Montpellier; 13.09.1988 - 16.09.1988; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1988), ISBN: 2-86883-100-1; S. 629 - 632. https://doi.org/10.1051/jphyscol:19884131 | |
| 106. | Selberherr, S.: Process Modeling Vortrag: Microcircuit Engineering Conference, Wien (eingeladen); 20.09.1988 - 22.09.1988; in: "Proceedings of the Microcircuit Engineering Conference", (1988), S. 605 - 610. https://doi.org/10.1016/0167-9317(89)90129-9 | |
| 105. | Selberherr, S.: Recent Advances in Numerical Device Simulation Vortrag: Microelectronic Seminar, Budapest (eingeladen); 10.10.1988 - 13.10.1988; in: "Abstracts Microelectronic Seminar 88", (1988), S. 1. | |
| 104. | Baghai-Wadji, A.R., Männer, O., Selberherr, S., Seifert, F.: Analysis and Measurement of Transducer End Radiation in SAW Filters on Strongly Coupling Substrates Vortrag: Forum Europeen Temps-Frequence, Besancon; 18.03.1987 - 20.03.1987; in: "Proceedings of the 1er Forum Europeen Temps-Frequence", (1987), S. 315 - 319. | |
| 103. | Thurner, M., Selberherr, S.: Comparison of Long- and Short-Channel MOSFETs Carried Out by 3D-MINIMOS Vortrag: European Solid-State Device Research Conference (ESSDERC), Bologna; 14.09.1987 - 17.09.1987; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1987), S. 409 - 412. | |
| 102. | Thurner, M., Selberherr, S.: Die Erweiterung von MINIMOS auf ein 3D Simulationsprogramm Vortrag: Informationstagung Mikroelektronik (ME), Wien; 14.10.1987 - 16.10.1987; in: "Bericht der Informationstagung Mikroelektronik", (1987), ISBN: 3-211-82023-x; S. 116 - 121. https://doi.org/10.1007/978-3-7091-8940-5_18 | |
| 101. | Hobler, G., Selberherr, S.: Efficient Two-Dimensional Monte-Carlo Simulation of Ion Implantation Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 17.06.1987 - 19.06.1987; in: "Proceedings Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1987), S. 225 - 230. | |
| 100. | Selberherr, S.: Low Temperature MOS Device Modeling Vortrag: Meeting of the Electrochemical Society, Low Temperature Electronics and High Temperature Superconductors, Honolulu (eingeladen); 18.10.1987 - 23.10.1987; in: "172nd ECS Meeting", 87-2 (1987), S. 464. | |
| 99. | Selberherr, S.: Low Temperature MOS Device Modeling Vortrag: Meeting of the Electrochemical Society (ECS), Honolulu (eingeladen); 18.10.1987 - 23.10.1987; in: "172nd ECS Meeting", 88-9 (1987), S. 70 - 86. | |
| 98. | Markowich, P., Schmeiser, Ch., Selberherr, S.: Numerical Methods in Semiconductor Device Simulation Vortrag: Numerical Methods and Approximation Theory, Nis; 18.08.1987 - 21.08.1987; in: "Numerical Methods and Approximation Theory", (1987), S. 287 - 299. | |
| 97. | Nanz, G., Dickinger, P., Kausel, W., Selberherr, S.: Punch-Through in Resurf Devices Vortrag: International Conference on Modelling and Simulation, Karlsruhe; 20.07.1987 - 22.07.1987; in: "Abstracts of the International Conference on Modelling and Simulation", 1 (1987), S. 142 - 143. | |
| 96. | Nanz, G., Dickinger, P., Kausel, W., Selberherr, S.: Punch-Through in Resurf Devices Vortrag: International Conference on Modelling and Simulation, Karlsruhe; 20.07.1987 - 22.07.1987; in: "Proceedings of the International Conference on Modelling and Simulation", 2A (1987), S. 63 - 70. | |
| 95. | Selberherr, S.: The Concept of BAMBI Vortrag: Symposium on BAMBI, Västeras (eingeladen); 03.09.1987 - 04.09.1987; in: "Abstracts of the 2nd Symposium on BAMBI", (1987). | |
| 94. | Thurner, M., Selberherr, S.: The Extension of MINIMOS to a Three Dimensional Simulation Program Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 17.06.1987 - 19.06.1987; in: "Proceedings Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1987), S. 327 - 332. | |
| 93. | Selberherr, S.: The Use and Construction of Numerical Simulation Packages Based on Physical Device Models for the Design and Analysis of Silicon VLSI Vortrag: Short Course on Semiconductor Device Modelling, Leeds (eingeladen); 30.03.1987 - 03.04.1987; in: "Proceedings Short Course on Semiconductor Device Modelling", (1987), S. 187 - 198. | |
| 92. | Kausel, W., Nanz, G., Selberherr, S., Pötzl, H.: Two-Dimensional Transient Simulation of the Turn-On Behavior of a planar MOS-Transistor Vortrag: International Conference on Modelling and Simulation, New Delhi; 29.10.1987 - 31.10.1987; in: "Abstracts of the International Conference on Modelling and Simulation", (1987), S. 50 - 51. | |
| 91. | Kausel, W., Nanz, G., Selberherr, S., Pötzl, H.: Two-Dimensional Transient Simulation of the Turn-on Behavior of a planar MOS-Transistor Vortrag: International Conference on Modelling and Simulation, New Delhi; 29.10.1987 - 31.10.1987; in: "Proceedings of the International Conference on Modelling and Simulation", A (1987), S. 13 - 24. | |
| 90. | Hobler, G., Selberherr, S.: Verification of Ion Implantation Models by Monte-Carlo Simulations Vortrag: European Solid-State Device Research Conference (ESSDERC), Bologna; 14.09.1987 - 17.09.1987; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1987), S. 445 - 448. | |
| 89. | Kausel, W., Nanz, G., Selberherr, S., Pötzl, H.: Zweidimensionale transiente Simulation des Einschaltverhaltens eines planaren MOS-Transistors Vortrag: Informationstagung Mikroelektronik (ME), Wien; 14.10.1987 - 16.10.1987; in: "Bericht der Informationstagung Mikroelektronik", (1987), ISBN: 3-211-82023-x; S. 100 - 105. https://doi.org/10.1007/978-3-7091-8940-5_15 | |
| 88. | Baghai-Wadji, A.R., Selberherr, S., Seifert, F.: A Green's Function Approach to the Electrostatic Problem of Single, Coupled and Comb-like Metallic Structures in Anisotropic Multilayered Media Vortrag: International Conference on Modelling and Simulation, Athen; 29.09.1986 - 01.10.1986; in: "Abstracts of the International Conference on Modelling and Simulation", 2 (1986), S. 39. | |
| 87. | Baghai-Wadji, A.R., Selberherr, S., Seifert, F.: A Green's Function Approach to the Electrostatic Problem of Single, Coupled and Comb-like Metallic Structures in Anisotropic Multilayered Media Vortrag: International Conference on Modelling and Simulation, Athen; 29.09.1986 - 01.10.1986; in: "Proceedings of the International Conference on Modelling and Simulation", 2.1 (1986), S. 109 - 120. | |
| 86. | Hänsch, W., Werner, C., Selberherr, S.: A Hot Carrier Analysis Utilizing MINIMOS 3.0 Vortrag: International Symposium on VLSI Technology, San Diego; 28.05.1986 - 30.05.1986; in: "Proceedings of the International Symposium on VLSI Technology", (1986), S. 63 - 64. | |
| 85. | Budil, M., Guerrero, E., Brabec, T., Selberherr, S., Pötzl, H.: A New Model for Determination of Point Defect Equilibrium Concentration in Silicon Vortrag: International Workshop on Numerical Modelling of Semiconductors (NUMOS), Los Angeles; 11.12.1986 - 12.12.1986; in: "Proceedings of the International Workshop on Numerical Modelling of Semiconductors", (1986), S. 37 - 44. | |
| 84. | Jüngling, W., Hobler, G., Selberherr, S., Pötzl, H.: Adaptive Grids in Space and Time for Process and Device Simulators Vortrag: Numerical Grid Generation in Computational Fluid Dynamics Conference, Landshut; 14.07.1986 - 17.07.1986; in: "Numerical Grid Generation in Computational Fluid Dynamics Conf.", (1986), ISBN: 0-906674-58-1; S. 729 - 739. | |
| 83. | Jüngling, W., Pichler, P., Selberherr, S., Pötzl, H.: Automation in Process- and Device-Simulators Vortrag: International Conference on Automation, Houston; 10.03.1986 - 12.03.1986; in: "Proceedings of the 1986 International Conference on Automation", (1986), S. 530 - 534. | |
| 82. | Selberherr, S.: BAMBI - The Desire for the Impossible ? Vortrag: Symposium on BAMBI, München (eingeladen); 25.02.1986; in: "Abstracts 1st Symposium on BAMBI", (1986). | |
| 81. | Straker, F., Selberherr, S.: Capacitance Computation for VLSI Structures Vortrag: International Conference on Trends in Communications (EUROCON), Paris; 21.04.1986 - 23.04.1986; in: "Proceedings of the International Conference on Trends in Communications", (1986), S. 602 - 608. | |
| 80. | Baghai-Wadji, A.R., Selberherr, S., Seifert, F.: Closed-Form Electrostatic Field Analysis of Metallic Comb-like Structures Containing Isolated and Interconnected Floating Strips of Arbitrary Topological Complexity. Part I: One-Dimensional Representation Vortrag: International Symposium on Numerical Field Calculation in Electrical Engineering (IGTE), Graz; 22.09.1986 - 23.09.1986; in: "Proceedings of the International Symposium on Numerical Field Calculation in Electrical Engineering", (1986), S. 138 - 145. | |
| 79. | Baghai-Wadji, A.R., Selberherr, S., Seifert, F.: Closed-Form Electrostatic Field Analysis of Metallic Comb-like Structures Containing Isolated and Interconnected Floating Strips of Arbitrary Topological Complexity. Part II: Two-Dimensional Representation Vortrag: International Symposium on Numerical Field Calculation in Electrical Engineering (IGTE), Graz; 22.09.1986 - 23.09.1986; in: "Proceedings of the International Symposium on Numerical Field Calculation in Electrical Engineering", (1986), S. 146 - 153. | |
| 78. | Baghai-Wadji, A.R., Selberherr, S., Seifert, F.: Closed-Form Formulae Electrostatic Field Analysis of Metallic Comb-like Structures Containing Isolated and Interconnected Floating Strips of Arbitrary Topological Complexity. Part I: One-Dimensional Representation Vortrag: International Symposium on Numerical Field Calculation in Electrical Engineering (IGTE), Graz; 22.09.1986 - 23.09.1986; in: "Abstracts of the International Symposium on Numerical Field Calculation in Electrical Engineering", (1986), S. 21 - 22. | |
| 77. | Baghai-Wadji, A.R., Selberherr, S., Seifert, F.: Closed-Form Formulae Electrostatic Field Analysis of Metallic Comb-like Structures Containing Isolated and Interconnected Floating Strips of Arbitrary Topological Complexity. Part II: Two-Dimensional Representation Vortrag: International Symposium on Numerical Field Calculation in Electrical Engineering (IGTE), Graz; 22.09.1986 - 23.09.1986; in: "Abstracts of the International Symposium on Numerical Field Calculation in Electrical Engineering", (1986), S. 23 - 24. | |
| 76. | Selberherr, S., Jüngling, W.: Device Simulation - Present Situation and Future Trends Vortrag: Device- und Prozesscharakterisierung für höchstkomplexe und ultraschnelle IC-Techniken, Würzburg (eingeladen); 05.05.1986 - 07.05.1986; in: "Abstracts Diskussionssitzung Device- und Prozesscharakterisierung für höchstkomplexe und ultraschnelle IC-Techniken", (1986), S. 7. | |
| 75. | Jüngling, W., Selberherr, S.: Modeling and Simulation of IC-Fabrication Steps Vortrag: Device- und Prozesscharakterisierung für höchstkomplexe und ultraschnelle IC-Techniken, Würzburg (eingeladen); 05.05.1986 - 07.05.1986; in: "Abstracts Diskussionssitzung Device- und Prozesscharakterisierung für höchstkomplexe und ultraschnelle IC-Techniken", (1986), S. 4. | |
| 74. | Budil, M., Jüngling, W., Guerrero, E., Selberherr, S., Pötzl, H.: Modeling of Point Defect Kinetics During Thermal Oxidation Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Swansea; 21.07.1986 - 23.07.1986; in: "Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes", (1986), ISBN: 0-906674-59-x; S. 384 - 397. | |
| 73. | Baghai-Wadji, A. R., Selberherr, S., Seifert, F.: Rigorous 3D Electrostatic Field Analysis of SAW Transducers with Closed-Form Formulae Vortrag: Ultrasonics Symposium, Williamsburg; 17.11.1986 - 19.11.1986; in: "Proceedings of the Ultrasonics Symposium", (1986), S. 23 - 28. | |
| 72. | Selberherr, S.: Silicon Device Simulation Vortrag: Austin Workshop on Process and Device Simulation, Austin, TX, USA (eingeladen); 17.03.1986 - 18.03.1986; in: "Proceedings of the Austin Workshop on Process and Device Simulation", (1986), S. 1. | |
| 71. | Selberherr, S.: State of the Art of Computer/Mathematical Simulation Tools Vortrag: Workshop on Modeling of Technology and Devices, Utrecht (eingeladen); 04.06.1986; in: "Abstracts of Modeling of Technology and Devices Workshop", (1986), S. 1. | |
| 70. | Selberherr, S.: The Status of MINIMOS Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Swansea (eingeladen); 21.07.1986 - 23.07.1986; in: "Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes", (1986), ISBN: 0-906674-59-x; S. 2 - 15. | |
| 69. | Hobler, G., Guerrero, E., Selberherr, S.: Two-Dimensional Modeling of Ion Implantation Induced Point Defects Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Santa Clara; 13.11.1986 - 14.11.1986; in: "Proceedings of the International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits", (1986), S. 10 - 11. | |
| 68. | Hobler, G., Langer, E., Selberherr, S.: Two-Dimensional Modeling of Ion-Implantation Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Swansea; 21.07.1986 - 23.07.1986; in: "Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes", (1986), ISBN: 0-906674-59-x; S. 256 - 270. | |
| 67. | Selberherr, S.: Bauelementsimulation Vortrag: Physik in der Mikroelektronik, Bad Honnef (eingeladen); 07.10.1985 - 11.10.1985; in: "Symposium über Physik in der Mikroelektronik", (1985), S. 1 - 2. | |
| 66. | Selberherr, S.: Numerical Modeling of MOS-Devices: Methods and Problems Vortrag: International Short Course on New Problems and New Solutions for Device and Process Modelling, Dublin (eingeladen); 17.06.1985 - 18.06.1985; in: "Proceedings of the International Short Course on New Problems and New Solutions for Device and Process Modelling", (1985), ISBN: 0-906783-45-3; S. 122 - 137. | |
| 65. | Schmeiser, Ch., Selberherr, S., Weiss, R.: On Scaling and Norms for Semiconductor Device Simulation Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 19.06.1985 - 21.06.1985; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1985), ISBN: 0-906783-43-7; S. 501 - 506. | |
| 64. | Pichler, P., Jüngling, W., Selberherr, S., Guerrero, E., Pötzl, H.: Process and Device Simulation with One and the Same Program Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 19.06.1985 - 21.06.1985; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1985), ISBN: 0-906783-43-7; S. 477 - 482. | |
| 63. | Jüngling, W., Pichler, P., Selberherr, S., Guerrero, E., Pötzl, H.: Spatial and Transient Grids for Process and Device Simulators Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 19.06.1985 - 21.06.1985; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1985), ISBN: 0-906783-43-7; S. 320 - 325. | |
| 62. | Markowich, P., Selberherr, S.: Steady State Semiconductor Device Modelling - A State of the Art Report Vortrag: International Conference on Advances in Circuit and Systems, Bejing; 10.06.1985 - 12.06.1985; in: "Proceedings of the International Conference on Advances in Circuit and Systems", (1985), ISBN: 9971-978-35-0; S. 444 - 447. | |
| 61. | Jüngling, W., Pichler, P., Selberherr, S., Pötzl, H.: ZOMBIE - A Coupled Process-Device Simulator Vortrag: International Conference on Modelling and Simulation, Monastir; 25.11.1985 - 28.11.1985; in: "Abstracts of the International Conference on Modelling and Simulation", 1 (1985), S. 137 - 138. | |
| 60. | Jüngling, W., Pichler, P., Selberherr, S., Pötzl, H.: ZOMBIE - A Coupled Process-Device Simulator Vortrag: International Conference on Modelling and Simulation, Monastir; 25.11.1985 - 28.11.1985; in: "Proceedings of the International Conference on Modelling and Simulation", 2A (1985), S. 137 - 146. | |
| 59. | Pichler, P., Jüngling, W., Selberherr, S., Guerrero, E., Pötzl, H.: Zweidimensionale Prozeßsimulation Vortrag: Informationstagung Mikroelektronik (ME), Wien; 15.10.1985 - 17.10.1985; in: "Bericht der Informationstagung Mikroelektronik", (1985), ISBN: 3-211-81893-6; S. 41 - 46. https://doi.org/10.1007/978-3-7091-8821-7_7 | |
| 58. | Franz, G., Franz, A., Selberherr, S.: 2-D Steady State and Transient Simulation of Power Thyristors Vortrag: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in: "Abstracts of the International Conference on Modelling and Simulation", 2 (1984), S. 28. | |
| 57. | Franz, G., Franz, A., Selberherr, S.: 2-D Steady State and Transient Simulation of Power Thyristors Vortrag: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in: "Proceedings of the International Conference on Modelling and Simulation", 2.1 (1984), S. 171 - 185. | |
| 56. | Markowich, P., Selberherr, S.: A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments Vortrag: SIAM Summer Meeting, Seattle; 16.07.1984 - 20.07.1984; in: "Abstracts of SIAM Summer Meeting", (1984), S. 67. | |
| 55. | Markowich, P., Selberherr, S.: A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments Vortrag: International Conference on Boundary and Interior Layers (BAIL), Dublin (eingeladen); 20.06.1984 - 22.06.1984; in: "Abstracts of the International Conference on Boundary and Interior Layers", (1984), S. 4. | |
| 54. | Franz, A., Franz, G., Selberherr, S.: BAMBI - a Design Model for Power MOSFETs Vortrag: International Conference on Computer-Aided Design (ICCAD), Santa Clara; 12.11.1984 - 15.11.1984; in: "Proceedings of the International Conference on Computer-Aided Design", (1984), ISBN: 0-8186-0607-x; S. 179 - 181. | |
| 53. | Straker, F., Selberherr, S.: Capacitance Computation for VLSI Structures Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Swansea; 09.07.1984 - 12.07.1984; in: "Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes", (1984), ISBN: 0-906674-38-7; S. 39 - 55. | |
| 52. | Jüngling, W., Pichler, P., Selberherr, S., Guerrero, E., Pötzl, H.: Comparison of Advanced Models for Coupled Diffusion Vortrag: International Conference on Computer-Aided Design (ICCAD), Santa Clara; 12.11.1984 - 15.11.1984; in: "Proceedings of the International Conference on Computer-Aided Design", (1984), ISBN: 0-8186-0607-x; S. 167 - 169. | |
| 51. | Straker, F., Selberherr, S.: Computation of VLSI Metalization Capacitance Vortrag: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in: "Abstracts of the International Conference on Modelling and Simulation", 2 (1984), S. 13 - 15. | |
| 50. | Straker, F., Selberherr, S.: Computation of VLSI Metalization Capacitance Vortrag: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in: "Proceedings of the International Conference on Modelling and Simulation", 2.1 (1984), S. 1 - 18. | |
| 49. | Straker, F., Selberherr, S.: Computation of Wire and Junction Capacitances in VLSI Structures Vortrag: International Conference on VLSI Multilevel Interconnection, New Orleans; 21.06.1984 - 22.06.1984; in: "Proceedings of VLSI Multilevel Interconnection Conference", IEEE Cat.No 84CH1999-2 (1984), S. 209 - 217. | |
| 48. | Demel, J., Selberherr, S.: JANAP - ein Programm zur Simulation des Zeitverhaltens von nichtlinearen elektrischen Schaltungen Vortrag: Arbeitsgemeinschaft Simulation (ASIM), Wien; 25.09.1984 - 27.09.1984; in: "Proceedings of the Conference Arbeitsgemeinschaft Simulation (ASIM)", (1984), ISBN: 978-3-540-13393-3; S. 149 - 153. https://doi.org/10.1007/978-3-642-69706-7_21 | |
| 47. | Franz, A., Franz, G., Selberherr, S.: Numerical 2-D Simulation of Vertical Power MOSFETs Vortrag: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in: "Abstracts of the International Conference on Modelling and Simulation", 2 (1984), S. 29. | |
| 46. | Franz, A., Franz, G., Selberherr, S.: Numerical 2-D Simulation of Vertical Power MOSFETs Vortrag: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in: "Proceedings of the International Conference on Modelling and Simulation", 2.1 (1984), S. 187 - 202. | |
| 45. | Selberherr, S., Pötzl, H.: Numerische Simulation von Halbleiterbauelementen Vortrag: Arbeitsgemeinschaft Simulation (ASIM), Wien; 25.09.1984 - 27.09.1984; in: "Proceedings of the Conference Arbeitsgemeinschaft Simulation (ASIM)", (1984), ISBN: 978-3-540-13393-3; S. 154 - 158. https://doi.org/10.1007/978-3-642-69706-7_22 | |
| 44. | Baghai-Wadji, A. R., Selberherr, S., Seifert, F.: On the Calculation of Charge, Electrostatic Potential and Capacitance in Generalized SAW Structures Vortrag: Ultrasonics Symposium, Dallas; 14.11.1984 - 16.11.1984; in: "Abstracts of the Ultrasonics Symposium", (1984), S. 44 - 48. | |
| 43. | Selberherr, S.: Process and Device Modeling for VLSI Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Nis (eingeladen); 07.05.1984 - 09.05.1984; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1984), S. 1 - 45. | |
| 42. | Jüngling, W., Pichler, P., Selberherr, S., Guerrero, E., Pötzl, H.: Simulation of Critical IC-Fabrication Steps Vortrag: International Conference on Numerical Simulation of VLSI Devices, Boston; 12.11.1984 - 14.11.1984; in: "Abstracts of the Numerical Simulation of VLSI Devices Conference", (1984), S. 7. | |
| 41. | Demel, J., Selberherr, S.: The Complete Tableau Approach to Simulate VLSI-Networks Vortrag: International Conference on Computer-Aided Design (ICCAD), Santa Clara; 12.11.1984 - 15.11.1984; in: "Proceedings of the International Conference on Computer-Aided Design", (1984), ISBN: 0-8186-0607-x; S. 27 - 29. | |
| 40. | Selberherr, S., Griebel, W., Pötzl, H.: Transport Physics for Modeling Semiconductor Devices Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Swansea (eingeladen); 09.07.1984 - 12.07.1984; in: "Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes", (1984), ISBN: 0-906674-38-7; S. 133 - 152. | |
| 39. | Pichler, P., Jüngling, W., Selberherr, S., Pötzl, H.: Two-Dimensional Coupled Diffusion Modeling Vortrag: European Solid-State Device Research Conference (ESSDERC), Lille; 10.09.1984 - 13.09.1984; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1984), ISBN: 0-444-86942-5; S. 187 - 191. | |
| 38. | Pichler, P., Jüngling, W., Selberherr, S., Pötzl, H.: Two-Dimensional Coupled Diffusion Modeling Vortrag: European Solid-State Device Research Conference (ESSDERC), Lille; 10.09.1984 - 13.09.1984; in: "Abstracts of the European Solid-State Device Research Conference (ESSDERC)", (1984), S. 182 - 185. | |
| 37. | Franz, G., Franz, A., Selberherr, S., Markowich, P.: A Quasi Three Dimensional Semiconductor Device Simulation Using Cylindrical Coordinates Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Galway; 15.06.1983 - 17.06.1983; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1983), ISBN: 0-906783-20-8; S. 122 - 127. | |
| 36. | Agler, W., Markowich, P., Selberherr, S.: A Singular Perturbation Analysis of Discretisation Methods for the Parabolic Semiconductor Device Equations Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Galway; 15.06.1983 - 17.06.1983; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1983), ISBN: 0-906783-20-8; S. 85 - 90. | |
| 35. | Markowich, P., Selberherr, S.: A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments Vortrag: Segundas Jornadas LatinoAmericanas de Matematica Aplicada, Rio de Janeiro; 12.12.1983 - 16.12.1983; in: "Abstracts Segundas Jornadas LatinoAmericanas de Matematica Aplicada", (1983). | |
| 34. | Langer, E., Selberherr, S., Markowich, P., Ringhofer, Ch.: Ausbreitung elektroakustischer Wellen in Piezoelektrika Vortrag: Informationstagung Mikroelektronik (ME), Wien; 12.10.1983 - 14.10.1983; in: "Bericht der Informationstagung Mikroelektronik", (1983), S. 144 - 148. | |
| 33. | Straker, F., Selberherr, S.: Computation of Integrated Circuit Interconnect Capacitances Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Zagreb; 26.04.1983 - 28.04.1983; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1983), S. 31 - 39. | |
| 32. | Selberherr, S., Ringhofer, Ch.: Discretization Methods for the Semiconductor Equations Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Galway (eingeladen); 15.06.1983 - 17.06.1983; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1983), ISBN: 0-906783-20-8; S. 31 - 45. | |
| 31. | Straker, S., Selberherr, S.: Kapazitätsberechnung bei VLSI-Strukturen Vortrag: Informationstagung Mikroelektronik (ME), Wien; 12.10.1983 - 14.10.1983; in: "Bericht der Informationstagung Mikroelektronik", (1983), S. 77 - 83. | |
| 30. | Selberherr, S.: Modeling Static and Dynamic Behavior of Power Devices Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA (eingeladen); 05.12.1983 - 07.12.1983; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", IEEE Cat.No 83CH1973-7 (1983), S. 71 - 74. https://doi.org/10.1109/IEDM.1983.190443 | |
| 29. | Langer, E., Selberherr, S., Markowich, P., Ringhofer, Ch.: Numerical Analysis of Acoustic Wave Generation in Anisotropic Piezoelectric Materials Vortrag: International Conference on Solid State Transducers, Delft; 31.05.1983 - 03.06.1983; in: "Abstracts of Solid State Transducers Conference 1983", (1983), S. 138 - 139. | |
| 28. | Franz, A., Franz, G., Selberherr, S., Pötzl, H.: Numerische Simulation von GaAs-Bauelementen Vortrag: Grundlagen und Technologie elektronischer Bauelemente, Grossarl; 23.03.1983 - 26.03.1983; in: "Tagungsbericht Grundlagen und Technologie elektronischer Bauelemente", (1983), S. 50 - 54. | |
| 27. | Jüngling, W., Guerrero, E., Selberherr, S.: On Modeling the Intrinsic Number and Fermi Levels for Device and Process Simulation Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Galway; 15.06.1983 - 17.06.1983; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1983), ISBN: 0-906783-20-8; S. 144 - 149. | |
| 26. | Langer, E., Selberherr, S., Markowich, P.: Surface and Bulk Wave Velocities in Arbitrary Anisotropic Piezoelectric Materials Vortrag: Ultrasonics Symposium, Atlanta; 31.10.1983 - 02.11.1983; in: "Proceedings of the Ultrasonics Symposium", (1983), S. 1157 - 1160. | |
| 25. | Franz, A., Franz, G., Selberherr, S., Markowich, P.: The Influence of Various Mobility Models on the Iteration Process and Solution of the Basic Semiconductor Equations Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Galway; 15.06.1983 - 17.06.1983; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1983), ISBN: 0-906783-20-8; S. 117 - 121. | |
| 24. | Selberherr, S., Schütz, A., Pötzl, H.: Two Dimensional MOS-Transistor Modeling Vortrag: VLSI Process and Device Modeling Summer Course, Heverlee (eingeladen); 07.06.1983 - 10.06.1983; in: "Proceedings of VLSI Process and Device Modeling Summer Course 1983", (1983), S. 1 - 38. | |
| 23. | Machek, J., Selberherr, S.: A Novel Finite-Element Approach to Device Modeling Vortrag: International Conference on Numerical Simulation of VLSI Devices, Boston; 02.11.1982 - 04.11.1982; in: "Abstracts of Numerical Simulation of VLSI Devices Conference", (1982), S. 9. | |
| 22. | Ringhofer, Ch., Markowich, P., Selberherr, S., Lentini, M.: A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Equations Vortrag: International Conference on Numerical Simulation of VLSI Devices, Boston; 02.11.1982 - 04.11.1982; in: "Abstracts of Numerical Simulation of VLSI Devices Conference", (1982), S. 6. | |
| 21. | Selberherr, S., Schütz, A., Pötzl, H.: Design of Integrated Circuits: Device Modeling Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Banja Luka (eingeladen); 14.04.1982 - 16.04.1982; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1982), S. 47 - 84. | |
| 20. | Franz, A., Franz, G., Selberherr, S., Ringhofer, Ch., Markowich, P.: Finite Boxes - A Generalization of the Finite Difference Method Utmost Suitable for Semiconductor Device Simulation Vortrag: International Conference on Numerical Simulation of VLSI Devices, Boston; 02.11.1982 - 04.11.1982; in: "Abstracts of Numerical Simulation of VLSI Devices Conference", (1982), S. 3. | |
| 19. | Langer, E., Selberherr, S., Ringhofer, Ch., Markowich, P.: Numerical Analysis of Acoustic Wave Generation in Anisotropic Piezoelectric Materials Vortrag: Ultrasonics Symposium, San Diego; 27.10.1982 - 29.10.1982; in: "Proceedings of the Ultrasonics Symposium", (1982), S. 350 - 353. | |
| 18. | Selberherr, S.: Some Comments on X3J3/S6.81 Chapter 3 Vortrag: Meeting of the Fortran Experts Group, Wien; 14.06.1982 - 17.06.1982; in: "Minutes of the Fortran Experts Group", X3J3/148 (1982), S. 109 - 110. | |
| 17. | Selberherr, S., Schütz, A., Pötzl, H.: Two Dimensional MOS-Transistor Modeling Vortrag: International Conference on Computer-Aided Design of IC Fabrication Processes, Stanford (eingeladen); 18.08.1982 - 19.08.1982; in: "Proceedings of Computer-Aided Design of IC Fabrication Processes Conference", (1982), S. 1 - 20. | |
| 16. | Selberherr, S., Schütz, A., Pötzl, H.: Two Dimensional MOS-Transistor Modeling Vortrag: NATO-ASI-Workshop: Process and Device Simulation for MOS -VLSI Circuits, Urbino (eingeladen); 12.07.1982 - 23.07.1982; in: "Proceedings of Process and Device Simulation for MOS-VLSI Circuits", (1982), S. 1 - 93. | |
| 15. | Langer, E., Selberherr, S., Mader, H.: A Consistent Analysis of Bulk-Barrier Diodes Vortrag: European Solid-State Device Research Conference (ESSDERC), Toulouse; 14.09.1981 - 17.09.1981; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1981), S. 141 - 142. | |
| 14. | Langer, E., Selberherr, S., Mader, H.: A Numerical Analysis of Bulk-Barrier Diodes Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 15.06.1981 - 19.06.1981; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1981), ISBN: 0-906783-03-8; S. 218 - 222. | |
| 13. | Schütz, A., Selberherr, S., Pötzl, H.: Numerical Analysis of Breakdown Phenomena in MOSFETs Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 15.06.1981 - 19.06.1981; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1981), ISBN: 0-906783-03-8; S. 270 - 274. | |
| 12. | Langer, E., Selberherr, S., Mader, H.: Numerische Analyse der Bulk-Barrier Diode Vortrag: Informationstagung Mikroelektronik (ME), Wien; 14.10.1981 - 16.10.1981; in: "Bericht der Informationstagung Mikroelektronik (ME)", (1981), S. 63 - 67. | |
| 11. | Langer, E., Selberherr, S., Mader, H.: Numerische Analyse der Bulk-Barrier Diode Vortrag: Seminar Grundlagen und Technologie elektronischer Bauelemente, Grossarl; 01.04.1981 - 04.04.1981; in: "Kursunterlagen Grundlagen und Technologie elektronischer Bauelemente", (1981), S. 87 - 93. | |
| 10. | Schütz, A., Selberherr, S., Pötzl, H.: Zweidimensionale Simulation des Lawinendurchbruchs in MOS Transistoren Vortrag: Informationstagung Mikroelektronik (ME), Wien; 14.10.1981 - 16.10.1981; in: "Bericht der Informationstagung Mikroelektronik (ME)", (1981), S. 68 - 72. | |
| 9. | Selberherr, S., Schütz, A., Pötzl, H.: MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren Vortrag: Fortbildungsseminar Praxis der Großintegration, Dortmund (eingeladen); 27.05.1980 - 31.05.1980; in: "Kursunterlagen Praxis der Großintegration", VA8 (1980), S. 1 - 44. | |
| 8. | Pötzl, H., Selberherr, S., Schütz, A.: MOS-Großintegration Vortrag: Winterschule Neuere Entwicklungen auf dem Gebiete der Halbleiterphysik, Mariapfarr; 25.02.1980 - 01.03.1980; in: "Kursunterlagen Neuere Entwicklungen auf dem Gebiete der Halbleiterphysik", (1980), S. 5 - 6. | |
| 7. | Selberherr, S., Schütz, A., Pötzl, H.: The Sensitivity of Short Channel MOSFETs on Technological Tolerances Vortrag: European Solid-State Device Research Conference (ESSDERC), York; 15.09.1980 - 18.09.1980; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1980), S. 116 - 118. | |
| 6. | Schütz, A., Selberherr, S., Pötzl, H.: Two Dimensional Analysis of the Avalanche Effect in MOS Transistors Vortrag: European Solid-State Device Research Conference (ESSDERC), York; 15.09.1980 - 18.09.1980; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1980), S. 113 - 115. | |
| 5. | Fichtner, W., Losehand, R., Guerrero, E., Selberherr, S., Schultz, H.: Exact First Principles Modelling of Short-Channel VMOS Transistors Vortrag: International Conference on Computer Aided Design and Manufacture of Electronic Components, Circuits and Systems (CADMECCS), Brighton; 03.07.1979 - 06.07.1979; in: "Proc.Intl.Conf.on Computer Aided Design and Manufacture of Electronic Components,Circuits and Systems", (1979), S. 28 - 30. | |
| 4. | Selberherr, S., Fichtner, W., Pötzl, H.: MINIMOS - a Program Package to Facilitate MOS Device Design and Analysis Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 27.06.1979 - 29.06.1979; in: "Abstr.Conf.on Numerical Analysis of Semiconductor Devices", (1979), S. 29. | |
| 3. | Selberherr, S., Fichtner, W., Pötzl, H.: MINIMOS - a Program Package to Facilitate MOS Device Design and Analysis Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 27.06.1979 - 29.06.1979; in: "Proceedings Conf.on Numerical Analysis of Semiconductor Devices", (1979), ISBN: 0-906783-00-3; S. 275 - 279. | |
| 2. | Selberherr, S., Pötzl, H.: Two Dimensional MOS-Transistor Modelling Vortrag: European Solid-State Device Research Conference (ESSDERC), München; 10.09.1979 - 14.09.1979; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1979), S. 133. | |
| 1. | Selberherr, S., Pötzl, H.: Zweidimensionale Modellierung von MOS-Transistoren Vortrag: Informationstagung Mikroelektronik (ME), Wien; 10.10.1979 - 13.10.1979; in: "Bericht der Informationstagung Mikroelektronik (ME)", (1979), S. 52 - 57. | |